A Semiconductor Cleaning Liquid, Preparation Method and Cleaning Method of a Semiconductor Structure

Abstract

The present invention provides a semiconductor cleaning solution, a preparation method thereof, and a cleaning method for a semiconductor structure, belonging to the technical field of semiconductor manufacturing. The cleaning solution at least comprises: a solvent; an active component; and an additive, and the general formula of the additive is #imgabs0#; wherein, R1, R2, and R3 are each one of methyl, ethyl, or propyl; the low-temperature resistance temperature of the cleaning solution is -10°C to -22°C. By means of the semiconductor cleaning solution, the preparation method thereof, and the cleaning method for the semiconductor structure provided by the present invention, the cleaning effect can be enhanced, cleaning can be performed under low-temperature conditions, material loss of a substrate or a film layer can be reduced, the influence of material loss on the semiconductor manufacturing process can be avoided, and the yield of the semiconductor manufacturing process can be improved.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductor manufacturing, and particularly relates to a semiconductor cleaning solution, a preparation method thereof, and a cleaning method for a semiconductor structure. Background Art

[0002] In the process of semiconductor manufacturing, cleaning is a crucial step, which runs through multiple process steps of the entire manufacturing process. The purpose of cleaning is to remove impurities on the surface and inside of the semiconductor. These impurities may come from various pollution sources in the manufacturing process, such as particles, metals, or organic substances. The presence of impurities will seriously affect the yield and electrical performance of the chip, and even lead to chip scrapping. Therefore, cleaning can not only improve the yield, ensure the process quality, but also prevent pollution and protect complex chips from damage.

[0003] In the cleaning process, the active components in the cleaning solution may cause material loss of the substrate or the film layer on the substrate. With the continuous reduction of the process node, the impact of material loss on subsequent processes is becoming more and more obvious. At present, reducing the cleaning solution or shortening the cleaning time is used to reduce material loss, but at the same time, the cleaning effect is not ideal, and the chip performance is reduced. Summary of the Invention

[0004] In view of the above-mentioned disadvantages of the prior art, the purpose of the present invention is to provide a semiconductor cleaning solution, a preparation method thereof, and a cleaning method for a semiconductor structure, which can improve the hydrophilicity of the cleaning solution, enhance the cleaning effect, and the coordination of anions and cations in the additive induces the binding of water molecules, that is, through electrostatic induction, it binds to water molecules, and can inhibit the generation of ice crystals under low-temperature conditions, reduce the material loss of the substrate or the film layer, avoid the impact of material loss on the semiconductor process, and can be used in various processes of semiconductor devices to improve the yield of the semiconductor process.

[0005] To achieve the above object and other related objects, the present invention provides a semiconductor cleaning solution, which at least includes:

[0006] A solvent;

[0007] An active component; and

[0008] An additive, the general formula of the additive is ; wherein, R 1 、R 2 and R 3 are each one of methyl, ethyl or propyl; the low-temperature resistance temperature of the cleaning solution is -10°C to -22°C.

[0009] In an embodiment of the present invention, the mass content of the additive in the cleaning solution is greater than or equal to 5%.

[0010] In one embodiment of the present invention, the mass content of the additive in the cleaning solution is 5% - 15%.

[0011] In one embodiment of the present invention, R 1 , R 2 and R 3 are each methyl.

[0012] In one embodiment of the present invention, the solvent includes at least one of an organic solvent or water. The organic solvent includes at least one of n - hexane, isopropanol, cyclohexanone, acetone or methanol. The water is selected from distilled water, deionized water, high - purity water or ultrapure water.

[0013] In one embodiment of the present invention, the active component includes at least one of an acidic substance, a basic substance, an oxidizing substance or an organic substance.

[0014] The present invention also provides a method for preparing a semiconductor cleaning solution, including:

[0015] Adding the active component into the solvent and mixing evenly to obtain an active component solution with a preset mass content; and

[0016] Adding the additive into the active component solution with the preset mass content in a hierarchical mixing manner to obtain a cleaning solution.

[0017] In one embodiment of the present invention, the mass content of the additive in the cleaning solution is added in a gradient of 1% - 2% until the preset mass content is reached.

[0018] The present invention also provides a method for cleaning a semiconductor structure, using the above - mentioned cleaning solution to clean a substrate or a film layer at - 10°C to - 22°C.

