Automatic SRAF exposure development inhibition method and device, medium, program product and terminal

Abstract

The invention provides an automatic SRAF exposure development suppression method and device, a medium, a program product and a terminal, and aims to optimize an SRAF placement area when an interference pattern is detected in an initial exposure pattern through a multi-round iterative optimization technical means, and when a new exposure pattern meets a preset termination condition, the iterative optimization operation is ended, so that the SRAF exposure development is suppressed. Therefore, the problems of time waste and flow complexity caused by redesigning the SRAF placement rule in the traditional method are solved. According to the method, the original spatial position of the SRAF is kept, the enhancement effect on the resolution of the main graph is guaranteed to the maximum extent, and the definition and precision of the graph are improved, so that the production efficiency is improved, the manufacturing process is simplified, and a more convenient solution is provided for practical application.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing, and in particular to an automatic SRAF exposure and imaging suppression method, device, medium, program product and terminal. Background Art

[0002] In modern semiconductor manufacturing, the introduction of sub-resolution scattering strips (SRAF, Sub-Resolution Assistant Feature) has become an important means to improve the resolution of chip layout. The main function of SRAF is to enhance the depth of focus of the lithography process and improve the clarity and consistency of imaging during the exposure process by placing auxiliary features smaller than the resolution of the lithography machine in specific areas of the chip design. The basic principle is to use SRAF to change the interference pattern of light, so that even in the face of process changes during the lithography process, it can still maintain a high imaging quality and production yield.

[0003] However, there are still some obvious defects and challenges in the application of SRAF in the existing technology. First, the placement of SRAF needs to follow certain design rules and strategies. An unreasonable SRAF position may lead to poor exposure in the photolithography process. If the interference between the SRAF pattern and the main pattern is not effectively controlled, unexpected exposure results may occur, which will affect the final chip design image and cause its actual performance to deviate from the design expectations.

[0004] In addition, although the purpose of SRAF is to not transfer images on silicon wafers, in actual process operation, its influence on surrounding lighting conditions may lead to unexpected imaging effects. Especially in highly integrated and dense chip design, the placement and shape of SRAF will directly affect the interference effect between patterns. If not handled properly, the designed image may eventually lose its original structure and characteristics. Summary of the invention

[0005] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide an automatic SRAF exposure and imaging suppression method, device, medium, program product and terminal, which are used to solve the problem that the existing sub-resolution scattering strip (SRAF) technology may cause accidental exposure when the placement position is unreasonable, affecting the clarity and feature consistency of the chip design, thereby failing to effectively guarantee the expected effect of the lithography process.

[0006] To achieve the above-mentioned purpose and other related purposes, the first aspect of the present invention provides an automatic SRAF exposure development suppression method, comprising: executing an exposure simulation algorithm for a mask plate configured with SRAF to generate an initial exposure pattern; detecting an interference pattern in the initial exposure pattern through a matching algorithm, and if an interference pattern is detected, performing multiple rounds of iterative optimization operations on the SRAF placement area; after each round of iterative optimization operation, re-executing the exposure simulation algorithm based on the mask plate configured with the optimized SRAF to generate a new exposure pattern; when the new exposure pattern meets a preset termination condition, terminating the iterative optimization operation.

[0007] In some embodiments of the first aspect of the present invention, the process of performing multiple rounds of iterative optimization operations on the SRAF placement area includes: determining whether the interference pattern overlaps with the SRAF placement area; if the interference pattern coordinates overlap with the SRAF placement area, extracting a first area to be optimized from the SRAF placement area; otherwise, extracting a second area to be optimized from the SRAF placement area; and performing multiple rounds of iterative optimization operations on the first area to be optimized / the second area to be optimized.

[0008] In some embodiments of the first aspect of the present invention, the process of extracting the first area to be optimized from the SRAF placement area includes: obtaining the overlapping area between the interference graphic coordinates and the SRAF placement area; extracting the minimum circumscribed rectangle containing the overlapping area to generate the first area to be optimized.

[0009] In some embodiments of the first aspect of the present invention, the process of extracting the second area to be optimized from the SRAF placement area includes: extracting the SRAF placement area that is closest to the interference pattern; vertically projecting the interference pattern to the SRAF placement area that is closest to the interference pattern to generate a projection length; extracting the longest width of the nearest SRAF placement area in the projection direction; and generating the second area to be optimized in the nearest SRAF placement area based on the projection length and the longest width.

