Device for quickly and uniformly depositing thin film on inner wall of slender pipe barrel piece through self-sputtering of hollow cathode and using method

Abstract

The invention discloses a device for quickly and uniformly depositing a film on the inner wall of a slender pipe barrel piece through self-sputtering of a hollow cathode. The method belongs to the field of surface treatment. The problems that effective discharge cannot be achieved in a long and thin pipe barrel piece, plasma energy is poor in controlled adjustment, and the uniformity of a deposited film is poor in a conventional method are solved. The device comprises a hollow cathode target material, a slender tube barrel piece, an anode rod, a hollow cathode power supply and a bias power supply. The opening direction of the hollow cathode is the axial direction, the anode and the hollow cathode can be coaxially arranged in the tube, the slender tube barrel piece is connected with the bias voltage cathode, the anode is connected with the anode rod, and plasmas generated by the anode and the anode rod can be controllably deposited on the inner wall of the slender tube barrel piece under the action of a bias voltage field between the anode and the slender tube barrel piece; and the adjustment of the plasma energy is effectively realized. And meanwhile, the slender pipe barrel part is pulled to move, so that effective contact between a discharge area and different positions of the inner wall of the slender pipe barrel part can be realized, and uniform and effective deposition of a coating at all positions in the slender pipe barrel part is realized.

Description

Technical Field

[0001] The invention belongs to the field of surface treatment, and in particular relates to a device for rapidly and evenly depositing a thin film on the inner wall of a slender tube by self-sputtering of a hollow cathode and a use method thereof. Background Art

[0002] Magnetron sputtering technology is widely used in surface strengthening fields such as medical, petrochemical, power engineering and marine engineering due to its low deposition temperature and good film quality. For example, in the medical field, the preparation of DLC film on the surface of artificial joints can adjust its hydrophilicity and reduce the friction coefficient, greatly improving the service life of the material; the preparation of TiN film on the surface of the material can not only improve the wear resistance of the material, but also obtain various colors by adjusting the composition of the film, improving the aesthetics of the workpiece; the preparation of TiN, TiAlN and other film layers on the surface of the tool can increase the hardness of the tool while increasing its wear resistance, extending the service life and improving the performance of the tool.

[0003] In the above applications, the film layer is mainly prepared on the outer surface of the material. This does not mean that the demand for the film layer on the inner surface of the material is low. On the contrary, in practical applications, the film has broad application prospects on the inner surface of the material, especially the inner surface of the tube. For example, in the chemical industry, a large number of pipelines are used to transport high-temperature corrosive chemical media. Compared with the outer surface, the inner surface of the pipeline becomes the first location for the failure of the tube material. Preparing a high-temperature and corrosion-resistant film layer on its inner surface will greatly increase its service life. However, due to the limited space inside the tube and the large aspect ratio, the research on inner wall protection has progressed slowly. The current methods for protecting the inner wall of the tube material are mainly to add a liner or to prepare a coating by electroplating. The former will form a weak point in the welded joint, while the latter will have a poor film quality and cause greater environmental pollution.

[0004] PVD technology has the advantages of being environmentally friendly and having few restrictions on the types of coatings that can be plated. However, in conventional PVD technology, arc ion plating or magnetron sputtering requires a built-in magnetic field and water-cooling structure, and the volume and size of the target are limited. For slender tubes, especially those with a large aspect ratio and a small diameter, it is impossible to build the target in while retaining a large target-substrate distance, which can easily cause sparks and make discharge extremely difficult. Also due to the limited space inside the tube, the arc ion plating or magnetron sputtering target material is very small after being built in, and the anode cannot be built in. The only way is to use a two-pole discharge method in which the target is connected to the positive electrode and the slender tube is connected to the positive electrode of the power supply, which limits the effective regulation of the plasma energy. Therefore, the built-in problem of the plasma source is a key issue that restricts the preparation of protective coatings on the inner walls of slender tube materials and needs to be solved urgently. Summary of the invention

[0005] The purpose of the present invention is to solve the problems that conventional deposition methods are limited by the size of slender tube parts, cannot effectively discharge in the slender tube parts, have poor control and regulation of plasma energy, and have poor uniformity of deposited films, and to provide a device and a method for using a hollow cathode self-sputtering to quickly and uniformly deposit a film on the inner wall of a slender tube part.

