Semiconductor chamber

Abstract

The invention discloses a semiconductor cavity, and relates to the field of semiconductors. A semiconductor cavity comprises a cavity body, a bearing device, a lining device, a first coil assembly and a heating device. The bearing device, the lining device and the heating device are all arranged in the cavity; the first coil assembly is used for generating plasma in the cavity; the lining device is arranged on the periphery of the bearing device in a surrounding mode and connected with the inner wall of the cavity, and the heating device is arranged on the lining device and opposite to the bearing face of the bearing device. The application at least can solve the problem that the current chamber is only suitable for a single process.

Description

Technical Field

[0001] The present application belongs to the field of semiconductors, and specifically relates to a semiconductor chamber. Background Art

[0002] Physical Vapor Deposition (PVD) refers to a technology that uses physical methods to ionize materials into ions under vacuum conditions and deposits a layer of thin film with special properties on a wafer through a gas phase process.

[0003] In order to ensure the formation of a good metal film on the wafer, degassing and pre-cleaning processes are required before the PVD process. The PVD process flow is as follows: Figure 1 As shown, for this purpose, a degassing chamber and a pre-cleaning chamber are derived in the PVD complete equipment. Among them, the degassing chamber mainly heats the wafer to a certain temperature by lighting the halogen lamp and starting the heating element, which can effectively remove the gas adhering to the surface of the wafer. The halogen lamp heats the wafer by thermal radiation, and the heating element directly heats the wafer. The pre-cleaning chamber removes impurities or oxide layers remaining on the surface of the wafer in the previous process by plasma etching or hydrogen reduction, providing a clean contact surface for subsequent processes, ensuring the reliability of subsequent processes and product yield.

[0004] However, some current process chambers are only suitable for one process, such as only for the degassing process, or only for the pre-cleaning process. Therefore, when carrying out the entire process, both a degassing chamber and a pre-cleaning chamber are required, and they occupy two workstations of the whole machine. In addition, when switching between the pre-cleaning process and the degassing process, the wafer needs to be transferred back and forth, which limits the production capacity of the PVD equipment to a certain extent. Summary of the invention

[0005] The purpose of the embodiments of the present application is to provide a semiconductor chamber that can at least solve the problem that the current chamber is only suitable for a single process.

[0006] In order to solve the above technical problems, this application is implemented as follows:

[0007] The embodiment of the present application provides a semiconductor chamber, which includes a chamber body, a carrying device, a lining device, a first coil assembly and a heating device;

[0008] The carrying device, the lining device and the heating device are all arranged in the cavity;

[0009] The first coil assembly is used to generate plasma in the cavity;

[0010] The lining device is arranged around the carrying device and connected to the inner wall of the cavity. The heating device is arranged on the lining device and is arranged opposite to the carrying surface of the carrying device.

[0011] In the embodiment of the present application, plasma can be generated in the cavity by the first coil assembly, and the plasma can react on the surface of the wafer carried by the carrier device to achieve the purpose of cleaning, thereby removing impurities or oxide layers on the surface of the wafer; the wafer carried by the carrier device can be heated by the heating device, so as to remove the gas adhering to the surface of the wafer by heating, so as to achieve the purpose of degassing. Based on the above settings, the embodiment of the present application uses the same semiconductor chamber, which can perform both a cleaning process and a degassing process on the wafer, ensuring that the surface of the wafer is clean and free of gas adhesion, thereby laying the foundation for subsequent processes to ensure the reliability and product yield of subsequent processes. Compared with the method of using a dedicated process chamber to perform a cleaning process or a degassing process alone in the related art, the semiconductor chamber in the embodiment of the present application can be used for a cleaning process and a degassing process, thereby effectively alleviating the problems of the cleaning process and the degassing process being separately set up in a semiconductor chamber, resulting in the complexity of the whole equipment and the large space occupied. At the same time, it can also effectively avoid the transmission of wafers back and forth between the cleaning process and the degassing process, thereby saving process time and improving the production capacity of the whole equipment. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 is a schematic diagram of a PVD process flow in the related art;

[0013] Figure 2 A schematic diagram of the structure of a semiconductor chamber disclosed in an embodiment of the present application;

[0014] Figure 3 It is a schematic diagram of the structures of the lining device, the heating device, the second coil assembly, etc. disclosed in the embodiment of the present application;

[0015] Figure 4 It is a cross-sectional schematic diagram of structures such as the lining device, the heating device, and the second coil assembly disclosed in the embodiment of the present application.

