Inverted laser module, preparation method thereof and laser equipment

Abstract

The invention relates to an inverted laser module, a preparation method thereof and laser equipment. The flip laser module comprises: a heat sink; the conductive layer is arranged on the heat sink; the conductive patch layer is arranged on the conductive layer; the laser chip is attached to the conductive patch layer and is electrically connected with the conductive layer through the conductive patch layer; wherein the orthographic projection contour of the part, provided with the conductive patch layer, of the conductive layer on the laser chip shrinks inwards relative to the contour of the laser chip. According to the flip laser module, when the laser chip is mounted on the conductive patch layer, the conductive patch layer does not climb to the side surface of the laser chip, so that the risk of short circuit of the laser chip caused by the fact that the conductive patch layer climbs to the side surface of the laser chip in the mounting process is avoided, and the packaging yield of the flip laser module is improved.

Description

Technical Field

[0001] The present application relates to the technical field of laser equipment, and in particular to a flip-chip laser module, a preparation method thereof, and a laser equipment. Background Art

[0002] With the rapid development of laser technology, laser equipment equipped with laser modules is increasingly widely used in detection, industrial processing, communication, display, medical and other fields. Laser modules usually include laser chips such as Vertical-Cavity Surface-Emitting Laser (VCSEL). In flip-chip laser modules, the laser chip is mounted on the heat sink by means of silver glue or gold-tin sheet, and connected to the heat sink by leads to realize external wiring and power drive. However, during the mounting process of the flip-chip laser module, the silver glue or gold-tin solder easily climbs to the side of the laser chip, causing the laser chip to short-circuit and resulting in poor packaging. Summary of the invention

[0003] Based on this, it is necessary to provide a flip-chip laser module, its preparation method and laser equipment to address the problem that silver glue or gold-tin solder easily climbs to the side of the laser chip during the mounting process of the flip-chip laser module, causing a short circuit in the laser chip.

[0004] A flip-chip laser module, comprising: Heat sink; A conductive layer, disposed on the heat sink; A conductive patch layer, disposed on the conductive layer; A laser chip is attached to the conductive patch layer and electrically connected to the conductive layer through the conductive patch layer; The orthographic projection contour of the portion of the conductive layer where the conductive patch layer is disposed on the laser chip is retracted relative to the contour of the laser chip.

[0005] In the above-mentioned flip-chip laser module, the part of the conductive layer where the conductive patch layer is arranged has an outline of the positive projection on the laser chip that is retracted relative to the outline of the laser chip. Therefore, when the laser chip is mounted on the conductive patch layer, since the conductive patch layer is located on the inner side of the outline of the laser chip, under the squeezing of the laser chip and the conductive layer, the conductive patch layer will not crawl to the side of the laser chip, thereby helping to avoid the risk of the conductive patch layer crawling to the side of the laser chip during the mounting process, causing a short circuit in the laser chip, and helping to improve the packaging yield of the flip-chip laser module. In one embodiment, the laser chip has four sequentially connected side surfaces, the conductive layer has four sequentially connected side surfaces, the four side surfaces of the laser chip correspond to the four side surfaces of the conductive layer, and each side surface of the conductive layer is located inside the corresponding side surface of the laser chip. Thus, the conductive patch layer can be prevented from climbing to the side surface of the laser chip in all directions during the patch process.

[0006] In one embodiment, in the first direction and the second direction, the difference between the size of the conductive layer and the size of the laser chip is greater than 20um and less than or equal to 100um, and the first direction and the second direction are two mutually perpendicular directions on a plane perpendicular to the side of the laser chip. In this way, there can be a sufficient distance between the side of the conductive layer and the side of the laser chip, so that the conductive patch layer is squeezed to the side of the conductive layer and does not climb to the side of the laser chip. At the same time, the size of the conductive layer will not be too small, which is conducive to improving the structural reliability and heat dissipation performance of the flip-chip laser module.

[0007] In one embodiment, the dimensions of the conductive layer in the first direction and the second direction are both less than or equal to 50 um.

