High-integration reconfigurable on-chip inductor, reconfiguration method thereof and radio frequency amplifier

Abstract

The invention provides a high-integration-level reconfigurable on-chip inductor and a reconfiguration method thereof and a radio frequency amplifier, the on-chip inductor comprises an on-chip module and an off-chip bonding module, the on-chip module comprises a plurality of on-chip connecting units arranged in parallel, and the off-chip bonding module comprises bonding wires. According to the method, the corresponding bonding wire is determined based on the target inductance parameter of the needed on-chip inductor, the bonding wire is electrically connected with the corresponding on-chip connecting unit, the needed on-chip inductor is obtained, and when the target inductance parameter changes, reconstruction of the on-chip inductor can be achieved by adjusting the bonding wire. According to the reconfigurable on-chip inductor provided by the invention, the corresponding bonding wires can be selected according to actual requirements to carry out inductor reconfiguration on the on-chip module, so that the quality factor of the obtained reconfigured inductor meets the requirements of the required inductor; the overall integration level of the on-chip inductor is high, the inductance value debugging is simpler and more flexible, the research and development period of a radio frequency circuit is effectively shortened, the performance of the radio frequency circuit is improved, and the application cost of a chip is reduced.

Description

Technical Field

[0001] The present application relates to the field of radio frequency circuit design, and specifically to a highly integrated reconfigurable on-chip inductor and a reconstruction method thereof, and a radio frequency amplifier. Background Art

[0002] With the continuous advancement of integrated circuit design and manufacturing technology, the size of transistors has been proportionally reduced, which has led to a continuous reduction in chip area. However, the area of ​​on-chip passive devices, especially on-chip inductors, has hardly changed, and on-chip inductors are almost must-use components in RF amplifier circuits, especially in RF circuit impedance matching, which directly determines the circuit performance. As components for input and output matching networks, power supply feeds and other application scenarios, on-chip inductors have higher requirements for on-chip inductors with high quality factors as the system's requirements for indicators increase. However, the existing on-chip inductors have fixed inductance parameters. When the inductance requirements change, discrete inductors can only be added to the periphery of the chip, or the chip can only be redesigned to meet the needs of using inductors, thereby increasing the number of chip castings and increasing R&D costs.

[0003] Therefore, how to provide an on-chip inductor with high integration, low cost and reusability is a technical problem that urgently needs to be solved. Summary of the invention

[0004] In view of the above-mentioned shortcomings of the prior art, the present application provides a technical solution for a reconfigurable on-chip inductor to solve at least one of the above-mentioned technical problems.

[0005] In order to achieve the above-mentioned purpose and other related purposes, the technical solution provided by this application is as follows.

[0006] According to a first aspect of an embodiment of the present application, a highly integrated reconfigurable on-chip inductor is provided, comprising:

[0007] An on-chip module, comprising a plurality of on-chip connection units arranged in parallel with each other;

[0008] The off-chip bonding module includes bonding wires. According to the target inductance parameters of the required on-chip inductance, the corresponding bonding wires are selected to electrically connect the corresponding on-chip connection units to obtain the required on-chip inductance, so as to realize on-chip inductance reconstruction.

[0009] In one embodiment of the present application, the on-chip connection unit includes two chip lead-out terminals and multiple metal wires, the first end of each of the metal wires is connected to the first chip lead-out terminal, the second end of each of the metal wires is connected to the second chip lead-out terminal, the multiple metal wires are connected in parallel, and the spacing and size of the multiple metal wires are the same.

