Polishing method of gallium antimonide wafer and gallium antimonide polished wafer

Abstract

The invention relates to the technical field of semiconductor material processing, in particular to a polishing method of a gallium antimonide wafer and a gallium antimonide polished wafer, and the polishing method of the gallium antimonide wafer comprises the following steps: carrying out film pasting treatment and thinning treatment on the ground and corroded gallium antimonide wafer; carrying out double-sided rough polishing treatment on the thinned gallium antimonide wafer; performing single-sided fine polishing treatment on the gallium antimonide wafer subjected to double-sided rough polishing treatment; and cleaning and drying the gallium antimonide wafer subjected to single-side fine polishing treatment to obtain the gallium antimonide polished wafer. The polishing efficiency of the gallium antimonide wafer is improved, the flatness of the gallium antimonide polished wafer is improved, and therefore the quality of the gallium antimonide polished wafer is improved.

Description

Technical Field

[0001] The present application relates to the technical field of semiconductor material processing, and in particular to a gallium antimonide wafer polishing method and a gallium antimonide polishing sheet. Background Art

[0002] As a typical III-V compound semiconductor material, GaSb can cover the wavelength range from near infrared to far infrared, and is an ideal substrate material for the preparation of antimonide infrared optoelectronic devices. However, GaSb is chemically very active, the surface is easily oxidized, the material is brittle, soft, and prone to chemical corrosion defects, making it difficult to process high-quality wafer surfaces.

[0003] Chemical mechanical polishing technology is an ultra-precision processing method with low defect density and an important processing step that determines the surface quality of gallium antimonide wafers. Processing the surface of gallium antimonide wafers through chemical mechanical polishing technology can make gallium antimonide wafers have high shape accuracy and surface accuracy. In the related art, the existing chemical mechanical polishing technology is to use a single-sided polishing machine to perform two single polishing processes on gallium antimonide wafers to achieve double-sided polishing of gallium antimonide wafers. In the process of double-sided polishing of gallium antimonide wafers using a single-sided polishing machine, it is also necessary to apply wax and wax cleaning on the gallium antimonide wafers to reduce the polishing efficiency of the gallium antimonide wafers. In addition, sliding the gallium antimonide wafer during the waxing and wax cleaning processes can easily cause scratches on the surface of the gallium antimonide wafer. The uneven thickness of the wax layer can easily lead to poor flatness of the gallium antimonide wafer and easy collapse of the edge; the wax contacting the surface of the gallium antimonide wafer will cause contamination of the gallium antimonide wafer, resulting in local oxidation of the crystal surface, etc., making the gallium antimonide polishing wafer of poor quality and reducing the user experience. Summary of the invention

[0004] The present application aims to solve at least one of the technical problems existing in the prior art. To this end, the present application provides a method for polishing a gallium antimonide wafer and a gallium antimonide polishing sheet, which are conducive to improving the polishing efficiency of the gallium antimonide wafer, improving the flatness of the gallium antimonide polishing sheet, and thus improving the quality of the gallium antimonide polishing sheet.

[0005] In a first aspect, an embodiment of the present application provides a method for polishing a gallium antimonide wafer, comprising:

[0006] The ground and etched GaSb wafers are subjected to film lamination and thinning treatments;

[0007] Performing double-sided rough polishing on the thinned GaSb wafer;

[0008] Performing single-side fine polishing on the gallium antimonide wafer that has been subjected to double-side rough polishing;

[0009] The gallium antimonide wafer that has been subjected to single-side fine polishing is cleaned and dried to obtain a gallium antimonide polished wafer.

[0010] According to some embodiments of the present application, the film-mounting and thinning treatment of the ground and corroded gallium antimonide wafer includes:

[0011] Adsorbing the first surface of the gallium antimonide wafer onto the first blue film, and placing the gallium antimonide wafer on a ceramic plate;

[0012] Fixing the ceramic disk on a workbench of a thinning machine, thinning the second surface of the gallium antimonide wafer, and removing the gallium antimonide wafer;

[0013] Adsorbing the second surface of the gallium antimonide wafer onto the second blue film, and placing the gallium antimonide wafer on the ceramic plate;

[0014] The first surface of the gallium antimonide wafer is thinned, and the gallium antimonide wafer is removed.

[0015] According to some embodiments of the present application, a vacuum pipeline is provided inside the ceramic disk, and the vacuum pipeline is used to provide a vacuum environment. The method further includes:

[0016] Connecting the vacuum pipeline to start the vacuum environment, so as to adsorb the first surface of the gallium antimonide wafer onto the ceramic disk through the first blue film;

[0017] Using the thinning machine to thin the second surface of the gallium antimonide wafer;

[0018] Closing the vacuum line to stop the vacuum environment, pulling the first blue film apart, so that the first blue film and the gallium antimonide wafer are separated from the ceramic disk;

[0019] Soaking the first blue film and the gallium antimonide wafer in deionized water for a first preset time;

[0020] Taking the first blue film and the gallium antimonide wafer out of the ionized water, and pulling apart the first blue film to separate the first blue film from the gallium antimonide wafer;

[0021] The gallium antimonide wafer is cleaned with deionized water and dried.

