DBD plasma reactor

Abstract

The invention provides a DBD plasma reactor which comprises a reaction tube, an inner electrode connected with a high-voltage electrode is arranged in the reaction tube, an outer electrode connected with a grounding electrode is arranged outside the reaction tube, and a discharge area located between the inner electrode and the outer electrode is formed in the reaction tube. The discharge area is used for generating plasma; moreover, a reaction tank located below the inner electrode is further arranged in the reaction tube, a solid or liquid substrate is contained in the reaction tank, and the plasma generated in the discharge area reacts with the substrate in the reaction tank. The DBD plasma reactor provided by the invention can solve the problems that an existing dielectric barrier discharge plasma reactor cannot control the temperature of a reaction area, and preparation-level plasma cannot participate in a multi-phase reaction.

Description

Technical Field

[0001] The present invention relates to the field of plasma reaction technology, and more specifically, to a DBD plasma reactor. Background Art

[0002] A plasma reactor is an instrument that generates plasma and interacts with other substances to achieve chemical reactions. Plasma reactors have the characteristics of good fluidity, strong diffusivity, fast reaction speed, and low energy consumption. They can be used to produce high-purity products or synthesize special functional materials.

[0003] Dielectric barrier discharge (DBD) plasma is a gas discharge phenomenon in which an insulating medium is placed in the discharge space. The DBD plasma is characterized by uniform, diffuse and stable discharge. Under atmospheric pressure, this gas discharge presents a microchannel discharge structure, and micro-discharges are carried out through discharge filaments in the discharge space and time. Each micro-discharge time is very short, and it has the characteristics of large-space uniform discharge of glow discharge and high-pressure operation of corona discharge.

[0004] At present, the structures adopted by dielectric barrier discharge plasma reactors usually include planar structure electrodes and coaxial structure electrodes. Related studies have shown that increasing the discharge zone volume of the reactor can improve the discharge effect. Planar structure electrodes mainly refer to parallel plate-plate reactors, which have the characteristics of uniform and stable discharge. However, due to the limitations of production processes and insulation processes, it is difficult to increase the discharge zone volume of plate-plate reactors. The sleeve reactor in the coaxial structure reactor can obtain a larger discharge zone volume by increasing the axial and radial dimensions of the dielectric tube. The use of an inner electrode with a small curvature radius can obtain a larger electric field strength, which is conducive to gas discharge. At the same time, the plate-plate reactor cannot meet the requirements of large-capacity processing due to its small discharge zone volume, while the coaxial reactor can meet the requirements of large-capacity processing due to its large discharge zone volume.

[0005] However, the existing dielectric barrier discharge plasma reactor still has the following technical problems:

[0006] 1. Most of the existing dielectric barrier discharge plasma reactors are unable to carry out plasma-liquid and solid reactions; 2. The existing dielectric barrier discharge plasma reactors are unable to control the temperature of the reaction zone, which results in many organic reactions being unable to be precisely regulated; 3. Most of the existing dielectric barrier discharge plasma reactors use relatively thin pipes for reactions and are unable to carry a large amount of substrates. In addition, the existing dielectric barrier discharge plasma reactors do not achieve temperature control in the reaction zone, and the substrates are prone to side reactions, resulting in most existing technologies being able to only carry out analytical-level experiments and being unable to achieve large-scale synthesis of target products at the preparation level.

[0007] Based on this, there is an urgent need for a preparative-grade plasma-liquid and solid reactor that can accurately control the temperature of the reaction area. Summary of the invention

[0008] In view of the above problems, an object of the present invention is to provide a DBD plasma reactor to solve the problem that the existing dielectric barrier discharge plasma reactor cannot control the temperature of the reaction area and cannot achieve the preparation-level plasma and substrate reaction.

[0009] The DBD plasma reactor provided by the present invention comprises a reaction tube, wherein an inner electrode connected to a high voltage electrode is arranged inside the reaction tube, an outer electrode connected to a ground electrode is arranged outside the reaction tube, a discharge zone is formed between the inner electrode and the outer electrode in the reaction tube, and the discharge zone is used to generate plasma; and

[0010] A reaction tank is also provided in the reaction tube and is located below the inner electrode. A substrate is contained in the reaction tank, and the plasma generated in the discharge region reacts with the substrate.

[0011] In addition, a preferred solution is that an annular temperature control jacket surrounding the discharge zone and the reaction tank is provided outside the reaction tube, and a conductive liquid is loaded in the annular temperature control jacket.

