Gas supply device and film forming device

Abstract

The invention discloses a gas supply device and a film forming device. The gas supply device comprises a base; the air inlet top cover is arranged at the top end of the base; the water cooling plate is arranged on the base; and the first partition ring group is arranged on the gas partition plate. And the second partition ring group is arranged on the water cooling plate. Part of the partition rings in the third partition ring group surround the first partition ring group, and the third partition ring group and the first partition ring group form an upper central area space, a first upper edge area space and a second upper edge area space which are mutually independent; and the other subarea rings in the third subarea ring group surround the second subarea ring group and form a lower central area space, a first lower edge area space and a second lower edge area space which are mutually independent with the second subarea ring group. According to the gas supply device and the gas supply method, gas can be independently supplied to the interior of the reaction cavity in a partitioned mode under the condition that the requirement for the simple pipeline structure is met, and the source efficiency of the reaction gas can also be improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor equipment, and in particular to a gas supply device and a film forming device. Background Art

[0002] Existing film forming devices such as CVD (Chemical Vapor Deposition) equipment usually require that a variety of reaction gas raw materials be introduced into a reaction chamber for reaction, thereby growing an epitaxial thin film on a substrate in the reaction chamber.

[0003] However, the existing gas supply device or structure is used to supply gas to the reaction chamber in a pre-mixed manner, that is, multiple reaction gas raw materials are pre-mixed in the gas pipeline outside the reaction chamber, and then introduced into the reaction chamber by the gas supply device. However, different reaction gases have different reaction temperatures. For example, some reaction gases can pre-react at room temperature. Therefore, the reaction gas will pre-react in the gas pipeline outside the reaction chamber, producing reaction by-products (for example, particles), which will have an adverse effect on the subsequent film-making process.

[0004] In order to realize the zoned gas supply in the reaction chamber, the prior art requires the use of multiple sets of pipelines to be introduced into different areas of the gas supply device, but this solution has the problem of complex pipeline structure. In addition, the existing gas supply device or structure also has the problem of low reaction gas utilization rate and poor uniformity of the generated film.

[0005] Therefore, there is an urgent need for a gas supply device that can simplify the gas supply pipeline to realize independent gas supply to the reaction chamber in different zones, improve the source efficiency of the reaction gas, and adjust the uniformity of the thin film at the edge of the wafer. Summary of the invention

[0006] The present invention aims to provide a gas supply device and a film forming device ， The purpose is to simplify the gas supply pipeline to realize independent gas supply to the reaction chamber in different areas, improve the source efficiency of the reaction gas, and adjust the film at the edge of the wafer.

[0007] In order to achieve the above objectives, the present invention is implemented by the following technical solutions:

[0008] A gas supply device, used for introducing a variety of reaction gases into a reaction chamber of a film forming device, comprises: a base, which is arranged on the reaction chamber; an air intake cover, which is arranged on the top of the base; a water cooling plate, which is arranged between the bottom end of the air intake cover and the top of the base; the air intake cover and the water cooling plate constitute a accommodating space, at least one gas separation plate, which is arranged on the air intake cover and is located in the accommodating space, and is used to separate the accommodating space into independent upper accommodating space and lower accommodating space.

[0009] The first partition ring group is arranged on the gas partition plate and is used to divide the upper accommodating space into an independent upper central area space and an upper edge area space.

[0010] The second partition ring group is arranged on the water cooling plate and is used to divide the lower accommodating space into an independent lower central area space and a lower edge area space.

[0011] A third partition ring group, wherein the partition rings in the third partition ring group located on the gas partition plate are arranged around the first partition ring group to divide the upper edge area space into an independent first upper edge area space and a second upper edge area space.

[0012] The partition ring in the third partition ring group, which is located on the water cooling plate, is arranged around the second partition ring group, and is used to separate the lower edge area space into an independent first lower edge area space and a second lower edge area space.

