Electromagnetically excited zinc oxide nanowire resonator and preparation method and application thereof

Abstract

The invention discloses an electromagnetically-excited zinc oxide nanowire resonator and a preparation method and application thereof, electrodes manufactured by adopting a metal stripping method can better clamp a resonant beam, the contact resistance is lower, and the clamping loss is lower, in addition, the thicker the metal electrodes are manufactured, the better the resonant beam is clamped, the contact resistance is lower, and the clamping loss is lower. The base electrode is arranged to apply electrostatic force to the resonant beam so that the tensile stress of the resonant beam can be improved, the optimization is favorable for improving the performance of the resonator, the preparation method does not need to use an expensive focused ion beam system, the manufacturing process is simplified, the cost is reduced, the quality and the performance of the nanowire resonator are also remarkably improved, and the production cost is reduced. Powerful support is provided for wide application of the nanowire in the sensing field, and the problems that in a traditional bottom-to-top manufacturing method, the cost is high, the process is complex, the nanowire quality is difficult to guarantee, and the cost is high when metal is deposited at the two ends of the nanowire through a focused ion beam system are solved.

Description

Technical Field

[0001] The invention belongs to the technical field of nanowire resonant sensors, and in particular relates to an electromagnetically excited zinc oxide nanowire resonator and a preparation method and application thereof. Background Art

[0002] The development of nanotechnology has brought revolutionary breakthroughs to the research and development of nanowire resonators. As a type of sensor element with excellent performance, nanowire resonators have shown broad application prospects in many fields such as quality detection, mechanical detection, displacement detection, etc. due to their high sensitivity and precision. In these fields, zinc oxide (ZnO) nanowires are recognized as an ideal choice for building ultra-high sensitivity sensors due to their excellent chemical, mechanical and thermal stability.

[0003] However, most nanowire resonators require high-precision assembly technology rather than silicon-based chemical etching technology, which greatly increases the difficulty of integration and mass production. Traditional methods for making nanowire resonators mainly rely on bottom-up chemical synthesis methods, such as chemical vapor deposition (CVD) or using a focused ion beam (FIB) system to deposit metal at both ends of the nanowire. These methods face many challenges in practical applications. The CVD method needs to be carried out in a high-temperature environment, which not only increases the production cost, but may also affect the performance of other devices on the silicon wafer; while the method using FIB is more expensive, and using FIB to deposit metal at both ends of the nanowire may result in poor electrical contact at the clamping end of the nanowire, thereby affecting the mechanical and electrical properties of the resonator. Summary of the invention

[0004] The purpose of this section is to summarize some aspects of embodiments of the present invention and briefly introduce some preferred embodiments. Some simplifications or omissions may be made in this section and the specification abstract and the invention title of this application to avoid blurring the purpose of this section, the specification abstract and the invention title, and such simplifications or omissions cannot be used to limit the scope of the present invention.

[0005] In view of the above problems and / or the problems existing in the prior art, the present invention is proposed.

[0006] Therefore, the object of the present invention is to overcome the deficiencies in the prior art and provide an electromagnetically excited zinc oxide nanowire resonator.

[0007] In order to solve the above technical problems, the present invention provides the following technical solution: its structure includes:

[0008] Base silicon wafer 100;

[0009] The zinc oxide nanowire 102 is located on the base silicon wafer 100 and is tightly clamped by metal electrodes 103 at both ends;

[0010] The metal electrode 103 is used to support and fix the zinc oxide nanowire 102 and is also responsible for connecting with an external circuit to realize the input of an excitation signal and the output of a response signal;

[0011] The base electrode 104 is located beside the zinc oxide nanowire 102 and is not connected to the zinc oxide nanowire 102, and is used to apply a bias electrostatic force to the zinc oxide nanowire 102;

[0012] Negative photoresist 105 is located on the surface of the metal electrodes 103 at both ends and serves as a protective film for the electrodes;

[0013] The permanent magnet 106 is fixed below the base silicon wafer 100 and is used to generate a constant magnetic field perpendicular to the zinc oxide nanowires 102 .

