Tuning type spectrum detection chip and application thereof

Abstract

The invention discloses a tuning type spectrum detection chip and application thereof. The chip comprises a carrier and a plurality of spectrum detection units arranged on the surface of the carrier at intervals, the carrier can rotate around the rotating shaft to change the incident angle of the incident light, and the polarization direction of the incident light is perpendicular to the rotating shaft; each spectrum detection unit comprises a one-dimensional grating structure and a detector which are sequentially arranged in the light transmission direction, the plane where the one-dimensional grating structure is located is parallel to the rotating shaft, and when the incident angle is within the set range, the wavelength ranges sampled by the multiple spectrum detection units are different from one another. According to the invention, a plurality of spectrum detection units are cascaded on a single chip, an integrated spectrum detection chip with an ultra-large wavelength range can be realized under limited tuning efficiency, one spectrum detection unit is set as a de-unit, and the resonant wavelength of the de-unit is isolated from the working wavelengths of other spectrum detection units, so that the spectrum detection efficiency is improved. The method can be used for more effective de-noising signal processing, and high-precision anti-interference spectrum detection is realized.

Description

Technical Field

[0001] The present application relates to a spectrum detection chip, in particular to a tunable spectrum detection chip with low noise and large wavelength scanning range and its application in spectrum analysis, belonging to the technical field of optoelectronic devices. Background Art

[0002] Spectral analysis technology is one of the core technologies in the field of material detection. With the rapid increase in the demand for on-site rapid detection and spectral detection of various light-load platforms, micro-spectrometers and even chip spectrometers have attracted widespread attention. The integrated spectral detection function is obtained by integrating the optical dispersion function into the chip. Among them, the snapshot spectral detection chip obtains spectral detection by simultaneously sampling spectral information through a series of spectral sampling channels integrated on the chip, while the scanning spectral detection chip is generally based on a single sampling channel, and samples spectral information in sequence by tuning the sampling wavelength multiple times. Scanning spectral detection chips have lower costs and are suitable for cost-sensitive large-scale application scenarios. However, scanning spectral detection chips are usually limited by the tuning mechanism and face the problem of a narrow working wavelength range. Moreover, due to the dynamic tuning working mode, their noise interference is more significant, which limits the applicability of related technologies. Summary of the invention

[0003] The main purpose of this application is to provide a tunable spectrum detection chip and its application to overcome the shortcomings of the prior art.

[0004] In order to achieve the aforementioned invention objectives, the technical solutions adopted in this application include:

[0005] The first aspect of the present application provides a tunable spectrum detection chip, which includes:

[0006] A carrier capable of rotating about a rotation axis relative to a direction of incident light to change an incident angle of the incident light, wherein the incident light is linearly polarized light and a polarization direction is perpendicular to the rotation axis;

[0007] A plurality of spectral detection units, each of which comprises a detector and a one-dimensional grating structure arranged on the detector, wherein the one-dimensional grating structure and the detector are arranged in sequence along the transmission direction of the incident light in the chip, the plane where the one-dimensional grating structure is located is parallel to the rotation axis, and the plurality of spectral detection units are arranged at intervals on the surface of the carrier, and when the incident angle is within a set range, the wavelength ranges sampled by the plurality of spectral detection units are different from each other.

[0008] Furthermore, when the carrier is rotated relative to the direction of the incident light, angle scanning can be achieved.

[0009] In one embodiment, when the incident angle is within a set range, the sampling wavelength ranges of the plurality of spectrum detection units intersect in pairs in sequence.

[0010] Furthermore, the lower limit and upper limit of the sampling wavelength range of the plurality of spectral detection units are successively increased, that is, the detection ranges of the plurality of spectral detection units are cascaded. For example, if it is assumed that the integrated chip includes n spectral detection units (n≥2), the sampling wavelength range of the n-1th spectral detection unit is [λ min (n-1), λ max (n-1)], the sampling wavelength range of the nth spectral detection unit is [λ min n、λ max n], then λ min (n-1)<λ min n,λ min (n-1)<λ max (n-1)<λ max n, but λ mmx (n-1) can be less than, equal to, or greater than λ min n.

[0011] More preferably, if we define λ max (n-1)=x,λ min n=y, then y≤x≤(y+z), z≤10nm.

