Phase shifter unit, forming method thereof and liquid crystal antenna

Abstract

The invention discloses a phase shifter unit, a forming method thereof and a liquid crystal antenna. The phase shifter unit comprises a first substrate; the phase shifting device is located on the first substrate, the phase shifting device comprises a first branch and a second branch, the second branch is located on the side, away from the first substrate, of the first branch, the phase shifting device comprises a first side and a second side which are opposite, the first side is the side, close to the first substrate, of the first branch, and the second side is the side, close to the second substrate, of the second branch. The second side is one side, far away from the first substrate, of the second branch part; and the conductive layer is located on the first substrate, and the conductive layer is in electric contact with part of the first branch part. The reliability of the phase shifter unit is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of liquid crystal antennas, and in particular to a phase shifter unit and a forming method thereof, and a liquid crystal antenna. Background Art

[0002] Liquid crystal antennas have broad application prospects in the fields of satellite receiving antennas, vehicle-mounted radars, 5G base station antennas, etc. Liquid crystal antennas are new array antennas made by combining conventional patch antennas with liquid crystal phase shifters; the liquid crystal phase shifter controls the deflection of liquid crystal molecules to adjust the effective dielectric constant of the dielectric layer, thereby adjusting the phase difference between the inlet and outlet of the phase shifter. Liquid crystal antennas usually array phase shifters to increase antenna gain and overall performance.

[0003] For large-scale liquid crystal phase shift device arrays, the conductivity between the drive signal line and each phase shift device unit is particularly important. It is necessary to ensure that each unit can be normally conductive so that the liquid crystal antenna can work well as a whole. Summary of the invention

[0004] The technical problem solved by the present invention is to provide a phase shifter unit and a method for forming the same, and a liquid crystal antenna, so as to improve the reliability of the liquid crystal antenna.

[0005] In order to solve the above technical problems, the present invention provides a phase shifter unit, comprising: a first substrate; a phase shifter device located on the first substrate, the phase shifter device comprising a first section and a second section located on the first section, the second section being away from the surface of the first substrate, the phase shifter device comprising a first side and a second side opposite to each other, the first side being a surface of the first section in contact with the first substrate, and the second side being a surface of the second section away from the first substrate; and a conductive layer located on the first substrate, the conductive layer being in electrical contact with a portion of the first section.

[0006] On the other hand, the present invention further provides a liquid crystal antenna, comprising: the above-mentioned phase shifter unit; a second substrate arranged opposite to the first substrate, the second substrate and the first substrate forming a closed space; and a liquid crystal layer located between the first substrate and the second substrate.

[0007] On the other hand, the present invention also provides a method for forming the above-mentioned phase shifter unit, comprising: providing a first substrate; forming a phase shift device on the first substrate, the phase shift device comprising a first division and a second division, the second division being located on a side of the first division away from the first substrate, the phase shift device comprising a first side and a second side opposite to each other, the first side being a side of the first division close to the first substrate, and the second side being a side of the second division away from the first substrate; forming a conductive layer on the first substrate, the conductive layer being in electrical contact with a portion of the first division.

[0008] Compared with the prior art, the technical solution of the present invention has the following beneficial effects:

[0009] In the phase shifter unit and the method for forming the same of the present invention, the conductive layer is in electrical contact with the first portion of a portion of the phase shifter device, thereby providing a stress release window for subsequent film layer stacking in the area where the conductive layer is in contact with the first portion of the phase shifter device, thereby avoiding the problem of conductive layer disconnection due to stress mismatch between the conductive layer and other film layers, thereby improving the reliability of the phase shifter unit. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 and Figure 2 is a structural schematic diagram of a phase shifter unit in the prior art;

[0011] Figures 3 to 7 Schematic diagram of various structures of a phase shifter unit forming process in one embodiment of the present invention;

[0012] in, Figure 5 and Figure 6 is a schematic structural diagram of a phase shifter unit in one embodiment of the present invention;

[0013] Figures 8 to 11 is a schematic diagram of various structures in a process of forming a phase shifter unit in another embodiment of the present invention;

[0014] in, Fig. 9 and Fig.10 is a schematic structural diagram of a phase shifter unit in another embodiment of the present invention;

[0015] Figures 12 to 15 1 is a schematic diagram of various structures of a phase shifter unit forming process in another embodiment of the present invention;

[0016] in, Fig.15 is a structural schematic diagram of a phase shifter unit in another embodiment of the present invention;

[0017] Figures 16 to 18 1 is a schematic diagram of various structures of a phase shifter unit forming process in another embodiment of the present invention;

[0018] in, Fig.18 is a structural schematic diagram of a phase shifter unit in another embodiment of the present invention;

[0019] Figures 19 to 23 1 is a schematic diagram of various structures of a phase shifter unit forming process in another embodiment of the present invention;

[0020] in, Fig.23 is a structural schematic diagram of a phase shifter unit in another embodiment of the present invention;

[0021] Fig.24 It is a schematic diagram of the structure of a liquid crystal antenna in one embodiment of the present invention. DETAILED DESCRIPTION

[0022] Various exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It should be noted that the relative arrangement of components and steps, numerical expressions and numerical values ​​set forth in these embodiments do not limit the scope of the present invention unless otherwise specifically stated.

[0023] The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses.

[0024] Technologies, methods, and equipment known to ordinary technicians in the relevant art may not be discussed in detail, but where appropriate, the technologies, methods, and equipment should be considered as part of the specification.

[0025] In all examples shown and discussed herein, any specific values ​​should be interpreted as merely exemplary and not limiting. Therefore, other examples of the exemplary embodiments may have different values.

[0026] It should be noted that like reference numerals and letters refer to similar items in the following figures, and therefore, once an item is defined in one figure, it need not be further discussed in subsequent figures.

[0027] Figure 1 and Figure 2 It is a structural schematic diagram of a phase shifter unit in the prior art.

[0028] Please refer to Figure 1 and Figure 2 , Figure 1 is a schematic top view of a liquid crystal antenna in the prior art, Figure 2 for Figure 1 A schematic diagram of the cross-sectional structure of a phase shifter unit in the prior art, the phase shifter unit comprises: a substrate 100; a phase shifter device 101 located on the substrate 100; a protective layer 103 located on the side wall surface and the top surface of the phase shifter device 101 and the surface of the substrate 100; a conductive layer 102 located on a portion of the protective layer 103, the conductive layer 102 extending from the top surface of the phase shifter device 101 along one side wall of the phase shifter device 101 to the surface of the substrate 100, and the conductive layer 102 is electrically connected to the top of the phase shifter device 101.

[0029] In the phase shifter unit, the material of the phase shifter 101 includes copper, and the material of the protective layer 103 includes a dielectric material. The stresses between the protective layer 103 and the phase shifter 101 are mismatched. Therefore, during the formation process, when the protective layer 103 generates a large stress pull on the protective layer 103 due to thermal expansion and contraction, the deformation of the protective layer 103 is small. Therefore, the protective layer 103 is easily broken at a weak position (region 104) where the phase shifter 101 and the substrate 100 meet. When the conductive layer 102 is formed by a wet etching process, the etching liquid will penetrate into the region 104 to etch the conductive layer 102, causing the conductive layer 102 to be broken, thereby affecting the conductive performance between the conductive layer 102 and the phase shifter 101, and further affecting the reliability of the phase shifter unit.

[0030] In order to solve the above problems, the present invention provides a phase shifter unit and a method for forming the same, and a liquid crystal antenna. The conductive layer is electrically in contact with the first portion of a portion of the phase shifter device, so that a stress release window is provided for subsequent film layer stacking in the area where the conductive layer contacts the first portion of the phase shifter device, thereby avoiding the problem of conductive layer disconnection caused by stress mismatch between the conductive layer and other film layers, thereby improving the reliability of the phase shifter unit.

[0031] In order to make the above-mentioned objects, features and beneficial effects of the present invention more obvious and easy to understand, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0032] Figure 5 and Figure 6 Schematic diagram of the structure of a phase shifter unit in one embodiment of the present invention.

[0033] Please refer to Figure 5 and Figure 6 , Figure 5 for Figure 6 Schematic diagram of the structure along the section line AA1, Figure 6 for Figure 5 The phase shifter unit includes:

[0034] A first substrate 200;

[0035] The phase shift device 201 is located on the first substrate 200. The phase shift device 201 includes a first subsection I and a second subsection II. The second subsection II is located on a side of the first subsection I away from the first substrate 200. The phase shift device 201 includes a first side and a second side opposite to each other. The first side is a side of the first subsection I close to the first substrate 200, and the second side is a side of the second subsection II away from the first substrate 200.

[0036] The conductive layer 205 is located on the first substrate 200 , and the conductive layer 205 is in electrical contact with a portion of the first sub-portion I.

[0037] In the phase shifter unit, the conductive layer 205 is in electrical contact with the first subsection I of the partial phase shifter device 201, so a stress release window is provided for subsequent film layer stacking in the area where the conductive layer 205 is in contact with the first subsection I of the phase shifter device, thereby avoiding the problem of conductive layer disconnection caused by stress mismatch between the conductive layer 205 and other film layers, thereby improving the reliability of the phase shifter unit.

[0038] In this embodiment, the conductive layer 205 is in electrical contact with a portion of the first sub-portion I, including: the conductive layer 205 is in electrical contact with the sidewall of the first sub-portion I. The conductive layer 205 is in electrical contact with the sidewall of the first sub-portion I, which increases the electrical contact area between the conductive layer 205 and the phase shifting device 201 and improves the conduction yield of the conductive layer 205 and the phase shifting device 201.

[0039] In this embodiment, the phase shifter unit further includes: a protective layer 202, which is located on a side of the first substrate 200 close to the phase shift device 201, and the protective layer 202 covers the phase shift device 201 and a portion of the first substrate 200; the protective layer 202 includes a first groove, the first groove exposes a portion of the sidewall surface of the first division I, and the first groove also exposes a portion of the first substrate 200 close to the side of the phase shift device 201; the conductive layer 205 is located on a side of the protective layer 202 away from the first substrate 200, and the conductive layer 205 is also located in the first groove.

[0040] The protection layer 202 can protect the surface of the phase shift device 201 from being damaged during subsequent processes and applications.

[0041] In this embodiment, the protection layer 202 further includes: a second groove, the second groove exposes a portion of the second side surface, the conductive layer 205 is also located in the second groove, and the conductive layer 205 is electrically connected to the second side.

[0042] The conductive layer 205 is electrically connected to the second side, and the conductive layer 205 is also electrically in contact with the sidewall of the first section I, which together increases the electrical contact area between the conductive layer 205 and the phase shift device 201 and improves the conduction yield of the conductive layer 205 and the phase shift device 201.

