Single-processing gas supply line architecture

Abstract

An exemplary semiconductor processing system may include a cap plate. A gas splitter may be disposed on the cover plate. The gas splitter may include a top surface and a plurality of side surfaces. The gas splitter may define a gas inlet, one or more gas outlets, and one or more gas lumens. One or more gas lumens may extend between the gas inlet and each of the one or more gas outlets and fluidly couple the gas inlet with each of the one or more gas outlets. A primary gas weldment may extend to and be fluidly coupled to the gas inlet. The gas panel may include a first fluid source and a second fluid source, each fluidly coupled with the primary gas weldment. One or more auxiliary gas weldments may extend between each of the one or more gas outlets and a respective one of the plurality of processing chambers and fluidly couple each of the one or more gas outlets with the respective one of the plurality of processing chambers.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of and priority to U.S. Patent Application No. 17 / 880,310, filed on August 3, 2022, entitled “SINGLE PROCESS GAS FEED LINE ARCHITECTURE,” the entire contents of which are incorporated herein by reference. Technical Field

[0002] The present technology relates to semiconductor processing and equipment. More particularly, the present technology relates to semiconductor processing systems and components. Background Art

[0003] Semiconductor processing systems often utilize cluster tools to integrate multiple processing chambers together. This configuration can facilitate the performance of several sequential processing operations without removing the substrate from a controlled processing environment, or can allow similar processes to be performed on multiple substrates simultaneously in varying chambers. These chambers may include, for example, degassing chambers, pre-processing chambers, transfer chambers, chemical vapor deposition chambers, physical vapor deposition chambers, etching chambers, metrology chambers, and other chambers. The combination of chambers in a cluster tool, as well as the operating conditions and parameters under which these chambers are run, are selected to fabricate specific structures using specific process recipes and process flows.

[0004] Typically, a processing system includes a gas distribution system that can mix and / or otherwise deliver multiple processing gases to various chambers. The temperature and flow of these gases may need to be carefully controlled to try to achieve the desired deposition rate, ensuring that the gases flow evenly into each of the processing chambers.

[0005] Therefore, there is a need for improved systems and methods that can be used to efficiently mix gases and / or otherwise deliver gases to a processing chamber under desired conditions. The present technology addresses these and other needs. Summary of the invention

[0006] An exemplary semiconductor processing system may include a plurality of processing chambers. Each processing chamber may define a processing region. The semiconductor processing system may include a cover plate positioned above the plurality of processing chambers. The semiconductor processing system may include a gas flow divider disposed on the cover plate. The gas flow divider may include a top surface and a plurality of side surfaces. The gas flow divider may define a single gas inlet, one or more gas outlets, and one or more gas lumens. The one or more gas lumens may extend between the gas inlet and each of the one or more gas outlets and fluidly couple the gas inlet to each of the one or more gas outlets. A main gas weld may extend to the gas inlet and fluidly couple to the gas inlet. The main gas weld may deliver a process gas mixture to the plurality of processing chambers. At least one gas mixing valve may include a first valve inlet, a second valve inlet, and a valve outlet. The valve outlet may be coupled to an inlet end of the main gas weld. One or more auxiliary gas welds may extend between each of the one or more gas outlets and a corresponding one of the plurality of processing chambers and fluidly couple each of the one or more gas outlets to a corresponding one of the plurality of processing chambers.

[0007] In some embodiments, a system may include a gas panel including a first gas source fluidly coupled to a first valve inlet and a second gas source fluidly coupled to a second valve inlet. The system may include a gas heater disposed upstream of at least one mixing valve. The gas heater may be operable to preheat at least one of the process gas mixtures. The system may include a steering weldment fluidly connected to a main gas weldment near the gas panel. The system may include one or more orifices disposed between one or more gas outlets and a plurality of process chambers. The inner diameter of the one or more orifices may be smaller than the inner diameter of a fluid line disposed upstream and downstream relative to each of the one or more orifices. The system may include between one and six heater jackets surrounding the main gas weldment. The system may include a plurality of output manifolds located on a cover plate. Each of the one or more auxiliary gas weldments may be fluidly coupled to a corresponding one of the plurality of output manifolds.

[0008] Some embodiments of the present technology may encompass a semiconductor processing system that may include a cover plate. The system may include a gas flow divider mounted on the cover plate. The gas flow divider may include a top surface and a plurality of side surfaces. The gas flow divider may define a gas inlet. The gas flow divider may define one or more gas outlets. The gas flow divider may define one or more gas lumens extending between the gas inlet and each of the one or more gas outlets and fluidly coupling the gas inlet to each of the one or more gas outlets. The system may include a main gas weld extending to the gas inlet and fluidly coupled to the gas inlet. The main gas weld may deliver a process gas mixture to a plurality of process chambers. The system may include a gas panel including a first fluid source and a second fluid source, each of the first fluid source and the second fluid source being fluidly coupled to the main gas weld. The system may include one or more auxiliary gas welds extending between each of the one or more gas outlets and a corresponding one of the plurality of process chambers and fluidly coupling each of the one or more gas outlets to a corresponding one of the plurality of process chambers.

[0009] In some embodiments, the system may include a gas heater in fluid communication with the main gas weld. The gas heater is operable to preheat at least one of the process gas mixtures. The system may include a diverter weld in fluid communication with the main gas weld near the gas panel. The system may include one or more orifices between one or more gas outlets and a plurality of process chambers. The inner diameter of the one or more orifices may be smaller than the inner diameter of the fluid line disposed upstream and downstream relative to each of the one or more orifices. The one or more orifices may be removable so that the inner diameter of the one or more orifices may be changed. Each of the one or more orifices may have an inner diameter between about 1.70 mm and about 2.40 mm. The system may include between one and six heater sheaths surrounding the main gas weld. The system may include at least one gas mixing valve having a first valve inlet, a second valve inlet, and a valve outlet. The first valve inlet may be in fluid communication with the gas heater, which is operable to heat the gas before the gas is transferred to the first valve inlet. The valve outlet may be coupled to the inlet end of the main gas weld.

[0010] Some embodiments of the present invention may encompass semiconductor processing methods. The method may include introducing a process gas mixture into a main gas weld. The process gas mixture may include at least two process gases. The method may include flowing the process gas mixture into a gas splitter via a gas inlet. The method may include splitting the process gas mixture flow into a plurality of gas lumens defined by the gas splitter. The method may include flowing portions of the process gas mixture into respective process chambers via a plurality of auxiliary gas welds coupled to a gas outlet end of each of the plurality of gas lumens.

[0011] In some embodiments, the method may include heating at least one of the process gas mixtures before introducing the process gas mixture into the main gas weld. The method may include directing a diverted portion of the process gas mixture into the divert weld. The method may include flowing the diverted portion of the process gas mixture through the divert weld and into the divert foreline. The method may include combining at least a first process gas and a second process gas to form a process gas mixture. The first process gas may include 2 , and the second process gas includes TEOS. The method may include adding O 2 Heat O before combining with TEOS e .

