Light spot semiconductor laser

Abstract

The light spot semiconductor laser comprises a main body frame, the upper surface of the main body frame is sealed through a cover plate, a containing space is formed between the main body frame and the cover plate, and an emission opening is formed in one end of the main body frame; the semiconductor device is arranged in the accommodating space; one end of the optical fiber is communicated with the light outlet through a conduction component, the other end of the optical fiber extends upwards to one side of the emission port, a light guide channel is arranged between the optical fiber and the emission port, and the optical fiber comprises an optical fiber cladding, a homogenization layer and a quartz layer which are sequentially coated from outside to inside; and the optical lens is positioned above the light guide channel. The optical fiber formed by the optical fiber cladding, the homogenizing layer and the quartz layer is coupled with the laser emitted by the semiconductor device to output uniform light spots, the aspheric optical wafer is further coupled and optimizes optical output characteristics, the target diaphragm can effectively restrain the output size of the light spots, and the output light spots are in obvious flat-topped light distribution; the uniformity of light spots output by the optical fiber is good, the laser is miniaturized after the optical fiber is shortened, and the occupied space is small.

Description

Technical Field

[0001] The invention relates to a laser, in particular to a spot semiconductor laser. Background Art

[0002] Semiconductor lasers use certain semiconductor materials as working materials and output laser light when stimulated by electric current. Existing single laser modules usually output in the form of optical fiber, and couple the output through interfaces such as SMA.

[0003] However, in actual use, it is found that in order to ensure the uniformity and stability of the transmission light spot, the existing optical fiber needs to be made longer and maintained within a certain length range, which results in a large space occupancy rate and the homogenization effect of the light spot cannot meet the demand; and in the assembly process, due to the long length of the optical fiber, it is very easy to cause stress and breakage risks at the optical fiber coupling due to the winding of the optical fiber, and the stability is poor, which cannot meet the actual use needs. Summary of the invention

[0004] The purpose of the present invention is to overcome the deficiencies of the prior art and to provide a spot semiconductor laser with low space occupancy, good stability and good spot homogenization effect.

[0005] To achieve the above object, the technical solution adopted by the present invention is: a spot semiconductor laser, comprising:

[0006] A main frame, the upper surface of which is sealed by a cover plate, a receiving space is formed between the main frame and the cover plate, and a launch port is provided at one end of the main frame;

[0007] A semiconductor device is disposed in the accommodation space and is used to emit laser light from a light outlet;

[0008] An optical fiber, one end of which is connected to the light outlet through a conducting component, and the other end of which extends upward to one side of the emission port, and a light guide channel is provided between the optical fiber and the emission port, and the optical fiber includes an optical fiber cladding, a homogenizing layer, and a quartz layer sequentially coated from the outside to the inside;

[0009] An optical lens, located above the light guide channel and at the emission port;

[0010] The laser emitted from the light outlet of the semiconductor device is injected into the optical fiber through the conducting component for uniform coupling, and then the uniform laser is emitted from the emission outlet through the optical lens.

[0011] In one embodiment, the semiconductor device is further connected to two pins, and the two pins extend out from the main frame.

[0012] In one embodiment, the optical lens is aspherical.

[0013] In one embodiment, a target aperture is also provided at the emission port.

[0014] In one embodiment, an optical device is further provided at the light outlet.

[0015] In one embodiment, the cross section of the quartz layer is hexagonal.

[0016] In one embodiment, the homogenization layer is made of aluminum oxide and silicon.

[0017] Due to the application of the above technical solution, the present invention has the following advantages compared with the prior art:

[0018] The spot semiconductor laser outputs a uniform spot by coupling the optical fiber composed of the optical fiber cladding, the homogenization layer and the quartz layer with the laser emitted by the semiconductor device. The optical output characteristics are further coupled and optimized through the aspherical optical chip. The target aperture can effectively constrain the output size of the spot, so that the output circular spot presents an obvious flat-top light distribution. Since the spot output by the optical fiber has good uniformity, the optical fiber can be made short, the laser can be miniaturized, and the space occupied is small, which has better application scenarios. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The technical solution of the present invention is further described below in conjunction with the accompanying drawings:

[0020] Figure 1 It is a schematic diagram of the three-dimensional structure of an embodiment of the present invention;

[0021] Figure 2 is a cross-sectional view of an embodiment of the present invention;

[0022] Figure 3 for Figure 2 A magnified view of part A in FIG.

[0023] Figure 4 for Figure 2 A magnified view of part B in FIG.

[0024] Figure 5 is an internal cross-sectional view of an optical fiber in one embodiment of the present invention;

[0025] Among them: 1. Main frame; 2. Semiconductor device; 3. Optical fiber; 4. Light guide channel; 5. Optical lens; 6. Pin; 7. Target aperture; 8. Optical device; 9. Conductive component; 10. Accommodating space; 11. Launch port; 12. Cover plate; 20. Light outlet; 30. Optical fiber cladding; 31. Homogenization layer; 32. Quartz layer. DETAILED DESCRIPTION

[0026] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present application.

[0027] The invention provides a spot semiconductor laser to solve the problems of large space occupancy, poor uniformity and stability of semiconductor lasers in the prior art.

