Optoelectronic device with patterned metal and metal fluoride implant layer

Abstract

An optoelectronic device having a plurality of layers each extending in a lateral orientation includes at least one emission region extending in a first portion of the lateral orientation and a patterned coating extending in a second portion of the lateral orientation on a first layer interface. The at least one emission region includes a first electrode and a second electrode and at least one semiconductive layer therebetween. The second electrode includes an electrode material. An implant layer between the at least one semiconductive layer and the second electrode includes an implant material. The patterned coating is adapted to affect the propensity of vapor flux of at least one of the electrode material and the implant material to condense on the patterned coating. The distal layer interface of the patterned coating is substantially free of a closed coating of a material comprising at least one of the electrode material and the implant material.

Description

[0001] Related patent applications

[0002] This application claims the benefit of priority to U.S. Provisional Patent Application No. 63 / 358,037, filed on July 1, 2022, the contents of which are incorporated herein by reference in their entirety. Technical Field

[0003] The present disclosure relates to layered semiconductor devices, and in some non-limiting examples to layered optoelectronic devices having multiple sub-pixel emission regions, each sub-pixel comprising a first electrode and a second electrode separated by a semiconductor layer, wherein at least one of the electrode and a conductive coating electrically coupled thereto can be patterned by depositing a patterned coating, which patterned coating can satisfy at least one of the following conditions: functioning as a nucleation inhibition coating and being a nucleation inhibition coating. Background Art

[0004] In an optoelectronic device such as an organic light emitting diode (OLED), at least one semiconductive layer may be disposed between a pair of electrodes such as an anode and a cathode. The at least one semiconductive layer is defined by a stack of emission region layers. The anode and the cathode may be electrically coupled to a power source and generate holes and electrons, respectively, which migrate toward each other through the at least one semiconductive layer. When a pair of holes and electrons combine, EM radiation in the form of photons may be emitted in the emission region layer as an emission layer (EML). In some non-limiting examples, at least one of the following may be disposed between the anode and the EML: a hole injection layer (HIL) and a hole transport layer (HTL). In some non-limiting examples, the HIL may be disposed between the anode and the HTL. In some non-limiting examples, at least one of the following may be disposed between the cathode and the EML: an electron injection layer (EIL) and an electron transport layer (ETL). In some non-limiting examples, the EIL may be disposed between the cathode and the ETL.

[0005] In some non-limiting examples, at least one of the emission region layers may be deposited by vacuum-based (vapor-phase) deposition of the corresponding constituent emission region layer material.

[0006] An OLED display panel, such as an active matrix OLED (AMOLED) panel, may include a plurality of pixels, each pixel further including a plurality of (including but not limited to one of three and four) sub-pixels. In some non-limiting examples, the various sub-pixels of a pixel may be characterized by at least one of: three and four different colors (including but not limited to R (red), G (green), and B (blue)). Each (sub)pixel may have an associated emission region including an associated pair of electrodes and a stack of at least one semiconductive layer between the electrodes. In some non-limiting examples, each sub-pixel of a pixel may emit EM radiation, including but not limited to photons, having an associated wavelength spectrum characterized by a given color (including but not limited to one of R (red), G (green), B (blue), and W (white)). In some non-limiting examples, the (sub)pixel may be selectively driven by a drive circuit including at least one thin film transistor (TFT) structure electrically coupled to a conductive metal line within a substrate, on which the electrodes and at least one semiconductive layer are deposited in some non-limiting examples. In some non-limiting examples, the various coatings (layers) of such panels may be formed by vacuum-based deposition processes.

[0007] In an AMOLED panel, a subpixel may emit EM radiation when a voltage is applied between the anode and cathode of the subpixel. By controlling the voltage applied between the anode and cathode, the emission of EM radiation from each subpixel of such a panel may be controlled. In the case where a common cathode is provided across multiple subpixels, the voltage across the anode and cathode in each subpixel may be controlled by modulating the voltage of the anode. In some non-limiting examples, adjacent anodes may be spaced apart in a lateral direction, and at least one non-emissive region may be provided between them.

[0008] In some non-limiting examples, a goal may be to provide at least one of: a conductive deposited layer in a pattern and a thin dispersed layer of metal nanoparticles (NPs) in an optoelectronic device during a manufacturing process.

[0009] In some non-limiting examples, such a conductive deposition layer may be provided by selectively depositing a conductive deposition material, and may form device features including, but not limited to, at least one of: an electrode and a conductive element electrically coupled thereto.

[0010] In some non-limiting examples, such NP layers may be composed of deposited materials and may affect the performance of the device in at least one of the following aspects: optical properties, performance, stability, reliability, and lifetime.

[0011] In some non-limiting examples, providing at least one of such a deposited layer and an NP layer may be achieved by selectively depositing a patterned coating comprising a patterned material, wherein the patterned material provides a combination of material properties at a layer interface of the patterned coating that may affect the ability of the deposited material to be deposited on the patterned coating, the deposited material including but not limited to being one of the following: a closed coating of the deposited material and a discontinuous layer of at least one granular structure, respectively, and the patterned coatings may each include multiple material properties with complex interrelationships, such that achieving a given combination of properties using a single combination may be challenging.

[0012] It is known to use a combination of materials in a coating to adjust its properties, including but not limited to changing its performance as at least one of: a light emitting layer and a charge transport layer, including but not limited to:

[0013] The emission layer in an OLED device comprising a plurality of materials may exhibit significant performance in terms of light emission, the plurality of materials including but not limited to one of the following: an organic fluorescent dye (C545T) doped in an organic host material (Alq3), a phosphorescent metal-organic complex (Ir(pph)3) doped in an organic host material (CBP), an organic thermally activated delayed fluorescence (TADF) material doped in an organic host material, and a superfluorescent emitter doped in an organic host material;

[0014] The transport layer in an OLED device including a plurality of materials including but not limited to one of the following can exhibit significant thermal stability: HTL and ETL, the plurality of materials including but not limited to one of the following: organic material (C 60 ) and two organic materials mixed together;

[0015] · One of the following can achieve significant charge balance: transport layers (including but not limited to one of the following: HTL and ETL) and emissive host layers in OLED devices including multiple materials including but not limited to hole and electron transport organic materials;

[0016] The charge injection layers including but not limited to the HIL and the EIL in an OLED device including multiple materials including but not limited to one of the following: two inorganic materials (lithium fluoride (LiF), ytterbium (Yb)) and an inorganic material (LiF) mixed with an organic material (Alq3) can exhibit remarkable device performance; and

[0017] • Diarylethene (DAE) molecules mixed with polymers can be used to selectively pattern Mg while reducing the amount of DAE molecules used.

[0018] In some non-limiting examples, the goal may be to provide a patterned coating comprising multiple materials selected to tune their properties including, but not limited to, a given combination of multiple material properties to provide improved selective deposition of a conductive coating. Summary of the invention

[0019] It is an object of the present disclosure to obviate or mitigate at least one of the disadvantages of the prior art.

[0020] The present disclosure discloses an optoelectronic device having a plurality of layers each extending in a lateral direction, the optoelectronic device comprising at least one emitting region extending in a first portion of the lateral direction and a patterned coating extending in a second portion of the lateral direction at a first layer interface. The at least one emitting region comprises a first electrode and a second electrode and at least one semiconductive layer therebetween. The second electrode comprises an electrode material. An injection layer between the at least one semiconductive layer and the second electrode comprises an injection material. The patterned coating is adapted to affect the propensity of vapor flux of at least one of: the electrode material and the injection material to condense on the patterned coating. The distal layer interface of the patterned coating is substantially free of a closed coating of material comprising at least one of: the electrode material and the injection material.

[0021] According to a broad aspect, an optoelectronic device having multiple layers is disclosed, each of which extends in a lateral direction, the optoelectronic device comprising: at least one emission region, the at least one emission region extending in a first portion of the lateral direction and comprising: a first electrode and a second electrode, the second electrode comprising an electrode material; at least one semiconductive layer, the at least one semiconductive layer being located between the first electrode and the second electrode; and an injection layer, the injection layer being located between the at least one semiconductive layer and the second electrode and comprising an injection material; and a patterned coating, the patterned coating extending in the second portion of the lateral direction at the first layer interface and being suitable for affecting the propensity of the vapor flux of at least one of: the electrode material and the injection material to condense on the patterned coating; wherein the distal layer interface of the patterned coating is substantially free of a closed coating of a material comprising at least one of: the electrode material and the injection material.

[0022] In some non-limiting examples, the implant layer may have an average layer thickness of one of between approximately 0.5-3 nm and 1-2 nm.

[0023] In some non-limiting examples, the second electrode may be a cathode and the injection layer may be an electron injection layer.

[0024] In some non-limiting examples, the electrode material may include at least one of: magnesium (Mg), silver (Ag), and MgAg.

[0025] In some non-limiting examples, the implant material may include at least one of: at least one metal and at least one metal fluoride.

[0026] In some non-limiting examples, the implant material may include lithium quinolinate (Liq).

[0027] In some non-limiting examples, the at least one metal of the implant material may include at least one of: a metal halide, a metal oxide, and a lanthanide metal.

[0028] In some non-limiting examples, the metal halide may include an alkali metal halide.

[0029] In some non-limiting examples, the metal halide may include at least one of the following: lithium oxide (Li 2 O), barium oxide (BaO), sodium chloride (NaCl), rubidium chloride (RbCl), rubidium iodide (RbI), potassium iodide (KI), and copper iodide (CuI).

[0030] In some non-limiting examples, the lanthanide metal may include ytterbium (Yb).

[0031] In some non-limiting examples, the at least one metal fluoride of the implant material may include a fluoride of at least one of: an alkali metal, an alkaline earth metal, and a rare earth metal.

[0032] In some non-limiting examples, the at least one metal fluoride of the implanted material may be at least one of: cesium fluoride (CsF), lithium fluoride (LiF), potassium fluoride, rubidium fluoride, sodium fluoride, beryllium fluoride, magnesium fluoride, calcium fluoride, strontium fluoride, barium fluoride, scandium fluoride, neodymium fluoride, ytterbium fluoride; yttrium fluoride, erbium fluoride, lanthanum fluoride, samarium fluoride, terbium fluoride and thulium fluoride.

[0033] In some non-limiting examples, the implant material may include a mixture of at least one metal of the implant material and at least one metal fluoride of the implant material.

[0034] In some non-limiting examples, the mixture may have a composition range of the metal of the implant material to the metal fluoride of the implant material between about 1:10-10:1.

[0035] In some non-limiting examples, the metal of the implant material and the metal fluoride of the implant material may have a composition of about 1:1.

[0036] In some non-limiting examples, the first layer interface may be a distal layer interface of the at least one semiconductive layer.

[0037] In some non-limiting examples, the patterned coating can include a seal coating along at least a portion of the first layer interface.

[0038] In some non-limiting examples, the at least one semiconductive layer may extend into the second portion.

[0039] In some non-limiting examples, the injection layer may be deposited on a second layer interface that is a distal layer interface of the at least one semiconducting layer.

[0040] In some non-limiting examples, the second layer interface can be continuous with the first layer interface.

[0041] In some non-limiting examples, both the first layer interface and the second layer interface may be distal layer interfaces of a common layer.

[0042] In some non-limiting examples, in at least the first portion, the at least one semiconductive layer may include at least one emission layer, and the injection layer may be disposed between the at least one emission layer and the second electrode.

[0043] In some non-limiting examples, in at least the first portion, the at least one semiconducting layer may include at least one transport layer disposed between the at least one emitting layer and the injection layer.

[0044] In some non-limiting examples, in at least the first portion, the distal layer interface of the at least one semiconductive layer may be a distal layer interface of a transmission layer thereof.

[0045] In some non-limiting examples, the first layer interface may be a distal layer interface of the at least one semiconductive layer between the substrate and a transmission layer of the at least one semiconductive layer.

[0046] In some non-limiting examples, a lateral extent of the at least one emitting region in the first portion includes a geometric intersection of: a first electrode, a second electrode, and at least one semiconducting layer therebetween.

[0047] In some non-limiting examples, the first electrode may be an anode.

[0048] In some non-limiting examples, the optoelectronic device may further include at least one particle structure disposed on a surface of the first layer in the second portion.

[0049] In some non-limiting examples, the at least one particulate structure may include at least one of: an electrode material; and an implant material.

[0050] In some non-limiting examples, the at least one particulate structure can include a metal fluoride of the at least one particulate structure.

[0051] In some non-limiting examples, the metal fluoride of the at least one particle structure can be substantially the same as the metal fluoride of the implant material.

[0052] In some non-limiting examples, the at least one grain structure can include at least one seed.

[0053] In some non-limiting examples, the at least one seed can include the implant material.

[0054] In some non-limiting examples, the at least one seed crystal may be coated with at least one electrode material.

[0055] In some non-limiting examples, the optoelectronic device may include a cover coating extending across the first portion and the second portion.

[0056] In some non-limiting examples, the capping material may include a metal fluoride of the capping material.

[0057] In some non-limiting examples, the metal fluoride of the capping material may be substantially the same as the metal fluoride of the implant material.

[0058] In some non-limiting examples, the patterned coating may have an average layer thickness that exceeds one of: an average layer thickness of the injection layer and an average layer thickness of the second electrode.

[0059] In some non-limiting examples, the patterned coating can have an average layer thickness that exceeds a combined average layer thickness of the injection layer and the second electrode. BRIEF DESCRIPTION OF THE DRAWINGS

[0060] Examples of the present disclosure will now be described with reference to the following drawings, wherein the same reference numerals in different drawings indicate at least one of the same elements and, in some non-limiting examples, similar elements and corresponding elements, and wherein:

[0061] Figure 1 is a simplified block diagram of an example device according to an example in the present disclosure viewed from a portrait orientation, the device having a plurality of layers in a lateral orientation formed by selectively depositing a patterned coating in a first portion of the lateral orientation followed by depositing a closed coating of a deposited material in a second portion thereof;

[0062] Figure 2 is a SEM micrograph of a sample fabricated in an example of the present disclosure;

[0063] Figure 3 According to the examples in this disclosure Figure 1 A simplified illustration of an exemplary version of a device of from a longitudinal orientation, wherein the closed coating of deposited material in the second portion forms a second electrode of the optoelectronic device;

[0064] Figure 4 is a schematic diagram illustrating an example cross-sectional view of an example display panel according to an example in the present disclosure, the example display panel having a plurality of layers including at least one hole therein through which at least one electromagnetic signal may be exchanged;

[0065] Figure 5 is a diagram showing an example of a method for Figure 1 Schematic diagram of an example process for depositing a patterned coating in a certain pattern on an exposed surface of an underlying layer in an example version of a device;

[0066] Figure 6 is shown for use in the Figure 4 A schematic diagram of an example process for depositing a deposition material in a second portion on an exposed layer surface of a deposition pattern of a patterned coating, wherein the patterned coating is a nucleation inhibition coating (NIC);

[0067] Fig. 7A It is shown in cross-sectional view Figure 1 A schematic diagram of an example type of device;

[0068] Figure 7B The supplementary plan view shows Fig. 7A A schematic diagram of a device;

[0069] FIG. 8A to FIG. 8B is a schematic diagram illustrating various potential behaviors of a patterned coating according to various examples of the present disclosure, the patterned coating being located at Figure 1 A deposition interface with a deposited layer in an example version of a device;

[0070] 9A to 9H According to the examples in this disclosure Figure 1 A simplified block diagram of an example version of a device viewed from a cross-section, showing various examples of possible interactions between a particle structure patterned coating and a particle structure;

[0071] Fig.10 is a schematic diagram showing an example according to the present disclosure Figure 3 Example cross-sectional views of example versions of devices of the invention, and additional example deposition steps;

[0072] Fig.11 is a schematic diagram that may illustrate example stages of an example process for manufacturing an example version of an OLED device having sub-pixel regions having second electrodes of different thicknesses according to examples in the present disclosure;

[0073] Fig.12is a schematic diagram showing an example cross-sectional view of an example version of an OLED device according to an example in the present disclosure, wherein the second electrode is coupled to the auxiliary electrode;

[0074] Fig.13 is a schematic diagram showing an example cross-sectional view of an example version of an OLED device according to an example in the present disclosure, the example version having a partition and a shielding area, such as a recessed portion, in a non-emissive region thereof;

[0075] FIG. 14A to FIG. 14B is a schematic diagram showing an example cross-sectional view of an example OLED device having partitions and shielding areas (such as holes) in non-emissive areas according to various examples in the present disclosure;

[0076] Fig.15 is an example energy distribution showing energy states of surface adatoms adsorbed onto a surface according to examples in the present disclosure;

[0077] Fig.16 is a schematic diagram showing the formation of a membrane core according to an example in the present disclosure; and

[0078] Fig.17 is a block diagram of an example computer device within a computing and communications environment that may be used to implement apparatus and methods according to representative examples of the present disclosure.

[0079] In the present disclosure, a reference numeral appended with at least one of at least one numerical value (including, but not limited to, appended in at least one of a superscript and a subscript) and at least one alphabetic character (including, but not limited to, in lower case) may be considered to refer to a specific instance of the feature (element) described by the reference numeral and at least one of a subset thereof. As indicated by the context, reference to a reference numeral without reference to at least one of the appended value and character may generally refer to the feature described by the reference numeral and at least one of the set of all instances described by it. Similarly, a reference numeral may be replaced by the letter "x" in place of a numeral. As indicated by the context, reference to such a reference numeral may generally refer to the feature described by the reference numeral, wherein the character "x" is replaced by a numeral and the set of all instances described by it.

[0080] In the present disclosure, for the purpose of illustration rather than limitation, specific details are set forth to provide a thorough understanding of the present disclosure, including but not limited to specific architectures, interfaces, and technologies. In some instances, detailed descriptions of well-known systems, technologies, components, devices, circuits, methods, and applications are omitted to avoid obscuring the description of the present disclosure with unnecessary details.

[0081] Additionally, it should be appreciated that the block diagrams presented herein may represent conceptual views of illustrative components embodying the principles of the technology.

[0082] Accordingly, system and method components have been represented in the drawings by conventional symbols where appropriate, with only those specific details relevant to an understanding of the examples of the present disclosure being shown so that the disclosure is not obscured with details that would be apparent to one of ordinary skill in the art having the benefit of the description herein.

[0083] Any drawings provided herein may not be drawn to scale and may not be considered limiting the present disclosure in any way.

[0084] In some examples, any features shown in dashed outline may be considered optional. DETAILED DESCRIPTION

[0085] Layered Devices

[0086] The present disclosure generally relates to a layered semiconductor device 100, and more particularly to an optoelectronic device 300 ( Figure 3 ). Optoelectronic device 300 may generally encompass any device 100 that converts an electrical signal into EM radiation in the form of photons and vice versa. Non-limiting examples of optoelectronic device 300 include organic light emitting diodes (OLEDs).

[0087] A person of ordinary skill in the relevant art will understand that although the present disclosure relates to optoelectronic device 300, its principles are applicable, in some non-limiting examples, to any panel having multiple layers, including but not limited to at least one layer of conductive deposited material 631, which is included as a thin film, and in some non-limiting examples, electromagnetic (EM) signals can partially and completely pass through (including but not limited to) one of the multiple layers at a non-zero angle relative to the plane of at least one of the layers.

[0088] Now go to Figure 1 , which may illustrate a cross-sectional view of an example layered semiconductor device 100. In some non-limiting examples, such as Figure 2 As shown in more detail in , device 100 may include multiple layers deposited on substrate 10 .

[0089] A lateral axis, identified as the X-axis, may be shown with a longitudinal axis, identified as the Z-axis. A second lateral axis, identified as the Y-axis, may be shown as being substantially transverse to both the X-axis and the Z-axis. At least one of the lateral axes may define a lateral orientation of the device 100. The longitudinal axis may define a longitudinal orientation of the device 100.

[0090] The layers of device 100 may extend in a lateral direction substantially parallel to a plane defined by the lateral axis. A person of ordinary skill in the relevant art will appreciate that, in some non-limiting examples, Figure 1The substantially flat representation shown may be an abstraction for purposes of schematic illustration. In some non-limiting examples, there may be localized substantially flat layers of varying thickness and size over the lateral extent of the device 100, including, in some non-limiting examples, the substantial complete absence of at least one layer separated by uneven transition regions (including lateral gaps and even discontinuities).

[0091] Thus, while for illustrative purposes the device 100 may be shown as a substantially layered structure of substantially parallel planar layers in its longitudinal orientation, such device 100 may be locally shown with different topography to define features, each of which may substantially exhibit the layered profile in question in the longitudinal orientation.

[0092] In some non-limiting examples, the lateral orientation of the exposed layer surface 11 of the device 100 may include a first portion 101 and a second portion 102. In some non-limiting examples, the second portion 102 may include a portion of the exposed layer surface 11 of the device 100 outside the first portion 101.

[0093] like Figure 1 As shown, the layers of the device 100 may include a substrate 10 and a patterned coating 110 disposed on at least a portion of an exposed layer surface 11 of the laterally facing substrate 10. In some non-limiting examples, the patterned coating 110 may be confined in a first portion 101 in its lateral extent, and a deposited layer 130 may be disposed as a closed coating 140 on the exposed layer surface 11 of the device 100 in a laterally facing second portion 102 thereof.

[0094] In some non-limiting examples, at least one particle structure 150 may be disposed as a discontinuous layer 160 on the exposed layer surface 11 of the patterned coating 110. In some non-limiting examples, although not shown, at least one of the patterned coating 110, the deposited layer 130, and the at least one particle structure 150 may be deposited on a layer other than the substrate 10 (the lower layer 810 ( Fig. 8A )), including but not limited to an intermediate layer between the substrate 10 and at least one of the patterned coating 110, the deposition layer 130, and the at least one particle structure 150. In some non-limiting examples, the lower layer 810 may include at least one of an alignment layer and an organic support layer.

[0095] In some non-limiting examples, at least one overlying layer 170 may extend across at least one of: the first portion and the second portion. In some non-limiting examples, at least one of the patterned coating 110, the deposition layer 130, and the at least one particle structure 150 may be covered by at least one overlying layer 170. In some non-limiting examples, the overlying layer 170 may be in direct contact with the patterned coating. In some non-limiting examples, at least one intermediate layer may be disposed between the patterned coating 110 and the overlying layer 170.

[0096] In some non-limiting examples, the overlying layer 170 may include an overlying material. In some non-limiting examples, the overlying material may include a metal fluoride.

[0097] In some non-limiting examples, such an overlying layer 170 may include at least one of an encapsulation layer and an optical coating. Non-limiting examples of encapsulation layers include a glass cover, a barrier film, a barrier adhesive, a barrier coating, an encapsulation layer, and a thin film encapsulation (TFE) layer provided to encapsulate the device 100. Non-limiting examples of optical coatings include at least one of the following: optical and structural coatings and at least one component thereof, including but not limited to polarizers, color filters, anti-reflective coatings, anti-glare coatings, cover glass, capping layers (CPL), and optically clear adhesives (OCAs).

[0098] In some non-limiting examples, at least one of the substantially thin patterned coating 110 in the first portion 101 and the deposited layer 130 in the second portion 102 can provide a substantially flat surface on which the overlying layer 170 can be deposited. In some non-limiting examples, providing such a substantially flat surface for coating such an overlying layer 170 can increase its adhesion to such a surface.

[0099] In some non-limiting examples, the optical coating may be used to adjust the optical properties of EM radiation, including but not limited to plasmon modes, that is at least one of transmitted, emitted, and absorbed by the device 100. In some non-limiting examples, the optical coating may be used as at least one of an optical filter, an index matching coating, an optical outcoupling coating, a scattering layer, a diffraction grating, and portions thereof.

[0100] In some non-limiting examples, the optical coating may be used to tune at least one optical microcavity effect in the device 100 by, but not limited to, tuning at least one of the total optical path length and its refractive index. At least one optical property of the device 100 may be affected by tuning at least one optical microcavity effect, including, but not limited to, output EM radiation, including, but not limited to, at least one of its angular dependence of intensity and its wavelength shift. In some non-limiting examples, the optical coating may be a non-electrical component, i.e., the optical coating may not be configured to at least one of conduct and transmit electrical current during normal device operation.

[0101] In some non-limiting examples, the optical coating can be formed from any deposited material 631 , and in some non-limiting examples, any mechanism for depositing the deposited layer 130 as described herein can be employed.

[0102] Patterning

[0103] In some non-limiting examples, reference Figure 1 In some non-limiting examples, a patterned coating 110 including a patterned material 511 (which in some non-limiting examples may be a nucleation inhibition coating (NIC) material) may be disposed as a sealing coating 140 on an exposed layer surface 11 of an underlying layer 810 (including but not limited to a substrate 10) of a device 100, and in some non-limiting examples, the patterned coating 110 may be disposed as a sealing coating 140 on an exposed layer surface 11 of an underlying layer 810 (including but not limited to a substrate 10) of a device 100 by selective deposition (including but not limited to using a shadow mask 515 ( Figure 5 ), such as but not limited to a fine metal mask (FMM), including but not limited to the first portion 101) to limit the lateral range.

[0104] Thus, in some non-limiting examples, in the second portion 102 of the device 100 , the exposed layer surface 11 of the underlying layer 810 of the device 100 may be substantially free of the sealing coating 140 of the patterned coating 110 .

[0105] Patterned coating

[0106] The patterned coating 110 may include a patterned material 511 ( Figure 5 ). In some non-limiting examples, the patterned material 511 may include a NIC material. In some non-limiting examples, the patterned coating 110 may include a closed coating 140 of the patterned material 511.

[0107] The patterned coating 110 may provide an exposed layer surface 11 having a vapor flux 632 ( Figure 6 ) to be deposited on the surface of the exposed layer. Figure 6 ) has a substantially low tendency for deposition (including, but not limited to, a substantially low initial sticking probability (in some non-limiting examples, under conditions identified in the dual QCM technique described by Walker et al.)), which in some non-limiting examples can be significantly less than the tendency for deposition of the deposition material 631 to be deposited on the exposed layer surface 11 of the underlying layer 810 of the device 100 (on which the patterned coating 110 has been deposited).

[0108] Due to the properties of at least one of the patterned coating 110 and the patterned material 511 with respect to deposition of the deposited material 631 (including but not limited to a low initial adhesion probability) (in some non-limiting examples, when deposited as at least one of a film and a coating in some form and under an environment similar to the deposition of the patterned coating 110 within the device 100), the exposed layer surface 11 including the first portion 101 of the patterned coating 110 may be substantially free of the closed coating 140 of the deposited material 631.

[0109] In some non-limiting examples, exposing the device 100 to the vapor flux 632 of the deposition material 631 may, in some non-limiting examples, result in the formation of a closed coating 140 of the deposition layer 130 of the deposition material 631 in the second portion 102, wherein the exposed layer surface 11 of the underlying layer 810 may be substantially free of the closed coating 140 of the patterned coating 110.

[0110] In some non-limiting examples, patterned coating 110 may be a NIC that provides a high deposition (patterning) contrast relative to subsequent deposition of deposited material 631 such that deposited material 631 in some non-limiting examples does not tend to be deposited as a closed coating 140 where patterned coating 110 has been deposited.

[0111] In some non-limiting examples, there may be scenarios where it is desirable to provide patterned coating 110 to cause formation of discontinuous layer 160 of at least one particulate structure 150 when patterned coating 110 in first portion 101 is subjected to vapor flux 632 of deposition material 631. In at least some applications, the properties of patterned coating 110 may be such that closed coating 140 of deposition material 631 may be formed in second portion 102, which may be substantially free of patterned coating 110, while only discontinuous layer 160 of at least one particulate structure 150 having at least one characteristic may be formed on patterned coating 110 in first portion 101.

[0112] For the purpose of simplifying the discussion, in the present disclosure, to the extent that the patterned coating 110 is deposited to serve as a substrate for depositing at least one particle structure 150 thereon, such patterned coating 110 may be designated as a particle structure patterned coating 110. p In contrast, to the extent that the patterned coating 110 is deposited in the first portion 101 to substantially prevent the formation of the blocking coating 140 of the deposition layer 130 in such first portion 101, thereby confining the deposition of the blocking coating 140 of the deposition layer 130 to the second portion 102, such patterned coating 110 may be designated as a non-granular structured patterned coating 110. n A person of ordinary skill in the relevant art will appreciate that, in some non-limiting examples, the patterned coating 110 may function as a particle structure patterned coating 110p and non-particle structure patterned coating 110 n Both.

[0113] In some non-limiting examples, there may be a scenario where a discontinuous layer 160 of at least one granular structure 150 of a deposition material 631 is required to be formed in the second portion 102 (in some non-limiting examples, the deposition material may be one of a metal and a metal alloy, including but not limited to at least one of Yb, Ag, Mg and Ag-containing materials (including but not limited to MgAg), LiF, LiF:Yb, LiF / Yb and Yb / LiF), while a closed coating 140 of the deposition material 631 having a thickness not limited to not more than about 100 nm, 50 nm, 25 nm and 15 nm is deposited. In some non-limiting examples, the amount of deposition material 631 deposited as a discontinuous layer 160 of at least one granular structure 150 in the first portion 101 may correspond to one of between approximately 1%-50%, 2-25%, 5-20% and 7-10% of the amount of deposition material 631 deposited as a sealing coating 140 in the second portion 102, which may correspond to a thickness of no more than at least one of approximately 100nm, 75nm, 50nm, 25nm and 15nm as non-limiting examples.

[0114] In some non-limiting examples, the patterned coating 110 may be disposed in a pattern that may be defined by at least one region of the closed coating 140 where the patterned coating 110 may be substantially absent.

[0115] In some non-limiting examples, the at least one region can separate the patterned coating 110 into a plurality of discrete segments thereof. In some non-limiting examples, the plurality of discrete segments of the patterned coating 110 can be physically spaced apart from each other in their lateral directions. In some non-limiting examples, the plurality of discrete segments of the patterned coating 110 can be arranged in a regular structure (including but not limited to an array (matrix)) such that, in some non-limiting examples, the discrete segments of the patterned coating 110 can be configured in a repeating pattern.

[0116] In some non-limiting examples, at least one of the plurality of discrete segments of patterned coating 110 may each correspond to an emission region 310. In some non-limiting examples, an opening ratio of emission region 310 may be no more than about one of 50%, 40%, 30%, and 20%.

[0117] In some non-limiting examples, patterned coating 110 can be formed as a single, unitary coating.

[0118] Properties of patterned coatings / materials

[0119] composition

[0120] In some non-limiting examples, the patterning material 511 may include an organic-inorganic hybrid material.

