A titanium plate etching method and device

Abstract

The present invention provides a titanium plate etching method and device. The method comprises: acquiring titanium plate data and target demand data; determining keywords based on the titanium plate data and the target demand data; determining target etching solution data based on the keywords and pre-stored etching solution data; determining etching parameters based on preset conditions, the target etching solution data, and the titanium plate data; and etching the target titanium plate according to the etching parameters. The present invention acquires titanium plate data and target demand data, thereby determining keywords, determining target etching solution data based on the keywords and pre-stored etching solution data, and then determining etching parameters based on preset conditions, the target etching solution data, and the titanium plate data. The target titanium plate is then etched according to the etching parameters. This method not only improves the accuracy of etching parameters during titanium plate etching, but also improves the efficiency of titanium plate etching and the satisfaction with the etching results.

Description

Technical Field

[0001] The present invention relates to the technical field of titanium plate etching, and also relates to a titanium plate etching method and device. Background Art

[0002] Titanium is an ideal material for PEM (proton exchange membrane) electrolyzers (PEM) due to its low density, excellent corrosion resistance, low initial resistivity, and good mechanical strength. Titanium etching allows precise formation of desired circuit patterns or shapes on titanium plates, meeting the specific requirements of PEM electrolyzers for bipolar plates and other structural components. However, existing titanium etching processes, due to inaccurate etching parameters, can result in uneven etching depths on the titanium plate surface, resulting in varying shades of color. This uneven etching reduces the product's aesthetics and affects its electrical conductivity, corrosion resistance, and other properties. Summary of the Invention

[0003] The technical problem to be solved by the present invention is to provide a titanium plate etching method and device to improve the accuracy of etching parameters when etching the titanium plate.

[0004] In order to solve the above technical problems, the technical solutions of the present invention are as follows:

[0005] A first aspect of the present invention provides a method for etching a titanium plate, comprising:

[0006] Obtain titanium plate data and target demand data;

[0007] Determining keywords based on the titanium plate data and the target demand data;

[0008] Determining target etching solution data according to the keyword and pre-stored etching solution data;

[0009] Determining etching parameters according to preset conditions, the target etching solution data and the titanium plate data;

[0010] The target titanium plate is etched according to the etching parameters.

[0011] Optionally, obtain titanium plate data, including:

[0012] Obtain the material data and thickness data of the titanium plate;

[0013] Titanium plate data is determined according to the material data and the thickness data.

[0014] Optionally, obtain target demand data, including:

[0015] Obtaining etching pattern data, etching depth data, accuracy data and usage data;

[0016] Target requirement data is determined based on the etching pattern data, the etching depth data, the precision data, and the usage data.

[0017] Optionally, keywords are determined based on the titanium plate data and the target demand data, including:

[0018] Obtaining the chemical composition of the titanium plate according to the titanium plate data;

[0019] Obtaining an etching pattern and etching depth according to the target requirement data;

[0020] Keywords are determined based on the chemical composition of the titanium plate, the etching pattern, and the etching depth.

[0021] Optionally, determining target etching solution data according to the keyword and pre-stored etching solution data includes:

[0022] Obtain pre-stored etching solution data;

[0023] Searching the pre-stored etching solution data according to the keyword to obtain the etching solution type, etching solution concentration and etching solution temperature;

[0024] Target etching liquid data is determined according to the etching liquid type, the etching liquid concentration, and the etching liquid temperature.

[0025] Optionally, determining etching parameters according to preset conditions, the target etching solution data, and the titanium plate data includes:

[0026] Get the preset conditions;

[0027] Determining an etching parameter prediction model according to the preset conditions;

[0028] Etching parameters are obtained according to the target etching solution data, the titanium plate data and the etching parameter prediction model.

[0029] Optionally, etching the target titanium plate according to the etching parameters includes:

[0030] Get etching equipment data;

[0031] Adjusting the etching parameters according to the etching equipment data to obtain adjusted etching parameters;

[0032] determining a target format according to the etching equipment data;

[0033] Performing format conversion on the adjusted etching parameters according to the target format to obtain etching process parameters;

[0034] According to the etching process parameters, the target titanium plate is placed in an etching device for etching.

