Photoetching machine and pollution control method thereof

Abstract

The invention belongs to the technical field of photoetching machines, and particularly relates to a photoetching machine and a photoetching machine pollution control method. The photoetching machine comprises a light source chamber, a connecting chamber, a main chamber, a silicon wafer stage chamber, a mask transmission chamber, a silicon wafer transmission chamber and a vacuum obtaining system, and the vacuum obtaining system comprises a backing pump set, a main pump set, a main chamber low-temperature pump and a silicon wafer stage chamber low-temperature pump. The main pump set comprises a light source chamber vacuum pump, a connecting chamber vacuum pump, a main chamber vacuum pump, a silicon wafer stage chamber vacuum pump, a mask transmission chamber vacuum pump and a silicon wafer transmission chamber vacuum pump which are respectively communicated with the backing pump set, a main chamber low-temperature pump is communicated with the main chamber, and a silicon wafer stage chamber low-temperature pump is communicated with the silicon wafer stage chamber. By using the photoetching machine in the technical scheme, not only can a good vacuum environment be ensured, but also gas pollutants can be controlled.

Description

Technical Field

[0001] The present invention belongs to the technical field of photolithography machines, and in particular relates to a photolithography machine and a method for controlling pollution of the photolithography machine. Background Art

[0002] The photolithography machine is an indispensable equipment in the chip manufacturing process. It is mainly used for microlithography on the chip surface to write the circuit pattern layer by layer. The photolithography machine usually needs to work in a vacuum environment. The main reason is to avoid interference caused by the presence of oxygen or other gases, reduce the impact of gas disturbance on the optical path, ensure that the precise circuit pattern can be accurately projected onto the chip surface, and ensure the accuracy of chip manufacturing. For extreme ultraviolet lithography machines, solid materials can dissolve and adsorb some gases in the atmospheric environment. When placed in a vacuum environment, they will release gases due to desorption and other processes. The hydrocarbons and water vapor released by the material will form carbon deposits or produce oxidation on the surface of the extreme ultraviolet reflector, thereby reducing the reflectivity and service life of the reflector. Therefore, it is necessary to strictly control the polluting gases such as hydrocarbons and water vapor inside the extreme ultraviolet lithography machine.

[0003] Therefore, it is urgent to propose a photolithography machine and a photolithography machine pollution control method to solve the above problems. Summary of the invention

[0004] The purpose of the present invention is to provide a photolithography machine with internal vacuum and capable of controlling gas pollutants. This purpose is achieved through the following technical solutions:

[0005] A first aspect of the present invention provides a photolithography machine, comprising a light source chamber, a connecting chamber, a main chamber, a wafer stage chamber, a mask transfer chamber, a wafer transfer chamber and a vacuum acquisition system, wherein the light source chamber is connected to the main chamber through the connecting chamber, the main chamber is connected to the wafer stage chamber, the mask transfer chamber is connected to the main chamber, and the wafer transfer chamber is connected to the wafer stage chamber;

[0006] The vacuum acquisition system includes a front pump group, a main pump group, a main chamber cryopump and a wafer stage chamber cryopump. The main pump group includes a light source chamber vacuum pump, a connecting chamber vacuum pump, a main chamber vacuum pump, a wafer stage chamber vacuum pump, a mask transfer chamber vacuum pump and a wafer transfer chamber vacuum pump. The light source chamber vacuum pump is connected to the light source chamber, the connecting chamber vacuum pump is connected to the connecting chamber, the main chamber vacuum pump is connected to the main chamber, and the wafer stage chamber vacuum pump is connected to the wafer stage chamber. The mask transfer chamber vacuum pump is connected to the mask transfer chamber, the silicon wafer transfer chamber vacuum pump is connected to the silicon wafer transfer chamber, the light source chamber vacuum pump, the connecting chamber vacuum pump, the main chamber vacuum pump, the silicon wafer stage chamber vacuum pump, the mask transfer chamber vacuum pump and the silicon wafer transfer chamber vacuum pump are connected to the fore-stage pump group through the fore-stage vacuum pipeline respectively, the main chamber cryopreservation pump is connected to the main chamber, and the silicon wafer stage chamber cryopreservation pump is connected to the silicon wafer stage chamber.

[0007] The photolithography machine in this technical solution uses the front-stage pump group to evacuate the front-stage vacuum pipeline to provide a good working environment for the main pump group, thereby improving the exhaust efficiency of the main pump group. The light source chamber, connecting chamber, main chamber, wafer stage chamber, mask transfer chamber and wafer transfer chamber are evacuated respectively by the light source chamber vacuum pump, connecting chamber vacuum pump, main chamber, wafer stage chamber, mask transfer chamber and wafer transfer chamber vacuum pump of the main pump group to ensure a good vacuum environment inside the photolithography machine, avoid interference caused by the presence of oxygen or other gases, reduce the impact of gas disturbance on the optical path, ensure that the precise circuit pattern can be accurately projected onto the photoresist coated on the surface of the silicon wafer, and ensure the accuracy of chip manufacturing. The main chamber cryopump and the wafer stage chamber cryopump are mainly used to condense and adsorb polluting gases such as hydrocarbons and water vapor in the main chamber and the wafer stage chamber to prevent the hydrocarbons and water vapor released by the materials from forming carbon deposition or oxidation on the surface of the extreme ultraviolet reflector, so as to ensure that the reflector has better reflectivity and longer service life.