[0043] In this embodiment, the width of the phase shift device 201 is greater than the width of the conductive layer 205. The larger width of the phase shift device 201 can ensure that the conductive layer 205 and the phase shift device 201 are connected while having a smaller resistance, saving the process and material of the conductive layer 205.

[0044] In this embodiment, the material of the conductive layer 205 is different from the material of the phase shift device 201 .

[0045] In this embodiment, the resistance of the material of the conductive layer 205 is greater than the resistance of the material of the phase shift device 201. The material of the phase shift device 201 needs to have good conduction performance, that is, needs to have a small resistance; the material of the conductive layer 205 needs to have a large resistance to prevent the signal of the phase shift device 201 from leaking and losing along the path of the conductive layer 205.

[0046] In this embodiment, the material of the phase shift device 201 includes metal, and the metal includes copper-molybdenum, copper, gold or silver.

[0047] In this embodiment, the material of the conductive layer 205 includes: ITO, AZO or FTO. The material of the conductive layer 205 has good conductivity and ductility, and can meet the requirements of thin thickness, not easy to break, and good climbing performance while meeting the conductivity.

[0048] In the present embodiment, the material of the protection layer 202 includes a dielectric material, the dielectric constant of the dielectric material is greater than or equal to 5, the dielectric material includes a silicon-containing material, and the silicon-containing material includes silicon nitride.

[0049] In this embodiment, the angle between the sidewall of the phase shift device 201 and the surface of the first substrate 200 is in the range of 90 degrees to 135 degrees. The sidewall of the phase shift device 201 has a gentle slope, so that the conductive layer formed subsequently can extend from the second side of the phase shift device 201 along one sidewall of the phase shift device 201 to the surface of the first substrate 200, so that the film layer formed on the sidewall surface of the phase shift device 201 can have a good coverage and climbing performance.

[0050] In such Figure 7 The present invention also includes: a filling layer 206 located on the first substrate 200, and the phase shift device 201 and the conductive layer 205 are located in the filling layer 206. The filling layer 206 can protect the phase shift device 201 and the conductive layer 205 for subsequent packaging and other process steps.

[0051] In summary, the phase shifter unit in this embodiment, referring to Figure 5 and Figure 6 A first groove 203 is provided in the protective layer 202. The first groove 203 is provided at the position where the first substrate 200 and the side wall of the phase shift device 201 intersect. The conductive layer 205 is located in the first groove 203. Therefore, when the phase shift device 201 expands and contracts during the process and causes stress pulling on the protective layer 202, the first groove 203 provides a stress release window for the protective layer 202, so that the protective layer 202 is not likely to have a film break problem due to stress mismatch with the phase shift device 201. In addition, the conductive layer 205 is directly in contact with the side walls of the first substrate 200 and the phase shift device 201 exposed by the first groove 203. Therefore, it is not likely to cause the problem of film breakage at the position where the first substrate 200 and the side wall of the phase shift device 201 intersect due to uneven film stress, thereby improving reliability.

[0052] Accordingly, the embodiment of the present invention further provides a liquid crystal antenna. Figure 5 and Figure 6 refer to Fig.24 ,include:

[0053] like Figure 5 and Figure 6 Phase shifter unit;

[0054] A second substrate 210 disposed opposite to the first substrate 200, wherein the second substrate 210 and the first substrate 200 form a closed space;

[0055] The liquid crystal layer 211 is located between the first substrate 200 and the second substrate 210 .

[0056] In this embodiment, the second substrate 210 and the first substrate 200 are sealed by a sealing layer 212 .

[0057] The phase shifter unit has good reliability, and the liquid crystal antenna formed by the phase shifter unit can have a long service life, and the utilization rate is improved.

[0058] Figures 3 to 7 Schematic diagram of various structures of the phase shifter unit forming process in one embodiment of the present invention.

[0059] Please refer to Figure 3 , providing a first substrate 200; forming a phase shift device 201 on the first substrate 200, the phase shift device 201 includes a first section I and a second section II, the second section II is located on a side of the first section I away from the first substrate 200, the phase shift device 201 includes a first side and a second side opposite to each other, the first side is a side of the first section I close to the first substrate 200, and the second side is a side of the second section II away from the first substrate 200.

[0060] In this embodiment, the angle α between the side wall of the phase shift device 201 and the surface of the first substrate 200 is in the range of 90 degrees to 135 degrees. The side wall of the phase shift device 201 has a gentle slope, so that the conductive layer formed subsequently can extend from the second side of the phase shift device 201 along one side wall of the phase shift device 201 to the surface of the first substrate 200, so that the film layer formed on the side wall surface of the phase shift device 201 can have a good coverage and climbing performance.

[0061] The cross-sectional shape of the phase shifter 201 along the direction perpendicular to the surface of the first substrate 200 includes a rectangle, a trapezoid, or a cross-sectional shape in which at least one side has an angle α with the first substrate 200 .

[0062] In this embodiment, the cross-sectional shape of the phase shift device 201 along a direction perpendicular to the surface of the first substrate 200 includes a trapezoid.

[0063] The material of the phase shift device 201 includes metal or metal alloy. The metal includes copper, titanium, gold or silver. The metal alloy includes copper-molybdenum and molybdenum-niobium.

[0064] In this embodiment, the material of the phase shift device 201 includes copper and molybdenum. Copper material has good conductivity and low resistance, so as to reduce signal loss; molybdenum has good adhesion to the glass substrate, and serves as a connecting layer between copper metal and the glass substrate to prevent the copper metal device from falling off.

[0065] In other embodiments, the copper material with good conductivity and low resistance can be replaced by silver or gold.

[0066] The method for forming the phase shift device 201 includes: forming a metal material layer (not shown) on the first substrate 200; forming a patterned mask layer (not shown) on the metal material layer; etching the metal material layer using the patterned mask layer as a mask until the surface of the first substrate 200 is exposed, thereby forming the phase shift device 201 on the first substrate 200.

[0067] In this embodiment, the process of forming the metal material layer includes a physical vapor deposition process.

[0068] In this embodiment, the process of etching the metal material layer includes a dry etching process, which is easy to control the etching direction and etching rate, and can obtain a phase shift device 201 with high dimensional accuracy and good morphology.

[0069] In this embodiment, the material of the patterned mask layer includes photoresist. In other embodiments, the patterned mask layer also includes a hard mask layer located at the bottom of the photoresist.

[0070] In this embodiment, the material of the first substrate 200 includes glass. The glass material has good light transmittance, which facilitates light to pass through the material of the first substrate 200. Glass includes soda-lime glass, borosilicate glass, and the like.

[0071] In other embodiments, the material of the first substrate may also be: a resin PCB board, a silicon wafer, a flexible PI film board, etc.

[0072] Please refer to Figure 4 A protective layer 202 is formed on the surface of the first substrate 200, the side wall surface and the top surface of the phase shifter 201; a first groove 203 is formed in the protective layer 202, and the first groove 203 exposes a portion of the side wall surface of the first division I. The first groove 203 also exposes a portion of the first substrate 200 close to the side of the phase shifter 201.

[0073] The protection layer 202 is used to protect the phase shift device 201 from being damaged by subsequent process steps.

[0074] Please continue to refer to Figure 4A second groove 204 is formed in the protection layer 202 on the second side of the phase shift device 201 , and the second groove 204 exposes a portion of the second side surface of the phase shift device 201 .

[0075] In this embodiment, the first groove 203 and the second groove 204 are formed simultaneously.

[0076] The formation process of the first groove 203, the second groove 204 and the protective layer 202 includes: forming a protective material layer (not shown) on the surface of the first substrate 200, the side wall surface and the top surface of the phase shifter 201; forming a patterned mask layer (not shown) on the protective material layer; etching the protective material layer using the patterned mask layer as a mask until the surface of the first substrate 200 is exposed to form the protective layer 202, and forming the first groove 203 in the protective layer 202 until the second side surface of the phase shifter 201 is exposed, and forming the second groove 204 in the protective layer 202 on the second side of the phase shifter 201.

[0077] The process of forming the protective material layer includes a chemical vapor deposition process or an atomic layer deposition process.

[0078] In this embodiment, the process of etching the protective material layer includes a dry etching process.

[0079] In other embodiments, the first groove and the second groove can be formed in different process steps.

[0080] The material of the protective layer 202 includes a dielectric material, and the dielectric constant of the dielectric material is greater than or equal to 5. Since the copper metal (phase shifter 201) under the protective layer 202 is used for signal phase shifting, in order to prevent other metal layers from coupling with the phase shifter 201 to affect the signal, an insulating protective layer 202 is required for separation, and the larger the dielectric constant, the better the insulation effect, and it will not affect the signal.

[0081] In the present embodiment, the dielectric material includes a silicon-containing material, and the silicon-containing material includes silicon nitride.

[0082] In this embodiment, the thickness of the protection layer 202 ranges from 500 angstroms to 3000 angstroms.

[0083] The depth range of the first groove 203 and the second groove 204 is the same as the thickness range of the protection layer 202 .

[0084] Please refer to Figure 5 and Figure 6 , Figure 5 for Figure 6 Schematic diagram of the structure along the section line AA1, Figure 6 for Figure 5In the top view, a conductive layer 205 is formed on the surface of the protective layer 202 and in the first groove 203. The conductive layer 205 is in electrical contact with the side wall of the first section I. The conductive layer 205 is located on a side of the protective layer 202 away from the first substrate 200.

[0085] In this embodiment, the conductive layer 205 is also formed in the second groove 204, and the conductive layer 205 is electrically connected to the second side of the phase shift device 201. The conductive layer 205 is electrically connected to the second side, and the conductive layer 205 is also electrically in contact with the sidewall of the first section I, which together increases the electrical contact area between the conductive layer 205 and the phase shift device 201, and improves the conduction yield of the conductive layer 205 and the phase shift device 201.

[0086] The method for forming the conductive layer 205 includes: forming a conductive material layer (not shown) on the surface of the protective layer 202, in the first groove 203 and in the second groove 204; forming a patterned mask layer (not shown) on the surface of the conductive material layer; etching the conductive material layer using the patterned mask layer as a mask until the surface of the protective layer 202 is exposed, thereby forming a conductive layer 205 on the surface of the protective layer 202, in the first groove 203 and in the second groove 204.

[0087] The conductive layer 205 is formed in the first groove 203 and fills the first groove 203 , which can prevent the etching solution from penetrating through the first groove 203 and cutting the conductive material layer when etching the conductive material layer to form the conductive layer 205 , resulting in the conductive layer 205 being broken.

[0088] In this embodiment, the material of the conductive layer 205 is different from the material of the phase shift device 201 .

[0089] In this embodiment, the resistance of the material of the conductive layer 205 is greater than the resistance of the material of the phase shift device 201. The material of the phase shift device 201 needs to have good conduction performance, that is, needs to have a small resistance; the material of the conductive layer 205 needs to have a large resistance to prevent the signal of the phase shift device 201 from leaking and losing along the path of the conductive layer 205. Therefore, the material of the conductive layer 205 is different from the material of the phase shift device 201.

