Wafer supporting structure and vapor deposition device thereof

Abstract

The invention discloses a wafer supporting structure and a vapor deposition device thereof. The wafer supporting structure comprises a wafer tray used for carrying a wafer, and the wafer tray comprises a substrate and an edge part surrounding the substrate; the bearing ring is arranged around the wafer tray, the bearing ring comprises an annular main body part and a carrying part extending towards the inner side from the main body part, at least part of the carrying part is located below the edge part, and the top surface of the main body part is at least higher than the bottom surface of the edge part; the wafer tray and the bearing ring are both supported on the rotating drum in a contact mode, and a first gap enabling the bearing ring and the wafer tray to be completely separated is formed between the bearing ring and the wafer tray; the outer diameter of the bearing ring is larger than that of the rotary drum. According to the invention, the edge heat dissipation of the wafer tray can be reduced, the temperature distribution on the surface of the wafer is more uniform, the process requirements are better met, and the problems that the wafer tray is easy to crack and the service life is relatively short are effectively solved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor equipment, and in particular to a wafer support structure and a vapor deposition device thereof. Background Art

[0002] The descriptions in this section merely provide background information related to the present disclosure and may not constitute prior art.

[0003] In the semiconductor manufacturing process, the vapor deposition process forms a thin film on the wafer surface by causing physical or chemical changes in the reaction gas, including physical vapor deposition (PVD), chemical vapor deposition (CVD), etc. Among them, in the chemical vapor deposition process, especially the metal vapor chemical deposition process (MOCVD), maintaining the uniformity of the wafer surface temperature is an important factor to ensure the process effect.

[0004] Figure 1 A chemical vapor deposition device is shown, which includes a reaction chamber 1. A rotation system 2 is provided at the bottom of the reaction chamber 1. A wafer supporting structure for supporting a wafer W is provided at the top of the rotation system 2. Figure 2 A wafer support structure is shown, which includes a hollow rotating drum 55 mounted on a rotating system 2, and a wafer tray 54 placed on the rotating drum 55, and a wafer slot for accommodating a wafer W is provided on the top surface of the wafer tray 54. Figure 1 and Figure 2 As shown, in order to enable the robot to carry the wafer tray 54 from the rotating drum 55 and enter and exit the cavity, the outer diameter of the wafer tray 54 is larger than the outer diameter of the rotating drum 55, so that the wafer tray 54 has an extension 56 protruding from the outer wall of the rotating drum 55, and the bottom surface of the extension 56 is the robot support position. Figure 1 A heater 7 for heating the wafer W is also provided inside the rotating drum 55 of the wafer support structure and below the wafer tray 54. A spray system 3 for introducing the reaction gas into the chamber is provided above the reaction chamber 1. An exhaust system 6 is provided at the bottom of the reaction chamber 1 to discharge the process waste gas after the reaction out of the chamber and maintain the vacuum environment in the chamber. An annular cold wall 4 is usually provided between the wafer tray 54 and the side wall of the chamber to reduce the high temperature generated during heating from being directly radiated to the wall of the chamber.

[0005] During the process, the wafer W is placed in the wafer slot of the wafer tray 54, the rotating system 2 drives the wafer support structure and the wafer W thereon to rotate at high speed, the heater 7 heats the wafer tray 54 and the wafer W thereon, and the reaction gas is sent into the reaction chamber 1 through the spray system 3, flows to the wafer W below, and grows a thin film on the surface of the wafer W. Among them, maintaining the uniformity of the surface temperature of the wafer W is an important factor in ensuring the process effect. Since the heater 7 is not in direct contact with the wafer W, the heater 7 first heats the wafer tray 54 during operation, and the wafer tray 54 then transfers heat to the wafer W through heat conduction. Therefore, the temperature uniformity of the wafer tray 54 determines the temperature uniformity of the wafer W.

[0006] Since the outer side of the wafer tray 54 is an extension portion 56, it cannot be directly heated by the heater 7 arranged inside the rotating drum 55; and there is heat conduction between the outer wall of the wafer tray 54 and the low-temperature cold wall, so the temperature difference between the central area and the outer wall of the wafer tray 54 will be relatively large, which will cause the wafer tray 54 to easily crack and seriously shorten its life. It will also affect the uniformity of the temperature distribution of the wafer W and affect the process yield.

[0007] It should be noted that the above introduction to the technical background is only for the convenience of providing a clear and complete description of the technical solution of the present invention and for the convenience of understanding by those skilled in the art. It cannot be considered that the above contents are well known to those skilled in the art simply because they are described in the background technology section of the present invention. Summary of the invention

[0008] The purpose of the present invention is to provide a wafer support structure and a vapor deposition device thereof, which can reduce the edge heat dissipation of the wafer tray, make the temperature distribution on the wafer surface more uniform, better meet the process requirements, and effectively solve the problems of easy cracking and poor service life of the wafer tray.

