Test method, test device and electronic equipment

Abstract

The invention discloses a test method, a test device and electronic equipment, and the method comprises the steps: controlling a detection system corresponding to a plurality of detection methods to detect a prefabricated part battery, and obtaining a plurality of detection resistors in one-to-one correspondence with a plurality of preset relationships, the structural information of the prefabricated part battery comprises one of the following information: film layers on two sides in the prefabricated part battery are respectively a first doping layer and a substrate, and film layers on two sides in the prefabricated part battery are respectively a first doping layer and a second doping layer; the detection resistor and at least one of the following target resistors meet a corresponding preset relationship: the resistance of the first doping layer, the resistance of the second doping layer and the resistance of the substrate; according to the detection resistance, the preset relation corresponding to the detection resistance and the preset resistance, the tunneling resistance and / or tunneling resistivity of the tunneling passivation layer are / is determined, and the preset resistance comprises the resistance of the substrate. The problem that the tunneling resistance and / or the tunneling resistivity of the solar cell cannot be rapidly and accurately detected is solved.

Description

Technical Field

[0001] The present application relates to the technical field of solar resistivity testing, and in particular to a testing method, a testing device and an electronic device. Background Art

[0002] The resistance of the tunnel passivation layer commonly found in tunnel oxide passivating contact solar cells (TOPcon, Tunnel Oxide Passivating Contacts) is difficult to accurately test, and is usually tested using special samples, such as double-sided tunnel passivation + double-sided diffusion samples after metallization, and then offline testing of the resistance along the thickness of the cell to estimate the tunnel resistance. The commonly used methods include the following defects: the samples used to test the tunnel resistance are difficult to make, the preparation cycle is long, metal electrode consumables are consumed, and the measured values ​​are unstable; it is difficult to achieve online detection using traditional methods. Summary of the invention

[0003] The present application provides a testing method, a testing device and an electronic device to solve the problem in the related art that the tunneling resistance and / or tunneling resistivity of a solar cell cannot be detected quickly and accurately.

[0004] According to one aspect of the present application, a detection method is provided, comprising: controlling detection systems corresponding to a plurality of detection methods to detect a preform battery, and obtaining a plurality of detection resistors corresponding to a plurality of preset relationships, wherein the structural information of the preform battery comprises one of the following: the film layers located on both sides of the preform battery are respectively a first doping layer and a substrate, and the film layers located on both sides of the preform battery are respectively a first doping layer and a second doping layer, wherein the first doping layer is located on a side of a tunneling passivation layer in the preform battery away from the substrate, the second doping layer is located on a side of the substrate away from the tunneling passivation layer, the first doping layer and the second doping layer have different polarities, and the first doping layer has the same doping polarity as the substrate; the detection resistor satisfies a corresponding preset relationship with at least one of the following target resistors: the resistance of the first doping layer, the resistance of the second doping layer, and the resistance of the substrate; determining the tunneling resistance and / or tunneling resistivity of the tunneling passivation layer according to the detection resistor, the preset relationship corresponding to the detection resistor, and the preset resistance, and the preset resistance comprises the resistance of the substrate.

[0005] Optionally, structural information of the prefabricated battery is obtained; and multiple detection methods and multiple preset relationships corresponding to the multiple detection methods are determined based on the structural information.

[0006] Optionally, detection systems corresponding to multiple detection methods are controlled to detect the preform battery to obtain multiple detection resistors corresponding to multiple preset relationships, including: when the structural information includes that the film layers on both sides of the preform battery are the first doping layer and the substrate, respectively, the first detection system is controlled to use the first detection method to detect the first doping layer and the substrate to obtain the first detection resistance, the first detection method has a corresponding first preset relationship, and the first preset relationship includes: the relationship between the first detection resistance, the resistance of the first doping layer, the tunneling resistance and the resistance of the substrate; the second detection system is controlled to use the second detection method to detect the first doping layer and the substrate to obtain the second detection resistance, or the third detection system is controlled to use the third detection method to detect the preform battery to obtain the third detection resistance, the second detection method has a corresponding second preset relationship, the third detection method has a corresponding third preset relationship, the first doping layer and the substrate have the same polarity, the second preset relationship includes: the relationship between the second detection resistance, the resistance of the first doping layer and the resistance of the substrate, and the third preset relationship includes: the relationship between the third detection resistance, the resistance of the first doping layer and the resistance of the substrate.

[0007] Optionally, detection systems corresponding to multiple detection methods are controlled to detect the preform battery to obtain multiple detection resistors corresponding to multiple preset relationships, including: when the structural information includes that the film layers on both sides of the preform battery are respectively the first doped layer and the second doped layer, the second detection system is controlled to use the second detection method to detect the first doped layer and the substrate to obtain the second detection resistance, the second detection method has a corresponding second preset relationship, the first doped layer and the substrate have the same polarity, and the second preset relationship includes: the relationship between the second detection resistance, the resistance of the first doped layer, and the resistance of the substrate; the first detection system is controlled to use the first detection method to detect the first doped layer and the substrate to obtain the first detection resistance, the first detection method has a corresponding first preset relationship, and the first preset relationship includes: the relationship between the first detection resistance, the resistance of the first doped layer, the tunneling resistance, and the resistance of the substrate.

[0008] Optionally, the detection systems corresponding to the plurality of detection methods are controlled to detect the preform battery, and a plurality of detection resistors corresponding to the plurality of preset relationships are obtained, including: when the structural information includes that the film layers on both sides of the preform battery are the first doping layer and the second doping layer, respectively, the first detection system is controlled to detect the second doping layer using the first detection method to obtain a first sub-detection resistor, or the second detection system is controlled to detect the second doping layer using the second detection method to obtain a second detection resistor, the first detection method has a corresponding fourth preset relationship, the fourth preset relationship includes the first sub-preset relationship and the second sub-preset relationship, and the first sub-preset relationship includes: the relationship between the first sub-detection resistor and the resistance of the second doping layer The second sub-preset relationship includes: the relationship between the second sub-detection resistance, the resistance of the first doped layer, the tunneling resistance and the resistance of the substrate, the second detection method has a corresponding fifth preset relationship, the fifth preset relationship includes: the relationship between the second detection resistance, the resistance of the second doped layer and the resistance of the first doped layer; the third detection system is controlled to use the third detection method to detect the preform battery to obtain the third detection resistance, the third detection method has a corresponding sixth preset relationship, the sixth preset relationship includes: the relationship between the third detection resistance, the resistance of the first doped layer, the resistance of the second doped layer and the resistance of the substrate; the first detection system is controlled to use the first detection method to detect the first doped layer and the substrate to obtain the second sub-detection resistance.

[0009] Optionally, the tunneling resistance and / or tunneling resistivity of the tunneling passivation layer is determined according to the detection resistance, a preset relationship corresponding to the detection resistance and a preset resistance, including: when controlling the second detection system to adopt the second detection method to detect the first doped layer and the substrate, determining the resistance of the first doped layer according to the second detection resistance and the second preset relationship; when controlling the third detection system to adopt the third detection method to detect the first doped layer and the substrate, determining the resistance of the first doped layer according to the third detection resistance and the third preset relationship; determining the tunneling resistance and / or tunneling resistivity of the tunneling passivation layer according to the resistance of the first doped layer, the first detection resistance and the first preset relationship.

