Preparation method of integrated semiconductor nanowire photoelectric device

Abstract

The invention discloses a preparation method of an integrated semiconductor nanowire photoelectric device, and belongs to the technical field of photoelectrons. According to the invention, a manipulator (tungsten needle) of a focused ion beam-scanning electron beam (FIB-SEM) double-beam electron microscope is utilized to extract different material types of semiconductor nanowires dispersed on a pyramid silicon wafer, the semiconductor nanowires are respectively transferred to the same interdigital electrode, and the nanowires are fixed through an FIB deposition conductive material, so that the photoelectric detector integrated with various semiconductor nanowires is formed. The detection wave band of the device is widened, and meanwhile the advantages of the nanowires can be kept. Therefore, due to the use of the pyramid silicon wafer dispersed substrate and the FIB-SEM double-beam electron microscope, a brand new solution is provided for the preparation of the nanowire wide-spectrum high-performance photoelectric detector integrated with different materials.

Description

Technical Field

[0001] The invention belongs to the field of optoelectronic technology, and in particular relates to a method for preparing an integrated semiconductor nanowire optoelectronic device. Background Art

[0002] Photodetectors are devices that convert detected light signals into electrical signals to detect photons. They have been widely used in daily life, industry, agriculture, military and other fields, and semiconductor materials are the core of photodetectors. In the past few decades, silicon photonics has made great progress and broken through many key technologies and barriers.

[0003] Silicon photodetectors are mainly used for the detection of ultraviolet to near-infrared (INR) light. Due to the relatively large band gap of silicon (Eg = 1.12 eV), its absorption cutoff wavelength is 1.1 μm, which hinders the detection of longer wavelength light by silicon photodetectors. Compared with silicon, germanium has a smaller indirect band gap (0.66 eV) and direct band gap (0.8 eV), higher electron mobility and hole mobility, and its absorption cutoff wavelength is 1.8 μm. In the development of wide-spectrum detectors, materials with different response bands are grown on the same substrate by epitaxial superposition, which has problems such as lattice mismatch, thermal mismatch, and component segregation, limiting the development of wide-spectrum high-performance detectors.

[0004] With the development of nanotechnology, many nanostructures such as nanowires, nanotubes, nanosheets, quantum dots, and quantum wells have achieved excellent performance in the field of photodetectors. Among them, the one-dimensional single nanowire structure has higher light sensitivity than the bulk material due to the quantum size effect, large specific surface volume and smaller size. Therefore, the dual semiconductor nanowire optoelectronic device combining silicon and germanium can achieve wide spectrum detection. However, due to process limitations, current nanowire photodetectors are based on single or nanowire array structures. Although the single nanowire photodetector prepared based on traditional photolithography has a fast response speed and high sensitivity, it is impossible to achieve the integration of semiconductor nanowires of different materials, the detection band is limited, and the process is complex.

[0005] Therefore, the present invention explores a method for preparing an integrated multi-semiconductor nanowire optoelectronic device with a relatively simple process, a wide detection band, and high sensitivity. Summary of the invention

[0006] In view of the above-mentioned shortcomings of the prior art, the present invention provides a method for preparing an integrated semiconductor nanowire optoelectronic device.

[0007] To achieve the above object, the technical solution adopted by the present invention is:

[0008] A method for preparing an integrated semiconductor nanowire optoelectronic device comprises the following steps:

[0009] (1) Using chemical vapor deposition technology of FIB-SEM dual-beam electron microscope, one end of the semiconductor nanowires dispersed on the pyramid silicon wafer is welded to the tungsten needle, and then the semiconductor nanowires are extracted and transferred to the interdigital electrodes;

[0010] (2) welding the other end of the semiconductor nanowire to the interdigital electrode by chemical vapor deposition technology;

[0011] (3) using a gallium ion beam to cut off the connection between the tungsten needle and one end of the semiconductor nanowire, depositing a conductive material at the cut portion of the semiconductor nanowire, welding the semiconductor nanowire to the interdigital electrode, and completing the transfer and fixation of the semiconductor nanowire;

[0012] (4) Using the tungsten needle of a FIB-SEM dual-beam electron microscope, repeat steps (1) to (3) to transfer and fix other semiconductor nanowires on the same interdigital electrode.