[0009] In order to achieve the above object, the present invention is implemented by the following technical solutions:

[0010] A wafer support structure for a vapor deposition device, comprising:

[0011] A wafer tray, used for carrying wafers, the wafer tray comprising a substrate and an edge portion surrounding the substrate;

[0012] A carrying ring is arranged around the wafer tray, the carrying ring comprises an annular main body and a supporting portion extending inwardly from the main body, at least part of the supporting portion is located below the edge portion, and the top surface of the main body is at least higher than the bottom surface of the edge portion;

[0013] A rotating drum, the wafer tray and the carrying ring are both supported in contact with each other on the rotating drum, and a first gap is provided between the carrying ring and the wafer tray to completely separate the two;

[0014] The outer diameter of the carrying ring is greater than the outer diameter of the drum.

[0015] Preferably, the top surface of the main body is not lower than the top surface of the wafer tray.

[0016] Preferably, the rotating drum comprises an annular supporting portion located at the top, and the wafer tray and the carrying ring are both supported in contact with the supporting portion.

[0017] Preferably, the supporting portion includes a first supporting portion located radially inwardly for supporting the wafer tray, and a second supporting portion located radially outwardly for supporting the carrying ring.

[0018] Preferably, the bottom of the substrate protrudes from the bottom surface of the edge portion, and the first supporting portion is sleeved on the outside of the bottom of the substrate to limit the wafer tray.

[0019] Preferably, the wafer tray also includes a hanging portion arranged between the edge portion and the substrate, and the hanging portion is contact-supported on the first supporting portion; and a distance between a bottom surface of the edge portion and a top surface of the second supporting portion is greater than a height of the supporting portion.

[0020] Preferably, a top surface of the first supporting portion is higher than a top surface of the second supporting portion.

[0021] Preferably, the bottom surface of the hanging portion is at the same height as the bottom surface of the edge portion; or the bottom surface of the hanging portion is lower than the bottom surface of the edge portion.

[0022] Preferably, the bottom surface of the hanging portion is lower than the bottom surface of the edge portion, and the top surfaces of the first supporting portion and the second supporting portion are at the same height.

[0023] Preferably, a matching first limiting structure is provided on the top of the first supporting portion and the bottom of the base plate for limiting the position of the wafer tray.

[0024] Preferably, the first limiting structure is an annular step or an annular slope.

[0025] Preferably, the top surfaces of the first supporting portion and the second supporting portion have the same top surface height.

[0026] Preferably, the supporting portion is sleeved on the outside of the first supporting portion to limit the carrying ring.

[0027] Preferably, the bottom surfaces of the main body and the supporting portion are at the same height.

[0028] Preferably, the bottom surface of the main body is lower than the bottom surface of the supporting portion, and the bottom of the main body is sleeved on the outside of the second supporting portion to limit the carrying ring.

[0029] Preferably, the bottom surface of the main body is lower than the bottom surface of the supporting part, and the bottom of the main body is sleeved on the outside of the second supporting part to limit the carrying ring; and a second gap is provided between the supporting part and the first supporting part to separate the two.

[0030] Preferably, the bottom surface of the main body portion and the top surface of the second supporting portion are provided with second limiting structures that cooperate with each other to limit the carrying ring.

[0031] Preferably, the second limiting structure is an annular step or annular inclined surface which is matched with each other and is respectively arranged on the bottom surface of the main body and the top surface of the second supporting portion.

[0032] Preferably, the second annular step or the second annular slope of the second supporting portion is arranged at the outer edge of the top surface thereof.

[0033] Preferably, the first gap is not less than 0.1 mm and not more than 2.0 mm.

[0034] A vapor deposition device comprises a reaction chamber and a rotating system penetrating into the chamber from the bottom of the reaction chamber, wherein the reaction chamber comprises:

[0035] Any of the above wafer support structures, wherein the wafer support structure is connected to the rotation system;

[0036] A heater is disposed in the rotating drum of the wafer support structure and below the wafer tray;

[0037] A gas inlet device for supplying process gas;

[0038] The exhaust device is used to exhaust process waste gas and control the vacuum degree of the reaction chamber.

[0039] Preferably, the reaction chamber further includes:

[0040] A cold wall is arranged around the wafer support structure to reduce the direct radiation of high temperature to the wall surface of the reaction chamber.

[0041] Preferably, the wafer support structure also includes:

[0042] The robot is used to support the carrying ring of the wafer support structure, and to support and move the wafer tray into and out of the reaction chamber through the carrying ring.