[0012] In one embodiment, the spectral detection unit includes a detector and a one-dimensional grating structure arranged on the detector, and the one-dimensional grating structure and the detector are arranged in sequence along the transmission direction of the incident light in the chip; and when the incident angle is within a set range, the resonance wavelength of the one-dimensional grating structure in one of the spectral detection units is different from the resonance wavelengths of the one-dimensional grating structures in other spectral detection units.

[0013] Furthermore, the resonance wavelength of each of the spectrum detection units is the resonance wavelength of the one-dimensional grating structure contained therein.

[0014] In one embodiment, the material and structure of the detectors included in the plurality of spectrum detection units are the same. Furthermore, in some cases, the resonance wavelength of one spectrum detection unit can be set outside the sampling wavelength range of the other spectrum detection units.

[0015] In one embodiment, the detector includes a photoelectric detector or a photothermoelectric detector. In some cases, the detector may also be other detectors capable of photoelectric conversion.

[0016] Furthermore, the detector can be directly prepared using a substrate. For example, a Si substrate material can be used as the photoelectric response material of the detector, and a metal-Si Schottky detector can be directly formed by processing it using a silicon process. Alternatively, a photoelectric response material can be introduced by transferring, bonding or epitaxial growth on the substrate surface, and then a detector (such as graphene, Ge, etc.) can be prepared on the substrate using a semiconductor device process. The substrate can be a part of the active area of ​​the detector, or it can only be used as a substrate. Alternatively, the substrate can also be used as the carrier mechanism, and an independently manufactured detector (such as an InGaAs, Si, HgTe, etc. detector) can be mounted on the substrate by means of a patch, etc., wherein the substrate and the detector are independent of each other and can be connected to each other by conductive lines, etc.

[0017] In one embodiment, the one-dimensional grating structure includes but is not limited to one of a one-dimensional dielectric grating and a one-dimensional metal grating. Exemplarily, the material of the one-dimensional grating structure includes metals such as gold, platinum, silver, copper, aluminum or titanium, and inorganic non-metallic materials or organic materials such as graphene, titanium nitride, zirconium nitride, indium tin oxide, zinc oxide, silicon dioxide, silicon nitride, aluminum oxide, hafnium oxide, magnesium fluoride or polymethyl methacrylate.

[0018] Furthermore, the one-dimensional grating structure transmits or absorbs light of different wavelengths at different incident angles.

[0019] Furthermore, the one-dimensional grating structure may be a part of the corresponding detector, or may be integrated above the corresponding detector. In some cases, the detector may be integrally provided with the one-dimensional grating structure.

[0020] In the present application, the surface of the carrier is preferably a plane. Further, in principle, the distance between two adjacent spectrum detection units should be as close as possible without contact, so as to minimize the impact of incident light distribution. For example, the distance between two adjacent spectrum detection units can be set to 5μm-2mm, preferably below 200μm, and more preferably below 50μm.

[0021] In one embodiment, the detection chip includes a substrate, the substrate has a fixed part and a rotatable part, the rotatable part is the carrier, and is rotatably mounted on the fixed part through a rotating shaft. Exemplarily, the fixed part has a frame structure, and the rotatable part is rotatably mounted in the frame structure through a rotating shaft.

[0022] Further, the material of the substrate can be selected from silicon or silicon on insulating substrate (SOI), etc., but is not limited thereto. Exemplarily, the substrate can be a device that rotates around an axis and is prepared on silicon or SOI based on MEMS technology or other silicon processes, such as a silicon micro-vibration mirror.

[0023] In one embodiment, the spectral detection unit has a first electrode and a second electrode, the first electrode and the second electrode are electrically connected to a first contact electrode and a second contact electrode via a first electrode wiring and a second electrode wiring, respectively, the first electrode wiring and the second electrode wiring both extend from the rotatable part to the fixed part along the rotating shaft, and the first contact electrode and the second contact electrode are arranged on the fixed part.

[0024] Furthermore, the first electrodes of the plurality of spectrum detection units can be interconnected to form a common electrode, and the common electrode is electrically connected to a first contact electrode via a first electrode wiring. With this design, the internal structure of the integrated chip can be more concise and the manufacturing difficulty can be lowered.

