Substrate processing apparatus, substrate processing method, and substrate processing system

Abstract

In the present invention, an outer rectifying member rectifies gas passing between an upper sealing member and a lower sealing member and causes the gas to flow downward along the outer surface of the lower sealing member. As a result, a so-called air curtain is formed so as to surround the processing space. Furthermore, when the formation of the ambient gas separation space is eliminated, the outer rectifying member is attached to the upper sealing member, and the inner rectifying member, which rectifies the gas passing through the inside of the lower sealing member and circulates the gas to the processing space, is lifted integrally with the lower sealing member while being held at the fixed position. As a result, a differential pressure is generated on the outlet sides of the outer flow-regulating member and the inner flow-regulating member, and the flow rate of gas flowing downward from the outer flow-regulating member along the outer surface of the lower sealing member is increased. That is, the air curtain is strengthened.

Description

Technical Field

[0001] The present invention relates to a substrate processing technology for processing a substrate by supplying a processing liquid to the substrate.

[0002] The disclosures of the specification, drawings, and claims of the Japanese application shown below are incorporated in their entirety into the present specification by reference.

[0003] Japan Special Application No. 2022-135573 (applied on August 29, 2022). Background Art

[0004] A substrate processing device is known, which rotates a substrate such as a semiconductor wafer and supplies a processing liquid to the substrate to perform substrate processing such as a liquid treatment or a cleaning treatment. For example, in the device described in Patent Document 1, a processing liquid is supplied to a substrate held on a rotating chuck and rotated in a processing chamber. In the device, three cup members are prepared to capture and recover the processing liquid scattered from the substrate to which the processing liquid is supplied. One of the cup members rises, and its upper end abuts against the top plate of the processing chamber. Thus, a closed space (equivalent to an example of the "environmental gas separation space" of the present invention) is formed in the processing chamber. And, after the nozzle enters the closed space, the processing liquid is supplied to the substrate from the nozzle.

[0005] Prior art literature

[0006] Patent Literature

[0007] Patent Document 1: Patent No. 6282904 Summary of the invention

[0008] Problems to be solved by the invention

[0009] During the formation of the enclosed space, the space surrounded by the cup member and the outer space of the cup member are separated by the ambient gas. However, when the substrate is moved in and out of the rotary chuck, when the centering process or observation process described later, the maintenance process of the substrate processing device, etc., the cup member used to form the enclosed space is lowered to eliminate the formation of the above-mentioned separation of the ambient gas. At this time, foreign matter such as particles existing in the outer space of the cup member may flow into the rotary chuck side. Therefore, it is desired to suppress the inflow of such foreign matter.

[0010] The present invention has been made in view of the above problems, and an object of the present invention is to suppress the inflow of foreign matter into the processing space even in a state where the formation of the atmospheric separation has been eliminated, in a substrate processing apparatus that processes a substrate in a processing space separated from the atmospheric gas.

[0011] Means used to solve problems

[0012] The first aspect of the present invention is a substrate processing device, characterized in that it comprises: a chamber having an internal space; a substrate holding portion, which is arranged to hold the substrate approximately horizontally in the internal space while rotating around a rotation axis extending in a vertical direction; a rotating mechanism, which rotates the substrate holding portion around the rotation axis; a processing mechanism, which performs substrate processing on the substrate by supplying a processing liquid to the substrate held by the substrate holding portion rotated by the rotating mechanism; an anti-scattering mechanism, which surrounds the outer periphery of the substrate and captures and discharges the processing liquid scattered from the substrate accompanying the rotation of the substrate holding portion; a gas supply portion, which supplies gas to the internal space from a first opening provided in the top wall of the chamber; an ambient gas separation mechanism, which has a cylindrical upper sealing member mounted on the top wall in a manner surrounding the entire first opening from the internal space side, and a cylindrical lower sealing member arranged to move in the vertical direction while having its outer peripheral surface overlapped with the inner peripheral surface of the upper sealing member in the vertical direction, and the structure The invention relates to a processing space which is surrounded by a free anti-scattering mechanism and is surrounded by a lower sealing member and an upper sealing member, and is surrounded by a central part of the first opening to form an environmental gas separation space separated from the surroundings; an outer rectifying member, which is installed on the upper sealing member in a manner that rectifyes the gas passing through between the upper sealing member and the lower sealing member and causes the gas to flow downward along the outer side surface of the lower sealing member; an inner rectifying member, which is arranged to be freely raised and lowered as a whole with the lower sealing member in a manner that rectifyes the gas passing through the inner side of the lower sealing member and causes the gas to flow to the processing space; a lifting mechanism, which lifts the lower sealing member; and a control unit, which controls the lifting mechanism as follows: the environmental gas separation space is formed by lowering the lower sealing member in the vertical direction to a specified lower limit position, and on the other hand, the flow rate of the gas that can enter and exit relative to the processing space and flow downward along the outer side surface of the lower sealing member is controlled by raising the lower sealing member to a retreat position vertically above the lower limit position.

[0013] In addition, a second aspect of the present invention is a substrate processing method, characterized in that a substrate processing is performed on a substrate by supplying a processing liquid to a substrate while the outer circumference of a rotating substrate surrounded by an anti-scattering mechanism in an internal space of a chamber in which a gas is supplied through a first opening provided on a top wall of the chamber, and the method comprises: a first step of vertically overlapping an outer circumferential surface of a lower sealing member having a cylindrical shape with an inner circumferential surface of an upper sealing member having a cylindrical shape mounted on the top wall in a manner surrounding the entire first opening from the internal space side, while lowering the upper sealing member in the vertical direction to a prescribed lower limit position, thereby surrounding a processing space surrounded by the free anti-scattering mechanism toward a space in the center of the first opening to form an ambient gas separation space separated from the surroundings; and a second step of vertically overlapping an outer circumferential surface of a lower sealing member having a cylindrical shape with an inner circumferential surface of an upper sealing member having a cylindrical shape mounted on the top wall in a manner surrounding the entire first opening from the internal space side; and The lower sealed member rises to a retreat position vertically above the lower limit position, thereby eliminating the formation of the environmental gas separation space and forming a gap between the lower sealed member and the anti-scattering mechanism in the vertical direction; and the first step includes the following steps: rectifying the gas passing through the upper sealed member and the lower sealed member by an outer rectifying member installed on the upper sealed member and causing the gas to flow downward along the outer side surface of the lower sealed member, and rectifying the gas passing through the inner side of the lower sealed member by an inner rectifying member that is movably arranged integrally with the lower sealed member and causing the gas to flow to the processing space; the second step includes the following steps: as the inner rectifying member rises integrally with the lower sealed member, the flow rate of the gas flowing downward along the outer side surface of the lower sealed member is increased compared with the first step.

[0014] Furthermore, the third embodiment of the present invention is a substrate processing system, characterized in that it comprises: a plurality of the above-mentioned substrate processing devices; and an exhaust device, which exhausts a plurality of internal spaces at the same time by being connected in parallel with the plurality of substrate processing devices; and each of the plurality of substrate processing devices comprises: a first exhaust pipe, which connects the processing space with the exhaust device; a second exhaust pipe, which connects the space in the internal space other than the processing space with the exhaust device; and an exhaust flow adjustment unit, which can adjust the ratio of a first exhaust flow exhausted through the first exhaust pipe and a second exhaust flow exhausted through the second exhaust pipe; and the control unit controls the exhaust flow adjustment unit as follows: when the lower sealing member is located at the lower limit position, the ratio of the first exhaust flow is increased, and on the other hand, when the lower sealing member is located at the retreat position, the ratio of the second exhaust flow is increased, thereby making the exhaust flow rate per unit time discharged from the internal space by the exhaust device approximately constant.

[0015] In the invention thus constituted, under the state that the outer peripheral surface of the lower enclosed member overlaps with the inner peripheral surface of the upper enclosed member installed on the top wall in the vertical direction, when the lower enclosed member drops to the specified lower limit position, the space of the central part of the self-processing space toward the 1st opening is surrounded and the ambient gas separation space separated from the surrounding is formed. On the other hand, when the lower enclosed member rises to the retreat position above the vertical position relative to the lower limit position, the formation of the ambient gas separation space is eliminated and a gap is formed between the lower enclosed member and the anti-scattering mechanism in the vertical direction. At this time, there is a worry that foreign matter flows into the processing space. However, in the present invention, the external rectifying member rectify the gas passing between the upper enclosed member and the lower enclosed member and circulates the gas along the outer side of the lower enclosed member toward the bottom. Thus, in the mode of surrounding the processing space, a so-called air curtain is formed. Furthermore, when the formation of the environmental gas separation space is eliminated, the external rectifying member is installed on the upper closed member and remains stopped in a fixed position. In contrast, the inner rectifying member and the lower closed member are lifted and lowered as a whole for rectifying the gas passing through the inner side of the lower closed member and making the gas flow to the processing space. Thus, a differential pressure is generated on the outlet side of the outer rectifying member and the inner rectifying member, and the flow rate of the gas flowing downward from the outer rectifying member along the outer side of the lower closed member increases. That is, the flow rate of the gas constituting the air curtain is increased, and the barrier performance that prevents foreign matter from flowing in is improved. As a result, the air curtain is more effectively used to suppress the flow of foreign matter into the processing space.

[0016] Effects of the Invention

[0017] According to the present invention, not only can foreign matter be prevented from flowing into the processing space when substrate processing is performed in the processing space after the ambient gas separation, but also the flow of foreign matter into the processing space can be effectively suppressed even in a state where the formation of the ambient gas separation has been eliminated.

[0018] The multiple components of each mode of the present invention described above are not all necessary. In order to solve part or all of the above-mentioned problems, or to achieve part or all of the effects described in this specification, some of the multiple components described above can be appropriately changed, deleted, replaced with new other components, or part of the limited content can be deleted. In addition, in order to solve part or all of the above-mentioned problems, or to achieve part or all of the effects described in this specification, part or all of the technical features included in one mode of the present invention described above can also be combined with part or all of the technical features included in another mode of the present invention described above to form an independent mode of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 It is a plan view showing a schematic configuration of a substrate processing system including a substrate processing apparatus according to a first embodiment of the present invention.

[0020] Figure 2 It is a diagram schematically showing the configuration of a processing block.

[0021] Figure 3 It is a diagram showing the structure of a first embodiment of a substrate processing apparatus according to the present invention.

[0022] Figure 4 It is a diagram schematically showing the structure of the chamber and the structure attached to the chamber.

[0023] Figure 5 It is a plan view schematically showing the structure of a substrate processing unit provided on a base member.

[0024] Figure 6 It is a perspective view showing the structure of the rotation holding mechanism.

[0025] Figure 7 It is a figure which shows the dimensional relationship between the substrate held by the spin chuck and the spin cup part.

[0026] Fig. 8A It is a diagram schematically showing the state of each part of the device during bevel processing.

[0027] Figure 8B It is a diagram schematically showing the state of each part of the device during the shutter opening process.

[0028] Figure 8C It is a diagram schematically showing the state of each part of the device when the substrate is transported.

[0029] Fig.8D It is a diagram schematically showing the states of each part of the device during the centering process and the observation process.

[0030] Fig. 9 This is a diagram schematically showing the structure and operation of the centering mechanism.

[0031] Fig.10 It is a perspective view showing an observation head of the substrate observation mechanism.

[0032] Fig.11 yes Fig.10 The exploded assembly perspective view of the viewing head is shown.

[0033] Fig.12 Yes means through Figure 3 The illustrated substrate processing apparatus executes a flow chart of a bevel processing as an example of a substrate processing operation.

[0034] Fig.13 The diagram shows the state of each part of the apparatus in each state of the substrate processing operation.

[0035] Fig.14 The diagrams show the states of each part of the device in each state of the maintenance process.

[0036] Fig.15A It is a diagram schematically showing the state of each part of the device during the first maintenance process.

[0037] Fig. 15B It is a diagram schematically showing the state of each part of the device during the second maintenance process.

[0038] Fig. 15C It is a diagram schematically showing the state of each part of the device during the third maintenance process. DETAILED DESCRIPTION

[0039] Figure 1 It is a plan view showing a schematic configuration of a substrate processing system including a substrate processing apparatus according to a first embodiment of the present invention. Figure 1 It is not a diagram showing the appearance of the substrate processing system 100, but a schematic diagram showing its internal structure in an easily understandable manner by excluding the outer wall panel or other part of the substrate processing system 100. The substrate processing system 100 is, for example, a single-chip device that is arranged in a clean room and processes substrates W having a circuit pattern or the like (hereinafter referred to as "pattern") formed only on one main surface one by one. In addition, in the processing unit 1 equipped in the substrate processing system 100, substrate processing of the processing liquid is performed. In this specification, the pattern forming surface (one main surface) on which a pattern is formed on the two main surfaces of the substrate is referred to as the "front side", and the other main surface on the opposite side where the pattern is not formed is referred to as the "back side". In addition, the surface facing downward is referred to as the "lower surface", and the surface facing upward is referred to as the "upper surface". In addition, in this specification, the "pattern forming surface" means a surface on which a concave-convex pattern is formed in any area of ​​the substrate.

