Display panel and display panel forming method

Abstract

The invention provides a display panel and a forming method of the display panel, the display panel comprises a substrate, one side of the substrate comprises a plurality of sub-pixel areas, each sub-pixel area comprises a micro-lens layer which is located on one side of the substrate and comprises a plurality of micro-lenses; the light-emitting device is located on the side, away from the substrate, of the micro-lens layer, the light-emitting device comprises an electrode layer and a light-emitting layer in the thickness direction of the substrate, and the electrode layer comprises an anode and a cathode which are located on the two opposite sides of the light-emitting layer; in at least one sub-pixel region, the light-emitting device comprises a first region part and a second region part, a light-emitting layer in the first region part is driven by current between the anode and the cathode to emit light, and an electrode layer in the second region part is at least partially lost. And the orthographic projection of the second region part on the substrate is located in the opening region of the sub-pixel region.

Description

Technical Field

[0001] The present disclosure relates to the field of display technology, and in particular to a display panel and a method for forming the display panel. Background Art

[0002] Organic light emitting diodes (OLEDs) are increasingly being used in high-performance display panels. OLED display panels mainly include a display driving circuit and a pixel array. The display driving circuit is used to drive the pixel array to emit light, thereby realizing picture display. The pixel array may include multiple light emitting devices, and the multiple light emitting devices may include an anode, a cathode, and a light emitting layer located between the anode and the cathode.

[0003] In order to improve the light output efficiency of the OLED display panel, a microlens array MLA is generally added to the OLED display panel, which will form a concave-convex morphology, thereby increasing the light output by utilizing the concave-convex morphology. Summary of the invention

[0004] Based on the background technology, the present disclosure proposes a display panel and a method for forming the display panel.

[0005] In a first aspect of the present disclosure, a display panel is provided, comprising:

[0006] A substrate, wherein one side of the substrate includes a plurality of sub-pixel regions, wherein the sub-pixel regions include:

[0007] A microlens layer, located on one side of the substrate, comprising a plurality of microlenses;

[0008] A light emitting device is located on a side of the microlens layer away from the substrate, and in the thickness direction of the substrate, the light emitting device comprises an electrode layer and a light emitting layer, wherein the electrode layer comprises an anode and a cathode located on opposite sides of the light emitting layer;

[0009] In at least one of the sub-pixel areas, the light-emitting device includes a first area portion and a second area portion, the light-emitting layer in the first area portion emits light when driven by a current between the anode and the cathode, the electrode layer in the second area portion is at least partially missing, and the orthographic projection of the second area portion on the substrate is located within the opening area of ​​the sub-pixel area.

[0010] Exemplarily, the first region is at least partially located on a side wall of the microlens;

[0011] The orthographic projection of the second region on the substrate is located within the orthographic projection of a single microlens on the substrate and / or within a gap between orthographic projections of two adjacent microlenses on the substrate.

[0012] Exemplarily, the orthographic projection of the second region on the substrate is located within the orthographic projection of the top surface of a single microlens facing away from the substrate on the substrate.

[0013] Exemplarily, the sub-pixel further includes:

[0014] A thin film transistor is located on one side of the substrate, and the microlens layer is located on a side of the thin film transistor away from the substrate;

[0015] The anode includes a conductive region located in the first region and an insulating region located in the second region, the conductive region includes a conductive material, the conductive material is missing in the insulating region, and the conductive region is connected to the thin film transistor.

[0016] Exemplarily, the light emitting layer in the second section is in direct contact with the microlens layer.

[0017] Exemplarily, the orthographic projection of the second region on the substrate is located within the orthographic projection of the top surface of a single microlens facing away from the substrate on the substrate, and the vertical distances from different positions of the top surface of the microlens facing away from the substrate to the substrate are the same or different.

[0018] Exemplarily, the display panel further includes:

[0019] an auxiliary electrode layer, located on a side of the microlens layer close to the substrate;

[0020] Wherein, the auxiliary electrode layer is connected to the conductive area and the thin film transistor.

[0021] Exemplarily, the orthographic projection of the first region on the substrate may include a region of a microlens sidewall and a gap region between microlenses, and the microlens layer further includes:

[0022] at least one via hole, the orthographic projection of the via hole on the substrate being located within a gap between the orthographic projections of the microlenses on the substrate;

[0023] Wherein, the auxiliary electrode layer is connected to the conductive area through the via hole.

[0024] Exemplarily, a dimension of the via hole in the thickness direction of the substrate is smaller than a thickness of a region of the microlens layer excluding the via hole.

[0025] Exemplarily, a portion of the orthographic projection of the anode on the substrate located within the opening region is in a grid-like pattern.

[0026] Exemplarily, the display panel further includes:

[0027] A photoresist layer is located on a side of the thin film transistor close to the substrate; the orthographic projection of the photoresist layer on the substrate covers the orthographic projection of the light emitting device on the substrate;

[0028] Wherein, the auxiliary electrode layer is electrically connected to the photoresist layer.

[0029] Exemplarily, the thickness of the light-emitting layer located in the first region is smaller than the thickness of the light-emitting layer located in the second region.

[0030] Exemplarily, the first area includes a first sub-area and a second sub-area, the orthographic projection of the first sub-area on the substrate is located within the orthographic projection of the microlens on the substrate, and the orthographic projection of the second sub-area on the substrate is located between the orthographic projections of two adjacent microlenses on the substrate;

[0031] The thickness of the light emitting layer in the first sub-region is smaller than the thickness of the light emitting layer in the second sub-region.

[0032] In a second aspect, a method for forming a display panel is further provided, the method being used to form the display panel described in any one of the first aspects, the forming method comprising:

[0033] forming a microlens layer on one side of the substrate, the microlens layer comprising a plurality of microlenses;

[0034] forming a light-emitting device on a side of the microlens layer away from the substrate, the light-emitting device comprising an electrode layer and a light-emitting layer, the electrode layer comprising an anode and a cathode located at opposite sides of the light-emitting layer;

[0035] The light-emitting device comprises a first area and a second area, the light-emitting layer in the first area emits light when driven by a current between the anode and the cathode, and the electrode layer in the second area is at least partially missing.

[0036] Exemplarily, a light emitting device is formed on a side of the microlens layer facing away from the substrate, comprising:

[0037] forming an anode on a side of the microlens layer facing away from the substrate;

[0038] Removing the conductive material in a target area of ​​the anode, wherein the target area is a partial area of ​​the anode, and the orthographic projection of the target area on the substrate is located within the orthographic projection of a single microlens on the substrate and / or between the orthographic projections of two adjacent microlenses on the substrate;

[0039] forming a light-emitting layer on a side of the anode facing away from the substrate;

[0040] forming a cathode on a side of the light-emitting layer away from the substrate to obtain the light-emitting device;

[0041] The portion of the light emitting device located in the target area is the second region, and the portion of the anode located in an area other than the target area is the first region.

[0042] Exemplarily, before forming the microlens layer, the method further includes:

[0043] forming an auxiliary electrode layer on one side of the substrate;

[0044] Forming the microlens layer includes:

[0045] The microlens layer is formed on a side of the auxiliary electrode layer facing away from the substrate.

[0046] On one hand, the present disclosure provides a display panel, which may include a substrate, one side of the substrate includes a plurality of sub-pixel areas, wherein the sub-pixel area includes a microlens layer and a light-emitting device located on a side of the microlens layer away from the substrate, the microlens layer includes a plurality of microlenses, and in the thickness direction of the substrate, the light-emitting device includes an electrode layer and a light-emitting layer, the electrode layer includes an anode and a cathode located on opposite sides of the light-emitting layer; in the display panel, in at least one sub-pixel area, the light-emitting device includes a first area portion and a second area portion, the light-emitting layer in the first area portion emits light under the current driven between the anode and the cathode, and the electrode layer in the second area portion is at least partially missing; wherein the first area portion is at least located on the side wall of the microlens, and the orthographic projection of the second area portion on the substrate is located within the orthographic projection of a single microlens on the substrate, and / or is located in the gap between the orthographic projections of two adjacent microlenses on the substrate.

[0047] With the display panel of the present embodiment, since only the current path between the anode and the cathode in the first zone portion of the light-emitting device can be normally conducted to make the light-emitting layer in the first zone portion emit light, the electrode layer in the second zone portion is at least partially missing, so that the current path between the anode and the cathode is cut off. In this way, the second zone portion cannot emit light. When driving, the driving current of the second zone portion is also saved. Compared with the starting voltage required when all the light-emitting layers of the light-emitting devices of the display panel are emitting light, the starting voltage required to drive only a part of the light-emitting layer in the light-emitting device to emit light is significantly reduced. Therefore, the power consumption of the display panel can be reduced.