[0014] Another object of the present invention is to provide a method for preparing an electromagnetically excited zinc oxide nanowire resonator.

[0015] In order to solve the above technical problems, the present invention provides the following technical solutions: comprising:

[0016] After the surface of the polished and oxidized silicon wafer is activated, it is sequentially cleaned, dehydrated and subjected to surface film forming treatment to obtain a pre-treated base silicon wafer 100;

[0017] A layer of polymethyl methacrylate photoresist is uniformly coated on the surface of the base silicon wafer 100, and a first photoresist layer 101 is formed by pre-baking.

[0018] Dispersing single crystal zinc oxide nanowires on the first photoresist layer 101 to ensure that the nanowires are evenly distributed and do not overlap, and then coating a layer of polymethyl methacrylate to form a second photoresist layer;

[0019] Wherein, the single crystal zinc oxide nanowire has a diameter of 50 to 120 nm, a length of 7 to 30 μm, and an aspect ratio of 60 to 300 as the resonance beam material;

[0020] The second photoresist layer is patterned and exposed by using a high-precision electron beam exposure system, and the electron beam exposure area is precisely controlled to be the position of the two ends and the position beside the zinc oxide nanowire, and then developing and fixing are performed to form a zinc oxide nanowire 102 structure in which the two ends of the zinc oxide nanowire are exposed to the air and the middle is sandwiched by the photoresist;

[0021] Sputtering metal onto both ends of the zinc oxide nanowire 102 structure by magnetron sputtering, and removing excess photoresist and excess metal on the photoresist, to form a structure where both ends of the zinc oxide nanowire 102 are clamped by metal electrodes 103, and there is a base electrode 104 that is not connected to the zinc oxide nanowire 102;

[0022] A layer of negative resist is coated on the surface of the metal electrode 103 and the base electrode 104, and electron beam patterning exposure, development and fixing are performed in sequence to remove the negative resist in the unexposed area to form a negative resist 105 structure;

[0023] Next, the structure is subjected to high temperature annealing treatment under the protection of nitrogen or inert gas, and then the permanent magnet 106 is fixed below the base silicon wafer 100 to obtain a zinc oxide nanowire resonator.

[0024] As a preferred solution of the method for preparing the electromagnetically excited zinc oxide nanowire resonator of the present invention, the activation temperature of the silicon wafer activation is 500-700K, and the activation time is 20-40 minutes.

[0025] As a preferred solution of the method for preparing the electromagnetically excited zinc oxide nanowire resonator of the present invention, the treatment temperature of the pre-baking treatment is 380-400K, and the activation time is 20-25min.

[0026] As a preferred solution of the method for preparing the electromagnetically excited zinc oxide nanowire resonator of the present invention, the dispersion method of the single crystal zinc oxide nanowires includes chemical vapor deposition or hydrothermal method, and the solvent used includes ethanol or isopropanol.

[0027] As a preferred embodiment of the method for preparing the electromagnetically excited zinc oxide nanowire resonator of the present invention, the metal material of the sputtered metal includes gold, silver or aluminum, and the speed during the sputtering process is Vacuum degree better than 1×10 -2 Pa.

[0028] As a preferred solution of the method for preparing the electromagnetically excited zinc oxide nanowire resonator of the present invention, the thickness of the metal electrode 103 and the base electrode 104 is 400-800 nm.

[0029] As a preferred embodiment of the method for preparing the electromagnetically excited zinc oxide nanowire resonator of the present invention, the negative photoresist is SU-8 photoresist, and the exposure dose is 3.6m~4.0mW / cm 2 , the developing time is 30 to 60 seconds.