[0013] The semiconductor nanowires are ZnO nanowires, Ga 2 O 3 Nanowires, SnO 2 Nanowires, WO 3 Nanowires, TiO 2 Nanowires, Si nanowires, Ge nanowires, InP nanowires, MoS 2 nanowire, CdS nanowire, GaAs nanowire, GeSn nanowire, GaSb nanowire, InSb nanowire, InAs nanowire or InGaAs nanowire.

[0014] The other semiconductor nanowires are ZnO, Ga 2 O 3 SnO 2 , WO 3 、TiO 2 、Si、Ge、InP、MoS 2 , CdS, GaAs, GeSn, GaSb, InSb, InAs or InGaAs except the semiconductor nanowire of step (1).

[0015] As a preferred embodiment of the present invention, in step (4), steps (1) to (3) are repeated more than once; the semiconductor nanowires integrated on the integrated semiconductor nanowire optoelectronic device are ZnO, Ga 2 O 3 SnO 2 , WO 3 、TiO 2 、Si、Ge、InP、MoS 2, two or more of CdS, GaAs, GeSn, GaSb, InSb, InAs, and InGaAs.

[0016] As a preferred embodiment of the present invention, in step (3), the conductive material is carbon, platinum or tungsten.

[0017] As a preferred embodiment of the present invention, the diameter of the semiconductor nanowire is (50-200) nm and the length is (2-20) μm.

[0018] As a preferred embodiment of the present invention, the method for preparing the pyramid silicon wafer dispersed with semiconductor nanowires comprises the following steps:

[0019] S1: Clean the silicon substrate, and then etch it in the second etching solution to obtain a pyramid silicon wafer;

[0020] S2: The semiconductor nanowires are dispersed in ethanol to obtain a semiconductor nanowire dispersion liquid, and then the semiconductor nanowire dispersion liquid is dropped on a pyramid silicon wafer, and after drying, a pyramid silicon wafer with dispersed semiconductor nanowires is obtained.

[0021] The pyramid silicon wafer with dispersed semiconductor nanowires prepared by the present invention is more conducive to the extraction of nanowires by the tungsten needle of the FIB-SEM double-beam electron microscope, and can also increase the success rate of the extraction.

[0022] As a preferred embodiment of the present invention, the second etching solution is a mixed aqueous solution of KOH and isopropanol, wherein the weight percentage of KOH is 5-15wt% and the volume percentage of isopropanol is 2-8%vol; the silicon substrate can be etched in the second etching solution defined above to obtain a pyramid silicon wafer.

[0023] More preferably, the second etching solution is a mixed aqueous solution of KOH and isopropanol, wherein the weight percentage of KOH is 10 wt % and the volume percentage of isopropanol is 5 vol %.

[0024] As a preferred embodiment of the present invention, in step S2, the silicon substrate is cleaned and placed in a second etching solution for etching for 10-30 minutes, then immersed in concentrated nitric acid for ultrasonic treatment, then rinsed, and then immersed in a 10% vol HF solution, and finally rinsed and dried to obtain a pyramid silicon wafer.

[0025] As a preferred embodiment of the present invention, the method for preparing the integrated semiconductor nanowire optoelectronic device comprises the following steps:

[0026] (1) Using the tungsten needle of the FIB-SEM double-beam electron microscope, one end of the semiconductor A nanowire dispersed on the pyramid silicon wafer is welded, and then the semiconductor A nanowire is extracted and transferred to the interdigital electrode;

[0027] (2) welding the other end of the semiconductor A nanowire to the interdigital electrode by depositing platinum through a platinum gas needle;

[0028] (3) using a gallium ion beam to cut off the connection between the tungsten needle and one end of the semiconductor A nanowire, depositing platinum at the cut portion of the semiconductor A nanowire, welding the semiconductor A nanowire to the interdigital electrode, and completing the transfer and fixation of the semiconductor A nanowire;

