Wet chemical surface cleaning equipment

Abstract

The invention is suitable for the technical field of photovoltaic manufacturing, and provides wet chemical surface cleaning equipment which comprises a surface dehydration treatment module and a drying and surface gas treatment module which are connected in sequence, and the surface dehydration treatment module comprises a first acid pickling functional tank group and a slow lifting functional tank group which are arranged in sequence; the drying and surface gas treatment module comprises a drying function groove set and a surface gas treatment function groove set which are sequentially arranged. The drying and surface gas treatment module is arranged at the rear end of the surface dehydration treatment module, so that the silicon wafer subjected to surface dehydration enters a drying and surface treatment process, and pollution in the middle process is avoided. The silicon wafer is subjected to surface treatment in the surface gas treatment functional tank, dangling bonds on the surface of the silicon wafer are passivated, the interface state density is reduced, compounding is less, the environmental pollution resistance of the surface of the cleaned silicon wafer is improved, meanwhile, the flatness of the silicon wafer is improved, and the service life of the silicon wafer is prolonged. And the problem that bubbles are very easy to generate in the subsequent battery sintering process due to non-uniform growth of the subsequent passivation layer is solved.

Description

Technical Field

[0001] The invention belongs to the technical field of photovoltaic manufacturing, and in particular relates to a wet chemical surface cleaning device. Background Art

[0002] Silicon wafers need to be cleaned before deposition to remove surface contaminants.

[0003] Conventional wet chemical cleaning uses acid cleaning, alkaline cleaning and other methods to clean pollutants or impurities on the surface of silicon wafers. On the one hand, there is a high density of surface dangling bonds on the surface of the silicon wafer after cleaning. In the subsequent deposition of the passivation film layer, it cannot be fully saturated by the passivation film. There is still a high surface defect state density to form a recombination center, which causes some electron vacancy pairs excited on the battery surface to directly recombine, affecting the collection efficiency of electron-hole pairs. On the other hand, the surface of the silicon wafer has poor resistance to environmental pollution and is easy to absorb pollutants, causing secondary pollution. The surface flatness of the silicon wafer is poor, which is easy to cause uneven deposition during the subsequent deposition of the passivation film layer, which in turn leads to bubbles in the subsequent battery sintering process. Summary of the invention

[0004] The embodiment of the present invention provides a wet chemical surface cleaning device, which aims to solve the problems of high-density surface dangling bonds on the surface of a silicon wafer after cleaning, poor environmental pollution resistance, and poor surface flatness of the silicon wafer.

[0005] The embodiment of the present invention is implemented as follows: a wet chemical surface cleaning device includes a surface dehydration treatment module and a drying and surface gas treatment module;

[0006] The drying and surface gas treatment module is connected to the rear end of the surface dehydration treatment module;

[0007] The surface dehydration treatment module comprises a first pickling function slot group and a slow pulling function slot group arranged in sequence, wherein the first pickling function slot group comprises at least one first pickling function slot, and the slow pulling function slot group comprises at least one slow pulling function slot;

[0008] The drying and surface gas treatment module includes a drying function slot group and a surface gas treatment function slot group arranged in sequence, the drying function slot group includes at least one drying function slot, and the surface gas treatment function slot group includes at least one surface gas treatment function slot.

[0009] Optionally, the surface dehydration treatment module further includes a first water washing tank group, which is arranged between the first pickling functional tank group and the slow pulling functional tank group, and the first water washing tank group includes at least one first water washing tank.

[0010] Optionally, the surface gas treatment functional groove comprises a groove body, and a plurality of ventilation holes are arranged on the side wall of the groove body, and the ventilation holes are connected to the reaction gas source.

[0011] Optionally, a heating device is also provided in the tank body.

[0012] Optionally, it further comprises an acid treatment module, the rear end of which is connected to the surface dehydration treatment module, and the acid treatment module comprises a first ozone washing function tank group; and / or a second acid washing function tank group;

[0013] The first ozone washing function tank group includes at least one first ozone washing function tank;

[0014] The second pickling functional tank group includes at least one second pickling functional tank.

[0015] Optionally, the acid treatment module further includes a second water washing tank group, and / or a third water washing tank group;

[0016] The second water washing tank group is arranged after the first ozone washing tank group, and the second water washing tank group includes at least one second water washing tank;

[0017] The third water washing tank group is arranged after the second pickling functional tank group, and the third water washing tank group includes at least one third water washing tank.

[0018] Optionally, it further comprises an alkaline treatment module, the rear end of which is connected to the acidic treatment module, and the alkaline treatment module comprises an alkaline corrosion functional tank group and / or a first alkaline washing functional tank group;

[0019] The alkaline corrosion functional tank group includes at least one alkaline corrosion functional tank;

[0020] The first alkali washing functional tank group includes at least one first alkali washing functional tank.

[0021] Optionally, the alkaline treatment module further includes a fourth water washing tank group, and / or a fifth water washing tank group;

[0022] The fourth water washing tank group is arranged after the alkali corrosion functional tank group, and the fourth water washing tank group includes at least one fourth water washing tank;

[0023] The fifth water washing tank group is arranged after the first alkali washing functional tank group, and the fifth water washing tank group includes at least one fifth water washing tank.

