Performance Testing Method and System for Fast Recovery Diode Based on Electron Irradiation

Abstract

The present invention relates to the technical field of diode performance testing, and a method and system for testing the performance of fast recovery diodes based on electron irradiation, including: setting a bias condition range, obtaining a set of fast recovery diodes, obtaining a plurality of experimental groups, sequentially extracting an experimental group from the plurality of experimental groups, and performing the following operations on the extracted experimental group: initializing a test circuit to obtain an initialized circuit, irradiating the fast recovery diode in the initialized circuit and monitoring the initialized circuit during irradiation to obtain temperature data, voltage data, and leakage current data, predicting the service life of the fast recovery diode, obtaining the leakage current increase ratio and the leakage current curve, obtaining a visualized temperature image, obtaining a voltage curve, obtaining a performance measurement report, and completing the performance test of the fast recovery diode based on electron irradiation based on the performance measurement report. The present invention can improve the reliability and stability of fast recovery diodes in a radiation environment.

Description

Technical Field

[0001] The present invention relates to the technical field of diode performance testing, and particularly to a method and system for testing the performance of fast recovery diodes based on electron irradiation. Background Art

[0002] Electron irradiation refers to the process of irradiating a fast recovery diode with a high-energy electron beam. A fast recovery diode is a semiconductor discrete device with good switching characteristics and short reverse recovery time.

[0003] Currently, the performance testing methods for fast recovery diodes mainly focus on conventional electrical performance testing, such as forward conduction characteristic testing, reverse cut-off characteristic testing, etc. These methods mainly focus on the performance of fast recovery diodes in a normal working environment, while relatively few studies have been conducted on performance testing in a radiation environment. A few existing radiation testing methods have problems such as single testing conditions and inability to comprehensively simulate the actual complex radiation environment. In addition, the existing testing methods lack accurate prediction of the service life of diodes in a radiation environment and comprehensive evaluation of operating parameters. Therefore, how to improve the reliability and stability of fast recovery diodes in a radiation environment is an urgent problem to be solved. Summary of the Invention

[0004] The present invention provides a method for testing the performance of fast recovery diodes based on electron irradiation and a computer-readable storage medium, and its main purpose is to improve the reliability and stability of fast recovery diodes in a radiation environment.

[0005] To achieve the above object, a method for testing the performance of fast recovery diodes based on electron irradiation provided by the present invention includes:

[0006] Receiving a diode performance testing instruction, and setting a bias condition range according to the diode performance testing instruction, where the bias condition range includes: an ambient temperature range and an operating voltage range;

[0007] Obtaining a set of fast recovery diodes, and obtaining a plurality of experimental groups based on the bias condition range and the set of fast recovery diodes, where the set of fast recovery diodes includes a plurality of identical fast recovery diodes;

[0008] Sequentially extracting experimental groups from the plurality of experimental groups, and performing the following operations on the extracted experimental groups:

[0009] Extracting the fast recovery diode corresponding to the experimental group, building a test circuit according to the extracted fast recovery diode, and initializing the test circuit to obtain an initialized circuit;

[0010] Set up a pre-built electron irradiation device using preset irradiation parameters to obtain a pre-adjusted electron irradiation device, where the irradiation parameters include: irradiation particle type and irradiation dose gradient;

[0011] Irradiate the fast recovery diode in the initialization circuit using the pre-adjusted electron irradiation device, and monitor the irradiation of the initialization circuit to obtain temperature data, irradiation dose, voltage data, and leakage current data;

[0012] If it is confirmed that the irradiation dose is equal to the preset irradiation particle value and the fast recovery diode is not damaged or burned out, predict the service life of the fast recovery diode;

[0013] Obtain the leakage current increase ratio and leakage current curve based on the leakage current data, obtain the visual temperature image based on the temperature data, and obtain the voltage curve based on the voltage data;

[0014] Evaluate the operating parameters of the fast recovery diode according to the visual temperature image, service life, voltage curve, and leakage current curve to obtain a unit evaluation report;

[0015] Summarize the unit evaluation reports to obtain a set of unit evaluation reports corresponding to multiple experimental groups, and obtain a performance measurement report based on the set of unit evaluation reports;

[0016] Complete the performance test of the fast recovery diode based on electron irradiation based on the performance measurement report.

[0017] Optionally, the obtaining multiple experimental groups based on the bias condition interval and the fast recovery diode set includes:

[0018] Obtain an interval division unit, and use the interval division unit to divide both the ambient temperature interval and the operating voltage interval in the bias condition interval to obtain a divided ambient temperature group and a divided operating voltage group, where the divided ambient temperature group includes multiple ambient temperatures, and the divided operating voltage group includes multiple operating voltages;

[0019] Pair the divided ambient temperature group and the divided operating voltage group to obtain a divided bias condition matrix, where the divided bias condition matrix includes: multiple row vectors, where a row vector includes: an ambient temperature and an operating voltage;

[0020] Set up multiple experimental groups based on the multiple row vectors in the divided bias condition matrix and the fast recovery diode set, where one experimental group corresponds to one fast recovery diode and one row vector.

[0021] Optionally, the obtaining the interval division unit includes:

[0022] Set division groups, and calculate interval division units by using the division groups and a pre-constructed interval unit division formula. The interval unit division formula is as follows:

[0023] ;

[0024] Among them, represents the interval division unit, represents the maximum ambient temperature or maximum operating voltage in the ambient temperature interval or operating voltage interval, represents the minimum ambient temperature or minimum operating voltage in the ambient temperature interval or operating voltage interval, represents the division group, represents a preset weight factor, represents a preset correction term, represents a preset denominator stability compensation amount.

[0025] Optionally, the pairing of the divided ambient temperature groups and the divided operating voltage groups to obtain a division bias condition matrix includes:

[0026] Extract an ambient temperature from the divided ambient temperature groups in sequence, and perform the following operations on all the extracted ambient temperatures:

[0027] Pair the ambient temperature with all the operating voltages in the divided operating voltage groups to obtain a set of division bias condition groups;

[0028] Summarize the set of division bias condition groups to obtain multiple sets of division bias condition groups, construct a blank two-dimensional matrix, and import the multiple sets of division bias condition groups into the blank two-dimensional matrix to obtain a division bias condition matrix. The division bias condition matrix is as follows:

[0029] ;

[0030] Among them, represents the division bias condition matrix, represents the th ambient temperature in the divided ambient temperature group, represents the th operating voltage in the divided operating voltage group, represents the th ambient temperature in the divided ambient temperature group, represents the th operating voltage in the divided operating voltage group, represents a row vector.

[0031] Optionally, irradiating the fast recovery diode in the initialization circuit using a pre-adjusted electron radiation device and monitoring the irradiation of the initialization circuit to obtain temperature data, irradiation dose, voltage data, and leakage current data, including:

[0032] Start the pre-adjusted electron radiation device and record the time when the pre-adjusted electron radiation device is started to obtain the start irradiation time;

[0033] Set a pre-constructed comprehensive sensor using a preset data acquisition frequency to obtain a regulated comprehensive sensor, where the comprehensive sensor includes: a temperature sensor, a voltage sensor, and a current sensor;

[0034] Irradiate and monitor the initial circuit according to the start irradiation time and the regulated comprehensive sensor to obtain an initial comprehensive set and an initial irradiation dose, where the initial comprehensive set includes: initial temperature, initial voltage, and initial current, and the irradiation monitoring includes: temperature monitoring, voltage monitoring, and leakage current detection;

[0035] When the initial irradiation dose is equal to the maximum irradiation dose gradient in the irradiation parameters, turn off the pre-adjusted electron radiation device and record the time when the pre-adjusted electron radiation device is turned off to obtain the end irradiation time;

[0036] Obtain an irradiation time period based on the start irradiation time and the end irradiation time, and obtain irradiation temperature data, irradiation voltage data, irradiation dose, and irradiation leakage current data according to the irradiation time period;

[0037] Perform data processing operations on the irradiation temperature data, irradiation voltage data, and irradiation leakage current data to obtain temperature data, voltage data, and leakage current data.

