Compact laminated Blumlein line

Abstract

The invention discloses a microstrip line type laminated Blumlein line, which comprises a plurality of overlapped single-layer structures, and each single-layer structure comprises a first microstrip line, a magnetic dielectric plate, a second microstrip line, a first dielectric plate, a third microstrip line, a second dielectric plate and a fourth microstrip line. According to the compact laminated Blumlein line provided by the invention, the coupling effect of the laminated Blumlein line can be eliminated in a very compact space, so that the laminated Blumlein line which is high in output voltage, small in size and high in energy storage density is obtained.

Description

Technical Field

[0001] The present application relates to the field of pulsed high voltage, and in particular to a compact laminated Blumlein wire. Background Art

[0002] Nanosecond pulse high-voltage sources are widely used in the fields of pulse discharge, particle accelerators, etc. With the development of technology, many applications require nanosecond pulse high-voltage sources to have the characteristics of high output voltage, small size, and high energy storage density. Among them, the pulse high-voltage generating device based on the microstrip line Blumlein line has the characteristics of small size and high energy storage density, and is an important pulse high-voltage generating method. However, the output voltage of a single microstrip line Blumlein line is usually only several thousand volts to tens of kilovolts, which cannot meet the needs of high and medium output voltage in many applications. In order to increase the output voltage, multiple microstrip line Blumlein lines can be stacked, but due to the coupling effect between different Blumlein lines, the output voltage waveform of the microstrip line stacked Blumlein line will be distorted, and the peak value of the single-layer output voltage will also decrease.

[0003] In order to reduce the coupling effect between microstrip line stacked Blumlein lines, the current common method is to increase the spacing between different layers of Blumlein lines. However, increasing the interlayer spacing will increase the overall size of the stacked Blumlein lines, which is not conducive to the miniaturization of microstrip line stacked Blumlein lines and also reduces the energy storage density of microstrip line stacked Blumlein lines. Summary of the invention

[0004] In view of this, the present invention proposes a microstrip line type stacked Blumlein line, which can eliminate the coupling effect of the stacked Blumlein line in a very compact space, thereby obtaining a stacked Blumlein line with high output voltage, small volume and high energy storage density.

[0005] The present invention provides a compact stacked Blumlein line, characterized in that the Blumlein line comprises a plurality of overlapping single-layer structures, wherein the single-layer structures comprise a first microstrip line, a magnetic dielectric plate, a second microstrip line, a first dielectric plate, a third microstrip line, a second dielectric plate and a fourth microstrip line.

[0006] Furthermore, the single-layer structure is arranged from bottom to top according to the first microstrip line, the magnetic dielectric plate, the second microstrip line, the first dielectric plate, the third microstrip line, the second dielectric plate, and the fourth microstrip line.

[0007] Furthermore, the single-layer structure is arranged from bottom to top according to the first microstrip line, the first dielectric plate, the second microstrip line, the magnetic dielectric plate, the third microstrip line, the second dielectric plate, and the fourth microstrip line, which does not affect the effect.

[0008] Furthermore, horizontally adjacent single-layer structures are alternately stacked between different types of microstrip lines or dielectric plates in the vertical direction, which does not affect the effect and can further reduce the gradient generated by the high voltage.

[0009] Furthermore, the first microstrip line, the magnetic dielectric plate, the second microstrip line, the first dielectric plate, the third microstrip line, the second dielectric plate and the fourth microstrip line are fixed by gluing, crimping or welding.

[0010] Furthermore, the relative dielectric constant of the magnetic medium plate is 1-200, and the relative magnetic permeability is 1-10000.

[0011] Furthermore, the magnetic medium plate is formed by a whole piece of magnetic conductive medium or multiple layers of magnetic conductive medium and dielectric medium stacked alternately.

[0012] Furthermore, the relative dielectric constants of the first dielectric plate and the second dielectric plate are 1 to 1000, and the materials are plastic, glass, ceramic or a composite material of multiple components.

[0013] Furthermore, the magnetic medium plate is formed by alternatingly stacking 4 layers of polytetrafluoroethylene plates and 3 layers of magnetic conductive plates.