[0012] Such techniques may provide numerous benefits over conventional systems and techniques. For example, a processing system may provide multi-substrate processing capabilities that may far exceed conventional designs. In addition, a processing system may provide equal flow splitting between multiple chambers while preventing cross-talk between chambers. A processing system may use a passive flow control device to regulate flow to multiple chambers, and may reduce power consumption. These and other embodiments (along with their many advantages and features) will be described in more detail in conjunction with the following description and accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] A further understanding of the nature and advantages of the disclosed technology may be realized by reference to the remainder of the specification and the accompanying drawings.

[0014] Figure 1 A schematic top view of an exemplary processing system in accordance with some embodiments of the present technology is shown.

[0015] Figure 2 A schematic isometric view of a transfer area of ​​an exemplary chamber system according to some embodiments of the present technology is shown.

[0016] Figure 3 A schematic isometric view of a transfer area of ​​an exemplary chamber system according to some embodiments of the present technology is shown.

[0017] Figure 4 A schematic isometric view of a transfer area of ​​an exemplary chamber system according to some embodiments of the present technology is shown.

[0018] Figure 5 A schematic partial isometric view of a chamber system according to some embodiments of the present technology is shown.

[0019] Figure 6 A schematic isometric view of an exemplary processing system in accordance with some embodiments of the present technology is shown.

[0020] Figure 7 A schematic cross-sectional top view of an exemplary gas splitter in accordance with some embodiments of the present technology is shown.

[0021] Fig. 8A Some embodiments of the present technology are shown. Figure 7 A partial schematic isometric view of a gas splitter coupled to a spoiler.

[0022] Figure 8B Some embodiments of the present technology are shown. Figure 7 A partial schematic top view of a gas splitter coupled to a baffle.

[0023] Fig. 9 A partial schematic isometric view of a gas panel is shown in accordance with some embodiments of the present technology.

[0024] Fig.10 Operations of an exemplary semiconductor processing method according to some embodiments of the present technology are shown.

[0025] Several of the drawings are included as schematic diagrams. It should be understood that these drawings are for illustrative purposes and should not be considered to scale or proportion unless specifically stated to be to scale or proportion. Furthermore, as schematic diagrams, these drawings are provided to aid understanding and may not include all aspects or information compared to realistic representations and may include exaggerated material for illustrative purposes.

[0026] In the drawings, similar components and / or features may have the same reference numerals. In addition, various components of the same type may be distinguished by appending a letter after the reference numeral that distinguishes the similar components. If only the first reference numeral is used in the specification, the description applies to any of the similar components having the same first reference numeral, regardless of the letter. DETAILED DESCRIPTION

[0027] Substrate processing may include time-intensive operations for adding, removing, or otherwise modifying materials on a wafer or semiconductor substrate. Efficient movement of substrates can reduce queue time and increase substrate throughput. In order to increase the number of substrates processed within a cluster tool, additional chambers can be incorporated into the host. Although transfer robots and processing chambers can be continuously added by lengthening the tool, this may become space inefficient as the footprint of the cluster tool expands. Therefore, the present technology may include a cluster tool with an increased number of processing chambers within a limited footprint. In order to accommodate the limited footprint of the transfer robot, the present technology may increase the number of processing chambers laterally outward from the robot. For example, some conventional cluster tools may include one or two processing chambers that are positioned around various parts of a centrally located transfer robot to maximize the number of chambers radially surrounding the robot. The present technology can extend the concept by incorporating additional chambers laterally outward as another row or another group of chambers. For example, the present technology may be applied to a cluster tool that includes three, four, five, six or more processing chambers that can be accessed at each of one or more robot access locations.

[0028] However, when additional processing positions are added, processing rates (such as deposition or etching rates) may be reduced because the rates of reagents and / or precursors provided to the processing system can be split between the additional processing chambers. In order to ensure that the gas flow to each chamber is uniform, conventional chambers can utilize gas splitters including valves, mass flow controllers, and / or other active flow control devices to adjust the gas flow to each chamber. However, these active flow control devices may introduce other complexities to the processing system. For example, timing differences between the actuation of different active flow control devices may introduce non-uniformity between chambers. In addition, the active flow control devices and heating elements may require a large amount of power to operate the processing system.

[0029] The present technology can overcome these problems by providing a single process gas pipeline to the gas splitter. For example, an embodiment may include one or more valves that mix multiple process gases from a gas panel before the gas reaches the gas splitter. In addition, by delivering the process gas to the gas splitter via a single gas pipeline, the processing system can carefully adjust the gas flow to each processing chamber using a passive flow control device. Passive flow control devices can be used to reduce any mismatch between the flow rate / volume between the processing chambers without using active flow control devices. By eliminating the need for valves and other active flow control devices, embodiments can reduce the power consumption of the processing system and can also eliminate problems associated with such devices, such as pressure spikes and timing mismatches. The processing system may include a heater that actively heats one or more process gases to provide better temperature control, as well as reducing the number of heating elements in the system. The heater can be positioned adjacent to or near the outlet of the gas panel. This can in turn reduce the power consumption of the processing system.

[0030] Although the remaining disclosure will routinely identify specific structures (such as a four-position chamber system) with which the present structures and methods may be employed, it will be readily appreciated that these systems and methods are equally applicable to any number of structures and devices that may benefit from the capabilities of the explained structures. Therefore, the described technology should not be considered limited to use with any specific structure. In addition, while an exemplary tool system will be described to provide a basis for the present technology, it should be understood that the present technology can be combined with any number of semiconductor processing chambers and tools that can benefit from some or all of the operations and systems to be described.

[0031] Figure 1A top view of one embodiment of a substrate processing tool or processing system 100 of deposition, etching, baking and curing chambers according to some embodiments of the present technology is shown. In the figure, a set of front-opening unified pods 102 supply substrates of various sizes, which are received by robots 104a and 104b within a factory interface 103 and placed into a load lock or low pressure holding area 106 before being transported to a semiconductor processing area 108 (positioned in one of the chamber system or quad sections 109a-109c), where each of the quad sections 109a-109c can be a substrate processing system with a transfer area fluidly coupled to multiple processing areas 108. Although a quad system is illustrated, it should be understood that the present technology also includes platforms incorporating independent chambers, dual chambers, and other multi-chamber systems. A second robot 110 housed in a transfer chamber 112 can be used to transfer substrate wafers from the holding area 106 to the quadruplet 109 and back, and the second robot 110 can be housed in the transfer chamber, wherein each quadruplet or processing system can be connected to the transfer chamber. Each semiconductor processing area 108 can be equipped to perform a plurality of substrate processing operations, including any number of deposition processes, including cyclic layer deposition, atomic layer deposition, chemical vapor deposition, physical vapor deposition, as well as etching, pre-cleaning, annealing, plasma treatment, degassing, orientation and other substrate processing.

[0032] Each quadruple section 109 may include a transfer area that can receive a substrate from a second robot 110 and deliver the substrate to the second robot 110. The transfer area of ​​the chamber system may be aligned with a transfer chamber having a second robot 110. In some embodiments, the transfer area may be accessible to the robot laterally. In subsequent operations, components of the transfer section may vertically transfer the substrate to an overlying processing area 108. Similarly, the transfer area may also be operable to rotate the substrate between positions within each transfer area. The semiconductor processing area 108 may include any number of system components for depositing, annealing, curing and / or etching a material film on a substrate or wafer. In one configuration, two groups of processing areas (such as the processing areas in quadruple sections 109a and 109b) may be used to deposit materials on a substrate, while a third group of processing chambers (such as the processing chambers or areas in quadruple section 109c) may be used to cure, anneal or process deposited films. In another configuration, all three groups of chambers (such as all twelve chambers shown) may be configured to deposit and / or cure films on a substrate.