[0038] Optionally, predicting the service life of the fast recovery diode includes:

[0039] Obtain the unirradiated leakage current, unirradiated reverse recovery time, and reverse recovery time of the fast recovery diode;

[0040] Obtain the leakage current increase ratio and the reverse recovery time change ratio based on the unirradiated leakage current, leakage current data, unirradiated reverse recovery time, and reverse recovery time;

[0041] Predict the service life of the fast recovery diode using a pre-constructed predicted service life formula, the reverse recovery time change ratio, and the leakage current increase ratio, where the predicted service life formula is as follows:

[0042] ;

[0043] Wherein, represents the service life, represents the theoretical service life of the fast recovery diode when not irradiated, represents the natural constant represents the irradiation dose gradient represents the influence coefficient of the irradiation dose gradient on the service life represents the influence coefficient of the increase ratio of leakage current on the service life represents the increase ratio of leakage current represents the influence coefficient of the change ratio of reverse recovery time on the life represents the change ratio of reverse recovery time represents the influence coefficient of the ambient temperature on the service life represents the ambient temperature represents the preset reference temperature represents the influence coefficient of the working voltage on the service life represents the working voltage represents the preset initial voltage

[0044] Optionally, obtaining the increase ratio of leakage current and the change ratio of reverse recovery time based on the unirradiated leakage current, leakage current data, unirradiated reverse recovery time, and reverse recovery time includes:

[0045] Calculating the increase ratio of leakage current according to the unirradiated leakage current and the leakage current data, where the calculation formula of the increase ratio of leakage current is as follows:

[0046] ;

[0047] Wherein, represents the leakage current data represents the preset average leakage current represents the unirradiated leakage current;

[0048] Calculating the change ratio of reverse recovery time based on the unirradiated reverse recovery time and the reverse recovery time, where the calculation formula of the change ratio of reverse recovery time is as follows:

[0049] ;

[0050] Wherein, represents the reverse recovery time represents the preset average reverse recovery time

[0051] Optionally, obtaining the performance measurement report based on the unit evaluation report set includes:

[0052] Sequentially extracting unit evaluation reports from the unit evaluation report set, and performing the following operations on each of the extracted unit evaluation reports:

[0053] Obtain the irradiated particle concentration, irradiation time parameter, experimental group parameter, and service life parameter based on the unit evaluation report;

[0054] If the irradiated particle concentration and the irradiation time parameter are respectively less than the preset concentration parameter and the preset time parameter, then confirm the irradiation time parameter, experimental group parameter, and service life parameter corresponding to the unit evaluation report as safe use condition parameters; otherwise, confirm the irradiation time parameter, experimental group parameter, and service life parameter corresponding to the unit evaluation report as extreme condition parameters;

[0055] Aggregate the safe use condition parameters and the extreme condition parameters respectively to obtain a safe condition report set and an extreme condition report set;

[0056] If there is a service life parameter less than the preset life parameter in the safe condition report set, then extract the safe condition report corresponding to the service life parameter less than the preset life parameter to obtain a to-be-statistical safe group, and count the number of the to-be-statistical safe group to obtain the number of anomalies;

[0057] If the number of anomalies exceeds the preset anomaly threshold, then regard the to-be-statistical safe group as a safe anomaly report group;

[0058] Otherwise, regard the to-be-statistical safe group as a safe normal report group;

[0059] Calculate the extreme life value based on the preset rated life and the pre-constructed life allowance fluctuation coefficient, eliminate the extreme condition reports with service life parameters less than the extreme life value from the extreme condition report set, and aggregate the remaining extreme condition reports to obtain an optimized extreme report set;

[0060] Use the pre-constructed comprehensive irradiation condition scoring formula and the optimized extreme report set to obtain optimized parameters, calculate the optimized parameters using the preset safety factor to obtain an extreme condition use threshold interval, confirm the optimized extreme reports within the extreme condition use threshold interval as high-quality extreme condition reports, and regard the optimized extreme reports not within the extreme condition use threshold interval as failed high-quality extreme condition reports;

[0061] Aggregate the safe normal report group and the high-quality extreme condition reports to obtain an initial recommended parameter report, identify and aggregate the recommended experimental parameter groups in the initial recommended parameter report to obtain a recommended parameter report;

[0062] Aggregate the failed high-quality extreme condition reports, the safe anomaly report group, and the extreme condition reports with service life parameters less than the extreme life value to obtain an invalid parameter report;

[0063] Aggregate the recommended parameter report and the invalid parameter report to obtain a performance test report.

[0064] Optionally, obtaining the optimization parameters by using the pre-constructed comprehensive scoring formula for irradiation conditions and the optimized extreme report set includes:

[0065] Successively extract an optimized extreme report set from the optimized extreme report set, and perform the following operations on each of the extracted optimized extreme reports:

[0066] Evaluate the optimized extreme report by using the pre-constructed comprehensive scoring formula for irradiation conditions to obtain an optimized evaluation value. The comprehensive scoring formula for irradiation conditions is as follows:

[0067] ;

[0068] Wherein, represents the optimized evaluation value, represents a preset proportionality coefficient, represents the irradiation particle concentration, represents the irradiation time parameter, represents the service life parameter;

[0069] Summarize the optimized evaluation values to obtain an optimized evaluation value set, and identify the experimental parameter group of the optimized extreme report corresponding to the maximum optimized evaluation value in the optimized evaluation value set to obtain the optimization parameters.

[0070] To achieve the above object, the present invention also provides a performance test system for fast recovery diodes based on electron irradiation, including:

[0071] A test preparation module for receiving a diode performance test instruction, setting a bias condition interval according to the diode performance test instruction, where the bias condition interval includes: an ambient temperature interval and a working voltage interval, obtaining a set of fast recovery diodes, and obtaining a plurality of experimental groups based on the bias condition interval and the set of fast recovery diodes, where the set of fast recovery diodes includes a plurality of identical fast recovery diodes;

[0072] An experimental preparation module for successively extracting an experimental group from the plurality of experimental groups and performing the following operations on the extracted experimental group: extracting the fast recovery diode corresponding to the experimental group, building a test circuit according to the extracted fast recovery diode, and initializing the test circuit to obtain an initialized circuit, and setting a pre-constructed electron radiation device by using preset irradiation parameters to obtain a pre-adjusted electron radiation device, where the irradiation parameters include: irradiation particle type and irradiation dose gradient;

[0073] A data analysis module is used to irradiate the fast recovery diode in the initialization circuit by using a pre-adjusted electronic radiation device, and monitor the irradiation of the initialization circuit to obtain temperature data, irradiation dose, voltage data and leakage current data. If it is confirmed that the irradiation dose is equal to the preset irradiation particle value and the fast recovery diode is not damaged or burned out, the service life of the fast recovery diode is predicted. The leakage current increase ratio and leakage current curve are obtained based on the leakage current data, the visual temperature image is obtained based on the temperature data, and the voltage curve is obtained based on the voltage data;

[0074] A report generation module is used to evaluate the usage parameters of the fast recovery diode according to the visual temperature image, service life, voltage curve and leakage current curve to obtain a unit evaluation report, summarize the unit evaluation reports to obtain a set of unit evaluation reports corresponding to multiple experimental groups, obtain a performance measurement report based on the set of unit evaluation reports, and complete the performance test of the fast recovery diode based on electron irradiation based on the performance measurement report.

[0075] To solve the above problems, the present invention also provides an electronic device, and the electronic device includes:

[0076] A memory that stores at least one instruction;

[0077] A processor that executes the instructions stored in the memory to implement the above-mentioned performance test method of the fast recovery diode based on electron irradiation.

[0078] To solve the above problems, the present invention also provides a computer-readable storage medium, and at least one instruction is stored in the computer-readable storage medium, and the at least one instruction is executed by a processor in an electronic device to implement the above-mentioned performance test method of the fast recovery diode based on electron irradiation.

[0079] To solve the problems described in the background art, the present invention receives a diode performance test instruction and sets a bias condition range according to the diode performance test instruction. Among them, the bias condition range includes: an ambient temperature range and an operating voltage range. By receiving the diode performance test instruction to set the ambient temperature range and the operating voltage range, the present invention can be closer to various complex environments in the actual application of the fast recovery diode, so that the test results are more valuable for reference, which helps to evaluate the true performance of the diode under different working conditions and obtain a set of fast recovery diodes. Based on the bias condition range and the set of fast recovery diodes, multiple experimental groups are obtained. Among them, the set of fast recovery diodes includes multiple identical fast recovery diodes. By dividing multiple experimental groups based on the bias condition range, the present invention can test the fast recovery diodes under different combinations of ambient temperature and operating voltage, and more comprehensively examine the performance differences of the fast recovery diodes under various conditions. Sequentially extract experimental groups from multiple experimental groups, and perform the following operations on the extracted experimental groups: extract the fast recovery diodes corresponding to the experimental group, build a test circuit according to the extracted fast recovery diodes, and initialize the test circuit to obtain an initialized circuit. The initialization operation of the test circuit by the present invention can eliminate the initial interference and unstable factors in the circuit, make the circuit in a stable state before entering the formal test, and lay a foundation for accurately measuring the performance parameters of the diode in the future. Set a pre-built electron irradiation device with preset irradiation parameters to obtain a pre-adjusted electron irradiation device. Among them, the irradiation parameters include: irradiation particle type and irradiation dose gradient. By setting the irradiation particle type and irradiation dose gradient, the present invention can simulate the actual working conditions of the fast recovery diode in different radiation scenarios, so as to more accurately evaluate the performance changes of the diode in the radiation environment. Use the pre-adjusted electron irradiation device to irradiate the fast recovery diodes in the initialized circuit, and monitor the irradiation of the initialized circuit to obtain temperature data, irradiation dose, voltage data, and leakage current data. If it is confirmed that the irradiation dose is equal to the preset irradiation particle value and the fast recovery diode is not damaged or burned out, then predict the service life of the fast recovery diode. During the irradiation process, the present invention simultaneously monitors temperature, voltage, and leakage current, and can obtain the changes in various performance parameters of the diode under the action of radiation in real time, and timely discover the abnormal fluctuations in the performance of the diode. By monitoring these data simultaneously, the performance changes of the diode in the radiation environment can be comprehensively evaluated from multiple dimensions, avoiding the limitations of single-index evaluation. Based on the leakage current data, obtain the leakage current increase ratio and the leakage current curve. Based on the temperature data, obtain a visual temperature image. Based on the voltage data, obtain a voltage curve. The leakage current increase ratio, the leakage current curve, the visual temperature image, and the voltage curve of the present invention can intuitively show the change trends of various performance indicators of the diode during the irradiation process with respect to time or irradiation dose, which is convenient for researchers to quickly identify the laws and characteristics of performance changes.Evaluate the operating parameters of the fast recovery diode according to the visualized temperature image, service life, voltage curve and leakage current curve to obtain a unit evaluation report. The present invention comprehensively uses various performance index data to predict the service life of the fast recovery diode, which can provide an important reference basis for practical applications, help users reasonably arrange the maintenance and replacement cycles of equipment, reduce the risks and losses caused by the failure of the fast recovery diode, summarize the unit evaluation reports, and obtain a set of unit evaluation reports corresponding to multiple experimental groups. Obtain a performance measurement report based on the set of unit evaluation reports. The present invention generates a performance measurement report based on the set of unit evaluation results, presenting the test results in a standardized and clear form for easy reference by relevant personnel, providing strong technical support for the research, development, production and application of products, and completing the performance test of the fast recovery diode based on electron irradiation based on the performance measurement report. Therefore, the present invention can improve the reliability and stability of the fast recovery diode in a radiation environment. BRIEF DESCRIPTION OF THE DRAWINGS

