A semiconductor laser therapeutic apparatus for spinal nerve injury

Abstract

The present invention discloses a semiconductor laser therapeutic apparatus for spinal nerve injury, which uses a continuous semiconductor laser to achieve the conversion of electricity and light and complete the treatment of spinal nerve injury diseases. This device is a laser therapy product integrating multiple technologies such as laser technology, electronic technology, computer science, and medicine. The underlying technical mechanism related to the therapeutic apparatus of the present invention is to use a microprocessor to control the laser power supply, provide an adjustable constant current for the semiconductor laser module, the laser diode inside the semiconductor laser module converts electrical energy into light energy, continuously outputs laser with a constant wavelength, and irradiates the damaged nerves and tissues through a specific device structure to achieve the effect of promoting the repair of spinal nerve injury.

Description

Technical Field

[0001] The present invention belongs to the field of medical devices, and particularly relates to a semiconductor laser therapeutic apparatus for treating spinal nerve injury by irradiating with weak laser. Background Art

[0002] Spinal cord injury (SCI) is damage to the spinal cord structure and its functions caused by various different injury factors, resulting in dysfunctions (such as movement, sensation, reflex, etc.) below the injury plane. It is characterized by a high disability rate and poor prognosis, making SCI one of the main diseases endangering the health of the people.

[0003] There are various causes of spinal nerve injury. Some are caused by degenerative diseases, such as cervical spinal stenosis, thoracic spinal stenosis, and lumbar disc herniation. There are also spinal nerve injuries caused by trauma, and common ones are various high-energy impact injuries, such as falls from heights and car accidents. In addition, spinal deformities, spinal infections, and spinal tumors may all cause spinal nerve injury to varying degrees.

[0004] According to the pathology after spinal nerve injury, it can be divided into primary spinal nerve injury and secondary spinal nerve injury. Primary injury is directly caused by vertebral fracture displacement 、 and various diseases such as spinal stenosis and disc herniation. Primary injury triggers a series of downstream cellular reactions (such as microcirculation disorders, inflammatory infiltration, neuronal apoptosis, etc.), thus leading to secondary spinal cord injury. Secondary spinal nerve injury refers to various adverse events that occur over time after primary injury. From early bleeding, edema, and self-acute inflammatory reactions, to mid-term microcirculation disorders, calcium ion influx, and free radical formation, and even to late-stage secondary ischemia and hypoxia, demyelination of nerves, and formation of glial scars, all may occur singly or simultaneously.

[0005] After spinal nerve injury, the characteristic that neurons are difficult to regenerate, combined with the combined action of various inhibitory factors after injury, makes the regeneration of nerve tissue extremely difficult, resulting in complete or partial loss of nerve function, loss of innervation of target organs, and ultimately manifested as malnutrition, severe atrophy, and motor dysfunction of muscle tissue, as well as loss of sensory function and autonomic nerve dysfunction in the nerve innervation area. This brings a series of complications, leading to a very poor prognosis for spinal nerve injury, bringing physical and mental pain to spinal nerve injury patients, and also bringing economic and mental burdens in nursing and treatment to the patients' families.

[0006] In the past four decades, surgery has remained the main treatment for acute and chronic spinal nerve injuries. According to publicly available data, the annual number of spinal surgeries in the country reached 1.4 million in 2019. Trauma and degeneration are the two main causes of surgery, among which cervical spondylosis, lumbar disc herniation, and compression fractures are the diseases with relatively high proportions of surgical volume. And the annual demand for surgeries due to spinal problems reaches tens of millions of cases. Although surgical techniques have made great progress, after central nervous system injury, the existing treatment plans still follow past experience. By removing compressive factors such as fracture fragments and spinal canal stenosis through surgery, the recovery of spinal nerve injuries mainly relies on drugs, acupuncture, physical therapy, and massage, and their curative effects are not satisfactory. Medical workers have also tried various repair treatments including hormone shock, anti-inflammatory drugs, nerve nutrition, nerve cell transplantation, and implantation of tissue engineering materials, but there is currently no reliable and effective treatment method that can completely restore the functions of patients with spinal nerve injuries. This is also one of the reasons for the increase in doctor-patient conflicts regarding such diseases at the present stage. Medical staff and patients are both eager to have a rehabilitation method directly targeting the damaged spinal cord to effectively accelerate and improve the degree of spinal cord recovery. Therefore, the repair after central nerve injury remains a major challenge in the field of rehabilitation medicine.

[0007] Weak lasers have been applied to clinical scientific research by relevant researchers because of their various photochemical and biological stimulation effects such as anti-inflammatory, analgesic, and promoting injury repair, as well as their non-invasive characteristics. We hope to provide more rehabilitation means and opportunities for patients with spinal nerve injuries through biolaser, and the input-output ratio of this treatment is easily acceptable to clinicians and patients.

[0008] However, in the existing scientific research progress, the related supporting equipment used in percutaneous irradiation or intravascular irradiation technologies and other such technologies still has the following defects. First, the percutaneous irradiation technology makes it difficult for light to reach the spinal cord surface, affecting the absorption of spinal cord tissue and limiting the bioregulatory effect of light. For the intravascular irradiation technology, since the irradiation components will remain in the blood vessels for a long time, it is easy to increase the risks of postoperative infection and blood-borne infection. Second, semiconductor lasers are prone to catastrophic optical cavity surface damage and other phenomena, resulting in power attenuation or premature failure of semiconductor lasers, and the output wavelength of semiconductor lasers is easily affected by the external environment and undergoes wavelength drift. Third, the controllability of the output power pulse width of semiconductor lasers is relatively poor, and the output power and pulse width cannot be continuously and precisely controlled, affecting the efficiency and effect of treating spinal nerve injuries. Fourth, within the specified service life of semiconductor lasers, they cannot ensure reliable operation, affecting the expected treatment effect.

[0009] For the postoperative rehabilitation of spinal nerve tissue injuries at deeper positions, such as traumatic spinal nerve injuries, cervical spondylosis, thoracic and lumbar spinal canal stenosis, lumbar disc herniation, etc., there is currently no suitable treatment equipment. Summary of the Invention

[0010] In view of the problems or technical defects existing in the prior art, the purpose of the present invention is to provide a semiconductor laser therapeutic apparatus for spinal nerve injury, which uses a continuous semiconductor laser to realize the conversion of electricity and light and complete the treatment of spinal nerve injury diseases. This device is a laser therapy product integrating multiple technologies such as laser technology, electronic technology, computer science, and medicine.