[0035] A second aspect of the present invention provides an etching device for a titanium plate, comprising:

[0036] Acquisition module, used to acquire titanium plate data and target demand data;

[0037] The processing module is used to determine keywords based on the titanium plate data and the target demand data; determine target etching liquid data based on the keywords and pre-stored etching liquid data; determine etching parameters based on preset conditions, the target etching liquid data and the titanium plate data; and perform etching processing on the target titanium plate according to the etching parameters.

[0038] According to a third aspect of the present invention, a computing device is provided, comprising: a processor and a memory storing a computer program, wherein when the computer program is executed by the processor, the method according to the first aspect is executed.

[0039] A fourth aspect of the present invention provides a computer-readable storage medium storing instructions, which, when executed on a computer, causes the computer to execute the method described in the first aspect.

[0040] The above solution of the present invention includes at least the following beneficial effects:

[0041] The above-mentioned scheme of the present invention obtains titanium plate data and target demand data, and then determines keywords, determines target etching liquid data through keywords and pre-stored etching liquid data, and then determines etching parameters based on preset conditions, target etching liquid data and titanium plate data. The target titanium plate is etched according to the etching parameters, which can not only improve the accuracy of etching parameters when etching the titanium plate, but also improve the working efficiency of titanium plate etching and the satisfaction with the etching results. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] Figure 1 1 is a schematic flow chart of a titanium plate etching method according to an embodiment of the present invention;

[0043] Figure 2 Schematic diagram of the structure of the titanium plate etching device in an embodiment of the present invention. DETAILED DESCRIPTION

[0044] Exemplary embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present invention are shown in the accompanying drawings, it should be understood that the present invention can be implemented in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided to enable a more thorough understanding of the present invention and to fully convey the scope of the present invention to those skilled in the art.

[0045] like Figure 1As shown, an embodiment of the present invention provides a method for etching a titanium plate, comprising the following steps:

[0046] Step 101, obtaining titanium plate data and target demand data;

[0047] Step 102, determining keywords based on the titanium plate data and the target demand data;

[0048] Step 103, determining target etching solution data according to the keyword and pre-stored etching solution data;

[0049] Step 104, determining etching parameters according to preset conditions, the target etching solution data, and the titanium plate data;

[0050] Step 105 , etching the target titanium plate according to the etching parameters.

[0051] The titanium plate etching method of the embodiment of the present invention obtains titanium plate data and target demand data, and then determines keywords, determines target etching liquid data through keywords and pre-stored etching liquid data, and then determines etching parameters based on preset conditions, target etching liquid data and titanium plate data. The target titanium plate is etched according to the etching parameters, which can not only improve the accuracy of the etching parameters when etching the titanium plate, but also improve the work efficiency of titanium plate etching and the satisfaction with the etching results.

[0052] In an optional embodiment of the present invention, obtaining titanium plate data in step 101 includes:

[0053] Step 1011, obtaining material data and thickness data of the titanium plate;

[0054] Specifically, the material data of the titanium plate mainly refers to the material type of the titanium plate, such as pure titanium or titanium alloy (such as Ti-6Al-4V). Based on the material data of the titanium plate, the chemical composition, physical properties and mechanical properties of the titanium plate can be determined later, which facilitates the selection of appropriate etching solution and etching parameters based on the material data. The thickness data of the titanium plate refers to the thickness of the titanium plate, which facilitates the subsequent determination of etching parameters and ensures that the etching solution can act evenly on the entire surface of the titanium plate to improve the etching effect. Here, the size data of the titanium plate, such as length, width, etc., can also be obtained, and the shape data of the titanium plate can also be obtained.

[0055] Step 1012: Determine titanium plate data based on the material data and the thickness data.

[0056] Specifically, the titanium plate data includes material data and thickness data of the titanium plate, and may also include size data of the titanium plate, such as length, width, etc., and shape data of the titanium plate, etc.

[0057] In an optional embodiment of the present invention, obtaining target demand data in step 101 includes:

[0058] Step 1013, obtaining etching pattern data, etching depth data, precision data and usage data;

[0059] Specifically, when etching the titanium plate, it is necessary to etch according to the specific needs of the user. The user's needs can be expressed in terms of etching pattern, etching depth, etching accuracy, and the purpose of the titanium plate after etching. These data can be provided by the user so that the etching parameters can be determined according to the specific user's needs in the future, thereby improving user satisfaction with the etching of the titanium plate.