[0033] As shown, the second robot 110 may include two arms for simultaneously transferring and / or retrieving multiple substrates. For example, each quadruple portion 109 may include two inlets and outlets 107 along the surface of the housing of the transfer area, which may be aligned laterally with the second robot. The inlet and outlet may be defined along the surface adjacent to the transfer chamber 112. In some embodiments, such as shown, the first inlet and outlet may be aligned with the first substrate support of the multiple substrate supports of the quadruple portion. In addition, the second inlet and outlet may be aligned with the second substrate support of the multiple substrate supports of the quadruple portion. In some embodiments, the first substrate support may be adjacent to the second substrate support, and the two substrate supports may define the first row of substrate supports. As shown in the illustrated configuration, the second row of substrate supports may be positioned behind the first row of substrate supports laterally outward from the transfer chamber 112. The two arms of the second robot 110 may be spaced apart to allow the two arms to simultaneously enter the quadruple portion or chamber system to transport one or two substrates to the substrate support in the transfer area, or to retrieve one or two substrates from the substrate support in the transfer area.

[0034] Any one or more transfer regions described may be combined with additional chambers that are separate from the manufacturing systems shown in the different embodiments. It should be understood that the processing system 100 contemplates additional configurations for deposition, etching, annealing, and curing chambers for material films. In addition, any number of other processing systems may be used with the present technology, which may be combined with a transfer system for performing any specific operation (such as substrate movement). In some embodiments, a processing system that can provide access to multiple processing chamber areas while maintaining a vacuum environment in various portions (such as the mentioned holding and transfer regions) can allow operations to be performed in multiple chambers while maintaining a specific vacuum environment between discrete areas.

[0035] As noted, the processing system 100 (or more specifically, a quadruple section or chamber system in conjunction with the processing system 100 or other processing systems) can include a transfer section located below the illustrated processing chamber area. Figure 2 A schematic isometric view of a transfer portion of an exemplary chamber system 200 is shown in accordance with some embodiments of the present technology. Figure 2 Additional aspects or variations of the transfer regions described above may be illustrated, and may include any of the components or features described. The illustrated system may include a transfer region housing 205, which may be a chamber body as discussed further below, defining a transfer region in which a plurality of components may be included. The transfer region may additionally be at least partially defined from above by a process chamber or a process region fluidly coupled to the transfer region, such as Figure 1109 of the transfer area housing. The sidewalls of the transfer area housing can define one or more access locations 207 through which substrates can be transported and retrieved, such as by the second robotic arm 110 as described above. In some embodiments, the access location 207 can be a slit valve or other sealable access location that includes a door or other sealing mechanism to provide a sealed environment within the transfer area housing 205. Although two such access locations 207 are shown, it should be understood that in some embodiments only a single access location 207 may be included, as well as access locations on multiple sides of the transfer area housing. It should also be understood that the dimensions of the transfer portion shown can be sized to accommodate any substrate size, including 200 mm, 300 mm, 450 mm, or larger or smaller substrates, including substrates characterized by any number of geometries or shapes.

[0036] Within the transfer area housing 205 may be a plurality of substrate supports 210 positioned around the transfer area volume. Although four substrate supports are illustrated, it should be understood that embodiments of the present technology similarly encompass any number of substrate supports. For example, according to embodiments of the present technology, more than or about three, four, five, six, eight or more substrate supports 210 may be accommodated in the transfer area. The second robot 110 may transport the substrate to either or both of the substrate supports 210a or 210b through the access position 207. Similarly, the second robot 110 may retrieve the substrate from these positions. Lifting rods 212 may protrude from the substrate support 210 and may allow a robot to access the substrate below. In some embodiments, the lifting rods may be fixed to the substrate support, or fixed to a position where the substrate support may be recessed below, or the lifting rods may be additionally raised or lowered by the substrate support. The substrate support 210 may be vertically translatable and may extend to a processing chamber area of ​​the substrate processing system, such as the processing chamber area 108, which is positioned above the transfer area housing 205 in some embodiments.

[0037] The transfer area housing 205 may provide an access port 215 for an alignment system, which may include an aligner that may extend through a hole in the transfer area housing as shown and may operate in conjunction with a laser, camera, or other monitoring device that protrudes or transmits through an adjacent hole, which may determine whether the substrate being transferred is properly aligned. The transfer area housing 205 may also include a transfer device 220 that may operate in a variety of ways to position substrates and move substrates between various substrate supports. In one example, the transfer device 220 may move substrates on substrate supports 210a and 210b to substrate supports 210c and 210d, which may allow additional substrates to be delivered to the transfer chamber. Additional transfer operations may include rotating the substrate between substrate supports for additional processing in an overlying processing area.

[0038] The transfer device 220 may include a central hub 225, which may include one or more shafts extending into the transfer chamber. Coupled to the shaft may be a terminal effector 235. The terminal effector 235 may include a plurality of arms 237 extending radially or laterally outward from the central hub. Although the terminal effector is shown with a central body from which the arms extend, the terminal effector may additionally include separate arms, which in various embodiments are coupled to the shaft or central hub. Any number of arms may be included in embodiments of the present technology. In some embodiments, the number of arms 237 may be similar to or equal to the number of substrate supports 210 included in the chamber. Thus, as shown, for four substrate supports, the transfer device 220 may include four arms extending from the terminal effector. The arms may be characterized by any number of shapes and profiles (such as a straight profile or an arcuate profile), and include any number of remote profiles, including hooks, loops, forks, or other designs for supporting substrates and / or providing access (such as for alignment or engagement) to substrates.

[0039] The end effector 235 or components or portions of the end effector can be used to contact the substrate during transfer or movement. These components and the end effector can be made of or include a variety of materials, including conductive and / or insulating materials. In some embodiments, the material can be coated or plated to withstand contact with precursors or other chemicals that may enter the transfer chamber from an overlying processing chamber.

[0040] In addition, materials may be provided or selected to withstand other environmental characteristics, such as temperature. In some embodiments, a substrate support may be used to heat a substrate disposed on the support. The substrate support may be configured to increase the surface or substrate temperature to a temperature greater than or about 100°C, greater than or about 200°C, greater than or about 300°C, greater than or about 400°C, greater than or about 500°C, greater than or about 600°C, greater than or about 700°C, greater than or about 800°C, or higher. Any of these temperatures may be maintained during operation, and thus the components of the transfer device 220 may be exposed to any of these specified or included temperatures. Therefore, in some embodiments, any material may be selected to accommodate these temperature ranges, and may include materials such as ceramics and metals, characterized by relatively low coefficients of thermal expansion or other beneficial properties.

[0041] The component coupler may also be adapted for operation in high temperature and / or corrosive environments. For example, where both the terminal effector and the end portion are ceramic, the coupler may include a press fit, a snap fit, or other fit that may not include additional materials (such as bolts) that may expand and contract with temperature and may cause cracking in the ceramic. In some embodiments, the end portion may be continuous with the terminal effector and may be integrally formed with the terminal effector. Any number of other materials that may facilitate operation or resistance during operation may be used and are similarly covered by the present technology. The transfer device 220 may include multiple components and configurations that may facilitate movement of the terminal effector in multiple directions, which may facilitate rotational movement, as well as vertical movement, or lateral movement of the drive system component in one or more ways, wherein the terminal effector may be coupled to the drive system component.