[0048] The above description is only an overview of the technical solution of the present disclosure. In order to more clearly understand the technical means of the present disclosure, it can be implemented according to the contents of the specification. In order to make the above and other purposes, features and advantages of the present disclosure more obvious and easy to understand, the specific implementation methods of the present disclosure are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0049] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure or related technologies, the following is a brief introduction to the drawings required for use in the embodiments or related technical descriptions. Obviously, the drawings described below are some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work. It should be noted that the proportions in the drawings are only for illustration and do not represent the actual proportions.

[0050] Figure 1 A schematic diagram showing the light output loss of a display panel in the related art is shown;

[0051] Figure 2 A schematic plan view of an OLED display panel according to an embodiment of the present disclosure is shown;

[0052] Figure 3 A cross-sectional schematic diagram of a display panel according to an embodiment of the present disclosure is shown;

[0053] Figure 4A Shows Figure 3 A schematic cross-sectional structure diagram of a light emitting device in a display panel shown;

[0054] Figure 4B and Figure 4C They are shown respectively Figure 3 A schematic plan view of two anodes of the light emitting device shown;

[0055] Figure 5 , Figure 7 , Fig. 9 and Fig.10 Schematic cross-sectional views of a sub-pixel region of several display panels are shown respectively;

[0056] Figure 6 Shows Figure 5 A cross-sectional schematic diagram of a light emitting device in a display panel shown;

[0057] Figure 8 Shows Figure 7 A cross-sectional schematic diagram of a light emitting device in a display panel shown;

[0058] Figure 11-Figure 14 Schematic diagrams of enlarged local areas of several light-emitting devices are shown respectively;

[0059] Figure 15-18 The formation Fig.10 A schematic diagram of the process of displaying the panel is shown. DETAILED DESCRIPTION

[0060] In order to make the above-mentioned purposes, features and advantages of the present disclosure more obvious and understandable, the technical solutions in the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings in the embodiments of the present disclosure. Obviously, the described embodiment is only one embodiment of the present disclosure, not all embodiments. Based on the embodiments in the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.

[0061] In this specification, "electrically connected" and "coupled" include the situation where the components are connected together through an element having some electrical function. There is no particular limitation on the "element having some electrical function" as long as it can transmit and receive electrical signals between the connected components. Examples of "element having some electrical function" include not only electrodes and wiring, but also switching elements such as transistors, resistors, inductors, capacitors, and other elements having various functions.

[0062] In this specification, "parallel" means a state where the angle formed by two straight lines is greater than -10° and less than 10°, and therefore, also includes a state where the angle is greater than -5° and less than 5°. In addition, "perpendicular" means a state where the angle formed by two straight lines is greater than 80° and less than 100°, and therefore, also includes a state where the angle is greater than 85° and less than 95°.

[0063] Unless the context requires otherwise, throughout the specification and claims, the term "comprising" is to be construed in an open, inclusive sense, ie, meaning "including, but not limited to."

[0064] The "same layer" in the embodiments of the present application refers to the relationship between multiple film layers formed by the same material after the same step (e.g., a one-step patterning process). The "same layer" here does not always mean that the thickness of multiple film layers is the same or the height of multiple film layers in the cross-sectional view is the same. The polygons in this specification are not strictly defined, and can be approximate triangles, parallelograms, trapezoids, pentagons or hexagons, etc., and there may be some small deformations caused by tolerances.

[0065] In the embodiment of the present application, since the source and drain of the transistor are symmetrical, the source and drain can be interchanged. In the embodiment of the present application, one of the source and drain of the transistor can also be called the first electrode, and the other of the source and drain can be called the second electrode.

[0066] Organic Light-Emitting Diode (OLED), also known as Organic Electroluminescence Display (OELD), organic light-emitting semiconductor, has the advantages of self-luminescence, wide viewing angle, high contrast, low power consumption, thin thickness, high response rate, can be used for flexible panels, wide operating temperature range, full color, simple structure and process, etc.

[0067] However, the light extraction efficiency of conventional OLED devices is about 20%. Figure 1 As shown, Figure 1 FIG. 1 is a schematic diagram showing the light output loss of an OLED display panel. Figure 1 As shown, the main modes of light loss in OLED devices are divided into three types: metal surface plasma mode 17, waveguide mode 16 and substrate mode 15.

[0068] In the waveguide mode 16, the light emitted by the OLED device is confined in the organic material film 12, the ITO film 11 and the glass substrate 10 in the form of a waveguide 16;

[0069] In the substrate mode 15, light will be totally reflected at the interface between the ITO film 11 and the glass substrate 10 and at the interface between the glass substrate 10 and the air;

[0070] In the metal surface plasmon mode 17, the light emitted by the OLED device is transmitted in the organic material film 13;

[0071] Therefore, the light emitted to the external space in front of the OLED device accounts for about 20% of the total amount of the organic film 12; thus, it is necessary to reduce the total reflection effect in the OLED device.

[0072] In the related technology, in order to reduce the total reflection effect in OLED devices, MLA technology is used, combined with Figure 1 As shown, a microlens array is made on the side of the ITO film 11 close to the substrate, and then a concave-convex structure is formed on the lens array on the subsequent ITO film 11, organic material film 12, and ITO film 12. The concave-convex structure changes the light output direction of the device and destroys the total reflection condition of the device, thereby achieving the effect of increasing the light output of the device.

[0073] However, the concave-convex structure brought about by the MLA technology will lead to the problem of increased driving power consumption of the display panel. This is because the thickness of the organic material film 12 on the concave-convex structure is not uniform. For example, the thickness of the organic material film 12 is larger in the raised part and the recessed part, which increases the voltage driving this part of the organic material film 12 to emit light, thereby causing the problem of high power consumption.

[0074] In view of this, the inventor proposes an OLED display panel adapted to the concave-convex structure morphology, please refer to Figure 3 As shown, Figure 3 A cross-sectional schematic diagram of an OLED display panel according to an embodiment of the present disclosure is shown. Figure 3 As shown, in each light-emitting device of the OLED display panel, part of the area of ​​the light-emitting device can be made to emit light, while part of the area can not emit light. For the partial area that emits light, all the structures required for the light-emitting device to emit light can be retained, and in the partial area that does not emit light, the electrode layer of the light-emitting device is at least partially missing, wherein the partial area that emits light is called the first area of ​​the light-emitting device, and the partial area that does not emit light is called the second area of ​​the light-emitting device.

[0075] Among them, the electrode layer in the second zone portion is at least partially missing, so that normal current flow cannot be generated between the anode and the cathode, thereby failing to stimulate the light-emitting layer in the second zone portion to emit light, and since the electrode layer is missing in this second zone portion, the current driving the light-emitting layer to emit light will not flow through this second zone portion, thereby reducing the overall power consumption.

[0076] The disclosed display panel is exemplarily described below with reference to the accompanying drawings.

[0077] In one embodiment, a display panel is provided. Figure 2 , Figure 3 , Figure 4A and Figure 4B As shown, Figure 2 A schematic plan view of an OLED display panel according to an embodiment of the present disclosure is shown. Figure 3 A cross-sectional schematic diagram of a display panel according to an embodiment of the present disclosure is shown. Figure 4A Shows Figure 3 The cross-sectional structure diagram of the light emitting device 80 in the display panel shown in FIG. Figure 4B Shows Figure 3 The schematic plan view of the anode 81 of the light emitting device 80 is shown in FIG. Figure 2-4B As shown, the display panel may include:

[0078] A substrate 10, one side of the substrate 10 includes a plurality of sub-pixel regions, wherein the sub-pixel regions include:

[0079] The microlens layer 70 is located on one side of the substrate 10 and includes a plurality of microlenses 70A;

[0080] The light emitting device 80 is located on the side of the microlens layer 70 away from the substrate 10. In the thickness direction of the substrate 10, the light emitting device 80 includes an electrode layer and a light emitting layer 82. The electrode layer includes an anode 81 and a cathode 83 located on opposite sides of the light emitting layer 82.

[0081] In at least one sub-pixel area, the light-emitting device 80 includes a first area portion 80a and a second area portion 80b, the light-emitting layer 82 in the first area portion 80a emits light under the current driving between the anode 81 and the cathode 83, the electrode layer in the second area portion 80b is at least partially missing, and the positive projection of the second area portion 80b on the substrate 10 is located in the opening area 91 of the sub-pixel area.