[0121] In some non-limiting examples, the patterning material 511 may include one of an oligomer and a polymer including a plurality of monomers.

[0122] Fluorine and Silicon

[0123] In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 511 may include at least one of fluorine (F) atoms and silicon (Si) atoms. In some non-limiting examples, the patterned material 511 used to form the patterned coating 110 may be a compound including at least one of F and Si.

[0124] In some non-limiting examples, the patterned material 511 may include a compound containing F. In some non-limiting examples, the patterned material 511 may include a compound containing F and carbon (C) atoms. In some non-limiting examples, the patterned material 511 may include a compound containing F and C, wherein the atomic ratio of F to C corresponds to a F / C quotient of at least about one of 0.6, 0.8, 0.9, 1.0, 1.3, 1.5, 1.7, and 2.

[0125] In some non-limiting examples, the atomic ratio of F to C can be determined by counting the F atoms present in the compound structure and, for C atoms, counting only the sp atoms present in the compound structure. 3 Hybridized C atoms are counted. In some non-limiting examples, the patterned material 511 may include a compound that includes a portion containing F and C as part of its molecular substructure, wherein the atomic ratio of F to C corresponds to an F / C quotient of at least about one of 0.6, 0.8, 0.9, 1.0, 1.3, 1.5, 1.7, and 2. In some non-limiting examples, the patterned material 511 may include a compound that includes a portion containing F and C as part of its molecular substructure, wherein the atomic ratio of F to C corresponds to an F / C quotient of no more than about one of 3.0, 2.8, 2.5, and 2.3.

[0126] In some non-limiting examples, the compound may be a fluorine-containing polymer, including but not limited to fluorine-containing polymers having the molecular structures of Example Material 3, Example Material 5, Example Material 6, Example Material 7, and Example Material 9. In some non-limiting examples, the compound may be a F-containing block copolymer.

[0127] In some non-limiting examples, the compound can be a fluorine oligomer. In some non-limiting examples, the compound can be a F-containing block oligomer.

[0128] part

[0129] In some non-limiting examples, the patterned material 511 may include a compound having a molecular structure including a plurality of parts. In some non-limiting examples, a first part of the patterned molecular structure may be bonded to at least one second part of the molecular structure of the patterned material 511. In some non-limiting examples, a first part of a molecule of the patterned material 511 may be directly bonded to at least one second part of a molecule of the patterned material 511. In some non-limiting examples, the first part and the second part may be coupled to each other through a third part, including but not limited to bonding.

[0130] In some non-limiting examples, the patterned coating 110 may include multiple materials. In some non-limiting examples, at least one fragment of the molecular structure of at least one material (including but not limited to: at least one of the first material and the second material) of the materials of the patterned coating 110 may be represented by formula (1):

[0131] (Mon) n (1)

[0132] in:

[0133] Mon means monomer, and

[0134] n is an integer of at least 2.

[0135] In some non-limiting examples, n can be an integer of about 2-100, 2-50, 3-20, 3-15, 3-10, 3-7, and 3-4. In some non-limiting examples, the patterning material 511 can be an oligomer of formula (1), wherein n is an integer of about 2-20, 2-15, 2-10, 3-8, and 3-6.

[0136] In some non-limiting examples, the monomer may include a monomer backbone and at least one functional group. In some non-limiting examples, the functional group may be bonded to the monomer backbone by one of the following (including but not limited to): directly and via a linking group. In some non-limiting examples, the monomer may include a linking group, and the linking group may be bonded to the monomer backbone and the functional group. In some non-limiting examples, the monomer may include a plurality of functional groups, which may be one of the following: the same and different from each other. In some non-limiting examples, each functional group may be bonded to the monomer backbone by one of the following (including but not limited to): directly and via a linking group. In some non-limiting examples in which multiple functional groups are present, multiple linking groups may also be present.

[0137] In some non-limiting examples, the monomer backbone can be an inorganic moiety and the at least one functional group can be an organic moiety.

[0138] In some non-limiting examples, the molecular structure of the patterned material 511 may include a plurality of different monomers. In some non-limiting examples, such a molecular structure may include monomer species having at least one of different molecular compositions and molecular structures.

[0139] In some non-limiting examples, the patterning material 511 may include a compound having a molecular structure including a main chain and at least one functional group bonded thereto. In some non-limiting examples, the main chain may be an inorganic portion, and the at least one functional group may be an organic portion.

[0140] In some non-limiting examples, such compounds may have a molecular structure including a siloxane group. In some non-limiting examples, the siloxane group may be one of the following: a straight chain, a branched chain, and a cyclic siloxane group. In some non-limiting examples, the main chain may include a siloxane group. In some non-limiting examples, the main chain may include a siloxane group and at least one functional group comprising F. In some non-limiting examples, the at least one functional group comprising F may be a fluoroalkyl group. In some non-limiting examples, such compounds may include fluorosilicone, including but not limited to example material 6 and example material 9 (discussed below).

[0141] In some non-limiting examples, the compound may have a molecular structure including a silsesquioxane group. In some non-limiting examples, the silsesquioxane group may be POSS. In some non-limiting examples, the backbone may include a silsesquioxane group. In some non-limiting examples, the backbone may include a silsesquioxane group and at least one functional group comprising F. In some non-limiting examples, the at least one functional group comprising F may be a fluoroalkyl group. In some non-limiting examples, such compounds may include fluorine-silsesquioxane and fluorine-POSS, including but not limited to example material 8 (discussed below).

[0142] In some non-limiting examples, the compound may have a molecular structure comprising at least one of a substituted aryl group, an unsubstituted aryl group, a substituted heteroaryl group and an unsubstituted heteroaryl group. In some non-limiting examples, the aryl group may be at least one of a phenyl group and a naphthyl group. In some non-limiting examples, at least one C atom of the aryl group may be substituted with a heteroatom (as a non-limiting example, at least one of oxygen (O), nitrogen (N) and sulfur (S)) to derive a heteroaryl group. In some non-limiting examples, the main chain may include at least one of a substituted aryl group, an unsubstituted aryl group, a substituted heteroaryl group and an unsubstituted heteroaryl group. In some non-limiting examples, the main chain may include at least one of a substituted aryl group, an unsubstituted aryl group, a substituted heteroaryl group and an unsubstituted heteroaryl group and at least one functional group comprising F. In some non-limiting examples, at least one functional group comprising F may be a fluoroalkyl group.

[0143] In some non-limiting examples, the compound may have a molecular structure including at least one of: substituted, unsubstituted, linear, branched, and cyclic hydrocarbon groups. In some non-limiting examples, at least one C atom of the hydrocarbon group may be substituted by a heteroatom, including but not limited to at least one of O, N, and S.

[0144] In some non-limiting examples, the compound may have a molecular structure including a phosphazene group. In some non-limiting examples, the phosphazene group may be at least one of the following: a straight chain, a branched chain, and a cyclic phosphazene group. In some non-limiting examples, the main chain may include a phosphazene group. In some non-limiting examples, the main chain may include a phosphazene group and at least one functional group comprising F. In some non-limiting examples, the at least one functional group comprising F may be a fluoroalkyl group. In some non-limiting examples, such compounds may include fluorophosphazene. In some non-limiting examples, such compounds may be one of the following: example material 4, example material 10, example material 11, example material 12, example material 13, and example material 14 (discussed below).

[0145] In some non-limiting examples, the compound may be a metal complex. In some non-limiting examples, the metal complex may be an organometallic complex. In some non-limiting examples, the organometallic complex may contain F. In some non-limiting examples, the organometallic complex may include at least one ligand containing F. In some non-limiting examples, the at least one ligand containing F may include a fluoroalkyl group.

[0146] As will be understood by those of ordinary skill in the relevant art, the 2 Carbon, sp 3The presence of the material in the coating of at least one of carbon, aromatic hydrocarbon moieties, other functional groups, and other moieties can be detected using various methods known in the art including, but not limited to, X-ray photoelectron spectroscopy (XPS).

[0147] In some non-limiting examples, the monomer may include CF 2 and CF 2 At least one of the H moieties. In some non-limiting examples, the monomer may include CF 2 and CF 3 In some non-limiting examples, the monomer may include CH 2 CF 3 In some non-limiting examples, the monomer may include at least one of C and O. In some non-limiting examples, the monomer may include a fluorocarbon monomer. In some non-limiting examples, the monomer may include at least one of a vinyl fluoride moiety, a vinylidene fluoride moiety, a tetrafluoroethylene moiety, a trifluorochloroethylene moiety, a hexafluoropropylene moiety, and a fluorinated 1,3-dioxole moiety.

[0148] In some non-limiting examples, a first portion of the plurality of portions may include at least one of: an aryl group, a heteroaryl group, a conjugated bond, and a phosphazene group.

[0149] In some non-limiting examples, the first portion may include at least one of a cyclic structure, a cyclic aromatic structure, an aromatic structure, a cage structure, a polyhedral structure, and a cross-linked structure.

[0150] In some non-limiting examples, the first portion may include a rigid structure.

[0151] In some non-limiting examples, the first portion may include at least one of a benzene portion, a naphthalene portion, a pyrene portion, and an anthracene portion.

[0152] In some non-limiting examples, the first portion can include at least one of a cyclotriphosphazene moiety and a cyclotetraphosphazene moiety.

[0153] In some non-limiting examples, the first portion can be a hydrophilic portion.

[0154] In some non-limiting examples, the second portion of the plurality of portions may include at least one of F and Si. In some non-limiting examples, the second portion may include at least one of a substituted and unsubstituted fluoroalkyl group. In some non-limiting examples, the second portion may include C 1 -C 12 Straight chain fluorinated alkyl, C 1 -C 12 Straight chain fluorinated alkoxy, C 3 -C 12Branched fluorinated cyclic alkyl, C 3 -C 12 Fluorinated cyclic alkyl and C 3 -C 12 At least one of the cyclic alkoxy groups is fluorinated.

[0155] In some non-limiting examples, the second portion can include saturated hydrocarbyl groups, and in some non-limiting examples, the presence of any unsaturated hydrocarbyl groups can be substantially omitted.

[0156] Without wishing to be bound by any particular theory, it can be postulated that the presence of at least one saturated hydrocarbon group in the second portion can promote the second portion to be oriented so that its terminal group can approach the exposed layer surface 11 of the patterned coating 110 due to the substantially low degree of rigidity of the saturated hydrocarbon group. In some non-limiting examples, it can be postulated that the presence of an unsaturated hydrocarbon group can inhibit the molecule from adopting such an orientation.

[0157] In some non-limiting examples, the patterned material 511 may include a material in which all F atoms are bonded to sp 3 In some non-limiting examples, the atomic ratio of F to C can be determined by counting all F atoms present in the compound structure and, for C atoms, counting only the sp atoms present therein. 3 In some non-limiting examples, the patterned material 511 may include a compound that may include, as a second portion thereof, a portion containing F and C, wherein the atomic ratio of F to C corresponds to an F / C quotient of at least about 1.5, 1.7, 2, 2.1, 2.3, and 2.5.

[0158] In some non-limiting examples, the second portion can include a siloxane group.

[0159] In some non-limiting examples, the compound may include a plurality of second portions. In some non-limiting examples, each of the plurality of second portions may include a proximal group bonded to at least one of the first portion and the third portion and a terminal group disposed distal to the proximal group.

[0160] In some non-limiting examples, the terminal groups may include CF 2 H group. In some non-limiting examples, the terminal group may include CF 3 In some non-limiting examples, the terminal group may include CH 2 CF 3 Group.

[0161] In some non-limiting examples, each of the plurality of second moieties may include at least one of a linear fluoroalkyl group and a linear fluoroalkoxy group.

[0162] In some non-limiting examples, at least one second portion can include a hydrophobic portion.

[0163] In some non-limiting examples, the third portion can be a linking group. In some non-limiting examples, the third portion can be a single bond, O, N, NH, C, CH, CH 2 and S.

[0164] In some non-limiting examples, the patterned material 511 may include a cyclophosphazene derivative represented by at least one of Formula (C-2) and Formula (C-3):

[0165]

[0166] in:

[0167] R each independently represents (including but not limited to) including the second part.

[0168] In some non-limiting examples, R may include a fluoroalkyl group. In some non-limiting examples, the fluoroalkyl group may be C 1 -C 18 Fluorinated alkyl. In some non-limiting examples, the fluoroalkyl group can be represented by formula (2):

[0169] *-(CH 2 ) t (CF 2 ) u Z (2)

[0170] in:

[0171] t represents an integer between 1 and 3;

[0172] u represents an integer between 5 and 12; and

[0173] Z represents at least one of hydrogen (H), deuterium (D) and F.

[0174] In some non-limiting examples, R can include a terminal group that is disposed distally from a corresponding phosphorus (P) atom to which R can be bonded.

[0175] In some non-limiting examples, R may include a third portion bonded to the second portion. In some non-limiting examples, the third portion of each R may be bonded to a corresponding P atom in at least one of Formula (C-2) and Formula (C-3).

[0176] In some non-limiting examples, the third portion can be an O atom.

[0177] In some non-limiting examples, the first portion may be spaced apart from the second portion.

[0178] In some non-limiting examples, patterning material 511 may include a variety of different materials.

[0179] In some non-limiting examples, the molecular structure of at least one of the materials of the patterned coating 110 (which may be at least one of the first material and the second material) may include a plurality of different monomers. In some non-limiting examples, such a molecular structure may include monomer species that differ in at least one of molecular composition and molecular structure. In some non-limiting examples, such a molecular structure may include a molecular structure represented by formulas (3) and (4):

[0180] (Mon A ) k (Mon B ) m (3)

[0181] (Mon A ) k (Mon B ) m (Mon C ) o (4)

[0182] in:

[0183] Mon A 、Mon B and Mon C Each represents a monomer type, and

[0184] k, m and o each represent an integer of at least 2.

[0185] In some non-limiting examples, k, m, and o each represent an integer of one of about 2-100, 2-50, 3-20, 3-15, 3-10, and 3-7. A person skilled in the relevant art will understand that various non-limiting examples and descriptions about the monomer Mon may be applicable to Mon A 、Mon B and Mon C Each of them.

[0186] In some non-limiting examples, the monomer may be represented by formula (5):

[0187] M-(LR x ) y (5)

[0188] in:

[0189] M represents the monomer main chain unit,

[0190] L represents a linking group,

[0191] R represents a functional group,

[0192] x is an integer between 1 and 4, and

[0193] y is an integer between 1 and 3.

[0194] In some non-limiting examples, the linking group can be a single bond, O, N, NH, C, CH, CH 2 At least one of and S represents. In some non-limiting examples, the linking group can be omitted so that the functional group can be directly bonded to the monomer backbone.

[0195] Various non-limiting examples of functional groups described herein may be applicable to R of formula (5). In some non-limiting examples, the functional group R may include an oligomer unit, and the oligomer unit may include a plurality of functional group monomer units. In some non-limiting examples, the functional group monomer unit may be CH 2 and CF 2 In some non-limiting examples, the functional group may include CH 2 CF 3 In some non-limiting examples, such functional group monomer units may be bonded together to form at least one of an alkyl and fluoroalkyl oligomer unit. In some non-limiting examples, the oligomer unit may include a functional group terminal unit. In some non-limiting examples, the functional group terminal unit may be arranged at the end of the oligomer unit and bonded to the functional group monomer unit. In some non-limiting examples, the end at which the functional group terminal unit may be arranged may correspond to a fragment of the functional group that may be away from the monomer main chain unit. In some non-limiting examples, the functional group terminal unit may include a CF 2 H and CF 3 At least one of .

[0196] In some non-limiting examples, the monomeric backbone unit M may have a high surface tension. In some non-limiting examples, the monomeric backbone unit may have a surface tension that is substantially at least the surface tension of at least one of the functional groups R bonded thereto. In some non-limiting examples, the monomeric backbone unit may have a surface tension that is substantially at least the surface tension of any functional group R bonded thereto.

[0197] In some non-limiting examples, the monomer backbone unit M may include P and N, including but not limited to phosphazene, wherein there is a double bond between P and N, and may be represented as at least one of "NP" and "N=P". In some non-limiting examples, the monomer backbone unit may include Si and O, including but not limited to silsesquioxane, which may be represented as SiO 3 / 2 .

[0198] In some non-limiting examples, at least a portion of the molecular structure of at least one of the materials of the patterned coating 110 (including but not limited to at least one of the first material and the second material) can be represented by formula (6):

[0199] (NP-(LR x ) y ) n (6)

[0200] in:

[0201] NP represents the main chain unit of phosphazene monomer,

[0202] L represents a linking group,

[0203] R represents a functional group,

[0204] x is an integer between 1 and 4,

[0205] y is an integer between 1 and 3, and

[0206] n is an integer of at least 2.

[0207] In some non-limiting examples, the molecular structure of at least one of the first material and the second material may be represented by formula (6). In some non-limiting examples, at least one of the first material and the second material may be cyclophosphazene. In some non-limiting examples, the molecular structure of cyclophosphazene may be represented by formula (6).

[0208] In some non-limiting examples, L may represent O, x may be 1, and R may represent a fluoroalkyl group. In some non-limiting examples, at least one fragment of the molecular structure of at least one material of the patterned coating 110 (including but not limited to at least one of the following) may be represented by Formula (7):

[0209] (NP(OR f ) 2 ) n (7)

[0210] in:

[0211] R f represents a fluoroalkyl group, and

[0212] n is an integer between 3 and 7.

[0213] In some non-limiting examples, the fluoroalkyl group may include CF 2 Group, CF 2 H group, CH 2 CF 3 Groups and CF 3 In some non-limiting examples, the fluoroalkyl group can be represented by formula (8):

[0214]

[0215] in:

[0216] p is an integer from 1 to 5;

[0217] q is an integer from 6 to 20; and

[0218] Z represents one of H and F.

[0219] In some non-limiting examples, p may be 1, and q may be an integer between 6 and 20.

[0220] In some non-limiting examples, the fluoroalkyl group R in formula (7) f It can be expressed by formula (8).

[0221] In some non-limiting examples, at least one fragment of the molecular structure of at least one material (including but not limited to at least one of the first material and the second material) of the patterned coating 110 can be represented by formula (9):

[0222] (SiO 3 / 2 -(LR)) n (9)

[0223] in:

[0224] L represents a linking group,

[0225] R represents a functional group, and

[0226] n is an integer between 6 and 12.

[0227] In some non-limiting examples, L may represent the presence of at least one of a single bond, O, a substituted alkyl group, and an unsubstituted alkyl group. In some non-limiting examples, n may be one of 8, 10, and 12. In some non-limiting examples, R may include a functional group having low surface tension. In some non-limiting examples, R may include at least one of a F-containing group and a Si-containing group. In some non-limiting examples, R may include at least one of a fluorocarbon group and a siloxane-containing group. In some non-limiting examples, R may include CF 2 Groups and CF 2In some non-limiting examples, R may include CF 2 and CF 3 In some non-limiting examples, R may include CH 2 CF 3 In some non-limiting examples, the material represented by formula (9) may be POSS, including but not limited to polyoctahedral silsesquioxane.

[0228] In some non-limiting examples, at least one fragment of the molecular structure of at least one material (including but not limited to at least one of the first material and the second material) of the patterned coating 110 can be represented by formula (10):

[0229] (SiO 3 / 2 -R f ) n (10)

[0230] in:

[0231] n is an integer from 6 to 12, and

[0232] R f represents a fluorinated alkyl group.

[0233] In some non-limiting examples, n may be one of 8, 10, and 12. In some non-limiting examples, R f In some non-limiting examples, R f Can include CF 2 Partial and CF 2 At least one of the H parts. In some non-limiting examples, R f Can include CF 2 and CF 3 In some non-limiting examples, R f Can include CH 2 CF 3 In some non-limiting examples, the material represented by formula (10) may be POSS.

[0234] In some non-limiting examples, the fluoroalkyl group R in formula (9) f It can be expressed by formula (8).

[0235] In some non-limiting examples, at least one fragment of the molecular structure of at least one material (including but not limited to at least one of the first material and the second material) of the patterned coating 110 can be represented by formula (11):

[0236] (SiO 3 / 2 -(CH 2 )x (CF 3 )) n (11)

[0237] in:

[0238] x is an integer between 1 and 5, and

[0239] n is an integer between 6 and 12.

[0240] In some non-limiting examples, n may be one of 8, 10, and 12.

[0241] In some non-limiting examples, the compound represented by formula (10) may be POSS.

[0242] In some non-limiting examples, the functional group R and the fluoroalkyl group R f At least one of may be independently selected at each occurrence of such a group in any of the foregoing formulas. One of ordinary skill in the relevant art will appreciate that any of the foregoing formulas may represent a substructure of a compound, and that at least one of additional groups and additional moieties may be present that is not explicitly shown in the above formula. One of ordinary skill in the relevant art will appreciate that each formula provided in the present application may represent at least one of a linear, branched, cyclic, cyclic-linear, and cross-linked structure.

[0243] Initial sticking probability

[0244] In some non-limiting examples, the initial adhesion probability of the patterned material 511 may be determined by depositing such material as at least one of a film and a coating in some form and having a sufficient thickness to mitigate / reduce any effect on the degree of molecular interaction with the underlying layer 810 when deposited on a surface, under similar circumstances as the deposition of the patterned coating 110 within the device 100. In some non-limiting examples, the initial adhesion probability may be measured on a film / coating having a thickness of at least about one of 20 nm, 25 nm, 30 nm, 50 nm, 60 nm, and 100 nm.

[0245] In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 511 (in some non-limiting examples, when deposited as some form of film and coating and under an environment similar to the deposition of the patterned coating 110 within the device 100) may have an initial adhesion probability for deposition of the deposited material 631 of no more than about 0.3, 0.2, 0.15, 0.1, 0.08, 0.05, 0.03, 0.02, 0.01, 0.008, 0.005, 0.003, 0.001, 0.0008, 0.0005, 0.0003, and 0.0001.

[0246] In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 511 (in some non-limiting examples, when deposited as at least one of a film and a coating in some form and under an environment similar to the deposition of the patterned coating 110 within the device 100) may have an initial adhesion probability for deposition of at least one of Ag and Mg of no more than about 0.3, 0.2, 0.15, 0.1, 0.08, 0.05, 0.03, 0.02, 0.01, 0.008, 0.005, 0.003, 0.001, 0.0008, 0.0005, 0.0003, and 0.0001.

[0247] In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 511 (in some non-limiting examples, when deposited as at least one of a film and a coating in some form and under an environment similar to the deposition of the patterned coating 110 within the device 100) may have a thickness of about 0.15-0.0001, 0.1-0.0003, 0.08-0.0005, 0.08-0.0008 , 0.05-0.001, 0.03-0.0001, 0.03-0.0003, 0.03-0.0005, 0.03-0.0008, 0.03-0.001, 0.03-0.005, 0.03-0.008, 0.03-0.01, 0.02-0.0001, 0.02-0.0003, 0.02-0.0005, 0.02-0.0 008, 0.02-0.001, 0.02-0.005, 0.02-0.008, 0.02-0.01, 0.01-0.0001, 0.01-0.0003, 0.01-0.0005, 0.01-0.0008, 0.01-0.001, 0.01-0.005, 0.01-0.008, 0.008-0.0001, 0.008- An initial adhesion probability for deposition of the deposition material 631 of one of 0.0003, 0.008-0.0005, 0.008-0.0008, 0.008-0.001, 0.008-0.005, 0.005-0.0001, 0.005-0.0003, 0.005-0.0005, 0.005-0.0008, and 0.005-0.001.

[0248] In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 511 (in some non-limiting examples, when deposited as at least one of a film and a coating in some form and under an environment similar to the deposition of the patterned coating 110 within the device 100) may have an initial adhesion probability for deposition of the plurality of deposited materials 531 that does not exceed a threshold value. In some non-limiting examples, such a threshold value may be one of approximately 0.5, 0.3, 0.2, 0.15, 0.1, 0.08, 0.05, 0.03, 0.02, 0.01, 0.008, 0.005, 0.003, 0.001, 0.0008, 0.0005, 0.0003, and 0.0001.

[0249] In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 511 (in some non-limiting examples, when deposited as at least one of a film and a coating in some form and under an environment similar to the deposition of the patterned coating 110 within the device 100) may have an initial adhesion probability for deposition of a plurality of deposited materials 531 selected from at least one of Ag, Mg, Yb, LiF, Cd, and Zn that does not exceed such a threshold. In some non-limiting examples, the patterned coating 110 may exhibit an initial adhesion probability for deposition of a plurality of deposited materials 531 selected from at least one of Ag, Mg, Yb, and LiF that does not exceed such a threshold.

[0250] In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 511 (in some non-limiting examples, when deposited as at least one of a film and a coating in some form and in an environment similar to the deposition of the patterned coating 110 in the device 100) may exhibit an initial adhesion probability for the deposition of the first deposition material 631, including equal to, but not limited to, below a first threshold, and an initial adhesion probability for the deposition of the second deposition material 631, including equal to, but not limited to, below a second threshold. In some non-limiting examples, the first deposition material 631 may be Ag and the second deposition material 631 may be Mg. In some non-limiting examples, the first deposition material 631 may be Ag and the second deposition material 631 may be Yb. In some non-limiting examples, the first deposition material 631 may be Yb and the second deposition material 631 may be Mg. In some non-limiting examples, the first threshold may be at least the second threshold.

[0251] In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 511 (in some non-limiting examples, when deposited as at least one of a film and a coating in some form and under an environment similar to the deposition of the patterned coating 110 within the device 100) may exhibit an initial adhesion probability for the deposition of the metal material not exceeding a metal threshold and an initial adhesion probability for the deposition of the metal fluoride material not exceeding a metal fluoride threshold. In some non-limiting examples, the metal material may be selected from one of: Ag, Yb, and Mg, and the metal fluoride material may be one of: LiF, cesium fluoride (CsF), potassium fluoride, rubidium fluoride, sodium fluoride, beryllium fluoride, magnesium fluoride, calcium fluoride, strontium fluoride, barium fluoride, scandium fluoride, neodymium fluoride, ytterbium fluoride; yttrium fluoride, erbium fluoride, lanthanum fluoride, samarium fluoride, terbium fluoride, and thulium fluoride. In some non-limiting examples, the metal fluoride threshold may be a threshold of at least the metal threshold.

[0252] In some non-limiting examples, there may be scenarios where it is desirable to provide a patterned coating 110 that causes formation of a discontinuous layer 160 of at least one particulate structure 150 when the patterned coating 110 is subjected to a vapor flux 632 of a deposition material 631. In some non-limiting examples, the patterned coating 110 may exhibit a substantially low initial sticking probability such that a closed coating 140 of the deposition material 631 may be formed in the second portion 102, which may be substantially free of the patterned coating 110, while a discontinuous layer 160 of at least one particulate structure 150 having at least one characteristic may be formed on the patterned coating 110 in the first portion 101. In some non-limiting examples, there may be a scenario where it is necessary to form a discontinuous layer 160 of at least one granular structure 150 of the deposition material 631 (which may be one of a metal and a metal alloy in some non-limiting examples) in the second portion 102 while depositing a sealing coating 140 of the deposition material 631 having a thickness of, for example, no more than about 100 nm, 50 nm, 25 nm, and 15 nm. In some non-limiting examples, the amount of the deposition material 631 deposited as the discontinuous layer 160 of at least one granular structure 150 in the first portion 101 may correspond to one of between about 1%-50%, 2%-25%, 5%-20%, and 7%-10% of the amount of the deposition material 631 deposited as the sealing coating 140 in the second portion 102, which in some non-limiting examples may correspond to a thickness of at least one of no more than about 100 nm, 75 nm, 50 nm, 25 nm, and 15 nm.

[0253] In some non-limiting examples, there may be a positive correlation between the initial adhesion probability for deposition of the deposited material 631 and the average layer thickness of the deposited material 631 thereon of at least one of the patterned coating 110 and the patterned material 511 (in some non-limiting examples, when deposited as at least one of a film and a coating in some form and in an environment similar to the deposition of the patterned coating 110 within the device 100).

[0254] Transmittance

[0255] In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 511 (in some non-limiting examples, when deposited as at least one of some form of film and coating and in an environment similar to deposition of the patterned coating 110 within the device 100) can have a transmittance to EM radiation of at least a threshold transmittance value after being subjected to a vapor flux 632 of a deposited material 631 including, but not limited to, Ag.

[0256] In some non-limiting examples, such transmittance may be measured under typical conditions that may be used to deposit an electrode of an optoelectronic device 300 (which, in some non-limiting examples, may be a cathode of an organic light emitting diode (OLED) device 300) after exposing an exposed layer surface 11 of at least one of a patterned coating 110 and a patterned material 511 formed as a thin film to a vapor flux 632 of a deposited material 631 (including, but not limited to, at least one of a metal and an alloy, including, but not limited to, Yb, Ag, Mg, and an Ag-containing material (including, but not limited to, MgAg)).

[0257] In some non-limiting examples, the conditions for subjecting the exposed layer surface 11 to the vapor flux 632 of the deposition material 631 (including but not limited to at least one of a metal and an alloy, including but not limited to at least one of Yb, Ag, Mg, and a Ag-containing material (including but not limited to MgAg)) may include: maintaining the vacuum pressure at a reference pressure, including but not limited to about 10 -4 Tohe 10 -5 The vapor flux 632 of the deposition material 631 (including but not limited to at least one of a metal and an alloy, including but not limited to at least one of Yb, Ag, Mg, and a Ag-containing material (including but not limited to MgAg)) is substantially consistent with the reference deposition rate, which includes but is not limited to about 1 angstrom. In some non-limiting examples, a QCM can be used to monitor; a vapor flux 632 of a deposition material 631 is directed toward the exposed layer surface 11 at an angle substantially close to perpendicular to the plane of the exposed layer surface 11; the exposed layer surface 11 is subjected to the vapor flux 632 of the deposition material 631 (including but not limited to at least one of a metal and an alloy, including but not limited to Yb, Ag, Mg, and at least one of an Ag-containing material (including but not limited to MgAg)) until a reference average layer thickness of but not limited to about 15 nm is reached; and when such a reference average layer thickness is reached, the exposed layer surface 11 is not further subjected to the vapor flux 632 of the deposition material 631 (including but not limited to at least one of a metal and an alloy, including but not limited to Yb, Ag, Mg, and at least one of an Ag-containing material (including but not limited to MgAg)).

