Hyperbolic function memristor equivalent circuit model

Abstract

The invention discloses a hyperbolic function memristor equivalent circuit model, and the model comprises an integral operation module U1 which is used for achieving the integral operation of an input voltage, and generating a magnetic flux; the multiplier U2 is used for performing multiple operation on the magnetic flux to generate a required second-order signal; the inverting amplification module U3 is used for performing inverting amplification and hyperbolic function operation on the magnetic flux to generate a required hyperbolic sinusoidal signal; the inverse addition operation module U4 is used for performing addition operation and inverse amplification operation on the second-order signal and the hyperbolic sinusoidal signal to obtain a required hyperbolic function signal; and the multiplier U5 is used for multiplying the input voltage by the hyperbolic function signal output by the inverting addition operation module U4 to obtain the magnitude of memristor current. Therefore, the memristor equivalent circuit model built based on the hyperbolic sine function mathematical model can realize volt-ampere characteristics of the magnetic control memristor, and can widely replace memristor devices to realize circuit design, experiment and application related to the memristor.

Description

Technical Field

[0001] The present application relates to the technical field of circuit design, and in particular to an equivalent circuit model of a hyperbolic function memristor. Background Art

[0002] Memristor is a nonlinear resistor with memory function. Its resistance value can be changed by controlling current or voltage. It is considered to be the fourth basic passive electronic device besides resistor, capacitor and inductor. Memristor devices have the characteristics of simple structure, small size, low energy consumption, high density and non-volatility. Due to its unique electrical properties, it has good application prospects in resistive storage, artificial neural network and artificial intelligence.

[0003] However, the manufacturing cost of memristor devices is high and the manufacturing conditions are strict. It is not realistic to prepare a large number of memristor devices to meet engineering applications. Summary of the invention

[0004] In view of this, an embodiment of the present application provides a hyperbolic function memristor equivalent circuit model.

[0005] According to the first aspect of the present application, an embodiment of the present application provides a hyperbolic function memristor equivalent circuit model, and the hyperbolic function memristor equivalent circuit model is designed based on the following mathematical relationship: ； ； ； in, and are the current and voltage of the memristor, and the variable is the magnetic flux of the memristor, is the charge of the memristor, is the memristor value, a, b, c are the coefficients of the equivalent circuit model; The equivalent circuit model of the hyperbolic function memristor includes: The integral operation module U1 is used to realize the integral operation of the input voltage and generate magnetic flux; Multiplier U2 is used to perform multiplication operation on the magnetic flux to generate the required second-order signal; The inverting amplifier module U3 is used to perform inverting amplification and hyperbolic function operation on the magnetic flux to generate the required hyperbolic sine signal; The inverting addition module U4 is used to perform addition operation and inverting amplification operation on the second-order signal and the hyperbolic sine signal to obtain the required hyperbolic function signal; The multiplier U5 is used to multiply the input voltage and the hyperbolic function signal output by the inverting addition operation module U4 to obtain the memristor current.

[0006] Optionally, the hyperbolic function memristor equivalent circuit model also includes: Voltage follower U6, the input end of the voltage follower U6 is used to access the input voltage, and the output end is respectively connected to the input end of the integral operation module U1 and the first input end of the multiplier U5, for achieving isolation from the previous stage circuit connected to the hyperbolic function memristor equivalent circuit model.

[0007] Optionally, the voltage follower U6 includes a first operational amplifier U61; the non-inverting input terminal of the first operational amplifier U61 is used to access the input voltage, and the inverting input terminal is connected to the output terminal.

[0008] Optionally, the integral operation module U1 includes an integrator U11; the input end of the integrator U11 is used to access the input voltage, and the output end is respectively connected to the first input end of the multiplier U2, the second input end of the multiplier U2 and the input end of the inverting amplifier module U3.