[0022] According to some embodiments of the present application, the vacuum pipeline is connected to start a vacuum environment so as to adsorb the second surface of the gallium antimonide wafer onto the ceramic disk through the second blue film;

[0023] Using the thinning machine to thin the first surface of the gallium antimonide wafer;

[0024] Closing the vacuum line to stop the vacuum environment, pulling the second blue film apart, so that the second blue film and the gallium antimonide wafer are separated from the ceramic disk;

[0025] Soaking the second blue film and the gallium antimonide wafer in deionized water for a second preset time;

[0026] Taking the second blue film and the gallium antimonide wafer out of the ionized water, and pulling apart the second blue film to separate the second blue film from the gallium antimonide wafer;

[0027] The gallium antimonide wafer is cleaned with deionized water and dried.

[0028] According to some embodiments of the present application, the double-sided rough polishing of the thinned gallium antimonide wafer includes:

[0029] The GaSb wafer that has been thinned is placed in the planetary wheel of the double-sided polishing machine;

[0030] The double-sided polishing machine is set to perform rough polishing on the thinned gallium antimonide wafer at a first preset polishing speed and a first polishing amount.

[0031] According to some embodiments of the present application, the first preset polishing speed is 20 μm / h, and the first polishing amount is 20 μm.

[0032] According to some embodiments of the present application, a vacuum pipeline is provided inside the ceramic disk, and the vacuum pipeline is used to provide a vacuum environment. The single-sided fine polishing of the rough-polished gallium antimonide wafer includes:

[0033] Placing the second surface of the roughly polished GaSb wafer on the third blue film and pressing it so that the second surface of the roughly polished GaSb wafer is adsorbed on the third blue film, and placing the roughly polished GaSb wafer on a ceramic plate;

[0034] Fixing the ceramic disk on a workbench of a single-side polishing machine, connecting a vacuum pipeline to start a vacuum environment, so that the second surface of the gallium antimonide wafer that has been rough-polished is adsorbed on the ceramic disk through the third blue film;

[0035] The single-side polishing machine is set to perform single-side fine polishing on the rough-polished gallium antimonide wafer at a second preset polishing speed and a first preset distance.

[0036] According to some embodiments of the present application, the second preset polishing speed is 0.25 μm / min, and the first preset distance is 6 μm.

[0037] According to some embodiments of the present application, the vacuum pipeline is closed to stop the vacuum environment, and the third blue film is pulled apart to separate the third blue film and the gallium antimonide wafer subjected to single-sided fine polishing from the ceramic disk;

[0038] Soaking the third blue film and the finely polished gallium antimonide wafer in deionized water for a third preset time;

[0039] Taking the third blue film and the finely polished gallium antimonide wafer out of the ionized water, and pulling apart the third blue film to separate the third blue film from the finely polished gallium antimonide wafer;

[0040] The gallium antimonide wafer that has been finely polished is cleaned with deionized water and dried to obtain a gallium antimonide polished wafer.

[0041] In a second aspect, an embodiment of the present application provides a gallium antimonide polishing sheet, which is prepared by the method described in the technical solution of the first aspect above.

[0042] A gallium antimonide wafer polishing method and a gallium antimonide polishing sheet provided in an embodiment of the present application have at least one of the following advantages or beneficial effects: first, the gallium antimonide wafer that has been ground and corroded is subjected to a film-mounting treatment and a thinning treatment. By thinning the gallium antimonide wafer, a portion of the rough polishing amount of the polishing equipment can be removed, the flatness of the gallium antimonide wafer is improved, the rough polishing time is reduced, and the polishing efficiency of the gallium antimonide wafer is improved; by subjecting the gallium antimonide wafer to a film-mounting treatment, wax coating treatment and wax cleaning treatment are replaced, colloid residue is avoided, thereby avoiding the situation where wax pollution causes local oxidation of the surface of the gallium antimonide wafer, and the quality of the gallium antimonide polishing sheet is improved. Afterwards, a double-sided polishing machine is used to perform double-sided rough polishing on the thinned GaSb wafer instead of a single-sided polishing machine that performs two single polishings on the GaSb wafer, thereby further improving the polishing efficiency of the GaSb wafer. The GaSb wafer that has undergone double-sided rough polishing is subjected to single-sided fine polishing to further improve the flatness and surface accuracy of the GaSb wafer. Finally, the GaSb wafer that has undergone single-sided fine polishing is cleaned and dried to obtain a GaSb polished wafer. The polished GaSb polished wafer has good flatness, thereby improving the quality of the GaSb polished wafer and improving the user experience.

[0043] Other features and advantages of the present application will be described in the following description, and partly become apparent from the description, or understood by practicing the present application. The purpose and other advantages of the present application can be realized and obtained by the structures specifically pointed out in the description, claims and drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] Figure 1 It is a flow chart of a polishing method of a gallium antimonide wafer provided in an embodiment of the present application;

[0045] Figure 2 It is a flow chart of a method for performing film lamination and thinning on a ground and corroded gallium antimonide wafer provided in an embodiment of the present application;

[0046] Figure 3 is a flow chart of a method for thinning the second surface of a gallium antimonide wafer provided in an embodiment of the present application;

[0047] Figure 4 is a flow chart of a method for thinning a first surface of a gallium antimonide wafer provided in an embodiment of the present application;

[0048] Figure 5 It is a flow chart of a method for performing double-sided rough polishing on a thinned gallium antimonide wafer provided in an embodiment of the present application;

[0049] Figure 6 It is a flow chart of a method for single-sided fine polishing of a gallium antimonide wafer that has been subjected to rough polishing, provided in an embodiment of the present application;

[0050] Figure 7 This is a flow chart of a method for polishing a gallium antimonide wafer provided in another embodiment of the present application. DETAILED DESCRIPTION

[0051] This section will describe in detail the specific embodiments of the present application. The preferred embodiments of the present application are shown in the accompanying drawings. The purpose of the accompanying drawings is to supplement the description of the text part of the specification with graphics, so that people can intuitively and vividly understand each technical feature and the overall technical solution of the present application, but it cannot be understood as a limitation on the scope of protection of the present application.