[0090] The material of the conductive layer 205 includes a conductive material, and the conductive material includes indium tin oxide (ITO), aluminum-doped zinc oxide (AZO) or fluorine-doped tin oxide (FTO).

[0091] In this embodiment, the material of the conductive layer 205 includes indium tin oxide.

[0092] In other embodiments, the material of the conductive layer and the material of the phase shifting device can be the same.

[0093] In this embodiment, the process of forming the conductive material layer includes: a magnetron sputtering coating process.

[0094] In this embodiment, the process of etching the conductive material layer includes a wet etching process.

[0095] In this embodiment, the material of the patterned mask layer includes photoresist. In other embodiments, the patterned mask layer also includes a hard mask layer located at the bottom of the photoresist.

[0096] In this embodiment, the conductive layer 205 is located on a portion of the surface of the protective layer 202 , and the conductive layer 205 extends from the second side of the phase shifter 201 along a side wall of the phase shifter 201 to the surface of the first substrate 200 .

[0097] The angle α between the side wall of the phase shift device 201 and the surface of the first substrate 200 is in the range of 90 degrees to 135 degrees. The side wall of the phase shift device 201 has a gentle slope. When the conductive layer 205 extends from the second side of the phase shift device 201 along one side wall of the phase shift device 201 to the surface of the first substrate 200, the conductive layer 205 has a good coverage rate and climbing performance on the side wall surface of the phase shift device 201.

[0098] In this embodiment, the first groove 203 exposes at least a portion of the first sub-portion I sidewall of one side of the phase shift device 201 having the conductive layer 205. That is, when the conductive layer 205 extends from the second side of the phase shift device 201 along one side wall of the phase shift device 201 to the surface of the first substrate 200, the first groove 203 is located in the extension direction of the conductive layer 205.

[0099] Figure 4 Schematically, the first groove 203 exposes a portion of the side wall of the first sub-portion I on one side of the phase shift device 201.

[0100] In other embodiments, the first groove exposes the entire sidewall of the first subsection of one side of the phase shift device having the conductive layer. In this embodiment, along the extension direction of the conductive layer 205, the width of the first groove 203 is greater than or equal to 3 micrometers.

[0101] In this embodiment, the width of the conductive layer 205 is smaller than the width of the first groove 203 , and the material forming the conductive layer can fill the first groove. The width of the conductive layer 205 is small, which can save costs while satisfying the conductive performance.

[0102] The first groove 203 is located in the protective layer 202. The first groove 203 is located at the intersection of the first substrate 200 and the side wall of the phase-shifting device 201. The conductive layer 205 is located in the first groove 203. Therefore, when the conductive layer 205 expands and contracts during the process and causes stress pulling on the protective layer 202, the first groove 203 provides a stress release window for the protective layer 202, so that the protective layer 202 is not likely to have a film break problem due to stress mismatch with the phase-shifting device 201; in addition, the conductive layer 205 is directly in contact with the side walls of the first substrate 200 and the phase-shifting device 201 exposed by the first groove 203, so it is not likely to cause the problem of film breakage at the intersection of the first substrate 200 and the side wall of the phase-shifting device 201 due to uneven film stress, thereby improving reliability.

[0103] In this embodiment, the width of the phase shift device 201 is greater than the width of the conductive layer 205 , so that the conductive layer 205 and the phase shift device 201 are conductively connected and have a small resistance, thereby saving the process and material of the conductive layer 205 .

[0104] In this embodiment, the width of the phase shift device 201 ranges from 30 micrometers to 100 micrometers.

[0105] In this embodiment, the width of the conductive layer 205 ranges from 20 micrometers to 50 micrometers.

[0106] In this embodiment, the thickness of the conductive layer 205 ranges from 500 angstroms to 1500 angstroms.

[0107] Please refer to Figure 7 A filling layer 206 is formed on the first substrate 200, and the phase shift device 201 and the conductive layer 205 are located in the filling layer 206. The filling layer 206 can protect the phase shift device 201 and the conductive layer 205 for subsequent packaging and other process steps.

[0108] The material of the filling layer 206 includes resin. The filling layer 206 is used to improve the flatness and light transmittance of the surface of the first substrate 200, and has good heat resistance and strength to protect the conductive layer 205 from damage and improve the service life.

[0109] In other embodiments, the filling layer may not be formed on the first substrate.

[0110] Fig. 9 and Fig.10 2 is a schematic structural diagram of a phase shifter unit in another embodiment of the present invention.

[0111] Please refer to Fig. 9 and Fig.10 , Fig. 9 for Fig.10 Schematic diagram of the structure along the section line AA1, Fig.10 for Fig. 9 The phase shifter unit includes:

[0112] A first substrate 200;

[0113] A phase shift device 201 located on the first substrate 200, the phase shift device 201 includes a first subsection I and a second subsection II, the second subsection II is located on a side of the first subsection I away from the first substrate 200, the phase shift device 201 includes a first side and a second side opposite to each other, the first side is a side of the first subsection I close to the first substrate 200, and the second side is a side of the second subsection II away from the first substrate 200;

[0114] The conductive layer 305 is located on the first substrate 200 , and the conductive layer 305 is in electrical contact with a portion of the first sub-portion I.

[0115] In the phase shifter unit, the conductive layer 305 is in electrical contact with the first subsection I of a part of the phase shifter device. Therefore, a stress release window is provided for subsequent film layer stacking in the area where the conductive layer 305 is in contact with the first subsection I of the phase shifter device, thereby avoiding the problem of conductive layer disconnection caused by stress mismatch between the conductive layer 305 and other film layers, thereby improving the reliability of the phase shifter unit.

[0116] In this embodiment, the conductive layer 305 is in electrical contact with a portion of the first sub-portion I, including: the conductive layer 305 is in electrical contact with the sidewall of the first sub-portion I. The conductive layer 305 is in electrical contact with the sidewall of the first sub-portion I, which increases the electrical contact area between the conductive layer 305 and the phase shifting device 201 and improves the conduction yield of the conductive layer 305 and the phase shifting device 201.

[0117] In this embodiment, the phase shifter unit further includes: a protective layer 302, which is located on a side of the first substrate 200 close to the phase shift device 201, and the protective layer 302 covers the phase shift device 201 and a portion of the first substrate 200; the protective layer 302 includes a first groove, the first groove is located in the protective layer 302, the first groove exposes a portion of the sidewall surface of the first section I, the first groove also exposes a portion of the first substrate 200 close to the side of the phase shift device 201, and the first groove surrounds the phase shift device 201; the conductive layer 305 is located on a side of the protective layer 302 away from the first substrate 200, and the conductive layer 305 is also located in the first groove.

[0118] The protection layer 302 can protect the surface of the phase shift device 201 from being damaged during subsequent processes and applications.

[0119] In this embodiment, the protective layer 202 further includes: a second groove, which is located in the protective layer 302 on the second side, and the second groove exposes a portion of the second side surface. The conductive layer 305 is also located in the second groove, and the conductive layer 305 is electrically connected to the second side.

[0120] The conductive layer 305 is electrically connected to the second side, and the conductive layer 305 is also electrically in contact with the sidewall of the first section I, which together increases the electrical contact area between the conductive layer 305 and the phase shift device 201 and improves the conduction yield of the conductive layer 305 and the phase shift device 201.

[0121] In this embodiment, the conductive layer 305 is located on a portion of the surface of the protective layer 302 , and the conductive layer 305 extends from the second side of the phase shifter 201 along a side wall of the phase shifter 201 to the surface of the first substrate 200 .

[0122] In this embodiment, the material of the conductive layer 305 is different from the material of the phase shift device 201 .

[0123] In this embodiment, the material of the phase shift device 201 includes metal, and the metal includes copper-molybdenum, copper, gold or silver.

[0124] In this embodiment, the material of the conductive layer 305 includes: ITO, AZO or FTO. The material of the conductive layer 305 has good conductivity and ductility, and can meet the requirements of thin thickness, not easy to break, and good climbing performance while meeting the conductivity.

[0125] In the present embodiment, the material of the protection layer 302 includes a dielectric material, the dielectric constant of the dielectric material is greater than or equal to 5, the dielectric material includes a silicon-containing material, and the silicon-containing material includes silicon nitride.

[0126] In this embodiment, the angle between the sidewall of the phase shift device 201 and the surface of the first substrate 200 is in the range of 90 degrees to 135 degrees. The sidewall of the phase shift device 201 has a gentle slope, so that the conductive layer formed subsequently can extend from the second side of the phase shift device 201 along one sidewall of the phase shift device 201 to the surface of the first substrate 200, so that the film layer formed on the sidewall surface of the phase shift device 201 can have a good coverage and climbing performance.

[0127] In summary, the conductive layer 305 is in electrical contact with the first subsection I of a portion of the phase shift device. Therefore, a stress release window is provided for subsequent film layer stacking in the area where the conductive layer 305 contacts the first subsection I of the phase shift device, thereby avoiding the problem of conductive layer disconnection caused by stress mismatch between the conductive layer 305 and other film layers, thereby improving the reliability of the phase shifter unit.

[0128] Please refer to Fig.11 The phase shifter unit further includes: a filling layer 306 located on the first substrate, and the phase shift device 201 and the conductive layer 305 are located in the filling layer 306. The filling layer 306 can protect the phase shift device 201 and the conductive layer 305 for subsequent packaging and other process steps.

[0129] In the phase shifter unit, the first groove 303 is located in the protective layer 302, and the first groove 303 is located at the intersection of the first substrate 200 and the side wall of the phase shift device 201. The conductive layer 305 is located in the first groove 303. Therefore, when the conductive layer 305 expands and contracts during the process and causes stress pulling on the protective layer 302, the first groove 303 provides a stress release window for the protective layer 302, so that the protective layer 302 is not prone to film breakage due to stress mismatch with the phase shift device 201; in addition, the conductive layer 305 is directly in contact with the side walls of the first substrate 200 and the phase shift device 201 exposed by the first groove 303, so it is not prone to film breakage due to uneven stress at the intersection of the first substrate 200 and the side wall of the phase shift device 201, thereby improving reliability.

[0130] Accordingly, the embodiment of the present invention further provides a liquid crystal antenna, please continue to refer to Fig. 9 and Fig.10 ,include:

[0131] like Fig. 9 and Fig.10 Phase shifter unit;

[0132] A second substrate disposed opposite to the first substrate 200, wherein the second substrate and the first substrate 200 form a closed space;

[0133] The liquid crystal layer is located between the first substrate 200 and the second substrate.

[0134] The phase shifter unit has good reliability, and the liquid crystal antenna formed by the phase shifter unit can have a long service life, and the utilization rate is improved.

