Double-pulse sequence laser-assisted in-situ chemical etching method for improving semiconductor thinning efficiency

Through the dual-pulse sequence laser-assisted in-situ chemical etching method, combined with the characteristics of nanosecond laser and ultrafast laser, the shortcomings of existing semiconductor thinning technology in efficiency and surface quality control are solved, and the wafer thinning effect is achieved with high efficiency and low damage.

CN119725086APending Publication Date: 2025-03-28BEIHANG UNIV
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Patent Information

Application Number
CN202411874686.7
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-19
Publication Date
2025-03-28

AI Technical Summary

Technical Problem

The existing semiconductor thinning technology has shortcomings in efficiency, material removal rate and surface quality control, especially for materials with high hardness and high brittleness, it is easy to cause microcrack propagation or subsurface damage.

Method used

The dual-pulse sequence laser-assisted in-situ chemical etching method is used to achieve dual optimization of high efficiency and surface quality in wafer thinning process through efficient ablation of nanosecond laser and precise processing of ultrafast lasers, combined with chemical etching technology.

Benefits of technology

It significantly improves the thinning efficiency of semiconductor wafers, reduces damage to the wafer surface during processing, optimizes the substrate surface quality, and provides a new technical approach for the manufacturing of high-performance semiconductor devices.

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Abstract

The invention discloses a double-pulse-sequence laser-assisted in-situ chemical etching method for improving semiconductor thinning efficiency. The method comprises the following steps: firstly, placing a semiconductor wafer in a prepared chemical etching solution; then the liquid level height is adjusted, and nanosecond and ultrafast laser multi-focus flat-topped light beams are modulated through a spatial light modulator; then performing first processing on the semiconductor material in the ablation liquid by using nanosecond laser to realize removal at a specific depth, and then performing second processing by using ultrafast laser to remove a defect layer introduced by the nanosecond laser and optimize the quality of the substrate; and finally, the semiconductor material is taken out, and atomic-scale flattening processing is carried out through chemical mechanical polishing. The method has the advantages of high efficiency, high repeatability, high controllability and the like, and the thinning efficiency and quality of the semiconductor substrate can be effectively improved.
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