[0016] Description of reference numerals:

[0017] 100- cavity; 110- coupling top; 120- bottom shell;

[0018] 200-carrying device;

[0019] 300-lining device;

[0020] 310 - insulating bearing member; 311 - groove; 312 - first lead outlet; 313 - second lead outlet; 314 - lead inlet;

[0021] 320-insulating connector;

[0022] 330 - lining member; 331 - accommodating cavity; 332 - first notch; 333 - second notch;

[0023] 341-first insulating cover plate; 342-second insulating cover plate;

[0024] 400-wiring assembly; 410-first wiring block; 420-second wiring block;

[0025] 500-installation assembly; 510-first fixing block; 520-second fixing block;

[0026] 610-first coil assembly; 620-second coil assembly;

[0027] 700-heating device; 710-baking element; 711-first baking lamp; 7111-first semicircular lamp segment; 7112-first linear lamp segment; 7113-second linear lamp segment; 712-second baking lamp; 7121-second semicircular lamp segment; 7122-third linear lamp segment; 7123-fourth linear lamp segment;

[0028] 810-RF power supply; 820-RF matching device;

[0029] 900-air intake device;

[0030] 1000-bias voltage adjustment device;

[0031] 1100 - Vacuum pump. DETAILED DESCRIPTION

[0032] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0033] The terms "first", "second", etc. in the specification and claims of the present application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described here, and the objects distinguished by "first", "second", etc. are generally of one type, and the number of objects is not limited. For example, the first object can be one or more. In addition, "and / or" in the specification and claims represents at least one of the connected objects, and the character " / " generally indicates that the objects associated with each other are in an "or" relationship.

[0034] The embodiments of the present application are described in detail below through specific embodiments and their application scenarios in conjunction with the accompanying drawings.

[0035] refer to Figures 2 to 4 The present application embodiment discloses a semiconductor chamber, which can be applied to a cleaning process, or a degassing process, or a cleaning process and a degassing process at the same time, so that the semiconductor chamber has multiple application modes, which can be selected according to actual needs. The disclosed semiconductor chamber includes a cavity 100, a carrier device 200, a liner device 300, a first coil assembly 610 and a heating device 700.

[0036] In addition to the above structures, Figure 2 As shown, the semiconductor chamber may further include a radio frequency power supply 810, a radio frequency matcher 820, an air inlet device 900, a bias voltage adjustment device 1000 and a vacuum pump 1100. The radio frequency power supply 810 may load radio frequency power to the first coil assembly 610 through the radio frequency matcher 820 to form plasma; the air inlet device 900 is used to introduce process gas into the inner cavity of the semiconductor chamber to ionize the process gas; the bias voltage adjustment device 1000 is used to adjust the wafer to a positive bias voltage or a negative bias voltage to control the filtering efficiency of the corresponding ions; and the vacuum pump 1100 is used to evacuate the inner cavity of the semiconductor chamber to ensure that the inner cavity has a certain degree of vacuum.

[0037] The cavity 100 is a basic installation component, which can provide a housing and installation basis for components such as the carrier 200 , the lining device 300 , the first coil assembly 610 , and the heating device 700 . In some embodiments, the carrier 200 , the lining device 300 , and the heating device 700 are all disposed in the cavity 100 .

[0038] For example, the chamber 100 may include a bottom shell 120 and a coupling top 110, wherein the coupling top 110 is disposed on the top of the bottom shell 120 and forms a receiving space with the bottom shell 120, and the carrier 200, the lining device 300 and the heating device 700 are all disposed in the receiving space. A process space may be enclosed between the coupling top 110 and the lining device 300 to facilitate the process.

[0039] In addition, the top of the bottom shell 120 may be provided with a first adapting structure, and the bottom of the coupling top 110 may be provided with a second adapting structure. When the bottom shell 120 and the coupling top 110 are installed, the coupling top 110 may be installed on the top of the bottom shell 120 through the adapting connection between the first adapting structure and the second adapting structure to ensure the airtightness of the accommodation space. The first adapting structure and the second adapting structure may be adapted to be connected by clamping, screwing, welding, riveting, bonding, etc.

[0040] The carrying device 200 is used to carry the wafer. The carrying device 200 may include a base, and the surface of the base is a carrying surface. During the process, the carrying surface carries the wafer to ensure the stability of the wafer.

[0041] The lining device 300 may be located between the carrier device 200 and the side wall of the chamber 100 to prevent the plasma near the carrier device 200 from directly contacting the side wall of the chamber 100 and causing damage or contamination to the side wall of the chamber 100, thereby achieving a protective effect on the side wall of the chamber 100. In some embodiments, the lining device 300 is disposed around the carrier device 200 and connected to the inner wall of the chamber 100, so that the edge of the carrier device 200 can be completely separated from the side wall of the chamber 100, thereby effectively preventing the plasma flowing to the carrier device 200 from directly contacting the side wall of the chamber 100.

[0042] In addition, the carrying device 200 may also be close to the bottom end of the lining device 300. Of course, the lining device 300 may also be located at other positions of the carrying device 200, which is not specifically limited here.