[0010] In some embodiments of the first aspect of the present invention, the shape of the first area to be optimized / the second area to be optimized is a rectangle, and the process of performing multiple rounds of iterative optimization operations on the first area to be optimized / the second area to be optimized includes: taking the center point of the first area to be optimized / the second area to be optimized as a reference, shortening the long sides and short sides of the first area to be optimized / the second area to be optimized, and translating the shortened long and short sides toward the center point to form an area to be removed; in the SRAF placement area, excavating the area to be removed to generate an optimized SRAF.

[0011] In some embodiments of the first aspect of the present invention, the preset termination condition includes one or more of the following: the quality index of the new exposure pattern meets the preset standard; the multiple rounds of iterative optimization operations reach the maximum number of iterations; the new exposure pattern does not contain interference patterns.

[0012] To achieve the above-mentioned purpose and other related purposes, the second aspect of the present invention provides an automatic SRAF exposure and imaging suppression device, including: a simulation exposure module: used to execute an exposure simulation algorithm for a mask plate configured with SRAF to generate an initial exposure pattern; after each round of iterative optimization operation, based on the optimized SRAF, the exposure simulation operation is performed again on the mask plate to generate a new exposure pattern; an interference detection and optimization module: used to detect interference patterns in the initial exposure pattern through a matching algorithm, and if an interference pattern is detected, multiple rounds of iterative optimization operations are performed on the SRAF placement area; a termination condition checking module: used to end the iterative optimization operation when the new exposure pattern meets the preset termination condition.

[0013] To achieve the above-mentioned object and other related objects, the third aspect of the present invention provides a computer-readable storage medium having a computer program stored thereon, and when the computer program is executed by a processor, the automatic SRAF exposure development suppression method is implemented.

[0014] To achieve the above-mentioned purpose and other related purposes, the fourth aspect of the present invention provides a computer program product, which includes a computer program code. When the computer program code runs on a computer, the computer implements the automatic SRAF exposure imaging suppression method.

[0015] To achieve the above-mentioned purpose and other related purposes, the fifth aspect of the present invention provides an electronic terminal, including a memory, a processor and a computer program stored in the memory; the processor executes the computer program to implement the automatic SRAF exposure imaging suppression method.

[0016] As described above, the automatic SRAF exposure and development suppression method, device, medium, program product and terminal of the present invention have the following beneficial effects: First, it can save a lot of time without redesigning the placement rules of SRAF. This feature makes the entire process more efficient and reduces the workload required in the optimization and simulation stages. Secondly, the method maintains the original spatial position of SRAF, fully utilizes the advantages of existing designs, and avoids potential impacts caused by position changes. In addition, by effectively minimizing the hollowed-out SRAF area, it ensures that the SRAF has the maximum effect on the resolution enhancement of the main graphic. This optimization not only improves the clarity and accuracy of the graphics, but also helps to improve production efficiency and reduce the complexity of the manufacturing process. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 A flow chart of an embodiment of the automatic SRAF exposure and imaging suppression method of the present invention is shown.

[0018] Figure 2 A schematic diagram of the process of optimizing the first layout area in an embodiment of the automatic SRAF exposure and imaging suppression method of the present invention is shown.

[0019] Figure 3 A schematic diagram of the process of optimizing the second layout area in an embodiment of the automatic SRAF exposure and imaging suppression method of the present invention is shown.

[0020] Figure 4 A flow chart of another embodiment of the present invention is shown.

[0021] Figure 5 A flow chart showing another embodiment of the automatic SRAF exposure development suppression method of the present invention is shown.

[0022] Figure 6 The figure shows the mask layout before optimization of an embodiment of the automatic SRAF exposure and imaging suppression method of the present invention.

[0023] Figure 7 The exposure graph before optimization of an embodiment of the automatic SRAF exposure and imaging suppression method of the present invention is shown.

[0024] Figure 8 The optimized mask layout of an embodiment of the automatic SRAF exposure and imaging suppression method of the present invention is shown.

[0025] Fig. 9 The optimized exposure graph of an embodiment of the automatic SRAF exposure and imaging suppression method of the present invention is shown.

[0026] Fig.10 A schematic structural diagram of an embodiment of an automatic SRAF exposure and development suppression device of the present invention is shown.

