GaN HEMT nondestructive testing circuit and method based on acoustic emission technology

Abstract

The invention relates to the technical field of electronic device detection, in particular to a GaN HEMT nondestructive detection circuit and method based on the acoustic emission technology, the GaN HEMT nondestructive detection circuit is used for detecting a GaN transistor, and the GaN HEMT nondestructive detection circuit comprises a main test circuit, a direct current power supply, a signal generator and a signal acquisition circuit. According to the invention, transistor parameters are obtained through a principle of detecting stress waves when the GaN HEMT transistor is turned on and off, and whether the GaN HEMT transistor is qualified or not is determined through a data comparison mode, so that the state of a power electronic device can be observed in real time, and the fault problem of the device can be found in time.

Description

Technical Field

[0001] The present invention relates to the technical field of electronic device detection, and in particular to a GaN HEMT nondestructive detection circuit and method based on acoustic emission technology. Background Art

[0002] The performance of the device will directly affect the working efficiency of the entire power electronic equipment and even the entire system, so effective fault diagnosis of power electronic devices is crucial. Real-time, non-destructive online monitoring is conducive to observing the status of power electronic devices and timely discovering device faults, thereby minimizing the adverse effects of damaged devices on the entire power electronic equipment. GaN HEMT devices (gallium nitride high electron mobility transistors) are now widely used in power electronic equipment, and the detection method of mechanical stress waves for GaN HEMT devices is a device status detection method different from the traditional detection methods based on electrical parameters, thermal parameters, etc., and is a supplement and auxiliary to the traditional status detection method.

[0003] Traditional device status detection methods based on electrical parameters, thermal parameters and other detection methods, on the one hand, require complex peripheral circuit support for detecting the electrical and thermal parameters of the device, which may lead to a decrease in system stability, increase the system failure rate, and have limited device status detection accuracy; on the other hand, the control algorithm is complex, and the detection of electrical and thermal parameters requires precise and complex control algorithms to ensure the accuracy and stability of the detection data.

[0004] Therefore, it is necessary to propose a new detection method for GaN HEMT devices to solve the above problems. Summary of the invention

[0005] The present invention aims to solve the technical problems of low stability and complex control in the existing device state detection method.

[0006] In order to solve the above technical problems, in a first aspect, the present invention provides a GaN HEMT nondestructive testing circuit based on acoustic emission technology, wherein the GaN HEMT nondestructive testing circuit is used to detect GaN transistors, and the GaN HEMT nondestructive testing circuit includes a main test circuit, a DC power supply, a signal generator, and a signal acquisition circuit, wherein:

[0007] The positive terminal of the DC power supply is connected to the second terminal of the main test circuit, and the negative terminal of the DC power supply is connected to the first terminal of the main test circuit;

[0008] The signal generator is connected to the gate of the GaN transistor;

[0009] The signal acquisition circuit is used to respectively acquire the acoustic emission signals when the GaN transistor is in an on and off working state.

[0010] Furthermore, the main test circuit includes a first capacitor C1, a first resistor R1, a second resistor R2 and a first diode D1, the first end of the first capacitor C1 is connected to the source of the GaN transistor, the second end of the first capacitor C1 is connected to the first end of the second resistor R2, the first end of the first resistor R1 is connected to the first end of the first capacitor C1, the second end of the first resistor R1 is connected to the second end of the first capacitor C1, the second end of the second resistor R2 is connected to the drain of the GaN transistor, the positive end of the first diode D1 is connected to the second end of the second resistor R2, and the negative end of the first diode D1 is connected to the first end of the second resistor R2.

[0011] Furthermore, the signal acquisition circuit includes a piezoelectric sensor, an amplifier, an acoustic emitter and a signal processing terminal which are connected in sequence, and the piezoelectric sensor is bonded and fixed to the GaN transistor.

[0012] Furthermore, the piezoelectric sensor and the GaN transistor are bonded and fixed with a coupling agent as a medium.

[0013] In a second aspect, the present invention further provides a GaN HEMT nondestructive testing method based on acoustic emission technology, wherein the GaN HEMT nondestructive testing method is implemented based on the GaN HEMT nondestructive testing circuit based on acoustic emission technology as described above, and the GaN HEMT nondestructive testing method comprises the following steps:

[0014] Turn on the DC power supply to power the main test circuit;

[0015] Based on the main test circuit, a voltage is provided to the drain of the GaN transistor to be tested, and a signal generator provides a voltage signal to the gate of the GaN transistor;

[0016] Acquire a vibration signal generated by the vibration of the GaN transistor through a piezoelectric sensor and convert it into an electrical signal;

[0017] Amplifying the electrical signal through an amplifier to obtain an amplified signal;

[0018] Extracting features of the amplified signal by an acoustic emission instrument to obtain key characteristic parameters of the GaN transistor;

[0019] The signal processing terminal compares the preset comparison data with the key characteristic parameters to obtain the detection result of the GaN transistor.

