Method for manufacturing anti-reflection magnesium oxide nanostructure

Abstract

The invention provides a manufacturing method of an anti-reflection magnesium oxide nanostructure. The manufacturing method comprises the following steps: cleaning a magnesium oxide substrate in a corresponding crystalline state; after the cleaning operation on the magnesium oxide substrate is completed, performing deposition operation based on silicon oxide on the magnesium oxide substrate to obtain a silicon oxide layer; performing patterning treatment on the silicon oxide layer to obtain a silicon oxide nano structure positioned on the magnesium oxide substrate; performing deposition operation based on corresponding amorphous magnesium oxide on the magnesium oxide substrate to form a magnesium oxide layer covering the silicon oxide nanostructure and the magnesium oxide substrate; etching the magnesium oxide layer so as to expose the silicon oxide nano structure; removing the silicon oxide nano structure to form a magnesium oxide nano structure; and carrying out annealing operation on the magnesium oxide nano-structure so as to convert the magnesium oxide nano-structure in the corresponding amorphous state into the magnesium oxide nano-structure in the corresponding crystalline state.

Description

Technical Field

[0001] The invention relates to semiconductor technology, and in particular to a method for manufacturing an anti-reflective magnesium oxide nanostructure. Background Art

[0002] Single crystal magnesium oxide transparent materials are widely used in infrared detectors and laser windows, high temperature furnaces and spacecraft observation windows, synchrotron radiation experiments, high energy physics detectors, missile fairings, laser medical equipment and high temperature sensors due to their excellent optical, thermal and mechanical properties. These scenes require single crystal magnesium oxide to have a high transmittance. The traditional technical means is to coat anti-reflection film, but the disadvantage is that it cannot withstand high temperatures for a long time, and other surface anti-reflection technologies are needed to meet the needs of high temperature scenes.

[0003] With the development of nano-optical technology, surface nanostructures provide an effective technical approach for interface anti-reflection. Since single-crystal magnesium oxide is a material that is extremely difficult to etch and cannot be processed by conventional photolithography and etching techniques in MEMS and NEMS, it is urgent to develop new technologies to achieve magnesium oxide nanostructure processing. Summary of the invention

[0004] Based on the above problems, the present invention is proposed to provide a method for manufacturing an anti-reflective magnesium oxide nanostructure that overcomes the above problems or at least partially solves the above problems.

[0005] According to one aspect of the present invention, there is provided a method for manufacturing an anti-reflective magnesium oxide nanostructure, comprising the following steps: Performing a cleaning operation on the corresponding crystalline magnesium oxide substrate; After the cleaning operation of the magnesium oxide substrate is completed, a silicon oxide-based deposition operation is performed on the magnesium oxide substrate to obtain a silicon oxide layer; Performing patterning on the silicon oxide layer to obtain a silicon oxide nanostructure located on the magnesium oxide substrate; Performing a deposition operation based on amorphous magnesium oxide on the magnesium oxide substrate to form a magnesium oxide layer covering the silicon oxide nanostructure and the magnesium oxide substrate; Etching the magnesium oxide layer to expose the silicon oxide nanostructure; removing the silicon oxide nanostructure to form a magnesium oxide nanostructure; The magnesium oxide nanostructure is annealed to convert the corresponding amorphous magnesium oxide nanostructure into a corresponding crystalline magnesium oxide nanostructure.

[0006] Optionally, in the method according to the present invention, the corresponding crystalline magnesium oxide substrate is cleaned, comprising: placing the corresponding crystalline magnesium oxide substrate in an acetone solution for organic cleaning for a preset organic cleaning time; After the organic cleaning is completed, inorganic cleaning is performed on the magnesium oxide substrate using a standard RCA-3 cleaning solution at a preset inorganic cleaning temperature for a preset inorganic cleaning time.

[0007] Optionally, in the method according to the present invention, patterning the silicon oxide layer to obtain a silicon oxide nanostructure located on the magnesium oxide substrate comprises: Performing a chromium-based deposition operation on the silicon oxide layer to form a chromium metal layer located on the silicon oxide layer; Performing a spin coating operation based on an embossing adhesive on the chromium metal layer to form an embossing adhesive layer located on the chromium metal layer; The imprinted adhesive layer is patterned by using nanoimprint technology to form an imprinted nanostructure; Using the imprinted nanostructure as a mask, etching the chromium metal layer to form a chromium metal nanostructure exposing the silicon oxide layer; The chromium metal nanostructure is used as a mask to etch the silicon oxide layer to form a silicon oxide nanostructure exposing the magnesium oxide substrate, and the imprinted nanostructure and the chromium metal nanostructure are removed in sequence.

[0008] Optionally, in the method according to the present invention, the imprinted nanostructure and the chromium metal nanostructure are removed in sequence, comprising: removing the imprinted nanostructure using oxygen plasma; After the removal of the imprinted nanostructure is completed, the chromium metal nanostructure is removed by using a chromium etching solution.

[0009] Optionally, in the method according to the present invention, a deposition operation based on corresponding amorphous magnesium oxide is performed on the magnesium oxide substrate to form a magnesium oxide layer covering the silicon oxide nanostructure and the magnesium oxide substrate, comprising: An ALD deposition process is used to perform a deposition operation based on amorphous magnesium oxide on the magnesium oxide substrate to form a magnesium oxide layer covering the silicon oxide nanostructure and the magnesium oxide substrate.