[0043] Compared with the prior art, the present invention has the following advantages:

[0044] 1. By adopting a double-layer structure design in which the wafer tray and the carrying ring are completely separated, a temperature insulation layer without direct heat conduction can be formed between the wafer tray and the cold wall, reducing the edge heat dissipation of the wafer tray, making the temperature distribution of the wafer tray more uniform and better meeting the process requirements; and the radial temperature difference between the wafer tray and the carrying ring is small, which can effectively solve the problem of easy cracking of the wafer tray and poor service life;

[0045] 2. By separately setting the wafer tray and the rotating drum, as well as the relative limiting structure between the carrying ring and the rotating drum, it is ensured that each component is concentric with the wafer, avoiding the eccentricity problem of the wafer support structure when rotating at high speed;

[0046] 3. By adopting a design without a suspension part, the area of ​​the wafer tray that is not directly heated by the heater is reduced, and the heat radiation heat dissipation in the edge area is greatly reduced, further reducing the radial temperature difference of the wafer tray and improving temperature uniformity. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for describing the embodiments are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0048] Figure 1 It is a front cross-sectional view of a chemical vapor deposition device in the prior art;

[0049] Figure 2 A front cross-sectional view of a wafer support structure in the prior art;

[0050] Figure 3a is a front cross-sectional view of one embodiment of a wafer support structure of the present invention;

[0051] Figure 3b for Figure 3a A partial enlarged view of the middle area X;

[0052] Figure 4 It is a partial enlarged front cross-sectional view of one embodiment of the wafer support structure of the present invention;

[0053] Figure 5 It is a partial enlarged front cross-sectional view of one embodiment of the wafer support structure of the present invention;

[0054] Figure 6a is a front cross-sectional view of one embodiment of a wafer support structure of the present invention;

[0055] Figure 6b for Figure 6aA partial enlarged view of the middle area Y;

[0056] Figure 7 It is a partially enlarged front cross-sectional view of one embodiment of the wafer support structure of the present invention. DETAILED DESCRIPTION

[0057] In order to make the purpose, technical solutions and advantages of the present invention clearer, the present invention will be further described below in conjunction with the accompanying drawings. The described embodiments should not be regarded as limiting the present invention. All other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0058] In the following description, reference is made to “some embodiments”, “one or more embodiments”, which describe a subset of all possible embodiments, but it can be understood that “some embodiments”, “one or more embodiments” may be the same subset or different subsets of all possible embodiments and may be combined with each other without conflict.

[0059] In the following description, the terms "first\second\third" are only used to distinguish similar objects and do not represent a specific ordering of the objects. It can be understood that "first\second\third" can be interchanged with a specific order or sequence where permitted, so that the embodiments of the present invention described here can be implemented in an order other than that shown or described.

[0060] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which the present invention belongs. The terms used herein are only for the purpose of describing the embodiments of the present invention and are not intended to limit the present invention.

[0061] The present invention provides a wafer support structure and a vapor deposition device thereof, which adopts a double-layer structure design in which a wafer tray and a carrying ring are completely separated, so that a temperature insulation layer without direct heat conduction can be formed between the wafer tray and the cold wall, reducing the heat dissipation at the edge of the wafer tray, making the temperature distribution of the wafer tray more uniform, and better meeting the process requirements. The following is a detailed description in conjunction with Figures 3 to 7.

[0062] like Figure 3a , 6a As shown, the wafer support structure of the present invention includes three parts: a wafer tray 51 for carrying wafers, a carrying ring 52 arranged around the wafer tray 51, and a rotating drum 53 located below the wafer tray 51 and the carrying ring 52 to support both.

[0063] First embodiment

[0064] like Figure 3a , 3bAs shown, the rotating drum 53 is a hollow cylinder, connected to the rotating system, and supports the wafer tray 51 and the carrying ring 52, and is used to drive the two to rotate under the drive of the rotating system. The rotating drum 53 includes an annular support portion 530 located at the top, and the wafer tray 51 and the carrying ring 52 are both contact-supported on the support portion 530. Among them, the support portion 530 includes a first support portion 530a located on the radial inner side for supporting the wafer tray 51, and a second support portion 530b located on the radial outer side for supporting the carrying ring 52, and the top surface of the first support portion 530a is higher than the top surface of the second support portion 530b.

