Perovskite thin film surface passivation method based on piperidine derivative, perovskite solar cell and preparation method
By introducing 2D perovskite structures into 3D perovskite solar cells, the problems of energy level mismatch and high defect state density are solved, and the efficiency and stability of the device are significantly improved.
Patent Information
- Application Number
- CN202411954360.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-27
- Publication Date
- 2025-03-21
AI Technical Summary
Existing 3D perovskite solar cells have problems such as mismatch in energy levels and high defect state density, resulting in device performance attenuation and inefficiency.
The perovskite film surface passivation method based on piperidine derivatives is adopted, and the passivation perovskite film with a 2D/3D structure is formed by spin coating the perovskite precursor liquid, dropping the anti-solvent, annealing and other steps to improve interface problems.
By introducing 2D perovskite structure, the carrier recombination and defect state density are reduced, the energy level arrangement is optimized, the charge transport efficiency is improved, and the efficiency and stability of perovskite batteries are significantly improved.
Smart Images
Figure CN119677380A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of perovskite cells, and in particular to a perovskite film surface passivation method based on piperidine derivatives, a perovskite solar cell and a preparation method thereof. Background Art
[0002] Perovskite solar cells and their derived tandem cell technology are gradually showing great potential to replace traditional silicon-based solar cells and herald broad prospects for commercial applications.
[0003] Although the efficiency of perovskite solar cells is now close to that of silicon-based solar cells, stability is still an issue to be resolved. In addition, the current record efficiency of perovskite cells is still a certain distance away from the theoretical value. This is mainly due to the accumulation of charges at the interface, which causes non-radiative recombination of carriers, resulting in device performance degradation. In addition, traditional 3D perovskite solar cells also have problems such as energy level mismatch and high defect state density, which limit the efficiency of the cell. Introducing a 2D perovskite structure on the surface of a 3D perovskite can reduce carrier recombination, reduce defect state density, and effectively improve interface problems.
[0004] Therefore, in order to obtain perovskite solar cells with better performance, it is necessary to explore appropriate strategies to construct 2D / 3D structures. Summary of the invention
[0005] In view of the problems of energy level mismatch and high defect state density in 3D perovskite solar cells in the prior art, the present invention provides a perovskite film surface passivation method based on piperidine derivatives, a perovskite solar cell and a preparation method.
[0006] The present invention is achieved through the following technical solutions: A method for passivating the surface of a perovskite film based on a piperidine derivative comprises the following steps: S1, spin coating the perovskite precursor solution, and adding the anti-solvent during the spin coating process to obtain a perovskite wet film; S2, performing the first annealing on the perovskite wet film to obtain a perovskite film; S3, cooling the perovskite film to room temperature, spin coating or evaporating a p-CF3PiP solution on the perovskite film, and performing a second annealing to obtain a passivated perovskite film with a 2D / 3D structure of a piperidine derivative.
[0007] Preferably, in S1, FA x Cs 1-x PbI 3-y-z Br y Cl zThe mixture is dissolved in a polar solvent of DMSO / DMF, the mixed solution is sealed, and after being fully dissolved, the solution is filtered to obtain a clear perovskite precursor solution.
[0008] Preferably, the concentration of the perovskite precursor solution is 1-1.7 M; and the anti-solvent is ethyl acetate solution.
[0009] Preferably, in S2, during the first annealing, the temperature is 100-150° C. and the time is 15-30 min.
[0010] Preferably, in S3, the preparation method of the p-CF3PiP solution is: dilute the p-CF3PiP with a weak polar solvent and gently shake it to make it evenly distributed, and the weak polar solvent is isopropanol, chlorobenzene or methanol.
[0011] Preferably, in S3, the concentration of the p-CF3PiP solution is 10-50 μL / ml.
[0012] Preferably, in S3, during the second annealing, the temperature is 70-100° C. and the time is 1-5 min.
[0013] A product is obtained according to the 2D / 3D structure preparation method based on piperidine derivatives.