[0040] Here, as the "substrate" in this embodiment, various substrates such as semiconductor wafers, glass substrates for photomasks, glass substrates for liquid crystal displays, glass substrates for plasma displays, substrates for FED (Field Emission Display), substrates for optical disks, substrates for magnetic disks, and substrates for magneto-optical disks can be applied. Hereinafter, a substrate processing apparatus for processing semiconductor wafers is mainly used as an example and described with reference to the accompanying drawings, but the same can also be applied to the processing of various substrates exemplified above.

[0041] like Figure 1As shown, the substrate processing system 100 has a substrate processing area 110 for processing substrates W. A carrier 120 is provided adjacent to the substrate processing area 110. The carrier 120 has a container holding part 121 that can hold a plurality of containers C for storing substrates W (FOUP (Front Opening Unified Pod: front opening wafer cassette, SMIF (Standard Mechanical Interface) cassette, OC (Open Cassette: open wafer cassette) and the like for storing a plurality of substrates W in a sealed state). In addition, the carrier 120 has a carrier robot 122, which is used to enter and exit the container C held in the container holding part 121, take out an unprocessed substrate W from the container C, or store a processed substrate W in the container C. In each container C, a plurality of substrates W are stored in a substantially horizontal posture.

[0042] The carrier robot 122 includes a base portion 122a fixed to the device housing, a multi-joint arm 122b arranged to be rotatable around a vertical axis relative to the base portion 122a, and a hand 122c mounted on the top of the multi-joint arm 122b. The hand 122c is a structure that can place and hold the substrate W on its upper surface. Since the carrier robot having such a multi-joint arm and a hand for holding the substrate is well known, a detailed description thereof is omitted.

[0043] In the substrate processing area 110, a loading table 112 is provided to load a substrate W from a transfer robot 122. In addition, in a plan view, a substrate transfer robot 111 is arranged substantially in the center of the substrate processing area 110. Furthermore, a plurality of processing blocks 1B are arranged so as to surround the substrate transfer robot 111. Specifically, four processing blocks 1B are arranged facing the space where the substrate transfer robot 111 is arranged.

[0044] Figure 2 1 is a diagram schematically showing the structure of a processing block. Each processing block 1B has a plurality of (six in this embodiment) processing units 1 and an exhaust device 130. The six processing units 1 are stacked in the vertical direction Z, and the exhaust device 130 is arranged above the processing unit 1 located at the uppermost side (the unit indicated by the reference numeral 1a in the figure). In addition, each processing unit 1 is connected to the exhaust device 130 in parallel via a common pipe 131. Therefore, a maximum of six processing units 1 are exhausted at the same time. In this way, the floor space occupied by the processing units 1 in the substrate processing system 100 can be reduced by stacking a plurality of processing units 1 and the exhaust device 130.

[0045] In the processing unit 1 thus constructed, the substrate transport robot 111 randomly enters and exits the loading platform 112, and transfers the substrate W between the loading platform 112. On the other hand, each processing unit 1 performs a prescribed process on the substrate W, which is equivalent to the substrate processing device of the present invention. In the present embodiment, these processing units (substrate processing devices) 1 have the same function. Therefore, multiple substrates W can be processed in parallel. In addition, if the substrate transport robot 111 can directly transfer the substrate W to the carrier robot 122, the loading platform 112 is not necessarily required.

[0046] Figure 3 1 is a diagram showing the structure of a first embodiment of a substrate processing apparatus according to the present invention. Figure 4 FIG. 2 is a diagram schematically showing the structure of a chamber and the structure installed in the chamber. Figure 3 , Figure 4 In the drawings and the following references, the size or quantity of each part may be exaggerated or simplified for ease of understanding. Figure 4 As shown, the chamber 11 used in the substrate processing device (processing unit) 1 has a bottom wall 11a in a rectangular shape when viewed from vertically above, four side walls 11b to 11e erected around the bottom wall 11a, and a top wall 11f covering the upper ends of the side walls 11b to 11e. The bottom wall 11a, the side walls 11b to 11e, and the top wall 11f are combined to form an internal space 12 in a substantially rectangular parallelepiped shape.

[0047] On the upper surface of the bottom wall 11a, base support members 16, 16 are spaced apart from each other and fixed by bolts or other fastening members. That is, the base support members 16 are erected from the bottom wall 11a. The base member 17 is fixed to the upper ends of these base support members 16, 16 by bolts or other fastening members. The base member 17 is composed of a plate material having a smaller plane size than the bottom wall 11a and a thicker thickness than the bottom wall 11a and having high rigidity. Figure 3 As shown, the base member 17 is lifted vertically upward from the bottom wall 11a by the base support members 16, 16. That is, a so-called high bottom plate structure is formed at the bottom of the internal space 12 of the chamber 11. As described in detail later, the upper surface of the base member 17 is processed to be able to set a substrate processing part SP for performing substrate processing on the substrate W, and the substrate processing part SP is set on the upper surface. The various parts constituting the substrate processing part SP are electrically connected to the control unit 10 that controls the entire device, and operate according to the instructions from the control unit 10. In addition, the shape of the base member 17, the structure or operation of the substrate processing part SP will be described in detail later.

[0048] like Figure 3 and Figure 4As shown, a fan filter unit (FFU: Fan Filter Unit) 13 is installed on the top wall 11f of the chamber 11. The fan filter unit 13 further purifies the air in the clean room where the substrate processing device 1 is installed, and supplies it to the internal space 12 in the chamber 11. The fan filter unit 13 is equipped with a fan and a filter (such as a HEPA (High Efficiency Particulate Air: High Efficiency Particulate Air) filter) for extracting the air in the clean room and sending it to the chamber 11, and the clean air is sent in through the opening 11f1 provided on the top wall 11f. As a result, a downward flow of clean air is formed in the internal space 12 in the chamber 11. In addition, in order to evenly disperse the clean air supplied from the fan filter unit 13, two types of punching plates with a plurality of blowing holes are provided directly below the top wall 11f, serving as an inner rectifying member 14a and an outer rectifying member 14b, respectively. The inner rectifying member 14a is mounted on a lower sealed cup member 61 to be described later, and moves integrally with the lower sealed cup member 61 in the vertical direction Z. The outer rectifying member 14b is mounted on an upper sealed cup member 62 to be described later, and is fixedly arranged at a constant height position in the vertical direction Z. The detailed configuration and function of the inner rectifying member 14a and the outer rectifying member 14b will be described later.

[0049] like Figure 4 As shown, in the substrate processing apparatus 1, a transfer opening 11b1 is provided on the side wall 11b that is opposite to the substrate transfer robot 111 among the four side walls 11b to 11e, so that the internal space 12 is connected to the outside of the chamber 11. Therefore, the hand (not shown) of the substrate transfer robot 111 can enter and exit the substrate processing unit SP through the transfer opening 11b1. That is, by providing the transfer opening 11b1, the substrate W can be transferred in and out of the internal space 12. In addition, a baffle 15 for opening and closing the transfer opening 11b1 is installed on the side wall 11b.

[0050] The shutter 15 is connected to a shutter opening and closing mechanism (not shown), and the shutter 15 is opened and closed according to the opening and closing command from the control unit 10. More specifically, in the substrate processing apparatus 1, when an unprocessed substrate W is carried into the chamber 11, the shutter opening and closing mechanism opens the shutter 15, and the unprocessed substrate W is carried into the substrate processing section SP in a face-up posture by the hand of the substrate transport robot 111. That is, the substrate W is placed on the spin chuck ( Figure 621 in the figure). Furthermore, when the hand of the substrate transport robot 111 withdraws from the chamber 11 after the substrate is moved in, the baffle opening and closing mechanism closes the baffle 15. Furthermore, in the processing space of the chamber 11 (equivalent to the enclosed space 12a described in detail later), the substrate processing unit SP performs a bevel treatment on the peripheral edge Ws of the substrate W as an example of "substrate treatment" of the present invention. In addition, after the bevel treatment is completed, the baffle opening and closing mechanism opens the baffle 15 again, and the hand of the substrate transport robot 111 moves the processed substrate W out of the substrate processing unit SP. In this way, in the present embodiment, the internal space 12 of the chamber 11 maintains a normal temperature environment. In addition, in this specification, "normal temperature" means a temperature range of 5°C to 35°C.

[0051] like Figure 4 As shown, the side wall 11d is provided on the base member 17 between the substrate processing portion SP ( Figure 3 ) is located on the opposite side of the side wall 11b. The side wall 11d is provided with a maintenance opening 11d1. During maintenance, as shown in the figure, the maintenance opening 11d1 is opened. Therefore, an operator can enter and exit the substrate processing unit SP from the outside of the device through the maintenance opening 11d1. On the other hand, during substrate processing, the cover member 19 is installed in a manner that closes the maintenance opening 11d1. In this way, in the present embodiment, the cover member 19 is freely attachable and detachable to the side wall 11d.

[0052] Furthermore, a heating gas supply unit 47 for supplying heated inert gas (nitrogen gas in this embodiment) to the substrate processing portion SP is installed on the outer surface of the side wall 11e. The heating gas supply unit 47 has a heater 471 built therein.

[0053] Thus, the baffle plate 15, the cover member 19 and the heating gas supply unit 47 are arranged on the outer wall side of the chamber 11. On the other hand, the substrate processing unit SP is arranged on the upper surface of the base member 17 of the high bottom plate structure in the inner side of the chamber 11, that is, the internal space 12. Figure 3 , Figure 5-Figure 7 , Figure 8A-8C , Figure 9-11 , the structure of the substrate processing part SP is described.

[0054] Figure 5 : is a top view schematically showing the structure of the substrate processing unit installed on the base member. In order to clarify the configuration relationship or operation of each part of the device, the coordinate system with the Z direction as the vertical direction and the XY plane as the horizontal plane is appropriately marked. Figure 5In the coordinate system, the horizontal direction parallel to the transport path TP of the substrate W is referred to as the “X direction”, and the horizontal direction perpendicular thereto is referred to as the “Y direction”. More specifically, the directions from the internal space 12 of the chamber 11 toward the transport opening 11b1 and the maintenance opening 11d1 are referred to as the “+X direction” and the “−X direction”, respectively, the directions from the internal space 12 of the chamber 11 toward the side walls 11c and 11e are referred to as the “−Y direction” and the “+Y direction”, respectively, and the directions toward the vertically upward and vertically downward are referred to as the “+Z direction” and the “−Z direction”, respectively.

[0055] The substrate processing part SP includes a holding and rotating mechanism 2, an anti-scattering mechanism 3, an upper surface protection and heating mechanism 4, a processing mechanism 5, an atmosphere separation mechanism 6, a lifting mechanism 7, a centering mechanism 8, and a substrate observation mechanism 9. These mechanisms are provided on a base member 17. That is, the holding and rotating mechanism 2, the anti-scattering mechanism 3, the upper surface protection and heating mechanism 4, the processing mechanism 5, the atmosphere separation mechanism 6, the lifting mechanism 7, the centering mechanism 8, and the substrate observation mechanism 9 are arranged in a predetermined positional relationship with respect to the base member 17 having a higher rigidity than the chamber 11.

[0056] Figure 6 2 is a perspective view showing the structure of the holding and rotating mechanism. The holding and rotating mechanism 2 includes: a substrate holding portion 2A that holds the substrate W in a substantially horizontal position with the front surface of the substrate W facing upward; and a rotating mechanism 2B that rotates the substrate holding portion 2A holding the substrate W and a part of the anti-scattering mechanism 3 synchronously. Therefore, when the rotating mechanism 2B is operated according to the rotation command from the control unit 10, the substrate W and the rotating cup portion 31 of the anti-scattering mechanism 3 rotate around the rotation axis AX extending parallel to the vertical direction Z.

[0057] The substrate holding portion 2A includes a disk-shaped member smaller than the substrate W, namely a rotating chuck 21. The rotating chuck 21 is arranged so that its upper surface is substantially horizontal and its central axis coincides with the rotation axis AX. Figure 5 As shown in the figure, the center of the substrate holding part 2A (equivalent to the center axis of the rotation chuck 21) is offset in the (+X) direction relative to the center 11g of the chamber 11. That is, the substrate holding part 2A is configured so that, when viewed from above the chamber 11, the center axis (rotation axis AX) of the rotation chuck 21 is located at a processing position offset by a distance Lof from the center 11g of the internal space 12 toward the transport opening 11b1. In addition, in order to clarify the configuration relationship of each part of the device described later, in this specification, the imaginary line passing through the center (rotation axis AX) of the offset substrate holding part 2A and being orthogonal to the transport path TP and the imaginary line parallel to the transport path TP are referred to as the "first imaginary horizontal line VL1" and the "second imaginary horizontal line VL2", respectively.