[0024] Optionally, it further comprises a pretreatment module, the rear end of which is connected to the alkaline treatment module, and the pretreatment module comprises a second alkaline washing function tank group and / or a second ozone washing function tank group;

[0025] The second alkali washing functional tank group includes at least one second alkali washing functional tank;

[0026] The second ozone washing function tank group includes at least one second ozone washing function tank.

[0027] Optionally, the pretreatment module further includes a sixth water washing tank group, and / or a seventh water washing tank group;

[0028] The sixth water washing tank group is arranged after the second alkali washing functional tank group, and the sixth water washing tank group includes at least one sixth water washing tank;

[0029] The seventh water washing tank group is arranged after the second ozone washing function tank group, and the seventh water washing tank group includes at least one seventh water washing tank.

[0030] Optionally, a transport module is further included, wherein the transport module includes a motion unit and a carrier unit, wherein the carrier unit is used to load objects to be cleaned, and the motion unit is used to drive the carrier unit to move.

[0031] Optionally, the motion unit includes a track and a telescopic arm, the track passes through at least the surface dehydration treatment module and the drying and surface gas treatment module in sequence, the telescopic arm can be telescoped in a vertical direction, one end of the telescopic arm is connected to the carrier unit, and the other end is movably connected to the track.

[0032] The beneficial effect achieved by the present invention is that the drying and surface gas treatment modules are arranged at the rear end of the surface dehydration treatment module, so that the silicon wafer after surface dehydration enters the drying and surface treatment process, avoiding pollution in the intermediate process. The silicon wafer is surface treated in the surface gas treatment functional groove, the dangling bonds on the surface of the silicon wafer are passivated, the interface state density is reduced, the composite is reduced, and the environmental pollution resistance of the surface of the silicon wafer after cleaning is increased. At the same time, the flatness of the silicon wafer is improved, and the problem of bubbles that are very likely to occur in the subsequent battery sintering process due to uneven growth of the subsequent passivation layer is improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 It is a schematic diagram of the first structure of the wet chemical surface cleaning equipment provided by the present invention;

[0034] Figure 2 It is a schematic diagram of the second structure of the wet chemical surface cleaning equipment provided by the present invention;

[0035] Figure 3 It is a schematic diagram of the third structure of the wet chemical surface cleaning equipment provided by the present invention;

[0036] Figure 4 It is a schematic diagram of the fourth structure of the wet chemical surface cleaning equipment provided by the present invention;

[0037] Figure 5 It is a schematic diagram of the structure of the surface gas treatment functional groove provided by the present invention.

[0038] Description of reference numerals:

[0039] 100, wet chemical surface cleaning equipment; 110, surface dehydration treatment module; 111, first acid washing function tank group; 112, slow pulling function tank group; 113, first water washing tank; 120, drying and surface gas treatment module; 121, drying function tank group; 122, surface gas treatment function tank group; 1221, tank body; 1222, vent; 130, acid treatment module; 131, first ozone washing function tank group; 13 2. The second pickling function tank group; 133. The second water washing tank group; 134. The third water washing tank group; 140. The alkaline treatment module; 141. The alkaline corrosion function tank group; 142. The first alkaline washing function tank group; 143. The fourth water washing tank group; 144. The fifth water washing tank group; 150. The pretreatment module; 151. The second alkaline washing function tank group; 152. The second ozone washing function tank group; 153. The sixth water washing tank group; 154. The seventh water washing tank group. DETAILED DESCRIPTION

[0040] In order to make the purpose, technical scheme and advantages of the present invention clearer, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements with the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and should not be construed as limiting the present invention. In addition, it should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0041] In the description of the present invention, it is necessary to understand that the terms "length", "width", "up", "down", "left", "right", "horizontal", "top", "bottom", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0042] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0043] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or mutual communication; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0044] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0045] The disclosure below provides many different embodiments or examples to realize different structures of the present invention. In order to simplify the disclosure of the present invention, the parts and settings of specific examples are described below. Of course, they are only examples, and the purpose is not to limit the present invention. In addition, the present invention can repeat reference numbers and / or reference letters in different examples, and this repetition is for the purpose of simplification and clarity, which itself does not indicate the relationship between the various embodiments and / or settings discussed. In addition, the examples of various specific processes and materials provided by the present invention, but those of ordinary skill in the art can be aware of the application of other processes and / or the use of other materials.

[0046] The present invention sets a drying and surface gas treatment module at the rear end of the surface dehydration treatment module, so that the silicon wafer after surface dehydration enters the drying and surface treatment process, avoiding pollution in the intermediate process. The silicon wafer is surface treated in the surface gas treatment functional groove, the dangling bonds on the surface of the silicon wafer are passivated, the interface state density is reduced, the composite is reduced, and the environmental pollution resistance of the surface of the silicon wafer after cleaning is increased. At the same time, the problem of bubbles that are very likely to occur during the subsequent battery sintering process due to uneven growth of the passivation layer is improved.