[0010] In one embodiment of the present application, the off-chip bonding module includes a single or N bonding wires. If the off-chip bonding module includes a single bonding wire, the first end of the bonding wire is connected to the second chip lead-out terminal in the first on-chip connection unit, and the second end of the bonding wire is connected to the first chip lead-out terminal in the Mth on-chip connection unit; if the off-chip bonding module includes multiple bonding wires, the first end of the first bonding wire is connected to the second chip lead-out terminal in the first on-chip connection unit, The second end of the i-th bonding wire is connected to the first chip lead-out terminal in the j-th on-chip connection unit, the first end of the i+1-th bonding wire is connected to the second chip lead-out terminal in the j-th on-chip connection unit, and the second end of the N-th bonding wire is connected to the first chip lead-out terminal in the M-th on-chip connection unit, wherein M is the number of the on-chip connection units, N is the number of the bonding wires, M, N, i, j are positive integers, M, N≥2, 1≤i≤N-1, 2≤j≤M-1.

[0011] According to a second aspect of an embodiment of the present application, there is also provided a reconstruction method for the highly integrated reconfigurable on-chip inductor as described above, comprising:

[0012] Obtaining target inductance parameters of a required on-chip inductor;

[0013] The target inductance parameter is compared with a current inductance parameter of a current reconfigurable on-chip inductor, and the required on-chip inductor is constructed according to the comparison result.

[0014] In one embodiment of the present application, the target inductance parameter is compared with the inductance parameter of the current reconfigurable on-chip inductor, and the required on-chip inductance is constructed according to the comparison result, including: when the target inductance parameter is equal to the current inductance parameter, determining that the current reconfigurable on-chip inductor is the required on-chip inductor; when the target inductance parameter is greater than or less than the current inductance parameter, adjusting the off-chip bonding module to obtain the required on-chip inductance.

[0015] In one embodiment of the present application, before obtaining the target inductance parameters of the required on-chip inductor, it also includes: obtaining range parameters of the reconfigurable on-chip inductor corresponding to multiple bonding wires, the range parameters including an upper inductance threshold and a lower inductance threshold; adjusting the number of bonding wires in the off-chip bonding module corresponding to different range parameters to obtain the inductance value of the relevant single bonding wire.

[0016] In one embodiment of the present application, when the target inductance parameter is greater than or less than the current inductance parameter, the off-chip bonding module is adjusted to obtain the required on-chip inductance, including: if the target inductance parameter is greater than the upper limit inductance threshold corresponding to the current reconfigurable on-chip inductance or the target inductance parameter is less than the lower limit inductance threshold corresponding to the current reconfigurable on-chip inductance, a preset single bonding line of the corresponding inductance value is selected to connect to the on-chip module to obtain the required on-chip inductance; if the target inductance parameter is greater than the current inductance parameter and less than the upper limit inductance threshold corresponding to the current reconfigurable on-chip inductance, the number of bonding lines corresponding to the current reconfigurable on-chip inductance is increased to obtain the required on-chip inductance; if the target inductance parameter is less than the current inductance parameter and greater than the lower limit inductance threshold corresponding to the current reconfigurable on-chip inductance, the number of bonding lines corresponding to the current reconfigurable on-chip inductance is reduced to obtain the required on-chip inductance.

[0017] According to a third aspect of an embodiment of the present application, a radio frequency amplifier is also provided, and the radio frequency amplifier includes the highly integrated reconfigurable on-chip inductor as described above.

[0018] The present application provides a highly integrated reconfigurable on-chip inductor and a reconstruction method thereof, and a radio frequency amplifier. The on-chip inductor includes an on-chip module and an off-chip bonding module. The on-chip module includes a plurality of on-chip connection units arranged in parallel with each other. The off-chip bonding module includes bonding wires. The corresponding bonding wires are determined based on the target inductance parameters of the required on-chip inductor, and the bonding wires are electrically connected to the corresponding on-chip connection units to obtain the required on-chip inductor. When the target inductance parameters change, the on-chip inductor can be reconstructed by adjusting the bonding wires. The reconfigurable on-chip inductor provided by the present application can select the corresponding bonding wires to reconstruct the inductance of the on-chip module according to actual needs, so that the quality factor of the reconstructed inductor meets the requirements of the required inductance; the overall integration of the on-chip inductor is high, and the inductance value debugging is simpler and more flexible, which effectively shortens the research and development cycle of the radio frequency circuit, improves the performance of the radio frequency circuit, and reduces the application cost of the chip.