[0011] The underlying technical mechanism related to the therapeutic apparatus of the present invention is to use a microprocessor to control the laser power supply, provide an adjustable constant current for the semiconductor laser module, and the laser diode inside the semiconductor laser module converts electrical energy into light energy, continuously outputting laser with a constant wavelength. Through a specific device structure, the damaged nerves and tissues are irradiated to achieve the effect of promoting the repair of spinal nerve injury.

[0012] However, how to stably and sustainably develop the relevant technical logic into a product and truly move it from the laboratory stage to relevant treatment use places such as hospitals poses higher requirements for the repeatability, stability, etc. of scientific instruments. With the increase in the number of observation samples and the more specific and diverse application requirements, the engineering and technical problems faced in product R & D are also increasing. How to systematically solve this series of problems is a common challenge faced by front-line R & D technicians. The specific problems we encountered in the actual R & D process include:

[0013] 1. Reliability of semiconductor lasers. Combining the optical feedback adjustment function, how to effectively improve the reliability, working stability and anti-interference ability of semiconductor lasers.

[0014] 2. Miniaturization of the device. On the premise of ensuring the reliability of the device, how to achieve multi-functional use of one device, enable one device to treat multiple patients at the same time, and achieve miniaturization, light weight and intelligence of the device.

[0015] 3. Power stability. How to improve the efficiency of the semiconductor laser in converting electrical energy into light energy, ensure the stability of the laser output power, and precisely control the output power and pulse width.

[0016] 4. How to improve the heat dissipation efficiency of the semiconductor laser on the premise of reducing the volume.

[0017] To solve the relevant problems or technical defects of the prior art, the present invention provides a semiconductor laser therapeutic apparatus for spinal nerve injury. Compared with the prior art, this device has the following technical advantages:

[0018] At the hardware level:

[0019] 1. Integrating laser technology, electronic technology, computer science, and medicine, using a continuous semiconductor laser to realize the conversion of electricity and light, and achieving the effect of promoting the repair of spinal nerve injury through the biological effect of weak laser.

[0020] 2. Design an integrated and detachable set of equipment with replaceable treatment optical fibers. Realize the separate management of the main unit and consumables, and flexibly select different types of treatment optical fibers according to the patient's condition.

[0021] 3. The semiconductor laser contained in the treatment instrument of the present invention adopts a dual-chip integrated structure, which can ensure the stable laser output power on the premise that the power of one of the semiconductor chips decays or fails.

[0022] 4. The semiconductor laser contained in the treatment instrument of the present invention uses phase change heat dissipation, which can effectively reduce the volume and improve the heat dissipation efficiency.

[0023] Software level:

[0024] 1. The semiconductor laser contained in the treatment instrument of the present invention effectively filters out high-order mode lasers, compresses the spot divergence angle, improves the output power, and is easy to realize fiber coupling output through the mode selection and superlens collimation and focusing methods.

[0025] 2. The semiconductor laser contained in the treatment instrument of the present invention improves the power stability and reliability of the system by applying feedback and dynamic control methods to the upper and lower semiconductor chips simultaneously.

[0026] 3. The power supply system of the semiconductor laser of the treatment instrument of the present invention forms a current regulation loop with power devices, adjusts the power devices through a microprocessor control device to change the magnitude of the output current, thereby controlling the magnitude of the output laser energy and the working pulse width, and outputs a current sampling signal through a feedback loop and transmits it to the microprocessor for real-time monitoring. Description of the Drawings

[0027] Figure 1 It is a system block diagram of the treatment instrument of the present invention.

[0028] Figure 2 It is a schematic structural diagram of the semiconductor laser contained in the treatment instrument of the present invention.

[0029] Figure 3 It is a schematic diagram of the power supply drive feedback system of the semiconductor laser contained in the treatment instrument of the present invention.

[0030] Figure 4 It is a schematic structural diagram of the heat sink of the semiconductor laser contained in the treatment instrument of the present invention.

[0031] Figure 5 It is a schematic diagram of the structural principle of the heat sink of the semiconductor laser contained in the treatment instrument of the present invention.

[0032] Figure 6 It is a wiring diagram of the whole treatment instrument of the present invention.

[0033] Figure 7a A flowchart of a feedback control strategy for the semiconductor laser included in the therapeutic apparatus of the present invention; Figure 7b Another flowchart of a feedback control strategy for the semiconductor laser included in the therapeutic apparatus of the present invention.

[0034] Figure 8 A front view of the product structure and a schematic diagram of the internal structure of the therapeutic apparatus of the present invention.

[0035] Figure 9 A rear view of the product structure of the therapeutic apparatus of the present invention.

[0036] Figure 10 A partial cross-sectional view of the product structure of the therapeutic apparatus of the present invention.

[0037] Figure 11 Power test results of the semiconductor laser included in the therapeutic apparatus of the present invention.

[0038] Figure 12 Spectral test results of the semiconductor laser included in the therapeutic apparatus of the present invention.

[0039] Figure 13 Lifetime test results of the semiconductor laser included in the therapeutic apparatus of the present invention. The meanings of the symbols and numbers in the figure are as follows:

[0040] A Control touch screen; B Microprocessor control device; C Semiconductor laser; D Safety alarm system; E ID card recognition system; F Power supply module; G Safety protection device; H Jumper optical fiber;

[0041] B-1 Main control board; B-2 Industrial control computer; B-3 First relay; B-4 Second relay;

[0042] C-1 Power supply drive feedback system; C-2 Upper heat sink; C-3 Upper semiconductor chip; C-4 Lower heat sink; C-5 Lower semiconductor chip; C-6 Insulating separation layer; C-7 Double-layer collimating mirror; C-8 Collimation module; C-9 Upper beam splitting module; C-10 Lower beam splitting module; C-11 Upper power sensor; C-12 Lower power sensor; C-13 Upper feedback circuit; C-14 Lower feedback circuit; C-15 Optical mode selection module; C-16 Collimation and focusing module; C-17 Optical fiber coupling connector; C-21 First power supply drive module; C-22 Second power supply drive module; C-23 Positive electrode of the first power supply drive module; C-24 Negative electrode of the first power supply drive module; C-25 Negative electrode of the second power supply drive module; C-26 Positive electrode of the second power supply drive module; C-27 Feedback control module.