[0052] In the description of this application, "several" means one or more, "more" means more than two, "greater than", "less than", "exceed", etc. are understood to exclude the number itself, "above", "below", "within", etc. are understood to include the number itself, "any one" means one or more, "at least one of the following" and similar expressions refer to any combination of these items, including any combination of single or plural items. If there is a description of the first and the second, it is only used for the purpose of distinguishing the technical features, and cannot be understood as indicating or implying the relative importance or implicitly indicating the number of the indicated technical features or implicitly indicating the order of the indicated technical features.

[0053] It should be noted that the terms such as setting, installing, and connecting in the embodiments of the present application should be interpreted in a broad sense, and the technical personnel in the relevant technical field can reasonably determine the specific meanings of the above terms in the embodiments of the present application in combination with the specific content of the technical solution. For example, the term "connection" can be a mechanical connection, an electrical connection, or mutual communication; it can be directly connected or indirectly connected through an intermediate medium.

[0054] It should be noted that the technical features involved in the various embodiments of the present application described below can be combined with each other as long as they do not conflict with each other.

[0055] As a typical III-V compound semiconductor material, GaSb can cover the wavelength range from near infrared to far infrared, and is an ideal substrate material for the preparation of antimonide infrared optoelectronic devices. However, GaSb is chemically very active, the surface is easily oxidized, the material is brittle, soft, and prone to chemical corrosion defects, making it difficult to process high-quality wafer surfaces.

[0056] Chemical mechanical polishing technology is an ultra-precision processing method with low defect density and an important processing step that determines the surface quality of gallium antimonide wafers. Processing the surface of gallium antimonide wafers through chemical mechanical polishing technology can make gallium antimonide wafers have high shape accuracy and surface accuracy. In the related art, the existing chemical mechanical polishing technology is to use a single-sided polishing machine to perform two single polishing processes on gallium antimonide wafers to achieve double-sided polishing of gallium antimonide wafers. In the process of double-sided polishing of gallium antimonide wafers using a single-sided polishing machine, it is also necessary to apply wax and wax cleaning on the gallium antimonide wafers to reduce the polishing efficiency of the gallium antimonide wafers. In addition, sliding the gallium antimonide wafer during the waxing and wax cleaning processes can easily cause scratches on the surface of the gallium antimonide wafer. The uneven thickness of the wax layer can easily lead to poor flatness of the gallium antimonide wafer and easy collapse of the edge; the wax contacting the surface of the gallium antimonide wafer will cause contamination of the gallium antimonide wafer, resulting in local oxidation of the crystal surface, etc., making the gallium antimonide polishing wafer of poor quality and reducing the user experience.

[0057] Based on this, the embodiments of the present application provide a gallium antimonide wafer polishing method and a gallium antimonide polishing sheet, which are beneficial to improving the polishing efficiency of the gallium antimonide wafer, improving the flatness of the gallium antimonide polishing sheet and thus improving the quality of the gallium antimonide polishing sheet.

[0058] The polishing method of the gallium antimonide wafer and the gallium antimonide polishing sheet provided in the embodiments of the present application will be further described with reference to the accompanying drawings.

[0059] Reference Figure 1 As shown, Figure 1 1 is a flow chart of a method for polishing a gallium antimonide wafer provided in an embodiment of the present application. The method for polishing a gallium antimonide wafer includes but is not limited to steps S100 to S400. Specifically,

[0060] Step S100: performing film lamination and thinning processing on the ground and etched GaSb wafer;

[0061] Step S200: performing double-sided rough polishing on the thinned GaSb wafer;

[0062] Step S300: performing single-side fine polishing on the gallium antimonide wafer that has been subjected to double-side rough polishing;

[0063] Step S400: cleaning and drying the gallium antimonide wafer that has been subjected to single-side fine polishing to obtain a gallium antimonide polished wafer.

[0064] In some embodiments of the present application, a polishing method for a gallium antimonide wafer includes: first, performing a film-mounting treatment and a thinning treatment on the gallium antimonide wafer that has been ground and corroded. By thinning the gallium antimonide wafer, a portion of the rough polishing amount of the polishing equipment can be removed, the flatness of the gallium antimonide wafer can be improved, the rough polishing time can be reduced, and the polishing efficiency of the gallium antimonide wafer can be improved; by performing a film-mounting treatment on the gallium antimonide wafer, the wax coating treatment and the wax cleaning treatment can be replaced to avoid colloid residue, thereby avoiding wax contamination that causes local oxidation of the surface of the gallium antimonide wafer, and improving the quality of the gallium antimonide polishing wafer. Afterwards, a double-sided polishing machine is used to perform double-sided rough polishing on the thinned GaSb wafer instead of a single-sided polishing machine that performs two single polishings on the GaSb wafer, thereby further improving the polishing efficiency of the GaSb wafer. The GaSb wafer that has undergone double-sided rough polishing is subjected to single-sided fine polishing to further improve the flatness and surface accuracy of the GaSb wafer. Finally, the GaSb wafer that has undergone single-sided fine polishing is cleaned and dried to obtain a GaSb polished wafer. The polished GaSb polished wafer has good flatness, thereby improving the quality of the GaSb polished wafer and improving the user experience.

