Intelligent power module

Abstract

According to the intelligent power module provided by the invention, the first heat dissipation plate and the second heat dissipation plate are arranged on the two surfaces of the packaging body respectively, and the heat dissipation plates are also provided with related circuits, so that the chips in the intelligent power module can be electrically connected directly based on the circuits on the heat dissipation plates, and an internal lead does not need to be additionally arranged; the packaging structure is simplified, and the difficulty of the packaging process is reduced; meanwhile, the first heat dissipation plate and the second heat dissipation plate are arranged on the two faces of the packaging body respectively, and the heat dissipation capacity of the intelligent power module can be improved.

Description

Technical Field

[0001] The present invention relates to the field of electronic devices, and in particular to an intelligent power module. Background Art

[0002] Intelligent Power Module (IPM) is an advanced power switching device that is increasingly widely used in the field of power electronics. Based on the traditional power module, the IPM integrates logic, control, detection and protection circuits internally. It has the characteristics of high integration and high system reliability, simplifies the peripheral application circuits, and is easy to use.

[0003] The intelligent power module integrates the driver chip and the power chip. The electrodes of the internal chips need to be connected by internal leads, which makes the packaging structure complicated and inconvenient for heat dissipation. Summary of the invention

[0004] The main purpose of the present invention is to provide an intelligent power module, aiming to solve the problem of complex packaging structure in the prior art.

[0005] To achieve the above object, the present invention provides an intelligent power module, comprising:

[0006] The package body is provided with a first surface and a second surface opposite to each other;

[0007] A first heat sink, which is attached to the first surface of the package body and is arranged inside the package body, and is provided with a signal circuit and a first power circuit;

[0008] A second heat sink, which is attached to the second surface of the package body and is arranged inside the package body, and is provided with a second power circuit;

[0009] A plurality of power chips and a plurality of driver chips arranged according to a predetermined electrical connection relationship;

[0010] Several pins;

[0011] A lead frame is arranged inside the package body, connected to the front electrode of the driver chip through the signal circuit of the first heat sink, connected to the front electrode of the power chip through the first power circuit of the first heat sink, and electrically connected to the back electrode of the power chip through the second power circuit of the second heat sink;

[0012] The lead frame leads the front electrode and the back electrode to be led out to the pins.

[0013] Optionally, the first heat sink includes a first metal layer and a first insulating layer; the first surface of the first metal layer is disposed in contact with the first surface of the package body, and the first insulating layer is disposed on the second surface of the first metal layer; wherein:

[0014] A signal circuit and a first power circuit are disposed on a second surface of the first insulating layer facing the package body.

[0015] Optionally, a plurality of first pads and a plurality of second pads are arranged on the first insulating layer, the first pads are arranged corresponding to the front electrodes of the driving chip or the power chip, and the second pads are arranged corresponding to the pins of the lead frame; wherein:

[0016] A first conductive structure is disposed in the first insulating layer and connected to the first pad and the second pad, and the first conductive structure is disposed based on a connection relationship between a front electrode of the driving chip or the power chip and a pin of the lead frame to constitute the signal circuit and the first power circuit;

[0017] Insulating material is arranged between different pads.

[0018] Optionally, the second heat sink includes a ceramic layer, a first copper layer and a second copper layer; the first copper layer is arranged on the second surface of the package body, the first surface of the ceramic layer is arranged in contact with the first copper layer, and the second copper layer is arranged on the second surface of the ceramic layer; wherein:

[0019] The second power circuit is arranged on the second copper layer.

[0020] Optionally, the second copper layer includes a plurality of copper sheets arranged without contact; wherein:

[0021] The projections of the reverse electrode and the reverse pin of the lead frame having a predetermined connection relationship on the second copper layer are located on the same copper sheet;

[0022] The reverse electrode projected on the same copper sheet has a predetermined connection relationship with the reverse pin of the lead frame.

[0023] Optionally, a conductive over-plating sheet is provided between the second copper layer and the reverse electrode; wherein:

[0024] The conductive over-plating sheet and the reverse electrode are arranged in one-to-one correspondence, and the projections of the conductive over-plating sheet and the reverse electrode on the second copper layer are the same.

[0025] Optionally, the lead frame includes a plurality of reverse pins, and the reverse pins have a predetermined connection relationship with the reverse electrodes;

[0026] The reverse pin and the copper sheet corresponding to the reverse electrode are arranged in contact with each other.

