Method and apparatus for collecting metal from a silicon wafer surface

Abstract

The application provides a silicon wafer surface metal collection method and device, and belongs to the technical field of semiconductor manufacturing. The silicon wafer surface metal collection device comprises: a carrier for carrying a silicon wafer, which can carry the silicon wafer to rotate with the carrier; a scanning head arranged on one side of the carrier, which is used for sucking scanning liquid to scan the silicon wafer and emit a positioning signal; a detector fixed on one side of the carrier, which is used for receiving the positioning signal emitted by the scanning head, detecting the straight-line distance between the detector and the scanning head according to the positioning signal; and a controller used for controlling the motion state of the scanning head and the detector according to the straight-line distance between the detector and the scanning head. The application can realize the scanning of a fan-shaped metal collection area.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor manufacturing, and in particular to a method and device for collecting metal on the surface of a silicon wafer. BACKGROUND

[0002] At present, the collection of metal on the surface of a silicon wafer is performed by using a metal collection device as shown in FIG. 1, a nozzle in the metal collection device is used to suck a scanning liquid to collect metal on the surface of a silicon wafer, and the metal content in the scanning liquid is detected by inductively coupled plasma-mass spectrometry (ICP-MS). Figure 1

[0003] In the prior art, the metal collection on the surface of a silicon wafer is implemented by moving the nozzle from the center of the silicon wafer along the radial direction of the silicon wafer, while a silicon wafer supporting device in the metal collection device drives the silicon wafer to rotate, so that the scanning mode is spiral scanning, which results in that the metal collection area is mainly circular (as shown in FIG. 2) or annular (as shown in FIG. 3), but it is impossible to realize the scanning of a metal collection area in other shapes. Figure 2 Figure 3 SUMMARY

[0004] To solve the above technical problems, the present application provides a method and device for collecting metal on the surface of a silicon wafer, which can realize the scanning of a fan-shaped metal collection area.

[0005] To achieve the above purpose, the technical solution adopted by the embodiments of the present application is as follows:

[0006] A device for collecting metal on the surface of a silicon wafer, comprising:

[0007] a stage for supporting a silicon wafer, which can support the silicon wafer to rotate with the stage;

[0008] a scanning head arranged on one side of the stage, which is used to suck a scanning liquid to scan the silicon wafer and emit a positioning signal;

[0009] a detector fixed on one side of the stage, which is used to receive the positioning signal emitted by the scanning head and detect the straight-line distance between the detector and the scanning head according to the positioning signal;

[0010] a controller, which is used to control the motion state of the scanning head and the detector according to the straight-line distance between the detector and the scanning head.

[0011] In some embodiments, the device further comprises:

[0012] ​​​a rotating support fixed on the object table, a first end of the rotating support being capable of moving along a radial direction of the object table;

[0013] a scanning arm fixed on the first end of the rotating support, the scanning arm extending along a vertical direction, the scanning head being arranged on the scanning arm and being capable of moving up and down along the scanning arm.

[0014] In some embodiments, the controller is specifically configured to control the scanning head and the probe to move to a starting scanning position on the silicon wafer; and repeatedly perform the scanning step until the probe and the scanning head reach a target scanning position.

[0015] The scanning step comprises: controlling the probe to rotate around the center of the silicon wafer in a first direction from a current position, and stopping the rotation when the linear distance between the probe and the scanning head reaches a preset distance for the first time or the second time; controlling the scanning liquid sucked by the scanning head to contact the silicon wafer; controlling the probe and the object table to rotate around the center of the silicon wafer in a second direction opposite to the first direction at the same angular velocity, and stopping the rotation when the distance between the probe and the scanning head is 0.

[0016] controlling the probe and the scanning head to move simultaneously in a radial direction of the silicon wafer by a first distance towards the center of the silicon wafer, controlling the probe to rotate around the center of the silicon wafer in a second direction from a current position, and stopping the rotation when the linear distance between the probe and the scanning head reaches a preset distance for the first time or the second time; controlling the scanning liquid sucked by the scanning head to contact the silicon wafer; controlling the probe and the object table to rotate around the center of the silicon wafer in the first direction at the same angular velocity, and stopping the rotation when the distance between the probe and the scanning head is 0.

[0017] wherein the first direction and the second direction are selected from a clockwise direction and a counterclockwise direction.