[0013] The upper central area space is provided with a first central air inlet channel and a first central air outlet channel, wherein the first central air inlet channel is used to introduce any one of a plurality of reaction gases therein; the first central air outlet channel runs through the lower central area space and is connected to the reaction chamber, and is used to introduce the reaction gas in the upper central area space into the reaction chamber.

[0014] The first upper edge area space is provided with a first edge air inlet channel and a first edge air outlet channel, the first edge air inlet channel is used to introduce any one of a plurality of reaction gases therein; the first edge air outlet channel runs through the first lower edge area space and is connected to the reaction chamber, and is used to introduce the reaction gas in the first upper edge area space into the reaction chamber.

[0015] The first lower central area space is provided with a second central air inlet channel and a second central air outlet channel, and the second central air inlet channel is used to introduce any one of a plurality of reaction gases therein; the second central air outlet channel passes through the water cooling plate and is connected to the reaction chamber, and is used to introduce the reaction gas in the lower central area space into the reaction chamber.

[0016] The second upper edge region space is provided with a third edge air inlet channel, and the third edge air inlet channel is used to introduce purge gas thereinto.

[0017] The second upper edge region space is connected to the second lower edge region space, and the second lower edge region space is provided with a third edge gas outlet channel, which passes through the water cooling plate and is connected to the reaction chamber, and is used to pass the purge gas into the reaction chamber. The purge gas surrounds the reaction gas.

[0018] Optionally, the first central air inlet channel and the first edge air inlet channel respectively penetrate the top of the air inlet cover and are connected to the corresponding external gas sources of the reaction gas.

[0019] Optionally, the second central air inlet channel and the second edge air inlet channel respectively penetrate through the side walls of the air inlet cover and are connected to corresponding external gas sources of the reaction gas.

[0020] Optionally, the third edge air inlet channels respectively penetrate the air inlet top cover and are connected to a corresponding external gas source of the purge gas.

[0021] Optionally, the gas separation plate is provided with a first central air outlet hole and a first edge air outlet hole.

[0022] Optionally, it further includes: a first gas uniforming plate, which is arranged in the upper accommodating space and parallel to the gas separation plate, and is used to adjust the gas flow distribution of the reaction gas and the purge gas in the upper accommodating space.

[0023] Optionally, the first partition ring group includes: a first partition ring and a second partition ring, and the first partition ring is arranged between the first air homogenizing plate and the air intake top cover;

[0024] The second partition ring is disposed between the first gas uniformizing plate and the gas dividing plate.

[0025] Optionally, a plurality of first air uniforming holes are spaced apart on the first air uniforming plate.

[0026] Optionally, a second gas uniformizing plate is disposed in the lower accommodating space and parallel to the gas separation plate, and is used to adjust the gas flow distribution of the reaction gas and the purge gas in the lower accommodating space.

[0027] Optionally, the second partition ring group includes: a third partition ring and a fourth partition ring, and the third partition ring is arranged between the second gas uniformizing plate and the gas separation plate.

[0028] The fourth partition ring is arranged between the second air uniforming plate and the water cooling plate.

[0029] The third partition ring group includes: a fifth partition ring to an eighth partition ring, and the fifth partition ring is arranged around the first partition ring and is located on the first air uniforming plate.

[0030] The sixth partition ring is arranged around the second partition ring and is located between the first gas uniformizing plate and the gas partition plate.

[0031] The seventh partition ring is arranged around the third partition ring and is located between the gas partition plate and the second gas uniformizing plate.

[0032] The eighth partition ring is arranged around the fourth partition ring and is located between the second air uniforming plate and the water cooling plate.

[0033] Optionally, the second air uniforming plate is provided with a plurality of second air uniforming holes spaced apart from each other; second central air outlet holes corresponding one-to-one to the first central air outlet holes; and second edge air outlet holes corresponding one-to-one to the first edge air outlet holes.

