Silicon carbide wafer detection equipment and method

Abstract

The invention discloses a silicon carbide wafer detection device and method.According to the silicon carbide wafer detection device, a detection table is detachably and fixedly connected with a silicon carbide wafer, and the detection table is provided with a hollow part for containing the silicon carbide wafer; the silicon carbide wafer can have a space for generating elastic deformation along the axial direction of the silicon carbide wafer under the condition of being fixed; load is provided for the silicon carbide wafer through the pneumatic part of the detection unit, so that the silicon carbide wafer deforms in the axial direction of the silicon carbide wafer, the deformation quantity generated by the silicon carbide wafer in the axial direction of the silicon carbide wafer is detected through the detection part, and therefore the bending rigidity of the silicon carbide wafer can be calculated, and quantification of the rigidity of the silicon carbide wafer is achieved. And a reference basis is provided for the quality of the silicon carbide wafer.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and more specifically, to a silicon carbide wafer detection device and method. Background Art

[0002] As a third-generation semiconductor material, silicon carbide wafers are widely used under various acoustic wave conditions such as high frequency, high power, and radiation resistance. However, silicon carbide wafers have problems such as difficult surface shape control and uneven stress, which lead to poor rigidity of silicon carbide wafers and affect the epitaxial growth quality of silicon carbide wafers.

[0003] In the prior art, it is impossible to quantify the stiffness of the silicon carbide wafer, resulting in an inability to provide a reference for the quality of the silicon carbide wafer.

[0004] In summary, how to quantify the stiffness of silicon carbide wafers to provide a reference for the quality of silicon carbide wafers is a problem that needs to be solved urgently by those skilled in the art. Summary of the invention

[0005] In view of this, the purpose of the present application is to provide a silicon carbide wafer detection device and method to quantify the stiffness of the silicon carbide substrate wafer to provide a reference for the quality of the silicon carbide substrate wafer.

[0006] In order to achieve the above objectives, this application provides the following technical solutions:

[0007] A silicon carbide wafer detection device comprises: a device body and a detection unit; wherein the device body is provided with a detection platform, the detection platform is used for detachably fixing and connecting a silicon carbide wafer, and the detection platform has a hollow portion for accommodating the silicon carbide wafer; the detection unit is located inside the device body, the detection unit comprises a pneumatic part and a detection part, the pneumatic part is used for causing the silicon carbide wafer to deform along its axial direction, and the detection part is used for detecting the deformation amount of the silicon carbide wafer generated along its axial direction; the axis of the pneumatic part, the axis of the detection part, and the axis of the silicon carbide wafer all coincide.

[0008] In some embodiments, there is one pneumatic part and one detection part; the pneumatic part and the detection part are arranged opposite to each other; or, the pneumatic part and the detection part are arranged in the same direction.

[0009] In some embodiments, the detection unit includes a first detection unit and a second detection unit with the same structure; the first detection unit and the second detection unit are arranged relatively to each other, and the first detection unit includes a first pneumatic part and a first detection part; the second detection unit includes a second pneumatic part and a second detection part; the axis of the first pneumatic part, the axis of the first detection part, the axis of the silicon carbide wafer, the axis of the second pneumatic part, and the axis of the second detection part all coincide.

[0010] In some embodiments, the first pneumatic member is provided with a first annular air hole, and the first detection member is provided inside the inner circle of the first annular air hole;

[0011] And / or, the second pneumatic part is provided with a second annular air hole, and the second detection part is arranged inside the inner circle of the second annular air hole.

[0012] In some embodiments, the first detection element is a spectral confocal device, and the first detection element includes a first dispersion lens, a first beam splitter, and a first point light source;

[0013] And / or, the second detection component is a spectral confocal device, and the second detection component includes a second dispersion lens, a second beam splitter and a second point light source.

[0014] In some embodiments, a fixing unit is further included, the fixing unit includes at least three silicone clamps, and the at least three silicone clamps are used to detachably fix and connect the silicon carbide wafer and the detection platform;

[0015] And / or, it also includes a control unit, and the detection unit is electrically connected to the control unit.