[0042] Figure 3 A schematic isometric view of a transfer region of a chamber system 300 of an exemplary chamber system according to some embodiments of the present technology is shown. The chamber system 300 can be similar to the transfer region of the chamber system 200 described above and can include similar components, including any of the components, features, or configurations described above. Figure 3 You can also use the following Figure 1 The following illustrates some of the component couplers covered by the present technology.

[0043] The chamber system 300 may include a chamber body 305 or a housing defining a transfer region. Within the defined volume may be a plurality of substrate supports 310, which are distributed around the chamber body as previously described. As will be further described below, each substrate support 310 may be vertically translated along the central axis of the substrate support, between a first position shown in the figure and a second position where substrate processing may be performed. The chamber body 305 may also define one or more inlets and outlets 307 through the chamber body. A transfer device 335 may be positioned within the transfer region and configured to engage and rotate a substrate between the substrate supports 310 within the transfer region, as previously described. For example, the transfer device 335 may be rotated about the central axis of the transfer device to reposition the substrate. In some embodiments, the transfer device 335 may also be laterally translated to further facilitate repositioning the substrate at each substrate support.

[0044] The chamber body 305 may include a top surface 306 that may provide support for the overlying components of the system. The top surface 306 may define a gasket groove 308 that may provide a base for the gasket to provide an airtight seal for the overlying components for vacuum processing. Unlike some conventional systems, the chamber system 300 and other chamber systems according to some embodiments of the present technology may include an open transfer region within the processing chamber, and the processing region may be formed as an overlying transfer region. Since the transfer device 335 produces a sweeping area, a support or structure for separating the processing region may not be available. Therefore, the present technology may utilize an overlying cover structure to form an isolated processing region covering the open transfer region, as will be described below. Therefore, in some embodiments, the seal between the chamber body and the overlying components may only occur around the outer chamber body wall defining the transfer region, and in some embodiments, there may be no internal coupling. The chamber body 305 may also define a hole 315 that may facilitate exhaust flow from the processing region of the overlying structure. The top surface 306 of the chamber body 305 may also define one or more gasket grooves around the aperture 315 for sealing with an overlying component. Additionally, in some embodiments, the aperture may provide a locating feature that may facilitate stacking of components.

[0045] Figure 4 A schematic isometric view of an overlying structure of a chamber system 300 according to some embodiments of the present technology is shown. For example, in some embodiments, a first cover plate 405 can be located on the chamber body 305. The first cover plate 405 is characterized by a first surface 407 and a second surface 409 opposite the first surface. The first surface 407 of the first cover plate 405 can contact the chamber body 305 and can define a mating groove to cooperate with the above-mentioned groove 308 to create a gasket channel between the components. The first cover plate 405 can also define a hole 410, which can provide separation of overlapping areas of the transfer chamber to form a processing area for substrate processing.

[0046] A hole 410 may be defined through the first cover plate 405 and may be at least partially aligned with a substrate support in the transfer region. In some embodiments, the number of holes 410 may be equal to the number of substrate supports in the transfer region, and each hole 410 may be axially aligned with a substrate support in the plurality of substrate supports. As will be further described below, when vertically raised to a second position within the chamber system, the processing region may be at least partially defined by the substrate support. The substrate support may extend through the hole 410 of the first cover plate 405. Therefore, in some embodiments, the hole 410 of the first cover plate 405 is characterized by a diameter greater than the diameter of the associated substrate support. Depending on the amount of clearance, the diameter can be less than the diameter of the substrate support or about 25% more than the diameter of the substrate support, and in some embodiments can be less than or about 20% less than or about 15%, less than or about 10%, less than or about 9%, less than or about 8%, less than or about 7%, less than or about 6%, less than or about 5%, less than or about 4%, less than or about 3%, less than or about 2%, less than or about 1%, or less than the diameter of the substrate support, which can provide a minimum clearance between the substrate support and the hole 410.

[0047] The first cover plate 405 may also include a second surface 409 opposite the first surface 407. The second surface 409 may define an inner recessed lip 415 that may create an annular inner recessed shelf through the second surface 409 of the first cover plate 405. In some embodiments, the inner recessed lip 415 may be defined around each of the plurality of holes 410. As will be further described below, the inner recessed shelf may provide support for the cover stack component. In addition, the first cover plate 405 may define a second hole 420 that may at least partially define a pumping channel from an overlying component described below. The second hole 420 may be axially aligned with the hole 315 of the chamber body 305 previously described.

[0048] Figure 5 A schematic partial isometric view of a chamber system 300 according to some embodiments of the present technology is shown. The figure can show a partial cross-section through two processing areas and a portion of a transfer area of ​​the chamber system. For example, the chamber system 300 can be a quadruple portion of the previously described processing system 100, and can include any of the previously described components or any components of the system.

[0049] As shown, the chamber system 300 may include a chamber body 305 defining a transfer region 502 including a substrate support 310 that may extend into the chamber body 305 and may translate vertically as previously described. A first cover plate 405 may be located above the chamber body 305 and may define holes 410 that create access to a processing region 504 to be formed with additional chamber system components. A cover stack 505 may be located around or at least partially within each hole, and the chamber system 300 may include a plurality of cover stacks 505, including a number of cover stacks equal to the number of holes 410 in the plurality of holes. Each cover stack 505 may be seated on the first cover plate 405 and may be seated on a shelf created by an indented flange through a second surface of the first cover plate. The cover stack 505 may at least partially define a processing region 504 of the chamber system 300.

[0050] As shown, the processing area 504 can be vertically offset from the transfer area 502, but can be fluidly coupled to the transfer area. In addition, the processing area can be separated from other processing areas. Although the processing area can be fluidly coupled to other processing areas from below through the transfer area, the processing area can be isolated from each of the other processing areas from above. In some embodiments, each cover stack 505 can also be aligned with the substrate support. For example, as shown, the cover stack 505a can be aligned above the substrate support 310a, and the cover stack 505b can be aligned above the substrate support 310b. When raised to an operating position (such as the second position), the substrate can be transported in a separate processing area for a separate substrate to be processed. When in the position, as will be further described below, each processing area 504 can be at least partially defined from below by the associated substrate support located in the second position.

[0051] Figure 5An embodiment is also shown in which a second cover plate 510 may be included for the chamber system. In some embodiments, the second cover plate 510 may be coupled to each cover stack, which may be located between the first cover plate 405 and the second cover plate 510. As will be explained below, the second cover plate 510 may facilitate access to components of the cover stack 505. The second cover plate 510 may define a plurality of holes 512 passing through the second cover plate. Each hole in the plurality of holes may be defined as providing a fluid inlet and outlet to a specific cover stack 505 or a processing region 504. In some embodiments, a remote plasma unit 515 may be optionally included in the chamber system 300 and may be supported on the second cover plate 510. In some embodiments, the remote plasma unit 515 may be fluidically coupled to each hole 512 in the plurality of holes through the second cover plate 510. An isolation valve 520 may be included along each fluid line to provide fluid control to each individual processing region 504. For example, as shown, hole 512a may provide a fluid inlet and outlet to the cover stack 505a. In some embodiments, aperture 512a may also be axially aligned with any lid stack components and substrate support 310a, which may create axial alignment for each component associated with a respective processing zone, such as along a central axis through the substrate support or any component associated with a particular processing zone 504. Similarly, in some embodiments, aperture 512b may provide fluid access to lid stack 505b and may be aligned (including axial alignment with components of the lid stack and substrate support 310b).