[0009] Optionally, the integrator U11 includes a second operational amplifier U111, a first capacitor C1, a first resistor R1, a second resistor R2 and a third resistor R3; the non-inverting input terminal of the second operational amplifier U111 is respectively connected to one end of the first resistor R1, one end of the second resistor R2 and one end of the first capacitor C1; the output terminal of the second operational amplifier U111 is respectively connected to the other end of the second resistor R2 and the other end of the first capacitor C1; the inverting input terminal of the second operational amplifier U111 is connected to one end of the third resistor R3, and the other end of the third resistor R3 is used for grounding.

[0010] Optionally, the inverting amplifier module U3 includes an inverting amplifier U31 and a function conversion circuit U32; the input end of the inverting amplifier U31 is connected to the output end of the integral operation module U1, and the output end is connected to the input end of the function conversion circuit U32.

[0011] Optionally, the inverting amplifier U31 includes a third operational amplifier U311, a fourth resistor R4, a fifth resistor R5 and a sixth resistor R6; the in-phase input terminal of the third operational amplifier U311 is respectively connected to one end of the fourth resistor R4 and one end of the fifth resistor R5; the output terminal of the third operational amplifier U311 is connected to the other end of the fifth resistor R5; the inverting input terminal of the third operational amplifier U311 is connected to one end of the sixth resistor R6, and the other end of the sixth resistor R6 is used for grounding.

[0012] Optionally, the inverting addition operation module U4 includes an adder U41 and an inverting amplifier U42; the first input end of the adder U41 is connected to the output end of the inverting amplifier module U3, the second input end is connected to the output end of the multiplier U2, and the output end of the adder U41 is connected to the input end of the inverting amplifier U42.

[0013] Optionally, the adder U41 includes a fourth operational amplifier U411, a seventh resistor R7, an eighth resistor R8, a ninth resistor R9 and a tenth resistor R10; the in-phase input terminal of the fourth operational amplifier U411 is connected to one end of the seventh resistor R7, the eighth resistor R8 and the ninth resistor R9, respectively; the other end of the ninth resistor R9 is connected to the output terminal of the fourth operational amplifier U411; the inverting input terminal of the fourth operational amplifier U411 is connected to one end of the tenth resistor R10, and the other end of the tenth resistor R10 is used for grounding.

[0014] Optionally, the multiplier U2 is a two-quadrant multiplier or a four-quadrant multiplier.

[0015] Optionally, the multiplier U5 is a two-quadrant multiplier or a four-quadrant multiplier.

[0016] The hyperbolic function memristor equivalent circuit model provided in the embodiment of the present application is configured with an integral operation module U1 for realizing the integral operation of the input voltage to generate magnetic flux; a multiplier U2 for performing a multiple operation on the magnetic flux to generate the required second-order signal; an inverting amplification module U3 for performing an inverting amplification and a hyperbolic function operation on the magnetic flux to generate the required hyperbolic sine signal; an inverting addition operation module U4 for performing an addition operation and an inverting amplification operation on the second-order signal and the hyperbolic sine signal to obtain the required hyperbolic function signal; and a multiplier U5 for performing an input voltage multiplication operation. The voltage and the hyperbolic function signal output by the inverting addition operation module U4 are multiplied to obtain the memristor current; in this way, the memristor equivalent circuit model built based on the hyperbolic sine function mathematical model can realize the volt-ampere characteristics of the magnetically controlled memristor, and because the devices that make up the memristor equivalent circuit model are all relatively simple devices, the manufacturing cost is low and the manufacturing conditions are loose. Therefore, compared with the memristor device, the cost can be greatly reduced, and it can widely replace the memristor device to realize the circuit design, experiment and application related to the memristor, which has important practical significance for the characteristics and application research of the memristor.