[0043] Exemplarily, the lining device 300 as a whole can be a tubular structure, such as a circular cylindrical structure, a polygonal tubular structure, etc., and the specific shape is not limited as long as it can shield the supporting device 200.

[0044] The first coil assembly 610 is used to generate plasma in the cavity 100. The first coil assembly 610 can be connected to the RF matcher 820, and the RF matcher 820 is connected to the RF power supply 810. In this way, during the process, the RF power supply 810 loads the RF power to the first coil assembly 610 through the RF matcher 820, and the first coil assembly 610 can generate an electromagnetic field in the cavity 100. Under the action of the electromagnetic field, the process gas introduced into the cavity 100 is ionized, thereby generating plasma in the cavity 100 in an inductively coupled plasma (ICP) mode, so that the plasma can react on the surface of the wafer to achieve a cleaning process. Exemplarily, the first coil assembly 610 can include a plurality of connected coil units to increase the winding area, which is conducive to promoting the generation of plasma.

[0045] Considering that the coupling top 110 is located in the upper area of ​​the chamber 100 , the first coil assembly 610 can be wound around the outer side of the coupling top 110 to generate an electromagnetic field around the coupling top 110 , thereby ionizing the process gas in the process space.

[0046] In the embodiment of the present application, the process gas may be Ar or H2 or He. In addition, the first coil component 610 may be a copper coil, and of course, may also be other materials, which are not specifically limited here.

[0047] The heating device 700 is used to heat the wafer carried by the carrier device 200 so that the wafer reaches a preset temperature, thereby eliminating the gas adhering to the surface of the wafer to achieve the purpose of degassing. In some embodiments, the heating device 700 is arranged in the lining device 300 and is arranged opposite to the bearing surface of the carrier device 200 for carrying the wafer. In this way, the fixed installation of the heating device 700 can be achieved through the lining device 300 to ensure the stability of the heating device 700. At the same time, since the carrier device 200 is located inside the lining device 300, the heating device 700 can be opposite to the carrier device 200, so that the wafer carried by the carrier device 200 can be heated by the heating device 700, thereby effectively removing the gas adhering to the surface of the wafer. Exemplarily, the heating method of the heating device 700 for heating the wafer can be thermal radiation. Of course, other methods can also be used, which can be set according to actual working conditions.

[0048] In the embodiment of the present application, plasma can be generated in the cavity 100 by the first coil assembly 610, and the plasma can react on the surface of the wafer carried by the carrying device 200 to achieve the purpose of cleaning, thereby removing impurities or oxide layers on the surface of the wafer; the wafer carried by the carrying device 200 can be heated by the heating device 700, so as to remove the gas adhering to the surface of the wafer by heating, so as to achieve the purpose of degassing.

[0049] Based on the above settings, the embodiment of the present application uses the same semiconductor chamber to perform both a cleaning process and a degassing process on the wafer, ensuring that the surface of the wafer is clean and free of gas adhesion, thereby laying the foundation for subsequent processes to ensure the reliability of subsequent processes and product yield.

[0050] Compared with the method in the related art that a dedicated process chamber is used to perform a cleaning process or a degassing process separately, the semiconductor chamber in the embodiment of the present application can be used to perform a cleaning process and a degassing process, thereby effectively alleviating the problems of separately setting up semiconductor chambers for the cleaning process and the degassing process, which leads to the complexity of the whole equipment and the large space occupied. At the same time, it can also effectively avoid the transfer of wafers back and forth between the cleaning process and the degassing process, reduce the number of wafer transfers, thereby saving process time and improving the production capacity of the whole equipment.

[0051] refer to Figures 2 to 4In some embodiments, the semiconductor chamber may further include a second coil assembly 620 disposed in the cavity 100, and the second coil assembly 620 is disposed outside the lining device 300, and is used to heat the wafer carried by the carrying device 200. Based on this, when the second coil assembly 620 is powered on, it can generate heat around the lining device 300, and the heat gradually diffuses into the lining device 300. On the one hand, it can reduce the heat loss inside the lining device 300, thereby improving the uniformity of heating of the wafer in the lining device 300. On the other hand, after the second coil assembly 620 is powered on, a magnetic field can be formed inside the lining device 300. The magnetic field is approximately parallel to the axis of the second coil assembly 620. Through the action of the magnetic field, charged particles with a large angle with the magnetic flux lines can be filtered out to a certain extent, thereby improving the uniformity of wafer surface treatment (such as etching or reduction, etc.). Exemplarily, the second coil assembly 620 may include a plurality of connected coil units to increase the winding area, which is conducive to improving the heating efficiency.

[0052] The second coil assembly 620 is supplied with direct current. According to Joule's law, Q=I 2 Rt can be used to calculate the heat generated by the second coil assembly 620, where I is current, R is resistance, and t is time.