[0012] In addition, a preferred solution is that the conductive liquid is connected to the ground electrode, and the annular temperature control sleeve and the conductive liquid inside it together constitute the outer electrode.

[0013] In addition, a preferred solution is that a circulating temperature control pipe is connected to the annular temperature control sleeve, a circulating temperature control pump is provided on the circulating temperature control pipe, and the conductive liquid is circulated and temperature-controlled through the circulating temperature control pipe in cooperation with the circulating temperature control pump.

[0014] In addition, a preferred solution is that an air inlet pipe and an air outlet pipe are connected to the reaction tube, and the gas medium flows into the reaction tube through the air inlet pipe and flows out from the air outlet pipe; and,

[0015] The gas medium flowing through the discharge region generates the plasma under the action of the outer electrode and the inner electrode.

[0016] In addition, a preferred solution is that the inner electrode includes a first conductor rod and a conductor column connected to the lower end of the first conductor rod, wherein the upper end of the first conductor rod extends to the outside of the upper end of the reaction tube and is connected to the high-voltage electrode, the annular temperature control sleeve surrounds the conductor column, and the area in the reaction tube between the conductor column and the annular temperature control sleeve forms the discharge zone.

[0017] In addition, a preferred solution is that the reaction tube and the conductor column are both cylindrical structures, and the annular temperature control sleeve is a circular ring structure; and,

[0018] The reaction tube, the conductor column and the annular temperature control sleeve are coaxially arranged.

[0019] In addition, a preferred solution is that a second conductor rod is provided on the annular temperature control sleeve, the lower portion of the second conductor rod is in contact with the circulating temperature control liquid, and the upper end of the second conductor rod is connected to an external grounding electrode.

[0020] In addition, a preferred solution is that both the first conductor rod and the second conductor rod are copper rods, the conductor column is a copper column; and the reaction tube is a quartz tube.

[0021] In addition, a preferred solution is that a boss corresponding to the upper and lower parts of the conductor column is provided in the middle of the reaction tank, and the substrate is accommodated in the gap between the reaction tank and the boss.

[0022] Compared with the prior art, the DBD plasma reactor according to the present invention has the following beneficial effects:

[0023] The DBD plasma reactor provided by the present invention, by arranging a reaction groove below the inner electrode in a reaction tube and arranging a substrate in the reaction groove, can make the plasma generated in the discharge zone flow into the reaction groove with the gas to realize the reaction between the plasma and the substrate; because the reaction groove can carry a large amount of substrate, and by arranging an annular temperature control jacket outside the reaction zone, the reaction can be controlled by temperature, thereby realizing the synthesis of the target product at the preparation level.

[0024] In order to achieve the above and related purposes, one or more aspects of the present invention include features that will be described in detail later and are particularly pointed out in the claims. The following description and the accompanying drawings describe some exemplary aspects of the present invention in detail. However, these aspects indicate only some of the various ways in which the principles of the present invention can be used. In addition, the present invention is intended to include all of these aspects and their equivalents. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] By referring to the following description in conjunction with the accompanying drawings, and with a more comprehensive understanding of the present invention, other objects and results of the present invention will become more apparent and easy to understand. In the accompanying drawings:

[0026] Figure 1 The structural principle diagram of the DBD plasma reactor provided by the embodiment of the present invention is shown;

[0027] Figure 2 An enlarged structural view showing the position of a reaction slot in a DBD plasma reactor provided by a preferred embodiment of the present invention is shown;

[0028] Figure 3 A structural enlarged view showing the position of a boss in a DBD plasma reactor provided by another preferred embodiment of the present invention is shown;

[0029] Reference numerals: reaction tube 1 , first conductor rod 2 , air outlet pipe 3 , air inlet pipe 4 , circulating temperature control tube 5 , conductor column 6 , annular temperature control sleeve 7 , reaction tank 8 , circulating temperature control pump 9 , boss 10 , positioning hole 11 .

[0030] The same reference numerals throughout the drawings indicate similar or corresponding features or functions. DETAILED DESCRIPTION

[0031] In the following description, for the purpose of illustration, in order to provide a comprehensive understanding of one or more embodiments, many specific details are set forth. However, it is apparent that these embodiments may also be implemented without these specific details. In other examples, for ease of describing one or more embodiments, known structures and devices are shown in the form of block diagrams.

