Processing accessories for processing chambers to facilitate deposition process adjustability and related methods

Abstract

The present disclosure relates to a flow guide for a processing chamber to facilitate deposition process adjustability, a processing kit, and a related method. In one embodiment, a deflector includes a middle plate having a first side and a second side opposite the first side along a first direction. The first side and the second side are arcuate. The deflector comprises a first flange which extends outwards relative to the third side of the middle plate and extends outwards relative to the outer side face of the middle plate; the second flange extends outwards relative to the fourth side of the middle plate and extends outwards relative to the outer side face of the middle plate. The fourth side is opposite to the third side along a second direction, and the second direction intersects with the first direction. The deflector includes a rectangular flow port defined between the first flange and the second flange.

Description

Technical Field

[0001] The present disclosure relates to process kits and related methods for use in process chambers to facilitate tunability of deposition processes. Background Art

[0002] Processing of semiconductor substrates has a wide range of applications, including the fabrication of integrated devices and micro-devices. During processing, various parameters may affect the uniformity of material deposited on the substrate. For example, the temperature of the substrate and / or the temperature of the processing chamber components may affect the uniformity of deposition.

[0003] Adjusting parameters such as gas flow rate and gas pressure to achieve uniformity of deposition can be difficult. If rotation of the substrate is used, the difficulty of adjustment may be exacerbated. Relatively low rotation speeds, high pressures, and low flow rates may also exacerbate the difficulty of adjustment. In addition, cleaning components of the processing chamber may be difficult.

[0004] Therefore, there is a need for improved process accessories and related methods to facilitate adjusting process parameters and cleaning process chamber components, such as at low rotation speeds, high pressures, and low flow rates. Summary of the invention

[0005] The present disclosure relates to a flow guide, a process accessory, and related methods for use in a processing chamber to facilitate adjustment of a deposition process. One or more process gases flow through a rectangular flow port while flowing through a substrate to form one or more layers on the substrate. In one or more embodiments, the rectangular flow port is defined between a first planar inner side of a first flange and a second planar inner side of a second flange. In one or more embodiments, the flow guide includes one or more openings that can be closed and opened to allow one or more cleaning gases to flow into an interior space at least partially defined by a window.

[0006] In one embodiment, a processing accessory for being disposed in a processing chamber suitable for semiconductor manufacturing includes a flow guide. The flow guide includes a middle plate having a first side and a second side opposite to the first side along a first direction. The first side and the second side are arc-shaped. The flow guide includes: a first flange extending outward relative to a third side of the middle plate and extending outward relative to an outer side surface of the middle plate; and a second flange extending outward relative to a fourth side of the middle plate and extending outward relative to the outer side surface of the middle plate. The fourth side is opposite to the third side along a second direction, and the second direction intersects the first direction. The flow guide includes: a rectangular flow port defined between a first planar inner side surface of the first flange and a second planar inner side surface of the second flange.

[0007] In one embodiment, a processing chamber suitable for semiconductor manufacturing includes: a window that at least partially defines an interior space; a plurality of lamps; and a substrate support member disposed in the interior space. The substrate support member includes a support surface. The processing chamber includes a processing accessory disposed in the interior space. The processing accessory includes a flow guide. The flow guide includes a middle plate that is disposed between the support surface and the plurality of lamps. The middle plate has a first side and a second side that is opposite to the first side along a first direction. The first side and the second side are arc-shaped. The processing accessory includes: a first flange that extends outwardly relative to a third side of the middle plate and extends outwardly relative to an outer side surface of the middle plate; and a second flange that extends outwardly relative to a fourth side of the middle plate and extends outwardly relative to the outer side surface of the middle plate. The fourth side is opposite to the third side along a second direction, and the second direction intersects the first direction. The flow guide includes: a rectangular flow port defined between a first planar inner side surface of the first flange and a second planar inner side surface of the second flange.

[0008] In one embodiment, a method of processing a substrate includes the steps of heating a substrate positioned on a substrate support; and flowing one or more process gases through the substrate to form one or more layers on the substrate. The step of flowing the one or more process gases through the substrate includes the steps of directing the one or more process gases through a rectangular flow port of a process accessory. The method includes the steps of lifting at least a portion of the process accessory to open one or more first openings and one or more second openings. The method includes the steps of flowing one or more cleaning gases through the one or more first openings and into an area between the deflector and the window; and flowing the one or more cleaning gases through the area and into the one or more second openings.

[0009] In one embodiment, a flow director suitable for semiconductor manufacturing includes: a plate having a first face and a second face opposite to the first face. The flow director includes: a first fin group extending from the second face; and a second fin group extending from the second face. The second fin group is spaced from the first fin group to define a flow path between the first fin group and the second fin group. The flow path has a serpentine pattern between the first fin group and the second fin group.

[0010] In one embodiment, a flow director suitable for semiconductor manufacturing includes: a plate having a first surface and a second surface opposite to the first surface. The flow director includes: a first fin group extending from the second surface. The first fin group has a plurality of first fins, and the first fins are spaced apart from each other to define a first set of flow paths. The flow director includes: a second fin group extending from the second surface. The second fin group has a plurality of second fins, and the second fins are spaced apart from each other to define a second set of flow paths. The flow director includes: a central flow path between a first inner fin of the first fin group and a second inner fin of the second fin group.

[0011] In one embodiment, a method of processing a substrate includes the steps of: heating a substrate positioned on a substrate support; and flowing one or more process gases through the substrate to form one or more layers on the substrate. The step of flowing the one or more process gases through the substrate includes the steps of: directing the one or more process gases through one or more flow paths, the one or more flow paths being at least partially defined by a plurality of fins extending from a plate of a flow director. The method includes the steps of: moving the plate to adjust a distance between the plurality of fins and the substrate.

[0012] In one embodiment, a process accessory for use in a process chamber suitable for semiconductor manufacturing includes: a plate having a first face and a second face opposite the first face. The process accessory includes: a liner. The liner includes: an annular segment; and one or more lugs extending inwardly relative to the annular segment. The one or more lugs are configured to support one or more external regions of the second face of the plate. The liner includes: one or more inlet openings extending to an inner surface of the annular segment on a first side of the liner; and one or more outlet openings extending to the inner surface of the annular segment on a second side of the liner.

[0013] In one embodiment, a processing chamber suitable for semiconductor manufacturing includes: an interior space; a plurality of lamps; and a substrate support disposed in the interior space. The substrate support includes a support surface. The processing chamber includes: a window that at least partially defines the interior space. The window includes: a first surface, the first surface is concave or flat; and a second surface, the second surface is convex, and the second surface faces the substrate support.

[0014] In one embodiment, a method of processing a substrate includes the steps of heating a substrate positioned on a substrate support of a chamber; and flowing one or more process gases through the substrate to form one or more layers on the substrate. The step of flowing the one or more process gases through the substrate includes the steps of directing the one or more process gases between a plate and the substrate. The plate is supported on a liner to divide the processing space into a lower portion and an upper portion. The method includes the steps of exhausting the one or more process gases; and flowing one or more cleaning gases through the upper portion while the plate is supported on the liner. The upper portion is between the plate and a window. The method includes the steps of exhausting the one or more cleaning gases. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] In order to be able to understand the above-mentioned features of the present disclosure in detail, a more detailed description of the present disclosure briefly summarized above can be obtained by reference to the embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the drawings only illustrate exemplary embodiments and should not be considered as limiting the scope of the embodiments, and other equally effective embodiments are acceptable.

[0016] Figure 1 is a schematic side cross-sectional view of a processing chamber according to one embodiment.

[0017] Figure 2 According to one embodiment, for Figure 1 A schematic block diagram of a control system within a processing chamber is shown.

[0018] Figure 3 is a partially schematic side cross-sectional view of a processing chamber with a process kit in a processing position according to one embodiment.

[0019] Figure 4 According to one embodiment, a treatment accessory (shown in Figure 3 ) is a partial schematic side cross-sectional view of a processing chamber.

[0020] Figure 5 According to one implementation method, Figure 3 and Figure 4 A schematic partial perspective view of a treatment assembly is shown.

[0021] Figure 6 is a schematic pictorial diagram of a graph plotting temperature versus x-position according to one embodiment.

[0022] Figure 7is a partially schematic side cross-sectional view of a processing chamber with a process kit in a processing position according to one embodiment.

[0023] Figure 8 According to one embodiment, a treatment accessory (shown in Figure 7 ) is a partial schematic side cross-sectional view of a processing chamber.

[0024] Fig. 9 is a partial schematic side cross-sectional view of an upper pad according to one embodiment.

[0025] Fig.10 is a schematic top view of a processing accessory according to one embodiment.

[0026] Fig.11 According to one implementation method, Fig.10 A schematic side view of a locking extension is shown.

[0027] Fig.12 is a schematic top plan view of a spatial configuration of process components disposed in a process chamber according to one embodiment.

[0028] Fig.13 is a partially schematic side cross-sectional view of a processing chamber with a process kit in a processing position according to one embodiment.

[0029] Fig.14 According to one implementation method, Fig.13 An enlarged cross-sectional view of a processing chamber is shown.

[0030] Fig.15 According to one embodiment, a treatment accessory (shown in Fig.13 ) is a partial schematic side cross-sectional view of a processing chamber.

[0031] Fig.16 According to one implementation method, Fig.15 An enlarged cross-sectional view of a processing chamber is shown.

[0032] Fig.17 According to one implementation method, Fig.13 A schematic top view of the deflector and cover is shown.

[0033] Fig.18 According to one implementation method, Fig.13 A schematic bottom view of the deflector and cover is shown.

[0034] Fig.19 According to one implementation method, Fig.13 A schematic top view of the deflector is shown.

[0035] Fig. 20 According to one implementation method, Fig.13 A schematic perspective view of the bottom of a deflector is shown.

[0036] Fig.21 According to one implementation method, Fig.13 A schematic top view of the cover is shown.

[0037] Fig. 22 According to one implementation method, Fig.13 A schematic perspective view of the bottom of the cover is shown.

[0038] Fig.23 is a partially schematic side cross-sectional view of a processing chamber with a process kit in a processing position according to one embodiment.

[0039] Fig.24 According to one embodiment, a treatment accessory (shown in Fig.23 ) is a partial schematic side cross-sectional view of a processing chamber.

[0040] Fig.25 According to one implementation method, Fig.23 and 24 A schematic top view of a process kit is shown.

[0041] Fig.26 According to one implementation method, Fig.23 and 24 A schematic top view of a process kit is shown.

[0042] Fig. 27 According to one implementation method, Fig.23 and 24 A schematic top view of a process kit is shown.

[0043] Fig.28 According to one implementation method, Fig.23 and 24 A schematic top view of a process kit is shown.

[0044] Fig.29 According to one implementation method, Fig.26 A schematic perspective view of the inner side of the mid-plate is shown.

[0045] Fig.30 According to one implementation method, Fig.29 A schematic cross-sectional side view of a mid-plate is shown.

[0046] Fig.31 According to one implementation method, Fig.29 A schematic cross-sectional side view of a mid-plate is shown.

[0047] Fig.32 According to one implementation method, Fig.29 A schematic cross-sectional side view of a mid-plate is shown.

[0048] Fig.33 According to one implementation method, Fig.26 A schematic side view of the mid-plate is shown.

