MEMS mirror array with reduced inter-mirror coupling

Abstract

A MEM array may include a first stage including a first stage reflective surface and a second stage including a second stage reflective surface. The MEM array may include: a substrate wafer underlying the first stage and the second stage; and a first frame pivotally coupled to the first platform. The first frame may be pivotally coupled to a second frame, which may include a second frame high aspect ratio (AR) member, which may be used to reduce mechanical motion of the second platform.

Description

[0001] Citations of Related Applications

[0002] This application claims priority to U.S. Application No. 18 / 352,357, filed on July 14, 2023, which claims the benefit of U.S. Provisional Application No. 63 / 391,667, filed on July 22, 2022, entitled “MEMS Mirror Array with Reduced Mirror-to-Mirror Coupling,” the entire contents of which are incorporated herein by reference. Background Art

[0003] A micromirror device is a microelectromechanical system (MEMS) in which a voltage can be applied between two electrodes in the device to control the state. Adjusting the state of the micromirror device can control the intensity and direction of light. Micromirror devices have various applications in video projection, microscopy, and optics. Summary of the invention

[0004] A MEMS mirror array and method of manufacturing the array that reduces coupling between adjacent mirrors in the array is disclosed.

[0005] A microelectromechanical (MEM) array may include: a first platform including a first platform reflective surface; a second platform including a second platform reflective surface; a substrate wafer located below the first platform and the second platform; and a first frame pivotally coupled to the first platform. The first frame may be pivotally coupled to the second frame, the second frame including a second frame high aspect ratio (AR) member that may be used to reduce mechanical movement of the second platform. The mechanical movement may include harmonic resonance. The second frame high AR member may be positioned to contact a mirror cavity wall of the first platform. The contact between the second frame high AR member and the mirror cavity wall may be used to reduce mechanical movement of the second platform.

[0006] The second frame may include an additional second frame high AR member. The additional second frame high AR member may be positioned to contact the mirror cavity wall of the first platform. The contact between the additional second frame high AR member and the mirror cavity wall may be operable to reduce the mechanical movement of the second platform. The additional second frame high AR member may be substantially parallel to the second frame high AR member. The second frame high AR member and the additional second frame high AR member may have overlapping x-axis coordinates. The second frame may include one or more side members. The one or more side members may be substantially perpendicular to the second frame high AR member. The second frame may be substantially free of orifices.

[0007] The second frame high AR member can be positioned to contact the mirror cavity wall of the first platform, and the first frame can be pivotally coupled to: a third frame, including a third frame high AR member positioned to contact the mirror cavity wall, a fourth frame, including a fourth frame high AR member positioned to contact the mirror cavity wall, and a fifth frame, including a fifth frame high AR member positioned to contact the mirror cavity wall. The substrate wafer may include a support anchor that can be used to reduce mechanical movement of the second platform. The second frame can be a fixed frame. The substrate wafer can include a silicon wafer. The first platform reflective surface can have a first resonant frequency. The second platform reflective surface can have a second resonant frequency.

[0008] A microelectromechanical (MEM) actuator array may include: a first platform including a first platform reflective surface; a second platform including a second platform reflective surface; a substrate wafer located below the first platform and the second platform; and a first frame pivotally coupled to the first platform. The first frame may be pivotally coupled to a first fixed frame. The first fixed frame may be coupled to a first fixed frame support anchor, which may be used to reduce mechanical movement of the second platform. The first fixed frame AR member may be positioned to contact a mirror cavity wall of the first platform.

[0009] The MEM actuator may include an additional first fixed frame AR member, which may be positioned to contact the mirror cavity wall of the first platform. The additional first fixed frame AR member may be substantially parallel to the first fixed frame high AR member. The additional first fixed frame AR member and the first fixed frame AR member may have overlapping x-axis coordinates. The first fixed frame may include one or more side members. The one or more side members may be substantially perpendicular to the first fixed frame high AR member. The first fixed frame may be substantially free of orifices. The substrate wafer may include a support anchor located between the first platform and the second platform to reduce mechanical movement of the second platform.

[0010] The MEM actuator may include: a second fixed frame, which can be coupled to a second fixed frame support anchor, and the second fixed frame support anchor can be used to reduce the mechanical movement of the third platform; a third fixed frame, which can be coupled to a third fixed frame support anchor, and the third fixed frame support anchor can be used to reduce the mechanical movement of the fourth platform; and a fourth fixed frame, which can be coupled to a fourth fixed frame support anchor, and the fourth fixed frame support anchor can be used to reduce the mechanical movement of the fifth platform.

[0011] A method for reducing coupling between adjacent platforms in a microelectromechanical (MEM) array may include: coupling a movable frame to a platform having a reflective surface and to a fixed frame; and reducing the transfer of mechanical motion from the platform to an adjacent platform by one or more of the following: coupling one or more fixed frame high aspect ratio (AR) members to the fixed frame, or coupling one or more fixed frame support anchors to the fixed frame. The one or more fixed frame high aspect ratio (AR) members may be positioned to contact a mirror cavity wall. The one or more fixed frame support anchors have a selected surface area that is oriented toward a surface area of ​​one or more side members of the fixed frame. The fixed frame may include one or more side members that may be substantially perpendicular to the one or more fixed frame high AR members. The fixed frame may be substantially free of orifices.

[0012] A method for manufacturing a microelectromechanical (MEM) array may include: forming a dielectric material layer on a first side of a substrate; forming vertical isolation trenches containing dielectric material on the first side of the substrate; patterning a mask layer on a second side of the substrate opposite the first side of the substrate; forming a through hole on the first side of the substrate; metallizing the first side of the substrate; depositing a second metal layer on the first side of the substrate to form a reflective surface; forming a second trench on the first side of the substrate to define a structure; deep etching the second side of the substrate to form a narrow blade; bonding a base wafer to the second side of the substrate after forming the narrow blade; and etching through the second trench on the first side of the substrate to release the structure and provide electrical insulation. The method may include forming a passivation dielectric layer on the first side of the substrate after metallizing the first side of the substrate. The MEM array may include: a first platform including a first platform reflective surface; a second platform including a second platform reflective surface; a substrate wafer located below the first platform and the second platform; and a first frame pivotally coupled to the first platform, wherein the first frame is pivotally coupled to the second frame, the second frame including one or more of the following: a second frame high aspect ratio (AR) member, or a second frame support anchor. The substrate may include a silicon wafer. The dielectric may be silicon dioxide.

[0013] The foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosed embodiments, as claimed.

[0014] Literature incorporated into this article by citation

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[0113] The novel features of the present invention are particularly set forth in the appended claims. A better understanding of the features and advantages of the present invention will be obtained by referring to the following detailed description and the accompanying drawings, which set forth illustrative embodiments utilizing the principles of the present invention, wherein:

[0114] Figure 1A A portion of a micromirror array is shown; Figure 1B is a plan view of the micromirror and surrounding structures;

[0115] FIG. 2A to FIG. 2B Shown along Figure 1A A cross section of a variation of the micromirror array taken along line 1-1 in FIG.

[0116] 3A to 3H shows the simulated modal analysis of the micromirror;

[0117] FIG. 4A to FIG. 4C shows a simulated application of force to a micromirror and the effect of the force on adjacent micromirrors;

[0118] FIG. 5A to FIG. 5C The micromirror and surrounding structures as well as the effects of applied forces are shown;

[0119] FIG. 5D to FIG. 5E The micromirror and surrounding structures are shown;

[0120] FIG. 6A to FIG. 6B A micromirror is shown with the holes removed and high aspect ratio members added to support the fixed frame, and the effects of applying a force are shown;

[0121] FIG. 7A to FIG. 7B Additional configurations of the micromirror are shown, where high aspect ratio members are added to support the fixed frame.

[0122] Figure 8 A process flow for reducing coupling between adjacent platforms in a microelectromechanical (MEM) array is shown;

[0123] FIG. 9A to FIG. 9K A method of manufacturing a MEM array is shown; and

[0124] FIG. 10A to FIG. 10C Another variation is shown before bonding. DETAILED DESCRIPTION

[0125] When a voltage is applied between two electrode plates, a microelectromechanical system (MEMS) can generate an attractive force that may cause rotation. The maximum rotation can be determined by the gap between the two electrode plates. As the size of the gap between the two electrode plates increases, a higher voltage is used to achieve the same force. Therefore, the voltage used to move the electrode plates may be high, nonlinear and variable.

[0126] In order for rotation to occur, the MEMS may include a release structure having: (i) a high aspect ratio (AR) member, wherein the longitudinal length of the member is at least five times the lateral length of the member, or (ii) a member separated from another structure by a gap, the gap defining a space with a high AR. The high AR member and / or the associated gap can be used to provide a large capacitance. In the case of an electrostatic motor, the high capacitance can contribute to the high electrostatic force between the release structure and the surrounding drive electrodes. The high electrostatic force allows the release structure to be actuated to a larger distance or a larger angle at a lower applied voltage, which can be used to enhance the performance of the electrostatic motor. For MEMS implementations that do not use a large actuation angle, the high electrostatic force allows the flexure to be mechanically stiffer to increase the resonant frequency of the release structure and the overall reliability of the device in the operating environment.