[0032] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific position, be constructed and operated in a specific position, and therefore cannot be understood as limiting the present invention; the terms "first", "second", and "third" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance; in addition, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be an indirect connection through an intermediate medium, or it can be a connection between the two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0033] Figure 1 The structure of the DBD plasma reactor provided by the embodiment of the present invention is shown. Figure 1It can be seen that the DBD plasma reactor provided by the present invention includes a reaction tube 1 as a reaction container, and the generation of plasma and the reaction of plasma with a substrate are both carried out in the reaction tube 1; specifically, in order to realize the generation of plasma inside the reaction tube 1, an inner electrode connected to an external high-voltage electrode is arranged inside the reaction tube 1, and an outer electrode connected to an external grounding electrode is arranged outside the reaction tube 1. The inner electrode is connected to the high-voltage electrode, and has a large potential difference with the outer electrode connected to the grounding electrode, so that a strong electric field can be formed between the two, thereby forming a potential difference between the inner electrode and the outer electrode in the reaction tube 1. In the discharge area, the strong electric field will promote the directional high-speed movement of electrons in the discharge area. Such electrons with large kinetic energy are called high-energy electrons. When high-energy electrons collide with gas molecules of the gas medium in the discharge area, energy transfer will occur, which will activate a part of the gas to generate charged active intermediate species. The high-energy electrons and the generated charged active intermediate species together constitute plasma; in order to achieve a controllable reaction between plasma and substrate, a reaction tank 8 located below the inner electrode is also provided in the reaction tube 1. The reaction tank 8 contains a substrate (liquid or solid reaction substrate), and the reaction tank 8 is not in the plasma generation area. The plasma generated in the discharge area contacts the substrate in the reaction tank under the action of the airflow and undergoes a corresponding chemical reaction (here, the essence is that the active intermediate species in the plasma react with the substrate in the reaction tank), thereby completing the two reactions inside the entire reaction tube 1.

[0034] The DBD plasma reactor provided by the present invention can effectively increase the contact area between the reaction groove 8 and the plasma and improve the preparation efficiency by designing the reaction groove 8 below the inner electrode in the reactor.

[0035] Further, Figure 2 FIG. 1 shows an enlarged structure of the position of the reaction slot 8 in a DBD plasma reactor provided by a preferred embodiment of the present invention, Figure 2It can be seen that the DBD plasma reactor provided in this embodiment is also provided with a boss 10 corresponding to the upper and lower conductor column 6 in the middle of the reaction tank 8, and the liquid substrate is contained in the gap between the reaction tank 8 and the boss 10. Through this arrangement, the substrate can be distributed around the boss 10 and aligned with the plasma generated around the conductor column 6 (i.e., the discharge zone), so that the substrate and the active intermediate species in the plasma generated in the upper part are better contacted, so that the reaction area between the plasma and the substrate is more concentrated, the energy utilization rate and the unit time output are increased, and the reaction can be carried out on a preparation-level scale. In addition, for the discharge zone, an uneven electric field will be generated at the edge of the conductor column 6. Such an electric field will produce a Befeld-Brown effect, generate a certain thrust, so that the substrate in the reaction tank 8 is disturbed, and the mixing effect can be achieved without the need for magnetic particles, which is conducive to the uniform occurrence of the reaction. Of course, whether to set the boss 10 in the middle of the reaction tank 8 can be selected according to actual needs. The boss 10 can be set or not.

[0036] It should be noted that, since the plasma in the discharge zone will generate a lot of heat during the generation process, in order to prevent the organic matter (i.e., the substrate in the reaction tank 8) from undergoing side reactions at high temperatures, in a preferred embodiment of the present invention, an annular temperature control sleeve 7 surrounding the discharge zone and the reaction tank 8 can be provided outside the reaction tube 1, and a conductive liquid is loaded in the annular temperature control sleeve 7. The annular temperature control sleeve 7 cooperates with the conductive liquid to timely control the temperature of the discharge zone and the reaction tank 8, so that the temperature of the reaction area (discharge zone and reaction tank 8) in the reaction tube 1 can be accurately and effectively controlled, which is conducive to the selective reaction and avoids the occurrence of side reactions at high temperatures.

