Methods, apparatus and storage media for determining thin film parameters

Abstract

This invention provides a method for determining thin film parameters, a device for determining thin film parameters, and a computer-readable storage medium. The method for determining thin film parameters includes the following steps: acquiring multiple process parameters for a dehydrogenation treatment process. These multiple process parameters include at least treatment temperature, plasma power, and treatment time; and inputting each of the process parameters into a pre-established hydrogen content model to jointly determine the hydrogen distribution and total hydrogen content in the thin film via hydrogen atom activation diffusion units, hydrogen atom-defect interaction units, and hydrogen atom recombination and desorption units of the hydrogen content model. This invention can accurately determine the hydrogen distribution and total hydrogen content in a thin film by inputting multiple process parameters of the dehydrogenation treatment process into a pre-established hydrogen content model, and can provide theoretical guidance for optimizing the process parameters of the dehydrogenation treatment process.

Description

Technical Field

[0001] This invention relates to the field of semiconductor device fabrication, and more particularly to a method for determining thin film parameters, a device for determining thin film parameters, and a computer-readable storage medium. Background Technology

[0002] Hydrogen content significantly affects the thin film structure, dielectric constant, corrosion rate, stress, refractive index, moisture resistance, and scratch resistance of semiconductor thin film materials. In existing technologies, a dehydrogenation process (e.g., plasma treatment, UV post-treatment) is typically required to reduce the hydrogen content within the thin film and improve its tensile stress. Currently, methods for determining the hydrogen content in thin film materials after dehydrogenation treatment include experimental methods such as infrared transmission spectroscopy, nuclear reaction spectroscopy, particle scattering, and secondary ion mass spectrometry, used for preliminary estimations. However, these experimental methods still face challenges in terms of accuracy, repeatability, and irreversibility. Therefore, since there is no effective theoretical method for assessing the hydrogen content and distribution within thin film materials, it is impossible to accurately determine the hydrogen content and distribution. Consequently, it is currently impossible to use theoretical methods to guide the process parameters of the dehydrogenation treatment process to find the optimal combination of process parameters to improve the dehydrogenation effect.

[0003] In order to overcome the above-mentioned defects in the existing technology, there is an urgent need in the field for an improved method for determining thin film parameters, which can be used to accurately determine the hydrogen distribution and total amount of hydrogen in the thin film, and to provide theoretical guidance for optimizing the process parameters of the dehydrogenation process. Summary of the Invention

[0004] The following provides a brief overview of one or more aspects to offer a basic understanding of them. This overview is not an exhaustive summary of all conceived aspects, nor is it intended to identify key or decisive elements of all aspects, nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed descriptions that follow.

[0005] To overcome the aforementioned deficiencies in the prior art, this invention provides a method for determining thin film parameters, a device for determining thin film parameters, and a computer-readable storage medium. By inputting multiple process parameters of the dehydrogenation process into a pre-established hydrogen content model, the hydrogen distribution and total amount of hydrogen in the thin film can be accurately determined, and the method can provide theoretical guidance for optimizing the process parameters of the dehydrogenation process.

[0006] Specifically, the method for determining the above-mentioned thin film parameters according to the first aspect of the present invention includes the following steps: obtaining multiple process parameters of a dehydrogenation treatment process. The multiple process parameters include at least treatment temperature, plasma power, and treatment time; and inputting each of the process parameters into a pre-established hydrogen content model, so as to jointly determine the hydrogen distribution and total amount of hydrogen in the thin film via the hydrogen atom activation diffusion unit, the hydrogen atom-defect interaction unit, and the hydrogen atom recombination and desorption unit of the hydrogen content model.

[0007] Furthermore, in some embodiments of the present invention, the hydrogen atom activated diffusion unit is represented as:

[0008]

[0009] Among them, C H The density of hydrogen atoms present in interstitial form is given by denoted as ... C represents the inherent defect number density of hydrogen capture within the thin film. t C represents the density of unoccupied residual defects within the film. b E represents the vacancy defect density within the thin film. Hdtrap The defect's ability to trap the hydrogen atom. k b is Boltzmann's constant. T is the processing temperature.

