Temperature adjusting system and plasma processing system

Abstract

The invention discloses a temperature adjusting system which comprises a first section, a second section and a connecting part. The first section includes a first temperature adjustment circuit and a first housing in which the first temperature adjustment circuit is housed, and the first temperature adjustment circuit includes a first heat exchanger configured to be capable of heat exchange with a first temperature adjustment medium. The second section includes a first container and a first pump in a first circulation system, and a second housing in which the first container and the first pump are housed. The first circulation system is configured so as to be able to circulate a first temperature adjustment medium in a first flow path in a first component of the plasma processing apparatus. The connection part is a part of the first circulation system, is disposed between the first section and the second section, and is connected between the first pump and the first heat exchanger.

Description

Technical Field

[0001] Illustrative embodiments of the present invention relate to temperature regulation systems and plasma processing systems. Background Art

[0002] Patent Document 1 listed below describes that, in a plasma processing apparatus, a temperature control medium is circulated through a flow path in a substrate support portion that supports a substrate using a cooling unit, thereby controlling the temperature of a substrate.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2001-44176 Summary of the invention

[0006] Technical problem to be solved by the invention

[0007] The present invention provides a technique for reducing the size of units constituting a temperature adjustment system in a plasma processing system.

[0008] Technical solutions for solving technical problems

[0009] In an exemplary embodiment, a temperature control system is provided. The temperature control system includes a first section, a second section, and a connection portion. The first section includes a first temperature control circuit and a first shell. The first temperature control circuit includes a first heat exchanger configured to be able to perform heat exchange with a first temperature control medium. The first shell contains the first temperature control circuit therein. The second section includes a first container, a first pump, and a second shell. The first container and the first pump are included in a first circulation system, which is configured to enable the first temperature control medium to circulate in a first flow path in a first component of a plasma processing device. The second shell contains the first container and the first pump therein. In the first circulation system, the first container is connected between the first flow path and the first pump, and the first heat exchanger is connected between the first pump and the first flow path. The connection portion is a part of the first circulation system, arranged between the first section and the second section, and connected between the first pump and the heat exchanger.

[0010] Effects of the Invention

[0011] According to an exemplary embodiment, a technique for reducing the size of units constituting a temperature adjustment system in a plasma processing system is provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a diagram for explaining a configuration example of a plasma processing system.

[0013] Figure 2It is a diagram for explaining a configuration example of a capacitive coupling type plasma processing apparatus.

[0014] Figure 3 This is a diagram schematically showing a temperature control system according to an exemplary embodiment.

[0015] Figure 4 This is a diagram schematically showing a temperature control system according to another exemplary embodiment.

[0016] Figure 5 This is a diagram schematically showing a temperature control system according to still another exemplary embodiment.

[0017] Figure 6 This is a cross-sectional view showing an upper electrode as an example of the second member in the temperature control system according to still another exemplary embodiment.

[0018] Figure 7 This is a diagram schematically showing a temperature control system according to still another exemplary embodiment. DETAILED DESCRIPTION

[0019] Hereinafter, various exemplary embodiments will be described in detail with reference to the accompanying drawings. In addition, in each of the drawings, the same reference numerals are given to the same or corresponding parts.

[0020] Figure 1 : is a diagram for illustrating a structural example of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing device 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing device 1 is an example of a substrate processing device. The plasma processing device 1 includes a plasma processing chamber 10, a substrate support portion 11, and a plasma generating portion 12. The plasma processing chamber 10 has a plasma processing space. In addition, the plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to the gas supply portion 20 described later, and the gas exhaust port is connected to the exhaust system 40 described later. The substrate support portion 11 is arranged in the plasma processing space and has a substrate supporting surface for supporting a substrate.

[0021] The plasma generating section 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be a capacitively coupled plasma (CCP: Capacitively Coupled Plasma), an inductively coupled plasma (ICP: Inductively Coupled Plasma), an ECR plasma (Electron-Cyclotron-Resonance Plasma), a helicon wave excited plasma (HWP: Helicon Wave Plasma) or a surface wave plasma (SWP: Surface Wave Plasma), etc. In addition, various types of plasma generating sections including an AC (Alternating Current: Alternating Current) plasma generating section and a DC (Direct Current: Direct Current) plasma generating section may also be used. In one embodiment, the AC signal (AC electric power) used in the AC plasma generating section has a frequency in the range of 100kHz to 10GHz. Therefore, the AC signal includes an RF (Radio Frequency: High Frequency) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 100kHz to 150MHz.

[0022] The control unit 2 processes computer executable commands that enable the plasma processing device 1 to perform various processes described in the present invention. The control unit 2 can be configured to control the various elements of the plasma processing device 1 to perform the various processes described herein. In one embodiment, a part or all of the control unit 2 can be included in the plasma processing device 1. The control unit 2 can include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is implemented, for example, by a computer 2a. The processing unit 2a1 can be configured to perform various control actions by reading a program from the storage unit 2a2 and executing the read program. The program can be stored in the storage unit 2a2 in advance, or it can be obtained via a medium when necessary. The obtained program is stored in the storage unit 2a2, and is read and executed from the storage unit 2a2 by the processing unit 2a1. The medium can be various storage media readable by the computer 2a, or it can be a communication line connected to the communication interface 2a3. The processing unit 2a1 can be a CPU (Central Processing Unit: central processing unit). The storage unit 2a2 may include a RAM (Random Access Memory), a ROM (Read Only Memory), a HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing device 1 via a communication line such as a LAN (Local Area Network).

[0023] Hereinafter, a configuration example of a capacitive coupling type plasma processing apparatus will be described as an example of the plasma processing apparatus 1 . Figure 2 It is a diagram for explaining a configuration example of a capacitive coupling type plasma processing apparatus.

