Object stage

Abstract

The objective table includes a first metal plate, a second metal plate positioned below the first metal plate, a heat insulation portion including a first space provided in the first metal plate and a second space provided in the second metal plate, and a circulation path and a heater disposed so as to sandwich the heat insulation portion therebetween, the width of the heat-insulating portion in the first metal plate is different from the width of the heat-insulating portion in the second metal plate.

Description

Technical Field

[0001] One embodiment of the present invention relates to a stage on which a wafer or the like is placed. Background Art

[0002] In a semiconductor device for manufacturing semiconductors, a stage for placing a wafer is provided. From the perspective of the degree of freedom of heater configuration, contamination, heat resistance, etc., ceramics are usually used for the stage. For example, as a stage using ceramics, Patent Document 1 discloses a ceramic plate having a temperature gradient distribution in which the temperature of the inner peripheral region and the temperature of the outer peripheral region are different by controlling the heater elements of the inner peripheral region and the heater elements of the outer peripheral region respectively. In a ceramic plate such as that disclosed in Patent Document 1, the temperature increases from the inner peripheral region to the outer peripheral region, and a temperature gradient distribution in which the temperature difference between the inner peripheral region and the outer peripheral region is about 10°C can be achieved.

[0003] (Prior art literature)

[0004] (Patent Document)

[0005] Patent Document 1: International Publication No. 2018 / 030433 Summary of the invention

[0006] (Problems to be solved by the invention)

[0007] In recent years, it is desired to further increase the temperature difference between the inner and outer areas of the stage. However, in a stage using ceramics, if the temperature difference between the inner and outer areas is 10° C. or more, there is a possibility that the stage will be damaged.

[0008] In view of the above problems, an object of one embodiment of the present invention is to provide a stage capable of realizing a temperature gradient distribution with a large temperature difference between an inner region and an outer region.

[0009] (Measures taken to solve the problem)

[0010] An embodiment of the present invention involves a stage including a first metal plate, a second metal plate located below the first metal plate, an insulating portion including a first space provided in the first metal plate and a second space provided in the second metal plate, and a circulating flow path and a heater arranged to sandwich the insulating portion. From a cross-sectional view, the width of the insulating portion in the first metal plate is different from the width of the insulating portion in the second metal plate.

[0011] A stage according to one embodiment of the present invention includes a first metal plate including a first groove, a second metal plate located below the first metal plate and including a through hole, a third metal plate located below the second metal plate and including a second groove, and a circulating flow path and a heater arranged so as to sandwich the first groove, wherein the first groove, the through hole and the second groove are interconnected.

[0012] From a cross-sectional view, the width of the first groove may be different from the width of at least one of the through hole and the second groove.

[0013] In addition, an embodiment of the present invention involves a stage including a first metal plate including a first through hole, a second metal plate located below the first metal plate and including a second through hole, a third metal plate located below the second metal plate and including a groove, and a circulating flow path and a heater arranged to sandwich the first through hole, and the first through hole, the second through hole and the groove are interconnected.

[0014] From a cross-sectional view, the width of the first through hole may be different from the width of at least one of the second through hole and the groove.

[0015] From a cross-sectional view, at least one of the first through hole, the second through hole and the groove may have a tapered shape. The tapered shape may increase in width toward the surface of the first metal plate. The tapered shape may also decrease in width toward the surface of the first metal plate.

[0016] In addition, a stage according to one embodiment of the present invention includes a first metal plate including a first groove and a circulating flow path and a heater sandwiched between the first groove, a second metal plate located below the first metal plate and including a through hole, and a third metal plate located below the second metal plate and including a second groove, wherein the through hole is connected to the second groove, the first groove overlaps with the through hole, and one end of the through hole is closed by the first metal plate.

[0017] From a cross-sectional view, the width of the first groove may be different from the width of at least one of the through hole and the second groove.

[0018] The temperature difference between the lowest surface temperature and the highest surface temperature of the first metal plate may be 20° C. or more.

[0019] (Effects of the Invention)

[0020] The stage according to one embodiment of the present invention can realize a temperature gradient distribution with a large temperature difference between the inner area and the outer area. Therefore, even if the temperature of the outer area of ​​a wafer placed on the stage drops significantly, the temperature of the outer area of ​​the wafer can be corrected to make the temperature distribution in the wafer uniform. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 It is a schematic perspective view showing the structure of a stage according to one embodiment of the present invention.

[0022] Figure 2 It is a schematic plan view showing the structure of a stage according to one embodiment of the present invention.

[0023] Figure 3 This is a schematic cross-sectional view showing the structure of a stage according to one embodiment of the present invention.

[0024] Figure 4A It is a schematic plan view showing the structure of a circulating flow path of a stage according to one embodiment of the present invention.

[0025] Figure 4B It is a schematic plan view showing the structure of a circulating flow path of a stage according to one embodiment of the present invention.

[0026] Figure 5 This is a schematic cross-sectional view showing the structure of a heat insulating portion of a stage according to an embodiment of the present invention.

[0027] Figure 6 It is a schematic plan view showing the structure of the second metal plate of the stage according to one embodiment of the present invention.

[0028] Figure 7 It is a schematic plan view showing the structure of the second metal plate of the stage according to one embodiment of the present invention.

[0029] Figure 8 This is a graph for explaining the temperature gradient distribution of the stage involved in one embodiment of the present invention.

[0030] Fig. 9 This is a schematic cross-sectional view showing the structure of a heat insulating portion of a stage according to an embodiment of the present invention.

[0031] Fig.10 This is a schematic cross-sectional view showing the structure of a heat insulating portion of a stage according to an embodiment of the present invention.

[0032] Fig.11 This is a schematic cross-sectional view showing the structure of a heat insulating portion of a stage according to an embodiment of the present invention.

[0033] Fig.12 This is a schematic cross-sectional view showing the structure of a heat insulating portion of a stage according to an embodiment of the present invention.

[0034] Fig.13 It is a schematic plan view showing the structure of a stage according to one embodiment of the present invention.

[0035] Fig.14 This is a schematic cross-sectional view showing the structure of a heat insulating portion of a stage according to an embodiment of the present invention.

[0036] Fig.15 This is a schematic cross-sectional view showing the structure of a heat insulating portion of a stage according to an embodiment of the present invention.

[0037] Fig.16 This is a schematic cross-sectional view showing the structure of a heat insulating portion of a stage according to an embodiment of the present invention.

[0038] Fig.17 This is a schematic cross-sectional view showing the structure of a heat insulating portion of a stage according to an embodiment of the present invention.

[0039] Fig.18 This is a schematic cross-sectional view showing the structure of a heat insulating portion of a stage according to an embodiment of the present invention.

[0040] Fig.19 This is a schematic cross-sectional view showing the structure of a heat insulating portion of a stage according to an embodiment of the present invention.

[0041] Fig. 20 This is a schematic cross-sectional view showing the structure of a heat insulating portion of a stage according to an embodiment of the present invention.

[0042] Fig.21 This is a schematic cross-sectional view showing the structure of a heat insulating portion of a stage according to an embodiment of the present invention.

[0043] Fig. 22 This is a schematic cross-sectional view showing the structure of a heat insulating portion of a stage according to an embodiment of the present invention.

[0044] Fig.23 This is a schematic cross-sectional view showing the structure of an etching device according to one embodiment of the present invention.

[0045] Fig.24 This is a schematic cross-sectional view showing the structure of a CVD apparatus according to one embodiment of the present invention.

[0046] Fig.25 It is a schematic cross-sectional view showing the structure of a sputtering device according to one embodiment of the present invention.

[0047] Fig.26 This is a schematic cross-sectional view showing the structure of a vapor deposition device according to one embodiment of the present invention. DETAILED DESCRIPTION

[0048] Hereinafter, various embodiments of the invention disclosed in this application will be described with reference to the accompanying drawings. However, the present invention can be implemented in various forms within the scope of the gist thereof, and should not be construed as being limited to the description of the embodiments illustrated below.