[0049] Fig.34 is a schematic block diagram of a method for processing a substrate according to one embodiment.

[0050] Fig.35 is a partially schematic side cross-sectional view of a process chamber with a process kit according to one embodiment.

[0051] Fig.36 According to one implementation method, Fig.35 A schematic perspective view of a processing accessory is shown.

[0052] Fig.37 According to one implementation method, Fig.35 A partial schematic side cross-sectional view of a processing chamber is shown.

[0053] Fig.38 According to one implementation method, Fig.35 and 37 Schematic partial top view of the plate, flow module and gasket shown.

[0054] Fig.39 is a schematic block diagram of a method for processing a substrate according to one embodiment.

[0055] Fig.40 is a schematic side cross-sectional view of a portion of a processing chamber according to one embodiment.

[0056] Fig.41 According to one implementation method, Fig.40 Schematic enlargement of the window shown.

[0057] Fig.42 is a schematic top view of a deflector according to one embodiment.

[0058] Fig.43 is a schematic top view of a deflector according to one embodiment.

[0059] Fig.44 According to one implementation method, Fig.42 A schematic bottom perspective view of a deflector is shown.

[0060] Fig.45 According to one implementation method, Fig.43 A schematic partial side view of a deflector is shown.

[0061] Fig.46 According to one implementation method, Fig.43 A schematic partial side view of a deflector is shown.

[0062] Fig.47 According to one implementation method, Fig.42 A schematic top view of the deflector is shown.

[0063] Fig.48 is a schematic top view of a deflector according to one embodiment.

[0064] Fig.49 According to one implementation method, Fig.42 A schematic partial side view of a flow director is shown during reduced conditions in a processing chamber.

[0065] Fig.50 According to one implementation method, Fig.49 A schematic partial side view of the deflector is shown during a raised condition.

[0066] Fig.51 According to one implementation method, Fig.49 A schematic partial side view of a deflector is shown in an inclined position.

[0067] Fig.52 According to one implementation method, Fig.49 A schematic partial side view of the deflector is shown in an inclined position.

[0068] Fig.53 is a schematic block diagram of a method for processing a substrate according to one embodiment.

[0069] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation. DETAILED DESCRIPTION

[0070] The present disclosure relates to processing accessories and related methods for processing chambers to facilitate adjustability of deposition processes. One or more process gases flow through a rectangular flow port while flowing through a substrate to form one or more layers on the substrate. In one or more embodiments, the rectangular flow port is defined between a first planar inner side of a first flange and a second planar inner side of a second flange. In one or more embodiments, the deflector includes one or more openings that can be closed and opened to allow one or more cleaning gases to flow into an interior space at least partially defined by a window.

[0071] Figure 11 is a schematic side cross-sectional view of a processing chamber 100 according to one embodiment. The processing chamber 100 is a deposition chamber. In one embodiment that can be combined with other embodiments, the processing chamber 100 is an epitaxial deposition chamber. The processing chamber 100 is used to grow an epitaxial film on a substrate 102. The processing chamber 100 generates a cross-flow of a precursor across a top surface 150 of the substrate 102.

[0072] The processing chamber 100 includes an upper body 156, a lower body 148 disposed below the upper body 156, and a flow module 112 disposed between the upper body 156 and the lower body 148. The upper body 156, the flow module 112, and the lower body 148 form a chamber body. Disposed within the chamber body are a substrate support 106, an upper window 108 (e.g., an upper dome), a lower window 110 (e.g., a lower dome), a plurality of upper lamps 141, and a plurality of lower lamps 143. As shown, a controller 120 communicates with the processing chamber 100 and is used to control processes and methods, such as the operation of the methods described herein.

[0073] The substrate support 106 is disposed between the upper window 108 and the lower window 110. The substrate support 106 includes a support surface 123 that supports the substrate 102. The plurality of upper lamps 141 are disposed between the upper window and the cover 154. The plurality of upper lamps 141 form a portion of an upper lamp module 155. The cover 154 may include a plurality of sensors (not shown) disposed therein for measuring the temperature within the processing chamber 100. The plurality of lower lamps 143 are disposed between the lower window 110 and the bottom plate 152. The plurality of lower lamps 143 form a portion of a lower lamp module 145. The upper window 108 is an upper dome and is formed of an energy-transmitting material, such as quartz. The lower window 110 is a lower dome and is formed of an energy-transmitting material, such as quartz.

[0074] The processing space 136 and the purge space 138 are formed between the upper window 108 and the lower window 110. The processing space 136 and the purge space 138 are a part of an inner space at least partially defined by the upper window 108, the lower window 110, and the one or more gaskets 163.

[0075] A substrate support 106 is disposed in the interior space. The substrate support 106 includes a top surface on which the substrate 102 is disposed. The substrate support 106 is attached to a shaft 118. The shaft 118 is connected to a motion assembly 121. The motion assembly 121 includes one or more actuators and / or adjustment devices that provide movement and / or adjustment for the shaft 118 and / or the substrate support 106 within the processing space 136.

[0076] The substrate support 106 may include lift pin holes 107 disposed therein. The lift pin holes 107 may be sized to accommodate lift pins 132 that are used to lift the substrate 102 from the substrate support 106 before or after a deposition process is performed. The lift pins 132 may rest on lift pin stops 134 when the substrate support 106 is lowered from the processing position to the transfer position.

[0077] The flow module 112 includes a plurality of gas inlets 114, a plurality of purge gas inlets 164, and one or more exhaust outlets 116. The plurality of gas inlets 114 and the plurality of purge gas inlets 164 are disposed on a side of the flow module 112 opposite to the one or more exhaust outlets 116. One or more flow guides 117a, 117b are disposed below the plurality of gas inlets 114 and the plurality of exhaust outlets 116. The one or more flow guides 117a, 117b are disposed above the purge gas inlet 164. One or more gaskets 163 are disposed on the inner surface of the flow module 112 and protect the flow module 112 from the reactive gas used during the deposition operation and / or the cleaning operation. The gas inlet 114 and the purge gas inlet 164 are each positioned so that the gas flows parallel to the top surface 150 of the substrate 102 disposed in the processing space 136. The gas inlet 114 is fluidly connected to one or more processing gas sources 151 and one or more cleaning gas sources 153. The purge gas inlet 164 is fluidly connected to one or more purge gas sources 162. The one or more exhaust outlets 116 are fluidically connected to an exhaust pump 157. The one or more process gases supplied using the one or more process gas sources 151 may include one or more reactive gases (e.g., one or more of silicon (Si), phosphorus (P), and / or germanium (Ge)) and / or one or more carrier gases (e.g., one or more of nitrogen (N2) and / or hydrogen (H2)). The one or more purge gases supplied using the one or more purge gas sources 162 may include one or more inert gases (e.g., one or more of argon (Ar), helium (He), and / or nitrogen (N2)). The one or more cleaning gases supplied using the one or more cleaning gas sources 153 may include one or more of hydrogen (H) and / or chlorine (Cl). In one embodiment that may be combined with other embodiments, the one or more process gases include silicon phosphide (SiP) and / or phosphine (PH3), and the one or more cleaning gases include hydrochloric acid (HCl).

[0078] The one or more exhaust outlets 116 are further connected to or include an exhaust system 178. The exhaust system 178 fluidly connects the one or more exhaust outlets 116 and the exhaust pump 157. The exhaust system 178 can assist in controlled deposition of layers on the substrate 102. The exhaust system 178 is disposed on an opposite side of the processing chamber 100 relative to the flow module 112.

[0079] Figure 2 According to one embodiment, for Figure 1 Schematic block diagram of a control system 200 within a processing chamber 100 shown. The controller 120 is configured to receive data or input as sensor readings 502 from a plurality of sensors. For example, the sensors may include sensors that monitor the growth of a layer on the substrate 102, and / or sensors that monitor growth or residue on the inner surfaces of chamber components of the processing chamber 100 (e.g., the inner surfaces of the upper window 108 and the one or more liners 163). The controller 120 is equipped with or in communication with a system model 206 of the processing chamber 100. The system model 206 includes a heating model, a rotational position model, and a gas flow model. The system model 206 is a program configured to estimate parameters within the processing chamber 100 (e.g., gas flow rate gas pressure, rotational position of components, and heating curves) throughout a deposition operation and / or a cleaning operation. The controller 120 is further configured to store readings and calculations 204.

[0080] The readings and calculations 204 include previous sensor readings 202, such as any previous sensor readings within the process chamber 100. The readings and calculations 204 further include stored calculation values ​​from after the sensor readings 202 were measured by the controller 120 and run through the system model 206. Thus, the controller 120 is configured to both retrieve the stored readings and calculations 204 and save the readings and calculations 204 for future use. Maintaining previous readings and calculations enables the controller 120 to adjust the system model 206 over time to reflect a more accurate version of the process chamber 100.

[0081] The controller 120 includes a central processing unit (CPU), a memory containing instructions, and support circuits for the CPU. The controller 120 controls various items directly or via other computers and / or controllers. In one or more embodiments, the controller 120 is communicatively coupled to a dedicated controller, and the controller 120 acts as a central controller.

[0082] The controller 120 is any form of general purpose computer processor used in industrial environments to control various substrate processing chambers and equipment, as well as sub-processors thereon or therein. The memory, or non-transitory computer readable medium, is one or more readily available memories, such as random access memory (RAM), dynamic random access memory (DRAM), static RAM (SRAM) and synchronous dynamic RAM (SDRAM (such as DDR1, DDR2, DDR3, DDR3L, LPDDR3, DDR4, LPDDR4 and the like)), read-only memory (ROM), floppy disk, hard disk, flash drive, or any other form of local or remote digital storage. The support circuits of the controller 120 are coupled to the CPU to support the CPU (processor). The support circuits include cache, power supply, clock circuits, input / output circuit systems and subsystems, etc. The operating parameters (pressure of the process gas, flow rate of the process gas and / or rotational position of the process accessories) and operations are stored in the memory as software routines, which are executed or called to turn the controller 120 into a dedicated controller to control the operation of the various chambers / modules described herein. The controller 120 is configured to perform any of the operations described herein. The instructions stored on the memory, when executed, cause one or more operations of the method 3400 (described below) to be performed.

[0083] Various operations described herein (eg, operations of method 3400 ) may be performed automatically using controller 120 , or may be performed automatically or manually with certain operations performed by a user.

[0084] In one or more embodiments, the controller 120 includes a mass storage device, an input control unit, and a display unit (not shown). The controller 120 monitors the flow of process gases and purge gases. In one or more embodiments, the controller 120 includes multiple controllers 120, so that the stored readings and calculations 204 and the system model 206 are stored in a controller that operates the process chamber 100 separate from the controller 120. In one or more embodiments, all of the system models 206 and stored readings and calculations 204 are saved in the controller 120.

[0085] The controller 120 is configured to control the rotational position, heating, and gas flow through the processing chamber 100 by providing outputs to the controls 208 for the lamps, gas flow, and motion assembly 121. The controls 208 include controls for the upper lamps 141, the lower lamps 143, the process gas source 151, the purge gas source 162, the motion assembly 121, and the exhaust pump 157.