[0008] In one embodiment, the conductive layer includes a base and a connecting portion, the base is disposed on the heat sink, the connecting portion is disposed on a side of the base facing away from the heat sink, the side of the connecting portion is retracted relative to the base, and the side of the connecting portion is retracted relative to the side of the laser chip. While providing the connecting portion to prevent the conductive patch layer from climbing to the side of the laser chip during the patch process, by providing a base with a larger length and width on the conductive layer, it is beneficial to improve the heat dissipation efficiency of the conductive layer to the laser chip, thereby improving the overall heat dissipation performance of the flip-chip laser module, and at the same time, it is beneficial to improve the structural reliability of the flip-chip laser module and reduce the difficulty of packaging.

[0009] In one embodiment, the orthographic projection contour of the base on the heat sink is located outside the orthographic projection contour of the laser chip on the heat sink. Thus, the base has sufficient heat dissipation area, which can effectively improve the heat dissipation efficiency of the conductive layer to the laser chip.

[0010] In one embodiment, the thickness of the connecting portion and the base portion are both 20um-100um, thereby improving the structural reliability and heat dissipation performance of the conductive layer and preventing the conductive layer from being too thick and causing the size of the flip-chip laser module to increase.

[0011] In one embodiment, the conductive patch layer includes silver paste or gold-tin solder; and / or, The side of the laser chip facing the conductive layer is the positive electrode of the laser chip, and the side of the laser chip facing away from the conductive layer is the negative electrode of the laser chip. The negative electrode of the laser chip is electrically connected to the heat sink through a conductive element.

[0012] A laser device comprises the flip-chip laser module as described in any one of the above embodiments.

[0013] A method for preparing a flip-chip laser module, comprising: providing a heat sink, wherein a conductive layer is disposed on the heat sink; Disposing a conductive patch layer on a side of the conductive layer facing away from the heat sink; A laser chip is arranged on a side of the conductive patch layer facing away from the conductive layer, wherein an outline of a positive projection of a portion of the conductive layer where the conductive patch layer is arranged on the laser chip is located inside an outline of the laser chip.

[0014] By adopting the above-mentioned method for preparing the flip-chip laser module, since the positive projection outline of the part of the conductive layer where the conductive patch layer is provided on the laser chip is located on the inner side of the outline of the laser chip, when the laser chip is attached to the conductive patch layer, since the conductive patch layers are all located on the inner side of the side of the laser chip, they are not easily squeezed and climbed to the side of the laser chip, thereby reducing the risk of short circuit of the laser chip caused by the patch process, which is beneficial to improving the preparation yield of the flip-chip laser module. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 Schematic diagram of the structure of a flip-chip laser module in some embodiments.

[0016] Figure 2 for Figure 1 The schematic diagram of the structure of some components of the flip-chip laser module is shown.

[0017] Figure 3 for Figure 1 The schematic diagram of the structure of one of the preparation steps of the flip-chip laser module is shown.

[0018] Figure 4 Schematic diagram of the structure of the flip-chip laser module in some other embodiments.

[0019] Figure 5 for Figure 4 The schematic diagram of the structure of some components of the flip-chip laser module is shown.

[0020] Figure 6 The temperature contour distribution diagram of the flip-chip laser module with and without a base in some embodiments.

[0021] Reference numerals: 10. Flip-chip laser module; 11. Heat sink; 12. Conductive layer; 121. Base; 122. Connecting part; 13. Conductive patch layer; 131. Extended structure; 14. Laser chip; 15. Conductive structure; 16. Conductive element. DETAILED DESCRIPTION

[0022] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present application, so the present application is not limited by the specific embodiments disclosed below.

[0023] In the description of the present application, it should be understood that if the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. appear, the orientation or position relationship indicated by these terms is based on the orientation or position relationship shown in the accompanying drawings, which is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application.

[0024] In addition, if the terms "first" or "second" appear, these terms are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the description of this application, if the term "plurality" appears, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0025] In this application, unless otherwise clearly specified and limited, if the terms "installed", "connected", "connected", "fixed" and the like appear, these terms should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integrated connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to the specific circumstances.