[0080] Figure 1 FIG. is a schematic flowchart of a method for testing the performance of a fast recovery diode based on electron irradiation provided by an embodiment of the present invention;

[0081] Figure 2 FIG. is a functional block diagram of a system for testing the performance of a fast recovery diode based on electron irradiation provided by an embodiment of the present invention;

[0082] Figure 3 FIG. is a schematic structural diagram of an electronic device for implementing the method for testing the performance of a fast recovery diode based on electron irradiation provided by an embodiment of the present invention.

[0083] DESCRIPTION OF THE REFERENCE NUMERALS:

[0084] 1. Electronic device; 10. Processor; 11. Memory; 12. Bus.

[0085] The realization, functional features and advantages of the object of the present invention will be further described in conjunction with the embodiments with reference to the drawings. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0086] It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0087] An embodiment of the present application provides a method for testing the performance of a fast recovery diode based on electron irradiation. The execution subject of the method for testing the performance of a fast recovery diode based on electron irradiation includes at least one of electronic devices such as a server, a terminal, etc. that can be configured to execute the method provided by the embodiment of the present application. In other words, the method for testing the performance of a fast recovery diode based on electron irradiation can be executed by software or hardware installed on a terminal device or a server device, and the software can be a blockchain platform. The server includes but is not limited to: a single server, a server cluster, a cloud server, or a cloud server cluster, etc.

[0088] Referring to Figure 1 As shown, it is a flowchart of a method for testing the performance of a fast recovery diode based on electron irradiation provided by an embodiment of the present invention. In this embodiment, the method for testing the performance of a fast recovery diode based on electron irradiation includes:

[0089] S1. Receive a diode performance test instruction, and set a bias condition range according to the diode performance test instruction.

[0090] Among them, the bias condition range includes: an ambient temperature range and an operating voltage range. Among them, the ambient temperature range includes: a maximum ambient temperature and a minimum ambient temperature, and the operating voltage range includes: a maximum operating voltage and a minimum operating voltage.

[0091] It should be explained that the diode performance test instruction is initiated by a tester and is an instruction used to start and guide the process of testing the performance of a fast recovery diode. The setting of the bias condition range according to the diode performance test instruction means obtaining a historical bias condition range according to the diode performance test instruction and setting the bias condition range according to the historical bias condition range. The setting of the bias condition range in the embodiment of the present invention is an artificially set range. The ambient temperature range refers to the value range of the test ambient temperature set when testing the performance of a fast recovery diode. The operating voltage range refers to the value range of the voltage applied across the fast recovery diode when testing the performance of the fast recovery diode. The historical bias condition range refers to the bias condition range used when testing the performance of a fast recovery diode in the past time period.

[0092] S2. Obtain a set of fast recovery diodes, and obtain a plurality of experimental groups based on the bias condition range and the set of fast recovery diodes.

[0093] Specifically, among them, the set of fast recovery diodes includes a plurality of identical fast recovery diodes.

[0094] It can be understood that the set of fast recovery diodes is a set composed of a plurality of identical fast recovery diodes.

[0095] Specifically, obtaining multiple experimental groups based on the bias condition interval and the fast recovery diode set includes:

[0096] Obtain an interval division unit, and use the interval division unit to divide both the ambient temperature interval and the operating voltage interval in the bias condition interval to obtain a divided ambient temperature group and a divided operating voltage group. Among them, the divided ambient temperature group includes multiple ambient temperatures, and the divided operating voltage group includes multiple operating voltages;

[0097] Pair the divided ambient temperature group and the divided operating voltage group to obtain a divided bias condition matrix. Among them, the divided bias condition matrix includes: multiple row vectors, where a row vector includes: an ambient temperature and an operating voltage;

[0098] Set multiple experimental groups based on the multiple row vectors in the divided bias condition matrix and the fast recovery diode set, where one experimental group corresponds to one fast recovery diode and one row vector.

[0099] It should be explained that the divided bias condition matrix is a matrix structure obtained by pairing the divided ambient temperature group and the divided operating voltage group. The interval division unit refers to the smallest unit used to divide the ambient temperature interval and the operating voltage interval in the bias condition interval respectively. Exemplarily, assume the interval division unit is 1, and use the interval division unit to divide the operating voltage interval [1, 5] to obtain discrete values (1, 2, 3, 4, 5). The steps for obtaining the interval division unit will be given later.

[0100] Specifically, the obtaining of the interval division unit includes:

[0101] Set a division group, and use the division group and a pre-constructed interval unit division formula to calculate the interval division unit. The interval unit division formula is as follows:

[0102] ;

[0103] Among them, represents the interval division unit, represents the maximum ambient temperature or maximum operating voltage in the ambient temperature interval or operating voltage interval, represents the minimum ambient temperature or minimum operating voltage in the ambient temperature interval or operating voltage interval, represents the division group, represents a preset weight factor, represents a preset correction term, represents a preset denominator stability compensation amount.

[0104] It should be noted that the division group refers to a pre-set number of groups by a person. The division group determines how many parts the environmental temperature range or the working voltage range is divided into. By setting different division groups, the fineness of the division can be adjusted, thereby affecting the number of values in the obtained divided environmental temperature groups and divided working voltage groups. The larger the division group, the finer the division; the smaller the division group, the coarser the division. The weighting factor refers to a preset coefficient used to adjust the size of the interval division unit. When the weighting factor is greater than 1, the interval division unit increases; when the weighting factor is less than 1 and greater than 0, the interval division unit decreases.

[0105] It should be noted that the correction term refers to a preset constant, whose function is to fine-tune the calculation result of the interval division unit, so that the divided values can better reflect the actual situation. The denominator stability compensation amount refers to a preset constant used to ensure the stability of the denominator of the interval unit division formula.

[0106] Exemplarily, when the division group n is equal to 1, if there is no denominator stability compensation amount, the denominator is 1, which will make the calculated interval division unit too large, resulting in an unreasonable division result. Adding the denominator stability compensation amount, such as when the denominator stability compensation amount is equal to 1, the denominator is 2 at this time, and the calculated interval division unit will be more in line with the actual division requirements.

[0107] Specifically, the pairing of the divided environmental temperature groups and the divided working voltage groups to obtain the divided bias condition matrix includes:

[0108] Successively extract an environmental temperature from the divided environmental temperature groups, and perform the following operations on the extracted environmental temperatures:

[0109] Pair the environmental temperature with all the working voltages in the divided working voltage groups to obtain a set of divided bias condition groups;

[0110] Summarize the set of divided bias condition groups to obtain multiple sets of divided bias condition groups, construct a blank two-dimensional matrix, and import the multiple sets of divided bias condition groups into the blank two-dimensional matrix to obtain the divided bias condition matrix, where the divided bias condition matrix is as follows:

[0111] ;

[0112] Among them, represents the divided bias condition matrix, represents the th environmental temperature in the divided environmental temperature groups, represents the th working voltage in the divided working voltage groups, represents the th environmental temperature in the divided environmental temperature groups, represents the th working voltage in the divided working voltage group, and represents a row vector.

[0113] It should be explained that the divided bias condition group set is a set of bias condition combinations obtained by pairing a certain ambient temperature in the divided ambient temperature group with all the working voltages in the divided working voltage group during the process of pairing the divided ambient temperature group and the divided working voltage group. By generating multiple divided bias condition group sets, all possible combinations of ambient temperature and working voltage can be systematically listed, providing a basis for subsequently summarizing and forming a complete divided bias condition matrix.

[0114] Exemplarily, the divided ambient temperature group is , and the divided working voltage group is . When extracting the ambient temperature , pair the ambient temperature with the working voltages in the divided working voltage group to obtain the divided bias condition group set as {( , 5V), ( , 10V)}. When extracting the ambient temperature , the obtained divided bias condition group set is {( , 5V), ( , 10V)}.

[0115] It can be understood that the blank two-dimensional matrix refers to a pre-created two-dimensional matrix that has not been filled with any data. The row vector refers to a row of elements in the divided bias condition matrix, which consists of an ambient temperature and a working voltage.

[0116] S3. Sequentially extract the experimental groups from multiple experimental groups, and perform the following operations on the extracted experimental groups: Extract the fast recovery diodes corresponding to the experimental groups, build a test circuit according to the extracted fast recovery diodes, and initialize the test circuit to obtain an initialized circuit.

