Device and method for testing dynamic service life of GaN HEMT device under wide-temperature condition

Abstract

The invention discloses a device and a method for testing the dynamic service life of a GaN HEMT (High Electron Mobility Transistor) device under a wide-temperature condition. The device comprises a programmable signal generator; the programmable signal generator is connected with one end of the driving circuit, the other end of the driving circuit is connected with a grid electrode of a to-be-tested device M0, a drain electrode of the to-be-tested device M0 is connected with a positive electrode of the programmable power supply, and a source electrode of the to-be-tested device M0 is connected with a negative electrode of the programmable power supply; a first diode module D1 and a second diode module D2 are connected between the drain electrode of the to-be-tested device M0 and the source electrode of the to-be-tested device M0, the first diode module D1 and the second diode module D2 are connected in series, and the to-be-tested device M0 is further connected with a voltage detection device; and a high-low temperature box is arranged at the placement position of the to-be-tested device M0. According to the invention, the on resistance of the to-be-tested GaN HEMT device can be tested under different working temperatures and high-frequency working conditions, so that the high-low temperature dynamic reliability test is realized.

Description

Technical Field

[0001] The invention belongs to the field of power device testing, and in particular relates to a dynamic working life test device and method for a GaN HEMT device under wide temperature conditions. Background Art

[0002] In the traditional power device-related industry, high-temperature reliability testing has long relied mainly on static testing methods. Among them, the main testing methods include HTRB (high-temperature drain reverse bias) and HTGB (high-temperature gate reverse bias) tests. The HTRB test is to place the power device in a high-temperature environment and apply a reverse bias voltage to the drain to simulate an extreme situation of the device in actual work, and then evaluate its reliability under such high-temperature and high reverse bias voltage conditions. The HTGB test is to apply a reverse bias voltage to the gate under high temperature, which is also to examine the performance stability of the power device under such specific stress conditions.

[0003] These traditional static test methods have played an important role in the reliability assessment of traditional power devices in the past. They are designed based on the operating characteristics and application scenarios of traditional power devices, and to a certain extent can effectively reflect the performance changes and potential failure modes of devices under static working conditions.

[0004] However, with the development of technology, GaN HEMT devices have gradually emerged. GaN HEMT (Gallium Nitride High - Electron - Mobility Transistor) is a gallium nitride high electron mobility transistor. Unlike traditional power devices, the main application scenarios of GaN HEMT devices are concentrated in the high-frequency field. In high-frequency working environments, GaN HEMT devices exhibit unique physical phenomena, including dynamic resistance degradation effect and current collapse effect. The dynamic resistance degradation effect refers to the change of the device's resistance over time or the increase of the number of switches during high-frequency switching. This change may affect the device's power transmission efficiency and overall performance. The current collapse effect is manifested as a sudden drop in the drain current of the device when working at high frequencies, which seriously interferes with the normal operation and signal processing capabilities of the device.

[0005] Due to these special effects of GaN HEMT devices, traditional static test methods such as HTRB and HTGB obviously cannot meet the test conditions required for their application. These traditional methods cannot accurately simulate the stress of GaN HEMT devices in high-frequency dynamic working environments, and cannot fully and accurately evaluate the reliability and performance of such devices in actual high-frequency application scenarios. Therefore, it is necessary to develop new test equipment and test methods based on the characteristics of GaN HEMT devices to achieve high and low temperature dynamic reliability testing. Summary of the invention

[0006] The purpose of the present invention is to provide a dynamic working life test device and method for GaN HEMT devices under wide temperature conditions. On the basis of traditional reliability tests, the dynamic working life test device and method for GaN HEMT devices under wide temperature conditions are tested for the dynamic resistance degradation effect of GaN HEMT devices to overcome the shortcomings of the prior art that the stress conditions of GaN HEMT devices under high-frequency dynamic working environments cannot be accurately simulated and the test requirements for GaN HEMT device applications cannot be met.