[0037] also, Figure 3 FIG. 1 shows an enlarged structural view of the boss position in a DBD plasma reactor provided by another preferred embodiment of the present invention, wherein Figure 3 As shown, in order to ensure that the conductor column 6 and the reaction tank are in a coaxial state, the boss 10 can be set at the center position of the reaction tank 8, and then a positioning hole 11 is opened at the center position of the upper surface of the boss 10, and a positioning part is set at the center position of the lower surface of the conductor column 6, and the positioning part is fixed in the positioning hole 11 to achieve the required coaxial setting.

[0038] Furthermore, in order to achieve temperature control circulation of the conductive liquid in the annular temperature control sleeve 7, a circulating temperature control pipe 5 can be connected to the annular temperature control sleeve 7, and a circulating temperature control pump 9 can be set on the circulating temperature control pipe 5. The circulating temperature control pipe 5 and the conductive liquid in the annular temperature control sleeve 7 can circulate through the circulating temperature control pump 9, thereby achieving circulation temperature control of the conductive liquid; in addition, controlling the temperature of the conductive liquid through the circulating temperature control pump 9 can further accurately control the temperature of the reaction area in the reaction tube 1, thereby completing the required reaction at any specified temperature.

[0039] It should be noted that in order to improve the integration of the DBD plasma reactor provided by the present invention, the conductive liquid can be directly connected to the external grounding electrode, so that the annular temperature control sleeve 7 (which can be set as a metal product) and the conductive liquid inside it can be used together as the external electrode in the DBD plasma reactor provided by the present invention, which can save the operation of separately making the external electrode and cleverly reduce redundant components.

[0040] In addition, in order to realize the gas flow in the reaction tube 1, the reaction tube 1 is also connected with an inlet pipe 4 and an outlet pipe 3. The gas medium flows into the reaction tube 1 through the inlet pipe 4 and flows out through the outlet pipe 3. By adjusting the flow rate of the gas medium, a slight positive pressure is maintained inside the entire reaction tube 1. This facilitates the gas flow in the reaction tube 1; and the gas medium flowing through the discharge zone, under the action of high-energy electrons, activates a part of the gas molecules to generate charged active intermediate species, and the high-energy electrons and the charged active intermediate species together constitute plasma.

[0041] It should be noted that the gas medium not only acts as a flow carrier of the plasma, driving the plasma to flow from the discharge zone to the reaction tank 8 for reaction, but also acts as a reactant to collide with high-energy electrons in the discharge zone to generate charged active intermediate species, and the generated charged active intermediate species eventually react with the liquid substrate in the reaction tank 8. The gas medium introduced into the DBD plasma reactor provided by the present invention can be selected according to the reaction to be performed, including but not limited to nitrogen, oxygen, helium, methane, acetylene and a mixture thereof.

[0042] In a specific embodiment of the present invention, in order to realize the production of the inner electrode, the inner electrode may include a slender first conductor rod 2 and a short and fat conductor column 6 connected to the lower end of the first conductor rod 2, wherein the upper end of the first conductor rod 2 extends to the outside of the upper end of the reaction tube 1 (that is, extends to the outside of the reaction tube 1) and is connected to the high-voltage electrode, the annular temperature control sleeve 7 surrounds the conductor column 6, and the conductor column 6 serves as the main body of the inner electrode (that is, the part corresponding to the outer electrode), and the area in the reaction tube 1 between the conductor column 6 and the annular temperature control sleeve 7 (representing the outer electrode) forms the discharge zone.

[0043] It should be noted that since the area between the conductor post 6 and the annular temperature control sleeve 7 forms the discharge zone, in the actual manufacturing process, the size of the discharge zone can be adjusted by controlling the size and position of the conductor post 6. For example, by increasing the length of the conductor post 6, the area facing the conductor post 6 and the annular temperature control sleeve 7 can be increased, thereby increasing the size of the discharge zone, which can increase the amount of substances participating in the reaction in the discharge zone per unit time.

[0044] It should be further explained that, for the conductor column 6, the size of the discharge area can be adjusted by changing the geometric shape (such as cylindrical, prismatic, etc.), surface texture (smooth, threaded, thorny, toothed, etc.), roughness and other parameters of the conductor column 6 to control the amount of substances participating in the reaction in the discharge area per unit time.

[0045] In addition, in order to realize the connection between the annular temperature control sleeve 7 and the circulating temperature control liquid inside it and the external grounding electrode, a second conductor rod can be arranged on the annular temperature control sleeve 7, the lower part of the second conductor rod is directly in contact with the circulating temperature control liquid, and the upper end of the second conductor rod is connected to the external grounding electrode. In this way, the connection between the external electrode and the grounding electrode is realized.

