Method for bonding semiconductor chips and bonding apparatus

Abstract

A method of bonding a semiconductor chip is described. The method includes the following steps. A semiconductor chip is disposed on a chuck table of a bonding apparatus. A bonding head of a bonding device is driven to pick up a first semiconductor chip from a support table, wherein the first semiconductor chip has a first warpage amount. The bonding head is driven to move the first semiconductor chip to a position above the first bonding area of the semiconductor wafer. A deformation process is performed using a deformation mechanism to deform a first bonding region of the chuck table and the semiconductor wafer to have a first deformation amount, where the first deformation amount corresponds to the first warpage amount. A first semiconductor chip is bonded to a first bonding region of the semiconductor wafer while maintaining the first deformation amount. Deformation of the chuck table by the deformation mechanism is released.

Description

Technical Field

[0001] The present disclosure is directed to a method and a device for bonding semiconductor chips. Background Art

[0002] In recent years, the semiconductor industry has experienced rapid growth due to the increasing integration of various electronic components (such as transistors, diodes, resistors, capacitors, etc.). The increase in integration comes largely from the continuous reduction of the minimum feature size to allow more components to be integrated into a given area. In recent years, with the growing demand for miniaturization, higher speed and greater bandwidth, as well as lower power consumption and latency, the demand for packaging technology for smaller and more innovative semiconductor dies has also continued to grow. In the process of progress and innovation, the formation of semiconductor components generally involves bonding two or more semiconductor wafers together, or bonding two or more semiconductor chips on a semiconductor wafer. Summary of the invention

[0003] An embodiment of the present disclosure provides a method for bonding semiconductor chips, comprising the following steps. A semiconductor wafer is set on a chuck table of a bonding device. A bonding head of the bonding device is driven to pick up a first semiconductor chip from a support table, wherein the first semiconductor chip has a first warpage amount. The bonding head is driven to move the first semiconductor chip to a position above a first bonding area of ​​the semiconductor wafer. A deformation process is performed using a deformation mechanism of the bonding device to deform the chuck table and deform the first bonding area of ​​the semiconductor wafer to have a first deformation amount, wherein the first deformation amount corresponds to the first warpage amount. The first semiconductor chip is bonded to the first bonding area of ​​the semiconductor wafer while maintaining the first deformation amount of the semiconductor chip. The deformation of the chuck table by the deformation mechanism is released.

[0004] The present disclosure further provides a method for bonding semiconductor chips, comprising the following steps. A semiconductor wafer is placed on a chuck table, wherein the semiconductor wafer includes a first bonding area for a first semiconductor chip. A first warpage amount of the first semiconductor chip is measured to determine a main bonding position of the first semiconductor chip. A deformation process is performed on the chuck table and the semiconductor wafer, wherein after the deformation process, a wafer bonding position in the first bonding area of ​​the semiconductor wafer protrudes toward a main bonding position of the first semiconductor chip. The first semiconductor chip is bonded to the semiconductor wafer by bonding the main bonding position of the first semiconductor chip to the chip bonding position in the first bonding area of ​​the semiconductor wafer.

[0005] The embodiment of the present disclosure further provides a bonding device, including a chuck table, a door-shaped frame, a bonding head, and a deformation mechanism. The chuck table is used to support a semiconductor wafer. The door-shaped frame is arranged on the chuck table. The bonding head is movably mounted on the door-shaped frame, wherein the bonding head is used to pick up a semiconductor chip from the support table and to move the semiconductor chip to the chuck table to be bonded to the semiconductor wafer. The deformation mechanism is located below the chuck table, wherein when the semiconductor chip is bonded to the semiconductor wafer, the deformation mechanism is configured to deform the chuck table together with the semiconductor wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] The various aspects of the present disclosure will be best understood by reading the following detailed description with reference to the accompanying drawings. It should be noted that, in accordance with standard practice in the industry, various features are not drawn to scale. In fact, the critical dimensions of various features may be arbitrarily increased or decreased for clarity of discussion.

[0007] Figures 1 to 17B are schematic cross-sectional and top plan views of various stages in a method of bonding semiconductor chips according to some exemplary embodiments of the present disclosure.

[0008] FIG. 18A to FIG. 18B are schematic cross-sectional views of various stages in a method of bonding semiconductor chips according to some exemplary embodiments of the present disclosure.

[0009] Description of Reference Numerals

[0010] 102: Semiconductor wafer

[0011] 102A: Joint area

[0012] 102A-1: First bonding area

[0013] 102A-2: Second bonding area

[0014] 102DX: First deformation

[0015] 202: Semiconductor chips

[0016] 202A: Joining surface

[0017] 202B: Back

[0018] 202C: Boundary

[0019] 202DX: Maximum height difference

[0020] 202-1: The first semiconductor chip

[0021] 202-2: Second semiconductor chip

[0022] 402: Pin structure

[0023] 402A: First pin structure

[0024] 402B: Second pin structure

[0025] 404: Vacuum suction tube

[0026] CE1: Conductive Components

[0027] CT1: Conductive terminal

[0028] DV: Engagement Device

[0029] D10: Door frame

[0030] D20: Guide

[0031] D30: Jointing head

[0032] D40: Chuck table

[0033] D40-BS: Back

[0034] D45: Deformation mechanism

[0035] D50: Support table

[0036] MB1: Main Engagement Position

[0037] WB1: Wafer bonding position

[0038] V0, V1, V2, V3, V4: Vacuum suction DETAILED DESCRIPTION

[0039] The following disclosure provides many different embodiments or examples for implementing the different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are only examples and are not intended to be limiting. For example, in the following description, forming a second feature on or on a first feature may include an embodiment in which the second feature is formed to be in direct contact with the first feature, and may also include an embodiment in which an additional feature may be formed between the second feature and the first feature, thereby making it possible for the second feature to not be in direct contact with the first feature. In addition, the present disclosure may reuse component symbols and / or letters in various examples. This repetition is for the purpose of simplicity and clarity, and does not itself indicate the relationship between the various embodiments and / or configurations discussed.

[0040] Additionally, for ease of description, spatially relative terms such as "beneath," "below," "lower," "above," "upper," etc. may be used herein to describe the relationship of one component or feature shown in a figure to another (other) component or feature. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientations depicted in the figures. The device may have other orientations (rotated 90 degrees or in other orientations), and the spatially relative terms used herein may be interpreted accordingly.

[0041] During the process of bonding a semiconductor chip to a semiconductor wafer, an interface bulge defect may occur due to local warping of the top die (chip). As the chip-on-wafer (CoW) pad size / pitch decreases, the local warping of the top chip will lead to greater expansion and resulting overlay shift, which will lead to mismatch of the chip bonding, resulting in concerns in wafer acceptance testing (WAT). In some embodiments of the present disclosure, in order to prevent the interface bulge defect caused by the warping of the top die, the bottom wafer is deformed to compensate for the warping of the top die.