[0019] In one embodiment of the present invention, the substrate or the film layer has zero loss during the cleaning process.

[0020] In summary, the present invention provides a semiconductor cleaning solution, a preparation method, and a cleaning method for a semiconductor structure. The unexpected technical effect of the present application is that the additive has the dual properties of a surfactant and a hydrogen bond donor, which improves the hydrophilicity of the cleaning solution, enhances the cleaning effect, and the coordination of anions and cations in the additive induces the binding of water molecules, that is, through electrostatic induction, it binds to water molecules, and can inhibit the generation of ice crystals under low-temperature conditions, reduce the material loss of the substrate or film layer, avoid the influence of material loss on the semiconductor manufacturing process, and improve the yield of the semiconductor manufacturing process. It can improve the safety of the cleaning solution, and also helps to protect the environment and improve the green production of enterprises. The degree of freedom in selecting the types and setting the mixing ratios of the mixed components of the cleaning solution is high, which can meet the application of the cleaning solution in different environments and improve the applicability of the cleaning solution. It can ensure a uniform mixing degree of the additive in the cleaning solution and simultaneously achieve the low-temperature performance of the cleaning solution, thereby reducing the material loss of the substrate or film layer. The cleaning solution can be applied to all links of the semiconductor manufacturing process to obtain high-quality, high-performance, and high-yield semiconductor devices.

[0021] Of course, it is not necessary for any product implementing the present invention to simultaneously achieve all the above-mentioned advantages. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for describing the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present invention, and those of ordinary skill in the art can obtain other drawings based on these drawings without creative efforts.

[0023] Figure 1 It is a relationship diagram between the temperature of the cleaning solution and the etching rate of silicon oxide in the prior art.

[0024] Figure 2 It is a relationship diagram between the temperature of the cleaning solution and the number of silicon oxide surface particles removed in the prior art.

[0025] Figure 3 It is a relationship diagram between the content of the antifreeze and the freezing point of the cleaning solution in the prior art.

[0026] Figure 4 It is a schematic diagram and a scanning tunneling microscope image of the binding of the additive to water molecules in an embodiment.

[0027] Figure 5 It is a trend diagram of the influence of the change in the mass content of the additive on the low-temperature resistance temperature of the cleaning solution and the cleaning effect on the silicon oxide layer in an embodiment. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0028] The following describes the embodiments of the present invention through specific examples. Those skilled in the art can easily understand the other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments. Various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0029] It should be understood that the present invention can be implemented in different forms and should not be construed as limited to the embodiments presented herein. On the contrary, providing these embodiments will make the disclosure thorough and complete, and will fully convey the scope of the present invention to those skilled in the art.

[0030] The technical solutions of the present invention will be further described in detail below in conjunction with the embodiments. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts belong to the scope of protection of the present invention.

[0031] Please refer to Figures 1 to 3 As shown, in the semiconductor manufacturing process, the substrate or film layer needs to be cleaned multiple times to remove impurities on the surface and inside of the substrate or film layer. However, the temperature of the cleaning solution often has a great influence on the cleaning process. For example, when cleaning the silicon oxide layer, the cleaning solution used includes, for example, ammonium hydroxide, hydrogen peroxide, and water, and the mass ratio of ammonium hydroxide, hydrogen peroxide, and water is, for example, 1:1:20. It can be seen from Figure 1 that the etching rate and temperature show a linear relationship: y = 0.3187e 0.04x , where y is the etching rate and x is the temperature, and the correlation coefficient R 2 is 0.9808. That is, as the temperature of the cleaning solution increases, the etching rate of the cleaning solution on the silicon oxide layer increases. Therefore, it is necessary to reduce the temperature of the cleaning solution to reduce the etching of the silicon oxide layer. It can be seen from Figure 2 that as the temperature of the cleaning solution decreases, the number of etched particles removed will decrease, reducing the cleaning effect. It can be seen from Figure 3 that by adding antifreeze, such as ethylene glycol, to the etching solution, as the content of the antifreeze increases, the freezing point of the cleaning solution decreases. Therefore, how to reduce the loss of the cleaning solution to the material to be cleaned while ensuring the cleaning effect has become an urgent problem to be solved.