[0010] Optionally, the tunneling resistance and / or tunneling resistivity of the tunneling passivation layer is determined based on the detection resistance, the preset relationship corresponding to the detection resistance and the preset resistance, including: determining the resistance of the first doped layer based on the second detection resistance and the second preset relationship; determining the tunneling resistance and / or tunneling resistivity of the tunneling passivation layer based on the resistance of the first doped layer, the first detection resistance and the first preset relationship.

[0011] Optionally, the tunneling resistance and / or tunneling resistivity of the tunneling passivation layer is determined according to the detection resistance, the preset relationship corresponding to the detection resistance and the preset resistance, including: when the first detection system is controlled to adopt the first detection method to detect the second doped layer to obtain the first detection resistance, the resistance of the first doped layer is determined according to the first sub-detection resistance, the third detection resistance, the first sub-preset relationship and the sixth preset relationship; when the second detection system is controlled to adopt the second detection method to detect the second doped layer to obtain the second detection resistance, the resistance of the first doped layer is determined according to the second detection resistance, the third detection resistance, the fifth preset relationship and the sixth preset relationship; the tunneling resistance and / or tunneling resistivity of the tunneling passivation layer is determined according to the resistance of the first doped layer, the second sub-detection resistance and the second sub-preset relationship.

[0012] According to another aspect of the present application, a testing device is provided, comprising: a control module, used to control a detection system corresponding to a plurality of detection methods to detect the preform battery, and obtain a plurality of detection resistors corresponding to a plurality of preset relationships, wherein the structural information of the preform battery comprises one of the following: the film layers located on both sides of the preform battery are respectively a first doping layer and a substrate, and the film layers located on both sides of the preform battery are respectively the first doping layer and the second doping layer, wherein the first doping layer is located on a side of the tunneling passivation layer in the preform battery away from the substrate, and the second doping layer is located on a side of the substrate away from the tunneling passivation layer, the first doping layer and the second doping layer have different polarities, and the first doping layer has the same doping polarity as the substrate; the detection resistor satisfies a corresponding preset relationship with at least one of the following target resistors: the resistance of the first doping layer, the resistance of the second doping layer, and the resistance of the substrate; a first determination module, used to determine the tunneling resistivity of the tunneling passivation layer according to the detection resistor, the preset relationship corresponding to the detection resistor, and a preset resistance, and the preset resistance comprises the resistance of the substrate.

[0013] Optionally, the testing device further includes: an acquisition module for acquiring structural information of the preform battery; and a second determination module for determining a plurality of detection methods and a plurality of preset relationships corresponding to the plurality of detection methods according to the structural information.

[0014] According to another aspect of the present application, a computer-readable storage medium is provided, the computer-readable storage medium including a stored program, wherein when the program is run, a test method executed by a device where the computer-readable storage medium is located is controlled.

[0015] According to another aspect of the present application, an electronic device is provided, comprising: one or more processors, a memory, and one or more programs, wherein the one or more programs are stored in the memory and are configured to be executed by the one or more processors, and the one or more programs include a test method for execution.

[0016] Through the testing method of the present application, the detection system corresponding to the above-mentioned detection method is controlled to detect the preform battery, and the resistance obtained by the detection has a corresponding relationship with the above-mentioned preset relationship. According to the detection resistance, the preset relationship corresponding to the detection resistance and the preset resistance, the tunneling resistance and / or tunneling resistivity of the tunneling passivation layer are determined, thereby realizing rapid and accurate testing of the tunneling resistance and / or tunneling resistivity of the preform battery, thereby solving the problem in the related art that the tunneling resistance and / or tunneling resistivity of the solar cell cannot be quickly and accurately detected. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The drawings constituting a part of the present application are used to provide a further understanding of the present application. The illustrative embodiments and descriptions of the present application are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0018] Figure 1 A hardware structure block diagram of a mobile terminal for executing a test method provided in an embodiment of the present application is shown;

[0019] Figure 2 It is a schematic diagram of a flow structure of a testing method provided according to an embodiment of the present application;

[0020] Figure 3 It is a structural schematic diagram of a testing method provided according to an embodiment of the present application;

[0021] Figure 4 is a structural schematic diagram of another testing method provided according to an embodiment of the present application;

[0022] Figure 5 is a structural schematic diagram of another testing method provided according to an embodiment of the present application;

[0023] Figure 6 is a structural schematic diagram of another testing method provided according to an embodiment of the present application;

[0024] Figure 7 is a structural schematic diagram of another testing method provided according to an embodiment of the present application;

[0025] Figure 8 It is a structural block diagram of a testing device provided according to an embodiment of the present application.

[0026] The above drawings include the following reference numerals:

[0027] 102. Processor; 104. Memory; 106. Transmission device; 108. Input / output device; 10. First doping layer; 20. Substrate; 30. Tunneling passivation layer; 40. First detection system; 50. Second detection system; 51. Light source; 52. Capacitor electrode; 60. Third detection system; 61. Eddy current sensor; 62. Coil; 70. Second doping layer. DETAILED DESCRIPTION

[0028] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0029] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present application.

[0030] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequential order. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present application described here. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device comprising a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0031] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the accompanying drawings in the embodiments of the present invention.

[0032] The method embodiments provided in the embodiments of the present application can be executed in a mobile terminal, a computer terminal or a similar computing device. Taking running on a mobile terminal as an example, Figure 1 FIG. 1 is a hardware structure diagram of a mobile terminal of a test method according to an embodiment of the present invention. Figure 1 As shown, the mobile terminal may include one or more ( Figure 1Only one is shown in the figure) a processor 102 (the processor 102 may include but is not limited to a processing device such as a microprocessor MCU or a programmable logic device FPGA) and a memory 104 for storing data, wherein the mobile terminal may also include a transmission device 106 and an input / output device 108 for communication functions. It can be understood by those skilled in the art that Figure 1 The structure shown is only for illustration and does not limit the structure of the mobile terminal. Figure 1 More or fewer components as shown, or with Figure 1 Different configurations shown.

[0033] The memory 104 can be used to store computer programs, for example, software programs and modules of application software, such as the computer program corresponding to the test method in the embodiment of the present invention. The processor 102 executes various functional applications and data processing by running the computer program stored in the memory 104, that is, the above method is implemented. The memory 104 may include a high-speed random access memory, and may also include a non-volatile memory, such as one or more magnetic storage devices, flash memory, or other non-volatile solid-state memory. In some examples, the memory 104 may further include a memory remotely arranged relative to the processor 102, and these remote memories may be connected to the mobile terminal via a network. Examples of the above-mentioned network include but are not limited to the Internet, an intranet, a local area network, a mobile communication network, and a combination thereof. The transmission device 106 is used to receive or send data via a network. The above-mentioned specific examples of the network may include a wireless network provided by a communication provider of the mobile terminal. In one example, the transmission device 106 includes a network adapter (Network Interface Controller, referred to as NIC), which can be connected to other network devices through a base station so as to communicate with the Internet. In one example, the transmission device 106 may be a radio frequency (RF) module, which is used to communicate with the Internet wirelessly.