[0086] The controller 120 is configured to adjust the output to the control 208 based on the sensor readings 202, the system model 206, and the stored readings and calculations 204. The controller 120 includes embedded software and compensation algorithms to calibrate the measurements. The controller 120 may include one or more machine learning algorithms and / or artificial intelligence algorithms for estimating optimized parameters for the deposition operation and / or the cleaning operation. The one or more machine learning algorithms and / or artificial intelligence algorithms may use, for example, a regression model (e.g., a linear regression model) or a clustering technique to estimate the optimized parameters. The algorithm may be unsupervised or supervised.

[0087] Figure 3 FIG. 1 is a schematic side cross-sectional view of a portion of a processing chamber 300 with a processing accessory 310 in a processing position according to one embodiment. Figure 1 The illustrated processing chamber 100 is similar and includes one or more of its aspects, features, components, properties and / or operations.

[0088] The process accessory 310 is disposed in the process space 136 of the inner space of the process chamber 300. The process accessory 310 includes a flow guide 320. The flow guide 320 includes a middle plate 321 disposed between the support surface 123 and the upper lamp 141. Figure 3 310 (described below). The processing chamber 300 includes a lower liner 311 and an upper liner 312, the lower liner being at least partially arranged below the substrate support 106 and the upper liner being at least partially arranged above the substrate support 106. The preheat ring 302 is disposed outside the substrate support 106. The preheat ring 302 is supported on a lug of the lower liner 311. The stopper 304 includes a plurality of arms 305a, 305b, each arm including a lift pin stopper on which the lift pin 132 can rest when lowered.

[0089] exist Figure 3 In the processing position shown, the processing assembly 310 is in the lower position. In the processing position, the middle plate 321 is supported (e.g., rests) on the ledge 313 of the upper liner 312. In the processing position, the middle plate 321 effectively seals the lower portion 136a of the processing volume 136 relative to the upper portion 136b of the processing volume 136. In one embodiment that can be combined with other embodiments, in the processing position, the flanges 331, 332 (described below) are partially supported on the substrate support 106 and partially supported on the preheat ring 302. In this embodiment, raising the substrate support 106 can lift the processing assembly 310 from the preheat ring 302.

[0090] While the lamps 141, 143 heat the preheat ring 302 and the substrate 102, one or more process gases P1 flow from the process gas inlet into the lower portion 136a and flow through the substrate 102 to form (e.g., epitaxially grow) one or more layers on the substrate 102. After flowing through the substrate 102, the one or more process gases P1 flow out of the inner space through the one or more exhaust outlets 116.

[0091] Figure 4 According to one embodiment, a treatment accessory 310 (shown in FIG. Figure 3 ) is a partially schematic side cross-sectional view of the processing chamber 300. Figure 4 In, relative to Figure 3 The processing position is shown, and the cleaning position is the raised position.

[0092] exist Figure 4 In the cleaning position, the substrate 102 has been removed from the interior space of the processing chamber 300. Using the raising of the substrate support 106, the processing accessory 310 has been raised so that the middle plate 321 is raised to have a gap with the lug 313 of the upper liner 312 at the first side 322 and the second side 323. The gap herein may also be referred to as an opening. One or more cleaning gases C1 are supplied to the processing space 136 through the gas inlet 114. At least a portion of the one or more cleaning gases C1 flows through the gap between the middle plate 321 and the lug 313 and flows into the upper part 136b. The one or more cleaning gases C1 flowing into the upper part 136b are conducive to cleaning the inner surface of the processing chamber 300 (e.g., the inner surface of the upper liner 312 and the upper window 108), and the surface of the middle plate 321 facing the upper window 108. The one or more cleaning gases C1 will clean the space between the middle plate 321 and the upper window 108 (e.g., the upper part 136b). The one or more cleaning gases C1 flow through the upper portion 136 b , flow through gaps at opposite sides of the process chamber 300 , and flow out of the inner space through the one or more exhaust outlets 116 .

[0093] Figure 5 According to one implementation method, Figure 3 and 4 A schematic partial perspective view of a treatment assembly 310 is shown.

[0094] The middle plate 321 has a first side 322 (which is Figure 3 and 4 The first side 322 and the second side 323 are adjacent to the gas inlet 114 in the first direction D1 and opposite to the first side 322. Each of the first side 322 and the second side 323 is arc-shaped.

[0095] The processing accessory 310 includes a first flange 331 and a second flange 332, wherein the first flange extends outward relative to the third side 324 of the middle plate 321 and extends outward relative to the outer side surface 345 of the middle plate 321, and the second flange extends outward relative to the fourth side 325 of the middle plate 321 and extends outward relative to the outer side surface 345 of the middle plate 321. The fourth side 325 is opposite to the third side 324 along a second direction D2, and the second direction intersects with the first direction D1. In one or more embodiments, the second direction D2 is perpendicular to the first direction D1. The third side 324 and the fourth side 325 are linear. Figure 3 and 4 , the first flange 331 and the second flange 332 are at least partially supported on the substrate support 106, so that the raising and lowering of the substrate support 106 raises and lowers the processing accessory 310. The rectangular flow port 350 is defined between the first planar inner side 333 of the first flange 331 and the second planar inner side 334 of the second flange 332. The shape of each of the first flange 331 and the second flange 332 is semicircular. In one embodiment that can be combined with other embodiments, the middle plate 231 is formed of quartz, and the first flange 331 and the second flange 332 are each formed of silicon carbide (SiC). The rectangular flow port 350 has a 3D rectangular box shape, so that the rectangular flow port 350 has a rectangular shape in each of the XY plane, the XZ plane, and the YZ plane. When the processing assembly 310 is in the processing position, the rectangular flow orifice 350 is defined by one or more of the first planar inner side 333 , the second planar inner side 334 , the upper surface of the substrate 102 , the upper surface of the substrate support 106 , and / or the upper surface of the preheat ring 302 .

[0096] The one or more process gases P1 flow through the rectangular flow ports 350 as they flow through the lower portion 136a and through the substrate 102. The rectangular flow ports 350 facilitate adjustability (e.g., pressure and flow rate) of the process gas and the cleaning gas to facilitate process uniformity and deposition uniformity while providing a path for the cleaning gas to the upper portion 136b. As an example, the rectangular flow ports 350 facilitate the use of high pressure and low flow rate for the process gas and the cleaning gas. The rectangular flow ports 350 also facilitate mitigating the effects of rotation of the substrate 102 on process uniformity and film thickness uniformity during deposition operations. As an example, the rectangular flow ports mitigate or remove the effects of gas vortices.

[0097] Figure 6 is a schematic diagram of a graph 600 that plots temperature versus x-position, according to one embodiment. The temperature represents the temperature of the substrate support 106 taken at various x-positions. The x-positions are taken along a diameter of the substrate support 106.

[0098] For the first curve 601, the process accessory 310 is not included in the process chamber. For the second curve 602, the process accessory 310 is included in the process chamber. As shown by the second curve 602, process uniformity and mitigation of the effects of substrate rotation allow the substrate support 106 to exhibit a higher temperature, facilitating the use of lower heating lamp power levels. Using lower power levels is beneficial in reducing costs and improving operating efficiency.

[0099] Figure 7 is a schematic side cross-sectional view of a portion of a processing chamber 700 with a processing assembly 310 in a processing position according to one embodiment. Figure 3 The illustrated processing chamber 300 is similar and includes one or more of its aspects, features, components, properties and / or operations.

[0100] exist Figure 7 The processing position is an elevated position. The processing chamber 700 includes an upper liner 712. The upper liner 712 is connected to Figure 3 The illustrated upper liner 312 is similar and includes one or more of its aspects, features, components, properties and / or operations.

[0101] The lugs 313 are omitted from the upper pad 712 so that the middle plate 321 can be lowered downwardly, past the upper pad 712. The middle plate 321 is free floating relative to the upper pad 712.

[0102] Figure 8 According to one embodiment, a treatment accessory 310 (shown in FIG. Figure 7 ) is a partially schematic side cross-sectional view of the processing chamber 700. Figure 8 In, relative to Figure 7 The processing position is shown, the cleaning position is the lowered position.

[0103] exist Figure 4 In the cleaning position, the substrate 102 has been removed from the inner space of the processing chamber 300. With the lowering of the substrate support 106, the processing kit 310 has been lowered so that the middle plate 321 is lowered to have a gap with the upper liner 712. One or more cleaning gases C1 are supplied into the processing space 136 through the gas inlet 114. At least a portion of the one or more cleaning gases C1 flows through the gap between the middle plate 321 and the upper liner 712 and flows into the upper portion 136b.

[0104] Fig. 9 is a partial schematic side cross-sectional view of an upper liner 312 according to one embodiment.

[0105] Fig.103 is a schematic top view of a treatment accessory 310 according to one embodiment. The treatment accessory 310 includes a plurality of locking extensions 1001 extending outwardly relative to the mid-plate 321. The locking extensions 1001 are attached to the mid-plate 321 or formed integrally with the mid-plate 321. The locking extensions 1001 extend from a first side 322 and a second side 323. The present disclosure contemplates that the locking extensions 1001 can extend from a top surface of the mid-plate 321.

[0106] exist Fig. 9 In the illustrated embodiment, the upper pad 312 includes two layers of locking stop structures 910a, 910b facing inward. Each locking extension 1001 may include a set of locking stop structures 910a, 910b (e.g., Fig.10 In one embodiment that can be combined with other embodiments, the upper pad 312 includes four sets of locking and stopping structures 910A, 910B (as shown in FIG. Fig.10 The inner locking stop structure 910a prevents the treatment accessory 310 from rotating when the treatment accessory 310 is in the lower position by providing a stop for the flanges 331, 332.

[0107] The two outer locking stop structures 910a define a first radial boundary and a second radial boundary between which the corresponding locking extension 1001 can move along the rotation path by a rotation angle A1. When the treatment accessory is in the upper position, the treatment accessory 310 can be rotated up to an angle of rotation A1 so that the flanges 331, 332 pass over the inner locking stop structure 910b (such as Fig. 9 310). The process assembly 310 can be rotated while in the raised position, for example, before lowering the process assembly 310 so that the midplate 321 is supported on a component (e.g., the upper liner 312). The rotation of the process assembly 310 can be used to adjust the orientation of the rectangular flow ports 350 between deposition operations and / or between cleaning operations, which can promote gas adjustability and uniformity of deposition and / or cleaning.

[0108] The inner and outer lock-stop structures 910 a , 910 b may be disposed in corresponding channels formed in the inner side of the upper pad 312 .

[0109] Each of the first and second flanges 331, 332 may include a respective raised section 335, 336 that interfaces with the substrate support 106. In one embodiment that may be combined with other embodiments, the substrate support 106 is raised and interfaces with the raised sections 335, 336 to lift the outer sections 337, 338 of the first and second flanges 331, 332 off the preheat ring 302.

[0110] Fig.11According to one implementation method, Fig.10 A schematic side view of locking extension 1001 is shown.

[0111] Fig.12 is a schematic top plan view of a spatial arrangement of process components 310 disposed in a process chamber 300 according to one embodiment.

[0112] The outer diameter OD1 of the middle plate 321 is equal to or smaller than the inner diameter ID1 of the upper liner 312. The inner diameter ID2 between the inner edges of the flanges 331, 332 is smaller than the outer diameter OD2 of the substrate support 106. The outer diameter OD3 between the outer edges of the flanges 331, 332 is larger than the inner diameter ID3 of the preheat ring 302.

