Three-stage power semiconductor module and arrangement structure thereof

Abstract

The invention relates to a three-stage power semiconductor module having a housing, having a switching device, having a first DC voltage terminal element, a second DC voltage terminal element and a third DC voltage terminal element, and having an AC voltage terminal element, wherein the respective terminal regions of the DC voltage terminal elements have the same normal direction and are arranged adjacent to one another in the projection in the normal direction, and wherein the third terminal region of the third DC voltage terminal element lies in a first plane when viewed in the normal direction, the second terminal region of the second DC voltage terminal element lies in a second plane parallel to the first plane. An arrangement comprising a plurality of such three-stage power semiconductor modules is also provided.

Description

Technical Field

[0001] The invention describes a three-stage power semiconductor module having a preferably frame-shaped housing, having a switching device, having a first, a second and a third DC voltage terminal element and having an AC voltage terminal element, wherein the individual terminal areas of the DC voltage terminal elements have the same normal direction and are arranged adjacent to each other in the projection in the normal direction. The invention also describes an arrangement comprising a plurality of such three-stage power semiconductor modules. Background Art

[0002] DE 10 201 7 115 883 A1 discloses a submodule and an arrangement thereof, wherein the submodule comprises a switch device having a substrate and a conductor track arranged on the substrate. The submodule comprises first and second direct current (DC) voltage conductor tracks and first and second DC voltage terminal elements conductively connected to the first and second DC voltage conductor tracks, and alternating current (AC) voltage conductor tracks and AC voltage terminal elements conductively connected to the AC voltage conductor tracks. The submodule further comprises a molded insulator, which surrounds the switch device in the form of a frame. In this case, the first DC voltage terminal element is supported on a first support of the molded insulator by a first contact section, and the AC voltage terminal element is supported on a second support of the molded insulator by a second contact section. A first pressure device is configured to extend through a first recess of the first support in an electrically insulating manner and to form a conductive pressure connection between the first DC voltage terminal element and an associated first DC voltage connection element, and a second pressure device is configured to extend through a second recess of the second support in an electrically insulating manner and to form a conductive pressure connection between the AC voltage terminal element and an associated AC voltage connection element. Summary of the invention

[0003] In view of the above prior art, an object of the present invention is to provide a three-level power semiconductor module having three DC voltage terminal elements.

[0004] According to the present invention, this object is achieved by a three-stage power semiconductor module, which has a preferably frame-shaped housing, a switching device, a first DC voltage terminal element, a second DC voltage terminal element and a third DC voltage terminal element, and an AC voltage terminal element, wherein the respective terminal areas of the DC voltage terminal elements have the same normal direction and are arranged adjacent to each other in the projection in the normal direction, and wherein when viewed in the normal direction, the third terminal area of ​​the third DC voltage terminal element is located in a first plane, and the second terminal area of ​​the second DC voltage terminal element is located in a second plane parallel to the first plane.

[0005] Preferably, the first terminal region of the first DC voltage terminal element is located in the second plane when viewed in the normal direction. Particularly preferably, all terminal regions are adjacent to one another but not in a row in a projection in the normal direction.

[0006] Alternatively, it is preferred that the first terminal region of the first DC voltage terminal element lies in a third plane parallel to both the first plane and the second plane, when viewed in the normal direction.

[0007] It may be advantageous that the first conductive section of the first DC voltage terminal element, which is adjacent to the first terminal area, is at least partially flush with the third terminal area of ​​the third DC voltage terminal element in the normal direction. Therefore, the first and third DC voltage terminal elements form a stack in this area. In addition, it may be advantageous that the second conductive section of the second DC voltage terminal element, which is adjacent to the second terminal area, is at least partially flush with the third terminal area of ​​the third DC voltage terminal element in the normal direction. Therefore, the second and third DC voltage terminal elements also form a stack in this area.

[0008] Preferably, all DC voltage terminal elements are arranged on a first narrow side of the housing. Particularly preferably, AC voltage terminal elements are additionally arranged on a second narrow side of the housing.

[0009] It is particularly advantageous if the DC voltage terminal element and the AC voltage terminal element are configured as metal foil or metal sheet with a thickness of preferably from 300 μm to 2000 μm, particularly preferably from 500 μm to 1500 μm.

