A high-precision double-sided synchronous etching system and method for quartz crystal

Abstract

The present invention relates to the technical field of double-sided etching of quartz crystals, and discloses a high-precision double-sided synchronous etching system and method for quartz crystals, the method comprising: obtaining etching information of a first etching surface and etching information of a second etching surface when etching the quartz crystal, obtaining a data difference value according to synchronous operation data of the etching gun and synchronous operation data of the etching gun in adjacent time periods, determining a data difference threshold according to historical synchronous operation data of each etching gun, screening the data difference value according to the data difference threshold, and obtaining a screened data abnormal value based on a Gaussian mixture model, and determining whether the synchronous operation of the two etching guns is in an abnormal state according to the data abnormal value. According to the synchronous operation data of the two etching guns and the internal stress of the quartz crystal, the etching gun in the abnormal state is adjusted. The present invention effectively improves the efficiency and accuracy of double-sided etching of quartz crystals.

Description

Technical Field

[0001] The invention relates to the technical field of double-sided etching of quartz crystals, and in particular to a high-precision double-sided synchronous etching system and method for quartz crystals. Background Art

[0002] In the manufacturing process of quartz crystal, etching process is an important step that directly affects the quality and performance of the final product. In order to ensure the accuracy and stability of quartz crystal, the etching process needs to be carried out simultaneously on both sides. Synchronous etching can ensure the uniformity of etching on both sides and reduce the internal stress problem caused by uneven etching.

[0003] However, in actual operation, the synchronization, stability and uniformity of etching depth of etching guns are easily affected by multiple factors, such as etching solution flow, temperature fluctuations and changes in the performance of etching guns, which may lead to inconsistent etching effects and thus affect the quality of quartz crystals. At the same time, in order to ensure the consistency of the working status of the two etching guns during double-sided synchronous etching, it is usually necessary to monitor and analyze the synchronous operation data of the etching guns in real time. Traditional synchronous control methods mostly rely on manual adjustment and simple feedback mechanisms, and lack comprehensive analysis of complex data changes.

[0004] Therefore, how to accurately acquire and process the operating data of the etching gun, detect potential anomalies in a timely manner, and make effective adjustments to them has become a key technical problem in the etching process. Summary of the invention

[0005] In view of this, the present invention proposes a high-precision double-sided synchronous etching system and method for quartz crystals, aiming to solve the problem that the existing synchronization control method relies on manual adjustment and simple feedback, lacks accurate analysis of complex data changes such as etching gun synchronization, stability and etching depth uniformity, resulting in the inability to effectively solve the problem of inconsistent etching effects.

[0006] The present invention provides a high-precision double-sided synchronous etching method for a quartz crystal, comprising:

[0007] Acquire etching information of a first etching surface and etching information of a second etching surface when etching the quartz crystal, wherein the etching information includes: synchronous operation data of two etching guns and synchronous operation data of the etching guns in adjacent time periods;

[0008] According to the synchronous operation data of the etching gun and the synchronous operation data of the etching gun in adjacent time periods, a data difference value is obtained, and the historical synchronous operation data of each etching gun is obtained. According to the historical synchronous operation data, a data difference threshold is determined, and the data difference value is filtered according to the data difference threshold, and a filtered data abnormal value is obtained based on a Gaussian mixture model, and according to the data abnormal value, it is determined whether the synchronous operation of the two etching guns is in an abnormal state;

[0009] The etching gun in abnormal state is adjusted according to the synchronous operation data of the two etching guns and the internal stress of the quartz crystal.

[0010] Furthermore, when determining the data difference threshold according to the historical synchronization operation data, it includes:

[0011] ;

[0012] Among them, Y represents the difference data threshold, Indicates the difference mean of historical normal synchronous operation data, represents the standard deviation of the historical normal synchronous operation data, and k represents the adjustment factor, where:

[0013] ;

[0014] ;

[0015] ;

[0016] Among them, Wt represents the data difference value of historical normal synchronous operation data, Represents the synchronous operation data at time t, represents the synchronous operation data at time t-1, and N represents the number of historical normal synchronous operation data.

[0017] Further, when the data difference value is screened according to the data difference threshold, it includes:

[0018] The relationship between the data difference value and the data difference threshold is used to eliminate small difference data:

[0019] When the data difference value is greater than the data difference threshold, the synchronous operation data corresponding to the data difference value is retained;

[0020] When the data difference value is less than or equal to the data difference threshold, the synchronous operation data corresponding to the data difference value is determined as small difference data and is eliminated.