[0049] In order to explain more clearly, the drawings may schematically show the width, thickness, shape, etc. of each part compared with the actual aspect, but this is only an example and does not limit the interpretation of the present invention. In addition, in this specification and each drawing, the same reference numerals are given to the elements having the same functions as the elements explained with reference to the drawings already shown, and there are cases where repeated explanations are omitted. In addition, for the convenience of explanation, the words such as above or below are used for explanation, and above or below respectively indicate the direction when the stage is used (when the wafer is placed).

[0050] In the present specification and drawings, the same reference numerals are used to generally represent the same or similar structures, and capital letters are further added to distinguish each of the multiple structures. When distinguishing multiple parts in a structure, the same reference numerals are used, and hyphens and natural numbers are used.

[0051] In this specification, the "inner area" of the stage refers to the area on the inside surrounded by the heat insulation part and the area overlapping with this area. In addition, in this specification, the "outer area" of the stage refers to the area outside the inner area. That is, the "outer area" is the area on the outer peripheral side of the stage. In addition, in this specification, the terms "inner area" and "outer area" are used not only for the stage but also for the wafer, and the "inner area" and "outer area" of the wafer refer to the areas overlapping with the "inner area" and "outer area" of the stage, respectively, when the wafer is placed on the stage.

[0052] <First Embodiment>

[0053] Reference Figures 1 to 8 , a stage 10 according to an embodiment of the present invention will be described.

[0054] Figure 1 It is a schematic perspective view showing the structure of the stage 10 according to one embodiment of the present invention. Figure 2 1 is a schematic plan view showing the structure of a stage 10 according to an embodiment of the present invention. Figure 2 In FIG. 1 , a circulation path 112 described later is indicated by a dotted line. Figure 3 1 is a cross-sectional view showing the structure of a stage 10 according to an embodiment of the present invention. Specifically, Figure 3 is shown along Figure 2 A cross-sectional view showing a portion of the stage 10 cut along line A1 - A2 is shown. Figure 4A and Figure 4B Each of them is a schematic cross-sectional view showing the structure of the circulation path 112 of the stage 10 according to one embodiment of the present invention.

[0055] like Figure 1 As shown, the stage 10 includes a plate portion 100 and a shaft portion 200. In the stage 10, a wafer is placed on a first surface 101 of the plate portion 100. The shaft portion 200 is connected to a second surface 102 of the plate portion 100 opposite to the first surface 101.

[0056] As the wafer placed on the stage 10, for example, silicon (Si), silicon carbide (SiC), sapphire, quartz, glass, gallium phosphide (GaP), gallium arsenide (GaAs), indium phosphide (InP), or gallium nitride (GaN) can be used, but it is not limited thereto. As described above, the wafer is placed on the first surface 101 of the plate 100, so a step for guiding the placed wafer can also be provided on the first surface 101.

[0057] The plate portion 100 includes a first metal plate 110, a second metal plate 120, a third metal plate 130, and a fourth metal plate 140. The first metal plate 110 to the fourth metal plate 140 are stacked in sequence. That is, the second metal plate 120 is located below the first metal plate 110, the third metal plate 130 is located below the second metal plate 120, and the fourth metal plate 140 is located below the third metal plate 130.

[0058] The first metal plate 110 and the second metal plate 120, the second metal plate 120 and the third metal plate 130, and the third metal plate 130 and the fourth metal plate 140 are connected to each other by welding, screwing, solid phase diffusion bonding, brazing, etc. As the brazing filler metal for brazing, for example, an alloy containing silver, copper and zinc, an alloy containing copper and zinc, copper containing a trace amount of phosphorus, an alloy containing aluminum, an alloy containing titanium, copper and nickel, an alloy containing titanium, zirconium and copper, or an alloy containing titanium, zirconium, copper and nickel can be used.

[0059] like Figure 2 As shown, in the top view, the first metal plate 110 has a circular shape. The second metal plate 120 to the fourth metal plate 140 overlapping the first metal plate 110 also have a circular shape. However, the shape of the first metal plate 110 to the fourth metal plate 140 is not limited to a circular shape. The shape of the first metal plate 110 to the fourth metal plate 140 can be appropriately determined according to the shape of the wafer, and the first metal plate 110 to the fourth metal plate 140 can also have an elliptical shape or a polygonal shape.

[0060] In addition, the thicknesses of the first metal plate 110 to the fourth metal plate 140 may be the same or different.

[0061] As the material of the first metal plate 110 to the fourth metal plate 140, for example, metals such as aluminum, titanium, iron, copper, nickel, molybdenum, tungsten, or gold, or alloys containing these metals are used. Iron-containing alloys are, for example, stainless steel, Kovar alloy, 42 alloy, etc. In addition, nickel-containing alloys are, for example, Inconel or Hastelloy alloy, etc. As described below, the first metal plate 110 is provided with a circulation path 112 and a heater 113 for circulating a cooling medium. The surface of the first metal plate 110 is equivalent to the first surface 101 of the plate portion 100, and the wafer is placed on the surface of the first metal plate 110. Therefore, in order to efficiently conduct the heat generated by the heater 113 to the wafer and to efficiently absorb the heat of the cooling medium circulating in the circulation path 112, the first metal plate 110 is preferably made of a material with high thermal conductivity. For example, as the material of the first metal plate 110, a metal or alloy with a thermal conductivity of more than 200 W / mK and less than 430 W / mK can be used. In addition, the first metal plate 110 to the fourth metal plate 140 may be made of the same material or different materials. When the first metal plate 110 to the fourth metal plate 140 are different, it is preferred that the metal or alloy contained in the first metal plate 110 to the fourth metal plate 140 has a 5×10 - 6 / K or above and 25×10 -6 In addition, it is preferred that the difference in thermal expansion coefficients between two adjacent metal plates is within 10×10 -6 The respective materials are selected in a manner as follows: / K. Therefore, since deformation of the stage 10 caused by the difference in thermal expansion is suppressed, the reliability of the stage 10 can be improved.

[0062] like Figure 3 As shown, the first metal plate 110 includes a circulation path 112 and a heater 113. The circulation path 112 and the heater 113 are arranged on the second metal plate 120 side of the first metal plate 110 and are closed by the second metal plate 120. In addition, the circulation path 112 is arranged in the inner area of ​​the plate portion 100, and the heater 113 is arranged in the outer area of ​​the plate portion 100.

[0063] A cooling medium such as liquid water or gas is introduced into the circulation path 112 from the inlet 112a, flows widely in the first metal plate 110 along the circulation path 112, and then is discharged to the outside of the first metal plate 110 from the outlet 112b (see Figure 2 The circulation path 112 may be a structure directly formed on the first metal plate 110, or a structure in which a tubular member is arranged in a groove provided in the first metal plate 110.

[0064] In the plan view, Figure 2The illustrated annular flow path 112 has a smooth curved shape (ie, the side of the annular flow path 112 has a smooth curved surface), but the structure of the annular flow path 112 is not limited thereto. Figure 4A As shown, in plan view, the annular flow path 112 may have a sawtooth shape. Figure 4B As shown, in a plan view, the circulation path 112 may have a concave-convex shape. That is, the width of the circulation path 112 may vary in the circumferential direction instead of being constant.

[0065] The heater 113 is driven under the control of a control device (not shown). The heater 113 is formed by, for example, using a heating wire and is arranged along the outer periphery of the first metal plate 110. The heater 113 may be buried in the first metal plate 110 or arranged in a groove provided in the first metal plate 110. For example, after the heater 113 is arranged in the groove of the first metal plate 110, it is covered with a thermal spray film or the like, thereby enabling the heater 113 to be arranged in the first metal plate 110. The heater 113 heats the outer area of ​​the wafer through the first metal plate 110.

[0066] In the plate portion 100, a heat insulating portion 150 is provided between the circulation path 112 disposed in the inner region of the first metal plate 110 and the heater 113 disposed in the outer region of the first metal plate 110. Figure 5 to Figure 7 The structure of the heat insulating portion 150 will be described.

[0067] Figure 5 1 is a schematic cross-sectional view showing the structure of the heat insulating portion 150 of the stage 10 according to one embodiment of the present invention. Figure 6 and Figure 7 Each of them is a schematic plan view showing the structure of the second metal plate 120 of the stage 10 according to one embodiment of the present invention. Specifically, Figure 6 and Figure 7 Each of them is a top view of the second metal plate 120 .