[0014] A method for preparing a perovskite solar cell comprises the following steps: S1, cleaning the substrate, the substrate is a FTO glass substrate or a flexible ITO substrate; S2, preparing a hole transport layer on a FTO glass substrate; S3, preparing a passivated perovskite film having a 2D / 3D structure of a piperidine derivative obtained by the perovskite film surface passivation method based on a piperidine derivative on the hole transport layer; S4, preparing a PCBM electron transport layer on the perovskite light absorption layer; S5, preparing a bathocuproin BCP blocking layer on the PCBM electron transport layer; S6, evaporating a silver electrode on the bathocuproin BCP barrier layer to obtain a perovskite battery device.
[0015] A product obtained by the method for preparing a perovskite solar cell.
[0016] Compared with the prior art, the present invention has the following beneficial effects: The present invention discloses a method for surface passivation of perovskite thin films based on piperidine derivatives, which provides a highly adaptable, low-cost, and easy-to-prepare interface passivation strategy for the perovskite absorption layer between perovskite cells. The method can be adapted to formal and inverted perovskite solar cells, can be applied to perovskite solar cells with different band gaps, and is suitable for flexible devices. The nitrogen atoms in the piperidine molecules are combined with the [PbI6] dissolved by IPA on the surface of the 3D perovskite. 4− The octahedral framework and some perovskite components are chemically bonded to change the original structure of ABX3, forming a layered two-dimensional crystal structure, and forming a two-dimensional perovskite capping layer on the surface of the three-dimensional perovskite. The prepared 2D perovskite layer contains trifluoromethyl functional groups that can form hydrogen bonds at the A position of the perovskite. At the same time, fluorine has hydrophobic properties, which can significantly reduce the adverse effects of moisture on the perovskite film and improve the stability of the device. This 2D / 3D structure passivates surface defects such as dangling bonds, interstitial defects and vacancy defects on the interface; optimizes the energy level arrangement to promote the transport of carriers at the interface between the perovskite and the charge transport layer; and enhances the resistivity through the hydrophobic long-chain groups in the two-dimensional perovskite. By limiting the strong interaction between the two-dimensional organic cations and iodide, the ion migration is suppressed, and the thermal stability is improved; the inner layer electric field is constructed, which promotes charge extraction, suppresses ion migration, and significantly improves the efficiency and photoelectric performance of the perovskite battery. At the same time, the 2D perovskite layer can improve the perovskite surface band structure, optimize the transport and extraction of carriers, and thus improve the device performance.
[0017] From the perspective of pharmaceutical use, the piperidine derivative is a liquid at room temperature and is miscible with most organic solvents. Therefore, different solvents can be selected as needed during processing. When applied to a large area, the solution can be directly evaporated in a confined space to prepare a 2D structure.
[0018] The present invention discloses a method for preparing a perovskite solar cell, which can reduce carrier recombination, lower defect state density, and effectively improve interface problems by introducing a 2D perovskite structure on the surface of a 3D perovskite layer. BRIEF DESCRIPTION OF THE DRAWINGS
[0019] Figure 1 This is a flow chart of a method for passivating the surface of a perovskite film based on a piperidine derivative according to the present invention; Figure 2 This is a flow chart of a method for preparing a perovskite solar cell according to the present invention; Figure 3 This is an X-ray diffraction (XRD) comparison diagram of a 2D / 3D perovskite film and a 3D perovskite film prepared by the method described in Example 1 of the present invention; Figure 4 This is a surface morphology image of a 2D / 3D perovskite film prepared by the method described in Example 1 of the present invention; Figure 5Surface morphology of 3D perovskite film; Figure 6 A comparison diagram of the water contact angles on the surfaces of the 2D / 3D perovskite film and the 3D perovskite film prepared by the method described in Example 1 of the present invention; Figure 7 A comparison diagram of the space charge confinement electric field of a 2D / 3D perovskite film and a 3D perovskite film prepared by the method described in Example 1 of the present invention; Figure 8 This is a diagram of the photoelectric conversion efficiency of the device with 2D / 3D and 3D structures at a band gap of 1.55 eV prepared by the method described in Example 1 of the present invention; Fig. 9 The photoelectric conversion efficiency diagram of the device with 2D / 3D and 3D structures prepared by the method described in Example 1 of the present invention at a band gap of 1.68 eV; Fig.10 The JV curve of the device of perovskite on a flexible substrate prepared by the method described in Example 3 of the present invention; Fig.11 This is a comparison chart of the external quantum efficiencies of devices with 2D / 3D and 3D structures prepared by the method described in Example 1 of the present invention. DETAILED DESCRIPTION
[0020] The present invention is further described in detail below in conjunction with specific embodiments, which are intended to explain the present invention rather than to limit it.