[0058] like Figure 6As shown in FIG. 1 , a cylindrical rotating shaft portion 22 is connected to the lower surface of the spin chuck 21 . The rotating shaft portion 22 is extended in the vertical direction Z with its axis aligned with the rotation axis AX. In addition, the rotating mechanism 2B is connected to the rotating shaft portion 22 .

[0059] The rotating mechanism 2B includes a motor 23 for generating a rotational driving force for rotating the substrate holding portion 2A and the rotating cup portion 31 of the anti-scattering mechanism 3, and a power transmission portion 24 for transmitting the rotational driving force. The motor 23 includes a rotating shaft 231 that rotates as the rotational driving force is generated. The rotating shaft 231 is provided at the motor mounting portion 171 of the base member 17 in a posture extending vertically downward. More specifically, as Figure 4 As shown, the motor mounting portion 171 is a portion that is cut away along the (+X) direction while facing the maintenance opening 11d1 on one side. The cut away width (dimension in the Y direction) of the motor mounting portion 171 is substantially the same as the width in the Y direction of the motor 23. Therefore, the motor 23 can freely move along the X direction while engaging its side surface with the motor mounting portion 171.

[0060] In the motor mounting portion 171, in order to position the motor 23 in the X direction and fix it to the base member 17, the motor fixing metal member 232 is connected to the base member 17 by a fastening member 233 such as a bolt or a screw. Figure 6 As shown, the motor fixing metal member 232 has a horizontal portion 2321 and a vertical portion 2322, and has a substantially L-shape when viewed from the (+Y) direction. Figure 6 , but a through hole for inserting the rotating shaft 231 is provided in the central part of the horizontal part 2321 of the motor fixing metal fitting 232. When the rotating shaft 231 is inserted into the through hole in a vertical downward direction, the horizontal part 2321 supports the motor 23. In addition, the vertical part 2322 is configured to engage with the motor 23 supported from below by the horizontal part 2321. In the vertical part 2322, two fastening members 234 such as bolts or screws are installed in the Y direction at intervals from each other. The top end portion of each fastening member 234 passes through the vertical part 2322 and extends in the (+X) direction, and each top end portion is screwed with the motor mounting part 171. Therefore, by the operator rotating the fastening member 234 forward or reversely, the motor fixing metal fitting 232 moves in the X direction while maintaining the state of supporting the motor 23. In this way, the motor 23 can be positioned in the X direction. Furthermore, after positioning, the operator rotates the fastening member 233 in the forward direction, so that the motor 23 and the motor mounting portion 171 are firmly fixed to the base member 17 as a whole.

[0061] A first pulley 241 is mounted on the top end of the rotating shaft 231 protruding downward from the base member 17. In addition, a second pulley 242 is mounted on the lower end of the substrate holding portion 2A. In more detail, the lower end of the substrate holding portion 2A is inserted into a through hole of a rotating chuck mounting portion 172 provided on the base member 17, and protrudes downward from the base member 17. The second pulley 242 is provided on the protruding portion. And, an endless belt 243 is arranged between the first pulley 241 and the second pulley 242. In this way, in the present embodiment, the power transmission portion 24 is composed of the first pulley 241, the second pulley 242 and the endless belt 243.

[0062] When using the power transmission unit 24 having such a structure, a long timing belt can be selected as the endless belt 243, and the life of the endless belt 243 can be prolonged. However, it is necessary to perform maintenance work such as adjusting the interval between the first pulley 241 and the second pulley 242 or replacing the endless belt 243 by moving the motor 23 in the X direction. Figure 5 As shown in FIG. 1 , when viewed from above the chamber 11, the transfer opening 11b1, the substrate holding portion 2A, the power transmission portion 24, the motor 23, and the maintenance opening 11d1 are arranged in this order along the second virtual horizontal line VL2 and in a straight line. That is, the power transmission portion 24 and the motor 23 are arranged so as to face the maintenance opening 11d1. Therefore, when the cover member 19 is removed from the chamber 11 and the maintenance opening 11d1 is opened, the power transmission portion 24 and the motor 23 are exposed to the outside through the maintenance opening 11d1. As a result, the operator's maintenance process becomes easy, and the efficiency of the maintenance work can be improved.

[0063] Furthermore, other mechanisms described below are arranged above the base member 17, whereas the power transmission unit 24 is arranged below the base member 17. By adopting such an arrangement, the operator can perform maintenance work more efficiently without having to consider interference with other mechanisms.

[0064] like Figure 6As shown, a through hole 211 is provided in the central portion of the rotary chuck 21, which is connected to the internal space of the rotary shaft portion 22. In the internal space, a pump 26 is connected via a pipe 25 equipped with a valve (not shown). The pump 26 and the valve are electrically connected to the control unit 10, and operate according to the command from the control unit 10. Thus, negative pressure and positive pressure are selectively applied to the rotary chuck 21. For example, when the pump 26 applies negative pressure to the rotary chuck 21 in a state where the substrate W is placed on the upper surface of the rotary chuck 21 in a roughly horizontal posture, the rotary chuck 21 adsorbs and holds the substrate W from below. On the other hand, when the pump 26 applies positive pressure to the rotary chuck 21, the substrate W can be removed from the upper surface of the rotary chuck 21. In addition, when the suction of the pump 26 is stopped, the substrate W can move horizontally on the upper surface of the rotary chuck 21.

[0065] In the spin chuck 21, a nitrogen supply unit 29 is connected via a pipe 28 provided in the central portion of the rotating shaft portion 22. The nitrogen supply unit 29 delivers room temperature nitrogen supplied from equipment in a factory where the substrate processing system 100 is provided to the spin chuck 21 at a flow rate and timing corresponding to the gas supply instruction from the control unit 10, and allows nitrogen to flow from the central portion to the radially outer side on the lower surface Wb side of the substrate W. In addition, in this embodiment, nitrogen is used, but other inactive gases may also be used. In this regard, the same applies to the heating gas ejected from the central nozzle described later. In addition, "flow rate" means the amount of fluid such as nitrogen that moves per unit time.

[0066] The rotating mechanism 2B not only rotates the spin chuck 21 and the substrate W integrally, but also has a power transmission unit 27 ( Figure 3 The power transmission unit 27 has a circular ring member 27a ( Figure 6 ), a rotating chuck side magnet (not shown) built into the annular member, and a cup side magnet (not shown) built into the lower cup 32, which is a component of the rotating cup portion 31. The annular member 27a is as shown in FIG. Figure 6 The rotating shaft portion 22 is mounted on the rotating shaft portion 22 and can rotate around the rotating axis AX together with the rotating shaft portion 22. More specifically, the rotating shaft portion 22 is as shown in FIG. Figure 3 and Figure 6 As shown, a flange portion extending radially outward is provided just below the spin chuck 21. A circular ring member 27a is concentrically arranged on the flange portion and is fastened and fixed by bolts or the like (not shown).

[0067] On the outer peripheral edge of the annular member 27a, a plurality of rotating chuck side magnets are arranged radially with the rotating axis AX as the center and at equal angles. In the present embodiment, one of the two rotating chuck side magnets adjacent to each other is arranged so that the outer side and the inner side are respectively N poles and S poles, and the other is arranged so that the outer side and the inner side are respectively S poles and N poles.

[0068] Similar to these rotating chuck side magnets, a plurality of cup side magnets are arranged radially and at equal angles around the rotating axis AX. These cup side magnets are built into the lower cup 32. The lower cup 32 is a component of the anti-scattering mechanism 3 described below, and has a circular ring shape. That is, the lower cup 32 has an inner peripheral surface that can face the outer peripheral surface of the circular ring member 27a. The inner diameter of the inner peripheral surface is larger than the outer diameter of the circular ring member 27a. And, while the inner peripheral surface is opposed to the outer peripheral surface of the circular ring member 27a at a predetermined interval (= (the above inner diameter - the above outer diameter) / 2), the lower cup 32 is arranged concentrically with the rotating shaft portion 22 and the circular ring member 27a. A locking pin and a connecting magnet are provided on the upper surface of the outer peripheral edge of the lower cup 32, whereby the upper cup 33 is connected to the lower cup 32, and the connection body functions as a rotating cup portion 31.

[0069] The lower cup 32 is supported on the upper surface of the base member 17 by a bearing which is omitted in the drawings so as to be rotatable around the rotation axis AX while maintaining the above-mentioned configuration. As described above, the cup side magnets are arranged radially and at equal angles around the rotation axis AX as the center on the inner peripheral edge of the lower cup 32. In addition, the configuration of the two cup side magnets adjacent to each other is the same as that of the rotating chuck side magnets. That is, in one, the outer side and the inner side are arranged in a manner that the N pole and the S pole are respectively formed, and in the other, the outer side and the inner side are arranged in a manner that the S pole and the N pole are respectively formed.

[0070] In the power transmission part 27 thus constructed, when the annular member 27a rotates together with the rotating shaft part 22 through the motor 23, the lower cup 32 maintains the air gap (the gap between the annular member 27a and the lower cup 32) and rotates in the same direction as the annular member 27a due to the magnetic force between the rotating chuck side magnet and the cup side magnet. As a result, the rotating cup part 31 rotates around the rotating axis AX. That is, the rotating cup part 31 and the substrate W rotate in the same direction and synchronously.

[0071] The anti-scattering mechanism 3 includes a rotating cup portion 31 that can rotate around the rotation axis AX while surrounding the outer circumference of the substrate W held on the spin chuck 21, and a fixed cup portion 34 that is fixedly provided in a manner to surround the rotating cup portion 31. The rotating cup portion 31 is provided so as to rotate around the rotation axis AX while surrounding the outer circumference of the rotating substrate W by connecting the upper cup 33 to the lower cup 32.

[0072] Figure 7It is a figure which shows the dimensional relationship between the substrate held by the spin chuck and the spin cup part. Fig. 8A It is a diagram schematically showing the state of each part of the device during bevel processing. Figure 8B It is a diagram schematically showing the state of each part of the device during the shutter opening process. Figure 8C It is a diagram schematically showing the state of each part of the device when the substrate is transported. Fig.8D Schematically showing the states of various parts of the device during centering and observation. FIG. 8A to FIG. 8D (and the following description FIG. 15A to FIG. 15C ) in the mark indicating the opening and closing valve, the black triangular part indicates the valve is open, and the white triangular part indicates the valve is closed. The lower cup 32 has a ring shape. Its outer diameter is larger than the outer diameter of the substrate W. When viewed from vertically above, the lower cup 32 is configured to rotate freely around the rotation axis AX when the substrate W held by the free rotating chuck 21 is extended in the radial direction. In the extended area, that is, the peripheral edge of the upper surface of the lower cup 32, engaging pins (not shown) and flat lower magnets (not shown) that are arranged vertically upward in the circumferential direction are alternately installed.

[0073] On the other hand, Figure 3 , Figure 4 and Figure 7 As shown, the upper cup 33 has a lower annular portion 331, an upper annular portion 332, and an inclined portion 333 connecting them. The outer diameter D331 of the lower annular portion 331 is the same as the outer diameter D32 of the lower cup 32, and the lower annular portion 331 is located vertically above the peripheral edge portion 321 of the lower cup 32. On the lower surface of the lower annular portion 331, in the area vertically above the engaging pin, a recessed portion opening downward is provided so as to be engageable with the top end portion of the engaging pin. In addition, an upper magnet is installed in the area vertically above the lower magnet. Therefore, when the recessed portion and the upper magnet are respectively opposite to the engaging pin and the lower magnet, the upper cup 33 can be engaged with and disengaged from the lower cup 32.

[0074] The upper cup 33 can be raised and lowered in the vertical direction by the lifting mechanism 7. When the upper cup 33 is moved upward by the lifting mechanism 7, a conveying space for carrying in and out the substrate W is formed between the upper cup 33 and the lower cup 32 in the vertical direction. On the other hand, when the upper cup 33 is moved downward by the lifting mechanism 7, the recess is engaged in a manner covering the top end of the locking pin, thereby positioning the upper cup 33 relative to the lower cup 32 in the horizontal direction. In addition, the upper magnet approaches the lower magnet, and the upper cup 33 and the lower cup 32 after the above positioning are combined with each other by the gravitational force generated therebetween. As a result, Figure 58, the upper cup 33 and the lower cup 32 are integrated in the vertical direction with a gap GPc extending in the horizontal direction. In addition, the rotating cup portion 31 is freely rotatable around the rotation axis AX while maintaining the gap GPc.

