Epitaxial growth method, epitaxial growth device and epitaxial equipment
By obtaining and calculating the offset angle and distance of the silicon wafer on the base and calibrating it, the resistivity and thickness inhomogeneity caused by the position shift of the silicon wafer during epitaxial growth is solved, and the yield and production continuity of the epitaxial products are improved.
Patent Information
- Application Number
- CN202411789128.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-06
- Publication Date
- 2025-03-25
AI Technical Summary
During epitaxial growth, the position deviation of the silicon wafer on the base will affect the resistivity and thickness uniformity of the epitaxial silicon wafer, and thus affect the yield of the epitaxial product.
By obtaining coordinate data of the target area on the silicon wafer, calculate the angle and distance of the silicon wafer from the standard position, and calibrate the position of the silicon wafer on the base based on this data to ensure its correct position on the base.
This method can adjust the position of the silicon wafer on the base in time to ensure the uniformity of the resistivity and thickness of the epitaxial silicon wafer, thereby improving the yield of the epitaxial product, and improving the continuity and capacity stability of the epitaxial growth process.
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Figure CN119685923A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of semiconductor manufacturing technology, and in particular to an epitaxial growth method, an epitaxial growth device and an epitaxial equipment. Background Art
[0002] Epitaxial growth refers to the process of growing a single crystal thin film (the crystal direction is consistent with the substrate crystal direction) on a single crystal silicon substrate through epitaxy technology. The entire production process of epitaxial wafers includes five major processes: crystal growth (pulling silicon crystal rods from polysilicon materials) → molding (slicing and grinding) → polishing (double-sided polishing) → cleaning (removing surface particles, metal ions and organic matter) → epitaxy (vapor deposition). Epitaxy is the last important process, which can improve the crystal properties, native defects, resistivity and flatness of the polished wafer.
[0003] like Figure 1 As shown, the epitaxial growth equipment generally includes: an upper quartz bell jar 1, a lower quartz bell jar 2, an air inlet, an exhaust port, a halogen lamp 3, and a mounting component 4. In the reaction chamber enclosed by the upper quartz bell jar 1 and the lower quartz bell jar 2, a base 6 for placing a silicon wafer, a base support rod 7, and a silicon wafer support rod are provided. After the silicon wafer 8 is input into the reaction chamber and placed on the base 6 in the reaction chamber, the upper heating module arranged on the upper side of the base 6 and the lower heating module arranged on the lower side of the base 6 heat the silicon wafer 8, and the raw material gas 5 is supplied to the surface of the silicon wafer 8, thereby performing vapor phase epitaxial growth, and the epitaxial wafer obtained by the vapor phase epitaxial growth is output to the outside of the reaction chamber. During the growth process, the base support rod 7 plays the role of fixing the base 6 and driving the base 6 to rotate, so that the epitaxial growth can be carried out evenly on the substrate 6. Figure 2 The schematic diagram of the structure of the epitaxial growth equipment shows that during epitaxial growth, the transfer blade in the front-end module ② transfers the silicon wafer from the loading port ① to the load lock unit ③, and the load lock unit ③ is evacuated and backfilled with nitrogen. The transfer robot located in the transfer unit ④ transfers the silicon wafer in the load lock unit ③ through the transfer unit to the process reaction chamber ⑤ for epitaxial growth. After the growth is completed, the silicon wafer returns along the original route.
[0004] With the development of the integrated circuit industry, the requirements for substrates are becoming higher and higher, including the thickness, flatness, resistivity and surface granularity of the epitaxial layer. When the position of the silicon wafer transferred by the robot into the epitaxial reaction chamber is not correct, the silicon wafer will shift on the base, which will affect the resistivity and thickness uniformity of the epitaxial silicon wafer, and thus affect the yield of the epitaxial product. Summary of the invention
[0005] In order to solve the above technical problems, the present invention provides an epitaxial growth method, an epitaxial growth device, and an epitaxial equipment, which can improve the resistivity and thickness uniformity of epitaxial silicon wafers.