[0127] Fill factor can affect MEMS. For a micromirror array, the fill factor can be the ratio of the effective reflective area to the total continuous area occupied by the mirror array. To maximize the fill factor, the high aspect ratio member has a first dimension and a second dimension, wherein one of the two dimensions is longer than the other. The high aspect ratio member can be suspended in a manner such that the longest dimension is oriented perpendicular to the surface of the mirror, as described for an actuator member in commonly assigned U.S. Patent 6,753,638.

[0128] For micromirrors that increase the gap size and thereby increase the electrostatic force used, or increase the fill factor and thereby reduce the distance between adjacent micromirrors, coupling between different micromirrors may result when a particular micromirror moves. Placing support anchors between mirrors reduces coupling, but more reduction is possible. Further coupling (e.g., crosstalk) caused by torque applied at fixed electrodes can be reduced by one or more of the following: (i) configuring one or more high AR members to contact the mirror cavity wall, (ii) adding additional anchors near the electrodes, (iii) orienting one or more high AR members perpendicular to one or more flanking members, etc.

[0129] The MEM array may include: a first platform including a first platform reflective surface (e.g., which may have a first resonant frequency), and a second platform including a second platform reflective surface (e.g., which may have a second resonant frequency). The MEM array may include a substrate wafer (e.g., a silicon wafer) located below the first platform and the second platform; and a first frame pivotally coupled to the first platform. The first frame may be pivotally coupled to a second frame (e.g., a fixed frame), which may include a second frame high AR member. The second frame high AR member may be used to reduce the mechanical motion of the second platform (e.g., the resonant amplitude of the vibration).

[0130] The MEM actuator may include: a first platform including a first platform reflective surface; and a first frame pivotally coupled to the first platform. The MEM actuator may include a second platform including a second platform reflective surface. The MEM actuator may include a substrate wafer located below the first platform and the second platform. The first frame may be pivotally coupled to a first fixed frame, the first fixed frame may include a first fixed frame support anchor, and the first fixed frame support anchor may be used to reduce mechanical movement of the second platform.

[0131] A method for reducing coupling between adjacent platforms in a MEMs array comprises: coupling a movable frame to a platform including a reflective surface and a fixed frame; and reducing the transfer of mechanical motion from the platform to the adjacent platform by one or more of: coupling one or more fixed frame high AR members to the fixed frame, or coupling one or more fixed frame support anchors to the fixed frame.

[0132] Methods for making a MEM array as disclosed herein are provided.

[0133] I. Micro-electromechanical (MEM) Arrays

[0134] Figure 1AA top view portion of a MEM array 100 for an array of micromirror electrostatic actuators (e.g., mirror units) is shown. The MEM array 100 may include a first platform 112a (e.g., a center platform) that may include a first platform reflective surface (e.g., a metal layer that may be operable as a mirror and may have a first resonant frequency). The MEM array 100 may include a second platform 112b (e.g., a center platform of a different mirror unit) that may include a second platform reflective surface (e.g., a metal layer that may be operable as a mirror and may have a second resonant frequency). The first platform 112a may be pivotally coupled to a first frame (e.g., a movable frame 140). The first frame (e.g., the movable frame 140) may be pivotally coupled to a second frame (e.g., a first fixed frame 160). The MEM array 100 may have a mirror cavity 114 and a support 120. The MEM array 100 may include a support anchor 116 (e.g., such as Figure 2B Support anchor 212b) shown.

[0135] Figure 1B A plan view of the lower surface of the micromirror electrostatic actuator 101 is shown. The side members (e.g., 136, 137, 138, 139) can have a length and a width in a plan view, which are oriented in a first direction or a second direction, wherein the side members (e.g., 136, 137, 138, 139) can be oriented, for example, perpendicularly or parallel to another MEM component, such as another side member (e.g., 136, 137, 138, 139). The side members (e.g., 136, 137, 138, 139) can also be arranged in pairs.

[0136] A first pair of high aspect ratio members 130, 132 can be coupled to a center platform 134. A first pair of side members 136, 137 (e.g., high aspect ratio side members) can be coupled to a movable frame 140 on opposite ends of the first high aspect ratio member 130. The first pair of high aspect ratio side members 136, 137 are oriented in the same direction as the first high aspect ratio member 130. A second pair of side members 138, 139 (e.g., high aspect ratio side members) can be coupled to the movable frame 140 on opposite ends of the second high aspect ratio member 132. The second pair of side members 138, 139 (e.g., high aspect ratio side members) can also be oriented in the same direction as the second high aspect ratio member 132.

[0137] The second pair of high aspect ratio members 142, 143 may be coupled on opposite ends of the movable frame 140. The second pair of high aspect ratio members 142, 143 may be oriented perpendicular to the first high aspect ratio member 130. The second pair of high aspect ratio members 142, 143 may have a first pair of flanking members 144, 145 and a second pair of flanking members 146, 147 coupled to fixed frames 160, 161, 162, 163 (e.g., first fixed frame 160, second fixed frame 161, third fixed frame 162, and fourth fixed frame 163), respectively. The first pair of high aspect ratio flanking members 144, 145 and the second pair of high aspect ratio flanking members 146, 147 of the first high aspect ratio member may be oriented perpendicular to the first pair of high aspect ratio flanking members and the second pair of high aspect ratio flanking members of the second high aspect ratio member. Additional high aspect ratio members (e.g., high aspect ratio member 148) can be coupled to the lower surface of central platform 134 to reduce etch depth variation across the device (e.g., due to etch loading, etc.). High aspect ratio members (e.g., high aspect ratio member 148) can provide mechanical reinforcement and reduce top surface deformation.

[0138] At the end of the platform or frame, the micromirror electrostatic actuator 101 may use a movable member, such as Figure 1B The micromirror electrostatic actuator 101 can use two side members per platform and two side members per frame. The central platform 134 can be pivotally coupled to the movable frame 140 so that the first high aspect ratio member 130 can be operable to move relative to the first side members 136, 137. When a potential difference is applied between the first high aspect ratio member 130 and one of the first side members 136, 137, an attraction can be generated between these members, causing the central platform 134 to pivot. For example, the first high aspect ratio member 130 can be maintained at ground potential while applying an effective voltage to any one of the first side members 136, 137. For example, applying an effective voltage to the first side member 136 can attract the first high aspect ratio member 130 and can cause the central platform 134 to rotate in a corresponding direction. Similarly, application of an effective voltage to the first flanking member 137 may attract the first high aspect ratio member 130 and may cause the central platform 134 to rotate in a direction opposite to the direction created by the attraction to the first flanking member 136 .

[0139] Likewise, the second high aspect ratio member 132 can be movable relative to the second flanking members 138, 139. To provide the desired movement of the center platform 134 and resist undesired rotation, an actuation voltage can be simultaneously applied relative to the first high aspect ratio member 130 and the second high aspect ratio member 132. When a potential difference is applied between the second high aspect ratio member 132 and one of the second flanking members 138, 139, an attraction can be generated between these members (i.e., between the second high aspect ratio member 132 and one of the second flanking members 138, 139), thereby causing the center platform 134 to rotate in a manner similar to that discussed above with respect to the first high aspect ratio member 130. The coordinated use of actuation structures on the ends of the center platform 134, such as the first flanking members 136, 137 or the second flanking members 138, 139, can minimize undesired twisting of the center platform 134 to provide a more uniform rotation.

[0140] An actuation structure (e.g., first lateral members 144, 145 or second lateral members 146, 147) may be used for rotation of the movable frame 140. For example, the high aspect ratio member 142 may be coupled to the movable frame 140, and the first pair of lateral members 144, 145 may be connected to the fixed frames 160, 161 at opposite ends of the high aspect ratio member 142, respectively.

[0141] The movable frame 140 is pivotally coupled to the fixed frame 160 such that the high aspect ratio member 142 is operable to move relative to the first pair of flanking members 144, 145. When a potential difference is applied between the high aspect ratio member 142 and one of the first pair of flanking members 144, 145, an attraction may be generated between these members (e.g., between the high aspect ratio member 142 and one of the first pair of flanking members 144, 145), which may cause the movable frame 140 to pivot in a manner similar to that discussed above with respect to the central platform 134.

[0142] The high aspect ratio member 143 can be movable relative to the second pair of flanking members 146, 147. When a potential difference is applied between the high aspect ratio member 143 and one of the second pair of flanking members 146, 147, an attraction can be generated between these members (e.g., between the high aspect ratio member 143 and one of the second pair of flanking members 146, 147), which can facilitate rotation of the movable frame 140. The coordinated use of actuation structures on the ends of the movable frame 140 can minimize undesirable twisting of the frame to provide more uniform rotation.