[0052] Figure 6 A schematic isometric plan view of one embodiment of a semiconductor processing system 600 according to some embodiments of the present technology is shown. The figure may include components of any of the systems shown and described previously, and may also show further aspects of any of the systems described previously. It should be understood that the illustration may also show exemplary components as would be seen on any of the quadruplet sections 109 described above.

[0053] The semiconductor processing system 600 may include a cover plate 605, which may be similar to the previously described second cover plate 510. For example, the cover plate 605 may define a plurality of holes (similar to holes 512) that provide access to a plurality of processing chambers positioned below the cover plate 605. Each hole in the plurality of holes may be defined to provide fluid access to a particular cover stack, processing chamber, and / or processing region.

[0054] The gas splitter 610 can be disposed on the top surface of the cover plate 605. For example, the gas splitter 610 can be centered between the holes of the cover plate 605. In some embodiments, one or more polymers and / or other insulating spacers, such as PEEK spacers, can be provided between the bottom surface of the gas splitter 610 and the cover plate 605. The spacers can help reduce heat transfer between the gas splitter 610 and the cover plate 605, which can help improve processing conditions and / or reduce power consumption of the system 600 (such as by reducing the amount of power required to heat the gas splitter 610). The gas splitter 610 can be fluidly coupled to a main gas weld 615 that delivers one or more process gases (such as precursors, plasma effluents, and / or purge gases) from a plurality of gas sources to the gas splitter 610. For example, the main gas weld 615 can extend vertically from a gas source (such as a gas panel) positioned below the cover plate 605 and through the feed-through plate 620. The portion of the main gas weld 615 above the feedthrough plate 620 can be bent horizontally and can direct the gas toward the gas splitter 610. In some embodiments, the main gas weld 615 can be disposed within one or more heater jackets 661, which help prevent heat loss along the length of the main gas weld 615.

[0055] As will be discussed further below, the gas splitter 610 can receive gas from the main gas weld 615 and can split the gas flow into a greater number of gas outputs, each of which interfaces with a corresponding one of a plurality of auxiliary welds 630. Each auxiliary weld 630 can deliver purge gas and / or process gas to an output manifold 635 associated with a particular process chamber. For example, the output manifold 635 can be positioned above each hole formed in the cover plate 605 and can be fluidly coupled with the cover stack components to deliver one or more gases to the processing region of the corresponding process chamber.

[0056] The remote plasma unit 660 can be supported on top of the cover plate 605 and can be fluidly coupled to each of the output manifolds 635. For example, each output manifold 635 can define a central hole that can be fluidly coupled to the remote plasma unit 660 using a manifold assembly. The remote plasma unit 660 can be positioned above each output manifold 635. The remote plasma unit 660 can provide precursors, plasma effluents, cleaning gases, and / or purge gases to the output manifolds 635 for subsequent delivery to the processing chamber for film deposition, chamber cleaning, and / or other processing operations. The manifold assembly can include a central manifold that can be coupled to the base of the remote plasma unit 660 and divide the flow of a single gas input from the remote plasma unit 660 to a separate outlet leading to each output manifold 635. Each separate gas outlet of the central manifold can be coupled to a side manifold 675 that defines at least a portion of a dedicated flow path leading to one of the output manifolds 635. In some embodiments, an isolation valve 690 may be positioned between each side manifold 675 and the output manifold 635. The isolation valve 690 may provide fluid control for each process chamber, as well as prevent gas from flowing back into the remote plasma unit 660 and prevent crosstalk between the various process chambers.

[0057] Figure 7 A schematic cross-sectional top view of a gas diverter 610 is shown. The gas diverter 610 may include a body having a top surface 612 and a plurality of side surfaces 614. In some embodiments, the gas diverter 610 may be a unitary structure with any lumens and / or other holes machined into the structure. Such a design may eliminate the need for electron beam welding and / or other joining techniques that may present opportunities for gas leaks and / or uniformity issues. As shown, the gas diverter 610 is octagonal in shape and has eight side surfaces 614, however other numbers of side surfaces 614 may be utilized in various embodiments to meet the needs of a particular application. As just one example, the number of side surfaces may be reduced for systems having less than four processing chambers, and the number of side surfaces may be increased for systems having more than four processing chambers. The gas diverter 610 may include a gas inlet 617 that may engage with an outlet end of a main gas weldment 615 (e.g., Figure 6615 ), which can enable a mixture of one or more gases to flow from a gas source through the main gas weldment 615 and into the gas splitter 610. In some embodiments, the gas inlet 617 can extend through the top surface 612, while in other embodiments, the gas inlet 617 can extend through one of the side surfaces 614 of the gas splitter 610. By positioning the gas inlet 617 through the top surface 612 of the gas splitter 610, a symmetrical flow path can be provided from the gas inlet 617 to each of the plurality of gas lumens 606 defined within the gas splitter 610, which can help to equally distribute the flow of the gas mixture to each of the processing chambers. In some embodiments, the main gas weldment 615 can have a single outlet, which can further improve the uniformity of flow through the main gas weldment 615 (and subsequently the system 600) because the single flow path can be more easily machined or otherwise formed to tight tolerances. However, some embodiments can utilize a main gas weldment that is divided into multiple outlets.

[0058] As described above, the gas splitter 610 can define a plurality of gas lumens 606 extending between and fluidly coupling a gas inlet 617 of the gas splitter 610 and a plurality of gas outlets 608 of the gas splitter 610. At least some of the gas lumens 606 can split the gas flow from a single gas inlet to a plurality of gas outlets 608 such that the gas splitter 610 includes a greater number of gas outlets 608 than gas inlets. As shown, four gas lumens 606 are fluidly coupled to the gas inlet 617 and extend radially outward from the center of the gas splitter 610 to split the flow from the main gas weldment 615 to deliver the gas to four (or other number based on the number of process chambers included in the system 600) different gas outlets 608. The gas lumens 606 can extend from the gas inlet 617 at regular and / or irregular angles. For example, as shown, each gas lumen 606 is positioned at regular intervals so that the angle between each gas lumen 606 and the gas inlet 617 is equal, which can help maintain the flow rate directed to each gas lumen 606 (and subsequently to each processing chamber) at a substantially equal level. In some embodiments, multiple gas outlets 608 and / or gas lumens 606 can match multiple processing chambers of the processing system 600. In some embodiments, each gas outlet 608 can extend through a corresponding side surface 614 of the gas diverter 610. Each gas outlet 608 can be positioned on a different side / region of the gas diverter 610. The flow-dividing arrangement of the gas lumens 606 can enable a single gas source to provide an equal flow rate of gas through each of the four gas outlets 608 using a single main gas weldment 615 (having a single outlet) and a single gas diverter 610.