[0043] C-31 Heat sink core; C-32 Heat sink wick; C-33 Heat sink shell; C-34 Steam; C-35 Liquid;

[0044] D-1 Alarm indicator light;

[0045] E-1 ID card reader;

[0046] F-1 Self-locking pushbutton switch; F-2 Equipment power cord; F-3 Switching power supply;

[0047] G-1 Metal emergency stop pushbutton switch; G-2 Overcurrent protector; G-3 Semiconductor laser interlock device; G-4 Temperature sensor; G-5 Heat sink; G-6 Fan; G-7 Filter;

[0048] H-1 First jumper fiber optic handle; H-2 Second jumper fiber optic handle;

[0049] I-1 Handle status indicator light; I-2 Automatic identification probe. Detailed implementation mode

[0050] The following further elaborates on the specific content of the present invention in conjunction with the attached drawings. It should be noted that structures that are equivalent transformations based on the same technical concept of the present invention all fall within the scope of protection claimed by the present invention.

[0051] See Figure 1 、 Figure 6 、 Figures 8 - 10 For the semiconductor laser therapeutic apparatus for spinal nerve injury of the present invention, it at least includes a semiconductor laser C, a power supply module F, a microprocessor control device B, and a control touch screen A. Among them, the microprocessor control device B is respectively connected to the semiconductor laser C and the control touch screen A, and the semiconductor laser C is connected to the jumper fiber optic H; the power supply module F is respectively connected to the control touch screen A, the microprocessor control device B, and the semiconductor laser C.

[0052] The microprocessor control device B is also connected to the safety protection device G, and the safety protection device G is respectively connected to the semiconductor laser C and the power supply module F.

[0053] The microprocessor control device includes a main control board B-1, a computerized industrial control machine B-2 (either and / or), a first relay B-3, and a second relay B-4. The main control board B-1 and / or the computerized industrial control machine B-2 are components for controlling the operation of the therapeutic instrument and executing commands. The computerized industrial control machine B-2 can also be reduced in configuration according to the situation. The first relay B-3 and the second relay B-4 are respectively used to control the power supply of the fan and the laser generator power module, ensuring that the fan only starts working when the surface temperature of the laser generator detected by the temperature sensor exceeds the upper limit set by the program and stops working when the temperature drops to the nominal temperature set inside, which can save some power resources; the laser generator power module can only supply power to the laser generator and emit therapeutic laser after the device is reliably connected to the treatment optical fiber and the treatment parameters are set, preventing accidental triggering of the laser generator from causing harm to operators or other personnel.

[0054] The safety alarm system includes an alarm indicator D-1 for displaying the operating status of the device and reminding of dangerous situations. The microprocessor control device B is also connected to an ID card recognition system E, which includes an ID card reader E-1. The ID card reader E-1 is a convenient way to input information. The purpose is to quickly and accurately input the patient's identity information, associate the treatment records with the patient's identity information, and facilitate the quick and accurate retrieval and search of previous treatment records before subsequent treatments, serving as a reference for modifying subsequent treatment plans. If there is no ID card, manual input can also be used to achieve the above purposes.

[0055] The power module includes a metal self-locking push-button switch F-1, a device power cord F-2, and a switching power supply F-3. The metal self-locking push-button switch F-1 is the main power switch of the device, and the device power connection cord F-2 is the connection device between the device and the external power supply. The switching power supply F-3 is respectively connected to the control touch screen A and the main control board B-1, and the main control board B-1 is connected to the ID card reader E-1; when the computerized industrial control machine B-2 is selected for configuration, the switching power supply F-3 is respectively connected to the control touch screen A, the computerized industrial control machine B-2, and the main control board B-1. The computerized industrial control machine B-2 is respectively connected to the control touch screen A and the main control board B-1, and the computerized industrial control machine B-2 is connected to the ID card reader E-1.

[0056] The switching power supply F-3 converts 220V alternating current into stable direct current and supplies it to the control touch screen A, the computerized industrial control machine B-2, and the main control board B-1 respectively for their respective working power supplies.

[0057] The safety protection device at least includes a metal emergency stop button switch G-1, an overcurrent protector G-2, a semiconductor laser interlock device G-3, a temperature sensor G-4, a fan G-6, and a filter G-7. The metal emergency stop button switch G-1 is a device used to quickly cut off the power supply of the equipment in case of an emergency, preventing uncontrollable damage or injury. The overcurrent protector G-2 is used to prevent the equipment from being damaged when the current of the external power supply fluctuates greatly and exceeds the maximum current allowed by the equipment components; the semiconductor laser interlock device G-3 is mainly used to prevent the equipment from being in a live state during equipment maintenance, and the accidental triggering of the laser causes harm to the maintenance personnel. The laser interlock device G-3 can cut off the power supply module of the laser, disconnect the circuit supplying power to the laser generator. When the equipment is in a live state, the semiconductor laser generator cannot emit laser, ensuring that the product meets the safety detection standards of laser medical devices. The temperature sensor G-4 is used to monitor the external surface temperature of the laser generator during operation, and can control the operating temperature of the laser generator C not to exceed the upper limit of the allowable optimal operating temperature, preventing the laser generator from being damaged by high temperature. The fan G-6 is an over-temperature cooling device on the surface of the semiconductor laser generator C. The fan G-6 and the heat sink G-5 together form a heat dissipation device. The laser generator transfers heat to the heat sink through thermal conductive adhesive. The heat sink G-5 quickly transfers the local heat to other parts of the heat sink G-5, reducing the heat density by increasing the surface area. The fan G-6 blows the cold air outside onto the heat sink G-5 to accelerate air circulation and take away the heat on the heat sink, achieving the effect of rapid cooling. The filter G-7 is used to improve the anti-interference ability of the treatment equipment and ensure the stable operation of the equipment.

[0058] The equipment power connection line F-2, overcurrent protector G-2, filter G-7, metal emergency stop button switch G-1, and switching power supply F-3 of the present invention are connected in sequence. The switching power supply F-3 is respectively connected to the control touch screen A and the main control board B-1. The main control board B-1 is connected to the ID card reader E-1; when the industrial computer B-2 is selected for configuration, the switching power supply F-3 is respectively connected to the control touch screen A, the industrial computer B-2, and the main control board B-1. The industrial computer B-2 is respectively connected and communicated with the control touch screen A and the main control board B-1, and the industrial computer B-2 is connected to the ID card reader E-1. On the one hand, the main control board B-1 respectively controls the temperature sensor G-4, the alarm indicator D-1, the handle status indicator I-1, and the automatic identification probe I-2 through parallel connection; on the other hand, the main control board B-1 also controls the first relay B-4 and the second relay B-3 through two lines respectively. The first relay B-4 is connected to the fan G-6; the metal self-locking button switch F-1 is connected in sequence to the second relay B-3, the laser power supply drive feedback system C-1, the semiconductor laser, and the jumper optical fiber; the laser interlock device G-3 is connected to the laser power supply drive feedback system C-1.