[0018] In some embodiments, the target scanning position is the center of the silicon wafer or a point on the inner arc edge of any fan-shaped region on the silicon wafer.

[0019] In some embodiments, the preset distance d satisfies:

[0020]

[0021] wherein when the angle corresponding to the target fan-shaped region to be scanned is less than or equal to 180 degrees, a is the angle corresponding to the target fan-shaped region to be scanned; when the angle corresponding to the target fan-shaped region to be scanned is greater than 180 degrees, a is the supplementary angle of the angle corresponding to the target fan-shaped region to be scanned, and R is the distance between the probe and the center of the silicon wafer.

[0022] The application also provides a method for collecting metal on the surface of a silicon wafer, which is applied to the device for collecting metal on the surface of a silicon wafer as described above, and the method comprises the following steps:

[0023] controlling the object table to carry the silicon wafer to rotate with the object table;

[0024] controlling the scanning head to suck the scanning liquid to scan the silicon wafer and emit a positioning signal;

[0025] controlling the detector to receive the positioning signal emitted by the scanning head and detect the straight-line distance between the detector and the scanning head according to the positioning signal;

[0026] controlling the motion state of the scanning head and the detector according to the straight-line distance between the detector and the scanning head.

[0027] In some embodiments, the step of controlling the motion state of the scanning head and the detector according to the straight-line distance between the detector and the scanning head comprises:

[0028] controlling the scanning head and the detector to move to a starting scanning position on the silicon wafer; and repeating the scanning step until the detector and the scanning head reach a target scanning position;

[0029] the scanning step comprises: controlling the detector to rotate around the center of the silicon wafer in a first direction from a current position, stopping the rotation when the straight-line distance between the detector and the scanning head reaches a preset distance for the first time or the second time; controlling the scanning liquid sucked by the scanning head to contact the silicon wafer; controlling the detector and the object table to rotate around the center of the silicon wafer in a second direction opposite to the first direction at the same angular velocity, and stopping the rotation when the distance between the detector and the scanning head is 0;

[0030] controlling the detector and the scanning head to move simultaneously in a radial direction of the silicon wafer by a first distance towards the center of the silicon wafer, controlling the detector to rotate around the center of the silicon wafer in a second direction from a current position, stopping the rotation when the straight-line distance between the detector and the scanning head reaches a preset distance for the first time or the second time; controlling the scanning liquid sucked by the scanning head to contact the silicon wafer; controlling the detector and the object table to rotate around the center of the silicon wafer in the first direction at the same angular velocity, and stopping the rotation when the distance between the detector and the scanning head is 0;

[0031] wherein the first direction and the second direction are selected from a clockwise direction and a counterclockwise direction.

[0032] In some embodiments, the preset distance d satisfies:

[0033]

[0034] wherein, when the angle corresponding to the target fan-shaped region to be scanned is less than or equal to 180 degrees, the angle is the angle corresponding to the target fan-shaped region to be scanned; when the angle corresponding to the target fan-shaped region to be scanned is greater than 180 degrees, the angle is the supplementary angle of the angle corresponding to the target fan-shaped region to be scanned, and R is the distance between the detector and the center of the silicon wafer.

[0035] The embodiment of the present application also provides a computer readable storage medium, wherein the computer readable storage medium stores a computer program, and the computer program is executed by a processor to realize the steps of the silicon wafer surface metal collection method.

[0036] The embodiment of the present application also provides a computer program product, comprising computer instructions, and the computer instructions are executed by a processor to realize the steps of the silicon wafer surface metal collection method.

[0037] The embodiment of the present application also provides a computer program product, comprising computer instructions, and the computer instructions are executed by a processor to realize the steps of the silicon wafer surface metal collection method.

[0038] In the embodiment, the scanning head scans the silicon wafer by sucking the scanning liquid and emits a positioning signal; the detector receives the positioning signal emitted by the scanning head, detects the straight-line distance between the detector and the scanning head according to the positioning signal; and the controller controls the motion state of the scanning head and the detector according to the straight-line distance between the detector and the scanning head. Through the control of the motion state of the scanning head and the detector by the controller, the preset region for metal collection on the silicon wafer surface can be a scanning region of various shapes, including a fan-shaped region of a preset angle. Compared with the prior art which can only perform metal scanning through a spiral scanning mode, the embodiment enriches the scanning mode of the silicon wafer surface metal collection and also enriches the shape of the scanning region (i.e. the metal collection region), and can realize surface scanning of a fan-shaped region of an arbitrary angle, thereby effectively improving the operability and accuracy of the silicon wafer surface analysis. BRIEF DESCRIPTION OF DRAWINGS