[0065] The wafer tray 51 comprises a base plate 511 located in the central area, the top surface of which is provided with a wafer slot 510 for accommodating wafers; an annular hanging portion 512 extending radially outward from the base plate 511; and an annular edge portion 513 extending radially outward from the hanging portion 512. The bottom surfaces of the hanging portion 512 and the edge portion 513 are at the same height, the bottom of the base plate 511 protrudes from the bottom surface of the hanging portion 512, the hanging portion 512 is contact-supported on the first supporting portion 530a, and the first supporting portion 530a is adaptively sleeved on the outside of the bottom of the base plate 511 to limit the wafer tray 51. The edge portion 513 is located above the second supporting portion 530b, and an annular space for accommodating the carrying ring 52 is formed between the bottom surface of the edge portion 513, the top surface of the second supporting portion 530b, and the outer wall of the first supporting portion 530a. The bottom surfaces of the hanging portion 512 and the edge portion 513 may also be made unequal in height, that is, the bottom of the hanging portion 512 extends downward and protrudes from the bottom surface of the edge portion 513, and the top surface height of the first supporting portion 530a is reduced, so that an annular space can be obtained. However, the preferred solution is that the bottom surfaces of the hanging portion 512 and the edge portion 513 are equal in height, and the wafer tray 51 of this solution has a more regular shape, and the design and processing costs are lower.

[0066] The carrying ring 52 has two functions: one is to form a temperature-insulating layer around the wafer tray 51 to reduce the heat conduction between the outer wall of the wafer tray 51 and the low-temperature cold wall; the other is to realize the robot to carry the wafer tray 51 through the carrying ring 52. The carrying ring 52 includes a ring-shaped main body 521 and a supporting part 522 extending inward from the main body 521. Among them, the outer diameter of the carrying ring 52 is larger than the outer diameter of the rotating drum 53, so that at least part of the bottom surface of the main body 521 is exposed as a robot supporting position 520. The bottom surface of the main body 521 is lower than the bottom surface of the supporting part 522, and the bottom of the main body 521 is adaptively sleeved on the outside of the second support part 530b to limit the carrying ring 52. The top surface of the main body 521 is at least higher than the bottom surface of the edge part 513 to form a temperature-insulating layer between the wafer tray 51 and the cold wall 4, reducing the heat radiation from the side wall of the wafer tray 51 to the low-temperature cold wall 4. Preferably, the top surface of the main body 521 is not lower than the top surface of the wafer tray 51 , so that the thermal insulation layer has a higher height, better wraps the side wall of the wafer tray 51 , and has a better effect of reducing heat radiation.

[0067] The supporting portion 522 is used to support the wafer tray 51, and is inserted into the annular space between the wafer tray 51 and the rotating drum 53, and at least part of the supporting portion 522 is located below the edge portion 513. In addition, there is a first gap between the carrying ring 52 and the wafer tray 51 to completely separate the two, thereby preventing the wafer tray 51 from directly conducting heat to the carrying ring 52, and preventing the edge area of ​​the wafer tray 51 from rapidly dissipating heat. In this embodiment, the first gap includes a first longitudinal gap F1 located between the main body 521 and the edge portion 513, and a transverse gap F2 located between the edge portion 513 and the supporting portion 522. When the robot takes the wafer, the robot lifts the carrying ring 52 from the robot supporting position 520. As the carrying ring 52 is lifted, the transverse gap F2 gradually disappears, and the supporting portion 522 of the carrying ring 52 fits the edge portion 513 of the wafer tray 51. When the robot continues to lift, the carrying ring 52 drives the wafer tray 51 to rise. When the wafer tray 51 is completely separated from the rotating drum 53, it is transported out of the reaction chamber. Placing the wafer is a reverse process. The robot carries the carrying ring 52 to drive the wafer tray 51 downward. When the wafer tray 51 is supported on the top surface of the rotating drum 53, the wafer tray 51 stops descending. The robot carries the carrying ring 52 to continue to descend. The carrying ring 52 is separated from the wafer tray 51, and there is a first gap between the two. After continuing to descend until the carrying ring 52 is supported on the top surface of the rotating drum 53, the wafer is placed and the robot is withdrawn.

[0068] Preferably, a second gap F′ is provided between the supporting portion 522 and the first supporting portion 530 a to separate the two, thereby reducing the influence of the temperature of the suspension portion 512 on the temperature of the suspension portion 512 caused by rapid heat dissipation of the first supporting portion 530 a located inside through heat conduction with the carrying ring 52 .

[0069] Second embodiment

[0070] like Figure 4 As shown, the difference between the second embodiment and the first embodiment is that the limiting of the carrying ring 52 is achieved by the supporting portion 522 being adaptively sleeved on the outside of the first supporting portion 530a. Preferably, the main body 521 of the carrying ring 52 and the bottom surface of the supporting portion 522 are at the same height, so that the carrying ring 52 has a more regular shape and lower design and processing costs.