[0034] Optionally, the water cooling plate includes a plurality of third central air outlet holes, a plurality of third edge air outlet holes and a plurality of fourth edge air outlet holes.

[0035] Among the plurality of the third central air outlet holes, those corresponding to the second central air outlet holes are used as outlets for the reaction gas in the space of the upper central area, and the others are used as outlets for the reaction gas in the space of the lower central area.

[0036] Several of the third edge air outlet holes corresponding to the second edge air outlet holes are used as air outlets for the reaction gas in the first upper edge area space, and the others are used as air outlets for the reaction gas in the first lower edge area space; several of the fourth edge air outlet holes are used as air outlets for the purge gas in the second lower edge area space.

[0037] Optionally, the water-cooling plate is hollow inside and is passed with a cooling medium for cooling the reaction gas and the purge gas near the water-cooling plate.

[0038] Optionally, it further includes: a plurality of first air ducts, each of the first air ducts is connected to the corresponding first central air outlet hole, and the second central air outlet hole and the third central air outlet hole constitute the first central air outlet channel.

[0039] A plurality of second air ducts, each of which is connected to the corresponding first edge air outlet hole, and the second edge air outlet hole and the third edge air outlet hole constitute the first edge air outlet channel.

[0040] Optionally, it also includes: a protection plate, which is arranged on the top of the base and below the water cooling plate.

[0041] Optionally, the protective plate is provided with a plurality of fourth central air outlet holes and a plurality of fifth edge air outlet holes, wherein the one connected to the first air duct serves as the air outlet of the first central air outlet channel; and the one connected to the second air duct serves as the air outlet of the first edge air outlet channel.

[0042] Optionally, the base includes a bearing portion and a supporting portion; the bearing portion is located at the top of the base, the top of the supporting portion is connected to the bearing portion, and the bottom of the supporting portion is connected to the top of the reaction chamber; the interior of the supporting portion is hollow to form a temperature suppression zone.

[0043] Optionally, the bearing portion is annular and is provided with an extension portion, which extends radially toward the center; the air intake top cover, the water cooling plate and the protection plate are sequentially mounted on the extension portion.

[0044] Optionally, a diameter of the support portion gradually increases in a direction away from the bearing portion.

[0045] Optionally, the supporting portion is truncated cone-shaped as a whole.

[0046] Optionally, it further includes: a protective ring, which surrounds and is arranged close to the inner side wall of the support portion.

[0047] Optionally, it further comprises: an air guide ring mounted on the extension portion of the base, the air guide ring being located between the air intake cover and the extension portion; the second central air intake channel sequentially penetrates the side walls of the third partition ring and the seventh partition ring, the air guide ring body and the air intake cover are in communication with an external corresponding gas source of the reaction gas; the second edge air intake channel sequentially penetrates the seventh partition ring, the air guide ring body and the air intake cover are in communication with an external corresponding gas source of the reaction gas.

[0048] Optionally, the air guide ring and the air intake cover are integrated into one piece.

[0049] Optionally, the purge gas is argon or hydrogen.

[0050] On the other hand, the present invention further provides a film forming device, comprising the gas supply device as described above, wherein the gas supply device is used to provide process gas required for film forming on a substrate.

[0051] Optionally, the purge gas provided by the gas supply device forms an annular edge purge zone, and the inner diameter of the edge purge zone is greater than or equal to the diameter of the substrate.