[0017] The above description is only an overview of the technical solution of the present application. In order to more clearly understand the technical means of the present application, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1This is a structural schematic diagram of an equivalent circuit model of a hyperbolic function memristor in an embodiment of the present application; Figure 2 It is a structural schematic diagram of another hyperbolic function memristor equivalent circuit model in an embodiment of the present application; Figure 3 This is a schematic diagram of the structure of the voltage follower U6 in the embodiment of the present application; Figure 4 This is a schematic diagram of the structure of the integrator U11 in the embodiment of the present application; Figure 5 This is a schematic diagram of the structure of the inverting amplifier U31 in the embodiment of the present application; Figure 6 Schematic diagram of the structure of the adder U41 in the embodiment of the present application. DETAILED DESCRIPTION

[0019] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application.

[0020] Common ideal memristor mathematical models include piecewise linear model, nonlinear smooth memristor model, hyperbolic function memristor model, etc. Among them, the hyperbolic function memristor model is mostly designed based on the following memristor derivative relationship: ; The resulting hyperbolic function memristor model is: . However, the relationship between the memristor values ​​obtained based on the flux-charge characteristics of the logarithmic memristor is: To this end, the applicant proposes a hyperbolic memristor equivalent circuit model formed by the memristor value obtained based on the flux-charge characteristics of the logarithmic memristor, which can expand the application scope and scenarios of the hyperbolic memristor equivalent circuit model and replace the hyperbolic memristor device for memristor-related circuit design, experiments and applications.

[0021] The embodiment of the present application provides a hyperbolic function memristor equivalent circuit model, which is designed based on the following mathematical relationship: ； (1) ； (2) ； (3) in, and are the current and voltage of the memristor, and the variable is the magnetic flux of the memristor, is the charge of the memristor, is the memristor’s memristor value, a, b, c are the coefficients of the equivalent circuit model.

[0022] The equivalent circuit model of the hyperbolic function memristor is as follows: Figure 1 As shown, including: The integral operation module U1 is used to realize the integral operation of the input voltage to generate the magnetic flux; the multiplier U2 is used to perform the multiplication operation on the magnetic flux to generate the required second-order signal; the inverting amplifier module U3 is used to perform the inverting amplification and the hyperbolic function operation on the magnetic flux to generate the required hyperbolic sine signal; the inverting addition operation module U4 is used to perform the addition operation and the inverting amplification operation on the second-order signal and the hyperbolic sine signal to obtain the required hyperbolic function signal; the multiplier U5 is used to multiply the input voltage and the hyperbolic function signal output by the inverting addition operation module U4 to obtain the memristor current.

[0023] In this embodiment, formula (1) is a general mathematical expression of the flux charge characteristic of a logarithmic memristor. Wherein, a, b, and c are all constants not equal to 0. Formula (2) is the memristor memristor value Formula (3) is the mathematical expression of the current-voltage characteristic of the memristor.

[0024] In this embodiment, the circuit principle of the equivalent circuit model of the hyperbolic function memristor is as follows: the integral operation module U1 is used to generate magnetic flux based on the input voltage, and the generated magnetic flux is used as the input of the multiplier U2 and the inverting amplifier module U3. Both input ends of the multiplier U2 are connected to the output end of the integral operation module U1 to obtain the required second-order signal. The inverting amplifier module U3 is used to perform hyperbolic function operation and inverting voltage amplification of the magnetic flux to generate the required hyperbolic sine signal. The inverting addition operation module U4 is used to perform inverting addition operation on the second-order signal and the hyperbolic sine signal to obtain the required hyperbolic function signal. The multiplier U5 is used to realize the multiplication of the hyperbolic function signal and the input voltage to obtain the final memristor current.

[0025] In some implementations, the multiplier U2 can be constructed using existing commercial electronic components, such as an existing two-quadrant multiplier.

[0026] In some implementations, the multiplier U2 can be constructed using existing commercial electronic components, such as an existing four-quadrant multiplier.

[0027] In some implementations, the multiplier U2 can use an existing AD539.

[0028] In some implementations, the multiplier U2 may use an existing AD734.

[0029] In some implementations, the multiplier U5 can be constructed using existing commercial electronic components, such as an existing two-quadrant multiplier.

[0030] In some implementations, the multiplier U5 can be constructed using existing commercial electronic components, such as an existing four-quadrant multiplier.