[0042] Figures 1 to 17B Schematic cross-sectional views and top views of various stages in a method for bonding semiconductor chips according to some exemplary embodiments of the present disclosure. The method for bonding semiconductor chips disclosed in the present disclosure is, for example, a method for bonding a semiconductor chip to a semiconductor wafer, or a method for bonding a chip on a wafer (CoW). Figure 1 In some embodiments, the bonding device DV is used to bond the semiconductor chip 202 (or semiconductor die) to the semiconductor wafer 102 .

[0043] like Figure 1 As shown, the bonding device DV includes a gantry frame D10, a guide piece D20, a bonding head D30, a chuck table D40, a deformation mechanism D45, and a support table D50. The guide piece D20 and the bonding head D30 are movably mounted on the gantry frame D10. The movement of the bonding head D30 can be controlled by a driving unit (e.g., a motor, a controller, and a processor, etc.; not shown). For example, the driving unit of the gantry frame D10 is configured to drive the bonding head D30 to a position between the chuck table D40 and the support table D50. In some embodiments, the bonding head D30 is controlled to move downward and pick up the semiconductor chip 202 from the support table D50, and move the semiconductor chip 202 toward the chuck table D40.

[0044] The chuck table D40 is used to support the semiconductor wafer 102. For example, the chuck table D40 may include a clamp (not shown) or other fixing mechanism for fixing the semiconductor wafer 102 located above it. In some embodiments, the chuck table D40 includes a drive unit (e.g., a motor, a controller, and a processor, etc.; not shown) for adjusting the x position, y position, z position and / or angular position of the chuck table D40. In some embodiments, the chuck table D40 is a deformable chuck table and can be made of any deformable material or flexible material. For example, the chuck table D40 may include a flexible organic material, a polymer material, etc. In some embodiments, the chuck table D40 is deformed by a deformation mechanism D45 in the joint device DV. In some embodiments, the deformation mechanism D45 is configured to deform the chuck table D40 together with the semiconductor wafer 102 located thereon.

[0045] refer to Figure 1 In the method for bonding semiconductor chips disclosed in the present invention, the semiconductor wafer 102 is first placed on the chuck stage D40 of the bonding device DV, and the semiconductor chip 202 is placed on the support stage D50. In some embodiments, the semiconductor wafer 102 includes active components, passive components, a redistribution layer, one or more conductive components, and a dielectric layer formed therein. Figure 2 As further shown, from a top view of the semiconductor wafer 102 , the semiconductor wafer 102 includes a plurality of bonding regions 102A, wherein the bonding regions 102A are regions on the semiconductor wafer 102 for bonding to the semiconductor chips 202 .

[0046] Before bonding the semiconductor chips 202 to the semiconductor wafer 102, the warpage of each semiconductor chip 202 is measured to determine the main bonding position of the semiconductor chip 202. For example, FIG. 3A to FIG. 3F FIG. 2 shows semiconductor chips 202 with different types of warpage and how to determine the main bonding position MB1 in the semiconductor chip 202. FIG. 3A to FIG. 3F As shown, the semiconductor chip 202 has a bonding surface 202A, a back surface 202B opposite to the bonding surface 202A, and a boundary 202C connecting the bonding surface 202A and the back surface 202B.

[0047] exist FIG. 3A to FIG. 3CIn the illustrated embodiment, the semiconductor chip 202 has a smile warpage, wherein the bonding surface 202A bends outwardly in a direction away from the semiconductor wafer 102 when bonding. In some embodiments, the position on the bonding surface 202A of the semiconductor chip 202 having the maximum height difference 202DX relative to the boundary 202C of the semiconductor chip 202 is determined as the main bonding position MB1 of the semiconductor chip 202. For example, the maximum height difference 202DX at the bonding surface 202A of the semiconductor chip 202 is the height difference measured from the central area of ​​the semiconductor chip 202 to the boundary 202C. In some embodiments, the maximum height difference 202DX at the bonding surface 202A of the semiconductor chip 202 also corresponds to the warpage amount of the semiconductor chip 202. FIG. 3A to FIG. 3C As further shown, the main bonding position MB1 of the semiconductor chip 202 is not particularly limited, but can be located in the central area ( Figure 3A ), or may be to the left of the semiconductor chip 202 (see Figure 3B ) or right side (see Figure 3C ) position is tilted.

[0048] exist Figures 3D to 3F In the illustrated embodiment, the semiconductor chip 202 has a weeping-type warpage, wherein the bonding surface 202A bends inwardly in a direction facing the semiconductor wafer 102 when bonding. In some embodiments, the position on the bonding surface 202A of the semiconductor chip 202 having the maximum height difference 202DX relative to the boundary 202C of the semiconductor chip 202 is determined as the warpage amount of the semiconductor chip 202. Figures 3D to 3F As shown, the position having the maximum height difference 202DX is not particularly limited, but may be located in the central area ( Figure 3D ), or may be to the left of the semiconductor chip 202 (see Figure 3E ) or right side ( Figure 3F ) is inclined. In addition, in the exemplary embodiment, since the semiconductor chip 202 has a weeping-type warpage, an edge portion at the bonding surface 202A of the semiconductor chip 202 is determined as the main bonding position MB1 of the semiconductor chip 202 .

[0049] refer to Figure 4After measuring the first warpage amount of the first semiconductor chip 202-1 (from the semiconductor chip 202) to determine the main bonding position MB1 of the first semiconductor chip 202-1, the bonding of the first semiconductor chip 202-1 is performed using the bonding device DV to perform a pick-up process and a placement / bonding process. For example, in some embodiments, the bonding head D30 of the bonding device DV is driven to a position above the support table D50 to pick up the first semiconductor chip 202-1 from the support table D50. The first semiconductor chip 202-1 may have a FIG. 3A to FIG. 3F The first warping amount corresponding to the maximum height difference 202DX shown in any of the embodiments.

[0050] Then, refer to Figure 5A and Figure 5B , driving the bonding head D30 to move the first semiconductor chip 202-1 to a position above the first bonding region 102A-1 of the semiconductor wafer 102. The position of the first bonding region 102A-1 on the semiconductor wafer 102 is not particularly limited and can be appropriately adjusted based on bonding requirements. Figure 5A As shown, and from Figure 5B From the top view of the semiconductor wafer 102 shown, a bonding process for bonding the first semiconductor chip 202-1 to the first bonding region 102A-1 of the semiconductor wafer 102 can be performed. It should be understood that although only one bonding head D30 is shown as an example, more than one bonding head D30 can actually be installed on the guide D20. For example, multiple bonding heads D30 can perform the pick-and-place process in turn, and each bonding head D30 can be controlled independently of the actions of other bonding heads D30.