[0030] As a preferred embodiment of the method for preparing the electromagnetically excited zinc oxide nanowire resonator of the present invention, the high-temperature annealing treatment includes three stages: heating, insulation and cooling. The heating rate in the heating stage is 5 to 10°C / min, the temperature in the insulation stage is 300°C to 350°C, the time is 1 to 3 hours, and the cooling rate in the cooling stage is 3 to 5°C / min.

[0031] Another object of the present invention is to provide an application of an electromagnetically excited zinc oxide nanowire resonator in constructing an ultra-high sensitivity sensor.

[0032] Beneficial effects of the present invention:

[0033] (1) High stability: The nanowire resonator of the present invention has good stability and anti-interference ability, and can maintain stable performance in various complex environments.

[0034] (2) Easy to reduce costs and mass production: The manufacturing method of the present invention adopts a top-down processing strategy and is easy to mass produce, which is expected to reduce production costs, improve production efficiency, and promote the widespread application of nanowire resonators in the field of sensing. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for describing the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative labor. Among them:

[0036] Figure 1 This is a flow chart of preparing an electromagnetically excited zinc oxide nanowire resonator according to Example 1 of the present invention.

[0037] Figure 2 This is a schematic diagram of the structure of the zinc oxide nanowire resonator prepared in Example 1 of the present invention. DETAILED DESCRIPTION

[0038] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the specific implementation methods of the present invention are described in detail below in conjunction with the embodiments of the specification.

[0039] In the following description, many specific details are set forth to facilitate a full understanding of the present invention, but the present invention may also be implemented in other ways different from those described herein, and those skilled in the art may make similar generalizations without violating the connotation of the present invention. Therefore, the present invention is not limited to the specific embodiments disclosed below.

[0040] Secondly, the term "one embodiment" or "embodiment" as used herein refers to a specific feature, structure, or characteristic that may be included in at least one implementation of the present invention. The term "in one embodiment" that appears in different places in this specification does not necessarily refer to the same embodiment, nor does it refer to a separate or selective embodiment that is mutually exclusive with other embodiments.

[0041] Unless otherwise specified, the raw materials used in the present invention are all commercially available in the art.

[0042] The processes involved in the present invention are all conventional processes in the art unless otherwise specified.

[0043] Example 1

[0044] Reference Figure 1 This embodiment provides a method for preparing an electromagnetically excited zinc oxide nanowire resonator, specifically:

[0045] 1) Substrate pretreatment:

[0046] A silicon wafer with a polished and oxidized surface is used as the substrate material, and an activation treatment is performed at 500K for 20 minutes to ensure good electrical insulation. Subsequently, cleaning, dehydration and surface film formation treatment are performed in sequence to enhance the adhesion between the silicon wafer and the photoresist, thereby obtaining a pretreated substrate 100.

[0047] 2) Photoresist coating and nanowire dispersion:

[0048] A layer of polymethyl methacrylate (PMMA) photoresist is uniformly coated on the surface of the pre-treated substrate 100 and pre-baked at 394K for 20 minutes to form a first photoresist layer 101;

[0049] Dispersing single crystal zinc oxide nanowires on the first photoresist layer 101 to ensure that the nanowires are evenly distributed and without overlap, and then coating a layer of polymethyl methacrylate (PMMA) to form a second photoresist layer, wherein the thickness of the photoresist is greater than the diameter of the zinc oxide nanowire, wherein the single crystal zinc oxide nanowire has a diameter of 50 nm and a length of 10 μm as a resonant beam material;

[0050] Furthermore, the dispersed zinc oxide nanowires 102 in this step are prepared by chemical vapor deposition or hydrothermal method, and the solvent used in the dispersion process is a volatile organic solvent, such as ethanol or isopropanol, to ensure uniform dispersion of the nanowires.

[0051] 3) Electron beam exposure and development:

[0052] The second photoresist layer is patterned and exposed using a high-precision electron beam exposure system. The electron beam exposure area is precisely controlled to be the position at both ends of the nanowire and the position beside the nanowire 102. Development and fixing treatments are then performed to form a zinc oxide nanowire 102 structure in which both ends of the zinc oxide nanowire are exposed to the air and the middle is sandwiched by the photoresist.