[0027] Fig.11 A schematic structural diagram of an embodiment of an automatic SRAF exposure and imaging suppression terminal of the present invention is shown. DETAILED DESCRIPTION

[0028] The following describes the embodiments of the present invention by specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that the following embodiments and features in the embodiments can be combined with each other without conflict.

[0029] Before further describing the present invention in detail, the nouns and terms involved in the embodiments of the present invention are explained. The nouns and terms involved in the embodiments of the present invention are applicable to the following interpretations:

[0030] <1> SRAF: SRAF refers to auxiliary patterns used to enhance the resolution of the main pattern during the lithography process. They are usually designed to add additional features around the main pattern to improve the imaging quality and reduce the resolution loss caused by diffraction effects during the lithography process, thereby improving the clarity and accuracy of the final pattern.

[0031] <2> Main pattern: The main pattern refers to the main features or structures that need to be formed on the substrate during the photolithography process. These features are usually the core parts of integrated circuits or other micro-nano structures, and their shape, size and position directly determine the function and performance of the device.

[0032] <3> Interference patterns: Interference patterns refer to additional patterns or features that may affect the imaging quality of the main pattern during the lithography process. These interference patterns may be caused by design defects, optical artifacts or limitations of lithography equipment. They will have a negative impact on the clarity and accuracy of the main pattern and need to be eliminated or reduced through optimization or adjustment.

[0033] To facilitate understanding of the embodiments of the present invention, first Figure 1 Detailed description. Figure 1 The flowchart of an automatic SRAF exposure and imaging suppression method in an embodiment of the present invention is shown. The automatic SRAF exposure and imaging suppression method in this embodiment mainly includes the following steps:

[0034] Step S11: executing an exposure simulation algorithm for the mask configured with the SRAF to generate an initial exposure pattern.

[0035] In one embodiment of the present invention, SRAF is composed of one or more small feature patterns and is placed near the edge or contour of the main pattern to improve the resolution of the mask pattern. After the main pattern of SRAF is placed, after photolithography, the edge of the main pattern will be smoother in theory and the pattern distortion caused by diffraction effect will be avoided.

[0036] In one embodiment of the present invention, the exposure simulation algorithm is based on the principle of light propagation and coherence. Through computer simulation, optical simulation software (such as a laser lithography simulator) is used to simulate the propagation, interference and diffraction of light waves during the exposure process, thereby realistically simulating the process of light propagation on the mask and the wafer. The simulation calculation results obtained through the exposure simulation operation simulate the exposure intensity map of each point.

[0037] Step S12: detecting interference patterns in the initial exposure pattern by using a matching algorithm, and if interference patterns are detected, performing multiple rounds of iterative optimization operations on the SRAF placement area.

[0038] In one embodiment of the present invention, the process of detecting the interference pattern in the initial exposure pattern by using a matching algorithm includes: first extracting the image feature descriptor in the initial exposure pattern, then comparing the extracted feature descriptor with a predefined interference pattern feature template, calculating the similarity or matching degree between the feature descriptor and the template, judging whether there is an interference pattern according to a preset similarity threshold, and when the matching similarity exceeds the preset threshold, determining that the interference pattern is detected, and triggering the subsequent iterative optimization operation of the SRAF placement area. The matching algorithm includes but is not limited to: a template matching algorithm, a feature point matching algorithm, and a machine learning classification algorithm.

[0039] It should be noted that the reason why placing an SRAF will produce interference patterns is that when light passes through the mask, the optical features near the SRAF will cause interference of light waves, forming a diffraction pattern, thereby introducing additional interference patterns in the exposure pattern. The interference patterns are distributed around the SRAF or overlap with the SRAF placement area, and produce local brightness changes according to the received light intensity distribution, thereby forming interference patterns containing additional patterns or boundaries on the exposure pattern finally generated. The shape of the interference pattern usually depends on the position and size of the SRAF and its relative layout with the main pattern. Interference patterns include textures, offset shapes, and blurred boundaries, which lead to edge distortion, pattern overlap, or increased defects of the main pattern.

[0040] In one embodiment of the present invention, the process of performing multiple rounds of iterative optimization operations on the SRAF placement area includes: determining whether the interference pattern overlaps with the SRAF placement area; if the interference pattern coordinates overlap with the SRAF placement area, extracting a first area to be optimized from the SRAF placement area; otherwise, extracting a second area to be optimized from the SRAF placement area; and performing multiple rounds of iterative optimization operations on the first area to be optimized / the second area to be optimized.

