Wafer chuck and process chamber

Abstract

The invention provides a bipolar wafer chuck and a process chamber. The bipolar wafer chuck comprises a chuck body which comprises a multi-layer structure and is used for carrying out electrostatic adsorption on a wafer on the chuck body; the first electrode is arranged on the first layer of the chuck body and is connected with a first power supply through a first input end on the first electrode; the second electrode is arranged on the second layer of the chuck body and comprises a first electrode ring, an input channel and a second input end, and the first electrode ring is connected with a second power supply through the input channel and the second input end.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor manufacturing, and in particular to a wafer chuck and a process chamber. Background Art

[0002] In semiconductor manufacturing equipment, the heating plate is a key component for heating the wafer, and its performance directly affects the quality and efficiency of wafer processing. At present, bipolar heating plates are widely used in various types of semiconductor manufacturing equipment because they can provide fast and uniform heating effects. In order to achieve better temperature control, the heating plate is usually networked with a grid structure to more accurately control the temperature distribution of the heating area.

[0003] In actual applications, the internal space of the equipment is often strictly limited, especially in the peripheral area of ​​the heating plate. This space limitation has a great impact on the design of the grid input. Since the input space is too narrow, the flow of current is restricted, resulting in uneven current distribution. This not only affects the effective conduction of the current, but also causes the current to concentrate in certain areas, causing heat accumulation in these areas, while other areas may have uneven heat distribution. This uneven heat distribution directly affects the performance of the heating plate, which may lead to reduced heating efficiency, or even local overheating or insufficient heating.

[0004] In addition, the narrow input terminal structure may also lead to an increase in contact resistance, thereby increasing the friction effect of heat generation, which not only increases energy loss, but may also increase the operating temperature of the equipment, causing difficulties in thermal management. In order to avoid this problem, special consideration should be given to how to optimize the structural design of the input terminal during design to ensure that the current can flow in smoothly and evenly, and the heat can be evenly distributed on the surface of the heating disk. By reasonably arranging the size, shape and current distribution method of the input terminal, these problems can be effectively solved and the energy efficiency and stability of the equipment can be improved. In order to overcome the above-mentioned defects of the prior art, this field is in urgent need of a wafer chuck technology for improving the uniformity and response speed of the current density of the heating disk, so that the heating disk can achieve a stable heating effect during rapid temperature changes. Summary of the invention

[0005] A brief summary of one or more aspects is given below to provide a basic understanding of these aspects. This summary is not an exhaustive overview of all conceived aspects, and is neither intended to identify the key or decisive elements of all aspects nor to define the scope of any or all aspects. Its only purpose is to give some concepts of one or more aspects in a simplified form as a prelude to a more detailed description that will be given later.

[0006] In order to overcome the above-mentioned defects in the prior art, the present invention provides a wafer chuck and a process chamber for improving the uniformity of the current density and the response speed of the heating disk, so that the heating disk can achieve a stable heating effect during rapid temperature changes.

[0007] Specifically, the bipolar wafer chuck provided according to the first aspect of the present invention includes: a chuck body, including a multi-layer structure, for electrostatically adsorbing the wafer thereon; a first electrode, arranged on the first layer of the chuck body and connected to a first power source via a first input terminal thereon; and a second electrode, arranged on the second layer of the chuck body, including a first electrode ring, an input channel and a second input terminal, wherein the first electrode ring is connected to a second power source via the input channel and the second input terminal.

[0008] Furthermore, in some embodiments of the present invention, the second electrode includes a plurality of input channels, wherein the energy input to the wafer chuck from the first input end is transmitted to the first electrode ring via each of the input channels.

[0009] Furthermore, in some embodiments of the present invention, the width of each input channel is 5 mm to 8 mm.

[0010] Furthermore, in some embodiments of the present invention, the overlapping area of ​​the projections of the plurality of input channels on the first layer of the chuck body and the first electrode accounts for 6% to 14% of the total area thereof.

[0011] Furthermore, in some embodiments of the present invention, the first electrode includes two semicircular first electrode meshes, and a distance of more than 5 mm is maintained between the two first electrode meshes.