[0007] In order to achieve the above objectives, the following technical solutions are provided: In the first aspect, the present invention provides a dynamic working life test device for GaN HEMT devices under wide temperature conditions, the device comprising a programmable signal generator; the programmable signal generator is connected to one end of a driving circuit, the other end of the driving circuit is connected to the gate of a device under test M0, the drain of the device under test M0 is connected to the positive pole of a programmable power supply, and the source of the device under test M0 is connected to the negative pole of the programmable power supply; a first diode module D1 and a second diode module D2 are connected between the drain of the device under test M0 and the source of the device under test M0, the first diode module D1 and the second diode module D2 are connected in series, the device under test M0 is also connected to a voltage detection device; a high and low temperature box is provided at the location where the device under test M0 is placed. The operating frequency of the device is within the range of 0Hz~20MHz, the test temperature range is -55℃~150℃, and the test current range is 0.5A~40A.

[0008] Furthermore, the frequency generation range of the programmable signal generator includes 0~20MHz, the duty cycle adjustment range is ≥20%~80%, and the output voltage range is compatible with TTL and CMOS levels.

[0009] Furthermore, the driving circuit adopts a low-end circuit with a driving current ≥ 4A to meet the maximum test frequency of 20MHz of the GaN HEMT device of this test device, and an operating voltage range of 4~6V to meet the driving voltage of different models of GaN HEMT devices.

[0010] Furthermore, the operating temperature range of the high and low temperature box is -55°C~150°C to meet the test temperature range of the test device. The lead-out cable of the high and low temperature box has a resistance change ratio of less than or equal to 5% and an absolute value of less than or equal to 1mΩ within the range of -55°C~150°C.

[0011] Furthermore, the diode module D1 and the diode module D2 are consistent, and the sum of the conduction voltage drops of the two modules in the range of 0.5A~40A is greater than or equal to 2V, so that the voltage detection device can filter out the voltage signal when the freewheeling diode module is freewheeling, thereby improving the accuracy of GaN HEMT device testing.

[0012] Furthermore, the first diode module D1 and the second diode module D2 use freewheeling diodes.

[0013] Furthermore, the programmable power supply can be adjusted to a current source mode, which can achieve a constant current output to the test system and has the ability to record the output voltage, current, and power to meet the subsequent full monitoring of the test data.

[0014] Furthermore, the voltage detection device detects a voltage range of 0~2V, and filters out voltage signals greater than 2V, thereby filtering out the freewheeling diode module signal. The voltage detection device measures a smaller voltage range, and can only observe the drain-source voltage of the GaN HEMT device, thereby reducing the amount of subsequent data processing and improving data pertinence.

[0015] In a second aspect, the present invention further provides a method for using a dynamic operating life test device for a GaN HEMT device under wide temperature conditions, comprising the following steps: Step 1, installing the device under test M0 on the test fixture; Step 2, place the test fixture in the high and low temperature box and connect the circuit correctly; Step 3, setting the output current and output voltage limits of the programmable power supply according to the test conditions; Step 4, setting the programmable signal generator to control the operating frequency of the PWM signal according to the test conditions; the PWM signal is a pulse width modulation signal; it is a digital signal technology that controls the average power or average voltage of the signal by changing the signal pulse width; Step 5, setting the voltage of the driving circuit according to the characteristics of the device under test M0 to ensure that the device under test M0 is fully turned on when working; Step 6: Turn on each device for testing.

[0016] Furthermore, the order of starting each device is voltage detection device - programmable power supply - programmable signal generator - drive circuit. Turning on the voltage detection device first can prepare the monitoring circuit before the system is powered on, ensuring that once the system starts running, the voltage data can be collected in a timely and accurate manner, avoiding the problem of voltage data loss or inaccurate collection caused by improper startup sequence; then turning on the programmable power supply to provide a stable source of power for the entire test system, then starting the programmable signal generator to generate a drive signal, and finally turning on the drive circuit to transmit the signal to the device under test M0, so that the device under test M0 starts working.

[0017] Compared with the prior art, the present invention has the following beneficial technical effects: The present invention provides a dynamic working life test device for GaN HEMT devices under wide temperature conditions. Through the synergistic effect of a programmable signal generator, a voltage detection device, a driving circuit, a first diode module D1, a second diode module D2 and a high and low temperature chamber, the on-resistance of the GaN HEMT device to be tested can be tested under different working temperatures and high-frequency working conditions, thereby realizing high and low temperature dynamic reliability testing. This solves the problem that traditional static testing methods cannot accurately simulate the stress conditions of GaN HEMT devices under high-frequency dynamic working environments, and therefore cannot comprehensively and accurately evaluate the reliability and performance of such devices in actual high-frequency application scenarios.