[0010] It may be advantageous if the housing has on its first narrow side a first and a second support region for the first and the second DC voltage connection element and a third support region for the third DC voltage connection element.

[0011] Furthermore, it may be preferred that the centrally arranged fastening recess extends through the switching device.

[0012] In a first configuration, it may be advantageous if the first DC voltage terminal element is intended to be connected to a high potential, wherein the second DC voltage terminal element is intended to be connected to a low potential, and wherein the third DC voltage terminal element is intended to be connected to an intermediate potential.

[0013] In the second configuration, it may be advantageous if the first DC voltage terminal element is intended to be connected to a high potential, wherein the third DC voltage terminal element is intended to be connected to a low potential, and wherein the second DC voltage terminal element is intended to be connected to an intermediate potential.

[0014] In a third configuration, it may be advantageous if the second DC voltage terminal element is intended to be connected to a high potential, wherein the third DC voltage terminal element is intended to be connected to a low potential, and wherein the first DC voltage terminal element is intended to be connected to an intermediate potential.

[0015] Furthermore, the object is achieved by a power electronic arrangement comprising a plurality of three-level power semiconductor modules as described above, wherein all three-level power semiconductor modules are arranged in a row with their long sides adjacent to one another, and wherein the DC voltage terminal elements of all power semiconductor modules are preferably also arranged in a row.

[0016] It may be advantageous if all respective DC voltage terminal elements are connected with suitable polarity to a common, respectively associated DC voltage lead element of the DC voltage lead arrangement.

[0017] It may be preferred that all three-level power semiconductor modules have a common driver device. In this case, it may be advantageous that each of the three-level power semiconductor modules is at least partially covered by the driver device.

[0018] It should be understood that the various configurations of the invention can be implemented individually or in any desired combination in order to achieve improvements. In particular, the features mentioned and explained above and below can be used not only in the specified combination, but also in other combinations or alone, without departing from the scope of the invention, regardless of whether they are disclosed in the context of a three-level power semiconductor module or in the context of an arrangement. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Further explanations, advantageous details and features of the invention can be found in the following description of exemplary embodiments of the invention, which are described in Figures 1 to 7 or schematically represented in a corresponding part thereof.

[0020] Figure 1 and Figure 2 Details of the DC voltage terminal elements and the housing of a first configuration of a three-level power semiconductor module according to the invention are shown.

[0021] Figure 3 A first configuration of a three-stage power semiconductor module according to the invention is shown in a three-dimensional view.

[0022] Figure 4 A plan view of a first configuration of a three-level power semiconductor module according to the invention is shown.

[0023] Figure 5 An arrangement according to the invention is shown.

[0024] Figure 6Details of the DC voltage terminal elements and the housing of a second configuration of a three-level power semiconductor module according to the invention are shown.

[0025] Figure 7 A second configuration of a three-level power semiconductor module according to the invention is shown in a three-dimensional view. DETAILED DESCRIPTION

[0026] Figure 1 and Figure 2 Details of the DC voltage terminal elements and housing of a first configuration of a three-level power semiconductor module according to the invention are shown in three orthogonal views. For the sake of clarity, Figure 1 Only a part of the housing 2 is shown, and in this case only one DC voltage terminal element 42 , whose terminal region 420 defines the normal direction N. Figure 2 All DC voltage terminal elements 40 , 42 , 44 are shown, whose terminal regions 400 , 420 , 440 have the same normal direction N to the associated housing 2 , in this case the z direction.

[0027] In each case, the cross-sectional view above the plan view is taken along line BB and the cross-sectional view beside the plan view is taken along line AA.

[0028] In this case, the housing 2 is configured as an insulating housing, in particular a plastic housing, and has a first support region 200 and a second support region 220 on its first narrow side 20, see Figure 3 or Figure 5 The first DC voltage terminal element 40 is arranged on the first supporting area 200, and the second DC voltage terminal element 42 is arranged on the second supporting area 220, and these supporting areas 200, 220 are also aligned in the normal direction N. The first DC voltage terminal element 40 and the second DC voltage terminal element 42 are respectively arranged on one of these supporting areas 200, 220. Therefore, the terminal areas 400, 420 of the first DC voltage terminal element 40 and the second DC voltage terminal element 42 are respectively located in the second plane E2, where they are arranged adjacent to each other.

