Microelectronic photoetching lift-off processing method and microelectronic device

By forming a dissolving-resistant layer in the lithography lift-off process and dissolving it, the problem of poor corrosion effect in the production of high resolution and small-size graphics is solved, and high stability and high precision graphics transfer is achieved.

CN119689801AInactive Publication Date: 2025-03-25HUATONGXINDIAN (NANCHANG) ELECTRONIC TECH CO LTD
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Patent Information

Application Number
CN202510207126.4
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-02-25
Publication Date
2025-03-25
Estimated Expiration
Not applicable · inactive patent

AI Technical Summary

Technical Problem

Traditional lithography lift-off technology has problems such as poor corrosion effect and unclear edges in high-resolution and small-size graphics production, which affects the quality of graphics and the stability and reliability of metal graphics.

Method used

The dissolution-resistant layer is formed by performing azo coupling reaction on the surface of the photoresist material layer, and the dissolution-resistant layer and the photoresist material layer are dissolved by the second developer to form a preset pattern, and metal material is deposited on the substrate to complete the photolithography and lift off operation.

Benefits of technology

It improves the solubility of unexposed areas, significantly improves the stability and accuracy of graph transfer, and generates highly recovered and clear edges, suitable for submicron and even nano-level graphics production.

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Abstract

The invention provides a microelectronic photoetching lift-off processing method and a microelectronic device. The processing method comprises the following steps: providing a substrate; one end of the substrate is coated with a photoresist material layer, and the photoresist material layer at least comprises a diazonaphthoquinone photosensitizer; putting the epitaxial wafer coated with the photoresist material layer into a first developing solution for soaking so as to form a dissolution-resistant layer on the surface of the photoresist material layer; performing pattern exposure processing on the epitaxial wafer according to a preset pattern; carrying out developing treatment on the exposed epitaxial wafer by adopting a second developing solution, and dissolving the dissolution-resistant layer subjected to the exposure reaction and the photoresist material layer at the bottom of the dissolution-resistant layer so as to form a preset pattern on the substrate; and depositing a metal material on the surface of the epitaxial wafer on which the preset pattern is formed, and removing the residual photoresist material layer to form a metal pattern on the surface of the substrate so as to complete photoetching lift-off operation. The microelectronic photoetching lift-off processing method disclosed by the invention is high in precision and good in pattern transfer quality.
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