[0068] like Figure 5As shown, the heat insulating part 150 includes a first groove 111 formed in the first metal plate 110, a through hole 121 formed in the second metal plate 120, and a second groove 131 formed in the third metal plate 130. The first groove 111, the through hole 121, and the second groove 131 overlap each other. The first groove 111 has an opening surface on the second metal plate 120 side. The through hole 121 penetrates the second metal plate 120 and has opening surfaces on the first metal plate 110 side and the third metal plate 130 side. The second groove 131 has an opening surface on the second metal plate 120 side. The opening surface of the first groove 111 is substantially consistent with the opening surface of one end of the through hole 121, and the opening surface of the second groove 131 is substantially consistent with the opening surface of the other end of the through hole 121. That is, the heat insulating part 150 has a structure in which the first groove 111, the through hole 121, and the second groove 131 are connected to each other. In other words, the heat insulating part 150 has a closed space that passes through the second metal plate 120, has an upper surface formed on the first metal plate 110, and has a bottom surface formed on the third metal plate. The heat insulating part 150 may be a vacuum, or may be filled with a liquid or a gas. In addition, the heat insulating part 150 may be connected to an external vacuum pump or the like so as to be able to adjust the pressure, temperature or gas flow rate. As the gas filled in the heat insulating part 150 or circulated in the heat insulating part 150, an inert gas such as helium, argon or nitrogen may be used. In addition, the heat insulating part 150 may be filled with a heat insulating material.

[0069] In a plan view, the first groove 111, the through hole 121, and the second groove 131 are formed in a circumferential shape in the first metal plate 110, the second metal plate 120, and the third metal plate 131, respectively. Figure 6 As shown, the through holes 121 are also provided in the second metal plate 120 in a circumferential shape. That is, in the second metal plate 120, the inner area and the outer area are separated. In this case, when the second metal plate 120 is connected to the first metal plate 110 or the third metal plate 130, the second metal plate 120 is arranged in a manner that the separated inner area and the outer area of ​​the second metal plate 120 do not contact each other, and the second metal plate 120 is connected to the first metal plate 110 or the third metal plate 130. However, if the through holes 121 formed in the second metal plate 120 are provided over the entire circumference and the inner area and the outer area of ​​the second metal plate 120 are separated, there is a case where it is difficult to handle when connecting the second metal plate 120. Therefore, as Figure 7 As shown, connection areas 125a and 125b for connecting the inner area and the outer area may be provided on the second metal plate 120. Since the connection areas 125a and 125b may become heat conduction paths, it is preferred that the widths of the connection areas 125a and 125b are as small as possible. Figure 7, two connection regions 125a and 125b are shown, but at least one connection region 125 is sufficient in the second metal plate 120. The number of connection regions 125 corresponds to the number of through holes 121. For example, if the second metal plate 120 has three connection regions 125, the second metal plate 120 has three through holes 121.

[0070] In addition, the first groove 111 and the second groove 131 may be divided into a plurality of parts.

[0071] The first groove 111 is provided between the circulation path 112 and the heater 113. In other words, the heat insulating portion 150 is located between the circulation path 112 in the inner region and the heater 113 in the outer region. In addition, the heat insulating portion 150 is provided across the first metal plate 110, the second metal plate 120, and the third metal plate 130, and has a large space. Therefore, the heat insulating portion 150 can suppress heat conduction from the inner region to the outer region and heat conduction from the outer region to the inner region not only in the first metal plate 110, but also in the second metal plate 120 and the third metal plate 130. Therefore, in the stage 10, the temperature difference between the inner region and the outer region can be increased.

[0072] Figure 8 It is a graph for explaining the temperature gradient distribution of the stage 10 according to one embodiment of the present invention.

[0073] exist Figure 8 The horizontal axis of the graph shown shows the position of the surface of the first metal plate 110 along a predetermined direction (for example, the direction of the A1-A2 line) with the center position of the surface of the first metal plate 110 as zero, and the vertical axis of the graph shows the surface temperature of the surface of the first metal plate 110. The first position P1 and the second position P2 respectively show the positions of the heat insulating portion 150 and the heater 113. That is, the area between the two P1s corresponds to the inner area, and the area between P1 and P2 corresponds to the outer area.

[0074] In the stage 10, the inner region of the first metal plate 110 is cooled by the cooling medium flowing through the circulation path 112 of the inner region of the first metal plate 110. On the other hand, the outer region of the first metal plate 110 is heated by the heater 113 of the outer region of the first metal plate 110. The heat of the outer region of the first metal plate 110 is conducted to the inner region, but since the heat insulation part 150 is provided between the inner region and the outer region, the heat conduction path between the inner region and the outer region is limited, and the heat conduction from the outer region to the inner region is suppressed. Therefore, even if the outer region is heated by the heater 113, the temperature rise in the inner region is suppressed. In addition, due to the reduction of the heat flow caused by the heat insulation part 150, the temperature difference between the inner region and the outer region becomes larger. For example, the maximum temperature difference between the lowest surface temperature T0 measured near the center of the first metal plate 110 and the highest surface temperature T2 measured near the heater 113 is 20°C or more, preferably 60°C or more, and more preferably 100°C or more. The temperature difference between the inner and outer areas of the stage 10 can be adjusted by changing the power supplied to the heater 113 or the type, temperature, or flow rate of the cooling medium flowing through the circulation path 112 .

[0075] A flow path (not shown) for the cooling medium to flow is formed inside the shaft portion 200. Specifically, the shaft portion 200 supplies the cooling medium to the inlet 112a through the flow path, and receives the cooling medium discharged from the outlet 112b. One end of the shaft portion 200 is connected to the second surface 102 of the plate portion 100. The other end of the shaft portion 200 is connected to a supply source of the cooling medium. The supply source may be a tank, a pump, or a water pipe for holding the cooling medium, but is not limited thereto.

[0076] Furthermore, the lead wires of the heater 113 may be housed inside the shaft portion 200. Furthermore, in the case where an electrostatic chuck is provided, the wires connected to the electrostatic chuck may be housed inside the shaft portion 200.

[0077] In addition, the shaft portion 200 may be connected to a rotating unit. By connecting the shaft portion 200 to the rotating unit, the stage 10 can be rotated around the long axis of the shaft portion 200.

[0078] The structure of the stage 10 is described above. Here, the advantages of the stage 10 compared to the conventional stage will be described.

[0079] In the processing in the semiconductor device, there is a case where a wafer placed on a stage is heated. In this case, it is necessary to make the temperature distribution in the wafer uniform. In the conventional stage, when heated, there is a case where the temperature of the outer area is lower than the temperature of the inner area. In addition, depending on the semiconductor device, there is a case where the temperature of the inner area of ​​the wafer placed on the stage rises. For example, in the case of forming a film on a wafer in a CVD (Chemical Vapor Deposition) device or an ALD (Atomic Layer Deposition) device, the application of plasma causes the temperature of the central part of the wafer to rise locally, and the temperature of the inner area of ​​the wafer becomes higher than the temperature of the outer area. Therefore, in the conventional stage, a significant temperature drop is observed in the outer area of ​​the wafer.

[0080] On the other hand, in a semiconductor device using stage 10, the temperature difference between the inner area and the outer area of ​​stage 10 is large, so the above-mentioned significant temperature drop can be corrected and the temperature distribution in the wafer can be made uniform. In particular, in stage 10, since a temperature difference larger than the temperature difference that causes cracks in ceramics can be obtained, stage 10 can be applied to more semiconductor devices than a stage using ceramics.