[0113] Fig.13 is a partially schematic side cross-sectional view of a processing chamber 1300 with a processing kit 1310 in a processing position according to one embodiment.

[0114] Fig.14 According to one implementation method, Fig.13 An enlarged cross-sectional view of processing chamber 1300 is shown. Fig.14 The cross-sectional view is taken along Fig.13 The cross-sectional views shown are taken at different radial angles.

[0115] The processing chamber 1300 and Figure 3 The illustrated processing chamber 300 is similar and includes one or more of its aspects, features, components, properties and / or operations. Figure 3 The illustrated treatment assembly 310 is similar and includes one or more of its aspects, features, components, properties and / or operations.

[0116] The processing assembly 1310 includes a deflector 1320 and a cover 1350. Fig.13 and 14 136a, the cover 1350 is in a lowered position to effectively seal the upper portion 136b relative to the lower portion 136a of the processing volume 136. The lugs 313 are omitted from the upper liner 712 so that the middle plate 321 can be lowered downwardly, passing the upper liner 712. The middle plate 321 is free floating relative to the upper liner 712. The flanges 1331, 1332 (described below) of the deflector 1320 are supported on the preheat ring 302. The cover 1350 includes protrusions 1354, 1355 (discussed below) that extend into the openings 1325, 1326 (discussed below) of the deflector 1320.

[0117] Lifting the substrate support 106 engages the substrate support 106 with the protrusions 1354 , 1355 to raise the cover 1350 relative to the flow director 1320 .

[0118] Fig.15 According to one embodiment, a processing accessory 1310 (shown in FIG. Fig.13 13. A partially schematic side cross-sectional view of the processing chamber 1300 of FIG. 13.

[0119] exist Fig.15 In, relative to Fig.13 The processing position is shown, and the cleaning position is the raised position.

[0120] Fig.16 According to one implementation method, Fig.15 An enlarged cross-sectional view of processing chamber 1300 is shown. Fig.16 The cross-sectional view is taken along Fig.15 The cross-sectional views shown are taken at different radial angles.

[0121] exist Fig.15 and 16 , the substrate 102 has been removed from the processing chamber 1300, and the lid 1350 has been lifted to a raised position to open one or more gaps between the lid 1350 and the flow director 1320. The one or more cleaning gases C1 flow through the one or more gaps, flow through the one or more first openings 1356 of the lid 1350, and flow into the upper portion 136b of the processing space 136. The cleaning gas C1 flows through the one or more second openings 1357 of the lid 1350, flows through the one or more gaps between the lid 1350 and the flow director 1320, and is exhausted from the processing chamber 1300.

[0122] exist Fig.15 and 16 In the cleaning position, the substrate 102 has been removed from the inner space of the processing chamber 300. With the lowering of the substrate support 106, the processing kit 310 has been lowered so that the middle plate 321 is lowered to have a gap with the upper liner 712. One or more cleaning gases C1 are supplied into the processing space 136 through the gas inlet 114. At least a portion of the one or more cleaning gases C1 flows through the gap between the middle plate 321 and the upper liner 712 and flows into the upper portion 136b.

[0123] Fig.17 According to one implementation method, Fig.13 A schematic top view of the deflector 1320 and cover 1350 is shown.

[0124] Fig.18 According to one implementation method, Fig.13 A schematic bottom view of the deflector 1320 and cover 1350 is shown.

[0125] Fig.19According to one implementation method, Fig.13 A schematic top view of the deflector 1320 is shown.

[0126] Fig. 20 According to one implementation method, Fig.13 A schematic perspective view of the bottom of the deflector 1320 is shown.

[0127] The deflector 1320 includes a middle plate 1321 having a first side 1322 and a second side 1323 opposite to the first side 1322 along a first direction. The first side 1322 and the second side 1323 are arc-shaped. The deflector 1320 includes a first flange 1331 and a second flange 1332, the first flange extending outward relative to a third side 1327 of the middle plate 1321 and extending outward relative to an outer side surface 1345 of the middle plate 1321, and the second flange extending outward relative to a fourth side 1328 of the middle plate 1321 and extending outward relative to the outer side surface 1345 of the middle plate 1321. The fourth side 1328 is opposite to the third side 1327 along a second direction, the second direction intersecting the first direction. In one or more embodiments, the second direction is perpendicular to the first direction. The rectangular flow opening 1381 is defined between a first planar inner side 1333 of the first flange 1331 and a second planar inner side 1334 of the second flange 1332 .

[0128] The deflector 1320 includes a first edge section 1335 extending between the third side 1327 of the middle plate 1321 and the first flange 1331, and a second edge section 1336 extending between the fourth side 1328 of the middle plate 1321 and the second flange 1332. The shape of each of the first edge section 1335 and the second edge section 1336 is a rectangle. The deflector 1320 includes a first opening 1325 formed between the first flange 1331 and the first edge section 1335, and a second opening formed between the second flange 1332 and the second edge section 1336.

[0129] Fig.21 According to one implementation method, Fig.13 A schematic top view of cover 1350 is shown.

[0130] Fig. 22 According to one implementation method, Fig.13 A schematic perspective view of the bottom of cover 1350 is shown.

[0131] The cover 1350 includes a ring 1351 from which a first protrusion 1354 extends and is configured to extend into the first opening 1325 of the deflector 1320. The cover 1350 includes a second protrusion 1355 extending from the ring 1351 and configured to extend into the second opening 1326 of the deflector 1320.

[0132] The first protrusion 1354 and the second protrusion 1355 are respectively slidable in the first opening 1325 and the second opening 1326 of the deflector 1320. The shape of each of the first opening 1325, the second opening 1326, the first protrusion 1354, and the second protrusion 1355 is semicircular.

[0133] Fig.23 is a partially schematic side cross-sectional view of a processing chamber 2300 with a processing kit 2310 in a processing position according to one embodiment.

[0134] Processing chamber 2300 and Figure 3 The illustrated processing chamber 300 is similar and includes one or more of its aspects, features, components, properties and / or operations. Figure 3 The illustrated treatment assembly 310 is similar and includes one or more of its aspects, features, components, properties and / or operations.

[0135] exist Fig.23 In the illustrated embodiment, the flanges 331, 332 can move upward and downward relative to the middle plate 321, which is supported on the lugs 313 of the upper pad 312. Fig.23 In the illustrated embodiment, one or more first openings 2351 are formed in the middle plate 321 adjacent to the first side 322 , and one or more second openings 2352 are formed in the middle plate 321 adjacent to the second side 323 .

[0136] The processing accessory 2310 includes a cover 2320, which is configured to Fig.23 In the illustrated processing position, the one or more first openings 2351 and the one or more second openings 2352 are covered. The cover 2320 includes a ring having a width W1 greater than a major diameter MD1 of each of the one or more first openings 2351 and the one or more second openings 2352.

[0137] Resting the cover 2320 on the middle plate 321 in the processing position seals the openings 2351, 2352 to seal the upper portion 136b of the processing volume 136 relative to the lower portion 136a.

[0138] The lid 2320 is supported on the raised sections 335 of the first flange 331 and the raised sections 336 of the second flange 332. Raising and lowering of the substrate support 306 raises and lowers the flanges 331, 332, which in turn raises and lowers the lid 2320 using the interface between the raised sections 335, 3365 and the lid 2320.

[0139] Fig.24 According to one embodiment, a processing accessory 2310 (shown in FIG. Fig.23 23. A partially schematic side cross-sectional view of the processing chamber 2300 of FIG. 23.

[0140] exist Fig.24 In, relative to Fig.23 The processing position is shown, and the cleaning position is the raised position.

[0141] exist Fig.24 , the substrate has been removed from the processing chamber 1300, and the lid 2320 has been lifted to a raised position to open the openings 2351, 2352 of the middle plate 321. One or more cleaning gases C1 flow through the one or more first openings 2351 and flow into the upper portion 136b of the processing space 136. The cleaning gas C1 flows through the one or more second openings 2352 and the guide 1320 and is exhausted from the processing chamber 2300.

[0142] Fig.25 According to one implementation method, Fig.23 and 24 The inner side (eg, bottom side) of the middle plate 321 (which faces the substrate support 106 and the substrate 102) may be planar, such as Figure 3 shown.

[0143] Fig.26 According to one implementation method, Fig.23 and 24 A schematic top view of the processing accessory 2310 is shown. Fig.26 In the illustrated embodiment, the inner side of the mid-plate 321 includes a plurality of fins 2610 extending along a length L1 of the mid-plate 321. The length L1 extends between the first side 322 and the second side 323. Fig.25 In the embodiment shown, the length L1 corresponds to the diameter of the middle plate 321. Fig.26 In the illustrated embodiment, the first side 322 and the second side 323 of the mid-plate 321 are linear (rather than arcuate), such that the length L1 is the length of the rectangular shape.

[0144] Fig. 27 According to one implementation method, Fig.23 and 24A schematic top view of the processing accessory 2310 is shown. Fig. 27 In the illustrated embodiment, the inner side of the middle plate 321 includes a plurality of fins 2710. The length L2 of each of the fins 271 is less than the length L1 of the middle plate 321. Fig. 27 In the illustrated embodiment, length L2 is approximately 50% of length L1 .

[0145] Fig.28 According to one implementation method, Fig.23 and 24 A schematic top view of the processing accessory 2310 is shown. Fig.28 In the illustrated embodiment, the inner side of the middle plate 321 includes a plurality of fins 2810. The length L2 of each of the fins 271 is less than the length L1 of the middle plate 321. Fig.28 In the illustrated embodiment, length L2 is approximately 30% of length L1 .

[0146] Fig.29 According to one implementation method, Fig.26 A schematic perspective view of the inner side of the middle plate 321 is shown. Fig.29 As shown, the one or more process gases P1 flow through the flow paths between the fins 2610 .

[0147] Fig.30 According to one implementation method, Fig.29 A schematic cross-sectional side view of the middle plate 321 is shown. Fig.29 and 30 As shown, fin 2610 has a planar edge 2611 .

[0148] Fig.31 According to one implementation method, Fig.29 A schematic cross-sectional side view of the middle plate 321 is shown. Fig.31 As shown, the fin 3110 has a curved edge 3111 .

[0149] Fig.32 According to one implementation method, Fig.29 A schematic cross-sectional side view of the middle plate 321 is shown. Fig.32 As shown, the fins 3210 have patterned edges 3211 such that each fin 3210 includes a plurality of arcs along a length L1.

[0150] Fig.33 According to one implementation method, Fig.26 A schematic side view of the middle plate 321 is shown. Fig.33In the illustrated embodiment, the fins 2610 are omitted and the mid-plate 321 includes a pair of support legs 3310, 3311. The support legs 3310, 3311 may be supported on one or more of the flanges 331, 332, the substrate support 106, the upper liner 312, and / or the preheat ring 302.

[0151] Fig.34 is a schematic block diagram of a method 3400 for processing a substrate according to one embodiment.

[0152] Operation 3402 includes the step of heating a substrate positioned on a substrate support.