[0016] A method for detecting a silicon carbide wafer, using the silicon carbide wafer detection device as described above, is characterized in that it includes: fixing the silicon carbide wafer on a detection table; starting a pneumatic part to cause the silicon carbide wafer to produce elastic deformation; detecting the deformation amount δ of the silicon carbide wafer; and obtaining the bending stiffness K of the silicon carbide wafer.

[0017] In some embodiments, the pneumatic parts are started to cause elastic deformation of the silicon carbide wafer, and the deformation amount of the silicon carbide wafer is detected specifically including: starting the first pneumatic part, providing a constant load P to the silicon carbide wafer, and detecting the deformation amount δ1 of the silicon carbide wafer along the load direction of the first pneumatic part by the second detection part; starting the second pneumatic part, providing a constant load P to the silicon carbide wafer, and detecting the deformation amount δ2 of the silicon carbide wafer along the load direction of the second pneumatic part by the first detection part; the deformation amount δ of the silicon carbide wafer 50 is (δ2+δ1) / 2.

[0018] In some embodiments, the deformation amount δ1 of the silicon carbide wafer along the load direction of the first pneumatic component is detected by the second detection component, specifically including: after the second point light source passes through the second beam splitter, the second dispersion lens forms monochromatic light of different wavelengths, the focusing points of the monochromatic light of different wavelengths correspond to different distance values, and the focusing point reached after the silicon carbide wafer is elastically deformed along the load direction of the first pneumatic component is detected to obtain the deformation amount δ1 of the silicon carbide wafer along the load direction of the first pneumatic component;

[0019] The deformation amount δ2 generated by the silicon carbide wafer along the load direction of the second pneumatic part is detected by the first detection part, specifically including: after the first point light source passes through the first spectrometer, the monochromatic light of different wavelengths is formed through the first dispersion lens, the focusing points of the monochromatic light of different wavelengths correspond to different distance values, and the focusing point reached by the silicon carbide wafer after the elastic deformation is generated along the load direction of the second pneumatic part is detected to obtain the deformation amount δ2 generated by the silicon carbide wafer along the load direction of the second pneumatic part.

[0020] In some embodiments, the bending stiffness of the silicon carbide wafer is obtained, specifically including: using K=P / (δ2+δ1) / 2 to obtain the bending stiffness K of the silicon carbide wafer; wherein P is the constant load provided to the silicon carbide wafer by the first pneumatic part and the second pneumatic part respectively, and the unit is N; δ1 is the deformation amount generated by the silicon carbide wafer along the load direction of the first pneumatic part, and the unit is μm; δ2 is the deformation amount generated by the silicon carbide wafer along the load direction of the second pneumatic part, and the unit is μm.

[0021] The silicon carbide wafer detection equipment provided by the present application is detachably fixedly connected to the silicon carbide wafer through a detection table, and the detection table has a hollow portion for accommodating the silicon carbide wafer, so that the silicon carbide wafer can have space to produce elastic deformation along its axial direction when fixed; a load is provided to the silicon carbide wafer through the pneumatic parts of the detection unit, so that the silicon carbide wafer is deformed along its axial direction, and the deformation amount of the silicon carbide wafer along its axial direction is detected by the detection part, so that the bending stiffness of the silicon carbide wafer can be calculated, thereby realizing the quantification of the stiffness of the silicon carbide wafer and providing a reference basis for the quality of the silicon carbide wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying any creative work.

[0023] Figure 1 A schematic diagram of the structure of a silicon carbide wafer detection device provided in an embodiment of the present application;

[0024] Figure 2 A schematic diagram of the structure of a detection unit in a silicon carbide wafer detection device provided in an embodiment of the present application;

[0025] Figure 3 A schematic cross-sectional view of a detection unit in a silicon carbide wafer detection device provided in an embodiment of the present application;

[0026] Figure 4 This is a schematic diagram of the operation of a detection unit in a silicon carbide wafer detection device provided in an embodiment of the present application.