[0026] In the present application, unless otherwise clearly specified and limited, if there is a description that a first feature is "above" or "below" a second feature, etc., or similar descriptions appear, it may mean that the first and second features are in direct contact, or that the first and second features are in indirect contact through an intermediate medium. Moreover, the first feature being "above", "above" and "above" the second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. The first feature being "below", "below" and "below" the second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0027] It should be noted that if an element is referred to as being "fixed to" or "disposed on" another element, it may be directly on the other element or there may be a central element. If an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. If any, the terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used in this application are for illustrative purposes only and do not represent the only implementation method.

[0028] See also Figure 1 and Figure 2 , Figure 1 is a schematic diagram of the structure of a flip-chip laser module 10 in some embodiments, Figure 2 It is a schematic diagram of the structure of some components of the flip-chip laser module 10 in some embodiments. The flip-chip laser module 10 provided in the present application is used to emit laser. The flip-chip laser module 10 can be used in laser equipment, for example, installed in the housing of the laser equipment. The laser equipment provided in the present application includes but is not limited to use in the fields of detection, industrial processing, communication, display, medical treatment, etc. The laser equipment may also include other components. For example, when the laser equipment is used in the detection field, the laser equipment may also include a laser sensor element. The flip-chip laser module 10 is used to emit laser to the object to be measured. The laser sensor element is used to receive the laser reflected by the object to be measured, so as to realize the detection function of the object to be measured. The component composition of the laser equipment used in other fields is not limited and can be set according to corresponding needs.

[0029] In some embodiments, the flip-chip laser module 10 includes a heat sink 11, a conductive layer 12, a conductive patch layer 13, a laser chip 14, and a conductive structure 15. The conductive layer 12 is disposed on the heat sink 11, and the conductive layer 12 includes but is not limited to a copper layer disposed on the heat sink 11, or a layer structure of other metal conductive materials. The conductive patch layer 13 is disposed on the side of the conductive layer 12 facing away from the heat sink 11, and the laser chip 14 is attached to the side of the conductive patch layer 13 facing away from the conductive layer 12. The conductive patch layer 13 can adhere the conductive layer 12 and the laser chip 14, and at the same time play an electrical connection role between the laser chip 14 and the conductive layer 12. The conductive patch layer 13 includes but is not limited to any applicable material that can achieve conductivity and attachment, such as silver glue or gold-tin solder. The heat sink 11 can serve as the substrate of the flip-chip laser module 10, and can increase the heat dissipation area, which is conducive to improving the heat dissipation performance of the flip-chip laser module 10. The conductive structure 15 is disposed on the heat sink 11 , and the conductive structure 15 includes but is not limited to a copper layer or other metal conductive material structure disposed on the heat sink 11 .

[0030] The laser chip 14 includes but is not limited to any applicable type of laser such as a vertical-cavity surface-emitting laser (VCSEL). The side of the laser chip 14 facing the conductive layer 12 can be the positive electrode of the laser chip 14, and the side of the laser chip 14 facing away from the conductive layer 12 can be the negative electrode of the laser chip 14. The positive electrode of the laser chip 14 is electrically connected to the conductive layer 12 through the conductive patch layer 13, and the negative electrode can be electrically connected to the conductive structure 15 on the heat sink 11 through a conductive element 16 such as a lead, so that the laser chip 14 can be controlled and driven by energizing the connection between the heat sink 11 and the external circuit.

[0031] Further, in some embodiments, the orthographic projection contour of the portion of the conductive layer 12 provided with the conductive patch layer 13 on the laser chip 14 is retracted relative to the contour of the laser chip 14, that is, the orthographic projection contour of the portion of the conductive layer 12 provided with the conductive patch layer 13 on the laser chip 14 is spaced from the contour of the laser chip 14 and is located inside the contour of the laser chip 14. For example, the portion of the conductive layer 12 provided with the conductive patch layer 13 is roughly in the shape of a square and has four sequentially connected side surfaces, the laser chip 14 is roughly in the shape of a square and has four sequentially connected side surfaces, the four side surfaces of the laser chip 14 correspond to the positions of the four side surfaces of the conductive layer 12 one by one, each side surface of the conductive layer 12 may be roughly parallel to a corresponding side surface of the laser chip 14, and each side surface of the conductive layer 12 is located inside the corresponding side surface of the laser chip 14. In some embodiments, the size of the portion of the conductive layer 12 where the conductive patch layer 13 is disposed in the first direction and the second direction are both smaller than the size of the laser chip 14 in the first direction and the second direction, and the first direction and the second direction are two mutually perpendicular directions on a plane perpendicular to the side of the laser chip 14. For example, the four side surfaces of the laser chip 14 are opposite to each other in pairs, the first direction is parallel to the direction of the line connecting two of the opposite side surfaces, and the second direction is parallel to the direction of the line connecting the other two opposite side surfaces. In the present application, the first direction is taken as the length direction of the laser chip 14, and the second direction is taken as the width direction of the laser chip 14.