[0010] Optionally, in the method according to the present invention, etching the magnesium oxide layer to expose the silicon oxide nanostructure comprises: The magnesium oxide layer is etched by an IBE etching process to expose the silicon oxide nanostructure.

[0011] Optionally, in the method according to the present invention, the silicon oxide nanostructure is removed to form a magnesium oxide nanostructure, comprising: The silicon oxide nanostructure is removed by using a BOE process to form a magnesium oxide nanostructure.

[0012] Optionally, in the method according to the present invention, an annealing operation is performed on the magnesium oxide nanostructure to convert the corresponding amorphous magnesium oxide nanostructure into the corresponding crystalline magnesium oxide nanostructure, comprising: The magnesium oxide nanostructure is annealed under a vacuum environment at a preset annealing temperature and a preset annealing time to convert the corresponding amorphous magnesium oxide nanostructure into a corresponding crystalline magnesium oxide nanostructure.

[0013] Optionally, in the method according to the present invention, the method further comprises: Establishing a current manufacturing model based on the manufacturing method, wherein the current manufacturing model includes current manufacturing nodes, and each current manufacturing node includes at least one or more of a silicon oxide deposition node corresponding to a silicon oxide-based deposition operation, a silicon oxide patterning node corresponding to a silicon oxide patterning process, a magnesium oxide deposition node corresponding to an amorphous magnesium oxide-based deposition operation, a magnesium oxide etching node corresponding to etching a magnesium oxide layer, and a magnesium oxide nanostructure annealing node corresponding to an annealing operation on the magnesium oxide nanostructure; Obtaining the current magnesium oxide nanostructure parameters input by the preparation management end based on the manufacturing method, and calling each standard manufacturing model corresponding to each different standard magnesium oxide nanostructure parameter, wherein each annotated manufacturing model includes each standard manufacturing node and each standard node parameter corresponding to each standard manufacturing node; Comparing the current magnesium oxide nanostructure parameters with the different standard magnesium oxide nanostructure parameters; In response to the current magnesium oxide nanostructure parameter being the same as any standard magnesium oxide nanostructure parameter, determining each standard node parameter corresponding to the standard magnesium oxide nanostructure parameter as each current node parameter corresponding to each current manufacturing node; In response to the current magnesium oxide nanostructure parameter being different from any standard magnesium oxide nanostructure parameter, obtaining each standard similarity between the current magnesium oxide nanostructure parameter and each different standard magnesium oxide nanostructure parameter; Based on the similarities of each standard, a standard manufacturing model with the largest corresponding value is selected as an upstream comparison model, and based on the upstream comparison model, each parameter adjustment coefficient corresponding to the current manufacturing model is obtained; The product of each standard node parameter corresponding to the upstream comparison model and each parameter adjustment coefficient is calculated to obtain each current node parameter corresponding to each current manufacturing node.

[0014] Optionally, in the method according to the present invention, obtaining the parameter adjustment coefficients corresponding to the current manufacturing model based on the upstream comparison model includes: Determine all standard manufacturing models except the upstream comparison model in each standard manufacturing model as a downstream determination group, and obtain each upstream similarity between the upstream comparison model and all standard manufacturing models in the downstream determination group; Based on each upstream similarity, a standard manufacturing model with the largest corresponding value is selected as a downstream comparison model, and the upstream comparison model and the downstream comparison model are used to compare the parameters of each standard node corresponding to the same manufacturing node to obtain the comparison coefficient of each parameter; The ratio of the upstream similarity between the corresponding row comparison model and the downstream comparison model to the standard similarity corresponding to the current manufacturing model is calculated, and the coefficients of each parameter comparison coefficient are adjusted based on the obtained similarity ratio to obtain the parameter adjustment coefficients corresponding to the current manufacturing model.

[0015] According to the scheme of the present invention, the present invention successfully prepares a magnesium oxide nanostructure with anti-reflective properties by sequentially performing silicon oxide deposition, patterning, amorphous magnesium oxide deposition, etching and annealing operations on a magnesium oxide substrate. The silicon oxide nanostructure is used as a template, and the amorphous magnesium oxide is converted into a crystalline magnesium oxide nanostructure through precise etching and annealing processes, which significantly improves the optical properties of the magnesium oxide nanostructure. Specifically, the anti-reflective property of the magnesium oxide nanostructure can effectively reduce the reflection loss of light on the surface of the material and improve the transmittance of light, and is suitable for optical devices, solar cells and other fields. In addition, the present invention further ensures the high precision and large-area uniformity of the nanostructure through nanoimprint technology and ALD deposition process, improves the preparation efficiency and product consistency, and further optimizes the crystallization quality of the magnesium oxide nanostructure through annealing operation, enhances its mechanical and chemical stability, and is suitable for applications in high temperature and corrosive environments. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 A flow chart showing a method for manufacturing an anti-reflective magnesium oxide nanostructure according to an embodiment of the present invention is shown; Figure 2 A schematic diagram showing the deposition of a silicon oxide layer on a magnesium oxide substrate in this embodiment is shown; Figure 3 A schematic diagram showing the deposition of a chromium metal layer and an embossing adhesive layer on silicon oxide in this embodiment is shown; Figure 4 A schematic diagram showing patterning of the embossed adhesive layer in this embodiment is shown; FIG5 is a schematic diagram showing etching of the chromium metal layer in this embodiment; Figure 6 A schematic diagram of etching the silicon oxide layer in this embodiment is shown; Figure 7 A schematic diagram showing the removal of the imprinted nanostructure and the chromium metal nanostructure in this embodiment is shown; Figure 8 A schematic diagram of growing magnesium oxide in this embodiment is shown; Fig. 9 A schematic diagram showing etching of the magnesium oxide layer in this embodiment is shown; Fig.10 A schematic diagram showing that the magnesium oxide nanostructure in this embodiment is amorphous; Fig.11 A schematic diagram showing that the magnesium oxide nanostructure in this embodiment is in a crystalline state. DETAILED DESCRIPTION