[0024] A capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. In addition, the plasma processing apparatus 1 includes a substrate support unit 11 and a gas introduction unit. The gas introduction unit is configured to be able to introduce at least one processing gas into the plasma processing chamber 10. The gas introduction unit includes a shower head 13. The substrate support unit 11 is disposed in the plasma processing chamber 10. The shower head 13 is disposed above the substrate support unit 11. In one embodiment, the shower head 13 constitutes at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the shower head 13, the side wall 10a of the plasma processing chamber 10, and the substrate support unit 11. The plasma processing chamber 10 is grounded. The shower head 13 and the substrate support unit 11 are electrically insulated from the shell of the plasma processing chamber 10.

[0025] The substrate support portion 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 when viewed from above. The substrate W is arranged on the central region 111a of the main body 111, and the ring assembly 112 is arranged on the annular region 111b of the main body 111 in a manner of surrounding the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also referred to as a substrate support surface for supporting the substrate W, and the annular region 111b is also referred to as a ring support surface for supporting the ring assembly 112.

[0026] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive component. The conductive component of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is arranged on the base 1110. The electrostatic chuck 1111 includes a ceramic component 1111a and an electrostatic electrode 1111b arranged in the ceramic component 1111a. The ceramic component 1111a has a central area 111a. In one embodiment, the ceramic component 1111a also has an annular area 111b. In addition, other components surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck and an annular insulating component, may also have an annular area 111b. In this case, the ring assembly 112 may be arranged on the annular electrostatic chuck or the annular insulating component, or on both the electrostatic chuck 1111 and the annular insulating component. In addition, at least one RF / DC electrode coupled to the RF power supply 31 and / or DC power supply 32 described later may also be arranged in the ceramic component 1111a. In this case, at least one RF / DC electrode functions as a lower electrode. In the case where the bias RF signal and / or DC signal described later is supplied to at least one RF / DC electrode, the RF / DC electrode is also referred to as a bias electrode. In addition, the conductive component of the base 1110 and at least one RF / DC electrode may also function as multiple lower electrodes. In addition, the electrostatic electrode 1111b may function as a lower electrode. Therefore, the substrate support portion 11 includes at least one lower electrode.

[0027] The ring assembly 112 includes one or more ring components. In one embodiment, the one or more ring components include one or more edge rings and at least one cover ring. The edge ring is formed of a conductive material or an insulating material, and the cover ring is formed of an insulating material.

[0028] In addition, the substrate support portion 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112 and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow path 1110a or a combination thereof. A heat transfer fluid such as salt water or gas flows in the flow path 1110a. In one embodiment, the flow path 1110a is formed in the base 1110, and one or more heaters are arranged in the ceramic part 1111a of the electrostatic chuck 1111. In addition, the substrate support portion 11 may also include a heat transfer gas supply portion configured to supply a heat transfer gas to the gap between the back side of the substrate W and the central area 111a.

[0029] The shower head 13 is configured to be able to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b and a plurality of gas introduction ports 13c. The processing gas supplied to the gas supply port 13a is introduced into the plasma processing space 10s from the plurality of gas introduction ports 13c through the gas diffusion chamber 13b. In addition, the shower head 13 includes at least one upper electrode. In addition, in addition to the shower head 13, the gas introduction unit may also include one or more side gas injection units (SGI: Side Gas Injector) installed in one or more openings formed in the side wall 10a.

[0030] The gas supply unit 20 may also include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one processing gas from the corresponding gas source 21 to the shower head 13 via the corresponding flow controller 22. Each flow controller 22 may also include a mass flow controller or a pressure-controlled flow controller. The gas supply unit 20 may also include at least one flow modulation device for modulating or pulsing the flow of at least one processing gas.

[0031] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. Thus, plasma is formed from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generating unit 12. In addition, by supplying a bias RF signal to at least one lower electrode, a bias potential can be generated on the substrate W, and the ion components in the formed plasma can be attracted to the substrate W.

[0032] In one embodiment, the RF power supply 31 includes a first RF generator 31a and a second RF generator 31b. The first RF generator 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit, and is configured to generate a generation source RF signal (generation source RF electric power) for plasma generation. In one embodiment, the generation source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generator 31a may also be configured to generate a plurality of generation source RF signals having different frequencies. The generated one or more generation source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0033] The second RF generating unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit, and is configured to generate a bias RF signal (bias RF electric power). The frequency of the bias RF signal may be the same as or different from the frequency of the generating source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the generating source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100kHz to 60MHz. In one embodiment, the second RF generating unit 31b may also be configured to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In addition, in various embodiments, at least one of the generating source RF signal and the bias RF signal may also be pulsed.

[0034] In addition, the power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generating unit 32a and a second DC generating unit 32b. In one embodiment, the first DC generating unit 32a is connected to at least one lower electrode and is configured to generate a first DC signal. The generated first DC signal is applied to at least one lower electrode. In one embodiment, the second DC generating unit 32b is connected to at least one upper electrode and is configured to generate a second DC signal. The generated second DC signal is applied to at least one upper electrode.

[0035] In various embodiments, the first and second DC signals may also be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulse may have a pulse waveform of a rectangle, a trapezoid, a triangle, or a combination thereof. In one embodiment, a waveform generator for generating a sequence of voltage pulses from a DC signal is connected between the first DC generator 32a and at least one lower electrode. Therefore, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. In the case where the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulse may have a positive polarity or a negative polarity. In addition, the sequence of voltage pulses may also include one or more positive polarity voltage pulses and one or more negative polarity voltage pulses in one cycle. In addition, the first and second DC generators 32a, 32b may be provided in addition to the RF power supply 31, or the first DC generator 32a may be provided instead of the second RF generator 31b.