[0034] In this embodiment, a method for detecting insulators running on a mobile terminal, a computer terminal or a similar computing device is provided. It should be noted that the steps shown in the flowchart of the accompanying drawings can be executed in a computer system such as a set of computer executable instructions, and although a logical order is shown in the flowchart, in some cases, the steps shown or described can be executed in an order different from that shown here.

[0035] Figure 2 is a flow chart of a testing method according to an embodiment of the present application. Figure 2 As shown, the method comprises the following steps:

[0036] Step S201: Control the detection systems corresponding to the plurality of the above detection methods to detect the preform battery, and obtain a plurality of detection resistors corresponding to the plurality of the above preset relationships, wherein the structural information of the preform battery includes one of the following: the film layers located on both sides of the preform battery are respectively the first doping layer and the substrate, and the film layers located on both sides of the preform battery are respectively the first doping layer and the second doping layer, wherein the first doping layer is located on the side of the tunneling passivation layer in the preform battery away from the substrate, and the second doping layer is located on the side of the substrate away from the tunneling passivation layer, the first doping layer and the second doping layer have different polarities, and the first doping layer and the substrate have the same doping polarity, and the detection resistor satisfies the corresponding preset relationship with at least one of the following target resistors: the resistance of the first doping layer, the resistance of the second doping layer, and the resistance of the substrate;

[0037] Step S202: determining the tunneling resistance and / or tunneling resistivity of the tunneling passivation layer according to the detection resistance, the preset relationship corresponding to the detection resistance, and the preset resistance, wherein the preset resistance includes the resistance of the substrate.

[0038] The present application detects the preform battery by controlling the detection system corresponding to the above-mentioned detection method. The resistance obtained by the detection has a corresponding relationship with the above-mentioned preset relationship. The tunneling resistance and / or tunneling resistivity of the tunneling passivation layer are determined according to the detection resistance, the preset relationship corresponding to the detection resistance, and the preset resistance, thereby realizing rapid and accurate testing of the tunneling resistance and / or tunneling resistivity of the preform battery, thereby solving the problem in the related art that the tunneling resistance and / or tunneling resistivity of the solar cell cannot be detected rapidly and accurately.

[0039] It is understandable that, in some embodiments, before step S201, the method further includes: obtaining structural information of the preform battery; and determining a plurality of detection methods and a plurality of preset relationships corresponding to the plurality of the above detection methods based on the above structural information.

[0040] By adding the above steps, it is possible to automatically determine which detection system to use for testing, thereby improving the automation level of the entire testing method and thus improving the detection efficiency. The above prefabricated battery may be a semi-finished battery cell or a finished battery cell.

[0041] In some optional embodiments, such as Figure 3 and Figure 4As shown, the detection systems corresponding to the plurality of the detection methods are controlled to detect the preform battery to obtain a plurality of detection resistors corresponding to the plurality of the preset relationships, including: in the case where the structural information includes that the film layers located on both sides of the preform battery are the first doping layer 10 and the substrate 20, respectively, the first detection system 40 is controlled to detect the first doping layer 10 and the substrate 20 using the first detection method to obtain the first detection resistor, the first detection method having a corresponding first preset relationship, the first preset relationship including: the relationship between the first detection resistor, the resistance of the first doping layer 10, the tunneling resistance and the resistance of the substrate 20; the second detection system 50 is controlled to detect the first doping layer 10 and the substrate 20 using the first detection method to obtain the first detection resistor; the second detection system 50 is controlled to detect the first doping layer 10 and the substrate 20 using the first detection method to obtain the first detection resistor; the second detection system 50 is controlled to detect the first doping layer 10 and the substrate 20 using the first detection method to obtain the first detection resistor; the first doping layer 10 and the substrate 20 have a corresponding first preset relationship ... first doping layer 10 and the substrate 20 have a corresponding first preset relationship; the second detection system 50 is controlled to detect the first doping layer 10 and the substrate 20 using the first detection method to obtain the first detection resistor; the first doping layer 10 and the substrate 20 have a corresponding first preset relationship; The first doping layer 10 and the substrate 20 are detected by a second detection method to obtain a second detection resistance, or the third detection system 60 is controlled to detect the preform battery by a third detection method to obtain a third detection resistance. The second detection method has a corresponding second preset relationship, and the third detection method has a corresponding third preset relationship. The first doping layer 10 and the substrate 20 have the same polarity. The second preset relationship includes: the relationship between the second detection resistance, the resistance of the first doping layer 10 and the resistance of the substrate 20. The third preset relationship includes: the relationship between the third detection resistance, the resistance of the first doping layer 10 and the resistance of the substrate 20.

[0042] In the above optional implementation, if Figure 3 As shown, the tunnel passivation layer 30 is located between the first doping layer 10 and the substrate 20, the first detection system 40 can be a four-probe detection system, the second detection system 50 can be a junction photovoltage detection system, and the third detection system 60 can be an eddy current detection system. When the structural information of the preform battery is detected that the film layers on both sides are the first doping layer 10 and the substrate 20, that is, a single-sided homopolar diffusion battery cell, the four-probe detection system and the junction photovoltage detection system can be used for detection: the junction photovoltage detection system is controlled to use the junction photovoltage method to perform resistance detection on the first doping layer 10 and the substrate 20 of the preform battery to obtain a second detection resistance, and the second preset relationship used by the junction photovoltage method is 1 / R JPV =1 / R N+ +1 / R bulk , the second detection resistor is R JPV ; Control the four-probe detection system to use the four-probe method to detect the resistance of the first doping layer 10 and the substrate 20 of the preform battery to obtain a first detection resistance. The first preset relationship used by the four-probe method is 1 / R 4pp =1 / R N+ +1 / (2R tun +R bulk ), the first detection resistor is R 4pp , where RN+ is the resistance of the first doped layer 10, R tun is the resistance of the tunnel passivation layer 30 (tunnel resistance), R bulk is the resistance of the substrate 20, where R bulk It can be detected by four-probe method.

[0043] In the above optional implementation, if Figure 4 As shown, the tunnel passivation layer 30 is located between the first doping layer 10 and the substrate 20, and can also be detected by a four-probe detection system (first detection system 40) and an eddy current detection system (third detection system 60): the eddy current detection system is controlled to use the eddy current detection method to perform resistance detection on the first doping layer 10 and the substrate 20 of the preform battery to obtain a third detection resistance. The third preset relationship used by the eddy current detection method is 1 / R edd =1 / R N+ +1 / R bulk , the third detection resistor is R edd ; Control the four-probe detection system to use the four-probe method to detect the resistance of the first doping layer 10 and the substrate 20 of the preform battery to obtain a first detection resistance. The first preset relationship used by the four-probe method is 1 / R 4pp =1 / R N+ +1 / (2R tun +R bulk ), the first detection resistor is R 4pp .

[0044] In some optional embodiments, the tunneling resistance and / or tunneling resistivity of the tunneling passivation layer is determined according to the detection resistance, the preset relationship corresponding to the detection resistance, and the preset resistance, including: when controlling the second detection system to adopt the second detection method to detect the first doped layer and the substrate, determining the resistance of the first doped layer according to the second detection resistance and the second preset relationship; when controlling the third detection system to adopt the third detection method to detect the first doped layer and the substrate, determining the resistance of the first doped layer according to the third detection resistance and the third preset relationship; determining the tunneling resistance and / or tunneling resistivity of the tunneling passivation layer according to the resistance of the first doped layer, the first detection resistance and the first preset relationship.