[0065] Reference Figure 2 As shown, Figure 2 1 is a flow chart of a method for performing film lamination and thinning on a ground and etched GaSb wafer provided by an embodiment of the present application. The method for performing thinning on a ground and etched GaSb wafer includes but is not limited to steps S110 to S140. Specifically,

[0066] Step S110: adsorbing the first surface of the GaSb wafer onto the first blue film, and placing the GaSb wafer on a ceramic plate;

[0067] Step S120: fix the ceramic plate on the workbench of the thinning machine, perform thinning on the second side of the GaSb wafer, and remove the GaSb wafer;

[0068] Step S130: adsorbing the second surface of the GaSb wafer onto the second blue film, and placing the GaSb wafer on the ceramic plate;

[0069] Step S140: thinning the first surface of the GaSb wafer and removing the GaSb wafer.

[0070] In some embodiments of the present application, the method for filming and thinning the over-grinded and corroded GaSb wafer includes: adsorbing the first side of the over-grinded and corroded GaSb wafer on a first blue film, the first blue film is a sticky film for fixing the GaSb wafer, by adsorbing the first side of the GaSb wafer on the first blue film, the wafer can be easily fixed to prevent the GaSb wafer from moving or being damaged during subsequent processing, and by adsorbing the first side of the GaSb wafer on the first blue film instead of waxing and wax cleaning, colloid residue can be avoided, thereby avoiding wax contamination leading to local oxidation of the surface of the GaSb wafer, and improving the quality of the GaSb polishing sheet. The GaSb wafer is placed and adsorbed on a ceramic disk, which is usually used to carry the GaSb wafer. The ceramic disk has good thermal stability and mechanical stability, and can provide stable support for the GaSb wafer during the thinning process. The ceramic disc is fixed on the workbench of the thinning machine. By fixing the ceramic disc on the workbench, the stability and consistency of the GaSb wafer can be ensured during the thinning process. The second side of the GaSb wafer is thinned by the thinning machine. The thinning treatment of the second side of the GaSb wafer is to remove part of the material on the surface of the GaSb wafer by mechanical or chemical methods to achieve the required thickness and surface flatness. After the thinning is completed, the GaSb wafer is removed from the ceramic disc for subsequent processing or testing. Then the GaSb wafer is removed, and the second side of the GaSb wafer is adsorbed on the second blue film. By adsorbing the second side of the GaSb wafer on the second blue film instead of wax coating and wax cleaning, colloid residue can be avoided, thereby avoiding wax contamination leading to local oxidation of the surface of the GaSb wafer, and further improving the quality of the GaSb polishing sheet; the GaSb wafer is adsorbed on the ceramic disc, and the other side of the GaSb wafer is prepared for thinning. The first side of the GaSb wafer is thinned by the thinning machine to achieve the required thickness and surface flatness of the GaSb wafer. Finally, the GaSb wafer is removed, completing the entire process of double-sided thinning of the GaSb wafer.

[0071] By thinning the GaSb wafer, a part of the rough polishing amount of the polishing equipment can be removed, the flatness of the GaSb wafer can be improved, the rough polishing time can be reduced, and the polishing efficiency of the GaSb wafer can be improved; by adsorbing the first and second surfaces of the GaSb wafer on the blue film, replacing the wax coating and wax cleaning processes, avoiding colloid residue, thereby avoiding wax contamination leading to local oxidation of the surface of the GaSb wafer, and improving the quality of the GaSb polished wafer. Afterwards, the double-sided rough polishing of the thinned GaSb wafer is performed by a double-sided polishing machine instead of the single-sided polishing machine performing two single polishing processes on the GaSb wafer, further improving the polishing efficiency of the GaSb wafer.

[0072] Reference Figure 3 As shown, Figure 31 is a flow chart of a method for thinning the second side of a gallium antimonide wafer provided in an embodiment of the present application. The method for thinning the second side of a gallium antimonide wafer includes but is not limited to steps S121 to S126. Specifically,

[0073] Step S121: connecting the vacuum pipeline to start the vacuum environment, so as to adsorb the first surface of the GaSb wafer onto the ceramic plate through the first blue film;

[0074] Step S122: using a thinning machine to thin the second surface of the gallium antimonide wafer;

[0075] Step S123: closing the vacuum pipeline to stop the vacuum environment, and pulling the first blue film apart to separate the first blue film and the gallium antimonide wafer from the ceramic plate;

[0076] Step S124: placing the first blue film and the gallium antimonide wafer in deionized water and soaking them for a first preset time;

[0077] Step S125: taking the first blue film and the gallium antimonide wafer out of the ionized water, and pulling the first blue film apart to separate the first blue film and the gallium antimonide wafer;

[0078] Step S126: using deionized water to clean the GaSb wafer and then drying it.