[0060] Step 1014 : determining target requirement data based on the etching pattern data, the etching depth data, the precision data, and the usage data.

[0061] Specifically, the target requirement data may include etching pattern data, etching depth data, precision data, and usage data.

[0062] In an optional embodiment of the present invention, step 102 includes:

[0063] Step 1021, obtaining the chemical composition of the titanium plate according to the titanium plate data;

[0064] Specifically, the titanium plate data includes the material data of the titanium plate. The chemical composition of the titanium plate can be obtained based on the material data of the titanium plate. For example, if the material data of the titanium plate is pure titanium, the chemical composition of the titanium plate is titanium with a purity of more than 99.5%. Based on the chemical composition of the titanium plate, it is convenient to subsequently select the appropriate chemical composition of the etching solution to etch the titanium plate, thereby improving etching efficiency and effect.

[0065] Step 1022, obtaining an etching pattern and etching depth according to the target requirement data;

[0066] Specifically, the target demand data is some requirements of the user for etching titanium plates, mainly including etching pattern data, etching depth data, accuracy data and usage data, etc. Therefore, the etching pattern and etching depth can be directly extracted from the target demand data. The etching pattern and etching depth will affect the subsequent selection of etching solution and the determination of etching parameters.

[0067] Step 1023 : determining keywords based on the chemical composition of the titanium plate, the etching pattern, and the etching depth.

[0068] Specifically, the purpose of determining keywords is to facilitate subsequent search for corresponding etching solution data from pre-stored etching solution data. Keywords can be extracted from the chemical composition, etching pattern, and etching depth of the titanium plate. For example, in a specific embodiment, keywords may include: the chemical composition of the titanium plate (e.g., titanium with a purity of greater than 99.5%), etching pattern (e.g., the type, accuracy, and complexity of the etching pattern, lines, or structures), and etching depth (e.g., 2 mm).

[0069] In an optional embodiment of the present invention, step 103 includes:

[0070] Step 1031, obtaining pre-stored etching solution data;

[0071] Specifically, historical etching solution data can be obtained from historical titanium plate etching processes. This data can include different etching solution data corresponding to various titanium plate chemical compositions (such as titanium and titanium alloys with a purity of 99.5% or higher), various etching pattern line or structure types, various precisions and complexities, and various etching depths. Etching solution data also includes etching solution type, etching solution concentration, and etching solution temperature. For example, for titanium alloy, a circular etching pattern, 90% precision, and an etching depth of 2mm, the corresponding etching solution data includes: nitric acid, 75% concentration, and 45°C. The above is merely an example; specific historical etching solution data needs to be stored based on the recorded data from the actual etching process. Storing historical etching solution data in an etching solution database facilitates subsequent keyword searches, not only improving the efficiency of identifying target etching solution data, but also helping to predict etching results and improve etching efficiency by selecting target etching solution data based on historical experience.

[0072] Step 1032, searching the pre-stored etching solution data according to the keyword to obtain the etching solution type, etching solution concentration, and etching solution temperature;

[0073] Specifically, etching solution data that matches the keyword is searched from pre-stored etching solution data according to the keyword, where the etching solution data includes etching solution type, etching solution concentration, etching solution temperature, and the like.

[0074] Step 1033 : determining target etching solution data according to the etching solution type, etching solution concentration, and etching solution temperature.

[0075] Specifically, the target etching solution data will serve as an important basis for selecting etching solution when etching the titanium plate subsequently. The target etching solution data includes etching solution type, etching solution concentration, etching solution temperature, etc.

[0076] In an optional embodiment of the present invention, step 104 includes:

[0077] Step 1041, obtaining preset conditions;

[0078] Specifically, the preset conditions may include: the etching rate is proportional to the etching solution concentration and the temperature. The purpose of obtaining the preset conditions is to determine an etching parameter prediction model so that the etching parameters can be quickly calculated based on the determined etching parameter prediction model. Depending on the actual situation, different preset conditions can be obtained to determine an etching parameter prediction model that meets the needs of the actual scenario, thereby improving the adaptability and accuracy of etching parameter calculation.