[0053] In addition, the current can be adjusted by changing the number of coils of the second coil assembly 620 to meet the heating requirements under different working conditions.

[0054] It should be noted here that the second coil assembly 620 can cooperate with the heating device 700 to transfer heat to the wafer carried by the carrying device 200 to ensure that each area of ​​the wafer can evenly reach the preset temperature, thereby achieving the effect of degassing each area of ​​the wafer.

[0055] Of course, the carrier 200 itself may also have a heating function to directly heat the wafer. In some embodiments, the carrier 200 may be provided with a heating element, under the action of the heating element, the surface temperature of the carrier 200 rises to a certain temperature, so as to directly heat the wafer. Exemplarily, the interior of the carrier 200 may be provided with a heating element such as a heating tube or a heating wire to heat the carrier surface.

[0056] Based on the above configuration, the heating device 700, the second coil assembly 620 and the heating element can cooperate with each other to achieve heating and insulation of the wafer carried by the carrying device 200, thereby ensuring that the wafer can reach a preset temperature and ensuring the uniformity of the temperature of each area of ​​the wafer, thereby achieving a degassing effect on each area of ​​the wafer surface.

[0057] refer to Figure 3 and Figure 4In some embodiments, the lining device 300 may include a lining member 330, which is connected to the inner wall of the cavity 100 to ensure the installation stability and firmness of the lining member 330 through the cavity 100. For example, the lining member 330 may be connected to the first adapter structure at the top of the cavity 100, and of course, it may also be connected to other positions, which is not specifically limited here.

[0058] The lining member 330 has a receiving cavity 331, and the carrier 200 is located in the receiving cavity 331. Thus, the carrier 200 can be surrounded by the lining member 330 so that the edge of the carrier 200 is separated from the inner wall of the chamber 100, thereby effectively preventing the plasma from directly contacting the side wall of the chamber 100 and causing damage or contamination to the side wall of the chamber 100. Exemplarily, the carrier 200 can include a disc-shaped base, and accordingly, the lining member 330 can be a cylindrical member so as to be adapted to the shape of the base.

[0059] The second coil assembly 620 is wound around the outer side of the lining member 330. Thus, after the second coil assembly 620 is energized, a magnetic field extending approximately along the axial direction of the lining member 330 can be generated on the inner side of the lining member 330, so that under the action of the magnetic field, a portion of charged particles having a large angle with the magnetic flux lines can be filtered out. At the same time, since the second coil assembly 620 has resistance, when energized, the resistance will generate heat, thereby generating heat around the lining member 330, so as to alleviate the situation where the heat inside the lining member 330 is dissipated outwardly, thereby ensuring the temperature inside the lining member 330.

[0060] In some cases, the lining member 330 is made of metal. Of course, other materials such as non-metallic materials may also be used, which is not specifically limited here.

[0061] In some embodiments, the lining member 330 may include a sleeve structure and an edge structure, wherein the sleeve structure is disposed around the carrier 200, the edge structure is disposed around one end of the sleeve structure and extends toward the outside of the sleeve structure, and the edge structure is fixedly connected to the inner wall of the cavity 100, so that the edge structure can ensure the firmness of the connection between the lining member 330 and the cavity 100, and the sleeve structure can separate the carrier 200 from the inner wall of the cavity 100 to prevent the inner wall of the cavity 100 from being contaminated or damaged. Exemplarily, the sleeve structure may be a cylindrical sleeve, a truncated cone sleeve, etc., and the edge structure may be a circular ring disk.

[0062] Considering that in some cases, the lining member 330 may be made of metal, in this case, to prevent electrical connection, the lining device 300 may further include an insulating bearing member 310, such as Figure 4As shown, the insulating bearing member 310 is connected to the lining member 330, and the heating device 700 is located in the accommodating cavity 331 and is connected to the insulating bearing member 310. Based on this arrangement, the heating device 700 can be connected to the lining member 330 through the insulating bearing member 310, and the insulation between the heating device 700 and the lining member 330 can also be achieved to prevent the current flowing into the heating device 700 from reaching the lining member 330 and causing electrical connection.

[0063] In other embodiments, the lining member 330 may also be made of non-metallic material, such as ceramic material, etc. In this case, the heating device 700 may be directly connected to the lining member 330, which can not only fix the heating device 700 but also prevent electrical connection.

[0064] In some embodiments, a step structure may be provided on the inner side of the lining member 330, and the step structure includes a horizontal plane and a vertical plane arranged vertically, wherein the horizontal plane may be provided with a notch (i.e., a first notch 332, a second notch 333, etc.), and the insulating carrier 310 is embedded in the notch to realize the assembly of the insulating carrier 310.