[0029] The housing 2 also has a third support area 240 for a third DC voltage terminal element 44, which is also aligned in the normal direction N. The third DC voltage terminal element 44 is arranged on this third support area 240 so that its third terminal area 440 is also aligned in the normal direction N. Therefore, all terminal areas 400, 420, 440 of the DC voltage terminal elements 40, 42, 44 are aligned in the normal direction N. In addition, the support area 240 of the third DC voltage terminal element 44 is arranged backward in the negative y direction and is arranged in a first plane E1 parallel to the second plane E2, which is arranged in the negative normal direction N, that is, also located above the second plane E2 in the negative z direction. By this configuration of the housing 2 and by this arrangement structure of the DC voltage terminal elements 40, 42, 44, all three terminal areas 400, 420, 440 of the three DC voltage terminal elements 40, 42, 44 are positioned adjacent to each other, but not in a row.

[0030] Therefore, the first conductive section 402 of the first DC voltage terminal element 40 adjacent to the first terminal area 400 is partially flush with the third terminal area 440 of the third DC voltage terminal element 44 in the normal direction N. At the same time and symmetrically therewith, the second conductive section 422 of the second DC voltage terminal element 42 adjacent to the second terminal area 420 is partially flush with the third terminal area 440 of the third DC voltage terminal element 44 in the normal direction N.

[0031] This configuration results in a correspondingly low inductance arrangement of the combination of the first DC voltage terminal element 40 and the third DC voltage terminal element 44 and the combination of the second DC voltage terminal element 42 and the third DC voltage terminal element 44 .

[0032] The housing 2 or an additional insulating element cooperating with the housing 2 is of course configured in such a way that the respective DC voltage terminal elements are sufficiently electrically insulated from one another.

[0033] Figure 3 A first configuration of a three-level power semiconductor module according to the invention is shown in a three-dimensional schematic diagram. A substantially cuboid housing 2 is shown, wherein all DC voltage terminal elements 40, 42, 44 are arranged on its first narrow side 20 and the AC voltage terminal elements 50 are arranged on the second narrow side 22. This configuration allows a very compact arrangement of a plurality of three-level power semiconductor modules adjacent to one another, see Figure 5 .

[0034] The specific configuration and arrangement of the DC voltage terminal elements 40, 42, 44 corresponds to the Figure 2 configuration and layout structure.

[0035] The DC voltage terminal elements 40 , 42 , 44 and the AC voltage terminal element 50 of the three-level power semiconductor module are configured as metal sheets with a thickness of 1 mm.

[0036] Figure 4 A schematic plan view of a first configuration of a three-level power semiconductor module according to the invention is shown.Purely by way of explanation and without a specific configuration, a switching device is shown inside the housing 2 . Figure 3 The AC voltage terminal elements 50 and DC voltage terminal elements 40, 42, 44 described in the drawings are used for their electrical connection. The switching device is driven using auxiliary terminal elements, which are particularly configured as control terminal elements, arranged on the long sides 20, 22 of the housing 2 and protrude therefrom in the normal direction N.

[0037] A three-stage power semiconductor module commonly used in the art has three different DC potentials, namely a high potential, a low potential and an intermediate potential. As is common in the art, the high potential and the low potential may be equal in magnitude but have different signs, while the intermediate potential may be a ground potential as is common in the art. In principle, each of these three potentials may be connected arbitrarily to one of the DC voltage terminal elements 40, 42, 44.

[0038] Figure 5 An arrangement according to the invention is shown in which three three-level power semiconductor modules 1 are arranged adjacent to each other with their long sides 24. In this case, the DC voltage terminal elements 40, 42, 44 of all three-level power semiconductor modules 1 are arranged on the same narrow side, in particular the first narrow side 20.

[0039] Furthermore, three DC voltage lead elements 80, 82, 84 are shown, which are partially stacked and form the DC voltage lead 8 of the capacitor device (not shown), and for the sake of clarity, the three DC voltage lead elements 80, 82, 84 of the three-level power semiconductor module 1 are spaced apart. The respective DC voltage lead elements 80, 82, 84 are connected to the respectively associated DC voltage terminal elements 40, 42, 44 with appropriate polarity.

