Plating method, system and equipment of silicon carbide modified layer and storage medium
By planning and controlling the motion state and motion trajectory of the deposition source, the residual stress of large-diameter silicon carbide optical components during the plating process is reduced, the problems of deformation and insufficient adhesion of the film layer are solved, and a more efficient plating process is achieved.
Patent Information
- Application Number
- CN202411709597.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-27
- Publication Date
- 2025-04-04
AI Technical Summary
The residual stress generated by large-diameter silicon carbide optical components during the plating process is too large, resulting in deformation and insufficient adhesion of the film layer.
By planning the motion state and motion trajectory of the movable deposition source, the preset time of the deposition source resides after each traversal is controlled, and the proportional relationship between the time of the deposition source traversing the element to be deposited once and the length of the residence time is adjusted to ensure that the temperature of the element to be deposited is always lower than the preset temperature threshold.
It effectively reduces the residual stress of the silicon carbide modified layer, improves the adhesion of the film layer, and reduces the deformation of large-diameter optical components.
Smart Images
Figure CN119753645A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the technical field of optical element coating, and in particular to a coating method, system, equipment and storage medium for a silicon carbide modified layer. Background Art
[0002] Silicon carbide (SiC) material has become a widely used optical reflector blank material due to its excellent thermal conductivity, specific stiffness and thermal stability. However, due to the manufacturing mechanism of silicon carbide blanks, it is very difficult to achieve excellent surface roughness performance through optical polishing of the blanks themselves. At present, the generally adopted technical route is to coat a dense, uniform film layer with excellent polishing performance on the surface of the silicon carbide material. This film layer can be called a surface modification layer. After polishing this film layer, the material's own performance limitations can be overcome to achieve a surface roughness that meets performance requirements.
[0003] At present, there are generally two technologies for coating silicon carbide modified layers. One is the SiC modified layer deposited based on chemical vapor deposition technology (Chemical Vapor Deposition, CVD). As a supplier of many foreign silicon carbide optical components, Boostec is also engaged in the research and development of silicon carbide modified layer technology. From the information currently disclosed by the company, the company is also based on CVD technology and can currently achieve surface modification of SiC components with a diameter of more than 1.5m. The other is to use physical vapor deposition technology (Physical Vapor Deposition, PVD) to deposit Si modified layers. At present, China has achieved the surface modification of the world's largest-diameter monomer SiC component of 4m magnitude. Due to its own technical characteristics, PVD technology has greater advantages in the coating of large-diameter optical components.
[0004] However, the development direction of large-aperture silicon carbide optical components is larger aperture and lighter weight, which makes the residual stress problem after film coating more influential on large-aperture silicon carbide optical components with highly lightweight structure. Excessive residual stress will cause greater surface changes of lightweight large-aperture optical components, which will cause a series of problems. Since the modified layer is a single uniform medium ultra-thick film layer, the conventional multi-layer film overlapping method cannot be used to reduce the residual stress in the residual stress optimization method. The stress of the modified layer mainly comes from the linear expansion mismatch between the modified layer material and the base silicon carbide material. If the temperature of the element to be deposited is too high during the coating process, it will inevitably lead to the linear expansion mismatch between the modified layer material and the base silicon carbide material, which will lead to excessive residual stress in the modified layer. Summary of the invention
[0005] In view of this, the present application provides a method, system, equipment and storage medium for plating a silicon carbide modified layer to solve the problem of excessive residual stress in the silicon carbide modified layer plated by the existing deposition method.
[0006] In order to solve the above technical problems, a technical solution adopted in the present application is: to provide a method for plating a silicon carbide modified layer, which includes: planning the motion state and motion trajectory of a movable deposition source according to the deposition requirements of the element to be deposited; controlling the deposition source to work and cyclically traverse the element to be deposited according to the motion state, motion trajectory and deposition requirements, and when the deposition source moves out from the deposition surface of the element to be deposited after each traversal, controlling the deposition source to stay for a preset time and recording the temperature rise of the element to be deposited; cyclically adjusting the proportional relationship between the time it takes the deposition source to traverse the element to be deposited once and the residence time until the temperature rise of the element to be deposited meets the expected temperature rise, and under the preset temperature rise condition, the temperature of the element to be processed is always lower than the preset temperature threshold.