[0010] Furthermore, in some embodiments of the present invention, the interaction unit between the hydrogen atom and the defect is represented as:

[0011]

[0012] Among them, C H The density of hydrogen atoms present in interstitial form is given by denoted as ... C represents the inherent defect number density of hydrogen capture within the thin film. t C represents the density of unoccupied residual defects within the film. b E represents the vacancy defect density within the thin film. Hdtrap The defect's ability to trap the hydrogen atom. k b is Boltzmann's constant. T is the processing temperature.

[0013] Furthermore, in some embodiments of the present invention, the hydrogen atom recombination and desorption unit is represented as:

[0014]

[0015] Among them, CH|O L0 is the density of hydrogen atoms within the surface layer of the thin film. L0 is the density per unit depth of the surface layer. D is the diffusion coefficient of hydrogen atoms within the thin film. C H K represents the bulk density of hydrogen atoms existing in interstitial form. H The release rate of the hydrogen atoms on the surface of the thin film is denoted as .

[0016] Furthermore, in some embodiments of the present invention, the release rate K at the surface of the thin film material is... H It is represented as:

[0017]

[0018] Among them, K r K represents the number of hydrogen atoms that recombine on the surface. c This represents the dissociation rate.

[0019] Furthermore, in some embodiments of the present invention, the step of determining the total amount of hydrogen within the thin film includes: determining the total amount N of hydrogen atoms captured by the defect during the processing time. tH :

[0020]

[0021] Among them, C tH The volume density of hydrogen atoms trapped by defects. t is the processing time; and the total amount of trapped hydrogen atoms N is... tH Determine the total hydrogen N in the thin film material. H :

[0022]

[0023] Among them, C H This represents the bulk density of hydrogen atoms existing in interstitial form.

[0024] Furthermore, in some embodiments of the present invention, the step of adjusting the process parameters according to the hydrogen distribution and the total hydrogen amount to determine the optimal parameter combination of the dehydrogenation process includes: determining one of the processing temperature, the processing time, and the plasma power as the process parameter to be tested, and determining the other two of the processing temperature, the processing time, and the plasma power as preset process parameters; and adjusting the process parameter to be tested within a preset parameter adjustment range to determine the optimal parameter combination of the dehydrogenation process.

[0025] Furthermore, in some embodiments of the present invention, the step of determining one of the processing temperature, the processing time, and the plasma power as the process parameter to be measured, and determining the other two of the processing temperature, the processing time, and the plasma power as preset process parameters, further includes: determining the processing temperature as the process parameter to be measured, and determining the processing time and the plasma power as preset process parameters; or determining the processing time as the process parameter to be measured, and determining the processing temperature and the plasma power as preset process parameters; or determining the plasma power as the process parameter to be measured, and determining the processing temperature and the processing time as preset process parameters.

[0026] Furthermore, the thin film parameter determination apparatus provided according to the second aspect of the present invention includes a memory and a processor. The memory stores computer instructions. The processor is connected to the memory and configured to execute the computer instructions stored thereon to implement the thin film parameter determination method as provided in the first aspect of the present invention.

[0027] Furthermore, the computer-readable storage medium provided according to the third aspect of the present invention stores computer instructions thereon, characterized in that, when the computer instructions are executed by a processor, the method for determining thin film parameters as provided in the first aspect of the present invention is implemented. Attached Figure Description

[0028] The above-described features and advantages of the present invention will be better understood after reading the following detailed description of embodiments of the present disclosure in conjunction with the accompanying drawings. In the drawings, components are not necessarily drawn to scale, and components having similar related characteristics or features may have the same or similar reference numerals.

[0029] Figure 1 A flowchart illustrating a method for determining thin film parameters according to some embodiments of the present invention is shown.

[0030] Figure 2 The graphs showing the hydrogen content as a function of depth under various processing temperature conditions provided by some embodiments of the present invention are shown.

[0031] Figure 3 A bar chart showing the relationship between total hydrogen content and time and temperature according to some embodiments of the present invention is shown. Detailed Implementation

[0032] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Although the description of the present invention is presented in conjunction with preferred embodiments, this does not mean that the features of the invention are limited to these embodiments. On the contrary, the purpose of describing the invention in conjunction with embodiments is to cover other options or modifications that may be derived based on the claims of the present invention. To provide a thorough understanding of the invention, many specific details will be included in the following description. The invention may also be implemented without using these details. Furthermore, to avoid confusion or obscuring the focus of the invention, some specific details will be omitted in the description.