[0059] In some embodiments, the gas splitter 610 may include a heat source. For example, the heater cartridge 607 may be coupled to and / or embedded in the body of the gas splitter 610. In some embodiments, the heater cartridge 607 may be positioned at the center of the gas splitter 610, which may provide a uniform temperature gradient across the entire gas splitter 610. By providing a heat source within the gas splitter 610, better temperature control may be provided for the system 600, which may improve the quality and uniformity of the film deposition operation. The heat source may heat the gas splitter 610 and / or maintain the heat of the process gas at a temperature of about or greater than 75°C, about or greater than 100°C, about or greater than 125°C, about or greater than 150°C, about or greater than 175°C, about or greater than 200°C, or higher.

[0060] Gas exiting the gas outlet 608 of the gas splitter 610 may enter the inlet end of the auxiliary weldment 630 for delivery to the corresponding output manifold 635. For example, the inlet end of each auxiliary weldment 630 may be coupled to the corresponding side surface 614 of the gas splitter 610 to fluidly couple the auxiliary weldment 630 to one of the gas outlets 608. The gas splitter 610 may also include one or more passive flow control devices that can be used to adjust the flow to each processing chamber. For example, the gas splitter 610 may include a plurality of baffles 621. In addition to being able to adjust the flow rate for each chamber, the baffles 621 may also be used as passive flow control devices, which enable downstream components (including output weldments, manifolds, cover stacks, etc.) to be modified or replaced without any further flow rate adjustments. Each baffle 621 may be positioned at the interface of one of the auxiliary weldments 630 and a corresponding one of the gas outlets 608 of the gas splitter 610. For example, the opening of each gas outlet 608 of the gas splitter 610 may include a baffle 621. As shown, each gas outlet 608 may define and / or otherwise include a slot that enables the baffle 621 to be inserted and removed from the interface between the gas outlet 608 and the auxiliary weldment 630. Fig. 8A A schematic isometric view of one embodiment of a baffle 621 secured to the gas outlet 608 of the gas splitter 610 is shown (although some embodiments may alternatively or additionally include a baffle at the inlet end of the auxiliary weldment 630). The baffle 621 may be received and secured within a groove formed at the gas outlet 608. In some embodiments, one or more O-rings may be used to seal the interface to prevent any gas flowing through the baffle 621 from leaking out of the interface, such as Figure 8B. Each baffle 621 may define a central orifice 623 for blocking the flow of gas to each processing chamber. For example, the central orifice 623 of each baffle 621 may have a reduced hole size relative to the gas lumen 606 and the auxiliary weldment 630. As shown, the upstream side of the central orifice 623 may have a smaller diameter than the downstream side of the central orifice 623. For example, the diameter of the central orifice 623 may taper from the upstream side to the downstream side of the baffle 621 and / or the diameter increases sharply. In other embodiments, the central orifice 623 may have a constant diameter throughout the thickness of the baffle 621. The reduced diameter of the central orifice 623 relative to the diameter of the gas lumen 606 / gas outlet 608 and the auxiliary weldment 630 enables the central orifice 623 to be used as a passive flow control device, which enables downstream components (including output weldments, manifolds, cover stacks, etc.) to be modified or replaced without any further flow adjustments. Each central orifice 623 may have an inner diameter between about 1.70 mm and about 2.40 mm, such as between about 1.80 mm and about 2.30 mm, between about 1.80 mm and about 2.10 mm, or between about 2.00 mm and about 2.30 mm. The diameter of the central hole 623 may be the same or different on each baffle 621. For example, if there is a flow rate and / or deposition rate mismatch in one or more chambers, the baffle 621 associated with one or more chambers may be replaced with a baffle 621 having a central orifice 623 of a different diameter. The difference in diameter can help correct any such mismatch to deliver a more uniform flow rate and / or deposition rate on each processing chamber. In some embodiments, the system 600 may include a plurality of different baffles 621 having a central orifice 623 of different diameters. For example, a plurality of different baffles 621 having diameters spaced apart at one or more intervals may be provided, which enables the flow rate to each chamber to be carefully adjusted with the desired accuracy. The diameter spacing of each central orifice 623 can be between 0.005 mm and 0.1 mm or about the value, between 0.00725 mm and 0.075 mm or about the value, between 0.01 mm and 0.05 mm or about the value, or between 0.02 mm and 0.04 mm or about the value, wherein smaller spacing provides higher tuning accuracy. The number and spacing of the central orifices 623 of the baffle 621 equipped with the system 600 can depend on the flow rate and / or deposition rate mismatch adjustment range and / or the desired uniformity accuracy.

[0061] As described above, the main gas weldment 615 can be coupled to a gas source (such as a gas panel 695). Fig. 9A partially schematic isometric view of a gas panel 695 and associated components of a semiconductor processing system 600 according to some embodiments of the present technology is shown. The main gas weld 615 may include a main gas weld inlet 618. The main gas weld 615 may extend to and be fluidly coupled to at least one gas mixing valve 680 (e.g., the main gas weld inlet 618). The at least one gas mixing valve 680 may have a first valve inlet 681, a second valve inlet 682, and a valve outlet 683. The at least one gas mixing valve 680 may control the flow (on / off, flow rate, etc.) of the corresponding gas to the main gas weld 615, and may be used to mix multiple gases before delivering the process gas to the gas splitter 610. The valve outlet 683 may be in fluid communication with the main gas weld inlet 618 of the main gas weld 615. It is contemplated that more than two valve inlets through which more than two process gases flow may be in fluid communication with the main gas weld inlet 618 of the main gas weld 615 via at least one gas mixing valve 680. That is, multiple gas mixing valves can combine more than two process gases.

[0062] As previously described, the processing system 600 may include a gas panel 695. The gas panel 695 may include a first gas source 696 and a second gas source 697. The first gas source 696 may be fluidly coupled to the first valve inlet 681, such as through one or more weldments. The outlet of the first gas source 691 may be fluidly coupled to the main gas weld 615 directly or indirectly via one or more weldments having an outlet in fluid communication with the main gas weld 615. The second gas source 697 may be fluidly coupled to the second valve inlet 682, such as through one or more weldments. For example, the outlet of the second gas source 697 may be fluidly coupled to the main gas weld 615. One or more gas heaters 685 may be disposed upstream of one or more gas mixing valves. Each gas heater 685 may include an inlet and an outlet. The inlet may be coupled to the outlet of the one or more gas sources, and the outlet of the gas heater 685 may be coupled to one of the valve inlets. This may enable one or more gases to flow through the gas heater 685, which may then heat the gas to a desired temperature for a given processing operation. As shown, the inlet of the gas heater 685 can be coupled to the outlet of the first gas source 696, and the outlet of the gas heater 685 is coupled to the first valve inlet 681. The gas heater 685 can heat the first gas delivered from the first gas source 696 before delivering the first gas to the first valve inlet 681. The first gas and the second gas (supplied by the second gas source 697) can be mixed in the mixing valve 680 and can flow into the main gas welding piece 615 (via the valve outlet 683) to be delivered to the gas splitter 610 and the processing chamber. In a particular embodiment, the first gas can be an oxygen-containing precursor and / or a nitrogen-containing precursor, and the second gas can be a silicon-containing precursor, but other combinations of gases are also possible in various embodiments. The silicon-containing precursor can be or include, but is not limited to, tetraethyl orthosilicate ("TEOS"), silane, disilane, or other silicon-containing materials. The oxygen-containing precursor can be or include, for example, diatomic oxygen, ozone, or other oxygen-containing materials. The nitrogen-containing precursor can be doped with oxygen, water, alcohol, or other materials. For example, in one embodiment, the first gas can be O 2 , which may be heated before being mixed with TEOS (second gas) and delivered to gas distributor 610 for distribution to various processing chambers.