[0007] As a further improvement of the present application, the motion state and motion trajectory of the deposition source are planned according to the deposition requirements of the element to be deposited, including: when the deposition source is greater than or equal to the one-dimensional size of the deposition surface of the element to be deposited in the length direction, the deposition source is set to traverse the deposition surface of the element to be deposited in a linear motion, and the element to be deposited is controlled to rotate during the deposition process; in the linear motion mode, the motion state and motion trajectory of the deposition source are determined according to process tests while ensuring uniform deposition of the film layer.
[0008] As a further improvement of the present application, the motion state and motion trajectory of the deposition source are planned according to the deposition requirements of the element to be deposited, including: when the deposition source is smaller than the one-dimensional size of the deposition surface of the element to be deposited in the length direction, the deposition source is set to traverse the deposition surface of the element to be deposited in a grating trajectory motion manner; in the grating trajectory motion manner, the motion state and motion trajectory of the deposition source are determined according to process tests while ensuring uniform deposition of the film layer.
[0009] As a further improvement of the present application, the proportional relationship between the time it takes for the deposition source to traverse the element to be deposited once and the dwell time is adjusted, including: maintaining the dwell time unchanged, increasing the speed at which the deposition source traverses the workpiece to be deposited, so as to reduce the proportional relationship between the time it takes for the deposition source to traverse the element to be deposited once and the dwell time; or, maintaining the dwell time unchanged, reducing the speed at which the deposition source traverses the workpiece to be deposited, so as to increase the proportional relationship between the time it takes for the deposition source to traverse the element to be deposited once and the dwell time; or, maintaining the movement speed of the deposition source unchanged, increasing the dwell time, so as to reduce the proportional relationship between the time it takes for the deposition source to traverse the element to be deposited once and the dwell time; or, maintaining the movement speed of the deposition source unchanged, reducing the dwell time, so as to increase the proportional relationship between the time it takes for the deposition source to traverse the element to be deposited once and the dwell time.
[0010] As a further improvement of the present application, when the deposition source resides, the deposition source maintains a working state or does not maintain a working state.
[0011] As a further improvement of the present application, the deposition source is realized based on the sputtering deposition method in the physical deposition technology, the sputtering deposition method includes at least one of magnetron sputtering and ion beam sputtering, and the deposition source includes at least one of a rectangular magnetron sputtering deposition source, a circular sputtering deposition source, and an ion beam sputtering deposition source.
[0012] As a further improvement of the present application, the deposition source performs reciprocating motion when traversing the element to be deposited, and the reciprocating motion includes a mirror-set motion planning or an irregular motion planning.
[0013] In order to solve the above technical problems, another technical solution adopted in the present application is: to provide a plating system for a silicon carbide modified layer, which includes: a planning module, which is used to plan the movement state and movement trajectory of a movable deposition source according to the deposition requirements of the element to be deposited; a traversal module, which is used to control the operation of the deposition source and cyclically traverse the element to be deposited according to the movement state, movement trajectory and deposition requirements, and when the deposition source moves out from the deposition surface of the element to be deposited after each traversal, the deposition source is controlled to stay for a preset time and the temperature rise of the element to be deposited is recorded; an adjustment module, which is used to cyclically adjust the proportional relationship between the time for the deposition source to traverse the element to be deposited once and the residence time, until the temperature rise of the element to be deposited meets the expected temperature rise, and under the preset temperature rise condition, the temperature of the element to be processed is always lower than the preset temperature threshold.
[0014] In order to solve the above-mentioned technical problems, another technical solution adopted in the present application is: to provide a computer device, which includes a processor and a memory coupled to the processor, wherein program instructions are stored in the memory, and when the program instructions are executed by the processor, the processor executes the steps of the method for plating a silicon carbide modified layer as described in any one of the above-mentioned items.