[0027] Description of reference numerals:

[0028] 10-equipment body, 11-testing table;

[0029] 20 - first detection unit, 21 - first pneumatic component, 22 - first detection component, 221 - first dispersion lens, 222 - first spectrometer, 223 - first point light source;

[0030] 30 - second detection unit, 31 - second pneumatic component, 32 - second detection component, 321 - second dispersion lens, 322 - second beam splitter, 323 - second point light source;

[0031] 40-fixed unit;

[0032] 50-silicon carbide wafer;

[0033] 60-Control unit. DETAILED DESCRIPTION

[0034] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0035] The technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. The terms used in the following embodiments are only for the purpose of describing specific embodiments and are not intended to be used as limitations on the present application. As used in the specification and the appended claims of the present application, the singular expressions "one", "a kind", "said", "above", "the" and "this" are intended to also include expressions such as "one or more", unless there is a clear contrary indication in the context. It should also be understood that in the embodiments of the present application, "one or more" refers to one, two or more; "and / or" describes the association relationship of the associated objects, indicating that three relationships may exist; for example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone, where A and B can be singular or plural. The character " / " generally indicates that the objects associated before and after are in an "or" relationship.

[0036] References to "one embodiment" or "some embodiments" etc. described in this specification mean that a particular feature, structure or characteristic described in conjunction with the embodiment is included in one or more embodiments of the present application. Thus, the phrases "in one embodiment", "in some embodiments", "in some other embodiments", "in some other embodiments", etc. that appear at different places in this specification do not necessarily refer to the same embodiment, but mean "one or more but not all embodiments", unless otherwise specifically emphasized in other ways. The terms "including", "comprising", "having" and their variations all mean "including but not limited to", unless otherwise specifically emphasized in other ways.

[0037] The multiple involved in the embodiments of the present application means greater than or equal to two. It should be noted that in the description of the embodiments of the present application, the words "first", "second", etc. are only used for the purpose of distinguishing the description, and cannot be understood as indicating or implying relative importance, nor can they be understood as indicating or implying an order.

[0038] At present, with the widespread application of silicon carbide wafers, in order to reduce the cost of devices applicable to silicon carbide wafers and improve the utilization rate of silicon carbide wafers, large-size silicon carbide wafers have gradually entered a stage of rapid development; on the contrary, as the diameter of silicon carbide wafers increases, the surface shape (flatness, warp) of silicon carbide wafers will be difficult to control and stress will be uneven, which will affect the rigidity of silicon carbide wafers and lead to poor quality of epitaxial growth of silicon carbide wafers (growing a layer of single-crystal silicon carbide film or heterogeneous material on the surface of silicon carbide wafers by chemical vapor deposition or molecular beam epitaxy to construct device functional layers), affecting the construction of device functional layers by silicon carbide wafers.

[0039] In the prior art, the stiffness of the silicon carbide wafer is usually detected by manually holding the edge of the silicon carbide wafer and pressing down on the center of the silicon carbide wafer. However, the stiffness of the silicon carbide wafer cannot be accurately quantified, and thus a reference for the quality of the silicon carbide wafer cannot be provided.

[0040] The embodiments of the present application provide a silicon carbide wafer detection device and method to quantify the stiffness of the silicon carbide substrate wafer to provide a reference for the quality of the silicon carbide substrate wafer.

[0041] like Figure 1-Figure 4 As shown, a silicon carbide wafer detection device provided in an embodiment of the present application includes a device body 10 and a detection unit. The device body 10 is provided with a detection platform 11, which is used to detachably fix and connect a silicon carbide wafer 50, and the detection platform 11 has a hollow portion for accommodating the silicon carbide wafer 50, so that after the silicon carbide wafer 50 is fixed on the detection platform 11, there is space for deformation, so as to facilitate subsequent detection.

[0042] The detection unit is located inside the device body 10. The detection unit includes a pneumatic part and a detection part. The pneumatic part can cause the silicon carbide wafer 50 to deform along its axial direction. The pneumatic part will not directly contact the silicon carbide wafer 50. By providing air pressure, the silicon carbide wafer 50 is elastically deformed. In this way, the bending deformation of the silicon carbide wafer 50 itself can be obtained to improve the accuracy of the quantification of the stiffness of the silicon carbide wafer 50.