[0008] In addition, the lithography machine of the present invention may also have the following additional technical features:

[0009] In some embodiments of the present invention, the fore-stage pump group includes a first fore-stage pump, the fore-stage vacuum pipeline includes a light source chamber vacuum pipeline and a connecting chamber vacuum pipeline, the light source chamber vacuum pump is connected to the first fore-stage pump through the light source chamber vacuum pipeline, and the connecting chamber vacuum pump is connected to the first fore-stage pump through the connecting chamber vacuum pipeline.

[0010] In some embodiments of the present invention, the light source chamber vacuum pipeline and the connecting chamber vacuum pipeline are respectively connected to a first gas mixing pipeline, a first regulating valve is provided on the first gas mixing pipeline, the first gas mixing pipeline is used to transport protective gas, the first regulating valve is used to adjust the flow rate of the protective gas, and the protective gas is used to adjust the volume fraction of hydrogen in the discharged process gas.

[0011] In some embodiments of the present invention, the fore-stage pump group includes a second fore-stage pump, the fore-stage vacuum pipeline includes a main chamber vacuum pipeline, a wafer stage chamber vacuum pipeline, a mask transfer chamber vacuum pipeline and a wafer transfer chamber vacuum pipeline, the main chamber vacuum pump is connected to the second fore-stage pump through the main chamber vacuum pipeline, the wafer stage chamber vacuum pump is connected to the second fore-stage pump through the wafer stage chamber vacuum pipeline, the mask transfer chamber vacuum pump is connected to the second fore-stage pump through the mask transfer chamber vacuum pipeline, and the wafer transfer chamber vacuum pump is connected to the second fore-stage pump through the wafer transfer chamber vacuum pipeline.

[0012] In some embodiments of the present invention, the main chamber vacuum pipeline, the silicon wafer stage chamber vacuum pipeline, the mask transfer chamber vacuum pipeline and the silicon wafer transfer chamber vacuum pipeline are respectively connected to a second gas mixing pipeline, a second regulating valve is provided on the second gas mixing pipeline, the second gas mixing pipeline is used to transport protective gas, the second regulating valve is used to adjust the flow rate of the protective gas, and the protective gas is used to adjust the volume fraction of hydrogen in the exhausted process gas.

[0013] In some embodiments of the present invention, a one-way valve is provided on the fore-stage vacuum pipeline, and the one-way valve is used to prevent the internal gas of the fore-stage pump group from flowing back.

[0014] In some embodiments of the present invention, the cavity wall of the main chamber and the cavity wall of the wafer stage chamber are respectively provided with outlets for communicating with the vacuum acquisition system, and the interior of the main chamber and the interior of the wafer stage chamber are respectively provided with heat shields facing the outlets, and the heat shields and the outlets are spaced apart.

[0015] In some embodiments of the present invention, a plurality of main chamber vacuum pumps are provided, and at least two side walls of the main chamber are connected to the main chamber vacuum pumps.

[0016] In some embodiments of the present invention, a plurality of the wafer stage chamber vacuum pumps are provided, and at least two side walls of the wafer stage chamber are connected to the wafer stage chamber vacuum pumps.

[0017] In a second aspect of the present invention, a photolithography machine pollution control method is proposed. The photolithography machine pollution control method is implemented by the photolithography machine in the above embodiment. The photolithography machine pollution control method includes:

[0018] Turn on the fore-stage pump group to make the fore-stage vacuum pipeline reach a preset first-level vacuum degree;

[0019] According to the fore-stage vacuum pipeline reaching a preset first-level vacuum degree, the light source chamber vacuum pump, the connecting chamber vacuum pump, the main chamber vacuum pump, the wafer stage chamber vacuum pump, the mask transfer chamber vacuum pump and the wafer transfer chamber vacuum pump are turned on, so that the light source chamber, the connecting chamber, the main chamber, the wafer stage chamber, the mask transfer chamber and the wafer transfer chamber reach a preset second-level vacuum degree, and the preset second-level vacuum degree is less than the preset first-level vacuum degree;

[0020] According to the light source chamber, the connecting chamber, the main chamber, the wafer stage chamber, the mask transfer chamber and the wafer transfer chamber all reaching the preset second-level vacuum degree, the main chamber cryopump and the wafer stage chamber cryopump are turned on to make the main chamber and the wafer stage chamber reach a preset third-level vacuum degree, and the preset third-level vacuum degree is less than the preset second-level vacuum degree. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Various other advantages and benefits will become apparent to those of ordinary skill in the art by reading the detailed description of the preferred embodiments below. The accompanying drawings are only for the purpose of illustrating the preferred embodiments and are not to be considered as limiting the present invention. Moreover, the same reference numerals are used throughout the accompanying drawings to represent the same components. In the accompanying drawings:

[0022] Figure 1 The principle diagram of a lithography machine according to an embodiment of the present invention is schematically shown.