[0075] In the rotating cup portion 31, as Figure 7 As shown in FIG. 8 , the outer diameter D332 of the upper annular portion 332 is slightly smaller than the outer diameter D331 of the lower annular portion 331. In addition, if the diameters d331 and d332 of the inner circumferences of the lower annular portion 331 and the upper annular portion 332 are compared, the lower annular portion 331 is larger than the upper annular portion 332, and when viewed from above vertically, the inner circumference of the upper annular portion 332 is located inside the inner circumference of the lower annular portion 331. Furthermore, the inner circumference of the upper annular portion 332 and the inner circumference of the lower annular portion 331 are connected by the inclined portion 333 over the entire circumference of the upper cup 33. Therefore, the inner circumference of the inclined portion 333, that is, the surface surrounding the substrate W becomes an inclined surface 334. That is, as shown in FIG. 8 , the inclined portion 333 can surround the outer circumference of the rotating substrate W to form a processing space for performing an inclined surface treatment, and can capture droplets scattered from the substrate W. The space surrounded by the upper cup 33 and the lower cup 32 functions as a processing space SPc.

[0076] Furthermore, the inclined portion 333 facing the processing space SPc is inclined from the lower annular portion 331 toward the upper portion of the peripheral portion of the substrate W. Therefore, the droplets captured in the inclined portion 333 can flow along the inclined surface 334 to the lower end portion of the upper cup 33, that is, the lower annular portion 331, and then be discharged to the outside of the rotating cup portion 31 through the gap GPc.

[0077] The fixed cup portion 34 is arranged in a manner to surround the rotating cup portion 31, forming a discharge space SPe. The fixed cup portion 34 has a liquid receiving portion 341 and an exhaust portion 342 arranged on the inner side of the liquid receiving portion 341. The liquid receiving portion 341 has a cup structure that is opened in a manner to open on the anti-substrate side facing the gap GPc. That is, the internal space of the liquid receiving portion 341 functions as the discharge space SPe, and is connected to the processing space SPc through the gap GPc. Therefore, the droplets captured by the rotating cup portion 31 are guided to the discharge space SPe through the gap GPc together with the gas components. Then, the droplets gather at the bottom of the liquid receiving portion 341 and are discharged from the fixed cup portion 34.

[0078] On the other hand, the gas components gather at the exhaust part 342. The exhaust part 342 is separated from the liquid receiving part 341 by a partition wall 343. In addition, a gas guide 344 is arranged above the partition wall 343. The gas guide 344 extends from the position directly above the partition wall 343 to the inside of the exhaust space SPe and the exhaust part 342, thereby covering the partition wall 343 from above to form a flow path of the gas component having a labyrinth structure. Therefore, the gas components in the fluid flowing into the liquid receiving part 341 are gathered at the exhaust part 342 via the above-mentioned flow path. The exhaust part 342 is connected to the exhaust device 130 via the first exhaust pipe 381, the damper 383 and the opening and closing valve 384. In addition, the internal space 12 of the chamber 11 is connected to the exhaust device 130 via the second exhaust pipe 382, ​​the damper 383 and the opening and closing valve 384. Therefore, by adjusting the opening of the damper 383 according to the command from the exhaust control unit 10G in the state where the on-off valve 384 is open, the ratio of the exhaust flow rate of the processing space SPc surrounded by the upper cup 33 and the lower cup 32 (hereinafter referred to as the "cup exhaust flow rate") and the exhaust flow rate of the space other than the processing space SPc in the internal space 12 of the chamber 11 (hereinafter referred to as the "chamber exhaust flow rate") can be changed. More specifically, when the atmosphere separation of the atmosphere separation mechanism 6 is performed by positioning the lower sealed cup member 61 at the lower limit position just above the liquid receiving portion 341 of the anti-scattering mechanism 3, the exhaust control unit 10G controls the damper 383 in such a manner that the cup exhaust flow rate is greater than the chamber exhaust flow rate. Thus, the gas components in the exhaust portion 342 are effectively exhausted. In addition, the pressure of the exhaust space SPe is adjusted. For example, the pressure of the exhaust space SPe is lowered compared to the pressure of the processing space SPc. As a result, the liquid droplets in the processing space SPc can be effectively introduced into the exhaust space SPe, and the movement of the liquid droplets from the processing space SPc can be promoted. On the other hand, when the formation of the separation of the atmosphere is cancelled by positioning the lower sealed cup member 61 vertically above the lower limit position, the exhaust control unit 10G controls the damper 383 so that the chamber exhaust flow rate is greater than the cup exhaust flow rate. As a result, as described later, the flow rate of the clean air constituting the air curtain formed along the lower sealed cup member 61 can be increased, and the inflow of foreign matter can be suppressed.

[0079] In addition, in the present embodiment, when the maintenance process is performed on the substrate processing apparatus 1, the exhaust control unit 10G closes the on-off valve 384. Thus, the connection between the substrate processing apparatus 1 and the exhaust device 130 can be blocked during the maintenance process, thereby surely preventing the operation of other substrate processing apparatuses 1 from being affected. That is, the maintenance process of the substrate processing apparatus 1 can be performed while other substrate processing apparatuses 1 are operated normally. As a result, the operation rate of the substrate processing system 100 can be improved.

[0080] The upper surface protection heating mechanism 4 has a blocking plate 41 disposed above the upper surface Wf of the substrate W held on the rotating chuck 21. The blocking plate 41 has a circular plate portion 42 held in a horizontal position. The circular plate portion 42 has a built-in heater 421 driven and controlled by a heater driving portion 422. The circular plate portion 42 has a diameter slightly shorter than that of the substrate W. The circular plate portion 42 is supported by a supporting member 43 in such a manner that the lower surface of the circular plate portion 42 covers the surface area of ​​the upper surface Wf of the substrate W except for the peripheral edge portion Ws from above. In addition, as Figure 5 As shown, a cutout portion is provided on the peripheral edge of the disk portion 42, but this is provided to prevent interference with the treatment liquid ejection nozzle included in the treatment mechanism 5. The cutout portion 44 opens toward the radially outer side.

[0081] The lower end of the support member 43 is mounted on the central portion of the disk portion 42. A cylindrical through hole is formed by vertically penetrating the support member 43 and the disk portion 42. In addition, the central nozzle 45 is inserted vertically through the through hole. Figure 3 As shown, the central nozzle 45 is connected to a heating gas supply unit 47 via a pipe (not shown). The heating gas supply unit 47 heats the normal temperature nitrogen gas supplied from the equipment of the factory where the substrate processing system 100 is installed, etc., through a heater 471, and supplies it to the substrate processing unit SP at a flow rate and timing corresponding to the heating gas supply instruction from the control unit 10.

[0082] The nitrogen gas heated in this way (hereinafter referred to as "heating gas") is pressure-fed toward the central nozzle 45 and ejected from the central nozzle 45. By supplying the heating gas while the circular plate portion 42 is positioned close to the processing position of the substrate W held on the spin chuck 21, the heating gas flows from the central portion of the space between the upper surface Wf of the substrate W and the circular plate portion 42 with a built-in heater toward the peripheral portion. As a result, the ambient gas around the substrate W can be suppressed from entering the upper surface Wf of the substrate W. As a result, the droplets contained in the above-mentioned ambient gas can be effectively prevented from being drawn into the space SPa between the substrate W and the circular plate portion 42. In addition, the upper surface Wf can be heated as a whole by the heating of the heater 421 and the heating gas, and the in-plane temperature of the substrate W can be uniformized. As a result, the warping of the substrate W can be suppressed and the landing position of the processing liquid can be stabilized.

[0083] like Figure 3 As shown, the upper end of the support member 43 is fixed to a beam member 49 extending along the first virtual horizontal line VL1. The beam member 49 is connected to the lifting mechanism 7 installed on the upper surface of the base member 17, and is raised and lowered by the lifting mechanism 7 according to the command from the control unit 10. For example, Figure 3In the embodiment, the beam member 49 is positioned at the bottom, and the circular plate portion 42 connected to the beam member 49 via the supporting member 43 is located at the processing position. On the other hand, when the lifting mechanism 7 receives the lifting command from the control unit 10 and lifts the beam member 49, the beam member 49, the supporting member 43 and the circular plate portion 42 are lifted together, and the upper cup 33 is also linked to separate from the lower cup 32 and lift up. As a result, the space between the spin chuck 21, the upper cup 33 and the circular plate portion 42 is expanded, and the substrate W can be carried in and out of the spin chuck 21.

[0084] The processing mechanism 5 includes a processing liquid discharge nozzle 51F ( Figure 5 ), the processing liquid discharge nozzle 51B ( Figure 3 ), and a treatment liquid supply unit 52 for supplying treatment liquid to the treatment liquid spraying nozzles 51F and 51B. Hereinafter, in order to distinguish the treatment liquid spraying nozzle 51F on the upper surface side from the treatment liquid spraying nozzle 51B on the lower surface side, they are referred to as "upper surface nozzle 51F" and "lower surface nozzle 51B", respectively. Figure 3 In the figure, two processing liquid supply parts 52 are shown, but they are the same.

[0085] In this embodiment, three upper surface nozzles 51F are provided, and they are connected to the treatment liquid supply unit 52. In addition, the treatment liquid supply unit 52 is configured to supply SC1, DHF, and functional water (CO2 water, etc.) as treatment liquids, and SC1, DHF, and functional water can be ejected independently from the three upper surface nozzles 51F.

[0086] In each upper surface nozzle 51F, a nozzle (not shown) for ejecting the processing liquid is provided on the lower surface of the top end. Figure 5 As shown in the enlarged view in FIG. 1 , the lower portion of a plurality of (three in this embodiment) upper surface nozzles 51F is arranged in the cutout portion 44 of the circular plate portion 42 (see FIG. 1 ) so that each nozzle is directed toward the peripheral edge of the upper surface Wf of the substrate W. Figure 5 ), and the upper portion of the upper surface nozzle 51F is mounted to be movable in the radial direction D1 relative to the nozzle holder 53. The nozzle holder 53 is connected to the nozzle moving portion 54.

[0087] The nozzle moving part 54 is mounted on the upper end of a lifting member (not shown) of the lifting part 713 described later, while holding the nozzle head 56 (= upper surface nozzle 51F + nozzle holder 53). Therefore, when the lifting member 713a is extended or retracted in the vertical direction according to the lifting command from the control unit 10, the nozzle moving part 54 and the nozzle head 56 move in the vertical direction Z accordingly.

[0088] The nozzle moving unit 54 includes a linear actuator and moves the nozzle head 56. As a result, the upper surface nozzle 51F attached to the nozzle head 56 is positioned in the radial direction D1. The upper surface nozzle 51F is accurately positioned at the bevel processing position.

[0089] The ejection port (not shown) of the upper surface nozzle 51F positioned at the bevel processing position faces the peripheral portion of the upper surface Wf of the substrate W. When the processing liquid supply unit 52 supplies the processing liquid corresponding to the supply instruction among the three processing liquids to the upper surface nozzle 51F for the processing liquid according to the supply instruction from the control unit 10, the processing liquid is supplied from the upper surface nozzle 51F from the end surface of the substrate W to a predetermined position.

[0090] In addition, the lower sealed cup member 61 of the atmosphere separation mechanism 6 is detachably fixed to a part of the components of the nozzle moving part 54. That is, when performing the bevel treatment, the upper surface nozzle 51F and the nozzle holder 53 are integrated with the lower sealed cup member 61 via the nozzle moving part 54, and are lifted and lowered in the vertical direction Z together with the lower sealed cup member 61 by the lifting mechanism 7.

[0091] In this embodiment, in order to spray the processing liquid toward the peripheral portion of the lower surface Wb of the substrate W, the lower surface nozzle 51B and the nozzle support portion 57 are arranged below the substrate W held by the spin chuck 21. The nozzle support portion 57 has a thin-walled cylindrical portion 571 extending in the vertical direction, and a flange portion 572 having a circular ring shape that is bent and expanded radially outward at the upper end of the cylindrical portion 571. The cylindrical portion 571 has a shape that can be loosely inserted into the air gap formed between the annular member 27a and the lower cup 32. And, as shown in FIG. Figure 3 As shown in FIG. 1 , the nozzle support portion 57 is fixedly arranged in such a manner that the cylindrical portion 571 is loosely inserted into the air gap and the flange portion 572 is located between the substrate W held by the spin chuck 21 and the lower cup 32. Three lower surface nozzles 51B are mounted on the upper surface peripheral portion of the flange portion 572. Each lower surface nozzle 51B has a spray port (not shown) opened toward the peripheral portion of the lower surface Wb of the substrate W, and can spray the processing liquid supplied from the processing liquid supply portion 52.