[0082] In this embodiment, the display panel may be an OLED display panel. Specifically, it may be a top-emitting display panel or a bottom-emitting display panel. Top emission means that the light emitted by the light-emitting device 80 of the OLED display panel is emitted from the side away from the substrate 10, for example, toward Figure 3 The upper part of the emission.

[0083] The substrate 10 may be a glass substrate 10 or a transparent substrate 10 made of other materials.

[0084] One side of the substrate 10 includes a display area AA and a non-display area NAA. The display area AA includes a plurality of sub-pixels, and the sub-pixels are located in a sub-pixel area PA. The sub-pixel area PA may refer to an area where a gate line GL and a gate line DL on a display panel intersect, for example, Figure 2 The display panel includes a plurality of gate lines DL and a plurality of gate lines GL, wherein the plurality of gate lines DL and the plurality of gate lines GL intersect to define a sub-pixel area PA where a plurality of sub-pixels are located, and each sub-pixel may include a thin film transistor T and a light emitting device 80 connected to the thin film transistor T.

[0085] The thin film transistor T is located on one side of the substrate 10, and includes a semiconductor layer 414, a gate electrode 412, a source electrode 411, and a drain electrode 415. According to the positional relationship between the gate electrode 412 and the semiconductor layer 414, the thin film transistor T can be a top-gate thin film transistor T or a bottom-gate thin film transistor T, such as Figure 3 As shown, the thin film transistor T shown is a top-gate thin film transistor T. Figure 3 As shown, the gate 412 is located on the side of the semiconductor layer 414 facing away from the substrate 10, a first gate insulating layer 413 is included between the gate 412 and the semiconductor layer 414, a second gate insulating layer 40 is included on the side of the gate 412 facing away from the substrate 10, and a source electrode 411 and a drain electrode 415 are included on the side of the second gate insulating layer 40 facing away from the substrate 10, wherein the portion of the semiconductor layer 414 projected by the gate 412 is a channel region, and the region other than the channel region is a non-channel region, and the non-channel regions are respectively located on opposite sides of the channel, wherein the source electrode 411 is connected to one side of the non-channel region, and the drain electrode 415 is connected to the other side of the non-channel region.

[0086] A pixel defining layer 90 may be formed on a side of the thin film transistor T facing away from the substrate 10 . The pixel defining layer 90 is provided with an opening area 91 . The opening area 91 is used to place the light emitting device 80 .

[0087] Among them, Figure 3 As shown, a microlens layer 70 is disposed on the side of the thin film transistor T facing away from the substrate 10. The microlens layer 70 may be formed of an organic or inorganic material. The microlens layer 70 includes a plurality of microlenses 70A arranged in an array. The plurality of microlenses 70A may be located in the opening area 91, for example, Figure 3 As shown, the orthographic projections of the plurality of microlenses 70A on the substrate 10 may be located in the opening area 91; the pixel defining layer 90 may be located on the side of the microlens layer 70 facing away from the substrate 10. The microlens layer 70 may include a portion located in the opening area 91 and a portion other than the opening area 91, the plurality of microlenses 70A may be located in the opening area 91, and the surface of the portion other than the opening area 91 of the microlens layer 70 facing away from the substrate 10 may be flat.

[0088] Among them, when multiple microlenses 70A are arranged in an array, a gap can be formed between the microlenses 70A, and the gap can be smaller than the aperture of the microlens 70A. The microlens 70A can be used to modulate the light emitted by the light-emitting device 80, for example, to reduce the total reflection strips of the emitted light, thereby increasing the amount of light emitted by the light-emitting device 80 to the outside of the display panel, thereby increasing the light emission effect.

[0089] The positive projection of the microlens 70A on the substrate 10 may be a polygon, specifically, a regular polygon, or an irregular polygon; for example, an octagon, a pentagon, etc. Figure 3 As shown in FIG. 1 , due to the existence of the microlens layer 70, the microlens layer 70 forms a concave-convex morphology, so that the light emitting device 80 formed thereafter also has a concave-convex morphology. Figure 4B For example, the microlenses 70A can be arranged in a staggered manner on the substrate 10, so that the multiple microlenses 70A in the microlens layer 70 are arranged in a honeycomb shape, and thus the surface morphology of the anode 81 is also honeycomb-shaped. The regular polygon on the surface of the anode 81 can be understood as the shape of the positive projection of the microlenses 70A on the substrate.

[0090] The microlens 70A may be a convex lens or a cylindrical lens.

[0091] Among them, the light-emitting device 80 is located on the side of the microlens layer 70 away from the substrate 10, and the orthographic projection of the light-emitting device 80 on the substrate 10 can overlap with the opening area 91. Specifically, the light-emitting device 80 includes a light-emitting layer 82 and an electrode layer for promoting the light-emitting layer 82 to emit light. The electrode layer may include an anode 81 and a cathode 83. The anode 81 is located between the light-emitting layer 82 and the microlens layer 70, and the cathode 83 is located on the side of the light-emitting layer 82 away from the substrate 10.

[0092] Among them, the pixel defining layer can be located on the side of the anode 81 facing away from the substrate, the light-emitting layer 82 may include a portion located in the pixel defining layer and in direct contact with the pixel defining layer, and a portion located in the opening area 91; the cathode 83 may include a portion located in the pixel defining layer and in direct contact with the light-emitting layer on the pixel defining layer, and a portion located in the opening area 91.

[0093] like Figure 3 As shown, the overall morphology of the electrode layer and the light-emitting layer 82 also matches the concave-convex morphology of the microlens 70A.

[0094] The anode 81 may be electrically connected to the source electrode 411 or the drain electrode 415 of the thin film transistor T. For example, the anode 81 may be electrically connected to the source electrode 411 or the drain electrode 415 of the thin film transistor T through a via hole penetrating the microlens layer 70 and the passivation layer 50. The orthographic projection of the anode 81 on the substrate 10 may cover the orthographic projection of the opening area 91 on the substrate 10. Since the display panel includes a plurality of light-emitting devices 80, each light-emitting device 80 may be regarded as a sub-pixel of the display panel, and the orthographic projections of the anodes 81 in the plurality of light-emitting devices 80 on the substrate 10 do not overlap each other, that is, the anodes 81 of the plurality of light-emitting devices 80 are insulated from each other.

[0095] The cathode 83 may be formed on the side of the light emitting layer 82 facing away from the substrate 10 , and the positive projection of the cathode 83 on the substrate 10 may cover the entire surface of the substrate 10 .

[0096] Among them, the orthographic projection of the light-emitting layer 82 on the substrate 10 can cover the orthographic projection of the opening area 91 on the substrate 10. Since the display panel includes a plurality of light-emitting devices 80, each light-emitting device 80 can be regarded as a sub-pixel of the display panel, and the orthographic projections of the light-emitting layers 82 in the plurality of light-emitting devices 80 on the substrate 10 do not overlap with each other. In this way, cross-color between the light-emitting devices 80 emitting light of different colors can be avoided.

[0097] Among them, Figure 4A As shown, the light emitting device 80 in at least one sub-pixel may include a first area 80a and a second area 80b. The first area 80a is a area that can emit light. For example, the light emitting layer 82 in the first area 80a can emit light when a voltage is applied to the anode 81 and a voltage is applied to the cathode 83. Figure 4A As shown, the first section 80 a may completely include the cathode 83 , the anode 81 and the light emitting layer 82 .

[0098] Among them, the second area 80b can be adjacent to the first area 80a, and the orthographic projection of the second area 80b on the substrate is located in the opening area 91. In the light-emitting device in the opening area 91, the anode, the light-emitting layer and the cathode are stacked layer by layer, and the second area 80b is the part of the light-emitting device located in the opening area, and the second area 80b is a non-luminous area. For example, the light-emitting layer 82 in the second area 80b may not emit light when a voltage is applied to the anode 81 and a voltage is applied to the cathode 83, such as Figure 4A As shown, the electrode layer in the second area 80b is missing, and the missing may refer to the lack of conductive material in the electrode layer in the second area 80b, so no current will flow through the second area 80b. In this way, the current in the second area 80b that excites the light-emitting layer 82 to emit light is cut off, so that even if the thin film transistor T applies voltage to the anode 81, the second area 80b will not have a current that excites the light-emitting layer 82 to emit light. In this way, because only a part of the area of ​​the light-emitting layer 82 is configured to have current flowing through to make the light-emitting layer 82 emit light, the power consumption of the entire display panel can be saved.