[0258] In some non-limiting examples, the exposed layer surface 11 subjected to the vapor flux 632 of the deposition material 631 (including but not limited to at least one of Yb, Ag, Mg, and Ag-containing materials (including but not limited to MgAg)) may be substantially at room temperature (e.g., about 25° C.). In some non-limiting examples, the exposed layer surface 11 subjected to the vapor flux 632 of the deposition material 631 (including but not limited to at least one of metals and alloys, including but not limited to at least one of Yb, Ag, Mg, and Ag-containing materials (including but not limited to MgAg)) may be positioned about 65 cm away from the evaporation source through which the deposition material 631 (including but not limited to at least one of metals and alloys, including but not limited to at least one of Yb, Ag, Mg, and Ag-containing materials (including but not limited to MgAg)) is evaporated.

[0259] In some non-limiting examples, the threshold transmittance value may be measured at a wavelength in the visible spectrum that may be at least about one of 460 nm, 500 nm, 550 nm, and 600 nm. In some non-limiting examples, the threshold transmittance value may be measured at a wavelength in at least one of the IR and NIR spectra. In some non-limiting examples, the threshold transmittance value may be measured at a wavelength that is about one of 700 nm, 900 nm, and 1,000 nm. In some non-limiting examples, the threshold transmittance value may be expressed as a percentage of the incident EM power that may be transmitted through the sample. In some non-limiting examples, the threshold transmittance value may be at least about one of 60%, 65%, 70%, 75%, 80%, 85%, and 90%.

[0260] One of ordinary skill in the relevant art will appreciate that a high transmittance may generally indicate the absence of a closed coating 140 of a deposited material 631, including but not limited to at least one of Yb, Ag, Mg, and a material containing Ag, including but not limited to MgAg. On the other hand, a low transmittance may generally indicate the presence of a closed coating 140 of a deposited material 631, including but not limited to at least one of Yb, Ag, Mg, and a material containing Ag, including but not limited to MgAg, because a metal film, particularly when formed as a closed coating 140, may exhibit a high degree of absorption of EM radiation.

[0261] A series of samples were manufactured to measure the transmittance of the example material and visually observe whether a closed coating 140 of Ag was formed on the exposed layer surface 11 of the example material. The example material coating was deposited on the glass substrate 10 with a thickness of about 50 nm and then the exposed layer surface 11 of the coating was subjected to about Each sample was prepared by increasing the Ag vapor flux 632 at a rate until a reference layer thickness of about 15 nm was reached. Each sample was then visually analyzed and the transmittance through each sample was measured.

[0262] The molecular structures of the exemplary materials used in the samples herein are listed in Table 1:

[0263] Table 1

[0264]

[0265]

[0266]

[0267]

[0268] One of ordinary skill in the relevant art will appreciate that a sample having little to no deposited material 631 present thereon (including but not limited to at least one of a metal and an alloy, including but not limited to at least one of Yb, Ag, Mg, and a Ag-containing material (including but not limited to MgAg)) may be substantially transparent, whereas a sample having a large amount of at least one of a metal and an alloy deposited thereon (including but not limited to as a sealing coating 140) may exhibit significantly reduced transmittance in some non-limiting examples. Thus, the performance of various example coatings as patterned coating 110 may be evaluated by measuring transmittance through the sample, which transmittance may be inversely related to at least one of the amount of deposited material 631 deposited thereon and the average layer thickness, the deposited material including but not limited to at least one of a metal and an alloy, including but not limited to in the form of at least one of Yb, Ag, Mg, and a Ag-containing material (including but not limited to MgAg), because a thin film of metal (including but not limited to when formed as a sealing coating 140) may exhibit a high degree of absorption of EM radiation.

[0269] Samples in which a substantially closed coating 140 of deposited material 631 in the form of Ag had been formed were visually confirmed, and the presence of such a closed coating 140 in these samples was further confirmed by measuring the transmittance through the samples, which showed a transmittance of no more than about 50% at a wavelength of about 460 nm.

[0270] Additionally, for samples in which the absence of formation of a closed coating 140 of deposited material 631 (in the form of Ag) was confirmed, the absence of such a closed coating 140 in these samples was further confirmed by measuring EM transmittance therethrough, which showed a transmittance (of EM radiation at a wavelength of about 460 nm) of at least about 70%.

[0271] The results are summarized in Table 2:

[0272] Table 2

[0273]

[0274]

[0275] Based on the foregoing, it is found that the materials used in the first 7 samples (HT211 to Example Material 2) in Tables 1 and 2 and Example Material 9 and Example Material 15 may have reduced suitability in some scenarios for inhibiting the deposition of deposition material 631 thereon, the deposition material including but not limited to at least one of metals and alloys, including but not limited to at least one of Yb, Ag, Mg and Ag-containing materials (including but not limited to MgAg).

[0276] On the other hand, it is found that example materials 3 to 14 (except example material 9) may be suitable in some scenarios for acting as a patterned coating 110 for inhibiting deposition of a deposition material 631 thereon, the deposition material including but not limited to at least one of a metal and an alloy, including but not limited to at least one of Yb, Ag, Mg, and an Ag-containing material (including but not limited to MgAg).

[0277] Sedimentation contrast

[0278] In some non-limiting examples, materials (including but not limited to patterned material 511) that can be used as NICs for a given deposition material 631 (including but not limited to at least one of metals and alloys, including but not limited to at least one of Mg, Ag, and MgAg) can have a substantially high deposition contrast when deposited on substrate 10.

[0279] In some non-limiting examples, if the substrate 10 tends to act as a nucleation promoting coating (NPC) 820, and a portion thereof is coated with a material (including but not limited to a patterned material 511), which material may tend to act as a NIC that prevents deposition of a deposition material 631, which deposition material includes but is not limited to at least one of a metal and an alloy (including but not limited to at least one of Yb, Ag, Mg, and an Ag-containing material (including but not limited to MgAg)), then the coated portion (first portion 101) and the uncoated portion (second portion 102) may tend to have different initial adhesion probabilities and at least one of nucleation rates, so that the deposition material 631 deposited thereon may tend to have different average film thicknesses.

[0280] As used herein, in this scenario, the quotient of the average film thickness of the deposition material 631 deposited in the second portion 102 divided by the average film thickness of the deposition material 631 deposited in the first portion 101 may generally be referred to as a deposition (patterning) contrast. Therefore, if the deposition contrast is substantially high, the average film thickness of the deposition material 631 in the second portion 102 may be substantially greater than the average film thickness of the deposition material 631 in the first portion 101.

[0281] In some non-limiting examples, there may be a negative correlation between the initial sticking probability for deposition of the deposition material 631 and its deposition contrast in at least one of the patterned coating 110 and the patterned material 511 (in some non-limiting examples, when deposited as at least one of a film and a coating in some form and in an environment similar to the deposition of the patterned coating 110 within the device 100), i.e., a low initial sticking probability may be highly correlated with a high deposition contrast.

[0282] In some non-limiting examples, if the deposition contrast is substantially high, little or no deposition material 631 may be deposited in the first portion 101 while the deposition of deposition material 631 is sufficient to form its sealing coating 140 in the second portion 102 .

[0283] In some non-limiting examples, if the deposition contrast is substantially low, a discontinuous layer 160 of at least one particulate structure 150 of deposition material 631 deposited in first portion 101 may be present when deposition of deposition material 631 is sufficient to form seal coating 140 in second portion 102 .

[0284] In some non-limiting examples, materials having a substantially high deposition contrast relative to deposition of deposited material 631, including but not limited to patterned material 511, may have reduced suitability in some scenarios where reduced deposition contrast is desired, in some non-limiting examples where the average layer thickness of deposited material 631 in second portion 102 is substantially low, including but not limited to not more than at least one of approximately 100 nm, 50 nm, 25 nm, and 15 nm, including but not limited to in some scenarios where deposition of a discontinuous coating 160 of at least one granular structure 150 of the deposited material in first portion 101 is desired.

[0285] In some non-limiting examples, when the average layer thickness of the closed coating 140 of the deposited material 631 in the second portion 102 is substantially small (including but not limited to not more than one of approximately 100 nm, 50 nm, 25 nm and 15 nm, including but not limited to the formation of nanoparticles (NPs) in the first portion 101), there may be a scenario where a discontinuous layer 160 of at least one granular structure 150 of the deposited material 631 is required to be formed in the first portion 101, where such NPs are required to absorb EM radiation, including but not limited to protecting the underlying layer 810 from EM radiation having a wavelength not exceeding approximately 460 nm.

[0286] In some non-limiting examples, in such scenarios, a deposition contrast of one of between approximately 2-100, 4-50, 5-20, and 10-15 may be suitable.

[0287] In some non-limiting examples, materials having a substantially low deposition contrast relative to deposition of the deposited material 631 (including but not limited to patterned material 511) may have reduced suitability in some scenarios requiring a substantially high deposition contrast, including but not limited to scenarios where the average layer thickness of the deposited material 631 in the first portion 101 is large, including but not limited to at least about one of 95nm, 45nm, 20nm, 10nm and 8nm.

[0288] In some non-limiting examples, materials having a substantially low deposition contrast relative to deposition of the deposited material 631 (including but not limited to the patterned material 511) may have reduced suitability in some scenarios requiring a substantially high deposition contrast (including but not limited to scenarios requiring at least one of the closed coating 140 and the high-density particulate structure 150 to be substantially absent in the first portion 101, including but not limited to when the average layer thickness of the deposited material 631 in the second portion 102 is substantially high (including but not limited to at least one of about 95 nm, 45 nm, 20 nm, 10 nm, and 8 nm), including but not limited to some scenarios requiring substantially no absorption of EM radiation in at least one of the visible spectrum and the NIR spectrum (including but not limited to scenarios requiring increased transparency to EM radiation having a wavelength of at least about 460 nm).

[0289] In some non-limiting examples, when the average layer thickness of the closed coating 140 of the deposited material 631 in the second portion 102 is substantially high (including but not limited to at least one of about 95 nm, 45 nm, 20 nm, 10 nm, and 8 nm), a material (including but not limited to the patterned material 511) having a substantially low deposition contrast relative to the deposition of the deposited material 631 may have applicability in some scenarios where at least one of a discontinuous layer 160 and a low-density grain structure of the grain structure 150 of the deposited material 631 in the first portion 101 is desired. In some non-limiting examples, when the average layer thickness of the deposited material 631 in the second portion 102 is substantially high, including but not limited to at least one of about 95 nm, 45 nm, 20 nm, 10 nm, and 8 nm, a deposition contrast of one of between about 2-100, 4-50, 5-20, and 10-15 may have applicability in some scenarios.

[0290] In some non-limiting examples, if a material (including but not limited to patterned material 511) has a substantially high initial adhesion probability for deposition of at least one of metals and alloys (including but not limited to at least one of Mg, Ag, and MgAg), then such material may tend to have a substantially low deposition contrast.

[0291] Surface energy

[0292] In some non-limiting examples, as used herein with respect to a material, characteristic surface energy may generally refer to the surface energy measured from such material.

[0293] In some non-limiting examples, characteristic surface energy may be measured from a surface formed from a material deposited (coated) as a thin film.

[0294] In some non-limiting examples, the characteristic surface energy of a material (including but not limited to patterned material 511) in a coating (including but not limited to patterned coating 110) can be determined by depositing the material as a substantially pure coating (e.g., a coating formed from substantially pure material) on substrate 10 and measuring its contact angle with an applicable series of probe liquids.

[0295] Various methods and theories are known for determining the surface energy of solids.

[0296] In some non-limiting examples, the surface energy can be calculated (derived) based on a series of contact angle measurements, where various liquids can be brought into contact with a solid surface to measure the contact angle between the liquid-gas interface and the surface. In some non-limiting examples, the surface energy of the solid surface can be equal to the surface tension of the liquid with the highest surface tension that completely wets the surface.

[0297] In some non-limiting examples, the critical surface tension of a surface can be determined according to the Zisman method, as further described in WA Zisman, Advances in Chemistry 43 (1964), pp. 1-51.

[0298] In some non-limiting examples, a Zisman plot can be used to determine the contact angles that will result in complete wetting of the surface (i.e., a 0° contact angle θ c ) has the highest surface tension value.

[0299] In some non-limiting examples, when deposited as a thin film (coating) on ​​the exposed layer surface 11, the material (including but not limited to the patterned material 511, which may serve as the NIC of the deposited material 631 (including but not limited to at least one of metals and alloys, including but not limited to Mg, Ag, and at least one of Ag-containing materials (including but not limited to MgAg))) may tend to exhibit a substantially low surface energy.

[0300] In some non-limiting examples, a surface of at least one of the patterned coating 110 and the patterned material 511 (in some non-limiting examples, when deposited as at least one of a film and a coating in some form and under an environment similar to deposition of the patterned coating 110 within a device 100 comprising the compounds described herein) may exhibit a surface energy of no more than about 23 dynes / cm, 22 dynes / cm, 21 dynes / cm, 20 dynes / cm, 19 dynes / cm, 18 dynes / cm, 17 dynes / cm, 16 dynes / cm, 15 dynes / cm, 14 dynes / cm, 13 dynes / cm, 12 dynes / cm, 11 dynes / cm, and 10 dynes / cm.

[0301] In some non-limiting examples, the surface of at least one of the patterned coating 110 and the patterned material 511 (in some non-limiting examples, when deposited as at least one of a film and a coating in some form and under an environment similar to the deposition of the patterned coating 110 within the device 100 comprising the compounds described herein) can exhibit a surface energy of at least about one of 6 dynes / cm, 7 dynes / cm, 8 dynes / cm, 9 dynes / cm, 10 dynes / cm, 12 dynes / cm, and 13 dynes / cm.

[0302] In some non-limiting examples, the surface of at least one of the patterned coating 110 and the patterned material 511 (in some non-limiting examples, when deposited as at least one of a film and a coating in some form and under an environment similar to the deposition of the patterned coating 110 within the device 100 comprising the compounds described herein) can exhibit a surface energy of one of between approximately 10 dynes / cm-22 dynes / cm, 13 dynes / cm-22 dynes / cm, 15 dynes / cm-20 dynes / cm, and 17 dynes / cm-20 dynes / cm.

[0303] In some non-limiting examples, there may be scenarios where it is desirable to have a patterned material 511 with a substantially low surface energy that is not excessively low, including but not limited to approximately 10 dynes / cm - 22 dynes / cm.

[0304] Materials suitable for providing patterned coating 110 may generally have low surface energy when deposited as a thin film (coating) on ​​a surface. In some non-limiting examples, materials having low surface energy may exhibit low intermolecular forces.

[0305] Without wishing to be bound by any particular theory, it may be hypothesized that, in some non-limiting examples, materials having substantially high surface energies (including but not limited to patterned material 511) may have suitability for use in at least some applications requiring substantially high temperature reliability.

[0306] In some non-limiting examples, when the average layer thickness of the closed coating 140 of the deposited material 631 in the second portion 102 is substantially low (including but not limited to not more than one of approximately 100 nm, 50 nm, 25 nm and 15 nm), a material having a substantially high surface energy (including but not limited to the patterned material 511) of the NIC that can be used as the deposited material 631 (including but not limited to at least one of metals and alloys, including but not limited to Yb, Mg, Ag and Ag-containing materials (including but not limited to MgAg)) may be applicable in some scenarios where a discontinuous layer 160 of the granular structure 150 of the deposited material 631 in the first portion 101 is required.

[0307] Without wishing to be bound by any particular theory, the inventors have discovered that a patterned coating 110 comprising a material that exhibits a substantially high surface energy when deposited as a thin film can, in some non-limiting examples, form a discontinuous layer 160 of at least one granular structure 150 of the deposited material 631 in the first portion 101 and form a closed coating 140 of the deposited material 631 in the second portion 102, including but not limited to, when the average layer thickness of the closed coating 140 is (including but not limited to) no more than one of approximately 100 nm, 75 nm, 50 nm, 25 nm and 15 nm.

[0308] In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 511 (in some non-limiting examples, when deposited as at least one of a film and a coating in some form and under an environment similar to the deposition of the patterned coating 110 within a device) may have a contact angle of no more than about one of 15°C, 10°C, 8°C, and 5°C relative to a polar solvent (including but not limited to water).

[0309] In some non-limiting examples, a series of samples were made to measure the critical surface tension of surfaces formed from various materials. The measurement results are summarized in Table 3:

[0310] Table 3

[0311] Material Critical surface tension (dyne / cm) HT211 25.6 HT01 >24 TAZ 22.4 Balq 25.9 Liq 24 Sample material 1 26.3 Sample material 2 24.8 Sample material 3 20 Sample material 4 12.4 Sample material 5 15.9 Sample material 6 21.1 Sample material 7 13.1 Sample material 8 21 Sample material 9 18.9 Sample material 10 16 Sample material 11 13 Sample material 12 13 Sample material 13 18.5 Sample material 14 22 Sample material 15 19.4

[0312] Based on the aforementioned measurements of critical surface tension in Table 3 and previous observations regarding one of the substantially closed coatings 140 in the presence and absence of the deposited material 631 in the form of Ag, it was discovered that materials that form a substantially low surface energy surface when deposited as a coating (including but not limited to the patterned coating 110) (in some non-limiting examples, materials having a critical surface tension between approximately 12 dynes / cm and 22 dynes / cm) may be suitable for forming a patterned coating 110 to inhibit deposition of at least one of the deposited material 631 (including but not limited to Yb, Ag, Mg, metal fluorides (including but not limited to LiF), and Ag-containing materials (including but not limited to MgAg)) thereon.

[0313] Without wishing to be bound by any particular theory, it may be hypothesized that materials forming exposed layer surface 11 having a surface energy (in some non-limiting examples) not exceeding one of approximately 13 dynes / cm, 14 dynes / cm, and 15 dynes / cm may have reduced suitability as patterning material 511 in some scenarios because such materials may exhibit at least one of substantially low adhesion to layers surrounding such materials, a low melting point, and a low sublimation temperature.

[0314] In some non-limiting examples, when deposited as a thin film (coating) on ​​the exposed layer surface 11, the material (including but not limited to the patterned material 511, which may tend to act as the NIC of the deposited material 631 (including but not limited to at least one of metals and alloys, including but not limited to at least one of Mg, Ag and Ag-containing materials (including but not limited to MgAg))) may tend to exhibit a substantially low surface energy.

[0315] In some non-limiting examples, materials (including but not limited to patterned material 511 ) may tend to exhibit substantially low surface energy when deposited as a thin film (coating) on ​​exposed layer surface 11 .

[0316] In some non-limiting examples, materials having substantially low surface energy, including but not limited to patterned material 511 , may tend to exhibit substantially low intermolecular forces.

[0317] In some non-limiting examples, there may be scenarios where it is desirable to have a patterned material 511 with a substantially low surface energy that is not excessively low.

[0318] In some non-limiting examples, materials having substantially high surface energies, including but not limited to patterned material 511, may be suitable for use in some scenarios where optical techniques are used to detect films of such materials.

[0319] Without wishing to be bound by any particular theory, it may be hypothesized that, in some non-limiting examples, materials having substantially high surface energy (including but not limited to patterned material 511) may have suitability for some scenarios requiring substantially high temperature reliability.

[0320] In some non-limiting examples, materials having substantially low but not excessively low surface energy (including but not limited to patterned material 511) may have applicability in some scenarios requiring significant reliability under at least one of shear and bending stresses, including but not limited to devices fabricated on a flexible substrate 10.

[0321] In some non-limiting examples, when the average layer thickness of the closed coating 140 of the deposited material 631 in the second portion 102 is substantially high (including but not limited to at least about one of 95 nm, 45 nm, 20 nm, 10 nm and 8 nm), a material with a substantially low surface energy (which can be used as the NIC of the deposited material 631, including but not limited to the patterned material 511, the deposited material including but not limited to at least one of a metal and an alloy, including but not limited to at least one of Yb, Ag, Mg and Ag-containing materials (including but not limited to MgAg)) may be applicable in some scenarios where one of a discontinuous layer 160 of the granular structure 150 of the deposited material 631 in the first portion 101 and a low-density granular structure is required.

[0322] In some non-limiting examples, in various non-limiting examples, surface values ​​herein may correspond to such values ​​measured at about normal temperature and pressure (NTP), which may correspond to a temperature of 20° C. and an absolute pressure of 1 atm.

[0323] Thermal properties

[0324] Glass transition temperature

[0325] In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 511 (in some non-limiting examples, when deposited as at least one of a film and a coating in some form and under an environment similar to the deposition of the patterned coating 110 within the device 100) may have a glass transition temperature that is one of: at least about one of 300°C, 200°C, 170°C, 150°C, 130°C, 120°C, 110°C, and 100°C, and no more than about one of 20°C, 0°C, -20°C, -30°C, and -50°C.

[0326] It can be assumed that, in some non-limiting examples, patterned material 511 that does not undergo a glass transition within what may be considered a typical operating temperature range for consumer electronic devices (including but not limited to approximately 20°C-80°C), in some non-limiting examples, may have applicability in some scenarios because such patterned material 511 may promote enhanced stability of such devices.

[0327] Sublimation temperature

[0328] In some non-limiting examples, the sublimation temperature of the patterning material 511 in high vacuum may be one of about 100° C.-320° C., 120° C.-300° C., 140° C.-280° C., or 150° C.-250° C. In some non-limiting examples, such a sublimation temperature may allow the patterning material 511 to be substantially easily deposited as a coating using PVD.

[0329] In some non-limiting examples, materials having substantially low sublimation temperatures, including but not limited to patterned material 511 , may have reduced suitability for manufacturing processes that may require substantially precise control of the average layer thickness of sealant coating 140 of deposited material 631 .

[0330] In some non-limiting examples, materials having substantially low intermolecular forces, including but not limited to patterned material 511 , may tend to exhibit substantially low sublimation temperatures.

[0331] In some non-limiting examples, materials (including but not limited to patterned material 511) having a sublimation temperature not exceeding one of approximately 140°C, 120°C, 110°C, 100°C, and 90°C may tend to encounter constraints on at least one of the deposition rate and average layer thickness of a film including such materials that can be deposited using known deposition methods (including but not limited to vacuum thermal evaporation).

[0332] In some non-limiting examples, materials having substantially high sublimation temperatures, including but not limited to patterned material 511 , may be suitable for use in some scenarios that require substantially high precision in controlling the average layer thickness of films including such materials.

[0333] In some non-limiting examples, materials (including but not limited to patterned material 511) having a sublimation temperature not exceeding one of approximately 140°C, 120°C, 110°C, 100°C, and 90°C may tend to encounter constraints on at least one of the deposition rate and average layer thickness of a film including such materials that can be deposited using known deposition methods (including but not limited to vacuum thermal evaporation).

[0334] In some non-limiting examples, materials having substantially high sublimation temperatures, including but not limited to patterned material 511 , may be suitable for use in some scenarios that require substantially high precision in controlling the average layer thickness of films including such materials.

[0335] In some non-limiting examples, materials having a sublimation temperature of at least about one of 350°C, 400°C, and 500°C (including but not limited to patterned material 511) may tend to encounter constraints on the ability to process such materials for deposition as thin films in certain tool configurations, including but not limited to, using vacuum thermal evaporation, due to their substantially high sublimation temperatures.

[0336] In some non-limiting examples, the sublimation temperature of the patterning material 511 in high vacuum may be one of about 100° C.-320° C., 120° C.-300° C., 140° C.-280° C., or 150° C.-250° C. In some non-limiting examples, such a sublimation temperature may allow the patterning material 511 to be substantially easily deposited as a coating using PVD.

[0337] The sublimation temperature of a material (including but not limited to patterned material 511) can be determined using various methods apparent to one of ordinary skill in the relevant art, including but not limited to by evaporating the material in a substantially high vacuum environment in an evaporation source (in some non-limiting examples, at about 10 -4 The method includes heating the material in an evaporation source (crucible) and determining the temperature that can be reached to perform at least one of the following:

[0338] Observe when material begins to deposit onto the exposed layer surface 11 on the QCM mounted at a fixed distance from the evaporation source;

[0339] Observe the specific deposition rate on the exposed layer surface 11 on the QCM mounted at a fixed distance from the evaporation source, in some non-limiting examples, as well as

[0340] Reaching a threshold vapor pressure of the material, which in some non-limiting examples is about 10 -4 Tohe 10 -5 One of the trustees.

[0341] In some non-limiting examples, to determine the sublimation temperature, the QCM may be mounted approximately 65 cm from the evaporation source.

[0342] In some non-limiting examples, the patterned material 511 may have a sublimation temperature of approximately one of 100°C-320°C, 100°C-300°C, 120°C-300°C, 100°C-250°C, 140°C-280°C, 120°C-230°C, 130°C-220°C, 140°C-210°C, 140°C-200°C, 150°C-250°C, and 140°C-190°C.

[0343] Melting point

[0344] In some non-limiting examples, materials including but not limited to patterning material 511 may have a melting temperature of at least about one of 100°C, 120°C, 140°C, 160°C, 180°C, and 200°C.

[0345] In some non-limiting examples, materials having substantially low intermolecular forces, including but not limited to patterning material 511 , may tend to exhibit substantially low melting points.

[0346] In some non-limiting examples, materials having substantially low melting points (including but not limited to patterned material 511) may have reduced suitability in some scenarios requiring significant temperature reliability for temperatures not exceeding one of approximately 60°C, 80°C, and 100°C, due to changes in the physical properties of such materials at operating temperatures close to the melting point, in some non-limiting examples.

[0347] In some non-limiting examples, materials having a melting point of about 120° C. may have reduced suitability in some scenarios requiring substantially high temperature reliability (including but not limited to at least about 100° C.).

[0348] In some non-limiting examples, materials having substantially high melting points (including but not limited to patterning material 511 ) may have applicability in some scenarios requiring substantially high temperature reliability.

[0349] In some non-limiting examples, the melting points of selected example materials were measured using differential scanning calorimetry. Specifically, the melting point of each sample was determined during the second heating cycle at a heating rate of 10°C / min. The measurement results are summarized in Table 4:

[0350] Table 4

[0351] Material Melting point(℃) HT-211 170℃ HT-01 210℃ Sample material 1 320℃ Sample material 3 >300℃ Sample material 4 95℃ Sample material 6 <25℃ Sample material 8 220℃ Sample material 9 <25℃ Sample material 10 150℃ Sample material 11 110℃ Sample material 12 93℃ Sample material 14 236℃ Sample material 15 210℃

[0352] Cohesive energy

[0353] According to Young's equation (Equation 13), the cohesive energy (fracture toughness / cohesive strength) of a material may tend to be proportional to its surface energy (see Young, Thomas (1805) "An essay on the cohesion of fluids", Philosophical Transactions of the Royal Society of London, 95:65-87).

[0354] According to Lindemann's criterion, the cohesive energy of a material may tend to be proportional to its melting temperature (see Nanda, KK, Sahu, SN and Behera, SN (2002), "Liquid-drop model for the size-dependent melting of low-dimensional systems" Phys. Rev. A. 66(1):013208).

[0355] In some non-limiting examples, materials having substantially low intermolecular forces, including but not limited to patterned material 511 , may tend to exhibit substantially low cohesive energy.

[0356] In some non-limiting examples, materials having substantially low cohesive energy (including but not limited to patterned material 511) may have reduced suitability in some scenarios requiring significant fracture toughness (including but not limited to devices 100 that may tend to be subjected to at least one of shear and bending stresses during at least one of manufacturing and use) because such materials may tend to crack (break) in such scenarios. In some non-limiting examples, materials having cohesive energy of no more than about 30 dynes / cm (including but not limited to patterned material 511) may have reduced suitability in some scenarios of devices 100 manufactured on flexible substrate 10.

[0357] In some non-limiting examples, materials having substantially high cohesive energy (including but not limited to patterned material 511 ) may be suitable for some scenarios requiring substantially high reliability under at least one of shear stress and bending stress, including but not limited to devices 100 fabricated on flexible substrates 10 .

[0358] In some non-limiting examples, a series of samples are manufactured to determine the failure point when one of them is peeled off and delaminated. Specifically, each sample is manufactured by depositing a layer of each example material used as a patterned coating 110 of about 50nm thickness on a glass substrate 10, followed by depositing a layer of an organic material of about 50nm thickness that is generally used as a capping layer (CPL). Then the tape is applied to the exposed layer surface 11 of the CPL of each sample. The tape is peeled off to cause delamination (cohesive failure) of each sample, and the peeled tape and the delaminated sample are analyzed to determine at which interface with the adjacent layer thereof the failure occurs. Samples that fail within the patterned coating 110 or at the interface between the patterned coating 110 and the adjacent layer are identified as failing the delamination test, and samples that fail within the CPL (i.e., cohesive failure within the CPL) are identified as passing the delamination test. The results are shown in Table 5:

[0359] Table 5

[0360] Material Pass / fail based on failure point Sample material 4 Failed Sample material 8 pass Sample material 10 Failed Sample material 11 Failed Sample material 12 Failed Sample material 13 Failed Sample material 14 Failed

[0361] Based on the foregoing analysis of the delamination tests and previous observations regarding the melting points and critical surface tensions of the example materials, it was found that samples fabricated with a patterned coating 110 including example material 8 as patterned material 511 (which exhibits at least the melting point and critical surface tension of example materials 10 and 11) showed damage occurring within the CPL as the CPL separated to form a new surface, while samples fabricated with a patterned coating 110 including example materials 10 and 11 as patterned material 511, respectively, showed damage occurring within the patterned coating 110 as the patterned coating 110 separated to form a new surface.

[0362] Without wishing to be bound by any particular theory, it can be assumed that this is because when the patterned material 511 includes the example material 8, the cohesive energy of the CPL is not higher than the cohesive energy of the patterned coating 110 and the adhesive energy at the interface between the patterned coating 110 and the CPL. In contrast, for such samples, each patterned coating 110 formed of the patterned material 511 including one of the example material 4, the example material 10, the example material 11, the example material 12, the example material 13, and the example material 14 exhibits a cohesive energy that does not exceed both the cohesive energy of the CPL and the adhesive energy at the interface between the patterned coating 110 and the CPL, so that delamination caused by cohesive failure occurs in two samples within the patterned coating 110.

[0363] Optical / Band Gap

[0364] In the present disclosure, semiconductor materials may be described as materials that generally exhibit a band gap. In some non-limiting examples, the band gap may be formed between the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) of the semiconductor material. The semiconductor material may therefore tend to exhibit a conductivity that is substantially no greater than that of a conductive material (including but not limited to at least one of a metal and an alloy), but substantially at least that of an insulating material (including but not limited to glass). In some non-limiting examples, the semiconductor material may include an organic semiconductor material. In some non-limiting examples, the semiconductor material may include an inorganic semiconductor material.