[0039] Figure 1 FIG. 1 shows a structural schematic diagram of a prior art metal collection device;

[0040] Figure 2 FIG. 2 shows a schematic diagram of a metal collection region in a circular shape;

[0041] Figure 3 FIG. 3 shows a schematic diagram of a metal collection region in an annular shape;

[0042] Figure 4 and Figure 5 FIG. 4 shows a structural schematic diagram of a silicon wafer surface metal collection device according to the embodiment of the present application;

[0043] Figure 6 a schematic diagram showing a scanning track of an embodiment of the present application;

[0044] Figure 7 a schematic diagram showing the relationship between the linear distance d between a detector and a scanning head and the angle a of a sector.

[0045] Reference signs

[0046] 1 carrier table

[0047] 2 rotating support

[0048] 3 scanning head

[0049] 4 detector

[0050] 5 scanning arm DETAILED DESCRIPTION

[0051] To make the objectives, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions of the embodiments of the present application will be described clearly and completely below with reference to the drawings of the embodiments of the present application. Obviously, the described embodiments are some but not all of the embodiments of the present application. Based on the described embodiments of the present application, all other embodiments obtained by those of ordinary skill in the art belong to the scope of protection of the present application.

[0052] In the production and processing of semiconductor silicon wafers, for example, in the cutting or polishing process, some sector or semi-sector processing defects or damages often occur, at which time specific analysis and testing of local positions of the silicon wafer are needed, and therefore surface metal collection of the sector or semi-sector area of the silicon wafer is needed. The present application provides a silicon wafer surface metal collection method and device, which can realize scanning of a sector metal collection area.

[0053] An embodiment of the present application provides a silicon wafer surface metal collection device, as shown in Figure 4 and Figure 5 The device comprises:

[0054] a carrier table 1 for carrying a silicon wafer, which can carry the silicon wafer to rotate with the carrier table 1;

[0055] a scanning head 3 arranged on one side of the carrier table 1, which is used for sucking scanning liquid to scan the silicon wafer and emit a positioning signal;

[0056] a detector 4 fixed on one side of the carrier table 1, which is used for receiving the positioning signal emitted by the scanning head 3 and detecting the linear distance between the detector 4 and the scanning head 3 according to the positioning signal;

[0057] a controller configured to control the motion state of the scanning head 3 and the detector 4 according to the straight-line distance between the detector 4 and the scanning head 3.

[0058] In this embodiment, the scanning head 3 scans the silicon wafer by sucking the scanning liquid and emits a positioning signal; the detector 4 receives the positioning signal emitted by the scanning head 3, detects the straight-line distance between the detector 4 and the scanning head 3 according to the positioning signal; and the controller controls the motion state of the scanning head 3 and the detector 4 according to the straight-line distance between the detector 4 and the scanning head 3. Through the control of the controller on the motion state of the scanning head 3 and the detector 4, the preset area for metal collection on the surface of the silicon wafer can be a scanning area of various shapes, including a fan-shaped area of a preset angle. Compared with the prior art which can only perform metal scanning through a spiral scanning mode, this embodiment enriches the scanning mode of metal collection on the surface of the silicon wafer and also enriches the shape of the scanning area (i.e. the metal collection area), so that surface scanning of a fan-shaped area of any angle can be realized, and the operability and accuracy of the analysis of the surface of the silicon wafer are effectively improved.

[0059] In some embodiments, the device further comprises:

[0060] a rotating support 2 fixed on the object table 1, a first end of the rotating support 2 being capable of moving along the radial direction of the object table 1;

[0061] a scanning arm 5 fixed on the first end of the rotating support 2, the scanning arm 5 extending in the vertical direction, and the scanning head 3 being arranged on the scanning arm 5 and being capable of moving up and down along the scanning arm 5.

[0062] When scanning the silicon wafer, the relative position between the scanning head 3 and the silicon wafer can be adjusted by the rotating support 2, and the scanning liquid on the scanning head 3 can be brought into contact with or out of contact with the silicon wafer by adjusting the position of the scanning head 3 on the scanning arm 5.