[0017] The exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present disclosure are shown in the accompanying drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the embodiments set forth herein. On the contrary, these embodiments are provided to enable a more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0018] In order to solve the problems existing in the above background technology, the inventor proposes the solution of the present invention. One embodiment of the present invention provides a method for manufacturing an anti-reflective magnesium oxide nanostructure.

[0019] Figure 1 FIG. 4 is a flow chart showing a method for manufacturing an anti-reflective magnesium oxide nanostructure according to an embodiment of the present invention. Figure 1 As shown, the method starts at step S101, and in step S101, the following contents are included: The corresponding crystalline magnesium oxide substrate is cleaned.

[0020] For example, in this embodiment, when manufacturing the corresponding anti-reflective magnesium oxide nanostructure, it is necessary to first perform a corresponding cleaning operation on the magnesium oxide substrate to remove impurities located on the magnesium oxide substrate. It should be noted that the magnesium oxide substrate in this embodiment is crystalline and its chemical formula is MgO.

[0021] Furthermore, in this embodiment, the above-mentioned “cleaning the corresponding crystalline magnesium oxide substrate” may also include the following steps: placing the corresponding crystalline magnesium oxide substrate in an acetone solution for organic cleaning for a preset organic cleaning time; After the organic cleaning is completed, inorganic cleaning is performed on the magnesium oxide substrate using a standard RCA-3 cleaning solution at a preset inorganic cleaning temperature for a preset inorganic cleaning time.

[0022] For example, in this embodiment, when performing the corresponding organic cleaning, the corresponding magnesium oxide substrate can be placed in an acetone solution and an organic cleaning corresponding to a preset organic cleaning time can be performed based on ultrasound. Here, the preset organic cleaning time can be 5-10 minutes; and further ultrasonically in anhydrous ethanol for 5 minutes, rinsed with deionized water for 2 minutes, and dried with nitrogen; and when performing the corresponding inorganic cleaning, the corresponding magnesium oxide substrate can be placed in a standard RCA-3 cleaning solution under a cleaning environment corresponding to the preset inorganic cleaning temperature and an organic cleaning corresponding to the preset inorganic cleaning time can be performed based on ultrasound. Inorganic cleaning with a long cleaning time, here, the preset inorganic cleaning time can also be 5-10 minutes; in addition, it should be noted that the standard RCA-3 cleaning solution (sometimes referred to as RCA-3 or No. 3 solution) is a chemical solution used to clean wafers in semiconductor manufacturing, and its specific components may be NH4OH, H2O2 and H2O, and the corresponding ratio may be 1:2:7; and further rinsed with deionized water for 2 minutes and dried with nitrogen. It should be noted that since MgO wafers will react with concentrated acid, they can only be cleaned with standard RCA-3 solution.

[0023] In step S102, the following contents are included: After the cleaning operation of the magnesium oxide substrate is completed, a silicon oxide-based deposition operation is performed on the magnesium oxide substrate to obtain a silicon oxide layer.

[0024] For example, in this embodiment, Figure 2 As shown, the deposition operation of silicon oxide can be performed based on PECVD (chemical vapor deposition equipment), wherein the thickness of the corresponding silicon oxide can be 250nm, its chemical formula corresponds to SiO2, and the corresponding parameters of the corresponding deposition operation are: SiH4 / 130sccm, O2 / 13sccm, Ar / 32.5sccm, temperature 130°C, pressure 0.8Pa, and time 830s.

[0025] In step S103, the following contents are included: The silicon oxide layer is patterned to obtain a silicon oxide nanostructure located on the magnesium oxide substrate.

[0026] Furthermore, in this embodiment, the above-mentioned “patterning the silicon oxide layer to obtain a silicon oxide nanostructure located on the magnesium oxide substrate” can be achieved based on the following method steps: Performing a chromium-based deposition operation on the silicon oxide layer to form a chromium metal layer located on the silicon oxide layer; Performing a spin coating operation based on an embossing adhesive on the chromium metal layer to form an embossing adhesive layer located on the chromium metal layer; The imprinted adhesive layer is patterned by using nanoimprint technology to form an imprinted nanostructure; Using the imprinted nanostructure as a mask, etching the chromium metal layer to form a chromium metal nanostructure exposing the silicon oxide layer; The chromium metal nanostructure is used as a mask to etch the silicon oxide layer to form a silicon oxide nanostructure exposing the magnesium oxide substrate, and the imprinted nanostructure and the chromium metal nanostructure are removed in sequence.