[0135] Please refer to the structure of the liquid crystal antenna Fig.24 The structure in .

[0136] Figures 8 to 11 is a schematic diagram of a process of forming a phase shifter unit in another embodiment of the present invention.

[0137] Please refer to Figure 8 , Figure 8 For Figure 3 The structural diagram of the foundation, Figure 8 and Figure 4 The difference is that, in this embodiment, the first groove 303 surrounds the phase shifting device 201 .

[0138] Please continue to refer to Figure 8A protective layer 302 is formed on the surface of the first substrate 200, the side wall surface and the top surface of the phase shifter 201; a first groove 303 is formed in the protective layer 302, the first groove exposes a portion of the side wall surface of the first division I, the first groove also exposes a portion of the first substrate 200 close to a side of the phase shifter 201, and the first groove surrounds the phase shifter 201; a second groove 304 is formed in the protective layer 302 on the second side of the phase shifter 201, and the second groove 304 exposes a portion of the second side surface of the phase shifter 201.

[0139] Figure 8 The first groove 303 exposes part of the sidewall of the first subsection I of the phase shift device 201, and the depth of the first groove 303 is less than the thickness of the first subsection I. Therefore, the depth of the first groove 303 does not need to be too large, which saves process.

[0140] In other embodiments, the first groove exposes the entire first sub-portion sidewall of the phase shift device.

[0141] The protection layer 303 is used to protect the phase shift device 201 from being damaged by subsequent process steps.

[0142] In this embodiment, the first groove 303 and the second groove 304 are formed simultaneously.

[0143] The formation process of the first groove 303, the second groove 304 and the protective layer 302 includes: forming a protective material layer (not shown) on the surface of the first substrate 200, the side wall surface and the top surface of the phase shift device 201; forming a patterned mask layer (not shown) on the protective material layer; etching the protective material layer using the patterned mask layer as a mask until the surface of the first substrate 200 is exposed to form the protective layer 302, and forming the first groove 303 in the protective layer 302 until the second side surface of the phase shift device 201 is exposed, and forming the second groove 304 in the protective layer 302 on the second side of the phase shift device 201.

[0144] The process of forming the protective material layer includes a chemical vapor deposition process or an atomic layer deposition process.

[0145] In this embodiment, the process of etching the protective material layer includes a dry etching process.

[0146] In other embodiments, the first groove and the second groove can be formed in different process steps.

[0147] The material of the protective layer 302 includes a dielectric material, and the dielectric constant of the dielectric material is greater than or equal to 5. Since the phase shift device 201 (copper metal) is located below the protective layer 302 for signal phase shifting, an insulating layer is required to separate the phase shift device 201 from other metal layers due to electric field coupling and affecting the signal, and the larger the dielectric constant of the protective layer 302 is, the better the insulation effect of the protective layer 302 is.

[0148] In the present embodiment, the dielectric material includes a silicon-containing material, and the silicon-containing material includes silicon nitride.

[0149] In this embodiment, the thickness of the protection layer 302 ranges from 500 angstroms to 3000 angstroms.

[0150] The depth range of the first groove 303 and the second groove 304 is the same as the thickness range of the protection layer 302 .

[0151] Please refer to Fig. 9 and Fig.10 , Fig. 9 for Fig.10 Schematic diagram of the structure along the section line AA1, Fig.10 for Fig. 9 In the top view, a conductive layer 305 is formed on the surface of the protection layer 302 and in the first groove 303, and the conductive layer 305 is in electrical contact with the side wall of the first section I.

[0152] In this embodiment, the conductive layer 305 is also formed in the second groove 304 , and the conductive layer 305 is electrically connected to the second side of the phase shifting device 201 .

[0153] The conductive layer 305 is electrically connected to the second side, and the conductive layer 305 is also electrically in contact with the sidewall of the first section I, which together increases the electrical contact area between the conductive layer 305 and the phase shift device 201 and improves the conduction yield of the conductive layer 305 and the phase shift device 201.

[0154] The method for forming the conductive layer 305 includes: forming a conductive material layer (not shown) on the surface of the protective layer 302, in the first groove 303 and in the second groove 304; forming a patterned mask layer (not shown) on the surface of the conductive material layer; etching the conductive material layer using the patterned mask layer as a mask until the surface of the protective layer 302 is exposed, thereby forming a conductive layer 305 on the surface of the protective layer 302, in the first groove 303 and in the second groove 304.

[0155] The conductive layer 305 is formed in the first groove 303 and fills the first groove 303 , which can prevent the etching solution from penetrating through the first groove 303 and cutting the conductive material layer when etching the conductive material layer to form the conductive layer 305 , resulting in the conductive layer 305 being broken.

[0156] The first groove 303 surrounds the phase shift device 201, so that the contact area between the conductive layer 305 formed in the first groove 303 and the phase shift device 201 becomes larger, which can increase the conduction area and reduce the contact resistance. In addition, the problem of tensile stress caused by thermal expansion and contraction of the conductive layer 305 causing the protective layer 302 to break can be eliminated, thereby avoiding the problem of disconnection of the conductive layer 305 caused by leakage of etching solution when etching to form the conductive layer 305.

[0157] In this embodiment, the material of the conductive layer 305 is different from the material of the phase shift device 201 .

[0158] The material of the conductive layer 305 includes indium tin oxide (ITO), aluminum-doped zinc oxide (AZO) or fluorine-doped tin oxide (FTO).

[0159] In this embodiment, the material of the conductive layer 305 includes indium tin oxide.

[0160] In this embodiment, the process of forming the conductive material layer includes: a magnetron sputtering coating process.

[0161] In this embodiment, the process of etching the conductive material layer includes a wet etching process.

[0162] In this embodiment, the material of the patterned mask layer includes photoresist. In other embodiments, the patterned mask layer also includes a hard mask layer located at the bottom of the photoresist.

[0163] In this embodiment, the conductive layer 305 is located on a portion of the surface of the protective layer 302 , and the conductive layer 305 extends from the second side of the phase shifter 201 along a side wall of the phase shifter 201 to the surface of the first substrate 200 .

[0164] In this embodiment, along the extension direction of the conductive layer 305 , the width of the first groove 303 is greater than or equal to 3 micrometers.

[0165] The first groove 303 is located in the protective layer 302. The first groove 303 is located at the intersection of the first substrate 200 and the side wall of the phase shifter 201. The conductive layer 305 is located in the first groove 303. Therefore, when the conductive layer 305 expands and contracts during the process and causes stress pulling on the protective layer 302, the first groove 303 provides a stress release window for the protective layer 302, so that the protective layer 302 is not likely to have a film break due to stress mismatch with the phase shifter 201. In addition, the conductive layer 305 is directly in contact with the side walls of the first substrate 200 and the phase shifter 201 exposed by the first groove 303. Therefore, it is not likely to cause the problem of film breakage at the intersection of the first substrate 200 and the side wall of the phase shifter 201 due to uneven film stress, thereby improving reliability.

[0166] In this embodiment, the width of the phase shift device 201 ranges from 30 micrometers to 100 micrometers.

[0167] In this embodiment, the width of the conductive layer 305 ranges from 20 microns to 50 microns.

[0168] In this embodiment, the thickness of the conductive layer 305 ranges from 500 angstroms to 1500 angstroms.

[0169] Please refer to Fig.11 A filling layer 306 is formed on the first substrate 200, and the phase shift device 201 and the conductive layer 305 are located in the filling layer 306. The filling layer 306 can protect the phase shift device 201 and the conductive layer 305 for subsequent packaging and other process steps.

[0170] The material of the filling layer 306 includes resin. The filling layer 306 is used to improve the flatness and light transmittance of the surface of the first substrate 200, and has good heat resistance and strength to protect the conductive layer 305 from damage and improve the service life.

[0171] In other embodiments, the filling layer may not be formed.

[0172] Fig.15 Schematic diagram of the structure of a phase shifter unit in another embodiment of the present invention.

[0173] Please refer to Fig.15 , the phase shifter unit comprises:

[0174] A first substrate 400;

[0175] A phase shift device 402 is located on the first substrate 400, the phase shift device 402 includes a first subsection I and a second subsection II, the second subsection II is located on a side of the first subsection I away from the first substrate 400, and the phase shift device 402 includes a first side and a second side opposite to each other, the first side is a side of the first subsection I close to the first substrate 400, and the second side is a side of the second subsection II away from the first substrate 400;

[0176] A conductive layer 401 is located on the first substrate 400 , and the conductive layer 401 is in electrical contact with a portion of the first sub-portion I.

[0177] In the phase shifter unit, the conductive layer 401 is in electrical contact with the first subsection I of a portion of the phase shifter device 402. Thus, a stress release window is provided for subsequent film layer stacking in the area where the conductive layer 401 is in contact with the first subsection I of the phase shifter device. This avoids the problem of conductive layer disconnection caused by stress mismatch between the conductive layer 401 and other film layers, thereby improving the reliability of the phase shifter unit.

[0178] In this embodiment, the conductive layer 401 is in electrical contact with a portion of the first sub-portion I, including: the conductive layer 401 is in electrical contact with the first side of the phase shift device 402. The conductive layer 401 is in electrical contact with the first side of the phase shift device 402, which increases the electrical contact area between the conductive layer 401 and the phase shift device 402 and reduces the contact resistance between the conductive layer 401 and the phase shift device 402.

[0179] In this embodiment, the conductive layer 401 is located on a side of the first substrate 400 close to the phase shift device 402 , and the phase shift device 402 is located on a side of the conductive layer 401 away from the first substrate 400 .

[0180] In this embodiment, the material of the conductive layer 401 is different from the material of the phase shift device 402 .

[0181] In this embodiment, the width of the phase shift device 402 is greater than the width of the conductive layer 401. The larger width of the phase shift device 402 can ensure that the conductive layer 401 and the phase shift device 402 are connected while having a smaller resistance, saving the process and material of the conductive layer 401.

[0182] In this embodiment, the ratio of the square resistance of the phase shift device 402 to the square resistance of the conductive layer 401 is greater than or equal to 10000.

[0183] In this embodiment, the material of the phase shift device 402 includes metal or metal alloy, the metal includes copper, gold or silver, and the metal alloy includes copper-molybdenum.

[0184] In this embodiment, the material of the conductive layer 401 includes a conductive material, and the conductive material includes indium tin oxide, aluminum-doped zinc oxide, or fluorine-doped tin oxide. The material of the conductive layer 401 has good conductivity and ductility, and can meet the requirements of being thin, not easy to break, and having good climbing performance while meeting the conductivity.

[0185] In this embodiment, the phase shifter unit further includes: a protection layer 403 covering the surface of the phase shift device 402 and a portion of the surface of the conductive layer 401 .