[0153] Operation 3404 includes the steps of flowing one or more process gases through the substrate to form one or more layers on the substrate. The step of flowing the one or more process gases through the substrate includes the steps of directing the one or more process gases through a rectangular flow port of a process accessory. In one embodiment that may be combined with other embodiments, the supply pressure of the one or more process gases is 300 Torr or greater, for example, in the range of 300 Torr to 600 Torr. In one embodiment that may be combined with other embodiments, the supply flow rate of the one or more process gases is less than 5000 standard cubic centimeters per minute (SCCM). In one embodiment that may be combined with other embodiments, the substrate is rotated at a speed of less than 8 revolutions per minute (RPM) during the period when the one or more process gases are flowing through the substrate. In one example that may be combined with other examples, the speed is 1 RPM.

[0154] Operation 3405 includes the step of exhausting the one or more process gases through an exhaust path at least partially formed in the sidewall.

[0155] Operation 3406 includes the steps of: after exhausting the one or more process gases, moving at least a portion of the process accessory to open the one or more first openings and the one or more second openings. The distance that the at least a portion of the process accessory is moved is less than 20 mm, for example 10 mm. In one or more embodiments, the moving includes lifting or lowering the at least a portion of the process accessory. In one embodiment that may be combined with other embodiments, the step of moving the at least a portion of the process accessory includes the steps of: while the middle plate of the deflector is supported on the preheat ring, lifting the cover so that one or more protrusions of the cover slide relative to the middle plate. In one embodiment that may be combined with other embodiments, the step of moving the at least a portion of the process accessory includes the steps of: lifting the cover. The cover includes a ring having a width greater than a major diameter of each of the one or more first openings and the one or more second openings. In one embodiment that may be combined with other embodiments, the step of moving the at least a portion of the process accessory includes the steps of: lifting or lowering the middle plate by moving two flanges coupled to the middle plate of the deflector using a substrate support.

[0156] Operation 3408 includes the step of flowing one or more cleaning gases through the one or more first openings and into the area between the process assembly and the window.

[0157] Operation 3410 includes the step of flowing the one or more cleaning gases through the region and into the one or more second openings.

[0158] Operation 3412 includes the step of exhausting the one or more cleaning gases through an exhaust path after the step of flowing the one or more cleaning gases into the one or more second openings.

[0159] Operation 3414 includes the following steps: rotating the treatment accessory at a rotation angle greater than 0 degrees and less than 90 degrees. The treatment accessory can be rotated, for example, when the treatment accessory is in the cleaning position for operations 3408, 3410. In one embodiment that can be combined with other embodiments, the rotation angle is in the range of 15 degrees to 30 degrees.

[0160] The method 3400 may also include the step of flowing one or more purge gases into the processing chamber. The one or more purge gases may flow into the processing chamber before, during, and / or after one or more of operations 3404, 3405, 3408, 3410, and / or 3412. The one or more purge gases may flow into a slit valve of the processing chamber, the lower portion 136a of the processing volume, the upper portion 136b of the processing volume 136, any other portion of the processing volume 136, and / or the purge volume 138.

[0161] Fig.35 FIG. 1 is a schematic side cross-sectional view of a portion of a processing chamber 3500 having a processing assembly 3510 according to one embodiment. Figure 3 The processing chamber 3500 is similar to the processing chamber 300 shown and includes one or more of its aspects, features, components, properties and / or operations. Fig.35 is shown as being in the processing condition.

[0162] The process accessory 3510 includes a plate 3511 having a first face 3512 and a second face 3513 opposite to the first face 3512. The second face 3513 faces the substrate support 106. The process accessory 3510 includes a gasket 3520. The gasket 3520 includes an annular section 3521 and one or more lugs 3522 extending inwardly relative to the annular section 3521. The one or more lugs 3522 are configured to support one or more outer regions of the second face 3513 of the plate 3511. The gasket 3520 includes one or more inlet openings 3523 extending to an inner surface 3524 of the annular section 3521 on a first side of the gasket 3520 and one or more outlet openings 3525 extending to an inner surface 3524 of the annular section 3521 on a second side of the gasket 3520.

[0163] The one or more inlet openings 3523 extend from the outer surface 3526 of the annular section 3521 of the liner 3520 to the inner surface 3524. The one or more outlet openings 3525 extend from the lower surface 3529 of the liner 3520 to the inner surface 3524. The liner 3520 includes a first extension portion 3527 and a second extension portion 3528 disposed outside the lower surface 3529 of the liner 3520. At least a portion of the annular section 3521 of the liner 3520 is aligned with the first extension portion 3527 and the second extension portion 3528. Fig.35 In the illustrated embodiment, the lowermost end of the plate 3511 is arranged above the lowermost end of the pad 3520. Fig.35 In the illustrated embodiment, the lowermost end of the plate 3511 is part of the second surface 3513 and the lowermost end of the pad 3520 is part of the first extension 3527 and / or the second extension 3528. The present disclosure contemplates that the lowermost end of the pad 3520 can be part of the lower surface 3529.

[0164] The plate 3511 is in the shape of a disk, and the annular section 3521 is in the shape of an annulus. The plate 3511 may be in the shape of a rectangle. In one or more embodiments, the one or more lugs 3522 include a single lug in the shape of an annulus. In one or more embodiments, the one or more lugs 3522 include two lugs that are opposite to each other and are in the shape of an arc segment.

[0165] The flow module 112 (which may be at least a portion of a sidewall of the processing chamber 3500) includes one or more first inlet openings 3514 in fluid communication with the lower portion 136a of the processing volume 136. The flow module 112 includes one or more second inlet openings 3515 in fluid communication with the upper portion 136b of the processing volume 136. The one or more first inlet openings 3514 are connected to the liner 3520 ( Fig.35 The one or more flow gaps between the upper liner in the embodiment of the present invention and the lower liner 311 are in fluid communication. The one or more second inlet openings 3515 are in fluid communication with the one or more inlet openings 3523 of the liner 3520.

[0166] exist Fig.35 and 37 In the illustrated embodiment, the orientation of the one or more inlet openings 3523 is a horizontal orientation and the orientation of the one or more outlet openings 3525 is an inclined orientation. The present disclosure contemplates that the orientation of the one or more inlet openings 3523 and / or outlet openings 3525 may be a horizontal orientation, an inclined orientation, and / or may include one or more turns (such as the turns shown for the one or more first inlet openings 3514 and the one or more exhaust outlets 116).

[0167] During a deposition operation (e.g., an epitaxial growth operation), the one or more process gases P1 flow through the one or more first inlet openings 3514, flow through the one or more gaps, and flow into the lower portion 136a of the processing space 136 to flow through the substrate 102. During a deposition operation, the one or more purge gases P2 flow through the one or more second inlet openings 3515, flow through the one or more inlet openings 3523 of the liner 3520, and flow into the upper portion 136b of the processing space 136. The one or more purge gases P2 flow simultaneously with the flow of the one or more process gases P1. The one or more purge gases P2 flow through the upper portion 136b, which helps to reduce or prevent the one or more process gases P1 from flowing into the upper portion 136b and contaminating the upper portion 136b. The one or more process gases P1 are exhausted through the gap between the liner 3520 and the lower liner 311, and are exhausted through the one or more exhaust outlets 116. The one or more purge gases P2 are exhausted through the one or more outlet openings 3525, exhausted through the same gap between the liner 3520 and the lower liner 311 as the one or more process gases P1, and exhausted through the same one or more exhaust outlets 116 as the one or more process gases P1. The present disclosure contemplates that the one or more purge gases P2 may be exhausted separately through one or more second exhaust outlets separate from the one or more exhaust outlets 116.

[0168] The present disclosure also contemplates that one or more purge gases may be supplied to the purge volume 138 (through the plurality of purge gas inlets 164 ) and exhausted from the purge volume 138 during deposition operations.

[0169] Fig.36 According to one implementation method, Fig.35 A schematic perspective view of a processing assembly 3510 is shown.

[0170] Fig.37 According to one implementation method, Fig.35 A schematic side cross-sectional view of a portion of the processing chamber 3500 is shown. Fig.37 is shown in clean condition.

[0171] During a cleaning operation, one or more cleaning gases C1 flow through the one or more first inlet openings 3514, through the one or more gaps (which are between the liner 3520 and the lower liner 311), and flow into the lower portion 136a of the processing space 136. During a cleaning operation, one or more cleaning gases C2 flow through the one or more second inlet openings 3515, through the one or more inlet openings 3523 of the liner 3520, and flow into the upper portion 136b of the processing space 136. The one or more cleaning gases C2 flow simultaneously with the flow of the one or more cleaning gases C1. The present disclosure contemplates that the one or more cleaning gases C2 used to clean the surface adjacent to the upper portion 136b can be the same or different from the one or more cleaning gases C1 used to clean the surface adjacent to the lower portion 136a of the processing space 136.

[0172] The processing chamber 3500 facilitates separation of the gases provided to the lower portion 136a from the gases provided to the upper portion 136b, which facilitates the adjustability of the parameters. In addition, one or more purge gases and one or more cleaning gases can be provided separately to the upper portion 136b to facilitate reducing contamination of the window 108 and / or the plate 3511.

[0173] like Fig.35 and 37 As shown, the one or more second inlet openings 3515 may be arranged above the one or more first inlet openings 3514, and the one or more inlet openings 3523 of the liner 3520 may be arranged above the one or more gaps between the liner 3520 and the lower liner 311. Fig.38 As shown, the one or more second inlet openings 3515 may be angularly offset from the one or more first inlet openings 3514 , and the one or more inlet openings 3523 of the liner 3520 may be angularly offset from the one or more gaps between the liner 3520 and the lower liner 311 .

[0174] Gas flows in the lower portion 136a and the upper portion 136b during both deposition operations and cleaning operations, which helps to reduce or eliminate gas backflow at the one or more outlet openings 3525 (for example, backflow from the one or more outlet openings 3525 into the upper portion 136b) and the one or more exhaust outlets 116 (for example, backflow from the gap into the lower portion 136a).

[0175] Fig.38 According to one implementation method, Fig.35 and 37 A schematic partial top view of the plate 3511, flow module 112 and gasket 3520 is shown. Fig.38In the illustrated embodiment, the one or more second inlet openings 3515 are angularly offset from the one or more first inlet openings 3514 along a circumference of the processing chamber 3500 (eg, a circumference 3801 of the flow module 112).

[0176] The one or more inlet openings 3523 of the liner 3520 may be angularly offset from the one or more gaps between the liner 3520 and the lower liner 311 along the circumference of the chamber (eg, circumference 3801 of the liner 3520 ).

[0177] Fig.39 is a schematic block diagram of a method 3900 for processing a substrate according to one embodiment.

[0178] Operation 3901 of method 3900 includes heating a substrate positioned on a substrate support in a chamber.

[0179] Operation 3903 includes the steps of flowing one or more process gases through the substrate to form one or more layers on the substrate. The one or more process gases flow through one or more first inlet openings in fluid communication with the lower portion of the processing space. The step of flowing the one or more process gases through the substrate includes the steps of directing the one or more process gases between a plate and the substrate. The plate is supported on a pad to divide the processing space into a lower portion and an upper portion. Operation 3903 includes the steps of flowing one or more purge gases through the upper portion simultaneously with the step of flowing the one or more process gases through the substrate. The one or more purge gases flow through one or more second inlet openings in fluid communication with the upper portion of the processing space.