[0021] Furthermore, when obtaining outliers of the filtered data based on the Gaussian mixture model, it includes:

[0022] Calculate the outlier value of each filtered data based on the Gaussian mixture model:

[0023] ;

[0024] Among them, p(x|Θ) represents the outlier value of data x, K is the number of Gaussian components, π k Expressed as the mixing coefficient of the kth component, It is expressed as the probability density of data x belonging to a certain Gaussian component.

[0025] Further, when determining whether the synchronous operation of the two etching guns is in an abnormal state according to the abnormal data value, it includes:

[0026] According to the relationship between the data abnormal value and the pre-configured preset data abnormal value, it is determined whether the synchronous operation of the two etching guns is in an abnormal state:

[0027] When the data abnormal value is less than or equal to the preset data abnormal value, it is determined that the synchronous operation of the two etching guns is not in an abnormal state;

[0028] When the data abnormal value is greater than the preset data abnormal value, it is determined that the synchronous operation of the two etching guns is in an abnormal state.

[0029] Furthermore, the synchronous operation data of the two etching guns specifically include: etching speed and etching depth of the two etching guns.

[0030] Further, when adjusting the abnormal etching gun according to the etching speed and etching depth of the two etching guns and the internal stress, it includes:

[0031] Determine whether the etching gun is in an abnormal state according to the relationship between the etching speed of the etching gun and the configured preset etching speed, and the etching depth of the etching gun and the configured preset etching depth:

[0032] When the etching speed is consistent with the preset etching speed, and the etching depth is consistent with the preset etching depth, it is determined that the etching gun is not in the abnormal state;

[0033] When the etching speed is inconsistent with the etching speed, and / or the etching depth is inconsistent with the preset etching depth, determining that the etching gun is in the abnormal state;

[0034] The speed ratio between the etching gun in the abnormal state and the etching gun in the normal state is obtained, the synchronization time of the etching gun in the abnormal state is determined according to the speed ratio, and the etching gun in the abnormal state is adjusted according to the synchronization time.

[0035] Further, when determining the synchronization time of the etching gun in an abnormal state according to the speed ratio, it includes:

[0036] ;

[0037] Wherein, △T is the synchronization time of the two etching guns, V normal is the etching speed of the etching gun in normal state, V abnormal is the etching speed of the etching gun in an abnormal state, and D is the preset etching depth.

[0038] Further, when determining the synchronization time of the etching gun in an abnormal state, it also includes:

[0039] The average etching depth between the etching gun in the abnormal state and the etching gun in the non-abnormal state is obtained, and the adjustment coefficient is determined according to the relationship between the average etching depth, the preset etching depth and the internal stress:

[0040] ;

[0041] Wherein, K is the adjustment coefficient, D abnormal is the etching depth of the etching gun in abnormal state, D normal is the etching depth of the etching gun in normal state, ΔD is the mean value of the etching depth, σ is the internal stress, and f is the weight coefficient;

[0042] The synchronization time is adjusted according to the adjustment coefficient.

[0043] Compared with the prior art, the beneficial effect of the present invention is that by accurately acquiring and analyzing the synchronous operation data and historical data of two etching guns, any abnormality in the etching process can be monitored in real time to ensure the accuracy and consistency of each etching operation. By analyzing the difference values ​​of the synchronous operation data and the data of adjacent time periods, the performance difference or operation inconsistency between the etching guns can be discovered in time, avoiding the problem of uneven etching caused by inconsistent working states of the etching guns. Based on the screening of data outliers by the Gaussian mixture model, noise data can be effectively eliminated, the accuracy and reliability of the monitoring results can be ensured, and a scientific basis can be provided for subsequent adjustments. In addition, by combining the internal stress information of the quartz crystal to accurately adjust the etching gun, the etching process can be further optimized according to the physical properties of the crystal. The stress state of the quartz crystal is one of the key factors affecting its final performance. Reasonable adjustment of the working state of the etching gun helps to reduce the internal stress of the crystal and improve its mechanical and electrical properties. Through this method, higher precision control can be achieved in the etching process, reducing the risk of uneven internal stress, thereby significantly improving the quality and consistency of the quartz crystal. Finally, traditional synchronous control methods mostly rely on manual monitoring and adjustment, and are easily affected by the operator's experience and judgment ability. This method not only improves the accuracy of synchronous control through real-time data analysis and intelligent algorithms, but the implementation of this high-precision double-sided synchronous etching method can not only improve the quality of quartz crystal processing, but also optimize production efficiency, reduce scrap rate, and achieve a more reliable and efficient production process.