[0014] Furthermore, the second microstrip line or the third microstrip line is an S-shaped line or a spiral line, wherein the line width is 2 mm and the line spacing is 8 mm. The second microstrip line and the third microstrip line have substantially the same shape, and their routing mode is an S-shaped line or a spiral line, and their line width, spacing and total length are variable.

[0015] Beneficial effects of the present invention:

[0016] The present invention fills magnetic medium between every two layers of stacked Blumlein wires to increase the characteristic impedance between adjacent Blumlein wires, thereby significantly reducing the coupling effect between Blumleins. The compact stacked Blumlein wire structure of the present invention can reduce the coupling effect of stacked Blumlein wires, reduce the volume of nanosecond pulse high-voltage sources, and improve energy storage density and output voltage. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 This is a schematic diagram of the structure of a compact stacked Blumlein line in Example 1 of the present invention;

[0018] Figure 2 This is a schematic diagram of a single-layer structure in an embodiment of the present invention;

[0019] Figure 3 This is a schematic diagram of the structure of a compact stacked Blumlein line in Example 3 of the present invention;

[0020] Figure 4This is a schematic diagram of the structure of the magnetic medium plate in Example 4 of the present invention;

[0021] Figure 5 is a top view of the second microstrip line in Embodiment 5 of the present invention;

[0022] Figure 6 is a top view of the second microstrip line in Embodiment 6 of the present invention;

[0023] In the figure, 1. single-layer structure, 2. first microstrip line, 3. magnetic dielectric plate, 4. second microstrip line, 5. first dielectric plate, 6. third microstrip line, 7. second dielectric plate, 8. fourth microstrip line, 9. tetrafluoroethylene plate, 10. magnetic conductive plate. DETAILED DESCRIPTION

[0024] The present invention is described below in conjunction with the accompanying drawings and embodiments.

[0025] Example 1

[0026] The present invention provides a compact stacked Blumlein line, characterized in that the Blumlein line comprises a plurality of overlapping single-layer structures 1, wherein the single-layer structure 1 comprises a first microstrip line 2, a magnetic dielectric plate 3, a second microstrip line 4, a first dielectric plate 5, a third microstrip line 6, a second dielectric plate 7 and a fourth microstrip line 8. Figure 1 Schematic diagram of the compact stacked Blumlein line structure in Example 1 of the present invention. Figure 2 Schematic diagram of a single-layer structure in an embodiment of the present invention.

[0027] Furthermore, the single-layer structure 1 is arranged from bottom to top according to the first microstrip line 2 , the magnetic dielectric plate 3 , the second microstrip line 4 , the first dielectric plate 5 , the third microstrip line 6 , the second dielectric plate 7 , and the fourth microstrip line 8 .

[0028] Example 2

[0029] Furthermore, the single-layer structure 1 is arranged from bottom to top according to the first microstrip line 2, the first dielectric plate 5, the second microstrip line 4, the magnetic dielectric plate 3, the third microstrip line 6, the second dielectric plate 7, and the fourth microstrip line 8. This does not affect the effect.

[0030] Example 3

[0031] Figure 3 Schematic diagram of the compact stacked Blumlein line structure in Example 3 of the present invention.

[0032] Furthermore, horizontally adjacent single-layer structures 1 are alternately stacked between different types of microstrip lines or dielectric plates in the vertical direction, which does not affect the effect and can further reduce the gradient generated by the high voltage.

[0033] Furthermore, the first microstrip line 2, the magnetic dielectric plate 3, the second microstrip line 4, the first dielectric plate 5, the third microstrip line 6, the second dielectric plate 7 and the fourth microstrip line 8 are fixed by gluing, crimping or welding.

[0034] Furthermore, the relative dielectric constant of the magnetic medium plate 3 is 1-200, and the relative magnetic permeability is 1-10000.

[0035] Example 4

[0036] Figure 4 This is a schematic diagram of the structure of the magnetic medium plate in Example 4 of the present invention.

[0037] Furthermore, the magnetic medium plate 3 is formed by a whole piece of magnetic conductive medium or multiple layers of magnetic conductive medium and dielectric medium stacked alternately.

[0038] Furthermore, the relative dielectric constant of the first dielectric plate 5 and the second dielectric plate 7 is 1-1000, and the material is plastic, glass, ceramic or a composite material of multiple components.