[0036] The exhaust system 40 can be connected to the gas exhaust port 10e provided at the bottom of the plasma processing chamber 10, for example. The exhaust system 40 can also include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s can be adjusted by the pressure regulating valve. The vacuum pump can include a turbomolecular pump, a dry pump, or a combination thereof.

[0037] Hereinafter, various exemplary embodiments of temperature control systems that can be employed in a plasma processing system will be described.

[0038] [First embodiment]

[0039] Figure 3 FIG. 1 is a diagram schematically showing a temperature control system according to an exemplary embodiment. Figure 3 In FIG. 1 , arrows indicate the flow of a temperature control medium M1 (first temperature control medium) or the like. The temperature control medium M1 may be a refrigerant such as brine. Figure 3 2 shows a structure of a temperature control system TS1 in a plasma processing system 100. In the plasma processing system 100, a plasma processing apparatus 1 includes a first component 110. The first component 110 may be a substrate support portion 11 for supporting a substrate W, for example.

[0040] like Figure 3As shown, the temperature control system TS1 includes a first section 41, a second section 42 and a connection portion 43. The first section 41 includes a temperature control circuit 51 (first temperature control circuit) and a shell 41c (first shell). The temperature control circuit 51 is configured to be able to adjust the temperature of the temperature control medium M1 to, for example, a first temperature T1. The temperature control circuit 51 can be configured to include a device for adjusting the temperature of the temperature control medium M1, for example, configured to include a heat exchanger 51a (first heat exchanger). The temperature control circuit 51 is housed in the shell 41c. In one embodiment, the temperature control circuit 51 can be a refrigeration circuit. In addition, the heat exchanger 51a can be an evaporator.

[0041] The second section 42 includes a circulation section 61 (first circulation section) and a shell 42c (second shell). The circulation section 61 is a part of the first circulation system. The circulation section 61 is housed in a shell 42c different from the shell 41c. The first circulation system is configured to enable the temperature regulating medium M1 to circulate in a first flow path (e.g., flow path 1110a) in the first component 110. The circulation section 61 may also include a container 61a (first container) in which the temperature regulating medium M1 is stored and a pump 61b (first pump) for circulating the temperature regulating medium M1. In the first circulation system, the container 61a is connected between one end (outlet) of the first flow path and the pump 61b, and the heat exchanger 51a is connected between the pump 62b and the other end (inlet) of the first flow path. The second section 42 may also include a heater 61c. The heater 61c is provided in the container 61a to heat the temperature regulating medium M1. The heater 61c is connected to a heater power supply 61d and generates heat using the electric power from the heater power supply 61d.

[0042] The connection part 43 connects the temperature control circuit 51 and the circulation part 61 in a manner that the temperature control medium M1 can flow between them. The connection part 43 is a part of the first circulation system, and is connected between the pump 61b and the heat exchanger 51a. The connection part 43 is arranged between the first section 41 and the second section 42. The connection part 43 can be a joint that connects the pipe extending from the first section 41 and the pipe extending from the second section. The connection part 43 can also connect the pipe extending from the pump 61b and the pipe extending from the three-way valve 51b described later.

[0043] In one embodiment, the first section 41 is provided on a layer (Floor) Fc. The second section 42 is provided on a layer Fb different from the layer Fc. The layer Fc may be a layer below the layer Fb. In addition, the layer Fb may be the same layer as the layer Fa on which the plasma processing device 1 is provided, or may be a layer different therefrom. In one example, the layer Fb is a layer between the layer Fc and the layer Fa on which the plasma processing device 1 is provided.

[0044] In one embodiment, the first section may include, in addition to the heat exchanger 51a, a three-way valve 51b, a regenerator 51c, a compressor 51d, a cascade condenser 51e, an expansion valve 51f, a compressor 51g, a condenser 51h and an expansion valve 51i.

[0045] The first port of the three-way valve 51b is connected to the connection portion 43 via a pipe. The second port of the three-way valve 51b is connected to the inlet of the heat exchanger 51a for the temperature control medium M1. The pipe extending from the third port of the three-way valve 51b merges with the pipe connecting the outlet of the heat exchanger 51a for the temperature control medium M1 and the inlet of the first flow path.

[0046] The heat exchanger 51a is configured to be able to adjust the temperature of the temperature control medium M1 by heat exchange between the temperature control medium M1 and the temperature control medium Ma. The heat exchanger 51a, the regenerator 51c, the compressor 51d, the cascade condenser 51e and the expansion valve 51f form a circuit for circulating the temperature control medium Ma in the heat exchanger 51a. The outlet of the heat exchanger 51a for the temperature control medium Ma is connected to the first inlet of the regenerator 51c. The first outlet of the regenerator 51c is connected to the inlet of the cascade condenser 51e for the temperature control medium Ma via the compressor 51d. The outlet of the cascade condenser 51e for the temperature control medium Ma is connected to the second inlet of the regenerator 51c. The second outlet of the regenerator 51c is connected to the inlet of the heat exchanger 51a for the temperature control medium Ma via the expansion valve 51f.

[0047] The cascade condenser 51e is configured to be able to adjust the temperature of the temperature control medium Ma by heat exchange between the temperature control medium Ma and the temperature control medium Mb. The cascade condenser 51e, the compressor 51g, the condenser 51h and the expansion valve 51i form a loop for circulating the temperature control medium Mb in the cascade condenser 51e. The outlet of the cascade condenser 51e for the temperature control medium Mb is connected to the inlet of the condenser 51h for the temperature control medium Mb via the compressor 51g. The outlet of the condenser 51h for the temperature control medium Mb is connected to the inlet of the cascade condenser 51e for the temperature control medium Mb via the expansion valve 51i. The condenser 51h is configured to be able to adjust the temperature of the temperature control medium Mb by heat exchange between the temperature control medium Mb and the temperature control medium Mc.