[0027] For example, in this embodiment, the process of forming the silicon oxide nanostructure can be described as follows: First, if Figure 3 As shown, a deposition process based on chromium material is implemented on the surface of the silicon oxide layer, so as to form a chromium metal layer on the silicon oxide layer, and its specific thickness is 30nm (vacuum degree <10^-6Torr); this step is intended to provide a stable and easy-to-pattern metal mask layer for subsequent processing, and in this embodiment, the reasons for selecting chromium include the following three reasons: Reason 1: The etching rate of metal chromium in the etching gas CHF3 of silicon oxide is slow; Reason 2: The adhesion between metal chromium and silicon oxide is high, and the prepared mask has high reliability and is not easy to fall off; Reason 3: Metal chromium is easily removed by wet etching solution, and the etching solution only corrodes metal chromium and does not corrode other substances; thereby ensuring the verticality and lateral size of the silicon oxide nanostructure; Next, a layer of imprint glue-based material is applied on the above-mentioned chromium metal layer by spin coating technology to form an imprint glue layer; this imprint glue layer must have good fluidity and curing properties to facilitate subsequent nanoimprint operations. Specifically, the imprint glue comes from PL-R-PC2000, PL-R-UL1000-0 and PL-R-AP of Purin Technology (Hangzhou) Co., Ltd., and the glue spreading process can be specifically as follows: first spread PL-R-PC2000 at 3500 rpm, then directly spread PL-R-AP at 3500 rpm, bake in an oven at 120°C for 5 minutes, and then immediately spread PL-R-UL1000-0 at 3500 rpm.

[0028] Then, if Figure 4As shown, the above-mentioned imprinted adhesive layer is patterned by using nanoimprint technology, and the imprinted adhesive layer is formed into an imprinted nanostructure with a predetermined nanoscale pattern by precise mold imprinting; this step is the key to forming the final nanostructure and determines the shape and size of the nanostructure, wherein the specific process includes: patterning the PL-R-UL1000-0 imprinted adhesive (250KPa pressure, pressurization time 120s), and then etching PL-R-PC2000 downward by RIE oxygen plasma etching with the patterned PL-R-UL1000-0 as a mask (using oxygen plasma to remove the residual adhesive of nanoimprinting, O2 / 20sccm, CHF3 / 2sccm, ICP power 300W, pressure 10mTorr, RF power 30W, etching rate 2.7nm / s); Afterwards, if Figure 5 As shown, the imprinted nanostructure is used as an etching mask, and an appropriate etching process is used to selectively etch the chromium metal layer below. This process removes the portion of the chromium metal layer not covered by the imprinted nanostructure, thereby exposing the silicon oxide layer below to form a chromium metal nanostructure. Here, the corresponding etching process can adopt an ICP process, wherein the ICP process is an inductively coupled plasma (Inductively Coupled Plasma) etching process, and the etching parameters for the chromium metal layer can be specifically: Cl2 / 23.2 sccm, O2 6.8sccm, pressure 10mTorr, pressure ICPpower 500W, RF power 25W, etching rate 0.6nm / s); Then, if Figure 6 As shown, the chromium metal nanostructure is used as a further etching mask to etch the silicon oxide layer; this step is intended to remove the material at the corresponding position in the silicon oxide layer through the pattern of the chromium metal nanostructure until the magnesium oxide substrate underneath is exposed, thereby forming a silicon oxide nanostructure. Similarly, the etching operation on the silicon oxide layer can also use the ICP process, and the corresponding etching gas is CHF3 or CF4 / H2, and it is necessary to ensure that the silicon oxide layer is completely etched. If a "microscopic load effect" occurs during the etching process, it can be alleviated or eliminated by keeping the gas ratio unchanged and increasing the gas flow rate. When CHF3 is used, the corresponding etching parameters are CHF3 / 30sccm, pressure 10mTorr, RF 90w, and etching rate 0.38nm / s; and when CF4 / H2 is used, the corresponding etching parameters are CF4 / 80sccm, H2 / 2sccm, pressure 10mTorr, ICP power 500W, RF power 80W, and etching rate 2.7nm / s; in addition, Finally, if Figure 7As shown, in order to obtain the final silicon oxide nanostructure, the imprinted nanostructure and the chromium metal nanostructure need to be removed in sequence to ensure that the surface of the final product is clean and the corresponding silicon oxide nanostructure is completely retained.

[0029] Furthermore, in this embodiment, the above-mentioned “removing the imprinted nanostructure and the chromium metal nanostructure in sequence” may also include the following steps: removing the imprinted nanostructure using oxygen plasma; After the removal of the imprinted nanostructure is completed, the chromium metal nanostructure is removed by using a chromium etching solution.

[0030] For example, in this embodiment, after the etching of the silicon oxide layer is completed to form the corresponding silicon oxide nanostructure, the imprinted nanostructure can be further removed by oxygen plasma, and then the chromium metal nanostructure can be removed by chromium etching solution (a solution of ammonium cerium nitrate, hypochlorous acid and water, with a mass percentage of 22%:8%:70%).

[0031] In addition, after the chromium metal nanostructures are removed, the crystalline magnesium oxide substrate may be cleaned again based on step S101 to ensure the overall cleanliness of the magnesium oxide substrate.

[0032] In step S104, the following contents are included: A deposition operation based on amorphous magnesium oxide is performed on the magnesium oxide substrate to form a magnesium oxide layer covering the silicon oxide nanostructure and the magnesium oxide substrate.