[0047] Embodiment 1

[0048] This embodiment provides a wet chemical surface cleaning device 100, characterized in that it includes a surface dehydration treatment module 110 and a drying and surface gas treatment 120 module;

[0049] The drying and surface gas treatment 120 module is connected to the rear end of the surface dehydration treatment module 110;

[0050] The surface dehydration treatment module 110 includes a first pickling function tank group 111 and a slow pulling function tank group 112 arranged in sequence, wherein the first pickling function tank group 111 includes at least one first pickling function tank, and the slow pulling function tank group 112 includes at least one slow pulling function tank;

[0051] The drying and surface gas treatment 120 module includes a drying function slot group 121 and a surface gas treatment function slot group 122 which are arranged in sequence. The drying function slot group 121 includes at least one drying function slot, and the surface gas treatment function slot group 122 includes at least one surface gas treatment function slot.

[0052] The surface dehydration treatment module 110 is mainly responsible for removing moisture from the surface of the silicon wafer so that the subsequent cleaning process can be carried out more effectively. The module includes two main components: a first pickling function tank group 111 and a slow pulling function tank group 112. The first pickling function tank group 111 includes at least one first pickling function tank, which is used to perform preliminary chemical cleaning on the surface of the silicon wafer to remove organic matter, oxides and other pollutants on the surface. Pickling is to use an acidic solution to react chemically with pollutants on the surface of the silicon wafer to achieve the purpose of cleaning. The slow pulling function tank group 112 includes at least one slow pulling function tank, which is used to slowly pull the silicon wafer out of the cleaning solution after cleaning, reduce the amount of liquid, and further improve the cleaning effect. The slow pulling process can effectively avoid the dripping phenomenon caused by rapid pulling on the surface of the silicon wafer, thereby reducing the re-attachment of pollutants.

[0053] It can be understood that the first pickling function tank group 111 can include one first pickling function tank, or multiple first pickling function tanks. The multiple first pickling function tanks can be connected in series in sequence, or arranged in parallel, or in other arrangements. The specific arrangement is based on actual needs and is not limited here.

[0054] Similarly, the slow-pull function slot group 112 may include one slow-pull function slot or multiple slow-pull function slots. The multiple slow-pull function slots may be connected in series in sequence, or arranged in parallel, or in other arrangements. The arrangement is specific according to actual needs and is not limited here.

[0055] The drying and surface gas treatment 120 module is connected to the rear end of the surface dehydration treatment module 110, and mainly includes a drying function slot group 121 and a surface gas treatment function slot group 122. The drying function slot group 121 includes at least one drying function slot, which is used to completely remove the moisture on the surface of the silicon wafer to ensure that the silicon wafer is dry. The drying process can be achieved by hot air, infrared or other heating methods. The surface gas treatment function slot group 122 includes at least one surface gas treatment function slot, which is used to further treat the surface of the silicon wafer, such as surface passivation, gas adsorption, etc. This step can passivate the dangling bonds on the surface of the silicon wafer, reduce the interface state density, reduce recombination, increase the environmental pollution resistance of the surface of the silicon wafer after cleaning, and improve the flatness of the surface of the silicon wafer.

[0056] It can be understood that the drying function slot group 121 may include one drying function slot or multiple drying function slots. The multiple drying function slots may be connected in series in sequence, or arranged in parallel, or in other arrangements. The specific arrangement is based on actual needs and is not limited here.

[0057] Similarly, the surface gas treatment functional slot group 122 may include one surface gas treatment functional slot, or may include multiple surface gas treatment functional slots. The multiple surface gas treatment functional slots may be connected in series in sequence, or may be arranged in parallel, or may be arranged in other ways. The specific arrangement is based on actual needs and is not limited here.

[0058] This embodiment sets a drying and surface gas treatment 120 module at the rear end of the surface dehydration treatment module 110, so that the silicon wafer after surface dehydration enters the drying and surface treatment process to avoid contamination in the intermediate process. The silicon wafer is surface treated in the surface gas treatment functional tank, the dangling bonds on the surface of the silicon wafer are passivated, the interface state density is reduced, the composite is reduced, and the environmental pollution resistance of the surface of the silicon wafer after cleaning is increased. At the same time, the flatness of the silicon wafer is improved, and the problem of bubbles that are very likely to occur during the subsequent battery sintering process due to uneven growth of the subsequent passivation layer is improved.

[0059] Embodiment 2

[0060] In some embodiments, the surface dehydration treatment module 110 further includes a first water washing tank group 113, which is disposed between the first pickling functional tank group 111 and the slow pulling functional tank group 112, and includes at least one first water washing tank.

[0061] The surface dehydration treatment module 110 is sequentially provided with a first pickling function tank group 111, a first water washing tank group 113 and a slow pulling function tank group 112. The first water washing tank group 113 is arranged between the first pickling function tank group 111 and the slow pulling function tank group 112, and is used to clean the silicon wafer after pickling, and remove the acid solution remaining on the surface of the silicon wafer and other chemical substances generated during pickling.

[0062] It can be understood that the first water washing tank group 113 can include one first water washing tank, or multiple first water washing tanks. The multiple first water washing tanks can be connected in series in sequence, or arranged in parallel, or in other arrangements. The specific arrangement is based on actual needs and is not limited here.

[0063] In this embodiment, the provision of the first water washing tank group 113 can further ensure that the pollutants and residual chemicals on the surface of the silicon wafer are completely removed.