[0365] In some non-limiting examples, the optical band gap of a material, including but not limited to patterned material 511, may tend to correspond to the HOMO-LUMO energy gap of the material.

[0366] In some non-limiting examples, materials having a substantially large / wide optical (HOMO-LUMO band gap) (including but not limited to patterned material 511) may tend to exhibit substantially weak, including but not limited to substantially no, photoluminescence in at least one of the deep blue region of the visible spectrum, the near UV spectrum, the visible spectrum, and the NIR spectrum.

[0367] In some non-limiting examples, materials having a substantially small HOMO-LUMO energy gap may have applicability in some scenarios where optical techniques are used to detect films of the material.

[0368] In some non-limiting examples, the optical bandgap of the patterned material 511 can be broader than the photon energy of the EM radiation emitted by the source, such that the patterned material 511 does not undergo photoexcitation when subjected to such EM radiation.

[0369] Refractive index / extinction coefficient

[0370] In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 511 (in some non-limiting examples, when deposited as at least one of some form of film and coating and under an environment similar to the deposition of the patterned coating 110 within the device 100) may have a low refractive index.

[0371] In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 511 (in some non-limiting examples, when deposited as at least one of some form of film and coating and under an environment similar to the deposition of the patterned coating 110 within the device 100) may have a refractive index of no more than about one of 1.55, 1.5, 1.45, 1.43, 1.4, 1.39, 1.37, 1.35, 1.32, and 1.3 for EM radiation of a wavelength of 550 nm.

[0372] In some non-limiting examples, the refractive index of the patterned coating 110 may not exceed about 1.7. In some non-limiting examples, the refractive index of the patterned coating 110 may not exceed one of about 1.6, 1.5, 1.4, and 1.3. In some non-limiting examples, the refractive index of the patterned coating 110 may be one of about 1.2-1.6, 1.2-1.5, and 1.25-1.45. As further described in various non-limiting examples above, the patterned coating 110 exhibiting a substantially low refractive index may be suitable in some scenarios for enhancing at least one of (including but not limited to) the optical properties and performance of the device 100 by enhancing the external coupling of EM radiation emitted by the optoelectronic device 300.

[0373] Without wishing to be bound by any particular theory, it has been observed that providing a patterned coating 110 having a substantially low refractive index can (at least in some devices 100) increase the transmittance of external EM radiation through the second portion 102 thereof. In some non-limiting examples, when the patterned coating 110 has a substantially low refractive index, a device 100 including an air gap therein (which can be disposed proximate the patterned coating 110) can exhibit substantially high transmittance relative to a similarly constructed device 100 in which such a low refractive index patterned coating 110 is not provided.

[0374] In some non-limiting examples, a series of samples were made to measure the refractive index of coatings formed from some of the various example materials at a wavelength of 550 nm. The measurement results are summarized in Table 6:

[0375] Table 6

[0376] Material Refractive Index HT211 1.76 HT01 1.80 TAZ 1.69 Balq 1.69 Liq 1.64 Sample material 2 1.72 Sample material 3 1.37 Sample material 5 1.38 Sample material 7 1.3 Sample material 8 1.37

[0377] Based on the aforementioned measurements of refractive index in Table 6, and previous observations in Table 6 regarding one of the substantially closed coatings 140 with and without Ag, it was found that the material forming the substantially low refractive index coating (in some non-limiting examples, a material having a refractive index not exceeding one of approximately 1.4 and 1.38) may have applicability in some scenarios of forming a patterned coating 110 to substantially inhibit deposition of a deposited material 631 (including but not limited to at least one of a metal and an alloy, including but not limited to at least one of Yb, Ag, Mg, and an Ag-containing material (including but not limited to MgAg)) thereon.

[0378] In some non-limiting examples, the patterned coating 110 can be at least one of substantially transparent and EM radiation transmissive.

[0379] In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 511 (in some non-limiting examples, when deposited as at least one of a film and a coating in some form and under an environment similar to the deposition of the patterned coating 110 within the device 100) may have an extinction coefficient of no more than about 0.01 for photons at a wavelength of at least about one of 600 nm, 500 nm, 460 nm, 420 nm, and 410 nm.

[0380] In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 511 (in some non-limiting examples, when deposited as at least one of a film and a coating in some form and under an environment similar to the deposition of the patterned coating 110 within the device 100) can have an extinction coefficient that can be at least about 0.05, 0.1, 0.2, and 0.5 for EM radiation at a wavelength of not more than one of about 400 nm, 390 nm, 380 nm, and 370 nm.

[0381] In this manner, at least one of the patterned coating 110 and the patterned material 511 (when deposited as at least one of a film and a coating in some form and under an environment similar to the deposition of the patterned coating 110 within the device 100) can absorb EM radiation in the UVA spectrum incident on the device 100, thereby reducing the likelihood that the EM radiation in the UVA spectrum may impart constraints on at least one of device performance, device stability, device reliability, and device lifetime.

[0382] In some non-limiting examples, the patterned coating 110 can exhibit an extinction coefficient in the visible spectrum of no more than about one of 0.1, 0.08, 0.05, 0.03, and 0.01.

[0383] Photoluminescence / absorption / other optical effects

[0384] In some non-limiting examples, a coating (including but not limited to patterned coating 110) may exhibit photoluminescence including but not limited to by including a material that exhibits photoluminescence.

[0385] In some non-limiting examples, photoluminescence of at least one of: a coating (including but not limited to patterned coating 110) and a material that may constitute the coating (including but not limited to patterned material 511) may be observed through a photoexcitation process, wherein at least one of the coating and the material may be subjected to EM radiation emitted by a source (including but not limited to a UV lamp).

[0386] When the emitted EM radiation is absorbed by at least one of the coating and the material, the electrons of the at least one of the coating and the material may be temporarily excited. After the excitation, one or more relaxation processes may occur, including but not limited to at least one of fluorescence and phosphorescence, wherein EM radiation may be emitted from at least one of the coating and the material.

[0387] EM radiation emitted from at least one of the coating and the material during this process may be detected, including but not limited to, by a photodetector to characterize the photoluminescent properties of at least one of the coating and the material.

[0388] As used herein, the wavelength of photoluminescence associated with at least one of a coating and a material may generally refer to the wavelength of EM radiation emitted by at least one of such coating and material due to relaxation of electrons from an excited state. As will be understood by one of ordinary skill in the relevant art, the wavelength of EM radiation emitted by at least one of the coating and the material due to a photoexcitation process may, in some non-limiting examples, be longer than the wavelength of the EM radiation used to initiate the photoexcitation. Photoluminescence may be detected using various techniques known in the art, including, but not limited to, fluorescence microscopy.

[0389] A common wavelength for radiation sources used in fluorescence microscopy is about 365 nm. Therefore, the presence of materials (including but not limited to patterned material 511) having substantially weak photoluminescence and absorption (including but not limited to substantially no photoluminescence and absorption) at a wavelength of at least about 365 nm, particularly when deposited (including but not limited to deposited as a thin film), may have reduced applicability in some scenarios where typical optical detection techniques (including but not limited to fluorescence microscopy) are required. This may impose constraints on some scenarios where such materials may be selectively deposited on portions of substrate 10 (including but not limited to) by FMM, as there may be some scenarios for determining the presence of portions of such materials after material deposition.

[0390] As used herein, at least one of a photoluminescent coating and a material may be at least one of a coating and a material that exhibits photoluminescence at a certain wavelength when irradiated with excitation radiation of a certain wavelength. In some non-limiting examples, at least one of a photoluminescent coating and a material may exhibit photoluminescence at a wavelength exceeding about 365 nm when irradiated with excitation radiation having a wavelength of 365 nm, which is the wavelength of a radiation source often used in fluorescence microscopy.

[0391] In some non-limiting examples, the optical band gaps of various coatings / materials may correspond to the energy gap of the coating / material from which one of absorbs and emits EM radiation during the photoexcitation process.

[0392] In some non-limiting examples, photoluminescence can be detected by subjecting the coating / material to EM radiation having a wavelength corresponding to the UV spectrum, including but not limited to one of UVA and UVB. In some non-limiting examples, the EM radiation used to induce photoexcitation can have a wavelength of about 365 nm.

[0393] In some non-limiting examples, patterned material 511 may exhibit substantially no one of photoluminescence and absorption at any wavelength corresponding to the visible spectrum.

[0394] In some non-limiting examples, patterned material 511 can exhibit one of negligible (including but not limited to undetectable) photoluminescence and absorption when subjected to EM radiation having a wavelength of at least about one of 300 nm, 320 nm, 350 nm, and 365 nm.

[0395] In some non-limiting examples, patterned material 511 may exhibit negligible (including, but not limited to, undetectable) absorption when subjected to such EM radiation.

[0396] In some non-limiting examples, coatings (including but not limited to patterned coating 110) including materials (including but not limited to patterned material 511) having substantially weak to no photoluminescence and absorption within a wavelength range of at least about one of 365 nm and 460 nm may tend not to act as one of a photoluminescent coating and an absorbing coating, and may have applicability in some scenarios requiring substantially high transparency within at least one of the visible spectrum and the NIR spectrum.

[0397] In some non-limiting examples, the coating (including but not limited to the patterned coating 110) may exhibit photoluminescence at a wavelength corresponding to at least one of the UV spectrum and the visible spectrum, including but not limited to by including a material that exhibits photoluminescence. In some non-limiting examples, the photoluminescence may occur at a wavelength (range) corresponding to the UV spectrum (including but not limited to one of the UVA spectrum and the UVB spectrum). In some non-limiting examples, the photoluminescence may occur at a wavelength (range) corresponding to the visible spectrum. In some non-limiting examples, the photoluminescence may occur at a wavelength (range) corresponding to one of the deep blue and near UV.

[0398] The photoluminescent at least one of the coating and the material may be detected on the substrate 10 using conventional characterization techniques, including but not limited to standard optical techniques, including but not limited to fluorescence microscopy, which may determine the presence of the at least one of the coating and the material when the patterned coating 110 is deposited.

[0399] In some non-limiting examples, at least one of the materials of the patterned coating 110 that can exhibit photoluminescence can include at least one of a conjugated bond, an aromatic moiety, an electron donating-electron withdrawing group, and a heavy metal complex.

[0400] In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 511 (when deposited as at least one of some form of a film and a coating and under an environment similar to the deposition of the patterned coating 110 within the device 100) may not substantially attenuate EM radiation passing therethrough in at least one of the visible spectrum, the IR spectrum, and the NIR spectrum.

[0401] In some non-limiting examples, the patterned coating 110 can function as an optical coating.

[0402] In some non-limiting examples, the patterned coating 110 may modify at least one of at least one property and at least one characteristic of EM radiation (including, but not limited to, in the form of photons) emitted by the device 100. In some non-limiting examples, the patterned coating 110 may exhibit a degree of haze, thereby causing the emitted EM radiation to be scattered. In some non-limiting examples, the patterned coating 110 may include a crystalline material for causing EM radiation transmitted therethrough to be scattered. In some non-limiting examples, such scattering of EM radiation may be beneficial for enhancing external coupling of EM radiation from the device 100. In some non-limiting examples, the patterned coating 110 may initially be deposited as a substantially non-crystalline (including, but not limited to, substantially amorphous) coating, whereupon, after its deposition, the patterned coating 110 may become crystalline and thereafter serve as optical coupling.

[0403] Average layer thickness

[0404] In some non-limiting examples, the average layer thickness of the patterned coating 110 may be no more than about one of 10 nm, 8 nm, 7 nm, 6 nm, and 5 nm.

[0405] weight

[0406] In some non-limiting examples, the molecular weight of the compound of the at least one patterning material 511 may be no more than about one of 6,000 g / mol, 5,500 g / mol, 5,000 g / mol, 4,500 g / mol, 4,300 g / mol, and 4,000 g / mol.

[0407] In some non-limiting examples, the molecular weight of the compound of patterning material 511 may be at least about one of 800 g / mol, 1,000 g / mol, 1,200 g / mol, 1,300 g / mol, 1500 g / mol, 1,700 g / mol, 2,000 g / mol, 2,200 g / mol, and 2,500 g / mol.

[0408] In some non-limiting examples, the molecular weight of the compound of patterning material 511 may be one of approximately 800 g / mol-5000 g / mol, 800 g / mol-4000 g / mol, 800 g / mol-3,000 g / mol, 900 g / mol-2,000 g / mol, 900 g / mol-1,800 g / mol, and 900 g / mol-1,600 g / mol.

[0409] Without wishing to be bound by any particular theory, it may be hypothesized that for compounds suitable for forming surfaces having substantially low surface energy, there may be scenarios where it is desired, in at least some applications, that such compounds have a molecular weight of one of between approximately 800 g / mol-3,000 g / mol, 900 g / mol-2,000 g / mol, 900 g / mol-1,800 g / mol, and 900 g / mol-1,600 g / mol.

[0410] Correlation between patterned coating properties

[0411] Initial adhesion probability-transmittance

[0412] Without wishing to be bound by any particular theory, it may be postulated that an exposed layer surface 11 exhibiting a low initial adhesion probability relative to the deposited material 631 (including but not limited to at least one of a metal and an alloy, including but not limited to Yb, Ag, Mg, and a material containing Ag (including but not limited to MgAg)) may exhibit high transmittance. Without wishing to be bound by any particular theory, it may be postulated that an exposed layer surface 11 exhibiting a high adhesion probability relative to the deposited material 631 (including but not limited to at least one of a metal and an alloy, including but not limited to Yb, Ag, Mg, and a material containing Ag (including but not limited to MgAg)) may exhibit low transmittance.

[0413] Initial adhesion probability-deposition contrast

[0414] In some non-limiting examples, if the initial adhesion probability of a material (including but not limited to patterned material 511) to the deposition of a deposited material 631 (including but not limited to at least one of metals and alloys, including but not limited to at least one of Yb, Ag, Mg, and Ag-containing materials (including but not limited to MgAg)) is substantially high, then such material may tend to have a substantially low deposition contrast.

[0415] Initial adhesion probability-surface energy

[0416] In some non-limiting examples, materials including but not limited to patterned material 511 may tend to have a substantially high initial adhesion probability relative to deposition of deposition material 631 if the material has a substantially high surface energy, the deposition material including but not limited to at least one of a metal and an alloy, including but not limited to at least one of Yb, Ag, Mg, and Ag-containing materials (including but not limited to MgAg).

[0417] Transmittance-Refractive Index

[0418] Without wishing to be bound by any particular theory, it has been observed that, at least in some devices 100, providing a patterned coating 110 having a substantially low refractive index can enhance the transmission of external EM radiation through the second portion 102 thereof, including but not limited to devices 100 including an air gap that can be disposed near or adjacent to the patterned coating 110, which can exhibit a substantially high transmittance when the patterned coating 110 has a substantially low refractive index relative to similarly configured devices 100 in which such a low refractive index patterned coating 110 is not provided.

[0419] Surface Energy-Melting Point

[0420] In some non-limiting examples, a patterned coating 110 having a substantially low surface energy and a substantially high melting point may have applicability in some scenarios where high temperature reliability is required. In some non-limiting examples, achieving such a combination from a single material may be challenging, given that, in some non-limiting examples, a single material having a low surface energy may tend to exhibit a low melting point.

[0421] In some non-limiting examples, patterning material 511 having a substantially low surface tension that is not excessively low may have applicability in some scenarios where a substantially high melting point is desired, including but not limited to approximately 15 dynes / cm-22 dynes / cm.

[0422] Without wishing to be bound by any particular theory, it may be hypothesized that materials forming an exposed layer surface 11 having a surface energy (in some non-limiting examples) not exceeding at least one of approximately 13 dynes / cm, 14 dynes / cm, and 15 dynes / cm may have reduced suitability as patterning material 511 in some scenarios because such materials may tend to exhibit at least one of substantially low adhesion to layers surrounding such materials, a substantially low melting point, and a substantially low sublimation temperature.

[0423] Surface energy-sublimation temperature

[0424] In some non-limiting examples, materials having substantially low but not excessively low surface tension (including but not limited to patterned material 511) may be suitable for use in some scenarios requiring substantially high sublimation temperatures, including but not limited to approximately 15 dynes / cm-22 dynes / cm.

[0425] In some non-limiting examples, coatings (including but not limited to patterned coatings 110, which include materials having substantially low surface energy and substantially high sublimation temperatures (including but not limited to patterned material 511)) may have applicability in some scenarios where substantially high precision is required when controlling the average layer thickness of films including such materials.

[0426] Without wishing to be bound by any particular theory, it may be hypothesized that materials forming an exposed layer surface 11 having a surface energy (in some non-limiting examples) not exceeding one of approximately 13 dynes / cm, 14 dynes / cm, and 15 dynes / cm may have reduced suitability as patterning material 511 in some scenarios because such materials may tend to exhibit at least one of substantially low adhesion to layers surrounding such materials, a substantially low melting point, and a substantially low sublimation temperature.

[0427] Surface energy-cohesive energy

[0428] In some non-limiting examples, materials having substantially low surface energy and substantially high cohesive energy (including but not limited to patterned material 511) may have applicability in some scenarios requiring substantially high reliability under at least one of shear stress and bending stress. In some non-limiting examples, achieving such a combination from a single material may be challenging, given that, in some non-limiting examples, a film substantially formed of a single material having substantially low surface energy may tend to exhibit substantially low cohesive energy.

[0429] Surface energy-melting point-cohesive energy

[0430] In some non-limiting examples, coatings having substantially low surface energy, substantially high melting points, and substantially high cohesive energies (including but not limited to patterned coating 110) may be suitable for use in some scenarios requiring substantially high reliability under various conditions. In some non-limiting examples, achieving such a combination from a single material may be challenging, given that, in some non-limiting examples, a film substantially formed of a single material having substantially low surface energy may tend to exhibit substantially low cohesive energy and substantially low melting points.

[0431] Surface energy - melting point - sublimation temperature - cohesive energy

[0432] Without wishing to be bound by any particular theory, it may be hypothesized that materials that form surfaces having surface energies (in some non-limiting examples) not exceeding approximately 13 dynes / cm, 15 dynes / cm, and 17 dynes / cm may, in some non-limiting examples, be less suitable as patterning material 511 because such materials may tend to exhibit at least one of: substantially poor adhesion to layers surrounding such material, substantially poor cohesive strength, a low melting point, and a low sublimation temperature.

[0433] Surface energy-optical band gap

[0434] In some non-limiting examples, materials having substantially low surface energy, including but not limited to patterned material 511, may tend to exhibit an optical bandgap that is at least one of substantially large and substantially wide.

[0435] Surface Energy-Photoluminescence

[0436] In some non-limiting examples, materials having substantially low surface energy (including but not limited to patterned material 511) may be suitable for use in some scenarios where weak, including but not limited to substantially no, photoluminescence and absorption are required within a wavelength range of at least about one of 365 nm and 460 nm.

[0437] Surface energy-melting point-sublimation temperature-molecular weight

[0438] Without wishing to be bound by any particular theory, it has been observed that compounds having substantially low surface energy and also having a molecular weight of no more than about 1,000 g / mol may tend to exhibit at least one of the following properties: (i) a substantially low sublimation temperature, not limited to no more than about 100°C; and (ii) a substantially low melting point, not limited to no more than one of about 100°C and 80°C, such that such compounds may have reduced suitability in certain scenarios.

[0439] Surface energy-melting point-cohesive energy

[0440] In some non-limiting examples, materials having substantially low surface energy (including but not limited to patterned material 511) may tend to exhibit substantially low intermolecular forces, which may increase the likelihood that patterned material 511 has at least one of a substantially low melting point, cohesive strength, and adhesive strength relative to layers adjacent thereto.

[0441] Surface energy-molecular weight (-melting point)

[0442] Without wishing to be bound by any particular theory, it can be hypothesized that for compounds suitable for forming surfaces having substantially low surface energy, there may be scenarios where it is desired, in at least some applications, that such compounds have a molecular weight of one of between about 1,200 g / mol-6,000 g / mol, 1,500 g / mol-5,500 g / mol, 1,500 g / mol-5,000 g / mol, 2,000 g / mol-4,500 g / mol, 2,300 g / mol-4,300 g / mol, 2,500 g / mol-4,000 g / mol, 1,500 g / mol-4,500 g / mol, 1,700 g / mol-4,500 g / mol, 2,000 g / mol-4,000 g / mol, 2,200 g / mol-4,000 g / mol, and 2,500 g / mol-3,800 g / mol.

[0443] Without wishing to be bound by any particular theory, it can be hypothesized that such compounds may exhibit at least one property that may be suitable in some scenarios for forming one of the coatings and layers having at least one of the following: (i) a substantially high melting point, including but not limited to at least 100°C, (ii) a substantially low surface energy, and (iii) a substantially amorphous structure, including but not limited to when deposited using a vacuum-based thermal evaporation process.

[0444] Surface energy-composition

[0445] The surface tension attributable to a portion of the molecular structure (including but not limited to at least one of the first portion, the second portion, the monomer, the monomer backbone unit, the linking group, and the functional group) can be determined using various methods known in the art, including but not limited to the use of isotonic specific volume, such as can be further described in "Conception and Significance of the Parachor", Nature 196:890-891. In some non-limiting examples, such methods may include determining the critical surface tension of the portion according to equation (12):

[0446]

[0447] in:

[0448] γ represents the critical surface tension of the part;

[0449] P represents the isotonic volume of the part; and

[0450] V m Indicates the molar volume of a portion.

[0451] In some non-limiting examples, the monomer backbone may have a surface tension that is at least the surface tension of at least one of the functional groups bonded thereto. In some non-limiting examples, the monomer backbone may have a surface tension that is at least the surface tension of any functional group bonded thereto.

[0452] In some non-limiting examples, the monomer backbone units can have a surface tension of one of at least about 25 dynes / cm, 30 dynes / cm, 40 dynes / cm, 50 dynes / cm, 75 dynes / cm, 100 dynes / cm, 150 dynes / cm, 200 dynes / cm, 250 dynes / cm, 500 dynes / cm, 1,000 dynes / cm, 1,500 dynes / cm, and 2,000 dynes / cm.

[0453] In some non-limiting examples, at least one functional group of the monomer may have a surface tension of one of: no more than about 25 dynes / cm, 21 dynes / cm, 20 dynes / cm, 19 dynes / cm, 18 dynes / cm, 17 dynes / cm, 16 dynes / cm, 15 dynes / cm, 14 dynes / cm, 13 dynes / cm, 12 dynes / cm, 11 dynes / cm, and 10 dynes / cm.

[0454] In some non-limiting examples, a first portion of the molecules of the patterned material 511 may have a critical surface tension that is at least the critical surface tension of a second portion thereof coupled to the first portion, such that the first portion may include an increased critical surface tension component and the second portion may include a decreased critical surface tension component.

[0455] In some non-limiting examples, the quotient of the critical surface tension of the first portion divided by the critical surface tension of the second portion may be at least about one of 5, 7, 8, 9, 10, 12, 15, 18, 20, 30, 50, 60, 80, and 100.

[0456] In some non-limiting examples, the critical surface tension of the first portion can exceed the critical surface tension of the second portion by at least about one of 50 dynes / cm, 70 dynes / cm, 80 dynes / cm, 100 dynes / cm, 150 dynes / cm, 200 dynes / cm, 250 dynes / cm, 300 dynes / cm, 350 dynes / cm, and 500 dynes / cm.

[0457] In some non-limiting examples, the critical surface tension of the first portion can be at least about one of 50 dynes / cm, 70 dynes / cm, 80 dynes / cm, 100 dynes / cm, 150 dynes / cm, 180 dynes / cm, 200 dynes / cm, 250 dynes / cm, and 300 dynes / cm.

[0458] In some non-limiting examples, the critical surface tension of the second portion can be no more than about one of 25 dynes / cm, 21 dynes / cm, 20 dynes / cm, 19 dynes / cm, 18 dynes / cm, 17 dynes / cm, 16 dynes / cm, 15 dynes / cm, 14 dynes / cm, 13 dynes / cm, 12 dynes / cm, 11 dynes / cm, and 10 dynes / cm.

[0459] Optical bandgap-photoluminescence

[0460] In some non-limiting examples, materials having a substantially large HOMO-LUMO energy gap may have applicability in some scenarios requiring weak, including but not limited to substantially no, one of photoluminescence and absorption within a wavelength range of at least about one of 365 nm and 460 nm.

[0461] Molecular weight-composition

[0462] In some non-limiting examples, the percentage of the molar weight of such a compound attributable to the presence of F atoms may be one of about 40%-90%, 45%-85%, 50%-80%, 55%-75%, and 60%-75%. In some non-limiting examples, F atoms may account for the majority of the molar weight of such a compound.

[0463] In some non-limiting examples, the molecular weight attributable to the first portion can be at least about one of 50 g / mol, 60 g / mol, 70 g / mol, 80 g / mol, 100 g / mol, 120 g / mol, 150 g / mol, and 200 g / mol.

[0464] In some non-limiting examples, the molecular weight attributable to the first portion can be no more than about one of 500 g / mol, 400 g / mol, 350 g / mol, 300 g / mol, 250 g / mol, 200 g / mol, 180 g / mol, and 150 g / mol.

[0465] In some non-limiting examples, the sum of the molecular weights of each of the at least one second portion in the compound structure may be at least about one of 1,200 g / mol, 1,500 g / mol, 1,700 g / mol, 2,000 g / mol, 2,500 g / mol, and 3,000 g / mol.

[0466] Various patterning materials

[0467] In some non-limiting examples, a patterned coating 110 of a single patterned material 511 is formed relative to the deposition of a deposited material 631, the deposited material including but not limited to at least one of a given metal and alloy, including but not limited to at least one of Yb, Ag, Mg, metal fluorides (including but not limited to LiF) and Ag-containing materials (including but not limited to MgAg), which satisfies constraints on multiple material properties selected from at least one of the following: initial adhesion probability, transmittance, deposition contrast, surface energy, glass transition temperature, melting point, sublimation temperature, evaporation temperature, cohesive energy, optical band gap, photoluminescence, refractive index, extinction coefficient, another optical effect (including but not limited to absorption), average layer thickness, molecular weight and composition, which may pose challenges for a given scenario given the substantially complex interrelationships between the various material properties.

[0468] In some non-limiting examples, the patterned coating 110 may include a plurality of patterned materials 511 .

[0469] In some non-limiting examples, at least one of the plurality of patterned materials 511 may function as a NIC when deposited as a thin film. In some non-limiting examples, more than one of the plurality of patterned materials 511 may function as a NIC when deposited as a thin film. In some non-limiting examples, at least one of the plurality of patterned materials 511 may not function as a NIC. In some non-limiting examples, such at least one of the plurality of patterned materials 511 that does not function as a NIC when deposited as a thin film may form an NPC 820 ( FIG. 8 ).

[0470] In some non-limiting examples, patterned coating 110 may include a first material and a second material.

[0471] In some non-limiting examples, at least one of the first material and the second material may include a molecule including at least one of a cage structure, a ring structure, and an organic-inorganic hybrid structure.

[0472] In some non-limiting examples, the first material can include a fully condensed oligomer, ie, the molecular structure of the first material can be substantially free of any partially condensed moieties, including but not limited to uncondensed moieties.

[0473] In some non-limiting examples, the first material may form the NPC 820 when deposited as a thin film, and the second material may form the NIC when deposited as a thin film.

[0474] In some non-limiting examples, employing multiple patterned materials 511 that each satisfy a different combination of constraints on at least one material property may be advantageous in achieving a desired combination of characteristics of the patterned coating 110, including but not limited to at least one of the following:

[0475] High pattern contrast,

[0476] Low tendency to crystallize in the form of thin films,

[0477] Low risk of cohesive failure and / or delamination in the form of a film,

[0478] The patterned coating 110 exhibits a photoluminescent response, and

[0479] Forming at least one particle structure 160 on the exposed layer surface 11 of the patterned coating 110 .

[0480] Host-Dopant

[0481] In some non-limiting examples, the first material can be a host material (host). In some non-limiting examples, the second material can be a dopant material (dopant).

[0482] As used herein, when used in conjunction with the patterned coating 110, a body (including but not limited to this) may generally refer to a material component that may include a majority of the entire patterned coating 110. In some non-limiting examples, when measured by at least one of weight and volume, the body may include at least about 99%, 95%, 90%, 80%, 70%, and one of 50% of the entire patterned coating 110, including but not limited to this. In some non-limiting examples, the patterned coating 110 may include at least three materials that are different from each other. In such non-limiting examples, the material that constitutes the largest portion (by at least one of weight and volume) of the patterned coating 110 may be considered the body. In some non-limiting examples, the patterned coating 110 may include multiple bodies.

[0483] As used herein, a dopant, including but not limited to, when used in conjunction with the patterned coating 110, may generally refer to a material component that may include less than a majority of the total material. In some non-limiting examples, the dopant may include at least one of no more than about 1%, 5%, 10%, 20%, 30%, and 50% of the total material when measured by at least one of weight and volume, including but not limited to.

[0484] In some non-limiting examples, the characteristic surface energy of the host can be substantially at least the characteristic surface energy of the dopant. In some non-limiting examples, each of the host and the dopant can have a characteristic surface energy between about 5 dynes / cm-25 dynes / cm.

[0485] In some non-limiting examples, at least one of the host and the dopant can be adapted to form a surface having a low surface energy when deposited as a thin film.

[0486] In some non-limiting examples, the melting point of the host may be substantially at least the melting point of the dopant. In some non-limiting examples, each of the host and the dopant may have a melting point of at least about one of 100°C, 110°C, 120°C, and 130°C.

[0487] In some non-limiting examples, at least one of the host and the dopant can be an oligomer.

[0488] In some non-limiting examples, at least one of at least one combination of at least one material property and at least one value of at least one material property can be different for the host than for the dopant. In some non-limiting examples, at least one of at least one combination of at least one material property and at least one value of at least one material property can be different for the patterned coating 110 than for at least one of the host and the dopant.

[0489] In some non-limiting examples, the patterned coating 110 including the host and the dopant may fall into one of a variety of categories, including but not limited to:

[0490] · Category 1 , wherein the host and the dopant are characterized by at least one substantially similar material property including, but not limited to, at least one of: initial adhesion probability, transmittance, deposition contrast, surface energy, glass transition temperature, melting point, sublimation temperature, evaporation temperature, cohesive energy, optical band gap, photoluminescence, refractive index, extinction coefficient, average layer thickness, molecular weight, composition, and another optical effect (including, but not limited to, absorption);

[0491] · Category 2 , wherein the host and the dopant are characterized by at least one substantially different material property including, but not limited to, at least one of: initial adhesion probability, transmittance, deposition contrast, surface energy, glass transition temperature, melting point, sublimation temperature, evaporation temperature, cohesive energy, optical band gap, photoluminescence, refractive index, extinction coefficient, average layer thickness, molecular weight, composition, and another optical effect (including, but not limited to, absorption);

[0492] · Category 3 , wherein the dopant exhibits a photoluminescent response; and

[0493] · Category 4 , wherein a dopant is introduced to produce at least one foreign substance, thereby promoting the formation of at least one grain structure 160 thereon.