[0143] Alternatively or additionally, the central platform 134 or the frame (e.g., the movable frame 140 or the fixed frames 160, 161, 162, 163) can have an actuation structure on one end, such as the first side members 136, 137 or the second side members 138, 139. Alternatively or additionally, the micromirror electrostatic actuator 101 can have other actuation structures that can be configured to minimize undesirable distortion without departing from the scope of the present disclosure.

[0144] MEM array 100 (eg Figure 1A ) may include a plurality of platforms (eg, micromirror electrostatic actuator 101 (eg Figure 1B )). The micromirror electrostatic actuator 101 in the array may include a central platform 134, a movable frame 140, and a fixed frame 160. The fixed frame 160 may form a cavity in which the central platform 134 and the movable frame 140 may be disposed. A reflective surface (e.g., a metal layer that may operate as a mirror and may have a first resonant frequency) may be coupled to the central platform 134 and suspended from the movable frame 140 by a first central platform flexure 154 and a second central platform flexure 155. The reflective surface may be used to redirect a light beam along an optical path that may be a different optical path from that of the received light beam. An actuator including a mirror located on the central platform 134 may be referred to herein as a mirror unit, a MEM actuator having a mirror, or a micromirror electrostatic actuator 101.

[0145] The rotation of the central platform 134 can be independent of the rotation of the movable frame 140, so that the micromirror electrostatic actuator 101 can allow separate movement. For example, the central platform 134 can rotate relative to the fixed frames 160, 161, 162, 163, while the movable frame 140 can remain parallel and fixed on the MEM structure relative to the fixed frames 160, 161, 162, 163. Alternatively or additionally, the movable frame 140 can rotate relative to the fixed frames 160, 161, 162, 163, while the central platform 134 can remain parallel (and fixed) relative to the movable frame 140 on the MEM structure. The movable frame 140 can be coupled to the fixed frames 160, 161, 162, 163 via the first fixed frame flexure 152 and the second fixed frame flexure 153. Alternatively or additionally, the central platform 134 and the movable frame 140 can, for example, rotate simultaneously and independently of each other. Thus, for example, the central platform 134, the movable frame 140, and the fixed frame 160 may be simultaneously non-parallel and separated relative to each other during actuation.

[0146] The first center platform flexure 154 and the second center platform flexure 155 can be coupled to the movable frame 140 via the first end rod 158 and the second end rod 159. The first end rod and the second end rod can be attached to the movable frame 140 using one or more sets of support beams 170a, 170b, 170c, 170d. The one or more sets of support beams 170a, 170b, 170c, 170d can be composed in whole or in part of silicon dioxide, which is configured to facilitate a selected amount of tension. The one or more sets of support beams 170a, 170b, 170c, 170d can facilitate applying a selected amount of tension to the structure by expanding by different amounts when compared to materials used in, for example, the movable frame 140, the center platform 134, the first end rod 158, the second end rod 159, or the fixed frames 160, 161, 162, 163. Materials of different expansion properties may be used in the movable frame 140 to help the first and second center platform flexures 154 and 155 have the proper amount of tension.

[0147] In particular, the expansion provided by the connecting beam acting on the movable frame 140 and the first and second end bars can provide: (i) tension between a pair of center platform flexures 154, 155, and (ii) tension between a pair of fixed frame flexures 152, 153. One or more sets of support beams 170a, 170b, 170c, 170d can be configured to apply tension to minimize positional deformation caused by bending of the flexures (e.g., center platform flexures 154, 155 or fixed frame flexures 152, 153) under compressive forces. In general, when the flexures (e.g., center platform flexures 154, 155 or fixed frame flexures 152, 153) are under a compressive force exceeding a threshold, the flexures (e.g., center platform flexures 154, 155 or fixed frame flexures 152, 153) may bend.

[0148] Thus, one or more sets of support beams 170a, 170b, 170c, 170d can be coupled between the movable frame 140 and the first and second end bars at a substantially non-perpendicular angle to tighten the center platform flexures 154, 155, thereby facilitating tensioning. Because the fixed frame flexures 152, 153 can be perpendicular to the center platform flexures 154, 155, the substantially non-perpendicular attachment angle of the support beams can cause a tensile force to be generated on the movable frame 140, which can tighten the fixed frame flexures 152, 153 and contribute to the tension thereof. One or more sets of support beams 170a, 170b, 170c, 170d can be coupled between: (i) the movable frame 140 and (ii) the first and second end bars 158, 159, at an angle of approximately 45 degrees (e.g., within a range from 35 degrees to 55 degrees). Alternatively or additionally, one or more sets of support beams 170a, 170b, 170c, 170d may be coupled between (i) the movable frame 140 and (ii) the first end rod 158 and / or the second end rod 159 at an angle less than or greater than 45 degrees.

[0149] The center platform flexures 154, 155 can allow the center platform 134 to pivot. The center platform flexures 154, 155 can help torsional resistance along the direction of the center platform flexures 154, 155, but may provide greater resistance in other directions. In other words, there can be considerable resistance to undesired movement of the center platform in a selected direction (e.g., from side to side, or about an axis perpendicular to the surface of the center platform).

[0150] The center platform flexures 154, 155 can extend into corresponding slots formed in the center platform 134 to provide sufficient length for the center platform flexures 154, 155 for appropriate flexibility and / or torsional resistance. The center platform flexures 154, 155 can have: a length from about 10 microns to about 200 microns (e.g., about 100 microns); a height from about 1 micron to about 20 microns (e.g., about 7 microns); and a width from about 0.1 microns to about 2.0 microns (e.g., about 1 micron). The center platform flexures 154, 155 can have an aspect ratio from about 5:1 to about 20:1 (e.g., an aspect ratio of about 10:1). Such an aspect ratio can provide greater compliance in a desired direction of motion and provide stiffness in an undesired direction. Alternatively or additionally, other lengths, heights, widths, and aspect ratios can be used.

[0151] Similarly, the fixed frame flexures 152, 153 can allow the movable frame 140 to pivot while providing resistance to undesired movement of the movable frame 140 in other directions (e.g., from side to side, or about an axis perpendicular to the surface of the movable frame). The fixed frame flexures 152, 153 can extend into a pair of corresponding slots formed in the movable frame 140 and the fixed frames 160, 161, 162, 163 to provide sufficient length for the fixed frame flexures 152, 153 to facilitate appropriate flexibility and torsional resistance. The fixed frame flexures 152, 153 can have a length, height, width, and aspect ratio similar to that disclosed for the center platform flexures 154, 155. Alternatively or additionally, other lengths, heights, widths, and aspect ratios can be used.

[0152] One or more of the central platform flexures 154, 155 or the fixed frame flexures 152, 153 may include a pair of torsion beams. The pair of torsion beams may not be parallel to each other. Using multiple torsion beams (e.g., a pair or more) may help increase resistance to undesired movement of a frame (e.g., movable frame 140) or a platform (e.g., central platform 134) when compared to a single beam flexure.

[0153] The pair of torsion beams can have various configurations. The torsion beams can be non-parallel beams with their ends near the movable frame 140, which can be substantially parallel and separated by a gap. The gap between the torsion beams can be configured to decrease along the length of the torsion beams so that the ends of the torsion beams near the fixed frames 160, 161, 162, 163 can be closer together than the ends of the beams near the movable frame 140. The angles of the torsion beams relative to each other can resist unstable torsion modes.

[0154] Alternatively or additionally, the torsion beams may be configured such that the ends of the torsion beams proximate the fixed frames 160, 161, 162, 163 may be further apart than the ends of the torsion beams proximate the movable frame 140. Alternatively, the torsion beams may be substantially parallel to each other such that the gap between the torsion beams may be substantially uniform along the length of the torsion beams.

[0155] Figure 2AA partial cross section of a MEM array 100 taken along line 1-1 in FIG. 1 is shown, which has a top side 10 and a bottom side 20, wherein the layers within the MEM array 100 may have a layer top surface oriented toward the top side 10 and a layer bottom surface oriented toward the bottom side 20, and the MEM array 100 may include: a silicon wafer 210, which may be a substrate wafer for the MEM array 100; and a cover wafer, which may be a protective layer. In some configurations, a pair of bonding elements 211a, 211b may be a sintered glass seal surrounding the micromirror array to bond the device wafer 220 to the substrate wafer 210.

[0156] Figure 2B A partial cross-section of the MEM array 100 taken along line 1-1 in FIG. 1 is shown, wherein a silicon wafer 210 may be bonded to a device wafer 220 using one or more of eutectic bonding, thermocompression bonding, fusion bonding, or anodic bonding, for example, at 212a and 212c. Support anchors 212b (or support posts) and bonding surfaces 212a and 212c may be formed by etching posts and / or pillars having a height of about 10 μm to about 100 μm into the silicon wafer 210. During the bonding process, the support anchor 212b may contact the support webbing 234. In some configurations, the support anchor 212b may be bonded to the support webbing 234. In other configurations, the support anchor 212b may be close to, but not in contact with, the support webbing 234. The support webbing 234 may be located below the support member 120 (e.g., Figure 1A 116 in FIG. 116).