[0071] Third embodiment

[0072] like Figure 5 As shown, the difference between the third embodiment and the first embodiment is that: the wafer tray 51 is not provided with a hanging part, and only includes a base plate 511 and an edge portion 513 connected to each other. The bottom of the base plate 511 protrudes from the bottom surface of the edge portion 513, and the base plate 511 is supported on the first support portion 530a. The bottom outer edge of the base plate 511 and the top inner edge of the first support portion 530a are respectively provided with matching first annular steps T1 and T1', which are used to support and limit the wafer tray 51 through the cooperation of the two. It can be understood that the first annular steps T1 and T1' provided on the bottom outer edge of the base plate 511 and the top inner edge of the first support portion 530a can be deformed into any structure that can limit the wafer tray 51. For example, it can be deformed into a matching first annular slope that tilts downward from the outside to the inside in the radial direction, which can achieve the same effect, and has a more regular appearance, and the design and processing costs are lower. In addition, in this embodiment, it is not necessary to require that the top surface of the first support portion 530a is higher than the top surface of the second support portion 530b. Preferably, the top surface heights of the first support portion 530a and the second support portion 530b are the same, and the rotating drum 53 has a more regular shape, and the design and processing costs are lower. Among them, when the top surface heights of the first support portion 530a and the second support portion 530b are the same, the annular space for accommodating the carrying ring 52 is composed of the bottom surface of the edge portion 513, the top surface of the second support portion 530b and the outer wall of the substrate 511, and the first gap is composed of the first longitudinal gap F1, the transverse gap F2, and the second longitudinal gap F3 located between the supporting portion 522 and the substrate 511. In this embodiment, since the wafer tray 51 abandons the outwardly extending suspension portion, on the one hand, the area of ​​the wafer tray 51 that is not directly heated by the heater is reduced, and on the other hand, the reduction of the outwardly extending portion also greatly reduces the heat radiation heat dissipation of the edge area, thereby further reducing the radial temperature difference of the wafer tray 51 and improving the temperature uniformity.

[0073] Fourth embodiment

[0074] like Figure 6a , 6bAs shown, the rotating drum 53 is a hollow cylinder, connected to the rotating system, and supports the wafer tray 51 and the carrying ring 52, and is used to drive the two to rotate under the drive of the rotating system. The rotating drum 53 includes an annular support portion 530 located at the top, and the wafer tray 51 and the carrying ring 52 are both contact-supported on the support portion 530. Among them, the support portion 530 includes a first support portion 530a located on the radial inner side for supporting the wafer tray 51, and a second support portion 530b located on the radial outer side for supporting the carrying ring 52. Preferably, the top surface heights of the first support portion 530a and the second support portion 530b are the same, and the rotating drum 53 has a more regular shape, and the design and processing costs are lower.

[0075] The wafer tray 51 comprises a base plate 511 located in the central area, the top surface of which is provided with a wafer slot 510 for accommodating wafers; an annular hanging portion 512 extending radially outward from the base plate 511; and an annular edge portion 513 extending radially outward from the hanging portion 512. The bottom surface of the hanging portion 512 is lower than the bottom surface of the edge portion 513, the hanging portion 512 is contact-supported on the first supporting portion 530a, the bottom of the base plate 511 protrudes from the bottom surface of the hanging portion 512, and the first supporting portion 530a is adaptively sleeved on the outside of the bottom of the base plate 511 to limit the wafer tray 51. The edge portion 513 is located above the second supporting portion 530b, and an annular space for accommodating the carrying ring 52 is formed between the bottom surface of the edge portion 513, the top surface of the second supporting portion 530b and the outer wall of the hanging portion 512. The bottom surfaces of the hanging portion 512 and the edge portion 513 may also be made equal in height, and the top surface of the first support portion 530a may be higher than the top surface of the second support portion 530b, that is, the top of the first support portion 530a extends upward and protrudes from the top surface of the second support portion 530b, so that an annular space for accommodating the load-bearing ring 52 is formed between the bottom surface of the edge portion 513, the top surface of the second support portion 530b, and the outer wall of the first support portion 530a. Alternatively, the hanging portion 512 protrudes downward from the bottom surface of the edge portion 513, and the top of the first support portion 530a extends upward and protrudes from the top surface of the second support portion 530b, so that an annular space for accommodating the load-bearing ring 52 is formed between the bottom surface of the edge portion 513, the top surface of the second support portion 530b, and the outer wall of the hanging portion 512 and the first support portion 530a.