[0015] In order to solve the above technical problems, another technical solution adopted by the present application is: providing a storage medium storing program instructions capable of implementing any of the above-mentioned methods for plating a silicon carbide modified layer.
[0016] The beneficial effect of the present application is that the coating method of the silicon carbide modified layer of the present application plans the motion state and motion trajectory of the movable deposition source according to the deposition demand, and then controls the deposition source to work and circulates through the element to be deposited according to the motion state, motion trajectory and deposition demand, and when the deposition source moves out from the deposition surface of the element to be deposited after each traversal, controls the deposition source to stay for a preset time to allow the element to be deposited to cool down, and records the temperature rise of the element to be deposited, and then circulates and adjusts the proportional relationship between the time the deposition source traverses the element to be deposited once and the residence time until the temperature rise of the element to be deposited meets the expected temperature rise, and then the modified layer is plated under the expected temperature rise, so that the overall temperature of the large-aperture optical element is maintained at a low level during the deposition process, thereby effectively reducing the final residual stress of the silicon carbide modified layer, thereby improving the film adhesion of the large-aperture silicon carbide modified layer, and reducing the deformation of the large-aperture optical element caused by the residual stress of the modified layer. BRIEF DESCRIPTION OF THE DRAWINGS
[0017] Figure 1 1 is a schematic diagram of a process of a method for plating a silicon carbide modified layer according to an embodiment of the present invention;
[0018] Figure 2 It is a schematic diagram of a process in which a deposition source of a method for plating a silicon carbide modified layer according to an embodiment of the present invention realizes traversal in a straight line trajectory;
[0019] Figure 3 It is a schematic diagram of a process in which a deposition source of a method for plating a silicon carbide modified layer according to an embodiment of the present invention realizes traversal in a raster-type trajectory;
[0020] Figure 4 Schematic diagram of functional modules of a plating system for a silicon carbide modified layer according to an embodiment of the present invention;
[0021] Figure 5 is a schematic diagram of the structure of a computer device according to an embodiment of the present invention;
[0022] Figure 6 It is a schematic diagram of the structure of the storage medium of an embodiment of the present invention. DETAILED DESCRIPTION
[0023] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.
[0024] The terms "first", "second", "third" in this application are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Thus, the features defined as "first", "second", "third" can expressly or implicitly include at least one of the features. In the description of this application, the meaning of "multiple" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined. In the embodiments of this application, all directional indications (such as up, down, left, right, front, back...) are only used to explain the relative position relationship, movement, etc. between the components under a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication also changes accordingly. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device comprising a series of steps or units is not limited to the steps or units listed, but optionally also includes steps or units that are not listed, or optionally also includes other steps or units inherent to these processes, methods, products or devices.
[0025] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.
[0026] Figure 1 is a schematic flow chart of a method for coating a silicon carbide modified layer according to an embodiment of the present invention. It should be noted that if substantially the same results are achieved, the method of the present invention is not limited to Figure 1 The process sequence shown is limited. Figure 1 As shown, the plating method of the silicon carbide modified layer includes the steps of:
[0027] Step S101: planning the motion state and motion trajectory of a movable deposition source according to the deposition requirements of the component to be deposited.
[0028] It should be noted that, in this embodiment, the movable deposition source is implemented based on the sputtering deposition method in the physical deposition technology, the sputtering deposition method includes at least one of magnetron sputtering and ion beam sputtering, and the deposition source includes at least one of a rectangular magnetron sputtering deposition source, a circular sputtering deposition source, and an ion beam sputtering deposition source.
[0029] Specifically, after the deposition requirements of the element to be deposited are obtained, the motion state and motion trajectory of the movable deposition source are planned according to the deposition requirements. The motion state is the motion speed of the deposition source. The planning of the motion state and motion trajectory can be specifically achieved by:
[0030] (1) determining a first deposition function distribution characteristic of a deposition source according to the surface shape of the element to be deposited;
[0031] (2) determining the motion trajectory of the deposition source according to the surface shape of the element to be deposited and the first deposition function distribution characteristics of the deposition source;
[0032] (3) obtaining a second deposition function distribution characteristic of the deposition source according to a change in the relative position relationship between the deposition source and the element to be deposited when the deposition source moves along its motion trajectory;
[0033] (4) The motion state of the sedimentation source during its movement is solved based on the distribution characteristics of the second sedimentation function of the sedimentation source.