[0027] Optionally, the second heat sink includes a second metal layer and a second insulating layer; the first surface of the second metal layer is arranged in contact with the second surface of the package body, and the second insulating layer is arranged on the second surface of the second metal layer; wherein:

[0028] The second power circuit is disposed on the second insulating layer.

[0029] Optionally, the second insulating layer includes a plurality of second conductive structures that are arranged without contact; the projections of the reverse electrodes having a predetermined connection relationship and the reverse pins of the lead frame on the second conductive structure are located on the same second conductive structure;

[0030] The reverse electrode projected on the same second conductive structure has a predetermined connection relationship with the reverse pin of the lead frame.

[0031] Optionally, a plurality of third pads and fourth pads are disposed on the second conductive structure; wherein:

[0032] The third pads are arranged in one-to-one correspondence with the reverse electrodes, and the projection of the third pads on the second conductive structure includes the projection of the corresponding reverse electrodes on the second conductive structure;

[0033] The fourth pads are arranged in a one-to-one correspondence with the reverse pins, and the projection of the fourth pads on the second conductive structure includes the projection of the corresponding reverse electrode on the reverse pin on the second conductive structure.

[0034] An intelligent power module proposed in the present invention includes: a package body, which is provided with a first surface and a second surface relative to each other; a first heat sink, which is attached to the first surface of the package body and is arranged inside the package body, and is provided with a signal circuit and a first power circuit; a second heat sink, which is attached to the second surface of the package body and is arranged inside the package body, and is provided with a second power circuit; a plurality of power chips and a plurality of driver chips arranged according to a predetermined electrical connection relationship; a plurality of pins; a lead frame, which is arranged inside the package body, and is connected to the front electrode that needs to be led out of the driver chip through the signal circuit of the first heat sink, is connected to the front electrode that needs to be led out of the power chip through the first power circuit of the first heat sink, and is connected to the back electrode that needs to be led out of the power chip through the second heat sink; and a lead frame, which leads the front electrode and the back electrode that need to be led out to the pins. By respectively arranging a first heat sink and a second heat sink on both sides of the package body, and also arranging relevant circuits on the heat sinks, the chip in the intelligent power module can be directly electrically connected based on the circuits on the heat sinks, thereby eliminating the need to additionally arrange internal leads, simplifying the package structure, and reducing the difficulty of the package process; at the same time, the first heat sink and the second heat sink are arranged on both sides of the package body, which can improve the heat dissipation capacity of the intelligent power module. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and, together with the description, serve to explain the principles of the invention.

[0036] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0037] One or more embodiments are exemplarily described by pictures in the corresponding drawings, and these exemplified descriptions do not constitute limitations on the embodiments. Elements with the same reference numerals in the drawings represent similar elements, and unless otherwise stated, the figures in the drawings do not constitute proportional limitations.

[0038] Figure 1 A front view of a first embodiment of an intelligent power module of the present invention;

[0039] Figure 2 A side view of an embodiment of an intelligent power module of the present invention;

[0040] Figure 3 A front view of a first heat sink in an embodiment of an intelligent power module of the present invention;

[0041] Figure 4 The intelligent power module of the present invention is based on Figure 3 Cross-sectional view of AA in the middle;

[0042] Figure 5 It is a front view of a low voltage driving chip in an embodiment of an intelligent power module of the present invention;

[0043] Figure 6 A side view of a low voltage driver chip in an embodiment of an intelligent power module of the present invention;

[0044] Figure 7 It is a front view of a high-voltage driver chip in an embodiment of an intelligent power module of the present invention;

[0045] Figure 8 A side view of a high-voltage driver chip in an embodiment of an intelligent power module of the present invention;

[0046] Fig. 9 A front view of a lead frame in an embodiment of an intelligent power module of the present invention;

[0047] Fig.10 A side view of a lead frame in an embodiment of an intelligent power module of the present invention;

[0048] Fig.11 A front view of a second heat sink in an embodiment of an intelligent power module of the present invention;

[0049] Fig.12 A side view of a second heat sink in an embodiment of an intelligent power module of the present invention;

[0050] Fig.13 A rear view of a second heat sink in an embodiment of an intelligent power module of the present invention;

[0051] Fig.14 It is a front view of a conductive over-plating sheet in an embodiment of an intelligent power module of the present invention;