[0006] A device for rapidly and uniformly depositing a thin film on the inner wall of a slender tube by hollow cathode self-sputtering, comprising a hollow cathode target, a slender tube, an anode rod, a hollow cathode power supply and a bias power supply;

[0007] One end of the air inlet is connected to the interior of the hollow cathode target, one end of the hollow cathode target is connected to the negative output end of the hollow cathode power supply, the positive output end of the hollow cathode power supply is connected to one end of the anode rod and grounded; the slender tube is connected to the negative output end of the bias power supply, the positive output end of the bias power supply is connected to the anode rod and grounded;

[0008] The other end of the hollow cathode target is sleeved on one end of the slender tube member, and the other end of the slender tube member is sleeved on the other end of the anode rod; the hollow cathode target, the slender tube member and the anode rod are coaxially arranged.

[0009] Furthermore, it also includes a first insulating bracket, a movable slide rail, a base and a second insulating bracket; the hollow cathode target is fixed to the base through the first insulating bracket; the anode rod is fixed to the base through the first insulating bracket; the slender tube is fixed to the movable slide rail through the second insulating bracket; the movable slide rail is arranged on the base; the movable slide rail can drive the slender tube to reciprocate at a uniform speed along the axial direction through the traction of a reciprocating motor.

[0010] Furthermore, the anode rod is made of graphite, tantalum, molybdenum or tungsten.

[0011] Furthermore, the hollow cathode target is tubular and is made of Cr, Ti, Ta, Cu, Ni, Zn, Nb, Sn, Al, Fe, Mg or Zr;

[0012] Alternatively, it may be a nickel-chromium alloy, a nickel-aluminum alloy, a nickel-iron alloy, a nickel-vanadium alloy, a titanium-aluminum alloy, a titanium-aluminum-silicon alloy, a gold-tin alloy, a gold-palladium alloy, a molybdenum-niobium alloy, a ruthenium-chromium alloy, a boron-iron alloy or a silicon-iron alloy.

[0013] Furthermore, the hollow cathode power supply and the bias power supply can both be a direct current power supply, a pulse power supply, a high voltage power supply, a radio frequency power supply, an intermediate frequency power supply or a high power pulse power supply.

[0014] The method for using the above-mentioned hollow cathode self-sputtering device for rapidly and uniformly depositing a thin film on the inner wall of a slender tube is implemented by the following steps:

[0015] 1. Self-glow cleaning of the inner wall of slender tubes:

[0016] The vacuum chamber is evacuated, and working gas is introduced into the vacuum chamber to maintain the vacuum chamber pressure at 0.1-50 Pa. The positive output end of the bias power supply is connected to the anode rod and grounded, and the negative output end is connected to the slender tube member. The voltage of the bias power supply is controlled to be -50--2000V, and the duty cycle is 5%-100%. The inner surface of the slender tube member is self-glowing cleaned by plasma generated by the hollow cathode discharge effect to obtain the slender tube member after self-glowing cleaning;

[0017] 2. Hollow cathode enhanced glow cleaning of the inner wall of slender tubes:

[0018] The vacuum chamber pressure is maintained at 0.1-50 Pa, the negative output end of the hollow cathode power supply is connected to the hollow cathode target, the positive output end is connected to the anode rod and grounded, the negative output end of the bias power supply is connected to the slender tube member, the positive output end is connected to the anode rod and grounded, the voltage of the hollow cathode power supply is 400-2000 V, the peak current is 0.1-100 A, the duty cycle is 0.1%-100%, the voltage of the bias power supply is -50--2000 V, the duty cycle is 5%-100%, and the hollow cathode enhanced glow cleaning is performed to obtain the slender tube member after the hollow cathode enhanced glow cleaning;

[0019] 3. Deposition on the inner wall of tube and barrel:

[0020] The negative output end of the hollow cathode power supply is connected to the hollow cathode target material, the positive output end is connected to the anode rod, and the negative output end of the bias power supply is connected to the slender tube member, and the positive output end is connected to the anode rod and grounded, the vacuum chamber pressure is maintained at 0.1-50 Pa, the voltage of the hollow cathode power supply is controlled to be 400-2000 V, the peak current is 0.1-100 A, the duty cycle is 0.1%-100%, the voltage of the bias power supply is -0.1-500 V, and the duty cycle is 5%-100%, and hollow cathode coating is performed to complete the uniform deposition of a thin film on the inner wall of the slender tube member, that is, the use method of the device is completed.