[0079] Step 1042, determining an etching parameter prediction model according to the preset conditions;

[0080] Specifically, under preset conditions, the etching parameter prediction model that can be determined may include any of the following:

[0081] (1) V = k × C × T × t -n , where V is the etching rate, which refers to the reduction in thickness of the etched material per unit time; k is a constant representing the relative relationship between the etching rate and the etching solution concentration and temperature; C is the etching solution concentration; T is the etching solution temperature; t is the etching time; and n is an exponent representing the degree to which the etching rate changes over time. The etching solution concentration and temperature can be obtained from the target etching solution data.

[0082] (2) Etching selectivity = etching rate / etching rate of mask material. The etching selectivity refers to the ratio of the etching rate of the titanium plate to the etching rate of the mask material during the etching process.

[0083] (3) Where V is the etching rate, Δd is the thickness of the titanium plate, and t is the etching time.

[0084] (4) h = V × t, where h is the etching depth, V is the etching rate, and t is the etching time.

[0085] (5) Where t is the etching time, h is the etching depth, and V is the etching rate.

[0086] In a specific embodiment, the etching rate of the titanium plate being etched is 50 nm / min, while the etching rate of the mask material is 5 nm / min. The etching selectivity ratio is: etching selectivity ratio = 50 nm / min / 5 nm / min = 10. This means that the etching rate of the titanium plate is 10 times that of the mask material, which helps protect the mask material during the etching process and ensures etching accuracy.

[0087] Step 1043 , obtaining etching parameters according to the target etching solution data, the titanium plate data, and the etching parameter prediction model.

[0088] Specifically, etching parameters include: the target etching solution data, including the type, concentration, and temperature of the etching solution; the titanium plate data, including thickness, length, width, and shape; and the etching parameter prediction model outputs, including etching rate, depth, time, and selectivity. Obtaining these etching parameters facilitates subsequent etching of the titanium plate based on these parameters, improving etching efficiency and accuracy.

[0089] In an optional embodiment of the present invention, step 105 includes:

[0090] Step 1051, obtaining etching equipment data;

[0091] Specifically, etching equipment data may include: etching equipment type, model, brand, etching rate, etc. The acquisition of these etching equipment data is for subsequent adjustment of etching parameters to suit the actual etching scenario, improve etching efficiency and effect, and increase product qualification rate.

[0092] Step 1052, adjusting the etching parameters according to the etching equipment data to obtain adjusted etching parameters;

[0093] Specifically, the etching rate in the etching parameters can be adjusted according to the etching rate in the etching equipment data. For example, if the etching rate in the etching parameters is 21 μm / min, and the etching rate in the etching equipment data is 5-20 μm / min, the etching rate in the adjusted etching parameters can be 20 μm / min to meet the working requirements of the etching equipment and achieve the expected etching effect. The adjustment of other parameters is similar and will not be repeated here.

[0094] In a specific embodiment, a wet etching device is used to etch a titanium plate with a thickness of 1 mm, with the goal of etching a line pattern with a depth of 0.1 mm and a width of 0.5 mm on the titanium plate; the etching parameters include: etching time of 60 seconds, etching rate of 10 μm / min, etching liquid flow rate of 50 L / min, and pressure of 0.3 MPa. A standard titanium plate (a plate made of titanium or titanium alloy as the main raw material, through smelting, rolling and other processes, and its various performance indicators meet the relevant standards) can be used for equipment calibration to ensure that the etching accuracy is ±0.01 mm. Etching tests are performed according to the etching parameters. If it is found that the etching depth is shallow and the line width is large, the etching parameters can be adjusted, such as extending the etching time to 90 seconds to increase the etching depth, reducing the etching rate to 8 μm / min to reduce the line width, and keeping the etching liquid flow rate and pressure unchanged; the titanium plate required for the final product is used for etching verification, and the etching depth and line width are measured. It is found that the etching depth is 0.1 mm and the line width is 0.5 mm, which meets the requirements. The adjusted etching parameters are etching time 90 seconds, etching rate 8 μm / min, etching solution flow rate 50 L / min, and pressure 0.3 MPa.