[0033] For example, in this embodiment, Figure 8 As shown, since an isotropic thin film growth process must be used for the deposition operation of magnesium oxide, an ALD deposition process can be used. Specifically, biscyclopentadienyl magnesium can be used as a magnesium precursor, H2O can be used as an oxygen source, and the process temperature is 150°C; note: the thickness of the grown magnesium oxide layer must be greater than 1 / 2 of the maximum size of the silicon oxide nanostructure spacing to ensure that the silicon oxide nanostructure is completely filled with magnesium oxide and the deposited surface is flat; here, the growth thickness of magnesium oxide can be 300nm, and the growth rate can be 30nm / hour.

[0034] In step S105, the following contents are included: The magnesium oxide layer is etched to expose the silicon oxide nanostructure.

[0035] For example, in this embodiment, Fig. 9As shown, the etching of the magnesium oxide layer can be performed based on an IBE etching process, wherein the IBE (Ion Beam Etching) process, that is, an ion beam etching process, is a thin film technology that uses an ion source to remove materials on a substrate.

[0036] In step S106, the following contents are included: The silicon oxide nanostructure is removed to form a magnesium oxide nanostructure.

[0037] For example, in this embodiment, Fig.10 As shown, the removal of the silicon oxide nanostructure can be performed based on the BOE process, wherein the BOE process in the field of semiconductor manufacturing generally refers to a process of wet etching using a buffered hydrofluoric acid solution (Buffered Oxide Etch, referred to as BOE).

[0038] In step S107, the following contents are included: The magnesium oxide nanostructure is annealed to convert the corresponding amorphous magnesium oxide nanostructure into a corresponding crystalline magnesium oxide nanostructure.

[0039] Here, it should be noted that Fig.10 As shown, since the magnesium oxide layer obtained based on the ALD process is in an amorphous state, in order to improve the quality of the magnesium oxide nanostructure, it is necessary to perform an annealing operation on it to make it recrystallize and transform it from an amorphous state to a corresponding Fig.11 The crystalline state, wherein the process corresponding to the annealing operation can be described as follows: The magnesium oxide nanostructure is annealed under a vacuum environment at a preset annealing temperature and a preset annealing time to convert the corresponding amorphous magnesium oxide nanostructure into a corresponding crystalline magnesium oxide nanostructure.

[0040] For example, in this embodiment, the corresponding preset annealing time may be 60 minutes, and the corresponding preset annealing temperature may be 500° C.

[0041] Further, in the present embodiment, it can be known from the above contents that in the process of manufacturing the corresponding anti-emission type magnesium oxide nanostructure based on the manufacturing method provided in the present embodiment, a plurality of corresponding manufacturing steps are usually involved, and each manufacturing step generally includes corresponding manufacturing parameters. For example, when a deposition operation based on silicon oxide is performed on a magnesium oxide substrate, the corresponding manufacturing parameters may include the deposition thickness of the corresponding silicon oxide; and when the silicon oxide layer is patterned, the corresponding manufacturing parameters may include the structural parameters of the formed silicon oxide nanostructure (such as the spacing between adjacent nanostructures and the corresponding size, etc.); and when a deposition operation based on the corresponding amorphous magnesium oxide is performed on the magnesium oxide substrate, the corresponding manufacturing parameters may include the deposition thickness of the corresponding magnesium oxide; and when the magnesium oxide layer is etched, the corresponding manufacturing parameters may include the corresponding etching thickness; and when the magnesium oxide nanostructure is annealed, the corresponding manufacturing parameters may include the corresponding annealing temperature (such as the aforementioned preset annealing temperature) and annealing time (such as the aforementioned preset annealing duration).

[0042] The manufacturing parameters of each manufacturing step mentioned above are generally calculated based on the structural parameters of the corresponding magnesium oxide nanostructure to be formed. Therefore, in order to quickly determine the manufacturing parameters included in each step node during the corresponding manufacturing process to improve the corresponding manufacturing efficiency, in this embodiment, it can be achieved based on the following method steps: Establishing a current manufacturing model based on the manufacturing method, wherein the current manufacturing model includes current manufacturing nodes, and each current manufacturing node includes at least one or more of a silicon oxide deposition node corresponding to a silicon oxide-based deposition operation, a silicon oxide patterning node corresponding to a silicon oxide patterning process, a magnesium oxide deposition node corresponding to an amorphous magnesium oxide-based deposition operation, a magnesium oxide etching node corresponding to etching a magnesium oxide layer, and a magnesium oxide nanostructure annealing node corresponding to an annealing operation on the magnesium oxide nanostructure; Obtaining the current magnesium oxide nanostructure parameters input by the preparation management end based on the manufacturing method, and calling each standard manufacturing model corresponding to each different standard magnesium oxide nanostructure parameter, wherein each annotated manufacturing model includes each standard manufacturing node and each standard node parameter corresponding to each standard manufacturing node; Comparing the current magnesium oxide nanostructure parameters with the different standard magnesium oxide nanostructure parameters; In response to the current magnesium oxide nanostructure parameter being the same as any standard magnesium oxide nanostructure parameter, determining each standard node parameter corresponding to the standard magnesium oxide nanostructure parameter as each current node parameter corresponding to each current manufacturing node; In response to the current magnesium oxide nanostructure parameter being different from any standard magnesium oxide nanostructure parameter, obtaining each standard similarity between the current magnesium oxide nanostructure parameter and each different standard magnesium oxide nanostructure parameter; Based on the similarities of each standard, a standard manufacturing model with the largest corresponding value is selected as an upstream comparison model, and based on the upstream comparison model, each parameter adjustment coefficient corresponding to the current manufacturing model is obtained; The product of each standard node parameter corresponding to the upstream comparison model and each parameter adjustment coefficient is calculated to obtain each current node parameter corresponding to each current manufacturing node.