[0053] 4) Metal electrode sputtering and stripping:

[0054] In step 3), metal is sputtered at both ends of the exposed nanowire 102 by magnetron sputtering. The metal material is gold with good conductivity and oxidation resistance, and acetone is used to remove excess photoresist and excess metal layer on the photoresist, forming a structure in which both ends of the zinc oxide nanowire 102 are clamped by the metal electrode 103, and there is a base electrode 104 that is not connected to the zinc oxide nanowire 102.

[0055] In this step, the thickness of the metal electrode 103 and the base electrode 104 is 400 nm, and the speed during magnetron sputtering is controlled at The vacuum degree used is less than 1×10 -2 Pa to ensure the continuity and conductivity of the electrodes.

[0056] 5) Electrode protection and patterning:

[0057] A layer of negative resist 105 is coated on the surface of the metal electrode 103 and the base electrode 104, and electron beam patterning exposure is performed to protect the electrode area to avoid damage caused by subsequent processing. Subsequently, development and fixing treatment are performed to remove the negative resist in the unexposed area to form a protective film for the electrode.

[0058] The negative photoresist 105 in this step is SU-8 photoresist, and the exposure dose is 3.8 mW / cm 2 , the development time is 45 seconds to ensure the effectiveness of electrode protection.

[0059] 6) High temperature tempering treatment:

[0060] The resonator structure obtained in step 5) is subjected to high-temperature annealing treatment under nitrogen or inert gas protection to optimize the crystallization quality of the zinc oxide nanowires and effectively reduce the contact resistance between the nanowires and the electrodes, thereby improving the overall performance of the resonator. The annealing temperature is controlled at 350° C. for 2 hours to ensure the stability and reliability of the resonator.

[0061] Specifically, the high temperature annealing treatment in this step includes three stages: heating, insulation and cooling. The heating rate in the heating stage is 8°C / min, the temperature in the insulation stage is 330°C, the time is 2 hours, and the cooling rate in the cooling stage is 4°C / min to ensure the performance and reliability of the resonator.

[0062] 7) Permanent magnet placement:

[0063] The permanent magnet 106 is fixed to the bottom of the silicon wafer 100 using glue to apply a constant magnetic field to the resonator.

[0064] Figure 2Referring to the structural diagram of the zinc oxide nanowire resonator prepared in the above steps, the zinc oxide nanowire 102 is tightly clamped by metal electrodes 103 at both ends. The metal electrodes 103 not only provide support and fixation for the zinc oxide nanowire 102, but also are responsible for connecting with the external circuit to realize the input of the excitation signal and the output of the response signal;

[0065] There is a base electrode 104 next to the zinc oxide nanowire 102 that is not connected to the nanowire and is responsible for applying a 2V bias electrostatic force to the nanowire;

[0066] The silicon wafer 100 is located below the entire structure to provide stable support for the resonator, and the permanent magnet 106 is placed below the silicon wafer 100 to generate a magnetic field perpendicular to the nanowires, thereby achieving electromagnetic excitation of the zinc oxide nanowire resonator.

[0067] The electromagnetically excited zinc oxide nanowire resonator prepared according to this embodiment has excellent performance characteristics such as sensitivity and stability, and can be widely used in quality detection, mechanical detection, displacement detection and other fields. At the same time, the production method also has the advantages of simple process flow, low cost, easy integration and mass production.

[0068] Comparative Example 1

[0069] The difference between this comparative example and Example 1 is that, referring to the literature [Zhang Zhengmo. Direct deposition of metal film by focused ion beam. Plasma Application Technology Express. 1997(5):2], the FIB method is used to make resonator electrodes of the same thickness for zinc oxide nanowires of the same size to obtain the zinc oxide nanowire resonator of this comparative example.