[0012] Furthermore, in some embodiments of the present invention, the multiple input channels are distributed in a honeycomb shape, including multiple main channels and multiple branches, the branches are interconnected, and the ends of the branches are respectively connected to the inner side of the first electrode ring.

[0013] Furthermore, in some embodiments of the present invention, the multiple input channels are distributed in a scattered manner, including a main path and multiple branches, each branch is respectively connected to the main path, and an end of each branch is respectively connected to the inner side of the first electrode ring.

[0014] Furthermore, in some embodiments of the present invention, the second electrode further includes: a second electrode ring, disposed on the first layer of the chuck body, wherein the second electrode ring surrounds the periphery of the first electrode and is connected to the first electrode via a connecting member.

[0015] Further, in some embodiments of the present invention, the first power source includes a first radio frequency power source, and / or the second power source includes a second radio frequency power source.

[0016] In addition, the process chamber provided according to the second aspect of the present invention includes a wafer chuck as described in any one of the first aspect of the present invention; a first power supply for providing a first electrical signal to a first electrode of the wafer chuck; and a second power supply for providing a second electrical signal to a second electrode of the wafer chuck. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The above features and advantages of the present invention can be better understood after reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily drawn to scale, and components with similar related properties or features may have the same or similar reference numerals.

[0018] Figure 1 A schematic structural diagram of a wafer chuck provided according to the first aspect of the present invention is shown.

[0019] Figure 2 A schematic structural diagram of a wafer chuck provided according to the first aspect of the present invention is shown.

[0020] Figure 3 A schematic structural diagram of a scattering device for a wafer chuck provided according to the first aspect of the present invention is shown.

[0021] Figure 4 A schematic diagram of the side structure of a second electrode ring provided according to some embodiments of the present invention is shown.

[0022] Reference numerals:

[0023] 10 chuck body

[0024] 20 First electrode

[0025] 21. First Electrode Network

[0026] 22 First input

[0027] 30 Second electrode

[0028] 31. First electrode ring

[0029] 32 input channels

[0030] 33 Second input

[0031] 34 Second electrode ring

[0032] 35 Connectors DETAILED DESCRIPTION

[0033] The following specific embodiments illustrate the implementation of the present invention, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. Although the description of the present invention will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this invention are limited to this implementation. On the contrary, the purpose of introducing the invention in conjunction with the implementation is to cover other options or modifications that may be extended based on the claims of the present invention. In order to provide a deep understanding of the present invention, the following description will include many specific details. The present invention can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present invention, some specific details will be omitted in the description.

[0034] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0035] In addition, the terms "upper", "lower", "left", "right", "top", "bottom", "horizontal" and "vertical" used in the following description should be understood as the directions shown in the paragraph and the related drawings. Such relative terms are only used for the convenience of description and do not mean that the device described therein must be manufactured or operated in a specific direction, and therefore should not be understood as limiting the present invention.

[0036] It is understood that although the terms "first", "second", "third", etc. may be used herein to describe various components, regions, layers and / or parts, these components, regions, layers and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers and / or parts. Therefore, the first component, region, layer and / or part discussed below may be referred to as a second component, region, layer and / or part without departing from some embodiments of the present invention.

[0037] As mentioned above, in semiconductor manufacturing equipment, the heating plate is a key component for heating the wafer, and its performance directly affects the quality and efficiency of wafer processing. At present, bipolar heating plates are widely used in various types of semiconductor manufacturing equipment because they can provide fast and uniform heating effects. In order to achieve better temperature control, the heating plate is usually networked with a grid structure to more accurately control the temperature distribution of the heating area.

[0038] In actual applications, the internal space of the equipment is often strictly limited, especially in the peripheral area of ​​the heating plate. This space limitation has a great impact on the design of the grid input. Since the input space is too narrow, the flow of current is restricted, resulting in uneven current distribution. This not only affects the effective conduction of the current, but also causes the current to concentrate in certain areas, causing heat accumulation in these areas, while other areas may have uneven heat distribution. This uneven heat distribution directly affects the performance of the heating plate, which may lead to reduced heating efficiency, or even local overheating or insufficient heating.

[0039] In order to overcome the above-mentioned defects in the prior art, the present invention provides a wafer chuck technology for improving the uniformity of the current density and the response speed of the heating disk, so that the heating disk can achieve a stable heating effect during rapid temperature changes.