[0099] In one example, the anode 81 in the electrode layer of the second section 80b may be missing ( Figure 3 and Figure 5 The position marked with "×" in the figure), that is, the anode 81 lacks a conductive material in the second section 80b; Figure 3 and Figure 5 As shown, Figure 5 FIG. 4 shows a cross-sectional schematic diagram of a sub-pixel region of a display panel. Figure 3 As shown, the anode 81 on the microlens 70A in the electrode layer is missing, or, as shown in FIG. Figure 5 As shown, the anode 81 located between the gaps of the microlenses 70A in the electrode layer is missing.

[0100] In one example, the cathode 83 in the electrode layer of the second section 80b may be missing, that is, the cathode 83 lacks a conductive material in the second section 80b. Figure 7 As shown, Figure 7 FIG. 4 shows a cross-sectional schematic diagram of a sub-pixel of a display panel. Figure 8 As shown, Figure 8 Shows Figure 7 The cross-sectional schematic diagram of the light emitting device 80 in the display panel shown in the figure shows that the cathode 83 on the microlens 70A in the electrode layer is missing, or the cathode 83 between the microlenses 70A is missing.

[0101] In the case where the cathode 83 lacks a conductive material in a part of the opening area, the positive projection of the cathode on the substrate in the opening area is in a grid shape, the second area can be located in the grid, and the grid lines of the grid pattern can be the conductive area of ​​the cathode 83. Figure 4B The grid shown is for reference. Figure 4B The figure shows the orthographic projection of the anode 81 when the conductive material in the partial area within the opening area is missing.

[0102] In one example, both the anode 81 and the cathode 83 in the second section 80 b may be missing, that is, the second section 80 b may not include a conductive material of the cathode 83 or a conductive material of the anode 81 .

[0103] In which, a light-emitting device 80 may include at least one second region 80b, such as including multiple second regions 80b. In one example, the number of second regions 80b may be comparable to the number of microlenses 70A in a sub-pixel. For example, the difference between the number of second regions 80b and the number of microlenses 70A in a sub-pixel may be small.

[0104] The light emitting device 80 in each sub-pixel may include at least one second region 80 b , thereby saving power consumption to the greatest extent.

[0105] The light emitting device 80 in some sub-pixels may include at least one second region 80b, for example, Figure 2 As shown, the light emitting device 80 located at the edges of the display area AA can include at least one second area 80b. Since the light emitting device 80 at the edge is closer to the driver chip (source driver chip, gate 412 driver chip), the voltage drop is small, and the light emitting brightness is higher than the brightness of the light emitting device 80 in the middle area AA1. Therefore, when the light emitting device 80 at the edges includes the second area 80b and the light emitting device 80 in the middle area AA1 does not include the second area 80b, the light emitting layer 82 of the light emitting device 80 in the middle area AA1 can be made to emit light completely, thereby ensuring the uniformity of the display brightness.

[0106] Among them, Figure 2 As shown, the edge area refers to the area of ​​the display area AA except the middle area AA1.

[0107] It should be noted that, in the case of including a plurality of second sections 80b, Figure 4BAs shown, multiple second sections 80b can be spaced apart, and the electrode layer in the first section 80a is a continuous film layer, thereby ensuring the conductivity of the electrode layer in the first section 80a. That is, the second section 80b can be regarded as an insulating area in the middle area of ​​the electrode layer, which does not affect the continuity of the first section 80a.

[0108] In some embodiments, Fig.11 As shown, Fig.11 An enlarged schematic diagram of a local area of ​​the light-emitting device 80 is shown, wherein the first area 80a is at least located on the side wall 74 of the microlens 70A, and the orthographic projection of the second area 80b on the substrate 10 is located within the orthographic projection of a single microlens 70A on the substrate 10, and / or is located in the gap between the orthographic projections of two adjacent microlenses 70A on the substrate 10.

[0109] Among them, combined Figure 4A and Fig.11 As shown, the first area 80a includes at least a portion located on the side wall 74 of the microlens 70A. Since the thickness of the light-emitting layer 82 is relatively small, the driving current can be reduced. In this way, the light-emitting device 80 can be driven to emit light under a relatively small driving current, thereby further saving power consumption.

[0110] The sidewall 74 of the microlens 70A refers to the surface of the microlens 70A except the top surface facing away from the substrate 10 and the bottom surface close to the substrate 10 .

[0111] The orthographic projection of the first area 80a on the substrate 10 may overlap with the orthographic projection of the side wall 74 of the microlens 70A on the substrate 10, and the overlap may include the following situations:

[0112] Case 1: the orthographic projection of the first area 80 a on the substrate 10 falls within the orthographic projection of the side wall 74 of the microlens 70A on the substrate 10 . In this case, a partial area on the side wall 74 of the microlens 70A is the first area 80 a .

[0113] Case 2: The orthographic projection of the first area 80 a on the substrate 10 covers the orthographic projection of the side wall 74 of the microlens 70A on the substrate 10 . In this case, the entire area on the side wall 74 of the microlens 70A is the first area 80 a .

[0114] Case 3: The orthographic projection of the first section 80a on the substrate 10 intersects with the orthographic projection of the side wall 74 of the microlens 70A on the substrate 10. In this case, a partial area on the side wall 74 of the microlens 70A is the first section 80a, and the first section 80a may also include a portion that is not located on the side wall 74 of the microlens 70A.

[0115] In this example, since all the current flows through the thin sidewall layer with a low turn-on voltage, the current luminous efficiency is higher, and the color point of the light emitted by the single slope is more stable and single.

[0116] The second section 80 b of the light emitting device 80 is a section other than the first section 80 a .

[0117] In one example, the second region 80 b may be located within the orthographic projection of the microlens 70A on the substrate 10 , so that the second region 80 b includes a portion located on the top surface of the microlens 70A, for example, may be located within the orthographic projection of the top surface of the microlens 70A on the substrate 10 .

[0118] Alternatively, the second area 80 b overlaps with the orthographic projection of the side wall 74 of the microlens 70A on the substrate 10 , so that the second area 80 b may also include a portion located on the side wall 74 of the microlens 70A;

[0119] Alternatively, the second portion 80 b covers a gap between orthographic projections of the sidewalls 74 of adjacent microlenses 70A on the substrate 10 , and thus, the second portion 80 b may include a portion located in a recessed region of the microlens layer 70 .

[0120] In one example, Figure 3 As shown, the orthographic projection of the second area 80b on the substrate 10 can be located within the orthographic projection of the microlens 70A on the substrate 10. For example, the second area 80b can be located within the orthographic projection of the top surface of the microlens 70A on the substrate 10, so that the top surface area of ​​the microlens 70A does not emit light, that is, the convex portion 811 of the light-emitting device 80 does not emit light. In this way, when the display panel enters the display state, the light-emitting area of ​​the side wall 74 can be used for narrow viewing angle products due to the concentrated light direction, thereby achieving the effect of protecting personal privacy.

[0121] In some embodiments, the thickness of the portion of the light-emitting layer 82 located in the first section 80a is less than the thickness of the portion located in the second section 80b. In this way, the portion of the light-emitting layer 82 with a thinner thickness is used as the first section 80a to emit light under current excitation. Since the thickness of the light-emitting layer 82 in the first section 80a is less than the thickness of the light-emitting layer 82 in the second section 80b, the driving current for driving the first section 80a to emit light can be reduced, so that the light-emitting layer 82 emits light under a smaller driving current, thereby further saving power consumption.

[0122] In some embodiments, the second area 80b may be located on the top surface of the microlens 70A, so that the first area 80a may include a portion located on the sidewall 74 of the microlens 70A and a portion located at the gap between the microlenses 70A. Fig.12As shown, the first area 80a includes a first sub-area a1 and a second sub-area a2, the orthographic projection of the first sub-area a1 on the substrate 10 is located within the orthographic projection of the microlens 70A on the substrate 10, and the orthographic projection of the second sub-area a2 on the substrate 10 is located within the orthographic projections of two adjacent microlenses 70A on the substrate 10;

[0123] The thickness h1 of the light emitting layer 82 in the first sub-region a1 is smaller than the thickness h2 of the light emitting layer 82 in the second sub-region a2.