[0043] For example, in this embodiment, first, according to the manufacturing method proposed in this embodiment, a current manufacturing model of the corresponding manufacturing method can be constructed, and the current manufacturing model covers multiple current manufacturing nodes, and these nodes include at least one or more of the following: a silicon oxide deposition node for silicon oxide deposition operation, a silicon oxide patterning node for patterning silicon oxide, a magnesium oxide deposition node for amorphous magnesium oxide deposition, a magnesium oxide etching node for etching the magnesium oxide layer, and a magnesium oxide nanostructure annealing node for annealing the magnesium oxide nanostructure; it can be explained that in the manufacture of the corresponding magnesium oxide nanostructure using the manufacturing method of this embodiment, each current manufacturing node should correspond to each current node parameter; Next, by receiving input from the preparation management end, the current magnesium oxide nanostructure parameters of the magnesium oxide nanostructure corresponding to the manufacturing method of the present embodiment are obtained, and a plurality of stored standard manufacturing models are further retrieved, each standard model comprising a series of standard manufacturing nodes and their corresponding standard node parameters, and these standard parameters are associated with their own specific standard magnesium oxide nanostructure parameters; that is, when manufacturing a standard product, each standard node parameter corresponding to each standard manufacturing node is predetermined based on different standardized standard magnesium oxide nanostructure parameters; Subsequently, the current magnesium oxide nanostructure parameters are numerically compared with the parameters of each standard magnesium oxide nanostructure; If the current magnesium oxide nanostructure parameters completely match a certain standard parameter, the standard node parameters corresponding to the standard parameter are directly used as the current node parameters of each current manufacturing node in the current manufacturing model, so that the determination of each current node parameter can be completed quickly, thereby improving the corresponding manufacturing efficiency; If the current parameters do not match all standard parameters, it is necessary to determine the current node parameters of the current manufacturing model based on each standard manufacturing model; Among them, the corresponding specific process includes: first, calculating the similarity between the current manufacturing parameters and each standard manufacturing parameter, and selecting the standard manufacturing model with the highest similarity as the upstream comparison model; based on the upstream comparison model, the parameter adjustment coefficients for adjusting the current manufacturing model parameters can be further obtained, so that each standard node parameter in the upstream comparison model is multiplied by the corresponding parameter adjustment coefficient, thereby obtaining the current node parameters of each current manufacturing node in the current manufacturing model.

[0044] It should be noted that, in this embodiment, for the acquisition of current manufacturing parameters, corresponding parameter adjustment coefficients can be obtained based on standardized standard manufacturing models. In order to reduce the corresponding data calculation amount, the similarity of corresponding parameters of corresponding standard manufacturing models and current manufacturing model can be first obtained, so as to select the standard manufacturing model with the highest similarity as the upstream comparison model, and then obtain the corresponding parameter adjustment coefficients based on the upstream comparison model; here, each parameter adjustment coefficient corresponds to a different current manufacturing node, so each parameter adjustment coefficient may be different.

[0045] Furthermore, in this embodiment, the above-mentioned “obtaining adjustment coefficients of parameters corresponding to the current manufacturing model based on the upstream comparison model” may also include the following steps: Determine all standard manufacturing models except the upstream comparison model in each standard manufacturing model as a downstream determination group, and obtain each upstream similarity between the upstream comparison model and all standard manufacturing models in the downstream determination group; Based on each upstream similarity, a standard manufacturing model with the largest corresponding value is selected as a downstream comparison model, and the upstream comparison model and the downstream comparison model are used to compare the parameters of each standard node corresponding to the same manufacturing node to obtain the comparison coefficient of each parameter; The ratio of the upstream similarity between the corresponding row comparison model and the downstream comparison model to the standard similarity corresponding to the current manufacturing model is calculated, and the coefficients of each parameter comparison coefficient are adjusted based on the obtained similarity ratio to obtain the parameter adjustment coefficients corresponding to the current manufacturing model.

[0046] For example, in this embodiment, since each standard manufacturing model is pre-established, there should be a corresponding conversion relationship between each standard node of the same manufacturing node corresponding to each labeled manufacturing model. Similarly, in order to reduce the corresponding data processing amount, all standard manufacturing models except the upstream comparison model can be determined as a downstream determination group in each standard manufacturing model, and all standard manufacturing models in the downstream determination group are respectively compared with the upstream comparison model for parameters of the corresponding standard magnesium oxide nanostructure parameters to obtain the corresponding upstream similarities, and the standard manufacturing model with the largest corresponding similarity in each upstream similarity is used as the downstream determination group. A row comparison model is used to compare the standard node parameters of the corresponding same manufacturing node between the upstream comparison model and the downstream comparison model, and then the comparison coefficients of each parameter can be obtained; it can be explained that since there is a conversion relationship corresponding to the standard similarity between the current manufacturing model and the upstream manufacturing model, and there is a conversion relationship corresponding to the upstream similarity between the upstream manufacturing model and the downstream manufacturing model, therefore, the upstream similarity can be calculated by ratioing the standard similarity, and the corresponding coefficients of the comparison coefficients of each parameter obtained can be further adjusted based on the obtained similarity ratio, so as to obtain the adjustment coefficients of each parameter of the current manufacturing model.