[0039] Furthermore, the magnetic medium plate 3 is formed by alternatingly stacking four layers of polytetrafluoroethylene plates 9 and three layers of magnetic conductive plates 10 .

[0040] Example 5

[0041] Figure 5 This is a top view of the second microstrip line in Example 5 of the present invention.

[0042] Further, the second microstrip line 4 or the third microstrip line 6 is an S-shaped line, wherein the line width is 2 mm and the line spacing is 8 mm. The second microstrip line 4 and the third microstrip line 6 have substantially the same shape, and their routing mode is an S-shaped line or a spiral line, and their line width, spacing and total length are variable.

[0043] Example 6

[0044] Figure 6 This is a top view of the second microstrip line in Example 6 of the present invention.

[0045] Further, the second microstrip line 4 or the third microstrip line 6 is a spiral line, wherein the line width is 2 mm and the line spacing is 8 mm. The second microstrip line 4 and the third microstrip line 6 have substantially the same shape, and their routing mode is an S-shaped line or a spiral line, and their line width, spacing and total length are variable.

[0046] The present invention is described in detail above in combination with specific implementation methods and exemplary examples. The above description is exemplary, not exhaustive, and is not limited to the disclosed embodiments; the above description cannot be understood as limiting the present invention. Those skilled in the art understand that, without departing from the spirit and scope of the present invention, the technical solution of the present invention and its implementation methods may be subjected to a variety of equivalent substitutions, modifications or improvements, all of which fall within the scope of the present invention; the protection scope of the present invention shall be subject to the attached claims.

Claims

1. A compact laminated Blumlein line, characterized in that The Blumlein line comprises a plurality of overlapping single-layer structures (1), wherein the single-layer structure (1) comprises a first microstrip line (2), a magnetic dielectric plate (3), a second microstrip line (4), a first dielectric plate (5), a third microstrip line (6), a second dielectric plate (7) and a fourth microstrip line (8).

2. A compact laminated Blumlein line according to claim 1, characterized in that: The single-layer structure (1) is arranged from bottom to top according to the first microstrip line (2), the magnetic medium plate (3), the second microstrip line (4), the first dielectric plate (5), the third microstrip line (6), the second dielectric plate (7), and the fourth microstrip line (8).

3. A compact laminated Blumlein line according to claim 1, characterized in that: The single-layer structure (1) is arranged from bottom to top according to the first microstrip line (2), the first dielectric plate (5), the second microstrip line (4), the magnetic dielectric plate (3), the third microstrip line (6), the second dielectric plate (7), and the fourth microstrip line (8).

4. A compact laminated Blumlein line according to any one of claims 1 to 3, characterized in that: The horizontally adjacent single-layer structures (1) are alternately stacked between different types of microstrip lines or dielectric plates in the vertical direction.

5. A compact laminated Blumlein line according to any one of claims 1 to 3, characterized in that: The first microstrip line (2), the magnetic medium plate (3), the second microstrip line (4), the first medium plate (5), the third microstrip line (6), the second medium plate (7) and the fourth microstrip line (8) are fixed by gluing, crimping or welding.

6. A compact laminated Blumlein line according to any one of claims 1 to 3, characterized in that: The relative dielectric constant of the magnetic medium plate (3) is 1 to 200, and the relative magnetic permeability is 1 to 10000.

7. A compact laminated Blumlein line according to any one of claims 1 to 3, characterized in that: The magnetic medium plate (3) is made of a whole piece of magnetic conductive medium or multiple layers of magnetic conductive medium and dielectric medium stacked alternately.

8. A compact laminated Blumlein line according to any one of claims 1 to 3, characterized in that: The relative dielectric constant of the first dielectric plate (5) and the second dielectric plate (7) is 1 to 1000, and the material is plastic, glass, ceramic or a composite material of multiple components.

9. A compact laminated Blumlein line according to any one of claims 1 to 3, characterized in that: The magnetic medium plate (3) is formed by alternatingly stacking four layers of polytetrafluoroethylene plates (9) and three layers of magnetic conductive plates (10).

10. A compact laminated Blumlein line according to any one of claims 1 to 3, characterized in that: The second microstrip line (4) or the third microstrip line (6) is an S-shaped line or a spiral line, wherein the line width is 2 mm and the line spacing is 8 mm.

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