[0051] In the bonding process of bonding the first semiconductor chip 202-1 to the first bonding region 102A-1 of the semiconductor wafer 102, a deformation process is performed using the deformation mechanism D45 of the bonding device DV so that the chuck stage D40 and the first bonding region 102A-1 of the semiconductor wafer 102 are deformed together. Depending on whether the first semiconductor chip 202-1 has a smile-type warp or a cry-type warp, different deformation processes can be performed using the deformation mechanism D45. FIG. 6A to FIG. 15 Describe the different deformation and bonding processes.

[0052] FIG. 6A to FIG. 6C is a schematic cross-sectional view of various stages in a method of bonding a semiconductor chip to a semiconductor wafer according to some embodiments of the present disclosure. Fig. 6A In some embodiments, the first semiconductor chip 202 - 1 has Figure 3AThe smile-type warpage of the corresponding first warpage amount (maximum height difference 202DX) described. In addition, the first semiconductor chip 202-1 includes a plurality of conductive terminals CT1 located on the bonding surface 202A of the first semiconductor chip 202-1, which are used to be bonded to the conductive component CE1 located on the surface of the first bonding area 102A-1 of the semiconductor wafer 102. In some embodiments, the bonding includes a metal-to-metal bonding technology, a dielectric-to-dielectric bonding technology, or a combination thereof. In some embodiments, before bonding the first semiconductor chip 202-1 to the semiconductor wafer 102, a deformation process of the chuck table D40 and the first bonding area 102A-1 of the semiconductor wafer 102 is performed using a deformation mechanism D45. In an exemplary embodiment, the deformation mechanism D45 includes a pin structure 402, and the pin structure 402 has a structural strength that deforms the chuck table D40 together with the semiconductor wafer 102 when pushed onto the back side D40-BS of the chuck table D40.

[0053] For example, refer to Figure 6B , the pin structure 402 is pushed toward the back side D40-BS of the chuck table D40, so that the wafer bonding position WB1 of the semiconductor wafer 102 protrudes toward the main bonding position MB1 of the first semiconductor chip 202-1. In other words, the wafer bonding position WB1 in the first bonding region 102A-1 of the semiconductor wafer 102 is protruded by the pressure of the pushing pin structure 402. In the exemplary embodiment, since the first semiconductor chip 202-1 has a smile-type warp, the first bonding region 102A-1 of the semiconductor wafer 102 is deformed to have a cry-type warp.

[0054] In some embodiments, the pin structure 402 is used to perform a deformation process so that the first bonding area 102A-1 of the semiconductor wafer 102 is deformed to have a first deformation amount 102DX. In an exemplary embodiment, the first deformation amount 102DX of the semiconductor wafer 102 corresponds to the first warpage amount (maximum height difference 202DX) of the first semiconductor chip 202-1. For example, in one embodiment, if the first warpage amount (maximum height difference 202DX) of the first semiconductor chip 202-1 is 50μm, the first deformation amount 102DX is set to about 50μm to compensate for the warpage of the first semiconductor chip 202-1. In some embodiments, the first deformation amount 102DX is controlled by adjusting the pushing force or adjusting the height of the pin structure 402.

[0055] Furthermore, in the illustrated embodiment, although the pin structure 402 is shown pressed onto the central area of ​​the first bonding area 102A-1 of the semiconductor wafer 102 to produce the protruding wafer bonding position WB1, it should be noted that the pressing of the pin structure 402 may be changed according to the main bonding position MB1 of the first semiconductor chip 202-1. For example, if the main bonding position MB1 is as Figure 3B or Figure 3C If the wafer bonding position WB1 is tilted to the left or right, the pin structure 402 can be pushed to make the wafer bonding position WB1 also tilted to the left or right.

[0056] refer to Figure 6C In some embodiments, bonding the first semiconductor chip 202-1 to the first bonding region 102A-1 of the semiconductor wafer 102 is achieved by aligning and bonding the main bonding position MB1 of the first semiconductor chip 202-1 with the wafer bonding position WB1 of the first bonding region 102A-1 of the semiconductor wafer 102. In some embodiments, bonding the first semiconductor chip 202-1 to the semiconductor wafer 102 further includes aligning and bonding the conductive terminal CT1 in the main bonding position MB1 of the first semiconductor chip 202-1 to the conductive component CE1 located in the wafer bonding position WB1 of the first bonding region 102A-1 of the semiconductor wafer 102. In some embodiments, bonding the first semiconductor chip 202-1 to the semiconductor wafer 102 is performed while maintaining the first deformation amount 102DX of the first bonding region 102A-1 of the semiconductor wafer 102. In some embodiments, bonding the first semiconductor chip 202-1 to the semiconductor wafer 102 can be achieved after the deformation mechanism is released D45 (the pin structure 402 is retracted). In an exemplary embodiment, since the first bonding region 102A- 1 of the semiconductor wafer 102 is deformed during bonding to the first semiconductor chip 202 - 1 , die warpage is compensated and the problem of die bonding mismatch is solved.

[0057] Fig. 7A and Figure 7B is a schematic cross-sectional view of a stage in a method of bonding a first semiconductor chip to a semiconductor wafer according to some alternative embodiments of the present disclosure. Fig. 7A and Figure 7B The method shown is similar to FIG. 6A to FIG. 6C Therefore, the same component symbols will be used to represent the same or similar parts, and will not be repeated here. In the above embodiment, although only one pin structure 402 is shown as the deformation mechanism D45, it is worth noting that the number of pin structures 402 is not limited to this. For example, referring to Fig. 7AIn one embodiment, the deformation mechanism D45 includes a plurality of pin structures 402 for pushing a central area of ​​the back side D40-BS of the chuck table D40 to deform the first bonding area 102A-1 of the semiconductor wafer 102 to have a first deformation amount 102DX. Figure 7B In another embodiment, the deformation mechanism D45 includes a plurality of pin structures (402A, 402B) for pushing respective regions of the back side D40-BS of the chuck table D40 so that the first bonding region 102A-1 of the semiconductor wafer 102 is deformed to have a first deformation amount 102DX. Figure 7B In the embodiment, the pin structure includes a first pin structure 402A and a second pin structure 402B, wherein the first pin structure 402A has a higher height than the second pin structure 402B. As can be seen from the above embodiment, the number and height of the pin structures 402 are not particularly limited, as long as the first bonding region 102A-1 of the semiconductor wafer 102 can be deformed to have a first deformation amount 102DX.

[0058] FIG. 8A to FIG. 8C are schematic cross-sectional views of various stages in a method of bonding a semiconductor chip to a semiconductor wafer according to some other embodiments of the present disclosure. FIG. 8A to FIG. 8C The method shown is similar to FIG. 6A to FIG. 6C Therefore, the same component symbols will be used to indicate the same or similar parts, and the detailed description will not be repeated here. Fig. 8A In some embodiments, the first semiconductor chip 202 - 1 has Figure 3D In some embodiments, before bonding the first semiconductor chip 202-1 to the semiconductor wafer 102, a deformation process of the chuck table D40 and the first bonding area 102A-1 of the semiconductor wafer 102 is performed using a deformation mechanism D45. In an exemplary embodiment, the deformation mechanism D45 includes a plurality of pin structures 402, which have a structural strength that deforms the chuck table D40 together with the semiconductor wafer 102 when pushed onto the back side D40-BS of the chuck table D40.