[0052] The present invention has at least one of the following advantages:

[0053] The present invention provides a gas supply device that forms several independent chambers through a gas partition plate, a first partition ring group, a second partition ring group and a third partition ring, wherein a corresponding raw material gas is introduced into each chamber formed by the first partition ring group and the second partition ring group to prevent the raw material gas from pre-reacting inside or outside the gas supply device. A purge gas is introduced into the chamber formed by the third partition ring group and the inner wall of the reaction chamber, and the purge gas surrounds the reaction gas at the side of the reaction gas, reducing the diffusion of the reaction gas toward the side wall of the reaction chamber, thereby improving the utilization rate of the reaction gas; at the same time, the uniformity of the thin film generated on the substrate is improved. In addition, the reaction gas is confined in the reaction zone by the purge gas, reducing the diffusion of the reaction gas to the side wall of the reaction chamber, reducing the formation of a coating on the side wall of the reaction chamber, and extending the maintenance period of the reaction chamber. A gas supply device provided by the present invention is provided with a water cooling structure (water cooling plate, temperature suppression zone) at its gas outlet position, so as to further keep the interior of the temperature suppression zone at a lower temperature (for example, lower than 400 degrees), avoid the generation of reaction by-products, and extend the maintenance period of the gas supply device.

[0054] At the same time, for each raw gas, 2 or more partitions (upper / lower center area space and upper / lower edge area space) can be set to facilitate process adjustment of gas source concentration and flow rate in different areas (upper / lower center area space and upper / lower edge area space).

[0055] The first to third partition ring groups are respectively provided with partition rings having the same or different diameters. By replacing the partition rings, the position of the partition and the size of the corresponding area can be conveniently adjusted.

[0056] A gas supply device provided by the present invention is provided with a gas uniforming plate inside to make the gas flow into the reaction chamber uniform. The gas flow field distribution can be conveniently adjusted by adjusting the aperture size or density of different positions of the gas uniforming plate. BRIEF DESCRIPTION OF THE DRAWINGS

[0057] Figure 1 A schematic cross-sectional structure diagram of a gas supply device provided in one embodiment of the present invention;

[0058] Figure 2 A schematic diagram of the three-dimensional structure of a partition ring in a gas supply device provided in one embodiment of the present invention;

[0059] Figure 3 A schematic diagram of the cross-sectional position direction of a gas supply device provided by one embodiment of the present invention;

[0060] Figure 4 A gas supply device provided in one embodiment of the present invention is provided along Figure 3 Schematic diagram of the structure after cutting along the AA line;

[0061] Figure 5 A gas supply device provided in one embodiment of the present invention is provided along Figure 3 Schematic diagram of the structure after cutting along line BB in FIG.

[0062] Figure 6 A gas supply device provided in one embodiment of the present invention is provided along Figure 3 Schematic diagram of the structure after cutting along the CC line;

[0063] Figure 7 A gas supply device provided in one embodiment of the present invention is provided along Figure 3 Schematic diagram of the structure after cutting along the DD line;

[0064] Figure 8 A schematic structural diagram of a film forming device provided in one embodiment of the present invention. DETAILED DESCRIPTION

[0065] The following is a further detailed description of a gas supply device and a film forming device proposed in the present invention in combination with the accompanying drawings and specific embodiments. According to the following description, the advantages and features of the present invention will become clearer. It should be noted that the drawings are in a very simplified form and use non-precise proportions, which are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention. In order to make the purposes, features and advantages of the present invention more obvious and easy to understand, please refer to the accompanying drawings. It should be noted that the structures, proportions, sizes, etc. illustrated in the drawings of this specification are only used to match the contents disclosed in the specification for people familiar with this technology to understand and read, and are not used to limit the limiting conditions for the implementation of the present invention, so they have no technical substantive significance. Any structural modification, change in proportional relationship or adjustment of size, without affecting the effects that can be produced by the present invention and the purposes that can be achieved, should still fall within the scope of the technical content disclosed by the present invention.

[0066] like Figure 1 and Figure 8As shown, this embodiment provides a gas supply device, which is used to introduce a variety of reaction gases required for film formation on a substrate into a reaction chamber of a film forming device, including: a base 101, which is arranged on the reaction chamber; an air intake cover 100, which is arranged on the top of the base 101; a water cooling plate 400, which is arranged at the bottom of the air intake cover 100; the air intake cover 100 and the water cooling plate 400 constitute a accommodating space, at least one gas separation plate 200, located in the accommodating space, for dividing the accommodating space into independent upper accommodating space and lower accommodating space.