[0076] The carrying ring 52 has two functions: one is to form a thermal insulation layer around the wafer tray 51 to reduce the heat conduction between the outer wall of the wafer tray 51 and the low-temperature cold wall; the other is to realize the robot to carry the wafer tray 51 through the carrying ring 52. The carrying ring 52 includes a ring-shaped main body 521 and a supporting part 522 extending inward from the main body 521. Among them, the top surface of the main body 521 is at least higher than the bottom surface of the edge part 513 to form a thermal insulation layer between the wafer tray 51 and the cold wall 4, reducing the heat radiation from the side wall of the wafer tray 51 to the low-temperature cold wall 4. Preferably, the top surface of the main body 521 is not lower than the top surface of the wafer tray 51, so that the thermal insulation layer has a higher height, better wraps the side wall of the wafer tray 51, and has a better effect of reducing heat radiation. The outer diameter of the carrying ring 52 is larger than the outer diameter of the rotating drum 53, so that at least part of the bottom surface of the main body 521 is exposed as a robot supporting position 520. The supporting portion 522 is used to support the wafer tray 51, and is inserted into the annular space between the wafer tray 51 and the rotating drum 53, and at least part of the supporting portion 522 is located below the edge portion 513. The rotating drum 53 limits the bearing ring 52 through mutually matching limiting structures respectively arranged on the bottom surface of the bearing ring 52 and the top surface of the second supporting portion 530b. The limiting structure can be any limiting structure that can achieve horizontal relative fixation between the bearing ring 52 and the rotating drum 53 and is evenly distributed in the circumferential direction. For example, it can be a matching second annular step T2, T2' respectively arranged on the bottom surface of the bearing ring 52 and the top surface of the second supporting portion 530b, and the support and limiting of the bearing ring 52 are achieved through the cooperation of the two. It can be understood that the second annular steps T2, T2' arranged on the bottom surface of the bearing ring 52 and the top surface of the second supporting portion 530b can be deformed into a matching second annular inclined surface. Preferably, the second annular step T2 or the second annular slope of the second supporting portion 530b is arranged at the outer edge of the top surface thereof, so that the carrying ring 52 and the rotating drum 53 have a more regular shape, and the design and processing costs are lower.

[0077] There is a first gap between the carrying ring 52 and the wafer tray 51 to completely separate the two, so as to avoid the wafer tray 51 from directly conducting heat to the carrying ring 52, and prevent the edge area of ​​the wafer tray 51 from rapid heat dissipation. In this embodiment, the first gap includes a first longitudinal gap F1 located between the main body 521 and the edge portion 513, a transverse gap F2 located between the edge portion 513 and the supporting portion 522, and a second longitudinal gap F3 located between the supporting portion 522 and the substrate 511. When the robot takes the wafer, the robot lifts the carrying ring 52 from the robot supporting position 520. As the carrying ring 52 is lifted, the transverse gap F2 gradually disappears, and the supporting portion 522 of the carrying ring 52 fits with the edge portion 513 of the wafer tray 51. When the robot continues to lift, the carrying ring 52 drives the wafer tray 51 to rise. When the wafer tray 51 is completely separated from the rotating drum 53, it is transported out of the reaction chamber. Placing the wafer is a reverse process. The robot carries the supporting ring 52 to drive the wafer tray 51 down. When the wafer tray 51 is supported on the top surface of the rotating drum 53, the wafer tray 51 stops descending. The robot carries the supporting ring 52 to continue descending. The supporting ring 52 is separated from the wafer tray 51, and a first gap is formed between the two. The wafer is placed after continuing to descend until the supporting ring 52 is supported on the top surface of the rotating drum 53. Then, the robot is withdrawn.

[0078] Fifth embodiment

[0079] like Figure 7 As shown, the difference between the fifth embodiment and the fourth embodiment is that: the wafer tray 51 is not provided with a hanging part, and only includes a connected substrate 511 and an edge portion 513, the bottom of the substrate 511 protrudes from the bottom surface of the edge portion 513, and the substrate 511 is supported on the first support portion 530a. The bottom outer edge of the substrate 511 and the top inner edge of the first support portion 530a are respectively provided with matching first annular steps T1 and T1', which are used to achieve support and position limiting of the wafer tray 51 through the cooperation of the two. It can be understood that the first annular steps T1 and T1' provided on the bottom outer edge of the substrate 511 and the top inner edge of the first support portion 530a can be deformed into any structure that can limit the wafer tray 51. For example, it can be deformed into a matching first annular slope that tilts downward from the outside to the inside in the radial direction, which can achieve the same effect, and has a more regular appearance, and the design and processing costs are lower. In this embodiment, since the wafer tray 51 abandons the outwardly extending suspension portion, on the one hand, the area of ​​the wafer tray 51 that is not directly heated by the heater is reduced, and on the other hand, the reduction of the outwardly extending portion also greatly reduces the heat radiation dissipation in the edge area, thereby further reducing the radial temperature difference of the wafer tray 51 and improving temperature uniformity.