[0117] It should be explained that the fast recovery diode is a semiconductor diode with good switching characteristics and short reverse recovery time. The test circuit is a circuit built for testing the performance of the fast recovery diode. The step of building a test circuit according to the extracted fast recovery diodes is: Select a suitable circuit topology structure (such as a rectifier circuit, an inverter circuit, etc.) and select components (power supply, resistors, capacitors, etc.) according to the fast recovery diodes, and connect the components according to the circuit topology structure to build a test circuit.

[0118] Importantly, initializing the test circuit refers to the operation of checking whether each component in the test circuit is correctly connected. The initialized circuit refers to the circuit obtained after performing the circuit initialization operation on the test circuit, ensuring the accuracy and reliability of the test process, and providing a stable and repeatable experimental environment for the performance test of the fast recovery diode.

[0119] S4. Set the pre-built electron radiation device using the preset irradiation parameters to obtain a pre-adjusted electron radiation device, where the irradiation parameters include: the type of irradiation particles and the irradiation dose gradient.

[0120] It should be explained that the electron radiation device refers to a device that can generate and emit radiation, and it can emit radiation particles of different types and doses according to the set irradiation parameters. The pre-adjusted electron radiation device refers to the device obtained after setting the electron radiation device according to the preset irradiation parameters. The type of irradiation particles is the type of radiation particles emitted by the electron radiation device. The types of irradiation particles include: electrons, protons, neutrons, gamma rays, etc. The irradiation dose gradient refers to the preset gradient. By setting the irradiation dose gradient, the performance change law of the fast recovery diode under different irradiation doses can be studied.

[0121] S5. Irradiate the fast recovery diode in the initialized circuit using the pre-adjusted electron radiation device, and monitor the irradiation of the initialized circuit to obtain temperature data, irradiation dose, voltage data, and leakage current data.

[0122] Specifically, the step of irradiating the fast recovery diode in the initialized circuit using the pre-adjusted electron radiation device and monitoring the irradiation of the initialized circuit to obtain temperature data, irradiation dose, voltage data, and leakage current data includes:

[0123] Start the pre-adjusted electron radiation device, and record the time when the pre-adjusted electron radiation device is started to obtain the start irradiation time;

[0124] Set the pre-built comprehensive sensor using the preset data acquisition frequency to obtain a regulated comprehensive sensor, where the comprehensive sensor includes: a temperature sensor, a voltage sensor, and a current sensor;

[0125] According to the start irradiation time and the regulated comprehensive sensor, monitor the irradiation of the initial circuit to obtain an initial comprehensive set and an initial irradiation dose, where the initial comprehensive set includes: initial temperature, initial voltage, and initial current, and the irradiation monitoring includes: temperature monitoring, voltage monitoring, and leakage current detection;

[0126] When the initial irradiation dose is equal to the maximum irradiation dose gradient in the irradiation parameters, turn off the pre-adjusted electron radiation device, and record the time when the pre-adjusted electron radiation device is turned off to obtain the end irradiation time;

[0127] Obtain the irradiation time period based on the start irradiation time and the end irradiation time, and obtain the irradiation temperature data, irradiation voltage data, irradiation dose, and irradiation leakage current data according to the irradiation time period;

[0128] Perform data processing operations on the irradiation temperature data, irradiation voltage data, and irradiation leakage current data to obtain temperature data, voltage data, and leakage current data.

[0129] It should be explained that the start irradiation time refers to the time point recorded when the pre-adjusted electron radiation device is started. The temperature sensor, voltage sensor, and current sensor refer to detection devices that can sense temperature, voltage, and current and convert temperature, voltage, and current into output signals. The initial irradiation dose refers to the irradiation dose accumulated at the start irradiation time during the irradiation monitoring of the fast recovery diode. The initial temperature refers to the temperature value of the fast recovery diode measured by the temperature sensor when starting irradiation monitoring and obtaining the initial comprehensive set of data.

[0130] It should be explained that the initial voltage refers to the voltage value across the fast recovery diode measured by the voltage sensor when obtaining the initial comprehensive set of data. The initial current refers to the leakage current value in the fast recovery diode measured by the current sensor when obtaining the initial comprehensive set of data. The end irradiation time refers to the time point recorded when the pre-adjusted electron radiation device is turned off when the maximum irradiation dose gradient set in the irradiation parameters is reached. The irradiation temperature data, irradiation voltage data, and irradiation leakage current data refer to all temperature data, voltage data, and leakage current data collected by the comprehensive sensor during the irradiation time period. The step of performing data processing operations on the irradiation temperature data, irradiation voltage data, and irradiation leakage current data refers to the operation of denoising the irradiation temperature data, irradiation voltage data, and irradiation leakage current data.

[0131] S6. If it is confirmed that the irradiation dose is equal to the preset irradiation particle value and the fast recovery diode is not damaged or burned out, then predict the service life of the fast recovery diode, obtain the leakage current increase ratio and leakage current curve based on the leakage current data, obtain the visual temperature image based on the temperature data, and obtain the voltage curve based on the voltage data.

[0132] It should be explained that the steps of obtaining the leakage current increase ratio and leakage current curve based on the leakage current data are as follows: construct a rectangular coordinate system with time as the horizontal axis and leakage current value as the vertical axis, and use programming tools and the leakage current data to obtain the leakage current curve. The method of obtaining the leakage current curve using programming tools and the leakage current data in the embodiments of the present invention is the prior art and will not be elaborated here. The steps of obtaining the visual temperature image based on the temperature data and obtaining the voltage curve based on the voltage data are both the prior art and will not be elaborated here.

[0133] Specifically, predicting the service life of the fast recovery diode includes:

[0134] Obtaining the unirradiated leakage current, unirradiated reverse recovery time, and reverse recovery time of the fast recovery diode;

[0135] Obtaining the leakage current increase ratio and reverse recovery time change ratio based on the unirradiated leakage current, leakage current data, unirradiated reverse recovery time, and reverse recovery time;

[0136] Predicting the service life of the fast recovery diode by using a pre - constructed service life prediction formula, reverse recovery time change ratio, and leakage current increase ratio. The service life prediction formula is as follows:

[0137] ;

[0138] Wherein, represents the service life, represents the theoretical service life of the fast recovery diode without irradiation, represents the natural constant, represents the irradiation dose gradient, represents the influence coefficient of the irradiation dose gradient on the service life, represents the influence coefficient of the leakage current increase ratio on the service life, represents the leakage current increase ratio, represents the influence coefficient of the reverse recovery time change ratio on the life, represents the reverse recovery time change ratio, represents the influence coefficient of the ambient temperature on the service life, represents the ambient temperature, represents the preset reference temperature, represents the influence coefficient of the operating voltage on the service life, represents the operating voltage, represents the preset initial voltage.

[0139] It should be explained that obtaining the unirradiated leakage current, unirradiated reverse recovery time, and reverse recovery time of the fast recovery diode means detecting the unirradiated fast recovery diode during the historical detection period to obtain the unirradiated leakage current, unirradiated reverse recovery time, and reverse recovery time of the fast recovery diode. The unirradiated leakage current refers to the current passing through the fast recovery diode when it is in the reverse - biased state without being irradiated by electrons. The unirradiated reverse recovery time refers to the time required for the fast recovery diode to switch from forward conduction to reverse cut - off without being irradiated. The reverse recovery time refers to the time required for the fast recovery diode to switch from forward conduction to reverse cut - off after irradiation.

[0140] Importantly, the service life refers to the length of time that a fast recovery diode can maintain its specified performance under specified operating conditions. The influence coefficient of the irradiation dose gradient on the service life means that the greater the irradiation dose gradient, the shorter the service life of the fast recovery diode. The influence coefficient of the leakage current increase ratio on the service life means that the greater the leakage current increase ratio, the shorter the service life of the fast recovery diode. The influence coefficient of the reverse recovery time change ratio on the service life means that the greater the reverse recovery time change ratio, the shorter the service life of the fast recovery diode.

[0141] It is understandable that the influence coefficient of the ambient temperature on the service life means that the higher the ambient temperature, the shorter the service life of the fast recovery diode. The influence coefficient of the operating voltage on the service life means that when the operating voltage is greater than the initial voltage, the service life of the fast recovery diode is shorter. The reference temperature refers to a pre-set reference temperature. The initial voltage refers to a pre-set voltage.

[0142] Specifically, obtaining the leakage current increase ratio and the reverse recovery time change ratio based on the unirradiated leakage current, leakage current data, unirradiated reverse recovery time, and reverse recovery time includes:

[0143] Calculating the leakage current increase ratio according to the unirradiated leakage current and the leakage current data, where the calculation formula for the leakage current increase ratio is as follows:

[0144] ;

[0145] where represents the leakage current data, represents the preset average leakage current, represents the unirradiated leakage current;

[0146] Calculating the reverse recovery time change ratio based on the unirradiated reverse recovery time and the reverse recovery time, where the calculation formula for the reverse recovery time change ratio is as follows:

[0147] ;

[0148] where represents the reverse recovery time, represents the preset average reverse recovery time.

[0149] It should be explained that the average leakage current refers to the average value of all leakage current data obtained during the historical detection time period. The average reverse recovery time refers to the average value of all reverse recovery times obtained during the historical detection time period.