[0043] The deformation amount of the silicon carbide wafer 50 along its axial direction is detected by the detection part, so that the bending stiffness of the silicon carbide wafer 50 can be obtained according to its deformation amount, thereby quantifying the stiffness of the silicon carbide wafer and providing a reference basis for the quality of the silicon carbide wafer.

[0044] In order to ensure the accuracy of the detection of the silicon carbide wafer 50, the axis of the pneumatic component, the axis of the detection component and the axis of the silicon carbide wafer are all coincident.

[0045] It should be noted that the pneumatic part is a device that can apply a load to an object by discharging gas through air holes, such as a pneumatic nozzle, a pneumatic injector, etc., and the embodiments of the present application do not limit this.

[0046] In actual situations, the silicon carbide wafer detection equipment provided in the embodiment of the present application also includes a fixing unit 40, which includes at least three silicone clamps, and the at least three silicone clamps can detachably clamp and fix the silicon carbide wafer 50 and the detection table 11, so that the silicon carbide wafer 50 can be stably fixed on the detection table 11, and the silicone clamps can reduce damage to the surface of the silicon carbide wafer 50, thereby protecting the flatness of the surface of the silicon carbide wafer 50.

[0047] It should be noted that at least three silicone clamps are sequentially distributed along the circumference of the hollow portion of the testing platform 11 , and there is an angle between any two of them, so as to improve the stability of clamping the silicon carbide wafer 50 .

[0048] For example, Figure 1 As shown, the fixing unit 40 includes four silicone clamps, which improve the stability of the silicon carbide wafer 50 by clamping the four corners of the silicon carbide wafer 50 and ensure the accuracy of the detection.

[0049] In some other embodiments, the clamping member of the fixing unit 40 may also be made of a material such as rubber, air cushion, etc. that can reduce damage to the surface of the silicon carbide wafer 50, which is not limited in the embodiments of the present application.

[0050] In some embodiments, in order to improve the detection efficiency of silicon carbide wafers, the detection unit includes a pneumatic part and a detection part. The pneumatic part is used to make the silicon carbide wafer 50 produce elastic deformation in a single direction along its axial direction, and its deformation amount is detected by the detection part, thereby reducing the detection time and improving the detection efficiency.

[0051] Among them, the pneumatic part and the detection part can be arranged relative to each other so that the detection part can detect the deformation amount of the silicon carbide chip 50 on the opposite side of the pneumatic part providing the load, thereby reducing the interference between the pneumatic part and the detection part and improving the accuracy of the detection; of course, the pneumatic part and the detection part can also be arranged in the same direction, so that the detection part detects the deformation amount of the silicon carbide chip 50 along the load direction of the pneumatic part, so as to make the detection unit more compact and improve the integration of the entire equipment body 10.

[0052] In some other embodiments, such as Figure 1 As shown, the detection unit includes a first detection unit 20 and a second detection unit 30 of the same structure, and the first detection unit 20 and the second detection unit 30 are arranged opposite to each other. The first detection unit 20 includes a first pneumatic part 21 and a first detection part 22, and the second detection unit 30 includes a second pneumatic part 31 and a second detection part 32, and the axis of the first pneumatic part 21, the axis of the first detection part 22, the axis of the silicon carbide wafer 50, the axis of the second pneumatic part 31, and the axis of the second detection part 32 are all coincident to ensure the accuracy of the detection of the silicon carbide wafer 50.

[0053] like Figure 4As shown, the first pneumatic part 21 provides a load to the center of the silicon carbide wafer 50, so that the silicon carbide wafer 50 generates elastic deformation along its axial direction, and the first deformation amount of the silicon carbide wafer 50 generated along the load direction of the first pneumatic part 21 is detected by the second detection part 32; the second pneumatic part 31 provides a load to the center of the silicon carbide wafer 50, so that the silicon carbide wafer 50 generates elastic deformation along its axial direction, and the second deformation amount of the silicon carbide wafer 50 generated along the load direction of the second pneumatic part 31 is detected by the first detection part 22. The elastic deformation amount of the silicon carbide wafer 50 can be obtained by calculating the average of the first deformation amount and the second deformation amount, thereby improving the accuracy of the detection of the silicon carbide wafer 50.