[0059] The microprocessor control device B controls the laser power supply to provide an adjustable constant current for the semiconductor laser C. The laser diode inside the semiconductor laser module converts electrical energy into light energy and outputs laser light with a wavelength of 600nm - 1200nm. By irradiating the damaged nerves and tissues, this laser beam utilizes the photochemical and biological stimulation effects of the laser on human tissues to promote and accelerate the nerve repair function, improve blood circulation, reduce edema, and reduce the autoimmune inflammatory response, ultimately achieving the effect of promoting the repair of spinal nerve injuries and realizing the biological laser treatment of acute and chronic spinal nerve injuries.

[0060] The power supply module F includes a metal self-locking push-button switch F-1, a device power cord F-2, and a switching power supply F-3. The power supply module F is respectively connected to the semiconductor laser C, the control touch screen A, and the microprocessor control device B. The fixed connection wire at the rear of the therapeutic instrument is used to connect to the external power supply part.

[0061] The power supply module F provides working current for the microprocessor control device B and the control touch screen A, while the on / off of the semiconductor laser is controlled by the treatment optical fiber automatic recognition device on the handle of the jumper optical fiber H. Only when the device and the treatment optical fiber are reliably connected, the microprocessor control device B controls the second relay B-3 to connect the laser power supply drive feedback system C-1 and the semiconductor laser C. The power-on, standby, and light-emitting processes of the semiconductor laser C are all monitored by the microprocessor control device B, thus making the operation of the therapeutic instrument more stable and reliable.

[0062] The power supply drive feedback system C-1 of the semiconductor laser C uses power devices to form a current regulation loop. By adjusting the power devices through the microprocessor control device B, the magnitude of the output current is changed, thereby controlling the magnitude of the output laser energy and the working pulse width, and a current sampling signal is output by the feedback loop and transmitted to the microprocessor control device B for real-time monitoring.

[0063] The microprocessor control device B detects, monitors, and controls the entire loop state of the power-on, standby, and light-emitting processes of the semiconductor laser C through the current regulation loop formed by controlling the power devices, and displays fault information through the control touch screen A, facilitating users and equipment maintenance personnel to master the real-time working state of the therapeutic instrument.

[0064] See Figure 2, the semiconductor laser included in the therapeutic apparatus of the present invention comprises a power supply drive feedback system C-1, the power supply drive feedback system C-1 is respectively connected to an upper semiconductor chip C-3 and a lower semiconductor chip C-5, the lasers generated by the upper semiconductor chip C-3 and the lower semiconductor chip C-5 are respectively collimated by a double-layer collimating mirror C-7, and are divided into two beams of laser in the vertical and horizontal directions through an upper beam splitting module C-9 and a lower beam splitting module C-10. The laser in the vertical direction is respectively transmitted to an upper power sensor C-11 and a lower power sensor C-12, and then is respectively connected to the power supply drive feedback system C-1 through an upper feedback circuit C-13 and a lower feedback circuit C-14; the laser in the horizontal direction is filtered by a mode selector C-15 to remove the outgoing light of the high-order mode, collimated and focused by a superlens C-16, and is incident into a jumper optical fiber H through an optical fiber coupling connector C-17, and finally the laser is output through the jumper optical fiber H.

[0065] See Figure 3 , the power supply drive feedback system C-1 of the semiconductor laser in the semiconductor laser therapeutic apparatus of the present invention includes two independent power supply drive modules and one feedback module. The first power supply drive module C-21 includes a positive electrode C-23 and a negative electrode C-24, and the second power supply drive module C-22 includes a negative electrode C-25 and a positive electrode C-26. C-27 is the feedback module of the power supply drive feedback system.

[0066] The upper semiconductor chip C-3 is connected to the positive electrode C-23 of the first power supply drive module C-21, and the upper heat sink C-2 is connected to the negative electrode C-24 of the first power supply drive module C-21. The lower semiconductor chip C-5 is connected to the positive electrode C-26 of the second power supply drive module C-22, and the lower heat sink C-4 is connected to the negative electrode C-25 of the second power supply drive module C-22. Circuit insulation is achieved between the upper heat sink C-2 and the lower semiconductor chip C-5 through an insulating separation layer C-6 to avoid mutual interference between the upper and lower chips.

[0067] See Figure 4 、 Figure 5, in the semiconductor laser in the semiconductor laser therapeutic apparatus of the present invention, the upper heat sink C-2 and the lower heat sink C-4 adopt a phase change heat dissipation structure, which can effectively improve the heat dissipation efficiency. The phase change heat dissipation structure includes a heat sink shell C-33, a heat sink core C-31 is sleeved inside the heat sink shell C-33, a heat sink liquid absorption core C-32 with a porous capillary structure is inlaid on the inner wall of the heat sink core C-31, one end of the heat sink core C-31 is an evaporation section, and the other end is a condensation section. When one end of the heat sink core C-31 is heated, the working liquid of the heat sink liquid absorption core C-32 evaporates and vaporizes, evaporating into steam C-34 at the (liquid-vapor) interface in the evaporation section. The steam C-34 flows to the other end under a small pressure difference to release heat and condenses into liquid C-35. The steam C-34 flows from the evaporation section to the condensation section; the steam C-34 condenses at the vapor-liquid interface in the condensation section; the heat is transferred from the (vapor-liquid) interface to the outside through the heat sink liquid absorption core C-32, the liquid C-35 and the heat sink shell C-33, and the liquid C-35 then flows back to the evaporation section along the porous capillary structure by the action of capillary suction.

[0068] See Figure 2 , the lasers emitted by the upper semiconductor chip C-3 and the lower semiconductor chip C-5 have a relatively large divergence angle, and are collimated by a double-layer collimating mirror C-7 to compress the divergence angles of the fast and slow axes to within 0.5°. Then, it is incident on the beam splitting module C-9 through a focusing mirror. Among them, the light emitted by the upper semiconductor chip C-3 is split into two beams of light in the vertical and horizontal directions by the beam splitting module C-9, and the light intensity ratio in the vertical and horizontal directions is 5:95. The light in the vertical direction is incident on the upper power sensor C-11, and its main function is to realize real-time power monitoring and feedback. The monitoring signal is transmitted to the feedback module C-27 of the power supply drive feedback system C-1 through the feedback circuit C-13, and the feedback module C-27 provides a feedback signal to the power supply drive system C-1. Among them, the light emitted by the lower semiconductor chip C-5 is split into two beams of light in the vertical and horizontal directions by the beam splitting module C-10, and the light intensity ratio in the vertical and horizontal directions is 5:95. The light in the vertical direction is incident on the lower power sensor C-12, and its main function is to realize real-time power monitoring and feedback. The monitoring signal is transmitted to the feedback module C-27 of the power supply drive feedback system C-1 through the feedback circuit C-14, and the feedback module C-27 provides a feedback signal to the power supply drive system C-1.