[0081] However, the thermal expansion coefficient of the metal or alloy contained in the first metal plate 110 to the fourth metal plate 140 is larger than that of the ceramic. Therefore, in a conventional stage in which the temperature difference between the inner area and the outer area is increased only by controlling the circulation path 112 and the heater 113 without providing the heat insulating portion 150, there is a case where the stage is deformed due to thermal stress. In other words, in the case of a conventional stage in which the heat insulating portion 150 is not provided, the stage is deformed due to thermal stress, and therefore the temperature difference between the inner area and the outer area of ​​the stage cannot be increased. On the other hand, in the stage 10, the space of the heat insulating portion 150 contracts or expands, thereby reducing thermal stress. That is, the heat insulating portion 150 acts as a buffer for absorbing the thermal stress generated by the temperature difference between the inner area and the outer area of ​​the stage 10. In addition, in the stage 10, the heat insulating portion 150 is provided across the first metal plate 110, the second metal plate 120 and the third metal plate 130. Therefore, in the stage 10, not only the thermal stress of the first metal plate 110 on which the heater 113 is provided, but also the thermal stress of the second metal plate 120 and the third metal plate 130 which conduct the heat from the heater 113 is alleviated. Therefore, even if the temperature difference between the inner area and the outer area is increased, the stage 10 is difficult to deform.

[0082] Furthermore, even when thermal stress exceeding the yield stress is applied to the first metal plate 110 due to the elastic-plastic property of the metal, the heat insulating portion 150 deforms and similarly functions as a damper, thereby suppressing further deformation of the first metal plate 110 .

[0083] As described above, in the stage 10, the heat insulating portion 150 can suppress the heat from the heater 113 provided in the outer region from being conducted to the inner region. That is, the space formed by the heat insulating portion 150 reduces the cross-sectional area of ​​the heat conduction path connecting the outer region and the inner region of the plate portion 100, and thus the heat insulating portion 150 can function as a thermal seal / thermal choke. In the stage 10, the temperature difference between the inner region and the outer region is large, so, for example, when the stage 10 is applied to a wafer whose temperature in the outer region is significantly reduced, the temperature of the outer region of the wafer can be corrected, and the temperature distribution in the wafer can be made uniform.

[0084] Hereinafter, some modified examples of the stage 10 according to one embodiment of the present invention will be described. In addition, the modification of the structure of the stage 10 is not limited to the modified examples described below.

[0085] <Modification 1>

[0086] refer to Fig. 9 , a modification example of the stage 10 according to one embodiment of the present invention will be described. In addition, in the following, descriptions of structures that are the same as or similar to the structure of the stage 10 may be omitted.

[0087] Fig. 9 1 is a schematic cross-sectional view showing the structure of a heat insulating portion 150A of a stage 10A according to an embodiment of the present invention.

[0088] like Fig. 9 As shown, the heat insulating portion 150A includes a first groove 111A formed in the first metal plate 110 , a through hole 121A formed in the second metal plate 120 , and a second groove 131A formed in the third metal plate 130 .

[0089] The first groove 111A has a first width w 1 The through hole 121A and the second groove 131A both have a second width w 2 The first width w 1 Smaller than the second width w 2 Therefore, the side surface of the second groove 131A coincides with the side surface of the through hole 121A, but the side surface of the first groove 111A does not coincide with the side surface of the through hole 121A. In addition, one of the side surfaces of the first groove 111A may coincide with the side surface of the through hole 121A.

[0090] <Modification 2>

[0091] Reference Fig.10 , another modification of the stage 10 according to one embodiment of the present invention will be described. In addition, in the following, descriptions of structures that are the same as or similar to the structures of the stage 10 and the stage 10A may be omitted.

[0092] Fig.10 1 is a schematic cross-sectional view showing the structure of a heat insulating portion 150B of a stage 10B according to an embodiment of the present invention.

[0093] like Fig.10 As shown, the heat insulating portion 150B includes a first groove 111B formed in the first metal plate 110 , a through hole 121B formed in the second metal plate 120 , and a second groove 131B formed in the third metal plate 130 .

[0094] The first groove 111B has a first width w 1 The through hole 121B has a second width w 2 The second groove 131B has a third width w 3 The first width w 1 and the third width w 3 are smaller than the second width w 2 The first width w 1 Can be combined with the third width w 3 The same, or greater than the third width w 3 , can also be smaller than the third width w 3 Therefore, the side surfaces of the first groove 111B and the second groove 131B do not coincide with the side surfaces of the through hole 121B. Alternatively, one of the side surfaces of the first groove 111B or the second groove 131B may coincide with the side surface of the through hole 121B.

[0095] <Variation 3>

[0096] Reference Fig.11 , another modification of the stage 10 according to one embodiment of the present invention will be described. In addition, in the following, descriptions of structures that are the same as or similar to the structures of the stages 10 to 10B may be omitted.

[0097] Fig.11 1 is a schematic cross-sectional view showing the structure of a heat insulating portion 150C of a stage 10C according to an embodiment of the present invention.

[0098] like Fig.11 As shown, the heat insulating portion 150C includes a first groove 111C formed in the first metal plate 110 , a through hole 121C formed in the second metal plate 120 , and a second groove 131C formed in the third metal plate 130 .

[0099] The first groove 111C has a first width w 1 The through hole 121C has a second width w 2 The second groove 131C has a third width w 3 The first width w 1 and the third width w 3 Both are greater than the second width w 2 The first width w 1 Can be combined with the third width w 3 The same, or greater than the third width w 3 , can also be smaller than the third width w 3 Therefore, the side surfaces of the first groove 111C and the second groove 131C do not coincide with the side surfaces of the through hole 121C. Alternatively, one of the side surfaces of the first groove 111C or the second groove 131C may coincide with the side surface of the through hole 121C.

[0100] <Variation 4>

[0101] Reference Fig.12 , another modification of the stage 10 according to one embodiment of the present invention will be described. In addition, in the following, descriptions of structures that are the same as or similar to the structures of the stages 10 to 10C may be omitted.

[0102] Fig.12 1 is a schematic cross-sectional view showing the structure of a heat insulating portion 150D of a stage 10D according to an embodiment of the present invention.

[0103] like Fig.12 As shown, the heat insulating portion 150D includes a first groove 111D formed in the first metal plate 110 , a through hole 121D formed in the second metal plate 120 , and a second groove 131D formed in the third metal plate 130 .

[0104] The first groove 111D has a first width w 1 The through hole 121D has a 2-1 width w 21 and the 2-1 width w 21 Different 2-2 width w 22 That is, a step is formed in the through hole 121D. The second groove 131D has a third width w 3 .

[0105] exist Fig.12 In the heat insulation part 150D shown, the 2-1 width w 21 Smaller than the 2-2 width w 22 However, the structure of the heat insulating portion 150D is not limited thereto. 21It can also be larger than the 2-2 width w 22 In addition, the through hole 121D of the heat insulating portion 150D may also have three widths. Furthermore, the first groove 111D or the second groove 131D of the heat insulating portion 150D may also have more than two widths.

[0106] As described above in Modifications 1 to 4, in the stage 10 according to one embodiment of the present invention, by adjusting the width of the first groove 111, the width of the through hole 121, and the width of the second groove 131, it is possible to form the heat insulating portion 150 having various cross-sectional shapes. For example, by making the width of the first groove 111 larger than the widths of the through hole 121 and the second groove, the space of the heat insulating portion 150 in the first metal plate 110 is increased. As a result, the heat conduction path from the outer region to the inner region of the first metal plate 110 is reduced, and the temperature difference between the inner region and the outer region of the stage 10 can be increased. In addition, for example, when the thermal conductivity of the second metal plate 120 is larger than that of the first metal plate 110, the width of the through hole 121 is made larger than the width of the first groove. In this case, the heat from the heater 113 is easily transferred to the second metal plate 120, and by increasing the space of the heat insulating portion 150 in the second metal plate 120, the heat conduction path from the outer area to the inner area of ​​the second metal plate 120 can be reduced, and the temperature difference between the inner area and the outer area of ​​the stage 10 can be increased. In this way, the width of the first groove 111, the width of the through hole 121, and the width of the second groove 131 can be adjusted according to the heat conduction path from the outer area to the inner area of ​​the stage 10.

[0107] <Second Embodiment>

[0108] refer to Fig.13 as well as Fig.14 , the stage 11 according to one embodiment of the present invention will be described. In addition, in the following, the description of the structure that is the same as or similar to the structure of the stage 10 may be omitted.

[0109] Fig.13 It is a schematic plan view showing the structure of the stage 11 according to one embodiment of the present invention. Fig.14 It is a schematic cross-sectional view showing the structure of the stage 11 according to one embodiment of the present invention.