[0045] In the above optional implementation, if Figure 3 As shown, the first preset relationship and the second preset relationship are adopted, and according to the first detection resistor R 4pp The second detection resistor is R JPV , the resistance of the first doped layer R N+ and the substrate resistance R bulk The tunnel resistance R can be obtainedtun , where the substrate resistance R bulk is a known quantity.

[0046] In the above optional implementation, if Figure 4 As shown, the first preset relationship and the third preset relationship are adopted, and according to the first detection resistor R 4pp , the third detection resistor is R edd , the resistance of the first doped layer R N+ and the substrate resistance R bulk The tunnel resistance R can be obtained tun , where the substrate resistance R bulk is a known quantity. After the tunnel resistance is obtained by the above test method, the tunnel resistivity can be calculated based on the tunnel resistance. For example, the tunnel resistivity is equal to the tunnel resistance multiplied by the area of ​​the cell (the front area or the back area of ​​the cell).

[0047] In some optional embodiments, such as Figure 5 As shown, the detection systems corresponding to the above-mentioned detection methods are controlled to detect the above-mentioned preform battery to obtain multiple detection resistors corresponding to the above-mentioned preset relationships, including: when the above-mentioned structural information includes that the film layers located on both sides of the above-mentioned preform battery are respectively the above-mentioned first doping layer 10 and the second doping layer 70, the second detection system 50 is controlled to use the second detection method to detect the above-mentioned first doping layer 10 and the above-mentioned substrate 20 to obtain a second detection resistance, the above-mentioned second detection method has a corresponding second preset relationship, the above-mentioned first doping layer 10 and the above-mentioned substrate 20 have the same polarity, and the above-mentioned second preset relationship includes: the relationship between the above-mentioned second detection resistance, the resistance of the above-mentioned first doping layer 10 and the resistance of the above-mentioned substrate 20; the first detection system 40 is controlled to use the first detection method to detect the above-mentioned first doping layer 10 and the above-mentioned substrate 20 to obtain a first detection resistance, the above-mentioned first detection method has a corresponding first preset relationship, and the above-mentioned first preset relationship includes: the relationship between the above-mentioned first detection resistance, the resistance of the above-mentioned first doping layer 10, the above-mentioned tunneling resistance and the resistance of the above-mentioned substrate 20.

[0048] In the above optional implementation, if Figure 5 As shown, the tunnel passivation layer 30 is located between the first doping layer 10 and the substrate 20. When the structural information of the preform battery is detected that the film layers on both sides are the first doping layer 10 and the second doping layer 70, that is, the battery sheet with different polarities diffused on both sides, a four-probe detection system and a junction photovoltage detection system can be used for detection: the junction photovoltage detection system (the second detection system 50) is controlled to use the junction photovoltage method to perform resistance detection on the first doping layer 10 and the substrate 20 of the preform battery to obtain a second detection resistance. The second preset relationship used by the junction photovoltage method is 1 / RJPV =1 / R N+ +1 / R bulk , the second detection resistor is R JPV ; Control the four-probe detection system (first detection system 40) to use the four-probe method to detect the resistance of the first doping layer 10 and the substrate 20 of the preform battery to obtain a first detection resistance. The first preset relationship used by the four-probe method is 1 / R 4pp =1 / R N+ +1 / (2R tun +R bulk ), the first detection resistor is R 4pp , where R N+ is the resistance of the first doped layer 10, R tun is the resistance of the tunnel passivation layer 30 (tunnel resistance), R bulk is the resistance of the substrate 20. After the tunneling resistance is obtained by the above test method, the tunneling resistivity can be calculated based on the tunneling resistance.

[0049] In some optional embodiments, the tunneling resistance and / or tunneling resistivity of the tunneling passivation layer is determined according to the detection resistance, the preset relationship corresponding to the detection resistance and the preset resistance, including: determining the resistance of the first doped layer according to the second detection resistance and the second preset relationship; determining the tunneling resistance and / or tunneling resistivity of the tunneling passivation layer according to the resistance of the first doped layer, the first detection resistance and the first preset relationship.

[0050] In the above optional implementation, if Figure 5 As shown, the first preset relationship and the second preset relationship are adopted, and according to the first detection resistor R 4pp The second detection resistor is R JPV , the resistance of the first doped layer R N+ and the substrate resistance R bulk The tunnel resistance R can be obtained tun , where the substrate resistance R bulk After the tunnel resistance is obtained by the above test method, the tunnel resistivity can be calculated based on the tunnel resistance.

[0051] In some optional embodiments, such as Figure 6 and Figure 7As shown, the detection systems corresponding to the plurality of the detection methods are controlled to detect the preform battery to obtain a plurality of detection resistors corresponding to the plurality of the preset relationships, including: in the case where the structural information includes that the film layers on both sides of the preform battery are the first doping layer 10 and the second doping layer 70, respectively, the first detection system 40 is controlled to detect the second doping layer 70 using the first detection method to obtain a first sub-detection resistor, or the second detection system 50 is controlled to detect the second doping layer 70 using the second detection method to obtain a second detection resistor, the first detection method has a corresponding fourth preset relationship, the fourth preset relationship includes a first sub-preset relationship and a second sub-preset relationship, the first sub-preset relationship includes: a relationship between the first sub-detection resistor and the resistance of the second doping layer 70, the second sub-preset relationship includes The method comprises: a relationship among the second sub-detection resistance, the resistance of the first doped layer 10, the tunneling resistance and the resistance of the substrate 20, the second detection method having a corresponding fifth preset relationship, and the fifth preset relationship including: a relationship among the second detection resistance, the resistance of the second doped layer 70 and the resistance of the first doped layer 10; controlling the third detection system 60 to detect the preform battery using the third detection method to obtain a third detection resistance, and the third detection method has a corresponding sixth preset relationship, and the sixth preset relationship including: a relationship among the third detection resistance, the resistance of the first doped layer 10, the resistance of the second doped layer 70 and the resistance of the substrate 20; controlling the first detection system 40 to detect the first doped layer 10 and the substrate 20 using the first detection method to obtain a second sub-detection resistance.

[0052] In the above optional implementation, if Figure 6 As shown, the tunnel passivation layer 30 is located between the first doping layer 10 and the substrate 20. When the structural information of the preform battery is detected that the film layers located on both sides are the first doping layer 10 and the second doping layer 70, that is, the battery sheet with double-sided diffusion of different polarities, the four-probe detection system (first detection system 40) and the eddy current detection system (third detection system 60) can be used for detection: the four-probe detection system is controlled to use the four-probe detection method to perform resistance detection on the second doping layer 70 of the preform battery to obtain a first sub-detection resistance. The first sub-preset relationship used by the four-probe detection method is 1 / R 4pp =1 / R P+ , the first sub-sense resistor is R 4pp ; Control the eddy current detection system to use the eddy current detection method to detect the resistance of the first doping layer 10, the substrate 20 and the second doping layer 70 of the preform battery to obtain a third detection resistance. The sixth preset relationship used by the eddy current detection method is 1 / R edd =1 / R N+ +1 / Rbulk +1 / R P+ , the third detection resistor is R edd Then, the four-probe detection system is controlled to detect the resistance of the first doped layer 10 and the substrate 20 using the four-probe detection method. The four-probe detection method has a second sub-preset relationship when detecting the resistance of the first doped layer 10 and the substrate 20, and the second sub-detection resistance R is obtained. 4pp , the second sub-preset relationship is consistent with the first preset relationship. N+ is the resistance of the first doped layer 10, R P+ is the resistance of the second doped layer 70, R bulk is the resistance of the substrate 20. The first four-probe detection method is to detect the resistance of the second doping layer 70 of the preform battery, and the second four-probe detection method is to detect the resistance of the first doping layer 10 and the substrate 20.