[0180] Operation 3905 includes the step of exhausting the one or more process gases.

[0181] Operation 3907 includes the steps of flowing one or more cleaning gases through an upper portion between the plate and the window while the plate is supported on the pad. Operation 3907 includes the steps of flowing one or more cleaning gases through a lower portion of the processing volume simultaneously with the step of flowing the one or more cleaning gases through the upper portion.

[0182] Operation 3909 includes the step of exhausting the one or more cleaning gases from the upper portion and the lower portion of the processing volume.

[0183] Fig.40 FIG. 4 is a schematic side cross-sectional view of a portion of a processing chamber 4000 according to one embodiment. Fig.35 and 37The illustrated processing chamber 3500 is similar and includes one or more of its aspects, features, components, properties and / or operations. Fig.40 is shown as being in the processing condition.

[0184] The processing chamber 4000 includes a window 4008 that at least partially defines the processing volume 136. The window 4008 includes a first surface 4011 that is concave or flat (in Fig.40 In the illustrated embodiment, the first face 4011 is flat. The window 4008 includes a second face 4012 that is convex. The second face 4012 faces the substrate support 106.

[0185] The processing kit in the processing chamber 4000 includes a liner 4020. The liner 4020 and Fig.35 and 37 The illustrated pad 3520 is similar and includes one or more of its aspects, features, components, properties and / or operations.

[0186] The window 4008 includes an inner section 4013 and an outer section 4014. The first face 4011 and the second face 4012 are at least a portion of the inner section 4013. The inner section 4013 is transparent, and the outer section 4014 is opaque. The outer section 4014 is at least partially received in one or more side walls of the processing chamber 4000 (e.g., in the flow module 112).

[0187] Fig.41 According to one implementation method, Fig.40 Schematic enlarged view of the window 4008 shown. The second surface 4012 of the window 4008 includes one or more portions, each of which has a radius of curvature R1 that is at least 1.5 times greater than the width W1 of the inner section 4013. In one or more embodiments, the radius of curvature R1 is at least 2.0 times greater than the width W1. The second surface 4012 has an arc angle A1 that is less than 25 degrees. In one or more embodiments, the arc angle A1 is 20 degrees or less, such as 15 degrees or 20 degrees. In one or more embodiments, the arc angle A1 is 6.0 degrees or less. In one or more examples of such an embodiment, the arc angle A1 is in the range of 3.7 degrees to 4.3 degrees, such as 4.0 degrees.

[0188] As discussed herein, the present disclosure is useful for reducing or removing the possible effects of window shape (e.g., concave, convex, or substantially flat) on processing (e.g., epitaxial deposition) operations, processing parameters, and film thickness growth. Fig.40 and 41 Window 4008 is shown) can be used with various processing chamber configurations, various processing kit configurations and / or various process configurations.

[0189] Fig.42 4 is a schematic top view of a flow guide 4200 according to one embodiment. The flow guide 4200 is disposed above a substrate 102. The flow guide 4200 includes a plate 4201 having a first face and a second face opposite to the first face. The flow guide 4200 includes a first fin group 4210a extending from the second face of the plate 4201 and a second fin group 4210b extending from the second face of the plate 4201. The second fin group 4210b is separated from the first fin group 4210a to define a flow path 4230 between the first fin group 4210a and the second fin group 4210b. The flow path 4230 has a serpentine pattern between the first fin group 4210a and the second fin group 4210b. The flow path 4230 is a single flow path between the first fin group 4210a and the second fin group 4210b. The serpentine flow path 4230 includes a plurality of linear paths (e.g., straightaways) and a plurality of arcuate paths (e.g., arcuate turns) interlaced with the plurality of linear paths. In one or more embodiments, the serpentine flow path 4230 includes a plurality of linear (e.g., rectangular) segments at least partially defined by the linear segments of the two fin groups 4210a, 4210b. In one or more embodiments, the serpentine flow path 4230 includes a plurality of arcuate (e.g., semicircular) segments at least partially defined by the arcuate segments of the two fin groups 4210a, 4210b. For each fin group 4210a, 4210b, the corresponding fins can be coupled together. For example, the corresponding fins can be integrally formed, fastened together, fused together, welded together, and / or otherwise attached to each other to form the corresponding fin groups 4210a, 4210b.

[0190] Each of the first fin group 4210a and the second fin group 4210b includes a plurality of linear segments 4211a, 4211b intersecting with a plurality of arc segments 4212a, 4212b. The first fin group 4210a and the second fin group 4210b are staggered so that the plurality of linear segments 4211a of the first fin group 4210a and the plurality of linear segments 4211b of the second fin group 4210b are arranged alternately. For each of the first fin group 4210a and the second fin group 4210b, the plurality of linear segments 4211a, 4211b include a first outer linear segment 4213a, 4213b, a second outer linear segment 4214a, 4214b, and a plurality of intermediate linear segments 4215a, 4215b disposed between the first outer linear segment 4213a, 4213b and the second outer linear segment 4214a, 4214b.

[0191] For each of the first fin group 4210a and the second fin group 4210b, the plurality of arc segments 4212a, 4212b include a first outer arc segment 4216a, 4216b, a second outer arc segment 4217a, 4217b, and a plurality of intermediate arc segments 4218a, 4218b disposed between the first outer arc segment 4216a, 4216b and the second outer arc segment 4217a, 4217b. For each of the first fin group 4210a and the second fin group 4210b, the first outer linear segment 4213a, 4213b intersects with one end of the first outer arc segment 4216a, 4216b, and the second outer linear segment 4214a, 4214b intersects with one end of the second outer arc segment 4217a, 4217b. For each of the first fin set 4210a and the second fin set 4210b, each of the plurality of intermediate linear segments 4215a, 4215b intersects two corresponding ends of both of the plurality of arc segments 4212a, 4212b.

[0192] The first outer linear section 4213a of the first fin group 4210a and the second outer linear section 4214b of the second fin group 4210b have a first length L1. Each of the first outer linear section 4213b of the second fin group 4210b and the second outer linear section 4214a of the first fin group 4210a has a length L2, L3 longer than the first length L1.

[0193] During deposition operations and / or cleaning operations, a gas (e.g., the one or more process gases P1) flows through the serpentine flow path 4230 between the first fin set 4210a and the second fin set 4210b. The fins and serpentine flow path 4230 facilitate adjustability of process parameters and help reduce or eliminate interference with performance (e.g., reducing or eliminating eddy current effects when the substrate 102 rotates during processing). The fins and serpentine flow path 4230 also facilitate efficient use of gases (e.g., the one or more process gases P1). The one or more process gases P1 flow into the flow path 4230 between the first outer linear segment 4213a and the first outer linear segment 4213b. The one or more process gases P1 flow out of the flow path 4230 between the second outer linear segment 4214a and the second outer linear segment 4214b.

[0194] Flow path 4230 facilitates a longer flow path and a relatively smaller flow path cross-sectional area, which can increase gas flow velocity to achieve modularity, parameter adjustability, and enhance uniformity at substantially similar gas partial pressures. The fins of deflector 4200 facilitate reducing or eliminating shadowing effects. The deflectors described herein are modular and swappable.

[0195] Fig.43 FIG. 4 is a schematic top view of a flow guide 4300 according to one embodiment. Fig.42 The deflector 4200 shown is similar and includes one or more of its aspects, features, components, properties and / or operations. For each of the first fin group 4310a and the second fin group 4310b, the plurality of arcuate segments 4312a, 4312b have a radius gradient that decreases in a direction D1 extending from the first side of the plate 4201 to the second side of the plate 4201. For example, the Nth radius RA of the second outer arcuate segment 4317a of the first fin group 4310a is N The first radius RA1 of the first outer arc section 4316a of the first fin group 4310a and the Nth radius RD of the second outer arc section 4317b of the second fin group 4310b are smaller than the first radius RA1 of the first outer arc section 4316a of the first fin group 4310a. N The flow path 4330 has a width gradient that decreases in the direction D1. For example, the Nth width WD N Less than the first width WD1 of the flow path 4330. Reducing the gradient is beneficial to increasing the uniformity of the gas velocity and the adjustability of the process parameters. The width gradient is beneficial to the uniformity of the gas flow velocity adjustment.

[0196] The board 4201 includes a first end 4251 and a second end 4252 opposite to the first end 4251. The first outer linear section 4313a of the first fin group 4310a is disposed at a first distance DS1 relative to the first end 4251 of the board 4201. The second outer linear section 4314a of the first fin group 4310a is disposed at a second distance DS2 relative to the second end 4252 of the board 4201. The second distance DS2 is different from the first distance DS1. Fig.43 In the illustrated embodiment, the second distance DS2 is greater than the first distance DS1.

[0197] Fig.44 According to one implementation method, Fig.42 A schematic bottom perspective view of the deflector 4200 is shown.

[0198] Fig.45 According to one implementation method, Fig.43 Schematic partial side view of the deflector 4300 shown. The first fin group 4310a includes a first outer linear segment 4313a, a second outer linear segment 4314a, and a plurality of intermediate linear segments 4315a. The second fin group 4310b includes a first outer linear segment 4313b, a second outer linear segment 4314b, and a plurality of intermediate linear segments 4315b. Fig.45In the illustrated embodiment, the shape of each segment of the flow path 4330 between corresponding fins is rectangular.

[0199] Fig.46 According to one implementation method, Fig.43 A schematic partial side view of the deflector 4300 is shown. Fig.46 In the illustrated embodiment, each section of the flow path 4330 between corresponding fins includes a portion that is semicircular in shape and a portion that is rectangular in shape.

[0200] exist Fig.46 In the illustrated embodiment, the flow director 4300 includes a plurality of flow ports 4651 extending through the plate 4201 to the flow path 4330. The flow ports 4651 facilitate the injection of gas from the upper portion 136b of the processing volume 136 into the lower portion 136a of the processing volume 136. Fig.46 In the illustrated embodiment, a plurality of second arcuate segments 4655 are disposed between corresponding fins. The second arcuate segments 4655 interface with the plate 4201. The flow port 4651 extends through the plate 4201 and the second arcuate segments 4655.

[0201] Fig.47 According to one implementation method, Fig.42 A schematic top view of the deflector 4200 is shown. Fig.47 In the embodiment shown, the deflector 4200 moves laterally (relative to Fig.42 The flow director 4200 may be moved to a position (as shown) to be more laterally offset relative to the substrate 102 and the substrate support 106. For example, the second outer linear segment 4214b is moved to be at least partially aligned above the substrate support 106 and the first outer linear segment 4213a is moved to a greater distance relative to the substrate 102 and the substrate support 106. Movement of the flow director 4200 may facilitate adjustability of process parameters and deposition thickness. The offset position of the flow director 4200 may facilitate operational uniformity (e.g., deposition uniformity), such as when the substrate 102 is rotated during processing.

[0202] Fig.48 FIG. 4 is a schematic top view of a flow guide 4800 according to one embodiment. Fig.42 The illustrated flow director 4200 is similar and includes one or more of its aspects, features, components, properties and / or operations.

[0203] The flow director 4800 includes an extended first fin set 4810a, which includes a plurality of first fins 4811a, which are spaced apart from each other to define a first set of flow paths 4812a. The flow director 4800 includes a second fin set 4810b, which has a plurality of second fins 4811b, which are spaced apart from each other to define a second set of flow paths 4812b. The flow director 4800 includes a central flow path 4830 between a first inner fin 4821a of the first fin set 4810a and a second inner fin 4821b of the second fin set 4810b.