[0032] Combination Figure 1 and Figure 3 It is understandable that, in the process of preparing the flip-chip laser module 10 , the conductive layer 12 is firstly arranged on the heat sink 11 , and the conductive patch layer 13 is arranged on the conductive layer 12 , and then the laser chip 14 is arranged on the conductive patch layer 13 .

[0033] In traditional laser modules, the length and width of the conductive layer are usually larger than the laser chip. When attaching the laser chip to the conductive patch layer, the laser chip tends to push the conductive patch layer outward from the laser chip. Since the length and width of the conductive layer are larger than the laser chip, that is, the contour of the conductive layer is located outside the contour of the laser chip, the conductive patch layer squeezed outward from the laser chip tends to climb to the side of the laser chip. Since the PN junction in a flip-chip laser module is usually close to the positive electrode, the side of the laser chip and the back of the conductive layer facing away can be considered to be connected without resistance. During the patch process, when the conductive patch layer climbs to the side of the laser chip, it is easy to cause the conductive patch layer to be connected to the negative electrode of the laser chip, resulting in a short circuit and poor packaging.

[0034] Based on this, in the above-mentioned flip-chip laser module 10 provided by the present application, the part of the conductive layer 12 where the conductive patch layer 13 is arranged has its positive projection contour on the laser chip 14 retracted relative to the contour of the laser chip 14. Therefore, when the laser chip 14 is pasted on the conductive patch layer 13, since the conductive patch layer 13 is located on the inner side of the contour of the laser chip 14, under the compression of the laser chip 14 and the conductive layer 12, the conductive patch layer 13 will not climb to the side of the laser chip 14, thereby helping to avoid the risk of the conductive patch layer 13 climbing to the side of the laser chip 14 during the pasting process, causing the laser chip 14 to short-circuit, and helping to improve the packaging yield of the laser module. Figure 1 and Figure 2 As shown, it can be seen that since the length and width of the portion of the conductive layer 12 where the conductive patch layer 13 is set are smaller than the laser chip 14, when the laser chip 14 squeezes the conductive patch layer 13, the conductive patch layer 13 is not easy to extend to the outside of the laser chip 14, but extends to the side of the conductive layer 12 to form an extension structure 131, which will not cause a short circuit in the laser chip 14 and is beneficial to improving the packaging yield.

[0035] In some embodiments, in the first direction and the second direction, the difference between the size of the conductive layer 12 and the size of the laser chip 14 is greater than 20um, and less than or equal to 100um, for example, it can be 50um. In this way, there can be a sufficient distance between the side of the conductive layer 12 and the side of the laser chip 14, so that the conductive patch layer 13 will not climb to the side of the laser chip 14 when it is squeezed out of the conductive layer 12, and the size of the conductive layer 12 will not be too small, which is conducive to improving the structural reliability of the flip-chip laser module 10 and the heat dissipation performance of the conductive layer 12 to the laser chip 14. In some embodiments, the size of the conductive layer 12 in the first direction and the second direction is less than or equal to 50um. The size of the conductive layer 12 in the first direction can be understood as the length of the conductive layer 12, and the size in the second direction can be understood as the width of the conductive layer 12. The size of the conductive layer 12 in the first direction and the second direction can also be equal. The size of the conductive layer 12 in the first direction and the second direction can both be 25um or 50um.