[0040] In some non-limiting embodiments, the bipolar wafer chuck provided in the first aspect of the present invention may be configured in the process chamber provided in the second aspect of the present invention. Specifically, the process chamber comprises a wafer chuck as described in any one of the first aspect of the present invention; a first power source for providing a first electrical signal to a first electrode of the wafer chuck; and a second power source for providing a second electrical signal to a second electrode of the wafer chuck.

[0041] Please refer to Figure 1 , Figure 1 A schematic structural diagram of a wafer chuck provided according to the first aspect of the present invention is shown.

[0042] like Figure 1 As shown, the bipolar wafer chuck includes a chuck body 10, a first electrode 20 and a second electrode 30. The chuck body 10 includes a multi-layer structure for electrostatically adsorbing the wafer thereon. The first electrode 20 is provided on the first layer of the chuck body 10 and is connected to a first power source via a first input terminal 22 thereon. The second electrode 30 is provided on the second layer of the chuck body 10 and includes a first electrode ring 31, an input channel 32 and a second input terminal 33, wherein the first electrode ring 31 is connected to a second power source via the input channel 32 and the second input terminal 33.

[0043] In some embodiments, the first power source includes a first RF power source, and / or the second power source includes a second RF power source (eg, RF power source, 40 MHz to 400 kHz), so that the second electrode 30 cooperates with the first electrode 20 to electrostatically adsorb the wafer on the chuck body 10 .

[0044] In some embodiments, the second electrode 30 may include a plurality of input channels 32 , wherein energy input into the wafer chuck by the first input end 22 is transmitted to the first electrode ring 31 via each input channel 32 .

[0045] In some embodiments, the width of each input channel 32 is 5 mm to 8 mm to avoid the overlap of the vertical projections of the first electrode 20 and the second electrode 30, which would adversely affect their electrostatic adsorption capabilities.

[0046] In some embodiments, the overlapping area of ​​the projection of multiple input channels 32 on the first layer of the chuck body 10 and the first electrode 20 accounts for 6% to 14% of its total area, so as to avoid the adverse effect of the overlapping part of the vertical projection of the first electrode 20 and the second electrode 30 on its electrostatic adsorption capacity.

[0047] Furthermore, the first electrode 20 includes two semicircular first electrode nets 21 , and the distance between the two first electrode nets 21 is kept below 4 mm, so as to improve the electrostatic adsorption capability thereof.

[0048] Furthermore, the two first electrode nets 21 can also be driven by an alternating electric field via a high-frequency radio frequency power source (e.g., 13.56 MHz), whereby the bipolar heating disk forms a strong electric field in the gas medium through an alternating potential difference between the two poles. This electric field can excite electrons in the gas and accelerate their movement, thereby inducing collision ionization and generating plasma.

[0049] In some embodiments, the plurality of input channels 32 are distributed in a honeycomb shape, including a plurality of main channels and a plurality of branch channels. The branch channels are interconnected, and the ends of the branch channels are respectively connected to the inner side of the first electrode ring 31 .

[0050] Specifically, the honeycomb distribution includes 10 inputs of the first electrode ring 31 in the second electrode 30, which improves the uniformity of the current density of the heating disk by increasing the number of input paths and the flow of each branch.

[0051] Please refer to Figure 2 , Figure 2 A schematic structural diagram of a wafer chuck provided according to the first aspect of the present invention is shown.

[0052] like Figure 2 As shown, the edge area of ​​the heating plate is 0.5 mm higher than the middle area thereof. The depth of the first electrode 20 is 1.3 mm, and the depth of the second electrode 30 is 4.7 mm.

[0053] Please refer to Figure 3 , Figure 3 A schematic structural diagram of a scattering device for a wafer chuck provided according to the first aspect of the present invention is shown.

[0054] like Figure 3 As shown, the multiple input channels 32 are distributed in a scattered manner, including a main path and multiple branches, each branch is connected to the main path, and the end of each branch is connected to the inner side of the first electrode ring 31.

