Method and system for improving lattice damage after ion implantation

Abstract

The invention relates to the technical field of semiconductor manufacturing, and provides a method and system for improving lattice damage after ion implantation. The method comprises the following steps: placing a wafer to be detected after ion implantation on a processing workbench; performing lattice defect detection on the to-be-detected wafer to obtain a detection result including a defect degree, screening out a target wafer of which the lattice defect needs to be repaired according to the detection result, and marking the defect part of the target wafer; and performing corresponding annealing treatment on the defect according to the mark and the defect degree so as to improve the lattice defect of the target wafer. According to the method, the target wafer of which the lattice defect needs to be repaired is detected and screened out for marking, and then the defect position is accurately annealed according to the mark and the defect degree to realize the change of the microstructure of the material surface, so that the lattice defect after ion implantation can be improved with high precision, high efficiency and low cost; and the performance, the quality and the reliability of the CMOS device are improved.

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