[0020] The beneficial effect achieved by the present invention is that a GaN HEMT nondestructive testing circuit and method based on acoustic emission technology is proposed. The present invention obtains transistor parameters by detecting the stress wave principle when the GaN HEMT tube is turned on and off, and determines whether the GaN HEMT transistor is qualified by comparing data. The whole process can be detected online based on the implementation mode of the processing terminal, which is conducive to real-time observation of the state of the power electronic device and timely discovery of the fault problem of the device, thereby minimizing the adverse effects of the damaged device on the entire power electronic device. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 A schematic diagram of the overall structure of a GaN HEMT nondestructive testing circuit based on acoustic emission technology provided by an embodiment of the present invention;

[0022] Figure 2 It is a schematic diagram of the main test circuit structure provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0023] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0024] The invention provides a GaN HEMT nondestructive testing circuit based on acoustic emission technology, the GaN HEMT nondestructive testing circuit is used to detect GaN transistors, the GaN HEMT nondestructive testing circuit includes a main test circuit, a DC power supply, a signal generator and a signal acquisition circuit, please refer to Figure 1 and Figure 2 , Figure 1 The overall structural diagram of the GaN HEMT nondestructive testing circuit based on acoustic emission technology provided by an embodiment of the present invention is as follows: Figure 2 : is a schematic diagram of the main test circuit structure provided by an embodiment of the present invention, wherein:

[0025] The positive terminal of the DC power supply is connected to the second terminal of the main test circuit, and the negative terminal of the DC power supply is connected to the first terminal of the main test circuit;

[0026] The signal generator is connected to the gate of the GaN transistor;

[0027] The signal acquisition circuit is used to respectively acquire the acoustic emission signals when the GaN transistor is in an on and off working state.

[0028] Specifically, the main test circuit includes a first capacitor C1, a first resistor R1, a second resistor R2 and a first diode D1, the first end of the first capacitor C1 is connected to the source of the GaN transistor, the second end of the first capacitor C1 is connected to the first end of the second resistor R2, the first end of the first resistor R1 is connected to the first end of the first capacitor C1, the second end of the first resistor R1 is connected to the second end of the first capacitor C1, the second end of the second resistor R2 is connected to the drain of the GaN transistor, the positive end of the first diode D1 is connected to the second end of the second resistor R2, and the negative end of the first diode D1 is connected to the first end of the second resistor R2;

[0029] It can be understood that the GaN HEMT nondestructive testing circuit based on acoustic emission technology provided in the embodiment of the present invention collects acoustic emission signals by using the GaN transistor in the on and off working states, wherein a drain-source voltage Vds>0 is applied to the GaN transistor by the main test circuit, and the gate-source voltage is controlled by the signal generator to be greater than zero or equal to zero to provide an alternating voltage signal, thereby controlling the on and off of the GaN transistor.

[0030] Furthermore, the signal acquisition circuit includes a piezoelectric sensor, an amplifier, an acoustic emitter and a signal processing terminal which are connected in sequence, and the piezoelectric sensor is bonded and fixed to the GaN transistor.

[0031] The piezoelectric sensor and the GaN transistor are bonded and fixed with a coupling agent as a medium. Through the bonding of the sensor, richer and more obvious vibration wave signals can be collected. During the implementation process, the piezoelectric sensor receives the vibration signal emitted by the GaN transistor, and will be deformed by pressure and produce an elastic reaction, thereby converting the weak physical signal into a weak electrical signal.

[0032] The embodiment of the present invention further provides a GaN HEMT nondestructive testing method based on acoustic emission technology. The GaN HEMT nondestructive testing method is implemented based on the GaN HEMT nondestructive testing circuit based on acoustic emission technology as described above. The GaN HEMT nondestructive testing method includes the following steps:

[0033] Turn on the DC power supply to power the main test circuit;

[0034] Based on the main test circuit, a voltage is provided to the drain of the GaN transistor to be tested, and a signal generator provides a voltage signal to the gate of the GaN transistor;

[0035] Acquire a vibration signal generated by the vibration of the GaN transistor through a piezoelectric sensor and convert it into an electrical signal;

[0036] Amplifying the electrical signal through an amplifier to obtain an amplified signal;

[0037] Extracting features of the amplified signal by an acoustic emission instrument to obtain key characteristic parameters of the GaN transistor;

[0038] The signal processing terminal compares the preset comparison data with the key characteristic parameters to obtain the detection result of the GaN transistor.

[0039] The preset comparison data in the embodiment of the present invention may be detection data of a normal, qualified GaN transistor. When a computer or other device is used as a terminal, real-time detection of the GaN transistor may be achieved based on the computer capability of real-time processing.