[0095] Step 1053, determining a target format according to the etching equipment data;

[0096] Specifically, the format that can be recognized by the etching equipment type in the etching equipment data, that is, the target format, can be determined. The purpose of determining the target format is to facilitate the conversion of the adjusted etching parameters according to the target format to obtain etching process parameters that meet the input or can be recognized by the etching equipment, thereby improving work efficiency.

[0097] Step 1054: converting the adjusted etching parameters into a target format to obtain etching process parameters.

[0098] Specifically, the adjusted etching parameters are converted into etching process parameters in a target format to meet the input requirements of the etching equipment, thereby improving control efficiency and process production efficiency.

[0099] Step 1055: Place the target titanium plate into an etching device for etching according to the etching process parameters.

[0100] Specifically, the etching process parameters are input into the etching equipment and converted into control parameters of the etching equipment, so that the etching equipment etches the target titanium plate according to the etching process parameters.

[0101] A specific embodiment of the titanium plate etching method according to the embodiment of the present invention includes:

[0102] Step 111, obtaining data;

[0103] The data obtained mainly include the material data and thickness data of the titanium plate, etching pattern data, etching depth data, accuracy data and usage data, etc. The acquisition of this data helps in the subsequent selection of etching solution and determination of etching parameters.

[0104] Step 112, determining keywords;

[0105] Keywords can be extracted from the acquired data according to preset templates, such as the chemical composition, etching pattern and etching depth of the titanium plate.

[0106] Step 113, determining target etching solution data;

[0107] According to the keyword, etching solution data consistent with the keyword is searched from the pre-stored etching solution data, such as etching solution type, etching solution concentration, etching solution temperature, etc., as target etching solution data.

[0108] Step 114, determining etching parameters;

[0109] The etching parameter prediction model can be used to determine the etching rate, etching depth, etching time, etching selectivity, etc., and together with the etching liquid type, etching liquid concentration, and etching liquid temperature in the target etching liquid data, and the titanium plate thickness, titanium plate length, titanium plate width, and titanium plate shape in the titanium plate data, they are used as etching parameters to etch the target titanium plate.

[0110] Step 115 , etching the target titanium plate according to etching parameters.

[0111] The etching parameters are adjusted and format converted according to the type, model, brand, etching rate, etc. of the selected etching equipment, and then the obtained etching process parameters are input into the etching equipment and converted into the control parameters of the etching equipment, so that the etching equipment etches the target titanium plate according to the etching process parameters.

[0112] The titanium plate etching method of the embodiment of the present invention accurately calculates the etching parameters and then inputs the obtained etching process parameters into the etching equipment to perform etching treatment on the target titanium plate, which not only makes the etching of the titanium plate meet the expected requirements but also improves the etching efficiency.

[0113] like Figure 2 As shown, an embodiment of the present invention provides an etching device 200 for a titanium plate, comprising:

[0114] Acquisition module 201, used to acquire titanium plate data and target demand data;

[0115] The processing module 202 is used to determine keywords based on the titanium plate data and the target demand data; determine target etching solution data based on the keywords and pre-stored etching solution data; determine etching parameters based on preset conditions, the target etching solution data and the titanium plate data; and perform etching processing on the target titanium plate according to the etching parameters.

[0116] Optionally, obtain titanium plate data, including:

[0117] Obtain the material data and thickness data of the titanium plate;

[0118] Titanium plate data is determined according to the material data and the thickness data.

[0119] Optionally, obtain target demand data, including:

[0120] Obtaining etching pattern data, etching depth data, accuracy data and usage data;

[0121] Target requirement data is determined based on the etching pattern data, the etching depth data, the precision data, and the usage data.

[0122] Optionally, keywords are determined based on the titanium plate data and the target demand data, including:

[0123] Obtaining the chemical composition of the titanium plate according to the titanium plate data;

[0124] Obtaining an etching pattern and etching depth according to the target requirement data;

[0125] Keywords are determined based on the chemical composition of the titanium plate, the etching pattern, and the etching depth.

[0126] Optionally, determining target etching solution data according to the keyword and pre-stored etching solution data includes:

[0127] Obtain pre-stored etching solution data;

[0128] Searching the pre-stored etching solution data according to the keyword to obtain the etching solution type, etching solution concentration and etching solution temperature;

[0129] Target etching liquid data is determined according to the etching liquid type, the etching liquid concentration, and the etching liquid temperature.