[0070] Under the same test environment, an open-loop test was performed on the zinc oxide nanowire resonator. Five sets of experimental data were read and the average value was taken. The results are shown in Table 1.

[0071] Table 1

[0072] Resonance beam resistance (Ω) Quality Factor Example 1 213 1277 Comparative Example 1 337 1062

[0073] It can be seen from Table 1 that the average overall resistance of the resonant beam of the zinc oxide nanowire resonator made by the metal stripping method of Example 1 of the present application is 213Ω, while the average overall resistance of the resonant beam of the zinc oxide nanowire resonator made by the FIB method is 337Ω. Obviously, the contact between the electrode and the resonant beam made by the metal stripping method is better and the contact resistance is lower, which is conducive to improving the resonant characteristics of the resonator and is more conducive to the detection of the resonator.

[0074] The average quality factor of the zinc oxide nanowire resonator produced by the metal stripping method in Example 1 of the present application is 1277, while the average quality factor of the zinc oxide nanowire resonator produced by the FIB method is 1062. Obviously, the electrode produced by the metal stripping method has a better clamping effect on the resonance beam and a lower clamping loss during resonance, which is beneficial to improving the resonance characteristics of the resonator and the sensitivity of the resonator.

[0075] Example 2

[0076] The difference between this embodiment and embodiment 1 is that:

[0077] Adjust the type of metal material to be sputtered to silver and the sputtering speed to

[0078] The exposure dose of negative photoresist is 3.6mW / cm 2 , the developing time is 30s;

[0079] The heating rate of the high temperature tempering treatment is 5°C / min, the temperature of the insulation stage is 300°C, the time is 1h, and the cooling rate is 3°C / min.

[0080] The remaining steps and processes are all based on Example 1 to obtain the zinc oxide nanowire resonator of this embodiment. An open-loop test is performed on the resonator, and the result is equivalent to that of Example 1.

[0081] Example 3

[0082] The difference between this embodiment and embodiment 1 is that:

[0083] Adjust the type of metal material to be sputtered to silver and the sputtering speed to

[0084] The exposure dose of negative photoresist is 4.0mW / cm 2 , the developing time is 60s;

[0085] The heating rate of the high temperature tempering treatment is 10℃ / min, the temperature of the insulation stage is 350℃, the time is 3h, and the cooling rate is 5℃ / min.

[0086] The remaining steps and processes are all based on Example 1 to obtain the zinc oxide nanowire resonator of this embodiment. An open-loop test is performed on the resonator, and the result is equivalent to that of Example 1.

[0087] Comparative Example 2

[0088] The difference between this comparative example and Example 1 is that the thickness of the metal electrode 103 and the base electrode 104 in step 4) of Example 1 is adjusted to 100 nm, and the remaining steps are all referred to Example 1 to obtain the zinc oxide nanowire resonator of this comparative example.

[0089] Under the same test environment, an open-loop test was performed on the zinc oxide nanowire resonator. Five sets of experimental data were read and the average value was taken. The results are shown in Table 2.

[0090] Table 2

[0091]

[0092]

[0093] It can be seen from Table 2 that the overall average resistance of the resonant beam of the zinc oxide nanowire resonator made by the metal stripping method of Example 1 of the present application is 213Ω, while the overall average resistance of the resonant beam of Comparative Example 2 is 225Ω. Obviously, when the thickness of the metal electrode 103 and the base electrode 104 is 400nm, the contact between the electrode and the resonant beam is better and the contact resistance is lower, which is beneficial to improving the resonant characteristics of the resonator and is more conducive to the detection of the resonator.

[0094] The average quality factor of the zinc oxide nanowire resonator manufactured by the metal stripping method in Example 1 of the present application is 1277, while the average quality factor of the resonance beam in Comparative Example 2 is 1003. Obviously, the thicker the metal electrode is, the better the clamping of the electrode to the resonance beam is, and the lower the clamping loss during resonance is, which is beneficial to improving the resonance characteristics of the resonator and the sensitivity of the resonator.