[0025] A second aspect of the present application provides a spectrum detection method, which is implemented based on the tunable spectrum detection chip, and includes:

[0026] Allowing the light to be detected to be incident on the tunable spectrum detection chip;

[0027] Rotating the carrier relative to the incident light to change the incident angle;

[0028] The corresponding detection signal output by the tunable spectrum detection chip when the carrier rotates at each angle is recorded and analyzed to achieve spectrum detection of the light to be detected.

[0029] In one embodiment, the method specifically includes: at each rotation angle, using multiple spectral detection units in the tunable spectral detection chip to simultaneously sample spectral information of different wavelengths, and defining the spectral detection unit that produces resonant absorption of the light to be detected as a working unit, and defining the spectral detection unit that does not produce resonant absorption of the light to be detected as a denoising unit, and subtracting the current signal output by the working unit from the current signal output by the denoising unit to obtain a denoised current signal, and then combining and analyzing all the denoised current signals obtained at all rotation angles to obtain the complete spectral information of the light to be detected.

[0030] Compared with the prior art, the present application can effectively expand the operating wavelength range of a single chip by cascading multiple tunable spectral detection units on a single chip, thereby obtaining an integrated spectral detection chip with an ultra-large wavelength range under limited tuning efficiency. Moreover, by setting one of the spectral detection units as a denoising spectral detection unit and isolating its resonant wavelength range from the operating wavelength ranges of other spectral detection units, it can be used to perform more effective denoising signal processing and achieve high-precision and anti-interference spectral detection. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1This is a schematic diagram of the structure of a tunable spectrum detection chip in a typical implementation scheme of the present application;

[0032] Figure 2 is a top view of a plurality of one-dimensional grating structures in a typical implementation scheme of the present application;

[0033] Figure 3 is a graph showing the corresponding relationship between the resonant wavelengths of multiple one-dimensional grating structures and the incident light angle in a typical implementation scheme of the present application;

[0034] Figure 4 is a schematic diagram of an integrated structure of a one-dimensional grating structure and a detector in a typical implementation scheme of the present application;

[0035] Figure 5 is a schematic diagram of an integrated structure of another one-dimensional grating structure and a detector in a typical implementation scheme of the present application;

[0036] Figure 6 It is a schematic diagram of an integrated structure of another one-dimensional grating structure and a detector in a typical implementation scheme of the present application;

[0037] Figure 7 is an absorption (transmission) spectrum diagram corresponding to multiple one-dimensional grating structures when the incident angle is θ1 in a typical embodiment of the present application;

[0038] Figure 8 yes Figure 1 The schematic diagram of the tunable spectrum detection chip performing segmented tuning is shown;

[0039] Fig. 9 is a detection signal diagram extracted by Q1 and Q2 when the incident angle varies within [θ1, θ2] in Example 1;

[0040] Fig.10 is a low noise detection signal diagram obtained by subtracting the signal of Q1 from the signal of Q2 in Example 1;

[0041] Fig.11 is a diagram of detection signals extracted by Q1 and Q3 when the incident angle varies within [θ1, θ2] in Example 1;

[0042] Fig.12 This is a diagram of a low-noise detection signal obtained by subtracting the signal of Q1 from the signal of Q3 in Example 1. DETAILED DESCRIPTION

[0043] For on-chip integrated wavelength tuning technology, it is generally limited by factors such as low tuning efficiency of electro-optical / thermo-optical / optical-mechanical-mechanical in a small space, and has defects such as limited wavelength tuning range and poor applicability. In view of these shortcomings of the prior art, the inventor of this case has proposed the technical solution of this application after long-term research and extensive practice, which mainly realizes a tuned spectrum detection chip with a large working wavelength range by dynamically cascading multiple spectrum detection units for segmented tuning, and improves the detection accuracy by signal denoising between spectrum detection units.

[0044] Furthermore, in the technical solution of the present application, the resonance wavelengths of different one-dimensional grating structures under the same tuning drive signal (rotation angle) are mainly constructed to realize the mutual complementation of multiple spectrum detection units in the wavelength dimension, thereby obtaining an integrated spectrum detection chip with a super-large wavelength range under limited tuning efficiency. Then, by integrating a denoising spectrum detection unit (defined as a denoising unit) whose resonance wavelength range is isolated from the working wavelength range of other spectrum detection units (defined as working units), it is used to perform more effective denoising signal processing to achieve high-precision and anti-interference spectrum detection.