[0052] Fig.15 A side view of a conductive over-plating sheet in an embodiment of an intelligent power module of the present invention;

[0053] Fig.16 A side view of another embodiment of the intelligent power module of the present invention;

[0054] Fig.17 A front view of a second heat sink in another embodiment of the intelligent power module of the present invention;

[0055] Fig.18 The intelligent power module of the present invention is based on Fig.17 Cross-sectional view of AA in the middle;

[0056] Fig.19This is a rear view of the overall appearance of the intelligent power module of the present invention;

[0057] Fig. 20 It is a side view of the overall appearance of the intelligent power module of the present invention;

[0058] Fig.21 It is a front view of the overall appearance of the intelligent power module of the present invention.

[0059] Description of Figure Numbers:

[0060] Label name Label name 1 Package 342 The third pad 2 First heat sink 343 Fourth pad 21 First metal layer 4 Power Chip 22 First insulation layer 4-1 IGBT power chip 221 First pad 4-2 FRD power chip 222 Second pad 5 Driver chip 223 The first conductive structure 5-1 High voltage driver chip 224 Insulation material 5-2 Low voltage driver chip 3 Second heat sink 6 Pinout 31 Ceramic layer 7 Lead frame 32A First copper layer 8 Conductive over-plating sheet 32B Second copper layer 9 tin solder 321 Copper Sheet 10 Solder Ball 33 Second metal layer 11 Fifth pad 34 Second insulation layer 341 The second conductive structure DETAILED DESCRIPTION

[0061] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of this application.

[0062] The disclosure below provides many different embodiments or examples to implement different structures of the present invention. In order to simplify the disclosure of the present invention, the parts and settings of specific examples are described below. Of course, they are only examples, and the purpose is not to limit the present invention. In addition, the present invention can repeat reference numbers and / or letters in different examples. This repetition is for the purpose of simplification and clarity, and does not itself indicate the relationship between the various embodiments and / or settings discussed.

[0063] It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention. In order to enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only embodiments of a part of the present application, not all embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without making creative work should fall within the scope of protection of the present application.

[0064] The present invention provides an intelligent power module, referring to Figure 1 and Figure 2 , Figure 1 This is a front view of the first embodiment of the intelligent power module of the present invention, including:

[0065] The package body 1 is provided with a first surface and a second surface opposite to each other;

[0066] A first heat sink 2, which is attached to the first surface of the package body 1 and is arranged inside the package body 1, and is provided with a signal circuit and a first power circuit;

[0067] A second heat sink 3, which is attached to the second surface of the package body 1 and is arranged inside the package body 1, and is provided with a second power circuit;

[0068] A plurality of power chips 4 and a plurality of driver chips 5 arranged in a predetermined electrical connection relationship;

[0069] Several pins 6;

[0070] A lead frame 7 is arranged inside the package body 1, connected to the front electrode of the driver chip 5 through the signal circuit of the first heat sink 2, connected to the front electrode of the power chip 4 through the first power circuit of the first heat sink 2, and electrically connected to the back electrode of the power chip 4 through the second power circuit of the second heat sink 3;

[0071] The lead frame 7 leads the front electrode and the back electrode to be led out to the pin 6 .

[0072] The front electrode is the electrode on the first side of the power chip 4 or the driver chip 5 facing the package body 1; the back electrode is the electrode on the second side of the power chip 4 facing the package body 1; it can be understood that based on the electrical connection relationship that needs to be established between the front electrode and the back electrode, some electrodes need to be led out to the pins, while some electrodes are used to achieve internal connection; therefore, the specific front electrode or back electrode that needs to be led out can be determined based on the actual chip setting needs.

[0073] The package body 1 is injection molded, and the chip, the first heat sink 2, the second heat sink 3, the lead frame 7, etc. are wrapped together to protect the chip, the first heat sink 2, the second heat sink 3, the lead frame 7, etc. in the package body 1. The material can be set based on actual needs, such as a plastic encapsulation colloid made of epoxy resin.

[0074] A driving chip 5 and a power chip 4 can be specifically set in the intelligent power module, and the type and quantity of the specific chips can be set based on actual needs; for example, the driving chip 5 can be set to a low-voltage driving chip 5-2 and a high-voltage driving chip 5-1, and the power chip 4 can be set to an IGBT (Insulate-Gate Bipolar Transistor) power chip 4-1 and an FRD (Fast recovery diode) power chip 4-2. The number of IGBT power chips 4-1 is 6, and the number of FRD power chips 4-2 is 6; wherein the IGBT chip and the FRD chip constitute a three-phase full-bridge circuit, the high-voltage driving chip 5-1 drives the three IGBT chips on the high side, and the low-voltage driving chip 5-2 drives the three IGBT chips on the low side.