[0031] In some implementations, the multiplier U5 may use an existing AD539.

[0032] In some implementations, the multiplier U5 may use an existing AD734.

[0033] The hyperbolic memristor equivalent circuit model provided in the embodiment of the present application is configured with an integral operation module U1 for realizing the integral operation of the input voltage to generate magnetic flux; a multiplier U2 for performing a multiple operation on the magnetic flux to generate the required second-order signal; an inverting amplification module U3 for performing an inverting amplification and a hyperbolic function operation on the magnetic flux to generate the required hyperbolic sine signal; an inverting addition operation module U4 for performing an addition operation and an inverting amplification operation on the second-order signal and the hyperbolic sine signal to obtain the required hyperbolic function signal; and a multiplier U5 for performing an input voltage multiplication operation. The voltage and the hyperbolic function signal output by the inverting addition operation module U4 are multiplied to obtain the memristor current; in this way, the memristor equivalent circuit model built based on the hyperbolic sine function mathematical model can realize the volt-ampere characteristics of the magnetically controlled memristor, and because the devices that make up the memristor equivalent circuit model are all relatively simple devices, the manufacturing cost is low and the manufacturing conditions are loose. Therefore, compared with the memristor device, the cost can be greatly reduced, and it can widely replace the memristor device to realize the circuit design, experiment and application related to the memristor, which has important practical significance for the characteristics and application research of the memristor.

[0034] In an optional embodiment, if Figure 2 As shown, the equivalent circuit model of the hyperbolic function memristor also includes: Voltage follower U6, the input end of the voltage follower U6 is used to access the input voltage, and the output end is respectively connected to the input end of the integral operation module U1 and the first input end of the multiplier U5, for achieving isolation from the previous stage circuit connected to the hyperbolic function memristor equivalent circuit model.

[0035] In this embodiment, since the hyperbolic function memristor equivalent circuit model is generally used in circuit design, experiments and applications related to memristors, the hyperbolic function memristor equivalent circuit model may also need to be connected to other circuits, such as a front-stage circuit connected to the hyperbolic function memristor equivalent circuit model. In order to avoid the influence of the front-stage circuit connected to the hyperbolic function memristor equivalent circuit model on the hyperbolic function memristor equivalent circuit model, in this embodiment, a voltage follower U6 is provided. The voltage follower U6 has the characteristics of high input impedance and low output impedance. The input current rarely enters the voltage follower U6, which can play a role in isolating from the front-stage circuit. Its output voltage is equal to the input voltage, which is set to .

[0036] In this embodiment, by providing the voltage follower U6 , it is possible to isolate the preceding circuit connected to the hyperbolic function memristor equivalent circuit model, thereby avoiding the influence of the preceding circuit on the hyperbolic function memristor equivalent circuit model.

[0037] In an optional embodiment, if Figure 3 As shown, the voltage follower U6 includes a first operational amplifier U61; the non-inverting input terminal of the first operational amplifier U61 is used to access the input voltage, and the inverting input terminal is connected to the output terminal.

[0038] In this embodiment, if Figure 3 As shown, the non-inverting input terminal of the first operational amplifier U61 is a port displayed as +, the inverting input terminal is a port displayed as -, and the output terminal is a port displayed as OUT.

[0039] In this embodiment, by using the first operational amplifier U61 as a voltage follower, a voltage following effect can be achieved using simple electronic components.

[0040] In an optional embodiment, if Figure 2 As shown, the integral operation module U1 includes an integrator U11; the input end of the integrator U11 is used to access the input voltage, and the output end is respectively connected to the first input end of the multiplier U2, the second input end of the multiplier U2 and the input end of the inverting amplifier module U3.

[0041] In this embodiment, the integrator U11 is used to generate magnetic flux, and the generated magnetic flux is used as input to the first input terminal and the second input terminal of the multiplier U2, and as input to the inverting amplifier module U3.