[0044] On the other hand, the present application also provides a high-precision double-sided synchronous etching system for a quartz crystal, comprising:

[0045] A collection module is configured to obtain etching information of a first etching surface and etching information of a second etching surface when etching the quartz crystal, wherein the etching information includes: synchronous operation data of two etching guns and synchronous operation data of the etching guns in adjacent time periods;

[0046] An analysis module is electrically connected to the acquisition module, and the analysis module is configured to obtain a data difference value according to the synchronous operation data of the etching gun and the synchronous operation data of the etching gun in adjacent time periods; the analysis module is also configured to obtain the historical synchronous operation data of each etching gun, determine the data difference threshold according to the historical synchronous operation data, and filter the data difference value according to the data difference threshold; the analysis module is also configured to obtain the filtered data abnormal value based on the Gaussian mixture model, and determine whether the synchronous operation of the two etching guns is in an abnormal state according to the data abnormal value;

[0047] The central control module is electrically connected to the analysis module, and is configured to adjust the etching gun in an abnormal state according to the synchronous operation data of the two etching guns and the internal stress of the quartz crystal.

[0048] It can be understood that the high-precision double-sided simultaneous etching system and method for quartz crystal in the above-mentioned embodiments of the present invention have the same beneficial effects, which will not be described in detail. BRIEF DESCRIPTION OF THE DRAWINGS

[0049] Various other advantages and benefits will become apparent to those of ordinary skill in the art by reading the detailed description of the preferred embodiments below. The accompanying drawings are only for the purpose of illustrating the preferred embodiments and are not to be considered as limiting the present invention. Moreover, the same reference symbols are used throughout the accompanying drawings to represent the same components. In the accompanying drawings:

[0050] Figure 1 A flowchart of a high-precision double-sided synchronous etching method for a quartz crystal provided by an embodiment of the present invention;

[0051] Figure 2 A functional block diagram of a high-precision double-sided synchronous etching system for a quartz crystal provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0052] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present disclosure are shown in the accompanying drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the embodiments described herein. On the contrary, these embodiments are provided in order to enable a more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art. It should be noted that, in the absence of conflict, the embodiments of the present invention and the features described in the embodiments can be combined with each other. The present invention will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0053] like Figure 1 As shown, in some embodiments of the present application, this embodiment provides a high-precision double-sided synchronous etching method for a quartz crystal, comprising:

[0054] Step S100, obtaining etching information of a first etched surface and etching information of a second etched surface when etching the quartz crystal.

[0055] Specifically, the etching information includes: synchronous operation data of two etching guns and synchronous operation data of the etching guns in adjacent time periods.

[0056] Specifically, the synchronous operation data of the two etching guns include: etching speed and etching depth of the two etching guns.

[0057] It is understandable that by acquiring the etching information of the first etching surface and the second etching surface in real time, various parameters in the etching process can be fully monitored to avoid quality problems caused by large differences in the etching surfaces. In particular, the acquisition of synchronous operation data not only covers the working status of the current etching gun, but also involves the data of adjacent time periods, providing a comprehensive reference basis for subsequent data analysis. Secondly, the core of the etching information is the monitoring and analysis of the synchronous operation data of the two etching guns. The synchronous operation data includes the etching speed and etching depth of the etching gun, and these two key parameters directly affect the etching effect. The etching speed determines the erosion rate of the etching liquid on the quartz crystal, while the etching depth reflects the degree to which the crystal surface is etched. By synchronously acquiring these two data, the system can fully grasp the working conditions of each etching gun, ensure that the two etching guns are consistent during the etching process, and prevent the crystal quality from being unstable due to large differences. Finally, the synchronous operation data of adjacent time periods provides important historical data references. By comparing the working parameters of the etching guns in different time periods, it is possible to identify whether there are inconsistent operation phenomena, such as etching speed that is too fast or too slow, etching depth deviation, etc. Comparing these data helps to promptly detect potential anomalies in the etching process and provide a basis for subsequent adjustments.