[0047] In summary, this embodiment successfully prepares a magnesium oxide nanostructure with anti-reflective properties by sequentially performing silicon oxide deposition, patterning, amorphous magnesium oxide deposition, etching and annealing operations on a magnesium oxide substrate. This embodiment uses silicon oxide nanostructures as templates, and converts amorphous magnesium oxide into crystalline magnesium oxide nanostructures through precise etching and annealing processes, which significantly improves the optical properties of the magnesium oxide nanostructures. Specifically, the anti-reflective properties of the magnesium oxide nanostructures can effectively reduce the reflection loss of light on the surface of the material and improve the transmittance of light, which is suitable for optical devices, solar cells and other fields. In addition, this embodiment further ensures the high precision and large-area uniformity of the nanostructure through nanoimprinting technology and ALD deposition process, improves the preparation efficiency and product consistency, and further optimizes the crystallization quality of the magnesium oxide nanostructure through annealing operations, enhances its mechanical and chemical stability, and is suitable for applications in high temperature and corrosive environments.

[0048] In the description provided herein, algorithms and displays are not inherently related to any particular computer, virtual system or other device. Various general purpose systems can also be used together with the examples of the present invention. According to the above description, it is obvious that the structure required for constructing such systems. In addition, the present invention is not directed to any specific programming language either. It should be understood that various programming languages ​​can be utilized to implement the content of the present invention described herein, and the above description of specific languages ​​is for the purpose of disclosing the preferred embodiment of the present invention.

[0049] In the description provided herein, a large number of specific details are described. However, it is understood that embodiments of the present invention can be practiced without these specific details. In some instances, well-known methods, structures and techniques are not shown in detail so as not to obscure the understanding of this description.

[0050] Similarly, it should be understood that in order to streamline the present disclosure and aid in understanding one or more of the various inventive aspects, in the above description of exemplary embodiments of the present invention, various features of the present invention are sometimes grouped together into a single embodiment, figure, or description thereof.

[0051] Those skilled in the art will appreciate that the modules or units or components of the devices in the examples disclosed herein may be arranged in the devices described in the embodiment, or alternatively may be located in one or more devices different from the devices in the examples. The modules in the foregoing examples may be combined into one module or may be divided into multiple submodules.

[0052] Those skilled in the art will appreciate that the modules in the devices in the embodiments may be adaptively changed and arranged in one or more devices different from the embodiments. The modules or units or components in the embodiments may be combined into one module or unit or component, and furthermore may be divided into a plurality of submodules or subunits or subcomponents.

[0053] Furthermore, those skilled in the art will appreciate that although some embodiments described herein include certain features included in other embodiments but not other features, the combination of features from different embodiments is meant to be within the scope of the present invention and to form different embodiments.

[0054] In addition, some of the embodiments are described herein as methods or combinations of method elements that can be implemented by a processor of a computer system or by other devices that perform the functions. Therefore, a processor with necessary instructions for implementing the method or method elements forms a device for implementing the method or method elements. In addition, the elements described herein of the device embodiments are examples of devices for implementing the functions performed by the elements for the purpose of implementing the invention.

[0055] As used herein, unless otherwise specified, the use of ordinal numbers "first," "second," "third," etc. to describe common objects merely indicates that different instances of similar objects are involved, and is not intended to imply that the objects so described must have a given order in time, space, order, or in any other manner.

[0056] Although the present invention has been described according to a limited number of embodiments, it will be apparent to those skilled in the art, with the benefit of the above description, that other embodiments may be envisioned within the scope of the invention thus described. In addition, it should be noted that the language used in this specification is primarily selected for readability and instructional purposes, rather than for explaining or limiting the subject matter of the present invention.

Claims

1. A method for producing an anti-reflective magnesium oxide nanostructure, characterized in that: The following steps are involved: Performing a cleaning operation on the corresponding crystalline magnesium oxide substrate; After the cleaning operation of the magnesium oxide substrate is completed, a silicon oxide-based deposition operation is performed on the magnesium oxide substrate to obtain a silicon oxide layer; Performing patterning on the silicon oxide layer to obtain a silicon oxide nanostructure located on the magnesium oxide substrate; Performing a deposition operation based on amorphous magnesium oxide on the magnesium oxide substrate to form a magnesium oxide layer covering the silicon oxide nanostructure and the magnesium oxide substrate; Etching the magnesium oxide layer to expose the silicon oxide nanostructure; removing the silicon oxide nanostructure to form a magnesium oxide nanostructure; The magnesium oxide nanostructure is annealed to convert the corresponding amorphous magnesium oxide nanostructure into a corresponding crystalline magnesium oxide nanostructure.

2. The method for manufacturing an anti-reflective magnesium oxide nanostructure according to claim 1, characterized in that: The corresponding crystalline magnesium oxide substrate is cleaned, including: placing the corresponding crystalline magnesium oxide substrate in an acetone solution for organic cleaning for a preset organic cleaning time; After the organic cleaning is completed, inorganic cleaning is performed on the magnesium oxide substrate using a standard RCA-3 cleaning solution at a preset inorganic cleaning temperature for a preset inorganic cleaning time.