[0021] Furthermore, the working gas in step 1 is argon, helium, neon, krypton, xenon, radon, oxygen, nitrogen, hydrogen, methane, hydrogen sulfide, ammonia, Ar+O 2 、Ar+N 2 、Ar+H 2 , O 2 +N 2 , O 2 +CH 4 , Ar+He or Ar+Xe; when the working gas is a mixed gas, the two are mixed in any ratio.

[0022] Furthermore, the self-glow cleaning time in step 1 is 15 minutes to 800 minutes.

[0023] Furthermore, the time for the hollow cathode enhanced glow cleaning in step 2 is 15 min to 800 min.

[0024] Furthermore, the time for hollow cathode coating in step 3 is 10 min to 800 min.

[0025] Principles and beneficial effects of the present invention:

[0026] 1. The present invention successfully realizes plasma discharge and controlled uniform deposition of coating in the slender tube by built-in hollow cathode ion source, effectively solving the problem of difficult discharge in the tube and difficult regulation of plasma energy. The principle is that the hollow cathode technology is a method of realizing efficient ionization discharge by reciprocating oscillation of electrons between the cathode wall, and the discharge is mainly concentrated at the port of the hollow cathode, so a high-density and high-ionization rate plasma can be formed locally. At the same time, with the help of the strong etching effect of plasma on the port of the hollow cathode, effective sputtering of the hollow cathode port material can be achieved to complete the physical vapor deposition process. The hollow cathode has a simple structure, which can be either a hole on the wall or a tube, without other complex structures, which effectively solves the problem of difficult discharge caused by the built-in target material during the coating process of the inner wall of the slender tube material; because the opening direction of the hollow cathode is along the axial direction, and its anode can be coaxially placed in the tube, the plasma generated by the two can be controlled and deposited on the inner wall of the slender tube under the action of the bias electric field between the anode and the slender tube, effectively realizing the regulation of plasma energy. At the same time, by pulling and moving the slender tube, effective contact between the discharge area and different positions of the inner wall of the tube can be achieved, and uniform and effective deposition of the coating at all positions inside the slender tube can be achieved.

[0027] 2. The inner diameter of the slender tube in the present invention is less than 10mm. The structure of the traditional cylindrical magnetron or multi-arc target is complex and it is difficult to enter the small-sized slender tube. It is very difficult to achieve sputtering in a small-diameter tube by using a cylindrical target. The present invention places a simpler hollow cathode target in the slender tube; the moving slide rail can drive the slender tube to reciprocate at a uniform speed along the axial direction through the traction of the reciprocating motor to ensure uniform coating in the tube.

[0028] 3. The length of the slender tube in the present invention exceeds 200 mm. There are many problems to be overcome in the long-distance transportation of plasma in the slender tube by traditional magnetron sputtering, and the structure is complex. In the present invention, the opening direction of the hollow cathode is along the axial direction, and its anode can be coaxially placed in the tube with it. The slender tube is connected to the biased negative electrode, and the positive electrode is connected to the anode rod. The plasma generated by the two can be controllably deposited on the inner wall of the slender tube under the action of the biased electric field between the anode and the slender tube, effectively realizing the regulation of plasma energy. At the same time, by pulling and moving the slender tube, effective contact between the discharge area and different positions of the inner wall of the slender tube can be achieved, and uniform and effective deposition of coatings at all positions inside the slender tube can be achieved, meeting the problem of rapid, long-distance and uniform deposition of thin films on the inner wall of the slender tube.