[0150] S7. Evaluate the usage parameters of the fast recovery diode according to the visualized temperature image, service life, voltage curve and leakage current curve to obtain a unit evaluation report.

[0151] It should be explained that the unit evaluation report refers to the evaluation report obtained after the performance test of the fast recovery diodes in a single experimental group.

[0152] S8. Summarize the unit evaluation reports to obtain a set of unit evaluation reports corresponding to multiple experimental groups, and obtain a performance measurement report based on the set of unit evaluation reports.

[0153] It can be understood that the unit assessment report set is a collection consisting of all unit assessment reports.

[0154] In detail, the obtaining of the performance measurement report based on the unit evaluation report set includes:

[0155] Extract unit assessment reports from the unit assessment report set in sequence, and perform the following operations on each of the extracted unit assessment reports:

[0156] Based on the unit evaluation report, the irradiated particle concentration, irradiation time parameters, experimental group parameters and service life parameters are obtained;

[0157] If the irradiated particle concentration and the irradiation time parameters are respectively less than the preset concentration parameters and the preset time parameters, the irradiation time parameters, the experimental group parameters and the service life parameters corresponding to the unit evaluation report are confirmed as safe use condition parameters; otherwise, the irradiation time parameters, the experimental group parameters and the service life parameters corresponding to the unit evaluation report are confirmed as extreme condition parameters;

[0158] The safe use condition parameters and the extreme condition parameters are summarized respectively to obtain a safe condition report set and an extreme condition report set;

[0159] If there is a service life parameter less than the preset service life parameter in the safety condition report set, extract the safety condition report corresponding to the service life parameter less than the preset service life parameter, obtain the safety group to be counted, count the number of safety groups to be counted, and obtain the number of abnormalities;

[0160] If the number of anomalies exceeds the preset anomaly threshold, the security group to be counted will be used as the security anomaly report group;

[0161] Otherwise, the security group to be counted will be regarded as the security normal report group;

[0162] The extreme life value is calculated based on the preset rated life and the pre-built life allowable fluctuation coefficient, the extreme condition reports whose service life parameters are less than the extreme life value are removed from the extreme condition report set, and the retained extreme condition reports are summarized to obtain an optimized extreme report set;

[0163] Optimize parameters by using a pre-constructed comprehensive scoring formula for irradiation conditions and an optimized extreme report set, calculate the optimized parameters using a preset safety factor to obtain the extreme condition usage threshold range, confirm the optimized extreme reports within the extreme condition usage threshold range as high-quality extreme condition reports, and regard the optimized extreme reports not within the extreme condition usage threshold range as failed high-quality extreme condition reports;

[0164] Summarize the safe normal report group and the high-quality extreme condition reports to obtain an initial recommended parameter report, identify and summarize the recommended experimental parameter groups in the initial recommended parameter report to obtain a recommended parameter report;

[0165] Summarize the failed high-quality extreme condition reports, the safe abnormal report group, and the extreme condition reports with service life parameters less than the extreme life value to obtain an invalid parameter report;

[0166] Summarize the recommended parameter report and the invalid parameter report to obtain a performance test report.

[0167] Importantly, the server refers to a computer system used to store and manage performance test reports. The experimental group parameters refer to different bias conditions in the experimental group. The concentration parameter refers to a preset concentration reference value. The time parameter is a preset time reference value. The safe usage condition parameters refer to the irradiation time parameter, the experimental group parameters, and the service life parameters that are confirmed as safe usage condition parameters when the actual irradiation particle concentration is less than the preset concentration parameter and the actual irradiation time parameter is less than the preset time parameter. The extreme condition parameters are the irradiation time parameter, the experimental group parameters, and the service life parameters corresponding to the unit evaluation report when the irradiation particle concentration in the unit evaluation report is not less than the preset concentration parameter or the irradiation time parameter is not less than the preset time parameter. The safe condition report set is a set composed of all safe condition reports.

[0168] It should be explained that the extreme condition report set is a set composed of all extreme condition reports. The safety group to be counted is a set of safety condition reports extracted from the safety condition report set when there is a situation where the service life parameter is less than the preset life parameter. The number of anomalies refers to the number obtained by counting the reports in the safety group to be counted. The anomaly threshold is a preset value used to determine whether there are too many anomalies in the safety group to be counted. The safety anomaly report group refers to the safety group to be counted when the number of anomalies exceeds the preset anomaly threshold. The safety normal report group refers to the safety group to be counted if the number of anomalies does not exceed the preset anomaly threshold. The rated life is a preset standard value representing the service life that the fast recovery diode should reach under ideal conditions. The life allowance fluctuation coefficient is a preset coefficient used to measure the allowable fluctuation range of the service life of the fast recovery diode relative to the rated life. The calculation formula for calculating the extreme life value based on the preset rated life and the pre-constructed life allowance fluctuation coefficient is as follows:

[0169] ;

[0170] wherein, represents the extreme life value, represents the rated life, represents the life allowance fluctuation coefficient.

[0171] Importantly, the optimization parameter refers to the parameter obtained by evaluating the optimized extreme report set using the comprehensive irradiation condition scoring formula. The extreme condition usage threshold interval is a numerical interval obtained by calculating the optimization parameter using the preset safety factor. The high-quality extreme condition report refers to the report in the optimized extreme report set that is within the extreme condition usage threshold interval. The failed high-quality extreme condition report refers to the report that is not within the extreme condition usage threshold interval. The recommended parameter report refers to the report formed by extracting and summarizing the parameter groups corresponding to the safety normal report group and the high-quality extreme condition reports. The invalid parameter report refers to the report obtained by summarizing the failed high-quality extreme condition reports, the safety anomaly report group, and the extreme condition reports with service life parameters less than the extreme life value.

[0172] It should also be explained that the initial recommended parameter report refers to the report formed by summarizing the safety normal report group and the high-quality extreme condition reports. The recommended experimental parameter group refers to the combination identified and summarized from the initial recommended parameter report. The recommended parameter report is the report obtained by summarizing the recommended experimental parameter group.

[0173] Specifically, the obtaining of the optimization parameter by using the pre-constructed comprehensive irradiation condition scoring formula and the optimized extreme report set includes:

[0174] Extract an optimized extreme report set from the optimized extreme report sets in turn, and perform the following operations on each of the extracted optimized extreme reports:

[0175] Evaluate the optimized extreme report using a pre-constructed comprehensive scoring formula for irradiation conditions to obtain an optimized evaluation value. The comprehensive scoring formula for irradiation conditions is as follows:

[0176] ;

[0177] Wherein, represents the optimized evaluation value, represents a preset proportionality coefficient, represents the irradiation particle concentration, represents the irradiation time parameter, represents the service life parameter;

[0178] Summarize the optimized evaluation values to obtain an optimized evaluation value set, identify the experimental parameter group of the optimized extreme report corresponding to the largest optimized evaluation value in the optimized evaluation value set, and obtain the optimized parameters.

[0179] It should be explained that the optimized extreme report set is a set composed of all optimized extreme reports. The optimized evaluation value is a numerical value calculated by the comprehensive scoring formula for irradiation conditions and is used to evaluate the quality of a single optimized extreme report. The proportionality coefficient refers to a preset constant. The irradiation particle concentration refers to the number of irradiation particles contained in a unit volume during the irradiation experiment of the fast recovery diode. The irradiation time parameter refers to the duration of irradiation of the fast recovery diode. The service life parameter refers to the length of time that the fast recovery diode can work normally in the experimental group. The optimized evaluation value set is a set composed of all optimized evaluation values.

[0180] It should be noted that the greater the irradiation particle concentration and the longer the irradiation time parameter, the easier it is for the fast recovery diode to be damaged and burned out, and thus the shorter the service life parameter.

[0181] In the embodiments of the present invention, when the irradiation particle concentration is greater, the irradiation time parameter is longer, and the service life parameter is shorter, the score of the optimized evaluation value is higher. Further, the embodiments of the present invention consider that the higher the extreme degree of the experiment, the less likely or less suitable the fast recovery diode is to be used for a long time under the corresponding experimental parameter group conditions.

[0182] Furthermore, in the embodiments of the present invention, the extreme degree of the electron irradiation experiment is quantified by the irradiated particle concentration, irradiation time parameter, and service life parameter. Therefore, by extracting and identifying the experimental parameter group corresponding to the largest optimization evaluation value in the optimization evaluation value set, the experimental parameter group that can be found has the highest extreme degree of the experiment. Therefore, the optimization parameters should also include all parameters set during the experiment, including but not limited to irradiation time, irradiation concentration, ambient temperature, voltage, etc. On this basis, by adjusting the optimization parameters with a safety factor, the extreme condition usage threshold range for safely using the fast recovery diode can be found. For example, the largest irradiation concentration in the extreme condition usage threshold range is 80% of the irradiation concentration in the optimization parameters.

[0183] S9. Complete the performance test of the fast recovery diode based on electron irradiation according to the performance measurement report.

[0184] It should be explained that the performance measurement report is a comprehensive report generated from the recommended parameter report and the invalid parameter report, reflecting the overall performance of the fast recovery diode set, providing a comprehensive performance evaluation result for users, and guiding the selection and use of diodes.