[0032] The present invention provides a semiconductor cleaning solution, which at least includes a solvent, an active component, an additive, etc. Among them, the solution is used to dissolve and disperse the active component, the active component is used to improve the cleaning effect on the substrate or film layer, the additive has the dual properties of a surfactant and a hydrogen bond donor, enhances the cleaning effect, and can inhibit the generation of ice crystals under low-temperature conditions, reduce the material loss of the substrate or film layer, and improve the yield of the semiconductor manufacturing process.

[0033] In an embodiment of the present invention, the solvent includes, for example, at least one of an organic solvent or water, etc. The organic solvent includes, for example, at least one of n-hexane, isopropyl alcohol, cyclohexanone, acetone, or methanol, etc., to be suitable for cleaning the surface of a semiconductor substrate or film layer and removing possible grease, residual organic pollutants, stearic acid, and organic impurities, etc. Water is, for example, selected from distilled water, deionized water, high-purity water, or ultrapure water, etc., and is suitable for each cleaning process in the semiconductor manufacturing process. In the present invention, the specific type of the solvent is not limited and is selected according to the cleaning process. In this embodiment, for example, taking the cleaning of a silicon oxide layer as an example for elaboration, and the solvent is, for example, high-purity water.

[0034] In an embodiment of the present invention, the active component includes, for example, at least one of an acidic substance, a basic substance, an oxidizing substance, or an organic substance, etc. The acidic substance includes, for example, at least one of hydrofluoric acid, nitric acid, sulfuric acid, or citric acid, etc. The basic substance includes, for example, at least one of sodium hydroxide, ammonium hydroxide, or potassium hydroxide, etc. The organic substance is, for example, at least one of isopropyl alcohol, xylene, or acetone, etc. The oxidizing substance includes, for example, at least one of hydrogen peroxide or ozone, etc. In other embodiments, according to different cleaning processes, other materials can also be selected for the active component, and the present application does not make specific limitations. Among them, the mass content of the active component in the cleaning solution is, for example, 1% - 70%, and is specifically selected according to the cleaning material, the cleaning process, and the cleaning difficulty, etc. In this embodiment, when cleaning the silicon oxide layer, the active component includes, for example, ammonium hydroxide (NH 4 OH) and hydrogen peroxide (H 2 O 2 ), etc. Among them, the mass content of ammonium hydroxide in the cleaning solution is, for example, 5% - 8%, and the mass content of hydrogen peroxide in the cleaning solution is, for example, 10% - 16%. Through H 2 O 2 acts on silicon oxide to form a chemical oxide, and then through NH 4 OH slowly corrodes this chemically grown oxide, thereby removing particles. The two act together to effectively remove the particles and pollutants on the surface of silicon oxide, ensure the purity and performance of semiconductor devices, and when the temperature of the cleaning solution increases, the etching rate of the silicon oxide layer will increase, resulting in serious material loss.

[0035] Please refer to Figure 4As shown, in an embodiment of the present invention, the general formula of the additive is, for example: ; wherein, R 1 , R 2 and R 3 are each one of methyl, ethyl or propyl. The nitrogen bond (N + ) in the additive generates an attraction to negative charges, while the R group connected to the nitrogen atom generates a repulsive force, enabling the additive to form hydrogen bonds in the solution, thereby changing the activity of water. Moreover, the water molecules adsorbed by the carboxyl group (COO - ) are distributed around the compound in a three-dimensional direction under the action of two opposite forces. This structure has the dual properties of a surfactant and a hydrogen bond donor. On the one hand, it improves the hydrophilicity of the cleaning solution and enhances the cleaning effect. On the other hand, the coordination of anions and cations in the additive induces the binding of water molecules, that is, through electrostatic induction, the additive binds to water molecules, further inhibiting the formation of ice crystals, making the cleaning solution have excellent low-temperature resistance. Thus, a good cleaning effect can be obtained at low temperatures, while reducing the cleaning temperature of the cleaning solution. At the same time, when reducing the temperature of the cleaning solution, the activation energy of the active components in the cleaning solution is reduced, avoiding the etching of the material to be cleaned, thereby reducing the material loss of the substrate or film layer, avoiding the influence of material loss on the semiconductor manufacturing process, and improving the performance and yield of the finally obtained semiconductor device.