[0045] The technical solution of this application, its implementation process and principle are further explained as follows.

[0046] See also Figure 1-Figure 2 As shown, in a typical embodiment of the present application, a tunable spectrum detection chip is mainly composed of a substrate 1 and a plurality of spectrum detection units, and each spectrum detection unit is mainly composed of a detector and a one-dimensional grating structure.

[0047] Exemplarily, the detection chip includes four spectral detection units, which can be numbered Q1, Q2, Q3, Q4 (hereinafter referred to as Q1, Q2, Q3, Q4). The four spectral detection units respectively include four detectors 21, 22, 23, 24. The four detectors 21, 22, 23, 24 are respectively integrated with one-dimensional grating structures 51, 52, 53, 54.

[0048] The resonant wavelength of each of the four one-dimensional grating structures is related to the incident light angle. For example, see Figure 3 When the incident angle range of the incident light is within [θ1, θ2], the resonance wavelength range of the one-dimensional grating structure 51 is [λ11, λ12], the resonance wavelength range of the one-dimensional grating structure 52 is [λ21, λ22], the resonance wavelength range of the one-dimensional grating structure 53 is [λ31, λ32], and the resonance wavelength range of the one-dimensional grating structure 54 is [λ41, λ42].

[0049] Taking the one-dimensional grating structure 51 as an example, it can be integrated on the corresponding detector 21, such as Figure 4As shown, the one-dimensional grating structure 51 can be formed of metal and / or dielectric material, and the transmitted light of the incident light after passing through the one-dimensional grating structure 51 is received by the detector 21 .

[0050] Alternatively, the one-dimensional grating structure 51 may also be a part of the corresponding detector 21, such as Figure 5 As shown, 211 is a semiconductor structure, 212 is a metal structure, and the metal-semiconductor contact can form a Schottky detector. At the same time, the one-dimensional grating structure 51 has the characteristic of angle sensitivity, so that only the light energy of the corresponding wavelength at each incident light angle can be selectively absorbed by the one-dimensional grating structure 51, and then converted into current output by the Schottky detector.

[0051] For another example, the one-dimensional grating structure 51 can also be Figure 6 The method shown is integrated with the corresponding detector 21, where 511 is a dielectric structure, which can be made of SiO2, SiN and other dielectric materials, 512 is a metal structure, and the detector 21 can be an InGaAs detector, etc. After the incident light passes through the one-dimensional grating structure 51, it is transmitted to the detector 21.

[0052] When the incident angle is θ1, the absorption / transmission spectra corresponding to the four one-dimensional grating structures 51, 52, 53, and 54 are as follows: Figure 7 shown.

[0053] As a specific implementation of this typical implementation scheme, please refer to Figure 1 As shown, the substrate 1 may have a rotatable part 11 and a fixed part 12, the fixed part 12 may have a frame structure, and the rotatable part 11 may be rotatably arranged in the frame structure through a rotating shaft 13. The four detectors 21, 22, 23, and 24 are all arranged on the rotatable part 11, and each detector has at least two electrodes, which constitute the working electrodes of the corresponding spectrum detection unit. Assume that each detector has two electrodes, a first electrode and a second electrode, and the first working electrodes of the four detectors can be electrically connected to each other through the first electrode wiring 30 to form a common electrode, and are electrically connected to the first contact electrode 40 through the electrode wiring 30. The second working electrodes of the four detectors can be electrically connected to the second contact electrodes 41, 42, 43, and 44 through the second electrode wiring 31, 32, 33, and 34, respectively. The aforementioned first contact electrode and the second contact electrode are both arranged on the fixed part 12. The aforementioned first electrode wiring and the second electrode wiring are both led out from the rotatable part 11 to the fixed part 12 through the rotating shaft 13.

[0054] Further, see Figure 8When the detection chip is working, the rotatable part 11 rotates around the rotating shaft 13 under the driving signal and drives multiple spectrum detection units to rotate together. Relative to the one-dimensional grating structure, the angle variation range of the incident light 6 is the angle range of the rotation angle θ of the rotatable part 11. The output electrical signal of each detector at each rotation angle is recorded by the contact electrode. Each spectrum detection unit works independently. When the rotation angle of the rotatable part 11 is controlled in the range of θ1-θ2, the spectra in the range of [λ11, λ12], [λ21, λ22], [λ31, λ32], and [λ41, λ32] can be collected and analyzed from the four spectrum detection units. More preferably, λ12=λ21, λ22=λ31, and λ32=λ41 can be made. Then, by combining the data sampled by multiple spectrum detection units, the spectrum information in the large wavelength range of [λ11, λ42] can be obtained, thereby realizing the expansion of the working wavelength range of the tunable spectrum detection chip. Furthermore, in order to improve the process tolerance, λ21<λ12<(λ21+10nm) (and other similar conditions) may be selected to ensure that each band has an overlap within 10nm.