[0095] Comparative Example 3

[0096] The difference between this comparative example and Example 1 is that the base electrode 104 is not prepared in this comparative example, and the remaining steps and processes are all referred to Example 1 to obtain the zinc oxide nanowire resonator of this comparative example.

[0097] Under the same test environment, an open-loop test was performed on the zinc oxide nanowire resonator. Five sets of experimental data were read and the average value was taken. The results are shown in Table 3.

[0098] Table 3

[0099] Resonance beam resistance (Ω) Quality Factor Example 1 213 1277 Comparative Example 3 213 995

[0100] It can be seen from Table 1 that the average overall resistance of the resonance beam of Comparative Example 3 is 213Ω, which is the same as the overall resistance of the resonance beam of Example 1. Obviously, whether or not the base electrode is provided has no effect on the resistance of the resonance beam.

[0101] The average quality factor of the zinc oxide nanowire resonator manufactured by the metal stripping method in Example 1 of the present application is 1277, while the average quality factor of the resonance beam in Comparative Example 3 is 995. Obviously, the tensile stress of the resonance beam can be increased by applying the electrostatic force of the resonance beam through the base electrode, which is beneficial to improving the resonance characteristics of the resonator and the sensitivity of the resonator.

[0102] In summary, compared with the FIB method, the electrode made by the metal stripping method in the present invention has better clamping of the resonance beam, lower contact resistance, and lower clamping loss. In addition, the thicker the metal electrode is, the better the clamping of the resonance beam is, the lower the contact resistance, and the lower the clamping loss. Setting a base electrode to apply electrostatic force to the resonance beam can increase the tensile stress of the resonance beam. The above optimizations are all beneficial to improving the performance of the resonator.

[0103] In addition to the above-mentioned optimization measures, the manufacturing method of the present invention can also be appropriately adjusted to adapt to different application scenarios and needs. For example, different substrate materials and electrode materials can be selected according to actual needs to reduce the manufacturing cost of the resonator and improve the stability of the resonator and other performance indicators. The substrate material can be selected from materials with good insulation properties such as aluminum oxide to reduce the manufacturing cost of the resonator, and aluminum nitride, a material with good thermal conductivity, can be selected to improve the stability of the resonator. The electrode material can be selected from metals such as copper, aluminum, and nickel to reduce the manufacturing cost of the resonator.

[0104] It can be seen that the electromagnetically excited zinc oxide nanowire resonator manufacturing method of the present invention has the characteristics of flexibility and adjustability, and can be optimized and adjusted according to actual needs to meet different application scenarios and needs. The resonator prepared by the manufacturing method of the present invention has excellent performance characteristics such as sensitivity and stability, and can be widely used in quality detection, mechanical detection, displacement detection and other fields, providing strong support for research and development in related fields.

[0105] It should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention rather than to limit it. Although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solutions of the present invention can be modified or replaced by equivalents without departing from the spirit and scope of the technical solutions of the present invention, which should be included in the scope of the claims of the present invention.

Claims

1. An electromagnetically excited zinc oxide nanowire resonator, characterized in that: Its structure includes: A base silicon wafer (100); The zinc oxide nanowire (102) is located above the base silicon wafer (100) and is tightly clamped by metal electrodes (103) at both ends; The metal electrode (103) is used to support and fix the zinc oxide nanowire (102) and is also responsible for connecting with an external circuit to realize input of an excitation signal and output of a response signal; A base electrode (104), located beside the zinc oxide nanowire (102) and not connected to the zinc oxide nanowire (102), is used to apply a bias electrostatic force to the zinc oxide nanowire (102); Negative photoresist (105), located on the surfaces of the metal electrodes (103) at both ends, serving as a protective film for the electrodes; The permanent magnet (106) is fixed below the base silicon wafer (100) and is used to generate a constant magnetic field perpendicular to the zinc oxide nanowires (102).