[0040] In an embodiment of the present invention, taking into account the possibility of environmental noise and burst noise, in order to minimize the impact of random errors on transistor detection and analysis, under the premise of keeping the detection environment, device under test, detection system the same, and gate-source voltage and conduction time unchanged, the piezoelectric sensor should be kept pressed against the same position of the device in each detection to reduce errors caused by different positions.

[0041] The beneficial effect achieved by the present invention is that a GaN HEMT nondestructive testing circuit and method based on acoustic emission technology is proposed. The present invention obtains transistor parameters by detecting the stress wave principle when the GaN HEMT tube is turned on and off, and determines whether the GaN HEMT transistor is qualified by comparing data. The whole process can be detected online based on the implementation mode of the processing terminal, which is conducive to real-time observation of the state of the power electronic device and timely discovery of the fault problem of the device, thereby minimizing the adverse effects of the damaged device on the entire power electronic device.

[0042] It should be noted that, in this article, the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the sentence "comprises a ..." does not exclude the existence of other identical elements in the process, method, article or device including the element.

[0043] Through the description of the above implementation methods, those skilled in the art can clearly understand that the above-mentioned embodiment methods can be implemented by means of software plus a necessary general hardware platform, and of course by hardware, but in many cases the former is a better implementation method. Based on such an understanding, the technical solution of the present invention, or the part that contributes to the prior art, can be embodied in the form of a software product, which is stored in a storage medium (such as ROM / RAM, a magnetic disk, or an optical disk), and includes a number of instructions for enabling a terminal (which can be a mobile phone, a computer, a server, an air conditioner, or a network device, etc.) to execute the methods described in each embodiment of the present invention.

[0044] The embodiments of the present invention are described above in conjunction with the accompanying drawings. What is disclosed is only the preferred embodiment of the present invention. However, the present invention is not limited to the above-mentioned specific implementation manner. The above-mentioned specific implementation manner is only illustrative rather than restrictive. Under the enlightenment of the present invention, ordinary technicians in this field can also make many forms and equivalent changes without departing from the scope of protection of the purpose of the present invention and the claims, all of which are within the protection of the present invention.

Claims

1. A GaN HEMT nondestructive testing circuit based on acoustic emission technology, wherein the GaN HEMT nondestructive testing circuit is used to test GaN transistors, characterized in that: The GaN HEMT nondestructive testing circuit includes a main test circuit, a DC power supply, a signal generator and a signal acquisition circuit, wherein: The positive terminal of the DC power supply is connected to the second terminal of the main test circuit, and the negative terminal of the DC power supply is connected to the first terminal of the main test circuit; The signal generator is connected to the gate of the GaN transistor; The signal acquisition circuit is used to respectively acquire the acoustic emission signals when the GaN transistor is in an on and off working state.

2. The GaN HEMT nondestructive testing circuit based on acoustic emission technology according to claim 1, characterized in that: The main test circuit includes a first capacitor C1, a first resistor R1, a second resistor R2 and a first diode D1, the first end of the first capacitor C1 is connected to the source of the GaN transistor, the second end of the first capacitor C1 is connected to the first end of the second resistor R2, the first end of the first resistor R1 is connected to the first end of the first capacitor C1, the second end of the first resistor R1 is connected to the second end of the first capacitor C1, the second end of the second resistor R2 is connected to the drain of the GaN transistor, the positive end of the first diode D1 is connected to the second end of the second resistor R2, and the negative end of the first diode D1 is connected to the first end of the second resistor R2.

3. The GaN HEMT nondestructive testing circuit based on acoustic emission technology according to claim 1, characterized in that: The signal acquisition circuit includes a piezoelectric sensor, an amplifier, an acoustic emission instrument and a signal processing terminal which are connected in sequence. The piezoelectric sensor is bonded and fixed to the GaN transistor.

4. The GaN HEMT nondestructive testing circuit based on acoustic emission technology according to claim 3 is characterized in that: The piezoelectric sensor and the GaN transistor are bonded and fixed with each other using a coupling agent as a medium.

5. A nondestructive testing method for GaN HEMT based on acoustic emission technology, characterized in that: The GaN HEMT nondestructive testing method is implemented based on the GaN HEMT nondestructive testing circuit based on acoustic emission technology according to any one of claims 1 to 4, and the GaN HEMT nondestructive testing method comprises the following steps: Turn on the DC power supply to power the main test circuit; Based on the main test circuit, a voltage is provided to the drain of the GaN transistor to be tested, and a signal generator provides a voltage signal to the gate of the GaN transistor; Acquire a vibration signal generated by the vibration of the GaN transistor through a piezoelectric sensor and convert it into an electrical signal; Amplifying the electrical signal through an amplifier to obtain an amplified signal; Extracting features of the amplified signal by an acoustic emission instrument to obtain key characteristic parameters of the GaN transistor; The signal processing terminal compares the preset comparison data with the key characteristic parameters to obtain the detection result of the GaN transistor.

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