[0059] For example, refer to Figure 8B, is to push the pin structure 402 onto the back side D40-BS of the chuck table D40 so that the wafer bonding position WB1 located at the edge portion of the semiconductor wafer 102 protrudes toward the main bonding position MB1 of the first semiconductor chip 202-1. In other words, the protrusion of the wafer bonding position WB1 in the first bonding area 102A-1 of the semiconductor wafer 102 is generated by the pressure of pushing the pin structure 402. In an exemplary embodiment, since the first semiconductor chip 202-1 has a crying type warpage, the first bonding area 102A-1 of the semiconductor wafer 102 is deformed to have a smiling type warpage. In some embodiments, the deformation process is performed using the pin structure 402 so that the edge portion of the first bonding area 102A-1 of the semiconductor wafer 102 is deformed to have a first deformation amount 102DX. In an exemplary embodiment, the first deformation amount 102DX of the semiconductor wafer 102 is a first warpage amount (maximum height difference 202DX) corresponding to the first semiconductor chip 202-1.

[0060] refer to Figure 8C In some embodiments, bonding the first semiconductor chip 202-1 to the first bonding region 102A-1 of the semiconductor wafer 102 may be achieved by aligning and bonding a main bonding location MB1 at an edge portion of the first semiconductor chip 202-1 with a wafer bonding location WB1 in the first bonding region 102A-1 of the semiconductor wafer 102. In some embodiments, bonding the first semiconductor chip 202-1 to the semiconductor wafer 102 further includes aligning and bonding the conductive terminals CT1 in the main bonding locations MB1 of the first semiconductor chip 202-1 to the conductive components CE1 in the chip bonding locations WB1 of the first bonding region 102A-1 of the semiconductor wafer 102. In an exemplary embodiment, since the first bonding region 102A-1 of the semiconductor wafer 102 is deformed during bonding to the first semiconductor chip 202-1, die warpage is compensated and the problem of die bonding mismatch is solved.

[0061] Fig.9A and Fig. 9B is a schematic cross-sectional view of a stage in a method of bonding a first semiconductor chip to a semiconductor wafer according to some alternative embodiments of the present disclosure. Fig.9A and Fig. 9B The method shown is similar to FIG. 8A to FIG. 8C Therefore, the same component symbols will be used to represent the same or similar parts, and will not be repeated here. FIG. 8A to FIG. 8C In the illustrated embodiment, the pin structures 402 may be arranged in a single ring around the edge portion of the first bonding region 102A-1 of the semiconductor wafer 102. However, the present disclosure is not limited thereto. Fig.9A, the deformation mechanism D45 includes a plurality of pin structures 402 arranged in two rings and surrounding the edge portion of the first joint area 102A-1. For example, the pin structures 402 arranged in the first ring and the pin structures 402 arranged in the second ring may have substantially the same height.

[0062] In addition, reference Fig. 9B In some alternative embodiments, the deformation mechanism D45 includes a plurality of pin structures (402A, 402B) for pushing respective regions of the back side D40-BS of the chuck table D40 to deform the first bonding region 102A-1 of the semiconductor wafer 102 to have a first deformation amount 102DX. For example, Fig. 9B The pin structures in the embodiment include a first pin structure 402A and a second pin structure 402B, wherein the first pin structure 402A has a higher height than the second pin structure 402B. In addition, the first pin structures 402A are arranged in two rings to surround the edge portion of the first joint area 102A-1, while the second pin structures 402B are arranged in a ring between the center portion and the edge portion of the first joint area 102A-1.

[0063] FIG. 10A to FIG. 10C are schematic cross-sectional views of various stages in a method of bonding a semiconductor chip to a semiconductor wafer according to some other embodiments of the present disclosure. FIG. 10A to FIG. 10C The method shown is similar to FIG. 6A to FIG. 6C Therefore, the same component symbols will be used to indicate the same or similar parts, and the detailed description will not be repeated here. Fig. 10A In some embodiments, the first semiconductor chip 202 - 1 has Figure 3A The smile-type warpage of the corresponding first warpage amount (maximum height difference 202DX) described. In some embodiments, before the first semiconductor chip 202-1 is bonded to the semiconductor wafer 102, a deformation process of the chuck table D40 and the first bonding area 102A-1 of the semiconductor wafer 102 is performed using a deformation mechanism D45. In an exemplary embodiment, the deformation mechanism D45 includes a plurality of vacuum suction tubes 404. For example, the vacuum suction tubes 404 are configured to provide vacuum suction to the back side D40-BS of the chuck table D40, so that the first bonding area 102A-1 of the semiconductor wafer 102 is deformed to have the first deformation amount 102DX.

[0064] refer to Fig. 10B, when the deformation process is performed, the vacuum suction pipe 404 provides vacuum suction from the back side D40-BS of the chuck table D40 to the first bonding area 102A-1 of the semiconductor wafer 102, so that the applied vacuum suction increases from the wafer bonding position WB1 in the first bonding area 102A-1 to the position other than the wafer bonding position WB1 in the first bonding area 102A-1. For example, the vacuum suction applied to the wafer bonding position WB1 or the vicinity of the wafer bonding position WB1 is V0, and the vacuum suction applied near the edge portion of the first bonding area 102A-1 is V1. In an exemplary embodiment, the vacuum suction V0 is used to indicate that the vacuum is turned off, or to indicate that the minimum vacuum suction is provided to a specified area. In addition, the vacuum suction V1 indicates a vacuum suction that is stronger than V0, wherein the vacuum suction V1 is suitable for deforming the chuck table D40 together with the first bonding area 102A-1 of the semiconductor wafer 102 into a weeping-type warp.

[0065] refer to Fig. 10C In some embodiments, bonding the first semiconductor chip 202-1 to the first bonding region 102A-1 of the semiconductor wafer 102 is achieved by aligning and bonding the main bonding position MB1 of the first semiconductor chip 202-1 and the wafer bonding position WB1 of the first bonding region 102A-1 of the semiconductor wafer 102. In other words, bonding the first semiconductor chip 202-1 to the semiconductor wafer 102 further includes aligning and bonding the conductive terminal CT1 in the main bonding position MB1 of the first semiconductor chip 202-1 to the conductive component CE1 in the wafer bonding position WB1 in the first bonding region 102A-1 of the semiconductor wafer 102. In some embodiments, when bonding the first semiconductor chip 202-1 to the semiconductor wafer 102, the vacuum suction tube 404 is used to maintain the first deformation amount 102DX of the first bonding region 102A-1 of the semiconductor wafer 102. In some embodiments, after releasing the deformation mechanism D45 (closing the vacuum suction tube 404), bonding of the first semiconductor chip 202-1 to the semiconductor wafer 102 can be achieved. In an exemplary embodiment, since the first bonding region 102A- 1 of the semiconductor wafer 102 is deformed during bonding to the first semiconductor chip 202 - 1 , die warpage is compensated and the problem of die bonding mismatch is solved.