[0033] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0034] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood as the orientations shown in the relevant paragraphs and accompanying drawings. These relative terms are for illustrative purposes only and do not imply that the described apparatus must be manufactured or operated in a specific orientation, and therefore should not be construed as limiting the invention.

[0035] It is understood that although terms such as "first," "second," and "third" may be used herein to describe various components, regions, layers, and / or parts, these components, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers, and / or parts. Therefore, the first components, regions, layers, and / or parts discussed below may be referred to as second components, regions, layers, and / or parts without departing from some embodiments of the present invention.

[0036] As mentioned above, current methods for determining the hydrogen content in thin film materials after dehydrogenation treatment mainly include experimental methods such as infrared transmission spectroscopy, nuclear spectroscopy reaction analysis, particle scattering, and secondary ion mass spectrometry, which are used to initially estimate the hydrogen content in the thin film material. However, these experimental methods still face challenges in terms of accuracy, repeatability, and irreversibility. Therefore, since there is no effective theoretical method for assessing the hydrogen content and distribution in thin film materials, it is impossible to accurately determine the hydrogen content and distribution within the thin film material. Consequently, it is currently impossible to use theoretical methods to guide the process parameters of the dehydrogenation treatment process to find the optimal combination of process parameters, thereby improving the dehydrogenation effect.

[0037] To overcome the aforementioned deficiencies in the prior art, this invention provides a method for determining thin film parameters, a device for determining thin film parameters, and a computer-readable storage medium. By inputting multiple process parameters of the dehydrogenation process into a pre-established hydrogen content model, the hydrogen distribution and total amount of hydrogen in the thin film can be accurately determined, and the method can provide theoretical guidance for optimizing the process parameters of the dehydrogenation process.

[0038] In some non-limiting embodiments, the method for determining the thin film parameters provided in the first aspect of the present invention can be implemented based on the apparatus for determining the thin film parameters provided in the second aspect of the present invention. Specifically, the apparatus for determining the thin film parameters is equipped with a memory and a processor. The memory includes, but is not limited to, the computer-readable storage medium provided in the third aspect of the present invention, on which computer instructions are stored. The processor is connected to the memory and configured to execute the computer instructions stored in the memory to implement the method for determining the thin film parameters provided in the first aspect of the present invention.

[0039] The working principle of the above-mentioned thin film parameter determination device will be described below with reference to some embodiments of methods for determining thin film parameters. Those skilled in the art will understand that these embodiments of methods for determining thin film parameters are merely non-limiting implementations provided by the present invention, intended to clearly demonstrate the main concept of the invention and provide some specific solutions convenient for public implementation, rather than limiting all functions or all operating methods of the thin film parameter determination device. Similarly, the thin film parameter determination device is also merely a non-limiting implementation of the present invention and does not constitute a limitation on the executing entity or execution order of the steps in these methods for determining thin film parameters.

[0040] Please refer to the reference for details. Figure 1 . Figure 1 A flowchart illustrating a method for determining thin film parameters according to some embodiments of the present invention is shown.

[0041] like Figure 1As shown, the processor can first acquire multiple process parameters for the dehydrogenation process. These multiple process parameters include at least the processing temperature, plasma power, and processing time.

[0042] The processor can then input various process parameters into a pre-established hydrogen content model, and through the hydrogen atom activation diffusion unit, hydrogen atom-defect interaction unit, and hydrogen atom recombination and desorption unit of the hydrogen content model, jointly determine the hydrogen distribution and total amount of hydrogen in the thin film.

[0043] Here, the hydrogen distribution is the vector of the volume density of hydrogen atoms in the film with respect to depth. The total amount of hydrogen is the integral of the volume density of hydrogen atoms in the film with respect to depth.

