A method for preparing an iron-based superconducting thin film memristor by magnetron sputtering
The FeSe0.4Te0.6 film was prepared by magnetron sputtering method and the "sandwich" structure of ITO/FeSe0.4Te0.6/Ag was constructed, which solved the problems of high preparation cost and lack of memristor characteristics of existing iron-based superconducting films, achieved low-cost and high-quality iron-based superconducting film devices, and expanded its application in the fields of artificial intelligence and neural networks.
CN119776785APending Publication Date: 2025-04-08HEFEI QUAF SUPERCONDUCTING TECH CO LTD
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Patent Information
- Application Number
- CN202411881816.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-19
- Publication Date
- 2025-04-08
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Figure CN119776785A_ABST
Abstract
The invention discloses a method for preparing an iron-based superconducting thin film memristor by magnetron sputtering, which mainly comprises the following steps: 0.4 Te 0.6 The target was used as the raw material and FeSe was prepared by magnetron sputtering. 0.4 Te 0.6 The FeSe film was then 0.4 Te 0.6 The film was annealed in situ to obtain the phase-forming FeSe 0.4 Te 0.6 The Ag film was then prepared by magnetron sputtering, and then the FeSe 0.4 Te 0.6 / Ag film, and finally ITO / FeSe with c-axis oriented structure is obtained 0.4 Te 0.6 / Ag device film. This method is simple and can be used in large-scale batches / FeSe 0.4 Te 0.6 Superconducting films are more conducive to the preparation of superconducting thin film devices, are conducive to large-scale promotion and application, and have huge commercial value.
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