[0186] In this embodiment, the material of the protection layer 403 includes a dielectric material, the dielectric constant of the dielectric material is greater than or equal to 5, the dielectric material includes a silicon-containing material, and the silicon-containing material includes silicon nitride.

[0187] In this embodiment, the ratio of the square resistance of the phase shift device 402 to the square resistance of the conductive layer 401 is greater than or equal to 10000, so as to ensure that the phase shift device 402 and the conductive layer 401 are in good contact and achieve good conduction.

[0188] In this embodiment, the angle between the sidewall of the phase shifter 402 and the surface of the first substrate 400 is in the range of 90 to 135 degrees. The sidewall of the phase shifter 402 has a gentle slope, so that the protective layer 403 formed subsequently can extend from the second side of the phase shifter 4021 along the sidewall of the phase shifter 402 to the surface of the first substrate 400, so that the film layer formed on the sidewall surface of the phase shifter 402 can have a good coverage and climbing performance.

[0189] In the phase shifter unit, the conductive layer 401 is located on a side of the first substrate 400 close to the phase shifter 402, and the phase shifter 402 is located on a side of the conductive layer 401 away from the first substrate 400. The phase shifter 402 is in direct contact with the conductive layer 401. Since both the phase shifter 402 and the conductive layer 401 are made of conductive materials and have a small stress difference, when the conductive layer 401 expands and contracts during the process to generate stress pulling, it will not cause the film layer to break, thereby improving the reliability of the phase shifter unit.

[0190] In this embodiment, the side wall of the phase shift device 402 is flush with one side of the conductive layer 401. Fig.15 Described in.

[0191] In other embodiments, both ends of the conductive layer can protrude from the sidewall of the phase shifting device.

[0192] Accordingly, the embodiment of the present invention further provides a liquid crystal antenna, please continue to refer to Fig.15 ,include:

[0193] like Fig.15 Phase shifter unit;

[0194] A second substrate disposed opposite to the first substrate 400, wherein the second substrate and the first substrate 400 form a closed space;

[0195] The liquid crystal layer is located between the first substrate 400 and the second substrate.

[0196] The phase shifter unit has good reliability, and the liquid crystal antenna formed by the phase shifter unit can have a long service life, and the utilization rate is improved.

[0197] Liquid crystal antenna can refer to Fig.24 The structure in .

[0198] Figures 12 to 15 is a schematic diagram of a process of forming a phase shifter unit in another embodiment of the present invention.

[0199] Please refer to Fig.12 , providing a first substrate 400 ; forming a conductive layer 401 on the first substrate 400 .

[0200] In this embodiment, the material of the first substrate 200 includes glass. The glass material has good light transmittance, which facilitates light to pass through the material of the first substrate 200. The glass includes soda-lime glass or borosilicate glass.

[0201] In other embodiments, the material of the first substrate may also be: a resin PCB board, a silicon wafer, a flexible PI film board, etc.

[0202] The method for forming the conductive layer 401 includes: forming a conductive material layer (not shown) on the surface of the first substrate 400; forming a patterned mask layer (not shown) on the surface of the conductive material layer; etching the conductive material layer using the patterned mask layer as a mask until the surface of the first substrate 400 is exposed, thereby forming a conductive layer 205 on the surface of the first substrate 400.

[0203] The material of the conductive layer 401 includes a conductive material, and the conductive material includes indium tin oxide (ITO), aluminum-doped zinc oxide (AZO) or fluorine-doped tin oxide (FTO).

[0204] In this embodiment, the material of the conductive layer 401 includes indium tin oxide.

[0205] In this embodiment, the process of forming the conductive material layer includes: a magnetron sputtering coating process.

[0206] In this embodiment, the process of etching the conductive material layer includes a wet etching process.

[0207] In this embodiment, the material of the patterned mask layer includes photoresist. In other embodiments, the patterned mask layer also includes a hard mask layer located at the bottom of the photoresist.

[0208] Please refer to Fig.13 and Fig.14 , Fig.13 for Fig.14 Schematic diagram of the structure along the section line AA1, Fig.14 for Fig.13 A top view of the phase shift device 402 is formed on the conductive layer 401 and the first substrate 400, the phase shift device 402 includes a first section I and a second section II, the second section II is located on the side of the first section I away from the first substrate 400, the phase shift device 402 includes a first side and a second side opposite to each other, the first side is a side of the first section I close to the first substrate 400, and the second side is a side of the second section II away from the first substrate 400.

[0209] The method for forming the phase shift device 401 includes: forming a metal material layer (not shown) on the first substrate 400 and the conductive layer 401; forming a patterned mask layer (not shown) on the metal material layer; etching the metal material layer using the patterned mask layer as a mask until the surface of the first substrate 400 and the surface of the conductive layer 401 are exposed, thereby forming the phase shift device 401 on the first substrate 200.

[0210] In this embodiment, the process of forming the metal material layer includes a physical vapor deposition process.

[0211] In this embodiment, the process of etching the metal material layer includes a dry etching process. The dry etching process is easy to control the etching direction and etching rate, and can obtain a phase shift device 401 with high dimensional accuracy and good morphology.

[0212] In this embodiment, the material of the patterned mask layer includes photoresist. In other embodiments, the patterned mask layer also includes a hard mask layer located at the bottom of the photoresist.

[0213] In this embodiment, the angle α between the side wall of the phase shift device 402 and the surface of the first substrate 400 is in the range of 90 degrees to 135 degrees. The figure shows the angle α between the side wall of the phase shift device 402 and the surface of the conductive layer 401. The surface of the conductive layer 401 is parallel to the surface of the first substrate 400. The angle α between the side wall of the phase shift device 402 and the surface of the conductive layer 401 can be characterized as the angle between the side wall of the phase shift device 402 and the surface of the first substrate 400.

[0214] The angle α between the sidewall of the phase shifter 402 and the surface of the first substrate 400 ranges from 90 degrees to 135 degrees. The sidewall of the phase shifter 402 has a gentle slope so that the protective layer subsequently formed on the sidewall surface of the phase shifter 402 can have better coverage and climbing performance.

[0215] The cross-sectional shape of the phase shifter 402 along the direction perpendicular to the surface of the first substrate 400 includes a rectangle, a trapezoid, or a cross-sectional shape in which at least one side has an angle α with the first substrate 400 .

[0216] In this embodiment, the cross-sectional shape of the phase shift device 402 along a direction perpendicular to the surface of the first substrate 400 includes a trapezoid.

[0217] In this embodiment, the material of the conductive layer 401 is different from the material of the phase shift device 402 .

[0218] The material of the phase shift device 402 includes metal or metal alloy, the metal includes copper, gold or silver, and the metal alloy includes copper-molybdenum.

[0219] In this embodiment, the material of the phase shift device 201 includes copper and molybdenum.

[0220] Copper materials have good conductivity and low resistance, which can reduce signal loss; molybdenum has good adhesion to the glass substrate and serves as a connecting layer between copper metal and the glass substrate to prevent copper metal devices from falling off.

[0221] In other embodiments, the copper material with good conductivity and low resistance can be replaced by silver or gold.

[0222] The material of the conductive layer 401 includes a conductive material, and the conductive material includes indium tin oxide (ITO), aluminum-doped zinc oxide (AZO) or fluorine-doped tin oxide (FTO).

[0223] In this embodiment, the material of the conductive layer 401 includes indium tin oxide.

[0224] In other embodiments, the material of the conductive layer is the same as the material of the phase shifting device.

[0225] In this embodiment, the width of the phase shift device 402 is greater than the width of the conductive layer 401 .

[0226] The conductive layer 401 is located on one side of the first substrate 400 close to the phase shift device 402. In this embodiment, the phase shift device 402 exposes one end of the conductive layer 401 located at the bottom of the phase shift device 402. This ensures that the phase shift device 402 and the conductive layer 401 have a larger contact area to achieve good conduction.

[0227] In other embodiments, the phase shifting device does not expose an end of the conductive layer located at the bottom of the phase shifting device.

[0228] In this embodiment, the ratio of the square resistance of the phase shift device 402 to the square resistance of the conductive layer 401 is greater than or equal to 10000, so as to ensure that the phase shift device 402 and the conductive layer 401 are in good contact and achieve good conduction.

[0229] The conductive layer 401 is located on a side of the first substrate 400 close to the phase shift device 402, and the phase shift device 402 is located on a side of the conductive layer 401 away from the first substrate 400, that is, the phase shifter 402 is located above the conductive layer 401, and the phase shifter 402 is in direct contact with the conductive layer 401. Since the phase shifter 402 and the conductive layer 401 are both made of conductive materials and have a small stress difference, when the conductive layer 401 expands and contracts during the process to generate stress pulling, it will not cause the film layer to break, thereby improving the reliability of the phase shifter unit.

[0230] Please refer to Fig.15 , Fig.15 For Fig.13 Based on the schematic diagram, a protection layer 403 is formed on the surface of the first substrate 400, the surface of the conductive layer 401, the side wall surface and the top surface of the phase shift device 402.

[0231] The protection layer 403 is used to protect the phase shift device 402 and the conductive layer 401 from being damaged by subsequent process steps.

[0232] The process of forming the protection layer 403 includes a chemical vapor deposition process or an atomic layer deposition process.

[0233] The material of the protective layer 403 includes a dielectric material, and the dielectric constant of the dielectric material is greater than or equal to 5. Since the copper metal (phase shifter 402) under the protective layer 403 is used for signal phase shifting, in order to prevent other metal layers from coupling with the phase shifter 402 to affect the signal, an insulating protective layer 403 is required for separation, and the larger the dielectric constant, the better the insulation effect, and it will not affect the signal.

[0234] In the present embodiment, the dielectric material includes a silicon-containing material, and the silicon-containing material includes silicon nitride.

[0235] In this embodiment, the thickness of the protection layer 403 ranges from 500 angstroms to 3000 angstroms.

[0236] In this embodiment, the method further includes: forming a filling layer (not shown) on the first substrate 400 , and the phase shifting device 402 and the conductive layer 401 are located in the filling layer.

[0237] The material of the filling layer includes resin. The filling layer is used to improve the flatness and light transmittance of the surface of the first substrate 400, and has good heat resistance and strength to protect the conductive layer 401 from damage and improve the service life.

[0238] In other embodiments, the filling layer may not be formed.

[0239] Fig.18 Schematic diagram of the structure of a phase shifter unit in another embodiment of the present invention.

[0240] Please refer to Fig.18 , the phase shifter unit comprises:

[0241] A first substrate 500;

[0242] A phase shift device 502 is located on the first substrate 500, the phase shift device 502 includes a first subsection I and a second subsection II, the second subsection II is located on a side of the first subsection I away from the first substrate 500, and the phase shift device 502 includes a first side and a second side opposite to each other, the first side is a side of the first subsection I close to the first substrate 500, and the second side is a side of the second subsection II away from the first substrate 500;

[0243] A conductive layer 501 is located on the first substrate 500 , and the conductive layer 501 is in electrical contact with a portion of the first sub-portion I.