[0048] In the temperature control system TS1, the temperature control medium M1 is supplied to the first flow path (e.g., flow path 1110a) in the first component 110 after its temperature is adjusted to, for example, the first temperature T1 in the temperature control loop 51 of the first section 41. When the temperature control medium M1 cools the first component 110, the temperature of the temperature control medium M1 rises by ΔT1 from the first temperature T1. The temperature control medium M1 whose temperature has risen by ΔT1 returns to the temperature control loop 51 from the circulation section 61 of the second section 42. Then, after its temperature is adjusted to the first temperature T1 in the temperature control loop 51, the temperature control medium M1 is supplied to the first flow path (e.g., flow path 1110a) in the first component 110 again.

[0049] In the temperature control system TS1, the second section 42 constituting a part of the first circulation system is separated from the first section 41 including the temperature control circuit 51. Therefore, the size of the unit constituting the temperature control system TS1 can be reduced. In addition, in the temperature control system TS1, the second section 42 can be set in a layer Fb different from the layer Fc in which the first section 41 is set. Therefore, the installation area of ​​the unit of the temperature control system TS1 in the layer Fc can be reduced. In one example, the installation area of ​​the temperature control system TS1 in the layer Fc can be reduced to less than 60%, less than 50%, or less than 40% of the installation area of ​​the conventional temperature control system.

[0050] In addition, the temperature control system TS1 is divided into the first section 41 and the second section 42, so the degree of freedom of design is high. In addition, the second section 42 can be arranged directly below the plasma processing device 1, so the temperature control system TS1 can not only shorten the pipeline (piping) connecting the second section 42 and the plasma processing device 1, but also has excellent temperature control efficiency. In addition, when an abnormality occurs in one of the first section 41 and the second section 42, only the section where the abnormality occurs can be replaced, so the recovery work when the abnormality occurs can be shortened.

[0051] [Second embodiment]

[0052] Next, another exemplary embodiment will be described. Figure 4 FIG. 1 is a diagram schematically showing a temperature control system according to another exemplary embodiment. Figure 4 In FIG. 1 , arrows indicate the flow of the temperature control medium M1 and the temperature control medium M2 (second temperature control medium). The temperature control medium M2 may be a refrigerant such as salt water. The temperature control medium M2 may be the same refrigerant as the temperature control medium M1. Figure 41 shows the structure of the temperature control system TS2 in the plasma processing system 100B. In the plasma processing system 100B, the plasma processing apparatus 1 includes a first component 110. The first component 110 may be, for example, a substrate support portion 11 for supporting a substrate W. Hereinafter, the plasma processing system 100B will be described from the perspective of differences from the plasma processing system 100.

[0053] The temperature regulating system TS2 includes a first section 41, a second section 42B and a connection portion 43. The first section 41 and the connection portion 43 are respectively the same as the first section 41 and the connection portion 43 of the temperature regulating system TS1.

[0054] The temperature control system TS2 may further include a switch 70. The switch 70 may also be configured to be able to switch the temperature control medium circulating in the first flow path (e.g., flow path 1110a) between the temperature control medium M1 and the temperature control medium M2. In one embodiment, the switch 70 may also include valves 71 to 74. Each of the valves 71 to 74 is, for example, an on-off valve. The valve 71 is connected between the outlet of the heat exchanger 51a for the temperature control medium M1 and the inlet of the first flow path. The valve 72 is connected between the outlet of the first flow path and the container 61a.

[0055] In the temperature control system TS2, the second section 42B is different from the second section 42 of the temperature control system TS1 in that it further includes a temperature control circuit 52 (second temperature control circuit) and a circulation unit 62 (second circulation unit). In the temperature control system TS2, the second section 42B may further include a three-way valve 52b. The three-way valve 52b is accommodated in the housing 42c.

[0056] The temperature regulating circuit 52 is configured to be able to regulate the temperature of the temperature regulating medium M2 to, for example, a second temperature T2. The temperature regulating circuit 52 may be configured to include a device for regulating the temperature of the temperature regulating medium M2, for example, a heat exchanger 52a (second heat exchanger). The second temperature T2 may be higher than the first temperature T1. The heat exchanger 52a is configured to be able to regulate the temperature of the temperature regulating medium M2 by heat exchange between the temperature regulating medium M2 and the temperature regulating medium Md. In one embodiment, the heat exchanger 52a may also be a condenser.

[0057] The circulation unit 62 is a part of the second circulation system. The circulation unit 62 is housed in the housing 42c together with the circulation unit 61 and the temperature control circuit 52. The second circulation system is configured to circulate the temperature control medium M2 adjusted to the second temperature T2 in the first flow path (e.g., flow path 1110a). The circulation unit 62 may also include a container 62a (second container) storing the temperature control medium M2 therein and a pump 62b (second pump) for circulating the temperature control medium M2.

[0058] In the second circulation system, the container 62a is connected between the outlet of the first flow path and the pump 62b, and the heat exchanger 52a is connected between the pump 62b and the inlet of the first flow path. The outlet of the heat exchanger 52a for the temperature regulating medium M2 can also be connected to the inlet of the first flow path via the valve 73. The outlet of the first flow path can also be connected to the container 62a via the valve 74. In one embodiment, the pump 62b can also be connected to the inlet of the heat exchanger 52a for the temperature regulating medium M2 and the first port of the three-way valve 52b. The outlet of the heat exchanger 52a for the temperature regulating medium M2 can also be connected to the second port of the three-way valve 52b. In addition, the third port of the three-way valve 52b can also be connected to the inlet of the first flow path.

[0059] The second section 42B may further include a heater 62c. The heater 62c is disposed in the container 62a to heat the temperature regulating medium M2. The heater 62c is connected to a heater power supply 62d and generates heat using the electric power from the heater power supply 62d.