[0018] Specifically, the frequency generation range of the programmable signal generator includes 0-20MHz, which can cover a wider frequency range for testing. The operating temperature range of the high and low temperature box is -55℃-150℃, which can dynamically simulate the dynamic working life of the device under wide temperature conditions; the freewheeling diode module D1 and the freewheeling diode module D1 D2 are consistent and the sum of the on-state voltage drops within the range of 0.5A-40A is greater than or equal to 2V. Combined with the voltage detection device, the voltage detection range is 0-2V and the voltage signal greater than 2V can be filtered out. The voltage signal of the freewheeling diode module during freewheeling can be effectively filtered out, and only the drain-source voltage of the GaN HEMT device is observed. This can reduce the interference of stray signals on the test data, ensure the accuracy of voltage detection, and improve the accuracy of GaN HEMT device testing. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 Schematic diagram of a dynamic operating life test device for a GaN HEMT device under wide temperature conditions in an embodiment of the present invention.

[0020] Figure 2 The present invention is a schematic diagram of a programmable power supply output waveform of a method for using a dynamic operating life test device for a GaN HEMT device under wide temperature conditions in an embodiment of the present invention.

[0021] Figure 3 The present invention is a schematic diagram of the output waveform of the voltage detection device of a method for using a dynamic operating life test device for a GaN HEMT device under wide temperature conditions in an embodiment of the present invention.

[0022] Figure 4 The present invention is a flowchart of a method for using a dynamic operating life test device for a GaN HEMT device under wide temperature conditions according to an embodiment of the present invention. DETAILED DESCRIPTION

[0023] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0024] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0025] Example 1 See also Figure 1 A dynamic working life test device for GaN HEMT devices under wide temperature conditions, the device comprises a voltage detection device, a programmable power supply, a programmable signal generator, a drive circuit, a device to be tested M0, a diode module D1, a diode module D2, and a high and low temperature chamber; the programmable signal generator is selected from the DG5000 model, the drive circuit is selected from the UCC27614 drive chip; the programmable power supply is selected from the DP5150-750-60-3U; the voltage detection device can be selected from an oscilloscope; The device includes a programmable signal generator; the programmable signal generator is connected to one end of the driving circuit, the other end of the driving circuit is connected to the gate of the device under test M0, the drain of the device under test M0 is connected to the positive electrode of the programmable power supply, and the source of the device under test M0 is connected to the negative electrode of the programmable power supply; a first diode module D1 and a second diode module D2 are connected between the drain of the device under test M0 and the source of the device under test M0, the first diode module D1 and the second diode module D2 are connected in series, and the device under test M0 is also connected to a voltage detection device; the voltage detection device can filter out related voltages greater than 2V, and a high and low temperature box is set at the place where the device under test M0 is placed; the driving circuit can provide an adaptive driving signal, the voltage detection device can accurately filter out interference signals and monitor device voltage, and the programmable power supply can stably provide accurate current and voltage, so that high-precision test data can be obtained during the entire test process.

[0026] In some preferred embodiments of the present invention, the frequency generation range of the programmable signal generator includes 0~20MHz, and the appropriate operating frequency can be set within this range according to specific test conditions. The duty cycle adjustment range is ≥20%~80%, and the output voltage range is compatible with TTL level and CMOS level, which can adapt to different circuit interface requirements and ensure that the signal can correctly drive the GaN HEMT device.

[0027] In some preferred embodiments of the present invention, the driving circuit adopts a low-end circuit, the driving current is ≥4A, and the working voltage range is 4~6V; the driving circuit provides a suitable driving voltage for the device under test to ensure that the device can work normally and is fully turned on. It avoids problems such as incomplete or unstable device switching due to insufficient driving, ensures the accuracy of the device working state during the test, and can provide suitable driving conditions for different types of devices, so that the test results can better reflect the actual performance of the device in actual applications, thereby improving the reliability and effectiveness of the test.