2. A method for preparing an electromagnetically excited zinc oxide nanowire resonator as claimed in claim 1, characterized in that: include, After the surface of the polished and oxidized silicon wafer is activated, it is sequentially cleaned, dehydrated and subjected to surface film forming treatment to obtain a pre-treated base silicon wafer (100); A layer of polymethyl methacrylate photoresist is uniformly coated on the surface of a base silicon wafer (100), and a first photoresist layer (101) is formed by pre-baking. Dispersing single crystal zinc oxide nanowires on the first photoresist layer (101) to ensure that the nanowires are evenly distributed and do not overlap, and then coating a layer of polymethyl methacrylate to form a second photoresist layer; Wherein, the single crystal zinc oxide nanowire has a diameter of 50 to 120 nm, a length of 7 to 30 μm, and an aspect ratio of 60 to 300 as the resonance beam material; The second photoresist layer is patterned exposed by using a high-precision electron beam exposure system, and the electron beam exposure area is precisely controlled to be the position of the two ends and the position beside the zinc oxide nanowire, and then developing and fixing are performed to form a zinc oxide nanowire (102) structure in which the two ends of the zinc oxide nanowire are exposed to the air and the middle is sandwiched by the photoresist; Sputtering metal onto both ends of the zinc oxide nanowire (102) structure by magnetron sputtering, and removing excess photoresist and excess metal on the photoresist, to form a structure in which both ends of the zinc oxide nanowire (102) are clamped by metal electrodes (103), and a base electrode (104) not connected to the zinc oxide nanowire (102) is present next to the structure; A layer of negative resist is coated on the surface of the metal electrode (103) and the base electrode (104), and electron beam patterning exposure, development and fixing are performed in sequence to remove the negative resist in the unexposed area to form a negative resist (105) structure; Then, the structure is subjected to high temperature annealing treatment under the protection of nitrogen or inert gas, and the permanent magnet (106) is fixed below the base silicon wafer (100), thereby obtaining a zinc oxide nanowire resonator.

3. The method for preparing an electromagnetically excited zinc oxide nanowire resonator according to claim 2, characterized in that: The activation temperature of the silicon wafer activation is 500-700K, and the activation time is 20-40 minutes.

4. The method for preparing an electromagnetically excited zinc oxide nanowire resonator according to claim 2, characterized in that: The pre-baking treatment is performed at a temperature of 380-400 K and for a time of 20-25 min.

5. The method for preparing an electromagnetically excited zinc oxide nanowire resonator according to claim 2, characterized in that: The dispersion method of the single crystal zinc oxide nanowires includes chemical vapor deposition or hydrothermal method, and the solvent used includes ethanol or isopropanol.

6. The method for preparing an electromagnetically excited zinc oxide nanowire resonator according to claim 2, characterized in that: The metal material of the sputtered metal includes gold, silver or aluminum, and the speed during the sputtering process is The vacuum degree is less than 1×10 -2 Pa.

7. The method for preparing an electromagnetically excited zinc oxide nanowire resonator according to claim 2, characterized in that: The thickness of the metal electrode (103) and the base electrode (104) is 400-800 nm.

8. The method for preparing an electromagnetically excited zinc oxide nanowire resonator according to claim 2, characterized in that: The negative photoresist is SU-8 photoresist, and the exposure dose is 3.6m~4.0mW / cm 2 , the developing time is 30 to 60 seconds.

9. The method for preparing an electromagnetically excited zinc oxide nanowire resonator according to claim 2, characterized in that: The high temperature tempering treatment includes three stages: heating, keeping warm and cooling. The heating rate in the heating stage is 5-10°C / min, the temperature in the keeping warm stage is 300°C-350°C for 1-3 hours, and the cooling rate in the cooling stage is 3-5°C / min.

10. Use of the electromagnetically excited zinc oxide nanowire resonator prepared by the preparation method according to any one of claims 2 to 9 in constructing an ultra-high sensitivity sensor.

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