[0067] The first partition ring group is arranged on the gas partition plate 200 and is used to divide the upper accommodating space into an independent upper central area space 1001 and an upper edge area space.

[0068] The second partition ring group is arranged on the water cooling plate 400 and is used to divide the lower accommodating space into an independent lower central area space 1003 and a lower edge area space.

[0069] A third partition ring group, wherein the partition rings in the third partition ring group located on the gas partition plate 200 are arranged around the first partition ring group to divide the upper edge area space into an independent first upper edge area space 1002 and a second upper edge area space 1005;

[0070] The partition ring in the third partition ring group, which is located on the water cooling plate 400 , is arranged around the second partition ring group, and is used to separate the lower edge area space into an independent first lower edge area space 1004 and a second lower edge area space 1006 .

[0071] The upper central area space 1001 is provided with a first central air inlet channel 701 and a first central air outlet channel 800, wherein the first central air inlet channel 701 is used to introduce any one of a plurality of reaction gases therein; the first central air outlet channel 800 runs through the lower central area space 1003 and is connected to the reaction chamber 910, and is used to introduce the reaction gas in the upper central area space 1001 into the reaction chamber 910.

[0072] The first upper edge area space 1002 is provided with a first edge air inlet channel 702 and a first edge air outlet channel 801, wherein the first edge air inlet channel 702 is used to introduce any one of a plurality of reaction gases therein; the first edge air outlet channel 801 runs through the first lower edge area space 1004 and is connected to the reaction chamber 910, and is used to introduce the reaction gas in the first upper edge area space 1002 into the reaction chamber 910.

[0073] The lower central area space 1003 is provided with a second central air inlet channel 711 and a second central air outlet channel 810, and the second central air inlet channel 711 is used to introduce any one of a plurality of reaction gases therein; the second central air outlet channel 810 passes through the water cooling plate 400 and is connected to the reaction chamber 910, and is used to introduce the reaction gas in the lower central area space 1003 into the reaction chamber 910.

[0074] The first lower edge area space 1004 is provided with a second edge air inlet channel 710 and a second edge air outlet channel 802, and the second edge air inlet channel 710 is used to introduce any one of a plurality of reaction gases therein; the second edge air outlet channel 802 runs through the water cooling plate 400 and is connected to the reaction chamber 910, and is used to introduce the reaction gas in the first lower edge area space 1004 into the reaction chamber 910.

[0075] The second upper edge region space 1005 is provided with a third edge air inlet channel 720, and the third edge air inlet channel 720 is used to introduce a purge gas thereinto.

[0076] The second upper edge area space 1005 is connected to the second lower edge area space 1006. The second lower edge area space 1006 is provided with a third edge gas outlet channel 803, which passes through the water cooling plate 400 and is connected to the reaction chamber 910, and is used to pass the purge gas into the reaction chamber 910; the purge gas surrounds the reaction gas.

[0077] A gas supply device provided in this embodiment forms several independent chambers through a gas partition plate, a first partition ring group, a second partition ring group and a third partition ring, wherein corresponding raw material gas is introduced into each chamber formed by the first partition ring group and the second partition ring group to prevent the raw material gas from pre-reacting inside or outside the gas supply device. A purge gas is introduced into the chamber formed by the third partition ring group and the inner wall of the reaction chamber, and the purge gas surrounds the reaction gas at the side of the reaction gas, reducing the diffusion of the reaction gas toward the side wall of the reaction chamber, thereby improving the utilization rate of the reaction gas; at the same time, the uniformity of the thin film generated on the substrate is improved. In addition, the reaction gas is confined in the reaction zone by the purge gas, reducing the diffusion of the reaction gas to the side wall of the reaction chamber, reducing the formation of a coating on the side wall of the reaction chamber, and extending the maintenance period of the reaction chamber.