[0058] Step S200, obtaining a data difference value according to the synchronous operation data of the etching gun and the synchronous operation data of the etching gun in adjacent time periods, obtaining the historical synchronous operation data of each etching gun, determining a data difference threshold according to the historical synchronous operation data, filtering the data difference value according to the data difference threshold, and obtaining a filtered data outlier value based on a Gaussian mixture model, and determining whether the synchronous operation of the two etching guns is in an abnormal state according to the data outlier value.

[0059] Specifically, determining the data difference threshold according to the historical synchronization operation data includes:

[0060] .

[0061] Among them, Y represents the difference data threshold, Indicates the difference mean of historical normal synchronous operation data, represents the standard deviation of the historical normal synchronous operation data, and k represents the adjustment factor, where:

[0062] .

[0063] .

[0064] .

[0065] Among them, Wt represents the data difference value of historical normal synchronous operation data, Represents the synchronous operation data at time t, represents the synchronous operation data at time t-1, and N represents the number of historical normal synchronous operation data.

[0066] Specifically, when the data difference value is screened according to the data difference threshold, it includes: based on the relationship between the data difference value and the data difference threshold, small difference data is eliminated: when the data difference value is greater than the data difference threshold, the synchronous operation data corresponding to the data difference value is retained. When the data difference value is less than or equal to the data difference threshold, the synchronous operation data corresponding to the data difference value is determined as small difference data and eliminated.

[0067] Specifically, when obtaining the outlier value of the filtered data based on the Gaussian mixture model, it includes: calculating the outlier value of each filtered data based on the Gaussian mixture model:

[0068] .

[0069] Among them, p(x|Θ) represents the outlier value of data x, K is the number of Gaussian components, π k Expressed as the mixing coefficient of the kth component, It is expressed as the probability density of data x belonging to a certain Gaussian component.

[0070] Specifically, when determining whether the synchronous operation of the two etching guns is in an abnormal state according to the data abnormal value, it includes: determining whether the synchronous operation of the two etching guns is in an abnormal state according to the relationship between the data abnormal value and the pre-configured preset data abnormal value: when the data abnormal value is less than or equal to the preset data abnormal value, it is determined that the synchronous operation of the two etching guns is not in an abnormal state. When the data abnormal value is greater than the preset data abnormal value, it is determined that the synchronous operation of the two etching guns is in an abnormal state.

[0071] It can be understood that the data difference value is calculated by obtaining the synchronous operation data and the data of the adjacent time periods. By obtaining the synchronous operation data of each etching gun at different time points, the etching speed and etching depth differences of the two etching guns can be understood. These difference values ​​provide basic data for subsequent analysis, which can help determine whether the two etching guns work in a consistent manner. Then, by analyzing the historical synchronous operation data, the data difference threshold is determined, and the difference value is screened using this threshold. This process can identify which data is the effective data that truly reflects the etching process and which data may be invalid noise. Secondly, when determining the data difference threshold, a reasonable threshold range can be obtained by calculating the difference mean and standard deviation of the historical normal synchronous operation data. Specifically, the difference mean of the historical normal synchronous operation data represents the working state of the etching gun under normal conditions, while the standard deviation reflects the possible fluctuations in the etching process. The introduction of the adjustment factor k further adjusts the data threshold, making the screening of the difference value more flexible and accurate. Through these statistical analyses, it can be ensured that the screened data can effectively reflect the true situation of the etching process. Next, screening the difference value according to the data difference threshold is a key step in determining whether the data is abnormal. By comparing each data difference value with the difference threshold, significant difference data can be identified. For data differences greater than the difference threshold, the corresponding synchronous operation data is retained for more in-depth analysis. For data less than or equal to the difference threshold, it is considered to be a small difference and is eliminated. This process effectively removes unnecessary noise data, improves the accuracy of subsequent outlier detection, and ensures that only significant differences that affect the etching process are focused on. Outlier identification based on Gaussian mixture model provides an accurate statistical method to determine the abnormality of data. By inputting the screened data into the Gaussian mixture model, the outlier value of each data point can be calculated by the model. The Gaussian mixture model can process data with multi-peak distribution, and accurately identify which data points are significantly different from normal data through the mixing coefficient and the probability density value of each data point, thereby marking them as outliers. This process ensures that the real abnormal state is identified under multiple possible working conditions. Finally, the comparison of the data outlier value with the preset threshold is a decisive step in determining whether the synchronization state of the etching gun is abnormal. By comparing the calculated data abnormal value with the preset abnormal value, it is possible to accurately determine whether there is a problem with the synchronous operation of the etching gun. If the data abnormal value exceeds the preset threshold, it means that the synchronous operation of the etching gun is abnormal, otherwise it is considered that the synchronous operation is normal.