[0042] In this embodiment, an integrator is provided to generate magnetic flux, so that the generation of magnetic flux can be achieved through simple electronic components.

[0043] In an optional embodiment, if Figure 4As shown, the integrator U11 includes a second operational amplifier U111, a first capacitor C1, a first resistor R1, a second resistor R2 and a third resistor R3; the non-inverting input terminal of the second operational amplifier U111 is respectively connected to one end of the first resistor R1, one end of the second resistor R2 and one end of the first capacitor C1; the output terminal of the second operational amplifier U111 is respectively connected to the other end of the second resistor R2 and the other end of the first capacitor C1; the inverting input terminal of the second operational amplifier U111 is connected to one end of the third resistor R3, and the other end of the third resistor R3 is used for grounding.

[0044] In this embodiment, the output of the integrator U11 . is the magnetic flux of the memristor.

[0045] In this embodiment, the integrator is composed of an operational amplifier, a capacitor and a resistor, that is, the integrator is composed of simple single-element devices, and the generation of magnetic flux can be achieved through simple electronic components.

[0046] In an optional embodiment, the multiplier U2 is used to multiply the two magnetic fluxes to obtain the required second-order signal. The input of the multiplier U2 can be the output of the integrator U11, and the output of the multiplier U2 can be , is the coefficient of multiplier U2.

[0047] In an optional embodiment, if Figure 2 As shown, the inverting amplifier module U3 includes an inverting amplifier U31 and a function conversion circuit U32; the input end of the inverting amplifier U31 is connected to the output end of the integral operation module U1, and the output end is connected to the input end of the function conversion circuit U32.

[0048] In this embodiment, the inverting amplifier is used to invert and amplify the magnetic flux output by the integral operation module U1. The function conversion circuit U32 is used to perform function conversion on the inverted and amplified magnetic flux to obtain the required hyperbolic sine signal.

[0049] In this embodiment, by configuring the inverting amplifier module U3 to include an inverting amplifier and a function conversion circuit, the structure of the inverting amplifier module U3 can be simplified.

[0050] It should be noted that the present application only uses the example of first inverting and amplifying the magnetic flux and then performing function conversion on the inverted and amplified magnetic flux to obtain a hyperbolic sine function. In other embodiments, the magnetic flux may be first converted into a function to obtain a hyperbolic sine signal, and then the hyperbolic sine signal may be inverted and amplified.

[0051] In an optional embodiment, if Figure 5As shown, the inverting amplifier U31 includes a third operational amplifier U311, a fourth resistor R4, a fifth resistor R5 and a sixth resistor R6; the non-inverting input terminal of the third operational amplifier U311 is respectively connected to one end of the fourth resistor R4 and one end of the fifth resistor R5; the output terminal of the third operational amplifier U311 is connected to the other end of the fifth resistor R5; the inverting input terminal of the third operational amplifier U311 is connected to one end of the sixth resistor R6, and the other end of the sixth resistor R6 is used for grounding.

[0052] In this embodiment, the input of the inverting amplifier U31 can be the output of the integrator U11, and the output of the inverting amplifier U31 .

[0053] In this embodiment, the inverting amplifier U31 is composed of an operational amplifier and a resistor, which can simplify the structure of the inverting amplifier U31.

[0054] In some embodiments, the function conversion circuit U32 can be formed by existing electronic components, such as AD639.

[0055] In this embodiment, the input of the function conversion circuit U32 can be the output of the inverting amplifier U31, and the output of the function conversion circuit U32 can be ;in, are the coefficients of the function conversion circuit U32.

[0056] In this embodiment, mature electronic components can be used to generate the required hyperbolic sine signal.

[0057] In an optional embodiment, if Figure 2 As shown, the inverting addition operation module U4 includes an adder U41 and an inverting amplifier U42; the first input end of the adder U41 is connected to the output end of the inverting amplifier module U3, the second input end is connected to the output end of the multiplier U2, and the output end of the adder U41 is connected to the input end of the inverting amplifier U42.