[0124] The first sub-area a1 may be a portion located at the side wall 74 of the microlens 70A, and the second sub-area a1 may be a portion located at the gap between the microlenses 70A. In this way, the light emitting layer 82 located at the portion of the side wall 74 of the microlens 70A and the gap between the microlenses 70A emits light, wherein the thickness h1 of the light emitting layer 82 in the first sub-area may be less than the thickness h2 of the light emitting layer 82 in the second sub-area. In this way, the light efficiency of the portion of the side wall 74 of the microlens 70A may be improved, so that the light output of the side wall 74 of the microlens 70A is better.

[0125] Furthermore, when the thickness of the first sub-area a1 is less than the thickness of the second sub-area a2, the color temperature of the light emitted by the first sub-area is higher, and the overall power consumption of the product is reduced while meeting the high color temperature requirements of customers. For example, when users want to increase the color temperature, they generally increase the driving current. Since the light-emitting layer 82 of the side wall 74 is thinner and the area on the top of the microlens does not emit light, the power consumption for achieving the required color temperature is significantly reduced.

[0126] Since the electrode layer in the second section 80b is missing, the anode 81 in the electrode layer in the second section 80b may be missing in some embodiments, where Figure 3 As shown, the anode 81 on the microlens 70A in the electrode layer is missing, for example, the anode 81 on the top surface of the lens away from the substrate 10 is missing, so that the orthographic projection of the second area 80b on the substrate 10 can be located within the orthographic projection of the single microlens 70A on the substrate 10. And because there is no reflective anode 81 on the top surface of the microlens 70A, the reflection of external incident light can be reduced, so that the black visual effect of the display panel is better.

[0127] The top of the lens 70A may refer to: the vertical distance between the surface of the lens 70A facing away from the substrate 10 and the substrate, and the area within the range of A% to 100% of the maximum vertical distance between the surface of the microlens facing away from the substrate 10 and the substrate, and A may be 75 to 80. The range of A% to 100% includes A% and 100%.

[0128] For example, in the top area of ​​the lens 70A, the vertical distance between the surface on the side facing away from the substrate 10 and the substrate is distributed in the range of 75% to 100% of the maximum vertical distance; for another example, in the top area of ​​the lens 70A, the vertical distance between the surface on the side facing away from the substrate 10 and the substrate is distributed in the range of 92% to 100% of the maximum vertical distance.

[0129] Among them, Figure 5 and Figure 6 As shown, the anode 81 in the electrode layer located between the gaps of the microlenses 70A is missing, so that the orthographic projection of the second area 80 b on the substrate 10 is located in the gap between the orthographic projections of two adjacent microlenses 70A on the substrate 10 .

[0130] In one example, Figure 7 As shown, the cathode 83 in the electrode layer of the second zone 80b can be missing, and the cathode 83 in the electrode layer located on the top surface of the microlens 70A facing away from the substrate 10 is missing, so that the orthographic projection of the second zone 80b on the substrate 10 can be located within the orthographic projection of the single microlens 70A on the substrate 10.

[0131] In which, in the case where the anode 81 or the cathode 83 is missing in the second zone 80b, the missing area can be located within the orthographic projection of the microlens 70A on the substrate 10, or can be located between the orthographic projections of adjacent microlenses 70A on the substrate 10, or the electrode layer is missing in both the area covered by the microlens 70A and the area between the microlenses 70A.

[0132] In one embodiment, the region where the electrode layer is missing may be located in the region covered by the microlens 70A, for example, the region where the electrode layer is missing may be located on the top surface of the microlens 70A. In this case, the orthographic projection of the first region 80a on the substrate 10 may cover the orthographic projection of the sidewall 74 of the microlens 70A on the substrate 10.

[0133] Accordingly, if Fig.11 As shown, the orthographic projection of the second area 80b on the substrate 10 is located within the orthographic projection of the top surface of the single microlens 70A facing away from the substrate 10 on the substrate 10. As a result, the electrode layer at the top 811 of the microlens 70A is missing. In this case, please combine Figure 4A and Figure 4B As shown, Figure 4B The middle octagonal area is the orthographic projection area of ​​the microlens 70A on the substrate 10 , wherein the conductive material of the anode 81 at the top of the microlens 70A is missing, thereby making the area of ​​the anode 81 at the top of the microlens 70A non-conductive.

[0134] In this case, if Fig.11As shown, a vertical distance d2 between a side surface of the second area 80b in the light-emitting device 80 that is away from the substrate 10 and the substrate 10 may be greater than a maximum vertical distance d1 between a side surface of the first area 80a in the light-emitting device 80 that is away from the substrate 10 and the substrate 10, so that the raised portion of the light-emitting device 80 having a concave-convex morphology does not emit light, while the side wall 74 and the concave portion emit light.

[0135] As another example, Fig.11 As shown, the vertical distance d2 between the second area 80b of the anode 81 in the electrode layer and the substrate 10 when the top 811 is missing and the surface of the side facing away from the substrate 10 can be greater than the maximum vertical distance d1 between the surface of the side facing away from the substrate 10 and the substrate 10 of the first area 80a. In this way, the light-emitting device 80 emits light in the area located on the side wall 74 of the microlens 70A and the area between the gap of the microlens 70A.

[0136] Similarly, when the top 811 of the cathode 83 in the electrode layer is missing, the vertical distance d2 between the surface of the second area 80b facing away from the substrate 10 and the substrate 10 can be less than or equal to the maximum vertical distance d1 between the surface of the first area 80a facing away from the substrate 10 and the substrate 10. Figure 8 As shown, since the cathode 83 of the raised portion in the light-emitting device 80 is removed, the light-emitting layer 82 can be exposed, thereby making the vertical distance d2 between the side surface of the second section 80b facing away from the substrate 10 and the substrate 10 equal to the maximum vertical distance d1 between the side surface of the first section 80a facing away from the substrate 10 and the substrate 10.

[0137] The following description will be made by taking the case where the anode 81 in the second area 80 b is missing as an example.

[0138] In some embodiments, Figure 3 As shown, the sub-pixel may further include a thin film transistor T, the thin film transistor T is located on one side of the substrate 10, and the microlens layer 70 is located on the side of the thin film transistor T away from the substrate 10;

[0139] The anode 81 includes a conductive region 81a located in the first region 80a and an insulating region 81b located in the second region 80b. The conductive region 81a includes a conductive material, and the insulating region 81b lacks a conductive material. The conductive region 81a is connected to the thin film transistor T.

[0140] In this embodiment, the anode 81 may include a conductive region 81a and an insulating region 81b, the conductive region 81a includes a conductive material, the conductive material is missing in the insulating region 81b, and the conductive region 81a is connected to the thin film transistor T; wherein the conductive region 81a may be connected to the source electrode 411 or the drain electrode 415 of the thin film transistor T. Since the anode 81 in the insulating region 81b is missing, the current transmission path between the insulating region 81b and the conductive region 81a is cut off, so that the light-emitting layer 82 here cannot emit light.

[0141] The orthographic projection of the conductive region 81 a on the substrate 10 coincides with the orthographic projection of the first region 80 a on the substrate 10 , and the outer contour of the orthographic projection of the insulating region 81 b on the substrate 10 coincides with the orthographic projection of the second region 80 b on the substrate 10 .

[0142] Among them, Figure 3 As shown, the insulating region 81b may be located within the orthographic projection of the microlens 70A on the substrate 10, for example, within the orthographic projection of the top surface of the microlens 70A on the substrate 10. Alternatively, as shown in FIG. Figure 6 As shown, the insulating region 81 b may be located in the gaps between the microlenses 70A, for example, between the orthographic projections of the microlenses 70A on the substrate 10 .

[0143] In this example, the shape of the orthographic projection of the insulating region 81b on the substrate 10 may be a polygon, or may be a polygonal ring, for example, Figure 4B As shown, the shape of the orthographic projection of the insulating region 81 b on the substrate 10 may be a polygon. In the case of a polygon, the orthographic projection of the insulating region 81 b on the substrate 10 may coincide with the orthographic projection of the second region 80 b on the substrate 10 .

[0144] In this example, the shape of the orthographic projection of the insulating region 81b on the substrate 10 may be a polygonal ring, for example, Figure 4C As shown, the shape of the orthographic projection of the insulating region 81b on the substrate 10 may be a ring octagon. In this case, the outer contour of the orthographic projection of the insulating region 81b on the substrate 10 may coincide with the outer contour of the orthographic projection of the second area 80b on the substrate 10. The insulating region 81b defines a non-luminous area. In this way, a conductive object may exist in the area enclosed by the insulating region 81b. In this case, even if a conductive object may exist in the area enclosed by the insulating region 81b, the anode 81 is incomplete at this point, because the insulating region 81b is equivalent to an insulating belt, and the current is cut off at this point. Therefore, there will be no current in the second area 80b to excite the light-emitting layer 82 to emit light. In this way, the area enclosed by the outer contour of the insulating region 81b is the second area 80b.