[0019] It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] The drawings herein are incorporated into the specification and constitute a part of the specification, showing embodiments consistent with the present invention, and together with the specification, are used to explain the principles of the present invention. Obviously, the drawings described below are only some embodiments of the present invention, and for those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative work. In the drawings:

[0021] Figure 1is a schematic diagram of a highly integrated reconfigurable on-chip inductor shown in an exemplary embodiment of the present invention;

[0022] Figure 2 is a schematic diagram of a reconstructed on-chip inductor including three on-chip connection units and a single bonding wire according to an exemplary embodiment of the present invention;

[0023] Figure 3 is a schematic diagram of a reconstructed on-chip inductor including five on-chip connection units and four bonding wires according to an exemplary embodiment of the present invention;

[0024] Figure 4 is a schematic diagram of a reconstructed on-chip inductor including five on-chip connection units and two bonding wires according to an exemplary embodiment of the present invention;

[0025] Figure 5 is a schematic diagram of bonding wire arch height in a highly integrated reconfigurable chip shown in an exemplary embodiment of the present invention;

[0026] Figure 6 An exemplary embodiment of the present invention is shown Figure 3 Schematic diagram of the corresponding reconfigurable on-chip inductor with a quality factor of 3.5nH;

[0027] Figure 7 An exemplary embodiment of the present invention is shown Figure 3 Schematic diagram of the corresponding reconfigurable on-chip inductor with an inductance value of 3.5nH;

[0028] Figure 8 An exemplary embodiment of the present invention is shown Figure 4 Schematic diagram of the corresponding reconfigurable on-chip inductor with a quality factor of 1.27nH;

[0029] Fig. 9 An exemplary embodiment of the present invention is shown Figure 4 Schematic diagram of the corresponding reconfigurable on-chip inductor with an inductance value of 1.27nH;

[0030] Fig.10 An exemplary embodiment of the present invention is shown Figure 5 Schematic diagram of the corresponding reconfigurable on-chip inductor 743pH quality factor;

[0031] Fig.11 An exemplary embodiment of the present invention is shown Figure 5 Schematic diagram of the corresponding reconfigurable on-chip inductor 743pH inductance value;

[0032] Fig.12 The flowchart of a method for reconfiguring a highly integrated reconfigurable on-chip inductor is shown in an exemplary embodiment of the present invention. DETAILED DESCRIPTION

[0033] The following will describe the embodiments of the present invention with reference to the accompanying drawings and preferred embodiments. Those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention. It should be understood that the preferred embodiments are only for illustrating the present invention, not for limiting the scope of protection of the present invention.

[0034] It should be noted that the illustrations provided in the following embodiments are only schematic illustrations of the basic concept of the present invention, and thus the drawings only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0035] In the following description, numerous details are discussed to provide a more thorough explanation of the embodiments of the present invention. However, it is obvious to those skilled in the art that the embodiments of the present invention can be implemented without these specific details. In other embodiments, well-known structures and devices are shown in the form of block diagrams rather than in detail to avoid making the embodiments of the present invention difficult to understand.

[0036] With the continuous advancement of integrated circuit design and manufacturing technology, the size of transistors has been proportionally reduced, which has led to a continuous reduction in chip area. However, the area of ​​on-chip passive devices, especially on-chip inductors, has hardly changed, and on-chip inductors are almost must-use components in RF amplifier circuits, especially in RF circuit impedance matching, which directly determines the circuit performance. As components for input and output matching networks, power supply feeds and other application scenarios, on-chip inductors have higher requirements for on-chip inductors with high quality factors as the system's requirements for indicators increase. However, the existing on-chip inductors have fixed inductance parameters. When the inductance demand changes, other inductors can only be replaced to meet the demand for the inductor, which increases the number of chip castings and increases R&D costs.