[0185] To solve the problems described in the background art, the present invention receives a diode performance test instruction and sets a bias condition range according to the diode performance test instruction. Among them, the bias condition range includes: an ambient temperature range and an operating voltage range. By receiving the diode performance test instruction to set the ambient temperature range and the operating voltage range, the present invention can be closer to various complex environments in the actual application of the fast recovery diode, so that the test results are more valuable for reference, which helps to evaluate the true performance of the diode under different working conditions and obtain a set of fast recovery diodes. Based on the bias condition range and the set of fast recovery diodes, multiple experimental groups are obtained. Among them, the set of fast recovery diodes includes multiple identical fast recovery diodes. By dividing multiple experimental groups based on the bias condition range, the present invention can test the fast recovery diodes under different combinations of ambient temperature and operating voltage, and more comprehensively investigate the performance differences of the fast recovery diodes under various conditions. Sequentially extract experimental groups from multiple experimental groups, and perform the following operations on the extracted experimental groups: extract the fast recovery diodes corresponding to the experimental group, build a test circuit according to the extracted fast recovery diodes, and initialize the test circuit to obtain an initialized circuit. The initialization operation of the test circuit by the present invention can eliminate the initial interference and unstable factors in the circuit, make the circuit in a stable state before entering the formal test, and lay a foundation for accurately measuring the performance parameters of the diode in the follow-up. Set a pre-built electron irradiation device with preset irradiation parameters to obtain a pre-adjusted electron irradiation device. Among them, the irradiation parameters include: irradiation particle type and irradiation dose gradient. By setting the irradiation particle type and irradiation dose gradient, the present invention can simulate the actual working conditions of the fast recovery diode in different radiation scenarios, so as to more accurately evaluate the performance changes of the diode in the radiation environment. Use the pre-adjusted electron irradiation device to irradiate the fast recovery diodes in the initialized circuit, and monitor the irradiation of the initialized circuit to obtain temperature data, irradiation dose, voltage data and leakage current data. If it is confirmed that the irradiation dose is equal to the preset irradiation particle value and the fast recovery diode is not damaged or burned out, then predict the service life of the fast recovery diode. During the irradiation process, the present invention simultaneously monitors the temperature, voltage and leakage current, can obtain the changes of various performance parameters of the diode under the action of radiation in real time, and timely discovers the abnormal fluctuations of the diode performance. By monitoring these data at the same time, the performance changes of the diode in the radiation environment can be comprehensively evaluated from multiple dimensions, avoiding the limitations of single-index evaluation. Obtain the leakage current increase ratio and leakage current curve based on the leakage current data, obtain a visual temperature image based on the temperature data, and obtain a voltage curve based on the voltage data. The leakage current increase ratio, leakage current curve, visual temperature image and voltage curve of the present invention can intuitively display the change trends of various performance indicators of the diode during the irradiation process with respect to time or irradiation dose, which is convenient for researchers to quickly identify the laws and characteristics of performance changes.The use parameters of the fast recovery diode are evaluated according to the visualized temperature image, service life, voltage curve and leakage current curve to obtain a unit evaluation report. The present invention comprehensively predicts the service life of the fast recovery diode based on various performance index data, which can provide an important reference basis for practical applications, help users reasonably arrange the maintenance and replacement cycles of equipment, reduce the risks and losses caused by the failure of the fast recovery diode, summarize the unit evaluation reports, and obtain a unit evaluation report set corresponding to multiple experimental groups. Based on the unit evaluation report set, a performance measurement report is obtained. The present invention generates a performance measurement report based on the unit evaluation result set, presenting the test results in a standardized and clear form, facilitating the access and reference of relevant personnel, and providing strong technical support for the research, development, production and application of products. Based on the performance measurement report, the performance test of the fast recovery diode based on electron irradiation is completed. Therefore, the present invention can improve the reliability and stability of the fast recovery diode in a radiation environment.

[0186] As Figure 2 shown, it is a functional module diagram of a performance test system for a fast recovery diode based on electron irradiation provided by an embodiment of the present invention.

[0187] The performance test system 100 for a fast recovery diode based on electron irradiation according to the present invention can be installed in an electronic device. According to the functions achieved, the performance test system 100 for a fast recovery diode based on electron irradiation can include a test preparation module 101, an experiment preparation module 102, a data analysis module 103 and a report generation module 104. The modules in the present invention can also be referred to as units, which refer to a series of computer program segments that can be executed by a processor of an electronic device and can complete fixed functions, and are stored in the memory of the electronic device;

[0188] The test preparation module 101 is configured to receive a diode performance test instruction, set a bias condition range according to the diode performance test instruction, where the bias condition range includes: an ambient temperature range and a working voltage range, obtain a set of fast recovery diodes, and obtain multiple experimental groups based on the bias condition range and the set of fast recovery diodes, where the set of fast recovery diodes includes multiple identical fast recovery diodes;

[0189] The experiment preparation module 102 is configured to sequentially extract experimental groups from multiple experimental groups and perform the following operations on the extracted experimental groups: extract the fast recovery diodes corresponding to the experimental groups, build a test circuit according to the extracted fast recovery diodes, and initialize the test circuit to obtain an initialized circuit, and set a pre-built electron radiation device with preset irradiation parameters to obtain a pre-adjusted electron radiation device, where the irradiation parameters include: irradiation particle type and irradiation dose gradient;

[0190] The data analysis module 103 is configured to irradiate the fast recovery diode in the initialization circuit by using a pre-adjusted electron radiation device, and monitor the irradiation of the initialization circuit to obtain temperature data, irradiation dose, voltage data, and leakage current data. If it is confirmed that the irradiation dose is equal to the preset irradiation particle value and the fast recovery diode is not damaged or burned out, the service life of the fast recovery diode is predicted. The leakage current increase ratio and the leakage current curve are obtained based on the leakage current data, the visual temperature image is obtained based on the temperature data, and the voltage curve is obtained based on the voltage data.

[0191] The report generation module 104 is configured to evaluate the usage parameters of the fast recovery diode according to the visual temperature image, service life, voltage curve, and leakage current curve to obtain a unit evaluation report, summarize the unit evaluation reports to obtain a set of unit evaluation reports corresponding to multiple experimental groups, obtain a performance measurement report based on the set of unit evaluation reports, and complete the performance test of the fast recovery diode based on electron irradiation based on the performance measurement report.

[0192] Specifically, each module in the performance test system 100 of the fast recovery diode based on electron irradiation in the embodiment of the present invention adopts the same technical means as those Figure 1 described in the performance test method of the fast recovery diode based on electron irradiation above, and can produce the same technical effects, which will not be elaborated here.

[0193] As Figure 3 shown, it is a schematic structural diagram of an electronic device for implementing the performance test method of the fast recovery diode based on electron irradiation provided by an embodiment of the present invention.

[0194] The electronic device 1 may include a processor 10, a memory 11, and a bus 12, and may further include a computer program stored in the memory 11 and executable on the processor 10, such as a performance test method program of the fast recovery diode based on electron irradiation.

[0195] Among them, the memory 11 includes at least one type of readable storage medium, and the readable storage medium includes flash memory, mobile hard disk, multimedia card, card-type memory (such as SD or DX memory, etc.), magnetic memory, magnetic disk, optical disk, etc. In some embodiments, the memory 11 may be an internal storage unit of the electronic device 1, such as the mobile hard disk of the electronic device 1. In some other embodiments, the memory 11 may also be an external storage device of the electronic device 1, such as a plug-in mobile hard disk, a Smart Media Card (SMC), a Secure Digital (SD) card, a Flash Card, etc. equipped on the electronic device 1. Further, the memory 11 also includes the internal storage unit of the electronic device 1 and also includes an external storage device. The memory 11 can not only be used to store application software installed in the electronic device 1 and various types of data, such as the code of the program for the performance test method of fast recovery diodes based on electron irradiation, etc., but also be used to temporarily store the data that has been output or will be output.

[0196] In some embodiments, the processor 10 may be composed of integrated circuits. For example, it may be composed of a single packaged integrated circuit, or may be composed of multiple integrated circuits with the same or different functions, including a combination of one or more Central Processing Units (CPUs), microprocessors, digital processing chips, graphics processors, and various control chips, etc. The processor 10 is the control core (Control Unit) of the electronic device, connecting various components of the entire electronic device through various interfaces and lines, and by running or executing programs or modules stored in the memory 11 (such as the program for the performance test method of fast recovery diodes based on electron irradiation, etc.), and calling the data stored in the memory 11, to execute various functions of the electronic device 1 and process data.

[0197] The bus 12 may be a Peripheral Component Interconnect (PCI) bus or an Extended Industry Standard Architecture (EISA) bus, etc. This bus 12 can be divided into an address bus, a data bus, a control bus, etc. The bus 12 is set to realize the connection and communication between the memory 11 and at least one processor 10, etc.

[0198] Figure 3 Only the electronic device with components is shown. Those skilled in the art can understand that, Figure 3The structure shown does not constitute a limitation on the electronic device 1, and may include fewer or more components than shown, or combine certain components, or have a different component arrangement.

[0199] For example, although not shown, the electronic device 1 may further include a power source (such as a battery) for powering each component. Preferably, the power source may be logically connected to the at least one processor 10 through a power management device, so as to implement functions such as charge management, discharge management, and power consumption management through the power management device. The power source may also include any components such as one or more DC or AC power sources, a recharge device, a power failure detection circuit, a power converter or inverter, a power status indicator, etc. The electronic device 1 may also include various sensors, a Bluetooth module, a Wi-Fi module, etc., which will not be elaborated here.