[0028] For ease of understanding, the specific process in the embodiments of the present application is described below. Figures 1 to 5 A spot semiconductor laser in an embodiment of the present application comprises a main frame 1, a semiconductor device 2, an optical fiber 3 and an optical lens 5; the surface of the main frame 1 is sealed by a cover plate 12, a receiving space 10 is formed between the main frame 1 and the cover plate 12, and an emission port 11 is provided at one end of the main frame; the semiconductor device 2 is arranged in the receiving space 10, and is used to emit laser from a light outlet 20; one end of the optical fiber 3 is connected to the light outlet 20 through a conducting component 9, and the other end extends upward to one side of the emission port 11, and a light guide channel 4 is also provided between the optical fiber 3 and the emission port 11, and the optical fiber 3 comprises an optical fiber cladding 30, a homogenizing layer 31 and a quartz layer 32 sequentially coated from the outside to the inside; the optical lens 5 is located above the light guide channel 4, and is located at the emission port 11.

[0029] In the spot semiconductor laser of the present invention, the optical fiber 3 is composed of an optical fiber cladding 30, a homogenizing layer 31 and a quartz layer 32. The structures of the three can make the spot emitted by the laser uniform and stable. At the same time, there is no need to make the length of the optical fiber 3 longer, so that the spot semiconductor laser can be miniaturized.

[0030] In one embodiment, the semiconductor device 2 is also connected to two pins 6, and the two pins 6 extend from the main frame 1. The semiconductor device 2 can be quickly connected to the outside world for relevant communication through the pins 6, which is convenient and effective to use.

[0031] In one embodiment, the optical lens 5 is of a non-spherical shape, and the optical lens 5 can further couple and optimize the optical output characteristics, thereby improving the relevant characteristics of the output laser.

[0032] In one embodiment, see Figure 3 A target aperture 7 is also provided at the emission port 11, so as to effectively restrict the size of the emitted light spot and optimize the relevant output characteristics.

[0033] In one embodiment, see Figure 4 An optical device 8 is also provided at the light outlet 20. The optical device 8 in this embodiment may be an optical lens, and the optical device 8 may be used to preliminarily optimize the light panel emitted by the semiconductor device 2.

[0034] In one embodiment, the cross-section of the quartz layer 32 is hexagonal. The quartz layer 32 here can be configured to have different structures to meet relevant usage requirements.

[0035] In one embodiment, the material of the homogenization layer 31 is composed of aluminum oxide and silicon. When light passes through, it will be randomly scattered by these particles multiple times, thereby forming a uniformly distributed light field. There is a certain difference in refractive index between the optical fiber cladding 30 and the quartz layer 32. This difference causes light of different modes to interfere with and mix with each other when passing through the homogenization optical fiber, thereby enhancing the uniformity of the light field, so that the length of the optical fiber can be made shorter.

[0036] The working process is that the laser emitted from the light outlet 20 of the semiconductor device 2 is first preliminarily coupled and optimized through an optical device, and then the laser is emitted into the optical fiber 3 through the conductive component 9, and is evenly coupled by the optical fiber cladding 30, the homogenization layer 31 and the quartz layer 32 in the optical fiber 3, and the coupled laser enters the optical chip through the light guide channel 4, and finally the laser is emitted from the emission port as a uniform laser through the optical lens.

[0037] In summary, the light spot semiconductor laser outputs a uniform light spot by coupling the optical fiber composed of the optical fiber cladding 30, the homogenization layer 31 and the quartz layer 32 with the laser emitted by the semiconductor device. The optical output characteristics are further coupled and optimized through the aspheric optical chip. The target aperture can effectively constrain the light spot output size, so that the output circular light spot presents an obvious flat-top light distribution. Since the light spot output by the optical fiber has good uniformity, the optical fiber can be made short, the laser can be miniaturized, and the space occupied is small, which has better application scenarios.

[0038] As described above, the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A spot semiconductor laser, characterized in that: include: A main frame (1), the upper surface of the main frame (1) being sealed by a cover plate (12), a receiving space (10) being formed between the main frame (1) and the cover plate (12), and a launch port (11) being provided at one end of the main frame (1); A semiconductor device (2) is disposed in the accommodation space (10) and is used to emit laser light from a light outlet (20); An optical fiber (3), one end of the optical fiber (3) being connected to the light outlet (20) via a conducting component (9), and the other end of the optical fiber (3) extending upward to one side of the emission outlet (11), a light guide channel (4) being provided between the optical fiber (3) and the emission outlet (11), and the optical fiber (3) comprising an optical fiber cladding (30), a homogenizing layer (31) and a quartz layer (32) sequentially coated from the outside to the inside; An optical lens (5) is located above the light guide channel (4) and at the emission port (11); The laser light emitted from the light outlet (20) of the semiconductor device (2) is injected into the optical fiber (3) through the conducting component (9) for uniform coupling, and then the uniform laser light is emitted from the emission port (11) through the optical lens (5).

2. The spot semiconductor laser according to claim 1, characterized in that: The semiconductor device (2) is also connected to two pins (6), and the two pins (6) extend out of the main frame (1).

3. The spot semiconductor laser according to claim 1, characterized in that: The optical lens (5) is of a non-spherical shape.

4. The spot semiconductor laser according to claim 1, characterized in that: A target aperture (7) is also provided at the emission port (11).

5. The spot semiconductor laser according to claim 1, characterized in that: An optical device (8) is also provided at the light outlet (20).

6. The spot semiconductor laser according to claim 1, characterized in that: The cross section of the quartz layer (32) is hexagonal.

7. The spot semiconductor laser according to claim 1, characterized in that: The material of the homogenization layer (31) is composed of aluminum oxide and silicon.

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