[0037] To solve the above problems, Figure 1 As shown, the present application provides a highly integrated reconfigurable on-chip inductor, comprising:

[0038] An on-chip module, comprising a plurality of on-chip connection units 1110 arranged in parallel with each other;

[0039] The off-chip bonding module includes a bonding wire 1210. According to the target inductance parameter of the required on-chip inductance, the corresponding bonding wire 1210 is selected to electrically connect the corresponding on-chip connection unit 1110 to obtain the required on-chip inductance to achieve on-chip inductance reconstruction.

[0040] Specifically, Figure 1 As shown, multiple on-chip connection units 1110 are arranged in parallel to each other to form an on-chip module. The off-chip bonding module includes bonding wires 1210. The bonding wires 1210 of the off-chip bonding module are adjusted according to the target inductance parameters of the on-chip inductance required by the RF circuit. The multiple on-chip connection units 1110 in the on-chip module are electrically connected through a single or multiple bonding wires 1210 to obtain the required on-chip inductance, thereby realizing the reconstruction of the on-chip inductance.

[0041] Specifically, the on-chip connection unit includes two chip lead terminals and a plurality of metal wires, a first end of each metal wire is connected to a first chip lead terminal, a second end of each metal wire is connected to a second chip lead terminal, a plurality of metal wires are connected in parallel, and the plurality of metal wires have the same spacing and the same size. Specifically, Figure 2 As shown, each on-chip connection unit 1110 includes two chip lead-out terminals (Port1, Port2) and multiple metal wires, the first terminal of each metal wire is connected to the first chip lead-out terminal Port1, the second terminal of each metal wire is connected to the second chip lead-out terminal Port2, the multiple metal wires are connected in parallel with each other, the line widths of the multiple metal wires are the same, and the line spacings of the multiple metal wires are the same. Among them, the first chip lead-out terminal Port1 of the first on-chip connection unit is the first tap of the on-chip inductor, and the second chip lead-out terminal Port2 of the last on-chip connection unit is the second tap of the on-chip inductor.

[0042] It should be noted that when the skin effect is not considered, the current in each metal wire is evenly distributed. When the frequency is high, the skin effect becomes obvious. Due to the use of multiple metal wires for connection, the current will only flow to the edges of each metal wire and will not gather at the edge of a single metal wire, thereby reducing the metal connection resistance and improving the quality factor of the on-chip inductor.

[0043] In more detail, the off-chip bonding module includes a single or N bonding wires 1210. If the off-chip bonding module includes a single bonding wire 1210, the first end of the bonding wire 1210 is connected to the second chip lead-out terminal Port2 in the first on-chip connection unit 1110, and the second end of the bonding wire 1210 is connected to the first chip lead-out terminal Port1 in the Mth on-chip connection unit 1110; if the off-chip bonding module includes multiple bonding wires 1210, the first end of the first bonding wire 1211 is connected to the second chip lead-out terminal Port2 in the first on-chip connection unit 1111, and the i-th bonding wire 1210 is connected to the first chip lead-out terminal Port1 in the Mth on-chip connection unit 1110. The second end of wire 1210 is connected to the first chip lead-out terminal Port1 in the j-th on-chip connection unit 1110, the first end of the i+1-th bonding wire 1210 is connected to the second chip lead-out terminal Port2 in the j-th on-chip connection unit 1110, and the second end of the N-th bonding wire 121N is connected to the first chip lead-out terminal Port1 in the M-th on-chip connection unit 1110, wherein M is the number of on-chip connection units 1110, N is the number of bonding wires 1210, M, N, i, j are positive integers, M, N≥2, 1≤i≤N-1, 2≤j≤M-1.

[0044] Combination Figure 2 and Figure 5 As shown, the off-chip bonding module 1100 may be a single bonding wire 1210 or include a plurality of bonding wires 1210. Figure 2 As shown, when the off-chip bonding module is a single bonding wire 1210, the first end of the bonding wire 1210 is connected to the second chip lead-out terminal Port2 in the first on-chip connection unit 1110, and the second end of the bonding wire 1210 is connected to the first chip lead-out terminal Port1 in the last on-chip connection unit 1110, wherein the number of on-chip modules is not limited here.