[0063] In some embodiments, the controller is specifically configured to control the scanning head 3 and the detector 4 to move to a starting scanning position on the silicon wafer, and repeatedly perform the scanning step until the detector 4 and the scanning head 3 reach a target scanning position.

[0064] The scanning step comprises: controlling the detector 4 to rotate around the center of the silicon wafer in a first direction from a current position, and stopping the rotation when the straight-line distance between the detector 4 and the scanning head 3 reaches a preset distance for the first or second time; controlling the scanning liquid sucked by the scanning head 3 to be in contact with the silicon wafer; and controlling the detector 4 and the object table to rotate around the center of the silicon wafer in a second direction opposite to the first direction at the same angular velocity, and stopping the rotation when the distance between the detector 4 and the scanning head 3 is 0.

[0065] controlling the detector 4 and the scanning head 3 to move in a first direction towards the center of the wafer by a first distance, controlling the detector 4 to rotate around the center of the wafer in a second direction from the current position, stopping the rotation when the distance between the detector 4 and the scanning head 3 reaches the preset distance for the first time or the second time; controlling the scanning head 3 to contact the wafer with the scanning liquid; controlling the detector 4 and the wafer stage to rotate around the center of the wafer in the first direction at the same angular velocity, stopping the rotation when the distance between the detector 4 and the scanning head 3 is 0;

[0066] wherein the first direction and the second direction are selected from the clockwise direction and the counterclockwise direction.

[0067] By repeating the above scanning steps, a scanning trajectory as shown in FIG. 6 can be obtained, so as to realize the surface scanning of the fan-shaped region with an arbitrary angle. Figure 6

[0068] In the above scanning steps, when the angle corresponding to the target fan-shaped region to be scanned is less than or equal to 180 degrees, the rotation is stopped when the distance between the detector 4 and the scanning head 3 reaches the preset distance for the first time; when the angle corresponding to the target fan-shaped region to be scanned is greater than 180 degrees, the rotation is stopped when the distance between the detector 4 and the scanning head 3 reaches the preset distance for the second time.

[0069] In the embodiment, the starting scanning position on the wafer can be a position point on the edge of the wafer, and the target scanning position can be the center of the wafer, so as to realize the scanning of the fan-shaped region on the wafer (the radius of the fan-shaped region is the same as the radius of the wafer). Alternatively, the starting scanning position on the wafer can also be a point on the outer arc-shaped edge of an arbitrary fan-shaped region on the wafer, and the target scanning position can also be a point on the inner arc-shaped edge of the arbitrary fan-shaped region on the wafer, so as to realize the scanning of the arbitrary fan-shaped region on the wafer (the radius of the fan-shaped region is less than the radius of the wafer).

[0070] Taking the scanning of the fan-shaped region with an angle of a on the wafer as an example, the scanning head 3 and the detector 4 are first moved to the edge of the wafer or the outer arc-shaped edge of the fan-shaped region to be tested, then the scanning head 3 is kept stationary, and the detector 4 rotates clockwise or counterclockwise along the center direction of the wafer, as shown in FIG. 5, when the detector 4 detects that the straight-line distance between the detector 4 and the scanning head 3 is d, it can be determined whether the fan-shaped angle a is reached by the following formula, Figure 7

[0071]

[0072] ​​Wherein, when the angle corresponding to the target fan-shaped area to be scanned is less than or equal to 180 degrees, the alpha is the angle corresponding to the target fan-shaped area to be scanned; when the angle corresponding to the target fan-shaped area to be scanned is greater than 180 degrees, the alpha is the supplementary angle of the angle corresponding to the target fan-shaped area to be scanned, and the R is the distance between the detector and the center of the silicon wafer.

[0073] When the scanning starts, the first step scanning includes: when the linear distance d between the scanning head 3 and the detector 4 satisfies the formula (1), the scanning head 3 is vertically moved downwards so that the scanning liquid in the scanning head 3 is in contact with the surface of the silicon wafer, the detector 4 is rotated along the counterclockwise or clockwise direction at the same angular velocity with the silicon wafer being driven by the carrier table 1, and when the linear distance d between the scanning head 3 and the detector 4 is 0, the first step scanning is ended. In the second step scanning, the scanning head 3 and the detector 4 are simultaneously moved towards the center of the silicon wafer by a certain distance, the detector 4 is rotated along the counterclockwise or clockwise direction along the center direction of the silicon wafer, when the detector 4 detects that the linear distance between the detector 4 and the scanning head 3 is d, the detector 4 stops moving, the scanning head 3 is again vertically moved downwards so that the scanning liquid in the scanning head 3 is in contact with the surface of the silicon wafer, the detector 4 is rotated along the clockwise or counterclockwise direction at the same angular velocity with the silicon wafer being driven by the carrier table 1, and when the linear distance d between the scanning head 3 and the detector 4 is 0, the second step scanning is ended. The above two step scanning actions are repeated, and when the detector 4 or the scanning head 3 reaches the center of the silicon wafer or the inner arc edge of the target fan-shaped area on the silicon wafer, the scanning is ended.