[0069] The lasers emitted horizontally from the beam splitting module C-9 and the beam splitting module C-10 are further filtered to remove the light emitted in the higher-order mode by the mode selector C-15 to achieve high-efficiency output. Then, beam collimation and focusing are realized through the superlens C-16, and it is incident into the jumper fiber H through the fiber optic coupling connector C-17, and finally the laser is output through the jumper fiber H.

[0070] See Figure 7a andFigure 7b , for the semiconductor laser therapeutic apparatus of the present invention, the power feedback module C-27 of the semiconductor laser executes the following feedback control method, and the process is as follows:

[0071] When the semiconductor laser starts to work, set the output current of the upper semiconductor chip C-3 and the output current of the lower semiconductor chip C-5 to be the same, so that the sum of the output power P1 of the upper semiconductor chip C-3 and the output power P2 of the lower semiconductor chip C-5 is equal to the set value P set ; where P1, P2, P set The maximum value is equal to the maximum power output by the upper semiconductor chip C-3 or the lower semiconductor chip C-5.

[0072] The calculation methods for the output power P1 of the upper semiconductor chip C-3 and the output power P2 of the lower semiconductor chip C-5 are as follows:

[0073] P1 = k1 × PM1 (1)

[0074] P2 = k2 × PM2 (2)

[0075] k1 and k2 are the calibration coefficients of the upper power sensor C-11 and the lower power sensor C-12, which are obtained by calibration with a standard light source with known power.

[0076] During the operation of the laser module, monitor the powers PM1 and PM2 of the upper power sensor C-11 and the lower power sensor C-12 every 5 - 10 s, and calculate the output power P1 of the upper semiconductor chip C-3 and the output power P2 of the lower semiconductor chip C-5 according to formulas (1) and (2).

[0077] If the output power P1 of the upper semiconductor chip C-3 is less than P set / 2, or the output power P2 of the lower semiconductor chip C-5 is less than P set / 2, increase the output current of the corresponding circuit drive module until the laser output power is equal to the set value P set ; if adjusting the current of the upper semiconductor chip C-3 cannot reach P set / 2 or adjusting the current of the lower semiconductor chip C-5 cannot reach P set / 2, then increase the current of the other path until P1 + P2 = P set ; if by adjusting the currents of the upper semiconductor chip C-3 and the lower semiconductor chip C-5, the set value P set cannot be reached, then determine that the semiconductor laser fails as a whole.

[0078] If the output power P1 of the upper semiconductor chip C-3 is greater than P set / 2, or the output power P2 of the lower semiconductor chip C-5 is greater than P set / 2, and reduce the output current of the corresponding circuit driving module until the output power of the laser is equal to the set value P set ; If adjusting the current of the upper semiconductor chip C-3 cannot reach P set / 2, or adjusting the current of the lower semiconductor chip C-5 cannot reach P set / 2, then it is determined that the upper semiconductor chip C-3 or the lower semiconductor chip C-5 fails, set the current of the failed circuit to zero, and at the same time increase the current of the other path until P2 = P set or P1 = P set ; If the set value P cannot be reached by adjusting the current of the other path either set , then it is determined that the semiconductor laser fails as a whole.

[0079] For the semiconductor laser therapeutic apparatus of the present invention, the power feedback module C-27 of the semiconductor laser executes another feedback control method, and the process is as follows:

[0080] When the semiconductor laser starts to work, set the output currents of the upper semiconductor chip C-3 and the lower semiconductor chip C-5 to be the same; make the sum of the output power P1 of the upper semiconductor chip C-3 and the output power P2 of the lower semiconductor chip C-5 equal to the set value P set ; where P1, P2, P set The maximum value is equal to the maximum power output by the upper semiconductor chip C-3 or the lower semiconductor chip C-5.

[0081] The calculation methods for the output power P1 of the upper semiconductor chip C-3 and the output power P2 of the lower semiconductor chip C-5 are as follows:

[0082] P1 = k1 × PM1 (1)

[0083] P2 = k2 × PM2 (2)

[0084] k1 and k2 are the calibration coefficients of the upper power sensor C-11 and the lower power sensor C-12, and are obtained by calibrating with a standard light source with known power.

[0085] During the operation of the laser module, monitor the powers PM1 and PM2 of the upper power sensor C-11 and the lower power sensor C-12 every 5 - 10 s, and calculate the output power P1 of the upper semiconductor chip C-3 and the output power P2 of the lower semiconductor chip C-5 according to formula (1) and formula (2).

[0086] If P1 + P2 is less than the set value P set, increase the output current of the upper semiconductor chip C-3 until the output power of the semiconductor laser is equal to the set value P set ; If the output power of the semiconductor laser cannot reach the set value P by adjusting the upper semiconductor chip C-3 set , then the power of the upper semiconductor chip C-3 decays, and increase the output current of the lower semiconductor chip C-5 until the output power P1+P2 of the semiconductor laser is equal to the set value P set ; If the set value P cannot be reached by adjusting the output circuits of both chips set , then it is determined that the semiconductor laser fails as a whole.

[0087] If P1+P2 is greater than the set value P set , reduce the output current of the upper semiconductor chip C-3 until the output power of the semiconductor laser is equal to the set value P set ; If the output power of the laser cannot reach the set value P by reducing the upper semiconductor chip C-3 set , then it is determined that the semiconductor laser fails as a whole.

[0088] The above series of improvements to the semiconductor laser C structure of the therapeutic instrument of the present invention have achieved the following technical improvements in terms of the performance of the entire treatment device: First, miniaturization, ensuring the engineering requirements for the overall miniaturization of the therapeutic instrument device. Second, low power consumption. Compared with other types of semiconductor lasers, this semiconductor laser has lower power consumption, meeting the actual use and maintenance requirements of surgical and therapeutic rehabilitation application scenarios. Third, high efficiency, effectively improving the conversion efficiency of the semiconductor laser to convert electrical energy into light energy. Fourth, wavelength stability, the semiconductor laser can achieve a long-term output wavelength that is not easily affected by the external environment and undergoes wavelength drift, and constantly outputs a stable wavelength. Fifth, controllability of the output power pulse width, enabling precise control of the output power and pulse width for different medical treatment methods or diagnostic requirements. Sixth, stability of the lifespan and treatment parameters, the semiconductor laser can provide a long-lasting and reliable power output, ensuring the treatment and rehabilitation needs of various types of patients with spinal nerve injuries.