[0036] Combination Figure 3 and Figure 4 As shown, in other embodiments, the conductive layer 12 includes a base 121 and a connecting portion 122, the base 121 is disposed on the heat sink 11, the connecting portion 122 is disposed on a side of the base 121 facing away from the heat sink 11, and the side of the connecting portion 122 is retracted relative to the base 121, and the side of the connecting portion 122 is retracted relative to the side of the laser chip 14. It can be understood that in Figure 1 and Figure 2In the embodiment shown, the cross-sections of the conductive layer 12 in the third direction perpendicular to the first direction and the second direction may be equal in size, so that the four sides of the conductive layer 12 as a whole are retracted relative to the sides of the laser chip 14, and Figure 4 and Figure 5 In the embodiment shown, the conductive layer 12 has two parts with different lengths and widths in the third direction. The part of the conductive layer 12 where the conductive patch layer 13 is provided can be understood as the connecting portion 122, and the four sides of the conductive layer 12 that are retracted relative to the laser chip 14 can be understood as the four sides of the connecting portion 122. Since the contour of the connecting portion 122 where the conductive patch layer 13 is provided is retracted relative to the contour of the laser chip 14, when the laser chip 14 squeezes the conductive patch layer 13 during the patching process, the conductive patch layer 13 is not easy to extend to the outside of the laser chip 14, and is not easy to climb to the side of the laser chip 14 to cause a short circuit in the laser chip 14. Figure 5 As shown, the conductive patch layer 13 squeezed to the outside of the connection portion 122 easily extends to the side of the connection portion 122 to form an extension structure 131 , but is not easy to climb to the side of the laser chip 14 .

[0037] Furthermore, while providing the connection portion 122 to prevent the conductive patch layer 13 from climbing to the side of the laser chip 14 during the patch process, providing a base portion 121 with a larger length and width on the conductive layer 12 is beneficial to improving the heat dissipation efficiency of the conductive layer 12 to the laser chip 14, thereby improving the overall heat dissipation performance of the flip-chip laser module 10, and also helping to improve the structural reliability of the flip-chip laser module 10 and reduce the difficulty of packaging.

[0038] In some embodiments, the orthographic projection contour of the base 121 on the heat sink 11 is located outside the orthographic projection contour of the laser chip 14 on the heat sink 11, that is, the orthographic projection contour of the laser chip 14 on the base 121 is retracted relative to the contour of the base 121. Thus, the size of the base 121 can be increased, so that the base 121 has a sufficient heat dissipation area, and the heat dissipation efficiency of the conductive layer 12 to the laser chip 14 can be effectively improved, thereby improving the heat dissipation performance of the flip-chip laser module 10.

[0039] In some embodiments, the thickness of the connecting portion 122 and the base 121, that is, the size of the connecting portion 122 and the base 121 in the third direction is 20um-100um. Such a configuration can not only improve the structural reliability and heat dissipation performance of the conductive layer 12, but also help to avoid the conductive layer 12 being too thick and causing the size of the flip-chip laser module 10 to increase.

[0040] Combination Figure 1 , Figure 4 and Figure 6 As shown, Figure 6The left side of the diagram schematically shows the temperature contour distribution diagram of the flip-chip laser module 10 when the conductive layer 12 is not provided with the connecting portion 122 and the base portion 121 of different sizes. Figure 6 The left side can correspond to Figure 1 The temperature contour distribution diagram of the flip-chip laser module 10 in the embodiment shown, Figure 6 The right side of the diagram schematically shows the temperature contour distribution diagram of the flip-chip laser module 10 when the conductive layer 12 is provided with the connecting portion 122 and the base portion 121. Figure 6 The right side of Figure 4 The temperature contour line distribution diagram of the flip-chip laser module 10 is shown. Figure 6 It can be seen that by setting a base 121 and a connecting portion 122 on the conductive layer 12, the heat dissipation performance of the flip-chip laser module 10 is improved by increasing the size of the base 121, and the junction temperature of the laser chip 14 can be reduced by about 4°C-5°C, which can effectively improve the heat dissipation performance of the flip-chip laser module 10 and improve the operating stability and service life of the laser chip 14.