[0034] (5) Using the solved motion state of the deposition source during its movement to perform virtual coating, a virtual coating result is obtained; after deposition on the deposition source, the virtual coating result and the actual deposition result of the deposition source are verified; if the virtual coating result does not match the actual deposition result, after adjusting the deposition source, steps (1) to (4) are repeated until the virtual coating result matches the actual deposition result.
[0035] Through the above-mentioned motion state and motion trajectory planning method, uniform coating of the element to be deposited can be achieved.
[0036] Step S102: Control the deposition source to work and traverse the element to be deposited in a loop according to the motion state, motion trajectory and deposition requirements, and when the deposition source moves out of the deposition surface of the element to be deposited after each traversal, control the deposition source to stay for a preset time and record the temperature rise of the element to be deposited.
[0037] It should be noted that the deposition source moves out of the deposition surface of the element to be deposited, specifically means that when the deposition source stays, even if the deposition source continues to work, no film layer will be deposited on the deposition surface of the element to be deposited. Controlling the deposition source to stay means that after the deposition source moves to the position, it will remain in a stopped state at the position as set, and the time of the stopped state reaches a preset time.
[0038] Specifically, after planning the motion state and motion trajectory, the deposition source is controlled to traverse the entire surface to be deposited of the element to be deposited in a preset manner. Specifically, the deposition source can be moved in a translational manner in combination with the rotation of the workpiece to be deposited to achieve mirror traversal, or the deposition source can be traversed in a grating trajectory. After each traversal, when the deposition source moves out of the surface to be deposited of the element to be deposited, the deposition source is controlled to stay, and during the stay, the temperature of the element to be deposited can be reduced, and the temperature rise of the element to be deposited is recorded.
[0039] Furthermore, in this embodiment, the deposition source performs reciprocating motion when traversing the element to be deposited, and the reciprocating motion includes a mirror-set motion plan or an irregular motion plan. The reciprocating motion can be performed multiple times in order to achieve the deposition of a specified film thickness.
[0040] Further, in this embodiment, when the deposition source resides, the deposition source may or may not remain in a working state.
[0041] Step S103: cyclically adjusting the ratio between the time for the deposition source to traverse the element to be deposited and the dwell time, until the temperature rise of the element to be deposited meets the expected temperature rise. Under the preset temperature rise, the temperature of the element to be processed is always lower than the preset temperature threshold.
[0042] Specifically, in order to reasonably control the temperature of the element to be deposited, the proportional relationship between the time for the deposition source to traverse the element to be deposited and the dwell time is adjusted to ensure that the temperature of the element to be deposited is always lower than a pre-specified preset temperature threshold.
[0043] Furthermore, in some embodiments, step S101 specifically includes:
[0044] 1.1. When the length of the deposition source is greater than or equal to the one-dimensional size of the deposition surface of the element to be deposited, the deposition source is set to traverse the deposition surface of the element to be deposited in a linear motion, and the element to be deposited is controlled to rotate during the deposition process.
[0045] 1.2. Under the mode of linear motion, the motion state and trajectory of the deposition source are determined according to process tests while ensuring uniform deposition of the film layer.
[0046] Specifically, in this embodiment, the mirror traversal is achieved by combining the translation of the deposition source with the rotation of the workpiece to be deposited. Figure 2 As shown, when the length direction of the deposition source is greater than or equal to the one-dimensional size of the deposition surface of the element to be deposited, the deposition process specifically includes:
[0047] 1. The deposition source (2) will move in a straight line (e.g. Figure 2 (4)) traverses the surface to be deposited of the element to be deposited (3) (as shown in Figure 2 The deposition source (2) (dashed line) moves to the position of the deposition source (1).
[0048] 2. During the deposition process, the element to be deposited (3) will rotate.