[0145] In the case where the conductive material in the insulating region 81b is missing, in one example, an insulating material can be deposited in the insulating region 81b to ensure the insulating performance of the insulating region 81b. In this case, the light-emitting layer 82 is not in direct contact with the microlens layer 70, that is, in the insulating region 81b, there is also an insulating film layer between the microlens 70A and the light-emitting layer 82, and the thickness of the insulating film layer can be greater than or equal to the thickness of the anode 81, for example, greater than the thickness of the conductive material in the conductive region 81a.

[0146] In another example, when the conductive material in the insulating region 81b is missing, Fig.11 As shown, the anode 81 layer may be hollowed out in the insulating region 81b. For example, after the anode 81 is formed, the anode 81 layer is etched to remove the conductive material in the insulating region 81b. Then, when the light-emitting layer 82 is formed on the side of the anode 81 away from the substrate 10, the light-emitting layer 82 is in direct contact with the microlens layer 70. Alternatively, the anode 81 layer is formed by a mask process, so that no conductive material of the anode 81 is deposited in the insulating region 81b, and the light-emitting layer 82 is also in direct contact with the microlens layer 70.

[0147] Based on this, it can be seen that based on the process of missing the anode 81 in the insulating region 81b, the morphology of the microlens layer 70 can be slightly different. Exemplarily, the surface of the side of the region corresponding to the insulating region 81b in the microlens layer 70 facing away from the substrate 10 is a plane or a curved surface; wherein the orthographic projection of the region corresponding to the insulating region 81b on the substrate 10 overlaps with the orthographic projection of the insulating region 81b on the substrate 10.

[0148] Please combine Fig.11 and Fig.12 As shown, the conductive material is missing from the insulating region 81b of the anode 81. In practice, after the anode 81 layer is formed, the anode 81 layer can be etched to remove the conductive material in the insulating region 81b. In this case, when the insulating region 81b is located at the top 811 of the microlens 70A, that is, the orthographic projection of the second region 80b on the substrate 10 is located within the orthographic projection of the top surface of the single microlens 70A facing away from the substrate 10 on the substrate 10, wherein the vertical distance d3 between different positions of the top surface of the microlens 70A facing away from the substrate 10 and the substrate 10 is the same or different.

[0149] In the case where the vertical distances d3 between different positions of the top surface of the microlens 70A facing away from the substrate 10 and the substrate 10 are the same, the top surface of the microlens 70A facing away from the substrate 10 may be a plane.

[0150] When the vertical distances between different positions of the top surface of the microlens 70A on the side facing away from the substrate 10 and the substrate 10 are different, the top surface of the microlens 70A on the side facing away from the substrate 10 may be an inclined surface or a curved surface; wherein the curved surface may be a curved surface convex toward the side facing away from the substrate 10, or a curved surface convex toward the substrate 10.

[0151] In which, due to the concavo-convex structure of the microlens layer 70, the anode 81 also has a concavo-convex structure. In order to simplify the etching process, the etching can be performed in a flattening manner, that is, flattening the convex structure portion, so that the top surface of the microlens layer 70 is flattened. In this case, Fig.12 As shown, the distances between the top surfaces of the microlenses 70A and the substrate 10 may be the same, so that the top surfaces 71 of the microlenses 70A facing away from the substrate 10 are flush.

[0152] When etching the anode 81, the chemical etching process may have a certain impact on the morphology of the microlens 70A. For example, a concave area may be formed on the top surface of the microlens 70A. Fig.14 As shown, the top surface of the microlens 70A facing away from the substrate 10 is a curved surface 72 , and the curved surface may be a curved surface convex toward the substrate 10 .

[0153] When the anode 81 layer is formed by a mask process, due to the effect of the mask plate, no conductive material of the anode 81 is deposited in the insulating region 81b, which will not affect the morphology of the microlens layer 70, so that the microlens 70A still maintains the original morphology. In this case, Fig.13 As shown, the top surface of the microlens 70A on the side facing away from the substrate 10 is a curved surface 72 , and the curved surface may be a curved surface convex in a direction facing away from the substrate 10 .

[0154] Since the anode 81 lacks conductive material in some areas, in some embodiments, the positive projection of the anode on the substrate may be in a grid shape, and thus, may include multiple insulating regions, that is, the insulating region 81b is embedded in the conductive region 81a, so that the positive projection of the anode 81 on the substrate is a grid pattern. In this case, the positive projection of the second region 80b on the substrate may fall within the grid of the grid pattern. For example, Figure 4B As shown, the pattern of the anode 81 on the substrate is in a grid shape, and the second area 80b falls within the grid.

[0155] In this example, the anode 81 lacks a conductive material in the insulating region 81b. In one example, in order to ensure the reliability of the electrical connection between the conductive region 81a of the anode 81 and the thin film transistor T, an auxiliary electrode layer 84 may be provided. Fig. 9 and Fig.10As shown, the display panel further includes: an auxiliary electrode layer 84, which is located on a side of the microlens layer 70 close to the substrate 10; wherein the auxiliary electrode layer 84 is connected to the conductive material and the thin film transistor T in the conductive area 81a.

[0156] In this embodiment, the auxiliary electrode layer 84 is connected to the thin film transistor T on one hand, and is connected to the conductive region 81a in the anode 81 on the other hand. The auxiliary electrode layer 84 can be connected to the source electrode 411 or the drain electrode 415 of the thin film transistor T, and the anode 81 can also be connected to the source electrode 411 or the drain electrode 415 of the thin film transistor T.

[0157] It should be noted that the auxiliary electrode layer 84 and the anode 81 are connected to the same electrode of the thin film transistor T.

[0158] like Fig. 9 and Fig.10 As shown, since the auxiliary electrode layer 84 and the anode 81 are located on opposite sides of the microlens layer 70, the auxiliary electrode layer 84 and the anode 81 need to be connected through a via 73 that penetrates the microlens layer 70; the via 73 can be located within the orthographic projection of the conductive area 81a.

[0159] The conductive materials of the auxiliary electrode layer 84 and the anode 81 may be the same or different, and the thickness of the auxiliary electrode layer 84 may be the same or different from that of the anode 81 .

[0160] The surface of the auxiliary electrode layer 84 may be flush.

[0161] In one implementation of this example, if the anode 81 is missing at the top 811 of the microlens 70A, the orthographic projection of the first section 80a on the substrate 10 may include the area of ​​the sidewall 74 of the microlens 70A and the gap area between the microlenses 70A, so that the via 73 may be arranged at the location where the thickness of the microlens layer 70 is the smallest to reduce damage to the microlens 70A. Exemplarily, the microlens layer 70 further includes:

[0162] At least one via hole 73 , the orthographic projection of the via hole 73 on the substrate 10 is located in the gap between the orthographic projections of the microlenses 70A on the substrate 10 ; wherein the auxiliary electrode layer 84 is connected to the anode through the via hole 73 .

[0163] In this embodiment, the second area 80b may be located at the top 811 area of ​​the microlens 70A, and the first area 80a may include a portion of the sidewall 74 of the microlens 70A and a portion between the microlenses 70A. Fig.13 and Fig.14As shown, the via hole 73 is located at the gap between the microlenses 70A, and passes through the area of ​​the microlens layer 70 located at the gap between the microlenses 70A. The thickness of the microlens layer 70 in this area is relatively small, and the via hole 73 avoids the microlens 70A, so the microlens 70A will not be damaged.

[0164] The dimension of the via hole 73 in the thickness direction of the substrate 10 is smaller than the thickness of the microlens layer 70 except the via hole 73 .

[0165] The dimension of the via hole 73 in the thickness direction of the substrate 10 can be understood as the depth of the via hole 73. In this way, the depth of the via hole 73 can be less than the thickness of the microlens layer 70 except the via hole 73 area, so that the via hole 73 is located at the thinnest part of the microlens layer 70.

[0166] The diameter of the via hole 73 may be smaller than the gap between the micro lenses 70A, thereby avoiding the micro lenses 70A from being opened, thereby preventing the micro lenses 70A from being damaged during the opening process.