[0072] It can be seen that through in-depth analysis of the synchronous operation data of the etching gun, the abnormal state in the etching process can be accurately identified. By obtaining the synchronous operation data of the etching gun at each moment and comparing it with the historical normal operation data, any deviation or abnormality in the operation can be effectively captured. The screening of data difference values ​​and the outlier analysis based on the Gaussian mixture model enable the key data points that affect the etching effect to be accurately distinguished from a large amount of data, and the noise data to be eliminated, thereby ensuring the accuracy and reliability of data analysis. Secondly, by setting the data difference threshold and combining the Gaussian mixture model, the synchronous state of the etching gun can be accurately controlled and monitored. The determination of the data difference threshold takes into account the mean and standard deviation of the historical operation data, making the threshold setting more targeted and flexible. Through this threshold screening mechanism, small differences can be efficiently eliminated, focusing on the differences that may really affect the etching quality, thereby improving the efficiency and effect of data screening. The introduction of the Gaussian mixture model further improves the accuracy of outlier identification, ensuring that abnormal states can be automatically and accurately detected in complex etching environments. Finally, by comparing the data outliers with the preset threshold, the synchronization status of the etching gun can be monitored and adjusted in real time. Through this intelligent judgment mechanism, when the outliers exceed the preset range, it can alarm and make adjustments in time, avoiding delays and errors caused by manual intervention. This not only improves the automation level of the etching process, but also effectively reduces the quality fluctuations caused by the synchronization errors of the etching gun, ensures the high-precision processing of quartz crystals, and ultimately improves the overall production efficiency and product quality.

[0073] Step S300: adjusting the etching gun in an abnormal state according to the synchronous operation data of the two etching guns and the internal stress of the quartz crystal.

[0074] Specifically, when adjusting the abnormal state etching gun according to the etching speed and etching depth of the two etching guns and the internal stress, it includes: determining whether the etching gun is in an abnormal state according to the relationship between the etching speed of the etching gun and the configured preset etching speed, and the etching depth of the etching gun and the configured preset etching depth: when the etching speed is consistent with the preset etching speed, and the etching depth is consistent with the preset etching depth, it is determined that the etching gun is not in the abnormal state. When the etching speed is inconsistent with the etching speed, and / or the etching depth is inconsistent with the preset etching depth, it is determined that the etching gun is in the abnormal state. Obtain the speed ratio between the etching gun in the abnormal state and the etching gun in the non-abnormal state, determine the synchronization time of the etching gun in the abnormal state according to the speed ratio, and adjust the etching gun in the abnormal state according to the synchronization time.

[0075] Specifically, according to the speed ratio, determining the synchronization time of the etching gun in an abnormal state includes:

[0076] .

[0077] Wherein, △T is the synchronization time of the two etching guns, V normal is the etching speed of the etching gun in normal state, V abnormal is the etching speed of the etching gun in an abnormal state, and D is the preset etching depth.

[0078] Specifically, when determining the synchronization time of the etching gun in the abnormal state, it also includes: obtaining the average etching depth between the etching gun in the abnormal state and the etching gun in the non-abnormal state, and determining the adjustment coefficient according to the relationship between the average etching depth, the preset etching depth and the internal stress:

[0079] .

[0080] Wherein, K is the adjustment coefficient, D abnormal is the etching depth of the etching gun in abnormal state, D normal is the etching depth of the etching gun in a normal state, ΔD is the average etching depth, σ is the internal stress, and f is the weight coefficient. The synchronization time is adjusted according to the adjustment coefficient.