[0044] Specifically, the partial derivative of the bulk density of hydrogen atoms with respect to time, characterized by the aforementioned hydrogen atom activated diffusion unit, is expressed as:

[0045]

[0046] Among them, C H Let D be the volume density of hydrogen atoms existing in interstitial form, D be the diffusion coefficient of hydrogen atoms in the thin film, and a0 be the minimum unit cell size in the thin film. C represents the intrinsic defect number density for hydrogen capture within the thin film. t C represents the density of unoccupied residual defects within the thin film. b E represents the vacancy defect density within the thin film. Hdtrap For the ability of defects to trap hydrogen atoms, k b is Boltzmann's constant, and T is the processing temperature.

[0047] Furthermore, the partial derivative of the residual defect density of unoccupied hydrogen atoms with respect to time, representing the interaction unit between the aforementioned hydrogen atoms and defects, is expressed as:

[0048]

[0049] Among them, C H Let D be the volume density of hydrogen atoms existing in interstitial form, D be the diffusion coefficient of hydrogen atoms in the thin film, and a0 be the minimum unit cell size in the thin film. C represents the intrinsic defect number density for hydrogen capture within the thin film. t C represents the density of unoccupied residual defects within the thin film. b E represents the vacancy defect density within the thin film. Hdtrap For the ability of defects to trap hydrogen atoms, k b is Boltzmann's constant, and T is the processing temperature.

[0050] Furthermore, the partial derivative of the total hydrogen amount at the depth of the aforementioned hydrogen atom recombination and desorption units with respect to time is expressed as:

[0051]

[0052] Among them, C H|O L0 is the density of hydrogen atoms within the surface layer of the thin film. L0 is the unit depth of the surface layer, for example, the thickness of one atomic layer within the thin film. D is the diffusion coefficient of hydrogen atoms within the thin film. C H K represents the bulk density of hydrogen atoms existing in interstitial form. H The rate at which hydrogen atoms are released from the thin film surface is denoted as .

[0053] Furthermore, in some embodiments, the release rate K of hydrogen atoms on the film surface is... H It is represented as:

[0054]

[0055] Among them, K r K represents the number of hydrogen atoms recombinating on the surface. c This represents the dissociation rate.

[0056] Furthermore, in determining the total amount of hydrogen within the thin film using the aforementioned hydrogen content model, the processor can first integrate the volume density of hydrogen atoms trapped by defects with respect to depth to determine the total number N of hydrogen atoms trapped by defects during the processing time. tH :

[0057]

[0058] Among them, C tH t represents the volume density of hydrogen atoms trapped by defects, and t represents the processing time.

[0059] The processor can then integrate the volume density of hydrogen atoms existing in interstitial form with respect to depth, and calculate the total trapped amount N based on this. tH To determine the total hydrogen content (N) within the thin film material. H :

[0060]

[0061] Among them, C H This represents the bulk density of hydrogen atoms existing in interstitial form.

[0062] Please refer to the reference. Figure 2 and Figure 3 . Figure 2 The graphs showing the hydrogen content as a function of depth under various processing temperature conditions provided by some embodiments of the present invention are shown. Figure 3 A bar chart showing the relationship between total hydrogen content and time and temperature according to some embodiments of the present invention is shown.

[0063] Furthermore, in some preferred embodiments, after determining the hydrogen distribution and total hydrogen amount in the thin film, the processor can further determine one of the processing temperature, processing time, and plasma power as the process parameter to be tested, and the other two of the processing temperature, processing time, and plasma power as preset process parameters. Then, the processor can adjust the process parameter to be tested within the preset parameter adjustment range, and by observing the changing trends of the hydrogen distribution and total hydrogen amount obtained after inputting each process parameter to be tested, determine the impact of the process parameter to be tested on the dehydrogenation process, thereby determining the optimal parameter combination for the dehydrogenation process.

[0064] Furthermore, in Figure 2 and Figure 3 In the embodiment shown, the processor can determine the processing temperature as the process parameter to be measured, and the processing time and plasma power as preset process parameters.

[0065] Specifically, the simulated temperature range is 300K to 3000K. The processor can input the measured temperature values ​​within this simulated temperature range, along with the preset processing time and plasma power, into the aforementioned hydrogen content model to determine the hydrogen distribution and total amount of hydrogen in the thin film. Here, the hydrogen content model can comprehensively consider the various forms in which activated hydrogen atoms exist within the material, including interstitial hydrogen atoms and defect hydrogen clusters.