[0110] like Fig.14As shown, the stage 11 includes a plate portion 100 in which a first metal plate 110 having a first through hole 114, a second metal plate 120 having a second through hole 121 (equivalent to the through hole 121 in the first embodiment), a third metal plate 130 having a groove 131 (equivalent to the second groove 131 in the first embodiment), and a fourth metal plate 140 are stacked in sequence.

[0111] The first through hole 114, the second through hole 121 and the groove 131 overlap with each other. The first through hole 114 penetrates the first metal plate 110 and has opening surfaces on the first surface 101 side and the second metal plate 120 side of the stage 10. The opening surface of one end of the first through hole 114 is exposed in the first surface 101 of the stage 10, and the opening surface of the other end of the first through hole 114 is roughly consistent with the opening surface of one end of the second through hole 121. That is, the heat insulating part 151 has a structure in which the first through hole 114, the second through hole 121 and the groove 131 are interconnected. In other words, the heat insulating part 151 has a groove structure that penetrates the first metal plate 110 and the second metal plate 120 and forms a bottom surface on the third metal plate 130.

[0112] In a plan view, the first through hole 114, the second through hole 121, and the groove 131 are formed in a circular shape in the first metal plate 110, the second metal plate 120, and the third metal plate 130, respectively (see Fig.13 ). In addition, although not shown in the figure, Figure 7 As shown, a connection area may be provided in the first through hole 114 and the second through hole 121 to connect the inner area and the outer area. In this case, the connection area provided in the first metal plate 110 and the connection area provided in the second metal plate 120 may overlap or may not overlap.

[0113] The inside of the heat insulating portion 151 may be exposed to the air or filled with liquid or heat insulating material. In the stage 11, a part of the heat insulating portion 151 is exposed, and heat conduction from the outer area of ​​the plate portion 100 to the inner area and from the inner area to the outer area can be suppressed by heat dissipation from the heat insulating portion 151 to the outside of the stage 11. Therefore, in the stage 11, the temperature difference between the inner area and the outer area can be increased.

[0114] As described above, in the stage 11, the heat insulating portion 151 can function as a heat seal / thermal choke. In the stage 11, the temperature difference between the inner area and the outer area is large, so, for example, when the stage 11 is applied to a wafer whose temperature in the outer area is significantly lowered, the temperature of the outer area of ​​the wafer can be corrected, and the temperature distribution in the wafer can be made uniform.

[0115] Hereinafter, some modified examples of the stage 11 according to one embodiment of the present invention will be described. In addition, the modification of the structure of the stage 11 is not limited to the modified examples described below.

[0116] <Modification 1>

[0117] refer to Fig.15 , a modification example of the stage 11 according to one embodiment of the present invention will be described. In addition, in the following, descriptions of structures that are the same as or similar to the structure of the stage 11 may be omitted.

[0118] Fig.15 1 is a schematic cross-sectional view showing the structure of a heat insulating portion 151D of a stage 11D according to an embodiment of the present invention.

[0119] like Fig.15 As shown, the heat insulating portion 151D includes a first through hole 114D formed in the first metal plate 110 , a second through hole 121D formed in the second metal plate 120 , and a groove 131D formed in the third metal plate 130 .

[0120] The first through hole 114D has a first width w 1 The second through hole 121D has a second width w 2 The groove 131D has a third width w 3 The first width w 1 and the third width w 3 are smaller than the second width w 2 The first width w 1 Can be combined with the third width w 3 The same, or greater than the third width w 3 , can also be smaller than the third width w 3 Therefore, the side surfaces of the first through hole 114D and the groove 131D do not coincide with the side surfaces of the second through hole 121D. Alternatively, one of the side surfaces of the first through hole 114D or the groove 131D may coincide with the side surface of the second through hole 121D.

[0121] <Modification 2>

[0122] Reference Fig.16 , another modification of the stage 11 according to one embodiment of the present invention will be described. In addition, in the following, descriptions of structures that are the same as or similar to the structures of the stage 11 or the stage 11D may be omitted.

[0123] Fig.16 1 is a schematic cross-sectional view showing the structure of a heat insulating portion 151E of a stage 11E according to an embodiment of the present invention.

[0124] like Fig.16 As shown, the heat insulating portion 151E includes a first through hole 114E formed in the first metal plate 110 , a second through hole 121E formed in the second metal plate 120 , and a groove 131E formed in the third metal plate 130 .

[0125] The opening diameter of the first through hole 114E gradually decreases from the second metal plate 120 side toward the first surface 101 side of the stage 11E (the surface facing the first metal plate 110 ). That is, the side surface of the first through hole 114E has a tapered shape.

[0126] In addition, the first through hole 114E may also be Fig.16 The tapered shape of the first through hole 114E shown is the opposite structure. That is, the opening diameter of the first through hole 114E can gradually increase from the second metal plate 120 side toward the first surface 101 side of the stage 11E (the surface facing the first metal plate). In addition, the second through hole 121E and the groove 131E can also have a tapered shape.

[0127] As described above in Modification Example 1 and Modification Example 2, in the stage 11 involved in one embodiment of the present invention, by respectively adjusting the width of the first through hole 114, the width of the second through hole 121 and the width of the groove 131, the tapered shape of the first through hole 114, the tapered shape of the second through hole 121 and the tapered shape of the groove 131, it is possible to form an insulation portion 151 having various cross-sectional shapes.

[0128] <Third Embodiment>

[0129] Reference Fig.17 , the stage 12 according to one embodiment of the present invention will be described. In addition, in the following, the description of the structure that is the same as or similar to the structure of the stage 10 or the stage 11 may be omitted.

[0130] Fig.17 It is a schematic cross-sectional view showing the structure of the stage 12 according to one embodiment of the present invention.

[0131] like Fig.17 As shown, the plate portion 100 of the stage 12 includes a first metal plate 110 formed with a first groove 116 , a second metal plate 120 formed with a through hole 121 , a third metal plate 130 formed with a second groove 131 , and a fourth metal plate 140 .

[0132] The first groove 116, the through hole 121, and the second groove 131 overlap with each other. The first groove 116 has an opening surface on the first surface 101 side of the stage 12. The opening surface of one end of the through hole 121 is closed by the first metal plate 110. The opening surface of the other end of the through hole 121 is substantially consistent with the opening surface of the second groove 131. That is, the heat insulating portion 152 has a structure in which the through hole 121 and the second groove 131 are connected, and one end of the through hole 121 is closed by the first metal plate 110. In addition, the first groove 116 is provided above the heat insulating portion 152 in a manner overlapping with the heat insulating portion 152.

[0133] The inside of the heat insulating portion 152 may be a vacuum, or may be filled with a liquid, a gas, or a heat insulating material. In addition, the inside of the first groove 116 may be exposed to the air, or may be filled with a liquid or a heat insulating material. In the stage 12, the space formed by the heat insulating portion 152 reduces the heat conduction path connecting the outer area and the inner area of ​​the plate portion 100, so that the heat insulating portion 152 can function as a heat seal / thermal choke. Furthermore, by dissipating heat from the first groove 116 to the outside of the stage 12, heat conduction from the outer area to the inner area of ​​the first metal plate 110 and heat conduction from the inner area to the outer area can be suppressed. Therefore, in the stage 12, the temperature difference between the inner area and the outer area can be increased.

[0134] As described above, in the stage 12, the heat insulating portion 152 and the first groove 116 can function as a heat seal / thermal choke. In the stage 12, the temperature difference between the inner area and the outer area is large, so that, for example, when the stage 12 is applied to a wafer whose temperature in the outer area is significantly lowered, the temperature of the outer area of ​​the wafer can be corrected, and the temperature distribution in the wafer can be made uniform.

[0135] <Fourth Embodiment>

[0136] Reference Fig.18 , the stage 13 according to one embodiment of the present invention will be described. In addition, in the following, the description of the structure that is the same as or similar to the structure of the stage 10 may be omitted.

[0137] Fig.18 It is a schematic cross-sectional view showing the structure of the stage 13 according to one embodiment of the present invention.