[0028] In some preferred embodiments of the present invention, the first diode module D1 and the second diode module D2 use freewheeling diodes, and the diode module D1 and the diode module D2 have consistency, and the sum of the conduction voltage drops of the two modules in the range of 0.5A~40A is greater than or equal to 2V, so that the voltage detection device can filter out the voltage signal when the freewheeling diode module is freewheeling, thereby improving the accuracy of GaN HEMT device testing. In long-term dynamic high-temperature working life testing, accurate data collection is crucial for analyzing the degradation law of device performance and predicting its life, which helps to improve the credibility of the entire test results.

[0029] In some preferred embodiments of the present invention, the programmable power supply can be adjusted to a current source mode, capable of achieving a constant current output to the test system, and having the ability to record output voltage, current, and power to meet subsequent full monitoring of test data.

[0030] In some preferred embodiments of the present invention, the voltage detection device detects a voltage range of 0-2V, and filters out voltage signals greater than 2V. The voltage detection device measures a smaller voltage range, which can filter out the freewheeling diode module signal and only observe the drain-source voltage of the GaN HEMT device, thereby reducing the amount of subsequent data processing and improving data pertinence.

[0031] The operating temperature range of the high and low temperature box is -55℃~150℃ to meet the test temperature range of the test device. The lead-out cable of the high and low temperature box has a resistance change ratio of less than or equal to 5% and an absolute value of less than or equal to 1mΩ within the range of -55℃~150℃. The setting of the high and low temperature box and the coordinated work of various electrical components can well simulate the working environment of GaN HEMT devices in actual power electronic circuits. Whether it is the heat dissipation challenge in a high temperature environment or the working state under different frequency drive signals and current loads.

[0032] Example 2 See also Figures 2 to 4 The present invention also provides a method for a GaN HEMT device dynamic operating life test device under wide temperature conditions, comprising the following steps: Step 1, installing the device under test M0 on the test fixture; Step 2, place the test fixture in the high and low temperature box and connect the circuit correctly; Step 3, setting the output current and output voltage limits of the programmable power supply according to the test conditions; Step 4, setting the programmable signal generator to control the operating frequency of the PWM signal according to the test conditions; Step 5, setting the voltage of the driving circuit according to the characteristics of the device under test M0 to ensure that the device under test M0 is fully turned on when working; Step 6: Turn on each device for testing.

[0033] Specifically, in actual application, the device under test M0 is correctly installed on the test fixture and placed in a high and low temperature box. The temperature of the high and low temperature box is set to -40°C. After the temperature stabilizes, according to the specification of the device under test M0, the voltage of the drive circuit is set to 5V to ensure that the device under test M0 can be turned on normally; the output current limit of the programmable power supply is set to 5A, and the output voltage limit is set according to the rated voltage of the device under test M0, for example, set to 40V. A PWM signal with a frequency of 1MHz and a duty cycle of 50% is generated by a programmable signal generator. The signal is amplified by the drive circuit to drive the device under test M0 to start working.

[0034] Turn on each device in the order of voltage detection device - programmable power supply - programmable signal generator - drive circuit. The order of turning on the high and low temperature boxes can be flexibly selected. Turning on the voltage detection device first can prepare the monitoring circuit before the system is powered on, ensuring that once the system starts running, the voltage data can be collected in a timely and accurate manner to avoid the loss of voltage data or inaccurate collection caused by improper startup sequence. Then turn on the programmable power supply to provide a stable power source for the entire test system, then start the programmable signal generator to generate a drive signal, and finally turn on the drive circuit to pass the signal to the device under test M0, so that the device under test M0 starts working.

[0035] During the test, the voltage detection device monitors the drain-source voltage of the device in real time, and the programmable power supply records the output current, voltage and power data. After a period of testing, the frequency of the programmable signal generator is gradually increased to 10MHz, and the output current of the programmable power supply is adjusted to 30A to observe the performance changes of the device under different working conditions, such as the fluctuation of the drain-source voltage and the heating of the device. The programmable power supply results are as follows: Figure 3 As shown, Figure 3 Medium V D Refers to the series voltage drop of the diode module. The voltage drop is greater than 2V. When the series voltage drop of the diode module is low, the PWM signal outputs a high level. The voltage detection device outputs a waveform such as Figure 4 As shown in FIG. 1 , the voltage detection device filters out the relevant voltage greater than 2V and can accurately detect the drain-source voltage of the GaN HEMT device. , drain-source voltage When the level is low, the PWM signal outputs a high level; this improves measurement accuracy and can accurately identify the degradation of the device's on-resistance as the temperature changes.