[0046] It should be noted that, regarding the high-voltage electrode and the inner electrode, they are essentially the same component integrated into one. In order to facilitate readers to understand the structure of the entire DBD plasma reactor, the present invention records the part outside the reaction tube 1 as the high-voltage electrode, and the part inside the reaction tube 1 as the inner electrode, but this does not affect the essence that the high-voltage electrode and the inner electrode are the same component integrated into one. Similarly, regarding the grounding electrode and the outer electrode, they are essentially the same component integrated into one. In order to facilitate readers to understand the structure of the entire DBD plasma reactor, the present invention records the part outside the annular temperature control sleeve 7 as the grounding electrode, and the part inside the annular temperature control sleeve 7 as the outer electrode, but this does not affect the essence that the grounding electrode and the outer electrode are the same component integrated into one.

[0047] It should be noted that the DBD plasma reactor provided by the present invention can be manufactured based on the structure of an existing coaxial structure electrode type plasma reactor. For example, the reaction tube 1, the conductor column 6, the first conductor rod 2 and the reaction tank 8 can all be set as cylindrical structures, and the annular temperature control sleeve 7 can be set as a circular ring structure; and the reaction tube 1, the conductor column 6, the first conductor rod 2, the reaction tank 8 and the annular temperature control sleeve 7 are coaxially arranged, thereby realizing the manufacture of the coaxial electrode structure of the DBD plasma reactor provided by the present invention.

[0048] In addition, in order to improve the conductive effect inside the entire DBD plasma reactor, the first conductor rod 2 and the second conductor rod are preferably made of copper rods, and the conductor column 6 is preferably made of copper columns; however, in the actual manufacturing process, the first conductor rod 2, the second conductor rod and the conductor column 6 can be made of any other conductive material; in addition, in order to make the plasma discharge in the reaction tube 1 more uniform, the reaction tube 1 is made by selecting a material with a uniform dielectric constant, for example, the reaction tube 1 can preferably be a quartz tube with a certain dielectric constant.

[0049] To further illustrate the structure of the DBD plasma reactor provided by the present invention, Figure 1 For further explanation of its structure, refer to Figure 1 The entire reaction tube 1 is vertically divided into three different parts, namely the "non-reactive" gas phase shell (gray), the discharge area (purple) and the reaction tank 8 (yellow). The gray area includes the non-reactive area of ​​the reaction tube 1 as well as the inlet pipe 4 and the outlet pipe 3, and the gas flow rate is adjusted by external equipment to maintain a slight positive pressure in the system (inside the reaction tube 1).

[0050] In addition, there needs to be a certain gap between the discharge zone and the reaction tank 8, so as to effectively prevent the inner electrode from directly discharging the liquid substrate. In addition, there needs to be a discharge gap of several millimeters between the conductor column 6 in the inner electrode and the tube wall of the reaction tube 1 to form a discharge zone. There is a circulating condensation interlayer (i.e., an annular temperature control sleeve 7) outside the discharge zone and the reaction tank 8. The conductive liquid in the circulating condensation interlayer is driven and temperature-controlled by a circulating condensation pump, and circulates in the circulating condensation interlayer and the circulating temperature control tube 5, which can effectively control the temperature of the specified area and maintain a constant temperature of the reaction system.

[0051] Functionally, a second conductor rod is provided on the upper part of the circulating condensation interlayer in direct contact with the conductive liquid. The second conductor rod and the conductive liquid form an approximately equipotential body and are connected to the external grounding electrode to serve as an external electrode. The use of the conductive liquid enables the inner electrode to discharge the circulating condensation interlayer and reduce the resistance of the conductive liquid, thereby avoiding the potential drop generated when the current passes through the circulating condensation interlayer, thereby reducing energy dissipation in the form of heat. Finally, it should be noted that in order to ensure the normal progress of the reaction in the DBD plasma reactor provided by the present invention, an insulating medium needs to be provided on the inner wall of the reaction tube 1 (for example, the wall of a quartz tube can provide the properties of an insulating medium). If there is no insulating medium (such as a quartz plate), once a discharge occurs in the reaction tube 1, the discharge current jet will rapidly expand into an arc, resulting in uneven discharge, and the air gap voltage will drop sharply, resulting in the inability to maintain the discharge; after the insulating medium is placed, if the streamer expands, the voltage across the insulating medium will also increase, because the total voltage remains unchanged, so the air gap voltage becomes smaller, then the current will also become smaller, and the streamer will be reduced and extinguished; the provision of an insulating medium can avoid the occurrence of excessive streamers or arcs and maintain discharge stability.