[0092] The processing liquid ejected from the upper surface nozzle 51F and the lower surface nozzle 51B performs a bevel processing on the peripheral edge of the substrate W. In addition, the flange portion 572 is extended to the vicinity of the peripheral edge portion Ws on the lower surface side of the substrate W. Therefore, the nitrogen gas supplied to the lower surface side through the pipe 28 flows into the processing space SPc along the flange portion 572. As a result, the backflow of droplets from the processing space SPc to the substrate W is effectively suppressed.

[0093] The atmosphere separation mechanism 6 includes a lower sealed cup member 61 and an upper sealed cup member 62. The lower sealed cup member 61 and the upper sealed cup member 62 are both cylindrical in shape with openings at the top and bottom. In addition, their inner diameters are larger than the outer diameter of the rotating cup portion 31. The atmosphere separation mechanism 6 is configured to completely surround the rotating chuck 21, the substrate W held on the rotating chuck 21, the rotating cup portion 31, and the upper surface protection heating mechanism 4 from above. In more detail, as shown in FIG. Figure 3 As shown, the upper sealing cup member 62 is mounted on the top wall 11f in such a manner that the upper opening thereof covers the opening 11f1 of the top wall 11f from below.

[0094] In addition, at the lower end of the upper sealed cup member 62, an annular rectifying member 14b is installed along the inner circumference of the upper sealed cup member 62. In addition, the lower sealed cup member 61 is arranged to be movable in the vertical direction Z while its outer circumference overlaps the inner circumference of the upper sealed cup member 62 in the vertical direction Z.

[0095] The lower end of the lower sealed cup member 61 has a flange portion 612 folded outward and having a circular ring shape. The flange portion 612 overlaps with the upper end of the fixed cup portion 34 (the upper end of the liquid receiving portion 341) when viewed from vertically above. Figure 5 As shown in the partial enlarged view in , the flange portion 612 of the lower sealed cup member 61 is locked by the fixed cup portion 34 via the O-ring 64. Thus, in the vertical direction Z, the lower sealed cup member 61 is connected to the fixed cup portion 34, and a closed space 12a is formed by the upper sealed cup member 62, the lower sealed cup member 61 and the fixed cup portion 34. In the closed space 12a, the substrate W can be subjected to a bevel treatment. That is, by positioning the lower sealed cup member 61 at the lower limit position, the closed space 12a is separated from the outer space 12b of the closed space 12a (environmental gas separation). Therefore, the bevel treatment can be performed stably without being affected by the external environmental gas. In addition, a treatment liquid is used for the bevel treatment, but it is possible to reliably prevent the treatment liquid from leaking from the closed space 12a to the outer space 12b. Therefore, the degree of freedom in the selection and design of the components arranged in the outer space 12b becomes higher.

[0096] The lower sealed cup member 61 is configured to be movable in the vertical direction upward. In addition, as described above, the nozzle head 56 (=upper surface nozzle 51F+nozzle holder 53) is fixed to the middle portion of the lower sealed cup member 61 in the vertical direction Z via the head support member 547 of the nozzle moving portion 54. Figure 3 and Figure 5 As shown, the upper surface protection heating mechanism 4 is also fixed to the middle part of the lower sealed cup member 61 via the beam member 49. Figure 5As shown, the lower sealed cup member 61 is connected to one end of the beam member 49, the other end of the beam member 49 and the head support member 547 at three different locations in the circumferential direction. And, by raising and lowering the one end of the beam member 49, the other end of the beam member 49 and the head support member 547 by the lifting mechanism 7, the lower sealed cup member 61 is also raised and lowered accordingly.

[0097] In the inner peripheral surface of the lower sealed cup member 61, as shown in FIG. Figure 3 and Figure 5 As shown, a plurality of (4) protrusions 613 are provided protruding inwardly as engaging portions that can engage with the upper cup 33. Each protrusion 613 is extended to the space below the upper annular portion 332 of the upper cup 33. In addition, each protrusion 613 is installed in a manner of moving away from the upper annular portion 332 of the upper cup 33 downward when the lower sealed cup member 61 is positioned at the lower limit position. Furthermore, by the rise of the lower sealed cup member 61, each protrusion 613 can engage with the upper annular portion 332 from below. After this engagement, the upper cup 33 and the lower cup 32 can also be separated by further rising the lower sealed cup member 61.

[0098] In the present embodiment, after the lower sealed cup member 61 begins to rise together with the upper surface protection heating mechanism 4 and the nozzle head 56 through the lifting mechanism 7, the upper cup 33 also rises together. As a result, the upper cup 33, the upper surface protection heating mechanism 4 and the nozzle head 56 move upward from the rotating chuck 21. By moving the lower sealed cup member 61 to the retreat position, a space for performing various processes is formed. This space is, for example, a transport space for the hand of the substrate transport robot 111 to enter and exit the rotating chuck 21. Furthermore, the substrate W can be loaded onto the rotating chuck 21 and removed from the rotating chuck 21 through this transport space. In addition, this space is also used when performing the centering process of the centering mechanism 8 or the observation process of the substrate observation mechanism 9.

[0099] In the lower sealed cup member 61 and the upper sealed cup member 62 constructed in this way, the inner rectifying member 14a and the outer rectifying member 14b are respectively installed. Figure 3 and Figure 5As shown, the inner rectifying member 14a is composed of a punching plate with a plurality of relatively small-diameter through holes 14a1 evenly dispersed, and is installed on the inner circumferential surface of the lower sealed cup member 61 in a manner to close the upper opening of the lower sealed cup member 61. Therefore, the clean air supplied from the fan filter unit 13 is rectified by the inner rectifying member 14a and supplied to the closed space 12a. The inner rectifying member 14a is installed on the lower sealed cup member 61. On the other hand, the outer rectifying member 14b is composed of a punching plate with through holes 14b1 having an inner diameter larger than the through holes 14a1 provided on a circular ring-shaped plate (an example of the "annular plate" of the present invention), and is installed on the upper sealed cup member 62 on one side between the outer circumferential surface of the lower sealed cup member 61 and the inner circumferential surface of the upper sealed cup member 62. Therefore, the clean air passing between the lower sealed cup member 61 and the upper sealed cup member 62 is rectified by the outer rectifying member 14b, for example, FIG. 8A to FIG. 8D As shown, the air flows downward along the outer side surface of the lower sealed cup member 61. As a result, the anti-scattering mechanism 3 and the ambient gas separation mechanism 6 are surrounded by the air curtain AC. In addition, the flow rate of the clean air constituting the air curtain AC is relatively small when the lower sealed cup member 61 is located at the lower limit position, and conversely, it is relatively large when the lower sealed cup member 61 moves to the vertically upper side of the lower limit position, that is, the retreat position. The reasons for the occurrence of such flow rate changes and the resulting effects will be described later in connection with the operation of the substrate processing device 1.

[0100] The upper end of the lower sealed cup member 61 has a flange portion 611 that is bent outward and expanded in a circular ring shape. The flange portion 611 overlaps with the flange portion 621 when viewed from above vertically. Therefore, when the lower sealed cup member 61 is lowered, Figure 5 As shown in the partially enlarged view in FIG. 1 , the flange portion 611 of the lower sealed cup member 61 is locked by a part of the outer rectifying member 14 b. Thus, the lower sealed cup member 61 is positioned at the above-mentioned lower limit position.

[0101] The lifting mechanism 7 includes two lifting drive units 71 and 72. In the lifting drive unit 71, a first lifting motor (not shown) is mounted on a first lifting mounting portion 173 ( Figure 4 ). The first lifting motor operates according to the driving command from the control unit 10 to generate a rotational force. Two lifting parts 712 and 713 are connected to the first lifting motor. The lifting parts 712 and 713 are simultaneously subjected to the above-mentioned rotational force from the first lifting motor. Then, the lifting part 712 lifts the support member 491 at one end of the support beam member 49 in the vertical direction Z according to the rotation amount of the first lifting motor. In addition, the lifting part 713 lifts the head support member 547 supporting the nozzle head 56 in the vertical direction Z according to the rotation amount of the first lifting motor.

[0102] In the lifting drive unit 72, a second lifting motor (not shown) is mounted on a second lifting mounting portion 174 ( Figure 4 The lifting unit 722 is connected to the second lifting motor. The second lifting motor is operated according to the driving instruction from the control unit 10, generates a rotational force, and applies it to the lifting unit 722. The lifting unit 722 lifts the support member 492 at the other end of the support beam member 49 in the vertical direction Z according to the rotation amount of the second lifting motor.

[0103] The lifting drive parts 71 and 72 move the support members 491, 492, and 54 respectively fixed to the side surface of the lower sealed cup member 61 at three different positions in the circumferential direction synchronously in the vertical direction Z. Therefore, the upper surface protection heating mechanism 4, the nozzle head 56, and the lower sealed cup member 61 can be stably lifted and lowered. In addition, as the lower sealed cup member 61 is lifted and lowered, the upper cup 33 can also be stably lifted and lowered.

[0104] Fig. 9 2 is a diagram schematically showing the structure and operation of the centering mechanism. The centering mechanism 8 performs a centering process during the period when the suction of the pump 26 is stopped (i.e., during the period when the substrate W can move horizontally on the upper surface of the spin chuck 21). The centering process eliminates the above-mentioned eccentricity, and the center of the substrate W is consistent with the rotation axis AX. Figure 5 and Fig. 9 As shown, the centering mechanism 8 has a single contact portion 81 which is arranged on the side of the conveying opening 11b1 with respect to the rotation axis AX in the contact movement direction D2 inclined at about 40° with respect to the first virtual horizontal line VL1 ( Fig. 9 multi-abutment portion 82, which is disposed on the maintenance opening 11d1 side ( Fig. 9 and a centering drive portion 83, which causes the single abutment portion 81 and the multi-abutment portion 82 to move toward the abutment movement direction D2.

[0105] The single contact portion 81 has a shape extending in parallel with the contact movement direction D2, and is processed so that the top end portion on the spin chuck 21 side can contact the end surface of the substrate W on the spin chuck 21. On the other hand, the multiple contact portions 82 have a substantially Y-shaped shape when viewed from vertically above, and are processed so that the top ends of the forked portions on the spin chuck 21 side can contact the end surface of the substrate W on the spin chuck 21. These single contact portions 81 and multiple contact portions 82 are freely movable in the contact movement direction D2.

[0106] The centering drive unit 83 includes a single moving unit 831 for moving the single contact unit 81 in the contact movement direction D2, and a multi-moving unit 832 for moving the multi-contact unit 82 in the contact movement direction D2. The single moving unit 831 is mounted on the single moving mounting portion 175 ( Figure 4), the multi-movable portion 832 is mounted on the multi-movable mounting portion 176 of the base member 17 ( Figure 4 During the period when the centering process of the substrate W is not being performed, the centering drive unit 83 is as follows: Figure 5 and Fig. 9 As shown in column (a) of FIG. 1 , the single contact portion 81 and the multiple contact portions 82 are spaced apart from the spin chuck 21 and positioned. Therefore, the single contact portion 81 and the multiple contact portions 82 are separated from the transport path TP, which can effectively prevent the single contact portion 81 and the multiple contact portions 82 from interfering with the substrate W carried in and out of the chamber 11.

[0107] On the other hand, when the centering process of the substrate W is performed, according to the centering instruction from the control unit 10, the single moving part 831 moves the single contact part 81 toward the rotation axis AX, and the multiple moving parts 832 move the multiple contact parts 82 toward the rotation axis AX. Fig. 9 As shown in column (b), the center of the substrate W coincides with the rotation axis AX.

[0108] Fig.10 It is a perspective view showing an observation head of the substrate observation mechanism. Fig.11 yes Fig.10 The substrate observation mechanism 9 includes a light source unit 91, an imaging unit 92, an observation head 93, and an observation head driving unit 94. The light source unit 91 and the imaging unit 92 are provided at the optical component mounting position 177 ( Figure 4 The light source unit 91 irradiates the observation position with illumination light according to the illumination instruction from the control unit 10. The observation position is a position corresponding to the peripheral portion Ws of the substrate W. Fig.10 The middle is equivalent to the position where the observation head 93 is positioned.

[0109] The observation head 93 can reciprocate between an observation position and a spaced-apart position away from the observation position toward the radially outer side of the substrate W. The observation head driving unit 94 is connected to the observation head 93. The observation head driving unit 94 is located at the head driving position 178 ( Figure 4 ) is mounted on the base member 17. Furthermore, the observation head driving unit 94 reciprocates the observation head 93 along the head moving direction D3 inclined at about 10° relative to the first imaginary horizontal line VL1 according to the head moving instruction from the control unit 10. More specifically, during the period when the observation processing of the substrate W is not performed, the observation head driving unit 94 moves the observation head 93 to the retreat position for positioning. Therefore, the observation head 93 leaves the transport path TP, which can effectively prevent the observation head 93 from interfering with the substrate W that is moved in and out of the chamber 11. On the other hand, when the observation processing of the substrate W is performed, the observation head driving unit 94 moves the observation head 93 to the observation position according to the substrate observation instruction from the control unit 10.