[0066] Then, the processor can determine the impact of the processing temperature, a process parameter, on the effectiveness of the dehydrogenation process based on the hydrogen distribution and total hydrogen amount obtained from each input temperature value. For example... Figure 3 As shown, hydrogen diffusion rates are low at low temperatures, leading to cluster formation. At higher temperatures, hydrogen tends to exist as individual interstitial hydrogen atoms and readily recombines into hydrogen molecules on the material surface before escaping. Therefore, based on these theoretical results, this invention can optimize the heat treatment process of thin film materials by increasing the dehydrogenation treatment temperature within a certain temperature range, thereby reducing hydrogen retention and improving material properties.

[0067] In addition, Figure 3 In the embodiment shown, the processor can determine the processing time as the process parameter to be measured, and the processing temperature and plasma power as preset process parameters.

[0068] Specifically, the simulation time range is 0s to 10000s. The processor can input the measured time values ​​in this simulation time range, as well as the preset processing temperature and plasma power, into the hydrogen content model to determine the hydrogen distribution and total amount of hydrogen in the thin film.

[0069] Then, the processor can determine the impact of the processing time, a process parameter, on the effectiveness of the dehydrogenation process based on the hydrogen distribution and total hydrogen amount obtained from each input time value. For example... Figure 3 As shown, hydrogen tends to become unevenly distributed in the material as the post-processing time increases. Longer post-processing times may lead to defect-captured hydrogen forming clusters, while the proportion of interstitial hydrogen atoms decreases. Therefore, based on the above theoretical results, this invention can appropriately shorten the processing time of the dehydrogenation process within a certain time range to optimize the dehydrogenation process strategy, thereby reducing hydrogen retention in the material and improving its stability.

[0070] In addition, in some embodiments, the processor can determine the plasma power as the process parameter to be measured, and the processing temperature and processing time as preset process parameters.

[0071] Specifically, the simulated plasma power ranges from 0W to 5kW. The processor can input the measured plasma power values ​​within this simulated plasma power range, along with the preset processing temperature and processing time, into the hydrogen content model to determine the hydrogen distribution and total amount of hydrogen in the thin film.

[0072] Subsequently, the processor can determine the impact of plasma power, a process parameter, on the dehydrogenation process based on the hydrogen distribution and total hydrogen amount obtained from the input plasma power values. Specifically, as plasma power increases, ion density and energy also increase, leading to increased hydrogen activation near the surface of the film. At this point, more hydrogen will exist as interstitial atoms, increasing the hydrogen diffusion rate near the material surface. Therefore, based on the above theoretical results, this invention can appropriately increase the plasma power of the dehydrogenation process within a certain range to optimize the dehydrogenation process strategy, thereby reducing hydrogen retention in the material and improving its stability.

[0073] In summary, the method, apparatus, and computer-readable storage medium for determining thin film parameters provided by this invention can accurately determine the hydrogen distribution and total amount of hydrogen in the thin film by inputting multiple process parameters of the dehydrogenation process into a pre-established hydrogen content model, and can be used to provide theoretical guidance for optimizing the process parameters of the dehydrogenation process.

[0074] Although the methods described above are illustrated and depicted as a series of actions for the sake of simplicity, it should be understood and appreciated that these methods are not limited by the order of the actions, as some actions may occur in a different order and / or concurrently with other actions from the illustrations and descriptions herein or not illustrated and described herein but which may be understood by those skilled in the art, according to one or more embodiments.

[0075] Those skilled in the art will understand that information, signals, and data can be represented using any of a variety of different techniques and arts. For example, the data, instructions, commands, information, signals, bits, symbols, and chips described throughout the above description can be represented by voltage, current, electromagnetic waves, magnetic fields or magnetic particles, light fields or optical particles, or any combination thereof.

[0076] Those skilled in the art will further appreciate that the various illustrative logic blocks, modules, circuits, and algorithm steps described in conjunction with the embodiments disclosed herein can be implemented as electronic hardware, computer software, or a combination of both. To clearly illustrate this interchangeability between hardware and software, the various illustrative components, blocks, modules, circuits, and steps are described above in a generalized manner in terms of their functionality. Whether such functionality is implemented as hardware or software depends on the specific application and the design constraints imposed on the overall system. Those skilled in the art may implement the described functionality in different ways for each specific application, but such implementation decisions should not be construed as departing from the scope of the invention.