[0244] In the phase shifter unit, the conductive layer 501 is in electrical contact with the first subsection I of a part of the phase shifter device. Therefore, a stress release window is provided for subsequent film layer stacking in the area where the conductive layer 501 is in contact with the first subsection I of the phase shifter device, thereby avoiding the problem of conductive layer disconnection caused by stress mismatch between the conductive layer 501 and other film layers, thereby improving the reliability of the phase shifter unit.

[0245] In this embodiment, the conductive layer 501 is in electrical contact with a portion of the first sub-portion I, including: the conductive layer 501 is in electrical contact with the sidewall of the first sub-portion I. The conductive layer 501 is in electrical contact with the sidewall of the first sub-portion I, which increases the electrical contact area between the conductive layer 501 and the phase shifting device 502 and improves the conduction yield of the conductive layer 501 and the phase shifting device 502.

[0246] In this embodiment, the conductive layer 501 and the phase shift device 502 are distributed on the surface of the first substrate 500 along a direction parallel to the surface of the first substrate 500 , and the conductive layer 501 contacts the sidewall of the first portion I of the phase shift device 502 .

[0247] In this embodiment, the material of the conductive layer 501 is the same as that of the phase shift device 502. The conductive layer 501 and the phase shift device 502 can be formed by one process, which saves the process flow.

[0248] In this embodiment, the material of the conductive layer 501 and the material of the phase shift device 502 include metal or metal alloy, the metal includes copper, gold or silver, and the metal alloy includes copper-molybdenum.

[0249] In this embodiment, it further includes: a protection layer 503 located on the surface of the first substrate 500 , the surface of the conductive layer 501 , the side wall surface and the top surface of the phase shifting device 502 .

[0250] In this embodiment, the ratio of the width range of the phase shift device 502 to the width range of the conductive layer 501 is less than or equal to 10. The thickness range of the phase shift device 502 and the thickness range of the conductive layer 201 are known, and by adjusting the ratio of the width range of the phase shift device 502 to the width range of the conductive layer 501, it is possible to ensure that the phase shift device 502 and the conductive layer 501 have good conduction performance.

[0251] In this embodiment, the ratio of the square resistance of the phase shift device 502 to the square resistance of the conductive layer 501 is greater than or equal to 10000, so as to ensure that the phase shift device 502 and the conductive layer 501 are in good contact and achieve good conduction.

[0252] In this embodiment, the material of the protection layer 503 includes a dielectric material, and the dielectric constant of the dielectric material is greater than or equal to 5.

[0253] In the phase shifter unit, the conductive layer 501 and the phase shifter device 502 are synchronously formed in one piece, and the phase shifter device 502 is in direct contact with the conductive layer 501. Since the phase shifter device 502 and the conductive layer 501 are both made of conductive materials, the stress difference is small. Therefore, when the conductive layer 501 expands and contracts during the process to generate stress pulling, it will not cause the film layer to break, thereby improving the reliability of the phase shifter unit.

[0254] The formation process of the phase shifter unit is as follows Figures 16 to 18Described in .

[0255] Accordingly, the embodiment of the present invention further provides a liquid crystal antenna, please continue to refer to Fig.18 ,include:

[0256] like Fig.18 Phase shifter unit;

[0257] A second substrate disposed opposite to the first substrate 500, the second substrate and the first substrate 500 forming a closed space;

[0258] The liquid crystal layer is located between the first substrate 500 and the second substrate.

[0259] The phase shifter unit has good reliability, and the liquid crystal antenna formed by the phase shifter unit can have a long service life, and the utilization rate is improved.

[0260] The structure of the liquid crystal antenna can refer to Fig.24 The structure in .

[0261] Figures 16 to 18 is a schematic diagram of a process of forming a phase shifter unit in another embodiment of the present invention.

[0262] Please refer to Fig.16 and Fig.17 , Fig.16 for Fig.17 Schematic diagram of the cross-section structure along the section line AA1. Fig.17 for Fig.16 A top view is provided, providing a first substrate 500; a conductive layer 501 and a phase shift device 502 are formed on the first substrate 500, the phase shift device 502 includes a first section I and a second section II located on the first section I, the second section II is located on a side of the first section I away from the first substrate 500, the phase shift device 502 includes a first side and a second side opposite to each other, the first side is a side of the first section I close to the first substrate 500, and the second side is a side of the second section II away from the first substrate 500.

[0263] In this embodiment, the conductive layer 501 and the phase shift device 502 are distributed on the surface of the first substrate 500 along a direction parallel to the surface of the first substrate 500 , and the conductive layer 501 contacts the sidewall of the first portion I of the phase shift device 502 .

[0264] In this embodiment, the thickness of the conductive layer 501 is less than or equal to the thickness of the first subsection I of the phase shift device 502. The thickness range of the phase shift device 502 and the thickness range of the conductive layer 201 are known, and a smaller on-resistance is obtained by adjusting the width range of the phase shift device 502 and the width range of the conductive layer 501. The thickness of the conductive layer 501 is smaller, which can save costs while meeting the conductivity requirements.

[0265] In this embodiment, the width of the conductive layer 501 is smaller than the width of the phase shift device 502. The thickness range of the phase shift device 502 and the thickness range of the conductive layer 201 are known, and a smaller on-resistance is obtained by adjusting the width range of the phase shift device 502 and the width range of the conductive layer 501. The width of the conductive layer 501 is smaller, which can save costs while meeting the conductivity requirements.

[0266] In this embodiment, the ratio of the width range of the phase shift device 502 to the width range of the conductive layer 501 is less than or equal to 10. The thickness range of the phase shift device 502 and the thickness range of the conductive layer 201 are known, and by adjusting the ratio of the width range of the phase shift device 502 to the width range of the conductive layer 501, it is possible to ensure that the phase shift device 502 and the conductive layer 501 have good conduction performance.

[0267] In this embodiment, the ratio of the square resistance of the phase shift device 502 to the square resistance of the conductive layer 501 is greater than or equal to 10000, so as to ensure that the phase shift device 502 and the conductive layer 501 are in good contact and achieve good conduction.

[0268] In this embodiment, the material of the conductive layer 501 is the same as that of the phase shift device 502 .

[0269] The material of the conductive layer 501 and the material of the phase shift device 502 include metal or metal alloy, the metal includes copper, gold or silver, and the metal alloy includes copper-molybdenum.

[0270] In this embodiment, the material of the conductive layer 501 and the material of the phase shift device 502 include copper.

[0271] In this embodiment, the conductive layer 501 and the phase shift device 502 are formed simultaneously, thereby saving one photomask.

[0272] The method for forming the conductive layer 501 and the phase shift device 502 includes: forming a metal material layer (not shown) on the first substrate 500; forming a patterned mask layer (not shown) on the metal material layer; etching the metal material layer using the patterned mask layer as a mask until the surface of the first substrate 500 is exposed, thereby forming the conductive layer 501 and the phase shift device 502 on the first substrate 500.

[0273] In this embodiment, the process of forming the metal material layer includes a physical vapor deposition process.

[0274] In this embodiment, the process of etching the metal material layer includes a dry etching process, which is easy to control the etching direction and etching rate, and can obtain the conductive layer 501 and the phase shift device 502 with high dimensional accuracy and good morphology.

[0275] In this embodiment, the material of the patterned mask layer includes photoresist. In other embodiments, the patterned mask layer also includes a hard mask layer located at the bottom of the photoresist.

[0276] In this embodiment, the angle α between the sidewall of the phase shifter 502 and the surface of the first substrate 500 is in the range of 90 to 135 degrees. The sidewall of the phase shifter 502 has a gentle slope so that the protective layer subsequently formed on the sidewall surface of the phase shifter 502 can have better coverage and climbing performance.

[0277] The cross-sectional shape of the phase shifter 502 along the direction perpendicular to the surface of the first substrate 500 includes a rectangle, a trapezoid, or a cross-sectional shape in which at least one side has an angle α with the first substrate 500 .

[0278] In this embodiment, the cross-sectional shape of the phase shift device 501 along a direction perpendicular to the surface of the first substrate 500 includes a trapezoid.

[0279] The conductive layer 501 and the phase shift device 502 are formed synchronously and integrally, and the phase shift device 502 is in direct contact with the conductive layer 501. Since the phase shift device 502 and the conductive layer 501 are both made of conductive materials, the stress difference is small. Therefore, when the conductive layer 501 expands and contracts during the process to generate stress pulling, it will not cause the film layer to break, thereby improving the reliability of the phase shifter unit.

[0280] Please refer to Fig.18 , Fig.18 For Fig.16 Based on the schematic diagram, a protective layer 503 is formed on the surface of the first substrate 500, the surface of the conductive layer 501, and the sidewall surface and top surface of the phase shift device 502. The protective layer 503 is used to protect the phase shift device 502 and the conductive layer 501 from damage in subsequent process steps.

[0281] The process of forming the protection layer 503 includes a chemical vapor deposition process or an atomic layer deposition process.

[0282] The material of the protective layer 503 includes a dielectric material, and the dielectric constant of the dielectric material is greater than or equal to 5. Since the phase shift device 502 (copper metal) is located below the protective layer 503 for signal phase shifting, an insulating layer is required to separate the phase shift device 502 from other metal layers due to electric field coupling and affecting the signal, and the larger the dielectric constant of the protective layer 503 is, the better the insulation effect of the protective layer 503 is.

[0283] In the present embodiment, the dielectric material includes a silicon-containing material, and the silicon-containing material includes silicon nitride.

[0284] In this embodiment, the thickness of the protection layer 503 ranges from 500 angstroms to 3000 angstroms.

[0285] In this embodiment, the method further includes: forming a filling layer (not shown) on the first substrate 500 , and the phase shifting device 502 and the conductive layer 501 are located in the filling layer.

[0286] The material of the filling layer includes resin. The filling layer is used to improve the flatness and light transmittance of the surface of the first substrate 500, and has good heat resistance and strength to protect the conductive layer 501 from damage and improve the service life.

[0287] In other embodiments, the filling layer may not be formed.

[0288] Fig.23 Schematic diagram of the structure of a phase shifter unit in another embodiment of the present invention.

[0289] Please refer to Fig.23 , the phase shifter unit comprises:

[0290] A first substrate 600;

[0291] A phase shift device 601 is located on the first substrate 600. The phase shift device 601 includes a first subsection I and a second subsection II. The second subsection II is located on a side of the first subsection I away from the first substrate 600. The phase shift device 601 includes a first side and a second side opposite to each other. The first side is a side of the first subsection I close to the first substrate 600, and the second side is a side of the second subsection II away from the first substrate 600.