[0029] The invention is suitable for rapidly and uniformly depositing a thin film on the inner wall of a slender tube by hollow cathode self-sputtering. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 It is a schematic diagram of a device for rapidly and uniformly depositing a thin film on the inner wall of a slender tube member by self-sputtering of a hollow cathode according to the present invention, wherein 1 represents a first insulating support, 2 represents a hollow cathode target, 3 represents a moving slide rail, 4 represents a slender tube member, 5 represents an anode rod, 6 represents a base, 7 represents a hollow cathode power supply, 8 represents a second insulating support, and 9 represents a bias power supply;

[0031] Figure 2 The discharge current and voltage waveform of the hollow cathode target power supply in the embodiment;

[0032] Figure 3 This is a cross-sectional electron microscope image of a thin film deposited by self-sputtering of a hollow cathode in an embodiment;

[0033] Figure 4 This is a surface electron microscope image of a thin film deposited by self-sputtering of a hollow cathode in an embodiment;

[0034] Figure 5 This is an indentation morphology of a thin film deposited by hollow cathode self-sputtering in an embodiment. DETAILED DESCRIPTION

[0035] Specific implementation method 1: Figure 1 As shown, in this embodiment, a device for rapidly and uniformly depositing a thin film on the inner wall of a slender tube by hollow cathode self-sputtering comprises a hollow cathode target 2, a slender tube 4, an anode rod 5, a hollow cathode power supply 7 and a bias power supply 9;

[0036] One end of the air inlet is connected to the interior of the hollow cathode target 2, one end of the hollow cathode target 2 is connected to the negative output end of the hollow cathode power supply 7, the positive output end of the hollow cathode power supply 7 is connected to one end of the anode rod 5 and grounded; the slender tube member 4 is connected to the negative output end of the bias power supply 9, the positive output end of the bias power supply 9 is connected to the anode rod 5 and grounded;

[0037] The other end of the hollow cathode target 2 is sleeved on one end of the slender tube 4, and the other end of the slender tube 4 is sleeved on the other end of the anode rod 5; the hollow cathode target 2, the slender tube 4 and the anode rod 5 are coaxially arranged.

[0038] Specific embodiment 2: This embodiment is different from the specific embodiment 1 in that it also includes a first insulating support 1, a moving slide rail 3, a base 6 and a second insulating support 8; the hollow cathode target 2 is fixed to the base 6 through the first insulating support 4; the anode rod 5 is fixed to the base 6 through the first insulating support 5; the slender tube member 4 is fixed to the moving slide rail 3 through the second insulating support 8; the moving slide rail 3 is arranged on the base 6; the moving slide rail 3 can drive the slender tube member 4 to reciprocate at a uniform speed along the axial direction through the traction of the reciprocating motor. The rest is the same as the specific embodiment 1.

[0039] Specific embodiment 3: This embodiment is different from the specific embodiment 1 in that the anode rod 5 is made of graphite, tantalum, molybdenum or tungsten. The rest is the same as the specific embodiment 1.

[0040] Specific embodiment 4: This embodiment is different from the specific embodiment 1 in that the hollow cathode target 2 is tubular and its material is Cr, Ti, Ta, Cu, Ni, Zn, Nb, Sn, Al, Fe, Mg or Zr;

[0041] Or it can be nickel-chromium alloy, nickel-aluminum alloy, nickel-iron alloy, nickel-vanadium alloy, titanium-aluminum alloy, titanium-aluminum-silicon alloy, gold-tin alloy, gold-palladium alloy, molybdenum-niobium alloy, ruthenium-chromium alloy, boron-iron alloy or silicon-iron alloy. Others are the same as the first embodiment.

[0042] Specific embodiment 5: This embodiment is different from specific embodiment 1 in that the hollow cathode power supply 7 and bias power supply 9 can be a DC power supply, a pulse power supply, a high voltage power supply, a radio frequency power supply, an intermediate frequency power supply or a high power pulse power supply. The rest is the same as specific embodiment 1.

[0043] In this embodiment, the hollow cathode power supply 7 is used for the discharge of the hollow cathode target, and the bias power supply 9 is used for pulling the plasma, thereby achieving thin film deposition.