[0064] Embodiment 3

[0065] In some embodiments, the surface gas treatment functional slot includes a slot body 1221 , and a plurality of vents 1222 are disposed on the sidewall of the slot body 1221 , and the vents 1222 are connected to a reaction gas source.

[0066] The tank body 1221 is used to accommodate the silicon wafers to be processed. The side walls of the tank body 1221 are provided with a plurality of vents 1222. The number and distribution of these vents 1222 can be designed and adjusted according to the specific processing requirements. For example, the vents 1222 are evenly distributed on the side walls of the tank body 1221 to ensure that the reaction gas can evenly cover the surface of the silicon wafer. The vents 1222 are connected to the reaction gas source so that the reaction gas can smoothly enter the tank body 1221 and react with the surface of the silicon wafer. The reaction gas source can specifically be one or more of hydrogen fluoride, IPA (isopropyl alcohol) steam, water vapor, oxygen, ozone, nitrogen and the like. The specific gas type is selected according to the process requirements and is not limited here.

[0067] Specifically, the vent 1222 is connected to the reaction gas source through a pipeline, and the pipeline is usually made of corrosion-resistant materials to ensure the safety and reliability of the gas transmission process. The pipeline can also be provided with a valve to control the on-off and flow regulation of the gas, and the valve can be controlled manually or automatically to adapt to different treatment conditions. The pipeline can also be provided with a flow control device, a pressure control device, etc., which can control the flow, pressure and composition of the gas to ensure the stability and repeatability of the surface treatment process.

[0068] In this embodiment, the reaction gas enters the tank body 1221 through the vent 1222 and is evenly dispersed on the surface of the silicon wafer. The reaction gas reacts chemically with the dangling bonds on the surface of the silicon wafer to form a uniform passivation layer, which can optimize the passivation effect, reduce the number of dangling bonds, reduce the interface state density, and reduce recombination.

[0069] It is understandable that an exhaust port may also be provided on the tank body 1221, and the reacted gas is discharged through the exhaust port to ensure that a certain gas flow and freshness are maintained in the tank body 1221. The design of the exhaust port can prevent the reaction gas from accumulating in the tank body 1221 and reduce the occurrence of side reactions.

[0070] In some embodiments, a heating device (not shown) is further disposed in the tank body 1221 .

[0071] The heating device is arranged in the tank body 1221 to increase the temperature in the tank body 1221. Specifically, an electric heating element, such as a heating wire or a heating plate, can be arranged in the tank body 1221 to generate heat through electric current. An infrared heating lamp or an infrared heating tube can also be arranged to heat the surface of the silicon wafer by radiation to improve the heating efficiency and uniformity. A hot air generator can also be arranged to blow hot air into the tank body 1221 through the hot air generator to achieve uniform heating. Other heating devices can also be arranged, which are not limited here.

[0072] The heating device can be arranged at the bottom of the tank body 1221 to heat the silicon wafer through the bottom surface, which is suitable for processes that require uniform heating from the bottom. The heating device can also be arranged on the side wall of the tank body 1221, and cooperate with the design of the vent 1222 to ensure uniform temperature distribution in the tank body 1221. The heating device can also be arranged at the top of the tank body 1221 to heat the surface of the silicon wafer by radiation or convection, which is suitable for processes that require local surface heating. No limitation is made here.

[0073] In this embodiment, a heating device is provided to increase the temperature in the tank 1221 to ensure that the surface treatment can be performed at an appropriate temperature, thereby ensuring that the surface treatment is completed efficiently, uniformly and reliably.

[0074] In some embodiments, the reaction gas source can be an ozone gas source. Specifically, the ozone gas source includes an ozone generator and a water bath chamber, the water bath chamber is a closed cavity, the bottom of the accommodating chamber is connected to the gas outlet of the ozone generator through a pipe, and the ozone provided by the ozone generator is transported to the accommodating chamber through a pipe. The pipeline is connected to the bottom of the accommodating chamber, specifically, the pipeline can be connected to the bottom surface of the accommodating chamber, or the pipeline can be connected to the side wall near the bottom surface of the accommodating chamber. The accommodating chamber can contain liquid (such as one or more of water, hydrogen peroxide, HF, HCl and HNO3), and the ozone entering from the bottom of the accommodating chamber passes through the liquid contained in the accommodating chamber, carrying the liquid molecules out of the liquid. The accommodating chamber can also be empty.

[0075] Embodiment 4

[0076] In some embodiments, an acid treatment module 130 is further included. The rear end of the acid treatment module 130 is connected to the surface dehydration treatment module 110. The acid treatment module 130 includes a first ozone washing function tank group 131; and / or a second acid washing function tank group 132;

[0077] The first ozone washing function tank group 131 includes at least one first ozone washing function tank;

[0078] The second pickling functional tank group 132 includes at least one second pickling functional tank.

[0079] The rear end of the acid treatment module 130 is connected to the surface dehydration treatment module 110 to ensure that the cleaned silicon wafer can directly enter the dehydration treatment module to avoid contamination during the intermediate process.

[0080] The acid treatment module 130 includes a first ozone washing functional tank group 131 and / or a second acid washing functional tank group 132. These two functional tank groups can be used alone or in combination to meet different cleaning requirements.