[0065] Exemplarily, the insulating bearing member 310 may be provided with an inserting portion, and when the insulating bearing member 310 is embedded in the notch, the inserting portion is pressed against the vertical surface of the step structure to ensure that the insulating bearing member 310 is not easily separated from the lining member 330. In addition, the insulating bearing member 310 may be provided with one or more, and correspondingly, the notch may be provided with one or more. In a more specific embodiment, the insulating bearing member 310 may be two, and correspondingly, a first notch 332 and a second notch 333 may be provided to respectively cooperate with the installation.

[0066] Continue to refer Figure 4 The semiconductor chamber may further include a wiring assembly 400, which includes a first wiring block 410 and a second wiring block 420. The positive electrode of the heating device 700 is connected to the first wiring block 410, and the negative electrode of the heating device 700 is connected to the second wiring block 420. In this way, electric energy can be transmitted to the heating device 700 through the first wiring block 410 and the second wiring block 420.

[0067] To achieve fixation, the first wiring block 410 and the second wiring block 420 are both connected to the lining member 330; alternatively, the lining device 300 may include two insulating bearing members 310, and the first wiring block 410 and the second wiring block 420 may also be connected to the two insulating bearing members 310, respectively. It should be noted here that when the lining member 330 is made of metal, the first wiring block 410 and the second wiring block 420 are respectively connected to the two insulating bearing members 310 to prevent electrical connection; when the lining member 330 is made of non-metallic material, such as ceramic material, the first wiring block 410 and the second wiring block 420 may both be connected to the lining member 330.

[0068] In an embodiment of the present application, the semiconductor chamber may further include an installation assembly 500, which includes a first fixed block 510 and a second fixed block 520, and the first fixed block 510 and the second fixed block 520 are respectively arranged on two insulating carriers 310, and the first wiring block 410 is connected to the first fixed block 510, and the second wiring block 420 is connected to the second fixed block 520.

[0069] Based on the above arrangement, the first wiring block 410 can be fixed by the first fixing block 510, and the second wiring block 420 can be fixed by the second fixing block 520, so that the heating device 700 can be fixedly installed and the firmness and stability of the installation can be ensured.

[0070] Exemplarily, each insulating carrier 310 can be provided with a groove 311, and the first fixed block 510 and the second fixed block 520 are respectively arranged in the corresponding groove 311. At the same time, the first wiring block 410 and the second wiring block 420 are also arranged in the corresponding groove 311, and the first wiring block 410 can be fastened and connected to the first fixed block 510 by fasteners, and the second wiring block 420 can be fastened and connected to the second fixed block 520. In this way, the side walls of the groove 311 can respectively limit the first wiring block 410 and the second wiring block 420, and the fastening effect of the fastener can also ensure the fastening connection between the first wiring block 410 and the second wiring block 420, so as to ensure the firmness and stability of the installation of the heating device 700 and realize the power supply of the heating device 700.

[0071] Further, refer to Figure 3The side walls of the two insulating bearings 310 may be provided with a first lead outlet 312 and a lead inlet 314, wherein one of the first lead outlet 312 and the lead inlet 314 is used to insert the positive electrode current wire, and the other is used to insert the negative electrode current wire, and the first fixing block 510 is used to connect with the positive electrode current wire, and the second fixing block 520 is used to connect with the negative electrode current wire. Based on this configuration, the positive electrode current wire and the negative electrode current wire can be avoided by configuring the first lead outlet 312 and the lead inlet 314, so that the first wiring block 410 and the second wiring block 420 of the heating device 700 can be connected to the external positive electrode current wire and the negative electrode current wire, respectively, so as to provide power to the heating device 700.

[0072] In other embodiments, the side walls of the same insulating carrier 310 may be respectively provided with a lead-in wire entrance 314 and a second lead-out wire entrance 313. Through the cooperation between the second lead-out wire entrance 313 and the lead-in wire entrance 314, the external positive power-on wire and the negative power-on wire may be respectively connected to the positive and negative poles of the second coil assembly 620, so as to supply power to the second coil assembly 620.

[0073] In order to realize the installation of the insulating bearing member 310, the end surface of the lining member 330 may be provided with a first notch 332 and a second notch 333. Figure 3 As shown, one of the insulating bearing members 310 is arranged in the first notch 332, and the other insulating bearing member 310 is arranged in the second notch 333. In this way, the installation of the two insulating bearing members 310 can be achieved through the setting of the first notch 332 and the second notch 333; in addition, the two ends of the heating device 700 can also be avoided to prevent assembly interference.