[0200] Furthermore, the electronic device 1 may further include a network interface. Optionally, the network interface may include a wired interface and / or a wireless interface (such as a WI-FI interface, a Bluetooth interface, etc.), which is generally used to establish a communication connection between the electronic device 1 and other electronic devices.

[0201] Optionally, the electronic device 1 may further include a user interface. The user interface may be a display (Display), an input unit (such as a keyboard (Keyboard)). Optionally, the user interface may also be a standard wired interface or a wireless interface. Optionally, in some embodiments, the display may be an LED display, a liquid crystal display, a touch liquid crystal display, and an OLED (Organic Light-Emitting Diode) toucher, etc. Among them, the display may also be appropriately referred to as a display screen or a display unit, which is used to display the information processed in the electronic device 1 and to display a visual user interface.

[0202] The program of the method for testing the performance of a fast recovery diode based on electron irradiation stored in the memory 11 of the electronic device 1 is a combination of multiple instructions. When running in the processor 10, it can implement:

[0203] Receive a diode performance test instruction, and set a bias condition range according to the diode performance test instruction, where the bias condition range includes: an ambient temperature range and an operating voltage range;

[0204] Obtain a set of fast recovery diodes, and obtain multiple experimental groups based on the bias condition range and the set of fast recovery diodes, where the set of fast recovery diodes includes the same multiple fast recovery diodes;

[0205] Extract experimental groups from multiple experimental groups in sequence, and perform the following operations on the extracted experimental groups:

[0206] Extract the fast recovery diodes corresponding to the experimental group, build a test circuit according to the extracted fast recovery diodes, and initialize the test circuit to obtain an initialized circuit;

[0207] Set the pre-built electron irradiation device with preset irradiation parameters to obtain a pre-adjusted electron irradiation device, where the irradiation parameters include: irradiation particle type and irradiation dose gradient;

[0208] Irradiate the fast recovery diodes in the initialized circuit with the pre-adjusted electron irradiation device, and monitor the irradiation of the initialized circuit to obtain temperature data, irradiation dose, voltage data, and leakage current data;

[0209] If it is confirmed that the irradiation dose is equal to the preset irradiation particle value and the fast recovery diodes are not damaged or burned out, predict the service life of the fast recovery diodes;

[0210] Obtain the leakage current increase ratio and leakage current curve based on the leakage current data, obtain a visual temperature image based on the temperature data, and obtain a voltage curve based on the voltage data;

[0211] Evaluate the usage parameters of the fast recovery diodes according to the visual temperature image, service life, voltage curve, and leakage current curve to obtain a unit evaluation report;

[0212] Summarize the unit evaluation reports to obtain a set of unit evaluation reports corresponding to multiple experimental groups, and obtain a performance measurement report based on the set of unit evaluation reports;

[0213] Complete the performance test of the fast recovery diodes based on electron irradiation based on the performance measurement report.

[0214] Specifically, for the specific implementation method of the above instructions by the processor 10, reference may be made to Figures 1 to 3 the description of the relevant steps in the corresponding embodiments, which will not be elaborated here.

[0215] Furthermore, if the modules / units integrated in the electronic device 1 are implemented in the form of software functional units and sold or used as independent products, they can be stored in a computer-readable storage medium. The computer-readable storage medium can be volatile or non-volatile. For example, the computer-readable medium can include: any entity or device capable of carrying the computer program code, recording medium, USB flash drive, mobile hard disk, magnetic disk, optical disc, computer memory, read-only memory (ROM, Read-Only Memory).

[0216] The present invention also provides a computer-readable storage medium, where the readable storage medium stores a computer program, and when the computer program is executed by the processor of the electronic device, it can implement:

[0217] Receive the performance test instruction of the receiving diode, and set the bias condition range according to the diode performance test instruction, where the bias condition range includes: the ambient temperature range and the operating voltage range;

[0218] Obtain a set of fast recovery diodes, and obtain multiple experimental groups based on the bias condition range and the set of fast recovery diodes, where the set of fast recovery diodes includes multiple identical fast recovery diodes;

[0219] Extract the experimental groups from the multiple experimental groups in sequence, and perform the following operations on the extracted experimental groups:

[0220] Extract the fast recovery diodes corresponding to the experimental group, build a test circuit according to the extracted fast recovery diodes, and initialize the test circuit to obtain an initialized circuit;

[0221] Set the pre-built electron irradiation device with the preset irradiation parameters to obtain a pre-adjusted electron irradiation device, where the irradiation parameters include: the type of irradiation particles and the irradiation dose gradient;

[0222] Irradiate the fast recovery diodes in the initialized circuit with the pre-adjusted electron irradiation device, and monitor the irradiation of the initialized circuit to obtain temperature data, irradiation dose, voltage data, and leakage current data;

[0223] If it is confirmed that the irradiation dose is equal to the preset irradiation particle value and the fast recovery diode is not damaged or burned out, predict the service life of the fast recovery diode;

[0224] Obtain the leakage current increase ratio and the leakage current curve based on the leakage current data, obtain the visual temperature image based on the temperature data, and obtain the voltage curve based on the voltage data;

[0225] Evaluate the operating parameters of the fast recovery diode according to the visual temperature image, service life, voltage curve, and leakage current curve to obtain a unit evaluation report;

[0226] Summarize the unit evaluation reports to obtain a set of unit evaluation reports corresponding to the multiple experimental groups, and obtain a performance measurement report based on the set of unit evaluation reports;

[0227] Complete the performance test of the fast recovery diode based on electron irradiation based on the performance measurement report.

[0228] In several embodiments provided by the present invention, it should be understood that the disclosed devices, systems, and methods can be implemented in other ways. For example, the system embodiments described above are only illustrative, and there may be other division methods in actual implementation.

[0229] The module described as a separation component may or may not be physically separated. The component shown as a module may or may not be a physical unit, that is, it may be located in one place or distributed to multiple network units. Some or all of the modules can be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0230] In addition, in each embodiment of the present invention, each functional module can be integrated in a processing unit, or each unit can exist physically alone, or two or more units can be integrated in one unit. The above integrated unit can be implemented in the form of hardware or in the form of a combination of hardware and software functional modules.

[0231] For those skilled in the art, it is obvious that the present invention is not limited to the details of the above exemplary embodiments, and without departing from the spirit or basic characteristics of the present invention, the present invention can be implemented in other specific forms.

[0232] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and not to limit them. Although the present invention has been described in detail with reference to the preferred embodiments, those of ordinary skill in the art should understand that the technical solutions of the present invention can be modified or equivalently replaced without departing from the spirit and scope of the technical solutions of the present invention.

Claims

1. A performance test method for a fast recovery diode based on electron irradiation, characterized in that, The method includes: Receiving a diode performance test instruction, and setting a bias condition range according to the diode performance test instruction, where the bias condition range includes: an ambient temperature range and an operating voltage range; Obtaining a set of fast recovery diodes, and obtaining a plurality of experimental groups based on the bias condition range and the set of fast recovery diodes, where the set of fast recovery diodes includes a plurality of identical fast recovery diodes; Sequentially extracting an experimental group from the plurality of experimental groups, and performing the following operations on the extracted experimental group: Extracting the fast recovery diode corresponding to the experimental group, building a test circuit according to the extracted fast recovery diode, and initializing the test circuit to obtain an initialized circuit; Setting a pre-built electron irradiation device with preset irradiation parameters to obtain a pre-adjusted electron irradiation device, where the irradiation parameters include: an irradiation particle type and an irradiation dose gradient; Irradiating the fast recovery diode in the initialized circuit with the pre-adjusted electron irradiation device, and performing irradiation monitoring on the initialized circuit to obtain temperature data, irradiation dose, voltage data, and leakage current data; If it is confirmed that the irradiation dose is equal to the preset irradiation particle value and the fast recovery diode is not damaged or burned out, then predict the service life of the fast recovery diode; Wherein, the formula for predicting the service life is as follows: ； Among them, represents the service life, represents the theoretical service life of the fast recovery diode before irradiation, represents the natural constant, represents the irradiation dose gradient, represents the influence coefficient of the irradiation dose gradient on the service life, represents the influence coefficient of the leakage current increase ratio on the service life, represents the leakage current increase ratio, represents the influence coefficient of the reverse recovery time change ratio on the life, represents the reverse recovery time change ratio, represents the influence coefficient of the ambient temperature on the service life, represents the ambient temperature, represents the preset reference temperature, represents the influence coefficient of the working voltage on the service life, represents the working voltage, represents the preset initial voltage; The calculation formula for the increase ratio of leakage current is as follows: ； Among them, represents the leakage current data, represents the average value of all leakage current data obtained during the historical detection time period, represents the non-irradiated leakage current; The calculation formula for the change ratio of reverse recovery time is as follows: ； Among them, represents the reverse recovery time, represents the average value of all reverse recovery times obtained during the historical detection time period; Obtaining an increase ratio of leakage current and a leakage current curve based on the leakage current data, obtaining a visual temperature image based on the temperature data, and obtaining a voltage curve based on the voltage data; Evaluating the usage parameters of the fast recovery diode according to the visual temperature image, service life, voltage curve, and leakage current curve to obtain a unit evaluation report; Summarizing the unit evaluation reports to obtain a set of unit evaluation reports corresponding to the plurality of experimental groups, and obtaining a performance measurement report based on the set of unit evaluation reports; Completing the performance test of the fast recovery diode based on electron irradiation based on the performance measurement report.