[0006] In order to achieve the above object, the technical solution adopted by the embodiment of the present invention is:
[0007] An epitaxial growth method comprising:
[0008] Sending a silicon wafer into an epitaxial reaction chamber and placing it on a susceptor in the epitaxial reaction chamber;
[0009] Acquiring coordinate data of a target area on the silicon wafer;
[0010] Calculating the angle and distance of the silicon wafer deviating from the standard position according to the coordinate data of the target area and the standard coordinate data, wherein the standard coordinate data is the coordinate data of the target area on the silicon wafer when the silicon wafer is at the standard position;
[0011] The position of the silicon wafer on the base is calibrated according to the angle and distance of the silicon wafer deviating from the standard position.
[0012] In some embodiments, the target area is a notch of the silicon wafer.
[0013] In some embodiments, the angle θ of the silicon wafer deviating from the standard position is calculated using the following formula:
[0014] tanθ=(y2-y1) / (x2-x1);
[0015] θ = arctanθ;
[0016] The coordinate data of the target area on the silicon wafer is (x2, y2), and the standard coordinate data is (x1, y1).
[0017] In some embodiments, the distance ρ of the silicon wafer deviating from the standard position is calculated using the following formula:
[0018]
[0019] The coordinate data of the target area on the silicon wafer is (x2, y2), and the standard coordinate data is (x1, y1).
[0020] The embodiment of the present invention further provides an epitaxial growth device, comprising:
[0021] A conveying mechanism, used for conveying the silicon wafer into the epitaxial reaction chamber and placing it on a susceptor in the epitaxial reaction chamber;
[0022] An acquisition module, used for acquiring coordinate data of a target area on the silicon wafer;
[0023] a calculation module, configured to calculate the angle and distance of the silicon wafer deviating from the standard position according to the coordinate data of the target area and the standard coordinate data, wherein the standard coordinate data is the coordinate data of the target area on the silicon wafer when the silicon wafer is at the standard position;
[0024] The calibration module is used to calibrate the position of the silicon wafer on the base according to the angle and distance of the silicon wafer deviating from the standard position.
[0025] In some embodiments, the calculation module is specifically used to calculate the angle θ of the silicon wafer deviating from the standard position using the following formula:
[0026] tanθ=(y2-y1) / (x2-x1);
[0027] θ = arctanθ;
[0028] The coordinate data of the target area on the silicon wafer is (x2, y2), and the standard coordinate data is (x1, y1).
[0029] In some embodiments, the calculation module is specifically used to calculate the distance ρ of the silicon wafer deviating from the standard position using the following formula:
[0030]
[0031] The coordinate data of the target area on the silicon wafer is (x2, y2), and the standard coordinate data is (x1, y1).
[0032] An embodiment of the present invention further provides an epitaxial growth device, which includes: a processor and a memory; the processor is used to execute instructions stored in the memory to implement the above-mentioned epitaxial growth method.
[0033] An embodiment of the present invention further provides a computer-readable storage medium, wherein the computer-readable storage medium stores at least one instruction, and the at least one instruction is used to be executed by a processor to implement the above-mentioned epitaxial growth method.
[0034] An embodiment of the present invention further provides an epitaxial device, which includes the above-mentioned epitaxial growth device.