[0029] (4) Using the tungsten needle of the FIB-SEM dual-beam electron microscope, one end of the semiconductor B nanowire on the pyramid silicon wafer dispersed with the semiconductor B nanowire is welded, and then the semiconductor B nanowire is extracted and transferred to the interdigital electrode fixed with the semiconductor A nanowire;

[0030] (5) welding one end of the semiconductor B nanowire to the interdigital electrode by depositing platinum through a platinum gas needle;

[0031] (6) A gallium ion beam is used to cut off the connection between the tungsten needle and the semiconductor B nanowire, and platinum is deposited at the cut portion of the semiconductor B nanowire. The semiconductor B nanowire is welded to the interdigital electrode to complete the transfer and fixation of the semiconductor B nanowire, thereby obtaining an integrated dual semiconductor nanowire optoelectronic device.

[0032] As a preferred embodiment of the present invention, the semiconductor A nanowire and the semiconductor B nanowire are selected from ZnO nanowire, Ga 2 O 3 Nanowires, SnO 2 Nanowires, WO 3 Nanowires, TiO 2 Nanowires, Si nanowires, Ge nanowires, InP nanowires, MoS 2 Nanowire, CdS nanowire, GaAs nanowire, GeSn nanowire, GaSb nanowire, InSb nanowire, InAs nanowire or InGaAs nanowire, semiconductor A nanowire and semiconductor B nanowire are different.

[0033] ZnO nanowires, Ga 2 O 3 Nanowires, SnO 2 Nanowires, WO 3 Nanowires, TiO 2 Nanowires, InP nanowires, MoS 2 Nanowires, CdS nanowires, GaAs nanowires, GeSn nanowires, GaSb nanowires, InSb nanowires, InAs nanowires or InGaAs nanowires can be prepared by conventional methods in the art.

[0034] As a preferred embodiment of the present invention, the method for preparing the silicon nanowire dispersion comprises the following steps:

[0035] S1: Clean the silicon substrate and then place it in a deposition solution for deposition to obtain a silicon wafer covered with silver particles;

[0036] S2: placing the silicon wafer covered with silver particles into a first etching solution for etching to obtain a silicon nanowire array;

[0037] S3: sonicating the silicon nanowire array in ethanol to obtain a silicon nanowire dispersion.

[0038] As a preferred embodiment of the present invention, the deposition liquid is AgNO 3 and HF mixed aqueous solution, where AgNO 3 The molar concentration of is 0.01M, and the molar concentration of HF is 4.6M.

[0039] As a preferred embodiment of the present invention, the first etching solution is H 2 O 2 and HF mixed aqueous solution, where H 2 O 2 The molar concentration of is 0.3M, and the molar concentration of HF is 4.6M; the second etching solution is a mixed aqueous solution of KOH and isopropanol, wherein the weight percentage of KOH is 10wt%, and the volume percentage of isopropanol is 5%vol.

[0040] As a preferred embodiment of the present invention, the method for preparing the germanium nanowire dispersion comprises the following steps:

[0041] Step (1): cleaning the silicon substrate, and then magnetron sputtering and depositing gold particles to obtain a silicon wafer covered with gold particles;

[0042] Step (2): placing the silicon wafer covered with gold particles into a tube furnace, using germanium powder as an evaporation source and gold particles as a catalyst, and growing germanium nanowires by thermal evaporation on the silicon wafer in an argon atmosphere.

[0043] Step (3): ultrasonically treat the silicon wafer on which the germanium nanowires are grown in ethanol to obtain a germanium nanowire dispersion.

[0044] The present invention adopts a thermal evaporation method to prepare germanium nanowires, and then disperses them on a pyramid silicon wafer, which is more conducive to the extraction of germanium nanowires by a tungsten needle of a FIB-SEM double-beam electron microscope and can also increase the success rate of the extraction.

[0045] As a preferred embodiment of the present invention, the initial vacuum degree of the magnetron sputtering is 4 Pa, the sputtering power is 10 W, and the sputtering time is 60 s.

[0046] As a preferred embodiment of the present invention, the temperature of the thermal evaporation is 1000° C., the holding time is 90 min, and high-purity argon is used as the carrier gas.

[0047] As a preferred embodiment of the present invention, the germanium nanowire dispersion is relatively sparse and needs to be dried and titrated repeatedly for 5 times.