[0041] It is worth noting that the present invention determines whether the interference pattern overlaps with the SRAF placement area, and then performs targeted iterative optimization operations on the overlapping area and the non-overlapping area. The advantage is that by fine-tuning the overlapping area, the influence of interference on lithography imaging is effectively eliminated to ensure high-quality imaging; and for the non-overlapping area, the interference influence is quickly evaluated and a simplified optimization strategy is adopted by adding projection steps. This differentiation process not only greatly improves the response efficiency to the interference of SRAF, but also optimizes resource allocation, and improves overall design efficiency and product quality.

[0042] In one embodiment of the present invention, the process of extracting the first area to be optimized from the SRAF placement area includes: obtaining the overlapping area between the interference pattern coordinates and the SRAF placement area; and extracting the minimum circumscribed rectangle containing the overlapping area to generate the first area to be optimized.

[0043] In this embodiment, the process of extracting the minimum bounding rectangle containing the overlapping area includes: first, determining the lower left corner coordinates of the SRAF exposure pattern ( ) and the upper right corner coordinates ( ) Specifically, the lower left corner of the entire layout is set to the coordinate point (0, 0). Through these two coordinates, a corresponding rectangular area is generated, which can completely cover the SRAF exposure pattern. The side lengths of the rectangular area are ( )and( ). Figure 2 The process of sequentially iteratively optimizing the first region to be optimized in this embodiment is shown. Based on the overlapping region, a minimum external matrix that can contain the overlapping region is generated, and the minimum external matrix is ​​hollowed out from the SRAF region. With multiple iterative optimizations, the hollowed-out region is gradually reduced to generate the final optimal SRAF region.

[0044] In one embodiment of the present invention, the process of extracting the second area to be optimized from the SRAF placement area includes: extracting the SRAF placement area that is closest to the interference pattern; vertically projecting the interference pattern to the SRAF placement area that is closest to the interference pattern to generate a projection length; extracting the longest width of the nearest SRAF placement area in the projection direction; and generating the second area to be optimized in the nearest SRAF placement area based on the projection length and the longest width.

[0045] In this embodiment, the process of extracting the SRAF placement area closest to the interference pattern includes the following steps: using the Euclidean distance formula, the distance between the interference pattern and each SRAF area is calculated by formula 1. Where ( ) is the coordinate of the center point of the interference pattern, ( ) are the coordinates of the center points of each SRAF area. All calculated distance values ​​are recorded, and these distances are compared to extract the SRAF area with the smallest distance, which is the nearest SRAF placement area.

[0046] (Formula 1)

[0047] In this embodiment, the process of vertically projecting the interference pattern to the nearest SRAF placement area to generate the projection length includes: for each point ( ), extend it vertically to the boundary with the nearest SRAF area, and generate the projection point ( ). The projection length is the length of the interference pattern formed on the nearest SRAF area. This length is determined by measuring the lateral width of the projection shape on the SRAF area. Figure 3 The process of iterative optimization of the second area to be optimized in this embodiment is shown. For the non-overlapping additional exposure area, the area outside the SRAF is projected to the SRAF placement area, and the SRAF placement area is further interrupted based on the projection result to generate Figure 3 The intermediate pattern in is then gradually reduced in the SRAF placement area based on the rectangular area formed by the interrupted pattern to generate the optimal SRAF placement area.

[0048] In one embodiment of the present invention, the shape of the first area to be optimized / the second area to be optimized is a rectangle, and the process of performing multiple rounds of iterative optimization operations on the first area to be optimized / the second area to be optimized includes: taking the center point of the first area to be optimized / the second area to be optimized as a reference, shortening the long side and the short side of the first area to be optimized / the second area to be optimized, and translating the shortened long and short sides toward the center point to form an area to be removed; in the SRAF placement area, excavating the area to be removed to generate an optimized SRAF.

[0049] In this embodiment, during the iteration process, the side lengths of the rectangle in the x-direction and the y-direction are first set to be shortened respectively. A new rectangular area is formed by adjusting the side lengths of the rectangle. Next, the reduced rectangular area is removed from the target SRAF to obtain an updated SRAF. A simulation is then performed. If the new SRAF simulation fails to find the exposure pattern, the next iteration is continued; if the new SRAF simulation finds the exposure pattern, the target rectangular area will remain the rectangular area obtained in the previous iteration. Among them, "removal" refers to subtracting the reduced rectangular area from the target SRAF to eliminate the optical features in the area, thereby updating the SRAF to reflect the design requirements of the current iteration.