[0157] Structural release can be achieved at the upper surface (e.g., top side 10) of device wafer 220 using dry etching, which can penetrate multiple trenches 226 to suspend the movable structure (e.g., mirror) of center platform 236 and frame 230. Isolation tabs 228 can be formed by etching the front until the etching approaches or just reaches mirror cavity 232.

[0158] Alternatively or additionally, the release etch can help with electrical isolation by, for example, separating the silicon of the frame 230 from the silicon of the surrounding members 238a, 238b. The vias 224 can connect regions of the silicon to the metal interconnects 240. To seal the central platform 236 (e.g., mirror) from the external environment, a cover wafer 250 can be bonded to the device wafer 220, for example, through a second pair of bonding elements 222a, 222b, which can be sintered glass seals. The cover wafer 250 can be glass to allow incident light to: transmit with low loss in the cavity 242 above the mirror, reflect from the upper surface of the central platform 236 (e.g., mirror), and transmit out of the mirror cavity.

[0159] II. Modal Analysis of Micromirror Electrostatic Actuator

[0160] like 3A to 3HAs shown, the actuator array (e.g., Figure 1A The micro-mirror electrostatic actuators 300a, 300b, 300c, 300d, 300e, 300f, 300g, 300h in the MEM array 100 shown in the figure can receive simulated vibration frequencies. In order to understand the ideal device performance, modal analysis is completed for individual micro-mirror electrostatic actuators 300a, 300b, 300c, 300d, 300e, 300f, 300g, 300h to simulate different mechanical motions (e.g., frame rotation, frame translation, mirror rotation, or mirror translation). These simulations are used to calculate modal solutions, which provide various results (e.g., vibration frequencies and relative displacements).

[0161] exist A silicon model of a micromirror electrostatic actuator 300a, 300b, 300c, 300d, 300e, 300f, 300g, 300h is simulated in which the micromirror electrostatic actuator 300a, 300b, 300c, 300d, 300e, 300f, 300g, 300h has a spring height of 7μm, a structure height of 30μm, and a total height of 310μm. The structure below the spring height is 23μm, and the blade below the structure has a height of 280μm. A modal analysis is performed, and the modal shapes and frequencies are described in Table I.

[0162] Table I: Modal results

[0163]

[0164] III. Structural changes to reduce the effects of forces

[0165] For non-existent anchors ( Figure 2A )or Figure 2B The support anchor 212b in the simulation is not coupled to the support webbing 234, and the MEM array (e.g., Figure 1A MEM array 100) in the central platform (e.g., Figure 1B The total force of 20 μN is applied to the center platform 134 in FIG. 134. As shown in Table II, the y-direction tilt and / or x-direction tilt of the mirror receiving the applied force (shown in bold in row 3, column 2) and the surrounding mirrors in degrees are provided. When the mold is not present in the simulation, the cell is grayed out. Table II corresponds to when the support anchor 212b is not present ( Figure 2A )or Figure 2B 21. The situation in which the support anchor 212b is not coupled to the support webbing 234 (eg, the anchor is not coupled).

[0166] Table II: MEM array configurations - anchors not bound

[0167] Column 1 Column 2 Column 3 Column 4 Column 5 Row 1 <![CDATA[2.5×10 -6 °(x)]]> Row 2 Row 3 <![CDATA[9×10 -6 °(and)]]> 36.5°(y) <![CDATA[5×10 -6 °(and)]]> <![CDATA[1×10 -6 °(and)]]> Row 4 Line 5 <![CDATA[2.5×10 -6 °(x)]]>

[0168] In the simulation, the central platform (e.g. Figure 1B The tilt of the center platform 134 in FIG. 1 is calculated to be 36.5°. When the MEM array (e.g., Figure 1A When applying the small angle approximation to the MEM array 100 in FIG. 1 , the angle is calculated as 34° in the simulation. -6 ° inclination) in the center platform (e.g. Figure 1B The deflection of the center platform 134 in the image can be calculated using the following formula: Deflection (in ppm) = Tilt (in degrees) / Applied mirror tilt (in degrees), which provides a deflection of 0.26 ppm. Therefore, when the anchor is not bound, the center platform in row 3, column 1 (e.g., Figure 1B The deflection of the center platform 134 in the micromirror provides a baseline from which to compare other results obtained after structural modifications of the micromirror electrostatic actuator 101.

[0169] MEM arrays (e.g., Figure 1A The MEM array 100 in the embodiment may include: a first platform (eg, Figure 1B The center platform 134 in the embodiment includes a first platform reflective surface (e.g., a mirror), and a second platform (e.g., an adjacent center platform) includes a second platform reflective surface (e.g., a mirror). Figure 1A The MEM array 100 in FIG. 1 may include a first platform (eg, Figure 1B The central platform 134 in the middle and the substrate wafer (eg, a substrate wafer below a second platform (eg, an adjacent central platform) Figure 2A and Figure 2B 210 in the silicon wafer). A substrate wafer (e.g., Figure 2B The silicon wafer 210 in the embodiment may include support anchors (e.g., when bonded to Figure 2B 234 when the support anchor 212b), when the first platform (eg, Figure 1B When a center platform 134 in the middle receives an applied force, the support anchors can be used to reduce mechanical movement (e.g., harmonics) of a second platform (e.g., an adjacent center platform).

[0170] For the simulation using anchors, 212b is bound to Figure 2B 234 in, at a frequency of 400 Hz to the MEM array (eg Figure 1A The central platform (eg, Figure 1B The total force of 20 μN is applied to the center platform 134 in the anchor. The mirror has the same deflection with the applied force when the anchor is bound and unbound. As shown in Table III, the center platform (e.g. Figure 1B y-direction tilt and / or x-direction tilt of the central platform 134 in (shown in bold in row 3, column 2) and the surrounding central platforms (e.g., surrounding mirrors) expressed in degrees.

[0171] Table III: MEM array configuration - anchor binding

[0172] Column 1 Column 2 Column 3 Column 4 Column 5 Row 1 <![CDATA[2×10 -8 °(x)]]> Row 2 <![CDATA[1.8×10 -6 °(x)]]> Row 3 <![CDATA[5×10 -7 °(and)]]> 36.5°(y) <![CDATA[3×10 -7 °(and)]]> <![CDATA[3×10 -8 °(and)]]> Row 4 Line 5 <![CDATA[2×10 -8 °(x)]]>

[0173] The central platform (e.g., Figure 1B The tilt of the center platform 134 in FIG. 1 is calculated to be 36.5°. When the MEM array (e.g., Figure 1A When applying the small angle approximation to the MEM array 100 in Table III, the angle is calculated to be 34°. The platform (e.g., mirror) in row 3, column 1 of Table III is calculated to be 5×10 -7 °, which is equal to a deflection of 0.014 ppm. Compared to the crosstalk between the center platform (e.g., mirror) applying a force to the center platform in row 3, column 1 without anchor binding (i.e., 0.26 ppm), the crosstalk is 5.38% with anchor binding (i.e., 0.014 ppm). That is, when the anchor is bound, the center platform (e.g., mirror) receiving the applied force is Figure 1B The percentage of deflection imparted to the center platform 134 (eg, mirror) in row 3, column 1 is approximately 5.38 of the amount when the anchor is unbound.

[0174] Even when additional anchors are used, adding anchors to a MEM array (e.g. Figure 1A A central platform (e.g., Figure 1B The force applied by the central platform 134 in the micromirror may also cause the surrounding micromirror electrostatic actuators (e.g., Figure 1B Undesired movement of other central platforms (e.g., mirrors) of the micromirror electrostatic actuator 101 in the micromirror. FIG. 4A to FIG. 4C The simulated application of forces to a mirror element and the effect of that force on neighboring mirror elements when additional anchors are included is shown.

[0175] Figure 4AThe lower surface of the micromirror electrostatic actuator 101 is shown. For simulation, a force of 20 μN (total) is applied to the second pair of high aspect ratio members 142, 143 at 400 Hz in the direction of the positive x-axis, and equal but opposite forces are applied to the following components in the positive x-direction as indicated by the arrows: (i) the side member 145 on the fixed frame 161 and (ii) the side member 147 on the fixed frame 163. This applied force causes the vibration rotation of the movable frame 140 around the Y-axis. The micromirror electrostatic actuator 101 also includes: the side member 144 on the fixed frame 160, the side member 146 on the fixed frame 162, and the mirror cavity wall (not shown).

[0176] Figure 4B It shows how the micromirror electrostatic actuator 101 receiving the applied force affects other mirror units in the MEM array. The affected mirror units include adjacent diagonal mirror units (402, 404, 406, 408, 410, 412) and the mirror unit (414) and the mirror unit (416) directly above the micromirror electrostatic actuator 101 receiving the applied force. The different tilts of some other mirrors are recorded in Table III.