[0048] Compared with the prior art, the beneficial effects of the present invention are as follows: the present invention utilizes the needle of the FIB-SEM dual-beam electron microscope to extract semiconductor nanowires of different materials dispersed on the pyramid silicon wafer, transfers them to the interdigital electrodes with a spacing of 5 μm, and fixes the semiconductor nanowires by platinum deposition of the FIB to form a dual-nanowire photodetector integrating multiple nanowires, broadens the detection band, and at the same time maintains the high sensitivity of the nanowire structure photodetector. In addition, the use of the pyramid silicon wafer dispersed substrate and the FIB-SEM dual-beam electron microscope provides a new solution for the preparation of a wide-spectrum photodetector integrating nanowires of different materials. BRIEF DESCRIPTION OF THE DRAWINGS

[0049] Figure 1 Schematic diagram of the structure of integrated semiconductor nanowire optoelectronic devices.

[0050] Figure 2 This is a scanning electron microscope image of the pyramid silicon wafer prepared in Example 1.

[0051] Figure 3 This is a cross-sectional scanning electron microscope image of the silicon nanowire array prepared in Example 1.

[0052] Figure 4 This is a scanning electron microscope image of the germanium nanowires prepared in Example 1.

[0053] Figure 5 This is a scanning electron microscope image of the gold tower silicon wafer dispersed with silicon nanowires prepared in Example 1.

[0054] Figure 6 This is a scanning electron microscope image of the gold tower silicon wafer dispersed with germanium nanowires prepared in Example 1.

[0055] Figure 7 This is a scanning electron microscope image of silicon nanowires extracted by the tungsten needle of the FIB-SEM dual-beam electron microscope in Example 1.

[0056] Figure 8 This is a scanning electron microscope image of the silicon nanowires transferred to the top of the interdigital electrodes extracted by the tungsten needle of the FIB-SEM dual-beam electron microscope in Example 1.

[0057] Fig. 9 This is a scanning electron microscope image of the integrated semiconductor nanowire photodetector device prepared in Example 1.

[0058] In the figure, 1-silicon substrate, 2-silicon dioxide layer, 3-gold interdigitated electrodes, 4-single silicon nanowire, 5-single germanium nanowire, 6-metal platinum. DETAILED DESCRIPTION

[0059] In order to better illustrate the purpose, technical solutions and advantages of the present invention, the present invention will be further described below in conjunction with specific embodiments.

[0060] Example 1

[0061] A method for preparing a pyramid silicon wafer with dispersed silicon nanowires comprises the following steps:

[0062] S1: Clean a single-side polished n-type silicon substrate with a size of 1 cm×1 cm×0.65 cm using the RCA standard cleaning process, and blow dry with nitrogen gas for later use.

[0063] S2: Prepare a 10 wt% KOH etching solution, the solvent is deionized water, and add 5% vol isopropanol, and ultrasonicate for 15 minutes.

[0064] S3: The cleaned n-type silicon wafer is placed in a KOH etching solution for 20 minutes, then immersed in concentrated nitric acid for 15 minutes, then rinsed with deionized water, and then immersed in a 10% vol HF solution for 3 minutes. Finally, it is rinsed with deionized water and dried with nitrogen to obtain a pyramid silicon wafer. Figure 2 shown.

[0065] S4: Prepare standard deposition solution: AgNO 3 and HF mixed aqueous solution, where AgNO 3 The molar concentration of is 0.01M, the molar concentration of HF is 4.6M; the standard etching solution is prepared: H 2 O 2 and HF mixed aqueous solution, where H 2 O 2 The molar concentration of is 0.3 M, and the molar concentration of HF is 4.6 M; both the standard deposition solution and the standard etching solution are magnetically stirred at room temperature for 2 h to ensure the uniformity of the solution.

[0066] S5: Place the cleaned n-type silicon substrate with the polished surface facing upwards in a standard deposition solution and deposit it for 1 minute, then take it out to obtain a silicon wafer covered with silver particles.