[0081] The first ozone washing function tank group 131 includes at least one first ozone washing function tank, which uses ozone dissolved in an acidic solution to deeply clean the surface of the silicon wafer. Ozone is a strong oxidant, and ozone reacts with the surface of the silicon wafer to generate volatile substances such as water and carbon dioxide, which can effectively remove organic pollutants, microparticles and some metal ions on the surface of the silicon wafer, thereby achieving cleaning.

[0082] The second pickling function tank group 132 includes at least one second pickling function tank, which is used to remove residual pollutants and impurities on the surface of the silicon wafer, especially inorganic pollutants and metal ions. The silicon wafer is pickled in the second pickling function tank by a strong acid solution (such as nitric acid, hydrofluoric acid, etc.). The acidic solution reacts chemically with the pollutants on the surface of the silicon wafer to generate soluble substances, which is convenient for subsequent cleaning.

[0083] It can be understood that the first ozone washing function tank group 131 may include one first ozone washing function tank, or may include multiple first ozone washing function tanks. The multiple first ozone washing function tanks may be connected in series in sequence, or may be arranged in parallel with each other, or may be arranged in other ways. The specific arrangement is based on actual needs and is not limited here.

[0084] Similarly, the second pickling function tank group 132 can include one second pickling function tank, or it can include multiple second pickling function tanks. The multiple second pickling function tanks can be connected in series in sequence, or they can be arranged in parallel, or they can be arranged in other ways. The specific arrangement is based on actual needs and is not limited here.

[0085] Embodiment 5

[0086] In some embodiments, the acid treatment module 130 further includes a second water washing tank group 133 and / or a third water washing tank group 134;

[0087] The second water washing tank group 133 is arranged after the first ozone washing tank group 131, and the second water washing tank group 133 includes at least one second water washing tank;

[0088] The third water washing tank group 134 is disposed after the second pickling functional tank group 132, and the third water washing tank group 134 includes at least one third water washing tank.

[0089] When the first ozone washing function tank group 131 is provided, the second water washing tank group 133 is provided after the first ozone washing function tank group 131. The silicon wafer after the first ozone washing is thoroughly cleaned by water flow to remove the chemical products and other trace impurities remaining on the surface. Specifically, after the silicon wafer is pulled out of the first ozone washing function tank, it enters the second water washing tank group 133. Deionized water (DI water) is usually used for cleaning in the second water washing tank to ensure the removal of chemical products and other trace impurities remaining on the surface of the silicon wafer, and the contact between the water flow and the surface of the silicon wafer further improves the cleaning effect. At the same time, the reaction between the first ozone washing solution and the subsequent cleaning solution is avoided.

[0090] When a second pickling function tank is provided, the third water washing tank group 134 is provided after the second pickling function tank group 132. The pickled silicon wafer is thoroughly cleaned by water flow to remove the acidic solution and other impurities remaining on the surface. Specifically, after the silicon wafer is pulled out of the second pickling function tank, it enters the third water washing tank group 134. Deionized water (DI water) is usually used for cleaning in the third water washing tank to ensure the removal of the acidic solution and other trace impurities remaining on the surface of the silicon wafer, and the contact between the water flow and the surface of the silicon wafer further improves the cleaning effect. At the same time, the reaction between the first ozone washing solution and the subsequent cleaning solution is avoided.

[0091] It can be understood that the second water washing tank group 133 can include one second water washing tank, or multiple second water washing tanks. The multiple second water washing tanks can be connected in series in sequence, or arranged in parallel, or in other arrangements. The specific arrangement is based on actual needs and is not limited here.

[0092] Similarly, the third water washing tank group 134 may include one third water washing tank or multiple third water washing tanks. The multiple third water washing tanks may be connected in series in sequence, or arranged in parallel, or in other arrangements. The specific arrangement is based on actual needs and is not limited here.

[0093] Embodiment 6

[0094] In some embodiments, an alkaline treatment module 140 is further included. The rear end of the alkaline treatment module 140 is connected to the acid treatment module 130. The alkaline treatment module 140 includes an alkaline corrosion function tank group 141 and / or a first alkaline washing function tank group 142.

[0095] The alkaline corrosion functional tank group 141 includes at least one alkaline corrosion functional tank;

[0096] The first alkali washing functional tank group 142 includes at least one first alkali washing functional tank.

[0097] The rear end of the alkaline treatment module 140 is connected to the acid treatment module 130 , that is, the silicon wafers treated by the alkaline treatment module 140 immediately enter the acid treatment module 130 for treatment.

[0098] The alkaline treatment module 140 includes an alkaline corrosion functional tank group 141 and / or a first alkaline washing functional tank group 142. These two functional tank groups can be used alone or in combination to meet different cleaning requirements.

[0099] The alkaline corrosion functional tank group 141 includes at least one alkaline corrosion functional tank, in which a heating device is usually provided. An alkaline corrosion solution is prepared using KOH or NaOH and additives, and the temperature is heated to 50-80°C. Surface corrosion such as texturing or polishing is performed on the surface of the silicon wafer to remove surface microparticles and uneven structures, improve surface quality, and form the surface morphology structure required by the process.