[0036] In an embodiment of the present invention, in the general formula of the additive, R 1 , R 2 and R 3 are each methyl, that is, the additive is trimethylglycine. In this embodiment, when the additive is selected as trimethylglycine, through the surface activity, electrostatic action and increased hydrophilicity of trimethylglycine, the particle contamination on the semiconductor surface can be effectively removed, and the cleaning efficiency and cleaning quality can be improved. And trimethylglycine, as an additive that is easy to biodegradable and non-toxic, not only improves the safety of the cleaning solution, but also helps to protect the environment and improve the green production of enterprises. In other embodiments, if at least one of R 1 , R 2 and R 3 in the general formula of the additive is one of ethyl or propyl, that is, compared with trimethylglycine, the additive only has a different carbon chain length of the R group, which will affect the polarity of the additive, but can also achieve the dual properties of a surfactant and a hydrogen bond donor, improve the cleaning effect and reduce the cleaning solution temperature.

[0037] In an embodiment of the present invention, the mass content of the additive in the cleaning solution is, for example, greater than or equal to 5%. When the mass content of the additive is less than 5%, the improvement effect on the low-temperature resistance performance of the cleaning solution is not obvious. The etching rate of the cleaning solution on the substrate or the film layer is too high, resulting in an unclear particle removal effect on the substrate or the film layer, and serious material loss of the substrate or the film layer, which is not conducive to the fabrication of semiconductor devices. As the mass content of the additive increases, the surface activity increases and the cleaning effect increases, but the low-temperature characteristics of the cleaning solution gradually decrease, resulting in a decrease in the cleaning effect. Therefore, the mass content of the additive in the cleaning solution is controlled to ensure the cleaning effect. When the low-temperature characteristics of the cleaning solution gradually decrease, the etching rate of the substrate or the film layer material decreases, thereby reducing the material loss of the substrate or the film layer until no material loss of the substrate or the film layer is caused. Therefore, the two act synergistically to avoid material loss while improving the cleaning effect. In this embodiment, the mass content of the additive is, for example, 5% to 15%, and the low-temperature resistance temperature of the obtained cleaning solution is, for example, -10°C to -22°C. Among them, the low-temperature resistance temperature refers to the temperature threshold at which the cleaning solution remains liquid and does not freeze in a low-temperature environment. By controlling the mass content of the additive, while ensuring the low-temperature cleaning effect, material loss is avoided, and at the same time, the mass content of the additive is relatively low, effectively controlling the production cost. In other embodiments, the upper limit of the mass content of the additive is not specifically limited, and is specifically determined according to the cleaning material, the process steps, and the cleaning effect to be achieved, etc., to ensure that the substrate and the film layer after cleaning meet the fabrication requirements. Among them, as the content of the additive further increases, the reduction effect on the low-temperature resistance temperature of the cleaning solution gradually weakens and finally approaches the limit value. In an embodiment of the present invention, the limit value is, for example, near -30°C.