[0041] Combination Figure 1 and Figure 3 As shown, based on the flip-chip laser module 10 described in any of the above embodiments, the present application also provides a method for preparing the flip-chip laser module 10, comprising: A heat sink 11 is provided, on which a conductive layer 12 and a conductive structure 15 are disposed. Both the conductive layer 12 and the conductive structure 15 can be a copper layer disposed on the heat sink 11; A conductive patch layer 13 is disposed on the side of the conductive layer 12 facing away from the heat sink 11. The conductive patch layer 13 includes but is not limited to any suitable conductive adhesive material such as silver glue or gold-tin solder; A laser chip 14 is arranged on the side of the conductive patch layer 13 facing away from the conductive layer 12, wherein the orthographic projection contour of the portion of the conductive layer 12 where the conductive patch layer 13 is arranged on the laser chip 14 is located on the inner side of the contour of the laser chip 14, that is, the orthographic projection contour of the portion of the conductive layer 12 where the conductive patch layer 13 is arranged on the laser chip 14 is retracted relative to the contour of the laser chip 14.

[0042] By adopting the above-mentioned preparation method of the flip-chip laser module 10, since the positive projection contour of the part of the conductive layer 12 where the conductive patch layer 13 is set on the laser chip 14 is located on the inner side of the contour of the laser chip 14, when the laser chip 14 is attached to the conductive patch layer 13, since the conductive patch layer 13 is located on the inner side of the side of the laser chip 14, it is not easy to be squeezed and climb to the side of the laser chip 14, thereby reducing the risk of short circuit of the laser chip 14 during the patch process, which is beneficial to improving the preparation yield of the flip-chip laser module 10.

[0043] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0044] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be construed as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent application shall be subject to the attached claims.

Claims

1. A flip-chip laser module, characterized in that: include: Heat sink; A conductive layer, disposed on the heat sink; A conductive patch layer, disposed on the conductive layer; A laser chip is attached to the conductive patch layer and electrically connected to the conductive layer through the conductive patch layer; The orthographic projection contour of the portion of the conductive layer where the conductive patch layer is disposed on the laser chip is retracted relative to the contour of the laser chip.

2. The flip-chip laser module according to claim 1, characterized in that: The laser chip has four sequentially connected side surfaces, the conductive layer has four sequentially connected side surfaces, the four side surfaces of the laser chip correspond to the four side surfaces of the conductive layer in one-to-one position, and each side surface of the conductive layer is located on the inner side of the corresponding side surface of the laser chip.

3. The flip-chip laser module according to claim 2, characterized in that: In the first direction and the second direction, the difference between the size of the conductive layer and the size of the laser chip is greater than 20um and less than or equal to 100um. The first direction and the second direction are two mutually perpendicular directions on a plane perpendicular to the side of the laser chip.

4. The flip-chip laser module according to claim 3, characterized in that: The dimensions of the conductive layer in the first direction and the second direction are both less than or equal to 50 um.

5. The flip-chip laser module according to claim 1, characterized in that: The conductive layer includes a base and a connecting portion, wherein the base is arranged on the heat sink, the connecting portion is arranged on a side of the base facing away from the heat sink, and a side surface of the connecting portion is retracted relative to the base and the side surface of the connecting portion is retracted relative to a side surface of the laser chip.

6. The flip-chip laser module according to claim 5, characterized in that: The orthographic projection contour of the base on the heat sink is located outside the orthographic projection contour of the laser chip on the heat sink.

7. The flip-chip laser module according to claim 5, characterized in that: The thickness of the connecting portion and the base portion are both 20um-100um.

8. The flip-chip laser module according to any one of claims 1 to 7, characterized in that: The conductive patch layer includes silver paste or gold-tin solder; and / or, The side of the laser chip facing the conductive layer is the positive electrode of the laser chip, and the side of the laser chip facing away from the conductive layer is the negative electrode of the laser chip. The negative electrode of the laser chip is electrically connected to the heat sink through a conductive element.

9. A laser device, characterized in that: It comprises the flip-chip laser module as described in any one of claims 1-8.

10. A method for preparing a flip-chip laser module, characterized in that: include: Providing a heat sink, wherein a conductive layer is disposed on the heat sink; Disposing a conductive patch layer on a side of the conductive layer facing away from the heat sink; A laser chip is arranged on a side of the conductive patch layer facing away from the conductive layer, wherein an outline of a positive projection of a portion of the conductive layer where the conductive patch layer is arranged on the laser chip is located inside an outline of the laser chip.

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