[0100] The first alkaline cleaning functional tank group 142 includes at least one first alkaline cleaning functional tank, and a heating device is usually provided in the first alkaline cleaning functional tank. A hot alkaline hydrogen peroxide solution is prepared using KOH or NaOH and H2O2, and the temperature is heated to 50-80°C. The alkaline solution chemically reacts with the pollutants and microstructures on the surface of the silicon wafer to generate soluble substances, which is convenient for subsequent cleaning.

[0101] It can be understood that the alkaline corrosion functional tank group 141 can include one alkaline corrosion functional tank, or multiple alkaline corrosion functional tanks. The multiple alkaline corrosion functional tanks can be connected in series in sequence, or arranged in parallel, or in other arrangements. The specific arrangement is based on actual needs and is not limited here.

[0102] Similarly, the first alkali washing function tank group 142 may include one first alkali washing function tank, or may include multiple first alkali washing function tanks. The multiple first alkali washing function tanks may be connected in series in sequence, or may be arranged in parallel, or may be arranged in other ways. The specific arrangement is based on actual needs and is not limited here.

[0103] When the alkaline treatment module 140 includes the alkaline corrosion functional tank group 141 and the first alkaline washing functional tank group 142, the order in which the alkaline corrosion functional tank group 141 and the first alkaline washing functional tank group 142 are connected is not limited.

[0104] Embodiment 7

[0105] In some embodiments, the alkaline treatment module 140 further includes a fourth water washing tank group 143 and / or a fifth water washing tank group 144;

[0106] The fourth water washing tank group 143 is arranged after the alkaline corrosion functional tank group 141, and the fourth water washing tank group 143 includes at least one fourth water washing tank;

[0107] The fifth water washing tank group 144 is disposed after the first alkali washing functional tank group 142 , and the fifth water washing tank group 144 includes at least one fifth water washing tank.

[0108] When the alkaline corrosion functional tank group 141 is provided, the fourth water washing tank group 143 is provided after the alkaline corrosion functional tank group 141. The silicon wafer after the alkaline corrosion is thoroughly cleaned by water flow to remove the chemical products and other trace impurities remaining on the surface. Specifically, after the silicon wafer is pulled out of the alkaline corrosion functional tank, it enters the fourth water washing tank group 143. Deionized water (DI water) is usually used for cleaning in the fourth water washing tank to ensure the removal of chemical reaction products and other trace impurities remaining on the surface of the silicon wafer, and the contact between the water flow and the surface of the silicon wafer further improves the cleaning effect. At the same time, the reaction between the alkaline corrosion solution and the subsequent cleaning solution is avoided.

[0109] When the first alkali washing function tank group 142 is provided, the fifth water washing tank group 144 is provided after the first alkali washing function tank group 142. The acid-washed silicon wafer is thoroughly cleaned by water flow to remove the alkaline solution and other impurities remaining on the surface. Specifically, after the silicon wafer is pulled out of the first alkali washing function tank, it enters the fifth water washing tank group 144. Deionized water (DI water) is usually used for cleaning in the fifth water washing tank to ensure the removal of the acid solution and other trace impurities remaining on the surface of the silicon wafer, and the contact between the water flow and the surface of the silicon wafer further improves the cleaning effect. At the same time, the reaction between the alkali-corroded solution and the subsequent cleaning solution is avoided.

[0110] It can be understood that the fourth water washing tank group 143 can include one fourth water washing tank, or multiple fourth water washing tanks. The multiple fourth water washing tanks can be connected in series in sequence, or arranged in parallel, or in other arrangements. The specific arrangement is based on actual needs and is not limited here.

[0111] Similarly, the fifth water washing tank group 144 may include one fifth water washing tank or multiple fifth water washing tanks. The multiple fifth water washing tanks may be connected in series in sequence, or arranged in parallel, or in other arrangements. The specific arrangement is based on actual needs and is not limited here.

[0112] Embodiment 8

[0113] In some embodiments, a pretreatment module 150 is further included, the rear end of the pretreatment module 150 is connected to the alkaline treatment module 140, and the pretreatment module 150 includes a second alkaline washing function tank group 151 and / or a second ozone washing function tank group 152;

[0114] The second alkali washing functional tank group 151 includes at least one second alkali washing functional tank;

[0115] The second ozone washing function tank group 152 includes at least one second ozone washing function tank.

[0116] The rear end of the pre-treatment module 150 is connected to the alkaline treatment module 140 , that is, the silicon wafers processed by the pre-treatment module 150 immediately enter the alkaline treatment module 140 for treatment.

[0117] The pretreatment module 150 includes a second alkali washing functional tank group 151 and / or a second ozone washing functional tank group 152. These two functional tank groups can be used alone or in combination to meet different cleaning requirements.

[0118] The second alkaline cleaning functional tank group 151 includes at least one second alkaline cleaning functional tank. A heating device can usually be provided in the second alkaline cleaning functional tank. KOH or NaOH and H2O2 are used to prepare a hot alkaline hydrogen peroxide solution, and the temperature is heated to 50-80°C. The alkaline solution chemically reacts with the pollutants and microstructures on the surface of the silicon wafer to generate soluble substances, which is convenient for subsequent cleaning.