[0081] It can be understood that the working state of the etching gun is judged by comparing the relationship between the etching speed and etching depth of each etching gun and the preset value. When the etching speed and etching depth are consistent with the preset value, it means that the etching gun is working normally and there is no abnormal state; when they are inconsistent, it is considered that the etching gun is in an abnormal state. This mechanism can effectively identify the equipment with problems in the work by real-time monitoring the working parameters of the etching gun. Next, after the etching gun in the abnormal state is judged, the adjustment demand of the synchronization time is further analyzed by calculating the speed ratio between the etching gun in the abnormal state and the etching gun in the normal state. Through the calculation of the speed ratio, the time difference required for the abnormal state etching gun and the normal etching gun in the synchronization process can be accurately obtained. This time difference (ΔT) is the key basis for adjusting the synchronization state of the etching gun, which is used to ensure the synchronization of the two etching guns, thereby avoiding uneven etching effects caused by differences in etching speeds. After determining the synchronization time, the adjustment coefficient is further calculated by analyzing the average etching depth between the etching gun in the abnormal state and the etching gun in the normal state, combined with the factor of internal stress. This adjustment coefficient is the result of a combination of multiple factors, including the difference in etching depth (ΔD), the depth difference between the abnormal etching gun and the normal etching gun, and the influence of internal stress. Through the comprehensive analysis of these parameters, a suitable adjustment coefficient can be obtained to accurately adjust the synchronization time and thus optimize the etching process. Based on the calculated adjustment coefficient, the synchronization time of the abnormal etching gun will be accurately adjusted. Through this adjustment, the speed and depth of the two etching guns can be more consistent when working synchronously, thereby ensuring the uniformity and accuracy of the etching process. This adjustment process ensures the efficient cooperation of the etching guns at work through refined calculations and adjustments, and avoids etching quality problems caused by poor synchronization.

[0082] It can be seen that by comprehensively analyzing the etching speed and etching depth of the two etching guns, as well as the difference from the preset value, it is possible to quickly and accurately determine whether a certain etching gun is in an abnormal state. This automated detection and analysis method avoids the inefficiency of manual detection and adjustment, and ensures the high precision and high stability of the etching process. Secondly, by calculating the speed ratio between the etching guns, the synchronization time between the abnormal state etching gun and the normal state etching gun can be accurately determined. The calculation of the synchronization time provides a scientific basis for the adjustment of the etching gun, thereby realizing the synchronous adjustment of the etching gun and keeping the two etching guns at the same working rhythm. This precise synchronous adjustment can effectively avoid the uneven etching depth caused by inconsistent etching speeds and ensure the consistency of the quartz crystal surface. In addition, the combined analysis of the mean value of the etching depth and the internal stress further optimizes the adjustment process of the etching gun. By comprehensively considering the etching depth and internal stress, the synchronization time can be dynamically adjusted according to the actual working conditions, fully considering the working characteristics of different etching guns and the material properties of the quartz crystal. This adjustment mechanism based on physical factors makes the etching process more in line with actual needs and improves the stability of the etching effect. Furthermore, by optimizing the synchronization time according to the adjustment coefficient and fine-tuning it on the basis of the synchronization time, the refined management of the etching process is guaranteed. The introduction of the adjustment coefficient provides higher adaptability and flexibility for the etching process, and can flexibly adjust the etching time under different conditions, so that the etching effect can reach the best state under various working conditions. Finally, since the working state of the etching gun can be automatically identified and adjusted, the need for manual intervention is reduced, and the workload of the operator is reduced. At the same time, precise synchronization adjustment avoids waste and errors caused by mismatch of the etching gun, thereby improving product consistency and yield.

[0083] In the above embodiment, by accurately acquiring and analyzing the synchronous operation data and historical data of the two etching guns, any abnormality in the etching process can be monitored in real time to ensure the accuracy and consistency of each etching operation. By analyzing the difference values ​​of the synchronous operation data and the data of adjacent time periods, the performance difference or operation inconsistency between the etching guns can be discovered in time, avoiding the problem of uneven etching caused by the inconsistent working state of the etching guns. Based on the screening of data outliers by the Gaussian mixture model, noise data can be effectively eliminated to ensure the accuracy and reliability of the monitoring results, and provide a scientific basis for subsequent adjustments. In addition, by combining the internal stress information of the quartz crystal to accurately adjust the etching gun, the etching process can be further optimized according to the physical properties of the crystal. The stress state of the quartz crystal is one of the key factors affecting its final performance. Reasonable adjustment of the working state of the etching gun helps to reduce the internal stress of the crystal and improve its mechanical and electrical properties. Through this method, higher precision control can be achieved in the etching process, reducing the risk of uneven internal stress, thereby significantly improving the quality and consistency of the quartz crystal. Finally, traditional synchronous control methods mostly rely on manual monitoring and adjustment, and are easily affected by the operator's experience and judgment ability. This method not only improves the accuracy of synchronous control through real-time data analysis and intelligent algorithms, but the implementation of this high-precision double-sided synchronous etching method can not only improve the quality of quartz crystal processing, but also optimize production efficiency, reduce scrap rate, and achieve a more reliable and efficient production process.