[0066] Fig.11 is a schematic cross-sectional view of a stage in a method of bonding a first semiconductor chip to a semiconductor wafer according to some alternative embodiments of the present disclosure. Fig.11 The method shown is similar to FIG. 10A to FIG. 10C Therefore, the same component symbols will be used to represent the same or similar parts, and will not be repeated here. Fig. 10CAs shown, the first bonding region 102A-1 of the semiconductor wafer 102 is deformed by providing the same vacuum suction force V1 to the edge portion of the first bonding region 102A-1 using the vacuum suction tube 404. However, the present disclosure is not limited thereto, wherein the deformation of the first bonding region 102A-1 of the semiconductor wafer 102 may also be performed by providing a varied vacuum suction force.

[0067] For example, refer to Fig.11 In some embodiments, the deformation process of the first bonding area 102A-1 is performed by using the vacuum suction tube 404 to provide different vacuum suction forces (V0 to V4) to the back side D40-BS of the first bonding area 102A-1, so that the applied vacuum suction force increases from the wafer bonding position WB1 in the first bonding area 102A-1 to the position other than the wafer bonding position WB1 in the first bonding area 102A-1. In an exemplary embodiment, the vacuum suction force applied to the wafer bonding position WB1 is V0, and the applied vacuum suction force increases from V0 to V4 from the wafer bonding position WB1 located in the center area to the edge portion of the first bonding area 102A-1. In an exemplary embodiment, the vacuum suction force V1 is greater than the vacuum suction force V0, the vacuum suction force V2 is greater than the vacuum suction force V1, the vacuum suction force V3 is greater than the vacuum suction force V2, and the vacuum suction force V4 is greater than the vacuum suction force V3. In the illustrated embodiment, since the first bonding region 102A- 1 of the semiconductor wafer 102 is deformed during bonding to the first semiconductor chip 202 - 1 , die warpage is compensated and the problem of die bonding mismatch is solved.

[0068] FIG. 12A to FIG. 12C are schematic cross-sectional views of various stages in a method of bonding a semiconductor chip to a semiconductor wafer according to some other embodiments of the present disclosure. FIG. 12A to FIG. 12C The method shown is similar to FIG. 10A to FIG. 10C Therefore, the same component symbols will be used to indicate the same or similar parts, and the detailed description will not be repeated here. Fig. 12A In some embodiments, the first semiconductor chip 202 - 1 has Figure 3DIn some embodiments, before the first semiconductor chip 202-1 is bonded to the semiconductor wafer 102, a deformation process of the first bonding region 102A-1 of the chuck table D40 and the semiconductor wafer 102 is performed using a deformation mechanism D45. In an exemplary embodiment, the deformation mechanism D45 includes a plurality of vacuum suction tubes 404. For example, the vacuum suction tubes 404 are configured to provide a vacuum suction force to the back side D40-BS of the chuck table D40 to deform the first bonding. The region 102A-1 of the semiconductor wafer 102 is deformed by the first deformation amount 102DX.

[0069] refer to Fig. 12B When performing the deformation process, the vacuum suction pipe 404 provides vacuum suction from the back side D40-BS of the chuck table D40 to the first bonding area 102A-1 of the semiconductor wafer 102, and the applied vacuum suction increases from the wafer bonding position WB1 at the edge portion of the first bonding area 102A-1 to the position other than the wafer bonding position WB1 in the first bonding area 102A-1. For example, the vacuum suction applied to the wafer bonding position WB1 at the edge portion of the first bonding area 102A-1 is V0, and the vacuum suction applied to the central area of ​​the first bonding area 102A-1 is V1. In an exemplary embodiment, the vacuum suction V0 is used to indicate that the vacuum is turned off, or to indicate that the minimum vacuum suction is provided to a specified area. In addition, the vacuum suction V1 indicates a vacuum suction stronger than V0, wherein the vacuum suction V1 is suitable for deforming the chuck table D40 together with the first bonding area 102A-1 of the semiconductor wafer 102 into a smile-shaped warp.

[0070] refer to Fig. 12CIn some embodiments, bonding the first semiconductor chip 202-1 to the first bonding region 102A-1 of the semiconductor wafer 102 is achieved by aligning and bonding the main bonding position MB1 of the first semiconductor chip 202-1 and the wafer bonding position WB1 of the first bonding region 102A-1 of the semiconductor wafer 102. In other words, bonding the first semiconductor chip 202-1 to the semiconductor wafer 102 further includes aligning and bonding the conductive terminal CT1 in the main bonding position MB1 of the first semiconductor chip 202-1 to the conductive component CE1 in the wafer bonding position WB1 in the first bonding region 102A-1 of the semiconductor wafer 102. In some embodiments, when bonding the first semiconductor chip 202-1 to the semiconductor wafer 102, the vacuum suction tube 404 is used to maintain the first deformation amount 102DX of the first bonding region 102A-1 of the semiconductor wafer 102. In some embodiments, after releasing the deformation mechanism D45 (closing the vacuum suction tube 404), bonding of the first semiconductor chip 202-1 to the semiconductor wafer 102 can be achieved. In an exemplary embodiment, since the first bonding region 102A- 1 of the semiconductor wafer 102 is deformed during bonding to the first semiconductor chip 202 - 1 , die warpage is compensated and the problem of die bonding mismatch is solved.

[0071] Fig.13 is a schematic cross-sectional view of a stage in a method of bonding a first semiconductor chip to a semiconductor wafer according to some alternative embodiments of the present disclosure. Fig.13 The method shown is similar to FIG. 12A to FIG. 12C Therefore, the same component symbols will be used to represent the same or similar parts, and will not be repeated here. Fig. 12C As shown, the first bonding region 102A-1 of the semiconductor wafer 102 is deformed by providing the same vacuum suction force V1 to the central region of the first bonding region 102A-1 using the vacuum suction tube 404. However, the present disclosure is not limited thereto, wherein the deformation of the smile-shaped warpage of the first bonding region 102A-1 of the semiconductor wafer 102 may also be performed by providing different vacuum suction forces.