[0292] A protective layer 603 located on the surface of the first substrate 600, the sidewall surface of the phase shift device 601 and the second side;

[0293] A buffer structure 602 located between the sidewall surface of the first subsection I of the phase shift device 601 and the protection layer 603;

[0294] The conductive layer 605 is located on the surface of the protection layer 603 , and the conductive layer 605 is electrically connected to the phase shifting device 601 .

[0295] In the phase shifter unit, the buffer structure 602 is located between the side wall surface of the first subsection I of the phase shifter device and the protective layer 604. The buffer structure 602 is located at the intersection of the first substrate 600 and the side wall of the phase shifter device. Therefore, when the conductive layer 605 expands and contracts during the process and causes stress pulling on the protective layer, the buffer structure 602 provides a stress release window for the protective layer 604, so that the protective layer 604 is not prone to film breakage due to stress mismatch with the phase shifter device 601, and the problem of disconnection of the conductive layer 605 caused by leakage of etching solution when etching to form the conductive layer 605 is avoided, thereby improving reliability.

[0296] In this embodiment, it also includes: a groove in the protective layer 603 located on the second side of the phase shift device 601, the groove exposing a portion of the second side surface of the phase shift device 601, and a conductive layer 605 located in the groove, the conductive layer 605 being electrically connected to the second side of the phase shift device 601. The conductive layer 605 located in the second groove is used to be electrically connected to the phase shift device 601.

[0297] In this embodiment, the conductive layer 605 is located on a portion of the surface of the protective layer 603 , and the conductive layer 605 extends from the top of the phase shift device 601 along a side wall of the phase shift device 601 to the surface of the first substrate 600 .

[0298] In this embodiment, the buffer structure 602 is located on the side wall surface of the first subsection I at the bottom of the conductive layer 605, and the buffer structure 602 is also located on a portion of the surface of the first substrate 600. The buffer structure 602 extends from the side wall of the first subsection I to the surface of the first substrate 600, so that the transition slope of the protective layer 603 and the conductive layer 605 located on the surface of the buffer structure 602 from the surface of the first substrate 600 to the side wall surface of the phase shift device 601 is relatively gentle, and the buffer structure 602 provides a window for stress release for the protective layer 604, while ensuring the continuity of the film layer.

[0299] In this embodiment, the elastic modulus of the material of the buffer structure 602 is greater than the elastic modulus of the material of the protective layer 603. Therefore, when the conductive layer 605 expands and contracts due to heat and causes stress pulling on the protective layer 603, the buffer structure 602 can deform greatly, providing a larger deformation space for the protective layer 603, so that the stress of the protective layer 603 is released.

[0300] In this embodiment, the material of the buffer structure 602 is different from the material of the protective layer 603, so as to obtain the buffer structure 602 material and the protective layer 603 with different elastic moduli.

[0301] In this embodiment, the material of the protection layer 603 includes a dielectric material, the dielectric constant of the dielectric material is greater than or equal to 5, the dielectric material includes a silicon-containing material, and the silicon-containing material includes silicon nitride.

[0302] In this embodiment, the material of the buffer structure 602 includes an organic material, and the organic material includes a resin or a photoresist.

[0303] In this embodiment, the buffer structure 602 includes one or more buffer layers.

[0304] In this embodiment, the material of the phase shift device 601 is different from the material of the conductive layer 605 .

[0305] In this embodiment, the material of the phase shift device 601 includes metal or metal alloy, the metal includes copper, gold or silver, and the metal alloy includes copper-molybdenum.

[0306] In this embodiment, the material of the conductive layer 605 includes a conductive material, and the conductive material includes indium tin oxide, aluminum-doped zinc oxide, or fluorine-doped tin oxide.

[0307] In this embodiment, it further includes: a filling layer located on the first substrate 600 , and the phase shifting device 601 and the conductive layer 605 are located in the filling layer.

[0308] In the phase shifter unit, the buffer structure 602 is located at the intersection of the first substrate 600 and the side wall of the phase shifter 601. Therefore, when the conductive layer 605 expands and contracts during the process and causes stress pulling on the protective layer 603, the buffer structure 602 provides a stress release window for the protective layer 603, making it difficult for the protective layer 603 to break due to stress mismatch with the phase shifter 601, avoiding the problem of disconnection of the conductive layer 605 due to leakage of etching solution when etching to form the conductive layer 605, thereby improving reliability.

[0309] The formation process of the phase shifter unit is as follows Figures 19 to 23 Described in .

[0310] Accordingly, the embodiment of the present invention further provides a liquid crystal antenna, please continue to refer to Fig.23 ,include:

[0311] like Fig.23 Phase shifter unit;

[0312] A second substrate disposed opposite to the first substrate 600, wherein the second substrate and the first substrate 400 form a closed space;

[0313] The liquid crystal layer is located between the first substrate 600 and the second substrate.

[0314] The phase shifter unit has good reliability, and the liquid crystal antenna formed by the phase shifter unit can have a long service life, and the utilization rate is improved.

[0315] Figures 19 to 23 is a schematic diagram of a process of forming a phase shifter unit in another embodiment of the present invention.

[0316] Please refer to Fig.19 , provide a first substrate 600; form a phase shift device 601 on the first substrate 600, the phase shift device 201 includes a first section I and a second section II, the second section II is located on the side of the first section I away from the first substrate 600, the phase shift device 601 includes a first side and a second side opposite to each other, the first side is a side of the first section I close to the first substrate 600, and the second side is a side of the second section II away from the first substrate 600.

[0317] In this embodiment, the angle α between the side wall of the phase shift device 601 and the surface of the first substrate 600 is in the range of 90 degrees to 135 degrees. The side wall of the phase shift device 601 has a gentle slope, so that the conductive layer formed subsequently can extend from the second side of the phase shift device 601 along the side wall of the phase shift device 201 to the surface of the first substrate 600, so that the film layer formed on the side wall surface of the phase shift device 601 can have a good coverage and climbing performance.

[0318] The cross-sectional shape of the phase shifter 601 along the direction perpendicular to the surface of the first substrate 600 includes a rectangle, a trapezoid, or a cross-sectional shape in which at least one side has an angle α with the first substrate 600 .

[0319] In this embodiment, the cross-sectional shape of the phase shift device 601 along a direction perpendicular to the surface of the first substrate 600 includes a trapezoid.

[0320] The material of the phase shift device 601 includes metal or metal alloy, the metal includes copper, gold or silver, and the metal alloy includes copper-molybdenum.

[0321] In this embodiment, the material of the phase shift device 601 includes copper and molybdenum.

[0322] Copper materials have good conductivity and low resistance, which can reduce signal loss; molybdenum has good adhesion to the glass substrate and serves as a connecting layer between copper metal and the glass substrate to prevent copper metal devices from falling off.

[0323] In other embodiments, the copper material with good conductivity and low resistance can be replaced by silver or gold.

[0324] The method for forming the phase shift device 601 includes: forming a metal material layer (not shown) on the first substrate 600; forming a patterned mask layer (not shown) on the metal material layer; etching the metal material layer using the patterned mask layer as a mask until the surface of the first substrate 600 is exposed, thereby forming the phase shift device 201 on the first substrate 600.

[0325] In this embodiment, the process of forming the metal material layer includes a physical vapor deposition process.

[0326] In this embodiment, the process of etching the metal material layer includes a dry etching process. The dry etching process is easy to control the etching direction and etching rate, and can obtain a phase shift device 601 with high dimensional accuracy and good morphology.

[0327] In this embodiment, the material of the patterned mask layer includes photoresist. In other embodiments, the patterned mask layer also includes a hard mask layer located at the bottom of the photoresist.

[0328] In this embodiment, the material of the first substrate 600 includes glass. The glass material has good light transmittance, which facilitates light to pass through the material of the first substrate 600. Glass includes soda-lime glass, borosilicate glass, and the like.

[0329] In other embodiments, the material of the first substrate may also be: a PCB board, a silicon wafer, a flexible PI film board, etc.

[0330] Please refer to Fig. 20 and Fig.21 , Fig. 20 for Fig.21 Schematic diagram of the structure along the section line AA1, Fig.21 for Fig. 20 In the top view, a buffer structure 602 is formed on the side wall surface of the first subsection I of the phase shift device 601.

[0331] The buffer structure 602 includes one or more buffer layers.

[0332] The material of the buffer structure 602 includes an organic material, and the organic material includes a resin or a photoresist.

[0333] The method for forming the buffer structure 602 includes: forming a buffer material layer (not shown) on the side wall surface of the first subsection I of the phase shift device 601; and curing the buffer material layer to form the buffer structure 602 on the side wall surface of the first subsection I of the phase shift device 601.

[0334] The process of forming the buffer material layer includes a dot coating process; the process of curing the buffer material layer includes thermal curing or ultraviolet curing.

[0335] In this embodiment, the height of the buffer structure 602 is less than or equal to the thickness of the first section I of the phase shift device 601 .

[0336] In other embodiments, the height of the buffer structure can be greater than the thickness of the first section of the phase shifting device.

[0337] In this embodiment, the thickness of the buffer structure 602 is in the range of 3000 angstroms to 10000 angstroms. The buffer material in this thickness range can form a uniform slope, which facilitates the smooth transition of the conductive layer circuit.

[0338] Please refer to Fig. 22 A protective layer 603 is formed on the surface of the first substrate 600 , the side wall surface of the phase shift device 601 and the second side, and the buffer structure 602 is located between the side wall of the first section I and the protective layer 603 .

[0339] In this embodiment, the method further includes: forming a groove 604 in the protection layer 603 on the second side of the phase shift device 601 , wherein the groove 604 exposes a portion of the second side surface of the phase shift device 601 .

[0340] The formation process of the groove 604 and the protective layer 603 includes: forming a protective material layer (not shown) on the surface of the first substrate 600, the side wall surface and the second side surface of the phase shifter 601, and the surface of the buffer structure 602; forming a patterned mask layer (not shown) on the protective material layer; etching the protective material layer using the patterned mask layer as a mask until the second side surface of the phase shifter 601 is exposed, and forming a groove 604 in the protective layer 603 on the second side of the phase shifter 601.

[0341] The process of forming the protective material layer includes a chemical vapor deposition process or an atomic layer deposition process.

[0342] In this embodiment, the process of etching the protective material layer includes a dry etching process.

[0343] In this embodiment, the material of the buffer structure 602 is different from the material of the protection layer 603 .

[0344] The material of the protective layer 603 includes a dielectric material, and the dielectric constant of the dielectric material is greater than or equal to 5. Since the phase shift device 601 (copper metal) is located below the protective layer 603 for signal phase shifting, an insulating layer is required to separate the phase shift device 601 from the other metal layers by electric field coupling to affect the signal, and the larger the dielectric constant of the protective layer 603 is, the better the insulation effect of the protective layer 603 is.

