Partition plate and epitaxial equipment
By designing a partition with through holes in the epitaxial equipment with inner, middle and outer areas, the uniform distribution of gas flow is ensured, and the problem of uneven thickness of the epitaxial layer is solved and the effect of consistency of thickness is improved.
Patent Information
- Application Number
- CN202510079254.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-17
- Publication Date
- 2025-04-18
AI Technical Summary
In the prior art, the thickness of the epitaxial layer cannot be uniform, resulting in a change in thickness from the center to the surroundings, affecting the implementation of subsequent processes.
A partition is designed for use in the intake path of the epitaxial device. The partition includes an inner zone through hole, a middle zone through hole and an outer zone through hole from the center outward, and the gas flow rate entering the pallet surface through the middle zone through hole is equal to the sum of the gas flow rate entering the pallet surface through the inner zone through hole and the outer zone through hole.
With this arrangement, it is possible to ensure that the thickness consistency of the thickness of the wafer epitaxial layer is high in the radial distribution, especially the thickness consistency at the corresponding positions of the middle region is improved.
Smart Images
Figure CN119843360A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of semiconductor equipment, and in particular to a partition and an epitaxial equipment. Background Art
[0002] Silicon epitaxy refers to the process of growing homogeneous epitaxial layers on a silicon substrate. This process is usually carried out at high temperature through a gas phase chemical reaction, using a polished silicon single crystal as a substrate. By controlling the growth conditions, an epitaxial layer with good crystal quality and consistent thickness can be obtained. Silicon epitaxial materials are important basic materials used in the manufacture of various silicon integrated circuits and discrete devices, especially in large-diameter silicon integrated circuit chip production lines, where silicon epitaxy is a commonly used starting material.
[0003] However, in the prior art, we have found that the thickness of the epitaxial layer cannot be uniform, and the thickness varies from the center to the periphery, which will affect the implementation of subsequent processes. Therefore, how to obtain an epitaxial layer with uniform thickness is a problem that the prior art needs to solve. Summary of the invention
[0004] The technical problem to be solved by the present invention is to provide a partition and an epitaxial device, which can improve the uniformity of the thickness of the epitaxial layer.
[0005] In order to solve the above problems, the present invention provides a partition for use on the air intake path of an epitaxial device, the partition comprising through holes for the passage of epitaxial gas, the partition comprising inner zone through holes, middle zone through holes and outer zone through holes from the center to the outside, the partition being configured so that the gas flow rate entering the tray surface through the middle zone through holes is equal to the sum of the gas flow rates entering the tray surface through the inner zone through holes and the outer zone through holes.
[0006] Optionally, the inner diameters of all the through holes are the same, and the total number of the through holes in the middle area of the partition is equal to the sum of the through holes in the inner area and the through holes in the outer area.
[0007] Optionally, the cross-sectional area of the through holes in the middle zone of the partition is equal to the sum of the cross-sectional area of the through holes in the inner zone and the cross-sectional area of the through holes in the outer zone.
[0008] Optionally, the material of the partition is quartz.
[0009] In order to solve the above problems, the present invention provides an epitaxial device, comprising: a tray, which is used to carry wafers; an air intake device, which is arranged toward the tray and is used to introduce epitaxial gas to the surface of the wafer; a partition is also included between the air intake device and the tray, the partition includes a through hole, and the epitaxial gas enters the surface of the tray through the through hole, and the center of the partition is aligned with the center position of the tray; the through holes of the partition include inner area through holes, middle area through holes and outer area through holes from the center to the outside, and the gas flow rate entering the surface of the tray through the middle area through holes is equal to the sum of the gas flow rates entering the surface of the tray through the inner area through holes and the outer area through holes.
[0010] Optionally, the inner diameters of all the through holes are the same, and the total number of the through holes in the middle area of the partition is equal to the sum of the through holes in the inner area and the through holes in the outer area.
[0011] Optionally, the cross-sectional area of the through holes in the middle zone of the partition is equal to the sum of the cross-sectional area of the through holes in the inner zone and the cross-sectional area of the through holes in the outer zone.
[0012] Optionally, the material of the partition is quartz.
[0013] Optionally, the tray is a rotating tray, which can drive the wafer to rotate during the epitaxial growth process.