[0078] In this embodiment, the purge gas is argon or hydrogen, preferably a gas that does not affect the film-forming reaction of the reaction gas.

[0079] Please continue to refer to Figure 1 and Figure 8 As shown, the first central air inlet channel 701 and the first edge air inlet channel 702 respectively penetrate the top of the air inlet cover 100 and communicate with the corresponding external gas sources of the reaction gas.

[0080] In this embodiment, the second central air inlet channel 711 and the second edge air inlet channel 710 respectively penetrate the side walls of the air inlet cover 100 and communicate with the corresponding external gas sources of the reaction gas.

[0081] In this embodiment, the third edge air inlet channels 720 respectively penetrate the air inlet cover 100 and communicate with the corresponding external gas source of the purge gas.

[0082] Please continue to refer to Figure 1 As shown, this embodiment further includes: a first gas uniforming plate 600, which is arranged in the upper accommodating space and parallel to the gas separation plate 200, and is used to adjust the gas flow distribution of the reaction gas and the purge gas in the upper accommodating space.

[0083] like Figure 3 and Figure 4 As shown, the first gas homogenizing plate 600 is roughly circular, and a plurality of first gas homogenizing holes 6001 are spaced apart on the first gas homogenizing plate 600. By changing the aperture size or density of the first gas homogenizing holes 6001 at different positions, the concentration uniformity of the reaction gas and the purge gas in the upper accommodating space can be changed.

[0084] Please continue to refer to Figure 1 As shown, in this embodiment, the first partition ring group includes: a first partition ring 300 and a second partition ring 301; the first partition ring 300 is arranged between the first air uniforming plate 600 and the air intake top cover 100; the top of the first partition ring 300 is sealed and connected to the air intake top cover 100, and the bottom of the first partition ring 300 is sealed and connected to the first air uniforming plate 600.

[0085] The second partition ring 301 is disposed between the first gas equalizing plate 600 and the gas partition plate 200 , the top of the second partition ring 301 is sealedly connected to the first gas equalizing plate 600 , and the bottom of the second partition ring 301 is sealedly connected to the gas partition plate 200 .

[0086] The first partition ring 300 and the second partition ring 301 cooperate to divide the upper accommodating space into the upper central area space 1001 and the upper edge area space.

[0087] The annular central area of ​​the first partition ring 300 and the annular central area of ​​the second partition ring 301 together constitute the upper central area space 1001 .

[0088] The peripheral area separated by the first partition ring 300 and the second partition ring 301 together constitute the upper edge area space.

[0089] like Figure 2 As shown, in this embodiment, the first partition ring 300 and the second partition ring 301 are in a circular ring shape, and the diameters of the first partition ring 300 and the second partition ring 301 can be the same, and the two are arranged opposite to each other. The diameters of the first partition ring 300 and the second partition ring 301 can be adjusted to change the size of the upper central area space 1001 and the first upper edge area space 1002. If the diameters of the first partition ring 300 and the second partition ring 301 become smaller, the upper central area space 1001 becomes smaller; and the first upper edge area space 1002 becomes larger. If the diameters of the first partition ring 300 and the second partition ring 301 become larger, the upper central area space 1001 becomes larger; and the first upper edge area space 1002 becomes smaller.

[0090] Please continue to refer to Figure 1 As shown, in this embodiment, it also includes: a second gas uniforming plate 601, which is arranged in the lower accommodating space and parallel to the gas separation plate 200, and is used to adjust the gas flow distribution of the reaction gas and the purge gas in the lower accommodating space.

[0091] like Figure 6 As shown, a plurality of second gas-uniform holes 6010 are spaced apart on the second gas-uniform plate 601. By changing the aperture size or density of the second gas-uniform holes 6010 at different positions, the concentration uniformity of the reaction gas in the upper accommodating space can be changed.