[0049] 3. Determine the deposition source motion planning for uniform film deposition through process tests.
[0050] 4. Measure the temperature rise of the element to be deposited (3) under the motion planning of the deposition source.
[0051] 5. If the temperature rise does not meet expectations, increase the movement speed of the deposition source during the entire deposition process, thereby reducing the amount of deposition on the mirror surface during each mirror traversal deposition and reducing the temperature rise of the element to be deposited during each traversal;
[0052] The above process is repeated until the film deposition temperature meets the expected temperature rise.
[0053] Furthermore, in some other embodiments, step S101 specifically includes:
[0054] 2.1. When the deposition source is smaller than the one-dimensional size of the deposition surface of the element to be deposited in the length direction, the deposition source is set to traverse the deposition surface of the element to be deposited in a grating track motion.
[0055] 2.2. Under the grating trajectory motion mode, the motion state and trajectory of the deposition source are determined based on process tests while ensuring uniform deposition of the film layer.
[0056] Specifically, in this embodiment, the deposition source realizes mirror traversal in a grating trajectory. Figure 3 As shown, when the deposition source is smaller than the one-dimensional size of the deposition surface of the element to be deposited in the length direction, the deposition process specifically includes:
[0057] 1. After the deposition source (5) moves to position (7), it will traverse the deposition surface of the deposition element (9) in a grating track motion manner (as shown in (8) in Figure (3)).
[0058] 2. During the deposition process, the element to be deposited will no longer rotate.
[0059] 3. Determine the deposition source motion planning for uniform film deposition through process tests.
[0060] 4. Measure the temperature rise of the plated component under the deposition plan.
[0061] 5. If the temperature rise does not meet expectations, reduce the size of the deposition source used, and re-plan the deposition uniformity trajectory based on the deposition source, and measure the temperature rise of the plated components under the planning conditions.
[0062] The above process is repeated until the film deposition temperature meets the expected temperature rise.
[0063] Furthermore, in this embodiment, the step of adjusting the proportional relationship between the time for the deposition source to traverse the element to be deposited once and the dwell time specifically includes:
[0064] Maintaining the dwell time unchanged, increasing the speed of the deposition source when traversing the workpiece to be deposited, so as to reduce the ratio between the time it takes for the deposition source to traverse the element to be deposited and the dwell time;
[0065] Or,
[0066] Maintaining the dwell time unchanged, reducing the speed of the deposition source when traversing the workpiece to be deposited, so as to increase the ratio between the time the deposition source traverses the element to be deposited and the dwell time;
[0067] Or,
[0068] Maintain the movement speed of the deposition source unchanged and increase the dwell time to reduce the ratio between the time it takes for the deposition source to traverse the element to be deposited and the dwell time;
[0069] Or,
[0070] The movement speed of the deposition source is maintained unchanged, and the dwell time is reduced to increase the ratio between the time it takes for the deposition source to traverse the element to be deposited and the dwell time.
[0071] Specifically, the ratio of the time it takes for the deposition source to traverse the element to be deposited and the dwell time can be changed by changing the dwell time of the deposition source or the movement speed of the deposition source. When the dwell time of the deposition source is increased, the element to be deposited can have more time to dissipate heat, and the temperature of the element to be deposited can be lowered; or, when the movement speed of the deposition source is increased, the deposition source has a shorter plating time on the element to be deposited, and the element to be deposited absorbs less heat, which slows down the temperature rise of the element to be deposited.
[0072] It should be noted that, in order to ensure the plating efficiency of the modified layer of the element to be deposited, in this embodiment, the ratio of the time it takes for the deposition source to traverse the element to be deposited once to the dwell time cannot be too low. If the ratio is too low, although the temperature of the element to be deposited always meets the expected temperature rise, the plating time of the element to be deposited will be greatly extended, affecting the plating efficiency. Therefore, in this embodiment, while ensuring that the temperature of the element to be deposited meets the preset temperature rise, the ratio of the time it takes for the deposition source to traverse the element to be deposited once to the dwell time should be increased as much as possible, which can be achieved by reducing the dwell time of the deposition source or reducing the movement speed of the deposition source.