[0045] like Figure 3As shown, when the on-chip module includes five on-chip connection units (1111-1115), a bonding wire 1210 is selected to connect the five on-chip connection units 1110, and the specific connection method is: the first end of the first bonding wire 1211 is connected to the second chip lead-out terminal Port2 in the first on-chip connection unit 1111, and the second end of the first bonding wire 1211 is connected to the first chip lead-out terminal Port1 in the second on-chip connection unit 1112; the first end of the second bonding wire 1212 is connected to the second chip lead-out terminal Port2 in the second on-chip connection unit 1112, and the second bonding wire 121 The second end of the third bonding wire 1213 is connected to the first chip lead-out terminal Port1 in the third on-chip connection unit 1113; the first end of the third bonding wire 1213 is connected to the second chip lead-out terminal Port2 in the third on-chip connection unit 1113, and the second end of the third bonding wire 1213 is connected to the first chip lead-out terminal Port1 in the fourth on-chip connection unit 1114; the first end of the fourth bonding wire 1214 is connected to the second chip lead-out terminal Port2 in the fourth on-chip connection unit 1114, and the second end of the fourth bonding wire 1214 is connected to the first chip lead-out terminal Port1 in the fifth on-chip connection unit 1115.

[0046] When the required on-chip inductance value is less than the current on-chip inductance value, such as Figure 4 As shown, the number of bonding wires in the off-chip bonding module can be reduced, and the connection method from 4 bonding wires to 2 bonding wires is as follows: the first end of the first bonding wire 1211 is connected to the second chip lead-out terminal Port2 in the first on-chip connection unit 1111, and the second end of the first bonding wire 1211 is connected to the first chip lead-out terminal Port1 in the third on-chip connection unit 1113; the first end of the second bonding wire 1212 is connected to the second chip lead-out terminal Port2 in the third on-chip connection unit 1113, and the second end of the second bonding wire 1212 is connected to the first chip lead-out terminal Port1 in the fifth on-chip connection unit 1115.

[0047] In detail, Figure 5 As shown, the bonding wire 1210 is arched, and there is a certain height difference between the bonding wire 1210 and the on-chip module. The inductance value of the on-chip inductor can be adjusted by changing the type of the bonding wire 1210 and increasing or decreasing the height of the bonding wire.

[0048] like Figures 1 to 11 As shown, the working principle of the highly integrated reconfigurable on-chip inductor provided by the present application is as follows:

[0049] like Figure 1 As shown, the on-chip module includes multiple on-chip connection units 1110. Corresponding bonding wires are selected according to target inductance parameters of the on-chip inductance required in the RF circuit. The on-chip connection units are connected through multiple bonding wires to obtain the required on-chip inductance.

[0050] If the target parameter of the required on-chip inductance changes, the bonding wire 1210 on the off-chip bonding module is adjusted to obtain the required on-chip inductance. Figure 3 As shown, if the current on-chip inductance is: the on-chip module includes 5 on-chip connection units 1110, and the 5 on-chip connection units 1100 are electrically connected through 4 bonding wires 1210 of the off-chip bonding module to obtain the current on-chip inductance. The 3.5nH quality factor of the current on-chip inductance is as follows Figure 6 As shown, the current on-chip inductor has an inductance value of 3.5nH. Figure 7 As shown; if the target inductance parameter of the required on-chip inductor is smaller than the inductance parameter of the current on-chip inductor, such as Figure 3 As shown, the number of bonding wires 1210 in the off-chip bonding module is reduced to reduce the inductance parameter of the current on-chip inductor. The adjusted required on-chip inductor quality factor of 1.27nH is as follows Figure 8 As shown in Figure 2, the adjusted on-chip inductance required is 1.27nH. Fig. 9 As shown; if the target inductance parameter of the required on-chip inductor is greater than the current inductance parameter, such as Figure 5 As shown, the bonding wire 1210 corresponding to the off-chip bonding module is replaced, the arch height between the bonding wire 1210 and the on-chip connection unit 1110 is increased, and the inductance parameter is improved. The adjusted required on-chip inductance 743pH quality factor is as follows Fig.10 As shown, the adjusted on-chip inductor value required is 743pH. Fig.11 shown.