[0167] In a further example of this embodiment, to ensure the connection between the auxiliary electrode layer 84 and the anode layer 81, the orthographic projection of the thin film transistor T on the substrate 10 may overlap with the orthographic projection of the light emitting layer 82 on the substrate 10. For example, Fig.10 As shown, the orthographic projection of the thin film transistor T on the substrate 10 may be located within the orthographic projection of the light emitting layer 82 on the substrate 10 .

[0168] For example, the orthographic projection of the thin film transistor T on the substrate 10 may be located within the orthographic projection of the opening area 91 on the substrate 10 , so that the display panel may be a top-emitting display panel.

[0169] In one example of this embodiment, Fig.10 As shown, the display panel may further include a photoresist layer 60, which may be located on a side of the thin film transistor T close to the substrate 10. For example, the orthographic projection of the photoresist layer 60 on the substrate 10 may cover the orthographic projection of the light emitting device 80 on the substrate 10, thereby preventing the light emitted by the light emitting device 80 from being emitted from one side of the substrate 10.

[0170] Among them, the photoresist layer 60 can be formed of a conductive material, for example, it can be an opaque metal material or a metal oxide material, and the auxiliary electrode layer 84 can be electrically connected to the photoresist layer 60. In this way, on the one hand, a capacitor can be formed between the auxiliary electrode layer 84 and the photoresist layer 60, and on the other hand, the impedance of the anode 81 can be improved, thereby improving the luminous efficiency.

[0171] In some other embodiments, such as Figure 3 As shown, Figure 5 , Figure 7As shown, the display panel may further include a first buffer layer 20 and a second buffer layer 30 located between the substrate 10 and the thin film transistor T, a first passivation layer 50 located on the side of the second gate insulating layer 40 away from the substrate 10, a photoresist layer 60 located on the side of the first passivation layer 50 away from the substrate 10, and a microlens layer 70 located on the side of the photoresist layer 60 away from the substrate 10.

[0172] In some other embodiments, such as Fig. 9 As shown, the display panel may further include a first buffer layer 20 and a second buffer layer 30 located between the substrate 10 and the thin film transistor T, a first passivation layer 50 located on the side of the second gate insulating layer 40 away from the substrate 10, a photoresist layer 60 located on the side of the first passivation layer 50 away from the substrate 10, a second passivation layer 51 located on the side of the photoresist layer 60 away from the substrate 10, and an auxiliary electrode layer 84 located on the side of the second passivation layer 51 away from the substrate 10.

[0173] In some other embodiments, as shown in 10, the display panel may also include a first buffer layer 20 located on one side of the substrate 10, a photoresist layer 60 located on the side of the first buffer layer facing away from the substrate 10, a second buffer layer 30 located on the side of the photoresist layer 60 facing away from the substrate 10, and a first passivation layer 50 located on the side of the second gate insulating layer 40 facing away from the substrate 10, and an auxiliary electrode layer 84 located on the side of the first passivation layer 50 facing away from the substrate 10.

[0174] In some embodiments, a method for forming a display panel is provided, the method comprising the following steps:

[0175] Step S101: forming a microlens layer 70 on one side of the substrate 10, wherein the microlens layer 70 includes a plurality of microlenses 70A;

[0176] Step S102: forming a light-emitting device 80 on a side of the microlens layer 70 away from the substrate 10, wherein the light-emitting device 80 includes an electrode layer and a light-emitting layer 82, wherein the electrode layer includes an anode 81 and a cathode 83 located on opposite sides of the light-emitting layer 82; wherein the light-emitting device 80 includes a first area 80a and a second area 80b, wherein the light-emitting layer 82 in the first area 80a emits light when driven by a current between the anode 81 and the cathode 83, and the electrode layer in the second area 80b is at least partially missing.

[0177] In this embodiment, a microlens layer 70 may be formed on one side of the substrate 10. The microlens layer 70 includes a plurality of microlenses 70A. The plurality of microlenses 70A may be arranged in an array. The plurality of microlenses 70A may be located in the sub-pixel area PA, for example, in the opening area 91 of the sub-pixel area PA.

[0178] Next, a light emitting device 80 may be formed on one side of the microlens layer 70 , such as first forming an anode 81 of the light emitting device 80 , then forming a light emitting layer 82 of the light emitting device 80 , and then forming a cathode 83 on the light emitting layer 82 .

[0179] Among them, since the conductive material is missing in some areas of the electrode layer (cathode 83 and / or anode 81), the conductive material in some areas of the anode 81 and / or cathode 83 can be removed after the anode 81 and / or cathode 83 are formed.

[0180] For example, after forming the anode 81, the conductive material in a part of the anode 81 may be removed, and then the light-emitting layer 82 may be formed, and then the cathode 83 may be formed on the light-emitting layer 82. In this way, the area of ​​the light-emitting device 80 where the conductive material is removed is called the second area 80b, and the area outside the second area 80b is called the first area 80a. The cathode 83 and the anode 81 are retained in the first area 80a, and the light-emitting layer 82 emits light under the current driving between the cathode 83 and the anode 81. The anode 81 in the second area 80b does not contain the conductive material, and the light-emitting layer 82 does not generate a driving current between the cathode 83 and the anode 81 in the second area 80b, and thus does not emit light, that is, the driving current does not flow through the second area 80b, so the driving current can be reduced, thereby saving power consumption.

[0181] As another example, after forming the cathode 83 , the conductive material in a partial region of the cathode 83 may be removed to form the second region 80 b of the light emitting device 80 , and the region outside the second region 80 b is the first region 80 a .

[0182] As another example, when forming the anode 81 , a mask plate may be used to form the anode 81 , so that the conductive material of the anode 81 will not be formed in a part of the area within the opening area 91 , thereby achieving the purpose of missing the anode 81 in a part of the area.

[0183] In the display panel formed by this formation method, since the electrode layer in the second area 80b of the light-emitting device 80 is missing, the driving current for driving the light-emitting device 80 to emit light can be reduced as a whole, thereby reducing power consumption.

[0184] In some embodiments, when the light emitting device 80 is formed on the side of the microlens layer 70 away from the substrate 10, the conductive material in a partial region of the anode 81 may be removed. For example, after the anode 81 is formed on the side of the microlens layer 70 away from the substrate 10, the conductive material in a target region of the anode 81 may be removed, wherein the target region is a partial region of the anode 81, and the orthographic projection of the target region on the substrate 10 is located within the orthographic projection of a single microlens 70A on the substrate 10, and / or is located between the orthographic projections of two adjacent microlenses 70A on the substrate 10;

[0185] Next, a light emitting layer 82 may be formed on the side of the anode 81 facing away from the substrate 10;

[0186] Next, a cathode 83 may be formed on the side of the light emitting layer 82 facing away from the substrate 10 to obtain a light emitting device 80;

[0187] The portion of the light emitting device 80 located in the target area is the second area 80 b , and the portion of the anode 81 located in an area other than the target area is the first area 80 a .

[0188] In this embodiment, it can be combined with Fig.15 -- Fig.18 As shown in FIG. 1 , when forming the microlens layer 70, a via hole 73 may be formed in the microlens layer. The via hole 73 may be formed in the same process as the microlens layer 70. For example, the via hole 73 may be etched out in the process of etching the microlens. Then, an anode 81 may be formed on the side of the microlens layer 70 facing away from the substrate 10. Fig.16 As shown, then, Fig.17 As shown, the conductive material in the target area of ​​the anode 81 is removed, for example, the conductive material in the top area 811 of the microlens of the anode 81 is removed;

[0189] When removing the conductive material, the target area of ​​the anode 81 can be etched to remove the conductive material in the target area. When etching, chemical etching or other methods can be used. To reduce the difficulty of etching, a flattening method can be used, so that a part of the top area of ​​the microlens 70A can be removed, thereby making the top 811 of the microlens 70A present a flush surface, such as Fig.17 As shown, the anode 81 is not present on the top 811 of the microlens 70A.

[0190] Then, if Fig.18 As shown, a light emitting layer 82 may be formed on the side of the anode 81 facing away from the substrate 10 , and the surface of the light emitting layer 82 is flush with the region of the top 811 of the microlens 70A.

[0191] Next, a cathode 83 is formed on the side of the light emitting layer 82 facing away from the substrate 10. The surface of the cathode 83 located at the top 811 of the microlens 70A is flush with the surface of the microlens 70A. Fig.10 The structure shown.

[0192] The target area may also be the top area 811 of the microlens 70A, or the gap area between the microlenses 70A. Fig.17 Take the top region 811 of the microlens 70A as an example.