[0055] Specifically, the honeycomb distribution includes four inputs of the first electrode ring 31 in the second electrode 30, and by increasing the number of input paths, the width of the input end is widened, thereby improving the uniformity of the current density of the heating disk.

[0056] Please refer to Figure 4 , Figure 4 A schematic diagram of the side structure of a second electrode ring provided according to some embodiments of the present invention is shown.

[0057] like Figure 4 As shown, the second electrode 30 further includes a second electrode ring 34 disposed on the first layer of the chuck body 10 , wherein the second electrode ring 34 surrounds the periphery of the first electrode 20 and is connected to the first electrode via a connector 35 to enhance the radio frequency effect.

[0058] Here, the first electrode 20 and the second electrode 30 can be made of molybdenum, which is an ideal electrode material, especially in a device that requires high temperature heating, such as a heating plate, for maintaining structural integrity and conducting current. The material of the connector can be molybdenum, which is used to be consistent with the first electrode and the second electrode for easy maintenance.

[0059] Specifically, the edge area of ​​the heating plate is 0.5 mm higher than the middle area thereof. The depth of the first electrode 20 is 1.3 mm, and the depth of the second electrode 30 is 4.7 mm. The second electrode ring 34 is at the same height as the first electrode 20 .

[0060] In addition, the bipolar electrostatic chuck in the present application can enhance the effect of the electric field in the plasma by introducing a stable potential difference between the first electrode 20 and the second electrode 30 .

[0061] In summary, the wafer chuck and process chamber provided by the present invention can be used to improve the uniformity of the current density and the response speed of the heating disk, so that the heating disk can achieve a stable heating effect during rapid temperature changes.

[0062] Although the above methods are illustrated and described as a series of actions for simplicity of explanation, it should be understood and appreciated that these methods are not limited by the order of the actions, because according to one or more embodiments, some actions may occur in a different order and / or concurrently with other actions from those illustrated and described herein or not illustrated and described herein but understandable to those skilled in the art.

[0063] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein, but should be granted the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A bipolar wafer chuck, characterized in that: include: A chuck body, including a multi-layer structure, is used for electrostatically adsorbing the wafer thereon; A first electrode, disposed on the first layer of the chuck body and connected to a first power source via a first input terminal thereof; as well as The second electrode is arranged on the second layer of the chuck body, and comprises a first electrode ring, an input channel and a second input end, wherein the first electrode ring is connected to a second power source via the input channel and the second input end.

2. The wafer chuck according to claim 1, wherein: The second electrode includes a plurality of input channels, wherein the energy input to the wafer chuck from the first input end is transmitted to the first electrode ring via each of the input channels.

3. The wafer chuck according to claim 2, characterized in that: The width of each input channel is 5 mm to 8 mm.

4. The wafer chuck according to claim 2, wherein: The overlapping area of ​​the projections of the multiple input channels on the first layer of the chuck body and the first electrode accounts for 6% to 14% of the total area thereof.

5. The wafer chuck according to claim 1, wherein: The first electrode includes two semicircular first electrode meshes, and the distance between the two first electrode meshes is less than 4 mm.

6. The wafer chuck according to claim 1, wherein: The multiple input channels are distributed in a honeycomb shape, including multiple main channels and multiple branch channels. The branch channels are interconnected, and the ends of the branch channels are respectively connected to the inner side of the first electrode ring.

7. The wafer chuck according to claim 1, wherein: The multiple input channels are distributed in a scattered manner, including a main path and multiple branch paths, each of the branch paths is respectively connected to the main path, and the end of each of the branch paths is respectively connected to the inner side of the first electrode ring.

8. The wafer chuck according to claim 1, wherein: The second electrode further comprises: The second electrode ring is arranged on the first layer of the chuck body, wherein the second electrode ring surrounds the periphery of the first electrode and is connected to the first electrode via a connecting member.

9. The wafer chuck according to claim 1, wherein: The first power source includes a first radio frequency power source, and / or The second power source includes a second radio frequency power source.

10. A process chamber, characterized in that: include: The wafer chuck according to any one of claims 1 to 9; A first power supply, configured to provide a first electrical signal to a first electrode of the wafer chuck; as well as The second power supply is used to provide a second electrical signal to the second electrode of the wafer chuck.

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