[0080] In the above embodiments, preferably, the first gap is not less than 0.1 mm and not more than 2.0 mm, and this distance range has a good temperature insulation effect.

[0081] In addition, the present invention also provides a vapor deposition device, including a reaction chamber and a rotating system penetrating into the chamber from the bottom of the reaction chamber, wherein the reaction chamber includes:

[0082] The wafer support structure of the present invention is connected to a rotation system, and the rotation system drives the wafer support structure to rotate;

[0083] A heater, disposed in the rotating drum 53 of the wafer support structure and below the wafer tray 51, for heating the wafer tray 51 and the wafers supported by the wafer tray 51;

[0084] An air inlet device for supplying process gas to above the wafer tray 51;

[0085] The exhaust device is located at the bottom of the reaction chamber and is used to exhaust process waste gas and control the vacuum degree of the reaction chamber;

[0086] The cold wall is arranged around the wafer support structure to reduce the direct radiation of high temperature to the wall of the reaction chamber.

[0087] In addition, the vapor deposition device further includes a robot for carrying the carrying ring 52 , the wafer tray 51 and the wafers thereon into and out of the reaction chamber.

[0088] The process of transporting the wafer into the reaction chamber is as follows: placing the wafer into the wafer slot 510 of the wafer tray 51 outside the chamber; moving the manipulator to make it abut against the manipulator supporting position 520 of the carrying ring 52, raising the manipulator to hold up the carrying ring 52 and make the top surface of the supporting portion 522 of the carrying ring 52 abut against the bottom surface of the edge portion 513 of the wafer tray 51, and continuing to raise the manipulator to hold up the wafer tray 51 and the wafer therein through the carrying ring 52; moving the manipulator into the reaction chamber so that the wafer tray 51 is located directly above the rotating drum 53; lowering the manipulator so that the wafer tray 51 is in contact with and supported on the rotating drum 53; the manipulator drives the carrying ring 52 to continue to descend so that the bottom surface of the carrying ring 52 is in contact with and supported on the second supporting portion 530b of the rotating drum 53; the manipulator continues to descend to detach from the manipulator supporting position 520 of the carrying ring 52, and moves the manipulator out of the chamber.

[0089] The process of transporting the wafer out of the reaction chamber is the reverse process, specifically: moving the robot into the reaction chamber and abutting against the robot supporting position 520 of the carrying ring 52; raising the robot to lift the carrying ring 52 to separate it from the drum 53; continuing to raise the carrying ring 52 so that the top surface of the supporting portion 522 abuts against the bottom surface of the edge portion 513 of the wafer tray 51, and continuing to raise the robot to lift the wafer tray 51 through the carrying ring 52 to separate the wafer tray 51 from the drum 53; and moving the robot out of the reaction chamber.

[0090] In the above embodiments, during the process, the heater directly heats the wafer tray 51 and the rotating drum 53, and there is no direct heat conduction between the wafer tray 51 and the carrying ring 52; the carrying ring 52 is in contact with the rotating drum 53, and the heat will be transferred from the rotating drum 53 to the carrying ring 52, thereby heating the carrying ring 52. At this time, the carrying ring 52 forms a protective layer between the cold wall and the wafer tray 51, so that the temperature distribution of the wafer tray 51 is more uniform, and the temperature difference is smaller, and the wafer tray will not crack due to the large temperature difference. At the same time, the carrying ring 52 is not directly heated by the heater, but only by the heat conduction of the rotating drum 53, and the carrying ring 52 itself is small in size and the temperature difference is small, so it is not easy to form cracks. In addition, the wafer tray 51 and the carrying ring 52 are both provided with a relative limiting structure with the rotating drum 53, which ensures that each component is concentric with the wafer and does not cause process eccentricity during high-speed rotation.

[0091] It is easy to understand that the present invention is not only applicable to chemical vapor deposition devices, but also applicable to other vapor deposition devices such as physical vapor deposition devices.

[0092] The above are only embodiments of the present invention and are not intended to limit the protection scope of the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and scope of the present invention are included in the protection scope of the present invention.

Claims

1. A wafer support structure for a vapor deposition device, characterized in that: include: A wafer tray, used for carrying wafers, the wafer tray comprising a substrate and an edge portion surrounding the substrate; A carrying ring is arranged around the wafer tray, the carrying ring comprises an annular main body and a supporting portion extending inwardly from the main body, at least part of the supporting portion is located below the edge portion, and the top surface of the main body is at least higher than the bottom surface of the edge portion; A rotating drum, the wafer tray and the carrying ring are both supported in contact with each other on the rotating drum, and a first gap is provided between the carrying ring and the wafer tray to completely separate the two; The outer diameter of the carrying ring is greater than the outer diameter of the drum.