[0073] The coating method of the silicon carbide modified layer of the present application plans the motion state and motion trajectory of the movable deposition source according to the deposition demand, and then controls the deposition source to work and circulates through the element to be deposited according to the motion state, motion trajectory and deposition demand, and when the deposition source moves out from the deposition surface of the element to be deposited after each traversal, controls the deposition source to stay for a preset time to allow the element to be deposited to cool down, and records the temperature rise of the element to be deposited, and then circulates and adjusts the proportional relationship between the time the deposition source traverses the element to be deposited once and the residence time until the temperature rise of the element to be deposited meets the expected temperature rise, and then the modified layer is plated under the expected temperature rise condition, so that the overall temperature of the large-aperture optical element is maintained at a low level during the deposition process, thereby effectively reducing the final residual stress of the silicon carbide modified layer, thereby improving the film adhesion of the large-aperture silicon carbide modified layer, and reducing the deformation of the large-aperture optical element caused by the residual stress of the modified layer.
[0074] Figure 4 Schematic diagram of the functional modules of the coating system of the silicon carbide modified layer according to the embodiment of the present invention. Figure 4 As shown, the silicon carbide modified layer plating system 20 includes: a planning module 21, a traversal module 22 and an adjustment module 23.
[0075] A planning module 21, used to plan the motion state and motion trajectory of the movable deposition source according to the deposition requirements of the element to be deposited;
[0076] The traversal module 22 is used to control the deposition source to work and traverse the element to be deposited according to the motion state, motion trajectory and deposition requirements, and control the deposition source to stay for a preset time when the deposition source moves out of the deposition surface of the element to be deposited after each traversal, and record the temperature rise of the element to be deposited;
[0077] The adjustment module 23 is used to cyclically adjust the ratio between the time for the deposition source to traverse the element to be deposited and the residence time until the temperature rise of the element to be deposited meets the expected temperature rise. Under the preset temperature rise condition, the temperature of the element to be processed is always lower than the preset temperature threshold.
[0078] Optionally, the planning module 21 performs operations of planning the motion state and motion trajectory of the deposition source according to the deposition requirements of the element to be deposited, specifically including: when the deposition source is greater than or equal to the one-dimensional size of the deposition surface of the element to be deposited in the length direction, the deposition source is set to traverse the deposition surface of the element to be deposited in a linear motion, and the element to be deposited is controlled to rotate during the deposition process; in the linear motion mode, the motion state and motion trajectory of the deposition source are determined according to process tests while ensuring uniform deposition of the film layer.
[0079] Optionally, the planning module 21 performs operations of planning the motion state and motion trajectory of the deposition source according to the deposition requirements of the element to be deposited, specifically including: when the deposition source is smaller than the one-dimensional size of the deposition surface of the element to be deposited in the length direction, setting the deposition source to traverse the deposition surface of the element to be deposited in a grating trajectory motion manner; in the grating trajectory motion manner, determining the motion state and motion trajectory of the deposition source while ensuring uniform deposition of the film layer according to process tests.
[0080] Optionally, the adjustment module 23 performs an operation of adjusting the proportional relationship between the time it takes for the deposition source to traverse the element to be deposited once and the dwell time, specifically including: maintaining the dwell time unchanged, increasing the speed at which the deposition source traverses the workpiece to be deposited, so as to reduce the proportional relationship between the time it takes for the deposition source to traverse the element to be deposited once and the dwell time; or, maintaining the dwell time unchanged, reducing the speed at which the deposition source traverses the workpiece to be deposited, so as to increase the proportional relationship between the time it takes for the deposition source to traverse the element to be deposited once and the dwell time; or, maintaining the movement speed of the deposition source unchanged, increasing the dwell time, so as to reduce the proportional relationship between the time it takes for the deposition source to traverse the element to be deposited once and the dwell time; or, maintaining the movement speed of the deposition source unchanged, reducing the dwell time, so as to increase the proportional relationship between the time it takes for the deposition source to traverse the element to be deposited once and the dwell time.