[0014] In the present invention, the gas flow rate entering the tray surface through the middle zone through hole is equal to the sum of the gas flow rates entering the tray surface through the inner zone through hole and the outer zone through hole. Such an arrangement can ensure that the thickness of the epitaxial layer of the wafer has a high consistency along the radial distribution, especially can improve the thickness consistency of the position corresponding to the middle zone. BRIEF DESCRIPTION OF THE DRAWINGS
[0015] Attached Figure 1 Shown is a schematic structural diagram of a specific implementation of the epitaxial device of the present invention.
[0016] Attached Figure 2 Shown is a schematic structural diagram of a partition in a specific implementation manner of the epitaxial device of the present invention.
[0017] Attached Figure 3 Shown is a schematic structural diagram of another specific implementation of a partition of a specific implementation of the epitaxial device of the present invention.
[0018] Attached Figure 4 The figure shows a schematic structural diagram of another specific implementation of the partition of the specific implementation of the epitaxial device of the present invention. DETAILED DESCRIPTION
[0019] The specific implementation of the partition and epitaxial device provided by the present invention will be described in detail below with reference to the accompanying drawings.
[0020] Attached Figure 1The structure diagram of the specific embodiment of the epitaxial device of the present invention is shown in FIG. The epitaxial device comprises a tray 10 and an air inlet device 11 , and a partition plate 12 is further provided between the air inlet device and the tray.
[0021] The tray 10 is used to carry the wafer. The gas inlet device 11 is arranged toward the tray 10 and is used to introduce epitaxial gas to the surface of the wafer. The wafer can be a wafer of any common semiconductor material including silicon, germanium, silicon carbide, GaAs, and GaN.
[0022] A partition 12 is further provided between the gas inlet device 11 and the tray 10. The material of the partition 12 is quartz or any other common material used for epitaxial equipment, such as stainless steel. The partition 12 includes a through hole 13. The epitaxial gas enters the surface of the tray 10 through the through hole 13, and the center of the partition 12 is aligned with the center position of the tray 10.
[0023] Attached Figure 2 1 is a schematic diagram of the structure of the partition 12. The through holes 13 of the partition 12 include inner zone through holes 131, middle zone through holes 132 and outer zone through holes 133 from the center outward. Figure 2 The figure shows half of the symmetrical structure, and the other half has the same structure. For a specific implementation of a 300mm silicon wafer, the maximum control range of the inner zone through hole 131 of the half-side symmetrical structure is about 40-60mm from the center, preferably 50mm; the maximum control range of the middle zone through hole 132 is about 90-110mm from the center, preferably 100mm; the control range of the outer zone through hole 133 is about 140-160mm from the center, preferably 150mm. For wafers of other sizes, the above control ranges can be proportionally enlarged or reduced.
[0024] In this specific embodiment, the inner diameters of all through holes are the same, and the total number of the middle zone through holes 132 of the partition 12 is 6, which is equal to the sum of the number of the inner zone through holes 131 (3) plus the number of the outer zone through holes 133 (3). The opposite side is the same. With the above-mentioned setting, the gas flow rate entering the surface of the tray 10 through the middle zone through holes 132 can be equal to the sum of the gas flow rates entering the surface of the tray 10 through the inner zone through holes 131 and the outer zone through holes 133. Such a setting can ensure that the thickness of the epitaxial layer of the wafer has a high consistency along the radial distribution, especially can improve the thickness consistency of the position corresponding to the middle zone.
[0025] The epitaxial layer growth range controlled by the inner zone through holes is about 40mm, the epitaxial layer growth range controlled by the outer zone through holes is about 35mm, and the epitaxial layer growth range controlled by the middle zone through holes is about 75mm, which is the sum of the inner zone through holes and the outer zone through holes, which deviates from the current design.
[0026] Attached Figure 3The figure shows a schematic diagram of the structure of another specific embodiment of the partition. In this specific embodiment, the inner diameters of all through holes are the same, and the total number of the middle zone through holes 232 of the partition 22 is 3, which is equal to the sum of the number of the inner zone through holes 231 (1) plus the number of the outer zone through holes 233 (2). The opposite side can adopt the same setting, or the setting of the previous specific embodiment. With the above setting, the gas flow rate entering the surface of the tray 10 through the middle zone through holes 232 can be equal to the sum of the gas flow rates entering the surface of the tray 10 through the inner zone through holes 231 and the outer zone through holes 233.