[0138] like Fig.18 As shown, the stage 13 includes a plate portion 100 that is stacked in sequence with a first metal plate having a first through hole 114, a second metal plate 120 having a second through hole 121 (equivalent to the through hole 121 in the first embodiment), a third metal plate 130 having a groove 131 (equivalent to the second groove 131 in the first embodiment), and a fourth metal plate 140.

[0139] The first through hole 114, the second through hole 121 and the groove 131 overlap with each other. The first through hole 114 penetrates the first metal plate 110 and has opening surfaces on the first surface 101 side of the stage 10 and the second metal plate 120 side. The opening surface of one end of the first through hole 114 is exposed in the first surface 101 of the stage 10, and the opening surface of the other end of the first through hole 114 is roughly consistent with the opening surface of one end of the second through hole 121. That is, the heat insulating part 153 has a structure in which the first through hole 114, the second through hole 121 and the groove 131 are interconnected. In other words, the heat insulating part 153 has a groove structure that penetrates the first metal plate 110 and the second metal plate 120 and forms a bottom surface on the third metal plate 130.

[0140] Furthermore, in the stage 13, a circulation path 122 and a heater 123 are provided in the second metal plate 120 with the heat insulating portion 153 interposed therebetween. The circulation path 122 is provided on the first metal plate 110 side of the second metal plate 120 and is closed by the first metal plate 110. The heater 123 is also provided on the first metal plate 110 side of the second metal plate 120. Therefore, the inner area of ​​the first metal plate 110 is cooled by the cooling medium flowing in the circulation path 122, and the outer area of ​​the first metal plate 110 is heated by the heater 123. Since the heat insulating portion 153 is provided between the inner area and the outer area of ​​the first metal plate 110, heat conduction from the inner area to the outer area and heat conduction from the outer area to the inner area can be suppressed. Therefore, in the stage 13, the temperature difference between the inner area and the outer area can be increased.

[0141] As described above, the heat insulating portion 153 can function as a heat seal / thermal choke in the stage 13. In the stage 13, the temperature difference between the inner area and the outer area is large, so that, for example, when the stage 13 is applied to a wafer whose temperature in the outer area is significantly lowered, the temperature of the outer area of ​​the wafer can be corrected, and the temperature distribution in the wafer can be made uniform.

[0142] <Fifth Embodiment>

[0143] Reference Fig.19 , the stage 14 according to one embodiment of the present invention will be described. In addition, in the following, the description of the same or similar structure as the stage 10 to the stage 13 may be omitted.

[0144] Fig.19 It is a schematic cross-sectional view showing the structure of the heat insulating portion 154 of the stage 14 according to one embodiment of the present invention.

[0145] like Fig.19As shown, the stage 14 includes a plate portion 100 formed by stacking in sequence a first metal plate 110 having a first groove 111, a second metal plate 120 having a through hole 121 and a second groove 124, a third metal plate 130 having a third groove 131 (equivalent to the second groove 131 in the first embodiment), and a fourth metal plate 140.

[0146] The first groove 111, the through hole 121, and the third groove 131 overlap with each other in a plan view. That is, the stage 14 includes a first heat insulating portion 154-1 that interconnects the first groove 111, the through hole 121, and the third groove 131. In addition, the opening surface of the second groove 124 is closed by the third metal plate 130. That is, the stage 14 includes a second heat insulating portion 154-2 formed by the second groove 124. The second heat insulating portion 154-2 overlaps with the heater 113. The first heat insulating portion 154-1 and the second heat insulating portion 154-2 are not connected. That is, the stage 14 includes a plurality of heat insulating portions 154.

[0147] The first heat insulating portion 154-1 can suppress heat conduction from the inner area to the outer area and heat conduction from the outer area to the inner area. In addition, the second heat insulating portion 154-2 can suppress heat generated by the heater 113 provided in the outer area from being conducted to the inner area via the third metal plate 130. Therefore, in the stage 14, the temperature difference between the inner area and the outer area can be increased.

[0148] As described above, in the stage 14, the heat conduction from the heater 113 provided in the outer region to the inner region can be suppressed by the plurality of heat insulating portions 154. That is, since the space formed by the plurality of heat insulating portions 154 reduces the cross-sectional area of ​​the heat conduction path connecting the outer region and the inner region of the plate portion 100, the heat insulating portions 154 can function as a heat seal / thermal choke. In the stage 14, the temperature difference between the inner region and the outer region is large, so, for example, when the stage 14 is applied to a wafer whose temperature in the outer region is significantly reduced, the temperature of the outer region of the wafer can be corrected, and the temperature distribution in the wafer can be made uniform.

[0149] Hereinafter, some modified examples of the stage 14 according to one embodiment of the present invention will be described. In addition, the modification of the structure of the stage 14 is not limited to the modified examples described below.

[0150] <Modification 1>

[0151] Reference Fig. 20 , a modification example of the stage 14 according to one embodiment of the present invention will be described. In addition, in the following, descriptions of structures that are the same as or similar to the structure of the stage 14 may be omitted.

[0152] Fig. 201 is a schematic cross-sectional view showing the structure of a heat insulating portion 154F of a stage 14F according to an embodiment of the present invention.

[0153] like Fig. 20 As shown, the stage 14F includes a plate portion 100 formed by sequentially stacking a first metal plate 110 having a first groove 111F, a second metal plate 120 having a through hole 121F, a third metal plate 130 having a second groove 131F and a third groove 134F, and a fourth metal plate 140.

[0154] The first groove 111F, the through hole 121F, and the second groove 131F overlap with each other in a plan view. That is, the stage 14F includes a first heat insulating portion 154F-1 that interconnects the first groove 111F, the through hole 121F, and the second groove 131F. In addition, the opening surface of the third groove 134F is closed by the fourth metal plate 140. That is, the stage 14F includes a second heat insulating portion 154F-2 formed by the third groove 134F. The second heat insulating portion 153-2 overlaps with the heater 113. The first heat insulating portion 154F-1 and the second heat insulating portion 154-2F are not connected. That is, the stage 14F includes a plurality of heat insulating portions 154F.

[0155] <Modification 2>

[0156] Reference Fig.21 , another modification of the stage 14 according to one embodiment of the present invention will be described. In addition, in the following, descriptions of the same or similar structures as the stage 14 or the stage 14F may be omitted.

[0157] Fig.21 1 is a schematic cross-sectional view showing the structure of a heat insulating portion 154G of a stage 14G according to an embodiment of the present invention.

[0158] like Fig.21 As shown, the stage 14G includes a plate portion 100 formed by sequentially stacking a first metal plate 110 having a first groove 111G, a second metal plate 120 having a through hole 121G and a second groove 124G, a third metal plate 130 having a third groove 131G and a fourth groove 134G, and a fourth metal plate 140.

[0159] The first groove 111G, the through hole 121G and the third groove 131G overlap with each other in a plan view. That is, the stage 14G includes a first heat insulating portion 154G-1 that interconnects the first groove 111G, the through hole 121G and the third groove 131G. In addition, the opening surface of the second groove 124G is closed by the third metal plate 130, and the opening surface of the fourth groove 134G is closed by the fourth metal plate 140. That is, the stage 14G includes a second heat insulating portion 154G-2 formed by the second groove 124G, and a third heat insulating portion 154G-3 formed by the fourth groove 134G. The second heat insulating portion 154G-2 and the third heat insulating portion 154G-3 overlap with the heater 113. The first heat insulating portion 154G-1, the second heat insulating portion 154G-2 and the third heat insulating portion 154G-3 are not connected. That is, the stage 14G includes a plurality of heat insulating portions 154G.

[0160] <Variation 3>

[0161] Reference Fig. 22 , another modification of the stage 14 according to one embodiment of the present invention will be described. In addition, in the following, descriptions of the same or similar structures as the stages 14 to 14G may be omitted.

[0162] Fig. 22 1 is a schematic cross-sectional view showing the structure of a heat insulating portion 154H of a stage 14H according to an embodiment of the present invention.

[0163] like Fig. 22 As shown, the stage 14H includes a plate portion 100 formed by sequentially stacking a first metal plate 110 having a first groove 111H, a second metal plate 120 having a first through hole 121H and a second groove 124H, a third metal plate 130 having a third groove 131H and a second through hole 133H, and a fourth metal plate 140.