[0023] The reference numerals in the accompanying drawings represent the following:

[0024] 10. Heat shield; 100. Light source chamber; 200. Connecting chamber; 300. Main chamber; 310. Mask stage; 320. Illumination optical chamber; 330. Projection optical chamber; 400. Wafer stage chamber; 410. Wafer stage; 500. Mask transfer chamber; 600. Wafer transfer chamber;

[0025] 710, first front stage pump; 711, light source chamber vacuum pipeline; 712, connecting chamber vacuum pipeline; 713, first gas mixing pipeline; 714, first regulating valve; 715, first main pipeline; 720, second front stage pump; 721, main chamber vacuum pipeline; 722, wafer stage chamber vacuum pipeline; 723, mask transfer chamber vacuum pipeline; 724, wafer transfer chamber vacuum pipeline; 725, second gas mixing pipeline; 726, second regulating valve; 727, second main pipeline; 730, one-way valve;

[0026] 810, light source chamber vacuum pump; 820, connecting chamber vacuum pump; 830, main chamber vacuum pump; 840, wafer stage chamber vacuum pump; 850, mask transfer chamber vacuum pump; 860, wafer transfer chamber vacuum pump; 870, main chamber cryogenic pump; 880, wafer stage chamber cryogenic pump. DETAILED DESCRIPTION

[0027] The exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present disclosure are shown in the accompanying drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the embodiments described herein. On the contrary, these embodiments are provided in order to enable a more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0028] It should be understood that the terms used herein are only for the purpose of describing specific example embodiments and are not intended to be limiting. Unless the context clearly indicates otherwise, the singular forms "one", "an" and "said" as used herein may also be meant to include plural forms. The terms "include", "comprise", "contain", and "have" are inclusive, and therefore specify the existence of stated features, steps, operations, elements and / or parts, but do not exclude the existence or addition of one or more other features, steps, operations, elements, parts, and / or combinations thereof. The method steps, processes, and operations described herein are not interpreted as necessarily requiring them to be performed in the specific order described or illustrated, unless the execution order is clearly indicated. It should also be understood that additional or alternative steps may be used.

[0029] Although the terms first, second, third, etc. can be used in the text to describe multiple elements, components, regions, layers and / or sections, these elements, components, regions, layers and / or sections should not be limited by these terms. These terms can only be used to distinguish an element, component, region, layer or section from another region, layer or section. Unless the context clearly indicates, terms such as "first", "second" and other numerical terms do not imply order or sequence when used in the text. Therefore, the first element, component, region, layer or section discussed below can be referred to as the second element, component, region, layer or section without departing from the teaching of the example embodiments.

[0030] For ease of description, spatial relative terms may be used herein to describe the relationship of one element or feature relative to another element or feature as shown in the figure, such as "inside", "outside", "inner side", "outer side", "below", "below", "above", "above", etc. Such spatial relative terms are intended to include different orientations of the device in use or operation in addition to the orientation depicted in the figure. For example, if the device in the figure is turned over, then the elements described as "below other elements or features" or "below other elements or features" will subsequently be oriented as "above other elements or features" or "above other elements or features". Therefore, the example term "below..." can include both above and below orientations.

[0031] Figure 1 Schematically shows a principle diagram of a photolithography machine according to an embodiment of the present invention. Figure 1The present invention proposes a photolithography machine, including a light source chamber 100, a connecting chamber 200, a main chamber 300, a wafer stage chamber 400, a mask transfer chamber 500, a wafer transfer chamber 600 and a vacuum acquisition system. The light source chamber 100 is connected to the main chamber 300 through the connecting chamber 200, the main chamber 300 is connected to the wafer stage chamber 400, the mask transfer chamber 500 is connected to the main chamber 300, and the wafer transfer chamber 600 is connected to the wafer stage chamber 400; the vacuum acquisition system includes a front pump group, a main pump group, a main chamber cryogenic pump 870 and a wafer stage chamber cryogenic pump 880, the main pump group includes a light source chamber vacuum pump 810, a connecting chamber vacuum pump 820, a main chamber vacuum pump 830, a wafer stage chamber vacuum pump 840, a mask transfer chamber vacuum pump 850 and a wafer transfer chamber vacuum pump 860. The vacuum pump 860 is connected to the light source chamber 100, the connecting chamber vacuum pump 820 is connected to the connecting chamber 200, the main chamber vacuum pump 830 is connected to the main chamber 300, the wafer stage chamber vacuum pump 840 is connected to the wafer stage chamber 400, the mask transfer chamber vacuum pump 850 is connected to the mask transfer chamber 500, and the wafer transfer chamber vacuum pump 860 is connected to the wafer transfer chamber 600. The light source chamber vacuum pump 810, the connecting chamber vacuum pump 820, the main chamber vacuum pump 830, the wafer stage chamber vacuum pump 840, the mask transfer chamber vacuum pump 850 and the wafer transfer chamber vacuum pump 860 are connected to the fore-stage vacuum pipeline and the fore-stage pump group respectively. The main chamber cryogenic pump 870 is connected to the main chamber 300, and the wafer stage chamber cryogenic pump 880 is connected to the wafer stage chamber 400.