[0193] In some embodiments, the orthographic projection of the target area on the substrate 10 is located within the orthographic projection of the microlens 70A on the substrate 10, so that the second region 80b can be located on the side of the microlens 70A facing away from the substrate 10, for example, located at the top area 811 of the microlens 70A, wherein an auxiliary electrode layer 84 can also be formed on one side of the substrate 10 before forming the microlens layer 70.

[0194] Next, a microlens layer 70 may be formed on the side of the auxiliary electrode layer 84 facing away from the substrate 10, and then an anode 81 may be formed on the side of the microlens layer 70 facing away from the substrate 10. Before forming the anode 81, a via hole 73 may be opened in the microlens layer 70 at a gap between two adjacent microlenses 70A, so that the anode 81 is electrically connected to the auxiliary electrode layer 84 through the via hole 73.

[0195] The present disclosure also provides a display device, which may include the above-mentioned Figure 1-Figure 14 Any display panel described above.

[0196] The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

[0197] Finally, it should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, commodity or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, commodity or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, commodity or device including the elements.

[0198] The above is a detailed introduction to a display panel and a method for forming a display panel provided by the present disclosure. Specific examples are used herein to illustrate the principles and implementation methods of the present disclosure. The description of the above embodiments is only used to help understand the method of the present disclosure and its core idea. At the same time, for a person skilled in the art, according to the idea of ​​the present disclosure, there will be changes in the specific implementation method and application scope. In summary, the content of this specification should not be understood as a limitation on the present disclosure.

[0199] Those skilled in the art will readily appreciate other embodiments of the present disclosure after considering the specification and practicing the invention disclosed herein. The present disclosure is intended to cover any variations, uses or adaptations of the present disclosure that follow the general principles of the present disclosure and include common knowledge or customary techniques in the art that are not disclosed in the present disclosure. The description and examples are to be considered exemplary only, and the true scope and spirit of the present disclosure are indicated by the following claims.

[0200] It should be understood that the present disclosure is not limited to the exact structures that have been described above and shown in the drawings, and that various modifications and changes may be made without departing from the scope thereof. The scope of the present disclosure is limited only by the appended claims.

[0201] References herein to "one embodiment," "embodiment," or "one or more embodiments" mean that a particular feature, structure, or characteristic described in conjunction with the embodiment is included in at least one embodiment of the present disclosure. In addition, please note that examples of the term "in one embodiment" do not necessarily all refer to the same embodiment.

[0202] In the description provided herein, a large number of specific details are described. However, it is understood that the embodiments of the present disclosure can be practiced without these specific details. In some instances, well-known methods, structures and techniques are not shown in detail so as not to obscure the understanding of this description.

[0203] In the claims, any reference signs placed between brackets shall not be construed as limiting the claims. The word "comprising" does not exclude the presence of elements or steps not listed in the claims. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements. The present disclosure may be implemented by means of hardware comprising a number of different elements and by means of a suitably programmed computer. In a unit claim enumerating a number of means, several of these means may be embodied by the same item of hardware. The use of the words first, second, and third, etc. does not indicate any order. These words may be interpreted as names.

[0204] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present disclosure, rather than to limit them. Although the present disclosure has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for the technical features thereof. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present disclosure.

Claims

1. A display panel, characterized in that: include: A substrate, wherein one side of the substrate includes a plurality of sub-pixel regions, wherein the sub-pixel regions include: A microlens layer, located on one side of the substrate, comprising a plurality of microlenses; A light emitting device is located on a side of the microlens layer away from the substrate, and in the thickness direction of the substrate, the light emitting device comprises an electrode layer and a light emitting layer, wherein the electrode layer comprises an anode and a cathode located on opposite sides of the light emitting layer; In at least one of the sub-pixel areas, the light-emitting device includes a first area portion and a second area portion, the light-emitting layer in the first area portion emits light when driven by a current between the anode and the cathode, the electrode layer in the second area portion is at least partially missing, and the orthographic projection of the second area portion on the substrate is located within the opening area of ​​the sub-pixel area.

2. The display panel according to claim 1, characterized in that: The first area is at least partially located on the sidewall of the microlens; The orthographic projection of the second region on the substrate is located within the orthographic projection of a single microlens on the substrate and / or within a gap between orthographic projections of two adjacent microlenses on the substrate.

3. The display panel according to claim 2, characterized in that: The orthographic projection of the second region on the substrate is located within the orthographic projection of the top of the single microlens facing away from the substrate on the substrate.

4. The display panel according to claim 1, characterized in that: The sub-pixel area also includes: A thin film transistor is located on one side of the substrate, and the microlens layer is located on a side of the thin film transistor away from the substrate; The anode includes a conductive region located in the first region and an insulating region located in the second region, the conductive region includes a conductive material, the conductive material is missing in the insulating region, and the conductive region is connected to the thin film transistor.

5. The display panel according to claim 4, characterized in that: The light emitting layer in the second section is in direct contact with the microlens layer.

6. The display panel according to claim 4, characterized in that: The orthographic projection of the second region on the substrate is located within the orthographic projection of the top of the single microlens facing away from the substrate on the substrate; The vertical distances between different positions of the top of the microlens away from the substrate and the substrate are the same or different.

7. The display panel according to claim 4, characterized in that: The display panel further includes: an auxiliary electrode layer, located on a side of the microlens layer close to the substrate; Wherein, the auxiliary electrode layer is connected to the conductive area and the thin film transistor.

8. The display panel according to claim 7, characterized in that: The first region includes the region of the microlens sidewalls and the gap region between the microlenses, and the microlens layer further includes: at least one via hole, the orthographic projection of the via hole on the substrate being located within the orthographic projection of the gap region on the substrate; Wherein, the auxiliary electrode layer is connected to the conductive area through the via hole.

9. The display panel according to claim 7, characterized in that: The dimension of the via hole in the thickness direction of the substrate is smaller than the thickness of the microlens layer except the via hole.

10. The display panel according to claim 7, characterized in that: The display panel further includes: A photoresist layer is located on a side of the thin film transistor close to the substrate; the orthographic projection of the photoresist layer on the substrate covers the orthographic projection of the light emitting device on the substrate; Wherein, the auxiliary electrode layer is electrically connected to the photoresist layer.

11. The display panel according to claim 4, characterized in that: The portion of the orthographic projection of the anode on the substrate located within the opening area is in a grid-like pattern.

12. The display panel according to claim 1, characterized in that: The thickness of the light emitting layer located in the first area is smaller than the thickness of the light emitting layer located in the second area.

13. The display panel according to claim 1, characterized in that: The first area includes a first sub-area and a second sub-area, the first sub-area is located on a side wall of the microlens, and an orthographic projection of the second sub-area on the substrate is located between orthographic projections of two adjacent microlenses on the substrate; The thickness of the portion of the light-emitting layer located in the first sub-region is smaller than the thickness of the portion of the light-emitting layer located in the second sub-region.

14. A method for forming a display panel, characterized in that: The method is used to form the display panel according to any one of claims 1 to 13, and the forming method comprises: forming a microlens layer on one side of the substrate, the microlens layer comprising a plurality of microlenses; forming a light-emitting device on a side of the microlens layer away from the substrate, the light-emitting device comprising an electrode layer and a light-emitting layer, the electrode layer comprising an anode and a cathode located at opposite sides of the light-emitting layer; The light-emitting device comprises a first area and a second area, the light-emitting layer in the first area emits light when driven by a current between the anode and the cathode, and the electrode layer in the second area is at least partially missing.

15. The method for forming a display panel according to claim 14, wherein: A light emitting device is formed on a side of the microlens layer away from the substrate, comprising: forming an anode on a side of the microlens layer facing away from the substrate; Removing conductive materials in a target area of ​​the anode, wherein the target area is a partial area of ​​the anode, and the orthographic projection of the target area on the substrate is located within the orthographic projection of a single microlens on the substrate and / or between the orthographic projections of two adjacent microlenses on the substrate; forming a light-emitting layer on a side of the anode facing away from the substrate; forming a cathode on a side of the light-emitting layer away from the substrate to obtain the light-emitting device; The portion of the light emitting device located in the target area is the second region, and the portion of the anode located in an area other than the target area is the first region.

16. The method for forming a display panel according to claim 15, characterized in that: Before forming the microlens layer, the method further comprises: forming an auxiliary electrode layer on one side of the substrate; Forming the microlens layer includes: The microlens layer is formed on a side of the auxiliary electrode layer facing away from the substrate.

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