[0164] The first groove 111H, the first through hole 121H and the third groove 131H overlap with each other in a plan view. That is, the stage 14H includes a first heat insulating portion 154H-1 that interconnects the first groove 111H, the first through hole 121H and the third groove 131H. In addition, the second groove 124H is connected to the second through hole 133H, and one end of the second through hole 133H is closed by the fourth metal plate 140. That is, the stage 14H includes a second heat insulating portion 154H-2 formed by the second groove 124H and the second through hole 133H. The second heat insulating portion 154H-2 overlaps with the heater 113. The first heat insulating portion 154H-1 and the second heat insulating portion 154H-2 are not connected. That is, the stage 14H includes a plurality of heat insulating portions 154H.

[0165] As described above in Modifications 1 to 3, in the stage 14 according to one embodiment of the present invention, grooves and through holes may be combined to form a plurality of heat insulating portions 154. Furthermore, although Modifications 1 to 3 describe a structure in which other heat insulating portions 154 are formed in the outer region in addition to the heat insulating portion 154 that is the boundary between the inner region and the outer region, other heat insulating portions 154 may be formed in the inner region.

[0166] <Sixth Embodiment>

[0167] Reference Fig.23 , an etching device 50 according to an embodiment of the present invention will be described. The etching device 50 includes a stage 10. Therefore, the description of the same or similar structure as the structure of the stage 10 described in the first embodiment may be omitted below.

[0168] Fig.23 It is a schematic cross-sectional view showing the structure of an etching device 50 according to one embodiment of the present invention.

[0169] The etching device 50 can perform dry etching on various films. The etching device 50 has a chamber 502. The chamber 502 provides a space for etching a film such as a conductor, an insulator, or a semiconductor formed on a wafer.

[0170] The exhaust device 504 is connected to the chamber 502, thereby the chamber 502 can be set to a reduced pressure atmosphere. The chamber 502 is also provided with an introduction pipe 506 for introducing a reaction gas, and the reaction gas for etching is introduced into the chamber 502 through a valve 508. As the reaction gas, for example, carbon tetrafluoride (CF 4 ), octafluorocyclobutane (cC 4 F 8 ), perfluorocyclopentane (cC 5 F 10 ) or hexafluorobutadiene (C 4 F 6 ) and other fluorine-containing organic compounds.

[0171] The microwave source 512 can be provided at the upper part of the chamber 502 via the waveguide 510. The microwave source 512 has an antenna for supplying microwaves, etc., and outputs high-frequency microwaves such as 2.45 GHz microwaves and 13.56 MHz radio waves (RF). The microwaves generated by the microwave source 512 are propagated to the upper part of the chamber 502 through the waveguide 510, and are introduced into the chamber 502 through a window 514 made of quartz or ceramics. The reaction gas is plasmatized by the microwaves, and the film is etched by the electrons, ions or radicals contained in the plasma.

[0172] The stage 10 for placing the wafer is arranged at the lower part of the chamber 502. The power supply 524 is connected to the stage 10, and high-frequency power is applied to the stage 10, so that an electric field caused by microwaves is formed in a direction perpendicular to the surface of the stage 10 and the surface of the wafer. Magnets 516, 518 and 520 may also be arranged at the upper part and the side of the chamber 502. Magnets 516, 518 and 520 may be permanent magnets or electromagnets with electromagnetic coils. A magnetic field parallel to the stage 10 and the surface of the wafer is generated by magnets 516, 518 and 520. Through the cooperation of the magnetic field and the electric field caused by microwaves, the electrons in the plasma resonate under the action of the Lorentz force and are bound to the stage 10 and the surface of the wafer. As a result, a high-density plasma can be generated on the surface of the wafer.

[0173] The stage 10 is also connected to a heater power supply 530 for controlling a heater 113 provided on the stage 10. The stage 10 may also be connected, as an arbitrary structure, to a power supply 526 for an electrostatic chuck for fixing a wafer on the stage 10, a temperature controller 528 for controlling the temperature of a medium circulating inside the stage 10, and a rotation control device (not shown) for rotating the stage 10.

[0174] <Seventh Embodiment>

[0175] Reference Fig.24 , a CVD apparatus 60 according to an embodiment of the present invention will be described. The CVD apparatus 60 includes a stage 10. Therefore, the description of the same or similar structure as that of the stage 10 described in the first embodiment may be omitted below.

[0176] Fig.24 It is a schematic cross-sectional view showing the structure of a CVD apparatus 60 according to one embodiment of the present invention.

[0177] The CVD apparatus 60 has a chamber 602. The CVD apparatus 60 provides a place for chemically forming various films on a wafer by causing a chemical reaction of a reaction gas.

[0178] The exhaust device 604 is connected to the chamber 602, and the pressure in the chamber 602 can be reduced. The chamber 602 is also provided with an introduction pipe 606 for introducing a reaction gas, and the reaction gas for film formation is introduced into the chamber 602 through a valve 608. Various gases can be used as reaction gases according to the film to be prepared. The gas can be liquid at room temperature. For example, a thin film of silicon, silicon oxide, or silicon nitride can be formed by using silane, dichlorosilane, or tetraethoxysilane. In addition, a metal thin film of tungsten or aluminum can be formed by using tungsten hexafluoride or trimethylaluminum.

[0179] Similar to the etching device 50, the microwave source 612 can be arranged at the upper part of the chamber 602 via the waveguide 610. The microwave generated by the microwave source 612 is introduced into the interior of the chamber 602 through the waveguide 610. The reaction gas is plasmatized by the microwave, and the chemical reaction of the gas is promoted by the various active species contained in the plasma. The product obtained by the chemical reaction is accumulated on the wafer to form a thin film. As an arbitrary structure, a magnet 644 for increasing the density of the plasma can also be arranged in the chamber 602. The stage 10 is arranged at the lower part of the chamber 602, and the thin film can be deposited in a state where the wafer is placed on the stage 10. Similar to the etching device 50, magnets 616 and 618 can also be arranged on the side of the chamber 602.

[0180] The stage 10 is also connected to a heater power supply 630 for controlling the heater 113 provided on the stage 10. In the stage 10, as an arbitrary structure, a power supply 624 for supplying high-frequency power to the stage 10, a power supply 626 for an electrostatic chuck, a temperature controller 628 for controlling the temperature of a cooling medium circulating inside the stage 10, and a rotation control device (not shown) for rotating the stage 10 may also be connected.

[0181] <Eighth Implementation Method>

[0182] Reference Fig.25 , a sputtering device 70 according to an embodiment of the present invention will be described. The sputtering device 70 includes a stage 10. Therefore, the description of the same or similar structure as that of the stage 10 described in the second embodiment may be omitted below.

[0183] Fig.25 It is a schematic cross-sectional view showing the structure of a sputtering device 70 according to one embodiment of the present invention.

[0184] The sputtering device 70 has a chamber 702. The sputtering device 70 provides a place where high-speed ions collide with a target and target atoms generated during the collision are deposited on a wafer.

[0185] An exhaust device 704 for reducing the pressure in the chamber 702 is connected to the chamber 702. The chamber 702 is provided with an introduction pipe 706 and a valve 708 for introducing a sputtering gas such as argon into the chamber 702.

[0186] A target stage 710 holding a target containing a film forming material and functioning as a cathode is provided at the bottom of the chamber 702, and a target 712 is provided thereon. A high frequency power supply 714 is connected to the target stage 710, and plasma can be generated in the chamber 702 by the high frequency power supply 714.

[0187] The stage 10 may be disposed at the upper portion of the chamber 702. In this case, thin film formation is performed with the wafer disposed below the stage 10. Similar to the etching device 50 and the CVD device 60, a heater power supply 730 is connected to the stage 10. In addition, the stage 10 may be connected to a power supply 724 for supplying high-frequency power to the stage 10, a power supply 726 for an electrostatic chuck, a temperature controller 728, and a rotation control device (not shown) for rotating the stage 10.

[0188] Argon ions accelerated by the plasma generated in the chamber 702 collide with the target 712, thereby ejecting atoms of the target 712. When the gate 716 is opened, the ejected atoms fly toward a wafer disposed under the stage 10 and are deposited on the wafer.