[0077] The various illustrative logic modules and circuits described in conjunction with the embodiments disclosed herein may be implemented or performed using a general-purpose processor, a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA) or other programmable logic device, discrete gate or transistor logic, discrete hardware components, or any combination thereof designed to perform the functions described herein. The general-purpose processor may be a microprocessor, but in alternatives, it may be any conventional processor, controller, microcontroller, or state machine. The processor may also be implemented as a combination of computing devices, such as a combination of a DSP and a microprocessor, multiple microprocessors, one or more microprocessors cooperating with a DSP core, or any other such configuration.

[0078] The steps of the methods or algorithms described in conjunction with the embodiments disclosed herein may be embodied directly in hardware, in a software module executed by a processor, or in a combination of both. The software module may reside in RAM memory, flash memory, ROM memory, EPROM memory, EEPROM memory, registers, hard disk, removable disk, CD-ROM, or any other form of storage medium known in the art. An exemplary storage medium is coupled to a processor such that the processor can read and write information to / from the storage medium. In an alternative, the storage medium may be integrated into the processor. The processor and storage medium may reside in an ASIC. The ASIC may reside in a user terminal. In an alternative, the processor and storage medium may reside as discrete components in the user terminal.

[0079] In one or more exemplary embodiments, the described functionality may be implemented in hardware, software, firmware, or any combination thereof. If implemented in software as a computer program product, the functionality may be stored or transmitted as one or more instructions or code on or through a computer-readable medium. A computer-readable medium includes both computer storage media and communication media, encompassing any medium that facilitates the transfer of a computer program from one location to another. A storage medium may be any available medium accessible to a computer. By way of example and not limitation, such a computer-readable medium may include RAM, ROM, EEPROM, CD-ROM or other optical disc storage, disk storage or other magnetic storage devices, or any other medium that can be used to carry or store desired program code in the form of instructions or data structures and is accessible to a computer. Any connection is also legitimately referred to as a computer-readable medium. For example, if the software is transmitted from a website, server, or other remote source using coaxial cable, fiber optic cable, twisted pair, digital subscriber line (DSL), or wireless technologies such as infrared, radio, and microwave, then the coaxial cable, fiber optic cable, twisted pair, DSL, or wireless technologies such as infrared, radio, and microwave are included in the definition of a medium. As used in this article, disk and disc include compact discs (CDs), laser discs, optical discs, digital multi-purpose discs (DVDs), floppy disks, and Blu-ray discs. Disks typically reproduce data magnetically, while discs reproduce data optically using lasers. Combinations of these should also be included within the scope of computer-readable media.

[0080] The prior description of this disclosure is provided to enable any person skilled in the art to make or use this disclosure. Various modifications to this disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of this disclosure. Therefore, this disclosure is not intended to be limited to the examples and designs described herein, but should be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A method of determining parameters of a thin film, characterized by, The method comprises the following steps: acquiring a plurality of process parameters of a dehydrogenation treatment process, wherein the plurality of process parameters at least include a treatment temperature, a plasma power and a treatment time; and inputting each of the process parameters into a pre-established hydrogen content model to determine a hydrogen distribution and a total hydrogen amount in the thin film via a hydrogen atom activation diffusion unit, a hydrogen atom and defect interaction unit and a hydrogen atom recombination and desorption unit of the hydrogen content model, wherein the hydrogen atom activation diffusion unit is determined according to a bulk density of hydrogen atoms existing in interstitial form, a diffusion coefficient of the hydrogen atoms in the thin film, a minimum cell size in the thin film, a number density of intrinsic defects in the thin film that trap hydrogen, a remaining defect density in the thin film that is not occupied, a vacancy defect density in the thin film, a trapping ability of the defects for the hydrogen atoms and the treatment temperature, and represents a partial derivative of the bulk density of the hydrogen atoms with respect to time, the hydrogen atom and defect interaction unit is determined according to the bulk density of hydrogen atoms existing in interstitial form, the minimum cell size in the thin film, the number density of intrinsic defects in the thin film that trap hydrogen, the remaining defect density in the thin film that is not occupied, the vacancy defect density in the thin film, the trapping ability of the defects for the hydrogen atoms and the treatment temperature, and represents a partial derivative of the remaining defect density of the unoccupied hydrogen atoms with respect to time, the hydrogen atom recombination and desorption unit is determined according to a density of the hydrogen atoms in a surface layer of the thin film, a unit depth of the surface layer, the bulk density of hydrogen atoms existing in interstitial form and a release rate of the hydrogen atoms at the surface of the thin film, and represents a partial derivative of the total hydrogen amount of the unit depth with respect to time.