[0021] The present invention discloses a method for passivating the surface of a perovskite film based on a piperidine derivative, referring to Figure 1 , including the following steps: S1, spin coating the perovskite precursor solution, and adding anti-solvent during the spin coating process to obtain a perovskite wet film.
[0022] Among them, FA x Cs 1-x PbI 3-y-z Br y Cl z (The raw materials for its preparation include FAI, CsI, PbI2, PbBr2 and PbCl2, and the drugs used are all from Liaoning Youxuan New Energy Technology Co., Ltd.) dissolved in a DMSO / DMF mixed polar solvent, the mixed solution is sealed, and after fully dissolved, filtered to obtain a clear perovskite precursor solution with a concentration of 1~1.7M. Among them, FA x Cs 1- x PbI 3-y-z Br y Cl z In the above example, no matter what the values of x and y are, a 2D film can be generated. 0.9 Cs0.1 PbI 0.85 Br 0.15 .
[0023] S2, performing a first annealing on the perovskite wet film to obtain a perovskite thin film; wherein the first annealing is used to promote the crystallization of the perovskite material, the temperature is 100~150℃, and the time is 15~30min.
[0024] S3, cooling the perovskite film to room temperature, spin coating or evaporating a p-CF3PiP (Shanghai McLean Biochemical Technology Co., Ltd., 98%) solution with a concentration of 10~50 μL / ml on the perovskite film, and performing a second annealing to induce p-CF3PiP to react with the perovskite to obtain a passivated perovskite film with a 2D / 3D structure of a piperidine derivative. The p-CF3PiP solution is prepared by diluting the p-CF3PiP with a weak polar solvent and gently shaking it to make it evenly distributed, and the weak polar solution is isopropanol, chlorobenzene or methanol. During the second annealing, the temperature is 70~100°C and the time is 1~5min.
[0025] The present invention also discloses a product obtained according to a 2D / 3D structure preparation method based on piperidine derivatives.
[0026] The present invention also discloses a method for preparing a perovskite solar cell. Figure 2 , including the following steps: S1, cleaning the FTO glass substrate; specifically, taking the fluorine-doped SnO2 (FTO) transparent conductive glass, ultrasonically cleaning it with acetone, isopropanol, ethanol and ultrapure water for 30 minutes each, drying it, and ultraviolet ozone for 10-15 minutes to remove surface organic impurities and improve the wettability of the FTO surface; S2, preparing a hole transport layer on a FTO glass substrate; specifically, the hole transport layer can be nickel oxide, PTAA, PEDOT:PSS, a self-assembled monolayer (including but not limited to Me-4PACz and 2PACz, etc.), spin coating or vacuum depositing the above hole transport layer on the surface of the FTO substrate, and annealing at 100-200° C. for 10-60 minutes.
[0027] S3, preparing a passivated perovskite film having a 2D / 3D structure of a piperidine derivative obtained by a perovskite film surface passivation method based on a piperidine derivative on the hole transport layer; S4, preparing a PCBM electron transport layer on the perovskite light absorption layer; specifically, cooling the perovskite light absorption layer to room temperature, spin coating the PCBM solution on the surface of the perovskite light absorption layer to form an electron transport layer; the solvent of the PCBM solution is chlorobenzene. PCBM can be replaced with a C60 electron transport layer prepared by thermal evaporation, with a thickness of 5 to 20 nm.