[0081] Optionally, when the deposition source is stationary, the deposition source remains in an operating state or does not remain in an operating state.
[0082] Optionally, the deposition source is realized based on a sputtering deposition method in physical deposition technology, the sputtering deposition method includes at least one of magnetron sputtering and ion beam sputtering, and the deposition source includes at least one of a rectangular magnetron sputtering deposition source, a circular sputtering deposition source, and an ion beam sputtering deposition source.
[0083] Optionally, the deposition source performs a reciprocating motion when traversing the element to be deposited, and the reciprocating motion includes a mirror-set motion planning or an irregular motion planning.
[0084] For other details about the technical solutions implemented by each module in the plating system of the silicon carbide modified layer in the above embodiment, please refer to the description of the plating method of the silicon carbide modified layer in the above embodiment, which will not be repeated here.
[0085] It should be noted that each embodiment in this specification is described in a progressive manner, and each embodiment focuses on the differences from other embodiments, and the same or similar parts between the embodiments can be referred to each other. For system embodiments, since they are basically similar to method embodiments, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment.
[0086] See also Figure 5 , Figure 5FIG. 1 is a schematic diagram of the structure of a computer device according to an embodiment of the present invention. Figure 5 As shown, the computer device 30 includes a processor 31 and a memory 32 coupled to the processor 31, wherein the memory 32 stores program instructions. When the program instructions are executed by the processor 31, the processor 31 executes the steps of the plating method of the silicon carbide modified layer described in any of the above embodiments.
[0087] The processor 31 may also be referred to as a resource (Central Processing Unit). The processor 31 may be an integrated circuit chip having signal processing capabilities. The processor 31 may also be a general-purpose processor, a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field programmable gate array (FPGA) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components. The general-purpose processor may be a microprocessor or the processor may also be any conventional processor, etc.
[0088] See also Figure 6 , Figure 6 It is a schematic diagram of the structure of the storage medium of the embodiment of the present invention. The storage medium of the embodiment of the present invention stores program instructions 41 that can implement the above-mentioned method for plating the silicon carbide modified layer, wherein the program instructions 41 can be stored in the above-mentioned storage medium in the form of a software product, including a number of instructions for a computer device (which can be a personal computer, server, or network device, etc.) or a processor (processor) to perform all or part of the steps of the method described in each embodiment of the present application. The aforementioned storage medium includes: U disk, mobile hard disk, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), disk or optical disk and other media that can store program codes, or computer devices such as computers, servers, mobile phones, tablets, etc.
[0089] In the several embodiments provided in the present application, it should be understood that the disclosed computer devices, systems and methods can be implemented in other ways. For example, the system embodiments described above are only schematic, for example, the division of units is only a logical function division, and there may be other division methods in actual implementation, such as multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some interfaces, indirect coupling or communication connection of systems or units, which can be electrical, mechanical or other forms.
[0090] In addition, each functional unit in each embodiment of the present invention may be integrated into one processing unit, or each unit may exist physically separately, or two or more units may be integrated into one unit. The above integrated unit may be implemented in the form of hardware or in the form of software functional units. The above is only an implementation method of the present application, and does not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made by using the contents of the specification and drawings of this application, or directly or indirectly used in other related technical fields, is also included in the patent protection scope of the present application.
Claims
1. A method for plating a silicon carbide modified layer, characterized in that: It includes: Planning the motion state and motion trajectory of the movable deposition source according to the deposition requirements of the element to be deposited; According to the motion state, the motion trajectory and the deposition requirement, the deposition source is controlled to work and circulate through the element to be deposited, and when the deposition source moves out of the deposition surface of the element to be deposited after each traversal, the deposition source is controlled to stay for a preset time, and the temperature rise of the element to be deposited is recorded; The ratio between the time taken for the deposition source to traverse the element to be deposited and the dwell time is cyclically adjusted until the temperature rise of the element to be deposited meets the expected temperature rise. Under the preset temperature rise, the temperature of the element to be processed is always lower than the preset temperature threshold.