[0038] Please refer to Figure 5As shown, in an embodiment of the present invention, taking trimethylglycine as the additive, ammonium hydroxide and hydrogen peroxide as the active components, and water as the solvent as an example, the effect of the mass content of the additive on the cleaning effect of the silicon oxide layer is studied. Among them, the mass ratio of ammonium hydroxide, hydrogen peroxide and water is, for example, 1:2:10. The mass content of the trimethylglycine additive in the cleaning solution is controlled, and the cleaning time is kept consistent to determine the influence of the mass content of the additive on the cleaning solution. When trimethylglycine is not added, the lowest cleaning temperature of the cleaning solution is 25°C. The cleaning solution has an etching effect on the silicon oxide layer, and the etching rate is, for example, 1.2 Å / min. The number of removed particles (PA RMV) is, for example, 8 e.a (pieces). The particle removal effect is good, but the etching rate of the cleaning solution on the silicon oxide is relatively high, resulting in serious loss of the silicon oxide material. When the mass content of trimethylglycine in the cleaning solution is 5%, the lowest cleaning temperature of the cleaning solution is -10°C. The cleaning solution has an etching effect on the silicon oxide layer, and the etching rate is, for example, 0.3 Å / min. The number of removed particles is, for example, 7 e.a. By adding the additive, the etching rate of the cleaning solution on the silicon oxide is reduced, and material loss can be reduced during the cleaning process. When the mass content of trimethylglycine in the cleaning solution is 8%, the lowest cleaning temperature of the cleaning solution is -15°C. The cleaning solution has an etching effect on the silicon oxide layer, and the etching rate is, for example, 0.1 Å / min. The number of removed particles is, for example, 7 e.a. By increasing the mass content of the additive, the etching rate of the cleaning solution on the silicon oxide can be further reduced, and basically no material loss can be achieved with little influence on the particle removal effect. When the mass content of trimethylglycine in the cleaning solution is 10%, the lowest cleaning temperature of the cleaning solution is -19°C. The cleaning solution does not etch the silicon oxide layer, that is, the etching rate of the cleaning solution on the silicon oxide is, for example, 0 at this time. The number of removed particles is, for example, 6 e.a. During the cleaning process, there is no material loss. When the mass content of trimethylglycine in the cleaning solution is 15%, the lowest cleaning temperature of the cleaning solution is -22°C. The cleaning solution does not etch the silicon oxide layer, that is, the etching rate of the cleaning solution on the silicon oxide is, for example, 0 at this time. The number of removed particles is, for example, 6 e.a. During the cleaning process, there is no material loss. That is, as the mass content of the additive increases, the low-temperature resistance temperature of the cleaning solution decreases, and the effect of reducing the low-temperature resistance temperature gradually weakens. The etching rate of the cleaning solution on the substrate or the film layer decreases until it does not etch the substrate or the film layer. At the same time, the number of removed particles is less affected. The hydrophilic property attached to the additive can enhance the cleaning effect. Therefore, by comprehensively considering the content of the additive and the cleaning temperature of the cleaning solution, the cleaning effect can be improved without material loss, and the problem of material loss during the cleaning process can be solved, improving the performance and yield of the obtained semiconductor devices.

[0039] In an embodiment of the present invention, the pH value of the cleaning solution is, for example, 4 to 13. In this embodiment, when the cleaning solution is used for the silicon oxide layer, the pH value of the cleaning solution is, for example, 8 to 13, or for example, 9 to 11. When cleaning the silicon oxide layer, by controlling the pH value of the cleaning solution, in a low-temperature environment, the volatilization rate of the alkaline substance is low, the compatibility is better, it can have a more excellent particle removal effect, and the material loss can reach zero loss. In other embodiments, when the cleaning solution is used for cleaning other materials, according to the selected active components, the pH value of the cleaning solution is adjusted to ensure the cleaning effect and reduce the material loss. The types of the mixed components of the cleaning solution and the setting degree of freedom of the mixing ratio are high, which can meet the application of the cleaning solution in different environments and improve the applicability of the cleaning solution.

[0040] In an embodiment of the present invention, the present invention provides a preparation method of a semiconductor cleaning solution. Specifically, the active components are added to the solvent and mixed evenly to obtain an active component solution with a preset mass content. Among them, the active components can be added to the solvent once or in batches to ensure the full mixing of the active components and the solvent. During the mixing process, according to the types of the solvent and the active components, ultrasonic stirring, heating stirring, low-temperature stirring or magnetic stirring, etc. are selected to ensure the full and even mixing of the active components and the solvent.

[0041] In an embodiment of the present invention, after obtaining the active component solution with a preset mass content, additives are added and mixed evenly. In this embodiment, the additives are, for example, added to the active component solution with a preset mass content in a hierarchical mixing manner to obtain the cleaning solution. Among them, controlling the mass content of the additives in the cleaning solution to be added, for example, in a gradient of 1% to 2% until the preset mass content is reached, can ensure a uniform mixing degree of the additives in the cleaning solution and at the same time realize the low-temperature performance of the cleaning solution, thereby reducing the material loss of the substrate or the film layer.

[0042] In an embodiment of the present invention, a substrate to be cleaned is provided. The substrate is, for example, a substrate without a formed film layer, such as a substrate made of silicon carbide (SiC), gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN), indium phosphide (InP), gallium arsenide (GaAs), silicon germanium (GeSi), sapphire, silicon wafer, or other semiconductor materials formed by III / V compounds, or a laminated structure composed of semiconductor materials, or silicon on insulator, silicon-on-insulator stacked, silicon germanium on insulator, and germanium on insulator, etc. That is, the cleaning solution can clean different substrates. In other embodiments, at least one film layer or a semiconductor structure is formed on the substrate to be cleaned. The film layer is, for example, a nitride layer, an oxide layer, a carbide layer, an organic layer, a metal layer, or a semiconductor layer, etc. According to the different cleaning materials, different solvents and active components are selected, and a preset mass content of additives is added, which can reduce the low-temperature performance of the cleaning agent, so as to obtain a good cleaning effect at low temperature, remove contaminants such as defects or particles on the surface of the substrate or film layer. At the same time, as the cleaning temperature of the cleaning solution decreases, the material loss of the substrate or film layer can be reduced, avoiding the influence of material loss on the semiconductor manufacturing process, improving the performance and yield of the finally obtained semiconductor device, and meeting the production of small-size semiconductor devices.