[0177] For the non-anchored embodiment, the entire mirror array is affected as can be seen in comparing the results of Table II and Table III.

[0178] Figure 4C A closer examination of the anchoring behavior is provided and reveals that applying a force to the micromirror electrostatic actuator 101 has the greatest effect on its diagonally adjacent (upward or downward) micromirror electrostatic actuators (i.e., 402, 404, 408 ( Figure 4C Not shown), 410( Figure 4C The tilt at the diagonal mirror unit 404 is 1.8×10 -6 Due to the torque applied to the fixed frame (eg, the fixed frame 161 ), the tilt is transferred from the micromirror electrostatic actuator 101 receiving the applied force to the diagonal mirror unit 404 .

[0179] like Figure 5A As shown, the micromirror electrostatic actuator 101 may include a fixed frame 160, 161, 162, 163 that may be substantially free of holes. For the purposes of this disclosure, "substantially" may mean within one or more of 1%, 2%, 3%, 5%, or 10% of a value. The fixed frame 160, 161, 162, 163 may be substantially free of holes when less than one or more of 10%, 5%, 3%, 2%, or 1% of the surface area of ​​the fixed frame includes holes.

[0180] FIG. 5A to FIG. 5CA portion of the micromirror electrostatic actuator 101 and surrounding structures (eg, the mirror cavity wall 234 ) are shown. Figure 5A A portion of the mirror is shown where apertures 510 or holes are located in the fixing frames 160 , 161 , 162 and 163 . Figure 5B Portions of the micromirror electrostatic actuator 101 and surrounding structures (eg, the mirror chamber wall 234 ) are shown with the aperture 510 removed from the fixed frames 160 , 161 , 162 , 163 .

[0181] Figure 5C Shows that when Figure 5A The orifice 510 is shown as Figure 5B The effect of applying a total force of 20 μN to a portion of the micromirror electrostatic actuator 101 at a frequency of 400 Hz when the micromirror electrostatic actuator 101 is removed. FIG. 5D to FIG. 5E , FIG. 6A to FIG. 6B and FIG. 7A to FIG. 7B As shown, removal of aperture 510 allows for reduced crosstalk.

[0182] like Figure 5D As shown, a portion of the micromirror electrostatic actuator 500d may include a movable frame 140, a fixed frame 161, a high aspect ratio member 142, a side member 145, and a fixed frame anchor 512d. The fixed frame 161 may be coupled to the fixed frame anchor 512d, which may be used to reduce mechanical movement of the surrounding mirror unit. The fixed frame anchor 512d may be located near the side member 145. Figure 5E As shown, in a portion of the micromirror electrostatic actuator 500e, the fixed frame anchor 512e having a larger surface area can be positioned closer to the side member 145 than the fixed frame anchor 512d is positioned relative to the side member 145. Figure 5D The fixed frame anchor 512e may be modified to have a selected surface area that may be oriented toward a surface area of ​​the flanking member 145. The selected surface area of ​​the fixed frame anchor 512e may be an amount that helps reduce mechanical movement of the surrounding mirror unit. As the selected surface area of ​​the fixed frame anchor 512e increases, mechanical movement of the surrounding mirror unit may be reduced.

[0183] like Fig. 6A As shown, the micromirror electrostatic actuator 101 may include a first frame (e.g., a movable frame 140) that may be pivotally coupled to a second frame (e.g., fixed frames 160, 161, 162, 163). The second frame (e.g., fixed frames 160, 161, 162, 163) may include a second frame high AR member (e.g., high aspect ratio member 610, 611, 612, 613) to facilitate increased stiffness and support, thereby reducing the amount of friction that may occur on a central platform (e.g., as shown in FIG. 1 ). Figure 1BThe second frame high AR components (e.g., high aspect ratio components 610, 611, 612, 613) can be used to reduce the mechanical motion (e.g., harmonics) transmitted between the central platform 134 shown in the figure and the surrounding mirror units. The second frame high AR components (e.g., high aspect ratio components 610, 611, 612, 613) can be used to reduce the mechanical motion of the surrounding mirror units. The second frame high AR components (e.g., high aspect ratio components 610, 611, 612, 613) can be configured to contact the mirror cavity wall 234 to help reduce the transmission of mechanical motion to the surrounding mirror units.

[0184] The additional stiffness and support provided by the high aspect ratio members 610, 611, 612, 613 from the micromirror electrostatic actuator 101 to the MEMs array (e.g. Figure 1A The motion transfer of adjacent mirror elements (e.g., diagonal mirrors) in the MEM array 100 in FIG. 1 is from 1.8×10 -6 The inclination is reduced to the value where the orifice is removed (e.g. Figure 5A The orifice 510 shown) and adding a high AR component to the scene of 1.0×10 -6 Degree, such as Figure 6B . Table IV provides the tilt for different scenarios: (i) anchored without 1 or 2 higher AR members and without additional anchors, (ii) adding 1 high AR member, (iii) adding 2 high AR members, (iv) additional anchors, and (v) larger additional anchors. The scenarios in Table IV include support anchors located between the platforms (e.g., 212b coupled to 234 in FIG. 2). The fourth row (“Additional Anchors”) also includes the following scenarios: Figure 5D The fifth row ("larger additional anchors") also includes Figure 5E Anchor shown.

[0185] Table IV: Tilt for different scenarios

[0186]

[0187] like Fig. 7A As shown, the micromirror electrostatic actuator 101 may include a first frame (eg, Figure 1B The movable frame 140 in the embodiment of the present invention can be pivotally coupled to a second frame (e.g., a fixed frame from the fixed frames 160, 161, 162, 163). The second frame can include at least two second high aspect ratio members 710, 710' (e.g., frame high AR members) that can be operated to facilitate increased stiffness and support to reduce the possibility of center platform (e.g., such as Figure 1BThe second high aspect ratio members 710, 710' can be configured to contact the mirror cavity wall 234 to help reduce the transmission of mechanical motion to the surrounding mirror units. The gap between the two second high aspect ratio members 710, 710' can be configured to avoid one or more of the following: (i) contact with other members, or (ii) affect etching.

[0188] The two second high aspect ratio members 710, 710' may be substantially parallel to each other. The two second high aspect ratio members 710, 710' may be substantially parallel to each other. The two members may be substantially parallel to each other when the angle between the two members differs from the 0 degree angle between the two members by less than one or more of 10 degrees, 5 degrees, 3 degrees, 2 degrees, or 1 degree.

[0189] The micromirror electrostatic actuator 101 may include one or more of the following: a third frame (e.g., the second fixed frame among the fixed frames 160, 161, 162, and 163), which may include a third frame high AR component (e.g., 711, 711') that may be in contact with the mirror cavity wall 234; a fourth frame (e.g., the third fixed frame among the fixed frames 160, 161, 162, and 163), which may include a third frame high AR component (e.g., 712, 712') that may be in contact with the mirror cavity wall 234; or a fifth frame (e.g., the fourth fixed frame among the fixed frames 160, 161, 162, and 163), which may include a fourth frame high AR component (e.g., 713, 713') that may be in contact with the mirror cavity wall 234.

[0190] exist Fig. 7A , the micromirror electrostatic actuator 101 is shown with the hole removed (e.g., as Figure 5A10 ) and add a plurality of high aspect ratio members 710, 710', 711, 711', 712, 712', 713, 713' to support the fixed frames 160, 161, 162 and 163. The first pair of high aspect ratio members 710, 710' overlaps with the side members 144 on the fixed frame 160. That is, the x-axis coordinate of the high aspect ratio member 710 overlaps with the x-axis coordinate of the high aspect ratio member 710', and the x-axis coordinates of the high aspect ratio member 710 and the high aspect ratio member 710' overlap with the x-axis coordinates of one or more of the first pair of side members 144. The second pair of high aspect ratio members 711, 711' overlaps with the side members 145 on the fixed frame 161. That is, the x-axis coordinate of the high aspect ratio member 711 overlaps with the x-axis coordinate of the high aspect ratio member 711', and the x-axis coordinates of the second pair of high aspect ratio members 711, 711' overlap with the x-axis coordinates of one or more side members (e.g., side members 145). The third pair of high aspect ratio members 712, 712' overlaps with the side members 146 on the fixed frame 162. That is, the x-axis coordinate of the high aspect ratio member 712 overlaps with the x-axis coordinate of the high aspect ratio member 712', and the x-axis coordinates of the high aspect ratio member 712 and the high aspect ratio member 712' overlap with the x-axis coordinates of one or more side members (e.g., side members 146). The third pair of high aspect ratio members 713, 713' overlaps with the side members 147 on the fixed frame 163. That is, the x-axis coordinate of high aspect ratio member 713 overlaps with the x-axis coordinate of high aspect ratio member 713', and the x-axis coordinates of high aspect ratio members 713, 713' overlap with the x-axis coordinates of one or more flanking members (e.g., flanking member 147). One or more of high aspect ratio members 710, 710', 711', 712', 713' can contact mirror cavity wall 234.