[0075] It is understandable that based on the functional requirements of the intelligent power module, an electrical connection relationship needs to be set between the chips. Therefore, in this embodiment, the chip is arranged between the first heat sink 2 and the second heat sink 3. At the same time, the signal circuit and the first power circuit are arranged on the first heat sink 2, and the second power circuit is arranged on the second heat sink 3.

[0076] The signal circuit is used to establish electrical connections between the driver chip 5 and other chips and between the driver chip 5 and the lead frame 7 ; the specific routing and quantity of the signal circuit are set based on the actual needs of the driver chip 5 .

[0077] The first power circuit is used to establish an electrical connection between the front electrode of the power chip 4 and other chips and between the power chip 4 and the lead frame 7; it can be understood that the power chip 4 is provided with electrodes on both sides, and in the internal lead scheme in the prior art, the electrode can be directly led out to the lead frame 7 through the internal lead, and after the internal lead is cancelled, the electrode cannot be directly led out. Therefore, in this embodiment, the electrical connection of the back electrode of the power chip 4 is established by setting a second power circuit on the second heat sink 3.

[0078] In this embodiment, the original function of the inner lead is realized by setting the signal circuit, the first power circuit on the first heat sink 2 and the second power circuit on the second heat sink 3; compared with the setting of the inner lead, the relevant circuit in this embodiment can be more conveniently set on the heat sink, and at the same time, the internal structure is simplified, which can improve the packaging efficiency.

[0079] The first heat sink 2 and the second heat sink 3 are made of materials with good heat dissipation capability, and the specific materials can be set based on actual needs, such as metal and ceramic.

[0080] In this embodiment, a first heat sink 2 and a second heat sink 3 are respectively arranged on two sides of the package body 1, and relevant circuits are also arranged on the heat sinks, so that the chip in the intelligent power module can be directly electrically connected based on the circuits on the heat sinks, thereby eliminating the need to additionally arrange internal leads, simplifying the packaging structure, and reducing the difficulty of the packaging process; at the same time, the first heat sink 2 and the second heat sink 3 are arranged on two sides of the package body 1, which can improve the heat dissipation capacity of the intelligent power module.

[0081] Further, see Figure 3 , Figure 4 The first heat sink 2 includes a first metal layer 21 and a first insulating layer 22; the first surface of the first metal layer 21 is arranged in contact with the first surface of the package body 1, and the first insulating layer 22 is arranged on the second surface of the first metal layer 21; wherein:

[0082] A signal circuit and a first power circuit are disposed on the second surface of the first insulating layer 22 facing the package body 1 .

[0083] In this embodiment, the first heat dissipation plate 2 is composed of a first metal layer 21 and a first insulating layer 22 .

[0084] The material of the first metal layer 21 is metal, so it has good heat dissipation performance. The specific metal type used can be set based on actual needs, such as aluminum and copper. It should be noted that at this time, the first metal layer 21, as part of the first surface of the package body 1, is exposed to the external environment, thereby improving the heat dissipation capacity.

[0085] It can be understood that a signal circuit and a first power circuit need to be set on the first heat sink 2. Therefore, in order to realize the setting of related circuits, the first insulating layer 22 is set on the first metal layer 21 in this embodiment, so that the signal circuit and the first power circuit can be set on the first insulating layer 22; the first insulating layer 22 is made of insulating material, and the specific material type can be set based on actual needs.

[0086] Further, a plurality of first pads 221 and a plurality of second pads 222 are arranged on the first insulating layer 22, the first pads 221 are arranged corresponding to the front electrodes of the driving chip 5 or the power chip 4, and the second pads 222 are arranged corresponding to the pins 6 of the lead frame 7; wherein:

[0087] The first conductive structure 223 is disposed in the first insulating layer 22 and connected to the first pad 221 and the second pad 222. The first conductive structure 223 is disposed based on the connection relationship between the front electrode of the driving chip 5 or the power chip 4 and the pin 6 of the lead frame 7, forming the signal circuit and the first power circuit;

[0088] Insulating material 224 is disposed between different pads.