[0119] The second ozone washing function tank group 152 includes at least one second ozone washing function tank, which uses ozone dissolved in an acidic solution to deeply clean the surface of the silicon wafer. Ozone is a strong oxidant, and ozone reacts with the surface of the silicon wafer to generate volatile substances such as water and carbon dioxide, which can effectively remove organic pollutants, microparticles and some metal ions on the surface of the silicon wafer, thereby achieving cleaning.

[0120] It can be understood that the second alkali washing function tank group 151 can include one second alkali washing tank, or multiple second alkali washing function tanks. The multiple second alkali washing function tanks can be connected in series in sequence, or arranged in parallel, or in other arrangements. The specific arrangement is based on actual needs and is not limited here.

[0121] Similarly, the second ozone washing function tank group 152 may include one second ozone washing tank, or may include multiple second ozone washing function tanks. The multiple second ozone washing function tanks may be connected in series in sequence, or may be arranged in parallel, or may be arranged in other ways. The specific arrangement is based on actual needs and is not limited here.

[0122] Embodiment 9

[0123] In some embodiments, the pre-treatment module 150 further includes a sixth water washing tank group 153 and / or a seventh water washing tank group 154;

[0124] The sixth water washing tank group 153 is arranged after the second alkali washing function tank group 151, and the sixth water washing tank group 153 includes at least one sixth water washing tank;

[0125] The seventh water washing tank group 154 ​​is disposed after the second ozone washing tank group 152 , and the seventh water washing tank group 154 ​​includes at least one seventh water washing tank.

[0126] When the second alkali washing function tank group 151 is provided, the sixth water washing tank group 153 is provided after the second alkali washing function tank group 151. The silicon wafer after the second alkali washing is thoroughly cleaned by water flow to remove the chemical products and other trace impurities remaining on the surface. Specifically, after the silicon wafer is pulled out of the second alkali washing function tank, it enters the sixth water washing tank group 153. Deionized water (DI water) is usually used for cleaning in the sixth water washing tank to ensure the removal of chemical products and other trace impurities remaining on the surface of the silicon wafer, and the cleaning effect is further improved by the contact between the water flow and the surface of the silicon wafer. At the same time, the reaction between the second alkali washing solution and the subsequent cleaning solution is avoided.

[0127] When the second ozone washing function tank group 152 is provided, the seventh water washing tank group 154 ​​is provided after the second ozone washing function tank group 152. The acid-washed silicon wafer is thoroughly cleaned by water flow to remove the acidic solution and other impurities remaining on the surface. Specifically, after the silicon wafer is pulled out of the second ozone washing function tank, it enters the seventh water washing tank group 154. Deionized water (DI water) is usually used for cleaning in the seventh water washing tank to ensure the removal of the acidic solution and other trace impurities remaining on the surface of the silicon wafer, and the contact between the water flow and the surface of the silicon wafer further improves the cleaning effect. At the same time, the reaction between the second alkaline washing solution and the subsequent cleaning solution is avoided.

[0128] It can be understood that the sixth water washing tank group 153 can include one sixth water washing tank, or multiple sixth water washing tanks. The multiple sixth water washing tanks can be connected in series in sequence, or arranged in parallel, or in other arrangements. The specific arrangement is based on actual needs and is not limited here.

[0129] Similarly, the seventh water washing tank group 154 ​​may include one seventh water washing tank or multiple seventh water washing tanks. The multiple seventh water washing tanks may be connected in series in sequence, or arranged in parallel, or in other arrangements. The specific arrangement is based on actual needs and is not limited here.

[0130] Embodiment 10

[0131] In some embodiments, the wet chemical surface cleaning device 100 further includes a transport module (not shown), the transport module including a motion unit and a carrier unit, the carrier unit is used to load the objects to be cleaned, and the motion unit is used to drive the carrier unit to move.

[0132] The motion unit drives the carrier to move, and is responsible for accurately moving the carrier between different slot groups to ensure the processing order of the silicon wafers in each process, so as to realize the automation of the cleaning process, reduce manual intervention, and improve production efficiency and consistency. The motion unit can be a robotic arm, a conveyor belt, a track system, etc., which are not limited here, to realize the automation of the cleaning process, reduce manual intervention, and improve production efficiency and consistency.

[0133] The carrier unit is used to load the silicon wafers to be cleaned, ensuring that the silicon wafers are adequately supported and protected during the cleaning process. It is understandable that the carrier unit needs to facilitate the removal of the silicon wafers, and after cleaning, the silicon wafers can be reliably released to ensure that the silicon wafers enter the next processing step. Specifically, it can be a basket-type carrier, a clamp-type carrier, a transfer box, etc., which are not limited here.

[0134] Embodiment 11

[0135] In some embodiments, the motion unit includes a track and a telescopic arm. The track passes through at least the surface dehydration treatment module 110 and the drying and surface gas treatment module 120 in sequence. The telescopic arm can be telescoped in the vertical direction. One end of the telescopic arm is connected to the carrier unit, and the other end is movably connected to the track.