[0028] S5, prepare a bathocuproin BCP barrier layer on the PCBM electron transport layer; specifically, spin coat or evaporate the BCP solution on the surface of the electron transport layer to form a barrier layer, and the solvent of the BCP solution is isopropanol. BCP can be vacuum thermally evaporated and deposited on the surface of the electron transport layer with a thickness of 3~8 nm. BCP can be replaced by atomic layer deposition SnO x , with a thickness of 10-50 nm.
[0029] S6, evaporate 80~120 nm silver electrode on the bathocuproin BCP barrier layer to obtain a perovskite cell device.
[0030] The invention also discloses a product obtained by the method for preparing a perovskite solar cell. Comparative Example Step 1, cleaning the substrate, the substrate is a FTO glass substrate or a flexible ITO substrate; When choosing FTO glass substrate: Select fluorine-doped SnO2 (FTO) transparent conductive glass (2.5*2.5 cm 2 ), wipe off the surface impurities with dust-free paper, and then use acetone, isopropanol, ethanol and ultrapure water for ultrasonic cleaning for 30 minutes each, blow dry, and treat with UV ozone for 10 minutes.
[0031] Step 2, preparing a hole transport layer: Firstly, nickel oxide nanoparticles were dispersed in 1 mL of ultrapure water and ultrasonically dispersed to form an aqueous solution of nickel oxide nanoparticles. The aqueous solution of nickel oxide nanoparticles was spin-coated on the surface of the FTO substrate. After annealing, a nickel oxide hole transport layer was obtained. Subsequently, the substrate was transferred to a glove box and spin-coated with an ethanol solution of a self-assembled monolayer (SAM) material. After annealing, a nickel oxide / SAM hole transport layer was obtained.
[0032] Step 3, preparing the perovskite light absorption layer: FA x Cs 1-x PbI 3-y-z Br y Cl z Dissolve in a DMSO / DMF mixed solvent; seal the mixed solution, stir it thoroughly, and filter it to obtain a clear perovskite solution for later use; The perovskite precursor solution is uniformly coated on the surface of the nickel oxide / SAM substrate; the perovskite wet film is obtained by spin coating and then placed on a hot plate at 110° C. for annealing for 20 minutes to obtain a perovskite film; Step 4: Preparation of PCBM transport layer: The PCBM chlorobenzene solution was spin-coated on the perovskite film to obtain the electron transport layer.
[0033] Step 5, preparation of BCP barrier layer: The BCP solution was spin-coated on the surface of the PCBM layer to obtain a barrier layer with a thickness of 3 nm.
[0034] Step 6, Ag electrode evaporation: The prepared film is transferred into the evaporation chamber and an 80 nm thick Ag electrode is evaporated using thermal evaporation.
[0035] Example 1 Step 1, cleaning the substrate, the substrate is a FTO glass substrate or a flexible ITO substrate; When choosing FTO glass substrate: Select fluorine-doped SnO2 (FTO) transparent conductive glass (2.5*2.5 cm 2 ), wipe off the surface impurities with dust-free paper, and then use acetone, isopropanol, ethanol and ultrapure water for ultrasonic cleaning for 30 minutes each, blow dry, and treat with UV ozone for 10 minutes.
[0036] Step 2, preparing a hole transport layer: Firstly, nickel oxide nanoparticles were dispersed in 1 mL of ultrapure water and ultrasonically dispersed to form an aqueous solution of nickel oxide nanoparticles. The aqueous solution of nickel oxide nanoparticles was spin-coated on the surface of the FTO substrate. After annealing, a nickel oxide hole transport layer was obtained. Subsequently, the substrate was transferred to a glove box and spin-coated with an ethanol solution of a self-assembled monolayer (SAM) material. After annealing, a nickel oxide / SAM hole transport layer was obtained.
[0037] Step 3, preparing the perovskite light absorption layer: FA x Cs 1-x PbI 3-y-z Br y Cl z Dissolve in a DMSO / DMF mixed solvent; seal the mixed solution, stir it thoroughly, and filter it to obtain a clear perovskite solution for later use; The perovskite precursor solution is uniformly coated on the surface of the nickel oxide substrate; the perovskite wet film is obtained by spin coating and then annealed on a hot plate at 110° C. for 20 minutes to obtain a perovskite film.