[0051] It should be emphasized that if the current on-chip inductance is Figure 2 The on-chip inductor shown, that is, the on-chip module includes three on-chip connection units 1110, and two on-chip connection units 1100 are electrically connected through one bonding wire 1210 of the off-chip bonding module; if the target inductance parameter of the required on-chip inductor is smaller than the current on-chip inductor, the bonding wire 1210 in the off-chip bonding module is replaced with a bonding wire with a lower arch height to reduce the inductance parameter.

[0052] like Fig.12 As shown, the present application also provides a method for reconfiguring a highly integrated reconfigurable on-chip inductor, which is applied to the highly integrated reconfigurable on-chip inductor as described above, and the method at least includes steps S1210 to S1220:

[0053] S1210 , obtaining target inductance parameters of a required on-chip inductor.

[0054] S1220 , comparing the target inductance parameter with the current inductance parameter of the current reconfigurable on-chip inductor, and constructing the required on-chip inductor according to the comparison result.

[0055] In more detail, the target inductance parameter is compared with the inductance parameter of the current reconfigurable on-chip inductor, and the required on-chip inductor is constructed according to the comparison result, including: when the target inductance parameter is equal to the current inductance parameter, determining that the current reconfigurable on-chip inductor is the required on-chip inductor; when the target inductance parameter is greater than or less than the current inductance parameter, adjusting the off-chip bonding module to obtain the required on-chip inductor. Specifically, when the current inductance parameter of the current on-chip inductor is the target inductance parameter, it means that the on-chip inductor does not need to be adjusted, and the current on-chip inductor is the required on-chip inductor. If the target inductance parameter is not equal to the current inductance parameter, it is necessary to adjust the bonding wire 1210 connected in the off-chip inductance module 1200 to obtain the required on-chip inductor.

[0056] In more detail, before obtaining the target inductance parameters of the required on-chip inductance, it also includes: obtaining the range parameters of the reconfigurable on-chip inductance corresponding to the multiple bonding wires 1210, the range parameters including the upper inductance threshold and the lower inductance threshold; adjusting the number of bonding wires 1210 in the off-chip bonding module corresponding to different range parameters to obtain the inductance value of the relevant single bonding wire 1210. Specifically, before obtaining the target inductance parameters of the required on-chip inductor, the same on-chip module is electrically connected through multiple or single bonding wires 1210 with the same arch height, and the upper and lower inductance thresholds of the corresponding on-chip inductor are measured, and the bonding wires 1210 with other arch heights are replaced, and the above electrical connection steps and inductance value measurements are repeated to obtain the range parameters of the reconfigurable on-chip inductor composed of multiple different bonding wires, and the on-chip inductor corresponding to the upper and lower inductance thresholds of different arch heights is reduced by one bonding wire 1210, and the inductance value of the adjusted on-chip inductor is detected, and the upper and lower inductance thresholds are subtracted from the inductance value of the reduced bonding wire to obtain the inductance value of the single bonding wire of the corresponding arch height. Based on the same principle, the inductance values ​​of single bonding wires with multiple different arch heights are obtained.