[0044] Specific embodiment 6: This embodiment is a method for using a device for rapidly and uniformly depositing a thin film on the inner wall of a slender tube by self-sputtering of a hollow cathode. It is implemented by the following steps:

[0045] 1. Self-glow cleaning of the inner wall of slender tubes:

[0046] The vacuum chamber is evacuated, and working gas is introduced into the vacuum chamber to maintain the vacuum chamber pressure at 0.1-50 Pa. The positive output end of the bias power supply 9 is connected to the anode rod 5 and grounded, and the negative output end is connected to the slender tube member 4. The voltage of the bias power supply 9 is controlled to be -50--2000V, and the duty cycle is 5%-100%. The plasma generated by the hollow cathode discharge effect is used to self-glow clean the inner surface of the slender tube member 4 to obtain the slender tube member after self-glow cleaning;

[0047] 2. Hollow cathode enhanced glow cleaning of the inner wall of slender tubes:

[0048] The vacuum chamber pressure is maintained at 0.1-50 Pa, the negative output end of the hollow cathode power supply 7 is connected to the hollow cathode target 2, the positive output end is connected to the anode rod 5 and grounded, the negative output end of the bias power supply 9 is connected to the slender tube 4, the positive output end is connected to the anode rod 5 and grounded, the voltage of the hollow cathode power supply 7 is 400-2000 V, the peak current is 0.1-100 A, the duty cycle is 0.1%-100%, the voltage of the bias power supply is -50--2000 V, the duty cycle is 5%-100%, and the hollow cathode enhanced glow cleaning is performed to obtain the slender tube after the hollow cathode enhanced glow cleaning;

[0049] 3. Deposition on the inner wall of tube and barrel:

[0050] The negative output end of the hollow cathode power supply 7 is connected to the hollow cathode target material 2, and the positive output end is connected to the anode rod 5. At the same time, the negative output end of the bias power supply 9 is connected to the slender tube member 4, and the positive output end is connected to the anode rod 5 and grounded. The vacuum chamber pressure is maintained at 0.1-50Pa, and the voltage of the hollow cathode power supply 7 is controlled to be 400-2000V, the peak current is 0.1-100A, and the duty cycle is 0.1%-100%. The voltage of the bias power supply 9 is -0.1-500V, and the duty cycle is 5%-100%. Hollow cathode coating is carried out to complete the uniform deposition of a thin film on the inner wall of the slender tube member, and the method for using the device is completed.

[0051] Specific embodiment 7: This embodiment is different from specific embodiment 6 in that the working gas in step 1 is argon, helium, neon, krypton, xenon, radon, oxygen, nitrogen, hydrogen, methane, hydrogen sulfide, ammonia, Ar+O 2 、Ar+N 2 、Ar+H 2 , O 2 +N 2 , O 2 +CH 4, Ar+He or Ar+Xe; when the working gas is a mixed gas, the two are mixed in any ratio. Other steps and parameters are the same as those in the sixth embodiment.

[0052] Specific embodiment eight: This embodiment differs from specific embodiment six in that the time of the self-glow cleaning in step one is 15 minutes to 800 minutes. The other steps and parameters are the same as those in specific embodiment six.

[0053] Specific embodiment 9: This embodiment is different from specific embodiment 6 in that the time of hollow cathode enhanced glow cleaning in step 2 is 15 minutes to 800 minutes. Other steps and parameters are the same as those in specific embodiment 6.

[0054] Specific embodiment 10: This embodiment is different from specific embodiment 6 in that the time of hollow cathode coating in step 3 is 10 minutes to 800 minutes. Other steps and parameters are the same as those in specific embodiment 6.