[0038] 2D / 3D perovskite structure construction: After the annealed perovskite film cools to room temperature, the p-CF3PiP solution is spin-coated on the perovskite film and annealed at 80°C for 2 minutes to form a 2D / 3D perovskite structure.
[0039] Step 4: Preparation of PCBM transport layer: The PCBM chlorobenzene solution was spin-coated on the perovskite film to obtain the electron transport layer.
[0040] Step 5, preparation of BCP barrier layer: The BCP solution was spin-coated on the surface of the PCBM layer to obtain a barrier layer with a thickness of 3 nm.
[0041] Step 6, Ag electrode evaporation: The prepared film was transferred into the evaporation chamber and an 80 nm thick Ag electrode was deposited by thermal evaporation. The effective area of the mask was 0.09 cm 2 .
[0042] A Keithley 2400 light source was used to simulate 1 sun AM 1.5G light (100 mW / cm 2 ), the JV characteristics of the solar cell were obtained using an Enlitech solar simulator (SS-F5-3A), and the light intensity was calibrated with a silicon photodiode. The JV measurement was carried out in ambient air, and the device was reversely scanned (from 1.3 V to -0.1 V, with a step size of 0.01 V), and the efficiency was measured to be 25.95%. Compared with the efficiency of 23.50% without constructing a 2D / 3D perovskite structure, the performance was improved by 10.55%, and the open circuit voltage increased from 1.154 V to 1.187 V, indicating that this 2D / 3D structure is beneficial to reduce defects in the device, thereby achieving higher performance.
[0043] Figure 3 The X-ray diffraction patterns of the perovskite film before and after optimization show that the perovskite film (p-CF3PiP) with a 2D / 3D structure produced a two-dimensional phase at 2Theta≈10.5° compared to the control group (Control).
[0044] Figure 4 , 5 The scanning electron microscope images of the perovskite film before and after optimization show that compared with the control group (Control), the perovskite film (p-CF3PiP) with a 2D / 3D structure clearly has a strip-like and flake-like two-dimensional structure.
[0045] Figure 6 The surface water contact angle of the perovskite film before and after optimization. It can be proved from the figure that compared with the control group (Control), the perovskite film (p-CF3PiP) with a 2D / 3D structure has a larger water contact angle, which means that the surface has better hydrophobicity, which is beneficial to improve the stability of the device.
[0046] Figure 7 The space charge limited electric field diagram of the device before and after optimization, the perovskite film with 2D / 3D structure shows a lower defect state density, which corresponds to the increase of the open circuit voltage of the device.
[0047] Figure 8 , 9, 10 are the JV curves of perovskite devices at 1.55 band gap, 1.68 band gap and on flexible substrates. It can be seen that the perovskite film (p-CF3PiP) with 2D / 3D structure can obtain better optoelectronic performance at different band gaps and can be adapted to flexible processes.
[0048] Fig.11 This is the external quantum efficiency curve of the device before and after optimization. It can be seen from the figure that compared with the control group (CT) device, the perovskite film (p-CF3PiP) device with a 2D / 3D structure has a better short-circuit current density.
[0049] Example 2 Step 1, cleaning FTO glass substrate: Select fluorine-doped SnO2 (FTO) transparent conductive glass (2.5*2.5 cm 2 ), wipe off the surface impurities with dust-free paper, then use acetone, isopropanol, ethanol and ultrapure water for ultrasonic cleaning for 30 minutes each, blow dry, and treat with UV ozone for 10 minutes; Step 2, preparing a hole transport layer: Firstly, nickel oxide nanoparticles were dispersed in 1 mL of ultrapure water, and ultrasonic dispersion was performed to prepare a nickel oxide nanoparticle aqueous solution. The nickel oxide nanoparticle aqueous solution was spin-coated onto the surface of the FTO substrate, and a nickel oxide hole transport layer was obtained after annealing. Subsequently, the substrate was transferred to a glove box, and an ethanol solution of a self-assembled monolayer (SAM) material was spin-coated, and a nickel oxide / SAM hole transport layer was obtained after annealing. Step 3, preparing a perovskite light absorption layer; The FA with a band gap of 1.68 eV x Cs 1-x PbI 3-y-z Br y Cl z Dissolve in a DMSO / DMF mixed solvent; seal the mixed solution, stir it thoroughly, and filter it to obtain a clear perovskite solution for use; evenly coat the perovskite precursor solution on the surface of the hole transport layer substrate; spin coat the perovskite wet film and anneal it on a hot plate at 110°C for 20 minutes to obtain a perovskite film.