[0494] One of ordinary skill in the relevant art will appreciate that, in some non-limiting examples, there may be specific combinations of hosts and dopants that may fall into more than one of these categories.

[0495] One of ordinary skill in the relevant art will understand that the similarity of at least one material property between the host and the dopant may include, but is not limited to, one of equality, similarity, and proximity within (a range of) values.

[0496] In some non-limiting examples, the range of values ​​in which the material properties of the host and the dopant exhibit similarity can vary depending on the context, including but not limited to at least one of the following: the material property to which the range applies, the application to which the patterned coating 110 applies, and at least one of the type, quantity, and similarity and dissimilarity of at least one material property other than the material property to which at least one of the values ​​and ranges applies.

[0497] One of ordinary skill in the relevant art will appreciate that the difference in at least one material property between the host and the dopant may include, but is not limited to, a difference in value (range of values).

[0498] In some non-limiting examples, the range of values ​​in which the material properties of the host and the dopant differ to exhibit dissimilarity may vary depending on the context, including but not limited to at least one of the following: the material property to which the range applies, the application to which the patterned coating 110 applies, and at least one of the type, quantity, and similarity and dissimilarity of at least one material property other than the material property to which at least one of the values ​​and ranges applies.

[0499] In some non-limiting examples, the subject may be a non-polymeric material. In some non-limiting examples, it has been found that the use of polymers as subjects may have reduced applicability in at least some scenarios. Without wishing to be bound by any particular theory, it can be assumed that, in at least some scenarios, polymers generally have reduced applicability as subjects in patterned coatings 110 because polymers have substantially low free volumes compared to oligomers and small molecules, including but not limited to this. This low free volume of polymers may introduce constraints on the material of patterned coatings 110, the construction of which will be used as a patterned coating 110 exhibiting at least one of substantially low surface energy and substantially high cohesive energy. Polymers may also have reduced applicability in at least some scenarios because they generally exhibit substantially low solubility in common solvents, and they generally tend not to sublime under typical conditions used in manufacturing processes (including but not limited to vacuum-based deposition processes) for semiconductor devices (including but not limited to OLEDs).

[0500] In some non-limiting examples, the body can be a hydrophilic material. In some non-limiting examples, the body (in some non-limiting examples, when deposited as at least one of a film and a coating in some form and in an environment similar to the deposition of the patterned coating 110 within the device 100) can have a contact angle of no more than about one of 15°, 10°, 8°, and 5° with respect to a polar solvent (including but not limited to water). Without wishing to be bound by any particular theory, it can be assumed that a hydrophilic body may have applicability in at least some scenarios.

[0501] Deposition of patterned coatings

[0502] In some non-limiting examples, the patterned coating 110 may be deposited in the first portion 101 of the exposed layer surface 11 of the underlying layer 810 by providing a mixture comprising a plurality of materials and depositing such mixture thereon to form the patterned coating 110 thereon. In some non-limiting examples, the mixture may include a host and a dopant. In some non-limiting examples, the host and the dopant may be deposited in the first portion 101 of the exposed layer surface 11 of the underlying layer 810 to form the patterned coating 110 thereon.

[0503] In some non-limiting examples, the mixture may be deposited by a PVD process in the first portion 101 of the exposed layer surface 11 of the underlying layer 810. In some non-limiting examples, the patterned coating 110 may be formed by evaporating the mixture from a common evaporation source and depositing the mixture in the first portion 101 of the exposed layer surface 11 of the underlying layer 810.

[0504] In some non-limiting examples, a mixture including but not limited to a host and a dopant may be placed in a common evaporation source to be heated under vacuum until its evaporation temperature is reached, and the resulting evaporation flux 512 ( Figure 5 ) is directed to the exposed layer surface 11 of the underlying layer 810 within the first portion 101 so that the patterned coating 110 is deposited thereon and therein.

[0505] In some non-limiting examples, the patterned coating 110 may be deposited by co-evaporation of a host and a dopant. In some non-limiting examples, the host may be evaporated from a first evaporation source and the dopant may be evaporated from a second evaporation source such that a mixture is formed in a gas phase and co-deposited on the exposed layer surface 11 of the underlying layer 810 in the first portion 101 to provide the patterned coating 110 thereon.

[0506] In some non-limiting examples, the patterned coating 110 may be formed by providing a single patterned material (supplied patterned material) 511 on the exposed layer surface 11 of the underlying layer 810 prior to its deposition. s (including but not limited to one of the host and the dopant) to deposit. In some non-limiting examples, the supplied patterned material 511 is provided s Thereafter, the supplied patterning material 511 may be processed s To produce the patterned material 511 g , including but not limited to another of the host and the dopant. In some non-limiting examples, in the patterning material 511 supplied s Producing the generated patterned material 511 g Thereafter, the supplied patterning material 511 s and the resulting patterned material 511 g The patterned coating 110 may be deposited on the exposed layer surface 11 of the underlying surface 120 .

[0507] In some non-limiting examples, the resulting patterned material 511 g The supplied patterning material 511 may be heated s The supplied patterning material 511 s In some non-limiting examples, the supplied patterned material 511 is heated in an environment including but not limited to a vacuum environment.s May cause the supplied patterned material 511 s A portion of the chemical reaction occurs to form the patterned material 511 g .

[0508] In some non-limiting examples, the supplied patterning material 511 may be heated in a vacuum. s , and then depositing the host and dopant by a PVD process to form a patterned coating 110 on the exposed layer surface 11 of the lower surface 120, thereby in-situ generating the resulting patterned material 511 g .

[0509] In some non-limiting examples, in the resulting patterned material 511 g This vacuum may not be interrupted between the creation of and the deposition of the patterned coating 110 .

[0510] In some non-limiting examples, the patterned coating 110 can include a third patterned material 511. In some non-limiting examples, such a third material can be produced by processing at least one of a host and a dopant.

[0511] Category 1: Host and dopant are similar

[0512] Without wishing to be bound by any particular theory, it can be postulated that, in some non-limiting examples, producing a patterned coating 110 from a host and a dopant having similar material properties may have applicability in some scenarios because the likelihood of the host and the dopant being miscible with each other may be increased and the likelihood of separation into different phases may be reduced. In some non-limiting examples, this may have applicability in scenarios where the patterned coating 110 is required to resist crystallization because the material properties of the dopant may tend to disrupt the formation of a crystalline structure in the host.

[0513] In some non-limiting examples, similar material properties of both the host and the dopant may be at least one of: surface energy, melting point, sublimation temperature, refractive index, molecular weight, and composition, including but not limited to the composition of a portion of the molecular structure of the host and the dopant.

[0514] Sedimentation contrast

[0515] In some non-limiting examples, the body can exhibit a substantially high deposition contrast.

[0516] In some non-limiting examples, the dopant may exhibit a substantially high deposition contrast.

[0517] In some non-limiting examples, the dopant may exhibit a substantially low deposition contrast.

[0518] Surface energy

[0519] In some non-limiting examples, the characteristic surface energy of at least one of the host and the dopant can be no more than about one of 25 dynes / cm, 24 dynes / cm, 22 dynes / cm, 21 dynes / cm, 20 dynes / cm, 19 dynes / cm, 18 dynes / cm, 17 dynes / cm, 16 dynes / cm, 15 dynes / cm, 14 dynes / cm, 13 dynes / cm, 12 dynes / cm, 11 dynes / cm, and 10 dynes / cm.

[0520] In some non-limiting examples, the characteristic surface energy of each of the host and the dopant can be no more than about one of 25 dynes / cm, 24 dynes / cm, 22 dynes / cm, 21 dynes / cm, 20 dynes / cm, 19 dynes / cm, 18 dynes / cm, 17 dynes / cm, 16 dynes / cm, 15 dynes / cm, 14 dynes / cm, 13 dynes / cm, 12 dynes / cm, 11 dynes / cm and 10 dynes / cm.

[0521] In some non-limiting examples, the characteristic surface energy of at least one of the host and the dopant can be at least about one of 6 dynes / cm, 7 dynes / cm, 8 dynes / cm, 9 dynes / cm, 10 dynes / cm, 12 dynes / cm, and 13 dynes / cm.

[0522] In some non-limiting examples, the characteristic surface energy of at least one of the host and the dopant can be one of between approximately 10 dynes / cm-22 dynes / cm, 13 dynes / cm-22 dynes / cm, 15 dynes / cm-20 dynes / cm, and 17 dynes / cm-20 dynes / cm.

[0523] In some non-limiting examples, the absolute value of the difference between the characteristic surface energy of the body and the characteristic surface energy of the dopant can be no more than about one of 1 dyne / cm, 2 dynes / cm, 3 dynes / cm, 4 dynes / cm, 5 dynes / cm, 7 dynes / cm, and 10 dynes / cm.

[0524] Without wishing to be bound by any particular theory, it may be hypothesized that selecting a plurality of patterned materials 511 having substantially small differences between their characteristic surface energies may be useful in some scenarios because the likelihood of such patterned materials being miscible with each other may be increased and the likelihood of separation into different phases may be reduced.

[0525] Glass transition temperature

[0526] In some non-limiting examples, at least one of the host and the dopant may have a glass transition temperature that is one of: (i) at least about one of 300°C, 150°C, and 130°C, and (ii) not more than about one of 20°C, 0°C, -30°C, and -50°C.

[0527] Melting point

[0528] In some non-limiting examples, at least one of the host and the dopant may have a melting point of at least about one of 100° C., 110° C., 120° C., and 130° C. In some non-limiting examples, each of the host and the dopant may have a melting point of at least about one of 100° C., 110° C., 120° C., and 130° C.

[0529] In some non-limiting examples, the absolute value of the difference between the melting point of the host and the melting point of the dopant may not exceed one of approximately 50°C, 40°C, 35°C, 30°C, 20°C.

[0530] Sublimation temperature

[0531] In some non-limiting examples, at least one of the host and the dopant may have a sublimation temperature of one of between approximately 100°C-300°C, 120°C-300°C, 140°C-280°C, and 150°C-250°C.

[0532] In some non-limiting examples, the absolute value of the difference between the sublimation temperature of the host and the sublimation temperature of the dopant may be no more than about one of 5°C, 10°C, 15°C, 20°C, 30°C, 40°C, and 50°C.

[0533] Evaporation temperature

[0534] In some non-limiting examples, the host and dopant may have evaporation temperatures that may be substantially similar. Without wishing to be bound by any particular theory, it may be hypothesized that such similarities may have applicability in scenarios where co-deposition of the host and dopant may be expected.

[0535] Photoluminescence

[0536] In some non-limiting examples, the patterned material 511 (including but not limited to at least one of a host and a dopant) may exhibit at least one of substantially weak (including but not limited to substantially no) photoluminescence and absorption within a wavelength range of at least about one of 365 nm and 460 nm, and may therefore tend not to act as a coating that is one of a photoluminescent coating or an absorptive coating, and may have applicability in some scenarios requiring substantially high transparency in at least one of the visible spectrum and the NIR spectrum.

[0537] Refractive Index

[0538] In some non-limiting examples, at least one of the host and the dopant may exhibit a refractive index of no more than about one of 1.55, 1.5, 1.45, 1.44, 1.43, 1.42, 1.41, 1.4, 1.39, 1.37, 1.35, 1.32, and 1.3 for EM radiation having a wavelength of about 550 nm.

[0539] In some non-limiting examples, both the host and the dopant may exhibit a refractive index of no more than about one of 1.55, 1.5, 1.45, 1.44, 1.43, 1.42, 1.41, 1.4, 1.39, 1.37, 1.35, 1.32, and 1.3 for EM radiation having a wavelength of about 550 nm.

[0540] Extinction coefficient

[0541] In some non-limiting examples, at least one of the host and the dopant can exhibit an extinction coefficient of no more than about 0.01 for EM radiation having a wavelength of at least about one of 600 nm, 500 nm, 460 nm, 420 nm, and 410 nm.

[0542] weight

[0543] In some non-limiting examples, the molecular weight of each of the plurality of materials of the patterned coating 110 (including but not limited to the host and the dopant) may be at least about one of 750 g / mol, 1,000 g / mol, 1,500 g / mol, 2,000 g / mol, 2,500 g / mol, and 3,000 g / mol.

[0544] In some non-limiting examples, the molecular weight of a compound of at least one patterning material 511 (including but not limited to at least one of a host and a dopant) may be no more than about one of 5,000 g / mol, 4,500 g / mol, 4,000 g / mol, 3,800 g / mol, and 3,500 g / mol.

[0545] In some non-limiting examples, the molecular weight of a compound of at least one patterning material 511 (including but not limited to at least one of a host and a dopant) may be at least about one of 1,000 g / mol, 1,200 g / mol, 1,500 g / mol, 1,700 g / mol, 2,000 g / mol, 2,200 g / mol, and 2,500 g / mol.

[0546] In some non-limiting examples, the molecular weight of the compound of at least one patterning material 511 (including but not limited to at least one of the host and the dopant) can be one of approximately 1,500 g / mol-5,000 g / mol, 1,500 g / mol-4,500 g / mol, 1,700 g / mol-4,500 g / mol, 2,000 g / mol-4,000 g / mol, 2,200 g / mol-4,000 g / mol and 2,500 g / mol-3,800 g / mol.

[0547] Tanimoto coefficient

[0548] In some non-limiting examples, the Tanimoto coefficient between the host and the dopant may be at least about one of 0.65, 0.7, 0.75, 0.8, 0.85, 0.9, and 0.95.

[0549] Without wishing to be bound by any particular theory, it may be hypothesized that combinations of hosts and dopants having relatively high similarities (including, but not limited to, as determined by the Tanimoto coefficient) may have applicability in some scenarios due to the improved ability to process materials to form a patterned coating 110 comprising such combinations of hosts and dopants.

[0550] In some non-limiting examples, the Tanimoto coefficient between the host and the dopant may be 1. In some non-limiting examples, certain oligomers composed of the same monomer but with different numbers of monomer units may have a Tanimoto coefficient of 1 despite the different numbers of monomer units that make them up.

[0551] composition

[0552] In some non-limiting examples, both the host and the dopant can be patterned material 511 .

[0553] In some non-limiting examples, at least one of the host and the dopant of the patterned coating 110 can be an oligomer. In some non-limiting examples, each of the host and the dopant can be an oligomer. In some non-limiting examples, the host can include a first oligomer, and the dopant can include a second oligomer. In some non-limiting examples, each of the first oligomer and the second oligomer can contain at least one monomer together.

[0554] In some non-limiting examples, the monomers may collectively comprise at least one functional group. In some non-limiting examples, the monomers may collectively comprise at least one monomer backbone unit.

[0555] In some non-limiting examples, the first oligomer and the second oligomer may together include at least one monomer backbone unit.

[0556] In some non-limiting examples, the monomer backbone units of the host and the dopant may include at least one common element. In some non-limiting examples, for the host and the dopant that are phosphazene-derived compounds, the at least one common element may be at least one of P and N. In some non-limiting examples, for the host and the dopant that are silsesquioxane-derived compounds, the at least one common element may be at least one of Si and O.

[0557] In some non-limiting examples, the functional groups of the host and the dopant may include at least one common element. In some non-limiting examples, the at least one common element may be at least one of F, C, and O.

[0558] In some non-limiting examples, the functional groups of the host and the dopant may include at least one common moiety. In some non-limiting examples, the at least one common moiety may be CH 2 and CF 2 At least one of .

[0559] In some non-limiting examples, the functional groups of the host and the dopant can be substantially the same.

[0560] In some non-limiting examples, the functional groups of the host and the dopant may include fluoroalkyl moieties. In some non-limiting examples, the fluoroalkyl moieties of the host may differ from the fluoroalkyl moieties of the dopant by no more than about one of 6 carbon units, 5 carbon units, 3 carbon units, 2 carbon units, and 1 carbon unit.

[0561] In some non-limiting examples, at least one of the host and the dopant may have a molecular structure that is substantially free of any metal element. In some non-limiting examples, the molecular structure of such a compound may be substantially free of any metal coordination complex and organometallic structure. In some non-limiting examples, the host may have a molecular structure that is substantially free of any metal element. Without wishing to be bound by any particular theory, it can be assumed that metal-containing compounds (including but not limited to example material 15) may exhibit a substantially low deposition contrast and therefore may have reduced applicability in at least some scenarios.

[0562] In some non-limiting examples, such patterned coating 110 may include: (i) any combination of example material 4, example material 10, example material 11, example material 12, example material 13, and example material 14; and (ii) any combination of example material 8 and other POSS-derived compounds, including but not limited to those having the same monomers as example material 8 and having a different number of monomers than example material 8 (including but not limited to one of 8 monomers and 10 monomers).

[0563] Main chain of monomers including P and N

[0564] In some non-limiting examples, the monomer backbone unit may include P and N, including but not limited to the phosphazene portion. In some non-limiting examples, at least a portion of the molecular structure of at least one of the first oligomer and the second oligomer may be represented by formula (6). In some non-limiting examples, at least one of the first oligomer and the second oligomer may be represented by formula (6). In some non-limiting examples, at least one of the first oligomer and the second oligomer may be a cyclophosphazene. In some non-limiting examples, the molecular structure of the cyclophosphazene may be represented by formula (6).

[0565] In some non-limiting examples, the value of n in formula (6) for the first oligomer can be different than the value of n in formula (6) for the second oligomer.

[0566] In some non-limiting examples, the absolute value of the difference between the n value in formula (6) of the first oligomer and the n value in formula (6) of the second oligomer can be 1. In some non-limiting examples, the molecular structure of one of the first oligomer and the second oligomer can be represented by formula (6), wherein n is 4, i.e., a tetramer. In some non-limiting examples, the molecular structure of the other of the first oligomer and the second oligomer can be represented by formula (6), wherein n is 3, i.e., a trimer.

[0567] In some non-limiting examples, at least a portion of the molecular structure of at least one of the first oligomer and the second oligomer may be represented by formula (7).

[0568] In some non-limiting examples, the n value in formula (7) of the first oligomer may be different from the n value in formula (7) of the second oligomer. In some non-limiting examples, the molecular structure of one of the first oligomer and the second oligomer may be represented by formula (7), wherein n is 4, i.e., a tetramer. In some non-limiting examples, the molecular structure of the other of the first oligomer and the second oligomer may be represented by formula (7), wherein n is 3, i.e., a trimer.

[0569] In some non-limiting examples, at least one of the first oligomer and the second oligomer may include a fluoroalkyl group represented by formula (8). In some non-limiting examples, the molecular structures of the first oligomer and the second oligomer may each include a fluoroalkyl group represented by formula (8) separately. In some non-limiting examples, the fluoroalkyl group of the first oligomer may be the same as the fluoroalkyl group of the second oligomer. In some non-limiting examples, the fluoroalkyl group of the first oligomer may be different from the fluoroalkyl group of the second oligomer. In some non-limiting examples, the fluoroalkyl group of the first oligomer may have a value of at least one of p and q different from the fluoroalkyl group of the second oligomer.

[0570] In some non-limiting examples, the first oligomer may include a fluoroalkyl group of formula (8), wherein Z is H, such that the fluoroalkyl group has CF 2 In some non-limiting examples, the second oligomer may include a fluoroalkyl group of formula (8), wherein Z is H. In some non-limiting examples, the second oligomer may include a fluoroalkyl group of formula (8), wherein Z is F.

[0571] Without wishing to be bound by any particular theory, it can be assumed that 3 Compared with similar phosphazene derivatives with terminal groups, including CF 2 A host of H-terminated phosphazene derivative compounds may have applicability in some scenarios. In some non-limiting examples, it has been found that the use of such a host can provide at least one of the following: a substantially high deposition contrast; a substantially low tendency of the patterned coating 110 to undergo crystallization; and a substantially low tendency of the patterned coating 110 to undergo cohesive failure (including but not limited to delamination). In some non-limiting examples, the host can be substantially free of any CF 3 In some non-limiting examples, the dopant may also be substantially free of any CF 3 Phosphazene derivative compounds of the group.

[0572] In some non-limiting examples, the monomers of the host may include at least one F-containing functional group, including but not limited to functional groups that are not perfluorinated, including but not limited to none of which are perfluorinated.

[0573] Monomer backbone including Si and O

[0574] In some non-limiting examples, the monomer backbone unit may include Si and O, including but not limited to a siloxane moiety, including but not limited to being part of a silsesquioxane. In some non-limiting examples, at least a portion of the molecular structure of at least one of the first oligomer and the second oligomer may be represented by at least one of formula (9), formula (10), and formula (11). In some non-limiting examples, at least one of the first oligomer and the second oligomer may be represented by at least one of formula (9), formula (10), and formula (11). In some non-limiting examples, at least one of the first oligomer and the second oligomer may be a silsesquioxane derivative.

[0575] In some non-limiting examples, the value of n in at least one of Formula (9), Formula (10), and Formula (11) of the first oligomer may be different from the value of n in at least one of Formula (9), Formula (10), and Formula (11) of the second oligomer.

[0576] In some non-limiting examples, the absolute value of the difference between the n value of the first oligomer and the n value of the second oligomer may be one of 2, 4, and 6. In some non-limiting examples, the molecular structure of one of the first oligomer and the second oligomer may be represented by at least one of Formula (9), Formula (10), and Formula (11), wherein n is 12. In some non-limiting examples, the molecular structure of the other of the first oligomer and the second oligomer may be represented by at least one of Formula (9), Formula (10), and Formula (11), wherein n is one of 8 or 10.

[0577] In some non-limiting examples, the host may be a silsesquioxane derivative according to at least one of formula (9), formula (10), and formula (11), and may include CH 2 CF 3 The functional group terminal unit.

[0578] Without wishing to be bound by any particular theory, it can be assumed that 2 CF 3 The host of silsesquioxane derivative compounds having end groups may have applicability in at least some scenarios compared to similar silsesquioxane derivative compounds including other fluoroalkyl end groups, including but not limited to at least one of the following: CH 2 CF 2 H.CF 2 CF 3 CF 2 CF 2 H and CF 2 CF 3 In some non-limiting examples, it has been found that using a CH 2 CF 3 The host of terminal silsesquioxane derivative compounds may have applicability in scenarios requiring at least one of: substantially high deposition contrast; substantially low tendency of the patterned coating 110 to undergo crystallization; and substantially low tendency of the patterned coating 110 to undergo cohesive failure (including but not limited to delamination).

[0579] Difference Between Host and Dopant

[0580] In some non-limiting examples, the host and dopant may differ in at least one other material property, including but not limited to composition, including but not limited to one of the following: the number of repeating monomers (including but not limited to oligomer units) and the presence in at least one of the repeating monomers.

[0581] Example

[0582] To compare the performance of a patterned coating 110 including multiple materials (including but not limited to a host and a dopant) having substantially high similarity with the performance of a patterned coating 110 including a single patterned material 511, the following experiment was conducted.

[0583] A series of samples were fabricated by depositing a patterned coating 110 with different compositions in a vacuum. For each sample, the The exposed layer surface 11 of the patterned coating 110 thus formed is subjected to an open mask deposition of a deposition material 631 including Ag at an average deposition rate of 100 nm until a reference thickness of about 30 nm is obtained. Once the sample is fabricated, an EM transmittance measurement is performed to determine the amount of Ag deposited on the exposed layer surface 11 of the patterned coating 110.

[0584] One of ordinary skill in the relevant art will appreciate that a sample having a substantial lack (including but not limited to no) of deposited material 631 (including but not limited to at least one of a metal and an alloy, including but not limited to at least one of Yb, Ag, Mg, and a Ag-containing material (including but not limited to MgAg) present thereon may be substantially transparent, whereas a sample having a significant amount of at least one of a metal and an alloy deposited thereon (including but not limited to as a sealing coating 140) may exhibit significantly reduced transmittance in some non-limiting examples. Thus, the performance of various example coatings as patterned coating 110 may be evaluated by measuring transmittance through the sample, which may be positively correlated to at least one of the amount and average layer thickness of deposited material 631 deposited thereon, the deposited material including but not limited to at least one of a metal and an alloy, including but not limited to in the form of at least one of Yb, Ag, Mg, and a Ag-containing material (including but not limited to MgAg), because a thin metal film (including but not limited to when formed as a sealing coating 140) may exhibit a high degree of absorption of EM radiation.

[0585] The decrease in transmittance at 460 nm wavelength after each sample was subjected to Ag vapor flux was measured and summarized in Table 7:

[0586] Table 7

[0587] Patterned coating Transmittance reduction at λ = 460nm (%) Sample material 11 4.69％ Sample material 12 4.34％ Sample material 11: Sample material 12 (volume ratio 9:1) 2.89％ Sample material 11: Sample material 12 (volume ratio 1:1) 2.33％ Sample material 11: Sample material 12 (volume ratio 1:9) 2.45％

[0588] Specifically, the reduction in transmittance (%) for each sample in Table 7 was determined by measuring the EM transmittance through the sample before and after exposure to Ag vapor flux 632 and expressing the reduction in transmittance as a percentage.

[0589] It can be seen that the samples including different proportions of Example Material 11 and Example Material 12 exhibit lower transmittance reduction (%), corresponding to increased deposition contrast, compared to the two samples including substantially only one of Example Material 11 and Example Material 12. A person of ordinary skill in the relevant art will appreciate that the samples exhibiting lower transmittance reduction (%) may have applicability as NIC materials having at least one of high deposition contrast and low initial adhesion probability in at least some scenarios.

[0590] Similar experiments were conducted using metal materials other than Ag as the deposition material 631, including but not limited to Yb, Mg, Cu, and MgAg (volume ratio of 1:9 to 9:1), each of which similarly exhibited at least one of high deposition contrast and low initial adhesion probability.

[0591] Category 2: Host and dopant are different

[0592] Without wishing to be bound by any particular theory, it may be postulated that, in some non-limiting examples, mixing a dopant having at least one given material property into a host that does not exhibit such given material property may produce a patterned coating 110 that may exhibit the given material property of the dopant while continuing to exhibit other material properties of the host. This capability may have applicability in some scenarios where the host exhibits certain material properties, including but not limited to at least one of a reduced tendency to cause delamination, a reduced tendency to cohesive failure, and a reduced tendency to crystallize, while the dopant exhibits certain other material properties, including but not limited to material properties that contribute to providing improved deposition contrast, including but not limited to at least one of low surface energy and a low melting point.

[0593] In some non-limiting examples, the different material properties of the host and dopant can be at least one of: surface energy (within a certain range in some non-limiting examples), melting point, and composition (including but not limited to the composition of a portion of the molecular structure of the host and dopant).

[0594] In some non-limiting examples, the host and dopant may exhibit similarity in at least one other material property including, but not limited to, at least one of sublimation temperature, molecular weight, photoluminescence, and the substantial absence thereof.

[0595] Sedimentation contrast

[0596] In some non-limiting examples, the body can exhibit a substantially high deposition contrast.

[0597] In some non-limiting examples, the dopant can exhibit a higher deposition contrast than the host. In some non-limiting examples, the host can exhibit a higher deposition contrast than the dopant.

[0598] In some non-limiting examples, the dopant can exhibit a substantially high deposition contrast. In some non-limiting examples, the dopant can exhibit a deposition contrast that is at least the same as that of the host.

[0599] In some non-limiting examples, the dopant may exhibit a substantially low deposition contrast. In some non-limiting examples, if the dopant exhibits a substantially low deposition contrast, the concentration of the host in the patterned coating 110 may substantially exceed the concentration of the dopant therein.

[0600] Surface energy

[0601] In some non-limiting examples, the characteristic surface energy of the host can exceed the characteristic surface energy of the dopant.

[0602] In some non-limiting examples, the body can have a characteristic surface energy of about one of between 15 dynes / cm-23 dynes / cm and 18 dynes / cm-22 dynes / cm.

[0603] In some non-limiting examples, the dopant may have a characteristic surface energy of one of between approximately 6 dynes / cm-22 dynes / cm, 8 dynes / cm-20 dynes / cm, 10 dynes / cm-18 dynes / cm, and 10 dynes / cm-15 dynes / cm.

[0604] In some non-limiting examples, the absolute value of the difference between the characteristic surface energy of the host and the characteristic surface energy of the dopant can be one of approximately 1 dyne / cm-13.5 dyne / cm, 2 dyne / cm-12 dyne / cm, 3 dyne / cm-11 dyne / cm, and 5 dyne / cm-10 dyne / cm.

[0605] In some non-limiting examples, the characteristic surface energy of the host may be between about 16 dynes / cm and 22 dynes / cm, while the characteristic surface energy of the dopant may be between about 10 dynes / cm and 15 dynes / cm.

[0606] In some non-limiting examples, the absolute value of the difference between the characteristic surface energy of the host and the characteristic surface energy of the dopant can be at least 3 dynes / cm.

[0607] In some non-limiting examples, the absolute value of the difference between the characteristic surface energy of the host and the characteristic surface energy of the dopant can be one of between approximately 3 dynes / cm-8 dynes / cm and 3 dynes / cm-5 dynes / cm.

[0608] Melting point

[0609] In some non-limiting examples, the melting point of the host may exceed the melting point of the dopant.

[0610] In some non-limiting examples, both the host and the dopant may have a melting point of at least about one of 80°C, 100°C, 110°C, 120°C, and 130°C.

[0611] In some non-limiting examples, the body may have a melting point of at least about one of 130°C, 150°C, 200°C, and 250°C.

[0612] In some non-limiting examples, the body may have a melting point of one of between approximately 100°C-350°C, 130°C-320°C, 150°C-300°C, and 180°C-280°C.

[0613] In some non-limiting examples, the dopant may have a melting point of no more than about one of 150°C, 140°C, 130°C, 120°C, and 110°C.

[0614] In some non-limiting examples, the dopant may have a melting point of one of between approximately 50°C-150°C, 80°C-150°C, 65°C-130°C, and 80°C-110°C.

[0615] In some non-limiting examples, the absolute value of the difference between the melting point of the host and the melting point of the dopant may be approximately one of 10°C-200°C, 20°C-200°C, 50°C-180°C, 80°C-150°C, and 100°C-120°C.