[0204] Each of the plurality of first fins 4811a, the plurality of second fins 4811b, the first group of flow paths 4812a, and the second group of flow paths 4812b is arc-shaped. The shape of the central flow path 4830 is convex. The first fin group 4810a includes a first outer fin 4814a disposed on the outer side of the plurality of first fins 4811a, and the second fin group 4810b includes a second outer fin 4814b disposed on the outer side of the plurality of second fins 4811b. The length LE2 of each of the first outer fin 4814a and the second outer fin 4814b is longer than the length LE1 of the plurality of first fins 4811a and the plurality of second fins 4811b.

[0205] The flow director 4800 facilitates achieving equal flow flux in multiple regions of the exposed surface of the substrate 102. As an example, the gas velocity of the one or more process gases P1 in the first region of the substrate 102 (which is arranged under the first group of flow paths 4812a), the second region (which is arranged under the central flow path 4830), and the third region (which is arranged under the second group of flow paths 4812b) are substantially equal to each other. The one or more process gases P1 can be supplied to each of the central flow path 4830, the first group of flow paths 4812a, and the second group of flow paths 4812b from the same gas source. The present disclosure contemplates that the one or more process gases P1 can be independently supplied to each of the central flow path 4830, the first group of flow paths 4812a, and the second group of flow paths 4812b.

[0206] Fig.49 According to one implementation method, Fig.42 A schematic partial side view of the flow director 4200 is shown during reduced conditions in a processing chamber.

[0207] Fig.50 According to one implementation method, Fig.49 A schematic partial side view of the deflector 4200 is shown during a raised condition.

[0208] like Fig.49As shown in the reduced condition, the distance DA1 between the first group of fins 4210a and the second group of fins 4210b (on one side) and the substrate 102 (on the other side) is less than Fig.50 The distance DA1 is shown. One or more of the substrate support 106 and / or the plate 4201 of the deflector 4200 can be moved to adjust the distance DA1. The distance DA1 can be adjusted during a processing operation and / or between iterations of a processing operation. In one or more embodiments, the plate 4201 can remain supported on the one or more lugs 3522 of the upper pad 3520 during adjustment of the distance DA1. In one or more embodiments, the plate 4201 can be lifted to have clearance with the one or more lugs 3522 during adjustment of the distance DA1. In one or more embodiments, Fig.49 The illustrated distance DA1 is in the range of 0.2 mm to 2.0 mm (e.g., 1.0 mm) to promote a sealing condition between the fins of the fin sets 4210a, 4210b and the substrate 102 and to facilitate directing gas through the serpentine pattern of the flow path 4230. The distance DA1 during process (e.g., deposition) operations may vary in the range of 0.2 mm to 5.0 mm (e.g., in the range of 1.0 mm to 5.0 mm).

[0209] Fig.51 According to one implementation method, Fig.49 A schematic partial side view of the flow director 4200 in an inclined position is shown. The flow director 4200 is oriented in the inclined position such that the plate 4201 is oriented at an oblique angle relative to the base plate 102. In the inclined position, the first fin 5101 is disposed at a first vertical position that is different from a second vertical position of the second fin 5102. Fig.51 In the illustrated embodiment, the height of the second lug 5122 is greater than the height of the first lug 3522. The second lug 5122 may be angularly offset from one or more other lugs (e.g., the first lug 3522) so that the plate 4201 of the deflector 4200 may be raised, rotated, and lowered to a desired position. Fig.51 For example, the deflector 4200 can be tilted from a horizontal position (e.g. Fig.49 The upper surface of the first lug 3522 and / or the second lug 5122 may be tapered (as shown in the second lug 5122) to interface with the inclined plate 4201 contacting the lugs 3522, 5122. In one or more embodiments, the flow director 4200 may be moved to the inclined position by raising the substrate support 106 to engage the first portion of the flow director 4200 and then engaging the second portion, such that the flow director 4200 is tilted by further raising the substrate support 106.

[0210] Fig.52According to one implementation method, Fig.49 A schematic partial side view of the deflector 4200 in a tilted position is shown. In one or more embodiments, the plate 4201 of the deflector 4200 is coupled to the first flange 331 and the second flange 332. Each of the first flange 331 and the second flange 332 includes a tapered lower surface 5210 such that raising the substrate support 106 contacts the taller portion of each flange 331, 332 (which has a first height) and then contacts the shorter portion of each flange 331, 332 (which has a second height) such that further raising the substrate support 106 causes the deflector 4200 to tilt. Fig.53 is a schematic block diagram of a method 5300 for processing a substrate according to one embodiment.

[0211] Operation 5301 of method 5300 includes heating a substrate positioned on a substrate support.

[0212] Operation 5303 includes the steps of flowing one or more process gases through the substrate to form one or more layers on the substrate. The step of flowing the one or more process gases through the substrate includes the steps of directing the one or more process gases through one or more flow paths, the one or more flow paths being at least partially defined by a plurality of fins extending from a plate of a flow director.

[0213] Operation 5305 includes the steps of moving one or more of the substrate support or the plate to adjust the distance between the plurality of fins and the substrate. In one or more embodiments, the step of moving the plate includes the steps of raising the plate to lift the plate relative to the pad, and lowering the plate to engage the pad and support the plate in an inclined position on the pad. In one or more embodiments, the step of moving the plate includes the steps of raising the substrate support to engage one or more flanges of the deflector and tilting the plate to the inclined position. The one or more flanges include a first portion having a first height and a second portion having a second height less than the first height.

[0214] Benefits of the present disclosure include: sealing the lower portion of the processing space relative to the upper portion of the processing space during processing operations; modularity in process applications; adjusting deposition process parameters at low rotation speeds, high pressures and low flow rates; the ability to clean processing chambers (e.g., liners and windows), such as the upper portion of the processing space; reducing or removing the effects of window shape (e.g., contours) on processing operations; reducing or eliminating the formation of material on windows; using curved (e.g., convex and / or concave) windows; temperature adjustment and temperature uniformity; deposition uniformity; high throughput and yield; adjustability of gas flow paths; mitigation of rotation effects; separate gas supply to the upper portion of the processing space; and reducing or eliminating interference with heating (e.g., light from heating lamps).

[0215] As an example, a rectangular flow port for the one or more process gases facilitates a smaller cross-section, which facilitates adjustment of process parameters (e.g., gas pressure, process temperature, gas composition, and / or gas flow rate) for the one or more process gases. The flow guide also facilitates the ability to have a clean gas path (which at least partially bypasses the rectangular flow port), which facilitates cleaning of components in the interior space (e.g., one or more surfaces of the window and / or one or more surfaces of the upper liner). The seal and adjustment facilitate low rotation speed of the substrate support (e.g., less than 8 RPM), high pressure of the one or more process gases, and low flow rate of the one or more process gases. As another example, the seal and rectangular flow port facilitate mitigation of the effects of the rotating substrate support on the one or more process gases (e.g., gas vortex). As another example, the flow guide facilitates adjustment while reducing or eliminating interference of the adjustment with heating of components (e.g., substrate and / or preheat ring). The rectangular flow port, seal, and adjustability also facilitate reducing or removing the possible effects of the window shape (e.g., concave, convex, or substantially flat) on processing (e.g., epitaxial deposition) operations, processing parameters, and film thickness growth. Reducing or removing the influence will at least partially isolate the window shape from the treatment efficacy. In addition, as an example, adjustability facilitates the use of concave or convex windows in addition to substantially flat windows. The present disclosure contemplates that substantially flat windows can be used with the embodiments described herein.

[0216] In addition, embodiments of the present disclosure (e.g., embodiments of the mid-plate) are modular and can be used for various processing (e.g., deposition) operations and / or cleaning operations, including for various operating parameters. In addition, depending on the processing parameters (e.g., flow rates, temperatures, pressures, gas compositions, etc.) used in the processing operations and / or cleaning operations, one or more aspects, features, components, operations, and / or properties of the various processing accessories (e.g., mid-plates) described herein can be selected, combined, and / or modified.

[0217] Sealing also facilitates reducing or eliminating the buildup of material on the windows (eg, the upper window) (eg, deposition of deposition material during processing operations).

[0218] It is contemplated that one or more aspects disclosed herein may be combined. As an example, one or more aspects, features, components, operations, and / or properties of the process chamber 100, the controller 120, the process chamber 300, the process chamber 700, the lock stop structures 910a, 910b, the lock extension 1001, the process chamber 1300, the process chamber 2300, the process accessory 310, the process accessory 1310, the process accessory 2310, the fins 2610, 2710, 2810, 3110, and / or 3210, the support legs 3310, 3311, the method 3400, the process chamber 3500, the process accessory 3510, the method 3900, the process chamber 4000, the window 4008, the flow guide 4200, the flow guide 4300, the flow orifice 4651, the flow guide 4800, and / or the method 5300 may be combined. Furthermore, it is contemplated that one or more aspects disclosed herein may include some or all of the benefits described above.

[0219] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims

1. A process accessory for placement in a process chamber suitable for semiconductor manufacturing, the process accessory comprising: Deflector, comprising: a middle plate having a first side and a second side opposite to the first side along a first direction, wherein the first side and the second side are arc-shaped, a first flange extending outwardly relative to the third side of the middle plate and extending outwardly relative to the outer side surface of the middle plate, a second flange extending outwardly relative to a fourth side of the middle plate and extending outwardly relative to the outer side surface of the middle plate, the fourth side being opposite to the third side along a second direction, the second direction intersecting the first direction, and A rectangular flow port is defined between a first planar inner side surface of the first flange and a second planar inner side surface of the second flange.

2. The treatment kit of claim 1, wherein each of the first flange and the second flange is semicircular in shape.

3. A processing accessory as described in claim 1, wherein the inner side of the midplate includes one or more fins, each fin having a planar edge, a curved edge or a patterned edge, wherein the length of each of the one or more fins is less than the diameter extending between the first side and the second side.

4. The treatment kit of claim 1, wherein the deflector further comprises: a first edge section extending between the third side of the mid-plate and the first flange; and A second edge section extends between the fourth side of the middle plate and the second flange.

5. The treatment kit of claim 4, wherein each of the first edge segment and the second edge segment is rectangular in shape.

6. The treatment kit of claim 5, wherein the deflector further comprises: a first opening formed between the first flange and the first edge section, and A second opening is formed between the second flange and the second edge section.

7. The treatment kit of claim 6, further comprising a cover, the cover comprising: ring; a first protrusion extending from the ring and configured to extend into the first opening; and A second protrusion extends from the ring and is configured to extend into the second opening.

8. The processing accessory of claim 7, wherein the first protrusion and the second protrusion are slidable in the first opening and the second opening, respectively, wherein each of the first opening, the second opening, the first protrusion, and the second protrusion is semicircular in shape.

9. The process kit of claim 1, wherein the flow deflector further comprises: one or more first openings formed in the mid-plate adjacent the first side; and One or more second openings are formed in the mid-plate adjacent the second side.

10. The processing accessory as described in claim 9 further includes a cover, wherein the cover is configured to cover the one or more first openings and the one or more second openings, and the cover includes a ring, and the width of the ring is greater than the main diameter of each of the one or more first openings and the one or more second openings.