2. The wafer support structure according to claim 1, characterized in that: The top surface of the main body is not lower than the top surface of the wafer tray.

3. The wafer support structure according to claim 1, characterized in that: The rotating drum comprises an annular supporting portion located at the top, and the wafer tray and the carrying ring are both supported in contact with the supporting portion.

4. The wafer support structure according to claim 3, characterized in that: The supporting portion includes a first supporting portion located radially inwardly for supporting the wafer tray, and a second supporting portion located radially outwardly for supporting the carrying ring.

5. The wafer support structure according to claim 4, characterized in that: The bottom of the substrate protrudes from the bottom surface of the edge portion, and the first supporting portion is sleeved on the outside of the bottom of the substrate to limit the wafer tray.

6. The wafer support structure according to claim 5, characterized in that: The wafer tray also includes a hanging portion arranged between the edge portion and the substrate, and the hanging portion is supported in contact with the first supporting portion; and a distance between a bottom surface of the edge portion and a top surface of the second supporting portion is greater than a height of the supporting portion.

7. The wafer support structure according to claim 6, characterized in that: The top surface of the first supporting portion is higher than the top surface of the second supporting portion.

8. The wafer support structure according to claim 7, characterized in that: The bottom surface of the hanging portion is at the same height as the bottom surface of the edge portion; or the bottom surface of the hanging portion is lower than the bottom surface of the edge portion.

9. The wafer support structure according to claim 6, characterized in that: The bottom surface of the hanging portion is lower than the bottom surface of the edge portion, and the top surfaces of the first supporting portion and the second supporting portion are at the same height.

10. The wafer support structure according to claim 5, characterized in that: The top of the first supporting portion and the bottom of the base plate are provided with a matching first limiting structure for limiting the position of the wafer tray.

11. The wafer support structure according to claim 10, characterized in that: The first limiting structure is an annular step or an annular inclined surface.

12. The wafer support structure according to claim 11, characterized in that: The top surfaces of the first supporting portion and the second supporting portion have the same top surface height.

13. The wafer support structure according to claim 7 or 8, characterized in that: The supporting portion is sleeved on the outside of the first supporting portion to limit the carrying ring.

14. The wafer support structure according to claim 13, characterized in that: The bottom surfaces of the main body and the supporting portion are at the same height.

15. The wafer support structure according to any one of claims 6 to 12, characterized in that: The bottom surface of the main body is lower than the bottom surface of the supporting part, and the bottom of the main body is sleeved on the outside of the second supporting part to limit the carrying ring.

16. The wafer support structure according to claim 7 or 8, characterized in that: The bottom surface of the main body is lower than the bottom surface of the supporting part, and the bottom of the main body is sleeved outside the second supporting part to limit the carrying ring; and a second gap is provided between the supporting part and the first supporting part to separate the two.

17. The wafer support structure according to any one of claims 6 to 12, characterized in that: The bottom surface of the main body and the top surface of the second supporting portion are provided with second limiting structures that cooperate with each other to limit the carrying ring.

18. The wafer support structure according to claim 17, characterized in that: The second limiting structure is an annular step or annular inclined surface that is matched with each other and is respectively arranged on the bottom surface of the main body and the top surface of the second supporting portion.

19. The wafer support structure according to claim 18, characterized in that: The second annular step or the second annular inclined surface of the second supporting portion is arranged on the outer edge of the top surface thereof.

20. The wafer support structure according to claim 1, wherein: The first gap is not less than 0.1 mm and not more than 2.0 mm.

21. A vapor deposition device, characterized in that: The invention comprises a reaction chamber and a rotating system penetrating into the chamber from the bottom of the reaction chamber, wherein the reaction chamber comprises: The wafer support structure according to any one of claims 1 to 20, wherein the wafer support structure is connected to the rotation system; A heater is disposed in the rotating drum of the wafer support structure and below the wafer tray; A gas inlet device for supplying process gas; The exhaust device is used to exhaust process waste gas and control the vacuum degree of the reaction chamber.

22. The vapor deposition apparatus according to claim 21, characterized in that: The reaction chamber also includes: A cold wall is arranged around the wafer support structure to reduce the direct radiation of high temperature to the wall surface of the reaction chamber.

23. The vapor deposition apparatus according to claim 21 or 22, characterized in that: Also includes: The robot is used to support the carrying ring of the wafer support structure, and to support and move the wafer tray into and out of the reaction chamber through the carrying ring.

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