[0053] In the above optional implementation, if Figure 7 As shown, the tunnel passivation layer 30 is located between the first doped layer 10 and the substrate 20, and can also be detected by a junction photovoltage detection system and an eddy current detection system: the junction photovoltage detection system (the second detection system 50) is controlled to use a junction photovoltage method to perform resistance detection on the second doped layer 70 of the preform battery to obtain a second detection resistance. The fifth preset relationship used by the junction photovoltage method is 1 / R JPV =1 / R bulk +1 / R P+ , the second detection resistor is R JPV ; Control the eddy current detection system (third detection system 60) to use the eddy current detection method to detect the resistance of the first doping layer 10, the substrate 20 and the second doping layer 70 of the preform battery to obtain a third detection resistance. The sixth preset relationship used by the eddy current detection method is 1 / R edd =1 / R N+ +1 / R bulk +1 / R P+ , the third detection resistor is R edd Then, the four-probe detection system (first detection system 40) is controlled to detect the resistance of the first doped layer 10 and the substrate 20 using the four-probe detection method. The four-probe detection method has a second sub-preset relationship when detecting the resistance of the first doped layer 10 and the substrate 20, and the second sub-detection resistance R is obtained. 4pp , the second sub-preset relationship is consistent with the first preset relationship. N+ is the resistance of the first doped layer 10, R P+ is the resistance of the second doped layer 70, R bulk is the resistance of the substrate 20. After the tunneling resistance is obtained by the above test method, the tunneling resistivity can be calculated based on the tunneling resistance.

[0054] Figures 3 to 7 The third detection system 60 includes an eddy current sensor 61 and a coil 62. The eddy current sensor 61 is a sensor for inducing eddy currents, and is usually composed of a coil and a magnetic core. When a high-frequency current passes through the coil 62, an alternating magnetic field is generated around the sensor. When the eddy current sensor 61 is close to the preform battery, the magnetic field will induce eddy currents. According to the size and frequency of the eddy currents, the resistance of the object to be tested can be inferred. Figure 3 and Figure 6 The second detection system 50 includes a light source 51 and a capacitor electrode 52. The light source 51 provides light. When photons excite electrons and release them into the capacitor electrode 52, a voltage signal is generated on the capacitor electrode 52. By measuring the magnitude of this voltage signal, the resistance of the object to be tested can be determined.

[0055] In some optional embodiments, the tunneling resistance and / or tunneling resistivity of the tunneling passivation layer is determined according to the detection resistance, the preset relationship corresponding to the detection resistance, and the preset resistance, including: when the first detection system is controlled to use the first detection method to detect the second doped layer to obtain the first detection resistance, the resistance of the first doped layer is determined according to the first sub-detection resistance, the third detection resistance, the first sub-preset relationship, and the sixth preset relationship; when the second detection system is controlled to use the second detection method to detect the second doped layer to obtain the second detection resistance, the resistance of the first doped layer is determined according to the second detection resistance, the third detection resistance, the fifth preset relationship, and the sixth preset relationship; the tunneling resistance and / or tunneling resistivity of the tunneling passivation layer is determined according to the resistance of the first doped layer, the second sub-detection resistance, and the second sub-preset relationship.

[0056] In the above optional implementation, if Figure 6 As shown, the first sub-preset relationship and the sixth preset relationship are adopted, and according to the first sub-detection resistor R 4pp , the third detection resistor is R edd , the resistance of the substrate R bulk and the resistance R of the second doped layer P+ , and the resistance R of the first doped layer is obtained N+ ; Then according to the resistance R of the first doping layer N+ , the second sub-preset relationship, the resistance R of the substrate bulk and the second sub-sense resistor R 4pp , we can get the tunnel resistance R tun , where the substrate resistance R bulk is a known quantity.

[0057] In the above optional implementation, if Figure 7 As shown, the fifth preset relationship and the sixth preset relationship are adopted, and according to the second detection resistor RJPV The third detection resistor is R edd , the resistance of the substrate R bulk and the resistance R of the second doped layer P+ , and the resistance R of the first doped layer is obtained N+ ; Then according to the resistance R of the first doping layer N+ , the second sub-preset relationship, the resistance R of the substrate bulk and the second sub-sense resistor R 4pp , we can get the tunnel resistance R tun , where the substrate resistance R bulk After the tunnel resistance is obtained by the above test method, the tunnel resistivity can be calculated based on the tunnel resistance.

[0058] It should be noted that the above embodiment is illustrated by the substrate being N-type, the first doping layer being N+ type, and the second doping layer being P+. The doping types of the above layers may also be opposite, that is, the substrate is P, the first doping layer is P+, and the second doping layer is N+. In this case, when testing the structure, it is only necessary to replace N+ with P+ and P+ with N+ in the formula of the above preset relationship.

[0059] The technical solution of the present application can realize offline or online rapid tunneling resistance test and analysis of solar cells, and can be used for full back electrode contact cells with main grid-free technology (0BB, Zero Busbar) or multi-main grid technology (MBB, MULTI-BUSBAR), full back electrode contact cells including (IBC, Interdigitated back contact), full back contact cells (ABC, Allback contact), composite passivated back contact cells (HPBC, Hybrid Passivated back contact), emitter back passivated cells (PERC, Passivated Emitter and Rear Cell), tunneling oxide passivated contact cells (TOPcon, Tnuuel Oxide Passivated contact), TOPcon-IBC cells, crystalline silicon heterojunction solar cells (HJT, Heterojunction with Intrinsic Thin-layer), perovskite stacked cells, flexible cells and other photovoltaic cells. The tunneling resistance or other arbitrary thin layer resistance test.

[0060] According to another aspect of the present application, Figure 8As shown, a testing device is provided, including: a control module 100, used to control the detection system corresponding to multiple detection methods to detect the preform battery, and obtain multiple detection resistors corresponding to multiple preset relationships, wherein the structural information of the preform battery includes one of the following: the film layers located on both sides of the preform battery are respectively the first doping layer and the substrate, and the film layers located on both sides of the preform battery are respectively the first doping layer and the second doping layer, wherein the first doping layer is located on the side of the tunneling passivation layer in the preform battery away from the substrate, and the second doping layer is located on the side of the substrate away from the tunneling passivation layer, the first doping layer and the second doping layer have different polarities, and the first doping layer and the substrate have the same doping polarity; the detection resistance satisfies the corresponding preset relationship with at least one of the following target resistances: the resistance of the first doping layer, the resistance of the second doping layer, and the resistance of the substrate; a first determination module 200, used to determine the tunneling resistivity of the tunneling passivation layer according to the detection resistance, the preset relationship corresponding to the detection resistance, and the preset resistance, and the preset resistance includes the resistance of the substrate.