[0032] The photolithography machine in this technical solution uses the front stage pump group to evacuate the front stage vacuum pipeline, providing a good working environment for the main pump group, thereby improving the exhaust efficiency of the main pump group. The light source chamber vacuum pump 810, the connection chamber vacuum pump 820, the main chamber vacuum pump 830, the wafer stage chamber vacuum pump 840, the mask transfer chamber vacuum pump 850 and the wafer transfer chamber vacuum pump 860 of the main pump group are used to evacuate the light source chamber 100, the connection chamber 200, the main chamber 300, the wafer stage chamber 400, the mask transfer chamber 500 and the wafer transfer chamber 600 respectively, ensuring that the inside of the photolithography machine has a good vacuum environment, avoiding interference caused by the presence of oxygen or other gases, reducing the influence of gas disturbance on the optical path, ensuring that the precise circuit pattern can be accurately projected onto the photoresist coated on the surface of the silicon wafer, and ensuring the accuracy of chip manufacturing. The main chamber cryopump 870 and the wafer stage chamber cryopump 880 are mainly used to condense and adsorb polluting gases such as hydrocarbons and water vapor in the main chamber 300 and the wafer stage chamber 400 to prevent the hydrocarbons and water vapor released by the materials from forming carbon deposits or oxidation on the surface of the extreme ultraviolet reflector, so as to ensure that the reflector has better reflectivity and longer service life.

[0033] Further, a mask stage 310 for placing a mask is provided inside the main chamber 300, and a wafer stage 410 for placing a silicon wafer is provided inside the wafer stage chamber 400. The main chamber 300 includes an illumination optical chamber 320 and a projection optical chamber 330. The light source enters the illumination optical chamber 320 from the light source chamber 100 through the connecting chamber 200. The illumination optical chamber 320 is equipped with an illumination optical system for homogenizing and shaping the extreme ultraviolet light beam to achieve uniform illumination of the desired shape. After passing through the illumination optical system, the extreme ultraviolet light beam is uniformly irradiated on the mask, which carries the pattern to be exposed. The extreme ultraviolet light beam reflected by the mask carries the exposure pattern information, and the extreme ultraviolet light beam then enters the projection optical chamber 330. The projection optical chamber 330 is equipped with a projection optical system, and the image formed by the projection optical system is reduced. The image formed by the mask through the projection optical system is projected onto the photoresist coated on the surface of the silicon wafer, thereby completing the exposure. The silicon wafer to be exposed is transferred from the silicon wafer transfer chamber 600 to the silicon wafer stage 410, and the exposed silicon wafer is transferred out from the silicon wafer stage 410 through the silicon wafer transfer chamber 600. The mask transfer chamber 500 is used to transfer masks between the inside and outside of the lithography machine.

[0034] The main chamber cryopump 870 and the wafer stage chamber cryopump 880 are both cryopumps. A cryopump is a vacuum pump that uses a low-temperature surface to condense gas, also known as a condensation pump. Inside the cryopump, there is a cold plate that is cooled to an extremely low temperature by liquid helium or a refrigerator. This cold plate can condense the gas and keep the vapor pressure of the condensate lower than the ultimate pressure of the pump, thereby achieving a pumping effect. The cryopump can obtain a clean vacuum with the maximum pumping rate and the lowest ultimate pressure.

[0035] Optionally, the foreline pump group can use a mechanical pump, which can provide sufficient foreline vacuum for the main pump group. Optionally, the main pump group can use a molecular pump, which relies on high-speed rotating blades to achieve directional gas flow and can work better in molecular flow state. It is mainly used in high vacuum environment, usually within 10 -9 Pa level, suitable for occasions requiring extremely high vacuum such as semiconductor manufacturing processes.

[0036] Furthermore, the fore-stage pump group includes a first fore-stage pump 710, the fore-stage vacuum pipeline includes a light source chamber vacuum pipeline 711 and a connecting chamber vacuum pipeline 712, the light source chamber vacuum pump 810 is connected to the first fore-stage pump 710 through the light source chamber vacuum pipeline 711, and the connecting chamber vacuum pump 820 is connected to the first fore-stage pump 710 through the connecting chamber vacuum pipeline 712.