[0054] Of course, in some other embodiments, the deformation amount generated along the load direction of the first pneumatic part 21 can be detected by the first detection part 22, and the deformation amount generated along the load direction of the second pneumatic part 31 can be detected by the second detection part 32, and the embodiments of the present application are not limited to this.

[0055] In order to ensure that the axis of the first pneumatic part 21, the axis of the first detection part 22, the axis of the silicon carbide wafer 50, the axis of the second pneumatic part 31, and the axis of the second detection part 32 are all coincident, so as to ensure the accuracy of the detection of the silicon carbide wafer 50, Figure 2-Figure 3 As shown in the figure (taking the first detection unit as an example), the first pneumatic part 21 is provided with a first annular air hole, and the first detection part 22 is arranged inside the inner circle of the first annular air hole; similarly, the second pneumatic part 31 is provided with a second annular air hole, and the second detection part 32 is arranged inside the inner circle of the second annular air hole. In this way, the corresponding detection parts can detect the deformation amount of the silicon carbide wafer 50 along the axis of the load direction of the corresponding pneumatic part, thereby ensuring the accuracy of the detection of the silicon carbide wafer 50.

[0056] It should be noted that the first detection member 22 and the second detection member 32 are both smaller-sized detection devices, so the gas load provided by the first annular hole and the gas load provided by the second annular hole both act on the center of the silicon carbide wafer 50, ensuring the load effect provided to the silicon carbide wafer 50.

[0057] In some embodiments, Figure 4 As shown, the first detection component 22 is a spectral confocal device, and the first detection component 22 includes a first dispersion lens 221, a first beam splitter 222 and a first point light source 223. During the detection process, the first point light source 223 passes through the first beam splitter 222 and then forms monochromatic light of different wavelengths through the first dispersion lens 221. The focusing points of monochromatic light of different wavelengths correspond to different distance values. The corresponding focusing points reached by the silicon carbide wafer 50 after deformation are detected by the spectrometer to obtain the deformation amount of the silicon carbide wafer 50 along its axial direction.

[0058] In actual situations, the second detection component 32 can also be a spectral confocal device. The second detection component 32 includes a second dispersion lens 321, a second beam splitter 322 and a second point light source 323. During the detection process, the second point light source 323 passes through the second beam splitter 322 and then forms monochromatic light of different wavelengths through the second dispersion lens 321. The focusing points of monochromatic light of different wavelengths correspond to different distance values. The corresponding focusing points reached by the silicon carbide wafer 50 after deformation are detected by a spectrometer to obtain the deformation amount of the silicon carbide wafer 50 along its axial direction.

[0059] It should be noted that detecting the changes of different wavelengths by using a spectrometer and converting them into distance values ​​is a conventional method, which will not be described in detail here.

[0060] For example, Figure 4 As shown in a, in the initial state of the silicon carbide wafer 50, the focus point of the first monochromatic light in the spectral confocal device corresponds to the surface of the silicon carbide wafer 50. At this time, the wavelength of the first monochromatic light corresponds to the first distance value, such as Figure 4 As shown in b, when the silicon carbide wafer 50 is deformed, the focusing point of the second monochromatic light in the spectral confocal device corresponds to the surface of the silicon carbide wafer 50. At this time, the wavelength of the second monochromatic light corresponds to the second distance value. Therefore, the deformation amount of the silicon carbide wafer 50 can be obtained by the difference between the first distance value corresponding to the focusing point of the first monochromatic light and the second distance value corresponding to the focusing point of the second monochromatic light.

[0061] It should be noted that the embodiment of the present application detects the deformation of the silicon carbide wafer 50 along its axial direction through a spectral confocal device. By selecting a miniature spectral confocal device for detection, the impact of the load provided by the pneumatic parts is reduced. At the same time, the detection through the spectral confocal device improves the detection accuracy of the deformation of the silicon carbide wafer 50, and further improves the accuracy of the detection.

[0062] In some other embodiments, the first detection member 22 and the second detection member 32 may also be detection devices such as laser displacement sensors and optical interferometers that can be adapted to detect the silicon carbide wafer 50 , which is not limited in the embodiments of the present application.