[0084] In another preferred embodiment based on the above embodiment, Figure 2 As shown, this embodiment provides a high-precision double-sided synchronous etching system for quartz crystals, including: a collection module, an analysis module and a central control module.

[0085] Specifically, the acquisition module is configured to obtain etching information of the first etching surface and etching information of the second etching surface when the quartz crystal is etched, wherein the etching information includes: synchronous operation data of the two etching guns and synchronous operation data of the etching guns in adjacent time periods. The analysis module is electrically connected to the acquisition module, and the analysis module is configured to obtain data difference values ​​according to the synchronous operation data of the etching guns and the synchronous operation data of the etching guns in adjacent time periods. The analysis module is also configured to obtain historical synchronous operation data of each etching gun, determine a data difference threshold according to the historical synchronous operation data, and filter the data difference value according to the data difference threshold. The analysis module is also configured to obtain a filtered data abnormal value based on a Gaussian mixture model, and determine whether the synchronous operation of the two etching guns is in an abnormal state according to the data abnormal value. The central control module is electrically connected to the analysis module, and the central control module is configured to adjust the abnormal state etching gun according to the synchronous operation data of the two etching guns and the internal stress of the quartz crystal.

[0086] It can be understood that the high-precision double-sided simultaneous etching system and method for quartz crystal in the above-mentioned embodiments of the present invention have the same beneficial effects, which will not be described in detail.

[0087] Those skilled in the art will appreciate that the embodiments of the present application may be provided as methods, systems or computer program products. Therefore, the present application may take the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware. Moreover, the present application may take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program codes.

[0088] The present application is described with reference to the flowcharts and / or block diagrams of the methods, devices (systems) and computer program products according to the embodiments of the present application. It should be understood that each process and / or box in the flowchart and / or block diagram, as well as the combination of processes and / or boxes in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor or other programmable data processing device to produce a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0089] These computer program instructions may also be stored in a computer-readable memory capable of directing a computer or other programmable data processing device to operate in a specific manner, so that the instructions stored in the computer-readable memory produce an article of manufacture comprising an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.

[0090] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operating steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing instructions for implementing the process in the computer or other programmable device. Figure 1 A process or multiple processes and / or boxes Figure 1 The steps for the functions specified in one or more boxes.

[0091] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, ordinary technicians in the relevant field should understand that the specific implementation methods of the present invention can still be modified or replaced by equivalents. Any modification or equivalent replacement that does not depart from the spirit and scope of the present invention should be covered within the scope of protection of the claims of the present invention.

Claims

1. A high-precision double-sided synchronous etching method for quartz crystal, characterized in that: include: Acquire etching information of a first etching surface and etching information of a second etching surface when etching a quartz crystal, wherein the etching information includes: synchronous operation data of two etching guns and synchronous operation data of the etching guns in adjacent time periods; According to the synchronous operation data of the etching gun and the synchronous operation data of the etching gun in adjacent time periods, a data difference value is obtained, and the historical synchronous operation data of each etching gun is obtained. According to the historical synchronous operation data, a data difference threshold is determined, and the data difference value is filtered according to the data difference threshold, and a filtered data abnormal value is obtained based on a Gaussian mixture model, and according to the data abnormal value, it is determined whether the synchronous operation of the two etching guns is in an abnormal state; The etching gun in abnormal state is adjusted according to the synchronous operation data of the two etching guns and the internal stress of the quartz crystal.

2. The high-precision double-sided simultaneous etching method for quartz crystal according to claim 1, characterized in that: Determining the data difference threshold according to the historical synchronization operation data includes: ; Among them, Y represents the difference data threshold, Indicates the difference mean of historical normal synchronous operation data, represents the standard deviation of the historical normal synchronous operation data, and k represents the adjustment factor, where: ; ； ； Among them, Wt represents the data difference value of historical normal synchronous operation data, Represents the synchronous operation data at time t, represents the synchronous operation data at time t-1, and N represents the number of historical normal synchronous operation data.

3. The high-precision double-sided simultaneous etching method for quartz crystal according to claim 2, characterized in that: When the data difference value is screened according to the data difference threshold, it includes: The relationship between the data difference value and the data difference threshold is used to eliminate small difference data: When the data difference value is greater than the data difference threshold, the synchronous operation data corresponding to the data difference value is retained; When the data difference value is less than or equal to the data difference threshold, the synchronous operation data corresponding to the data difference value is determined as small difference data and is eliminated.