[0110] like Fig.10 and Fig.11 As shown, the observation head 93 includes a diffusion lighting unit 931 having five diffusion surfaces 931 a to 931 d , a guide unit 932 composed of three mirror members 932 a to 932 c , and a holding unit 933 .

[0111] The holding portion 933 is made of, for example, PEEK (polyetheretherketone). Fig.10 and Fig.11 As shown in FIG. 1 , a cutout portion 9331 is provided at the end portion on the substrate W side. The vertical dimension Z of the cutout portion 9331 is wider than the thickness of the substrate W. Fig.10 As shown, when the observation head 93 is positioned at the observation position, the cutout portion 9331 enters the peripheral portion Ws of the substrate W and the area further radially inward from the peripheral portion Ws. In addition, the holding portion 933 is processed into a shape that can be interlocked with the diffuse lighting portion 931. In addition, the holding portion 933 has mirror support portions 933a to 933c that respectively support the mirror components 932a to 932c from the back side. Therefore, the diffuse lighting portion 931 and the holding portion 933 are integrated while holding the mirror components 932a to 932c by interlocking with each other.

[0112] The diffuse lighting unit 931 is made of, for example, PTFE (polytetrafluoroethylene). Fig.10 and Fig.11 As shown in FIG. 1 , the diffuse lighting portion 931 has a plate shape extending in the horizontal direction, and similarly to the holding portion 933, a cutout portion 9311 is formed at the end portion on the substrate W side. Fig.10 As shown, it has an inverted C shape when viewed from the circumferential direction of the substrate W. In addition, in the diffuse lighting portion 931, an inclined surface is provided along the cutout portion 9311. The inclined surface is a tapered surface processed in a manner that inclines toward the direction in which the illumination light travels (the horizontal direction orthogonal to the direction D3) as it approaches the cutout portion 9311. In particular, the vertically upper region, the side region, and the vertically lower region of the cutout portion 9311 in the tapered surface function as diffusion surfaces 931a to 931c, respectively. In addition, in the cutout portion 9311, the regions of the mirror members 932a and 932c located on the side of the rotation axis AX function as diffusion surfaces 931d and 931e, respectively.

[0113] When the observation head 93 configured in this way is positioned at the observation position, the diffusion surfaces 931a to 931e are located in the illumination area ( Fig.10Thick dashed area). When the light source unit 91 is turned on according to the lighting command from the control unit 10 in this positioning state, the illumination light is irradiated to the illumination area. At this time, the diffusion surfaces 931a~931e diffuse and reflect the illumination light, and illuminate the peripheral portion Ws and the adjacent area of ​​the substrate W from various directions. Here, a part of the upper surface diffused light of the illumination light toward the upper surface of the substrate W including the peripheral portion Ws is reflected on the upper surface of the peripheral portion Ws and the adjacent area of ​​the peripheral portion Ws (the upper surface area adjacent to the peripheral portion Ws on the radial inside). After being reflected by the reflecting surface of the mirror member 932a, the reflected light is guided to the camera unit 92. In addition, a part of the lower surface diffused light of the illumination light toward the lower surface of the substrate W including the peripheral portion Ws is reflected on the lower surface of the peripheral portion Ws and the adjacent area of ​​the peripheral portion Ws (the lower surface area adjacent to the peripheral portion Ws on the radial inside). The reflected light is reflected by the reflection surface of the mirror member 932c and then guided to the imaging unit 92. A portion of the side diffusion light toward the side surface (end surface) Wse of the substrate W in the illumination light is reflected by the side surface Wse of the substrate W. The reflected light is reflected by the reflection surface of the mirror member 62b and then guided to the imaging unit 92.

[0114] The imaging unit 92 has an observation lens system composed of an object-side telecentric lens and a CMOS (Complementary Metal Oxide Semiconductor) camera. Therefore, among the reflected light guided from the observation head 93, only the light parallel to the optical axis of the observation lens system is incident on the sensor surface of the CMOS camera, and the image of the peripheral portion Ws and the adjacent area of ​​the substrate W is formed on the sensor surface. In this way, the imaging unit 92 captures the peripheral portion Ws and the adjacent area of ​​the substrate W, and obtains the upper surface image, the side image, and the lower surface image of the substrate W. Then, the imaging unit 92 sends the image data representing the image to the control unit 10.

[0115] like Figure 3As shown, the control unit 10 has an operation processing unit 10A, a storage unit 10B, a reading unit 10C, an image processing unit 10D, a drive control unit 10E, a communication unit 10F and an exhaust control unit 10G. The storage unit 10B is composed of a hard disk drive, etc., and stores a program for performing bevel processing through the above-mentioned substrate processing device 1. The program is stored in a computer-readable recording medium RM (for example, an optical disk, a magnetic disk, a magneto-optical disk, etc.), read from the recording medium RM by the reading unit 10C, and stored in the storage unit 10B. In addition, the provision of the program is not limited to the recording medium RM, for example, it can also be configured in a manner of providing the program via an electrical communication line. The image processing unit 10D performs various processes on the image captured by the substrate observation mechanism 9. The drive control unit 10E controls the various drive units of the substrate processing device 1. The communication unit 10F communicates with the control unit that integrates and controls the various parts of the substrate processing system 100. The exhaust control unit 10G controls a damper 383 that adjusts the ratio of the cup exhaust flow rate to the chamber exhaust flow rate, and an on-off valve 384 that switches between connection and stop of connection with the exhaust device 130 .

[0116] Furthermore, the control unit 10 is connected to a display unit 10H (for example, a monitor) that displays various information and an input unit 10J (for example, a keyboard, a mouse, etc.) that receives input from an operator.

[0117] The processing unit 10A is composed of a computer having a CPU (=Central Processing Unit) or a RAM (=Random Access Memory), etc., and controls each unit of the substrate processing apparatus 1 as follows according to a program stored in the storage unit 10B to perform the bevel processing. Fig.12 The bevel surface processing of the substrate processing apparatus 1 will be described.

[0118] Fig.12 Yes means through Figure 3 The substrate processing apparatus shown in the figure performs a flow chart of a slope processing as an example of a substrate processing operation. Fig.13 FIG. 1 is a diagram showing the state of each part of the device in each state of the substrate processing operation. FIG. 8A to FIG. 8D , Fig.12 and Fig.13 Next, description will be given of the content of bevel processing which is one example of the “substrate processing method” of the present invention.

[0119] When the substrate W is subjected to the bevel processing by the substrate processing apparatus 1, the calculation processing unit 10A moves the single moving unit 831 and the multi-contact unit 82 to the retreat position away from the spin chuck 21 through the centering drive unit 83, and moves the observation head 93 to the standby position away from the spin chuck 21 through the observation head drive unit 94. Figure 5 As shown in FIG. 1 , the nozzle head 56, the light source unit 91, the camera unit 92, the motor 23, and the multi-contact unit 82, among the components disposed around the spin chuck 21, are located on the side of the maintenance opening 11d1 (the lower side in the figure) relative to the first virtual horizontal line VL1. In addition, the single moving unit 831 and the observation head 93 are located on the side of the transport opening 11b1 relative to the first virtual horizontal line VL1, but away from the moving area of ​​the substrate W along the transport path TP. Thus, when the substrate W is carried in and out of the spin chuck 21, interference with the substrate W can be reliably avoided.

[0120] Furthermore, the arithmetic processing unit 10A causes each unit of the substrate processing apparatus 1 to automatically Fig. 8A The state suitable for bevel processing shown ( Fig.13 State A) in the transition to Figure 8B The state of opening the baffle 15 shown ( Fig.13 State B in the processing unit). Specifically, in a state where the ambient gas is separated by positioning the lower sealed cup member 61 at the lower limit position, and the maintenance opening 11d1 is closed by installing the cover member 19 on the side wall 11d, the operation processing unit 10A opens the baffle 15. At this time, foreign matter may flow into the chamber 11 through the opened conveying opening 11b1. However, since the processing space SPc is separated by the ambient gas, foreign matter does not flow into the processing space SPc. In addition, in the present embodiment, in states A and B, the damper 383 adjusts the flow rate in a manner such that (cup exhaust flow rate: chamber exhaust flow rate = 9:1). Therefore, most of the clean air supplied from the fan filter unit 13 flows into the processing space SPc. On the other hand, a part of the clean air flows downward along the outer side surface of the lower sealed cup member 61 to form an air curtain AC. Therefore, foreign matter flowing into the chamber 11 is discharged from the chamber 11 by the flow of the clean air constituting the air curtain AC.

[0121] After the baffle is opened, Figure 8C As shown, the calculation processing unit 10A causes the beam member 49, the supporting member 43, the circular plate portion 42, the upper cup 33 and the lower sealed cup member 61 to rise integrally. Thus, a transport space is formed for the hand of the substrate transport robot 111 to enter and exit the spin chuck 21. That is, the substrate processing device 1 becomes a state C in which substrate transport is possible, and the loading preparation of the substrate W is completed.

[0122] Here, in the substrate processing apparatus 1 in state C, as shown in FIG. Figure 8CAs shown, the formation of the ambient gas separation space is eliminated, and the inner rectifying member 14a rises integrally with the lower sealed cup member 61. As a result, a differential pressure is generated in the space below the inner rectifying member 14a and the space below the outer rectifying member 14b. As a result, as shown by the thick arrow in the figure, the flow rate of the clean air flowing from the outer rectifying member 14b along the outer side surface of the lower sealed cup member 61 to the bottom (equivalent to the "outer flow rate" of the present invention) increases. That is, the effect of the air curtain AC in suppressing the flow of foreign matter into the processing space SPc is improved. As a result, although the formation of the ambient gas separation space is eliminated, the invasion of foreign matter into the processing space SPc can also be effectively suppressed. In addition, in the present embodiment, the flow rate adjustment of the damper 383 is changed in correspondence with the increase in the flow rate of the clean air supplied vertically downward from the outer rectifying member 14b as described above, and the decrease in the flow rate of the clean air supplied vertically downward from the inner rectifying member 14a (equivalent to the "inner flow rate" of the present invention). The damper 383 adjusts the flow rate in a manner such that (cup exhaust flow rate: chamber exhaust flow rate = 3:7), for example. Therefore, the total amount of exhaust gas delivered to the exhaust device 130 (= cup exhaust flow rate + chamber exhaust flow rate) can be prevented from varying significantly. Therefore, the following effects can be obtained. That is, the substrate processing device 1 is connected in parallel with other substrate processing devices 1 through the common piping 131. Therefore, if the total amount of exhaust gas from the substrate processing device 1 varies significantly, it may have an adverse effect on the remaining substrate processing devices 1, and the substrate processing in the remaining substrate processing devices 1 becomes unstable. However, in the present embodiment, since the above-mentioned ratio is switched according to the state and the variation of the total amount of exhaust gas is suppressed, there is no adverse effect on other substrate processing devices 1, and stable substrate processing is performed.

[0123] In this way, while the air curtain AC is used to prevent foreign matter from flowing into the processing space SPc, a transfer space sufficient for the hand of the substrate transfer robot 111 (not shown) to enter is formed above the spin chuck 21. The processing unit 10A sends a loading request for the substrate W to the substrate transfer robot 111 via the communication unit 10F, and waits for the substrate W to be loaded. Figure 5 The transport path TP shown carries an unprocessed substrate W into the substrate processing apparatus 1 and places it on the upper surface of the spin chuck 21. Then, the substrate W is placed on the spin chuck 21 (step S1). At this point in time, the pump 26 is stopped, and the substrate W can move horizontally on the upper surface of the spin chuck 21.

[0124] When the loading of the substrate W is completed, the substrate transport robot 111 retreats from the substrate processing apparatus 1 along the transport path TP. Fig.8D As shown, the processing unit 10A closes the baffle 15 ( Fig.13In this way, after the preparation for the centering process is completed, the operation processing unit 10A controls the centering drive unit 83 in such a way that the single moving unit 831 and the multi-contact unit 82 approach the substrate W on the rotary chuck 21. As a result, the eccentricity of the substrate W relative to the rotary chuck 21 is eliminated, and the center of the substrate W coincides with the center of the rotary chuck 21 (step S2). In this way, after the centering process is completed, the operation processing unit 10A controls the centering drive unit 83 in such a way that the single moving unit 831 and the multi-contact unit 82 leave the substrate W, and operates the pump 26 to apply negative pressure to the rotary chuck 21. As a result, the rotary chuck 21 adsorbs and holds the substrate W from below.