[0072] refer to Fig.13In some embodiments, the deformation process of the first bonding area 102A-1 is performed by providing different vacuum suction forces (V0 to V3) to the back side D40-BS of the chuck table D40 using the vacuum suction tube 404, so that the applied vacuum suction force increases from the wafer bonding position WB1 at the edge portion of the first bonding area 102A-1 to the position other than the wafer bonding position WB1 in the first bonding area 102A-1. For example, in an exemplary embodiment, the vacuum suction force applied to the wafer bonding position WB1 at the edge portion of the first bonding area 102A-1 is V0, and the applied vacuum suction force increases from V0 to V3 from the edge portion of the wafer bonding position WB1 to the center area of ​​the first bonding area 102A-1. In an exemplary embodiment, the vacuum suction force V1 is greater than the vacuum suction force V0, the vacuum suction force V2 is greater than the vacuum suction force V1, and the vacuum suction force V3 is greater than the vacuum suction force V2. Furthermore, since the first bonding region 102A- 1 of the semiconductor wafer 102 is deformed during bonding to the first semiconductor chip 202 - 1 , die warpage is compensated and the problem of die bonding mismatch is solved.

[0073] Fig.14 is a schematic cross-sectional view of a stage in a method of bonding a first semiconductor chip to a semiconductor wafer according to some alternative embodiments of the present disclosure. Fig.14 The method shown is similar to Figure 7B Therefore, the same component symbols will be used to represent the same or similar parts, and will not be repeated here. In the above-mentioned embodiment, the deformation mechanism D45 having a pin structure 402 or a vacuum suction tube 404 is used to deform the first bonding area 102A-1 of the semiconductor wafer 102 into a weeping-shaped warp. However, the present disclosure is not limited thereto. For example, Fig.14 As shown, the deformation mechanism D45 includes both a pin structure 402 and a vacuum suction tube 404. In some embodiments, during the deformation process, one or more pin structures 402 are pushed onto the back side D40-BS of the chuck table D40, and the vacuum suction tube 404 also provides a vacuum suction force V1 to the back side D40-BS of the chuck table D40, so that the first bonding area 102A-1 of the semiconductor wafer 102 is deformed to have a first deformation amount 102DX. For example, in an exemplary embodiment, the pin structure 402 is pushed onto the central area of ​​the first bonding area 102A-1, and the vacuum suction force V1 is applied to the edge portion of the first bonding area 102A-1, so that the first bonding area 102A-1 of the semiconductor wafer 102 is deformed to form a weeping-type warpage. In an exemplary embodiment, since the first bonding area 102A-1 of the semiconductor wafer 102 is deformed during bonding to the first semiconductor chip 202-1, the die warpage is compensated and the problem of die bonding mismatch is solved.

[0074] Fig.15 is a schematic cross-sectional view of a stage in a method of bonding a first semiconductor chip to a semiconductor wafer according to some alternative embodiments of the present disclosure. Fig.15 The method shown is similar to Figure 8C Therefore, the same component symbols will be used to represent the same or similar parts, and will not be repeated here. In the aforementioned embodiment, the deformation mechanism D45 having a pin structure 402 or a vacuum suction tube 404 is used to deform the first bonding area 102A-1 of the semiconductor wafer 102 into a smile-shaped warp. However, the present disclosure is not limited thereto. For example, Fig.15 As shown, the deformation mechanism D45 includes both a pin structure 402 and a vacuum suction pipe 404. In some embodiments, during the deformation process, the pin structure 402 is pushed onto the back side D40-BS of the chuck table D40, and the vacuum suction pipe 404 also provides a vacuum suction force V1 to the back side D40-BS of the chuck table D40, so that the first bonding area 102A-1 of the semiconductor wafer 102 is deformed to have a first deformation amount 102DX. For example, in an exemplary embodiment, the pin structure 402 is pushed onto the edge portion of the first bonding area 102A-1, and the vacuum suction force V1 is applied to the central area of ​​the first bonding area 102A-1, so that the first bonding area 102A-1 of the semiconductor wafer 102 is deformed to form a smile-shaped warpage. In an exemplary embodiment, since the first bonding area 102A-1 of the semiconductor wafer 102 is deformed during bonding to the first semiconductor chip 202-1, the die warpage is compensated and the problem of die bonding mismatch is solved.

[0075] In the application of FIG. 6A to FIG. 15 After the different deformation and joining processes shown, Fig.16 In the subsequent step shown, the first semiconductor chip 202 - 1 is bonded to the semiconductor wafer 102 and released from the bonding head D30 , and at the same time, the deformation of the chuck stage D40 by the deformation mechanism D45 is released.

[0076] refer to Fig.17A and Fig. 17B In some embodiments, after the first semiconductor chip 202-1 is bonded to the first bonding region 102A-1 of the semiconductor wafer 102, the second semiconductor chip 202-2 may be bonded to the second bonding region 102A-2 of the semiconductor wafer 102 in a similar manner. For example, in some embodiments, the bonding head D30 of the bonding device DV is driven to a position above the support table D50 to pick up the second semiconductor chip 202-2 from the support table D50. The second semiconductor chip 202-2 may have a FIG. 3A to FIG. 3FThe second warping amount corresponds to the maximum height difference 202DX shown in any of the embodiments.

[0077] Next, the bonding head D30 is driven to move the second semiconductor chip 202-2 to a position above the second bonding region 102A-2 of the semiconductor wafer 102. Then, a bonding process for bonding the second semiconductor chip 202-2 to the second bonding region 102A-2 of the semiconductor wafer 102 may be performed. In some embodiments, before the bonding process, a second deformation process is performed using the deformation mechanism D45 of the bonding device DV to deform the chuck table D30 and deform the second bonding region 102A-2 of the semiconductor wafer 102 to have a second deformation amount, wherein the second deformation amount corresponds to the second warpage amount (maximum height difference 202DX).

[0078] In an exemplary embodiment, according to the warpage type of the second semiconductor chip 202 - 2 , a FIG. 6A to FIG. 15 The second bonding region 102A-2 of the semiconductor wafer 102 may be deformed and bonded to the second semiconductor chip 202-2 by any deformation process and bonding process shown. In other words, after the deformation process, the second wafer bonding position in the second bonding region 102A-2 of the semiconductor wafer 102 may protrude toward the second main bonding position of the second semiconductor chip 202-2. Furthermore, by bonding the second main bonding position of the second semiconductor chip 202-2 to the second wafer bonding position in the second bonding region 102A-2 of the semiconductor wafer 102, the second semiconductor chip 202-2 may be bonded to the second bonding region 102A-2 of the semiconductor wafer 102. The manner of bonding various semiconductor chips 202 to the semiconductor wafer 102 may be accomplished using a bonding manner similar to the above-described bonding manner of the first semiconductor chip 202-1 and the second semiconductor chip 202-2.

[0079] FIG. 18A to FIG. 18B are schematic cross-sectional views of various stages in a method of bonding semiconductor chips according to some exemplary embodiments of the present disclosure. FIG. 18A to FIG. 18B The method shown is similar to Figures 1 to 17B The method shown is similar, so the same original symbols are used to represent the same or similar parts, and will not be repeated here. In the aforementioned embodiment, the bonding of the semiconductor chip 202 to the semiconductor wafer 102 is performed by using a bonding head D30 to bond the semiconductor chips 202 one by one to the semiconductor wafer 102. However, the present disclosure is not limited thereto, wherein the bonding device DV may actually include a plurality of bonding heads D30.