[0136] The track is designed to at least pass through the surface dehydration treatment module 110 and the drying and surface gas treatment module 120 in sequence to ensure the smooth transmission of the silicon wafers between the various processing steps and realize the lateral movement of the carrier unit. The telescopic arm is responsible for moving the carrier unit in the vertical direction to ensure that the silicon wafers can accurately enter and exit each slot group. One end of the telescopic arm is connected to the carrier unit to drive the carrier to follow the movement, and the other end is movably connected to the track and moves along the extension direction of the track to ensure stable movement on the track. The telescopic speed of the telescopic arm is adjustable to meet the requirements of pulling out the silicon wafers in slots with different functions. For example, when slowly pulling the functional slot, the telescopic arm has a slower telescopic speed to ensure that the silicon wafers are slowly pulled out of the cleaning liquid and reduce the amount of liquid.

[0137] It can be understood that each functional module in the above embodiments can be made of corrosion-resistant materials, such as stainless steel or polytetrafluoroethylene (PTFE), to ensure that it is not corroded in a strong acidic or alkaline environment.

[0138] It is understandable that those skilled in the art can, under the guidance of the above embodiments, combine various implementation methods in the above embodiments to obtain technical solutions of multiple implementation methods.

[0139] The above are only preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A wet chemical surface cleaning device, characterized in that: It includes a surface dehydration treatment module and a drying and surface gas treatment module; The drying and surface gas treatment module is connected to the rear end of the surface dehydration treatment module; The surface dehydration treatment module comprises a first pickling function slot group and a slow pulling function slot group arranged in sequence, wherein the first pickling function slot group comprises at least one first pickling function slot, and the slow pulling function slot group comprises at least one slow pulling function slot; The drying and surface gas treatment module includes a drying function slot group and a surface gas treatment function slot group arranged in sequence, the drying function slot group includes at least one drying function slot, and the surface gas treatment function slot group includes at least one surface gas treatment function slot.

2. The wet chemical surface cleaning device according to claim 1, characterized in that The surface dehydration treatment module further includes a first water washing tank group, which is arranged between the first pickling functional tank group and the slow pulling functional tank group, and the first water washing tank group includes at least one first water washing tank.

3. The wet chemical surface cleaning device according to claim 1, characterized in that The surface gas treatment functional groove comprises a groove body, and a plurality of ventilation holes are arranged on the side wall of the groove body, and the ventilation holes are connected with a reaction gas source.

4. The wet chemical surface cleaning device according to claim 4, characterized in that A heating device is also provided in the tank body.

5. The wet chemical surface cleaning device according to claim 1, characterized in that It also includes an acid treatment module, the rear end of which is connected to the surface dehydration treatment module, and the acid treatment module includes a first ozone washing function tank group; and / or a second acid washing function tank group; The first ozone washing function tank group includes at least one first ozone washing function tank; The second pickling functional tank group includes at least one second pickling functional tank.

6. The wet chemical surface cleaning device according to claim 5, characterized in that The acid treatment module further includes a second water washing tank group, and / or a third water washing tank group; The second water washing tank group is arranged after the first ozone washing tank group, and the second water washing tank group includes at least one second water washing tank; The third water washing tank group is arranged after the second pickling functional tank group, and the third water washing tank group includes at least one third water washing tank.

7. The wet chemical surface cleaning device according to claim 5, characterized in that It also includes an alkaline treatment module, the rear end of which is connected to the acidic treatment module, and the alkaline treatment module includes an alkaline corrosion functional tank group and / or a first alkaline washing functional tank group; The alkaline corrosion functional tank group includes at least one alkaline corrosion functional tank; The first alkali washing functional tank group includes at least one first alkali washing functional tank.

8. The wet chemical surface cleaning device according to claim 7, characterized in that The alkaline treatment module further includes a fourth water washing tank group, and / or a fifth water washing tank group; The fourth water washing tank group is arranged after the alkali corrosion functional tank group, and the fourth water washing tank group includes at least one fourth water washing tank; The fifth water washing tank group is arranged after the first alkali washing functional tank group, and the fifth water washing tank group includes at least one fifth water washing tank.

9. The wet chemical surface cleaning device according to claim 7, characterized in that It also includes a pretreatment module, the rear end of which is connected to the alkaline treatment module, and the pretreatment module includes a second alkaline washing function tank group and / or a second ozone washing function tank group; The second alkali washing functional tank group includes at least one second alkali washing functional tank; The second ozone washing function tank group includes at least one second ozone washing function tank.

10. The wet chemical surface cleaning apparatus according to claim 7, characterized in that The pretreatment module further includes a sixth water washing tank group, and / or a seventh water washing tank group; The sixth water washing tank group is arranged after the second alkali washing functional tank group, and the sixth water washing tank group includes at least one sixth water washing tank; The seventh water washing tank group is arranged after the second ozone washing function tank group, and the seventh water washing tank group includes at least one seventh water washing tank.

11. The wet chemical surface cleaning apparatus according to claim 1, characterized in that It also includes a transport module, which includes a motion unit and a carrier unit. The carrier unit is used to load objects to be cleaned, and the motion unit is used to drive the carrier unit to move.

12. The wet chemical surface cleaning device according to claim 11, characterized in that The motion unit includes a track and a telescopic arm. The track passes through at least the surface dehydration treatment module and the drying and surface gas treatment module in sequence. The telescopic arm can be telescoped in the vertical direction. One end of the telescopic arm is connected to the carrier unit, and the other end is movably connected to the track.

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