[0616] In some non-limiting examples, the host may have a melting point of one of approximately 150°C-300°C, 180°C-280°C, 200°C-260°C, and 220°C-250°C, and the dopant may have a melting point of at least one of approximately 100°C-150°C, 100°C-130°C, and 100°C-120°C.

[0617] In some non-limiting examples, the absolute value of the difference between the melting point of the host and the melting point of the dopant may be approximately one of 50°C-120°C, 70°C-100°C, and 80°C-100°C.

[0618] Evaporation temperature

[0619] In some non-limiting examples, the absolute value of the difference between the evaporation temperature of the host and the evaporation temperature of the dopant may not exceed one of approximately 5°C, 10°C, 15°C, 20°C, 30°C, 40°C, and 50°C.

[0620] In some non-limiting examples, the host and the dopant may each have an evaporation temperature between approximately 100°C-350°C.

[0621] In some non-limiting examples, the host and the dopant may have substantially similar evaporation temperatures such that the host and the dopant may be co-evaporated from one of separate evaporation sources and a single evaporation source.

[0622] Optical-Band Gap

[0623] In some non-limiting examples, the host can have a substantially large optical band gap. In some non-limiting examples, the host can have an optical band gap of at least about one of 3.4 eV, 3.5 eV, 4.1 eV, 5 eV, and 6.2 eV.

[0624] In some non-limiting examples, the optical band gap may correspond to a HOMO-LUMO energy gap.

[0625] Absorption - other optical effects

[0626] In some non-limiting examples, the body can exhibit substantially no absorption within a wavelength range of at least about one of the visible spectrum, the NIR spectrum, 365 nm, and 460 nm.

[0627] weight

[0628] In some non-limiting examples, the host can be a compound having a molecular weight of about one of 1,200-6,000 g / mol, 1,500-5,500 g / mol, 1,500-5,000 g / mol, 2,000-4,500 g / mol, 2,300-4,300 g / mol, and 2,500-4,000 g / mol.

[0629] composition

[0630] In some non-limiting examples, at least one of the host and the dopant may include a molecule comprising at least one of: a cage structure, a ring structure, and an organic-inorganic hybrid structure, including but not limited to POSS derivatives and cyclophosphazene derivatives.

[0631] In some non-limiting examples, the host may have a molecular structure including at least one of: a cage structure, a ring structure, and an organic-inorganic hybrid structure.

[0632] In some non-limiting examples, at least one of the host and the dopant may include at least one of F and Si. In some non-limiting examples, the host may include at least one of F and Si, and the dopant may include at least one of F and Si. In some non-limiting examples, both the host and the dopant may include F. In some non-limiting examples, both the host and the dopant may include Si. In some non-limiting examples, each of the host and the dopant may include at least one of F and Si. In some non-limiting examples, the host may be POSS and the dopant may be cyclophosphazene.

[0633] In some non-limiting examples, the degree of fluorination can be measured by the percentage of the molecular weight of the compound attributable to the F atoms contained therein. In some non-limiting examples, the host can include F in a proportion of about 25%-75%, 25%-70%, 30%-70%, 35%-50%, 35%-45%, and 35%-40% as a percentage of the molecular weight of the compound. In some non-limiting examples, the dopant can include F in a proportion of about 25%-75%, 25%-70%, 30%-70%, 50%-70%, 55%-70%, and 60%-70% as a percentage of the molecular weight of the compound. In some non-limiting examples, the dopant can be selected so that the proportion of F (as a percentage of the molecular weight of the dopant compound) can exceed the proportion of the host. In some non-limiting examples, the host may include F in a proportion of between about 35%-45% as a percentage of the molecular weight of the compound, and the dopant may include F in a proportion of between about 60%-70% as a percentage of the molecular weight of the compound.

[0634] In some non-limiting examples, the molecular structure of the subject may include F and C having an atomic ratio corresponding to an F / C quotient of one of about 0.7-2.5, 0.7-2, 0.8-1.85, 0.7-1.3, and 0.75-1.1. In some non-limiting examples, the atomic ratio of F to C may be determined by counting all F atoms present in the compound structure, and for C atoms, counting only the sp atoms present in the compound structure. 3 Hybridized C atoms are counted.

[0635] In some non-limiting examples, the body may contain a substantially low number of sp 2 Hybridized C atoms. In some non-limiting examples, the host may include sp in a proportion of no more than about 10%, 8%, 5%, 3%, 2% and 1% based on the molecular weight of the compound. 2Hybridized C atoms. In some non-limiting examples, the host may contain sp in a proportion of no more than about 15%, 13%, 10%, 8%, 5%, 3%, 2%, and 1% based on the total number of C atoms contained in the compound. 2 Without wishing to be bound by any particular theory, it can be assumed that with a substantially high proportion of sp 2 Compared with similar compounds with hybridized C atoms, they have a substantially lower proportion of sp 2 A host of hybridized C atoms may be suitable in at least some scenarios due to at least one of: a substantially high deposition contrast; a substantially low tendency of the patterned coating 110 to undergo crystallization; and a substantially low tendency of the patterned coating 110 to undergo cohesive failure (including but not limited to delamination).

[0636] In some non-limiting examples, at least one of the host and the dopant can include a continuous fluorinated carbon chain of no more than one of 6, 4, 3, 2, and 1.

[0637] In some non-limiting examples, the host can be an oligomer.

[0638] In some non-limiting examples, the body may include Si. In some non-limiting examples, the body may include Si and O. In some non-limiting examples, substantially all Si atoms of the body may form a portion of at least one of the siloxane portion and the silsesquioxane portion of the body. Without wishing to be bound by any particular theory, it may be assumed that a body substantially free of reactive silicon sites may have applicability in scenarios requiring at least one of a substantially high melting point and a substantially high deposition contrast. In some non-limiting examples, it has been found that materials containing reactive Si sites (which in some non-limiting examples may be in the form of at least one of the following: silane moieties, trichlorosilane moieties, and alkoxysilane moieties) may tend to exhibit at least one of the following: a substantially low melting point, a substantially low deposition contrast, and a substantially high initial adhesion probability relative to the deposited material 631, due to the presence of such reactive Si sites. In some non-limiting examples, reactive Si sites may include those in which Si is bonded to at least one of H, Cl, Br, and I.

[0639] In some non-limiting examples, the host can include fully condensed silsesquioxane moieties, i.e., the molecular structure of the host can be substantially free of any partially condensed (including but not limited to uncondensed) siloxane and at least one of Si-O moieties.

[0640] In some non-limiting examples, the body may include a single body.

[0641] In some non-limiting examples, the monomer of the host may include a monomer backbone unit containing Si. In some non-limiting examples, at least one of POSS and a POSS derivative compound. In some non-limiting examples, the POSS derivative compound may include a functional group containing F.

[0642] In some non-limiting examples, each of the host and the dopant can be an oligomer. In some non-limiting examples, the host can include a first oligomer and the dopant can include a second oligomer.

[0643] In some non-limiting examples, the host can be a non-polymeric material including, but not limited to, an oligomer, including, but not limited to, a block oligomer.

[0644] In some non-limiting examples, the functional group monomer unit of the host may be CH 2 and CF 2 In some non-limiting examples, the functional groups of the subject may include CH 2 CF 3 In some non-limiting examples, such functional group monomer units may be bonded together to form at least one of an alkyl and fluoroalkyl oligomer unit. In some non-limiting examples, the monomer unit of the subject may include a functional group terminal unit. In some non-limiting examples, the functional group terminal unit of the subject may be arranged at the end of the monomer unit and bonded to its functional group monomer unit. In some non-limiting examples, the end at which the functional group terminal unit of the subject may be arranged may correspond to a portion of the functional group that may be away from the monomer main chain unit. In some non-limiting examples, the functional group terminal unit of the subject may include a CF 3 and CH 2 CF 3 At least one of .

[0645] In some non-limiting examples, each functional group of the subject may include no more than a single fluorinated carbon moiety, including but not limited to compounds represented by formula (11). In some non-limiting examples, the single fluorinated carbon moiety of the functional group of the subject may correspond to a terminal moiety, including but not limited to CF 3 part.

[0646] In some non-limiting examples, the functional groups of the host may be substantially free of any sp 2 Hybridized C atoms, that is, the functional groups of the subject may be substantially free of sp 2 Any double bonds and aromatic hydrocarbon moieties required for hybridization of C atoms. In some non-limiting examples, any C atom contained in the functional group of the subject may be sp 3 Hybridized C atoms.

[0647] In some non-limiting examples, the host can be substantially free of any aromatic structures therein.

[0648] In some non-limiting examples, the dopant may include a monomer.

[0649] In some non-limiting examples, the monomer of the dopant may include a F-containing functional group.

[0650] In some non-limiting examples, the functional group monomer unit of the dopant may be CH 2 and CF 2 In some non-limiting examples, the functional group of the dopant may include CF 2 CF 3 and CH 2 CF 3 In some non-limiting examples, such functional group monomer units may be bonded together to form at least one of alkyl and fluoroalkyl oligomer units. In some non-limiting examples, the monomer unit of the dopant may include a functional group terminal unit. In some non-limiting examples, the functional group terminal unit of the dopant may be arranged at the end of the monomer unit and bonded to its functional group monomer unit. In some non-limiting examples, the end at which the functional group terminal unit of the dopant may be arranged may correspond to a portion of the functional group that may be away from the monomer main chain unit. In some non-limiting examples, the functional group terminal unit of the dopant may include a CF 2 CF 3 and CH 2 CF 3 At least one of .

[0651] In some non-limiting examples, the dopant may include P and N, including but not limited to phosphazenes, wherein there is a double bond between P and N and may be represented as "NP" or "N=P", including but not limited to at least one of cyclophosphazenes (including but not limited to as part of its monomer backbone unit) and cyclophosphazene derivative compounds. In some non-limiting examples, the cyclophosphazene derivative compound may include a functional group containing F.

[0652] In some non-limiting examples, the dopant may include F. In some non-limiting examples, the dopant may include at least the same degree of fluorination as the host.

[0653] In some non-limiting examples, the dopant may be a non-polymeric material, including but not limited to an oligomer, including but not limited to a block oligomer.

[0654] In some non-limiting examples, the concentration of the dopant in the patterned coating 110 may not exceed about 50%, including but not limited to not more than about one of 40%, 30%, 25%, 20%, 15%, 10%, and 5%. In some non-limiting examples, the concentration of the dopant in the patterned coating 110 may not exceed a concentration corresponding to the eutectic point of the mixture, so that the patterned coating 110 may be a sub-eutectic mixture of the host and the dopant.

[0655] In some non-limiting examples, the concentration of the dopant in the patterned coating 110 may be at least about one of 1%, 3%, 5%, 7%, and 10%. Without wishing to be bound by any particular theory, it may be hypothesized that a dopant concentration of one of about 5%-30%, 5%-20%, and 5%-15% may have applicability in at least some scenarios where it is desirable to enhance at least one property of the patterned coating 110 formed from a mixture of the dopant and the host.

[0656] In some non-limiting examples, at least one of the host and the dopant may have a molecular structure substantially free of any metal element, including but not limited to at least one of a metal coordination complex and an organometallic structure. In some non-limiting examples, the host may have a molecular structure substantially free of any metal element.

[0657] In some non-limiting examples, the host-dopant combination of such patterned coating 110 may include a host that is example material 8 and a dopant selected from at least one of example material 4, example material 10, example material 11, example material 12, example material 13, and example material 14.

[0658] Metal fluoride dopants

[0659] In some non-limiting examples, the dopant can be a metal fluoride containing F and at least one of an alkali metal, an alkaline earth metal, and a rare earth metal, including but not limited to cesium fluoride, LiF, potassium fluoride, rubidium fluoride, sodium fluoride, beryllium fluoride, magnesium fluoride, calcium fluoride, strontium fluoride, barium fluoride, scandium fluoride, neodymium fluoride, ytterbium fluoride, yttrium fluoride, erbium fluoride, lanthanum fluoride, samarium fluoride, terbium fluoride, and thulium fluoride.

[0660] In some non-limiting examples, the dopant may include at least one of LiF, magnesium fluoride, and ytterbium fluoride.

[0661] In some non-limiting examples, the dopant may include LiF.

[0662] In some non-limiting examples, the body of such patterned coating 110 can be one of example material 4, example material 8, example material 10, example material 11, example material 12, example material 13, and example material 14.

[0663] Surface Energy-Melting Point

[0664] In some non-limiting examples, the body can have a characteristic surface energy of about 16 dynes / cm-20 dynes / cm and a melting point of about 150°C-300°C.

[0665] In some non-limiting examples, the dopant may have a characteristic surface energy of at least about 8 dynes / cm but lower than the characteristic surface energy of the host by (including but not limited to) at least 3 dynes / cm (including but not limited to one between about 3 dynes / cm-8 dynes / cm and 3 dynes / cm-5 dynes / cm), and a melting point of at least about 100°C but lower than the melting point of the host by (including but not limited to one between about 50°C-120°C, 70°C-110°C, and 80°C-100°C).

[0666] Deposition Contrast - Surface Energy - Cohesive Energy

[0667] It has been found that, in some non-limiting examples, patterned coatings 110 formed from certain patterned materials 511 having substantially low characteristic surface energies (including, but not limited to, no more than one of about 15 dynes / cm, 14 dynes / cm, 13 dynes / cm, and 10 dynes / cm) can exhibit substantially high deposition contrast, but can also exhibit at least one of substantially low cohesive energy and adhesive energy compared to adjacent layers. While the substantially high deposition contrast achievable by such patterned materials 511 can have applicability in some scenarios, at least one of substantially low cohesive energy and adhesive energy can have reduced applicability in some scenarios because it has the potential to cause device damage and introduce reliability issues.

[0668] It has been discovered that, in some non-limiting examples, patterned coatings 110 formed from certain patterned materials 511 having characteristic surface energies (including, but not limited to, one of between about 15 dynes / cm-25 dynes / cm, 16 dynes / cm-22 dynes / cm, and 17 dynes / cm-20 dynes / cm) can exhibit a deposition contrast that can be useful in some scenarios while also exhibiting at least one of substantially high cohesive energy and adhesion energy relative to adjacent layers (such as CPL). While at least one of substantially high cohesive energy and adhesion between these layers can be useful in some scenarios, the pattern contrast achievable by such patterned materials 511 can be substantially low compared to the pattern contrast achievable by patterned materials 511 having substantially low characteristic surface energies, potentially reducing their applicability in some scenarios in which such materials can be used.

[0669] It has been discovered that, in some non-limiting examples, a patterned coating 110 formed by mixing (doping) a host having a substantially low deposition contrast with a dopant having a substantially high deposition contrast can, in some non-limiting examples, exhibit a deposition contrast that is substantially at least that of the second material itself, while also exhibiting at least one of cohesive energy and adhesive energy relative to adjacent layers that is substantially similar to the deposition contrast exhibited by the first material itself.

[0670] In some non-limiting examples, the host may exhibit a substantially high characteristic surface energy. In some non-limiting examples, the dopant may exhibit a substantially low characteristic surface energy. In some non-limiting examples, the host may exhibit a characteristic surface energy that is substantially at least the same as the dopant.

[0671] Example

[0672] To compare the performance of a patterned coating 110 including multiple materials (including but not limited to a host and a dopant) having substantially low similarity with the performance of a patterned coating 110 including a single patterned material 511, the following experiment was conducted.

[0673] A series of samples were fabricated by depositing an approximately 20 nm thick layer of organic material in vacuum, which in some non-limiting examples may be a HTL material, and then depositing a patterned coating 110 having different compositions thereon.

[0674] For each sample, then approximately The exposed layer surface 11 of the patterned coating 110 thus formed is subjected to an open mask deposition of a deposition material 631 including Ag until a reference thickness of about 15 nm is obtained. Once the sample is fabricated, an EM transmittance measurement is performed to determine the relative amount of Ag deposited on the exposed layer surface 11 of the patterned coating 110.

[0675] In some non-limiting examples, a decrease in EM transmittance may generally be positively correlated with the amount of deposited material 631 condensed on the patterned coating 110 .

[0676] The reduction in transmittance at a wavelength of 460 nm after each sample was subjected to the Ag vapor flux was measured and summarized in Table 8, along with the critical surface tension measured from each patterned coating 110 before exposing its exposed layer surface 11 to the Ag vapor flux 632:

[0677] Table 8

[0678]

[0679] Specifically, the reduction in transmittance (%) for each sample in Table 8 was determined by measuring the EM transmittance through the sample before and after exposure to Ag vapor flux 632 and expressing the reduction in transmittance as a percentage.

[0680] It can be seen that while the sample substantially including only Example Material 8 exhibited a 9.7% transmittance reduction, other samples in which patterned coatings 110 were formed by doping Example Material 8 with a dopant exhibiting at least the same deposition contrast as Example Material 8 resulted in such patterned coatings 110 exhibiting substantially lower transmittance reductions. For example, patterned coatings 110 formed of Example Material 11: Example Material 8 (volume ratio 1:9), Example Material 12: Example Material 8 (volume ratio 1:19), Example Material 13: Example Material 8 (volume ratio 1:19), Example Material 13: Example Material 8 (volume ratio 1:9), and Example Material 4: Example Material 8 (volume ratio 1:9) each exhibited substantially low transmittance reductions compared to the patterned coating 110 including only Example Material 8, indicating that even substantially small amounts of these dopants can significantly improve deposition contrast.

[0681] In contrast, example material 14 was found to exhibit substantially low deposition contrast in at least one of the following situations: deposited by itself as patterned coating 110, and doped with varying concentrations of example material 11. Based on the foregoing, it can be observed that the suitability of using example material 14 as a host may be reduced in at least some scenarios.

[0682] Similar experiments were conducted using metal materials other than Ag as the deposition material 631, including but not limited to Yb, Mg, Cu, and MgAg (volume ratio of 1:9 to 9:1), each of which similarly exhibited at least one of high deposition contrast and low initial adhesion probability.

[0683] Enhance patterning contrast while satisfying crystallization / cohesion constraints

[0684] It has been discovered that, in some non-limiting examples, a patterned coating 110 formed by mixing a host having a substantially low deposition contrast with a dopant having a substantially high deposition contrast can exhibit a deposition contrast comparable to that of the dopant when used alone, while also exhibiting at least one of cohesive energy and adhesive energy relative to adjacent layers to a substantially similar degree as the host when used alone.

[0685] To evaluate the propensity of the patterned coating 110 to undergo crystallization, a series of samples were made by depositing a layer of Liq about 20 nm thick in a vacuum, followed by depositing a patterned coating 110 of different compositions thereon. Additional samples with the same structure were made, and additional layers of organic material and LiF were deposited on the exposed layer surface 11 of the patterned coating 110 to act as a CPL. The samples were then baked at 100° C. for 240 hours and analyzed visually and by using EM transmittance measurements to determine whether the patterned coating 110 crystallized during baking. Samples with little or no signs of crystallization were identified as having passed the crystallization test, and samples with signs of crystallization were identified as having failed the crystallization test.

[0686] In order to evaluate the tendency of the patterned coating 110 to experience one of delamination or cohesive failure, a series of samples were made to determine the failure point when it peeled off and delaminated at least one of them. Specifically, each sample was made by depositing a layer of each example material used as the patterned coating 110 on a glass substrate 10 with a thickness of about 50nm, followed by depositing a layer of an organic material with a thickness of about 50nm that is generally used to deposit the CPL. Then, an adhesive tape was applied to the exposed layer surface 11 of the CPL of each sample. The adhesive tape was peeled off to cause delamination of each sample, and the peeled tape and the delaminated samples were analyzed to determine at which layer interface with the layer 810 below it that the failure occurred. Samples that failed within the patterned coating 110 or at the interface between the patterned coating 110 and the adjacent layer were identified as failing the delamination test, and samples that failed within the CPL (i.e., cohesive failure within the CPL) were identified as passing the delamination test.

[0687] Table 9 summarizes the results of the crystallization and delamination tests:

[0688] Table 9

[0689] Patterned coating Crystallization test Layered Testing Sample material 4 -- Failed Sample material 8 pass pass Sample material 11 Failed Failed Sample material 12 Failed Failed Sample material 13 Failed Failed Sample material 14 pass Failed Sample material 11: Sample material 14 (volume ratio 1:9) pass Failed Sample material 11: Sample material 8 (volume ratio 1:9) pass pass Sample material 12: Sample material 8 (volume ratio 1:19) pass pass Sample material 12: Sample material 8 (volume ratio 1:9) pass pass Sample material 13: Sample material 8 (volume ratio 1:19) pass pass Sample material 13: Sample material 8 (volume ratio 1:9) pass pass Sample material 4: Sample material 8 (volume ratio 1:9) -- pass

[0690] As can be seen from the results of Tables 8 and 9, it is observed that the patterned coating 110 formed by mixing a dopant into a host including Example Material 8 enhances its deposition contrast while maintaining the crystallization and delamination properties of the host. Specifically, it was found that samples in which the patterned coating 110 was formed of Example Material 8, and those samples formed of at least one of the following: Example Material 11: Example Material 8 (volume ratio 1:9), Example Material 12: Example Material 8 (volume ratio 1:19), Example Material 12: Example Material 8 (volume ratio 1:9), Example Material 13: Example Material 8 (volume ratio 1:19), and Example Material 13: Example Material 8 (volume ratio 1:9) have passed the crystallization and delamination tests.

[0691] In contrast, it was found that patterned coating 110 formed of example material 14 had passed the crystallization test but failed the delamination test due to cohesive failure in patterned coating 110. It was also found that patterned coating 110 formed by doping example material 11 into example material 14 had passed the crystallization test but failed the delamination test. Based on the results of Tables 8 and 9, it is observed that example material 14 may reduce suitability as a host material for at least some scenarios requiring substantially high deposition contrast and high cohesive strength.

[0692] A series of samples were fabricated by depositing a layer of organic material about 20 nm thick in vacuum, and then depositing a patterned coating 110 with different compositions thereon. The organic material, in some non-limiting examples, may be a HTL material. For each sample, then about The exposed layer surface 11 of the patterned coating 110 thus formed was subjected to an open mask deposition of the deposition material 631 including Ag, at an average deposition rate of 15 nm, until a reference thickness of about 15 nm was obtained. Once the sample was fabricated, an EM transmittance measurement was performed to determine the relative amount of Ag deposited on the exposed layer surface 11 of the patterned coating 110. As described above, the decrease in transmittance is generally positively correlated with the amount of the deposition material 631 condensed on the patterned coating 110.

[0693] A series of samples having the same composition of the patterned coating 110 were made to evaluate the propensity of the patterned coating 110 to undergo crystallization. These samples were made by depositing a layer of Liq about 20 nm thick in a vacuum and then depositing a patterned coating 110 having different compositions thereon. Additional samples having the same structure were made and additional layers of organic material and LiF were deposited on the surface of the patterned coating to act as a CPL. The samples were then baked at 100° C. for 240 hours and analyzed visually and by using EM transmittance measurements to determine whether the patterned coating 110 crystallized during baking. Samples with little or no signs of crystallization were identified as having passed the crystallization test, and samples with signs of crystallization were identified as having failed the crystallization test.

[0694] The decrease in transmittance at 460 nm wavelength after each sample was subjected to Ag vapor flux was measured and summarized in Table 10 along with the crystallization test results:

[0695] Table 10

[0696] Patterned coating Transmittance reduction at λ = 460nm (%) Crystallization test Sample material 11 1.4％ Failed LiF: Example Materials 11 (1:19) 4.4％ pass LiF: Example material 11 (1:9) 5.6％ pass LiF: Example material 11 (1:4) 7.1％ pass

[0697] It can be seen that while the sample comprising substantially only example material 11 exhibited a 1.4% transmittance reduction, it also failed the crystallization test, and thus such material itself may have reduced suitability in scenarios where it is desired to reduce the tendency of patterned coating 110 to crystallize. While doping LiF into a host comprising example material 11 resulted in a higher transmittance reduction, it also significantly reduced the tendency of such patterned coating 110 to undergo crystallization. It was found that even at a substantially low dopant concentration of about 5% LiF in example material 11, the crystallization properties of patterned coating 110 improved with marginal increases in transmittance reduction.

[0698] Similar experiments were conducted using metal materials other than Ag as the deposition material 631, including but not limited to Yb, Mg, Cu, and MgAg (volume ratio of 1:9 to 9:1), each of which similarly exhibited at least one of high deposition contrast and low initial adhesion probability.

[0699] Although not shown in the above table, samples having structures similar to those used to obtain the results of Tables 8, 9, and 10 were also fabricated and tested, except that Example Material 3 was used as the host and in place of Example Material 11. For the dopant, different concentrations of Example Material 11 were used as the dopant. Based on the results, mixing in a dopant that exhibits a higher deposition contrast than the host itself does not appear to substantially enhance the deposition contrast of the resulting patterned coating 110 containing Example Material 3 as the host and Example Material 11 as the dopant.

[0700] Category 3: Dopants exhibit a photoluminescent response

[0701] In some non-limiting examples, the host and dopant may be characterized by at least one of: at least one substantially similar material property and at least one substantially different material property, which material properties may include, but are not limited to, at least one of: initial adhesion probability, transmittance, deposition contrast, surface energy, melting point, sublimation temperature, cohesive energy, optical band gap, refractive index, extinction coefficient, average layer thickness, molecular weight, composition, and other optical effects (including but not limited to absorption).

[0702] Sedimentation contrast

[0703] In some non-limiting examples, the body can exhibit a substantially high deposition contrast.

[0704] In some non-limiting examples, the dopant may exhibit a substantially high deposition contrast.

[0705] In some non-limiting examples, the dopant may exhibit a substantially low deposition contrast. In some non-limiting examples, the dopant may act as an NPC.

[0706] Surface energy

[0707] In some non-limiting examples, the surface energy of the body can be no more than about one of 25 dynes / cm, 21 dynes / cm, 20 dynes / cm, 19 dynes / cm, 18 dynes / cm, 17 dynes / cm, 16 dynes / cm, 15 dynes / cm, 14 dynes / cm, and 13 dynes / cm.

[0708] In some non-limiting examples, the monomer backbone units of the host may have a surface tension of one of: at least about 25 dynes / cm, 30 dynes / cm, 40 dynes / cm, 50 dynes / cm, 75 dynes / cm, 100 dynes / cm, 150 dynes / cm, 200 dynes / cm, 250 dynes / cm, 500 dynes / cm, 1,000 dynes / cm, 1,500 dynes / cm, and 2,000 dynes / cm.

[0709] In some non-limiting examples, at least one functional group of a monomer of the subject may have a low surface tension. In some non-limiting examples, at least one functional group of a monomer may have a surface tension of one of: no more than about 25 dynes / cm, 21 dynes / cm, 20 dynes / cm, 19 dynes / cm, 18 dynes / cm, 17 dynes / cm, 16 dynes / cm, 15 dynes / cm, 14 dynes / cm, 13 dynes / cm, 12 dynes / cm, 11 dynes / cm, and 10 dynes / cm.

[0710] In some non-limiting examples, the dopant may exhibit a characteristic surface energy that is at least the same as the host. In some non-limiting examples, the dopant may exhibit a characteristic surface energy that exceeds the characteristic surface energy of the host by at least about 5 dynes / cm, 10 dynes / cm, 15 dynes / cm, 20 dynes / cm, 30 dynes / cm, and 50 dynes / cm. In some non-limiting examples, the dopant may exhibit a characteristic surface energy that is at least about 25 dynes / cm, 30 dynes / cm, 35 dynes / cm, 40 dynes / cm, and 50 dynes / cm.

[0711] In some non-limiting examples, materials having substantially high surface energies, including but not limited to patterned material 511, may be suitable for use in some scenarios where optical techniques are used to detect films of such materials.

[0712] Thermal properties

[0713] In some non-limiting examples, patterned coating 110 may include multiple materials that exhibit similar thermal properties, where at least one of the materials exhibits photoluminescence.

[0714] Melting point

[0715] In some non-limiting examples, the body may have a melting point of at least about one of 130° C., 150° C., 200° C., and 250° C. In some non-limiting examples, the body may have a melting point of about one of 100° C.-350° C., 130° C.-320° C., 150° C.-300° C., and 180° C.-280° C.

[0716] In some non-limiting examples, the melting point difference of the various materials of the patterned coating 110 (including but not limited to the absolute value of the melting point difference of the host and the dopant) may not exceed one of approximately 5°C, 10°C, 15°C, 20°C, 30°C, 40°C and 50°C.

[0717] Sublimation temperature

[0718] In some non-limiting examples, the sublimation temperature difference of the various materials of the patterned coating 110 (including but not limited to the absolute value of the sublimation temperature difference of the host and the dopant) may not exceed one of approximately 5°C, 10°C, 15°C, 20°C, 30°C, 40°C and 50°C.

[0719] Optical-Band Gap

[0720] In some non-limiting examples, the dopant may have a first optical band gap and the host may have a second optical band gap. In some non-limiting examples, the second optical band gap may be at least the first optical band gap. In some non-limiting examples, the absolute value of the difference between the first optical band gap and the second optical band gap may be at least about one of 0.3 eV, 0.5 eV, 0.7 eV, 1 eV, 1.3 eV, 1.5 eV, 1.7 eV, 2 eV, 2.5 eV, and 3 eV.

[0721] In some non-limiting examples, the first optical band gap may be no more than about one of 4.1 eV, 3.5 eV, and 3.4 eV.

[0722] In some non-limiting examples, the second optical band gap can be at least approximately one of 3.4 eV, 3.5 eV, 4.1 eV, 5 eV, and 6.2 eV.

[0723] In some non-limiting examples, at least one of the first optical band gap and the second optical band gap may correspond to a HOMO-LUMO energy gap.

[0724] Photoluminescence

[0725] In some non-limiting examples, the dopant can exhibit photoluminescence at a wavelength corresponding to at least one of a UV spectrum and a visible spectrum.

[0726] In some non-limiting examples, the body can exhibit substantially no photoluminescence at any wavelength corresponding to the visible spectrum, including but not limited to photoluminescence.

[0727] In some non-limiting examples, the subject can exhibit substantially no photoluminescence when subjected to EM radiation having a wavelength of at least about one of 300 nm, 320 nm, 350 nm, and 365 nm. In some non-limiting examples, the subject can exhibit little detectable absorption, including but not limited to substantially no detectable absorption, when subjected to such EM radiation.