[0057] In more detail, when the target inductance parameter is greater than or less than the current inductance parameter, the off-chip bonding module is adjusted to obtain the required on-chip inductance, including: if the target inductance parameter is greater than the upper limit inductance threshold corresponding to the current reconfigurable on-chip inductance or the target inductance parameter is less than the lower limit inductance threshold corresponding to the current reconfigurable on-chip inductance, a preset single bonding wire 1210 of the corresponding inductance value is selected to connect to the on-chip module to obtain the required on-chip inductance; if the target inductance parameter is greater than the current inductance parameter and less than the upper limit inductance threshold corresponding to the current reconfigurable on-chip inductance, the number of bonding wires 1210 corresponding to the current reconfigurable on-chip inductance is increased to obtain the required on-chip inductance; if the target inductance parameter is less than the current inductance parameter and greater than the lower limit inductance threshold corresponding to the current reconfigurable on-chip inductance, the number of bonding wires 1210 corresponding to the current reconfigurable on-chip inductance is reduced to obtain the required on-chip inductance.

[0058] Specifically, when the target inductance parameter is greater than the upper inductance threshold corresponding to the current reconfigurable on-chip inductance, the bonding wire 1210 in the off-chip bonding module is replaced with a bonding wire 1210 with a higher arch height to increase the inductance parameter; when the target inductance parameter is less than the lower inductance threshold corresponding to the current reconfigurable on-chip inductance, the bonding wire 1210 in the off-chip bonding module is replaced with a bonding wire 1210 with a lower arch height to reduce the inductance parameter; when the target inductance parameter is greater than the current inductance parameter and less than the upper inductance threshold corresponding to the current reconfigurable on-chip inductance, the bonding wire 1210 in the off-chip bonding module is replaced with a bonding wire 1210 with a lower arch height to reduce the inductance parameter. value, the number of relevant bonding wires 1210 in the off-chip bonding module of the current reconfigurable on-chip inductor is increased, thereby increasing the inductance parameter; if the target inductance parameter is less than the current inductance parameter and greater than the lower inductance threshold corresponding to the current reconfigurable on-chip inductor, the number of relevant bonding wires 1210 in the off-chip bonding module of the current reconfigurable on-chip inductor is reduced, thereby reducing the inductance parameter, and by judging the upper inductance threshold and the lower inductance threshold corresponding to the target inductance parameter and the current on-chip inductor, the connection state of the relevant bonding wires is adjusted to obtain the required target inductance.

[0059] In a third aspect, the present application further provides a radio frequency amplifier, in which the highly integrated reconfigurable on-chip inductor as described above is provided to facilitate adjustment of the gain factor of the radio frequency amplifier.

[0060] The present application provides a highly integrated reconfigurable on-chip inductor and a reconstruction method thereof, and a radio frequency amplifier. The on-chip inductor includes an on-chip module and an off-chip bonding module. The on-chip module includes a plurality of on-chip connection units arranged in parallel with each other. The off-chip bonding module includes bonding wires. The corresponding bonding wires are determined based on the target inductance parameters of the required on-chip inductor, and the bonding wires are electrically connected to the corresponding on-chip connection units to obtain the required on-chip inductor. When the target inductance parameters change, the on-chip inductor can be reconstructed by adjusting the bonding wires. The reconfigurable on-chip inductor provided by the present application can select the corresponding bonding wires to reconstruct the inductance of the on-chip module according to actual needs, so that the quality factor of the reconstructed inductor meets the requirements of the required inductance; the overall integration of the on-chip inductor is high, and the inductance value debugging is simpler and more flexible, which effectively shortens the research and development cycle of the radio frequency circuit, improves the performance of the radio frequency circuit, and reduces the application cost of the chip.

[0061] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the technology may modify or change the above embodiments without violating the spirit and scope of the present invention. Therefore, all equivalent modifications or changes made by a person of ordinary skill in the art without departing from the spirit and technical ideas disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A highly integrated reconfigurable on-chip inductor, characterized in that: include: An on-chip module, comprising a plurality of on-chip connection units arranged in parallel with each other; The off-chip bonding module includes bonding wires. According to the target inductance parameters of the required on-chip inductance, the corresponding bonding wires are selected to electrically connect the corresponding on-chip connection units to obtain the required on-chip inductance, so as to realize on-chip inductance reconstruction.