[0060] In the temperature control system TS2, the temperature control medium M2 is supplied to the first flow path (e.g., flow path 1110a) in the first component 110 after its temperature is adjusted to, for example, the second temperature T2 in the temperature control loop 52 of the second section 42B. When the temperature control medium M2 cools the first component 110, the temperature of the temperature control medium M2 rises by ΔT2 from the second temperature T2. The temperature control medium M2 whose temperature has risen by ΔT2 returns to the temperature control loop 52 from the circulation section 62 of the second section 42B. Then, after the temperature of the temperature control medium M2 is adjusted to the second temperature T2 in the temperature control loop 52, it is supplied to the first flow path (e.g., flow path 1110a) in the first component 110 again.

[0061] In addition, the switch 70 may also be configured to be able to switch the temperature control medium supplied to the first flow path from the temperature control medium M1 to the temperature control medium M2 or from the temperature control medium M2 to the temperature control medium M1. Alternatively, the switch 70 may also be configured to be able to supply the temperature control medium obtained by mixing the temperature control medium M1 and the temperature control medium M2 at a specified ratio to the first flow path. In this case, the temperature control medium M1 and the temperature control medium M2 may be the same temperature control medium.

[0062] In the temperature control system TS2, similarly to the temperature control system TS1, the second section 42B is separated from the first section 41. Therefore, the size of the unit constituting the temperature control system TS2 can be reduced. In addition, similarly to the temperature control system TS1, the temperature control system TS2 can set the second section 42B in a layer Fb different from the layer Fc in which the first section 41 is set. Therefore, similarly to the temperature control system TS1, the temperature control system TS2 can reduce the setting area of ​​the unit of the temperature control system TS2 in the layer Fc. In addition, similarly to the temperature control system TS1, the temperature control system TS2 can increase the degree of freedom of design, improve the temperature control efficiency, and shorten the recovery operation in the event of an abnormality.

[0063] [Third Embodiment]

[0064] Next, still another exemplary embodiment will be described. Figure 5 FIG. 1 is a diagram schematically showing a temperature control system according to another exemplary embodiment. Figure 5 In FIG. 1 , arrows indicate the flow of the temperature control medium M1, the temperature control medium M2, and the temperature control medium M3 (third temperature control medium). The temperature control medium M3 may be a refrigerant such as brine. The temperature control medium M3 may be the same refrigerant as the temperature control medium M1 or the temperature control medium M2.

[0065] Figure 5 1 shows the structure of the temperature control system TS3 in the plasma processing system 100C. In the plasma processing system 100C, the plasma processing apparatus 1 includes a first component 110 and a second component 120. The first component 110 may be, for example, a substrate support portion 11 for supporting a substrate W. In addition, the second component 120 may also be an upper electrode of the plasma processing apparatus 1. Hereinafter, the plasma processing system 100C will be described from the perspective of differences from the plasma processing system 100B.

[0066] Figure 6 FIG. 2 is a cross-sectional view showing an upper electrode as an example of a second component in a temperature control system according to another exemplary embodiment. Figure 6 As shown, the second component 120 may also be an upper electrode included in the shower head 13. The upper electrode has a flow path 130a inside it. In one embodiment, the flow path 130a is a second flow path in the second component 120. The upper electrode may also include a top plate 131 and a support body 132. The top plate 131 divides the plasma processing space 10s from above. The support body 132 is disposed on the top plate 131. The support body 132 provides a flow path 130a and at least one gas diffusion chamber 13b inside it. The top plate 131 and the support body 132 provide a plurality of gas inlet ports 13c. The flow path 130a may also be provided in the support body 132.

[0067] like Figure 5 As shown, the temperature regulating system TS3 includes a first section 41, a second section 42C and a connection portion 43. The first section 41 and the connection portion 43 are respectively the same as the first section 41 and the connection portion 43 of the temperature regulating system TS2.

[0068] In the temperature control system TS3, the second section 42C is different from the second section 42B of the temperature control system TS2 in that it further includes a temperature control circuit 53 (third temperature control circuit) and a circulation unit 63 (third circulation unit). In the temperature control system TS3, the second section 42C may further include a three-way valve 53b. The three-way valve 53b is accommodated in the housing 42c.

[0069] The temperature control circuit 53 may be configured to include a device for adjusting the temperature of the temperature control medium M3, for example, a heat exchanger 53a (third heat exchanger). The heat exchanger 53a is configured to be able to adjust the temperature of the temperature control medium M3 by heat exchange between the temperature control medium M3 and the temperature control medium Me. In one embodiment, the heat exchanger 53a may also be a condenser.

[0070] The circulation unit 63 is a part of the third circulation system. The circulation unit 63 is housed in the housing 42c together with the circulation unit 61, the temperature adjustment circuit 52, and the circulation unit 62 and the temperature adjustment circuit 53. The third circulation system is configured to circulate the temperature adjustment medium M3 adjusted to the third temperature T3 in the second flow path (for example, the flow path 130a) in the second component 120 different from the first component 110. The circulation unit 63 may also include a container 63a (third container) storing the temperature adjustment medium M3 therein and a pump 63b (third pump) for circulating the temperature adjustment medium M3.

[0071] In the third circulation system, the container 63a is connected between the outlet of the second flow path and the pump 63b, and the heat exchanger 53a is connected between the pump 63b and the inlet of the second flow path. The outlet of the heat exchanger 53a for the temperature regulating medium M3 is connected to the inlet of the second flow path. The outlet of the second flow path is connected to the container 63a. In one embodiment, the pump 63b may also be connected to the inlet of the heat exchanger 53a for the temperature regulating medium M3 and the first port of the three-way valve 53b. The outlet of the heat exchanger 53a for the temperature regulating medium M3 may also be connected to the second port of the three-way valve 53b. In addition, the third port of the three-way valve 53b may also be connected to the inlet of the second flow path.