[0050] For example, in this iteration process, the side length of the rectangle in the x direction is set to be shortened by 1 nm each time, and in the y direction by 2 nm each time. Therefore, after the first iteration, the side length of the rectangle will become and Next, the rectangular area after the first iteration is removed from the target SRAF to obtain the SRAF of the first iteration. Then a simulation is performed. If the new SRAF simulation fails to find the exposure pattern, the next iteration is continued; if the new SRAF simulation finds the exposure pattern, the target rectangular area will remain the rectangular area obtained in the previous iteration.

[0051] Step S13: after each round of iterative optimization operation, based on the mask with the optimized SRAF, the exposure simulation algorithm is re-executed to generate a new exposure pattern; when the new exposure pattern meets the preset termination condition, the iterative optimization operation is terminated.

[0052] In one embodiment of the present invention, the preset termination condition includes one or more of the following: the quality index of the new exposure pattern meets the preset standard; the multiple rounds of iterative optimization operations reach the maximum number of iterations; the new exposure pattern does not contain interference patterns.

[0053] In this embodiment, the new exposure pattern must meet a specific quality index, for example, the minimum resolution is set to 50 nanometers, and it is considered qualified only when it reaches or exceeds this standard. Secondly, the number of rounds of iterative optimization operations must not exceed the maximum number of times set, for example, the maximum number of iterations is 50 rounds, to avoid excessive calculation and time waste. Finally, the new exposure pattern must exclude interference patterns to ensure that it is not affected by undesirable factors. For example, if the area of ​​the interference pattern exceeds 5% of the total pattern area, the optimization is terminated.

[0054] In one embodiment of the present invention, the preset termination condition also includes one or more of the following: the similarity between the exposure pattern and the target pattern reaches a threshold value to ensure that the gap between the generated exposure pattern and the design target is within an acceptable range, thereby improving the yield and quality of the finished product; the number of iterations reaches a preset upper limit to effectively prevent excessive time consumption, ensure that the optimization process is completed within a controllable time, and avoid overfitting or unnecessary complexity; set a specific time limit to ensure that the budget time is not exceeded in actual operation, facilitate the management of resources and progress, and improve the practicality of optimization; meet the cost or resource consumption constraints to avoid unnecessary waste; and the theoretical performance indicators are met, so that when the specific performance indicators are reached, it can be directly judged whether the optimization is successful, thereby reducing unnecessary optimization iterations.

[0055] Figure 4 A flow chart of another embodiment of the present invention is shown, including the following steps: by creating a simulation of the SRAF graphic, the target and its block area are clearly generated. Then, the graphic is scaled according to the height and width parameters to generate a new SRAF graphic. Subsequently, a real simulation is performed using the new graphic to confirm the generation of the target SRAF. The generated results include two types: exposed and unexposed. Finally, the SRAF will correspond to the previously selected target block area.

[0056] Figure 5A flow chart of another embodiment of the present invention is shown, including the following steps: inputting generation parameters and simulating to generate a lithography pattern, then determining whether the lithography pattern contains an interference pattern, if so, proceeding to the next step, and if not, terminating the process. Then verifying whether the overlapping part of the SRAF and the interference area exists, if there is an overlap, continuing, otherwise proceeding to the next step. Optimizing the SRAF according to the shape and size of the selected area, extracting SRAF areas of similar shapes for the first optimization. Afterwards, carefully screening the first optimized area or the second optimized area to determine whether an accurate lithography pattern is generated. Finally, determining whether the generated lithography pattern meets the expected standards, if so, outputting a new SRAF pattern, and if not, returning to the previous step for adjustment.

[0057] Figures 6 to 9 The mask layout and exposure pattern in this embodiment are shown. Figure 6 The mask layout before optimization is shown, in which four SRAF patterns are arranged around the main pattern. Figure 7 Presented based on Figure 6 The exposure pattern obtained by simulating the mask layout. In this exposure pattern, in addition to the exposure of the main pattern, there is also additional exposure interference caused by the SRAF pattern. Figure 8 The mask layout after multiple rounds of iterative optimization is shown. A rectangular hollowing area generated through multiple rounds of iterative optimization is set in the middle of each SRAF prevention area. Fig. 9 Then it presents Figure 8 Exposure pattern for simulation. Fig. 9 The exposure pattern in includes only the main pattern, which indicates that the present invention effectively eliminates the interference pattern caused by the SRAF placement.