[0074] In order to protect the connection point of the heating device 700, the lining device 300 may also include a first insulating cover plate 341 and a second insulating cover plate 342, wherein the first insulating cover plate 341 is covered on the first notch 332, and the second insulating cover plate 342 is covered on the second notch 333. Based on this arrangement, the first insulating cover plate 341 can be used to shield the first wiring block 410, the first fixing block 510 and one of the insulating bearing members 310, thereby effectively preventing plasma from entering the first notch 332 and causing damage or pollution to the various structural members in the first notch 332. Similarly, the second insulating cover plate 342 shields the second wiring block 420, the second fixing block 520 and another insulating bearing member 310, thereby effectively preventing plasma from entering the second notch 333 and causing damage or pollution to the various structural members in the second notch 333.

[0075] Exemplarily, the first insulating cover plate 341 and the second insulating cover plate 342 may be mounted to the lining member 330 by fasteners for easy assembly and disassembly.

[0076] To fix the second coil assembly 620, the lining device 300 may further include an insulating connector 320, such as Figure 3 As shown, the insulating connector 320 is connected to the insulating bearing member 310, and the second coil assembly 620 is fixed to the insulating connector 320. Based on this arrangement, on the one hand, the second coil assembly 620 can be fixed to ensure the stability of the second coil assembly 620, and on the other hand, the insulation between the second coil assembly 620 can be achieved to prevent the occurrence of electrical connection.

[0077] In some embodiments, the heating device 700 may include a baking element 710, such as a baking lamp, etc., and the wafer is heated by the baking element 710 in a heat radiation manner. In order to improve the heating uniformity, the heating device 700 may include a plurality of circles of baking elements 710, which are arranged at intervals from the center to the edge of the semiconductor chamber and are respectively opposite to the surface of the carrier 200. In this way, the heating area can be increased by the plurality of circles of baking elements 710, and the area opposite to the wafer can be increased, so that the heating rate can be improved on the one hand, and the uniformity of heating of each area of ​​the wafer from the center to the edge area can be improved on the other hand, so as to ensure the degassing effect of each area.

[0078] Exemplarily, the outer side of the baking element 710 can be made of the same material as the coupling top 110, such as, the outer side of the baking element 710 and the coupling top 110 are both made of quartz material. This quartz material can effectively prevent damage caused by plasma and almost no particles are generated, thereby not affecting the process results and meeting the process's restriction requirements on particles.

[0079] refer to Figure 3 In some embodiments, each circle of baking elements 710 may include a first baking lamp 711 and a second baking lamp 712, wherein the first baking lamp 711 includes a first semicircular lamp segment 7111, a first linear lamp segment 7112, and a second linear lamp segment 7113, and the first linear lamp segment 7112 and the second linear lamp segment 7113 are respectively connected to the two ends of the first semicircular lamp segment 7111, and the first wiring block 410 is connected to the first linear lamp segment 7112, and the second wiring block 420 is connected to the second linear lamp segment 7113. Based on this, the distribution area of ​​the first baking lamp 711 in the middle area can be guaranteed, and the first baking lamp 711 can be easily installed on the lining device 300.

[0080] Similarly, the second baking lamp 712 may include a second semicircular lamp segment 7121, a third linear lamp segment 7122, and a fourth linear lamp segment 7123, and the third linear lamp segment 7122 and the fourth linear lamp segment 7123 are respectively connected to the two ends of the second semicircular lamp segment 7121, and the first wiring block 410 is connected to the third linear lamp segment 7122, and the second wiring block 420 is connected to the fourth linear lamp segment 7123. Based on this, the distribution area of ​​the second baking lamp 712 in the middle area can be guaranteed, and the second baking lamp 712 can be easily installed on the lining device 300.

[0081] Furthermore, the concave sides of the first semicircular lamp segment 7111 and the second semicircular lamp segment 7121 are interlocked with each other, the first straight lamp segment 7112 and the third straight lamp segment 7122 are arranged in parallel, and the second straight lamp segment 7113 and the fourth straight lamp segment 7123 are arranged in parallel. In this way, the area relative to the wafer of each circle of baking elements 710 can be increased to a certain extent, thereby improving baking efficiency and baking uniformity.

[0082] Based on the setting of the baking element 710 of the above-mentioned shape, the cross-sectional area occupied by the baking element 710 in the lining device 300 can be reduced, thereby reducing the obstruction to the plasma and ensuring that enough plasma can pass through. At the same time, it can also ensure that the baking element 710 can cover the entire wafer surface, thereby achieving uniform heating of various areas of the wafer surface.

[0083] In some embodiments, the ratio of the total projected area of ​​the multi-ring baking element 710 along the first direction to the area of ​​the cross section of the inner cavity of the lining device 300 does not exceed a preset ratio, wherein the first direction is perpendicular to the cross section. For example, the preset ratio may be 30%, and of course, may be other values, which are not specifically limited here.