[0074] Wherein, when the linear distance between the detector 4 and the scanning head 3 is d, the angle between the line connecting the detector 4 and the center of the silicon wafer and the line connecting the scanning head 3 and the center of the silicon wafer is the angle corresponding to the target fan-shaped area to be scanned or the supplementary angle alpha.

[0075] When the angle corresponding to the target fan-shaped area to be scanned is greater than 180 degrees, similar to the above scanning action, the angle between the detector 4 and the scanning head 3 reaches the supplementary angle alpha, and then the action and scanning in the opposite direction can be performed.

[0076] The embodiment of the present application also provides a silicon wafer surface metal collecting method applied to the silicon wafer surface metal collecting device as described above, and the method comprises the following steps:

[0077] Controlling the carrier table 1 to carry the silicon wafer to rotate with the carrier table 1;

[0078] Controlling the scanning head 3 to suck the scanning liquid to scan the silicon wafer and emit a positioning signal;

[0079] Controlling the detector 4 to receive the positioning signal emitted by the scanning head 3 and detect the linear distance between the detector 4 and the scanning head 3 according to the positioning signal;

[0080] The movement state of the scanning head 3 and the detector 4 is controlled according to the straight-line distance between the detector 4 and the scanning head 3.

[0081] In the embodiment, the object table 1 is used to carry the silicon wafer and make the silicon wafer rotate with the object table 1. The scanning head 3 and the detector 4 are fixed by the rotating support 2 respectively. The scanning head 3 is used to suck the scanning liquid to scan the silicon wafer. The scanning head 3 can emit signals in a circle around the scanning head 3. The detector 4 has a detection function in a circle around the detector 4 and can receive the signals emitted by the scanning head 3, so as to detect the straight-line distance between the detector 4 and the scanning head 3. The scanning head 3 and the detector 4 can move radially along the support arm of the rotating support 2 towards the center of the silicon wafer. In addition, the scanning head 3 can move up and down in the vertical direction along the scanning arm 5 of the rotating support.

[0082] In some embodiments, the movement state of the scanning head 3 and the detector 4 is controlled according to the straight-line distance between the detector 4 and the scanning head 3, including:

[0083] The scanning head 3 and the detector 4 are controlled to move to the starting scanning position on the silicon wafer; and the scanning step is repeatedly executed until the detector and the scanning head reach the target scanning position.

[0084] The scanning step includes: controlling the detector 4 to rotate in a first direction around the center of the silicon wafer from the current position, and stopping the rotation when the straight-line distance between the detector 4 and the scanning head 3 reaches a preset distance for the first time or the second time; controlling the scanning liquid sucked by the scanning head 3 to contact the silicon wafer; and controlling the detector 4 and the object table to rotate in a second direction opposite to the first direction around the center of the silicon wafer at the same angular velocity, and stopping the rotation when the distance between the detector 4 and the scanning head 3 is 0.

[0085] The scanning head 3 and the detector 4 are controlled to move simultaneously in the radial direction of the silicon wafer by a first distance towards the center of the silicon wafer, the detector 4 is controlled to rotate in a second direction around the center of the silicon wafer from the current position, and the rotation is stopped when the straight-line distance between the detector 4 and the scanning head 3 reaches a preset distance for the first time or the second time; the scanning liquid sucked by the scanning head 3 is controlled to contact the silicon wafer; and the detector 4 and the object table are controlled to rotate in the first direction around the center of the silicon wafer at the same angular velocity, and the rotation is stopped when the distance between the detector 4 and the scanning head 3 is 0.

[0086] The first direction and the second direction are selected from the clockwise direction and the counterclockwise direction.