2. The determination method of claim 1, characterized in that, The hydrogen atom activation diffusion unit is represented as: wherein, D is the bulk density of hydrogen atoms in gap form, D is the diffusion coefficient of the hydrogen atoms within the thin film, D is the minimum cell size within the thin film, D is the intrinsic defect density within the thin film that traps hydrogen, D is the remaining defect density within the thin film that is not occupied, D is the vacancy defect density within the thin film, D is the trapping ability of the defects for the hydrogen atoms, D is the Boltzmann constant, D is the processing temperature.

3. The determination method of claim 1, wherein, The hydrogen atom and defect interaction unit is represented as: wherein, N is the bulk density of hydrogen atoms in gap form, D is the diffusion coefficient of the hydrogen atoms within the thin film, a is the minimum cell size within the thin film, N is the number density of intrinsic defects within the thin film that trap hydrogen, N is the residual defect density within the thin film that is not occupied, N is the vacancy defect density within the thin film, K is the trapping ability of the defects for the hydrogen atoms, B is the Boltzmann constant, T is the processing temperature.

4. The determination method of claim 1, wherein, The hydrogen atom recombination and desorption unit is represented as: wherein, is the density of the hydrogen atoms in the surface layer of the thin film, is the unit depth of the surface layer, is the diffusion coefficient of the hydrogen atoms in the thin film, is the bulk density of the hydrogen atoms present in interstitial form, is the release rate of the hydrogen atoms from the surface of the thin film.

5. The determination method of claim 4, wherein, The release rate from the surface of the film material is represented as: wherein, is the number of hydrogen atoms between the surface complexes, is the dissociation rate.

6. The determination method of claim 1, wherein, The step of determining the total hydrogen amount in the thin film comprises: determining a total amount of capture of the hydrogen atoms by the defects within the processing time : wherein the bulk density of hydrogen atoms being trapped by defects, is the treatment time; and According to the total amount captured , the total amount of hydrogen within the thin film material is determined : wherein, the bulk density of hydrogen atoms present as interstitials.

7. The determination method of claim 1, wherein, The step of adjusting the process parameters according to the hydrogen distribution and the total hydrogen amount to determine an optimal parameter combination of the dehydrogenation treatment process comprises: determining one of the treatment temperature, the treatment time and the plasma power as a to-be-tested process parameter, and determining the other two of the treatment temperature, the treatment time and the plasma power as preset process parameters; and adjusting the to-be-tested process parameter within a preset parameter adjustment range to determine the optimal parameter combination of the dehydrogenation treatment process.

8. The determination method of claim 7, wherein, The step of determining one of the treatment temperature, the treatment time and the plasma power as a to-be-tested process parameter, and determining the other two of the treatment temperature, the treatment time and the plasma power as preset process parameters further comprises: determining the treatment temperature as the to-be-tested process parameter, and determining the treatment time and the plasma power as the preset process parameters; or determining the treatment time as the to-be-tested process parameter, and determining the treatment temperature and the plasma power as the preset process parameters; or determining the plasma power as the to-be-tested process parameter, and determining the treatment temperature and the treatment time as the preset process parameters.

9. An apparatus for determining parameters of a thin film, characterized by The method comprises: a memory having computer instructions stored thereon; and a processor connected to the memory and configured to execute the computer instructions stored thereon to implement the method of determining thin film parameters according to any one of claims 1-8.

10. A computer readable storage medium having stored thereon computer instructions, wherein, The computer instructions, when executed by the processor, implement the method of determining thin film parameters according to any one of claims 1-8.

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