[0050] 2D / 3D perovskite structure construction: After the annealed perovskite film cools to room temperature, the p-CF3PiP solution is spin-coated on the perovskite film and annealed at 80°C for 2 minutes to form a 2D / 3D perovskite structure.
[0051] Step 4: Preparation of PCBM transport layer: The PCBM chlorobenzene solution was spin-coated on the perovskite film to obtain the electron transport layer.
[0052] Step 5, preparation of BCP barrier layer: The BCP solution was spin-coated on the surface of the PCBM layer to obtain a barrier layer with a thickness of 3 nm.
[0053] Step 6, Ag electrode evaporation: The prepared film was transferred into the evaporation chamber and an 80 nm thick Ag electrode was deposited by thermal evaporation. The effective area of the mask was 0.09 cm 2 .
[0054] The JV characteristics of the solar cell were obtained using a Keithley 2400 light source meter under simulated 1 sun AM 1.5G illumination (100mW / cm2) using an Enlitech solar simulator (SS-F5-3A), and the light intensity was calibrated using a silicon photodiode. The JV measurement was performed in ambient air, and the device was reversely scanned (from 1.5 V to -0.1 V, with a step size of 0.01 V). The efficiency was measured to be 22.72%, which is 6.52% higher than the 21.33% efficiency of the unconstructed 2D / 3D perovskite structure. This shows that this 2D / 3D structure is suitable for perovskite solar cells with different band gaps and has good adaptability.
[0055] Example 3 Step 1, cleaning the flexible ITO substrate: Select polyethylene terephthalate (PET), polyethylene naphthalate (PEN), etc. (2.5*2.5 cm 2 ), wipe the surface impurities with dust-free paper, then use a nitrogen air gun to blow, and treat with UV ozone for 10 minutes; Step 2, preparing a hole transport layer: Firstly, nickel oxide nanoparticles were dispersed in 1 mL of ultrapure water, and ultrasonic dispersion was performed to prepare a nickel oxide nanoparticle aqueous solution. The nickel oxide nanoparticle aqueous solution was spin-coated onto the surface of the FTO substrate, and a nickel oxide hole transport layer was obtained after annealing. Subsequently, the substrate was transferred to a glove box, and an ethanol solution of a self-assembled monolayer (SAM) material was spin-coated, and a nickel oxide / SAM hole transport layer was obtained after annealing. Step 3, preparing a perovskite light absorption layer; FA x Cs 1-x PbI 3-y-z Br y Cl z Dissolve in DMSO / DMF mixed solvent; seal the mixed solution, stir thoroughly, and filter to obtain a clear perovskite solution for use; evenly coat the perovskite precursor solution on the surface of the hole transport layer substrate; spin coat to obtain a perovskite wet film and then anneal it on a 100°C hot plate for 20 minutes to obtain a perovskite film. ; 2D / 3D perovskite structure construction: After the annealed perovskite film cools to room temperature, the p-CF3PiP solution is spin-coated on the perovskite film and annealed at 80°C for 2 minutes to form a 2D / 3D perovskite structure.
[0056] Step 4: Preparation of PCBM transport layer: The PCBM chlorobenzene solution was spin-coated on the perovskite film to obtain the electron transport layer.
[0057] Step 5, preparation of BCP barrier layer: The BCP solution was spin-coated on the surface of the PCBM layer to obtain a barrier layer with a thickness of 3 nm.