[0058] Fig.10 is a schematic block diagram of an automatic SRAF exposure and imaging suppression device provided by an embodiment of the present invention. Fig.10 As shown, the device includes a simulation exposure module 1001, an interference detection and optimization module 1002 and a termination condition checking module 1003.

[0059] The simulation exposure module 1001 is used to execute an exposure simulation algorithm for a mask configured with SRAF to generate an initial exposure pattern; after each round of iterative optimization operation, based on the optimized SRAF, the exposure simulation operation is performed again on the mask to generate a new exposure pattern.

[0060] Interference detection and optimization module 1002: used to detect interference patterns in the initial exposure pattern through a matching algorithm, and if interference patterns are detected, perform multiple rounds of iterative optimization operations on the SRAF placement area.

[0061] Termination condition checking module 1003: used to terminate the iterative optimization operation when the new exposure pattern meets the preset termination condition.

[0062] It should be understood that the specific process of each module executing the above corresponding steps has been described in detail in the above method embodiment, and for the sake of brevity, it will not be repeated here.

[0063] It should also be understood that the division of modules in the embodiments of the present invention is schematic and is only a logical function division. There may be other division methods in actual implementation. In addition, each functional module in each embodiment of the present invention may be integrated into a processor, or may exist physically separately, or two or more modules may be integrated into one module. The above-mentioned integrated modules may be implemented in the form of hardware or in the form of software functional modules.

[0064] Fig.11 is a schematic block diagram of an electronic terminal provided by an embodiment of the present invention. Fig.11 As shown, the electronic terminal includes: at least one processor 1101, a memory 1102, at least one network interface 1103 and a user interface 1105. The various components in the device are coupled together through a bus system 1104. It can be understood that the bus system 1104 is used to realize the connection and communication between these components. In addition to the data bus, the bus system 1104 also includes a power bus, a control bus and a status signal bus. However, for the sake of clarity, Fig.11 In the specification, various buses are labeled as bus systems.

[0065] The user interface 1105 may include a display, a keyboard, a mouse, a trackball, a click gun, keys, buttons, a touch pad or a touch screen.

[0066] It is understood that the memory 1102 can be a volatile memory or a non-volatile memory, and can also include both volatile and non-volatile memories. Among them, the non-volatile memory can be a read-only memory (ROM), a programmable read-only memory (PROM), which is used as an external cache. By way of example but not limitation, many forms of RAM are available, such as static random access memory (SRAM), synchronous static random access memory (SSRAM). The memory described in the embodiments of the present invention is intended to include but is not limited to these and any other suitable categories of memory.

[0067] The memory 1102 in the embodiment of the present invention is used to store various categories of data to support the operation of the electronic terminal 1100. Examples of these data include: any executable program for operating on the electronic terminal 1100, such as an operating system 11021 and an application 11022; the operating system 11021 includes various system programs, such as a framework layer, a core library layer, a driver layer, etc., for implementing various basic services and processing hardware-based tasks. The application 11022 may include various applications, such as a media player (Media Player), a browser (Browser), etc., for implementing various application services. The automatic SRAF exposure development suppression method provided in the embodiment of the present invention may be included in the application 11022.

[0068] The method disclosed in the above embodiment of the present invention can be applied to the processor 1101, or implemented by the processor 1101. The processor 1101 may be an integrated circuit chip with signal processing capabilities. In the implementation process, each step of the above method can be completed by the hardware integrated logic circuit in the processor 1101 or the instruction in the form of software. The above processor 1101 may be a general processor, a digital signal processor (DSP, Digital Signal Processor), or other programmable logic devices, discrete gates or transistor logic devices, discrete hardware components, etc. The processor 1101 can implement or execute the various methods, steps and logic block diagrams disclosed in the embodiment of the present invention. The general processor 1101 can be a microprocessor or any conventional processor, etc. In combination with the steps of the accessory optimization method provided in the embodiment of the present invention, it can be directly embodied as a hardware decoding processor to execute, or it can be executed by a combination of hardware and software modules in the decoding processor. The software module can be located in a storage medium, which is located in a memory, and the processor reads the information in the memory and completes the steps of the above method in combination with its hardware.

[0069] In an exemplary embodiment, the electronic terminal 1100 may be implemented by one or more application specific integrated circuits (ASIC), DSP, programmable logic device (PLD), or complex programmable logic device (CPLD) to execute the aforementioned method.