[0080] For example, refer to Fig.18A and Fig.18BThe bonding device DV includes two bonding heads D30 mounted on a guide D20. In an exemplary embodiment, the two bonding heads D30 are driven to a position above a support table D50 to pick up a first semiconductor chip 202-1 and a second semiconductor chip 202-2 from the support table D50. The first semiconductor chip 202-1 and the second semiconductor chip 202-2 may have the same FIG. 3A to FIG. 3F The warping amount corresponding to the maximum height difference 202DX shown in any of the embodiments.

[0081] In an exemplary embodiment, according to the warpage type of the first semiconductor chip 202-1 and the second semiconductor chip 202-2, FIG. 6A to FIG. 15 The first bonding region 102A-2 and the second bonding region 102A-2 of the semiconductor wafer 102 may be deformed and bonded to the first semiconductor chip 202-1 and the second semiconductor chip 202-2 by any deformation process and bonding process shown. In other words, the first bonding region 102A-1 and the second bonding region 102A-2 of the semiconductor wafer 102 may be deformed in the same manner or in different manners based on the warpage of the first semiconductor chip 202-1 and the second semiconductor chip 202-2. For example, in one embodiment, the first semiconductor chip 202-1 has a smile-type warpage, and the second semiconductor chip 202-2 has a cry-type warpage. In this embodiment, the first bonding region 102A-1 is deformed to have a cry-type warpage to compensate for the smile-type warpage of the first semiconductor chip 202-1, and the second bonding region 102A-2 of the semiconductor wafer 102 is deformed to have a smile-type warpage to compensate for the cry-type warpage of the second semiconductor chip 202-2. After deforming the first bonding region 102A-1 and the second bonding region 102A-2 of the semiconductor wafer 102, the first semiconductor chip 202-1 and the second semiconductor chip 202-2 may be bonded to the first bonding region 102A-1 and the second bonding region 102A-2, respectively. In an exemplary embodiment, although the two bonding heads D30 are driven simultaneously to pick up and place the first semiconductor chip 202-1 and the second semiconductor chip 202-2 on the semiconductor wafer 102, it should be noted that the bonding heads D30 may also be driven separately in batches and driven to bond the first semiconductor chip 202-1 and the second semiconductor chip 202-2 to different regions on the semiconductor wafer 102, respectively.

[0082] According to the above-described embodiment, in a method of bonding a semiconductor chip, since a bonding area of ​​a semiconductor wafer is deformed during bonding of the semiconductor chip to a semiconductor wafer, warpage of the semiconductor chip (die) is compensated and mismatch of die bonding is reduced. The problem has been solved. Therefore, overlap offset in a pad caused by expansion will be minimized, thereby reducing concerns in a wafer acceptance test (WAT).

[0083] According to some embodiments of the present disclosure, a method for bonding semiconductor chips is described. The method includes the following steps. A semiconductor wafer is set on a chuck table of a bonding device. A bonding head of the bonding device is driven to pick up a first semiconductor chip from a support table, wherein the first semiconductor chip has a first warpage amount. The bonding head is driven to move the first semiconductor chip to a position above a first bonding area of ​​the semiconductor wafer. A deformation process is performed using a deformation mechanism of the bonding device to deform the chuck table and deform the first bonding area of ​​the semiconductor wafer to have a first deformation amount, wherein the first deformation amount corresponds to the first warpage amount. The first semiconductor chip is bonded to the first bonding area of ​​the semiconductor wafer while maintaining the first deformation amount of the semiconductor chip. The deformation of the chuck table by the deformation mechanism is released.

[0084] In some embodiments, the first semiconductor chip has a weeping-type warpage with a first warpage amount, and the edge portion of the first semiconductor chip is the main bonding position of the first semiconductor chip, and when performing the deformation process, the pin structure is pushed toward the back of the chuck table so that the wafer bonding position at the edge portion of the first bonding area of ​​the semiconductor wafer protrudes toward the main bonding position, and bonding the first semiconductor chip to the first bonding area of ​​the semiconductor wafer includes aligning and bonding the main bonding position of the first semiconductor chip to the wafer bonding position of the semiconductor wafer. In some embodiments, after bonding the first semiconductor chip to the first bonding area of ​​the semiconductor wafer, the method further includes: driving a bonding head of a bonding device to pick up a second semiconductor chip from the support table, wherein the second semiconductor chip has a second warpage amount; driving the bonding head to move the second semiconductor chip to a position above the second bonding area of ​​the semiconductor wafer; performing a second deformation process using a deformation mechanism of the bonding device to deform the chuck table and deform the second bonding area of ​​the semiconductor wafer to have a second deformation amount, wherein the second deformation amount corresponds to the second warpage amount; bonding the second semiconductor chip to the second bonding area of ​​the semiconductor wafer while maintaining the second deformation amount of the semiconductor wafer; and releasing the deformation of the chuck table by the deformation mechanism.

[0085] According to some other embodiments of the present disclosure, a method for bonding semiconductor chips is described. The method includes the following steps. A semiconductor wafer is placed on a chuck table, wherein the semiconductor wafer includes a first bonding area for a first semiconductor chip. A first warpage amount of the first semiconductor chip is measured to determine a main bonding position of the first semiconductor chip. A deformation process is performed on the chuck table and the semiconductor wafer, wherein after the deformation process, a wafer bonding position in the first bonding area of ​​the semiconductor wafer protrudes toward a main bonding position of the first semiconductor chip. The first semiconductor chip is bonded to the semiconductor wafer by bonding the main bonding position of the first semiconductor chip to the chip bonding position in the first bonding area of ​​the semiconductor wafer.

[0086] In some embodiments, the protrusion amount of the wafer bonding position in the first bonding area of ​​the semiconductor wafer corresponds to the first warpage amount of the first semiconductor chip. In some embodiments, the first semiconductor chip has a smile-shaped warpage of the first warpage amount, and the deformation process also includes pressing the pin structure on the central area of ​​the first bonding area of ​​the semiconductor wafer to produce a wafer bonding position protruding toward the main bonding position of the first semiconductor chip. In some embodiments, bonding the first semiconductor chip to the semiconductor wafer includes bonding a conductive terminal in the main bonding position of the first semiconductor chip to a conductive component in the wafer bonding position in the first bonding area of ​​the semiconductor wafer.

[0087] According to another embodiment of the present disclosure, a chip-on-wafer (CoW) bonding method is described. The method includes the following steps. A first semiconductor chip having a smile-type warpage or a weeping-type warpage is provided. A deformation process is performed on a semiconductor wafer, wherein when the first semiconductor chip has a smile-type warpage, a first bonding region of the semiconductor wafer is deformed to have a weeping-type warpage, and when the first semiconductor chip has a weeping-type warpage, the first bonding region is deformed to have a smile-type warpage. The first semiconductor chip is bonded to the first bonding region of the semiconductor wafer.