[0061] The test device of the present application controls the detection system corresponding to the above-mentioned detection method through a control module to detect the preform battery. The resistance obtained by the detection has a corresponding relationship with the above-mentioned preset relationship. The first determination module determines the tunneling resistance and / or tunneling resistivity of the tunnel passivation layer according to the detection resistance, the preset relationship corresponding to the detection resistance and the preset resistance, thereby realizing rapid and accurate testing of the tunneling resistance and / or tunneling resistivity of the preform battery, solving the problem in the related art that the tunneling resistance and / or tunneling resistivity of the solar cell cannot be detected rapidly and accurately.

[0062] In some optional embodiments, the testing device further includes an acquisition module and a second determination module, wherein the acquisition module is used to acquire structural information of the preform battery; the second determination module is used to determine multiple detection methods and multiple preset relationships corresponding to the multiple detection methods based on the structural information.

[0063] In some optional embodiments, the control module includes a first sub-control module and a second sub-control module, the first sub-control module is used to control the first detection system to detect the first doped layer and the substrate using a first detection method to obtain a first detection resistance when the above-mentioned structural information includes that the film layers located on both sides of the above-mentioned preform battery are respectively the first doped layer and the substrate, and the above-mentioned first detection method has a corresponding first preset relationship, and the above-mentioned first preset relationship includes: the relationship between the above-mentioned first detection resistance, the resistance of the above-mentioned first doped layer, the above-mentioned tunneling resistance and the resistance of the above-mentioned substrate; the second sub-control module is used to control the second detection system to detect the above-mentioned first doped layer and the above-mentioned substrate using a second detection method to obtain a second detection resistance, or control the third detection system to detect the above-mentioned preform battery using a third detection method to obtain a third detection resistance, the above-mentioned second detection method has a corresponding second preset relationship, the above-mentioned third detection method has a corresponding third preset relationship, the above-mentioned first doped layer and the above-mentioned substrate have the same polarity, the above-mentioned second preset relationship includes: the relationship between the above-mentioned second detection resistance, the resistance of the above-mentioned first doped layer and the resistance of the above-mentioned substrate, and the above-mentioned third preset relationship includes: the relationship between the above-mentioned third detection resistance, the resistance of the above-mentioned first doped layer and the resistance of the above-mentioned substrate.

[0064] In some optional embodiments, the control module includes a third sub-control module and a fourth sub-control module, and the third sub-control module is used to control the second detection system to detect the first doped layer and the substrate using a second detection method to obtain a second detection resistance when the above-mentioned structural information includes that the film layers located on both sides of the above-mentioned preform battery are respectively the above-mentioned first doped layer and the second doped layer, and the above-mentioned second detection method has a corresponding second preset relationship, and the above-mentioned first doped layer and the above-mentioned substrate have the same polarity, and the above-mentioned second preset relationship includes: the relationship between the above-mentioned second detection resistance, the resistance of the above-mentioned first doped layer and the resistance of the above-mentioned substrate; the fourth sub-control module is used to control the first detection system to detect the above-mentioned first doped layer and the above-mentioned substrate using the first detection method to obtain the first detection resistance, and the above-mentioned first detection method has a corresponding first preset relationship, and the above-mentioned first preset relationship includes: the relationship between the above-mentioned first detection resistance, the resistance of the above-mentioned first doped layer, the above-mentioned tunneling resistance and the resistance of the above-mentioned substrate.

[0065] In some optional embodiments, the control module includes a fifth sub-control module, a sixth sub-control module and a seventh sub-control module, and the fifth sub-control module is used to control the first detection system to use the first detection method to detect the second doped layer to obtain the first sub-detection resistance, or control the second detection system to use the second detection method to detect the second doped layer to obtain the second detection resistance when the above-mentioned structural information includes that the film layers on both sides of the above-mentioned preform battery are respectively the above-mentioned first doped layer and the second doped layer, and the above-mentioned first detection method has a corresponding fourth preset relationship, and the above-mentioned fourth preset relationship includes a first sub-preset relationship and a second sub-preset relationship, and the above-mentioned first sub-preset relationship includes: the relationship between the above-mentioned first sub-detection resistance and the resistance of the above-mentioned second doped layer, and the above-mentioned second sub-preset relationship includes: the relationship between the above-mentioned second sub-detection resistance and the resistance of the above-mentioned second doped layer The sixth sub-control module controls the third detection system to detect the preform battery using the third detection method to obtain a third detection resistance, and the third detection method has a corresponding sixth preset relationship, and the sixth preset relationship includes: the relationship between the third detection resistance, the resistance of the first doped layer, the resistance of the second doped layer and the resistance of the substrate; the seventh sub-control module is used to control the first detection system to detect the first doped layer and the substrate using the first detection method to obtain a second sub-detection resistance.

[0066] In some optional embodiments, the first determination module includes a first sub-determination module, a second sub-determination module and a third sub-determination module, the first sub-determination module is used to determine the resistance of the first doped layer according to the second detection resistance and the second preset relationship when controlling the second detection system to adopt the second detection method to detect the first doped layer and the substrate; the second sub-determination module is used to determine the resistance of the first doped layer according to the third detection resistance and the third preset relationship when controlling the third detection system to adopt the third detection method to detect the first doped layer and the substrate; the third sub-determination module is used to determine the tunneling resistivity of the tunneling passivation layer according to the resistance of the first doped layer, the first detection resistance and the first preset relationship.

[0067] In some optional embodiments, the first determination module includes a fourth sub-determination module and a fifth sub-determination module, the fourth sub-determination module is used to determine the resistance of the first doped layer based on the second detection resistance and the second preset relationship; the fifth sub-determination module is used to determine the tunneling resistivity of the tunneling passivation layer based on the resistance of the first doped layer, the first detection resistance and the first preset relationship.

[0068] In some optional embodiments, the first determination module includes a sixth sub-determination module and a seventh sub-determination module, the sixth sub-determination module is used to determine the resistance of the first doped layer based on the first sub-detection resistance, the third detection resistance, the first sub-preset relationship and the sixth preset relationship, or based on the second detection resistance, the third detection resistance, the fifth preset relationship and the sixth preset relationship; the seventh sub-determination module is used to determine the tunneling resistivity of the tunneling passivation layer based on the resistance of the first doped layer, the second sub-detection resistance and the second sub-preset relationship.

[0069] According to another aspect of the present application, a computer-readable storage medium is provided, wherein the computer-readable storage medium includes a stored program, wherein when the program is executed, the device where the computer-readable storage medium is located is controlled to execute the test method.

[0070] Specifically, the test methods include:

[0071] Step S201: Control the detection systems corresponding to the above-mentioned detection methods to detect the above-mentioned preform battery, and obtain multiple detection resistors corresponding to the above-mentioned preset relationships, wherein the structural information of the preform battery includes one of the following: the film layers located on both sides of the preform battery are respectively the first doping layer and the substrate, and the film layers located on both sides of the preform battery are respectively the first doping layer and the second doping layer, wherein the first doping layer is located on the side of the tunneling passivation layer in the preform battery away from the substrate, and the second doping layer is located on the side of the substrate away from the tunneling passivation layer, the first doping layer and the second doping layer have different polarities, and the first doping layer and the substrate have the same doping polarity; the above-mentioned detection resistor satisfies the corresponding preset relationship with at least one of the following target resistors: the resistance of the above-mentioned first doping layer, the resistance of the above-mentioned second doping layer, and the resistance of the above-mentioned substrate;

[0072] Step S202: determining the tunneling resistance and / or tunneling resistivity of the tunneling passivation layer according to the detection resistance, the preset relationship corresponding to the detection resistance, and the preset resistance, wherein the preset resistance includes the resistance of the substrate.