2. The highly integrated reconfigurable on-chip inductor according to claim 1, characterized in that: The on-chip connection unit includes two chip lead-out terminals and multiple metal wires, the first end of each metal wire is connected to the first chip lead-out terminal, the second end of each metal wire is connected to the second chip lead-out terminal, the multiple metal wires are connected in parallel, and the spacing and size of the multiple metal wires are the same.

3. The highly integrated reconfigurable on-chip inductor according to claim 2, characterized in that: The off-chip bonding module includes a single or N bonding wires. If the off-chip bonding module includes a single bonding wire, the first end of the bonding wire is connected to the second chip lead-out terminal in the first on-chip connection unit, and the second end of the bonding wire is connected to the first chip lead-out terminal in the Mth on-chip connection unit; if the off-chip bonding module includes multiple bonding wires, the first end of the first bonding wire is connected to the second chip lead-out terminal in the first on-chip connection unit, the second end of the i-th bonding wire is connected to the first chip lead-out terminal in the j-th on-chip connection unit, the first end of the i+1-th bonding wire is connected to the second chip lead-out terminal in the j-th on-chip connection unit, and the second end of the N-th bonding wire is connected to the first chip lead-out terminal in the M-th on-chip connection unit, wherein M is the number of the on-chip connection units, N is the number of the bonding wires, M, N, i, and j are positive integers, and M and N≥2, 1≤i≤N-1, and 2≤j≤M-1.

4. A method for reconfiguring a highly integrated reconfigurable on-chip inductor as claimed in any one of claims 1 to 3, characterized in that: include: Obtaining target inductance parameters of a required on-chip inductor; The target inductance parameter is compared with a current inductance parameter of a current reconfigurable on-chip inductor, and the required on-chip inductor is constructed according to the comparison result.

5. The method for reconfiguring a highly integrated reconfigurable on-chip inductor according to claim 4, characterized in that: Comparing the target inductance parameter with the inductance parameter of the current reconfigurable on-chip inductor, and constructing the required on-chip inductor according to the comparison result, including: When the target inductance parameter is equal to the current inductance parameter, determining the current reconfigurable on-chip inductance to be the required on-chip inductance; When the target inductance parameter is greater than or less than the current inductance parameter, the off-chip bonding module is adjusted to obtain the required on-chip inductance.

6. The method for reconfiguring a highly integrated reconfigurable on-chip inductor according to claim 5, characterized in that: Before obtaining the target inductance parameter of the required on-chip inductor, the method further includes: Obtaining range parameters of reconfigurable on-chip inductors corresponding to a plurality of bonding wires, wherein the range parameters include an upper inductance threshold and a lower inductance threshold; The number of bonding wires in the off-chip bonding module corresponding to different range parameters is adjusted to obtain the inductance value of the relevant single bonding wire.

7. The method for reconfiguring a highly integrated reconfigurable on-chip inductor according to claim 6, characterized in that: When the target inductance parameter is greater than or less than the current inductance parameter, adjusting the off-chip bonding module to obtain the required on-chip inductance includes: If the target inductance parameter is greater than the upper inductance threshold corresponding to the current reconfigurable on-chip inductance or the target inductance parameter is less than the lower inductance threshold corresponding to the current reconfigurable on-chip inductance, a preset single bonding wire of a corresponding inductance value is selected to connect to the on-chip module to obtain the required on-chip inductance; If the target inductance parameter is greater than the current inductance parameter and less than the upper limit inductance threshold corresponding to the current reconfigurable on-chip inductance, the number of bonding wires corresponding to the current reconfigurable on-chip inductance is increased to obtain the required on-chip inductance; If the target inductance parameter is smaller than the current inductance parameter and larger than the lower inductance threshold corresponding to the current reconfigurable on-chip inductor, the number of bonding wires corresponding to the current reconfigurable on-chip inductor is reduced to obtain the required on-chip inductor.

8. A radio frequency amplifier, characterized in that: The radio frequency amplifier includes any one of the highly integrated reconfigurable on-chip inductors as described in claims 1-3.

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