[0125] Next, the calculation processing unit 10A applies a descending command to the lifting drive units 71 and 72. In response, the lifting drive units 71 and 72 lower the lower sealed cup member 61, the nozzle head 56, the beam member 49, the support member 43, and the circular plate portion 42 as a whole. In the middle of the descent, the upper cup 33 supported from below by the protrusion 613 of the lower sealed cup member 61 is connected to the lower cup 32. Thus, the rotating cup portion 31 (= a connected body of the upper cup 33 and the lower cup 32) is formed.

[0126] After the rotating cup portion 31 is formed, the lower sealed cup member 61, the nozzle head 56, the beam member 49, the support member 43 and the circular plate portion 42 are further lowered as a whole, and the flanges 611 and 612 of the lower sealed cup member 61 are respectively locked by the outer rectifying member 14b and the fixed cup portion 34. As a result, the lower sealed cup member 61 is positioned at the lower limit position ( Figure 3 Thus, if Fig. 8A As shown, the upper and lower sealed cup members 61 are connected to the fixed cup portion 34 in the vertical direction Z, and a sealed space 12a is formed by the upper sealed cup member 62, the lower sealed cup member 61 and the fixed cup portion 34. The sealed space 12a is separated from the external ambient gas (external space 12b). In this way, the substrate processing device 1 moves from state D to state A. Fig. 8A As shown, it returns to the ambient gas separation state suitable for bevel processing.

[0127] In this state of environmental gas separation, the lower surface of the circular plate portion 42 covers the surface area of ​​the upper surface Wf of the substrate W except the peripheral portion Ws from above. In addition, the upper surface nozzle 51F is positioned in the cutout portion 44 of the circular plate portion 42 in a posture that the nozzle is directed toward the peripheral portion of the upper surface Wf of the substrate W. In this way, when the preparation for supplying the processing liquid to the substrate W is completed, the operation processing unit 10A applies a rotation command to the motor 23 to start the rotation of the rotating chuck 21 and the rotating cup portion 31 that hold the substrate W (step S4). The rotation speed of the substrate W and the rotating cup portion 31 is set to, for example, 1800 rpm. In addition, the operation processing unit 10A drives and controls the heater driving unit 422 to heat the heater 421 to a desired temperature, for example, 185°C.

[0128] Next, the operation processing unit 10A applies a heating gas supply instruction to the heating gas supply unit 47. As a result, the nitrogen gas heated by the heater 471, that is, the heating gas, is pressed from the heating gas supply unit 47 to the central nozzle 45 (step S5). The heating gas is heated by a belt heater (not shown) while passing through the piping (not shown). As a result, while preventing the temperature of the heating gas from decreasing during the gas supply through the piping, the heating gas is ejected from the central nozzle 45 to the processing space SPc clamped by the substrate W and the circular plate portion 42. As a result, the upper surface Wf of the substrate W is fully heated. In addition, the heating of the substrate W is also performed by the heater 421. Therefore, as time passes, the temperature of the peripheral portion Ws of the substrate W rises and reaches a temperature suitable for bevel processing, for example, 90°C. In addition, the temperature outside the peripheral portion Ws also rises to a substantially equal temperature. That is, in this embodiment, the in-plane temperature of the upper surface Wf of the substrate W is substantially uniform. Therefore, the warping of the substrate W can be effectively suppressed.

[0129] Then, the operation processing unit 10A controls the processing liquid supply unit 52 to supply the processing liquid to the upper surface nozzle 51F and the lower surface nozzle 51B. That is, the liquid flow of the processing liquid is ejected from the upper surface nozzle 51F to hit the upper surface peripheral portion of the substrate W, and the liquid flow of the processing liquid is ejected from the lower surface nozzle 51B to hit the lower surface peripheral portion of the substrate W. Thus, the bevel processing of the peripheral portion Ws of the substrate W is performed (step S6). Then, when the operation processing unit 10A detects that the processing time required for the bevel processing of the substrate W has passed, etc., it applies a supply stop instruction to the processing liquid supply unit 52 to stop ejecting the processing liquid.

[0130] Then, the processing unit 10A applies a supply stop command to the heating gas supply unit 47 to stop the supply of nitrogen gas from the heating gas supply unit 47 to the central nozzle 45 (step S7). In addition, the processing unit 10A applies a rotation stop command to the motor 23 to stop the rotation of the rotation chuck 21 and the rotation cup unit 31 (step S8).

[0131] In the next step S9, the operation processing unit 10A observes the peripheral portion Ws of the substrate W and checks the result of the bevel processing. More specifically, the operation processing unit 10A controls the various parts of the device in such a way that the substrate processing device 1 becomes a state D. Then, the operation processing unit 10A controls the observation head driving unit 94 to bring the observation head 93 close to the substrate W. Then, the operation processing unit 10A illuminates the peripheral portion Ws of the substrate W through the observation head 93 by lighting the light source unit 91. In addition, the camera unit 92 receives the reflected light reflected by the peripheral portion Ws and the adjacent area, and photographs the peripheral portion Ws and the adjacent area. That is, from the images of the plurality of peripheral portions Ws obtained by the camera unit 92 during the rotation of the substrate W around the rotation axis AX, the peripheral portion image of the peripheral portion Ws along the rotation direction of the substrate W is obtained. Then, the operation processing unit 10A controls the observation head driving unit 94 to make the observation head 93 retreat from the substrate W. In parallel, the arithmetic processing unit 10A checks whether the bevel processing has been performed well based on the image of the peripheral portion Ws and the adjacent area captured, that is, the peripheral portion image. In addition, in this embodiment, as an example of this inspection, the processing width from the end surface of the substrate W toward the center of the substrate W after being processed by the processing liquid is inspected from the peripheral portion image (post-processing inspection).

[0132] After checking, if Figure 8C As shown, the processing unit 10A opens the shutter 15, and the substrate processing apparatus 1 moves from state D to state C. In addition, the processing unit 10A issues a request to the substrate transport robot 111 to remove the substrate W via the communication unit 10F, and the processed substrate W is removed from the substrate processing apparatus 1 (step S10). In addition, these series of steps are repeatedly executed.

[0133] As shown above, in this embodiment, the lower sealed cup member 61 is positioned at the lower limit position. Fig. 8A As shown in FIG. 1 , the lower sealed cup member 61 and the upper sealed cup member 62 form an ambient gas separation space to separate the processing space SPc from the surrounding ambient gas. Therefore, it is possible to effectively prevent foreign matter from flowing into the processing space SPc during the slope processing. In addition, when the substrate is transported, the centering process is performed, and the observation process is performed, the formation of the ambient gas separation space is eliminated as the lower sealed cup member 61 rises. However, as shown in FIG. FIG. 8B to FIG. 8D As shown, the flow rate of clean air flowing out to the outer space 12b through the outer rectifying member 14b increases according to the differential pressure generated by the integral rise of the inner rectifying member 14a and the lower sealed cup member 61. As a result, the flow rate of clean air constituting the air curtain AC formed in a manner surrounding the processing space SPc also increases, and the barrier performance of the air curtain AC is improved. As a result, the air curtain AC can effectively suppress the flow of foreign matter into the processing space SPc.

[0134] In addition, in this embodiment, if Figure 8B and Figure 8C As shown, since the atmosphere separation space is formed before the opening of the baffle 15 is completed, the time to eliminate the formation of the atmosphere separation space can be shortened. As a result, the inflow of foreign matter into the processing space SPc can be more effectively suppressed.

[0135] In addition, in the present embodiment, the inner rectifying member 14a and the lower sealed cup member 61 are integrally raised to increase the ratio of clean air supplied from the fan filter unit 13 that flows into the outer rectifying member 14b, thereby improving the barrier performance of the air curtain AC. Therefore, when the substrate W is carried in and out, during the centering process, observation process, or maintenance process, it is not necessary to provide a dedicated drive mechanism for strengthening the air curtain AC, and energy can be saved and foreign matter can be suppressed from flowing into the processing space SPc. In addition, it is not necessary to increase the supply of clean air from the fan filter unit 13 in order to strengthen the air curtain AC, so the consumption of clean air can be suppressed, and the life of the fan filter unit 13 can be extended.

[0136] In addition, in the present embodiment, since the anti-scattering mechanism 3 and the ambient gas separation mechanism 6 have a circular shape when viewed from above the chamber 11, the gas outlet (not shown) of the fan filter unit 13 for blowing out clean air is processed to be circular when viewed from the side of the ambient gas separation mechanism 6. In addition, the center of the gas outlet is configured to be roughly consistent with the rotation axis AX. Therefore, clean air is uniformly supplied to the ambient gas separation space, and the flow rate of the clean air constituting the air curtain AC is also uniform in the horizontal plane, and the air curtain AC prevents foreign matter moving from any horizontal direction from flowing into the processing space SPc. As a result, the inflow of foreign matter can be stably suppressed.

[0137] In addition, in the present embodiment, the flow rate of clean air flowing into the enclosed space 12a and the flow rate of clean air flowing into the outer space 12b vary by the integral lifting of the inner rectifying member 14a and the lower enclosed cup member 61, but the damper 383 adjusts the ratio of the cup exhaust flow rate to the chamber exhaust flow rate according to the variation. Therefore, in the substrate processing device 1, although the formation and cancellation of the atmosphere separation space are switched according to the lifting of the lower enclosed cup member 61, the total exhaust volume can be maintained at a constant volume. In particular, in the substrate processing system 100, since a plurality of substrate processing devices 1 are connected in parallel through the common pipe 131, there is no problem that the variation of the total exhaust volume in one substrate processing device 1 has an adverse effect on other substrate processing devices 1, and the bevel processing can be stably performed in each substrate processing device 1.

[0138] In addition, each substrate processing apparatus 1 is provided with an on-off valve 384, and as described below, the on-off valve 384 can be closed during maintenance processing to isolate the substrate processing apparatus 1 from other substrate processing apparatuses 1. Therefore, maintenance processing in one substrate processing apparatus 1 and bevel processing in other substrate processing apparatuses 1 can be stably performed in parallel.

[0139] However, the substrate processing apparatus 1 is provided with four states A to D in the bevel processing (substrate processing). Fig.14 As shown, three states are prepared according to the content of the maintenance process.

[0140] Fig.14 The diagrams show the states of each part of the device in each state of the maintenance process. Fig.15A It is a diagram schematically showing the state of each part of the device during the first maintenance process. Fig. 15B It is a diagram schematically showing the state of each part of the device during the second maintenance process. Fig. 15C 3 is a diagram schematically showing the state of each part of the device during the third maintenance process. FIG. 15A to FIG. 15C As shown, the on-off valve 384 is closed to cut off the connection with other substrate processing apparatuses 1 and the exhaust device 130. In addition, in the disconnected state, the operator removes the cover member 19 from the chamber 11 to open the maintenance opening 11d1.

[0141] On the other hand, when the first maintenance process is executed, Fig.14 and Fig.15A As shown, the operation processing unit 10A opens the baffle 15 and positions the lower sealed cup member 61 in the retreat position. Therefore, the operator can enter and exit the internal space 12 from either the transport opening 11b1 or the maintenance opening 11d1. In addition, the lower sealed cup member 61, the nozzle head 56, the beam member 49, the support member 43 and the circular plate portion 42 are integrally positioned in the retreat position. Therefore, the operator can also enter and exit the processing space SPc. In the state E, since the transport opening 11b1 and the maintenance opening 11d1 are open, foreign matter may flow in through them. However, as in states C and D, the flow rate of the clean air constituting the air curtain AC increases, and the barrier performance of the air curtain AC improves. As a result, the air curtain AC can effectively suppress the flow of foreign matter into the processing space SPc.

[0142] When performing the second maintenance process, Fig.14 and Fig. 15BAs shown, the calculation processing unit 10A opens the baffle 15 and positions the lower sealed cup member 61 at the lower limit position. Therefore, an atmosphere separation space is formed, and it is impossible to enter and exit the processing space SPc, but the operator can enter and exit the internal space 12 from any one of the transport opening 11b1 and the maintenance opening 11d1. In the state F, the processing space SPc is separated by the atmosphere, similar to the states A and B. Therefore, since the transport opening 11b1 and the maintenance opening 11d1 are open, foreign matter may flow in through them, but the above-mentioned separation of the atmosphere suppresses the flow of foreign matter into the processing space SPc.