[0073] According to another aspect of the present application, an electronic device is provided, comprising: one or more processors, a memory, and one or more programs, wherein the one or more programs are stored in the memory and are configured to be executed by the one or more processors, and the one or more programs include a method for executing the above-mentioned test method.

[0074] Specifically, the test methods include:

[0075] Step S201: Control the detection systems corresponding to the above-mentioned detection methods to detect the above-mentioned preform battery, and obtain multiple detection resistors corresponding to the above-mentioned preset relationships, wherein the structural information of the preform battery includes one of the following: the film layers located on both sides of the preform battery are respectively the first doping layer and the substrate, and the film layers located on both sides of the preform battery are respectively the first doping layer and the second doping layer, wherein the first doping layer is located on the side of the tunneling passivation layer in the preform battery away from the substrate, and the second doping layer is located on the side of the substrate away from the tunneling passivation layer, the first doping layer and the second doping layer have different polarities, and the first doping layer and the substrate have the same doping polarity; the above-mentioned detection resistor satisfies the corresponding preset relationship with at least one of the following target resistors: the resistance of the above-mentioned first doping layer, the resistance of the above-mentioned second doping layer, and the resistance of the above-mentioned substrate;

[0076] Step S202: determining the tunneling resistance and / or tunneling resistivity of the tunneling passivation layer according to the detection resistance, the preset relationship corresponding to the detection resistance, and the preset resistance, wherein the preset resistance includes the resistance of the substrate.

[0077] Obviously, those skilled in the art should understand that the above modules or steps of the present invention can be implemented by a general computing device, they can be concentrated on a single computing device, or distributed on a network composed of multiple computing devices, they can be implemented by a program code executable by a computing device, so that they can be stored in a storage device and executed by the computing device, and in some cases, the steps shown or described can be executed in a different order than here, or they can be made into individual integrated circuit modules, or multiple modules or steps therein can be made into a single integrated circuit module for implementation. Thus, the present invention is not limited to any specific combination of hardware and software.

[0078] Those skilled in the art will appreciate that the embodiments of the present application may be provided as methods, systems, or computer program products. Therefore, the present application may adopt the form of a complete hardware embodiment, a complete software embodiment, or an embodiment in combination with software and hardware. Moreover, the present application may adopt the form of a computer program product implemented in one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) that include computer-usable program code.

[0079] The present application is described with reference to the flowcharts and / or block diagrams of the methods, devices (systems), and computer program products according to the embodiments of the present application. It should be understood that each process and / or box in the flowchart and / or block diagram, as well as the combination of the processes and / or boxes in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to generate a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0080] These computer program instructions may also be stored in a computer-readable memory capable of directing a computer or other programmable data processing device to operate in a specific manner, so that the instructions stored in the computer-readable memory produce an article of manufacture comprising an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.

[0081] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operating steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing instructions for implementing the process. Figure 1 A process or multiple processes and / or boxes Figure 1 A step that specifies a function in one or more boxes.

[0082] In a typical configuration, a computing device includes one or more processors (CPU), input / output interfaces, network interfaces, and memory.

[0083] The memory may include non-permanent memory in a computer-readable medium, random access memory (RAM) and / or non-volatile memory in the form of read-only memory (ROM) or flash RAM. The memory is an example of a computer-readable medium.

[0084] Computer readable media include permanent and non-permanent, removable and non-removable media that can be implemented by any method or technology to store information. Information can be computer readable instructions, data structures, program modules or other data. Examples of computer storage media include, but are not limited to, phase change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technology, compact disk read-only memory (CD-ROM), digital versatile disk (DVD) or other optical storage, magnetic cassettes, magnetic disk storage or other magnetic storage devices or any other non-transmission media that can be used to store information that can be accessed by a computing device. As defined herein, computer readable media does not include temporary computer readable media (transitory media), such as modulated data signals and carrier waves.

[0085] It should also be noted that the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, commodity or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, commodity or device. In the absence of more restrictions, the elements defined by the sentence "comprises a ..." do not exclude the existence of other identical elements in the process, method, commodity or device including the elements.

[0086] From the above description, it can be seen that the above embodiments of the present application achieve the following technical effects:

[0087] 1) The testing method of the present application detects the preform battery by controlling the detection system corresponding to the above-mentioned detection method. The resistance obtained by the detection has a corresponding relationship with the above-mentioned preset relationship. The tunneling resistance and / or tunneling resistivity of the tunneling passivation layer are determined according to the detection resistance, the preset relationship corresponding to the detection resistance and the preset resistance, thereby realizing rapid and accurate testing of the tunneling resistance and / or tunneling resistivity of the preform battery, solving the problem in the related art that the tunneling resistance and / or tunneling resistivity of the solar cell cannot be detected rapidly and accurately.

[0088] 2) The test device of the present application controls the detection system corresponding to the above-mentioned detection method through a control module to detect the preform battery. The resistance obtained by the detection has a corresponding relationship with the above-mentioned preset relationship. The first determination module determines the tunneling resistance and / or tunneling resistivity of the tunnel passivation layer according to the detection resistance, the preset relationship corresponding to the detection resistance and the preset resistance, thereby realizing rapid and accurate testing of the tunneling resistance and / or tunneling resistivity of the preform battery, solving the problem in the related art that the tunneling resistance and / or tunneling resistivity of the solar cell cannot be detected quickly and accurately.

[0089] The above are only preferred embodiments of the present application and are not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A testing method, characterized in that: include: Controlling a detection system corresponding to a plurality of detection methods to detect a preform battery, and obtaining a plurality of detection resistors corresponding to a plurality of preset relationships, wherein the structural information of the preform battery includes one of the following: the film layers located on both sides of the preform battery are respectively a first doping layer and a substrate, and the film layers located on both sides of the preform battery are respectively the first doping layer and the second doping layer, wherein the first doping layer is located on a side of the tunneling passivation layer in the preform battery away from the substrate, and the second doping layer is located on a side of the substrate away from the tunneling passivation layer, the first doping layer and the second doping layer have different polarities, the first doping layer and the substrate have the same doping polarity, and the detection resistor satisfies a corresponding preset relationship with at least one of the following target resistors: the resistance of the first doping layer, the resistance of the second doping layer, and the resistance of the substrate; The tunneling resistance and / or the tunneling resistivity of the tunneling passivation layer is determined according to the detection resistance, the preset relationship corresponding to the detection resistance, and a preset resistance, wherein the preset resistance includes the resistance of the substrate.

2. The testing method according to claim 1, characterized in that: The method further comprises: Obtaining structural information of the prefabricated battery; According to the structural information, multiple detection methods and multiple preset relationships corresponding to the multiple detection methods are determined.