[0728] In some non-limiting examples, the optical band gap of the host can exceed the photon energy of the EM radiation emitted by the EM source, such that the host does not undergo photoexcitation when subjected to such radiation. However, the patterned coating 110 including the host and the dopant can still exhibit photoluminescence when subjected to such radiation due to the dopant exhibiting luminescence. In this manner, in some non-limiting examples, the presence of the patterned coating 110 can be detected using conventional characterization techniques (including but not limited to fluorescence microscopy) to confirm the deposition of the patterned coating 110, including but not limited to at least one of the lateral extent and the longitudinal extent of the patterned coating.

[0729] Refractive Index

[0730] In some non-limiting examples, the body can have a refractive index of no more than about one of 1.5, 1.45, 1.44, 1.43, 1.42, and 1.41 at a wavelength of one of about 460 nm and 500 nm.

[0731] weight

[0732] In some non-limiting examples, the molecular weight of each of the various materials of the patterned coating 110 (including but not limited to the host and the dopant) may be at least about one of 750 g / mol, 1,000 g / mol, 1,500 g / mol, 2,000 g / mol, 2,500 g / mol, and 3,000 g / mol.

[0733] In some non-limiting examples, the molecular weight of each of the plurality of materials of the patterned coating, including but not limited to the host and the dopant, may not exceed about 5,000 g / mol.

[0734] composition

[0735] In some non-limiting examples, the concentration of the dopant in the patterned coating 110 (including but not limited to by weight) may not exceed the concentration of the host.

[0736] In some non-limiting examples, the patterned coating 110 may include at least about 0.1 wt%, 0.2 wt%, 0.5 wt%, 0.8 wt%, 1 wt%, 3 wt%, 5 wt%, 8 wt%, 10 wt%, 15 wt%, and 20 wt% of one of the dopants. In some non-limiting examples, the patterned coating 110 may include no more than about 50 wt%, 40 wt%, 30 wt%, 25 wt%, 20 wt%, 15 wt%, 10 wt%, 8 wt%, 5 wt%, 3 wt%, and 1 wt% of one of the dopants. In some non-limiting examples, the remainder of the patterned coating 110 may substantially include the body.

[0737] Without wishing to be bound by any particular theory, it can be postulated that dopants exhibiting a photoluminescent response can tend to include a high surface energy portion that can tend to reduce the deposition contrast exhibited by a patterned coating 110 formed by mixing such dopants into a host. In some non-limiting examples, the patterned coating 110 can include no more than about 5 wt%, 3 wt%, 2 wt%, 1 wt%, 0.5 wt%, and 0.1 wt% of one of the dopants.

[0738] In some non-limiting examples, at least one of the materials of the patterned coating 110 (which may include at least one of a host and a dopant) may include at least one of F atoms and Si atoms. In some non-limiting examples, at least one of the host and the dopant may include at least one of F and Si. In some non-limiting examples, the host may include at least one of F and Si. In some non-limiting examples, both the host and the dopant may include F. In some non-limiting examples, both the host and the dopant may include Si. In some non-limiting examples, each of the host and the dopant may include at least one of F and Si.

[0739] In some non-limiting examples, at least one of the host and the dopant of the patterned coating 110 can be an oligomer. In some non-limiting examples, the host can include a first oligomer, and the dopant can include a second oligomer. In some non-limiting examples, each of the first oligomer and the second oligomer can include a plurality of monomers.

[0740] In some non-limiting examples, the host may consist essentially of a first oligomer, and the dopant may consist essentially of a second oligomer.

[0741] In some non-limiting examples, the patterned coating 110 may include a third material different from the host and the dopant. In some non-limiting examples, the third material may include a third oligomer. In some non-limiting examples, the third material may substantially include the third oligomer. In some non-limiting examples, each of the first oligomer, the second oligomer, and the third oligomer may contain at least one monomer together.

[0742] In some non-limiting examples, the first oligomer and the second oligomer may contain at least one monomer in common. In some non-limiting examples, the first oligomer and the second oligomer may contain at least one monomer backbone unit in common.

[0743] In some non-limiting examples, at least a portion of the molecular structure of at least one of the first oligomer and the second oligomer may be represented by Formula (1). In some non-limiting examples, each of the first oligomer and the second oligomer may be independently represented by Formula (1).

[0744] In some non-limiting examples, the monomer may include a functional group. In some non-limiting examples, at least one functional group of the monomer may include at least one of F and Si, including but not limited to one of a fluorocarbon group and a siloxane group.

[0745] In some non-limiting examples, the monomer may include CF 2 Groups and CF 2 In some non-limiting examples, the monomer may include CF 2 Groups and CF 3 In some non-limiting examples, the monomer may include at least one of C and O.

[0746] In some non-limiting examples, the molecular structure of at least one of the first oligomer and the second oligomer may include a plurality of different monomers, i.e., such molecular structure may include monomer species having different molecular compositions and at least one of the molecular structures, including but not limited to those monomer species represented by at least one of formula (3) and formula (4).

[0747] In some non-limiting examples, the monomer can be represented by formula (5).

[0748] In some non-limiting examples, the monomer backbone unit may include at least one of P and N, including but not limited to phosphazene. In some non-limiting examples, at least a portion of the molecular structure of at least one of the first oligomer and the second oligomer may be represented by formula (6). In some non-limiting examples, at least one of the first oligomer and the second oligomer may be cyclophosphazene. In some non-limiting examples, the molecular structure of cyclophosphazene may be represented by formula (6).

[0749] In some non-limiting examples, at least a portion of the molecular structure of at least one of the first oligomer and the second oligomer can be represented by formula (7). In some non-limiting examples, the molecular structure of the first oligomer can be represented by formula (7), wherein n is 4, i.e., a tetramer. In some non-limiting examples, the molecular structure of the second oligomer can be represented by formula (7), wherein n is 3, i.e., a trimer. In some non-limiting examples, the molecular structure according to formula (7) can be cyclophosphazene.

[0750] In some non-limiting examples, the fluoroalkyl groups R of the first oligomer and the second oligomer are f In some non-limiting examples, the fluoroalkyl group R in formula (7) f It can be represented by formula (8). In some non-limiting examples, the molecular formula representing the first oligomer and the second oligomer can have the same q value and different n values. In some non-limiting examples, the molecular formula representing the first oligomer and the second oligomer can have the same n value and different q values.

[0751] Although some non-limiting examples have been described herein with reference to a host and a dopant, it will be appreciated that the patterned coating 110 may include at least one additional material. In some non-limiting examples, the description of at least one of the molecular structure and any other properties of at least one of the host, the dopant, the first material, the second material, the first oligomer, and the second oligomer may apply to at least one such additional material of the patterned coating 110.

[0752] Thermal Properties - Photoluminescence - Composition

[0753] In some non-limiting examples, the patterned coating 110 may include a plurality of materials exhibiting similar thermal properties, wherein at least one of the materials exhibits photoluminescence. In some non-limiting examples, at least one of the materials may include at least one of F and Si.

[0754] In some non-limiting examples, the patterned coating 110 may include a plurality of materials exhibiting similar thermal properties, wherein at least one of the materials exhibits photoluminescence at a wavelength of at least about 365 nm when excited by EM radiation having an excitation wavelength of about 365 nm, and wherein at least one of the materials may include at least one of F and Si.

[0755] In some non-limiting examples, the patterned coating 110 may include a plurality of materials having at least one common element and at least one common substructure, wherein at least one of the materials exhibits photoluminescence at a wavelength of at least about 365 nm when exhibited by EM radiation having an excitation wavelength of about 365 nm. In some non-limiting examples, at least one of the materials may include at least one of F and Si. In some non-limiting examples, the at least one common element may include, but is not limited to, at least one of F and Si. In some non-limiting examples, the at least one common substructure may include, but is not limited to, at least one of a fluorocarbon, a fluoroalkyl, and a siloxy group.

[0756] In some non-limiting examples, providing a patterned coating 110 including a host that tends to act as a NIC but does not exhibit any significant photoluminescent response and a dopant that does not tend to act as a NIC but exhibits a significant photoluminescent response can provide a significant photoluminescent response while tending to act as a NIC.

[0757] Category 4: Dopants form heterostructures to produce NPs

[0758] In some non-limiting examples, the patterned coating 110 may be doped with another material that may act as a seed (foreign species) to provide at least one nucleation site for the deposited material 631 to form at least one NP thereon, including but not limited to due to at least one of the patterned material 511 used and the deposition environment.

[0759] In some non-limiting examples, such other materials may include materials containing one of a metallic element and a non-metallic element (such as, but not limited to, at least one of O, S, N, and C, the presence of which may have been a trace contaminant in at least one of the source material, the equipment used for deposition, and the vacuum chamber environment).

[0760] In some non-limiting examples, such other materials (including but not limited to elemental materials) may be considered dopants, wherein the patterned coating 110 doped with the other materials may be considered a host.

[0761] In some non-limiting examples, such other materials may be deposited at a layer thickness that is a fraction of a monolayer to avoid forming its seal coating 140. In some non-limiting examples, the deposition of such other materials may tend to be spaced apart in a lateral direction to form discrete nucleation sites for the deposited material 631.

[0762] In some non-limiting examples, such other materials may include NPC 820 .

[0763] A person of ordinary skill in the relevant art will understand that, in some non-limiting examples, a dopant that falls into this category as a material that can act as a seed to promote the formation of at least one nucleation site for the deposited material 631 to form at least one NP thereon may also fall into one of the aforementioned categories.

[0764] Patterning of implanted and electrode materials

[0765] In some non-limiting examples, the patterned coating 110 can be used to affect the propensity of a vapor flux 632 of a deposition material 631 as a seal coating 140 is deposited thereon, the deposition material 631 including at least one of an injection material and an electrode material. In some non-limiting examples, the injection material can be an electron injection material, and the electrode material can be a cathode material.

[0766] In some non-limiting examples, the injection material may include at least one of: at least one metal and at least one metal fluoride. In some non-limiting examples, the injection material may include lithium quinolinate (Liq). In some non-limiting examples, the at least one metal of the injection material may include at least one of: a metal halide, a metal oxide, and a lanthanide metal. In some non-limiting examples, the metal halide may include an alkali metal halide. In some non-limiting examples, the metal halide may include at least one of: Li 2 In some non-limiting examples, the at least one metal fluoride of the implanted material may include a fluoride of at least one of: an alkali metal, an alkaline earth metal, and a rare earth metal. In some non-limiting examples, the at least one metal fluoride of the implanted material may be at least one of: CsF, LiF, potassium fluoride, rubidium fluoride, sodium fluoride, beryllium fluoride, magnesium fluoride, calcium fluoride, strontium fluoride, barium fluoride, scandium fluoride, neodymium fluoride, ytterbium fluoride; yttrium fluoride, erbium fluoride, lanthanum fluoride, samarium fluoride, terbium fluoride, and thulium fluoride. In some non-limiting examples, the implanted material may include a mixture of at least one metal of the implanted material and at least one metal fluoride of the implanted material. In some non-limiting examples, the mixture may have a composition range of the metal of the implanted material to the metal fluoride of the implanted material between about 1:10-10:1. In some non-limiting examples, the metal of the implanted material to the metal fluoride of the implanted material composition may be about 1:1. In some non-limiting examples, the metal fluoride of the overlying material may be substantially the same as the metal fluoride of the implanted material.

[0767] In some non-limiting examples, it may be desirable for the patterned coating 110 to be able to pattern the implant material and the electrode material. In some non-limiting examples, in the EIL 339 ( Figure 3 ) and a cathode are sequentially deposited to form a layered device structure, it may be necessary to inhibit the deposition of the EIL 339 and the cathode sealing coating 140 in a portion of the device 100, which in a non-limiting example may correspond to the second portion 102 of the device 100, to allow EM radiation (including but not limited to light) to be transmitted through the device 100 in the second portion 102.

[0768] Example

[0769] To determine whether the patterned coating 110 can be used to pattern given corresponding implant materials and electrode materials, the following experiments were performed.

[0770] A series of samples were fabricated by depositing an approximately 20 nm thick layer of electron transport material in vacuum and then depositing a patterned coating 110 with different compositions thereon.

[0771] For each sample, the exposed layer surface 11 of the patterned coating 110 thus formed is then subjected to an open mask deposition of the implanted material, followed by an open mask deposition of the electrode material. For each sample, the implanted material is selected from Yb and Yb:LiF (volume ratio 1:1), and the electrode material is MgAg (volume ratio 1:9). The reference thickness of the implanted material is different for each sample, while the reference thickness of the electrode material is 15 nm for each sample. After the open mask deposition of the implanted material and the electrode material, an approximately 50 nm thick overlying layer comprising an organic material (which may be a HTL material in some non-limiting examples) is deposited. Once the sample is manufactured, an EM transmittance measurement is performed to determine the amount of deposited material 631 present on the exposed layer surface 11 of the patterned coating 110.

[0772] As described above, the decrease in EM transmittance is generally positively correlated with the amount of deposited material 631 condensed on the patterned coating 110 .

[0773] The reduction in transmittance at 650 nm and 950 nm wavelengths was measured and summarized in Table 11:

[0774] Table 11

[0775]

[0776] The transmittance reduction (%) for each sample in Table 11 was determined by measuring the EM transmittance through each sample and comparing the transmittance to a reference sample in which no injection of material and exposure of the electrode material to vapor flux 632 occurred. The transmittance reduction is expressed as a percentage.

[0777] It can be seen that while the sample substantially including only example material 8 exhibits a substantially high transmittance reduction of at least about 59% at a wavelength of 950 nm, for various implanted material configurations, other samples in which patterned coating 110 is formed by doping example material 8 (including but not limited to example material 12) with a dopant exhibit at least the same deposition contrast as example material 8, such that such samples exhibit a substantially smaller transmittance reduction.

[0778] In some non-limiting examples, a sample substantially including one of example material 12 and example material 11 exhibits at least the same deposition contrast as example material 8, such that such patterned coating 110 exhibits substantially less transmittance reduction. In some non-limiting examples, a sample in which the implanted material is one of Yb, Yb:LiF, and LiF / Yb and the thickness of LiF does not exceed about 0.9 nm exhibits substantially low transmittance reduction at a wavelength of 950 nm, including but not limited to not more than about 10%. In some non-limiting examples, such patterned materials may have applicability in some scenarios for inhibiting deposition of a closed coating 140 of implanted material and electrode material in the second portion 102 of the device 100, such that EM radiation in the NIR spectrum (which may have applicability in facial recognition in some non-limiting examples) may be transmitted through the device 100 without significant attenuation.

[0779] In order to analyze the particle structure 160 deposited on the exposed layer surface 11 of the patterned coating 110, the following samples were prepared:

[0780] An approximately 40 nm thick patterned coating 110 of example material 12 was deposited on a silicon substrate 10. The patterned coating 110 was exposed to a vapor flux 632 of Yb:LiF (volume ratio 1:1) until a reference thickness of 1 nm was reached, and then exposed to a vapor flux 632 of MgAg (volume ratio 1:9) until a reference thickness of 10 nm was reached. The sample was analyzed by SEM to image the particle structure 160 formed on the exposed layer surface 11 of the patterned coating 110. By analysis of the SEM micrographs, the sample exhibited a total surface coverage of 14.4%, an average feature size of 27.6 nm, a dispersion of 1.93, a numerical average of particle diameter of 30.5 nm, and a size average of particle diameter of 42.4 nm. Its SEM micrograph is shown in FIG. Figure 2 shown.

[0781] Optoelectronic devices

[0782] Figure 3 is a simplified block diagram of a portrait orientation of an example optoelectronic device 300 according to the present disclosure, which in some non-limiting examples may be an electroluminescent device 300. In some non-limiting examples, the device 300 may be an OLED.

[0783] The device 300 may include a substrate 10 on which is disposed a front panel 301 including a plurality of layers, namely a first electrode 320, at least one semiconducting layer 330, and a second electrode 340. In some non-limiting examples, the front panel 301 may provide a mechanism for at least one of: emitting EM radiation (including but not limited to photons) and manipulating the emitted EM radiation.

[0784] In some non-limiting examples, the various coatings of such a device 300 may be formed by a vacuum-based deposition process.

[0785] In some non-limiting examples, the second electrode 340 may partially extend over the patterned coating 110 in the transition region 345 .

[0786] In some non-limiting examples, the deposited layer 130 may be composed of at least one granular structure 150 of a discontinuous layer 160 of a material (deposited material 631) of which the discontinuous layer 160 is composed. d The patterned coating 110 may act as a particle structure in the transition region 345 p In some non-limiting examples, such discontinuous layer 160 may form at least a portion of second electrode 340.

[0787] In some non-limiting examples, device 300 may be electrically coupled to power source 304. When so coupled, device 300 may emit EM radiation (including but not limited to photons) as described herein.

[0788] substrate

[0789] In some non-limiting examples, the substrate 10 may include a bottom substrate 315. In some non-limiting examples, the bottom substrate 315 may be formed of a material suitable for its use, including but not limited to at least one of the following: inorganic materials, including but not limited to at least one of the following: Si, glass, metal (including but not limited to metal foil), sapphire and other inorganic materials, and organic materials, including but not limited to polymers, including but not limited to at least one of the following: polyimide and Si-based polymers. In some non-limiting examples, the bottom substrate 315 may be one of the following: rigid or flexible. In some non-limiting examples, the substrate 10 may be defined by at least one flat surface. In some non-limiting examples, the substrate 10 may have at least one exposed layer surface 11 of the remaining front panel 301 components of the support device 300, which components include but are not limited to at least one of the first electrode 320, at least one semiconductive layer 330 and the second electrode 340.

[0790] In some non-limiting examples, such a surface may be at least one of an organic surface and an inorganic surface.

[0791] In some non-limiting examples, in addition to the base substrate 315, the substrate 10 may also include at least one additional of the following supported on the exposed layer surface 11 of the base substrate 315: at least one of an organic and inorganic layer (not shown and not specifically described herein).

[0792] In some non-limiting examples, such additional layers may include at least one organic layer, which may at least one of include, replace, and supplement at least one of semiconductive layers 330 .

[0793] In some non-limiting examples, such additional layers may include at least one inorganic layer, which may include at least one electrode, which in some non-limiting examples may be at least one of: including, replacing, and supplementing at least one of the first electrode 320 and the second electrode 340.

[0794] Backplane and the TFT structure it contains

[0795] In some non-limiting examples, such additional layers may include a backplate 302. In some non-limiting examples, the backplate 302 may include at least one of: power circuitry and switching elements for driving the device 300, including but not limited to at least one of: at least one electronic TFT structure 306 and at least one component thereof that may be formed by a photolithographic process.

[0796] In some non-limiting examples, the backplate 302 of the substrate 10 may include at least one electronic device, including but not limited to an optoelectronic component, including but not limited to one of a transistor, a resistor, and a capacitor, such as those components that may support the device 300 being used as one of an active matrix and a passive matrix device 300. In some non-limiting examples, such a structure may be a thin film transistor (TFT) structure 306.

[0797] Non-limiting examples of the TFT structure 306 include one of: top gate, bottom gate, n-type, and p-type TFT structures 306. In some non-limiting examples, the TFT structure 306 may incorporate one of: amorphous Si (a-Si), indium gallium zinc oxide (IGZO), and low temperature polycrystalline Si (LTPS).

[0798] First electrode

[0799] The first electrode 320 may be deposited over the substrate 10. In some non-limiting examples, the first electrode 320 may be electrically coupled to at least one of a terminal of the power source 304 and ground. In some non-limiting examples, the first electrode 320 may be so coupled via at least one drive circuit, which in some non-limiting examples may incorporate at least one TFT structure 306 in the backplate 302 of the substrate 10.

[0800] In some non-limiting examples, the first electrode 320 may include one of an anode and a cathode. In some non-limiting examples, the first electrode 320 may be an anode.

[0801] In some non-limiting examples, the first electrode 320 may be formed by depositing at least one thin conductive film over (a portion of) the substrate 10. In some non-limiting examples, there may be a plurality of first electrodes 320 disposed in a spaced arrangement in a lateral direction of the substrate 10. In some non-limiting examples, at least one of these at least one first electrode 320 may be deposited over (a portion of) a TFT insulating layer 307 disposed in a spaced arrangement in a lateral direction. If so, in some non-limiting examples, at least one of such at least one first electrode 320 may extend through an opening of the corresponding TFT insulating layer 307 to electrically couple with an electrode of the TFT structure 306 in the backplane 302.

[0802] In some non-limiting examples, at least one of the at least one first electrode 320 and at least one of its at least one thin film may include various materials, including but not limited to at least one metal material, including but not limited to at least one of magnesium (Mg), aluminum (Al), calcium (Ca), zinc (Zn), silver (Ag), cadmium (Cd), barium (Ba) and ytterbium (Yb), including but not limited to alloys containing any of such materials, at least one metal oxide, including but not limited to TCO, including but not limited to ternary compositions, such as but not limited to at least one of FTO, IZO and ITO, in different proportions, including but not limited to a combination of any multiple of them in at least one layer, wherein any at least one layer may be but not limited to a thin film.

[0803] Second electrode

[0804] The second electrode 340 can be deposited over the at least one semiconductive layer 330. In some non-limiting examples, the second electrode 340 can be electrically coupled to at least one of a terminal of the power source 304 and ground. In some non-limiting examples, the second electrode 340 can be so coupled through at least one drive circuit, which in some non-limiting examples can be combined with at least one TFT structure 306 in the back plate 302 of the substrate 10.

[0805] In some non-limiting examples, the second electrode 340 may include one of an anode and a cathode. In some non-limiting examples, the second electrode 340 may be a cathode.

[0806] In some non-limiting examples, the second electrode 340 may be formed by depositing a deposition layer 130 (in some non-limiting examples as at least one thin film) over (a portion of) the at least one semiconductive layer 330. In some non-limiting examples, there may be a plurality of second electrodes 340 disposed laterally upward of the at least one semiconductive layer 330 in a spatial arrangement.

[0807] In some non-limiting examples, at least one second electrode 340 may include various materials, including but not limited to: at least one metal material, including but not limited to at least one of Mg, Al, Ca, Zn, Ag, Cd, Ba, and Yb, including but not limited to alloys including at least one of any of such materials, at least one metal oxide, including but not limited to TCO, including but not limited to ternary compositions such as but not limited to at least one of FTO, IZO, and ITO, including but not limited to zinc oxide (ZnO) in different proportions and other oxides including at least one of In and Zn in at least one layer, and at least one non-metal material, any at least one of which may be but not limited to a thin conductive film. In some non-limiting examples, for Mg:Ag alloys, such alloy compositions may be in the range of between about 1:9-9:1 by volume.

[0808] In some non-limiting examples, deposition of the second electrode 340 may be performed using one of an open mask and a maskless deposition process.

[0809] In some non-limiting examples, the second electrode 340 can include multiple such coatings. In some non-limiting examples, such coatings can be different coatings disposed on top of each other.

[0810] In some non-limiting examples, the second electrode 340 may include a Yb / Ag double-layer coating. In some non-limiting examples, such a double-layer coating may be formed by depositing a Yb coating and then depositing an Ag coating. In some non-limiting examples, the thickness of such an Ag coating may exceed the thickness of the Yb coating.

[0811] In some non-limiting examples, the second electrode 340 may be a multi-coated electrode 340 including a plurality of one of: a metal coating and an oxide coating.

[0812] In some non-limiting examples, the second electrode 340 may include fullerenes and Mg.

[0813] In some non-limiting examples, such a coating can be formed by depositing a fullerene coating and then depositing a Mg coating. In some non-limiting examples, the fullerenes can be dispersed in the Mg coating to form a fullerene-containing Mg alloy coating. Non-limiting examples of such coatings are described in at least one of the following: U.S. Patent Application Publication No. 2015 / 0287846 published on October 8, 2015 and PCT International Application No. PCT / IB2017 / 054970 filed on August 15, 2017 and published on February 22, 2018 as WO2018 / 033860.

[0814] Semiconducting layer

[0815] In some non-limiting examples, at least one semiconductive layer 330 may include multiple layers 331, 333, 335, 337, and 339. In some non-limiting examples, any one of these layers may be in the form of a thin film and arranged in a stacked configuration, which may include but is not limited to at least one of a hole injection layer (HIL) 331, a hole transport layer (HTL) 333, an emission layer (EML) 335, an electron transport layer (ETL) 337, and an electron injection layer (EIL) 339.

[0816] In some non-limiting examples, the at least one semiconductive layer 330 may form a "tandem" structure including a plurality of EMLs 335. In some non-limiting examples, such a tandem structure may further include at least one charge generation layer (CGL).

[0817] One of ordinary skill in the relevant art will readily appreciate that the structure of device 300 may be changed by one of: omitting and combining at least one of semiconducting layers 331 , 333 , 335 , 337 , 339 .

[0818] In some non-limiting examples, any of the layers 331, 333, 335, 337, 339 of the at least one semiconductive layer 330 may include any number of sub-layers. In some non-limiting examples, any of such layers 331, 333, 335, 337, 339 (including but not limited to their sub-layers) may include each of the following: a mixture and a composition gradient. In some non-limiting examples, although not shown, the device 300 may include at least one layer including one of an inorganic material and an organometallic material, and may not necessarily be limited to a device 300 consisting only of an organic material. In some non-limiting examples, the device 300 may include at least one quantum dot (QD).

[0819] In some non-limiting examples, the HIL 331 may be formed using a hole injection material, which in some non-limiting examples may facilitate hole injection by the anode.

[0820] In some non-limiting examples, the HTL 333 may be formed using a hole transport material, which in some non-limiting examples may exhibit high hole mobility.

[0821] In some non-limiting examples, the ETL 337 may be formed using an electron transport material, which in some non-limiting examples may exhibit high electron mobility.

[0822] In some non-limiting examples, the EIL 339 can be formed using an electron injection material, which in some non-limiting examples can facilitate electron injection by the cathode.

[0823] In some non-limiting examples, at least one EML 335 can be formed, including but not limited to, by doping a host material with at least one emitter material. In some non-limiting examples, the emitter material can be at least one of a fluorescent emitter material, a phosphorescent emitter material, and a thermally activated delayed fluorescence (TADF) emitter material.

[0824] In some non-limiting examples, the emitter material may be one of an R (red) emitter material, a G (green) emitter material, and a B (blue) emitter material, i.e., an emitter material that facilitates emission of R (red), G (green), and B (blue) EM radiation, respectively.

[0825] In some non-limiting examples, the device 300 may be an OLED, wherein the at least one semiconductive layer 330 may include at least one EML 335 interposed between the conductive thin film electrodes 320, 340, whereby, when a potential difference is applied therebetween, holes may be injected into the at least one semiconductive layer 330 through the anode and electrons may be injected into the at least one semiconductive layer 330 through the cathode to migrate toward the at least one EML 335 and combine to emit EM radiation in the form of photons.

[0826] In some non-limiting examples, the device 300 may be an electroluminescent QD device 300, wherein the at least one semiconductive layer 330 may include an active layer having at least one QD. When current is supplied to the first electrode 320 and the second electrode 340 by a power source, EM radiation (including but not limited to in the form of photons) may be emitted from the active layer including the at least one semiconductive layer 330 therebetween.

[0827] In some non-limiting examples, including where device 300 includes a lighting panel, the entire lateral orientation of device 300 may correspond to a single emitting element. Figure 3 The substantially planar cross-sectional profile shown in FIG. 300 may extend substantially along the entire lateral direction of the device 300, such that EM radiation is emitted from the device substantially along the entire lateral extent of the device 300. In some non-limiting examples, such a single emitting element may be driven by a single driving circuit of the device 300.

[0828] In some non-limiting examples, including where the device 300 includes a display module, the lateral orientation of the device 300 can be subdivided into multiple emission regions 310 of the device 300, wherein within each of the emission regions 310, the longitudinal orientation of the device structure 300 can be such that EM radiation is emitted therefrom when powered.

[0829] A person skilled in the relevant art will readily appreciate that the structure of the device 300 may be modified by introducing at least one additional layer (not shown) at an appropriate location within the stack of at least one semiconducting layer 330, the additional layer including but not limited to at least one of the following: a hole blocking layer (HBL) (not shown), an electron blocking layer (EBL) (not shown), a charge transport layer (CTL) (not shown), and a charge injection layer (CIL) (not shown).

[0830] In some non-limiting examples, the patterned coating 110 may be formed simultaneously with the at least one semiconductive layer 330. In some non-limiting examples, at least one material used to form the patterned coating 110 may also be used to form the at least one semiconductive layer 330. In some non-limiting examples, the ETL 337 of the at least one semiconductive layer 330 may be the patterned coating 110 that may be deposited in the first portion 101 and the second portion 102 during the deposition of the at least one semiconductive layer 330. The EIL 339 may then be selectively deposited in the emission region 310 of the second portion 102 over the ETL 337, such that the exposed layer surface 11 of the ETL 337 in the first portion 101 may be substantially free of the EIL 339. The exposed layer surface 11 of the EIL 339 in the emission region 310 and the exposed layer surface of the ETL 337 serving as the patterned coating 110 may then be exposed to a vapor flux 632 of a deposition material 631 to form a closed coating 140 of the deposition layer 130 on the EIL 339 in the second portion 102 and a discontinuous layer 160 of the deposition material 631 on the EIL 337 in the first portion 101. In such non-limiting examples, several stages for manufacturing the device 300 may be reduced.

[0831] Launch area

[0832] In some non-limiting examples, including where the OLED device 300 may include a display module, the lateral orientation of the device 300 may be subdivided into multiple emission regions 310 of the device 300, wherein within each of the emission regions 310, the longitudinal orientation of the device 300 structure may be such that EM radiation is emitted therefrom when power is supplied.

[0833] In some non-limiting examples, each emissive region 310 may have an associated pair of electrodes 320, 340 (one of which may serve as an anode and the other of which may serve as a cathode) and at least one semiconductive layer 330 therebetween. Such emissive regions 310 may emit EM radiation at a given wavelength spectrum and may correspond to pixels 1115 ( Fig.11) and one of its sub-pixels 316. In some non-limiting examples, multiple sub-pixels 316 that each correspond to EM radiation of a different wavelength (range) and emit the EM radiation may collectively form a pixel 1115.

[0834] In some non-limiting examples, the wavelength spectrum may correspond to, but is not limited to, colors in the visible spectrum. Due to the different wavelengths (ranges) involved, EM radiation of a first wavelength (range) emitted by a first sub-pixel 316 of a pixel 1115 may perform differently than EM radiation of a second wavelength (range) emitted by a second sub-pixel 316 of the pixel 1115.