[0040] Of course, the DC voltage terminal elements 40 , 42 , 44 and the DC voltage lead elements 80 , 82 , 84 have insulating means 60 , 88 for electrical insulation of elements with different polarities.

[0041] Furthermore, the two DC voltage lead elements 82, 84 have recesses which are configured and intended so that a laser beam incident through these recesses from the negative normal direction N can act on the DC voltage lead elements 80, 82 arranged underneath. The laser welding connection formed in this way produces a permanent material bond between the DC voltage lead elements 82, 84 and the associated DC voltage terminal elements 42, 44, respectively.

[0042] Each three-level power semiconductor module 1 also has auxiliary terminal elements 72, which are arranged along one or both long sides 24. These auxiliary terminal elements 72 are used for the conductive connection of a driver device 70 common to all power semiconductor modules 1. The latter, i.e., the driver device 70, respectively partially covers all three-level power semiconductor modules 1.

[0043] Each three-level power semiconductor module 1 has a centrally arranged fastening recess 6 which extends through the switching device and further components following in the normal direction N. A section of a fastening device 60 , in particular a screw, is arranged in this fastening recess 6 , which fastening device 60 fixes the respective three-level power semiconductor module 1 to a cooling device (not shown here), which is preferably a liquid cooling device.

[0044] Figure 6 Detail of the DC voltage terminal elements 40, 42, 44 and the housing 2 of a second configuration of the three-level power semiconductor module 1 according to the invention is shown, the corresponding view being as shown in FIG. Figure 2 The essential difference here from the first configuration is the completely stacked arrangement of the DC voltage terminal elements 40 , 42 , 44 , so that each of the respectively associated terminal regions 400 , 420 , 440 is located on its own plane E1 , E2 , E3 .

[0045] The first terminal region 400 of the first DC voltage terminal element 40 is therefore located in a third plane E3 parallel to the first and second planes as seen in the normal direction N. Likewise, all terminal regions 400 , 420 , 440 are adjacent to one another in a row in the projection onto the normal direction N.

[0046] In this way, the second conductive segment 422 of the second DC voltage terminal element 42, which is adjacent to the second terminal area 420, is partially flush with the third terminal area 440 of the third DC voltage terminal element 44 in the normal direction N. Similarly, the conductive segment 402 of the first DC voltage terminal element 40, which is adjacent to the first terminal area 400, is partially flush with the second terminal area 420 of the second DC voltage terminal element 42 in the normal direction N. The conductive segment 442 of the third DC voltage terminal element 44, which is adjacent to the third terminal area 440, is partially flush with the first conductive segment 402 of the first DC voltage terminal element and the second conductive segment 422 of the second DC voltage terminal element 42 in the normal direction N.

[0047] Figure 7A second configuration of a three-level power semiconductor module 1 according to the invention is shown in a three-dimensional view. A substantially rectangular housing 2 is shown, wherein all DC voltage terminal elements 40, 42, 44 are arranged on its first narrow side 20, and AC voltage terminal elements 50 are arranged on the second narrow side 22. The specific configuration and arrangement of the DC voltage terminal elements 40, 42, 44 corresponds to the configuration according to Figure 6 Those.

[0048] In this second configuration of the three-level power semiconductor module 1 , preferably, but not necessarily, the intermediate potential is intended to be connected to the second DC voltage terminal element 42 .

Claims

1. A three-level power semiconductor module (1) having a housing (2), having a switching device (3), having first, second and third DC voltage terminal elements (40, 42, 44), and having AC voltage terminal elements (50), The corresponding terminal areas (400, 420, 440) of the DC voltage terminal elements (40, 42, 44) have the same normal direction (N) and are arranged adjacent to each other in a projection onto the normal direction (N), and When viewed in the normal direction, the third terminal area (440) of the third DC voltage terminal element (44) is located in a first plane (E1), and the second terminal area (420) of the second DC voltage terminal element (42) is located in a second plane (E2) parallel to the first plane.

2. The three-stage power semiconductor module according to claim 1, characterized in that: The shell is a frame-shaped shell.

3. The three-stage power semiconductor module according to claim 1, characterized in that: When viewed in the normal direction, the first terminal region (400) of the first DC voltage terminal element (40) is located in the second plane (E2).