[0037] Generally speaking, the light source chamber 100 and the connecting chamber 200 contain the same process gas, such as argon or hydrogen, so the light source chamber 100 and the connecting chamber 200 can share the first fore-stage pump 710. Optionally, multiple first fore-stage pumps 710 can be provided, and multiple first fore-stage pumps 710 are connected in parallel. By using multiple first fore-stage pumps 710 in parallel, the flow rate of the pump can be increased while ensuring the same intake speed, thereby improving the vacuum degree; parallel use can distribute the workload to multiple pumps, reduce the working intensity of a single pump, extend the service life of the pump, reduce the failure rate, and ensure the reliability and safety of the system.

[0038] Furthermore, the light source chamber vacuum pipeline 711 and the connecting chamber vacuum pipeline 712 are respectively connected to a first gas mixing pipeline 713, on which a first regulating valve 714 is provided. The first gas mixing pipeline 713 is used to transport protective gas, and the first regulating valve 714 is used to adjust the flow rate of the protective gas. The protective gas is used to adjust the volume fraction of hydrogen in the discharged process gas.

[0039] The process gas of the extreme ultraviolet lithography machine contains a large amount of hydrogen, and the explosion limit of hydrogen is 4.0% to 75.6% (volume fraction), which is flammable and explosive. Therefore, a large amount of protective gas is mixed into the light source chamber vacuum pipeline 711 and the connecting chamber vacuum pipeline 712 through the first gas mixing pipeline 713, and the flow rate of the protective gas is adjusted by the first regulating valve 714, so that the discharged hydrogen gas volume fraction is lower than the lower explosion limit of 4%, thereby ensuring the safety of the system. Optionally, the protective gas can be clean dry air or nitrogen. Optionally, the first regulating valve 714 can be a solenoid valve.

[0040] Furthermore, the front-stage pump group includes a second front-stage pump 720, the front-stage vacuum pipeline includes a main chamber vacuum pipeline 721, a main chamber vacuum pipeline 721, a mask transfer chamber vacuum pipeline 723 and a silicon wafer transfer chamber vacuum pipeline 724, the main chamber vacuum pump 830 is connected to the second front-stage pump 720 through the main chamber vacuum pipeline 721, the silicon wafer stage chamber vacuum pump 840 is connected to the second front-stage pump 720 through the main chamber vacuum pipeline 721, the mask transfer chamber vacuum pump 850 is connected to the second front-stage pump 720 through the mask transfer chamber vacuum pipeline 723, and the silicon wafer transfer chamber vacuum pump 860 is connected to the second front-stage pump 720 through the silicon wafer transfer chamber vacuum pipeline 724.

[0041] Generally speaking, the main chamber 300, the wafer stage chamber 400, the mask transfer chamber 500 and the wafer transfer chamber 600 contain the same process gas, such as hydrogen, so the main chamber 300, the wafer stage chamber 400, the mask transfer chamber 500 and the wafer transfer chamber 600 can share the second front stage pump 720. Optionally, there can be multiple second front stage pumps 720, and multiple second front stage pumps 720 are connected in parallel. By using multiple second front stage pumps 720 in parallel, the flow rate of the pump can be increased while ensuring the same intake speed, thereby improving the vacuum degree; parallel use can distribute the workload to multiple pumps, reduce the working intensity of a single pump, extend the service life of the pump, reduce the failure rate, and ensure the reliability and safety of the system.

[0042] Furthermore, the main chamber vacuum pipeline 721, the main chamber vacuum pipeline 721, the mask transfer chamber vacuum pipeline 723 and the silicon wafer transfer chamber vacuum pipeline 724 are respectively connected to the second gas mixing pipeline 725, and the second gas mixing pipeline 725 is provided with a second regulating valve 726. The second gas mixing pipeline 725 is used to transport protective gas, and the second regulating valve 726 is used to adjust the flow rate of protective gas. The protective gas is used to adjust the volume fraction of hydrogen in the discharged process gas.

[0043] A large amount of protective gas is mixed into the main chamber vacuum pipeline 721, the main chamber vacuum pipeline 721, and the mask transfer chamber vacuum pipeline 723 through the second gas mixing pipeline 725, and the flow rate of the protective gas is adjusted by the second regulating valve 726, so that the discharged hydrogen gas volume fraction is lower than the lower explosion limit of 4%, thereby ensuring the safety of the system. Optionally, the protective gas can be clean dry air or nitrogen. Optionally, the second regulating valve 726 can be a solenoid valve.

[0044] Furthermore, a one-way valve 730 is provided on the front-stage vacuum pipeline, and the one-way valve 730 is used to prevent the internal gas of the front-stage pump group from flowing back, thereby preventing the backflowing gas from polluting the vacuum environment.