[0070] According to the method provided by an embodiment of the present invention, the present invention also provides a computer program product, which includes: computer program code, when the computer program code is run on a computer, the computer executes the automatic SRAF exposure and imaging suppression method of any embodiment shown in the above embodiments.

[0071] According to the method provided by an embodiment of the present invention, the present invention also provides a computer-readable storage medium, which stores a program code. When the program code runs on a computer, the computer executes the automatic SRAF exposure and imaging suppression method of any embodiment shown in the above embodiments.

[0072] The terms "component", "module", "system", etc. used in this specification are used to represent computer-related entities, hardware, firmware, a combination of hardware and software, software, or software in execution. For example, a component can be, but is not limited to, a process, a processor, an object, an executable file, an execution thread, a program and / or a computer running on a processor. By way of illustration, both applications and computing devices running on a computing device can be components. One or more components may reside in a process and / or an execution thread, and a component may be located on a computer and / or distributed between two or more computers. In addition, these components may be executed from various computer-readable media having various data structures stored thereon. Components may, for example, communicate through local and / or remote processes according to signals having one or more data packets (e.g., data from two components interacting with another component between a local system, a distributed system and / or a network, such as the Internet interacting with other systems through signals).

[0073] Those of ordinary skill in the art will appreciate that the various illustrative logical blocks and steps described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Professional and technical personnel can use different methods to implement the described functions for each specific application, but such implementation should not be considered to be beyond the scope of the present invention.

[0074] Those skilled in the art can clearly understand that, for the convenience and brevity of description, the specific working processes of the systems, devices and units described above can refer to the corresponding processes in the aforementioned method embodiments and will not be repeated here.

[0075] In the several embodiments provided by the present invention, it should be understood that the disclosed systems, devices and methods can be implemented in other ways. For example, the device embodiments described above are only schematic, for example, the division of units is only a logical function division, and there may be other division methods in actual implementation, such as multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some interfaces, indirect coupling or communication connection of devices or units, which can be electrical, mechanical or other forms.

[0076] The units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed on multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0077] In addition, each functional unit in each embodiment of the present invention may be integrated into one processing unit, or each unit may exist physically separately, or two or more units may be integrated into one unit.

[0078] In the above embodiments, the functions of each functional unit can be implemented in whole or in part by software, hardware, firmware or any combination thereof. When implemented by software, it can be implemented in whole or in part in the form of a computer program product. The computer program product includes one or more computer instructions (programs). When the computer program instructions (programs) are loaded and executed on a computer, the process or function according to the embodiment of the present invention is generated in whole or in part. The computer can be a general-purpose computer, a special-purpose computer, a computer network, or other programmable device. The computer instructions can be stored in a computer-readable storage medium, or transmitted from one computer-readable storage medium to another computer-readable storage medium. For example, the computer instructions can be transmitted from one website site, computer, server or data center to another website site, computer, server or data center by wired (e.g., coaxial cable, optical fiber, digital subscriber line (DSL)) or wireless (e.g., infrared, wireless, microwave, etc.) mode. The computer-readable storage medium can be any available medium that can be accessed by a computer or a data storage device such as a server or data center that includes one or more available media integrated. Available media may be magnetic media (e.g., floppy disks, hard disks, tapes), optical media (e.g., high-density digital video discs (DVDs), or semiconductor media (e.g., solid state disks (SSDs)).

[0079] If the function is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention, or the part that contributes to the prior art, or the part of the technical solution, can be embodied in the form of a software product. The computer software product is stored in a storage medium, including several instructions for a computer device (which can be a personal computer, server, or network device, etc.) to perform all or part of the steps of the methods of each embodiment of the present invention. The aforementioned storage medium includes: U disk, mobile hard disk, read-only memory (ROM), random access memory (RAM), disk or optical disk, etc., various media that can store program codes.

[0080] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art can easily think of changes or substitutions within the technical scope disclosed by the present invention, which should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the claims.