[0072] The second section 42C may further include a heater 63c. The heater 63c is disposed in the container 63a to heat the temperature regulating medium M3. The heater 63c is connected to a heater power supply 63d and generates heat using the electric power from the heater power supply 63d.

[0073] In the temperature control system TS3, the temperature control medium M3 is supplied to the flow path (for example, the flow path 130a) in the second component 120 after its temperature is adjusted to, for example, the third temperature T3 in the temperature control loop 53 of the second section 42C. When the temperature control medium M3 cools the second component 120, the temperature of the temperature control medium M3 rises by ΔT3 from the third temperature T3. The temperature control medium M3 whose temperature has risen by ΔT3 returns to the temperature control loop 53 from the circulation part 63 of the second section 42C. Then, after its temperature is adjusted to the third temperature T3 in the temperature control loop 53, the temperature control medium M3 is supplied to the second flow path (for example, the flow path 130a) in the second component 120 again.

[0074] In the temperature control system TS3, the second section 42C is separated from the first section 41, similarly to the temperature control system TS1 and the temperature control system TS2. Therefore, the size of the unit constituting the temperature control system TS3 can be reduced. In addition, in the temperature control system TS3, similarly to the temperature control system TS1 and the temperature control system TS2, the second section 42C can be set in a layer Fb different from the layer Fc in which the first section 41 is set. Therefore, in the temperature control system TS3, similarly to the temperature control system TS1 and the temperature control system TS2, the setting area of ​​the unit of the temperature control system TS3 in the layer Fc can be reduced. In addition, in the temperature control system TS3, similarly to the temperature control system TS1 and the temperature control system TS2, the temperature control system TS3 can increase the degree of freedom of design, improve the temperature control efficiency, and shorten the recovery operation in the event of an abnormality.

[0075] [Fourth Embodiment]

[0076] Next, still another exemplary embodiment will be described. Figure 7 This is a diagram schematically showing a temperature control system according to still another exemplary embodiment. Figure 7 The configuration of the temperature control system TS4 in the plasma processing system 100D is shown. The plasma processing system 100D will be described below from the perspective of differences from the plasma processing system 100C.

[0077] The second section 42D of the temperature control system TS4 is different from the second section 42C in that it does not include the temperature control loop 52 and the circulation unit 62. In addition, the plasma processing system 100D does not include the switch 70. The temperature control loop 51 and the circulation unit 61 of the temperature control system TS4 are connected to the first flow path in the same manner as the temperature control loop 51 and the circulation unit 61 of the temperature control system TS1. In addition, the other structures of the temperature control system TS4 are the same as the corresponding structures of the temperature control system TS3.

[0078] In the temperature control system TS4, the second section 42D is also separated from the first section 41. Therefore, the size of the unit constituting the temperature control system TS4 can be reduced. In addition, the temperature control system TS4 can also set the second section 42D in a layer Fb different from the layer Fc in which the first section 41 is set. Therefore, the temperature control system TS4 can also reduce the installation area of ​​the unit of the temperature control system TS4 in the layer Fc. In addition, the temperature control system TS4 can also increase the degree of freedom of design, improve the temperature control efficiency, and shorten the recovery work in the event of an abnormality.

[0079] Although various exemplary embodiments have been described above, the present invention is not limited to the exemplary embodiments described above, and various additions, omissions, substitutions, and changes may be made. In addition, elements in different embodiments may be combined to form other embodiments.

[0080] Here, various exemplary embodiments included in the present invention are described in the following [E1] to [E18].

[0081] [E1]

[0082] A temperature control system, comprising:

[0083] A first section includes a first temperature regulating circuit and a first housing accommodating the first temperature regulating circuit, wherein the first temperature regulating circuit includes a first heat exchanger configured to perform heat exchange with a first temperature regulating medium;

[0084] a second section including a first container and a first pump in a first circulation system, and a second housing accommodating the first container and the first pump, wherein the first circulation system is configured to circulate the first temperature regulating medium in a first flow path in a first component of the plasma processing device, wherein the first container is connected between the first flow path and the first pump, and the first heat exchanger is connected between the first pump and the first flow path; and

[0085] The connecting portion is a part of the first circulation system, is disposed between the first section and the second section, and is connected between the first pump and the first heat exchanger.

[0086] [E2]

[0087] A temperature control system according to E1, wherein:

[0088] The first temperature adjustment circuit is a refrigeration circuit including an evaporator as the first heat exchanger.

[0089] [E3]

[0090] A temperature control system according to E1 or E2, wherein:

[0091] The second section also includes:

[0092] a second heat exchanger configured to be capable of exchanging heat with a second temperature regulating medium; and

[0093] a second container and a second pump in a second circulation system, wherein the second circulation system includes the second heat exchanger and is configured to circulate the second temperature control medium in the first flow path,

[0094] The second container is connected between the first flow path and the second pump, and the second heat exchanger is connected between the second pump and the first flow path.

[0095] The second heat exchanger, the second container and the second pump are accommodated in the second shell.

[0096] The temperature adjustment system further includes a switch for selectively connecting the first circulation system and the second circulation system to the first flow path.

[0097] [E4]

[0098] A temperature control system according to E3, wherein:

[0099] The second heat exchanger is a condenser.

[0100] [E5]

[0101] A temperature control system according to E3 or E4, wherein:

[0102] The second section also includes:

[0103] a third heat exchanger configured to be capable of exchanging heat with a third temperature regulating medium; and

[0104] a third container and a third pump in a third circulation system, wherein the third circulation system includes the third heat exchanger and is configured to circulate the third temperature regulating medium in a second flow path in a second component of the plasma processing apparatus,

[0105] The third container is connected between the second flow path and the third pump, and the third heat exchanger is connected between the third pump and the second flow path.

[0106] The third heat exchanger, the third container, and the third pump are accommodated in the second casing.