[0058] In this embodiment, the adder U41 is used to implement addition operation, and is used to add the hyperbolic sine signal output by the inverting amplifier module U3 and the second-order signal output by the multiplier U2. The inverting amplifier U42 is used to invert and amplify the added hyperbolic sine signal and the second-order signal.

[0059] In this embodiment, by configuring the inverting addition module U4 to include an adder U41 and an inverting amplifier U42 , the structure of the inverting addition module U4 can be simplified.

[0060] In an optional embodiment, if Figure 6As shown, the adder U41 includes a fourth operational amplifier U411, a seventh resistor R7, an eighth resistor R8, a ninth resistor R9 and a tenth resistor R10; the in-phase input terminal of the fourth operational amplifier U411 is connected to one end of the seventh resistor R7, the eighth resistor R8 and the ninth resistor R9 respectively; the other end of the ninth resistor R9 is connected to the output terminal of the fourth operational amplifier U411; the inverting input terminal of the fourth operational amplifier U411 is connected to one end of the tenth resistor R10, and the other end of the tenth resistor R10 is used for grounding.

[0061] In this embodiment, the input of the adder U41 may be the output of the function conversion circuit U32 and the output of the multiplier U2 .

[0062] The output of adder U41 .

[0063] In this embodiment, the adder is composed of an operational amplifier and a resistor, which can simplify the structure of the adder.

[0064] In some embodiments, the structure of the inverting amplifier U42 is the same as that of the inverting amplifier U31, and the inverting amplifier U42 includes a third operational amplifier U311, a fourth resistor R4, a fifth resistor R5 and a sixth resistor R6; the in-phase input terminal of the third operational amplifier U311 is respectively connected to one end of the fourth resistor R4 and one end of the fifth resistor R5; the output terminal of the third operational amplifier U311 is connected to the other end of the fifth resistor R5; the inverting input terminal of the third operational amplifier U311 is connected to one end of the sixth resistor R6, and the other end of the sixth resistor R6 is used for grounding.

[0065] In this embodiment, the input of the inverting amplifier U42 can be the output of the adder U41, and the output of the inverting amplifier U42 can be .

[0066] In this embodiment, the inverting amplifier U42 is composed of an operational amplifier and resistors, which can simplify the structure of the inverting amplifier U42.

[0067] In some embodiments, the multiplier U5 is used to multiply the output signal of the inverting amplifier U42 and the output signal of the voltage follower U6 to obtain the final memristor current. The output of the multiplier U5 is .in, is the coefficient of multiplier U5.

[0068] In this embodiment, by comparing with formula (3), it can be seen that the memetic derivative , then the value in the theoretical formula , , .

[0069] In this embodiment, the magnetic flux-charge characteristic of the memristor is realized by using the circuit model, and specifically the voltage-current characteristic of the memristor is realized.

[0070] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the description of this application, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0071] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art who is familiar with the present technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

Claims

1. A hyperbolic function memristor equivalent circuit model, characterized in that: The equivalent circuit model of the hyperbolic memristor is designed based on the following mathematical relationship: ； ； ； in, and are the current and voltage of the memristor, and the variable is the magnetic flux of the memristor, is the charge of the memristor, is the memristor value, a, b, c are the coefficients of the equivalent circuit model; The hyperbolic function memristor equivalent circuit model includes: The integral operation module U1 is used to realize the integral operation of the input voltage and generate magnetic flux; The multiplier U2 is used to perform a multiplication operation on the magnetic flux to generate a required second-order signal; The inverting amplifier module U3 is used to perform inverting amplification and hyperbolic function operation on the magnetic flux to generate the required hyperbolic sine signal; The inverting addition module U4 is used to perform an addition operation and an inverting amplification operation on the second-order signal and the hyperbolic sine signal to obtain a required hyperbolic function signal; The multiplier U5 is used to multiply the input voltage and the hyperbolic function signal output by the inverting addition operation module U4 to obtain the memristor current.