[0088] According to some other embodiments of the present disclosure, a bonding device is described, including a chuck table, a door-shaped frame, a bonding head, and a deformation mechanism. The chuck table is used to support a semiconductor wafer. The door-shaped frame is arranged on the chuck table. The bonding head is movably mounted on the door-shaped frame, wherein the bonding head is used to pick up a semiconductor chip from the support table and to move the semiconductor chip to the chuck table to be bonded to the semiconductor wafer. The deformation mechanism is located below the chuck table, wherein when the semiconductor chip is bonded to the semiconductor wafer, the deformation mechanism is configured to deform the chuck table together with the semiconductor wafer.

[0089] In some embodiments, the deformation mechanism includes at least one pin structure configured to push the back side of the chuck table so that the chuck table is deformed together with the semiconductor wafer. In some embodiments, the at least one pin structure includes a first pin structure and a second pin structure, and the first pin structure and the second pin structure are configured to have different heights during the deformation of the chuck table together with the semiconductor wafer. In some embodiments, the deformation mechanism includes a plurality of vacuum suction tubes for providing vacuum suction to the back side of the chuck table so that the chuck table is deformed together with the semiconductor wafer. In some embodiments, the plurality of vacuum suction tubes are configured to apply different vacuum suction to different areas on the back side of the chuck table. In some embodiments, the chuck table is a deformable chuck table, which includes a flexible organic material or a polymer material.

[0090] The foregoing summarizes the features of several embodiments so that those skilled in the art can better understand the various aspects of the present disclosure. Those skilled in the art will appreciate that they can easily use the present disclosure as a basis for designing or modifying other processes and structures to achieve the same purposes and / or achieve the same advantages as the embodiments described herein. Those skilled in the art will also appreciate that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they can make various changes, substitutions, and modifications without departing from the spirit and scope of the present disclosure.

Claims

1. A method for bonding a semiconductor chip, comprising: placing a semiconductor wafer on a chuck stage of a bonding device; driving a bonding head of the bonding device to pick up a first semiconductor chip from a support table, wherein the first semiconductor chip has a first warpage amount; driving the bonding head to move the first semiconductor chip to a position above a first bonding region of the semiconductor wafer; performing a deformation process using a deformation mechanism of the bonding device to deform the chuck stage and deform the first bonding region of the semiconductor wafer to have a first deformation amount, wherein the first deformation amount corresponds to the first warpage amount; bonding the first semiconductor chip to the first bonding region of the semiconductor wafer while maintaining the first deformation amount of the semiconductor wafer; as well as The deformation of the chuck table by the deformation mechanism is released. 2 . The method according to claim 1 , wherein the deformation mechanism comprises a pin structure, and the deformation process comprises pushing the pin structure onto a back side of the chuck table to deform the semiconductor wafer to have the first deformation amount.

3. The method according to claim 2, wherein: The first semiconductor chip has a smile-shaped warpage of the first warpage amount, and a position on a bonding surface of the first semiconductor chip having a maximum height difference relative to a boundary of the first semiconductor chip is a main bonding position of the first semiconductor chip, and when performing the deformation process, the pin structure is pushed toward the back side of the chuck table so that a wafer bonding position of the semiconductor wafer protrudes toward the main bonding position, and Bonding the first semiconductor chip to the first bonding area of ​​the semiconductor wafer includes aligning and bonding the primary bonding location of the first semiconductor chip to the wafer bonding location of the semiconductor wafer.

4. The method according to claim 1, wherein: The deformation mechanism includes a plurality of vacuum suction tubes, and the deformation process includes providing a vacuum suction force from the plurality of vacuum suction tubes to a back side of the chuck table to deform the semiconductor wafer to have the first deformation amount.

5. The method according to claim 4, wherein: The first semiconductor chip has a smile-shaped warpage of the first warpage amount, and a position on a bonding surface of the first semiconductor chip having a maximum height difference relative to a boundary of the first semiconductor chip is a main bonding position of the first semiconductor chip, and when the deformation process is performed, the plurality of vacuum suction tubes provide the vacuum suction force from the back side of the chuck table to the first bonding area of ​​the semiconductor wafer, and increase the applied vacuum suction force from the wafer bonding position in the first bonding area to a position other than the wafer bonding position in the first bonding area, and Bonding the first semiconductor chip to the first bonding area of ​​the semiconductor wafer includes aligning and bonding the primary bonding location of the first semiconductor chip to the wafer bonding location of the semiconductor wafer.

6. A method for bonding a semiconductor chip, comprising: placing a semiconductor wafer on a chuck table, wherein the semiconductor wafer includes a first bonding region for bonding with a first semiconductor chip; measuring a first warpage amount of the first semiconductor chip to determine a main bonding position of the first semiconductor chip; performing a deformation process on the chuck table and the semiconductor wafer, wherein after the deformation process, a wafer bonding position in the first bonding area of ​​the semiconductor wafer protrudes toward the main bonding position of the first semiconductor chip; as well as The first semiconductor chip is bonded to the semiconductor wafer by bonding the main bonding locations of the first semiconductor chip to the wafer bonding locations in the first bonding region of the semiconductor wafer.

7. The method according to claim 6, wherein: The deformation process includes pushing a pin structure onto a back side of the chuck table so that the wafer bonding position in the first bonding area of ​​the semiconductor wafer is protruded by a pressure of pushing the pin structure.

8. The method according to claim 6, wherein: The deformation process includes using a plurality of vacuum suction tubes to provide different vacuum suction forces to the back side of the chuck table, so that the applied vacuum suction force increases from the wafer bonding position in the first bonding area to a position other than the wafer bonding position in the first bonding area.

9. The method according to claim 6, wherein the semiconductor wafer comprises a second bonding region for bonding with a second semiconductor chip, and the method further comprises: measuring a second warpage amount of the second semiconductor chip to determine a second main bonding position of the second semiconductor chip; performing the deformation process on the chuck table and the semiconductor wafer, wherein after the deformation process, the wafer bonding position in the first bonding region of the semiconductor wafer protrudes toward the main bonding position of the first semiconductor chip, and a second wafer bonding position in the second bonding region of the semiconductor wafer protrudes toward the second main bonding position of the second semiconductor chip; as well as The first semiconductor chip is bonded to the first bonding region of the semiconductor wafer, and simultaneously the second semiconductor chip is bonded to the second bonding region of the semiconductor wafer.

10. A bonding device comprising: a chuck table for supporting a semiconductor wafer; A door-shaped frame, arranged on the chuck table; a bonding head movably mounted on the portal frame, wherein the bonding head is used to pick up a semiconductor chip from a support table and to move the semiconductor chip toward the chuck table to be bonded to the semiconductor wafer; as well as The deformation mechanism is located below the chuck stage, wherein when the semiconductor chip is bonded to the semiconductor wafer, the deformation mechanism is configured to deform the chuck stage together with the semiconductor wafer.

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