[0107] [E6]

[0108] A temperature control system according to E1 or E2, wherein:

[0109] The second section also includes:

[0110] a second heat exchanger configured to be capable of exchanging heat with a second temperature regulating medium; and

[0111] a second container and a second pump in a second circulation system, wherein the second circulation system includes the second heat exchanger and is configured to circulate the second temperature regulating medium in a second flow path in a second component of the plasma processing apparatus,

[0112] The second container is connected between the second flow path and the second pump, and the second heat exchanger is connected between the second pump and the second flow path.

[0113] The second heat exchanger, the second container, and the second pump are accommodated in the second casing.

[0114] [E7]

[0115] A temperature control system according to E5 or E6, wherein:

[0116] The second component is an upper electrode of the capacitive coupling type plasma processing device.

[0117] [E8]

[0118] A temperature control system according to any one of items E1 to E7, wherein:

[0119] The first component is a substrate supporting portion of the plasma processing apparatus.

[0120] [E9]

[0121] A temperature control system according to any one of items E1 to E8, wherein:

[0122] The first segment is arranged in a layer below a layer in which the second segment is arranged.

[0123] [E10]

[0124] A plasma processing system comprising:

[0125] Plasma processing equipment; and

[0126] Temperature control system,

[0127] The plasma processing device comprises:

[0128] chamber; and

[0129] a first component in which a first flow path is provided,

[0130] The above temperature control system comprises:

[0131] A first section includes a first temperature regulating circuit and a first housing accommodating the first temperature regulating circuit, wherein the first temperature regulating circuit includes a first heat exchanger configured to perform heat exchange with a first temperature regulating medium;

[0132] a second section including a first container and a first pump in a first circulation system, and a second housing accommodating the first container and the first pump, wherein the first circulation system is configured to allow the first temperature regulating medium to circulate in the first flow path, wherein the first container is connected between the first flow path and the first pump, and the first heat exchanger is connected between the first pump and the first flow path; and

[0133] The connecting portion is a part of the first circulation system, is disposed between the first section and the second section, and is connected between the first pump and the first heat exchanger.

[0134] [E11]

[0135] A plasma processing system according to E10, wherein:

[0136] The first temperature adjustment circuit is a refrigeration circuit including an evaporator as the first heat exchanger.

[0137] [E12]

[0138] A plasma processing system according to E10 or E11, wherein:

[0139] The second section also includes:

[0140] a second heat exchanger configured to be capable of exchanging heat with a second temperature regulating medium; and

[0141] a second container and a second pump in a second circulation system, wherein the second circulation system includes the second heat exchanger and is configured to circulate the second temperature control medium in the first flow path,

[0142] The second container is connected between the first flow path and the second pump, and the second heat exchanger is connected between the second pump and the first flow path.

[0143] The second heat exchanger, the second container and the second pump are accommodated in the second shell.

[0144] The temperature adjustment system further includes a switch for selectively connecting the first circulation system and the second circulation system to the first flow path.

[0145] [E13]

[0146] A plasma processing system according to E12, wherein:

[0147] The second heat exchanger is a condenser.

[0148] [E14]

[0149] A plasma processing system according to E12 or E13, wherein:

[0150] The second section also includes:

[0151] a third heat exchanger configured to be capable of exchanging heat with a third temperature regulating medium; and

[0152] a third container and a third pump in a third circulation system, wherein the third circulation system includes the third heat exchanger and is configured to circulate the third temperature regulating medium in a second flow path in a second component of the plasma processing apparatus,

[0153] The third container is connected between the second flow path and the third pump, and the third heat exchanger is connected between the third pump and the second flow path.

[0154] The third heat exchanger, the third container, and the third pump are accommodated in the second casing.

[0155] [E15]

[0156] A plasma processing system according to E10 or E11, wherein:

[0157] The second section also includes:

[0158] a second heat exchanger configured to be capable of exchanging heat with a second temperature regulating medium; and

[0159] a second container and a second pump in a second circulation system, wherein the second circulation system includes the second heat exchanger and is configured to circulate the second temperature regulating medium in a second flow path in a second component of the plasma processing apparatus,

[0160] The second container is connected between the second flow path and the second pump, and the second heat exchanger is connected between the second pump and the second flow path.

[0161] The second heat exchanger, the second container, and the second pump are accommodated in the second casing.

[0162] [E16]

[0163] A plasma processing system according to E14 or E15, wherein:

[0164] The plasma processing device is a capacitively coupled plasma processing device.

[0165] The second component is an upper electrode of the plasma processing device.

[0166] [E17]

[0167] A plasma processing system according to any one of E10 to E16, wherein:

[0168] The first component is a substrate supporting portion of the plasma processing apparatus.

[0169] [E18]

[0170] A plasma processing system according to any one of E10 to 17, wherein:

[0171] The first segment is arranged in a layer below a layer in which the second segment is arranged.

[0172] According to the above description, it should be understood that the various embodiments of the present invention are described in this specification for the purpose of illustration, and various changes can be made without departing from the scope and gist of the present invention. Therefore, the various embodiments disclosed in this specification are not intended to be limiting, and the true scope and gist are given by the scope of the invention claimed for protection.

[0173] Description of Reference Numerals

[0174] 100…plasma processing system, 1…plasma processing device, 11…substrate supporting portion, 1110a…flow path, 110…first component, TS1…temperature regulating system, 41…first section, 42…second section, 43…connecting portion, 51…temperature regulating circuit, 51a…heat exchanger, 61a…container, 61b…pump.