[0067] S6: Place the silicon wafer covered with silver particles in a standard etching solution and etch it at room temperature for 1 hour, take it out and rinse it with deionized water, and soak it in a 30% nitric acid solution for 1 hour to remove the residual silver. Then soak it in 10% vol HF for 3 minutes, and rinse it with deionized water to remove the surface oxide layer, so as to obtain a silicon wafer etched with a silicon nanowire array, such as Figure 3 shown.

[0068] S7: Place the silicon wafer etched with the silicon nanowire array into a glass test tube, add ethanol to cover the silicon wafer, and perform ultrasound for 5 minutes to obtain a silicon nanowire dispersion.

[0069] S8: Use a disposable dropper to take 1 mL of silicon nanowire dispersion and drop it on the prepared pyramid silicon wafer. After drying, silicon nanowires (such as Figure 5 and stored in a vacuum environment to prevent the nanowires from being oxidized.

[0070] A method for preparing a pyramid silicon wafer with dispersed germanium nanowires comprises the following steps:

[0071] Step (1): Place the cleaned n-type single-sided polished silicon substrate into a magnetron sputtering apparatus for gold spraying, set the initial vacuum degree to 4 Pa, the sputtering power to 10 W, and the sputtering time to 60 s, and obtain an n-type silicon substrate covered with gold particles after sputtering.

[0072] Step (2): Place the n-type silicon substrate covered with gold particles near the furnace mouth of the tube furnace, place the germanium powder in the high temperature zone in the center of the tube furnace, set the temperature to 1000°C, keep the temperature for 90 minutes, keep the pressure at normal pressure, use the germanium powder as the evaporation source and the gold particles as the catalyst, and thermally evaporate and grow germanium nanowires (such as Figure 4 shown).

[0073] Step (3): Place the silicon wafer with germanium nanowires grown thereon into a glass test tube, add ethanol to cover the silicon wafer, and perform ultrasonic treatment for 5 minutes to obtain a germanium nanowire dispersion.

[0074] Step (4): Use a dropper to take 1 mL of the germanium nanowire dispersion and drop it on the prepared pyramid silicon wafer. Repeat the titration and drying for five times to obtain germanium nanowires dispersed on the pyramid silicon wafer (such as Figure 6 and stored in a vacuum environment to prevent the nanowires from being oxidized.

[0075] A method for preparing an integrated dual semiconductor nanowire optoelectronic device comprises the following steps:

[0076] (1) Assemble a pyramid silicon wafer with 5 μm gold interdigital electrodes and dispersed silicon nanowires or germanium nanowires on the workbench of a FIB-SEM double-beam electron microscope and evacuate the vacuum. First, find a suitable silicon nanowire on the pyramid silicon wafer dispersed with silicon nanowires under the electron beam window, and keep the silicon nanowire in a horizontal state by rotating the workbench.

[0077] (2) Through confocusing in the electron beam window (electron beam window voltage 5 kV, current 86 pA, ion beam window voltage 30 kV), the same silicon nanowire is found in the electron beam window and the ion beam window, and the workbench is turned to 0°, and the beam current of the ion beam window is adjusted to 18 pA to prevent the silicon nanowire from being damaged by the gallium ion beam; a tungsten needle is inserted, and the electron beam window and the ion beam window are observed at the same time, and the tungsten needle is moved to contact the silicon nanowire.

[0078] (4) Select a rectangular deposition frame in the ion beam window and adjust it to a suitable size (adjust according to the actual situation), and place it in the contact area between the silicon nanowire and the tungsten needle; use an ion beam to deposit metal platinum, with an ion beam current of 18pA and a thickness of 500nm; after deposition, slowly lift the tungsten needle and transfer the silicon nanowire to the tungsten needle (such as Figure 7 As shown), the extraction of silicon nanowires is completed.

[0079] (5) Find the gold interdigital electrodes on the silicon backside in the electron beam window, keep the interdigital electrodes in a vertical position by rotating the workbench, and select any edge position at the four corners of the interdigital electrodes for subsequent nanowire transfer.

[0080] (6) Use confocal microscopy to find the position for transferring the nanowires in advance in the ion beam window and the electron beam window. Turn the workbench to 0°, insert the tungsten needle with the silicon nanowire, observe it through the electron beam window first, and move the two ends of the silicon nanowire to the two sides of the electrode (such as Figure 8 Then, under the ion beam window, the end of the silicon nanowire that is not in contact with the tungsten needle is slowly moved to the contact electrode.