4. The three-level power semiconductor module according to claim 1 or 2, characterized in that: All terminal regions (400, 420, 440) are adjacent to each other but not in a row in the projection onto the normal direction (N).

5. The three-stage power semiconductor module according to claim 1, characterized in that: When viewed in the normal direction, the first terminal region (400) of the first DC voltage terminal element (40) is located in a third plane (E3) parallel to both the first plane and the second plane.

6. The three-level power semiconductor module according to claim 1 or 2, characterized in that: A first conductive section (402) of the first DC voltage terminal element (40) adjacent to the first terminal area (400) is at least partially flush with the third terminal area (440) of the third DC voltage terminal element (44) in the normal direction (N).

7. The three-level power semiconductor module according to claim 1 or 2, characterized in that: A second conductive section (422) of the second DC voltage terminal element (42) adjacent to the second terminal area (420) is at least partially flush with the third terminal area (440) of the third DC voltage terminal element (44) in the normal direction (N).

8. The three-level power semiconductor module according to claim 1 or 2, characterized in that: All DC voltage terminal elements (40, 42, 44) are arranged on a first narrow side (20) of the housing (2).

9. The three-level power semiconductor module according to claim 1 or 2, characterized in that: The AC voltage terminal element (50) is arranged on a second narrow side (22) of the housing (2).

10. The three-level power semiconductor module according to claim 1 or 2, characterized in that: The DC voltage terminal elements (40, 42, 44) and the AC voltage terminal elements (50) are configured as metal foils or metal sheets.

11. The three-level power semiconductor module according to claim 10, characterized in that: The DC voltage terminal elements (40, 42, 44) and the AC voltage terminal elements (50) are configured as metal foils or metal sheets having a thickness of from 300 μm to 2000 μm.

12. The three-level power semiconductor module according to claim 10, characterized in that: The DC voltage terminal elements (40, 42, 44) and the AC voltage terminal elements (50) are configured as metal foils or metal sheets having a thickness of from 500 μm to 1500 μm.

13. The three-level power semiconductor module according to claim 1 or 2, characterized in that: The housing (2) has, on its first narrow side (20), first and second support regions (200, 220) for first and second DC voltage terminal elements (40, 42) and a third support region (240) for a third DC voltage terminal element (44).

14. The three-level power semiconductor module according to claim 1 or 2, characterized in that: A centrally arranged fastening recess (6) extends through the switching device.

15. The three-level power semiconductor module according to claim 1 or 2, characterized in that: The first DC voltage terminal element (40) is intended to be connected to a high potential; wherein the second DC voltage terminal element (42) is intended to be connected to a low potential; And wherein the third DC voltage terminal element (44) is intended to be connected to an intermediate potential.

16. The three-level power semiconductor module according to claim 1 or 2, characterized in that: The first DC voltage terminal element (40) is intended to be connected to a high potential; wherein the third DC voltage terminal element (44) is intended to be connected to a low potential; And wherein the second DC voltage terminal element (42) is intended to be connected to an intermediate potential.

17. The three-level power semiconductor module according to claim 1 or 2, characterized in that: The second DC voltage terminal element (42) is intended to be connected to a high potential; wherein the third DC voltage terminal element (44) is intended to be connected to a low potential; And wherein the first DC voltage terminal element (40) is intended to be connected to an intermediate potential.

18. A power electronics arrangement (10) comprising a plurality of three-level power semiconductor modules according to any one of the preceding claims, All three-level power semiconductor modules (1) are arranged with their long sides (24) adjacent to each other in a row.

19. The power electronics arrangement according to claim 18, characterized in that: The DC voltage terminal elements (40, 42, 44) of all power semiconductor modules (1) are likewise arranged in a row.

20. The power electronics arrangement according to claim 18, characterized in that: All corresponding DC voltage terminal elements (40, 42, 44) are connected with appropriate polarity to common correspondingly associated DC voltage lead elements (80, 82, 84) of the DC voltage lead arrangement (8).

21. The power electronics arrangement according to any one of claims 18 to 20, characterized in that: All three-level power semiconductor modules (1) have a common driver device (70).

22. The power electronics arrangement according to claim 21, characterized in that: Each of the three-level power semiconductor modules (1) is at least partially covered by the driver device (70).

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