[0087] In the scanning step, when the angle corresponding to the target fan-shaped region to be scanned is less than or equal to 180 degrees, the rotation is stopped when the straight-line distance between the detector 4 and the scanning head 3 reaches the preset distance for the first time; when the angle corresponding to the target fan-shaped region to be scanned is greater than 180 degrees, the rotation is stopped when the straight-line distance between the detector 4 and the scanning head 3 reaches the preset distance for the second time.

[0088] In the embodiment, the initial scanning position on the silicon wafer can be a position point on the edge of the silicon wafer, and the target scanning position can be the center of the silicon wafer, so that the scanning of a fan-shaped region on the silicon wafer (the radius of the fan-shaped region is the same as the radius of the silicon wafer) can be realized. Alternatively, the initial scanning position on the silicon wafer can also be a point on the outer arc-shaped edge of an arbitrary fan-shaped region on the silicon wafer, and the target scanning position can also be a point on the inner arc-shaped edge of the arbitrary fan-shaped region on the silicon wafer, so that the scanning of an arbitrary fan-shaped region on the silicon wafer (the radius of the fan-shaped region is less than the radius of the silicon wafer) can be realized.

[0089] Taking the scanning of a fan-shaped region with an angle of a on the silicon wafer as an example, the scanning head 3 and the detector 4 are first moved to the edge of the silicon wafer or the outer arc-shaped edge of the fan-shaped region to be tested, then the scanning head 3 is kept stationary, and the detector 4 is rotated clockwise or counterclockwise along the direction of the center of the silicon wafer. When the detector 4 detects that the straight-line distance between the detector 4 and the scanning head 3 is d, as shown in FIG. 2, whether the fan-shaped angle a is reached can be determined by the following formula, Figure 7

[0090]

[0091] wherein when the angle corresponding to the target fan-shaped region to be scanned is less than or equal to 180 degrees, a is the angle corresponding to the target fan-shaped region to be scanned; when the angle corresponding to the target fan-shaped region to be scanned is greater than 180 degrees, a is the supplementary angle of the angle corresponding to the target fan-shaped region to be scanned, and R is the distance between the detector and the center of the silicon wafer.

[0092] ​The embodiment of the present application further provides a computer readable storage medium, which stores a computer program. The computer program is executed by a processor to realize each process of the above-mentioned silicon wafer surface metal collection method embodiment and achieve the same technical effects. To avoid repetition, details are not described herein. The computer readable storage medium includes permanent and non-permanent, removable and non-removable media, which can realize information storage by any method or technology. The information can be computer readable instructions, data structure, program module or other data. Examples of the computer readable storage medium include, but are not limited to, phase change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technology, compact disc read-only memory (CD-ROM), digital versatile disc (DVD) or other optical storage, magnetic cassette tape, magnetic tape magnetic disk storage or other magnetic storage, terminal device to be detected or any other non-transmission medium, which can be used to store information that can be accessed by the computer terminal device to be detected. According to the definition herein, the computer readable storage medium does not include transitory computer readable medium (transitory medium), such as modulated data signal and carrier wave.

[0093] The embodiment of the present application further provides a computer program product, which includes computer instructions. The computer instructions are executed by a processor to realize each process of the above-mentioned method embodiment and achieve the same technical effects. To avoid repetition, details are not described herein.

[0094] It should be noted that, in this paper, the term "including", "containing" or any other variant thereof is intended to cover non-exclusive inclusion, so that the process, method, article or device including a series of elements not only includes those elements, but also includes other elements not explicitly listed or inherent to such process, method, article or device. Without more limitations, the element defined by the statement "including a" does not exclude the presence of another identical element in the process, method, article or device including the element.

[0095] Those skilled in the art can clearly understand the method of the above-mentioned embodiments can be realized by means of software and necessary general hardware platform, of course, also can be realized by hardware, but in many cases, the former is a better embodiment. Based on such understanding, the technical solutions of the present application can be embodied in the form of software product, and the computer software product is stored in a storage medium (such as ROM / RAM, magnetic disk, optical disk), including a plurality of instructions to make a terminal (may be a mobile phone, computer, server, air conditioner, or network equipment, etc.) execute the method described in various embodiments of the present application.

[0096] In the method embodiments of the present disclosure, the serial numbers of the steps cannot be used to limit the sequence of the steps, and for those skilled in the art, the changes of the sequence of the steps without creative efforts are within the protection scope of the present disclosure.