[0055] On the other hand, since the four spectral detection units are all prepared on the same rotatable part 11, the device material structure and the like are the same, and the difference between different spectral detection units is only that the one-dimensional grating structure is different, so that the wavelength range of spectral sampling is different, and the system vibration, temperature change, light source change, dark current caused by the electrical structure of the detector, and the photocurrent caused by the non-resonant absorption (transmission) light of the one-dimensional grating structure can be regarded as consistent, which are all noises that interfere with the detection accuracy. Therefore, the aforementioned noise can be suppressed by signal difference between different spectral detection units. For example, the resonant wavelength of Q1 is set outside the response wavelength range of detectors 21, 22, 23, and 24. Then, when the rotation angle of the rotatable part 11 is within [θ1, θ2], although the resonant wavelength of the spectral detection unit is in the [λ11, λ12] band, it cannot be converted into photocurrent by detector 21, so the signals recorded on detector 21 are all noise. Then, when extracting the detection signals (current signals) numbered Q2, Q3, and Q4, the detection signal of Q1 at the same rotation angle can be subtracted to obtain a detection signal with a low noise level, and finally a high-quality detection signal in the [λ21, λ42] band can be obtained. The noise level of the spectral detection unit prepared by the same process can be very close, so its denoising effect is much better than that of the reference detector (Ref) simply covered with a light-blocking layer. It should be noted that the reference detector is formed by covering the same device as the above-mentioned spectral detection unit with a light-blocking layer, so it can be used to achieve sampling without light as noise.

[0056] In particular, when the detection chip is working, multiple spectrum detection units perform dynamic cascade detection. At each rotation angle, different spectrum detection units simultaneously sample spectrum information of different wavelengths, and perform denoising in the above manner, and finally combine all denoised signals sampled at all angles to form complete spectrum information of the light to be detected.

[0057] The technical solution of the present application is further described in detail below in combination with several embodiments.

[0058] Example 1 The structure of a tunable spectrum detection chip provided in this example can be found in Figure 1 , which includes a MEMS silicon micro-vibration mirror made based on an SOI substrate. The rotatable part 11 in the silicon micro-vibration mirror serves as the above-mentioned carrier, and its size is approximately 3000×3000×500μm. The rotation angle range is 0-10°, and the corresponding incident angle range of the incident light is [θ1, θ2], θ1, θ2 are approximately 0° and 10° respectively. There are 4 detectors 21, 22, 23, and 24 with exactly the same material and structure arranged in an array on the carrier. The 4 detectors are all InGaAs detectors, and their detection wavelength range is 900-1700nrm. The spacing between the 4 InGaAs detectors is approximately 50μm. At the same time, the four InGaAs detectors are respectively provided with 4 one-dimensional grating structures 51, 52, 53, and 54 composed of one-dimensional metal gratings, such as Figure 2 and Figure 4 As shown, four spectral detection units numbered Q1, Q2, Q3, and Q4 are formed. Among them, the period of the one-dimensional grating structure 51 is about 200nm, the grating width is about 100nm, the grating depth is about 60nm, and the resonant wavelength is less than 500nm, which serves as a denoising unit. The period of the one-dimensional grating structure 52 is about 1040nm, the grating width is about 520nm, the grating depth is about 60nm, and the resonant wavelength range is about 900-1180nm. The period of the one-dimensional grating structure 53 is about 1300nm, the grating width is about 650nm, the grating depth is about 60nm, and the resonant wavelength range is about 1170-1440nm. The period of the one-dimensional grating structure 54 is about 1570nm, the grating width is about 785nm, the grating depth is about 60nm, and the resonant wavelength range is about 1430-1700nm. Combined with all four spectral detection units, the detection chip can scan a wavelength range of about 900-1700nm.