[0052] It can be seen from the above specific embodiments that the DBD plasma reactor provided by the present invention has at least the following advantages:

[0053] 1. Design a reaction tank under the inner electrode and design a gas flow method so that the gas activated by the plasma can react with the liquid.

[0054] Second, an annular condensation jacket is designed on the periphery of the reaction tube, so that the temperature of the reaction area can be effectively controlled, thereby completing the reaction at any specified temperature.

[0055] 3. Use conductive liquid, and use the annular temperature control sleeve and conductive liquid as the outer electrode to cleverly reduce redundant components;

[0056] 4. By changing the size, shape and position of the conductor column, the size of the discharge area in the reaction tube is controlled, and the amount of substance that can participate in the reaction per unit time is changed.

[0057] 5. The reaction tank in the reaction tube is designed to be able to carry out reactions on a preparation-grade scale.

[0058] As above Figures 1 to 3 The DBD plasma reactor according to the present invention is described by way of example. However, those skilled in the art should understand that various improvements can be made to the DBD plasma reactor proposed by the present invention without departing from the content of the present invention. Therefore, the protection scope of the present invention should be determined by the content of the attached claims.

Claims

1. A DBD plasma reactor, characterized in that: A reaction tube is included, wherein an inner electrode connected to a high voltage electrode is arranged inside the reaction tube, an outer electrode connected to a ground electrode is arranged outside the reaction tube, a discharge region is formed between the inner electrode and the outer electrode in the reaction tube, and the discharge region is used to generate plasma; and A reaction tank is also provided in the reaction tube and is located below the inner electrode. A substrate is contained in the reaction tank. The plasma generated in the discharge region reacts with the substrate in the reaction tank.

2. The DBD plasma reactor according to claim 1, characterized in that: An annular temperature control jacket surrounding the discharge zone and the reaction tank is arranged outside the reaction tube, and a conductive liquid is loaded in the annular temperature control jacket.

3. The DBD plasma reactor according to claim 2, characterized in that: The conductive liquid is connected to the ground electrode, and the annular temperature control sleeve and the conductive liquid inside it together constitute the outer electrode.

4. The DBD plasma reactor according to claim 3, characterized in that: The annular temperature control sleeve is connected with a circulating temperature control pipe, and a circulating temperature control pump is arranged on the circulating temperature control pipe. The conductive liquid is circulated and temperature-controlled through the circulating temperature control pipe in cooperation with the circulating temperature control pump.

5. The DBD plasma reactor according to claim 4, characterized in that: The reaction tube is also connected with an air inlet pipe and an air outlet pipe, and the gas medium flows into the reaction tube through the air inlet pipe and flows out from the air outlet pipe; and, The gas medium flowing through the discharge region generates the plasma under the action of the outer electrode and the inner electrode.

6. The DBD plasma reactor according to claim 5, characterized in that: The inner electrode includes a first conductor rod and a conductor column connected to the lower end of the first conductor rod, wherein the upper end of the first conductor rod extends to the outside of the upper end of the reaction tube and is connected to the high-voltage electrode, the annular temperature control sleeve surrounds the conductor column, and the area in the reaction tube between the conductor column and the annular temperature control sleeve forms the discharge zone.

7. The DBD plasma reactor according to claim 6, characterized in that: The reaction tube and the conductor column are both cylindrical structures, and the annular temperature control sleeve is a circular ring structure; and The reaction tube, the conductor column and the annular temperature control sleeve are coaxially arranged.

8. The DBD plasma reactor according to claim 7, characterized in that: A second conductor rod is arranged on the annular temperature control sleeve, the lower part of the second conductor rod is in contact with the circulating temperature control liquid, and the upper end of the second conductor rod is connected to an external grounding electrode.

9. The DBD plasma reactor according to claim 8, characterized in that: The first conductor bar and the second conductor bar are both copper bars, and the conductor column is a copper column; and The reaction tube is a quartz tube.

10. The DBD plasma reactor according to any one of claims 1 to 9, characterized in that: A boss corresponding to the upper and lower parts of the conductor column is arranged in the middle of the reaction tank, and the substrate is accommodated in the gap between the reaction tank and the boss.

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