3. The testing method according to claim 1, characterized in that: The detection system corresponding to the control of the plurality of detection methods detects the prefabricated battery to obtain a plurality of detection resistors corresponding to a plurality of preset relationships, including: In a case where the structural information includes that the film layers on both sides of the preform battery are the first doping layer and the substrate respectively, controlling the first detection system to detect the first doping layer and the substrate using a first detection method to obtain a first detection resistance, the first detection method having a corresponding first preset relationship, the first preset relationship including: a relationship between the first detection resistance, the resistance of the first doping layer, the tunneling resistance, and the resistance of the substrate; Control the second detection system to use the second detection method to detect the first doping layer and the substrate to obtain a second detection resistance, or control the third detection system to use the third detection method to detect the preform battery to obtain a third detection resistance, the second detection method has a corresponding second preset relationship, the third detection method has a corresponding third preset relationship, the first doping layer and the substrate have the same polarity, the second preset relationship includes: the relationship between the second detection resistance, the resistance of the first doping layer and the resistance of the substrate, the third preset relationship includes: the relationship between the third detection resistance, the resistance of the first doping layer and the resistance of the substrate.

4. The testing method according to claim 1, characterized in that: The detection system corresponding to the control of the plurality of detection methods detects the prefabricated battery to obtain a plurality of detection resistors corresponding to a plurality of preset relationships, including: In the case where the structural information includes that the film layers on both sides of the preform battery are the first doping layer and the second doping layer respectively, the second detection system is controlled to detect the first doping layer and the substrate using a second detection method to obtain a second detection resistance, the second detection method has a corresponding second preset relationship, the first doping layer and the substrate have the same polarity, and the second preset relationship includes: a relationship between the second detection resistor, the resistance of the first doped layer and the resistance of the substrate; Control the first detection system to use a first detection method to detect the first doped layer and the substrate to obtain a first detection resistance. The first detection method has a corresponding first preset relationship, and the first preset relationship includes: the relationship between the first detection resistance, the resistance of the first doped layer, the tunneling resistance and the resistance of the substrate.

5. The testing method according to claim 1, characterized in that: The detection system corresponding to the control of the plurality of detection methods detects the prefabricated battery to obtain a plurality of detection resistors corresponding to a plurality of preset relationships, including: In the case where the structural information includes that the film layers located on both sides of the preform battery are respectively the first doping layer and the second doping layer, the first detection system is controlled to detect the second doping layer using a first detection method to obtain a first sub-detection resistance, or the second detection system is controlled to detect the second doping layer using a second detection method to obtain a second detection resistance, the first detection method has a corresponding fourth preset relationship, the fourth preset relationship includes a first sub-preset relationship and a second sub-preset relationship, the first sub-preset relationship includes: a relationship between the first sub-detection resistance and the resistance of the second doping layer, the second sub-preset relationship includes: a relationship between the second sub-detection resistance, the resistance of the first doping layer, the tunneling resistance and the resistance of the substrate, the second detection method has a corresponding fifth preset relationship, the fifth preset relationship includes: a relationship between the second detection resistance, the resistance of the second doping layer and the resistance of the first doping layer; Controlling the third detection system to detect the preform battery using a third detection method to obtain a third detection resistance, wherein the third detection method has a corresponding sixth preset relationship, and the sixth preset relationship includes: a relationship between the third detection resistance, the resistance of the first doping layer, the resistance of the second doping layer, and the resistance of the substrate; The first detection system is controlled to detect the first doping layer and the substrate using the first detection method to obtain the second sub-detection resistor.

6. The testing method according to claim 3, characterized in that: The determining the tunneling resistance and / or the tunneling resistivity of the tunneling passivation layer according to the detection resistance, the preset relationship corresponding to the detection resistance, and the preset resistance includes: Under the condition of controlling the second detection system to detect the first doped layer and the substrate using the second detection method, determining the resistance of the first doped layer according to the second detection resistance and the second preset relationship; Under the condition of controlling the third detection system to detect the first doped layer and the substrate using the third detection method, determining the resistance of the first doped layer according to the third detection resistance and the third preset relationship; The tunneling resistance and / or the tunneling resistivity of the tunneling passivation layer is determined according to the resistance of the first doping layer, the first detection resistance, and the first preset relationship.

7. The testing method according to claim 4, characterized in that: The determining the tunneling resistance and / or the tunneling resistivity of the tunneling passivation layer according to the detection resistance, the preset relationship corresponding to the detection resistance, and the preset resistance includes: determining the resistance of the first doping layer according to the second detection resistance and the second preset relationship; The tunneling resistance and / or the tunneling resistivity of the tunneling passivation layer is determined according to the resistance of the first doping layer, the first detection resistance and the first preset relationship.

8. The testing method according to claim 5, characterized in that: The determining the tunneling resistance and / or the tunneling resistivity of the tunneling passivation layer according to the detection resistance, the preset relationship corresponding to the detection resistance, and the preset resistance includes: When the first detection system is controlled to detect the second doped layer using the first detection method to obtain the first detection resistance, the resistance of the first doped layer is determined according to the first sub-detection resistance, the third detection resistance, the first sub-preset relationship and the sixth preset relationship; When controlling the second detection system to detect the second doped layer using the second detection method to obtain a second detection resistance, determining the resistance of the first doped layer according to the second detection resistance, the third detection resistance, the fifth preset relationship, and the sixth preset relationship; The tunneling resistance and / or the tunneling resistivity of the tunneling passivation layer is determined according to the resistance of the first doped layer, the second sub-detection resistance and the second sub-preset relationship.

9. A testing device, characterized in that: include: A control module, used for controlling a detection system corresponding to a plurality of detection methods to detect a preform battery, and obtaining a plurality of detection resistors corresponding to a plurality of preset relationships, wherein the structural information of the preform battery includes one of the following: the film layers located on both sides of the preform battery are respectively a first doping layer and a substrate, and the film layers located on both sides of the preform battery are respectively the first doping layer and the second doping layer, wherein the first doping layer is located on a side of the tunneling passivation layer in the preform battery away from the substrate, and the second doping layer is located on a side of the substrate away from the tunneling passivation layer, the first doping layer and the second doping layer have different polarities, and the first doping layer and the substrate have the same doping polarity; the detection resistor satisfies a corresponding preset relationship with at least one of the following target resistors: the resistance of the first doping layer, the resistance of the second doping layer, and the resistance of the substrate; The first determination module is used to determine the tunneling resistance and / or the tunneling resistivity of the tunneling passivation layer according to the detection resistance, the preset relationship corresponding to the detection resistance and a preset resistance, wherein the preset resistance includes the resistance of the substrate.

10. The testing device according to claim 9, characterized in that: Also includes: An acquisition module, used to acquire structural information of the prefabricated battery; The second determination module is used to determine multiple detection methods and multiple preset relationships corresponding to the multiple detection methods according to the structural information.

11. A computer-readable storage medium, characterized in that: The computer-readable storage medium includes a stored program, wherein when the program is executed, the device where the computer-readable storage medium is located is controlled to execute the test method of any one of claims 1 to 8.

12. An electronic device, characterized in that: include: One or more processors, a memory, and one or more programs, wherein the one or more programs are stored in the memory and are configured to be executed by the one or more processors, and the one or more programs include a method for executing the test method of any one of claims 1 to 8.

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