[0089] See Figures 11 to 13 , Figure 11 shows the power output results of the semiconductor laser module. Under the condition of a current of 0.5 A, the output power of the semiconductor laser module reaches 1.2 W. Figure 12 shows the spectral test results of the semiconductor laser module, and its central wavelength is 808 nm. Figure 13 shows the lifespan test results of the semiconductor laser module. After working for 10,000 hours, the power of the semiconductor laser hardly decays, indicating that the semiconductor laser proposed by the present invention has high reliability and can work stably for a long time.

[0090] Combined with the structural schematic diagram of the product of the present invention, the operation steps of the therapeutic apparatus of the present invention are described as follows:

[0091] S1: Preparation for work: a Connect the device to the power socket in the room. b Check that the emergency stop switch is in the on state. c Check whether the jumper optical fiber H and the treatment handle are detached, broken or have other abnormalities.

[0092] S2: Turn on the device's switch power supply F-3. All treatment commands are issued by the control touch screen A and transmitted to the control part for distribution and execution. After the treatment device is started, it enters the self-check interface. The self-check includes power supply, the temperature of the laser generator power supply drive feedback system C-1, the upper semiconductor chip C-3 and the lower semiconductor chip C-5 of the laser generator, and the maximum current of the laser generator. The device will instantaneously power on the corresponding part to check whether the corresponding part is connected and normal. If there is a fault during the self-check, it will be marked, the program will stay on the self-check interface, and the device cannot be used continuously.

[0093] S3: After the self-check passes, the control touch screen enters the password interface. Enter the correct password to enter the patient information registration interface. The status indicator I-1 of the device handle shows red; the alarm indicator D-1 of the device shows yellow.

[0094] S4: After entering the patient information registration interface, select the registration method or directly click OK to enter the next interface. The display screen of the patient information registration interface is divided into left and right parts (the treatment personnel information of the left handle of the device is registered on the left, and the treatment personnel information of the right handle of the device is registered on the right). There are two registration methods for registering personal information: automatic input and manual input. For automatic input, just place the second-generation ID card in the card swiping area of the device, and the personal information will be automatically filled in; for manual input, enter item by item through the interface buttons according to the interface items. Whether it is automatic input or manual input, the patient's hospitalization number needs to be manually input; after the personal information is entered, click OK to enter the next interface, or you can also click the OK button directly without entering personal information to enter the next interface.

[0095] S5: After the patient information is registered, enter the interface for prompting the connection of the treatment optical fiber and the device. If the connection between the treatment optical fiber and the device is reliable, directly enter the treatment parameter setting interface; if there is a problem with the connection between the treatment optical fiber and the device optical fiber or they are not connected, the interface will use a Flash animation to prompt the method of connecting the optical fiber and the connection. Check the connection and tighten it or make the connection, and the animation will automatically disappear. At the same time, the indicator light of the device handle will change from red to yellow. If the connection is unreliable, the indicator light of the device handle is red.

[0096] S6: In the treatment parameter setting interface, the treatment mode (continuous treatment and pulsed treatment), treatment energy level, and treatment time can be set. Among them, for pulsed treatment, the pulse time and pulse interval also need to be set.

[0097] S7: After setting the treatment parameters and clicking the "Start Treatment" button, a parameter confirmation interface will pop up. Click "OK", and the device will start working. During the treatment process, if it is necessary to adjust the set parameters, click the "Pause" button to stop the treatment, and click on the parameter to be adjusted to reset it. The main control board B-1 supplies power to the control circuit of the semiconductor laser power drive feedback system. The control program will supply power according to the voltage corresponding to the selected energy level. The semiconductor laser generator C will provide laser light energy of different powers according to the provided current magnitude for treatment.

[0098] After setting the treatment parameters and clicking "Start Treatment", a confirmation treatment parameter pop-up window will appear. Click "OK", and the treatment time will start counting down. The device alarm indicator D-1 and the handle status indicator I-1 will change from yellow to green. After working for a period of time, the device will enter the standby state, and the treatment will continue in the background. The treatment time countdown will continue to be displayed on the control touch screen A, and the treatment set parameters will also be presented on the control touch screen A. During the treatment process, the control program of the microprocessor control device B will monitor the voltage supplied to the laser control power supply in real time. When the monitored voltage fluctuation is greater than the voltage range of the energy level, the control program will automatically adjust the output voltage to the nominal value of the voltage corresponding to the energy level.

[0099] S8: When the treatment countdown reaches zero, the control program of the microprocessor control device B controls the relay to disconnect the laser and stop working. The control touch screen A will pop up a treatment end pop-up window. Whether in the standby state or not, a password needs to be entered for the treatment end pop-up window to disappear, and the operation interface will return to the patient information registration interface. The patient's current treatment information will be automatically saved in the patient's treatment record. At the same time, the device will also accumulate the real-time working time of the semiconductor laser generator C. The device has a built-in service life of the laser. When the accumulated time reaches the built-in service life, the device will pop up that the laser has reached the preset value, prompting the user to contact the manufacturer for replacement. When the patient has had previous treatments, after entering the patient's hospital number on the patient information registration interface, the patient's previous treatment parameters will automatically pop up on the parameter setting interface. The operator can click on the treatment information query interface, enter the query password, and enter the patient's name or hospital number on the query interface to query the patient's previous treatment records. Medical staff can evaluate the patient's treatment effect based on the examination results during the treatment process and revise the patient's subsequent treatment parameters according to the treatment effect. During the treatment process, the device will record the treatment parameters in real time to prevent accidental power off and repeated treatment of the patient. After accidentally powering off and restarting the device, the treatment can continue according to the original settings. If the treatment optical fiber is disconnected from the device during the power-off process, the treatment data cannot be restored after restarting.

[0100] S9: After the treatment is over, disconnect the treatment optical fiber from the device and put on a protective cover for the treatment optical fiber; put on a protective cap for the device handle and hang it on the device handle rack.

[0101] S10: Turn off the power switch and unplug the external power plug.