3. The method for manufacturing an anti-reflective magnesium oxide nanostructure according to claim 1, characterized in that: The silicon oxide layer is patterned to obtain a silicon oxide nanostructure located on the magnesium oxide substrate, comprising: Performing a chromium-based deposition operation on the silicon oxide layer to form a chromium metal layer located on the silicon oxide layer; Performing a spin coating operation based on an embossing adhesive on the chromium metal layer to form an embossing adhesive layer located on the chromium metal layer; The imprinted adhesive layer is patterned by using nanoimprint technology to form an imprinted nanostructure; Using the imprinted nanostructure as a mask, etching the chromium metal layer to form a chromium metal nanostructure exposing the silicon oxide layer; The chromium metal nanostructure is used as a mask to etch the silicon oxide layer to form a silicon oxide nanostructure exposing the magnesium oxide substrate, and the imprinted nanostructure and the chromium metal nanostructure are removed in sequence.

4. The method for manufacturing an anti-reflective magnesium oxide nanostructure according to claim 3, characterized in that: The imprinted nanostructure and the chromium metal nanostructure are removed in sequence, including: removing the imprinted nanostructure using oxygen plasma; After the removal of the imprinted nanostructure is completed, the chromium metal nanostructure is removed by using a chromium etching solution.

5. The method for manufacturing an anti-reflective magnesium oxide nanostructure according to claim 1, characterized in that: A deposition operation based on amorphous magnesium oxide is performed on the magnesium oxide substrate to form a magnesium oxide layer covering the silicon oxide nanostructure and the magnesium oxide substrate, comprising: An ALD deposition process is used to perform a deposition operation based on amorphous magnesium oxide on the magnesium oxide substrate to form a magnesium oxide layer covering the silicon oxide nanostructure and the magnesium oxide substrate.

6. The method for manufacturing an anti-reflective magnesium oxide nanostructure according to claim 1, characterized in that: The magnesium oxide layer is etched to expose the silicon oxide nanostructure, comprising: The magnesium oxide layer is etched by an IBE etching process to expose the silicon oxide nanostructure.

7. The method for manufacturing an anti-reflective magnesium oxide nanostructure according to claim 1, characterized in that: The silicon oxide nanostructure is removed to form a magnesium oxide nanostructure, comprising: The silicon oxide nanostructure is removed by using a BOE process to form a magnesium oxide nanostructure.

8. The method for manufacturing an anti-reflective magnesium oxide nanostructure according to claim 1, characterized in that: Annealing the magnesium oxide nanostructure to convert the corresponding amorphous magnesium oxide nanostructure into a corresponding crystalline magnesium oxide nanostructure, comprising: The magnesium oxide nanostructure is annealed under a vacuum environment at a preset annealing temperature and a preset annealing time to convert the corresponding amorphous magnesium oxide nanostructure into a corresponding crystalline magnesium oxide nanostructure.

9. The method for manufacturing an anti-reflective magnesium oxide nanostructure according to claim 1, characterized in that: The method further comprises: Establishing a current manufacturing model based on the manufacturing method, wherein the current manufacturing model includes current manufacturing nodes, and each current manufacturing node includes at least one or more of a silicon oxide deposition node corresponding to a silicon oxide-based deposition operation, a silicon oxide patterning node corresponding to a silicon oxide patterning process, a magnesium oxide deposition node corresponding to an amorphous magnesium oxide-based deposition operation, a magnesium oxide etching node corresponding to etching a magnesium oxide layer, and a magnesium oxide nanostructure annealing node corresponding to an annealing operation on the magnesium oxide nanostructure; Obtaining the current magnesium oxide nanostructure parameters input by the preparation management end based on the manufacturing method, and calling each standard manufacturing model corresponding to each different standard magnesium oxide nanostructure parameter, wherein each annotated manufacturing model includes each standard manufacturing node and each standard node parameter corresponding to each standard manufacturing node; Comparing the current magnesium oxide nanostructure parameters with the different standard magnesium oxide nanostructure parameters; In response to the current magnesium oxide nanostructure parameter being the same as any standard magnesium oxide nanostructure parameter, determining each standard node parameter corresponding to the standard magnesium oxide nanostructure parameter as each current node parameter corresponding to each current manufacturing node; In response to the current magnesium oxide nanostructure parameter being different from any standard magnesium oxide nanostructure parameter, obtaining each standard similarity between the current magnesium oxide nanostructure parameter and each different standard magnesium oxide nanostructure parameter; Based on the similarities of each standard, a standard manufacturing model with the largest corresponding value is selected as an upstream comparison model, and based on the upstream comparison model, each parameter adjustment coefficient corresponding to the current manufacturing model is obtained; The product of each standard node parameter corresponding to the upstream comparison model and each parameter adjustment coefficient is calculated to obtain each current node parameter corresponding to each current manufacturing node.

10. The method for manufacturing an anti-reflective magnesium oxide nanostructure according to claim 9, characterized in that: Acquiring parameter adjustment coefficients corresponding to the current manufacturing model based on the upstream comparison model includes: Determine all standard manufacturing models except the upstream comparison model in each standard manufacturing model as a downstream determination group, and obtain each upstream similarity between the upstream comparison model and all standard manufacturing models in the downstream determination group; Based on each upstream similarity, a standard manufacturing model with the largest corresponding value is selected as a downstream comparison model, and the upstream comparison model and the downstream comparison model are used to compare the parameters of each standard node corresponding to the same manufacturing node to obtain the comparison coefficient of each parameter; The ratio of the upstream similarity between the corresponding row comparison model and the downstream comparison model to the standard similarity corresponding to the current manufacturing model is calculated, and the coefficients of each parameter comparison coefficient are adjusted based on the obtained similarity ratio to obtain the parameter adjustment coefficients corresponding to the current manufacturing model.

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