[0063] like Figure 1As shown, the silicon carbide wafer detection device provided in the embodiment of the present application further includes a control unit 60, and the control unit 60 is electrically connected to each component of the detection unit to realize the control of each component of the first detection unit 20 and each component of the second detection unit 30. It should be noted that the control unit 60 also includes an acquisition unit, a calculation unit and an output unit. After the first deformation amount and the second deformation amount detected are acquired by the acquisition unit, the average value of the deformation amount of the silicon carbide wafer 50 and the bending stiffness of the silicon carbide wafer 50 under the provided load can be calculated by the calculation unit, and the bending stiffness of the silicon carbide wafer 50 can be output through the output unit.

[0064] When the silicon carbide wafer detection equipment provided in the embodiment of the present application is used, the silicon carbide wafer 50 is first fixed on the detection table 11 by the fixing unit 40, and then the first pneumatic part 21 and the second detection part 32 are started, so that the first pneumatic part 21 applies a pneumatic load to the center of the silicon carbide wafer 50, and the first deformation amount of the silicon carbide wafer 50 along the load direction of the first pneumatic part 21 is detected by the second detection part 32, and then the second pneumatic part 31 and the first detection part 22 are started, so that the second pneumatic part 31 applies a pneumatic load to the center of the silicon carbide wafer 50, and the second deformation amount of the silicon carbide wafer 50 along the load direction of the second pneumatic part 31 is detected by the first detection part 22, and then the bending stiffness of the silicon carbide wafer 50 can be calculated by the control unit 60, thereby realizing the quantification of the stiffness of the silicon carbide wafer and providing a reference basis for the quality of the silicon carbide wafer.

[0065] The embodiment of the present application also provides a method for detecting a silicon carbide wafer, using the above-mentioned silicon carbide wafer detection device, comprising:

[0066] S1, fixing the silicon carbide wafer 50 on the testing table 11;

[0067] S11 , the four corners of the silicon carbide wafer 50 are fixedly connected to the inspection platform 11 through the fixing unit 40 .

[0068] It should be noted that the fixing unit 40 needs to fix the edge of the silicon carbide wafer 50 as much as possible to reduce the influence of the fixing unit 40 on the deformation of the silicon carbide wafer 50 generated subsequently.

[0069] S2, starting the pneumatic part to make the silicon carbide wafer 50 produce elastic deformation, and detecting the deformation amount of the silicon carbide wafer 50;

[0070] S21, starting the first pneumatic component 21 to provide a constant load P to the silicon carbide wafer 50, and detecting the deformation amount δ1 of the silicon carbide wafer 50 along the load direction of the first pneumatic component 21 by the second detection component 32;

[0071] S211, after the second point light source 323 passes through the second beam splitter 322, it forms monochromatic light of different wavelengths through the second dispersion lens 321. The focusing points of the monochromatic light of different wavelengths correspond to different distance values. The focusing point reached by the silicon carbide wafer 50 after elastic deformation along the load direction of the first pneumatic part 21 is detected, and the deformation amount δ1 generated by the silicon carbide wafer 50 along the load direction of the first pneumatic part 21 is obtained;

[0072] S22, starting the second pneumatic component 31 to provide a constant load P to the silicon carbide wafer 50, and detecting the deformation amount δ2 of the silicon carbide wafer 50 along the load direction of the second pneumatic component 31 by the first detection component 22;

[0073] S221, after the first point light source 223 passes through the first beam splitter 222, it forms monochromatic light of different wavelengths through the first dispersion lens 221. The focusing points of the monochromatic light of different wavelengths correspond to different distance values. The focusing point reached by the silicon carbide wafer 50 after elastic deformation along the load direction of the second pneumatic part 31 is detected, and the deformation amount δ2 generated by the silicon carbide wafer 50 along the load direction of the second pneumatic part 31 is obtained;

[0074] S23, δ1 and δ2 are acquired by the acquisition unit of the control unit 60, and the deformation amount δ of the silicon carbide wafer 50 can be obtained by calculation as (δ2+δ1) / 2.