[0079] In some embodiments of the present application, a vacuum pipeline is provided inside the ceramic disk, and the vacuum pipeline is used to provide a vacuum environment. The method for thinning the second side of the gallium antimonide wafer includes: connecting the vacuum pipeline to start the vacuum environment, and forming a negative pressure environment in the vacuum pipeline by starting the vacuum environment, ensuring that the first blue film can be firmly adsorbed on the ceramic disk. In the vacuum environment, the first blue film will fit tightly on the ceramic disk, thereby fixing the first side of the gallium antimonide wafer on the ceramic disk. This adsorption method can prevent the gallium antimonide wafer from moving or falling off during the thinning process. The second side of the GaSb wafer is thinned by a thinning machine. After the first side of the GaSb wafer is fixed, the second side of the GaSb wafer is thinned mechanically or chemically by a thinning machine to achieve the desired thickness and surface flatness. After the thinning is completed, the vacuum pipeline is closed to stop the vacuum environment, so that the pressure in the pipeline returns to a normal state. After the vacuum environment is released, the adsorption force between the first blue film and the ceramic disk is weakened, and the first blue film is pulled apart to separate the first blue film and the GaSb wafer from the ceramic disk, and the first blue film and the wafer can be easily removed from the ceramic disk. The first blue film and the GaSb wafer are placed in deionized water for soaking for a first preset time. The purpose of soaking the first blue film and the GaSb wafer in deionized water is to remove the residues and impurities on the surface of the GaSb wafer. After the soaking is completed, the first blue film and the GaSb wafer are taken out of the deionized water, and the first blue film is pulled apart to separate the first blue film and the GaSb wafer. Finally, the GaSb wafer is thoroughly cleaned with deionized water to ensure that the surface of the GaSb wafer is clean and free of impurities. After cleaning, the GaSb wafer is dried for subsequent processing or testing.

[0080] The second side of the gallium antimonide wafer is thinned by the above method, ensuring that the gallium antimonide wafer is not damaged during the thinning and cleaning process, and achieving the required surface quality and cleanliness. The first side of the gallium antimonide wafer is adsorbed on a blue film to replace the wax coating and wax cleaning processes, thereby avoiding colloid residue and thus avoiding wax contamination that causes local oxidation of the surface of the gallium antimonide wafer, thereby improving the quality of the gallium antimonide polishing wafer.

[0081] It should be noted that, in some embodiments of the present application, the first preset time is 10 seconds. Those skilled in the art can set the size of the first preset time according to actual conditions, and the embodiments of the present application do not limit the size of the first preset time.

[0082] Reference Figure 4 As shown, Figure 4 1 is a flow chart of a method for thinning the first side of a gallium antimonide wafer provided in an embodiment of the present application. The method for thinning the first side of a gallium antimonide wafer includes but is not limited to steps S141 to S146. Specifically,

[0083] Step S141: connecting the vacuum pipeline to start a vacuum environment, so as to adsorb the second surface of the gallium antimonide wafer onto the ceramic plate through the second blue film;

[0084] Step S142: using a thinning machine to thin the first surface of the gallium antimonide wafer;

[0085] Step S143: closing the vacuum pipeline to stop the vacuum environment, and pulling the second blue film apart to separate the second blue film and the gallium antimonide wafer from the ceramic plate;

[0086] Step S144: placing the second blue film and the gallium antimonide wafer in deionized water and soaking them for a second preset time;

[0087] Step S145: taking the second blue film and the gallium antimonide wafer out of the ionized water, and pulling apart the second blue film to separate the second blue film and the gallium antimonide wafer;

[0088] Step S146: using deionized water to clean the GaSb wafer and then drying it.

[0089] In some embodiments of the present application, a vacuum pipeline is provided inside the ceramic disk, and the vacuum pipeline is used to provide a vacuum environment. The method for thinning the first side of the gallium antimonide wafer includes: connecting the vacuum pipeline to start the vacuum environment, and forming a negative pressure environment in the vacuum pipeline by starting the vacuum environment, ensuring that the second blue film can be firmly adsorbed on the ceramic disk. In the vacuum environment, the second blue film will fit tightly on the ceramic disk, thereby fixing the second side of the gallium antimonide wafer on the ceramic disk. This adsorption method can prevent the gallium antimonide wafer from moving or falling off during the thinning process. The first side of the GaSb wafer is thinned by a thinning machine. After the second side of the GaSb wafer is fixed, the first side of the GaSb wafer is thinned mechanically or chemically by a thinning machine to achieve the desired thickness and surface flatness. After the thinning is completed, the vacuum pipeline is closed to stop the vacuum environment, so that the pressure in the pipeline returns to a normal state. After the vacuum environment is released, the adsorption force between the second blue film and the ceramic disk is weakened, and the second blue film is pulled apart to separate the first blue film and the GaSb wafer from the ceramic disk, and the second blue film and the wafer can be easily removed from the ceramic disk. The second blue film and the GaSb wafer are placed in deionized water for soaking for a second preset time. The purpose of soaking the second blue film and the GaSb wafer in deionized water is to remove the residue and impurities on the surface of the GaSb wafer. After the soaking is completed, the second blue film and the GaSb wafer are taken out of the deionized water, and the second blue film is pulled apart to separate the second blue film and the GaSb wafer. Finally, the GaSb wafer is thoroughly cleaned with deionized water to ensure that the surface of the GaSb wafer is clean and free of impurities. After cleaning, the GaSb wafer is dried for subsequent processing or testing.

[0090] The first side of the gallium antimonide wafer is thinned by the above method, ensuring that the gallium antimonide wafer is not damaged during the thinning and cleaning process, and achieving the required surface quality and cleanliness. The second side of the gallium antimonide wafer is adsorbed on a blue film to replace the wax coating and wax cleaning processes, thereby avoiding colloid residue and thus avoiding wax contamination that causes local oxidation of the surface of the gallium antimonide wafer, thereby improving the quality of the gallium antimonide polishing wafer.

[0091] It should be noted that in some embodiments of the present application, the second preset time is 10 seconds. Those skilled in the art can set the size of the second preset time according to actual conditions. The embodiments of the present application do not limit the size of the first preset time.