[0055] The beneficial effects of the present invention are verified by the following examples:

[0056] Example:

[0057] A method for using a device for rapidly and uniformly depositing a thin film on the inner wall of a slender tube by self-sputtering of a hollow cathode is implemented by the following steps:

[0058] 1. Self-glow cleaning of the inner wall of slender tubes:

[0059] The vacuum chamber is evacuated, and working argon gas is introduced into the vacuum chamber to maintain the vacuum chamber pressure at 0.1-50 Pa. The positive output end of the bias power supply 9 is connected to the anode rod 5 and grounded, and the negative output end is connected to the slender tube member 4. The voltage of the bias power supply 9 is controlled to be -50-2000V, and the duty cycle is 5%-100%. The plasma generated by the hollow cathode discharge effect is used to self-glow clean the inner surface of the slender tube member 4 to obtain the slender tube member after self-glow cleaning;

[0060] 2. Hollow cathode enhanced glow cleaning of the inner wall of slender tubes:

[0061] The vacuum chamber pressure is maintained at 0.1-50 Pa, the negative output end of the hollow cathode power supply 7 is connected to the hollow cathode target 2, the positive output end is connected to the anode rod 5 and grounded, the negative output end of the bias power supply 9 is connected to the slender tube 4, the positive output end is connected to the anode rod 5 and grounded, the voltage of the hollow cathode power supply 7 is 400-2000 V, the peak current is 0.1-100 A, the duty cycle is 0.1%-100%, the voltage of the bias power supply is -50--2000 V, the duty cycle is 5%-100%, and the hollow cathode enhanced glow cleaning is performed to obtain the slender tube after the hollow cathode enhanced glow cleaning;

[0062] 3. Deposition on the inner wall of tube and barrel:

[0063] The negative output end of the hollow cathode power supply 7 is connected to the hollow cathode target 2, and the positive output end is connected to the anode rod 5. At the same time, the negative output end of the bias power supply 9 is connected to the slender tube member 4, and the positive output end is connected to the anode rod 5 and grounded. The vacuum chamber pressure is maintained at 0.1-50Pa, and the voltage of the hollow cathode power supply 7 is controlled to be 400-2000V, the peak current is 0.1-100A, and the duty cycle is 0.1%-100%. The voltage of the bias power supply 9 is -0.1-500V, and the duty cycle is 5%-100%. Hollow cathode coating is carried out to complete the uniform deposition of a thin film on the inner wall of the slender tube member, that is, the method for using the device is completed.

[0064] In this embodiment, the hollow cathode power supply 7 adopts a pulse power supply; the bias power supply 9 adopts a pulse power supply.

[0065] The slender tube member 4 described in step 1 of this embodiment is made of maraging steel with an inner diameter of 8 mm and a length of 150 mm.

[0066] In this embodiment, the anode rod 5 is a high temperature resistant metal Mo rod; the hollow cathode target material 2 is a Cr target;

[0067] This example successfully achieved plasma discharge and controlled coating deposition in a slender tube by using a built-in hollow cathode target, effectively solving the problem of difficult discharge in the tube and difficult to control plasma energy. With the strong etching effect of plasma on the hollow cathode port, effective sputtering of the hollow cathode port material can be achieved to complete the physical vapor deposition process.

[0068] Since the opening direction of the hollow cathode is along the axis, and the anode can be coaxially placed in the tube, the plasma generated by the two can be controllably deposited on the inner wall of the slender tube under the action of the bias electric field between the anode and the slender tube, effectively realizing the regulation of plasma energy. At the same time, by pulling and moving the slender tube, the discharge area can be effectively contacted with different positions of the inner wall of the tube, and the coating can be effectively deposited at all positions inside the slender tube.

[0069] Figure 2 3 is a discharge current and voltage waveform of the hollow cathode target power supply in the embodiment; the figure shows that during the film deposition process in this embodiment, the actual hollow cathode power supply pulse voltage is 900V, the pulse peak current is 25A, the corresponding frequency is 1000Hz, and the pulse width is 15μs.

[0070] Figure 3 This is a cross-sectional electron micrograph of the thin film deposited by hollow cathode self-sputtering in the embodiment; the cross-sectional electron microscopic results show that the film thickness is 80 nm, the film is relatively dense, and no obvious columnar crystals are observed.