[0097] It should be noted that each embodiment in the present specification is described in a progressive manner, and the same or similar parts between each embodiment can be referred to each other, and each embodiment mainly describes the difference from other embodiments. Especially, for the embodiment, since it is basically similar to the product embodiment, the description is relatively simple, and the related parts can be referred to the part of the description of the product embodiment.

[0098] The above is the preferred embodiment of the present disclosure, it should be pointed out that, for those skilled in the art, without departing from the principles of the present disclosure, can make a number of improvements and refinements, these improvements and refinements should also be considered as the protection scope of the present disclosure.

Claims

1. A metal collection device for silicon wafer surface, characterized in that, The device comprises: a carrier table for carrying a silicon wafer, capable of carrying the silicon wafer to rotate with the carrier table; a scanning head arranged on one side of the carrier table, for sucking scanning liquid to scan the silicon wafer and emit a positioning signal; a detector fixed on one side of the carrier table, for receiving the positioning signal emitted by the scanning head, and detecting the linear distance between the detector and the scanning head according to the positioning signal; a controller for controlling the motion state of the scanning head and the detector according to the linear distance between the detector and the scanning head; the controller is specifically configured to control the scanning head and the detector to move to a starting scanning position on the silicon wafer; and repeatedly perform a scanning step until the detector and the scanning head reach a target scanning position; the scanning step comprises: controlling the detector to rotate around the center of the silicon wafer in a first direction from the current position, and stopping the rotation when the linear distance between the detector and the scanning head reaches a preset distance for the first or second time; controlling the scanning liquid sucked by the scanning head to contact the silicon wafer; controlling the detector and the carrier table to rotate around the center of the silicon wafer in a second direction opposite to the first direction at the same angular velocity, and stopping the rotation when the distance between the detector and the scanning head is 0; controlling the detector and the scanning head to move simultaneously in the radial direction of the silicon wafer by a first distance towards the center of the silicon wafer, controlling the detector to rotate around the center of the silicon wafer in the second direction from the current position, and stopping the rotation when the linear distance between the detector and the scanning head reaches the preset distance for the first or second time; controlling the scanning liquid sucked by the scanning head to contact the silicon wafer; controlling the detector and the carrier table to rotate around the center of the silicon wafer in the first direction at the same angular velocity, and stopping the rotation when the distance between the detector and the scanning head is 0; wherein the first direction and the second direction are selected from the clockwise direction and the counterclockwise direction; the preset distance satisfies: a = 2arcsin ; wherein d is the preset distance, a is the angle corresponding to the target fan-shaped region to be scanned when the angle corresponding to the target fan-shaped region to be scanned is less than or equal to 180 degrees, a is the supplementary angle of the angle corresponding to the target fan-shaped region to be scanned when the angle corresponding to the target fan-shaped region to be scanned is greater than 180 degrees, and R is the distance between the detector and the center of the silicon wafer.

2. The silicon wafer surface metal collection apparatus of claim 1, wherein the device further comprises: a rotating support fixed on the carrier table, a first end of the rotating support being capable of moving in the radial direction of the carrier table; a scanning arm fixed on the first end of the rotating support, the scanning arm extending in the vertical direction, and the scanning head being arranged on the scanning arm and being capable of moving up and down along the scanning arm.

3. The silicon wafer surface metal collection apparatus of claim 1, wherein The target scanning position is the center of the silicon wafer or a point on the inner arc edge of any sector region on the silicon wafer.

4. A method of collecting metal from the surface of a silicon wafer, characterized by, The method is applied to the silicon wafer surface metal collection device of any one of claims 1-3, and the method comprises: controlling the carrier table to carry the silicon wafer to rotate with the carrier table; controlling the scanning head to suck scanning liquid to scan the silicon wafer and emit a positioning signal; controlling the detector to receive the positioning signal emitted by the scanning head, and detecting the linear distance between the detector and the scanning head according to the positioning signal; controlling the motion state of the scanning head and the detector according to the linear distance between the detector and the scanning head.

5. A computer readable storage medium, characterized in that, The computer readable storage medium stores a computer program, and the computer program is executed by the processor to implement the steps of the method for collecting metal on the surface of a silicon wafer according to claim 4.

6. A computer program product, characterised in that, The computer readable storage medium stores a computer program, and the computer program is executed by the processor to implement the steps of the method for collecting metal on the surface of a silicon wafer according to claim 4.

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