[0045] Exemplarily, the front-stage vacuum pipeline also includes a first main pipeline 715, the outlet ends of the light source chamber vacuum pipeline 711 and the connecting chamber vacuum pipeline 712 are both connected to the inlet end of the first main pipeline 715, the outlet end of the first main pipeline 715 is connected to the first front-stage pump 710, and a one-way valve 730 is provided on the first main pipeline 715. The front-stage vacuum pipeline also includes a second main pipeline 727, the outlet ends of the main chamber vacuum pipeline 721, the main chamber vacuum pipeline 721, the mask transfer chamber vacuum pipeline 723 and the wafer transfer chamber vacuum pipeline 724 are all connected to the second main pipeline 727, the outlet end of the second main pipeline 727 is connected to the second front-stage pump 720, and a one-way valve 730 is provided on the second main pipeline 727.

[0046] Furthermore, the cavity wall of the main chamber 300 and the cavity wall of the wafer stage chamber 400 are respectively provided with outlets for communicating with the vacuum acquisition system, and the interior of the main chamber 300 and the interior of the wafer stage chamber 400 are respectively provided with heat shields 10 facing the outlets, and the heat shields 10 are spaced apart from the outlets.

[0047] In this embodiment, the outlet for communicating with the vacuum acquisition system includes multiple outlets communicating with the main pump group, an outlet communicating with the main chamber cryopump 870, and an outlet communicating with the wafer stage chamber cryopump 880, and a heat shield 10 is provided in front of each outlet. It can be understood that when the molecular pump is working, the blades rotate at a high speed and their temperature is relatively high, thereby radiating heat to the inside of the chamber, causing the temperature of its visible optical system to rise. When the cryopump is working, the temperature of the cold plate is very low, and the surrounding heat is absorbed by radiation heat exchange, causing the temperature of its visible optical elements to decrease. The temperature change of the optical element causes deformation, which causes the exposure quality to decrease or even fail. Therefore, a heat shield 10 is provided in front of each outlet of the main chamber 300 and the wafer stage chamber 400 to achieve thermal isolation while ensuring the smooth passage of gas.

[0048] Furthermore, a plurality of main chamber vacuum pumps 830 are provided, and at least two side walls of the main chamber 300 are connected to the main chamber vacuum pumps 830 .

[0049] By setting up multiple main chamber vacuum pumps 830 in parallel, the flow rate of the pump can be increased while ensuring the same air intake speed, thereby improving the vacuum degree; in addition, the workload is distributed to multiple pumps, reducing the work intensity of a single pump, extending the service life of the pump, reducing the failure rate, and ensuring the reliability and safety of the system. In addition, in order to make the air pressure in the main chamber 300 evenly distributed, the main chamber vacuum pump 830 has a relatively even position distribution on the main chamber 300. Optionally, the number of main chamber vacuum pumps 830 may be 6 to 12. For example, when 6 main chamber vacuum pumps 830 are used, 1 is provided on each of the front wall, rear wall, left wall, and right wall of the main chamber 300, and 2 are provided on the top surface; when 7 main chamber vacuum pumps 830 are used, 1 is provided on each of the front wall, rear wall, left wall, and right wall of the main chamber 300, and 3 are provided on the top surface; when 8 main chamber vacuum pumps 830 are used, 1 is provided on each of the front wall and rear wall of the main chamber 300, and 1 is provided on the left wall, right wall, and top surface. When 8 main chamber vacuum pumps 830 are used, 1 main chamber vacuum pump 830 may be provided on the front wall of the main chamber 300, 2 main chamber vacuum pumps may be provided on the left wall and the right wall, and 3 main chamber vacuum pumps may be provided on the top surface; when 9 main chamber vacuum pumps 830 are used, 1 main chamber vacuum pump 830 may be provided on the front wall and the rear wall of the main chamber 300, 2 main chamber vacuum pumps may be provided on the left wall and the right wall, and 3 main chamber vacuum pumps may be provided on the top surface; when 10 main chamber vacuum pumps 830 are used, 2 main chamber vacuum pumps may be provided on the front wall, the left wall and the right wall of the main chamber 300, 1 main chamber vacuum pump may be provided on the rear wall, and 3 main chamber vacuum pumps may be provided on the top surface. It is understandable that the number and position of the main chamber vacuum pumps 830 may be provided according to specific usage requirements, and are not specifically limited here.

[0050] Furthermore, a plurality of wafer stage chamber vacuum pumps 840 are provided, and at least two side walls of the wafer stage chamber 400 are connected to the wafer stage chamber vacuum pumps 840 .