[0027] Attached Figure 4 The figure shows a schematic diagram of the structure of another specific embodiment of the partition. The through hole 33 of the partition 32 includes an inner zone through hole 331, a middle zone through hole 332 and an outer zone through hole 333 from the center outward. For a specific embodiment of a 300 mm silicon wafer, the control range of the inner zone through hole 331 is about 40 mm, the control range of the outer zone through hole 333 is about 35 mm, and the control range of the middle zone through hole 332 is about 75 mm. For wafers of other sizes, the above control range can be proportionally enlarged or reduced.
[0028] In this specific embodiment, the arrangement adopted is to make the cross-sectional area of the middle zone through hole 332 of the partition 32 equal to the sum of the cross-sectional area of the inner zone through hole 331 and the cross-sectional area 333 of the outer zone through hole. The cross-sectional areas of the through holes can be the same or different. The opposite side can adopt the same arrangement, or the arrangement of some of the above specific embodiments can be adopted. By adopting the above arrangement, the gas flow rate entering the tray surface through the middle zone through hole can also be equal to the sum of the gas flow rates entering the tray surface through the inner zone through hole and the outer zone through hole.
[0029] Of course, in other specific implementations, the gas flow rates between different through holes may be adjusted to achieve the goal of making the sum of the internal and external flows equal to the flow rate in the middle area.
[0030] The above specific embodiments also include a specific embodiment of a partition, which is used on the air intake path of the epitaxial equipment, and the partition includes through holes, and the through holes are used for the epitaxial gas to pass through. The partition includes inner zone through holes, middle zone through holes and outer zone through holes from the center to the outside, and the partition is configured so that the gas flow rate entering the tray surface through the middle zone through holes is equal to the sum of the gas flow rates entering the tray surface through the inner zone through holes and the outer zone through holes.
[0031] The above is only a preferred embodiment of the present invention. It should be pointed out that ordinary technicians in this technical field can make several improvements and modifications without departing from the principle of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.
Claims
1. A partition plate used in the gas inlet path of an epitaxial device, the partition plate comprising a through hole for the epitaxial gas to pass through, characterized in that: The partition includes inner zone through holes, middle zone through holes and outer zone through holes from the center outward, and the partition is configured so that the gas flow entering the tray surface through the middle zone through holes is equal to the sum of the gas flow entering the tray surface through the inner zone through holes and the outer zone through holes.
2. The separator according to claim 1, characterized in that The inner diameters of all the through holes are the same, and the total number of the through holes in the middle area of the partition is equal to the sum of the through holes in the inner area and the through holes in the outer area.
3. The separator according to claim 1, characterized in that The cross-sectional area of the through holes in the middle area of the partition is equal to the sum of the cross-sectional area of the through holes in the inner area and the cross-sectional area of the through holes in the outer area.
4. The separator according to claim 1, characterized in that The material of the partition is quartz.
5. An epitaxial device comprising A tray, wherein the tray is used to carry wafers; An air inlet device is arranged toward the tray and is used to introduce epitaxial gas to the surface of the wafer; characterized in that: A partition is also included between the air intake device and the tray, and the partition includes a through hole, through which the epitaxial gas enters the tray surface, and the center of the partition is aligned with the center position of the tray; the through holes of the partition include inner zone through holes, middle zone through holes and outer zone through holes from the center to the outside, and the gas flow entering the tray surface through the middle zone through holes is equal to the sum of the gas flow entering the tray surface through the inner zone through holes and the outer zone through holes.
6. The epitaxial device according to claim 5, characterized in that: The inner diameters of all the through holes are the same, and the total number of the through holes in the middle area of the partition is equal to the sum of the through holes in the inner area and the through holes in the outer area.
7. The epitaxial device according to claim 5, characterized in that: The cross-sectional area of the through holes in the middle area of the partition is equal to the sum of the cross-sectional area of the through holes in the inner area and the cross-sectional area of the through holes in the outer area.
8. The epitaxial device according to claim 5, characterized in that: The material of the partition is quartz.
9. The epitaxial device according to claim 5, characterized in that: The tray is a rotating tray, which can drive the wafer to rotate during the epitaxial growth process.