[0081] (7) Select a rectangular deposition frame in the electron beam window, adjust it to 1 μm × 1 μm, set the thickness to 500 nm, and place it at the junction of the silicon nanowire and the gold electrode. Change the electron beam current to 0.69 nA, and use electron beam deposition of platinum to weld the end of the silicon nanowire in contact with the electrode together.

[0082] (8) Select a rectangular etching frame in the ion beam window and adjust it to a suitable size. Place it at the junction of the silicon nanowire and the tungsten needle. Adjust the ion beam current to 18 pA. The etching depth is slightly larger than the diameter of the nanowire. Cut off the end of the silicon nanowire connected to the tungsten needle with a gallium ion beam. Deposit platinum in the electron beam window to connect the cut end of the silicon nanowire to the gold electrode. The size of the deposited platinum is also 1 μm × 1 μm × 0.5 μm. This completes the transfer and fixation of the silicon nanowire.

[0083] (9) Under the electron beam window, find a suitable germanium nanowire on the pyramid silicon wafer with dispersed germanium nanowires, and keep the germanium nanowire in a horizontal state by rotating the workbench.

[0084] (10) By confocusing the electron beam window, the same germanium nanowire is found in the electron beam window and the ion beam window, and the workbench is turned to 0°. The beam current of the ion beam window is adjusted to 18 pA to prevent the germanium nanowire from being destroyed by gallium ions. A tungsten needle is inserted, and the electron beam window and the ion beam window are observed at the same time, and the tungsten needle is moved to contact the silicon nanowire.

[0085] (11) Select a rectangular deposition frame under the ion beam window, adjust the rectangular frame to a suitable size according to the size of the nanowire, and place it in the contact area between the germanium nanowire and the tungsten needle; use an ion beam to deposit metal platinum with a deposition beam current of 18pA and a thickness of 500nm; after deposition, slowly lift the tungsten needle to transfer the germanium nanowire to the tungsten needle, and complete the extraction of the germanium nanowire.

[0086] (12) The electron beam window finds the successfully transferred silicon nanowire on the interdigital electrode, adjusts the interdigital electrode to a vertical state, and selects a position near the electrode directly above (or directly below) the electrode connected to the silicon nanowire for the subsequent transfer of the germanium nanowire.

[0087] (13) The position where the germanium nanowire is to be transferred is found by confocal scanning in the ion beam window and the electron beam window at the same time. The workbench is turned to 0°, and a tungsten needle with the germanium nanowire attached is inserted. The electron beam window and the ion beam window are observed at the same time, and the end of the germanium nanowire that is not in contact with the tungsten needle is slowly moved to the contact electrode.

[0088] (14) Select a rectangular deposition frame in the electron beam window, adjust it to 1 μm × 1 μm, set the thickness to 500 nm, and place it at the connection between the germanium nanowire and the gold electrode. Use electron beam deposition of platinum to weld the end of the germanium nanowire that contacts the gold electrode together.

[0089] (15) Select a rectangular etching frame in the ion beam window and adjust it to a suitable size. Place it at the junction of the germanium nanowire and the tungsten needle. Adjust the ion beam current to 18 pA. The etching depth is slightly larger than the diameter of the nanowire. Cut off the end of the germanium nanowire connected to the tungsten needle with a gallium ion beam. Deposit platinum of the same size in the electron beam window. Connect the cut end of the germanium nanowire to the gold electrode to complete the transfer and fixation of the germanium nanowire.

[0090] (16) After the silicon nanowires and the germanium nanowires are transferred and welded to the electrodes (e.g. Fig. 9 As shown), the preparation of the device is completed; the silicon nanowire and the germanium nanowire need to be on the same electrode and be close to each other to ensure that the laser can irradiate the two nanowires at the same time during subsequent photoelectric testing.