[0191] Through the additional stiffness and support provided by the multiple high aspect ratio members 710, 710', 711, 711', 712, 712', 713, 713', the motion transfer from the micromirror electrostatic actuator 101 to the adjacent mirror element (e.g., diagonal mirror) in the array is reduced from 1.0×10 -6 The tilt of the angle is reduced to 5.7×10 for the scenario where two high AR members are added to support the fixed frames 160, 161, 162, 163. -7 Degree, such as Fig. 7A As shown in the micromirror electrostatic actuator 101.

[0192] like Figure 7B As shown, the micromirror electrostatic actuator 101 may include a first frame (eg, Figure 1BThe first frame may be a movable frame 140 in the embodiment of the present invention, which may be pivotally coupled to a second frame (e.g., a fixed frame 160, 161, 162, 163). The second frame (e.g., a fixed frame 160, 161, 162, 163) may include one or more flanking members (e.g., 144). A second high aspect ratio member of the high aspect ratio members 714, 715, 716, 717 may be positioned on the same fixed frame (e.g., fixed frame 160, 161, 162, 163) relative to one or more of the first pair of flanking members 144, 145 or the second pair of flanking members 146, 147 to avoid one or more of the following situations: (i) contact with other members, or (ii) affecting etching.

[0193] A second one of the high aspect ratio members 714, 715, 716, 717 can be substantially perpendicular to one or more of the first pair of flanking members 144, 145 or the second pair of flanking members 146, 147 on the same fixed frame (e.g., fixed frame 160, 161, 162, 163). Two members can be substantially perpendicular to each other when the angle between the two members differs from the vertical direction (i.e., 90 degrees) by less than one or more of 10 degrees, 5 degrees, 3 degrees, 2 degrees, or 1 degree.

[0194] Figure 7B Another configuration of the micromirror electrostatic actuator 101 is shown, in which the hole (e.g., Figure 5A 160, 161, 162, and 163, respectively. The high aspect ratio member 714 can be aligned perpendicular to one or more side members 144 on the fixed frame 160. The high aspect ratio member 715 can be aligned perpendicular to one or more side members 145 on the fixed frame 161. The high aspect ratio member 716 can be aligned perpendicular to one or more side members, such as the side member 146 on the fixed frame 162. The high aspect ratio member 717 can be aligned perpendicular to one or more second frame side members, such as the side member 147 on the fixed frame 163. One or more of the high aspect ratio members 714, 715, 716, 717 can contact the mirror chamber wall 234.

[0195] Therefore, placing anchors and / or high aspect ratio members in mirror elements can be used to reduce the harmonic amplitude of vibrations of adjacent mirror elements, thereby contributing to improved performance of the MEMs array, compared to a baseline scenario that does not use placement of anchors and / or high aspect ratio members.

[0196] Figure 8A process flow of an exemplary method 800 that can be used to reduce coupling between adjacent platforms in a MEMs array according to at least one embodiment described in the present disclosure is shown. The method 800 can be arranged according to at least one embodiment described in the present disclosure.

[0197] Method 800 may begin at block 805, where the method may include coupling a movable frame to: a fixed frame and a platform including a reflective surface.

[0198] At block 810, the method may include reducing the transfer of mechanical motion from the platform to an adjacent platform by one or more of: coupling one or more fixed frame high aspect ratio (AR) members to the fixed frame, or coupling one or more fixed frame support anchors to the fixed frame. The one or more fixed frame high aspect ratio members may be positioned to contact the mirror cavity wall. The one or more fixed frame support anchors have a selected surface area that may be oriented toward a selected surface area of ​​one or more side members of the fixed frame. The fixed frame may include one or more side members that may be substantially perpendicular to the one or more fixed frame high AR members. The fixed frame may be substantially free of apertures.

[0199] Without departing from the scope of the present disclosure, modifications, additions, or omissions may be made to the method 800. For example, in some embodiments, the method 800 may include any number of other components that may not be explicitly shown or described.

[0200] IV. Manufacturing Method

[0201] For the fabrication of MEM arrays (e.g. Figure 1A The method of the MEM array 100 in the embodiment of the present invention may include forming a dielectric material layer on a first side of a substrate; forming a vertical isolation trench containing the dielectric material on the first side of the substrate; patterning a mask layer on a second side of the substrate opposite to the first side of the substrate; forming a through hole on the first side of the substrate; metallizing the first side of the substrate; depositing a second metal layer on the first side of the substrate to form a reflective surface; forming a second trench on the first side of the substrate to define a structure; deeply etching the second side of the substrate to form a narrow blade; and after forming the narrow blade, placing a base wafer (e.g., FIG. 2A to FIG. 2B and etching through a second trench on the first side of the substrate to release the structure and provide electrical insulation.

[0202] The MEM array 100 may include a first platform 112a (e.g., a center platform) that may include a first platform reflective surface (e.g., a metal layer that may be operable as a mirror and may have a first resonant frequency). The MEM array 100 may include a second platform 112b (e.g., a center platform of a different mirror unit) that may include a second platform reflective surface (e.g., a metal layer that may be operable as a mirror and may have a second resonant frequency). The MEM array 100 may include a substrate wafer (e.g., a silicon wafer) located below the first platform 112a and the second platform 112b. The first platform 112a may be pivotally connected to a first frame (e.g., a movable frame 140). The first frame (e.g., the movable frame 140) may be pivotally coupled to a second frame (e.g., a fixed frame 160). The second frame (e.g., the fixed frame 160) may include one or more of the following: a second frame high aspect ratio (AR) member (e.g., such as Fig. 6A high aspect ratio members 610, 611, 612, 613) as shown or a second frame support anchor (e.g., as Figure 5D The fixed frame anchor 512d shown or as Figure 5E Fixed frame anchor 512e) as shown.

[0203] The substrate may include a silicon wafer. Alternatively or additionally, the dielectric material may be silicon dioxide. Alternatively or additionally, the method may include one or more of forming a passivation dielectric layer on the first side of the substrate after metallizing the first side of the substrate and attaching a cap wafer to the first side of the substrate. The cap wafer may be composed of glass.

[0204] refer to FIG. 9A to FIG. 9K The process flow of the manufacturing method is described.

[0205] Fig. 9A A cross section of a silicon wafer 910 (e.g., silicon on an interface wafer) is shown, which can be selected to be in the range of 300-600 micrometers (μm) in thickness. The silicon wafer 910 can have a top side 10 (or device side or simply top) and a back side or bottom side 20. The layers within the MEM array 100 formed by the silicon wafer 910 can have a top surface oriented toward the top side 10 and a bottom surface oriented toward the bottom side 20. Mark the upper left portion 902. The buried oxide layer 912 can be 0.5-1 μm thick and is located 10-50 μm below the top side 10.

[0206] FIG. 9B to FIG. 9E A MEM array (e.g., Figure 1A100) in the MEM array 100 shown in FIG. 1 , which shows the manufacturing technology of the isolation trench 920 on the top side 10 of the silicon wafer 910. The isolation trench 920 can be vertically positioned on the silicon wafer substrate and filled with a dielectric material (e.g., silicon dioxide). After filling, the isolation trench 920 can provide electrical insulation between the blades after the release mirror. The mask layer 914 can remain on the surface of the silicon wafer 910 and can be planarized after the isolation trench filling process to facilitate subsequent photolithography patterning and eliminate surface discontinuities.

[0207] refer to Fig. 9B , the silicon wafer 910 may be provided with a mask layer 914. The mask layer 914 may be silicon dioxide (e.g., an oxide layer). The silicon wafer 910 may have any doping, resistivity, and crystal orientation, since the process depends on reactive ion etching to carve and form structures. The mask layer 914 may protect the upper surface of the silicon wafer 910 during the isolation trench etching process, and thus present a mask layer. This mask layer may be formed by any of a variety of techniques, including thermal oxidation of silicon or chemical vapor deposition (CVD). The thickness of the mask layer 914 may be 0.5-1.0 μm. A photoresist layer 916 may be spin-coated onto the silicon wafer 910, and exposed and developed using photolithography techniques to define an isolation trench pattern for the isolation trench 920. Reactive ion etching may be used to transfer the photoresist pattern to the mask layer 914, thereby exposing the top surface of the silicon wafer 910 (i.e., the bottom 922 of the isolation trench 920). The silicon dioxide mask can be etched in a Freon gas mixture, such as CHF3 or CF4. High etch rates for silicon dioxide etching can be achieved using a high density plasma reactor, such as an inductively coupled plasma ("ICP") chamber. These ICP chambers can use a high power radio frequency (RF) source to maintain a high density plasma on the wafer and a low power RF bias to achieve high etch rates at low ion energies. Oxide etch rates of 200 nm / min and selectivity to photoresist greater than 1:1 can occur in this hardware configuration.