[0035] The beneficial effects of the present invention are:
[0036] In this embodiment, after the silicon wafer is placed on the base, the coordinate data of the target area on the silicon wafer is obtained, the angle and distance of the silicon wafer deviating from the standard position are calculated according to the coordinate data of the target area and the standard coordinate data, and the position of the silicon wafer on the base is calibrated according to the angle and distance of the silicon wafer deviating from the standard position. This embodiment can timely adjust the position of the silicon wafer on the base when the position of the silicon wafer on the base is offset or when the position of the manipulator conveying the silicon wafer into the epitaxial reaction chamber is not correct, so as to ensure the uniformity of the resistivity and thickness of the epitaxial silicon wafer, and thus ensure the yield of the epitaxial product. In addition, this embodiment does not need to interrupt the production operation, improves the continuity of the epitaxial growth process, stabilizes the production capacity, and avoids the undesired contamination of the base and other components caused by the exposure of the reaction chamber, improves the cleanliness of the epitaxial growth environment, and is conducive to improving the quality of the epitaxial silicon wafer. BRIEF DESCRIPTION OF THE DRAWINGS
[0037] Figure 1 A schematic diagram showing the structure of an existing epitaxial growth device;
[0038] Figure 2 A schematic diagram showing the structure of an epitaxial growth device;
[0039] Figure 3 A schematic diagram showing a flow chart of an epitaxial growth method according to an embodiment of the present invention;
[0040] Figure 4 Schematic diagram showing that the silicon wafer has not shifted on the base;
[0041] Figure 5 Schematic diagram showing the displacement of the silicon wafer on the base;
[0042] Figure 6 A schematic diagram showing the structure of an epitaxial growth device according to an embodiment of the present invention.
[0043] Reference numerals
[0044] 1Upper quartz bell jar
[0045] 2 Lower quartz bell jar
[0046] 3 Halogen lamps
[0047] 4. Install the components
[0048] 5. Process Gas
[0049] 6 Base
[0050] 7 Base support rod
[0051] 8 Silicon wafer
[0052] 9 Pitch
[0053] 10 bevel
[0054] 01 Silicon Wafer
[0055] 02 Base DETAILED DESCRIPTION
[0056] In order to make the purpose, technical solution and advantages of the embodiment of the present invention clearer, the technical solution of the embodiment of the present invention will be clearly and completely described below in conjunction with the drawings of the embodiment of the present invention. Obviously, the described embodiment is a part of the embodiment of the present invention, not all of the embodiments. Based on the described embodiment of the present invention, all other embodiments obtained by ordinary technicians in this field belong to the scope of protection of the present invention.
[0057] Based on the influence of the temperature field distribution of the epitaxial reaction chamber, the temperature of the edge area of the base is usually higher than that of the center area of the base. Therefore, the closer to the edge area of the base, the higher the temperature. Under certain conditions, the higher the temperature of the epitaxial reaction, the faster the epitaxial layer on the surface of the silicon wafer grows. In the actual epitaxial growth process, when the position of the silicon wafer on the base is offset, it will affect the uniformity of the resistivity and thickness of the epitaxial silicon wafer, thereby affecting the yield of the epitaxial product. If the position of the silicon wafer on the base cannot be adjusted in time or when the position of the manipulator to transport the silicon wafer into the reaction chamber is not correct, the silicon wafer will affect the uniformity of the resistivity and thickness of the epitaxial silicon wafer after it is offset on the base, thereby affecting the yield of the epitaxial product. In this case, it is usually necessary to shut down the epitaxial growth equipment to cool down, and then open the epitaxial reaction chamber to check and calibrate the position of the silicon wafer, and it is necessary to recalibrate the transmission position of the silicon wafer on the base by the conveying mechanism so that the silicon wafer can be placed centrally on the base. However, this calibration method consumes a lot of time and manpower, is inefficient, has poor accuracy, and is time-consuming, seriously affecting the production capacity of epitaxial growth equipment.
[0058] The invention provides an epitaxial growth method, an epitaxial growth device and an epitaxial equipment, which can improve the resistivity and thickness uniformity of an epitaxial silicon wafer.
[0059] The embodiment of the present invention provides an epitaxial growth method, such as Figure 3 As shown, including:
[0060] Step 101: sending a silicon wafer into an epitaxial reaction chamber and placing it on a susceptor in the epitaxial reaction chamber;
[0061] Step 102: Acquire coordinate data of a target area on the silicon wafer;
[0062] Step 103: calculating the angle and distance of the silicon wafer deviating from the standard position according to the coordinate data of the target area and the standard coordinate data, wherein the standard coordinate data is the coordinate data of the target area on the silicon wafer when the silicon wafer is at the standard position;
[0063] Step 104: Calibrate the position of the silicon wafer on the base according to the angle and distance of the silicon wafer deviating from the standard position.