[0091] The detection band of silicon is 0.4-1.1μm, and a single silicon nanowire photodetector is mainly used to detect visible light and part of infrared light, while the detection band of germanium is 0.7-1.8μm, and a single germanium nanowire photodetector can detect near-infrared light with a wavelength greater than 1.1μm. This embodiment integrates silicon nanowires and germanium nanowires into one detector, which can expand the detection band of the photodetector (visible light to near-infrared light), and the sensitivity of the integrated photodetector of silicon and germanium in the form of nanowires to visible light to near-infrared light is not significantly reduced compared to a single nanometer photoelectric wire detector.

[0092] Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention rather than to limit the scope of protection of the present invention. Although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solution of the present invention can be modified or replaced by equivalents without departing from the essence and scope of the technical solution of the present invention.

Claims

1. A method for preparing an integrated semiconductor nanowire optoelectronic device, characterized in that: The steps include: (1) Using chemical vapor deposition technology of FIB-SEM dual-beam electron microscope, one end of the semiconductor nanowire on the pyramid silicon wafer with dispersed semiconductor nanowires is welded to a tungsten needle, and then the semiconductor nanowire is extracted; (2) welding the other end of the semiconductor nanowire to the interdigital electrode by chemical vapor deposition technology; (3) using a gallium ion beam to cut off the connection between the tungsten needle and one end of the semiconductor nanowire, depositing a conductive material at the cut portion of the semiconductor nanowire, welding the semiconductor nanowire to the interdigital electrode, and completing the transfer and fixation of the semiconductor nanowire; (4) Using the tungsten needle of a FIB-SEM dual-beam electron microscope, repeat steps (1) to (3) to transfer and fix other semiconductor nanowires on the same interdigital electrode to obtain an integrated semiconductor nanowire optoelectronic device.

2. The method for preparing an integrated semiconductor nanowire optoelectronic device according to claim 1, characterized in that: The semiconductor nanowire is ZnO nanowire, Ga2O3 nanowire, SnO2 nanowire, WO3 nanowire, TiO2 nanowire, Si nanowire, Ge nanowire, InP nanowire, MoS2 nanowire, CdS nanowire, GaAs nanowire, GeSn nanowire, GaSb nanowire, InSb nanowire, InAs nanowire or InGaAs nanowire.

3. The method for preparing an integrated semiconductor nanowire optoelectronic device according to claim 2, characterized in that: The method for preparing the pyramid silicon wafer with dispersed semiconductor nanowires comprises the following steps: S1: Clean the silicon substrate, and then etch it in the second etching solution to obtain a pyramid silicon wafer; S2: The semiconductor nanowires are dispersed in ethanol to obtain a semiconductor nanowire dispersion liquid, and then the semiconductor nanowire dispersion liquid is dropped on a pyramid silicon wafer, and after drying, a pyramid silicon wafer with dispersed semiconductor nanowires is obtained.

4. The method for preparing an integrated semiconductor nanowire optoelectronic device according to claim 3, characterized in that: The second etching solution is a mixed aqueous solution of KOH and isopropanol, wherein the weight percentage of KOH is 5-15wt% and the volume percentage of isopropanol is 2-8%vol.

5. The method for preparing an integrated semiconductor nanowire optoelectronic device according to claim 3, characterized in that: In the step S1, the silicon substrate is cleaned and placed in a second etching solution for etching for 10-30 minutes, then immersed in concentrated nitric acid for ultrasonic treatment, then rinsed, and then immersed in a 10% vol HF solution, and finally rinsed and dried to obtain a pyramid silicon wafer.

6. The method for preparing an integrated semiconductor nanowire optoelectronic device according to claim 1, characterized in that: In the step (3), the conductive material is carbon, platinum or tungsten.

7. The method for preparing an integrated semiconductor nanowire optoelectronic device according to claim 1, characterized in that: The semiconductor nanowires integrated in the integrated semiconductor nanowire optoelectronic device are two or more of ZnO, Ga2O3, SnO2, WO3, TiO2, Si, Ge, InP, MoS2, CdS, GaAs, GeSn, GaSb, InSb, InAs, and InGaAs.

8. The method for preparing an integrated semiconductor nanowire optoelectronic device according to claim 7, characterized in that: The semiconductor nanowire has a diameter of (50-200) nm and a length of (2-20) μm.

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