[0075] It should be noted that the load P provided by the first pneumatic part 21 to the silicon carbide wafer 50 is equal in magnitude to the load P provided by the second pneumatic part 31 to the silicon carbide wafer 50, but in opposite directions, and both are constant static loads. In actual situations, the load P can be set according to the device actually used in the silicon carbide wafer 50, and the specific value of the load P is not limited in the embodiment of the present application.

[0076] S3, obtaining the bending stiffness of the silicon carbide wafer 50;

[0077] S31. Use K=P / (δ2+δ1) / 2 to obtain the bending stiffness K of the silicon carbide chip 50; wherein P is the constant load provided by the first pneumatic part 21 and the second pneumatic part 31 to the silicon carbide chip 50 respectively, and the unit is N; δ1 is the deformation amount generated by the silicon carbide chip 50 along the load direction of the first pneumatic part 21, and the unit is μm; δ2 is the deformation amount generated by the silicon carbide chip 50 along the load direction of the second pneumatic part 31, and the unit is μm.

[0078] Exemplarily, the first pneumatic part 21 and the second pneumatic part 31 both provide a constant load of P=1N, the second detection part 32 detects δ1=153μm, and the first detection part 22 detects δ2=167μm. Using K=P / (δ2+δ1) / 2, it can be concluded that when P=1N, the bending stiffness of the silicon carbide chip 50 is 6250N / m.

[0079] It should be noted that the silicon carbide wafer detection method provided in the embodiment of the present application can also utilize a pneumatic component and a detection component. A load P is applied to the center of the silicon carbide wafer 50 through a pneumatic component, and the deformation amount δ of the silicon carbide wafer 50 along its axial direction is detected by the detection component. The bending stiffness of the silicon carbide wafer 50 can be obtained using K=P / δ, which reduces the detection time, reduces the equipment cost, and improves the detection efficiency.

[0080] The silicon carbide wafer detection method provided in the embodiment of the present application utilizes the silicon carbide wafer detection equipment provided in the embodiment of the present application to detect the deformation amount δ of the silicon carbide wafer 50 under a constant load P, thereby calculating the bending stiffness K of the silicon carbide wafer 50, thereby achieving quantification of the stiffness of the silicon carbide wafer 50 and providing a reference basis for the quality of the silicon carbide wafer 50.

[0081] The above description of the disclosed embodiments enables those skilled in the art to implement or use the present application. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present application. Therefore, the present application will not be limited to the embodiments shown herein, but will conform to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A silicon carbide wafer detection device, characterized in that: include: A device body (10) and a detection unit; The device body (10) is provided with a detection platform (11), the detection platform (11) is used to detachably fix and connect the silicon carbide wafer (50), and the detection platform (11) has a hollow portion for accommodating the silicon carbide wafer (50); The detection unit is located inside the device body (10), and comprises a pneumatic component and a detection component, the pneumatic component is used to cause the silicon carbide wafer (50) to deform along its axial direction, and the detection component is used to detect the amount of deformation of the silicon carbide wafer (50) along its axial direction; The axis of the pneumatic component, the axis of the detection component, and the axis of the silicon carbide wafer (50) all coincide with each other.

2. The silicon carbide wafer inspection device according to claim 1, characterized in that: The number of the pneumatic component is one, and the number of the detection component is one; The pneumatic component and the detection component are arranged opposite to each other; or, the pneumatic component and the detection component are arranged in the same direction.

3. The silicon carbide wafer inspection device according to claim 1, characterized in that: The detection unit comprises a first detection unit (20) and a second detection unit (30) having the same structure; The first detection unit (20) and the second detection unit (30) are arranged opposite to each other, and the first detection unit (20) comprises a first pneumatic component (21) and a first detection component (22); The second detection unit (30) comprises a second pneumatic component (31) and a second detection component (32); The axis of the first pneumatic component (21), the axis of the first detection component (22), the axis of the silicon carbide wafer (50), the axis of the second pneumatic component (31), and the axis of the second detection component (32) all coincide with each other.

4. The silicon carbide wafer inspection device according to claim 3, characterized in that: The first pneumatic component (21) is provided with a first annular air hole, and the first detection component (22) is arranged inside the inner circle of the first annular air hole; And / or, the second pneumatic component (31) is provided with a second annular air hole, and the second detection component (32) is arranged inside the inner circle of the second annular air hole.