[0064] In this embodiment, after the silicon wafer is placed on the base, the coordinate data of the target area on the silicon wafer is obtained, the angle and distance of the silicon wafer deviating from the standard position are calculated according to the coordinate data of the target area and the standard coordinate data, and the position of the silicon wafer on the base is calibrated according to the angle and distance of the silicon wafer deviating from the standard position. This embodiment can timely adjust the position of the silicon wafer on the base when the position of the silicon wafer on the base is offset or when the position of the manipulator conveying the silicon wafer into the epitaxial reaction chamber is not correct, so as to ensure the uniformity of the resistivity and thickness of the epitaxial silicon wafer, and thus ensure the yield of the epitaxial product. In addition, this embodiment does not need to interrupt the production operation, improves the continuity of the epitaxial growth process, stabilizes the production capacity, and avoids the undesired contamination of the base and other components caused by the exposure of the reaction chamber, improves the cleanliness of the epitaxial growth environment, and is conducive to improving the quality of the epitaxial silicon wafer.
[0065] The target area may be any set area on the silicon wafer. In some embodiments, the target area may be a notch of the silicon wafer.
[0066] like Figure 4 As shown, the position of the notch when the silicon wafer 01 is in the standard position of the base 02 is set as the reference point O1, and the coordinates are (x1, y1); the silicon wafer is sent into the epitaxial reaction chamber by a robot for epitaxial growth; Figure 5 As shown, the position of silicon wafer 01 on base 02 of epitaxial reaction chamber deviates. The camera assembly can capture the position of notch when the silicon wafer deviates from base 02 and define it as point O2 with coordinates (x2, y2). According to the positional relationship between points O1 (x1, y1) and O2 (x2, y2), the angle and distance of silicon wafer 01 deviating from the standard position can be calculated.
[0067] In some embodiments, the angle θ of the silicon wafer deviating from the standard position is calculated using the following formula:
[0068] tanθ=(y2-y1) / (x2-x1);
[0069] θ = arctanθ;
[0070] The coordinate data of the target area on the silicon wafer is (x2, y2), and the standard coordinate data is (x1, y1).
[0071] In some embodiments, the distance ρ of the silicon wafer deviating from the standard position is calculated using the following formula:
[0072]
[0073] The coordinate data of the target area on the silicon wafer is (x2, y2), and the standard coordinate data is (x1, y1).
[0074] After obtaining the angle and distance of the silicon wafer deviating from the standard position, the position of the silicon wafer on the base can be calibrated according to the angle and distance of the silicon wafer deviating from the standard position, such as controlling the manipulator to move the silicon wafer by the distance in the direction corresponding to the angle, so that the silicon wafer is placed at the desired position on the base, such as the center position on the base, and the spacing between the silicon wafer and the base is evenly distributed. In this way, after epitaxial growth is performed on the silicon wafer, the uniformity of the resistivity and thickness of the obtained epitaxial layer is good, thereby improving the yield of epitaxial products.
[0075] The embodiment of the present invention also provides an epitaxial growth device, such as Figure 6 As shown, including:
[0076] The conveying mechanism 21 is used to convey the silicon wafer into the epitaxial reaction chamber and place it on a susceptor in the epitaxial reaction chamber;
[0077] An acquisition module 22, used to acquire coordinate data of a target area on the silicon wafer;
[0078] A calculation module 23, used for calculating the angle and distance of the silicon wafer deviating from the standard position according to the coordinate data of the target area and the standard coordinate data, wherein the standard coordinate data is the coordinate data of the target area on the silicon wafer when the silicon wafer is at the standard position;
[0079] The calibration module 24 is used to calibrate the position of the silicon wafer on the base according to the angle and distance of the silicon wafer deviating from the standard position.