[0835] In some non-limiting examples, the active region 308 of each emission region 310 may be defined as being bounded in the longitudinal direction by the first electrode 320 and the second electrode 340, and in the lateral direction by the presence of each of the first electrode 320, the second electrode 340, and at least one semiconductive layer 330 therebetween ("emission region layer"), i.e., the first electrode 320, the second electrode 340, and at least one semiconductive layer 330 therebetween overlap laterally.

[0836] A person of ordinary skill in the relevant art will appreciate that the lateral orientation of the emission region 310, and therefore the lateral boundaries of the active region 308, may not correspond to the entire lateral orientation of at least one of the first electrode 320 and the second electrode 340. Rather, the lateral orientation of the emission region 310 may not substantially exceed the lateral extent of the first electrode 320 and the second electrode 340. In some non-limiting examples, at least one of the following is: some portions of the first electrode 320 may be covered by the PDL 309, and some portions of the second electrode 340 may not be disposed on the at least one semiconductive layer 330, such that in at least one scenario, the emission region 310 may be laterally constrained.

[0837] In some non-limiting examples, at least one of the various emission region layers may be deposited by deposition of a corresponding constituent emission region layer material.

[0838] In some non-limiting examples, some of the at least one semiconductive layer 330 may be arranged in a desired pattern through vapor deposition of corresponding emission region layer materials through a fine metal mask (FMM) having holes corresponding to desired locations where the emission region layer material is to be deposited. In some non-limiting examples, multiple emission region layers may be arranged in a similar pattern, including but not limited to, by depositing their corresponding emission region layer materials in their corresponding deposition stages using an FMM.

[0839] In some non-limiting examples, as discussed herein, the emission region layer material corresponding to at least one of the first electrode 320 and the second electrode 340 (including but not limited to the second electrode 340) may be deposited by pre-depositing the patterned coating 110 by vapor deposition of a patterned material by FMM, the fine metal mask having holes corresponding to the desired locations where the patterned coating 110 is to be deposited, and then depositing the emission region layer material using one of an open mask and a maskless deposition process.

[0840] In some non-limiting examples, the patterned coating 110 may be adapted to influence the propensity of the vapor flux 632 of a deposition material 631 (of which the emission region layer material may be composed) to be deposited on the exposed layer surface, including but not limited to an initial adhesion probability for the deposition of the deposition material 631 that does not exceed an initial adhesion probability for the deposition of the deposition material 631 on the exposed layer surface 11 of at least one semiconductive layer 330.

[0841] In some non-limiting examples, the first electrode 320 may be disposed on the exposed layer surface 11 of the device 300, and in some non-limiting examples, disposed in at least a portion of the lateral direction of the emissive region 310. In some non-limiting examples, at least inward of the lateral direction of the emissive region 310 of the (sub)pixel 1115 / 316, when the first electrode 320 is deposited, the exposed layer surface 11 may include a TFT insulating layer 307 of various TFT structures 306 constituting a drive circuit for the emissive region 310 corresponding to a single display (sub)pixel 1115 / 316.

[0842] In some non-limiting examples, the TFT insulating layer 307 may be formed with an opening extending therethrough to allow the first electrode 320 to be electrically coupled to TFT electrodes including, but not limited to, a TFT drain electrode.

[0843] A person skilled in the relevant art will appreciate that the driving circuit may include multiple TFT structures 306. Figure 3 In order to simplify the description, only one TFT structure 306 may be shown, but a person skilled in the relevant art will understand that such a TFT structure 306 may represent at least one of the following: a plurality of such TFT structures constituting a driving circuit and at least one component thereof.

[0844] In some non-limiting examples, an end of the first electrode 320 may be covered by at least one PDL 309 such that a portion of at least one PDL 309 may be interposed between the first electrode 320 and at least one semiconductive layer 330 such that such an end of the first electrode 320 may be located outside the active region 308 of the associated emission region 310.

[0845] In some non-limiting examples, some portions of the second electrode 340 may not be disposed directly on the at least one semiconductive layer 330, such that the emission region 310 may thereby be laterally confined.

[0846] In some non-limiting examples, at least one semiconductive layer 330 (including but not limited to at least one of its layers 331, 333, 335, 337, 339) may be deposited on the exposed layer surface 11 of the device 300, including at least a portion of the lateral orientation of such an emission region 310 of the (sub)pixel 1115 / 316. In some non-limiting examples, at least inwardly of the lateral orientation of the emission region 310 of the (sub)pixel 1115 / 316, such exposed layer surface 11 may include the first electrode 320 when such at least one semiconductive layer 330 is deposited.

[0847] In some non-limiting examples, the at least one semiconductive layer 330 may also extend beyond the lateral orientation of the emissive region 310 of the (sub)pixel 1115 / 316 and at least partially inwardly of the lateral orientation of the surrounding non-emissive region 311. In some non-limiting examples, such exposed layer surface 11 of such surrounding non-emissive region 311 may include the PDL 309 when the at least one semiconductive layer 330 is deposited.

[0848] In some non-limiting examples, the second electrode 340 may be disposed above the exposed layer surface 11 of the device 300, including at least a portion of the lateral direction of the emission region 310 of the (sub) pixel 1115 / 316. In some non-limiting examples, at least inwardly of the lateral direction of the emission region 310 of the (sub) pixel 1115 / 316, such exposed layer surface 11 may include at least one semiconductive layer 330 when the second electrode 320 is deposited.

[0849] In some non-limiting examples, the second electrode 340 may also extend beyond the lateral direction of the emission region 310 of the (sub)pixel 1115 / 316 and at least partially inward of the lateral direction of the surrounding non-emitting region 311. In some non-limiting examples, the exposed layer surface 11 of such surrounding non-emitting region 311 may include the PDL 309 when the second electrode 340 is deposited.

[0850] In some non-limiting examples, the second electrode 340 can extend over a majority of the lateral directions of the surrounding non-emitting region 311 , including but not limited to substantially all.

[0851] In some non-limiting examples, the various emission regions 310 of the device 300 may be arranged in a lateral pattern. In some non-limiting examples, the pattern may extend along a first lateral direction. In some non-limiting examples, the pattern may also extend along a second lateral direction, which in some non-limiting examples may extend at an angle relative to the first lateral direction. In some non-limiting examples, the second lateral direction may be substantially perpendicular to the first lateral direction. In some non-limiting examples, the pattern may have a plurality of elements in such a pattern, each element being characterized by at least one of its characteristics, including but not limited to at least one of the following: the wavelength of the EM radiation emitted by its emission region 310, the shape of such emission region 310, the dimension (along at least one of the first and second lateral directions), the orientation (relative to at least one of the first and second lateral directions), and the spacing from the previous element in the pattern (relative to at least one of the first and second lateral directions). In some non-limiting examples, the pattern may repeat in at least one of the first and second lateral directions.

[0852] In some non-limiting examples, each individual emission region 310 of device 300 may be associated with and driven by a corresponding drive circuit within backplane 302 of device 300 for driving the OLED structure for the associated emission region 310. In some non-limiting examples, including but not limited to, where the emission regions 310 may be arranged in a regular pattern extending in both a first (row) lateral direction and a second (column) lateral direction, there may be a signal line in backplane 302 corresponding to each row of emission regions 310 extending in the first lateral direction, and a signal line corresponding to each column of emission regions 310 extending in the second lateral direction. In such non-limiting configuration, the signal on the row selection line can excite the corresponding gate of the switching TFT structure 306 electrically coupled thereto, and the signal on the data line can excite the corresponding source of the switching TFT structure 306 electrically coupled thereto, so that the signal on the row selection line / data line pair can be electrically coupled to and excite the anode of the OLED structure of the emission region 310 associated with such pair through the positive terminal of the power supply, thereby causing photons to be emitted therefrom, and its cathode is electrically coupled to the negative terminal of the power supply.

[0853] In some non-limiting examples, a single display pixel 1115 may include three sub-pixels 316, which in some non-limiting examples may correspond to a single sub-pixel 316 for each of three colors, including but not limited to at least one of the following: R (red) sub-pixel 316 R , G (green) sub-pixel 316 G and B (blue) sub-pixel 316 BIn some non-limiting examples, a single display pixel 1115 may include four sub-pixels 316, each corresponding to a single sub-pixel 316 of each of two colors (including but not limited to R (red) sub-pixel 316 R and B (blue) sub-pixel 316 B and two sub-pixels 316 of a third color (including but not limited to the G (green) sub-pixel 316 G In some non-limiting examples, a single display pixel 1115 may include four sub-pixels 316, which in some non-limiting examples may correspond to a single sub-pixel 316 for each of three colors, including but not limited to at least one of the following: R (red) sub-pixel 316 R , G (green) sub-pixel 316 G , B (blue) sub-pixel 316 B and the fourth W (white) sub-pixel 316 W .

[0854] In some non-limiting examples, the emission spectrum of the EM radiation emitted by a given (sub)pixel 1115 / 316 may correspond to a color that may represent the (sub)pixel 1115 / 316. In some non-limiting examples, the wavelength of the EM radiation may not correspond to such a color, but further processing may be performed in a manner apparent to one of ordinary skill in the relevant art to convert the wavelength to such a corresponding wavelength.

[0855] In some non-limiting examples, the emission spectrum of the EM radiation emitted by a given (sub)pixel 1115 / 316 (corresponding to the color that can represent the (sub)pixel 1115 / 316) can be related to at least one of the following: the structure and composition of at least one semiconductive layer 330 (including but not limited to at least one EML 335) extending between its first electrode 320 and second electrode 340. In some non-limiting examples, at least one EML 335 of at least one semiconductive layer 330 can be adjusted to promote the emission of EM radiation having an emission spectrum corresponding to the color that can represent the (sub)pixel 1115 / 316. In some non-limiting examples, the R (red) subpixel 316 R The EML 335 may include an R (red) EML material, including but not limited to a host material doped with an R (red) emitter material. In some non-limiting examples, the G (green) sub-pixel 316 G The EML 335 of the embodiment may include a G (green) EML material, including but not limited to a host material doped with a G (green) emitter material. In some non-limiting examples, the B (blue) sub-pixel 316 B The EML 335 may include a B (blue) EML material, including but not limited to a host material doped with a B (blue) emitter material.

[0856] In some non-limiting examples, at least one characteristic of at least one of at least one semiconductive layer 330 (including but not limited to HIL 331, HTL 333, EML 335, ETL 337, and EIL 339) in the longitudinal direction (including but not limited to its presence, its absence, its thickness, its composition, and its order) may be selected to facilitate emission of EM radiation therefrom, the EM radiation having a wavelength spectrum corresponding to a color that can represent a given sub-pixel 316, the color including but not limited to at least one of R (red), G (green), and B (blue).

[0857] In some non-limiting examples, according to the additive color model, the emission of EM radiation having a wavelength spectrum corresponding to multiple colors selected from R (red), G (green), and B (blue) may facilitate the emission of EM radiation having a wavelength spectrum corresponding to different colors including, but not limited to, W (white) (red + green + blue), Y (yellow) (red + green), C (cyan) (green + blue), and M (magenta) (blue + red).

[0858] In some non-limiting examples, the exposed layer surface 11 of the device 100 may be exposed to a vapor flux 632 of a deposition material 631 , including but not limited to in one of an open mask and a maskless deposition process.

[0859] In some non-limiting examples, in at least a portion of the emission region 310 , at least one semiconductive layer 330 may be deposited over an exposed layer surface 11 of the device 300 , which in some non-limiting examples includes the first electrode 320 .

[0860] In some non-limiting examples, the exposed layer surface 11 of the device 300 (which may include at least one semiconductive layer 330 in some non-limiting examples) may be exposed to a vapor flux 512 of a patterned material 511, including but not limited to using a shadow mask 515, to form a patterned coating 110 in the first portion 101. Whether or not a shadow mask 515 is employed, the patterned coating 110 may be substantially confined to the signal-transmissive region 312 in its lateral orientation.

[0861] In some non-limiting examples, the lateral orientation of at least one emission region 310 may extend across and include at least one TFT structure 306 associated therewith for driving the emission region 310 along data and scan lines (not shown), which in some non-limiting examples may be formed from at least one of Cu and TCO.

[0862] In some non-limiting examples, the (sub) pixels 1115 / 316 may be arranged side by side. In some non-limiting examples, the (color) order of the sub pixels 316 of the first pixel 1115 may be the same as the (color) order of the sub pixels 316 of the second pixel 1115. In some non-limiting examples, the (color) order of the sub pixels 316 of the first pixel 1115 may be different from the (color) order of the sub pixels 316 of the second pixel 1115.

[0863] In some non-limiting examples, sub-pixels 316 of adjacent pixels 1115 may be aligned in at least one of a row arrangement, a column arrangement, and an array arrangement.

[0864] In some non-limiting examples, the first at least one sub-pixel in the rows and columns of aligned sub-pixels 316 of the adjacent pixel 1115 may include sub-pixels 316 of one of the same and different colors.

[0865] In some non-limiting examples, the first at least one subpixel in the rows and columns of aligned subpixels 316 of the adjacent pixel 1115 may be aligned with at least one of the second at least one subpixel and the third at least one subpixel in the rows and columns of aligned subpixels 316 of the adjacent pixel 1115.

[0866] In some non-limiting examples, the first at least one subpixel in the rows and columns of aligned subpixels 316 of the adjacent pixel 1115 may be one of: offset or misaligned with at least one of the second at least one subpixel and the third at least one subpixel in the rows and columns of aligned subpixels 316 of the adjacent pixel 1115.

[0867] In some non-limiting examples, the sub-pixels 316 of adjacent pixels 1115 of such first at least one sub-pixel, second at least one sub-pixel, and third at least one sub-pixel of at least one of the rows and columns may be arranged so that the corresponding sub-pixels 316 of each of the first at least one sub-pixel, second at least one sub-pixel, and third at least one sub-pixel of at least one of the rows and columns may have the same color.

[0868] In some non-limiting examples, the sub-pixels 316 of adjacent pixels 1115 of such first at least one sub-pixel, second at least one sub-pixel, and third at least one sub-pixel of at least one of the rows and columns may be arranged so that the corresponding sub-pixel 316 of each of the first at least one sub-pixel, second at least one sub-pixel, and third at least one sub-pixel of at least one of the rows and columns may have different colors.

[0869] In some non-limiting examples, in the display panel 400 ( Figure 4), at least one signal transmission area 312 may be disposed between the plurality of emission areas 310. In some non-limiting examples, at least one signal transmission area 312 may be disposed between adjacent (sub) pixels 1115 / 316. In some non-limiting examples, adjacent sub-pixels 316 surrounding at least one signal transmission area 312 may form a portion of the same pixel 1115. In some non-limiting examples, adjacent sub-pixels 316 surrounding at least one signal transmission area 312 may be associated with different pixels 1115.

[0870] In some non-limiting examples, regions of the closed coating 140 that may be substantially free of second electrode material (“cathode-free regions”), including but not limited to at least one signal-transmissive region 312, may, in some non-limiting examples, exhibit different optoelectronic properties than other regions, including but not limited to at least one emissive region 310. In some non-limiting examples, such cathode-free regions may, however, include some second electrode material, including but not limited to in the form of a discontinuous layer 160 of one of at least one particulate structure 150 and at least one instance of such particulate structure 150.

[0871] In some non-limiting examples, this can be accomplished by laser ablation of the second electrode material. However, in some non-limiting examples, laser ablation can produce a cloud of debris that can affect the vapor deposition process.

[0872] In some non-limiting examples, this can be achieved by using FMM to set a patterned coating 110 (which in some non-limiting examples can be a nucleation inhibition coating (NIC)) in a certain pattern on the exposed layer surface 11 of at least one semiconductive layer 330, and then depositing a deposition material 631 for forming the second electrode 340 on the exposed layer surface.

[0873] In some non-limiting examples, the patterned coating 110 may be adapted to influence the propensity of the vapor flux 632 of the deposition material 631 to be deposited on the exposed layer surface, including but not limited to an initial adhesion probability for the deposition of the deposition material 631 that does not exceed an initial adhesion probability for the deposition of the deposition material 631 on the exposed layer surface 11 of at least one semiconductive layer 330.

[0874] In some non-limiting examples, patterned coating 110 may be deposited in a pattern of first portion 101 that may correspond to a lateral orientation of, including but not limited to, at least some of signal transmissive regions in transmissive regions 312 .

[0875] In some non-limiting examples, the patterned coating 110 may be deposited in multiple stages, each stage using a different FMM that defines a different pattern within the first portion 101 , the multiple stages corresponding to different subsets of the signal-transmissive regions 312 , respectively.

[0876] In some non-limiting examples, after (all stages of) depositing the patterned coating 110, the display panel 400 may be subjected to a vapor flux 632 of a deposition material 631 in one of an open mask and a maskless deposition process to form a second electrode 340 for each of the emission regions 310 corresponding to the (sub)pixel 1115 / 316 in at least the laterally oriented second portion 102 but not in the laterally oriented first portion 101.

[0877] In some non-limiting examples, although not shown, the upper cladding layer 170 may be disposed on at least one of the second electrode 340 and the patterned coating 110. In some non-limiting examples, although not shown, the upper cladding layer 170 may be at least partially deposited across the lateral extent of the optoelectronic device 300, in some non-limiting examples, cover the second electrode 340 in the second portion 102, and in some non-limiting examples, at least partially cover the at least one particle structure 150 and form an interface with the patterned coating 110 at its exposed layer surface 11 in the first portion 101.

[0878] Non-emitting area

[0879] In some non-limiting examples, various emission regions 310 of the device 300 may be substantially surrounded and separated in at least one lateral direction by at least one non-emitting region 311, wherein at least one of the structure and configuration of the device 300 along the longitudinal orientation shown (without limitation) may be varied to substantially suppress the emission of EM radiation therefrom.

[0880] In some non-limiting examples, non-emitting regions 311 may include those regions that are substantially free of emitting regions 310 in a laterally oriented manner.

[0881] In some non-limiting examples, the longitudinal topology of the various layers of the at least one semiconductive layer 330 may be varied to define at least one emitting region 310 surrounded by at least one non-emitting region 311 (at least in one lateral direction).

[0882] A non-limiting example of an implementation of a longitudinal orientation of device 300 will now be described as applied to an emissive region 310 corresponding to a single display (sub)pixel 1115 / 316 of device 300. Although features of this implementation are shown as being specific to emissive region 310, one of ordinary skill in the relevant art will understand that in some non-limiting examples, more than one emissive region 310 may encompass common features.

[0883] In some non-limiting examples, the lateral orientation of the surrounding non-emitting region 311 may be characterized by the presence of a corresponding PDL 309 .

[0884] In some non-limiting examples, the thickness of the PDL 309 may increase from a minimum value at its end covering the first electrode 320 to a maximum value beyond the lateral extent of the first electrode 320. In some non-limiting examples, the thickness variation of at least one PDL 309 may define a valley shape centered at the emission region 310. In some non-limiting examples, the valley shape may constrain the field of view (FOV) of the EM radiation emitted by the emission region 310.

[0885] Although PDL 309 is generally shown herein as having a linearly inclined surface to form a valley-shaped configuration defining an emission region 310 surrounded thereby, a person of ordinary skill in the relevant art will understand that in some non-limiting examples, at least one of the shape, aspect ratio, thickness, width, and configuration of such PDL 309 may vary. In some non-limiting examples, PDL 309 may be formed with one of a substantially steep portion and a more gently inclined portion. In some non-limiting examples, such PDL 309 may be configured to extend substantially vertically away from the surface on which it is deposited, which surface may cover at least one edge of the first electrode 320. In some non-limiting examples, such PDL 309 may be configured to deposit at least one semiconductive layer 330 thereon by a solution processing technique (including but not limited to by printing, including but not limited to inkjet printing).

[0886] In some non-limiting examples, the PDL 309 may be deposited substantially over the TFT insulating layer 307, although as shown, in some non-limiting examples, the PDL 309 may also extend over at least a portion of the deposited first electrode 320 (including but not limited to its outer edge).

[0887] In some non-limiting examples, the lateral extent of at least one of the non-emission regions 311 may be at least the lateral extent of the emission region 310 interposed therebetween, and in some non-limiting examples exceed that lateral extent, including but not limited to being a multiple thereof.

[0888] In some non-limiting examples, the thickness of at least one PDL 309 in at least one signal transmission area 312, the thickness of (in certain non-limiting examples) at least one non-emissive area 311 ((these non-emissive areas are positioned between adjacent emissive areas 310, and in certain non-limiting examples, at least in areas laterally spaced therefrom)), and (in certain non-limiting examples; although not shown) the thickness of the TFT insulating layer 307 may all be reduced to increase at least one of the transmittance and the transmittance angle relative to and through the layers of the display panel 400 to facilitate transmission of EM radiation therethrough.

[0889] Display Panels and User Equipment

[0890] Now go to Figure 4 , which shows a cross-sectional view of an example layered optoelectronic device 300, such as a display panel 400. In some non-limiting examples, the display panel 400 may include a plurality of layers deposited on a substrate 10, the plurality of layers ending with an outermost layer forming a face 401 of the display panel. In some non-limiting examples, the display panel 400 may be a version of the device 300.

[0891] The face 401 of the display panel 400 may extend substantially along a plane defined by the lateral axis across its lateral orientation.

[0892] In some non-limiting examples, the face 401, and indeed the entire display panel 400, may serve as a face of a user device 410 through which at least one EM signal 431 may be exchanged at a non-zero angle relative to the plane of the face 401. In some non-limiting examples, the user device 410 may be a computing device 410 such as, but not limited to, a smartphone, a tablet, a laptop, an e-reader, and some other electronic devices 410 such as monitors, televisions, and smart devices 410, including but not limited to automotive displays, windshields, home appliances, and medical, commercial, and industrial devices 410.

[0893] In some non-limiting examples, face 401 may correspond to, and in some non-limiting examples match, at least one of body 420 and an opening 421 therein, within which at least one display lower member 430 may be received.

[0894] In some non-limiting examples, at least one display lower member 430 may be formed with the display panel 400 on a surface thereof opposite to the surface 401 , including but not limited to at least one of: integrally formed, and formed as an assembled module.

[0895] In some non-limiting examples, at least one hole 422 may be formed in the display panel 400 to allow at least one EM signal 431 to be exchanged through the face 401 of the display panel 400 at a non-zero angle with a plane defined by the lateral axes of the layers of the display panel 400 (including but not limited to the face 401 of the display panel 400), including but not limited to the accompanying layers.

[0896] In some non-limiting examples, the at least one aperture 422 may be understood to include one of the absence and thickness and reduction of at least one of the thickness and volume of a substantially opaque coating that is otherwise disposed across the display panel 400. In some non-limiting examples, the at least one aperture 422 may be embodied as a signal-transmissive region 312 as described herein.

[0897] However, at least one aperture 422 is embodied through which at least one EM signal 431 may pass such that it passes through the face 401. Thus, the at least one EM signal 431 may be considered to exclude any EM radiation that may extend along the plane defined by the lateral axis, including but not limited to any electrical current that may be conducted laterally through the display panel 400 across the at least one particulate structure 150.

[0898] Furthermore, one of ordinary skill in the relevant art will appreciate that the at least one EM signal 431 may be distinguished from the EM radiation itself, including, but not limited to, one of the following: the current and electric field generated thereby, because the at least one EM signal 431 may convey, alone or in conjunction with any of the other EM signals 431, some information content, including, but not limited to, an identifier by which the at least one EM signal 431 may be distinguished from the other EM signals 431. In some non-limiting examples, the information content may be conveyed by at least one of specifying, changing, and / or modulating at least one of the wavelength, frequency, phase, timing, bandwidth, resistance, capacitance, impedance, conductance, and / or other characteristics of the at least one EM signal 431.

[0899] In some non-limiting examples, the at least one EM signal 431 passing through the at least one hole 422 of the display panel 400 may include at least one photon and, in some non-limiting examples, may have a wavelength spectrum located, without limitation, within at least one of a visible spectrum, an IR spectrum, and a NIR spectrum. In some non-limiting examples, the at least one EM signal 431 passing through the at least one hole 422 of the display panel 400 may have a wavelength located, without limitation, within at least one of the IR and NIR spectra.

[0900] In some non-limiting examples, the at least one EM signal 431 passing through the at least one hole 422 of the display panel 400 may include ambient light incident thereon.

[0901] In some non-limiting examples, at least one EM signal 431 exchanged through at least one hole 422 of the display panel 400 may be at least one of: transmitted and received by at least one display lower member 430 .

[0902] In some non-limiting examples, at least one display lower component 430 may be sized to be at least a single signal transmissive region 312, but may b...

Claims

1. An optoelectronic device having a plurality of layers, each of the plurality of layers extending in a lateral direction, the optoelectronic device comprising: at least one emission region extending in the laterally facing first portion and comprising: a first electrode and a second electrode, the second electrode comprising an electrode material; at least one semiconductive layer, the at least one semiconductive layer being located between the first electrode and the second electrode; and an injection layer located between the at least one semiconducting layer and the second electrode and comprising an injection material; and a patterned coating extending in the laterally facing second portion at the first layer interface and adapted to affect a propensity for vapor flux of at least one of: the electrode material and the implant material to condense on the patterned coating; Wherein a distal layer interface of the patterned coating is substantially free of a closed coating of a material comprising at least one of: the electrode material and the implant material. 2 . The optoelectronic device according to claim 1 , wherein the injection layer has an average layer thickness of one of between about 0.5 nm-3 nm and 1 nm-2 nm. The optoelectronic device according to claim 1 , wherein the second electrode is a cathode, and the injection layer is an electron injection layer. 4 . The optoelectronic device according to claim 1 , wherein the electrode material comprises at least one of the following: magnesium (Mg), silver (Ag), and MgAg. 5 . The optoelectronic device of claim 1 , wherein the implant material comprises at least one of: at least one metal and at least one metal fluoride.

6. The optoelectronic device of claim 5, wherein the injection material comprises lithium quinolinate (Liq).

7. The optoelectronic device of claim 5, wherein the at least one metal of the implant material comprises at least one of: a metal halide, a metal oxide, and a lanthanide metal.

8. The optoelectronic device of claim 7, wherein the metal halide comprises an alkali metal halide.

9. The optoelectronic device of claim 7, wherein the metal halide comprises at least one of lithium oxide (Li2O), barium oxide (BaO), sodium chloride (NaCl), rubidium chloride (RbCl), rubidium iodide (RbI), potassium iodide (KI), and copper iodide (CuI).

10. The optoelectronic device of claim 7, wherein the lanthanide metal comprises ytterbium (Yb).

11. The optoelectronic device of claim 5, wherein the at least one metal fluoride of the implant material comprises a fluoride of at least one of: an alkali metal, an alkaline earth metal, and a rare earth metal.

12. The optoelectronic device of claim 5, wherein the at least one metal fluoride of the implant material is at least one of: cesium fluoride (CsF), lithium fluoride (LiF), potassium fluoride, rubidium fluoride, sodium fluoride, beryllium fluoride, magnesium fluoride, calcium fluoride, strontium fluoride, barium fluoride, scandium fluoride, neodymium fluoride, ytterbium fluoride; yttrium fluoride, erbium fluoride, lanthanum fluoride, samarium fluoride, terbium fluoride, and thulium fluoride.

13. The optoelectronic device of claim 5, wherein the implant material comprises a mixture of the at least one metal of the implant material and the at least one metal fluoride of the implant material.

14. The optoelectronic device of claim 13, wherein the mixture has a composition range of the metal of the implant material to the metal fluoride of the implant material between about 1:10-10:

1.

15. The optoelectronic device of claim 14, wherein the composition of the metal of the implant material to the metal fluoride of the implant material is about 1:

1.

16. The optoelectronic device of claim 1, wherein the first layer interface is a distal layer interface of the at least one semiconducting layer.

17. The optoelectronic device of claim 1, wherein the patterned coating comprises a seal coating along at least a portion of the first layer interface.

18. The optoelectronic device of claim 1, wherein the at least one semiconducting layer extends into the second portion.

19. The optoelectronic device of claim 1, wherein the injection layer is deposited on a second layer interface, the second layer interface being a distal layer interface of the at least one semiconducting layer.

20. The optoelectronic device of claim 19, wherein the second layer interface is continuous with the first layer interface.

21. The optoelectronic device of claim 19, wherein the first layer interface and the second layer interface are both distal layer interfaces of a common layer.

22. The optoelectronic device of claim 1, wherein in at least the first portion, the at least one semiconducting layer comprises at least one emitting layer, and the injection layer is disposed between the at least one emitting layer and the second electrode.

23. The optoelectronic device of claim 22, wherein in at least the first portion, the at least one semiconducting layer comprises at least one transport layer disposed between the at least one emitting layer and the injection layer.

24. The optoelectronic device according to claim 23, wherein in at least the first portion, the distal layer interface of the at least one semiconducting layer is a distal layer interface of the transmission layer thereof.

25. The optoelectronic device of claim 23, wherein the first layer interface is a distal layer interface of the at least one semiconducting layer between a substrate and the transmission layer of the at least one semiconducting layer.

26. The optoelectronic device of claim 1, wherein a lateral extent of the at least one emitting region in the first portion comprises a geometric intersection of: the first electrode, the second electrode, and the at least one semiconducting layer therebetween.

27. The optoelectronic device of claim 1, wherein the first electrode is an anode.

28. The optoelectronic device of claim 13, further comprising at least one particulate structure disposed on a surface of the first layer in the second portion.

29. The optoelectronic device of claim 28, wherein the at least one particulate structure comprises at least one of: the electrode material; and the implant material.

30. The optoelectronic device of claim 28, wherein the at least one grain structure comprises a metal fluoride of the at least one grain structure.

31. The optoelectronic device of claim 30, wherein the metal fluoride of the at least one particle structure is substantially the same as the metal fluoride of the implant material.

32. The optoelectronic device of claim 28, wherein the at least one grain structure comprises at least one seed.

33. The optoelectronic device of claim 32, wherein the at least one seed comprises the implant material.

34. The optoelectronic device of claim 32, wherein the at least one seed is coated with at least one electrode material.

35. The optoelectronic device of claim 13, further comprising an upper cladding layer extending across the first portion and the second portion and comprising an overlying material.

36. The optoelectronic device of claim 35, wherein the overlying material comprises a metal fluoride.

37. The optoelectronic device of claim 36, wherein the metal fluoride of the overlying material is substantially the same as the metal fluoride of the implanted material.

38. The optoelectronic device according to claim 1, wherein the patterned coating has an average layer thickness that exceeds one of: an average layer thickness of the injection layer and an average layer thickness of the second electrode.

39. The optoelectronic device of claim 1, wherein the patterned coating has an average layer thickness that exceeds the combined average layer thickness of the injection layer and the second electrode.

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