[0092] Reference Figure 5 As shown, Figure 5 1 is a flow chart of a method for performing double-sided rough polishing on a thinned GaSb wafer provided in an embodiment of the present application. The method for performing double-sided rough polishing on a thinned GaSb wafer includes but is not limited to steps S210 to S220. Specifically,

[0093] Step S210: placing the GaSb wafer that has undergone thinning treatment in a planetary wheel of a double-sided polishing machine;

[0094] Step S220: setting a double-sided polishing machine to perform rough polishing on the thinned GaSb wafer at a first preset polishing speed and a first polishing amount.

[0095] In some embodiments of the present application, a method for performing double-sided rough polishing on a thinned GaSb wafer includes: placing the thinned GaSb wafer in a planetary wheel of a double-sided polisher to ensure that the GaSb wafer is positioned correctly so that the GaSb wafer can evenly contact the polishing disk during the polishing process. The polisher is also provided with a fixture or a fixing device to fix the polisher wafer to prevent the polisher from moving or falling off during the polishing process. The double-sided polisher is set to perform rough polishing on the thinned GaSb wafer at a first preset polishing speed and a first drop amount. The main purpose of the rough polishing stage is to remove larger defects and unevenness on the surface of the GaSb wafer, so a higher speed is required to improve the polishing efficiency. The specific polishing speed needs to be set according to the material properties and surface conditions of the GaSb wafer to ensure effective polishing without damaging the GaSb wafer; the first drop amount refers to the amount of GaSb wafer surface material that needs to be removed in the rough polishing stage. The setting of the first drop amount depends on the initial surface condition of the GaSb wafer and the required polishing effect; a larger drop amount can quickly improve the surface flatness of the GaSb wafer, but it will also increase material loss, so a balance needs to be found between efficiency and loss.

[0096] In one embodiment, the first preset polishing speed is set to 20 μm / h, and the first drop is set to 20 μm. By setting the first preset polishing speed to 20 μm / h and the first drop to 20 μm, the GaSb wafer that has been thinned can be roughly polished effectively, laying the foundation for subsequent fine polishing and further processing. Rough polishing can significantly improve the surface flatness and finish of the GaSb wafer, and improve the application performance of the GaSb wafer in semiconductor devices.

[0097] It should be noted that the first preset polishing speed and the first polishing amount are set according to the material properties and surface conditions of the gallium antimonide wafer, and the embodiment of the present application does not limit the first preset polishing speed and the first polishing amount.

[0098] Reference Figure 6 As shown, Figure 6 1 is a flow chart of a method for single-sided fine polishing of a gallium antimonide wafer that has been subjected to rough polishing provided by an embodiment of the present application. The single-sided fine polishing of the gallium antimonide wafer that has been subjected to rough polishing includes but is not limited to steps S310 to S330. Specifically,

[0099] Step S310: placing the second surface of the roughly polished GaSb wafer on the third blue film and pressing it so that the second surface of the roughly polished GaSb wafer is adsorbed on the third blue film, and placing the roughly polished GaSb wafer on the ceramic plate;

[0100] Step S320: fix the ceramic disk on the workbench of the single-side polishing machine, connect the vacuum pipeline to start the vacuum environment, and adsorb the second side of the gallium antimonide wafer that has been roughly polished onto the ceramic disk through the third blue film;

[0101] Step S330: setting a single-side polishing machine to perform single-side fine polishing on the rough-polished gallium antimonide wafer at a second preset polishing speed and a first preset distance.

[0102] In some embodiments of the present application, single-sided fine polishing of the rough-polished GaSb wafer includes: placing the second side of the rough-polished GaSb wafer on the third blue film to prevent the wafer from moving or falling off, ensuring the stability and consistency of polishing, pressing the third blue film, and applying a certain pressure to make the second side of the GaSb wafer fit closely with the third blue film. This step is to ensure that the GaSb wafer can be firmly fixed on the third blue film during the subsequent polishing process to avoid displacement of the GaSb wafer due to vibration or friction. The rough-polished GaSb wafer is placed on a ceramic disk, and the viscosity of the third blue film allows the GaSb wafer to be firmly adsorbed thereon, thereby maintaining stability during the polishing process.

[0103] The single-side polisher is a device specially used for polishing a single side of a GaSb wafer. Unlike a double-side polisher, a single-side polisher only polishes one surface of a GaSb wafer and is suitable for occasions where a specific surface needs to be finely processed. The ceramic disc is firmly fixed on the workbench of the single-side polisher to ensure the stability and consistency of the GaSb wafer during the polishing process. A special clamp or fixture is used to fix the ceramic disc to prevent the GaSb from moving or falling off during the polishing process. By starting the vacuum environment, a negative pressure environment is formed in the pipeline to ensure that the GaSb wafer can be stably adsorbed on the ceramic disc during the subsequent polishing process, avoiding the displacement of the GaSb wafer due to vibration or friction, so that the second side of the GaSb wafer that has been rough-polished is firmly adsorbed on the ceramic disc through the third blue film, providing stable conditions for the subsequent fine polishing and ensuring the uniformity and consistency of the polishing effect.

[0104] The main purpose of the fine polishing stage is to remove tiny defects and scratches on the wafer surface and further improve the flatness and finish of the GaSb wafer surface, so a lower speed is required to achieve a finer polishing effect. The first preset distance refers to the distance between the polishing disc and the GaSb wafer. During the fine polishing process, maintaining an appropriate polishing distance can ensure the uniform distribution of the polishing liquid and the stability of the polishing pressure, thereby obtaining a better polishing effect.