11. A processing chamber suitable for semiconductor manufacturing, the processing chamber comprising: a window at least partially defining the interior space; Multiple lights; a substrate support member disposed in the internal space, the substrate support member comprising a support surface; and A processing accessory is arranged in the internal space, and the processing accessory includes a flow guide, and the flow guide includes: a middle plate, disposed between the support surface and the plurality of lamps, the middle plate having a first side and a second side, the first side and the second side being arc-shaped, a first flange extending outwardly relative to the third side of the middle plate and extending outwardly relative to the outer side surface of the middle plate, a second flange extending outwardly relative to a fourth side of the middle plate and extending outwardly relative to the outer side surface of the middle plate, and A rectangular flow port is defined between a first planar inner side surface of the first flange and a second planar inner side surface of the second flange.

12. The processing chamber of claim 11, wherein the first flange and the second flange are supported on a preheat ring disposed outside the substrate support.

13. The processing chamber of claim 11, wherein the midplate is supported on a liner.

14. A method for processing a substrate, the method comprising the steps of: heating a substrate positioned on a substrate support; One or more process gases are flowed through the substrate to form one or more layers on the substrate, the step of flowing the one or more process gases through the substrate comprising the steps of: directing the one or more process gases through a rectangular flow port of a process accessory; moving at least a portion of the processing assembly to open one or more first openings and one or more second openings; flowing one or more cleaning gases through the one or more first openings and into a region between the process assembly and the window; and The one or more cleaning gases are flowed through the region and into the one or more second openings.

15. The method of claim 14, wherein the step of moving the at least a portion of the processing assembly comprises the steps of: While the middle plate of the deflector is supported on the preheating ring, the cover is lifted to slide one or more protrusions of the cover relative to the middle plate.

16. The method of claim 14, wherein the step of moving the at least a portion of the processing assembly comprises the steps of: The cover is lifted, the cover comprising a ring having a width greater than a major diameter of each of the one or more first openings and the one or more second openings.

17. The method of claim 14, wherein the step of moving the at least a portion of the processing assembly comprises the steps of: The mid-plate of the flow director is raised or lowered by moving two flanges coupled to the mid-plate of the flow director using the substrate support.

18. The method of claim 14, further comprising the steps of: During the step of flowing the one or more process gases through the substrate, the substrate is rotated at a rotational speed of less than 8 revolutions per minute (RPM).

19. The method of claim 14, further comprising the steps of: prior to said step of moving said at least a portion of said process assembly, exhausting said one or more process gases through an exhaust path at least partially formed in a sidewall; and After the step of flowing the one or more cleaning gases into the one or more second openings, the one or more cleaning gases are exhausted through the exhaust path.

20. The method of claim 14, further comprising the steps of: The processing accessory is rotated at a rotation angle greater than 0 degrees and less than 90 degrees.

21. A flow director suitable for semiconductor manufacturing, the flow director comprising: a plate having a first side and a second side opposite to the first side; a first fin group extending from the second surface; and A second fin group extends from the second face, the second fin group being spaced apart from the first fin group to define a flow path between the first fin group and the second fin group, the flow path having a serpentine pattern between the first fin group and the second fin group.

22. The deflector of claim 21, wherein each of the first fin set and the second fin set comprises a plurality of linear segments intersecting a plurality of arcuate segments. 23 . The deflector of claim 22 , wherein the first fin group is staggered with the second fin group such that the plurality of linear segments of the first fin group and the plurality of linear segments of the second fin group are arranged in an alternating manner.

24. The flow director of claim 22, further comprising a plurality of flow ports extending through said plate to said flow path.

25. The deflector of claim 22, wherein for each of the first fin set and the second fin set: The plurality of arcuate segments have a radius gradient that decreases in a direction extending from a first side of the plate to a second side of the plate.

26. The deflector of claim 22, wherein for each of the first fin set and the second fin set: The plurality of linear sections include a first outer linear section, a second outer linear section, and a plurality of intermediate linear sections disposed between the first outer linear section and the second outer linear section; and The plurality of arcuate segments include a first outer arcuate segment, a second outer arcuate segment, and a plurality of intermediate arcuate segments disposed between the first outer arcuate segment and the second outer arcuate segment.

27. The flow director of claim 26, wherein: The plate includes a first end and a second end opposite the first end; The first outer linear section of the first fin set is disposed at a first distance relative to the first end of the plate; and The second outer linear segment of the first fin set is disposed at a second distance relative to the second end of the plate, wherein the second distance is greater than the first distance.

28. The deflector of claim 26, wherein for each of the first fin set and the second fin set: The first outer linear section intersects one end of the first outer arcuate section; and The second outer linear section intersects one end of the second outer arcuate section.

29. The deflector of claim 28, wherein for each of the first fin set and the second fin set: Each of the plurality of intermediate linear segments intersects two respective ends of two of the plurality of arcuate segments.

30. The deflector of claim 26, wherein the first outer linear segment of the first fin group and the second outer linear segment of the second fin group have a first length, and each of the first outer linear segment of the second fin group and the second outer linear segment of the first fin group has a length longer than the first length.

31. A flow director suitable for semiconductor manufacturing, the flow director comprising: a plate having a first side and a second side opposite to the first side; a first fin set extending from the second face, the first fin set having a plurality of first fins, the plurality of first fins being spaced apart from each other to define a first set of flow paths; a second fin set extending from the second face, the second fin set having a plurality of second fins, the plurality of second fins being spaced apart from each other to define a second set of flow paths; A central flow path is between the first inner fin of the first fin group and the second inner fin of the second fin group.

32. The deflector of claim 31, wherein each of the plurality of first fins and the plurality of second fins is arcuate.

33. The flow director of claim 32, wherein: The first fin group includes a first outer fin disposed outside the plurality of first fins; and The second fin group includes a second outer fin disposed outside the plurality of second fins, wherein a length of each of the first outer fin and the second outer fin is longer than a length of the plurality of first fins and the plurality of second fins.

34. A method for processing a substrate, the method comprising the steps of: heating a substrate positioned on a substrate support; flowing one or more process gases through the substrate to form one or more layers on the substrate, the step of flowing the one or more process gases through the substrate comprising the steps of: directing the one or more process gases through one or more flow paths, the one or more flow paths being at least partially defined by a plurality of fins extending from a plate of a flow director; and One or more of the substrate support or the plate is moved to adjust a distance between the plurality of fins and the substrate.

35. The method of claim 34, wherein moving the plate to orient the plate in an inclined position wherein a first fin is disposed at a first vertical position different than a second vertical position of a second fin.

36. The method of claim 35, wherein the step of moving the plate comprises the steps of: raising the plate to elevate the plate relative to the pad; and The plate is lowered to engage the pad and support the plate on the pad in the inclined position.

37. The method of claim 35, wherein the step of moving the plate comprises the steps of: The substrate support is raised to engage the one or more flanges of the deflector and tilt the plate to the tilted position.

38. The method of claim 37, wherein the one or more flanges include: A first portion having a first height; The second portion has a second height that is smaller than the first height.

39. The method of claim 34, wherein the plate is moved to adjust the distance to less than 0.2 mm.

40. The method of claim 39, wherein the plurality of fins comprises a first fin group and a second fin group separated from the first fin group to define a single flow path between the first fin group and the second fin group, the single flow path having a serpentine pattern between the first fin group and the second fin group.

41. A process kit for placement in a process chamber suitable for semiconductor manufacturing, the process kit comprising: a plate having a first side and a second side opposite to the first side; Pads, including: Ring section, one or more lugs extending inwardly relative to the annular segment, the one or more lugs being configured to support one or more outer regions of the second face of the plate, one or more inlet openings extending to an inner surface of the annular section of the first side of the liner, and One or more outlet openings extend to the inner surface of the annular section of the second side of the liner.

42. The treatment kit of claim 41, wherein the one or more inlet openings extend from an outer surface of the annular section of the liner to the inner surface, and the one or more outlet openings extend from a lower surface of the liner to the inner surface.

43. The treatment kit of claim 41, wherein a lowermost end of the plate is arranged above a lowermost end of the pad.

44. The treatment kit of claim 42, wherein the pad further comprises a first extension portion and a second extension portion disposed on an outer side of the lower surface of the pad.

45. The treatment kit of claim 44, wherein at least a portion of the annular section of the gasket is aligned with the first extension and the second extension.

46. ​​A processing chamber suitable for semiconductor manufacturing, the processing chamber comprising: Internal space; Multiple lights; a substrate support member disposed in the internal space, the substrate support member comprising a support surface; a window at least partially defining the interior space, the window comprising: a first surface, the first surface being concave or flat, and A second face, the second face being convex, the second face facing the substrate support.

47. The processing chamber of claim 46, wherein the window comprises an inner section and an outer section, the first face and the second face being at least a portion of the inner section.

48. The processing chamber of claim 47, wherein the inner section is transparent and the outer section is opaque.

49. The processing chamber of claim 47, wherein the second face comprises one or more portions, each of the one or more portions having a radius of curvature at least 1.5 times greater than a width of the inner section.

50. The processing chamber of claim 49, wherein the radius of curvature is at least 2.0 times greater than the width.

51. The processing chamber of claim 47, wherein the second face has an arc angle less than 40 degrees.

52. The process chamber of claim 46, further comprising a process kit disposed in the interior space, the process kit comprising: a board having a first surface and a second surface opposite to the first surface, the second surface of the board facing the first surface of the window; and Pads, including: Ring section, One or more lugs extend inwardly relative to the annular section, the one or more lugs supporting one or more outer regions of the second face of the plate.

53. The processing chamber of claim 52, wherein the liner further comprises: one or more inlet openings extending to an inner surface of the annular section of the first side of the liner, and One or more outlet openings extend to the inner surface of the annular section of the second side of the liner.

54. The processing chamber of claim 53, wherein the one or more inlet openings extend from an outer surface of the annular section of the liner to the inner surface, and the one or more outlet openings extend from a lower surface of the liner to the inner surface.

55. A method of processing a substrate, the method comprising the steps of: heating a substrate positioned on a substrate support in a processing volume of the chamber; flowing one or more process gases through the substrate to form one or more layers on the substrate, the step of flowing the one or more process gases through the substrate comprising the steps of: directing the one or more process gases between a plate and the substrate, the plate being supported on a liner to divide the process volume into a lower portion and an upper portion; exhausting the one or more process gases; flowing one or more cleaning gases through the upper portion, the upper portion being between the plate and the window, while the plate is supported on the backing; and The one or more cleaning gases are exhausted.

56. The method of claim 55, further comprising the steps of: One or more purge gases are flowed through the upper portion concurrently with the step of flowing the one or more process gases through the substrate.

57. The method of claim 56, further comprising the steps of: One or more cleaning gases are flowed through the lower portion of the processing volume.

58. The method of claim 57, wherein the one or more process gases flow through one or more first inlet openings in fluid communication with the lower portion of the process volume.

59. The method of claim 58, wherein the one or more purge gases flow through one or more second inlet openings in fluid communication with the upper portion of the processing volume.

60. The method of claim 59, wherein the one or more second inlet openings are angularly offset from the one or more first inlet openings along the circumference of the chamber.

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