[0051] By setting up multiple wafer stage chamber vacuum pumps 840 in parallel, the flow rate of the pump can be increased while ensuring the same air intake speed, thereby improving the vacuum degree; in addition, the workload is distributed to multiple pumps, reducing the working intensity of a single pump, extending the service life of the pump, reducing the failure rate, and ensuring the reliability and safety of the system. In addition, in order to make the air pressure distribution in the wafer stage chamber 400 uniform, the wafer stage chamber vacuum pump 840 has a relatively uniform position distribution on the wafer stage chamber 400. In some embodiments, the side (right side in the figure) where the wafer stage chamber 400 and the wafer transfer chamber 600 are connected has a top plate that exceeds the main chamber 300. In order to make the wafer stage chamber vacuum pump 840 evenly distributed, the top plate can also be provided with a second outlet for connecting the wafer stage chamber vacuum pump 840. Optionally, the number of wafer stage chamber vacuum pumps 840 may be 2 to 4. For example, when two wafer stage chamber vacuum pumps 840 are used, one is provided on each of the left wall and the right top surface of the wafer stage chamber 400; when three wafer stage chamber vacuum pumps 840 are used, one is provided on each of the front side of the left wall, the rear side of the left wall, and the right top surface of the wafer stage chamber 400; when four wafer stage chamber vacuum pumps 840 are used, two are provided on each of the left wall and the right top surface of the wafer stage chamber 400. It can be understood that the number and position of the wafer stage chamber vacuum pumps 840 can be set according to specific usage needs, and are not specifically limited here.

[0052] Optionally, a plurality of light source chamber vacuum pumps 810 and connection chamber vacuum pumps 820 may be provided, respectively, and the number and position of the vacuum pumps are set according to specific usage requirements.

[0053] Furthermore, the technical solution also provides a lithography machine contamination control method, which is implemented by the above-mentioned lithography machine, and the lithography machine contamination control method includes:

[0054] Turn on the fore-stage pump group to make the fore-stage vacuum pipeline reach the preset first-level vacuum degree;

[0055] According to the fore-stage vacuum pipeline reaching a preset first-level vacuum degree, the light source chamber vacuum pump 810, the connecting chamber vacuum pump 820, the main chamber vacuum pump 830, the wafer stage chamber vacuum pump 840, the mask transfer chamber vacuum pump 850 and the wafer transfer chamber vacuum pump 860 are turned on, so that the light source chamber 100, the connecting chamber 200, the main chamber 300, the wafer stage chamber 400, the mask transfer chamber 500 and the wafer transfer chamber 600 reach a preset second-level vacuum degree, and the preset second-level vacuum degree is less than the preset first-level vacuum degree;

[0056] When the light source chamber 100, the connecting chamber 200, the main chamber 300, the wafer stage chamber 400, the mask transfer chamber 500 and the wafer transfer chamber 600 have all reached the preset second-level vacuum degree, the main chamber cryopump 870 and the wafer stage chamber cryopump 880 are turned on to make the main chamber 300 and the wafer stage chamber 400 reach the preset third-level vacuum degree, and the preset third-level vacuum degree is less than the preset second-level vacuum degree.

[0057] For example, the preset vacuum level can be 10 -5 Pa, the preset secondary vacuum degree can be 10 -9 Pa, the preset third-level vacuum degree can be 10 -11 Pa.

[0058] The above are only preferred specific embodiments of the present invention, but the protection scope of the present invention is not limited thereto. Any changes or substitutions that can be easily thought of by a person skilled in the art within the technical scope disclosed by the present invention should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.

Claims

1. A photolithography machine, characterized in that: The invention comprises a light source chamber (100), a connecting chamber (200), a main chamber (300), a wafer stage chamber (400), a mask transfer chamber (500), a wafer transfer chamber (600) and a vacuum obtaining system, wherein the light source chamber (100) is connected to the main chamber (300) through the connecting chamber (200), the main chamber (300) is connected to the wafer stage chamber (400), the mask transfer chamber (500) is connected to the main chamber (300), and the wafer transfer chamber (600) is connected to the wafer stage chamber (400); The vacuum acquisition system comprises a front pump group, a main pump group, a main chamber cryopump (870) and a wafer stage chamber cryopump (880), wherein the main pump group comprises a light source chamber vacuum pump (810), a connection chamber vacuum pump (820), a main chamber vacuum pump (830), a wafer stage chamber vacuum pump (840), a mask transfer chamber vacuum pump (850) and a wafer transfer chamber vacuum pump (860), wherein the light source chamber vacuum pump (810) is connected to the light source chamber (100), the connection chamber vacuum pump (820) is connected to the connection chamber (200), the main chamber vacuum pump (830) is connected to the main chamber (300), and the wafer stage chamber vacuum pump (840) is connected to the wafer stage chamber. (400), the mask transfer chamber vacuum pump (850) is connected to the mask transfer chamber (500), the silicon wafer transfer chamber vacuum pump (860) is connected to the silicon wafer transfer chamber (600), the light source chamber vacuum pump (810), the connecting chamber vacuum pump (820), the main chamber vacuum pump (830), the silicon wafer stage chamber vacuum pump (840), the mask transfer chamber vacuum pump (850) and the silicon wafer transfer chamber vacuum pump (860) are respectively connected to the front stage pump group through the front stage vacuum pipeline, the main chamber cryogenic pump (870) is connected to the main chamber (300), and the silicon wafer stage chamber cryogenic pump (880) is connected to the silicon wafer stage chamber (400).