[0143] In the third maintenance process, that is, when the maintenance is performed by entering and exiting the internal space 12 only from either the transport opening 11b1 or the maintenance opening 11, for example Fig.14 and Fig. 15C As shown, the operation processing unit 10A closes the baffle 15, and the lower sealed cup member 61 can be positioned at the lower limit position (state G), or it can be positioned at the retreat position. In either case, the operator can enter and exit the internal space 12 from the maintenance opening 11d1. And, in the latter case, the lower sealed cup member 61, the nozzle head 56, the beam member 49, the support member 43 and the circular plate portion 42 are integrally positioned at the retreat position. Therefore, the operator can also enter and exit the processing space SPc from the maintenance opening 11d1 side. In this state, as in the first maintenance treatment, the flow rate of the clean air constituting the air curtain AC increases, and the barrier performance of the air curtain AC improves. As a result, the air curtain AC can effectively suppress the flow of foreign matter into the processing space SPc. Furthermore, it can also be self- Fig.15A status or Fig. 15B In either case, the operator can enter and exit the internal space 12 through the transport opening 11b1, and the same effects as above can be obtained.

[0144] As described above, in the above-mentioned embodiment, the opening 11f1, the conveying opening 11b1 and the maintenance opening 11d1 are respectively equivalent to an example of the “first opening”, “second opening” and “third opening” of the present invention. The fan filter unit 13 is equivalent to an example of the “gas supply part” of the present invention. The upper sealed cup member 62 and the lower sealed cup member 61 are respectively equivalent to an example of the “upper sealed member” and the “lower sealed member” of the present invention. Clean air is equivalent to an example of the “gas” of the present invention. The cup exhaust flow rate and the chamber exhaust flow rate are respectively equivalent to an example of the “first exhaust flow rate” and the “second exhaust flow rate” of the present invention. The damper 383 is equivalent to an example of the “exhaust flow adjustment part” of the present invention.

[0145] In addition, the present invention is not limited to the above-mentioned embodiment, and various changes can be made to the above-mentioned as long as they do not deviate from the main purpose. For example, in the above-mentioned embodiment, in the substrate processing device 1, the present invention is applied to a substrate processing device having a high bottom plate structure in which a substrate processing part SP is provided on the upper surface of a base member 17. In addition, in the above-mentioned embodiment, the present invention is applied to a substrate processing device having a rotating cup part 31. In addition, in the above-mentioned embodiment, the present invention is applied to a substrate processing device having an upper surface protection heating mechanism 4, an environmental gas separation mechanism 6, a centering mechanism 8 and a substrate observation mechanism 9. However, as described in patent document 1, for example, the present invention can be applied to a substrate processing device that does not have these structures, that is, a substrate processing device as a whole that supplies a processing liquid to a substrate W in the internal space 12 of a chamber 11 and performs substrate processing on the substrate W.

[0146] In addition, in the above-described embodiment, one exhaust device 130 is used to exhaust the plurality of substrate processing apparatuses 1 , but an exhaust unit may be provided for each substrate processing apparatus 1 .

[0147] In addition, in the above-described embodiment, the inner rectifying member 14 a and the outer rectifying member 14 b are formed of punched plates, but rectifying members of other types, for example, louver-type rectifying members may be used.

[0148] The invention has been described above with reference to specific embodiments, but the description is not intended to be interpreted in a limiting sense. With reference to the description of the present invention, various modifications of the disclosed embodiments will be apparent to those skilled in the art, as will other embodiments of the present invention. Therefore, the appended claims are intended to include such modifications or embodiments within the scope of the present invention.

[0149] Industrial Applicability

[0150] The present invention is applicable to the entire substrate processing technology for processing a substrate by supplying a processing liquid to the substrate.

[0151] [Description of Reference Numerals]

[0152] 1: Substrate processing equipment

[0153] 2A: Substrate holding part

[0154] 2B: Rotating mechanism

[0155] 3: Anti-scattering mechanism

[0156] 5: Processing Agency

[0157] 6: Environmental gas separation mechanism

[0158] 7: Lifting mechanism

[0159] 8: Centering mechanism

[0160] 9: Substrate observation mechanism

[0161] 10: Control unit

[0162] 10A: Calculation processing unit

[0163] 10G: Exhaust control unit

[0164] 11: Chamber

[0165] 11b1: Opening for transport (second opening)

[0166] 11d1: Maintenance opening (second opening)

[0167] 12: Internal Space

[0168] 12a: Confined Space

[0169] 12b: Outside Space

[0170] 13: Fan filter unit (gas supply unit)

[0171] 14a: Inner fairing member

[0172] 14b: Outer fairing member

[0173] 15: Baffle

[0174] 19: Cover member

[0175] 21: Rotating chuck

[0176] 61: Lower sealed cup component (lower sealed component)

[0177] 62: Upper sealed cup component (upper sealed component)

[0178] 100: Substrate processing system

[0179] 130: Exhaust

[0180] 383: Damper (exhaust flow adjustment unit)

[0181] AC: Air Curtain

[0182] AX: Rotation axis

[0183] SPc: Processing Space

[0184] Z: vertical direction

Claims

1. A substrate processing device, characterized in that: have: a chamber having an interior space; A substrate holding portion configured to hold the substrate substantially horizontally in the internal space while rotating around a rotation axis extending in a vertical direction; a rotating mechanism that rotates the substrate holding portion around the rotation axis; a processing mechanism that performs substrate processing on the substrate by supplying a processing liquid to the substrate held by the substrate holding portion rotated by the rotating mechanism; An anti-scattering mechanism, one side of which surrounds the outer periphery of the substrate and the other side of which captures and discharges the processing liquid scattered from the substrate as the substrate holding portion rotates; a gas supply unit that supplies gas to the internal space from a first opening provided on the top wall of the chamber; An environmental gas separation mechanism, comprising an upper cylindrical sealing member mounted on the top wall in a manner to surround the entire first opening from the side of the internal space, and a lower cylindrical sealing member arranged to be movable in the vertical direction while having its outer peripheral surface overlapped with the inner peripheral surface of the upper sealing member in the vertical direction, and configured so that the lower sealing member and the upper sealing member can surround the space from the processing space surrounded by the anti-scattering mechanism toward the central part of the first opening to form an environmental gas separation space separated from the surroundings; an outer rectifying member, which is mounted on the upper sealing member in such a manner as to rectify the gas passing between the upper sealing member and the lower sealing member and to make the gas flow downward along the outer side surface of the lower sealing member; An inner rectifying member, which is arranged to be able to be raised and lowered integrally with the lower sealing member in such a manner as to rectify the gas passing through the inner side of the lower sealing member and allow the gas to flow to the processing space; A lifting mechanism that enables the lower sealing member to be lifted and lowered; and A control unit controls the lifting mechanism in the following manner: the environmental gas separation space is formed by lowering the lower sealed component in the vertical direction to a prescribed lower limit position, and on the other hand, the lower sealed component is raised to a retreat position vertically above the lower limit position so as to be able to enter and exit the processing space, and the flow rate of the gas flowing downward along the outer side surface of the lower sealed component is increased.

2. The substrate processing apparatus according to claim 1, wherein: When the flow rate per unit time of the gas flowing into the processing space through the inner rectifying member is defined as the inner flow rate, and the flow rate per unit time of the gas flowing along the outer side surface of the lower sealing member through the outer rectifying member is defined as the outer flow rate, The inner flow regulating member and the outer flow regulating member are processed so that when the lower sealing member is located at the lower limit position, the inner flow rate is larger than the outer flow rate.

3. The substrate processing apparatus according to claim 2, wherein: The outer rectifying member is a punching plate having a plurality of outer through holes arranged on an annular plate surrounding the lower sealing member; The inner flow regulating member is a punched plate having inner through holes smaller in diameter than the outer through holes and larger in number than the outer through holes, on a plate surrounded by the lower sealing member.

4. The substrate processing apparatus according to claim 1, wherein: have: a baffle that opens and closes a second opening disposed on a side wall of the chamber; The control unit controls the baffle in the following manner: In order to move the substrate into or out of the substrate holding portion via the second opening, the lower sealing member is located at the lower limit position until the baffle completes opening of the second opening. On the other hand, after the second opening is opened, the lower sealing member moves to the retreat position.

5. The substrate processing apparatus according to claim 1, wherein: have: a centering mechanism for performing a centering process for aligning the center of the substrate with the rotation axis by bringing an abutting portion into contact with the substrate mounted on the substrate holding portion so as to be movably disposed in a horizontal direction; The control unit controls the lifting mechanism so that the lower sealing member is located at the retreat position when the centering process is performed.

6. The substrate processing apparatus according to claim 1, wherein: have: a substrate observation mechanism that performs an observation process of observing a peripheral portion of the substrate held by the substrate holding portion; The control unit controls the lifting mechanism so that the lower sealing member is located at the retreat position when the observation process is performed.

7. The substrate processing apparatus according to claim 1, wherein: have: a cover member that is detachably attachable to the side wall of the chamber so as to close a third opening provided on the side wall of the chamber; The control unit controls the lifting mechanism in the following manner: in order for the operator to enter and exit the internal space for maintenance, the lower sealing member is located at the lower limit position until the cover member is removed from the side wall of the chamber; on the other hand, after the removal of the cover member is completed, the lower sealing member moves to the retreat position.

8. The substrate processing apparatus according to claim 1, wherein: The gas supply unit includes a circular gas outlet when viewed from the side of the atmosphere gas separation mechanism and viewed vertically upward.

9. The substrate processing apparatus according to any one of claims 1 to 8, characterized in that: have: a first exhaust pipe for exhausting the processing space; a second exhaust pipe for exhausting the space other than the processing space in the internal space; an exhaust unit that exhausts the internal space through the first exhaust pipe and the second exhaust pipe; and an exhaust flow rate adjustment unit capable of adjusting a ratio between a first exhaust flow rate exhausted through the first exhaust pipe and a second exhaust flow rate exhausted through the second exhaust pipe; The exhaust flow rate per unit time of the exhaust portion is maintained constant; and The control unit controls the exhaust flow rate adjustment unit in the following manner: when the lower sealing member is located at the lower limit position, the ratio of the first exhaust flow rate becomes higher, and on the other hand, when the lower sealing member is located at the retreat position, the ratio of the second exhaust flow rate becomes higher.

10. A substrate processing method, characterized in that: The substrate is subjected to substrate processing by supplying a processing liquid to the substrate from the outer circumference of the rotating substrate surrounded by the anti-scattering mechanism in the inner space of the chamber to which the gas is supplied through the first opening provided in the ceiling wall of the chamber, The substrate processing method has the following features: The first step comprises: making the outer peripheral surface of the lower sealing member having a cylindrical shape overlap with the inner peripheral surface of the upper sealing member having a cylindrical shape installed on the top wall in a manner of surrounding the entire first opening from the internal space side in the vertical direction, and lowering the lower sealing member in the vertical direction to a predetermined lower limit position, thereby surrounding the space of the processing space surrounded by the free anti-scattering mechanism toward the central part of the first opening to form an environmental gas separation space separated from the surroundings; and The second step is to eliminate the formation of the above-mentioned environmental gas separation space and form a gap between the above-mentioned lower sealing member and the above-mentioned anti-scattering mechanism in the vertical direction by raising the above-mentioned lower sealing member to a retreat position vertically above the above-mentioned lower limit position; The first step includes the following steps: rectifying the gas passing through the upper sealing member and the lower sealing member by an outer rectifying member installed on the upper sealing member so that the gas flows downward along the outer side surface of the lower sealing member, and rectifying the gas passing through the inner side of the lower sealing member by an inner rectifying member movably provided integrally with the lower sealing member so that the gas flows to the processing space; The second step includes the following step: as the inner rectifying member and the lower sealing member rise integrally, the flow rate of the gas flowing downward along the outer side surface of the lower sealing member is increased compared with the first step.

11. A substrate processing system, characterized in that: have: A plurality of substrate processing apparatuses according to any one of claims 1 to 8; and An exhaust device, which is connected in parallel with the plurality of substrate processing devices to exhaust the plurality of internal spaces simultaneously; Each of the plurality of substrate processing devices comprises: a first exhaust pipe connecting the processing space and the exhaust device; a second exhaust pipe connecting the space in the internal space other than the processing space to the exhaust device; and an exhaust flow rate adjustment unit capable of adjusting a ratio of a first exhaust flow rate exhausted through the first exhaust pipe and a second exhaust flow rate exhausted through the second exhaust pipe; and The control unit controls the exhaust flow adjustment unit in the following manner: when the lower sealing component is located at the lower limit position, the ratio of the first exhaust flow rate is increased; on the other hand, when the lower sealing component is located at the retreat position, the ratio of the second exhaust flow rate is increased, thereby making the exhaust flow rate per unit time discharged from the internal space by the exhaust device constant.

12. The substrate processing system according to claim 11, wherein: The plurality of substrate processing devices are stacked and arranged in a vertical direction; The exhaust device is arranged above the substrate processing device located at the uppermost side in the vertical direction.

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