[0089] It can be understood that the chip and the lead frame 7 need to be welded on the first heat sink 2; therefore, in this embodiment, solder pads are set according to the position of the chip and the position of the pin 6 of the lead frame 7; specifically, the first solder pad 221 corresponds to the driver chip 5 or the power chip 4, and the second solder pad 222 corresponds to the pin 6 of the lead frame 7; at the same time, a first conductive structure 223 is set between the solder pads based on a predetermined connection relationship between the front electrode of the chip and the pin 6 of the lead frame 7, so that after the driver chip 5, the power chip 4, and the lead frame 7 are welded on the first heat sink 2, based on the first conductive structure 223 set on the first heat sink 2, the electrode of the driver chip 5, the front electrode of the power chip 4, and the pin 6 of the lead frame 7 achieve a predetermined connection relationship through the first conductive structure 223.

[0090] See also Figures 4 to 10 When soldering the chip, the lead frame 7 and the first heat sink 2, a fifth solder pad 11 can be pre-set at the corresponding front electrode position on the driver chip 5, and a solder ball 10 can be pre-soldered in the fifth solder pad 11, so that the driver chip 5 can be flip-chip soldered on the first insulating layer 22; and for the power chip 4, flip-chip soldering can be achieved by printing solder paste on the corresponding first solder pad 221; for the lead frame 7, connection can be achieved by printing the second solder pad 222 on the first insulating layer 22 and solder paste.

[0091] It can be understood that the first conductive structure 223 is composed of a conductor; when the first conductive structure 223 is specifically set, the connection relationship between the electrodes or pins 6 corresponding to any two pads is determined. When the electrodes or pins 6 corresponding to the two pads need to be connected based on a predetermined connection relationship, a connecting path is set between the corresponding two pads through the conductor; at the same time, the electrodes or pins 6 that do not have the predetermined connection relationship are independently insulated to achieve the setting of the first conductive structure 223.

[0092] In order to further protect the electrodes or pins 6 that do not have a predetermined connection relationship from maintaining an insulation state, in this embodiment, an insulating material 224 is provided between different pads to improve the insulation between the electrodes or pins 6 or the first conductive structure 223 that need to be isolated.

[0093] Further, see Figure 11 to Figure 13 , the second heat sink 3 includes a ceramic layer 31, a first copper layer 32A and a second copper layer 32B; the first copper layer 32A is arranged on the second surface of the package body 1, the first surface of the ceramic layer 31 is arranged in contact with the first copper layer 32A, and the second copper layer 32B is arranged on the second surface of the ceramic layer 31; wherein:

[0094] The second power circuit is disposed on the second copper layer 32B.

[0095] In this embodiment, the second heat sink 3 is composed of a ceramic layer 31, a first copper layer 32A and a second copper layer 32B, that is, the second heat sink 3 is a ceramic copper-clad plate; in other embodiments, the second copper layer 32B can also be set as a conductive layer composed of other materials.

[0096] The material of the ceramic layer 31 is ceramic, so it has good heat dissipation performance; it should be noted that, at this time, the first copper layer 32A, as part of the second surface of the package body 1, is exposed to the external environment, thereby improving the heat dissipation capacity.

[0097] It can be understood that ceramic, as an insulating material, can serve as the basis for circuit settings. Therefore, in this embodiment, a second copper layer 32B is set on the ceramic layer 31, and the second copper layer 32B is used to construct a second power circuit; it can be understood that the second copper layer 32B is composed of copper, so it has conductive ability and can meet the electrical connection requirements between the back electrode and the pin 6 of the lead frame 7.

[0098] Furthermore, the second copper layer 32B comprises a plurality of copper sheets 321 insulated from each other; wherein:

[0099] The projections of the reverse electrode and the reverse pin 6 of the lead frame 7 having a predetermined connection relationship on the second copper layer 32B are located on the same copper sheet 321;

[0100] The back electrode projected on the same copper sheet 321 has a predetermined connection relationship with the back pin 6 of the lead frame 7 .

[0101] The back pin 6 is a pin 6 on the lead frame 7 that needs to establish an electrical connection with the back electrode.