5. The silicon carbide wafer inspection device according to claim 3, characterized in that: The first detection element (22) is a spectral confocal device, and the first detection element (22) comprises a first dispersion lens (221), a first beam splitter (222) and a first point light source (223); And / or, the second detection element (32) is a spectral confocal device, and the second detection element (32) comprises a second dispersion lens (321), a second beam splitter (322), and a second point light source (323).

6. The silicon carbide wafer inspection device according to any one of claims 1 to 5, characterized in that: It also includes a fixing unit (40), the fixing unit (40) including at least three silicone clamps, the at least three silicone clamps being used to detachably fix the silicon carbide wafer (50) and the detection platform (11); And / or, further comprising a control unit (60), wherein the detection unit is electrically connected to the control unit (60).

7. A method for detecting a silicon carbide wafer, using the silicon carbide wafer detection device according to any one of claims 1 to 6, characterized in that: include: Fixing the silicon carbide wafer (50) on a testing table (11); Starting the pneumatic part to cause the silicon carbide wafer (50) to undergo elastic deformation; Detecting a deformation amount δ of a silicon carbide wafer (50); The bending stiffness K of the silicon carbide wafer (50) is obtained.

8. The method for detecting silicon carbide wafers according to claim 7, characterized in that: Starting the pneumatic component to cause the silicon carbide wafer (50) to undergo elastic deformation, and detecting the deformation amount of the silicon carbide wafer (50) specifically includes: Starting the first pneumatic component (21) to provide a constant load P to the silicon carbide wafer (50), and detecting, by means of a second detection component (32), a deformation amount δ1 of the silicon carbide wafer (50) along a load direction of the first pneumatic component (21); Starting the second pneumatic component (31) to provide a constant load P to the silicon carbide wafer (50), and detecting, by means of the first detection component (22), a deformation amount δ2 of the silicon carbide wafer (50) along a load direction of the second pneumatic component (31); The deformation amount δ of the silicon carbide wafer (50) is (δ2+δ1) / 2.

9. The method for detecting silicon carbide wafers according to claim 8, characterized in that: Detecting the deformation amount δ1 of the silicon carbide wafer (50) along the load direction of the first pneumatic component (21) by means of a second detection component (32), specifically comprising: after the second point light source (323) passes through the second beam splitter (322), monochromatic light of different wavelengths is formed through a second dispersion lens (321), the focusing points of the monochromatic light of different wavelengths correspond to different distance values, detecting the focusing point reached by the silicon carbide wafer (50) after elastic deformation is generated along the load direction of the first pneumatic component (21), and obtaining the deformation amount δ1 of the silicon carbide wafer (50) along the load direction of the first pneumatic component (21); The method detects the deformation amount δ2 generated by the silicon carbide wafer (50) along the load direction of the second pneumatic component (31) by using a first detection component (22), specifically comprising: after the first point light source (223) passes through the first beam splitter (222), monochromatic light of different wavelengths is formed through a first dispersion lens (221), and the focusing points of the monochromatic light of different wavelengths correspond to different distance values, and detects the focusing point reached by the silicon carbide wafer (50) after elastic deformation is generated along the load direction of the second pneumatic component (31), so as to obtain the deformation amount δ2 generated by the silicon carbide wafer (50) along the load direction of the second pneumatic component (31).

10. The method for detecting silicon carbide wafers according to claim 8, characterized in that: Obtaining the bending stiffness of a silicon carbide wafer (50) specifically comprises: The bending stiffness K of the silicon carbide wafer (50) is obtained by using K=P / (δ2+δ1) / 2; wherein P is the constant load provided by the first pneumatic part (21) and the second pneumatic part (31) to the silicon carbide wafer (50), respectively, in units of N; δ1 is the deformation amount generated by the silicon carbide wafer (50) along the load direction of the first pneumatic part (21), in units of μm; and δ2 is the deformation amount generated by the silicon carbide wafer (50) along the load direction of the second pneumatic part (31), in units of μm.

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