[0081] In summary, the present invention provides an automatic SRAF exposure and imaging suppression method, device, medium, program product and terminal, which realizes efficient optimization of the SRAF placement area through multiple rounds of iterative optimization in different regions, and solves the time waste and process complexity problems caused by the need to redesign the SRAF placement rules in the traditional method. Specifically, if an interference pattern is detected in the initial exposure pattern, the SRAF placement area is optimized. And after each round of iterative optimization operation, based on the optimized SRAF, the exposure simulation operation is performed on the mask again to generate a new exposure pattern. When the new exposure pattern meets the preset termination condition, the iterative optimization operation is terminated. The present invention not only maintains the original spatial position of the SRAF, maximizes the enhancement effect on the resolution of the main pattern, but also improves the clarity and accuracy of the pattern, thereby improving production efficiency, simplifying the manufacturing process, and providing a more convenient solution for practical applications. Therefore, the present invention effectively overcomes the various shortcomings of the prior art and has a high industrial utilization value.

[0082] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A method for suppressing automatic SRAF exposure and development, characterized in that: include: executing an exposure simulation algorithm for a mask configured with the SRAF to generate an initial exposure pattern; detecting interference patterns in the initial exposure pattern by a matching algorithm, and performing multiple rounds of iterative optimization operations on the SRAF placement area if interference patterns are detected; After each round of iterative optimization operation, the exposure simulation algorithm is re-executed based on the mask of the SRAF after configuration optimization to generate a new exposure pattern; when the new exposure pattern meets the preset termination condition, the iterative optimization operation ends.

2. The automatic SRAF exposure development suppression method according to claim 1, characterized in that: The process of performing multiple rounds of iterative optimization operations on the SRAF placement area includes: Determining whether the interference pattern overlaps with the SRAF placement area; If the interference pattern coordinates overlap with the SRAF placement area, extracting a first area to be optimized from the SRAF placement area; otherwise, extracting a second area to be optimized from the SRAF placement area; Perform multiple rounds of iterative optimization operations on the first area to be optimized / the second area to be optimized.

3. The automatic SRAF exposure development suppression method according to claim 2, characterized in that: The process of extracting the first area to be optimized from the SRAF placement area includes: Get the overlapping area between the interference pattern coordinates and the SRAF placement area; A minimum circumscribed rectangle including the overlapping area is extracted to generate a first area to be optimized.

4. The automatic SRAF exposure development suppression method according to claim 2, characterized in that: The process of extracting the second area to be optimized from the SRAF placement area includes: Extracting the SRAF placement area closest to the interference pattern; Projecting the interference pattern vertically to the nearest SRAF placement area to generate a projection length; Extract the longest width of the nearest SRAF placement area in the projection direction; Based on the projection length and the longest width, a second area to be optimized is generated in the nearest SRAF placement area.

5. The automatic SRAF exposure development suppression method according to any one of claims 2 to 4, characterized in that: The shape of the first area to be optimized / the second area to be optimized is a rectangle, and the process of performing multiple rounds of iterative optimization operations on the first area to be optimized / the second area to be optimized includes: Taking the center point of the first area to be optimized / the second area to be optimized as a reference, shortening the long side and the short side of the first area to be optimized / the second area to be optimized, and translating the shortened long side and short side toward the center point to form an area to be removed; In the SRAF placement area, the area to be removed is excavated to generate an optimized SRAF.

6. The automatic SRAF exposure development suppression method according to claim 1, characterized in that: The preset termination conditions include one or more of the following: The quality index of the new exposure pattern meets the preset standard; The multi-round iterative optimization operation reaches the maximum number of iterations; The new exposure pattern does not contain interference patterns.

7. An automatic SRAF exposure and development suppression device, characterized in that: include: Simulation exposure module: used to execute the exposure simulation algorithm for the mask configured with SRAF to generate an initial exposure pattern; After each round of iterative optimization operation, based on the optimized SRAF, performing exposure simulation operation on the mask again to generate a new exposure pattern; Interference detection and optimization module: used to detect interference patterns in the initial exposure pattern through a matching algorithm, and if an interference pattern is detected, perform multiple rounds of iterative optimization operations on the SRAF placement area; Termination condition checking module: used to end the iterative optimization operation when the new exposure pattern meets the preset termination condition.

8. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the automatic SRAF exposure development suppression method according to any one of claims 1 to 6 is implemented.

9. A computer program product, characterized in that The computer program product includes computer program codes, and when the computer program codes are executed on a computer, the computer is enabled to implement the automatic SRAF exposure development suppression method according to any one of claims 1 to 6.

10. An electronic terminal comprising a memory, a processor and a computer program stored in the memory, characterized in that: The processor executes the computer program to implement the automatic SRAF exposure development suppression method according to any one of claims 1 to 6.

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