2. The method for testing the performance of a fast recovery diode based on electron irradiation according to claim 1, characterized in that The obtaining a plurality of experimental groups based on the bias condition range and the set of fast recovery diodes includes: Obtaining an interval division unit, and using the interval division unit to divide both the ambient temperature range and the operating voltage range in the bias condition range to obtain a divided ambient temperature group and a divided operating voltage group, where the divided ambient temperature group includes a plurality of ambient temperatures, and the divided operating voltage group includes a plurality of operating voltages; Pairing the divided ambient temperature group and the divided operating voltage group to obtain a divided bias condition matrix, where the divided bias condition matrix includes: a plurality of row vectors, where a row vector includes: an ambient temperature and an operating voltage; Setting a plurality of experimental groups based on the plurality of row vectors in the divided bias condition matrix and the set of fast recovery diodes, where one experimental group corresponds to one fast recovery diode and one row vector.

3. The performance testing method of the fast recovery diode based on electron irradiation according to claim 2, wherein The obtaining the interval division unit includes: Setting a division group, and calculating the interval division unit using the division group and a pre-built interval unit division formula, where the interval unit division formula is as follows: ； Among them, represents an interval division unit, represents the maximum ambient temperature or maximum operating voltage in the ambient temperature interval or operating voltage interval, represents the minimum ambient temperature or minimum operating voltage in the ambient temperature interval or operating voltage interval, represents the division group, represents a preset weighting factor, represents a preset correction term, represents a preset denominator stability compensation amount.

4. The method for testing the performance of a fast recovery diode based on electron irradiation according to claim 3, wherein The pairing the divided ambient temperature group and the divided operating voltage group to obtain a divided bias condition matrix includes: Extract an ambient temperature from the divided ambient temperature groups in sequence, and perform the following operations on the extracted ambient temperatures: Pair the ambient temperature with all the operating voltages in the divided operating voltage groups to obtain a set of divided bias condition groups; Summarize the set of divided bias condition groups to obtain multiple sets of divided bias condition groups, construct a blank two-dimensional matrix, and import the multiple sets of divided bias condition groups into the blank two-dimensional matrix to obtain a divided bias condition matrix, where the divided bias condition matrix is shown as follows: ； Among them, represents the partition bias condition matrix, represents the th ambient temperature in the partitioned ambient temperature group, represents the th operating voltage in the partitioned operating voltage group, represents the th ambient temperature in the partitioned ambient temperature group, represents the th operating voltage in the partitioned operating voltage group, represents a row vector.

5. The performance testing method of the fast recovery diode based on electron irradiation according to claim 4, wherein Irradiate the fast recovery diode in the initialization circuit using a pre-adjusted electron radiation device, and perform irradiation monitoring on the initialization circuit to obtain temperature data, irradiation dose, voltage data, and leakage current data, including: Start the pre-adjusted electron radiation device and record the time when the pre-adjusted electron radiation device is started to obtain the start irradiation time; Set a pre-constructed comprehensive sensor using a preset data acquisition frequency to obtain a regulated comprehensive sensor, where the comprehensive sensor includes: a temperature sensor, a voltage sensor, and a current sensor; Perform irradiation monitoring on the initial circuit based on the start irradiation time and the regulated comprehensive sensor to obtain an initial comprehensive set and an initial irradiation dose, where the initial comprehensive set includes: an initial temperature, an initial voltage, and an initial current, and the irradiation monitoring includes: temperature monitoring, voltage monitoring, and leakage current detection; When the initial irradiation dose is equal to the maximum irradiation dose gradient in the irradiation parameters, turn off the pre-adjusted electron radiation device and record the time when the pre-adjusted electron radiation device is turned off to obtain the end irradiation time; Obtain an irradiation time period based on the start irradiation time and the end irradiation time, and obtain irradiation temperature data, irradiation voltage data, irradiation dose, and irradiation leakage current data according to the irradiation time period; Perform data processing operations on the irradiation temperature data, irradiation voltage data, and irradiation leakage current data to obtain temperature data, voltage data, and leakage current data.

6. The performance testing method of the fast recovery diode based on electron irradiation according to claim 5, wherein, Obtain a performance measurement report based on the unit evaluation report set, including: Extract unit evaluation reports from the unit evaluation report set in sequence, and perform the following operations on the extracted unit evaluation reports: Obtain an irradiation particle concentration, an irradiation time parameter, an experimental group parameter, and a service life parameter based on the unit evaluation report; If the irradiation particle concentration and the irradiation time parameter are respectively less than a preset concentration parameter and a preset time parameter, then confirm the irradiation time parameter, the experimental group parameter, and the service life parameter corresponding to the unit evaluation report as safe use condition parameters, otherwise, confirm the irradiation time parameter, the experimental group parameter, and the service life parameter corresponding to the unit evaluation report as extreme condition parameters; Summarize the safe use condition parameters and the extreme condition parameters respectively to obtain a safe condition report set and an extreme condition report set; If there is a service life parameter less than a preset life parameter in the safe condition report set, then extract the safe condition report corresponding to the service life parameter less than the preset life parameter to obtain a to-be-statistic safe group, and count the number of the to-be-statistic safe groups to obtain the number of anomalies; If the number of anomalies exceeds a preset anomaly threshold, then regard the to-be-statistic safe group as a safe anomaly report group; Otherwise, regard the to-be-statistic safe group as a safe normal report group; Calculate the extreme life value based on the preset rated life and the pre-built life allowance fluctuation coefficient, remove the extreme condition reports with service life parameters less than the extreme life value from the extreme condition report set, and summarize the remaining extreme condition reports to obtain an optimized extreme report set; Obtain optimized parameters using the pre-built comprehensive irradiation condition scoring formula and the optimized extreme report set, calculate the optimized parameters using the preset safety factor to obtain the extreme condition usage threshold interval, confirm the optimized extreme reports within the extreme condition usage threshold interval as high-quality extreme condition reports, and regard the optimized extreme reports not within the extreme condition usage threshold interval as failed high-quality extreme condition reports; Summarize the safe normal report group and the high-quality extreme condition reports to obtain an initial recommended parameter report, identify and summarize the recommended experimental parameter groups in the initial recommended parameter report to obtain a recommended parameter report; Summarize the failed high-quality extreme condition reports, the safe abnormal report group, and the extreme condition reports with service life parameters less than the extreme life value to obtain an invalid parameter report; Summarize the recommended parameter report and the invalid parameter report to obtain a performance test report.

7. The method for testing the performance of a fast recovery diode based on electron irradiation according to claim 6, characterized in that The obtaining of the optimized parameters using the pre-built comprehensive irradiation condition scoring formula and the optimized extreme report set includes: Successively extract an optimized extreme report set from the optimized extreme report set, and perform the following operations on each of the extracted optimized extreme reports: Evaluate the optimized extreme report using the pre-built comprehensive irradiation condition scoring formula to obtain an optimized evaluation value, where the comprehensive irradiation condition scoring formula is as follows: ； Among them, represents the optimized evaluation value, represents the preset proportionality coefficient, represents the irradiated particle concentration, represents the irradiation time parameter, represents the service life parameter; Summarize the optimized evaluation values to obtain an optimized evaluation value set, identify the experimental parameter group of the optimized extreme report corresponding to the largest optimized evaluation value in the optimized evaluation value set to obtain the optimized parameters.

8. A system using the method for testing the performance of a fast recovery diode based on electron irradiation as described in claim 1, characterized in that, The system includes: A test preparation module for receiving a diode performance test instruction, setting a bias condition interval according to the diode performance test instruction, where the bias condition interval includes: an ambient temperature interval and a working voltage interval, obtaining a fast recovery diode set, and obtaining a plurality of experimental groups based on the bias condition interval and the fast recovery diode set, where the fast recovery diode set includes the same plurality of fast recovery diodes; An experiment preparation module for successively extracting an experimental group from the plurality of experimental groups and performing the following operations on the extracted experimental group: extracting the fast recovery diode corresponding to the experimental group, building a test circuit according to the extracted fast recovery diode, and initializing the test circuit to obtain an initialized circuit, and setting a pre-built electron radiation device using the preset irradiation parameters to obtain a pre-adjusted electron radiation device, where the irradiation parameters include: irradiation particle type and irradiation dose gradient; The data analysis module is used to irradiate the fast recovery diode in the initialization circuit by using a pre-adjusted electron radiation device, and monitor the irradiation of the initialization circuit to obtain temperature data, irradiation dose, voltage data and leakage current data. If it is confirmed that the irradiation dose is equal to the preset irradiation particle value and the fast recovery diode is not damaged or burned out, the service life of the fast recovery diode is predicted, the leakage current increase ratio and the leakage current curve are obtained based on the leakage current data, the visual temperature image is obtained based on the temperature data, and the voltage curve is obtained based on the voltage data; The report generation module is used to evaluate the usage parameters of the fast recovery diode according to the visual temperature image, service life, voltage curve and leakage current curve to obtain a unit evaluation report, summarize the unit evaluation reports to obtain a set of unit evaluation reports corresponding to multiple experimental groups, obtain a performance measurement report based on the set of unit evaluation reports, and complete the performance test of the fast recovery diode based on electron irradiation based on the performance measurement report.

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