[0105] In one embodiment, the second preset polishing speed is set to 0.25 μm / min and the first preset distance is set to 6 μm, which can effectively perform single-sided fine polishing on the gallium antimonide wafer that has been rough-polished, further improve the surface quality and smoothness of the gallium antimonide wafer, and meet the manufacturing requirements of high-precision semiconductor devices.

[0106] It should be noted that the second preset polishing speed and the first preset distance are set according to the material properties, surface conditions and thickness of the gallium antimonide wafer after rough polishing. The embodiment of the present application does not limit the second preset polishing speed and the first preset distance.

[0107] Reference Figure 7 As shown, Figure 7 is a flow chart of a method for polishing a gallium antimonide wafer provided by another embodiment of the present application. The method for polishing a gallium antimonide wafer includes but is not limited to steps S340 to S370. Specifically,

[0108] Step S340: closing the vacuum pipeline to stop the vacuum environment, pulling the third blue film apart, so that the third blue film and the gallium antimonide wafer subjected to single-side fine polishing are separated from the ceramic plate;

[0109] Step S350: placing the third blue film and the finely polished gallium antimonide wafer in deionized water for a third preset time;

[0110] Step S360: taking the third blue film and the finely polished gallium antimonide wafer out of the ionized water, and pulling the third blue film apart to separate the third blue film from the finely polished gallium antimonide wafer;

[0111] Step S370: using deionized water to clean and dry the fine-polished gallium antimonide wafer to obtain a gallium antimonide polished wafer.

[0112] In some embodiments of the present application, after the single-sided fine polishing of the gallium antimonide wafer is performed, the vacuum pipeline is closed to stop the vacuum environment, and the pressure in the pipeline is restored to a normal state to release the adsorption between the third blue film and the ceramic disk. After the vacuum environment is released, the adsorption force between the third blue film and the ceramic disk is weakened, and the gallium antimonide wafer can be easily separated from the ceramic disk by pulling the third blue film apart.

[0113] The third blue film and the GaSb wafer are soaked in deionized water to remove residues and impurities on the surface of the GaSb wafer. Deionized water is a specially treated water that does not contain ionic impurities and can effectively clean the surface of the GaSb wafer. After soaking, the third blue film and the GaSb wafer are removed from the deionized water for subsequent cleaning and drying. The third blue film is pulled apart to separate the GaSb wafer from the third blue film to ensure that the GaSb wafer will not be disturbed by the third blue film in subsequent processing. Finally, the GaSb wafer is thoroughly cleaned with deionized water to ensure that the surface of the GaSb wafer is clean and free of impurities, further improving the surface quality of the GaSb wafer to meet the requirements of high-precision semiconductor devices.

[0114] After cleaning, the GaSb wafer is dried to remove surface moisture. The drying method can be natural drying, blow drying, or use special drying equipment to ensure that there is no residual moisture on the surface of the GaSb wafer.

[0115] After the above treatment, the surface of the GaSb wafer reaches the required flatness and smoothness, becoming the final GaSb polished wafer, which can be used for subsequent semiconductor device manufacturing and application. The entire process is precisely controlled and operated to ensure that the GaSb wafer is not damaged during the polishing and cleaning process, and achieves the required surface quality and cleanliness, providing a high-quality material foundation for the manufacture of semiconductor devices.

[0116] It should be noted that in some embodiments of the present application, the third preset time is 10 seconds. The third preset time needs to be set according to specific process requirements to ensure that impurities on the surface of the gallium antimonide wafer are fully removed while avoiding damage to the gallium antimonide wafer due to excessive immersion. The embodiments of the present application do not limit the third preset time.

[0117] The embodiment of the present application also provides a gallium antimonide polishing sheet, which is prepared by adsorbing the first surface of a ground and corroded gallium antimonide wafer onto a first blue film, and then onto a special ceramic disk, thinning the second surface using a thinning machine, removing the gallium antimonide wafer, and then adsorbing the second surface of the gallium antimonide wafer onto a second blue film, and then onto a special ceramic disk, thinning the first surface using a thinning machine, removing the gallium antimonide wafer, and performing rough polishing on the first and second surfaces of the gallium antimonide wafer using a double-sided polishing machine, adsorbing the second surface of the gallium antimonide wafer onto a third blue film, and then adsorbing it onto a special ceramic disk, fine polishing the first surface of the gallium antimonide wafer using a single-sided polishing machine, and then removing the gallium antimonide wafer, rinsing with pure water, and completing polishing to obtain a gallium antimonide polishing sheet.

[0118] By thinning the GaSb wafer, part of the rough polishing amount of the polishing equipment can be removed, the flatness of the GaSb wafer can be improved, the rough polishing time can be reduced, and the polishing efficiency of the GaSb wafer can be improved; by applying a film to the GaSb wafer, instead of wax coating and wax cleaning, colloid residue can be avoided, thereby avoiding wax contamination and causing local oxidation of the surface of the GaSb wafer, and improving the quality of the GaSb polished wafer. Afterwards, the GaSb wafer that has been thinned is subjected to double-sided rough polishing by a double-sided polishing machine, replacing the single-sided polishing machine that performs two single polishing treatments on the GaSb wafer, further improving the polishing efficiency of the GaSb wafer, and the GaSb wafer that has been subjected to double-sided rough polishing is subjected to single-sided fine polishing, further improving the flatness and surface accuracy of the GaSb wafer. Finally, the GaSb wafer that has been subjected to single-sided fine polishing is cleaned and dried to obtain a GaSb polished wafer. The GaSb polished wafer has good flatness, improves the quality of the GaSb polished wafer, and improves the user experience.