[0130] Optionally, determining etching parameters according to preset conditions, the target etching solution data, and the titanium plate data includes:

[0131] Get the preset conditions;

[0132] Determining an etching parameter prediction model according to the preset conditions;

[0133] Etching parameters are obtained according to the target etching solution data, the titanium plate data and the etching parameter prediction model.

[0134] Optionally, etching the target titanium plate according to the etching parameters includes:

[0135] Get etching equipment data;

[0136] Adjusting the etching parameters according to the etching equipment data to obtain adjusted etching parameters;

[0137] determining a target format according to the etching equipment data;

[0138] Performing format conversion on the adjusted etching parameters according to the target format to obtain etching process parameters;

[0139] According to the etching process parameters, the target titanium plate is placed in an etching device for etching.

[0140] The titanium plate etching device of the embodiment of the present invention obtains titanium plate data and target demand data, and then determines keywords. The target etching liquid data is determined through the keywords and pre-stored etching liquid data. Then, the etching parameters are determined according to preset conditions, target etching liquid data and titanium plate data. The target titanium plate is etched according to the etching parameters. This can not only improve the accuracy of the etching parameters when etching the titanium plate, but also improve the working efficiency of titanium plate etching and the satisfaction with the etching results.

[0141] It should be noted that the device is a device corresponding to the above method, and all implementations in the above method embodiment are applicable to the embodiment of the device and can achieve the same technical effects, which will not be described in detail in this embodiment.

[0142] An embodiment of the present invention further provides a computing device comprising: a processor and a memory storing a computer program. When the computer program is executed by the processor, the computer program performs the method described in any of the above embodiments. All implementations in the above method embodiments are applicable to the embodiments of this device and can achieve the same technical effects. These are not further described in this embodiment.

[0143] An embodiment of the present invention further provides a computer-readable storage medium storing instructions that, when executed on a computer, cause the computer to perform the method described in any of the above embodiments. All implementations in the above method embodiments are applicable to the embodiments of the device and can achieve the same technical effects. These are not further described in this embodiment.

[0144] It should be noted that, in the apparatus and method of the present invention, it is apparent that each component or step can be decomposed and / or recombined. Such decomposition and / or recombination should be considered equivalent solutions of the present invention. Furthermore, the steps of performing the above series of processes can naturally be performed in chronological order according to the order described, but do not necessarily need to be performed in chronological order. Certain steps can be performed in parallel, interleaved, or independently of each other.

[0145] It should be noted that, in the above embodiments, the terms "comprise", "include" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the sentence "comprises a ..." does not exclude the presence of other identical elements in the process, method, article or device comprising the element. In addition, it should be pointed out that the scope of the methods and devices in the implementation methods of the above embodiments is not limited to performing functions in the order shown or discussed, and may also include performing functions in a substantially simultaneous manner or in the opposite order according to the functions involved. For example, the described method may be performed in an order different from that described, and various steps may also be added, omitted, or combined. In addition, the features described with reference to certain examples may be combined in other examples.

[0146] The above is a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present invention. These improvements and modifications should also be regarded as within the scope of protection of the present invention.

Claims

1. A method for etching a titanium plate, characterized in that: include: Obtain titanium plate data and target demand data; Determining keywords based on the titanium plate data and the target demand data; Determining target etching solution data according to the keyword and pre-stored etching solution data; Determining etching parameters according to preset conditions, the target etching solution data and the titanium plate data; Etching the target titanium plate according to the etching parameters; Wherein, determining the target etching solution data according to the keyword and the pre-stored etching solution data includes: Obtaining pre-stored etching solution data; the pre-stored etching solution data includes: different etching solution data corresponding to the chemical composition of various titanium plates, the types of lines or structures of various etching patterns, various precisions and complexities, and various etching depths, and the etching solution data includes etching solution type, etching solution concentration, and etching solution temperature; Searching the pre-stored etching solution data according to the keyword to obtain the etching solution type, etching solution concentration and etching solution temperature; Determining target etching solution data according to the etching solution type, the etching solution concentration, and the etching solution temperature; Wherein, determining etching parameters according to preset conditions, the target etching solution data and the titanium plate data includes: Obtaining preset conditions; the preset conditions include: the etching rate is proportional to the etching solution concentration and the temperature; According to the preset conditions, an etching parameter prediction model is determined; the etching parameter prediction model includes any one of the following: , where V is the etching rate; k is a constant, C is the concentration of the etching solution, T is the temperature of the etching solution, t is the etching time, and n is an index that indicates the degree to which the etching rate changes with time; Etching selectivity = etching rate / etching rate of mask material. Etching selectivity refers to the ratio of the etching rate of the titanium plate to the etching rate of the mask material during the etching process. , where V is the etch rate, is the thickness of the titanium plate, t is the etching time; , where h is the etching depth, V is the etching rate, and t is the etching time; , where t is the etching time, h is the etching depth, and V is the etching rate; Etching parameters are obtained according to the target etching solution data, the titanium plate data and the etching parameter prediction model.