[0043] In an embodiment of the present invention, the cleaning solution can be used in different procedures of the semiconductor manufacturing process. For example, it can be used in the post-cleaning process, such as after processes like dry etching, plasma treatment, annealing, chemical mechanical polishing, or deposition. Among them, the film layers processed by dry etching, plasma treatment, annealing, chemical mechanical polishing, or deposition are not specifically limited and can be applied to different processing processes of different materials. After the process is completed, cleaning is carried out with the cleaning solution, which can be carried out at low temperature conditions to ensure the cleaning effect. At the same time, the material loss is reduced, thereby improving the quality of each process link of the semiconductor device and obtaining high-quality, high-performance, and high-yield semiconductor devices.

[0044] In summary, the present invention provides a semiconductor cleaning solution, a preparation method, and a cleaning method for a semiconductor structure. The unexpected technical effect of the present application is that the additive has the dual properties of a surfactant and a hydrogen bond donor, enhancing the cleaning effect, and being able to inhibit the generation of ice crystals under low-temperature conditions, reducing the material loss of the substrate or film layer, avoiding the impact of material loss on the semiconductor manufacturing process, and improving the yield of the semiconductor manufacturing process. It can improve the hydrophilicity of the cleaning solution and enhance the cleaning effect. The coordination of cations and anions in the additive induces the binding of water molecules, that is, through electrostatic induction, it binds to water molecules, making the cleaning solution have excellent low-temperature resistance. It can improve the safety of the cleaning solution, and also helps to protect the environment and improve the green production of enterprises. The degree of freedom in selecting the types and setting the mixing ratios of the mixed components of the cleaning solution is high, which can meet the application of the cleaning solution in different environments and improve the applicability of the cleaning solution. It can ensure a uniform mixing degree of the additive in the cleaning solution and simultaneously achieve the low-temperature performance of the cleaning solution, thereby reducing the material loss of the substrate or film layer. The cleaning solution can be applied to all aspects of the semiconductor manufacturing process to obtain high-quality, high-performance, and high-yield semiconductor devices.

[0045] Throughout the specification, reference to "one embodiment", "an embodiment", or "a specific embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the invention and not necessarily in all embodiments. Thus, the appearances of the phrases "in one embodiment", "in an embodiment", or "in a specific embodiment" in various places throughout the specification are not necessarily referring to the same embodiment. Moreover, the particular features, structures, or characteristics of any specific embodiment of the invention may be combined in any suitable manner with one or more other embodiments. It should be understood that other variations and modifications of the embodiments of the invention described and shown herein may be made in accordance with the teachings herein and will be considered part of the spirit and scope of the invention.

[0046] The embodiments of the present invention disclosed above are only used to help explain the present invention. The embodiments do not describe all the details in detail, nor do they limit the invention to the specific embodiments described. Obviously, many modifications and variations can be made according to the content of this specification. These embodiments are selected and specifically described in this specification to better explain the principles and practical applications of the present invention, so that those skilled in the art can understand and utilize the present invention well. The present invention is only limited by the claims and their full scope and equivalents.

Claims

1. A method for cleaning a semiconductor structure, characterized in that: The substrate or film layer is cleaned by using a cleaning solution at -10°C to -22°C, wherein the cleaning solution comprises a solvent, an active component and an additive, the solvent is water, the active component is ammonium hydroxide and hydrogen peroxide, and the additive is trimethylglycine; The mass ratio of the ammonium hydroxide, the hydrogen peroxide and the water is 1:2:10, and the mass content of the additive in the cleaning solution is 5% to 15%.

2. The semiconductor structure cleaning method according to claim 1, characterized in that: The substrate or the film layer has zero loss during the cleaning process.

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