[0119] Other features and advantages of the present application will be described in the following description, and partly become apparent from the description, or understood by practicing the present application. The purpose and other advantages of the present application can be realized and obtained by the structures specifically pointed out in the description, claims and drawings.

Claims

1. A method for polishing a gallium antimonide wafer, characterized in that: include: The ground and etched GaSb wafers are subjected to film lamination and thinning treatments; Performing double-sided rough polishing on the thinned GaSb wafer; Performing single-side fine polishing on the gallium antimonide wafer that has been subjected to double-side rough polishing; The gallium antimonide wafer that has been subjected to single-side fine polishing is cleaned and dried to obtain a gallium antimonide polished wafer.

2. The method for polishing a gallium antimonide wafer according to claim 1, characterized in that: The film-mounting and thinning treatment of the ground and corroded gallium antimonide wafer comprises: Adsorbing the first surface of the gallium antimonide wafer onto the first blue film, and placing the gallium antimonide wafer on a ceramic plate; Fixing the ceramic disk on a workbench of a thinning machine, thinning the second surface of the gallium antimonide wafer, and removing the gallium antimonide wafer; Adsorbing the second surface of the gallium antimonide wafer onto the second blue film, and placing the gallium antimonide wafer on the ceramic plate; The first surface of the gallium antimonide wafer is thinned, and the gallium antimonide wafer is removed.

3. The method for polishing a gallium antimonide wafer according to claim 2, characterized in that: A vacuum pipeline is provided inside the ceramic disk, and the vacuum pipeline is used to provide a vacuum environment. The method further includes: Connecting the vacuum pipeline to start the vacuum environment, so as to adsorb the first surface of the gallium antimonide wafer onto the ceramic disk through the first blue film; Using the thinning machine to thin the second surface of the gallium antimonide wafer; Closing the vacuum line to stop the vacuum environment, pulling the first blue film apart, so that the first blue film and the gallium antimonide wafer are separated from the ceramic disk; Soaking the first blue film and the gallium antimonide wafer in deionized water for a first preset time; Taking the first blue film and the gallium antimonide wafer out of the ionized water, and pulling apart the first blue film to separate the first blue film from the gallium antimonide wafer; The gallium antimonide wafer is cleaned with deionized water and dried.

4. The method for polishing a gallium antimonide wafer according to claim 3, characterized in that: Also includes: Connecting the vacuum pipeline to start the vacuum environment, so as to adsorb the second surface of the gallium antimonide wafer onto the ceramic disk through the second blue film; Using the thinning machine to thin the first surface of the gallium antimonide wafer; Closing the vacuum line to stop the vacuum environment, pulling the second blue film apart, so that the second blue film and the gallium antimonide wafer are separated from the ceramic disk; Soaking the second blue film and the gallium antimonide wafer in deionized water for a second preset time; Taking the second blue film and the gallium antimonide wafer out of the ionized water, and pulling apart the second blue film to separate the second blue film from the gallium antimonide wafer; The gallium antimonide wafer is cleaned with deionized water and dried.

5. The method for polishing a gallium antimonide wafer according to claim 1, characterized in that: The double-sided rough polishing of the thinned GaSb wafer comprises: The GaSb wafer that has been thinned is placed in the planetary wheel of the double-sided polishing machine; The double-sided polishing machine is set to perform rough polishing on the thinned gallium antimonide wafer at a first preset polishing speed and a first polishing amount.

6. The method for polishing a gallium antimonide wafer according to claim 5, characterized in that: The first preset polishing speed is 20 μm / h, and the first polishing amount is 20 μm.

7. The method for polishing a gallium antimonide wafer according to claim 2, characterized in that: A vacuum pipeline is provided inside the ceramic disk, and the vacuum pipeline is used to provide a vacuum environment. The single-sided fine polishing of the rough-polished gallium antimonide wafer includes: Placing the second surface of the roughly polished GaSb wafer on the third blue film and pressing it so that the second surface of the roughly polished GaSb wafer is adsorbed on the third blue film, and placing the roughly polished GaSb wafer on a ceramic plate; Fixing the ceramic disk on a workbench of a single-side polishing machine, connecting a vacuum pipeline to start a vacuum environment, so that the second surface of the gallium antimonide wafer that has been rough-polished is adsorbed on the ceramic disk through the third blue film; The single-side polishing machine is set to perform single-side fine polishing on the rough-polished gallium antimonide wafer at a second preset polishing speed and a first preset distance.

8. The method for polishing a gallium antimonide wafer according to claim 7, characterized in that: The second preset polishing speed is 0.25 μm / min, and the first preset distance is 6 μm.

9. The method for polishing a gallium antimonide wafer according to claim 7, characterized in that: Also includes: Closing the vacuum pipeline to stop the vacuum environment, pulling the third blue film apart, so that the third blue film and the gallium antimonide wafer subjected to single-sided fine polishing are separated from the ceramic plate; Soaking the third blue film and the finely polished gallium antimonide wafer in deionized water for a third preset time; Taking the third blue film and the finely polished gallium antimonide wafer out of the ionized water, and pulling apart the third blue film to separate the third blue film from the finely polished gallium antimonide wafer; The gallium antimonide wafer that has been finely polished is cleaned with deionized water and dried to obtain a gallium antimonide polished wafer.

10. A gallium antimonide polishing sheet, characterized in that: It is prepared by the method according to any one of claims 1 to 9.

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