2. The titanium plate etching method according to claim 1, characterized in that: Get titanium plate data, including: Obtain the material data and thickness data of the titanium plate; Titanium plate data is determined according to the material data and the thickness data.

3. The method for etching a titanium plate according to claim 1, wherein: Obtain target demand data, including: Obtaining etching pattern data, etching depth data, accuracy data and usage data; Target requirement data is determined based on the etching pattern data, the etching depth data, the precision data, and the usage data.

4. The method for etching a titanium plate according to claim 1, wherein: According to the titanium plate data and the target demand data, keywords are determined, including: Obtaining the chemical composition of the titanium plate according to the titanium plate data; Obtaining an etching pattern and etching depth according to the target requirement data; Keywords are determined based on the chemical composition of the titanium plate, the etching pattern, and the etching depth.

5. The method for etching a titanium plate according to claim 1, wherein: The target titanium plate is etched according to the etching parameters, including: Get etching equipment data; Adjusting the etching parameters according to the etching equipment data to obtain adjusted etching parameters; determining a target format according to the etching equipment data; Performing format conversion on the adjusted etching parameters according to the target format to obtain etching process parameters; According to the etching process parameters, the target titanium plate is placed in an etching device for etching.

6. A titanium plate etching device, characterized in that: include: Acquisition module, used to acquire titanium plate data and target demand data; A processing module, configured to determine keywords based on the titanium plate data and the target demand data; and determine target etching solution data based on the keywords and pre-stored etching solution data; Determining etching parameters according to preset conditions, the target etching solution data and the titanium plate data; Etching the target titanium plate according to the etching parameters; Wherein, determining the target etching solution data according to the keyword and the pre-stored etching solution data includes: Obtaining pre-stored etching solution data; the pre-stored etching solution data includes: different etching solution data corresponding to the chemical composition of various titanium plates, the types of lines or structures of various etching patterns, various precisions and complexities, and various etching depths, and the etching solution data includes etching solution type, etching solution concentration, and etching solution temperature; Searching the pre-stored etching solution data according to the keyword to obtain the etching solution type, etching solution concentration and etching solution temperature; Determining target etching solution data according to the etching solution type, the etching solution concentration, and the etching solution temperature; Wherein, determining etching parameters according to preset conditions, the target etching solution data and the titanium plate data includes: Obtaining preset conditions; the preset conditions include: the etching rate is proportional to the etching solution concentration and the temperature; According to the preset conditions, an etching parameter prediction model is determined; the etching parameter prediction model includes any one of the following: , where V is the etching rate; k is a constant, C is the concentration of the etching solution, T is the temperature of the etching solution, t is the etching time, and n is an index that indicates the degree to which the etching rate changes with time; Etching selectivity = etching rate / etching rate of mask material. Etching selectivity refers to the ratio of the etching rate of the titanium plate to the etching rate of the mask material during the etching process. , where V is the etch rate, is the thickness of the titanium plate, t is the etching time; , where h is the etching depth, V is the etching rate, and t is the etching time; , where t is the etching time, h is the etching depth, and V is the etching rate; Etching parameters are obtained according to the target etching solution data, the titanium plate data and the etching parameter prediction model.

7. A computing device, characterized in that include: A processor and a memory storing a computer program, wherein when the computer program is executed by the processor, the method according to any one of claims 1 to 5 is performed.

8. A computer-readable storage medium, characterized in that The device stores instructions, which, when executed on a computer, enable the computer to execute the method according to any one of claims 1 to 5.

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