[0208] like Fig. 9CAs shown, isolation trenches 920 can be formed in silicon wafer 910 by deep reactive ion etching of silicon using high etching rate and high selectivity. The trenches can be etched in high-density plasma using a sulfur hexafluoride (SF6) gas mixture, as described in U.S. Pat. No. 5,501,893. The etching can be controlled so that the profile of the isolation trench 920 is concave or tapered, wherein the top 924 of the isolation trench 920 is narrower than the bottom 922 of the isolation trench 920. The tapering of the isolation trench 920 can allow electrical insulation in subsequent processing. In reactive ion etching, the profile taper can be achieved by adjusting the degree of passivation, or by changing the discharge parameters (power, gas flow, pressure) during the etching process. Because the isolation trench 920 can be filled with a dielectric material, the width of the opening at the top 924 of the isolation trench 920 can be typically less than 2 μm. The depth of the isolation trench 920 can be in the range of 10-50 μm. The isolation trench 920 can be etched to stop at the buried oxide layer 912. The procedure for etching the isolation trench 920 can be to alternately perform etching steps (SF6 and argon mixture) and passivation steps (Freon with argon) in an ICP plasma to achieve an etching rate of more than 2 μm / min at high selectivity to photoresist (>50:1) and high selectivity to oxide (>100:1). The power and time of the etching cycle can be increased as the trench deepens to achieve a tapered profile. Although the trench geometry can be concave, any trench profile can be accommodated by adjustments in microstructure processing. Good isolation results can be achieved with any of a number of known trench etching chemicals. After etching the silicon trench, the photoresist layer 916 can be removed using wet chemical or dry ashing techniques, and the mask layer 914 can be removed using reactive ion etching ("RIE") or buffered hydrofluoric acid.

[0209] refer to Fig.9D, the isolation trench 920 can be filled with an insulating dielectric material (e.g., silicon dioxide). The filling process can produce a mostly solid isolation segment in the isolation trench 920, a dielectric material layer can be deposited on the top side 10 (top surface) of the silicon wafer 910, and a dielectric layer can be deposited on the sidewalls 928 and bottom 922 of the isolation trench 920. The thickness of the deposited layer can exceed 1 μm. This filling can be achieved using chemical vapor deposition ("CVD") techniques or using oxidation of silicon at high temperatures. In thermal oxidation, the wafer can be exposed to an oxygen-rich environment at a temperature of 900-1150°C. This oxidation process can consume the silicon surface to form silicon dioxide. The volume expansion caused by this process may cause the sidewalls of the trench to encroach on each other, ultimately closing the trench opening. In CVD filling, some dielectric can be deposited on the walls, but the filling can occur from being deposited on the bottom of the trench. CVD dielectric filling of the trench can be demonstrated using tetraethyl orthosilicate (TEOS) or silane mixtures in a plasma enhanced CVD chamber and a low pressure CVD furnace.

[0210] During the isolation trench 920 fill process, the isolation trench profile may be incompletely filled, resulting in the formation of an interface 932 and a void 930 in the isolation trench 920. Local concentrations of stress in the void 930 may cause electrical and mechanical failure of some devices, but may not interfere with the micromechanical device due to the closed geometry of the isolation trench 920. The interface 932 and the void 930 may be eliminated by shaping the isolation trench 920 to be wider at the isolation trench opening at the top 924 of the isolation trench 920 than at the bottom 922 of the isolation trench 920. However, good electrical isolation may allow for the use of additional tapering of the microstructure trench etch in later operations. Another artifact of the isolation trench fill process may be a recess 926 that may be formed in the surface of the mask layer 914, located in the center of the isolation trench 920. Depending on the thickness of the deposition, this recess may be as deep as 0.5 μm. To remove the recess 926, the surface may be planarized to form a flat or substantially flat surface, such as Fig.9E As shown, for subsequent lithography and deposition steps. Planarization is performed by chemical mechanical polishing (CMP) or by depositing a viscous material (which can be a photoresist, spin-on glass, or polyimide) and flowing the material to fill the recess 926 to a smooth finish. During the back etch of the viscous material (which can be a second step of planarization), the surface can be uniformly etched, including the filled recess. Therefore, by removing a portion of the surface oxide layer, the recess 926 can be removed to produce a layer of uniform thickness. For example, if the thickness of the mask layer 914 is initially 2μm, planarization to remove the recess 926 may leave a mask layer 914 with a final thickness of less than 1μm. The top side 10 (upper surface) of the silicon wafer 910 can be free of defects and can be ready for further lithography and deposition.

[0211] Fig.9F A silicon wafer 910 with a mask layer 914 and an isolation trench 920 is shown. After the isolation trench 920 is made, a mask layer for a blade can be patterned photolithographically on the bottom side 20 (back side) of the silicon wafer 910 using front-to-back alignment. A blade pattern 972 can be exposed and etched into the mask layer 914. The mask layer 914 can be a layer consisting of a combination of thermally grown silicon oxide and an oxide deposited by chemical vapor deposition. It can also include a metal layer, such as aluminum. The photolithographic pattern can be transferred to the mask layer by reactive ion etching, but the silicon blade etching can not be completed until later in the process. In the absence of blade etching, the wafer can be easily processed by the remaining device layers. The back side of the blade pattern 972 can usually be aligned to the isolation trench 920 on the top side to within a few microns.

[0212] The metallization on the top side 10 of the silicon wafer 910 may be as follows Figure 9G 910. In order to contact the silicon wafer 910 below, the through hole 952 can be patterned and etched into the mask layer 914 using photolithography and reactive ion etching. In some areas, the through hole can be etched through the buried oxide layer 912 and filled with polysilicon to produce a polysilicon through hole 950. After the through hole 952 is etched, metallization can be deposited to form a metal layer 940 and patterned to form a metal interconnect 956 and a contact 954 through the through hole 952 to the silicon wafer 910. For one embodiment, the metal can be aluminum and can be patterned using wet etching techniques. In a mirror array with a high interconnect density, patterning the metal using dry etching or evaporated metal lift-off techniques can achieve finer line widths. The metal layer 940 can be used to provide bonding pads and interconnects that can connect electrical signals from a control circuit to the mirror to control mirror actuation.

[0213] Deposition of a second metal layer 960 can provide a reflector surface. This metal can be tuned to provide high mirror reflectivity at the optical wavelength of interest and can be evaporated and patterned using lift-off techniques to allow a wider selection of metallization techniques. The metallization can be made of 500nm of aluminum. However, additional metal stacks such as Cr / Pt / Au can be used to increase reflectivity in wavelength bands common to optical fibers. Because the metal may be deposited under stress and may affect the final mirror flatness, reducing the thickness of the mask layer 914 in the area of ​​the mirror can be achieved by using dry etching of the underlying dielectric prior to evaporation.

[0214] exist Figure 9H, top side processing can be completed. First, a passivation dielectric layer (not shown) can be applied to protect the metallization during subsequent processing. The passivation dielectric layer can be removed in the area of ​​the bonding pad. Secondly, multiple etches of the grooves 921 that define the separated structural elements can be used to define the mirror structure including the frame, mirror and support. The etching can be self-aligned and performed through various metals, dielectrics and silicon wafers 910. Another blanket deposition can be applied to the top side, which passivates the sidewalls of the grooves 921 and prepares the top side for mechanical release.

[0215] like Fig.9I As shown, the backside silicon etch can transfer the blade pattern 972 into the silicon wafer 910 substrate to obtain the blade 970. The technique disclosed in U.S. Pat. No. 5,501,893 can be used to perform etching using deep silicon etching with high selectivity to oxide. The deep silicon etching achieves a nearly vertical profile in the blade 970, which can be nominally 5-20 μm wide and over 300 μm deep. The etching stops at the buried oxide layer 912 to provide a uniform depth across the wafer without penetrating the top side 10 surface of the silicon wafer 910. Since the etching stops at the buried oxide layer 912, the elongated member 148 can be eliminated to eliminate etching depth variations on the device. Therefore, different patterns may be possible. The blade 970 can be etched on the mirror element and the mirror array at the same time. The buried oxide layer 912 can be etched at this time.

[0216] refer to Figure 9J , because the device wafer is now ready for microstructure release, the device wafer 220 may become more susceptible to yield loss due to processing shock or airflow. To facilitate processing and help hermetically seal the mirror array, the silicon wafer 210 (or substrate wafer) can be bonded to the device wafer 220 to protect the blade after release. For one embodiment, bonding can be achieved by using a bonding element 211a such as a sintered glass material bonding element, which can be heated to its flow temperature and then cooled. In this way, the bonding element 211a at a temperature of 400°C creates an airtight seal to surround the mirror array. The separation between the device wafer 220 and the silicon wafer 210 using a bonding element 211a such as a sintered glass material bonding element can allow the blade to swing through high rotation angles without resistance. Typically, the spacing can be greater than 25μm.