[0058] Step 6, Ag electrode evaporation: The prepared film was transferred into the evaporation chamber and an 80 nm thick Ag electrode was deposited by thermal evaporation. The effective area of the mask was 0.09 cm 2 .
[0059] Step 7: Use a Keithley 2400 light source meter to simulate 1 sun AM 1.5G light (100mW / cm 2 ), the JV characteristics of the solar cell were obtained using an Enlitech solar simulator (SS-F5-3A), and the light intensity was calibrated with a silicon photodiode. The JV measurement was performed in ambient air, and the device was reversely scanned (from 1.3 V to -0.1 V, with a step size of 0.01 V). The device efficiency was obtained to be 23.91%, indicating that this 2D / 3D structure can also be used on flexible substrates.
[0060] The above description is only a preferred embodiment of the present invention and is not intended to impose any limitation on the technical solution of the present invention. Those skilled in the art should understand that, without departing from the spirit and principles of the present invention, the technical solution can also be subjected to several simple modifications and substitutions, and these modifications and substitutions are also within the scope of protection covered by the claims.
Claims
1. A method for passivating the surface of a perovskite film based on a piperidine derivative, characterized in that: The following steps are involved: S1, spin coating the perovskite precursor solution, and adding the anti-solvent during the spin coating process to obtain a perovskite wet film; S2, performing the first annealing on the perovskite wet film to obtain a perovskite film; S3, cooling the perovskite film to room temperature, spin coating or evaporating a p-CF3PiP solution on the perovskite film, and performing a second annealing to generate a passivated perovskite film having a 2D / 3D structure of a piperidine derivative on the perovskite.
2. The method for surface passivation of a perovskite film based on a piperidine derivative according to claim 1, characterized in that: In S1, FA x Cs 1-x PbI 3-y-z Br y Cl z The mixture is dissolved in a polar solvent of DMSO / DMF, the mixed solution is sealed, and after being fully dissolved, the solution is filtered to obtain a clear perovskite precursor solution.
3. The method for surface passivation of a perovskite film based on a piperidine derivative according to claim 2, characterized in that: The concentration of the perovskite precursor solution is 1~1.7M; the anti-solvent is ethyl acetate solution.
4. The method for surface passivation of a perovskite film based on a piperidine derivative according to claim 1, characterized in that: In S2, during the first annealing, the temperature is 100~150℃ and the time is 15~30min.
5. The method for surface passivation of a perovskite film based on a piperidine derivative according to claim 1, characterized in that: In S3, the p-CF3PiP solution is prepared by diluting the p-CF3PiP with a weak polar solvent and gently shaking it to make it evenly distributed, and the weak polar solvent is isopropanol, chlorobenzene or methanol.
6. The method for surface passivation of a perovskite film based on a piperidine derivative according to claim 1, characterized in that: In S3, the concentration of p-CF3PiP solution is 10~50 μL / ml.
7. The method for surface passivation of a perovskite film based on a piperidine derivative according to claim 1, characterized in that: In S3, during the second annealing, the temperature is 70~100°C and the time is 1~5 minutes.
8. A product obtained by the method for surface passivation of a perovskite film based on a piperidine derivative according to any one of claims 1 to 7.
9. A method for preparing a perovskite solar cell, characterized in that: The steps include: S1, cleaning the substrate, the substrate is a FTO glass substrate or a flexible ITO substrate; S2, preparing a hole transport layer on a FTO glass substrate; S3, preparing a passivated perovskite film having a 2D / 3D structure of a piperidine derivative obtained by the surface passivation method of a perovskite film based on a piperidine derivative according to any one of claims 1 to 7 on the hole transport layer; S4, preparing a PCBM electron transport layer on the perovskite light absorption layer; S5, preparing a bathocuproin BCP blocking layer on the PCBM electron transport layer; S6, evaporating a silver electrode on the bathocuproin BCP barrier layer to obtain a perovskite battery device.
10. A product obtained by the method for preparing a perovskite solar cell according to claim 9.