[0059] The working principle of the detection chip is as described above. When the light to be detected is incident on the detection chip and the carrier is rotated so that the incident angle changes between [θ1, θ2], the spectral detection signal (mainly the photocurrent signal) extracted based on Q1 and Q2 is as follows: Fig. 9As shown, by subtracting the spectrum detection signal of Q1 from the spectrum detection signal of Q2, a spectrum detection signal with a low noise level can be obtained, such as Fig.10 Similarly, when the incident angle changes in [θ1, θ2], the spectral detection signal extracted based on Q1 and Q3 is as follows: Fig.11 As shown, by subtracting the spectrum detection signal of Q1 from the spectrum detection signal of Q3, a spectrum detection signal with a low noise level can be obtained, such as Fig.12 shown.

[0060] Embodiment 2 The structure of a tunable spectrum detection chip provided in this embodiment is basically the same as that of Embodiment 1, except that: the structure of the four spectrum detection units is as follows: Figure 5 As shown, it includes one-dimensional silicon material gratings 211, 221, 231, 241 formed by processing on the front side of the rotatable part 11 and gold films 212, 222, 232, 242 covering the gratings 211, 221, 231, 241, respectively forming Schottky detectors through gold-silicon contact, namely, spectral detection units Q1, Q2, Q3, Q4. The angle range of chip rotation is 0-5°. Without considering the grating effect, the detection wavelength range of the gold-silicon Schottky detector is 500-1500nm. Due to the inclusion of the grating structure, the four detectors themselves are angle sensitive. The period of the grating 211 is about 200nm, the gate width is about 100nm, the gate depth is about 25nm, the gold film 212 is about 50nm, and the resonance wavelength is less than 500nm, which serves as a de-noising unit. The period of grating 221 is about 900nm, the gate width is about 450nm, the gate depth is about 25nm, the gold film 222 is about 50nm, and the resonant wavelength range is about 800-1010nm. The period of grating 231 is about 1100nm, the gate width is about 550nm, the gate depth is about 25nm, the gold film 232 is about 50nm, and the resonant wavelength range is about 1010-1210nm. The period of grating 241 is about 1300nm, the gate width is about 650nm, the gate depth is about 25nm, the gold film 242 is about 50nm, and the resonant wavelength range is about 1210-1410nm. The gold film 212 in each detector also serves as its first working electrode, and at the same time, the second working electrode of each detector can be formed by depositing metal materials such as Ti, Al, Au on the back of the rotatable part 11. The wavelength range that the detection chip can scan is about 800-1400nm.

[0061] Embodiment 3 The structure of a tunable spectrum detection chip provided in this embodiment is basically the same as that of Embodiment 1, except that: the structure of the four spectrum detection units is as follows: Figure 6As shown, each of them includes a detector arranged on the surface of the rotatable part 11 of the silicon micro-vibration mirror and a one-dimensional grating structure arranged on the detector. The rotatable angle range is 0-10°. The four detectors 21, 22, 23, and 24 use the same InGaAs detector, and their detection wavelengths are all 900-1700nm. The four detectors are respectively provided with four one-dimensional grating structures 51, 52, 53, and 54 composed of SiO2 gratings and covered Au films, as shown in FIG. Figure 2 and Figure 6 As shown, four spectral detection units numbered Q1, Q2, Q3, and Q4 are formed. The structures of the SiO2 gratings in the four one-dimensional grating structures are all different, wherein the period of the one-dimensional grating structure 51 is about 200nm, the grating width is about 100nm, the grating depth is about 60nm, and the resonant wavelength is less than 500nm. The period of the one-dimensional grating structure 52 is about 1040nm, the grating width is about 520nm, the grating depth is about 60nm, and the resonant wavelength range is about 900-1180nm. The period of the one-dimensional grating structure 53 is about 1300nm, the grating width is about 650nm, the grating depth is about 60nm, and the resonant wavelength range is about 1170-1440nm. The period of the one-dimensional grating structure 54 is about 1570nm, the grating width is about 785nm, the grating depth is about 60nm, and the resonant wavelength range is about 1430-1700nm. The thickness of the Au film 512 in the one-dimensional grating structures 51, 52, 53, and 54 is 30 nm. The scannable wavelength range is approximately 900-1700 nm.