Claims

1. A temperature control system, characterized in that: include: A first section includes a first temperature regulating circuit and a first housing accommodating the first temperature regulating circuit, wherein the first temperature regulating circuit includes a first heat exchanger configured to perform heat exchange with a first temperature regulating medium; a second section including a first container and a first pump in a first circulation system, and a second housing accommodating the first container and the first pump, wherein the first circulation system is configured to circulate the first temperature regulating medium in a first flow path in a first component of a plasma processing device, wherein the first container is connected between the first flow path and the first pump, and the first heat exchanger is connected between the first pump and the first flow path; and The connecting portion is a part of the first circulation system, is arranged between the first section and the second section, and is connected between the first pump and the first heat exchanger.

2. The temperature control system according to claim 1, characterized in that: The first temperature regulating circuit is a refrigeration circuit including an evaporator as the first heat exchanger.

3. The temperature control system according to claim 1, characterized in that: The second section also includes: a second heat exchanger configured to be capable of exchanging heat with a second temperature regulating medium; and a second container and a second pump in a second circulation system, wherein the second circulation system includes the second heat exchanger and is configured to circulate the second temperature regulating medium in the first flow path, The second container is connected between the first flow path and the second pump, and the second heat exchanger is connected between the second pump and the first flow path. The second heat exchanger, the second container and the second pump are accommodated in the second shell. The temperature adjustment system further includes a switch that selectively connects the first circulation system and the second circulation system to the first flow path.

4. The temperature control system according to claim 3, characterized in that: The second heat exchanger is a condenser.

5. The temperature control system according to claim 3, characterized in that: The second section also includes: a third heat exchanger configured to be capable of exchanging heat with a third temperature regulating medium; and a third container and a third pump in a third circulation system, wherein the third circulation system includes the third heat exchanger and is configured to circulate the third temperature regulating medium in a second flow path in a second component of the plasma processing device, The third container is connected between the second flow path and the third pump, and the third heat exchanger is connected between the third pump and the second flow path. The third heat exchanger, the third container, and the third pump are accommodated in the second shell.

6. The temperature control system according to claim 1, characterized in that: The second section also includes: a second heat exchanger configured to be capable of exchanging heat with a second temperature regulating medium; and a second container and a second pump in a second circulation system, wherein the second circulation system includes the second heat exchanger and is configured to circulate the second temperature regulating medium in a second flow path in a second component of the plasma processing apparatus, The second container is connected between the second flow path and the second pump, and the second heat exchanger is connected between the second pump and the second flow path. The second heat exchanger, the second container, and the second pump are accommodated in the second casing.

7. The temperature control system according to claim 5 or 6, characterized in that: The second member is an upper electrode of the capacitive coupling type plasma processing device.

8. The temperature control system according to any one of claims 1 to 6, characterized in that: The first component is a substrate support portion of the plasma processing apparatus.

9. The temperature control system according to any one of claims 1 to 6, characterized in that: The first section is arranged in a layer below a layer in which the second section is arranged.

10. A plasma processing system, characterized in that: include: Plasma treatment devices; and Temperature control system, The plasma processing device comprises: chamber; and a first component in which a first flow path is provided, The temperature regulation system comprises: A first section includes a first temperature regulating circuit and a first housing accommodating the first temperature regulating circuit, wherein the first temperature regulating circuit includes a first heat exchanger configured to perform heat exchange with a first temperature regulating medium; a second section including a first container and a first pump in a first circulation system, and a second housing accommodating the first container and the first pump, wherein the first circulation system is configured to allow the first temperature regulating medium to circulate in the first flow path, wherein the first container is connected between the first flow path and the first pump, and the first heat exchanger is connected between the first pump and the first flow path; and The connecting portion is a part of the first circulation system, is arranged between the first section and the second section, and is connected between the first pump and the first heat exchanger.

11. The plasma processing system according to claim 10, characterized in that: The first temperature regulating circuit is a refrigeration circuit including an evaporator as the first heat exchanger.

12. The plasma processing system according to claim 10, characterized in that: The second section also includes: a second heat exchanger configured to be capable of exchanging heat with a second temperature regulating medium; and a second container and a second pump in a second circulation system, wherein the second circulation system includes the second heat exchanger and is configured to circulate the second temperature regulating medium in the first flow path, The second container is connected between the first flow path and the second pump, and the second heat exchanger is connected between the second pump and the first flow path. The second heat exchanger, the second container and the second pump are accommodated in the second shell. The temperature adjustment system further includes a switch that selectively connects the first circulation system and the second circulation system to the first flow path.

13. The plasma processing system according to claim 12, wherein: The second heat exchanger is a condenser.

14. The plasma processing system according to claim 12, wherein: The second section also includes: a third heat exchanger configured to be capable of exchanging heat with a third temperature regulating medium; and a third container and a third pump in a third circulation system, wherein the third circulation system includes the third heat exchanger and is configured to circulate the third temperature regulating medium in a second flow path in a second component of the plasma processing device, The third container is connected between the second flow path and the third pump, and the third heat exchanger is connected between the third pump and the second flow path. The third heat exchanger, the third container, and the third pump are accommodated in the second shell.

15. The plasma processing system according to claim 10, wherein: The second section also includes: a second heat exchanger configured to be capable of exchanging heat with a second temperature regulating medium; and a second container and a second pump in a second circulation system, wherein the second circulation system includes the second heat exchanger and is configured to circulate the second temperature regulating medium in a second flow path in a second component of the plasma processing apparatus, The second container is connected between the second flow path and the second pump, and the second heat exchanger is connected between the second pump and the second flow path. The second heat exchanger, the second container, and the second pump are accommodated in the second casing.

16. The plasma processing system according to claim 14 or 15, characterized in that: The plasma processing device is a capacitively coupled plasma processing device, The second component is an upper electrode of the plasma processing device.

17. The plasma processing system according to any one of claims 10 to 15, characterized in that: The first component is a substrate support portion of the plasma processing apparatus.

18. The plasma processing system according to any one of claims 10 to 15, characterized in that: The first section is arranged in a layer below a layer in which the second section is arranged.

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