[0084] Based on the above arrangement, by making the cross-sectional area occupied by the overall equivalent area of ​​the heating device 700 in the lining device 300 less than or equal to 30% of the overall cross-sectional area of ​​the inner cavity of the lining device 300, this design can reduce the obstruction of the heating device 700 to the plasma to a certain extent, thereby ensuring that the plasma can pass smoothly.

[0085] Based on the above-mentioned semiconductor chamber, an embodiment of the present application further discloses a semiconductor process equipment, and the disclosed semiconductor process equipment includes the above-mentioned semiconductor chamber.

[0086] In the embodiment of the present application, the specific process of installing the heating device 700 and the second coil assembly 620 to the lining device 300 is as follows:

[0087] The first fixing block 510 and the second fixing block 520 are respectively installed in the grooves 311 of the two corresponding insulating bearing members 310;

[0088] Install the two insulating bearing members 310 into the first notch 332 and the second notch 333 of the lining member 330 respectively;

[0089] Place the multi-turn baking element 710 into the accommodating cavity 331 of the lining member 330, connect the positive electrode of the multi-turn baking element 710 to the first fixing block 510 with the first wiring block 410, and connect the negative electrode of the multi-turn baking element 710 to the second fixing block 520 with the second wiring block 420;

[0090] Install the first insulating cover plate 341 and the second insulating cover plate 342 respectively;

[0091] The positive electrode current conducting wire connected to the first wiring block 410 is inserted through the lead wire inlet 314, and the negative electrode current conducting wire connected to the second wiring block 420 is inserted through the first lead wire outlet 312;

[0092] The second coil assembly 620 is wound around the outer side of the lining member 330 and fixed to the insulating connector 320 , and the insulating connector 320 is connected to one of the insulating carriers 310 ;

[0093] The positive electrode conducting line connected to the second coil assembly 620 is inserted through the lead wire inlet 314 , and the negative electrode conducting line connected to the second coil assembly 620 is inserted through the second lead wire outlet 313 .

[0094] The working process of the semiconductor chamber in the embodiment of the present application is as follows:

[0095] The robot transfers the wafer into the chamber 100 and places it on the surface of the carrier 200;

[0096] The heating device 700 is turned on, and Ar gas is introduced into the chamber 100, the heating element of the carrier 200 is turned on, and the second coil assembly 620 is energized, so that the temperature of the wafer is increased under the joint action of the heating device 700, the heating element and the second coil assembly 620, so as to achieve degassing treatment;

[0097] The heating element is turned off, and the vacuum pump 1100 is started to evacuate the process space to a preset pressure;

[0098] Filled with Ar (or H2 or He), the RF power supply 810 loads RF power to the first coil assembly 610 through the RF matcher 820, and generates plasma in the coupling top 110 in ICP mode to etch or reduce the wafer through plasma to achieve wafer cleaning.

[0099] It should be noted here that the process gas can be Ar, H2 or He, etc.

[0100] When the process gas is Ar, the bias voltage adjustment device 1000 is adjusted to the negative pressure zone, the wafer bias voltage is negative, and Ar + Bombard the wafer surface to achieve the etching effect and complete the pre-cleaning process. In this area, the etching rate can be adjusted by adjusting the size of the negative bias voltage.

[0101] When the process gas is H2 or He, the bias voltage adjustment device 1000 is adjusted to the positive pressure zone. At this time, the wafer bias voltage is positive, which repels H2. + ions, but for neutral radicals H * There is no effect, therefore, it plays the role of filtering ions, and the free radicals can fall on the wafer surface and react with the wafer to achieve a cleaning effect while reducing ion damage. In this area, the positive bias voltage of the bias adjustment device 1000 can be adjusted to control H + The filtration efficiency of ions is improved, and the positive bias mode is used to exclude H + ion method, compared with mechanical filtering H + The ion method is less likely to produce particle pollution.

[0102] To sum up, the semiconductor chamber in the embodiment of the present application can be compatible with the degassing function and the cleaning function, saving 1-2 workstations for the whole equipment, and the increase in the workstations of the whole equipment can improve the production capacity; in addition, it can also reduce the transmission time of the wafer between the degassing chamber and the cleaning chamber, thereby saving process time and improving process efficiency.

[0103] The embodiments of the present application are described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of the present application, ordinary technicians in this field can also make many forms without departing from the purpose of the present application and the scope of protection of the claims, all of which are within the protection of the present application.

Claims

1. A semiconductor chamber, characterized in that: include: A cavity (100), a carrying device (200), a lining device (300), a first coil assembly (610), and a heating device (700); The carrying device (200), the lining device (300) and the heating device (700) are all arranged in the cavity (100); The first coil assembly (610) is used to generate plasma in the cavity (100); The lining device (300) is arranged around the supporting device (200) and is connected to the inner wall of the cavity (100); the heating device (700) is arranged on the lining device (300) and is arranged opposite to the supporting surface of the supporting device (200).