[0189] Although Fig.25 The structure in which the stage 10 is disposed at the upper part of the chamber 702 and the target stage 710 is disposed at the lower part of the chamber 702 is shown, but the structure of the sputtering device 70 is not limited thereto, and the target 712 may be disposed above the stage 10. Alternatively, the stage 10 may be disposed in a manner such that the main surface of the wafer is arranged vertically relative to the horizontal plane, and the target stage 710 may be disposed opposite thereto.

[0190] <Ninth Embodiment>

[0191] Reference Fig.26 , a vapor deposition device 80 according to an embodiment of the present invention will be described. The vapor deposition device 80 includes a stage 10. Therefore, the description of the same or similar structure as the structure of the stage 10 described in the first embodiment may be omitted below.

[0192] Fig.26 It is a schematic cross-sectional view showing the structure of a vapor deposition device 80 according to one embodiment of the present invention.

[0193] The evaporation device 80 has a chamber 802. The evaporation device 80 provides a space for evaporating a material in an evaporation source 810 and depositing the evaporated material on a wafer.

[0194] An exhaust device 804 for making the chamber 802 highly vacuumed is connected to the chamber 802. An introduction pipe 806 for returning the chamber 802 to atmospheric pressure is provided in the chamber 802, and an inert gas such as nitrogen or argon is introduced into the chamber 802 through a valve 808.

[0195] The stage 10 can be set at the upper part of the chamber 802. The material is deposited in a state where the wafer is set under the stage 10. The stage 10 is also connected to a heater power supply 828, similar to the etching device 50, the CVD device 60 and the sputtering device 70. In addition, in the stage 10, as an arbitrary structure, a power supply 824 for an electrostatic chuck, a temperature controller 826 and a rotation control device 830 for rotating the stage 10 can also be connected. The stage 10 can also have a mask holder 816 for fixing the metal mask between the wafer and the evaporation source 810. Thereby, the metal mask can be arranged near the wafer so that the opening of the metal mask overlaps with the area where the material is deposited.

[0196] The evaporation source 810 is provided at the lower side of the chamber and filled with the material to be evaporated. The evaporation source 810 is provided with a heater for heating the material, and the heater is controlled by the control device 812. The chamber 802 is made into a high vacuum by using the exhaust device 804, and the evaporation source 810 is heated to vaporize the material, thereby starting evaporation. When the evaporation rate becomes constant, the gate 814 is opened, thereby starting to deposit the material on the wafer.

[0197] The etching apparatus 50, CVD apparatus 60, sputtering apparatus 70 and vapor deposition apparatus 80 described in the sixth to ninth embodiments use the stage 10. By using the stage 10, the temperature distribution in the wafer can be made uniform for a wafer whose temperature in the outer region is significantly lowered.

[0198] As the embodiments of the present invention, the embodiments described above can be appropriately combined and implemented as long as they are not contradictory. In addition, as long as the gist of the present invention is present, the addition, deletion, or design change of the constituent elements appropriately performed by those skilled in the art according to the embodiments is also included in the scope of the present invention.

[0199] In addition, even if there are other effects different from the effects obtained by the above-mentioned embodiments, effects that can be clearly seen from the description of this specification or effects that can be easily predicted by those skilled in the art can be understood as effects that can be obtained by the present invention.

[0200] (Explanation of Reference Numerals)

[0201] 10, 11, 12: stage; 50: etching device; 60: CVD device; 70: sputtering device;

[0202] 80: evaporation device; 100: plate portion; 101: first surface; 102: second surface;

[0203] 110: first metal plate; 111: groove; 112: circulation path; 112a: inlet;

[0204] 112b: outlet; 113: heater; 114: through hole; 116: groove; 120: second metal plate;

[0205] 121: through hole; 122: circulation path; 123: heater; 124: groove; 125: connection area;

[0206] 125a, 125a: connection area; 130: third metal plate; 131: groove; 133: through hole;

[0207] 134: groove; 140: fourth metal plate; 150, 151, 152, 153, 154: heat insulation part;

[0208] 200: shaft; 502: chamber; 504: exhaust device; 506: introduction pipe; 508: valve;

[0209] 510: waveguide; 512: microwave source; 514: window; 516, 518, 520: magnets;

[0210] 524, 526: power supply; 528: temperature controller; 530: heater power supply; 602: chamber;

[0211] 604: exhaust device; 606: introduction pipe; 608: valve; 610: waveguide; 612: microwave source;

[0212] 616, 618: magnet; 624, 626: power supply; 628: temperature controller; 630: power supply;

[0213] 644: magnet; 702: chamber; 704: exhaust device; 706: introduction pipe; 708: valve;

[0214] 710: target stage; 712: target; 714: high frequency power supply; 716: gate;

[0215] 724, 726: power supply; 728: temperature controller; 730: heater power supply; 802: chamber;

[0216] 804: exhaust device; 806: introduction pipe; 808: valve; 810: evaporation source; 812: control device;

[0217] 814: gate; 816: mask holder; 824: power supply; 826: temperature controller;

[0218] 828: Heater power supply; 830: Rotation control device.

Claims

1. A stage, wherein: include: a first metal plate; a second metal plate, located below the first metal plate; a heat insulating portion comprising a first space disposed in the first metal plate and a second space disposed in the second metal plate; as well as a circulating flow path and a heater, which are arranged to sandwich the heat insulating portion, The width of the heat insulating portion in the first metal plate is different from the width of the heat insulating portion in the second metal plate when viewed in cross section.

2. A stage, wherein: include: a first metal plate comprising a first slot; a second metal plate, located below the first metal plate and comprising a through hole; a third metal plate located below the second metal plate and comprising a second groove; and a circulating flow path and a heater, which are configured to sandwich the first groove, The first groove, the through hole, and the second groove are communicated with each other.

3. The stage according to claim 2, wherein: The width of the first groove is different from the width of at least one of the through hole and the second groove when viewed in cross section.

4. A stage, wherein: include: A first metal plate comprising a first through hole; a second metal plate, located below the first metal plate and comprising a second through hole; a third metal plate located below the second metal plate and comprising a groove; as well as a circulating flow path and a heater, which are arranged to sandwich the first through hole, The first through hole, the second through hole, and the groove are communicated with each other.

5. The stage according to claim 4, wherein: In cross-section, a width of the first through hole is different from a width of at least one of the second through hole and the groove.

6. The stage according to claim 4, wherein: At least one of the first through hole, the second through hole, and the groove has a tapered shape in cross-section.

7. The stage according to claim 6, wherein: The tapered shape becomes wider toward the surface of the first metal plate.

8. The stage according to claim 6, wherein: The tapered shape decreases in width toward a surface of the first metal plate.

9. A stage, wherein: include: a first metal plate comprising a first slot; a second metal plate, located below the first metal plate and comprising a through hole; a third metal plate located below the second metal plate and comprising a second groove; and a circulating flow path and a heater, which are configured to sandwich the first groove, The through hole is connected to the second groove, The first groove overlaps with the through hole, One end of the through hole is closed by the first metal plate.

10. The stage according to claim 9, wherein: The width of the first groove is different from the width of at least one of the through hole and the second groove when viewed in cross section.

11. A stage, wherein: include: a first metal plate comprising a first slot; a second metal plate, located below the first metal plate and comprising a first through hole; a third metal plate, located below the second metal plate and comprising a second groove; a circulating flow path and a heater, which are configured to sandwich the first groove; a first heat insulating portion that connects the first groove, the first through hole, and the second groove to each other; and A second heat insulating portion overlaps the heater in a plan view.

12. The stage according to claim 11, wherein: The second heat insulating portion includes a third groove provided in the second metal plate.

13. The stage according to claim 12, wherein: The second heat insulating portion further includes a second through hole provided in the third metal plate.

14. The stage according to claim 12, wherein: Also included is a third heat insulating portion overlapping the heater in a plan view, The third heat insulating portion includes a fourth groove provided in the third metal plate.

15. The stage according to any one of claims 1 to 14, wherein: The temperature difference between the lowest surface temperature and the highest surface temperature of the first metal plate is greater than 20°C.

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