[0063] As previously discussed, various welds may be surrounded by heater jackets, such as heater jacket 661. In embodiments, the main gas weld 615 may be surrounded by between one and six heater jackets, such as between one and five heater jackets, between one and four heater jackets, between one and three heater jackets, or between one and two heater jackets. For example, the main gas weld 615 and / or other components (including the auxiliary weld 630) may each include one or more dedicated heater jackets 661. This may enable any number of heater jackets 661 to be used to match the profile of the jacketed component, which may simplify the manufacture, installation, and / or maintenance of the heater jackets 661 and / or the jacketed components. Each heater jacket 661 may isolate all or a portion of a corresponding area of ​​the gas delivery architecture to maintain the process gas at a desired temperature. For example, the process gas may be heated near the gas panel 695 (such as via the gas heater 685) and / or in the gas diverter 610 (using the heater cartridge 607). The heater sheath 661 may help maintain the temperature of the heated process gas, which may help reduce the power consumption of the processing system 600. Due to the architecture of the present embodiment, fewer heater sheaths may be required than with conventional techniques.

[0064] The processing system 600 may include a diverter weld 665 near the gas panel 695. The diverter weld 665 can be used to divert the process gas away from the processing chamber and into the exhaust system. The process gas may be diverted away from the processing chamber for a variety of reasons. For example, a portion of the process gas can be diverted from one or more processing chambers to adjust the flow rate of the process gas to each chamber, such as to balance the flow to each chamber. In other cases, the process gas can be diverted away from each processing chamber while the gas panel or other gas source increases the flow rate of the process gas to the full flow rate. This diversion of the process gas can be performed to ensure that only the full flow is delivered to the chamber, which can help improve the control of the deposition rate in each processing chamber. As shown, the diverter weld 665 can be coupled to the main input weld 615 downstream and / or downstream of at least one mixing valve 680. The diverter valve 666 can be positioned on the main gas weld 615 and / or otherwise fluidly coupled to the main gas weld 615. The diverter valve 666 may include a valve inlet that can be fluidly coupled to the gas panel 695. The diverter valve 666 may have a first diverter valve outlet and a second diverter valve outlet. The first diverter valve outlet may be in fluid communication with the main input weldment 615. The second diverter valve outlet may be in fluid communication with the foreline 667 and / or the gas panel. Depending on whether the process gas needs to be diverted, the diverter valve 666 may be opened and send part or all of the process gas to the diverter weldment 665. The diverter valve 666 may be closed and / or otherwise actuated to allow gas to flow to the main input weldment 615 through the first diverter valve outlet. The diverter weldment 665 may be in fluid communication with the foreline 667. When the process gas is diverted away from the processing chamber, the foreline 667 may pump out and / or otherwise exhaust gas and particles.

[0065] Fig.10 The operations of an exemplary semiconductor processing method 1000 according to some embodiments of the present technology are shown. The method can be performed using various processing systems, including processing systems 100 and 600. The processing system may include any of the components, features, or configurations described above. The method 1000 may include a number of optional operations that may or may not be specifically associated with some embodiments of the method according to the present technology.

[0066] Method 1000 may be performed to heat, mix and distribute the process gases to the process chambers to achieve uniform flow rates and / or deposition rates across the various chambers. At optional step 1005, method 1000 may include combining at least a first process gas and a second process gas to form a process gas mixture. As previously described, the process gas may include a silicon-containing precursor, an oxygen-containing precursor, and / or a nitrogen-containing precursor. However, it is contemplated that any combination of process gases may be combined. In one embodiment, the first process gas may be TEOS and the second process gas may be diatomic oxygen. As will be appreciated by those skilled in the art, other process gases or combinations of process gases may be used depending on the desired process to be performed in the processing system.

[0067] At step 1010, method 1000 may include heating at least one of at least two process gases before introducing the process gas mixture into the main gas weld. For example, at least one gas may be passed through a gas heater to heat the gas. It is contemplated that the process gas mixture may be heated, however, in some embodiments, it may be desirable to heat only less than all of the process gases in the process gas mixture. For example, the second gas may be heated without heating the first gas (until the gases merge to form a mixture). In other words, the heating operation may be performed before and / or after the gases are combined. A particular heating arrangement may be selected based on the properties or characteristics of the process gases delivered to the process chamber. For example, if some individual process gases and / or process gas mixtures are heated, the properties of the gases and / or mixtures may change. In addition, for high flow recipes, a separate heater sheath may not be sufficient to heat the gases to the desired temperature, thus requiring the use of a heater near the gas panel. In embodiments where the process gas includes TEOS and diatomic oxygen, the oxygen may be heated while the TEOS may not be heated.

[0068] At step 1015, method 1000 may include introducing a process gas mixture into a main gas weld. The mixture may include at least two process gases. As previously described, a gas splitter may have multiple input welds. However, in embodiments, a single gas splitter (such as a main gas weld) may deliver all necessary process gas mixtures. In addition, the main gas weld may have multiple outlets coupled to the gas splitter, but each outlet may transfer the same or similar process gas mixture to the gas splitter. At step 1020, method 1000 may include flowing the process gas mixture into the gas splitter via a gas inlet. At step 1025, method 1000 may include splitting the process gas mixture flow into a plurality of gas lumens defined by the gas splitter. At step 1030, method 1000 may include flowing a portion of the process gas mixture into a respective process chamber via a plurality of auxiliary gas welds coupled to a gas outlet end of each of the plurality of gas lumens. In embodiments, a portion of the mixed process gas may be delivered to each respective process chamber.

[0069] At optional step 1035, method 1000 may include directing the diverted portion of the process gas mixture into the foreline. One or more weldments and / or valves in or near the gas panel and / or (multiple) other gas sources may be used to divert the gas. At optional step 1240, method 1200 may include causing the diverted portion of the process gas mixture to flow through the diverting weldment and into the foreline and / or other destination. Each processing station may share a common diverting weldment that causes the diverted portion of the process gas mixture to flow away from the processing system. The diversion of the gas may occur before heating, mixing and / or flowing the gas (e.g., before steps 1005, 1010 and / or 1015). For example, one or more gases may be diverted until the gas source increases the flow rate of the process gas to the full flow rate to adjust the flow rate of the process gas to each chamber, and / or to achieve another purpose.

[0070] By using a single process supply weldment to the gas diverter, a more uniform flow can be delivered to each process chamber. In addition, by using a single process weldment, multiple separate valves associated with the diverted portion of the supply are not required at the outlet of the gas diverter. A single valve controlling the process gas flow can reduce the possibility of pressure spikes and / or timing mismatches associated with multiple valves. Through more uniform flow and adjustment of the orifice size, the deposition rate between multiple process chambers can be more uniform. In addition, the use of a single valve reduces the power requirements associated with the system. Finally, heating upstream of the inlet of the single process supply weldment can allow better control of the heating and again allow for lower power requirements.