[0102] It can be understood that the chip and the lead frame 7 need to be welded to the second heat sink 3. Therefore, the projection of the back electrode of the power chip 4 and the back pin 6 of the lead frame 7 on the second copper layer 32B is the connection position corresponding to the second copper layer 32B after welding; and the projection of the back electrode and the back pin 6 with a predetermined connection relationship on the second copper layer 32B is located on the same copper sheet 321. Since the copper sheet 321 has good conductive properties, after the chip and the lead frame 7 are welded, the back electrode and the back pin 6 with a predetermined connection relationship can be electrically connected through the copper sheet 321.

[0103] When the chip, the lead frame 7 and the second heat sink 3 are welded, the back pins 6 can be connected by solder paste printed on the second heat sink 3 ; and the back pins 6 can be welded by solder.

[0104] The back electrode projected on the same copper sheet 321 has a predetermined connection relationship with the back pin 6 of the lead frame 7, so that after welding, the back electrode and the back pin 6 connected to the same copper sheet 321 need to be connected; at the same time, it is ensured that the back electrodes and the back pin 6 that do not have the predetermined connection relationship will be arranged on different copper sheets 321 to achieve mutual insulation.

[0105] It can be understood that the copper sheets 321 are insulated from each other, and therefore, there is no electrical connection between the reverse electrodes and reverse pins 6 connected to different copper sheets 321 .

[0106] Further, see Figure 2 , Fig.14 , Fig.15 , a conductive over-plating sheet 8 is provided between the second copper layer 32B and the reverse electrode; wherein:

[0107] The conductive over-plating sheet 8 and the reverse electrode are arranged in one-to-one correspondence, and the projections of the conductive over-plating sheet 8 and the reverse electrode on the second copper layer 32B are the same.

[0108] It can be understood that the chip is welded to the first heat sink 2, and the first heat sink 2 is arranged on the first side of the package body 1, and the second heat sink 3 is arranged on the second side of the package body 1. Therefore, there is a certain gap between the second copper layer 32B and the back electrode of the power chip 4, so that the copper sheet 321 and the back electrode of the power chip 4 cannot be directly welded; in order to achieve the electrical connection between the copper sheet 321 and the back electrode, a conductive over-plating sheet 8 is provided in this embodiment; the conductive over-plating sheet 8 can conduct electricity, and therefore, the electrical connection between the copper sheet 321 and the back electrode can be achieved through the conductive over-plating sheet 8; the specific material of the conductive over-plating sheet 8 can be set based on actual needs, such as a molybdenum sheet.

[0109] In actual configuration, the conductive over-plating sheet 8 is welded to the reverse electrode via the tin solder 9 and welded to the corresponding position of the copper sheet 321 via the solder paste.

[0110] In order to ensure the transmission of electrical signals between the back electrode and the copper sheet 321, the projection of the conductive plated sheet 8 on the second copper layer 32B is set to be the same as that of the back electrode, so that the conductive cross section is the same as that of the back electrode, thereby ensuring the conductive efficiency. In practical applications, the projection of the conductive plated sheet 8 on the second copper layer 32B can also be set to include the projection corresponding to the back electrode, or to intersect with the projection corresponding to the back electrode.

[0111] Further, the lead frame 1 comprises a plurality of reverse pins, and the reverse pins 6 have a predetermined connection relationship with the reverse electrodes;

[0112] The reverse pin 6 and the copper sheet 321 corresponding to the reverse electrode are arranged in contact with each other.

[0113] It can be understood that the lead frame 7 is welded to the first heat sink 2, and the first heat sink 2 is arranged on the first side of the package body 1, and the second heat sink 3 is arranged on the second side of the package body 1. Therefore, there is a certain gap between the second copper layer 32B and the reverse pin 6 of the lead frame 7, so that the copper sheet 321 and the reverse pin 6 cannot be directly welded; in order to achieve the electrical connection between the copper sheet 321 and the reverse pin 6, the reverse pin 6 can be bent so that the reverse pin 6 can be connected to the copper sheet 321.

[0114] Furthermore, participate Figure 16 to Figure 18 The second heat sink 3 includes a second metal layer 33 and a second insulating layer 34; the first surface of the second metal layer 33 is arranged in contact with the second surface of the package body 1, and the second insulating layer 34 is arranged on the second surface of the second metal layer 33; wherein:

[0115] The second power circuit is disposed on the second insulating layer 34 .

[0116] In this embodiment, the second heat sink 3 is composed of a second metal layer 33 and a second insulating layer 34 .

[0117] The material of the second metal layer 33 is metal, so it has good heat dissipation performance. The specific type of metal used can be set based on actual needs, such as aluminum and copper.