[0345] In the present embodiment, the dielectric material includes a silicon-containing material, and the silicon-containing material includes silicon nitride.

[0346] In this embodiment, the elastic modulus of the material of the buffer structure 602 is greater than the elastic modulus of the material of the protective layer 603. Therefore, in the subsequent process of forming the conductive layer, when the conductive layer expands and contracts due to heat and causes stress on the protective layer 603, the buffer structure 602 can be deformed to a greater extent, providing a larger deformation space for the protective layer 603, so that the stress of the protective layer 603 is released.

[0347] In this embodiment, the thickness of the protection layer 603 ranges from 500 angstroms to 3000 angstroms.

[0348] Please refer to Fig.23 , a conductive layer 605 is formed on the surface of the protective layer 603 , and the conductive layer 605 is electrically connected to the phase shift device 601 .

[0349] In this embodiment, the conductive layer 605 is also located in the groove 604 , and the conductive layer 605 is electrically connected to the second side of the phase shifting device 601 .

[0350] In this embodiment, the conductive layer 605 is located on a portion of the surface of the protective layer 603 , and the protective layer 605 extends from the top of the phase shift device 601 along a side wall of the phase shift device 601 to the surface of the first substrate 600 .

[0351] In this embodiment, the buffer structure 602 is located on the sidewall surface of the first subsection I at the bottom of the conductive layer 605, and the buffer structure 602 is also located on a portion of the surface of the first substrate 600. That is, when the conductive layer 605 extends from the second side of the phase shift device 601 along one sidewall of the phase shift device 601 to the surface of the first substrate 600, the buffer structure 602 is located in the extension direction of the conductive layer 605.

[0352] In this embodiment, the material of the phase shift device 601 is different from the material of the conductive layer 605 .

[0353] The material of the conductive layer 605 includes a conductive material, and the conductive material includes indium tin oxide, aluminum-doped zinc oxide, or fluorine-doped tin oxide.

[0354] In this embodiment, the material of the conductive layer 605 includes indium tin oxide.

[0355] In other embodiments, the material of the conductive layer and the material of the phase shifting device can be the same.

[0356] The method for forming the conductive layer 605 includes: forming a conductive material layer (not shown) on the surface of the protective layer 603 and in the groove 604; forming a patterned mask layer (not shown) on the surface of the conductive material layer; etching the conductive material layer using the patterned mask layer as a mask until the surface of the protective layer 603 is exposed, thereby forming a conductive layer 605 on the surface of the protective layer 603 and in the groove 604.

[0357] In this embodiment, the process of forming the conductive material layer includes: a magnetron sputtering coating process.

[0358] In this embodiment, the process of etching the conductive material layer includes a wet etching process.

[0359] In this embodiment, the material of the patterned mask layer includes photoresist. In other embodiments, the patterned mask layer also includes a hard mask layer located at the bottom of the photoresist.

[0360] The angle α between the side wall of the phase shift device 601 and the surface of the first substrate 600 is in the range of 90 to 135 degrees. The side wall of the phase shift device 601 has a gentle slope, and when the conductive layer 605 extends from the second side of the phase shift device 601 along one side wall of the phase shift device 601 to the surface of the first substrate 600, the conductive layer 605 has a good coverage rate and climbing performance on the side wall surface of the phase shift device 601.

[0361] The buffer structure 602 is located at the intersection of the first substrate 600 and the side wall of the phase shifter 601. Therefore, when the conductive layer 605 expands and contracts during the process and causes stress pulling on the protective layer 603, the buffer structure 602 provides a stress release window for the protective layer 603, making it difficult for the protective layer 603 to break due to stress mismatch with the phase shifter 601, avoiding the problem of disconnection of the conductive layer 605 due to leakage of etching solution when etching to form the conductive layer 605, thereby improving reliability.

[0362] In this embodiment, the method further includes: forming a filling layer (not shown) on the first substrate 600 , and the phase shifting device 601 and the conductive layer 605 are located in the filling layer.

[0363] The material of the filling layer includes resin. The filling layer is used to improve the flatness and light transmittance of the surface of the first substrate 600, and has good heat resistance and strength to protect the conductive layer 605 from damage and improve the service life.

[0364] In other embodiments, the filling layer may not be formed.

[0365] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined by the claims.

Claims

1. A phase shifter unit, characterized in that: include: a first substrate; a phase shifting device, located on the first substrate, the phase shifting device comprising a first sub-section and a second sub-section, the second sub-section being located on a side of the first sub-section away from the first substrate, the phase shifting device comprising a first side and a second side opposite to each other, the first side being a side of the first sub-section close to the first substrate, and the second side being a side of the second sub-section away from the first substrate; A conductive layer is located on the first substrate, and the conductive layer is in electrical contact with a portion of the first sub-portion.

2. The phase shifter unit according to claim 1, characterized in that The conductive layer is in electrical contact with a portion of the first sub-portion, including: the conductive layer is in electrical contact with a side wall of the first sub-portion.

3. The phase shifter unit according to claim 2, characterized in that Also includes: A protective layer is located on a side of the first substrate close to the phase shifter, and the protective layer covers the phase shifter and a portion of the first substrate; the protective layer includes a first groove, the first groove exposes a portion of the sidewall surface of the first portion, and the first groove also exposes a portion of the first substrate close to the phase shifter; the conductive layer is located on a side of the protective layer away from the first substrate, and the conductive layer is also located in the first groove.

4. The phase shifter unit according to claim 3, characterized in that The protection layer further includes a second groove, wherein the second groove exposes a portion of the second side surface, the conductive layer is located in the second groove, and the conductive layer is electrically connected to the second side.

5. The phase shifter unit according to claim 3, characterized in that The width of the conductive layer is smaller than the width of the first groove.

6. The phase shifter unit according to claim 3, characterized in that The first groove surrounds the phase shifting device.

7. The phase shifter unit according to claim 3, characterized in that The first groove exposes a portion of the sidewall surface of the first portion at one side of the phase shifting device.

8. The phase shifter unit according to claim 2, characterized in that The conductive layer and the phase shifter are distributed on the surface of the first substrate along a direction parallel to the surface of the first substrate, and the conductive layer is in contact with the side wall of the first section of the phase shifter.

9. The phase shifter unit according to claim 8, characterized in that The material of the conductive layer is the same as that of the phase shifter.

10. The phase shifter unit according to claim 1, characterized in that The conductive layer is in electrical contact with a portion of the first sub-portion, including: the conductive layer is in electrical contact with a first side of the phase shifter.

11. The phase shifter unit according to claim 10, characterized in that The conductive layer is located on a side of the first substrate close to the phase shift device, and the phase shift device is located on a side of the conductive layer away from the first substrate; and further includes: a protective layer covering a surface of the phase shift device and a portion of a surface of the conductive layer.

12. The phase shifter unit according to claim 11, characterized in that The material of the conductive layer is different from that of the phase shifter.

13. The phase shifter unit according to claim 11, characterized in that The material of the conductive layer is the same as that of the phase shifter.

14. The phase shifter unit according to claim 2, characterized in that The material of the conductive layer is different from that of the phase shifter.

15. The phase shifter unit according to claim 8 or 10, characterized in that The width of the phase shift device is greater than the width of the conductive layer.

16. The phase shifter unit according to claim 15, characterized in that The ratio of the square resistance of the phase shift device to the square resistance of the conductive layer is greater than or equal to 10,000.

17. The phase shifter unit according to claim 1, characterized in that The angle between the side wall of the phase shift device and the surface of the first substrate ranges from 90 degrees to 135 degrees.

18. The phase shifter unit according to claim 1, characterized in that Also includes: A filling layer is located on the first substrate, and the phase shifting device and the conductive layer are located in the filling layer.

19. A liquid crystal antenna, characterized in that: include: The phase shifter unit according to any one of claims 1 to 18; a second substrate disposed opposite to the first substrate, wherein the second substrate and the first substrate form a closed space; A liquid crystal layer is located between the first substrate and the second substrate.

20. A method of forming a phase shifter unit according to any one of claims 1 to 18, characterized in that: include: providing a first substrate; A phase shift device is formed on a first substrate, the phase shift device comprises a first sub-section and a second sub-section, the second sub-section is located at a side of the first sub-section away from the first substrate, the phase shift device comprises a first side and a second side opposite to each other, the first side is a side of the first sub-section close to the first substrate, and the second side is a side of the second sub-section away from the first substrate; A conductive layer is formed on the first substrate, wherein the conductive layer is in electrical contact with a portion of the first sub-portion.

21. The method for forming a phase shifter unit according to claim 20, wherein: The conductive layer is in electrical contact with a portion of the first sub-portion, including: the conductive layer is in electrical contact with a side wall of the first sub-portion.

22. The method for forming a phase shifter unit according to claim 21, wherein: The method for forming the conductive layer includes: forming a protective layer on the surface of the first substrate, the side wall surface and the top surface of the phase shifter; forming a first groove in the protective layer, the first groove exposing a portion of the side wall surface of the first division, the first groove exposing a portion of the side wall surface of the first division, and the first groove also exposing a portion of the first substrate close to the side of the phase shifter; forming a conductive layer on the surface of the protective layer and in the first groove, the conductive layer being located on a side of the protective layer away from the first substrate.

23. The method for forming a phase shifter unit according to claim 22, wherein: Also includes: forming a second groove in the protective layer on the second side, wherein the second groove exposes a portion of the second side surface; The conductive layer is also formed in the second groove, and the conductive layer is electrically connected to the second side.

24. The method for forming a phase shifter unit according to claim 22, wherein: The first groove exposes a first portion of the sidewall of one side of the phase shift device having the conductive layer.

25. The method for forming a phase shifter unit according to claim 22, wherein: The first groove surrounds the phase shifting device.

26. The method for forming a phase shifter unit according to claim 21, wherein: The conductive layer and the phase shift device are distributed on the surface of the first substrate along a direction parallel to the surface of the first substrate, and the conductive layer is in contact with the side wall of the first section of the phase shift device.

27. The method for forming a phase shifter unit according to claim 20, wherein: The conductive layer is in electrical contact with a portion of the first sub-portion, including: the conductive layer is in electrical contact with a first side of the phase shifting device.

28. The method for forming a phase shifter unit according to claim 27, wherein: The conductive layer is located on a side of the first substrate close to the phase shift device, and the phase shift device is located on a side of the conductive layer away from the first substrate. The protective layer covers a surface of the phase shift device and a portion of a surface of the conductive layer.

29. The method for forming a phase shifter unit according to claim 20, wherein: The angle between the side wall of the phase shift device and the surface of the first substrate ranges from 90 degrees to 135 degrees.

30. The method for forming a phase shifter unit according to claim 20, wherein: Also includes: A filling layer is formed on the first substrate, and the phase shift device and the conductive layer are located in the filling layer.

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