[0071] Figure 4 It is a surface electron microscope image of the thin film deposited by hollow cathode self-sputtering in the embodiment; the film layer of the plated Cr film is uniform, and no obvious large particles are observed; this indicates that the device and method for quickly and uniformly depositing a thin film on the inner wall of a slender tube by hollow cathode self-sputtering proposed in this embodiment can deposit a thin film with better uniformity.

[0072] Figure 5 It is the indentation morphology of the hollow cathode self-sputtering deposited film in the embodiment; this test is one of the common methods for evaluating the bonding strength between the film layer and the substrate material. When measuring the bonding strength, the Rockwell hardness tester indenter is a 120° conical diamond indenter, and the loading load is set to 1470N (150kgf, holding load 10s. The indentation morphology is analyzed using an ultra-depth of field optical microscope VHX-1000E (Keyence, Japan). Compared with the VDI3198 standard atlas, the bonding strength is divided into 6 levels (HF1-HF6. The research results show that the bonding strength between the film layer and the substrate has reached the level of HF1-HF2. The indentation morphology is complete, the indentation is a complete circular indentation, the circular indentation edge is smooth and complete, and there are no radial cracks and large areas of demolding area.

[0073] In summary, the device and deposition method for depositing a thin film on the inner wall of a slender tube by self-sputtering of a hollow cathode in the present invention can solve the problem that the structure of a columnar magnetron target is complex and it is difficult to achieve uniform film coating in a slender tube. The hollow cathode target is tubular and can be inserted into the slender tube. The device is simple, solves the problem of plasma transport in the tube, and achieves uniform film coating in the slender tube. The film layer is dense and has good mechanical properties.

[0074] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Although the present invention has been described in detail with reference to the aforementioned embodiments, it is still possible for those skilled in the art to modify the technical solutions described in the aforementioned embodiments, or to make equivalent substitutions for some of the technical features therein. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A device for rapidly and uniformly depositing a thin film on the inner wall of a slender tube by self-sputtering of a hollow cathode, characterized in that It comprises a hollow cathode target (2), a slender tube (4), an anode rod (5), a hollow cathode power supply (7) and a bias power supply (9); One end of the air inlet is connected to the interior of the hollow cathode target (2), one end of the hollow cathode target (2) is connected to the negative output end of the hollow cathode power supply (7), the positive output end of the hollow cathode power supply (7) is connected to one end of the anode rod (5) and is grounded; the slender tube member (4) is connected to the negative output end of the bias power supply (9), the positive output end of the bias power supply (9) is connected to the anode rod (5) and is grounded; The other end of the hollow cathode target (2) is sleeved on one end of the slender tube member (4), and the other end of the slender tube member (4) is sleeved on the other end of the anode rod (5); the hollow cathode target (2), the slender tube member (4) and the anode rod (5) are coaxially arranged.

2. A device for rapidly and uniformly depositing a thin film on the inner wall of a slender tube by hollow cathode self-sputtering according to claim 1, characterized in that It also comprises a first insulating support (1), a moving slide rail (3), a base (6) and a second insulating support (8); the hollow cathode target (2) is fixed to the base (6) via the first insulating support (4); the anode rod (5) is fixed to the base (6) via the first insulating support (5); the slender tube member (4) is fixed to the moving slide rail (3) via the second insulating support (8); the moving slide rail (3) is arranged on the base (6); the moving slide rail (3) can drive the slender tube member (4) to reciprocate at a uniform speed along the axial direction through the traction of a reciprocating motor.

3. The device for rapidly and uniformly depositing a thin film on the inner wall of a slender tube by hollow cathode self-sputtering according to claim 1, characterized in that The anode rod (5) is made of graphite, tantalum, molybdenum or tungsten.

4. The device for rapidly and uniformly depositing a thin film on the inner wall of a slender tube by hollow cathode self-sputtering according to claim 1, characterized in that The hollow cathode target (2) is tubular and made of Cr, Ti, Ta, Cu, Ni, Zn, Nb, Sn, Al, Fe, Mg or Zr; Alternatively, it may be a nickel-chromium alloy, a nickel-aluminum alloy, a nickel-iron alloy, a nickel-vanadium alloy, a titanium-aluminum alloy, a titanium-aluminum-silicon alloy, a gold-tin alloy, a gold-palladium alloy, a molybdenum-niobium alloy, a ruthenium-chromium alloy, a boron-iron alloy or a silicon-iron alloy.