2. The photolithography machine according to claim 1, characterized in that: The fore-stage pump group includes a first fore-stage pump (710), the fore-stage vacuum pipeline includes a light source chamber vacuum pipeline (711) and a connecting chamber vacuum pipeline (712), the light source chamber vacuum pump (810) is connected to the first fore-stage pump (710) through the light source chamber vacuum pipeline (711), and the connecting chamber vacuum pump (820) is connected to the first fore-stage pump (710) through the connecting chamber vacuum pipeline (712).

3. The lithography machine according to claim 2, characterized in that: The light source chamber vacuum pipeline (711) and the connecting chamber vacuum pipeline (712) are respectively connected to a first gas mixing pipeline (713), and a first regulating valve (714) is provided on the first gas mixing pipeline (713). The first gas mixing pipeline (713) is used to transport protective gas, and the first regulating valve (714) is used to adjust the flow rate of the protective gas, and the protective gas is used to adjust the volume fraction of hydrogen in the discharged process gas.

4. The lithography machine according to any one of claims 1 to 3, characterized in that: The fore-stage pump group comprises a second fore-stage pump (720), the fore-stage vacuum pipeline comprises a main chamber vacuum pipeline (721), a wafer stage chamber vacuum pipeline (722), a mask transfer chamber vacuum pipeline (723) and a wafer transfer chamber vacuum pipeline (724), the main chamber vacuum pump (830) is connected to the second fore-stage pump (720) through the main chamber vacuum pipeline (721), the wafer stage chamber vacuum pump (840) is connected to the second fore-stage pump (720) through the wafer stage chamber vacuum pipeline (722), the mask transfer chamber vacuum pump (850) is connected to the second fore-stage pump (720) through the mask transfer chamber vacuum pipeline (723), and the wafer transfer chamber vacuum pump (860) is connected to the second fore-stage pump (720) through the wafer transfer chamber vacuum pipeline (724).

5. The photolithography machine according to claim 4, characterized in that: The main chamber vacuum pipeline (721), the silicon wafer stage chamber vacuum pipeline (722), the mask transfer chamber vacuum pipeline (723) and the silicon wafer transfer chamber vacuum pipeline (724) are respectively connected to a second gas mixing pipeline (725), and a second regulating valve (726) is arranged on the second gas mixing pipeline (725). The second gas mixing pipeline (725) is used to transport protective gas, and the second regulating valve (726) is used to adjust the flow rate of the protective gas, and the protective gas is used to adjust the volume fraction of hydrogen in the discharged process gas.

6. The lithography machine according to any one of claims 1 to 3, characterized in that: A one-way valve (730) is provided on the fore-stage vacuum pipeline, and the one-way valve (730) is used to prevent the internal gas of the fore-stage pump group from flowing back.

7. The lithography machine according to any one of claims 1 to 3, characterized in that: The cavity wall of the main chamber (300) and the cavity wall of the wafer stage chamber (400) are respectively provided with outlets for communicating with the vacuum acquisition system, and the interior of the main chamber (300) and the interior of the wafer stage chamber (400) are respectively provided with heat shields (10) facing the outlets, and the heat shields (10) are spaced apart from the outlets.

8. The lithography machine according to any one of claims 1 to 3, characterized in that: The main chamber vacuum pump (830) is provided in plurality, and at least two side walls of the main chamber (300) are connected to the main chamber vacuum pump (830).

9. The lithography machine according to any one of claims 1 to 3, characterized in that: A plurality of the wafer stage chamber vacuum pumps (840) are provided, and at least two side walls of the wafer stage chamber (400) are connected to the wafer stage chamber vacuum pumps (840).

10. A method for controlling contamination of a photolithography machine, characterized in that: The lithography machine according to any one of claims 1 to 9 is implemented, wherein the lithography machine contamination control method comprises: Turn on the fore-stage pump group to make the fore-stage vacuum pipeline reach a preset first-level vacuum degree; According to the fore-stage vacuum pipeline reaching a preset first-stage vacuum degree, the light source chamber vacuum pump (810), the connection chamber vacuum pump (820), the main chamber vacuum pump (830), the wafer stage chamber vacuum pump (840), the mask transfer chamber vacuum pump (850), and the wafer transfer chamber vacuum pump (860) are turned on, so that the light source chamber (100), the connection chamber (200), the main chamber (300), the wafer stage chamber (400), the mask transfer chamber (500), and the wafer transfer chamber (600) reach a preset second-stage vacuum degree, wherein the preset second-stage vacuum degree is less than the preset first-stage vacuum degree; According to the light source chamber (100), the connecting chamber (200), the main chamber (300), the wafer stage chamber (400), the mask transfer chamber (500) and the wafer transfer chamber (600) all reaching a preset second-level vacuum degree, the main chamber cryopump (870) and the wafer stage chamber cryopump (880) are turned on to make the main chamber (300) and the wafer stage chamber (400) reach a preset third-level vacuum degree, wherein the preset third-level vacuum degree is less than the preset second-level vacuum degree.

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