2. The hyperbolic function memristor equivalent circuit model according to claim 1, characterized in that: Also includes: A voltage follower U6, wherein the input end of the voltage follower U6 is used to access the input voltage, and the output end is respectively connected to the input end of the integral operation module U1 and the first input end of the multiplier U5, so as to achieve isolation from the previous stage circuit connected to the hyperbolic function memristor equivalent circuit model.

3. The hyperbolic function memristor equivalent circuit model according to claim 2, characterized in that: The voltage follower U6 includes a first operational amplifier U61; the first operational amplifier U61 has a non-inverting input terminal for receiving the input voltage, and an inverting input terminal connected to an output terminal.

4. The hyperbolic function memristor equivalent circuit model according to claim 1, characterized in that: The integral operation module U1 includes an integrator U11; the input end of the integrator U11 is used to access the input voltage, and the output end is respectively connected to the first input end of the multiplier U2, the second input end of the multiplier U2 and the input end of the inverting amplifier module U3.

5. The hyperbolic function memristor equivalent circuit model according to claim 4, characterized in that: The integrator U11 includes a second operational amplifier U111, a first capacitor C1, a first resistor R1, a second resistor R2 and a third resistor R3; the non-inverting input terminal of the second operational amplifier U111 is respectively connected to one end of the first resistor R1, one end of the second resistor R2 and one end of the first capacitor C1; the output terminal of the second operational amplifier U111 is respectively connected to the other end of the second resistor R2 and the other end of the first capacitor C1; the inverting input terminal of the second operational amplifier U111 is connected to one end of the third resistor R3, and the other end of the third resistor R3 is used for grounding.

6. The hyperbolic function memristor equivalent circuit model according to claim 1, characterized in that: The inverting amplifier module U3 includes an inverting amplifier U31 and a function conversion circuit U32; the input end of the inverting amplifier U31 is connected to the output end of the integral operation module U1, and the output end is connected to the input end of the function conversion circuit U32.

7. The hyperbolic function memristor equivalent circuit model according to claim 6, characterized in that: The inverting amplifier U31 includes a third operational amplifier U311, a fourth resistor R4, a fifth resistor R5 and a sixth resistor R6; the non-inverting input terminal of the third operational amplifier U311 is respectively connected to one end of the fourth resistor R4 and one end of the fifth resistor R5; the output terminal of the third operational amplifier U311 is connected to the other end of the fifth resistor R5; the inverting input terminal of the third operational amplifier U311 is connected to one end of the sixth resistor R6, and the other end of the sixth resistor R6 is used for grounding.

8. The hyperbolic function memristor equivalent circuit model according to claim 1, characterized in that: The inverting addition operation module U4 includes an adder U41 and an inverting amplifier U42; the first input end of the adder U41 is connected to the output end of the inverting amplifier module U3, the second input end is connected to the output end of the multiplier U2, and the output end of the adder U41 is connected to the input end of the inverting amplifier U42.

9. The hyperbolic function memristor equivalent circuit model according to claim 8, characterized in that: The adder U41 includes a fourth operational amplifier U411, a seventh resistor R7, an eighth resistor R8, a ninth resistor R9 and a tenth resistor R10; the in-phase input terminal of the fourth operational amplifier U411 is connected to one end of the seventh resistor R7, the eighth resistor R8 and the ninth resistor R9 respectively; the other end of the ninth resistor R9 is connected to the output terminal of the fourth operational amplifier U411; the inverting input terminal of the fourth operational amplifier U411 is connected to one end of the tenth resistor R10, and the other end of the tenth resistor R10 is used for grounding.

10. The hyperbolic function memristor equivalent circuit model according to claim 1, characterized in that: The multiplier U2 is a two-quadrant multiplier or a four-quadrant multiplier.

11. The hyperbolic function memristor equivalent circuit model according to claim 1, characterized in that: The multiplier U5 is a two-quadrant multiplier or a four-quadrant multiplier.

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