2. The semiconductor chamber according to claim 1, characterized in that The lining device (300) comprises a lining member (330) connected to the inner wall of the cavity (100), the lining member (330) having a receiving cavity (331), and the carrying device (200) is located in the receiving cavity (331); The semiconductor chamber further comprises a second coil component (620) disposed in the cavity (100), wherein the second coil component (620) is wound around the outer side of the lining member (330).

3. The semiconductor chamber according to claim 2, characterized in that: The lining device (300) further comprises an insulating bearing member (310) connected to the lining member (330); the heating device (700) is located in the accommodating cavity (331) and is connected to the insulating bearing member (310).

4. The semiconductor chamber according to claim 3, characterized in that: The lining device (300) comprises two insulating bearing members (310); The semiconductor chamber further comprises a wiring assembly (400), wherein the wiring assembly (400) comprises a first wiring block (410) and a second wiring block (420), wherein the first wiring block (410) and the second wiring block (420) are both connected to the lining member (330), or are respectively connected to the two insulating bearing members (310); The positive electrode of the heating device (700) is connected to the first wiring block (410), and the negative electrode of the heating device (700) is connected to the second wiring block (420).

5. The semiconductor chamber according to claim 4, characterized in that: The semiconductor chamber further comprises a mounting assembly (500), wherein the mounting assembly (500) comprises a first fixing block (510) and a second fixing block (520), wherein the first fixing block (510) and the second fixing block (520) are respectively arranged on the two insulating bearing members (310); The first wiring block (410) is connected to the first fixing block (510), and the second wiring block (420) is connected to the second fixing block (520).

6. The semiconductor chamber according to claim 5, characterized in that: The side walls of the two insulating bearing members (310) are respectively provided with a lead wire inlet (314) and a first lead wire outlet (312), one of the lead wire inlet (314) and the first lead wire outlet (312) is used to insert a positive electrode current conducting wire, and the other is used to insert a negative electrode current conducting wire; The first fixing block (510) is used to be connected to the positive electrode conducting line, and the second fixing block (520) is used to be connected to the negative electrode conducting line.

7. The semiconductor chamber according to claim 4, characterized in that: The end surface of the lining member (330) is provided with a first notch (332) and a second notch (333); One of the insulating bearing members (310) is disposed in the first notch (332), and the other of the insulating bearing members (310) is disposed in the second notch (333); The lining device (300) further comprises a first insulating cover plate (341) and a second insulating cover plate (342), wherein the first insulating cover plate (341) is covered on the first notch (332), and the second insulating cover plate (342) is covered on the second notch (333).

8. The semiconductor chamber according to claim 3, characterized in that: The lining device (300) further comprises an insulating connector (320), wherein the insulating connector (320) is connected to the insulating bearing member (310); The second coil component (620) is fixed to the insulating connector (320).

9. The semiconductor chamber according to claim 8, characterized in that: The side wall of the insulating bearing member (310) is provided with a lead wire inlet (314) and a second lead wire outlet (313), one of the lead wire inlet (314) and the second lead wire outlet (313) is used to insert a positive electrode current conducting wire, and the other is used to insert a negative electrode current conducting wire; The two ends of the second coil component (620) are respectively used to be connected to the positive electrode current conducting line and the negative electrode current conducting line.

10. The semiconductor chamber according to any one of claims 1 to 9, characterized in that: The heating device (700) comprises a plurality of circles of baking elements (710), which are arranged at intervals from the center to the edge of the semiconductor chamber and are respectively opposite to the surface of the supporting device (200).

11. The semiconductor chamber according to claim 10, characterized in that: The ratio of the total projection area of ​​the multiple circles of the baking elements (710) along the first direction to the area of ​​the cross section of the inner cavity of the lining device (300) does not exceed a preset ratio, wherein the first direction is perpendicular to the cross section.

12. The semiconductor chamber according to claim 10, characterized in that Each circle of the baking elements (710) includes a first baking lamp (711) and a second baking lamp (712); The first baking lamp (711) comprises a first semicircular lamp segment (7111) and a first linear lamp segment (7112) and a second linear lamp segment (7113) respectively connected to two ends of the first semicircular lamp segment (7111); The second baking lamp (712) comprises a second semicircular lamp segment (7121) and a third linear lamp segment (7122) and a fourth linear lamp segment (7123) respectively connected to two ends of the second semicircular lamp segment (7121); The inner concave sides of the first semicircular light segment (7111) and the second semicircular light segment (7121) are interlocked, the first straight light segment (7112) and the third straight light segment (7122) are arranged in parallel, and the second straight light segment (7113) and the fourth straight light segment (7123) are arranged in parallel.

13. The semiconductor chamber according to any one of claims 1 to 9, characterized in that: The carrying device (200) is provided with a heating element.

Images