[0217] exist Figure 9KIn the embodiment of the present invention, a final structural release is achieved on the top side of the wafer using a combination of dry etching of silicon dioxide and silicon, which pierces the grooves 921 to suspend the movable elements of the mirror 236 and the frame 230. In addition, the release etch helps to electrically isolate by separating the silicon of the frame 230, for example, from the silicon of the surrounding components 238a, 238b and the device wafer 220. The vias 952 are used to connect the areas of silicon to the metal interconnects 956 ( Figure 9G 242). To seal the mirror from the external environment, a cover wafer 250 is bonded to the device wafer 220, for example, by bonding elements 222a and 222b (e.g., fritted glass seals). The cover wafer 250 is typically glass, which allows incident light to be transmitted with low loss in the mirror cavity 242, reflected off the upper surface of the mirror 236, and transmitted out of the mirror cavity 242.

[0218] In another variation, the silicon wafer 210 is coated with a mask layer 1002 ( Fig. 10A 1002 (as shown). This mask layer can be composed of a combination of thermally grown silicon oxide and oxide deposited by chemical vapor deposition. It can also include a metal layer, such as aluminum, germanium or gold, such as can be used for eutectic or thermal compression bonding. Standard photolithography and reactive ion etching are used to pattern the mask layer 1002 (as shown). Fig. 10B 1002 into the silicon wafer 210 substrate to obtain support anchors 212b and bonding surfaces 212a and 212c. The etching is performed using the techniques disclosed in U.S. Patent 5,501,893 using deep silicon etching with high selectivity to oxides. The etching depth allows the blade 970 to swing through high rotation angles without resistance. Typically, the depth used is greater than 25 μm. At 212a and 212c, the silicon wafer 210 is bonded to the device wafer 220 using, for example, eutectic bonding, thermocompression bonding, fusion bonding, or anodic bonding. During the bonding process, the support anchor 212B may contact the support webbing 234 (e.g., Figure 2B ). In some configurations, support anchor 212B is bonded to support webbing 234. In other configurations, support anchor 212B is proximate to, but not in contact with, support webbing 234. The bond or contact between support anchor 212B and support webbing 234 reduces any coupled mechanical motion from mirror 236 through their common anchor.

[0219] Although preferred embodiments of the present invention have been shown and described herein, it will be apparent to those skilled in the art that these embodiments are provided only as examples. Without departing from the present invention, those skilled in the art will now expect many variations, changes and replacements. It should be understood that various alternatives of the embodiments of the present invention described herein may be adopted in practicing the present invention. Any claims provided are intended to limit the scope of the present invention, and therefore methods and structures within the scope of these claims and their equivalents are covered.

Claims

1. A micro-electromechanical (MEM) array, comprising: a first platform including a first platform reflective surface; a second platform including a second platform reflective surface; A substrate wafer, located below the first platform and the second platform; a first frame pivotally coupled to the first platform; and Wherein, the first frame is pivotally coupled to a second frame, the second frame comprising a second frame high aspect ratio (AR) member, the second frame high aspect ratio (AR) member being operable to reduce mechanical movement of the second platform.

2. The MEM array according to claim 1, wherein: The second frame high AR member is positioned to contact the mirror cavity wall of the first platform, and the contact between the second frame high AR member and the mirror cavity wall can be used to reduce mechanical movement of the second platform.

3. The MEM array according to claim 1, wherein: The second frame includes additional second frame high AR members.

4. The MEM array according to claim 3, wherein: The additional second frame high AR component is positioned to contact the mirror cavity wall of the first platform, and the contact between the additional second frame high AR component and the mirror cavity wall can be used to reduce the mechanical movement of the second platform.

5. The MEM array according to claim 3, wherein: The additional second frame high AR member is substantially parallel to the second frame high AR member.

6. The MEM array according to claim 3, wherein: The second frame high AR component and the additional second frame high AR component have overlapping x-axis coordinates.

7. The MEM array according to claim 1, wherein: The second frame includes one or more side members, wherein the one or more side members are substantially perpendicular to the second frame high AR member.

8. The MEM array according to claim 1, wherein: The mechanical motion includes harmonic resonance.

9. The MEM array according to claim 1, wherein: The second frame high AR component is positioned to contact the mirror cavity wall of the first platform, and the first frame is pivotally coupled to a third frame, a fourth frame and a fifth frame, the third frame including a third frame high AR component positioned to contact the mirror cavity wall, the fourth frame including a fourth frame high AR component positioned to contact the mirror cavity wall, and the fifth frame including a fifth frame high AR component positioned to contact the mirror cavity wall.

10. The MEM array according to claim 1, wherein: The second frame is substantially free of apertures.

11. The MEM array according to claim 1, wherein: The substrate wafer includes support anchors operable to reduce mechanical movement of the second platform.

12. The MEM array according to claim 1, wherein: One or more of the following are met: The second frame is a fixed frame, The substrate wafer comprises a silicon wafer, The first platform reflective surface has a first resonant frequency, and The second platform reflective surface has a second resonant frequency.

13. A micro-electromechanical (MEM) actuator array, comprising: a first platform including a first platform reflective surface; a second platform including a second platform reflective surface; A substrate wafer, located below the first platform and the second platform; as well as a first frame pivotally coupled to the first platform, wherein the first frame is pivotally coupled to a first fixed frame, Wherein, the first fixed frame is coupled to a first fixed frame support anchor, and the first fixed frame support anchor can be used to reduce the mechanical movement of the second platform. 14 . The MEM of claim 13 , further comprising a first fixed frame AR member positioned to contact a mirror cavity wall of the first platform. 15 . The MEM according to claim 14 , further comprising an additional first fixing frame AR member positioned to contact the mirror cavity wall of the first platform. 16 . The MEM according to claim 14 , further comprising an additional first fixed frame AR member, the additional first fixed frame AR member being substantially parallel to the first fixed frame high AR member.

17. The MEM according to claim 14, further comprising an additional first fixing frame AR member, wherein: The first fixed frame AR member and the additional first fixed frame AR member have overlapping x-axis coordinates.

18. The MEM according to claim 14, wherein: The first fixed frame includes one or more side members, wherein the one or more side members are substantially perpendicular to the first fixed frame high AR member.

19. The MEM according to claim 13, wherein: The first fixing frame is substantially free of apertures.

20. The MEM according to claim 13, wherein: The substrate wafer includes a support anchor between the first platform and the second platform to reduce mechanical movement of the second platform.

21. The MEM according to claim 13, further comprising: a second fixed frame coupled to a second fixed frame support anchor operable to reduce mechanical movement of the third platform, a third fixed frame coupled to a third fixed frame support anchor operable to reduce mechanical movement of the fourth platform, and A fourth fixed frame is coupled to a fourth fixed frame support anchor operable to reduce mechanical movement of the fifth platform.

22. A method for reducing coupling between adjacent platforms in a microelectromechanical (MEM) array, comprising: coupling the movable frame to a platform having a reflective surface and to a fixed frame; as well as The transfer of mechanical motion from the platform to adjacent platforms is reduced by one or more of the following: coupling one or more fixed frame high aspect ratio (AR) members to the fixed frame, or One or more fixed frame support anchors are coupled to the fixed frame.

23. The method according to claim 22, wherein: The one or more fixation frame high aspect ratio (AR) members are positioned to contact the mirror cavity wall.

24. The method according to claim 22, wherein: The one or more fixed frame support anchors have a selected surface area that is oriented toward a surface area of ​​one or more flanking members of the fixed frame.

25. The method according to claim 22, wherein: The fixed frame includes one or more side members that are substantially perpendicular to the one or more fixed frame high AR members.

26. The method of claim 22, wherein: The fixed frame is substantially free of apertures.

27. A method for manufacturing a microelectromechanical (MEM) array, comprising: forming a layer of dielectric material on a first side of the substrate; forming a vertical isolation trench containing a dielectric material on the first side of the substrate; patterning a mask layer on a second side of the substrate opposite the first side of the substrate; forming a through hole on the first side of the substrate; metalizing the first side of the substrate; depositing a second metal layer on the first side of the substrate to form a reflective surface; forming a second trench on the first side of the substrate to define a structure; deep etching the second side of the substrate to form a narrow blade; bonding a base wafer to the second side of the substrate after forming the narrow blade; as well as etching through the second trench on the first side of the substrate to release the structure and provide electrical isolation, Wherein, the micro-electromechanical array comprises: A first platform including a first platform reflective surface; a second platform including a second platform reflective surface; A substrate wafer, located below the first platform and the second platform; a first frame pivotally coupled to the first platform, Wherein, the first frame is pivotally coupled to a second frame, the second frame comprising one or more of the following: a second frame high aspect ratio (AR) member or a second frame support anchor.

28. The method according to claim 27, wherein: The substrate includes a silicon wafer.

29. The method according to claim 27, wherein: The dielectric material is silicon dioxide.

30. The method of claim 27, further comprising forming a passivation dielectric layer on the first side of the substrate after metallizing the first side of the substrate.

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