[0118] It is understandable that a second power circuit needs to be set on the second heat sink 3. Therefore, in order to realize the setting of the relevant circuit, the second insulating layer 34 is set on the second metal layer 33 in this embodiment, so that the second power circuit can be set on the second insulating layer 34; the second insulating layer 34 is made of insulating material, and the specific material type can be set based on actual needs.

[0119] Furthermore, a plurality of mutually insulated second conductive structures 341 are provided on the second insulating layer 34; the projections of the reverse electrodes and the reverse pins 6 of the lead frame 7 having a predetermined connection relationship on the second conductive structure 341 are located on the same second conductive structure 341;

[0120] The back electrode projected on the same second conductive structure 341 has a predetermined connection relationship with the back pin 6 of the lead frame 7 .

[0121] It can be understood that the chip and the lead frame 7 need to be welded to the second heat sink 3. Therefore, the projection of the back electrode of the power chip 4 and the back pin 6 of the lead frame 7 on the second copper layer 32B is the connection position corresponding to the second copper layer 32B after welding; and the projection of the back electrode and the back pin 6 with a predetermined connection relationship on the second copper layer 32B is located on the same second conductive structure 341. Since the second conductive structure 341 has good conductive properties, after the chip and the lead frame 7 are welded, the back electrode and the back pin 6 with a predetermined connection relationship can be electrically connected through the second conductive structure 341; the specific material of the second conductive structure 341 can be set based on actual needs, such as copper.

[0122] The back electrode projected on the same second conductive structure 341 has a predetermined connection relationship with the back pin 6 of the lead frame 7, so that after welding, the back electrode and the back pin 6 connected to the same second conductive structure 341 need to be connected; at the same time, it is ensured that the back electrodes and the back pin 6 that do not have the predetermined connection relationship will be arranged on different copper sheets 321 to achieve mutual insulation.

[0123] It can be understood that the conductors are insulated from each other, and therefore, there is no electrical connection between the reverse electrodes and reverse pins 6 connected to different second conductive structures 341 .

[0124] In order to further ensure insulation between different second conductive structures 341 , insulating material 224 may be disposed in gaps between different second conductive structures 341 .

[0125] Furthermore, a plurality of third pads 342 and fourth pads 343 are disposed on the second conductive structure 341; wherein:

[0126] The third pads 342 are arranged in one-to-one correspondence with the reverse electrodes, and the projection of the third pads 342 on the second conductive structure 341 includes the projection of the corresponding reverse electrodes on the second conductive structure 341;

[0127] The fourth pads 343 are arranged in one-to-one correspondence with the reverse pins 6 , and the projection of the fourth pads 343 on the second conductive structure 341 includes the projection of the corresponding reverse electrode on the reverse pin 6 on the second conductive structure 341 .

[0128] It is understandable that the chip and the lead frame 7 need to be welded on the second heat sink 3; therefore, in this embodiment, solder pads are set according to the position of the back electrode of the chip and the position of the back pin 6 of the lead frame 7; specifically, the third solder pad 342 corresponds to the back electrode of the power chip 4, and the fourth solder pad 343 corresponds to the back pin 6 of the lead frame 7.

[0129] It should be noted that, in order to ensure welding between the back electrode and the back lead 6 and the second conductive structure 341 , a conductive over-plating sheet 8 may be provided as described in the above embodiment, which will not be elaborated herein.

[0130] join Figure 19 to Figure 21 In the overall manufacturing of the intelligent power module, the first heat sink 2, the driver chip 5, the power chip 4 and the lead frame 7 are first welded to obtain a semi-finished product, and then the second heat sink 3 and the conductive over-plating sheet 8 are welded to the semi-finished product to complete the circuit connection of the product, and then it is molded with plastic sealing glue, and then electroplated, and finally the single intelligent power module product is separated through the rib cutting and molding process.

[0131] In the present invention, the terms "first", "second", "third", "fourth" and "fifth" are used for descriptive purposes only and are not to be understood as indicating or implying relative importance. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0132] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0133] Although the embodiments of the present invention have been shown and described above, the scope of protection of the present invention is not limited thereto. It is understood that the above embodiments are exemplary and cannot be understood as limiting the present invention. A person of ordinary skill in the art can change, modify and replace the above embodiments within the scope of the present invention, and these changes, modifications and replacements should be included in the scope of protection of the present invention. Therefore, the scope of protection of the present invention shall be subject to the scope of protection of the claims.