4. The high-precision double-sided simultaneous etching method for quartz crystal according to claim 3, characterized in that: When obtaining outliers from filtered data based on a Gaussian mixture model, it includes: Calculate the outlier value of each filtered data based on the Gaussian mixture model: ； Among them, p(x|Θ) represents the outlier value of data x, K is the number of Gaussian components, π k Expressed as the mixing coefficient of the kth component, It is expressed as the probability density of data x belonging to a certain Gaussian component.

5. The high-precision double-sided simultaneous etching method for quartz crystal according to claim 1, characterized in that: Determining whether the synchronous operation of the two etching guns is in an abnormal state according to the abnormal data value includes: According to the relationship between the data abnormal value and the pre-configured preset data abnormal value, it is determined whether the synchronous operation of the two etching guns is in an abnormal state: When the data abnormal value is less than or equal to the preset data abnormal value, it is determined that the synchronous operation of the two etching guns is not in an abnormal state; When the data abnormal value is greater than the preset data abnormal value, it is determined that the synchronous operation of the two etching guns is in an abnormal state.

6. The high-precision double-sided simultaneous etching method for quartz crystal according to claim 1, characterized in that: The synchronous operation data of the two etching guns specifically include: etching speed and etching depth of the two etching guns.

7. The high-precision double-sided simultaneous etching method for quartz crystal according to claim 6, characterized in that: When adjusting the etching gun in an abnormal state according to the etching speed, etching depth and internal stress of the two etching guns, it includes: Determine whether the etching gun is in an abnormal state according to the relationship between the etching speed of the etching gun and the configured preset etching speed, and the etching depth of the etching gun and the configured preset etching depth: When the etching speed is consistent with the preset etching speed, and the etching depth is consistent with the preset etching depth, it is determined that the etching gun is not in the abnormal state; When the etching speed is inconsistent with the etching speed, and / or the etching depth is inconsistent with the preset etching depth, determining that the etching gun is in the abnormal state; The speed ratio between the etching gun in the abnormal state and the etching gun in the normal state is obtained, the synchronization time of the etching gun in the abnormal state is determined according to the speed ratio, and the etching gun in the abnormal state is adjusted according to the synchronization time.

8. The high-precision double-sided simultaneous etching method for quartz crystal according to claim 7, characterized in that: Determining the synchronization time of the etching gun in an abnormal state according to the speed ratio includes: ； Wherein, △T is the synchronization time of the two etching guns, V normal is the etching speed of the etching gun in normal state, V abnormal is the etching speed of the etching gun in an abnormal state, and D is the preset etching depth.

9. The high-precision double-sided simultaneous etching method for quartz crystal according to claim 8, characterized in that: When determining the synchronization time of the etching gun in an abnormal state, it also includes: The average etching depth between the etching gun in the abnormal state and the etching gun in the non-abnormal state is obtained, and the adjustment coefficient is determined according to the relationship between the average etching depth, the preset etching depth and the internal stress: ； Wherein, K is the adjustment coefficient, D abnormal is the etching depth of the etching gun in abnormal state, D normal is the etching depth of the etching gun in normal state, ΔD is the mean value of the etching depth, σ is the internal stress, and f is the weight coefficient; The synchronization time is adjusted according to the adjustment coefficient.

10. A high-precision double-sided synchronous etching system for quartz crystal, applicable to a high-precision double-sided synchronous etching method for quartz crystal as claimed in any one of claims 1 to 9, characterized in that: include: A collection module is configured to obtain etching information of a first etching surface and etching information of a second etching surface when etching the quartz crystal, wherein the etching information includes: synchronous operation data of two etching guns and synchronous operation data of the etching guns in adjacent time periods; An analysis module is electrically connected to the acquisition module, and the analysis module is configured to obtain a data difference value according to the synchronous operation data of the etching gun and the synchronous operation data of the etching gun in adjacent time periods; the analysis module is also configured to obtain the historical synchronous operation data of each etching gun, determine the data difference threshold according to the historical synchronous operation data, and filter the data difference value according to the data difference threshold; the analysis module is also configured to obtain the filtered data abnormal value based on the Gaussian mixture model, and determine whether the synchronous operation of the two etching guns is in an abnormal state according to the data abnormal value; The central control module is electrically connected to the analysis module, and is configured to adjust the etching gun in an abnormal state according to the synchronous operation data of the two etching guns and the internal stress of the quartz crystal.

Images