[0102] The semiconductor laser therapeutic apparatus for spinal nerve injury of the present invention is mainly applicable to patients with acute and chronic spinal nerve injury. It can be used to treat diseases such as herniated disc, spinal stenosis, spondylolisthesis or traumatic fracture in each segment of the cervical vertebra, thoracic vertebra, lumbar vertebra and sacral vertebra.

[0103] Research shows that the jumper optical fiber H of the semiconductor laser therapeutic apparatus of the present invention is connected to the medical treatment optical fiber, and the light-emitting section of the medical treatment optical fiber is placed above the spinal cord. Adjust the corresponding treatment parameters and continuously irradiate according to the treatment cycle. The safety and effectiveness of the semiconductor laser therapeutic apparatus for spinal nerve injury are evaluated by vital signs (body temperature, blood pressure, respiratory rate, heart rate, blood oxygen saturation), infection indicators (white blood cells, neutrophils, hypersensitive C-reactive protein, procalcitonin), photosensitivity reaction indicators (eosinophils, basophils), coagulation function indicators (prothrombin time, activated partial thromboplastin time and thrombin time) and the American Spinal Injury Association (ASIA) sensory and motor scores. Three months after the operation, follow-up of the patients was completed. In our study, direct photobiomodulation of the spinal nerve injury site did not cause clinical changes in the patients' vital signs. On the 3rd day after irradiation, there was no significant difference in white blood cells, neutrophils and hypersensitive C-reactive protein between the patients and the control group. The changes in eosinophils and basophils, which are closely related to allergic reactions, were within the normal range throughout the irradiation process. The coagulation function (prothrombin time, activated partial thromboplastin time and thrombin time) of the patients was within the normal range. After irradiation treatment, the ASIA sensory and motor scores of all patients were improved. This treatment method overcomes the shortcoming that light cannot be directly applied to deeper SCI sites in previous percutaneous or intravascular irradiation treatments. Within the appropriate irradiation parameter range, the photobiomodulation treatment method directly used at the spinal nerve injury site will not produce adverse reactions. This method is safe, feasible and will not add additional trauma to the patients.

Claims

1. A semiconductor laser therapeutic apparatus for spinal nerve injury, comprising at least a semiconductor laser, a power supply module, a microprocessor control device, and a control touch screen. The microprocessor control device is respectively connected to the semiconductor laser and the control touch screen, and the semiconductor laser is connected to a jumper optical fiber. The power supply module is respectively connected to the control touch screen, the microprocessor control device, and the semiconductor laser, and is characterized in that: The semiconductor laser described above includes a power drive feedback system (C-1). The power drive feedback system (C-1) is respectively connected to the upper semiconductor chip (C-3) and the lower semiconductor chip (C-5). The laser generated by the upper semiconductor chip (C-3) and the lower semiconductor chip (C-5) is collimated by a double-layer collimating mirror (C-7) respectively in a real-time dynamic feedback manner. The laser is divided into two paths in the vertical and horizontal directions by an upper beam splitting module (C-9) and a lower beam splitting module (C-10). The laser in the vertical direction is respectively transmitted to an upper power sensor (C-11) and a lower power sensor (C-12), and then connected to the power drive feedback system (C-1) through an upper feedback circuit (C-13) and a lower feedback circuit (C-14) respectively. The laser in the horizontal direction passes through a mode selector (C-15) to filter out the outgoing light of high-order modes, is collimated and focused by a superlens (C-16), and is incident into a jumper optical fiber (H) through an optical fiber coupling connector (C-17), and finally the laser is output through the jumper optical fiber (H). The power drive feedback system (C-1) described above includes a first power drive module (C-21), a second power drive module (C-22) and a power feedback module (C-27). The upper semiconductor chip (C-3) is connected to the positive pole of the first power drive module (C-21), the upper heat sink (C-2) is connected to the negative pole of the first power drive module (C-21), the lower semiconductor chip (C-5) is connected to the positive pole of the second power drive module (C-22), and the lower heat sink (C-4) is connected to the negative pole of the second power drive module (C-22). The upper heat sink (C-2) and the lower heat sink (C-4) adopt a phase change heat dissipation structure.

2. The semiconductor laser therapeutic apparatus according to claim 1, characterized in that: The phase change heat dissipation structure of the upper heat sink (C-2) and the lower heat sink (C-4) includes a heat sink shell (C-33). A heat sink core (C-31) is sleeved inside the heat sink shell (C-33). A heat sink liquid absorption core (C-32) with a porous capillary structure is inlaid on the inner wall of the heat sink core (C-31). One end of the heat sink core (C-31) is an evaporation section, and the other end is a condensation section. When one end of the heat sink core (C-31) is heated, the working liquid of the heat sink liquid absorption core (C-32) evaporates and vaporizes. The vapor (C-34) flows to the other end under a small pressure difference and releases heat to condense into a liquid (C-35). The liquid (C-35) then flows back to the evaporation section along the porous capillary structure by the action of capillary suction.

3. The semiconductor laser therapeutic apparatus according to claim 1 or 2, characterized in that: The light intensity ratio of the upper beam splitting module (C-9) and the lower beam splitting module (C-10) in the vertical and horizontal directions is 5:

95.

4. The semiconductor laser therapeutic apparatus according to claim 3, characterized in that: The laser emitted by the upper semiconductor chip (C-3) and the lower semiconductor chip (C-5) is collimated by a double-layer collimating mirror (C-7). The divergence angles of the fast and slow axes of the semiconductor laser are less than 0.5°.

5. The semiconductor laser therapeutic apparatus according to claim 1, characterized in that: The microprocessing control device is also connected to an ID card recognition system, and the ID card recognition system includes an ID card reader (E-1).

6. The semiconductor laser therapeutic apparatus according to claim 1, characterized in that: The described microprocessing control device is also interconnected with a safety protection device, and the safety protection device is respectively connected to a semiconductor laser and a power supply module.