[0071] In the foregoing description, for the purpose of explanation, many details have been set forth in order to provide an understanding of various embodiments of the present technology. However, it is apparent to one skilled in the art that certain embodiments may be implemented without some of these details or with additional details.

[0072] Several embodiments have been disclosed, and those skilled in the art will recognize that various modifications, alternative constructions, and equivalents may be used without departing from the spirit of the embodiments. In addition, in order to avoid unnecessarily confusing the present technology, many well-known processes and elements are not described. Therefore, the above description should not be considered to limit the scope of the present technology.

[0073] Where a range of values ​​is provided, it is understood that each intermediate value (unless the context clearly dictates otherwise, it is the smallest fraction to the lower limit unit), intermediate values ​​between the upper and lower limits of the range are also specifically disclosed. Any narrower range between any specified value or unspecified intermediate value within a specified range and any other specified or intermediate value within the specified range is included. The upper and lower limits of these smaller ranges may be independently included in or excluded from the range, and each range (where one of the limits is included, neither of the limits is included, or both are included in each range in the smaller range) is also included in the technology, subject to any explicitly excluded limits in the range. If the range includes one or both of the limits, then that range that excludes one or both of the included limits is also included.

[0074] As used herein and in the appended claims, the singular forms "a," "an," and "the" include plural references unless the context clearly dictates otherwise. Thus, for example, reference to "a cover" includes a plurality of such covers and reference to "the gas splitter" includes reference to one or more gas splitters and equivalents thereof known to those skilled in the art, and so forth.

[0075] Furthermore, when the words “comprise(s)”, “comprising”, “contain(s)”, “containing”, “include(s)” and “including” are used in this specification and the following claims, they are intended to specify the presence of stated features, integers, components or operations, but do not preclude the presence or addition of one or more other features, integers, components, operations, actions or groups.

Claims

1. A semiconductor processing system comprising: a plurality of processing chambers, each processing chamber defining a processing region; a cover plate positioned above the plurality of processing chambers; A gas diverter, the gas diverter is disposed on the cover plate, the gas diverter comprises a top surface and a plurality of side surfaces, wherein the gas diverter defines: Single gas inlet; one or more gas outlets; as well as one or more gas lumens extending between and fluidly coupling the single gas inlet and each of the one or more gas outlets; a main gas weld extending to and fluidly coupled to the single gas inlet, wherein the main gas weld delivers a mixture of process gases to the plurality of process chambers; at least one gas mixing valve having a first valve inlet, a second valve inlet, and a valve outlet, wherein the valve outlet is coupled to an inlet end of the primary gas weldment; and One or more auxiliary gas weldments extending between and fluidly coupling each of the one or more gas outlets and a corresponding one of the plurality of processing chambers.

2. The semiconductor processing system of claim 1 , further comprising: A gas panel includes a first gas source fluidly coupled to the first valve inlet and a second gas source fluidly coupled to the second valve inlet.

3. The semiconductor processing system of claim 1 , further comprising: A gas heater is disposed upstream of at least one mixing valve, wherein the gas heater is operable to preheat at least one of the process gas mixtures.

4. The semiconductor processing system of claim 1 , further comprising: A diverter weld is provided, the diverter weld being in fluid communication with the main gas weld adjacent the gas panel.

5. The semiconductor processing system of claim 1 , further comprising: One or more orifices disposed between the one or more gas outlets and the plurality of processing chambers, wherein an inner diameter of the one or more orifices is smaller than an inner diameter of a fluid line disposed upstream and downstream relative to each of the one or more orifices.

6. The semiconductor processing system of claim 1, further comprising: One to six heater sheaths, the one to six heater sheaths surrounding the main gas weldment.

7. The semiconductor processing system of claim 1, further comprising: A plurality of output manifolds are disposed on the cover plate, wherein each of the one or more assist gas weldments is fluidly coupled to a respective one of the plurality of output manifolds.

8. A semiconductor processing system comprising: Cover plate; A gas diverter, the gas diverter is disposed on the cover plate, the gas diverter comprises a top surface and a plurality of side surfaces, wherein the gas diverter defines: Gas inlet; one or more gas outlets; as well as one or more gas lumens extending between the gas inlet and each of the one or more gas outlets and fluidly coupling the gas inlet with each of the one or more gas outlets; a main gas weld extending to and fluidly coupled to the gas inlet, wherein the main gas weld delivers a process gas mixture to a plurality of process chambers; a gas panel including a first fluid source and a second fluid source, the first fluid source and the second fluid source each being fluidly coupled to the primary gas welder; as well as One or more auxiliary gas weldments extending between and fluidly coupling each of the one or more gas outlets and a corresponding one of the plurality of processing chambers.

9. The semiconductor processing system of claim 8, further comprising: A gas heater is in fluid communication with the main gas weldment, wherein the gas heater is operable to preheat at least one of the process gas mixtures.

10. The semiconductor processing system of claim 8, further comprising: A diverter weld is in fluid communication with the main gas weld proximate the gas panel.

11. The semiconductor processing system of claim 10, further comprising: One or more orifices between the one or more gas outlets and the plurality of processing chambers, wherein an inner diameter of the one or more orifices is smaller than an inner diameter of a fluid line disposed upstream and downstream relative to each of the one or more orifices.

12. The semiconductor processing system of claim 11, wherein: The one or more apertures are removable such that an inner diameter of the one or more apertures may be varied.

13. The semiconductor processing system of claim 12, wherein: Each of the one or more apertures includes an inner diameter between about 1.70 mm and about 2.40 mm.

14. The semiconductor processing system of claim 8, further comprising: Between one and six heater sheaths, wherein between one and six heater sheaths surround the main gas weldment.

15. The semiconductor processing system of claim 8, further comprising: At least one gas mixing valve having a first valve inlet, a second valve inlet and a valve outlet, wherein: the first valve inlet being in fluid communication with a gas heater operable to heat the gas prior to being passed to the first valve inlet; and The valve outlet is coupled to an inlet end of the main gas weldment.

16. A semiconductor processing method comprising: introducing a process gas mixture into the main gas weldment, wherein the process gas mixture comprises at least two process gases; flowing the process gas mixture into a gas splitter via a gas inlet; splitting the flow of the process gas mixture into a plurality of gas lumens defined by the gas splitter; as well as A portion of the process gas mixture is flowed into a corresponding process chamber via a plurality of assist gas weldments coupled to a gas outlet end of each of the plurality of gas lumens.

17. The semiconductor processing method of claim 16, further comprising: At least one of the process gas mixtures is heated prior to introducing the process gas mixtures into the main gas weldment.

18. The semiconductor processing method of claim 16, further comprising: directing a diverted portion of the process gas mixture to a divert weldment; as well as The diverted portion of the process gas mixture is caused to flow through the divert weldment and into a divert foreline.

19. The semiconductor processing method of claim 16, further comprising: At least a first process gas and a second process gas are combined to form the process gas mixture.

20. The semiconductor processing method of claim 19, wherein: The first process gas comprises O2, and the second process gas comprises TEOS; and The method includes heating the O2 prior to combining the O2 with the TEOS.

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