[0062] It should be understood that the above embodiments are only for illustrating the technical concept and features of the present application, and their purpose is to enable people familiar with the technology to understand the content of the present application and implement it accordingly, and they cannot be used to limit the protection scope of the present application. Any equivalent changes or modifications made according to the spirit of the present application should be included in the protection scope of the present application.

Claims

1. A tunable spectrum detection chip, characterized in that: include: A carrier capable of rotating about a rotation axis relative to a direction of incident light to change an incident angle of the incident light, wherein the incident light is linearly polarized light and a polarization direction is perpendicular to the rotation axis; A plurality of spectral detection units, each of which comprises a detector and a one-dimensional grating structure arranged on the detector, wherein the one-dimensional grating structure and the detector are arranged in sequence along the transmission direction of the incident light in the chip, the plane where the one-dimensional grating structure is located is parallel to the rotation axis, and the plurality of spectral detection units are arranged at intervals on the surface of the carrier, and when the incident angle is within a set range, the wavelength ranges sampled by the plurality of spectral detection units are different from each other.

2. The tunable spectrum detection chip according to claim 1, characterized in that: When the incident angle is within a set range, the sampling wavelength ranges of the plurality of spectrum detection units intersect in pairs in sequence.

3. The tunable spectrum detection chip according to claim 2, characterized in that: The integrated chip comprises n spectral detection units, n≥2, wherein the sampling wavelength range of the n-1th spectral detection unit is [λ min (n-1), λ max (n-1)], the sampling wavelength range of the nth spectral detection unit is [λ min n、λ max n],λ min (n-1)<λ min n, λ min (n-1)<λ max (n-1)<λ max n, λ max (n-1)=x,λ min n=y, y≤x≤(y+z), z≤10nm.

4. The tunable spectrum detection chip according to claim 1, characterized in that: When the incident angle is within a set range, the resonance wavelength of the one-dimensional grating structure in one spectrum detection unit is different from the resonance wavelengths of the one-dimensional grating structures in other spectrum detection units.

5. The tunable spectrum detection chip according to claim 4, characterized in that: The material and structure of the detectors contained in the plurality of spectrum detection units are the same; And / or, the detector is integrally arranged with the one-dimensional grating structure; and / or, the detector comprises a photoelectric detector or a photothermoelectric detector; And / or, the surface of the carrier is flat; And / or, the distance between two adjacent spectrum detection units is 5 μm-2 mm.

6. The tunable spectrum detection chip according to claim 1, characterized in that: The detection chip comprises a substrate, wherein the substrate has a fixed part and a rotatable part, wherein the rotatable part is the carrier and is rotatably mounted on the fixed part via a rotating shaft.

7. The tunable spectrum detection chip according to claim 1, characterized in that: The spectral detection unit has a first electrode and a second electrode, the first electrode and the second electrode are electrically connected to a first contact electrode and a second contact electrode via a first electrode wiring and a second electrode wiring, respectively, the first electrode wiring and the second electrode wiring both extend from the rotatable part to the fixed part along the rotating shaft, and the first contact electrode and the second contact electrode are arranged on the fixed part.

8. The tunable spectrum detection chip according to claim 7, characterized in that: The first electrodes of the plurality of spectrum detection units are interconnected to form a common electrode, and the common electrode is electrically connected to a first contact electrode via a first electrode wiring.

9. A spectrum detection method, characterized in that: The method is implemented based on the tunable spectrum detection chip according to any one of claims 1 to 8, and the method comprises: Allowing the light to be detected to be incident on the tunable spectrum detection chip; Rotating the carrier relative to the incident light to change the incident angle; The corresponding detection signal output by the tunable spectrum detection chip when the carrier rotates at each angle is recorded and analyzed to achieve spectrum detection of the light to be detected.

10. The spectrum detection method according to claim 9, characterized in that: Specifically include: At each rotation angle, multiple spectral detection units in the tunable spectral detection chip simultaneously sample spectral information of different wavelengths, and the spectral detection unit that produces resonant absorption of the light to be detected is defined as a working unit, and the spectral detection unit that does not produce resonant absorption of the light to be detected is defined as a denoising unit, and the current signal output by the working unit is subtracted from the current signal output by the denoising unit to obtain a denoised current signal, and then all the denoised current signals obtained at all rotation angles are combined and analyzed to obtain the complete spectral information of the light to be detected.

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