2. The method for plating a silicon carbide modified layer according to claim 1, characterized in that: The step of planning the motion state and motion trajectory of the deposition source according to the deposition requirements of the element to be deposited comprises: When the length of the deposition source is greater than or equal to the one-dimensional size of the deposition surface of the element to be deposited, the deposition source is set to traverse the deposition surface of the element to be deposited in a linear motion, and the element to be deposited is controlled to rotate during the deposition process; In the linear motion mode, the motion state and motion trajectory of the deposition source are determined according to process tests while ensuring uniform deposition of the film layer.
3. The method for plating a silicon carbide modified layer according to claim 1, characterized in that: The step of planning the motion state and motion trajectory of the deposition source according to the deposition requirements of the element to be deposited comprises: When the deposition source is smaller than the one-dimensional size of the deposition surface of the element to be deposited in the length direction, the deposition source is arranged to traverse the deposition surface of the element to be deposited in a grating track motion; In the grating track movement mode, the movement state and movement track of the deposition source are determined according to process tests while ensuring uniform deposition of the film layer.
4. The method for plating a silicon carbide modified layer according to claim 1, characterized in that: The adjusting the proportional relationship between the duration of the deposition source traversing the element to be deposited once and the dwelling duration includes: Maintaining the dwell time unchanged, increasing the speed of the deposition source when traversing the workpiece to be deposited, so as to reduce the proportional relationship between the time taken for the deposition source to traverse the element to be deposited once and the dwell time; Or, Maintaining the dwell time unchanged, reducing the speed of the deposition source when traversing the workpiece to be deposited, so as to increase the proportional relationship between the time the deposition source traverses the element to be deposited once and the dwell time; Or, Maintaining the movement speed of the deposition source unchanged, increasing the dwell time, so as to reduce the proportional relationship between the time taken for the deposition source to traverse the element to be deposited once and the dwell time; Or, The movement speed of the deposition source is maintained unchanged, and the dwell time is reduced to increase the proportional relationship between the time taken for the deposition source to traverse the element to be deposited once and the dwell time.
5. The method for plating a silicon carbide modified layer according to claim 1, characterized in that: When the deposition source resides, the deposition source maintains an operating state or does not maintain an operating state.
6. The method for plating a silicon carbide modified layer according to claim 1, characterized in that: The deposition source is realized based on a sputtering deposition method in physical deposition technology, the sputtering deposition method includes at least one of magnetron sputtering and ion beam sputtering, and the deposition source includes at least one of a rectangular magnetron sputtering deposition source, a circular sputtering deposition source, and an ion beam sputtering deposition source.
7. The method for plating a silicon carbide modified layer according to claim 1, characterized in that: The deposition source performs reciprocating motion when traversing the element to be deposited, and the reciprocating motion includes a mirror-set motion planning or an irregular motion planning.
8. A coating system for a silicon carbide modified layer, characterized in that: It includes: A planning module, used to plan the motion state and motion trajectory of the movable deposition source according to the deposition requirements of the element to be deposited; A traversal module, used for controlling the deposition source to work and traverse the element to be deposited in a loop according to the motion state, the motion trajectory and the deposition demand, and controlling the deposition source to stay for a preset time when the deposition source moves out of the deposition surface of the element to be deposited after each traversal, and recording the temperature rise of the element to be deposited; The adjustment module is used to cyclically adjust the proportional relationship between the time length for the deposition source to traverse the element to be deposited once and the residence time length until the temperature rise of the element to be deposited meets the expected temperature rise condition. Under the preset temperature rise condition, the temperature of the element to be processed is always lower than the preset temperature threshold.
9. A computer device, characterized in that: The computer device includes a processor and a memory coupled to the processor, wherein program instructions are stored in the memory. When the program instructions are executed by the processor, the processor executes the steps of the method for plating a silicon carbide modified layer as described in any one of claims 1 to 7.
10. A storage medium, characterized in that: The device stores program instructions capable of implementing the method for plating a silicon carbide modified layer according to any one of claims 1 to 7.