[0080] In this embodiment, after the silicon wafer is placed on the base, the coordinate data of the target area on the silicon wafer is obtained, the angle and distance of the silicon wafer deviating from the standard position are calculated according to the coordinate data of the target area and the standard coordinate data, and the position of the silicon wafer on the base is calibrated according to the angle and distance of the silicon wafer deviating from the standard position. This embodiment can timely adjust the position of the silicon wafer on the base when the position of the silicon wafer on the base is offset or when the position of the manipulator conveying the silicon wafer into the epitaxial reaction chamber is not correct, so as to ensure the uniformity of the resistivity and thickness of the epitaxial silicon wafer, and thus ensure the yield of the epitaxial product. In addition, this embodiment does not need to interrupt the production operation, improves the continuity of the epitaxial growth process, stabilizes the production capacity, and avoids the undesired contamination of the base and other components caused by the exposure of the reaction chamber, improves the cleanliness of the epitaxial growth environment, and is conducive to improving the quality of the epitaxial silicon wafer.
[0081] like Figure 4As shown, the position of the notch when the silicon wafer 01 is in the standard position of the base 02 is set as the reference point O1, and the coordinates are (x1, y1); the silicon wafer is sent into the epitaxial reaction chamber by a robot for epitaxial growth; Figure 5 As shown, the position of silicon wafer 01 on base 02 of epitaxial reaction chamber deviates. The camera assembly can capture the position of notch when the silicon wafer deviates from base 02 and define it as point O2 with coordinates (x2, y2). According to the positional relationship between points O1 (x1, y1) and O2 (x2, y2), the angle and distance of silicon wafer 01 deviating from the standard position can be calculated.
[0082] In some embodiments, the calculation module 23 is specifically used to calculate the angle θ of the silicon wafer deviating from the standard position using the following formula:
[0083] tanθ=(y2-y1) / (x2-x1);
[0084] θ = arctanθ;
[0085] The coordinate data of the target area on the silicon wafer is (x2, y2), and the standard coordinate data is (x1, y1).
[0086] In some embodiments, the calculation module 23 is specifically used to calculate the distance ρ of the silicon wafer deviating from the standard position using the following formula:
[0087]
[0088] The coordinate data of the target area on the silicon wafer is (x2, y2), and the standard coordinate data is (x1, y1).
[0089] After obtaining the angle and distance of the silicon wafer deviating from the standard position, the calibration module 24 can calibrate the position of the silicon wafer on the base according to the angle and distance of the silicon wafer deviating from the standard position, so that the spacing between the silicon wafer and the base is evenly distributed. In this way, after epitaxial growth is performed on the silicon wafer, the uniformity of the resistivity and thickness of the obtained epitaxial layer is good, thereby improving the yield of epitaxial products.
[0090] An embodiment of the present invention further provides an epitaxial growth device, which includes: a processor and a memory; the processor is used to execute instructions stored in the memory to implement the above-mentioned epitaxial growth method.
[0091] An embodiment of the present invention further provides a computer-readable storage medium, wherein the computer-readable storage medium stores at least one instruction, and the at least one instruction is used to be executed by a processor to implement the above-mentioned epitaxial growth method.
[0092] Those skilled in the art should be aware that in one or more of the above examples, the functions described in the embodiments of the present application can be implemented with hardware, software, firmware, or any combination thereof. When implemented using software, these functions can be stored in a computer-readable medium or transmitted as one or more instructions or codes on a computer-readable medium. Computer-readable media include computer storage media and communication media, wherein the communication media include any media that facilitates the transmission of a computer program from one place to another. The storage medium can be any available medium that a general or special-purpose computer can access.
[0093] An embodiment of the present invention further provides an epitaxial device, which includes the above-mentioned epitaxial growth device.