7. The semiconductor laser therapeutic apparatus according to claim 6, characterized in that: The described microprocessing controller device includes a main control board (B-1) and / or an industrial control computer (B-2), a first relay (B-3), and a second relay (B-4); the safety alarm system includes an alarm indicator light (D-1), and the identity card recognition system includes an identity card reader (E-1); the power supply module includes a metal self-locking push-button switch (F-1), a device power cord (F-2), and a switching power supply (F-3); the safety protection device includes a metal emergency stop push-button switch (G-1), an overcurrent protector (G-2), a semiconductor laser interlock device (G-3), a temperature sensor (G-4), a fan (G-6), and a filter (G-7); Among them, the device power connection line (F-2), the overcurrent protector (G-2), the filter (G-7), the metal emergency stop push-button switch (G-1), and the switching power supply (F-3) are connected in sequence. The switching power supply F-3 is respectively connected to the control touch screen A and the main control board B-1, and the main control board B-1 is connected to the identity card reader E-1; when the industrial control computer B-2 is selected for configuration, the switching power supply F-3 is respectively connected to the control touch screen A, the industrial control computer B-2, and the main control board B-1. The industrial control computer B-2 is respectively connected to the control touch screen A and the main control board B-1, and the industrial control computer B-2 is connected to the identity card reader E-1; On the one hand, the main control board (B-1) controls the temperature sensor (G-4), the alarm indicator light (D-1), the handle status indicator light (I-1), and the automatic identification probe (I-2) respectively through parallel connection; on the other hand, the main control board (B-1) also controls the first relay (B-4) and the second relay (B-3) respectively through two lines. The first relay (B-4) is connected to the fan (G-6); the metal self-locking push-button switch (F-1) is connected to the second relay (B-3), the laser power drive feedback system (C-1), the semiconductor laser, and the jumper optical fiber in sequence; the laser interlock device (G-3) is connected to the laser power drive feedback system (C-1).

8. The semiconductor laser therapeutic apparatus according to claim 1, wherein: The described real-time dynamic feedback method is realized through a power feedback module (C-27). One of the feedback control methods of this power feedback module (C-27) is as follows: When the semiconductor laser starts to work, make the output current of the upper semiconductor chip (C-3) the same as that of the lower semiconductor chip (C-5), so that the sum of the output power P1 of the upper semiconductor chip (C-3) and the output power P2 of the lower semiconductor chip (C-5) is equal to the set value P set ; where P1, P2, P set The maximum value is equal to the maximum power output by the upper semiconductor chip (C-3) or the lower semiconductor chip (C-5); Among them, the calculation methods for the output power P1 of the upper semiconductor chip (C-3) and the output power P2 of the lower semiconductor chip (C-5) are: P1 = k1 × PM1 (1) P2 = k2 × PM2 (2) k1 and k2 are the calibration coefficients of the upper power sensor (C-11) and the lower power sensor (C-12), which are obtained by calibrating with a standard light source with known power; During the operation of the semiconductor laser, the powers PM1 and PM2 of the upper power sensor (C-11) and the lower power sensor (C-12) are monitored every 5 - 10 s, and the output power P1 of the upper semiconductor chip (C-3) and the output power P2 of the lower semiconductor chip (C-5) are calculated according to formulas (1) and (2); If the output power P1 of the upper semiconductor chip (C-3) is less than P set / 2, or the output power P2 of the lower semiconductor chip (C-5) is less than P set / 2, increase the output current of the corresponding circuit drive module until the laser output power equals the set value P set ; if adjusting the current of the upper semiconductor chip (C-3) cannot reach P set / 2 or adjusting the current of the lower semiconductor chip (C-5) cannot reach P set / 2, then increase the current of the other path until P1 + P2 = P set ; if the set value P cannot be reached by adjusting the currents of both the upper semiconductor chip (C-3) and the lower semiconductor chip (C-5), set then it is determined that the entire semiconductor laser fails; If the output power P1 of the upper semiconductor chip (C-3) is greater than P set / 2, or the output power P2 of the lower semiconductor chip (C-5) is greater than P set / 2, reduce the output current of the corresponding circuit drive module until the laser output power equals the set value P set ; if adjusting the current of the upper semiconductor chip (C-3) cannot reach P set / 2, or adjusting the current of the lower semiconductor chip (C-5) cannot reach P set / 2, then determine that the upper semiconductor chip (C-3) or the lower semiconductor chip (C-5) fails, set the current of the failed circuit to zero, and at the same time increase the current of the other path until P2 = P set or P1 = P set ; if the set value P set cannot be reached by adjusting the current of the other path either, then determine that the semiconductor laser fails as a whole.

9. The semiconductor laser therapeutic apparatus according to claim 1, characterized in that: The described real-time dynamic feedback method is implemented through a power feedback module (C-27). Another feedback control method of the power feedback module (C-27) is as follows: When the semiconductor laser starts to operate, the output current of the upper semiconductor chip (C-3) is made the same as the output current of the lower semiconductor chip (C-5); the sum of the output power P1 of the upper semiconductor chip (C-3) and the output power P2 of the lower semiconductor chip (C-5) is made equal to the set value P set ; where P1, P2, P set The maximum value is equal to the maximum power output by the upper semiconductor chip (C-3) or the lower semiconductor chip (C-5); The calculation methods for the output power P1 of the upper semiconductor chip (C-3) and the output power P2 of the lower semiconductor chip (C-5) are as follows: P1 = k1 × PM1 (1) P2 = k2 × PM2 (2) k1 and k2 are the calibration coefficients of the upper power sensor (C-11) and the lower power sensor (C-12), which are obtained by calibration with a standard light source with known power; During the operation of the semiconductor laser, the powers PM1 and PM2 of the upper power sensor (C-11) and the lower power sensor (C-12) are monitored every 5 - 10 s, and the output power P1 of the upper semiconductor chip (C-3) and the output power P2 of the lower semiconductor chip (C-5) are calculated according to formulas (1) and (2); If P1 + P2 is less than the set value P set , increase the output current of the upper semiconductor chip (C-3) until the output power of the semiconductor laser is equal to the set value P set ; if the output power of the semiconductor laser cannot reach the set value P by adjusting the upper semiconductor chip (C-3) set , then the power of the upper semiconductor chip (C-3) decays, and increase the output current of the lower semiconductor chip (C-5) until the output power P1 + P2 of the semiconductor laser is equal to the set value P set ; if the set value P cannot be reached by adjusting the output circuits of both chips set , then it is determined that the semiconductor laser fails as a whole; If P1 + P2 is greater than the set value P set , reduce the output current of the upper semiconductor chip (C-3) until the output power of the semiconductor laser is equal to the set value P set ; if reducing the upper semiconductor chip (C-3) cannot make the output power of the laser reach the set value P set , then it is determined that the semiconductor laser as a whole fails.

10. The semiconductor laser therapeutic apparatus according to any one of claims 1-9, characterized in that: Spinal nerve injury includes disc herniation, spinal stenosis, spondylolisthesis or traumatic fracture diseases in each segment of the cervical, thoracic, lumbar and sacral vertebrae.

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