5. The device for rapidly and uniformly depositing a thin film on the inner wall of a slender tube by hollow cathode self-sputtering according to claim 1, characterized in that The hollow cathode power supply (7) and the bias power supply (9) can both be a direct current power supply, a pulse power supply, a high voltage power supply, a radio frequency power supply, an intermediate frequency power supply or a high power pulse power supply.

6. A method for using the hollow cathode self-sputtering device for rapidly and uniformly depositing a thin film on the inner wall of a slender tube as claimed in claim 1, characterized in that: It is implemented as follows:

1. Self-glow cleaning of the inner wall of slender tubes: The vacuum chamber is evacuated, and working gas is introduced into the vacuum chamber to maintain the vacuum chamber pressure at 0.1-50 Pa. The positive output end of the bias power supply (9) is connected to the anode rod (5) and grounded, and the negative output end is connected to the slender tube member (4). The voltage of the bias power supply (9) is controlled to be -50-2000V, and the duty cycle is 5%-100%. The plasma generated by the hollow cathode discharge effect is used to self-glow clean the inner surface of the slender tube member (4), thereby obtaining the slender tube member after self-glow cleaning; 2. Hollow cathode enhanced glow cleaning of the inner wall of slender tubes: The vacuum chamber pressure is maintained at 0.1-50 Pa, the negative output end of the hollow cathode power supply (7) is connected to the hollow cathode target (2), the positive output end is connected to the anode rod (5) and grounded, the negative output end of the bias power supply (9) is connected to the slender tube member (4), the positive output end is connected to the anode rod (5) and grounded, the voltage of the hollow cathode power supply (7) is 400-2000 V, the peak current is 0.1-100 A, the duty cycle is 0.1%-100%, the voltage of the bias power supply is -50--2000 V, the duty cycle is 5%-100%, and the hollow cathode enhanced glow cleaning is performed to obtain the slender tube member after the hollow cathode enhanced glow cleaning; 3. Deposition on the inner wall of tube and barrel: The negative output end of the hollow cathode power supply (7) is connected to the hollow cathode target (2), and the positive output end is connected to the anode rod (5). At the same time, the negative output end of the bias power supply (9) is connected to the slender tube member (4), and the positive output end is connected to the anode rod (5) and grounded. The vacuum chamber pressure is maintained at 0.1-50 Pa. The voltage of the hollow cathode power supply (7) is controlled to be 400-2000 V, the peak current is 0.1-100 A, and the duty cycle is 0.1%-100%. The voltage of the bias power supply (9) is -0.1-500 V, and the duty cycle is 5%-100%. Hollow cathode coating is performed to complete the uniform deposition of a thin film on the inner wall of the slender tube member. This completes the method for using the device.

7. A method for using the hollow cathode self-sputtering device for rapidly and uniformly depositing a thin film on the inner wall of a slender tube according to claim 6, characterized in that The working gas described in step 1 is argon, helium, neon, krypton, xenon, radon, oxygen, nitrogen, hydrogen, methane, hydrogen sulfide, ammonia, Ar+O2, Ar+N2, Ar+H2, O2+N2, O2+CH4, Ar+He or Ar+Xe; when the working gas is a mixed gas, the two are mixed in any ratio.

8. The method for using the hollow cathode self-sputtering device for rapidly and uniformly depositing a thin film on the inner wall of a slender tube according to claim 6, characterized in that The time of the self-glow cleaning in step 1 is 15 minutes to 800 minutes.

9. A method for using the hollow cathode self-sputtering device for rapidly and uniformly depositing a thin film on the inner wall of a slender tube according to claim 6, characterized in that The time for the hollow cathode enhanced glow cleaning in step 2 is 15 minutes to 800 minutes.

10. A method for using the hollow cathode self-sputtering device for rapidly and uniformly depositing a thin film on the inner wall of a slender tube according to claim 6, characterized in that The time for hollow cathode coating in step 3 is 10 min to 800 min.

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