[0094] It should be noted that each embodiment in this specification is described in a progressive manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the embodiments, since they are basically similar to the product embodiments, the description is relatively simple, and the relevant parts can be referred to the partial description of the product embodiments.
[0095] Unless otherwise defined, the technical terms or scientific terms used in the present disclosure should be understood by people with ordinary skills in the field to which the present disclosure belongs. The "first", "second" and similar words used in the present disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. "Include" or "comprise" and similar words mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects. "Connect" or "connected" and similar words are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.
[0096] It will be understood that when an element such as a layer, film, region, or substrate is referred to as being “on” or “under” another element, it can be “directly on” or “under” the other element or intervening elements may be present.
[0097] In the description of the above embodiments, specific features, structures, materials or characteristics may be combined in a suitable manner in any one or more embodiments or examples.
[0098] The above is only a specific embodiment of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any person skilled in the art who is familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present disclosure, which should be included in the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be based on the protection scope of the claims.
Claims
1. An epitaxial growth method, characterized in that: include: Sending a silicon wafer into an epitaxial reaction chamber and placing it on a susceptor in the epitaxial reaction chamber; Acquiring coordinate data of a target area on the silicon wafer; Calculating the angle and distance of the silicon wafer deviating from the standard position according to the coordinate data of the target area and the standard coordinate data, wherein the standard coordinate data is the coordinate data of the target area on the silicon wafer when the silicon wafer is at the standard position; The position of the silicon wafer on the base is calibrated according to the angle and distance of the silicon wafer deviating from the standard position.
2. The epitaxial growth method according to claim 1, characterized in that: The target area is a notch of the silicon wafer.
3. The epitaxial growth method according to claim 1, characterized in that: The angle θ of the silicon wafer deviating from the standard position is calculated using the following formula: tanθ=(y2-y1) / (x2-x1); θ = arctanθ; The coordinate data of the target area on the silicon wafer is (x2, y2), and the standard coordinate data is (x1, y1).
4. The epitaxial growth method according to claim 1, characterized in that: The distance ρ of the silicon wafer deviating from the standard position is calculated using the following formula: The coordinate data of the target area on the silicon wafer is (x2, y2), and the standard coordinate data is (x1, y1).
5. An epitaxial growth device, characterized in that: include: A conveying mechanism, used for conveying the silicon wafer into the epitaxial reaction chamber and placing it on a susceptor in the epitaxial reaction chamber; An acquisition module, used for acquiring coordinate data of a target area on the silicon wafer; a calculation module, configured to calculate the angle and distance of the silicon wafer deviating from the standard position according to the coordinate data of the target area and the standard coordinate data, wherein the standard coordinate data is the coordinate data of the target area on the silicon wafer when the silicon wafer is at the standard position; The calibration module is used to calibrate the position of the silicon wafer on the base according to the angle and distance of the silicon wafer deviating from the standard position.
6. The epitaxial growth device according to claim 5, characterized in that: The calculation module is specifically used to calculate the angle θ of the silicon wafer deviating from the standard position using the following formula: tanθ=(y2-y1) / (x2-x1); θ = arctanθ; The coordinate data of the target area on the silicon wafer is (x2, y2), and the standard coordinate data is (x1, y1).
7. The epitaxial growth device according to claim 5, characterized in that: The calculation module is specifically used to calculate the distance ρ of the silicon wafer deviating from the standard position by using the following formula: The coordinate data of the target area on the silicon wafer is (x2, y2), and the standard coordinate data is (x1, y1).
8. An epitaxial growth device, characterized in that: The device comprises: a processor and a memory; the processor is used to execute instructions stored in the memory to implement the epitaxial growth method according to any one of claims 1 to 4.
9. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores at least one instruction, and the at least one instruction is used to be executed by a processor to implement the epitaxial growth method according to any one of claims 1 to 4.
10. An epitaxial device, characterized in that: The epitaxial equipment comprises the epitaxial growth device according to any one of claims 5-7.