[0036] During the entire test process, the first diode module D1 and the second diode module D2 play a freewheeling role, and their conduction voltage drop cooperates with the voltage detection device to effectively filter out the voltage signal during freewheeling, ensuring the accuracy of voltage detection. By analyzing the collected data, such as calculating the conduction loss and switching loss of the device at different frequencies and currents, the reliability and life of the GaN HEMT device in the communication base station power module are evaluated; if it is found during the test that the device performance is significantly degraded or abnormal under certain conditions, such as a sudden increase in drain-source voltage, abnormal heating, etc., the cause can be further analyzed.

[0037] This application solves the problem that traditional static testing methods cannot accurately simulate the stress conditions of GaN HEMT devices in high-frequency dynamic working environments, and therefore cannot comprehensively and accurately evaluate the reliability and performance of such devices in actual high-frequency application scenarios.

[0038] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0039] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A dynamic working life test device for GaN HEMT devices under wide temperature conditions, characterized in that: The device includes a programmable signal generator; the programmable signal generator is connected to one end of a driving circuit, the other end of the driving circuit is connected to a gate of a device under test M0, the drain of the device under test M0 is connected to a positive pole of a programmable power supply, and the source of the device under test M0 is connected to a negative pole of the programmable power supply; a first diode module D1 and a second diode module D2 are connected between the drain of the device under test M0 and the source of the device under test M0, the first diode module D1 and the second diode module D2 are connected in series, and the device under test M0 is also connected to a voltage detection device; a high and low temperature box is provided where the device under test M0 is placed.

2. The dynamic operating life test device of a GaN HEMT device under wide temperature conditions according to claim 1, characterized in that: The frequency generation range of the programmable signal generator includes 0~20MHz, the duty cycle adjustment range is ≥20%~80%, and the output voltage range is compatible with TTL level and CMOS level.

3. The dynamic operating life test device of a GaN HEMT device under wide temperature conditions according to claim 1, characterized in that: The driving circuit adopts a low-end circuit, the driving current is ≥4A, and the operating voltage range is 4~6V.

4. The dynamic operating life test device of a GaN HEMT device under wide temperature conditions according to claim 1, characterized in that: The operating temperature range of the high and low temperature box is -55°C ~ 150°C. The lead-out cable of the high and low temperature box has a resistance change ratio of less than or equal to 5% and an absolute value of less than or equal to 1mΩ within the range of -55°C ~ 150°C.

5. The dynamic operating life test device of a GaN HEMT device under wide temperature conditions according to claim 1, characterized in that: The diode module D1 and the diode module D2 are consistent, and the sum of the conduction voltage drops of the two modules within the range of 0.5A to 40A is greater than or equal to 2V.

6. The dynamic operating life test device of a GaN HEMT device under wide temperature conditions according to claim 5, characterized in that: The first diode module D1 and the second diode module D2 use freewheeling diodes.

7. The dynamic operating life test device of a GaN HEMT device under wide temperature conditions according to claim 1, characterized in that: The programmable power supply can be adjusted to a current source mode.

8. The dynamic operating life test device of a GaN HEMT device under wide temperature conditions according to claim 1, characterized in that: The voltage detection device detects a voltage range of 0~2V and filters out voltage signals greater than 2V.

9. The method for using the dynamic working life test device of GaN HEMT device under wide temperature conditions as claimed in claim 1, characterized in that: The following steps are involved: Step 1, installing the device under test M0 on the test fixture; Step 2, place the test fixture in the high and low temperature box and connect the circuit correctly; Step 3, setting the output current and output voltage limits of the programmable power supply according to the test conditions; Step 4, setting the programmable signal generator to control the operating frequency of the PWM signal according to the test conditions; Step 5, setting the voltage of the driving circuit according to the characteristics of the device under test M0 to ensure that the device under test M0 is fully turned on when working; Step 6: Turn on each device for testing.

10. The method for dynamic working life test device of GaN HEMT device under wide temperature conditions according to claim 9, characterized in that: The order of starting each device is voltage detection device - programmable power supply - programmable signal generator - drive circuit.

Images