Claims

1. An intelligent power module, characterized in that: include: The package body is provided with a first surface and a second surface opposite to each other; A first heat sink, which is attached to the first surface of the package body and is arranged inside the package body, and is provided with a signal circuit and a first power circuit; A second heat sink, which is attached to the second surface of the package body and is arranged inside the package body, and is provided with a second power circuit; A plurality of power chips and a plurality of driver chips arranged according to a predetermined electrical connection relationship; Several pins; A lead frame is arranged inside the package body, connected to the front electrode of the driver chip through the signal circuit of the first heat sink, connected to the front electrode of the power chip through the first power circuit of the first heat sink, and electrically connected to the back electrode of the power chip through the second power circuit of the second heat sink; The lead frame leads the front electrode and the back electrode to be led out to the pins.

2. The intelligent power module according to claim 1, characterized in that: The first heat sink includes a first metal layer and a first insulating layer; the first surface of the first metal layer is arranged in contact with the first surface of the package body, and the first insulating layer is arranged on the second surface of the first metal layer; wherein: A signal circuit and a first power circuit are disposed on a second surface of the first insulating layer facing the package body.

3. The intelligent power module according to claim 2, characterized in that: A plurality of first pads and a plurality of second pads are arranged on the first insulating layer, the first pads are arranged corresponding to the front electrodes of the driving chip or the power chip, and the second pads are arranged corresponding to the pins of the lead frame; wherein: A first conductive structure is disposed in the first insulating layer and connected to the first pad and the second pad, and the first conductive structure is disposed based on a connection relationship between a front electrode of the driving chip or the power chip and a pin of the lead frame to constitute the signal circuit and the first power circuit; Insulating material is arranged between different welding pads.

4. The intelligent power module according to claim 1, characterized in that: The second heat sink includes a ceramic layer, a first copper layer and a second copper layer; the first copper layer is disposed on the second surface of the package body, the first surface of the ceramic layer is disposed in contact with the first copper layer, and the second copper layer is disposed on the second surface of the ceramic layer; wherein: The second power circuit is arranged on the second copper layer.

5. The intelligent power module according to claim 4, characterized in that: The second copper layer includes a plurality of copper sheets arranged without contact; wherein: The projections of the reverse electrode and the reverse pin of the lead frame having a predetermined connection relationship on the second copper layer are located on the same copper sheet; The reverse electrode projected on the same copper sheet has a predetermined connection relationship with the reverse pin of the lead frame.

6. The intelligent power module according to claim 5, characterized in that: A conductive over-plating sheet is provided between the second copper layer and the reverse electrode; wherein: The conductive over-plating sheet and the reverse electrode are arranged in one-to-one correspondence, and the projections of the conductive over-plating sheet and the reverse electrode on the second copper layer are the same.

7. The intelligent power module according to claim 5, characterized in that: The lead frame includes a plurality of reverse pins, and the reverse pins have a predetermined connection relationship with the reverse electrodes; The reverse pin and the copper sheet corresponding to the reverse electrode are arranged in contact with each other.

8. The intelligent power module according to claim 1, characterized in that: The second heat sink includes a second metal layer and a second insulating layer; the first surface of the second metal layer is arranged in contact with the second surface of the package body, and the second insulating layer is arranged on the second surface of the second metal layer; wherein: The second power circuit is disposed on the second insulating layer.

9. The intelligent power module according to claim 8, characterized in that: The second insulating layer includes a plurality of second conductive structures that are arranged without contact; the projections of the reverse electrodes and the reverse pins of the lead frame having a predetermined connection relationship on the second conductive structure are located on the same second conductive structure; The reverse electrode projected on the same second conductive structure has a predetermined connection relationship with the reverse pin of the lead frame.

10. The intelligent power module according to claim 9, characterized in that: A plurality of third pads and fourth pads are disposed on the second conductive structure; wherein: The third pads are arranged in one-to-one correspondence with the reverse electrodes, and the projection of the third pads on the second conductive structure includes the projection of the corresponding reverse electrodes on the second conductive structure; The fourth pads are arranged in a one-to-one correspondence with the reverse pins, and the projection of the fourth pads on the second conductive structure includes the projection of the corresponding reverse electrode on the reverse pin on the second conductive structure.

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