[0092] Please continue to refer to Figure 1 As shown, the second partition ring group includes: a third partition ring 302 and a fourth partition ring 303, the third partition ring 302 is arranged between the second gas equalizing plate 601 and the gas partition plate 200; the top of the third partition ring 302 is sealed and connected to the gas partition plate 200, and the bottom of the third partition ring 302 is sealed and connected to the second gas equalizing plate 601.

[0093] The fourth partition ring 303 is disposed between the second air-distributing plate 601 and the water-cooling plate 400, the top of the fourth partition ring 303 is sealedly connected to the second air-distributing plate 601, and the bottom of the fourth partition ring 303 is sealedly connected to the water-cooling plate 400, and is used to divide the lower accommodation space into the lower central area space 1003 and the lower edge area space.

[0094] The third partition ring 302 and the fourth partition ring 303 cooperate to divide the lower accommodating space into the lower central area space 1003 and the lower edge area space.

[0095] Please continue to refer to Figure 2 As shown, the third partition ring 302 and the fourth partition ring 303 are in a circular shape, and the annular central area of ​​the third partition ring 302 and the annular central area of ​​the fourth partition ring 303 together constitute the lower central area space 1003.

[0096] The peripheral areas separated by the third partition ring 302 and the fourth partition ring 303 together constitute the lower edge area space.

[0097] In this embodiment, the diameters of the third partition ring 302 and the fourth partition ring 303 can be the same, and the two are arranged opposite to each other. The diameters of the third partition ring 302 and the fourth partition ring 303 can be adjusted to change the size of the lower central area space 1003 and the lower edge area space. If the diameters of the third partition ring 302 and the fourth partition ring 303 are reduced, the lower central area space 1003 will be reduced; the lower edge area space will be enlarged. If the diameters of the third partition ring 302 and the fourth partition ring 303 are increased, the lower central area space 1003 will be enlarged; the lower edge area space will be reduced.

[0098] Please continue to refer to Figure 1 and Figure 2 As shown, the third partition ring group includes: a fifth partition ring 304 to an eighth partition ring 307.

[0099] The fifth partition ring 304 is disposed around the first partition ring 300 and is located on the first air uniforming plate 600 .

[0100] The sixth partition ring 305 is disposed around the second partition ring 301 and is located between the first gas uniformizing plate 600 and the gas dividing plate 200. The fifth partition ring 304 and the sixth partition ring 305 are used to divide the upper edge region space into the first upper edge region space 1002 and the second upper edge region space 1005, which are independent.

[0101] The seventh partition ring 306 is disposed around the third partition ring 302 and is located between the gas partition plate 200 and the second gas uniformizing plate 601 .

[0102] The eighth partition ring 307 is disposed around the fourth partition ring 303 and is located between the second air distribution plate 601 and the water cooling plate 400. The seventh partition ring 306 and the eighth partition ring 307 are used to divide the lower edge area space into the first lower edge area space 1004 and the second lower edge area space 1006, which are independent.

[0103] like Figure 5 As shown, the gas separator 200 is provided with a first central gas outlet 201, a first edge gas outlet 202 and a first edge purge gas outlet 203. The purge gas in the second upper edge region space 1005 flows into the second lower edge region space 1006 through the first edge purge gas outlet 203.

[0104] Please continue to refer to Figure 6 As shown, the second air uniforming plate 601 is further provided with a second central air outlet hole 6011 corresponding to the first central air outlet hole 201 one-to-one; and a second edge air outlet hole 6012 corresponding to the first edge air outlet hole 202 one-to-one.

[0105] like Figure 7 As shown, the water cooling plate 400 includes a plurality of third central air outlet holes 401 , a plurality of third edge air outlet holes 402 , and a plurality of fourth edge air outlet holes 403 .

[0106] In this embodiment, a plurality of third central air outlet holes 401 are distributed in the area surrounded by the fourth partition ring 303 .

[0107] A plurality of third edge air outlet holes 402 are distributed in the area between the fourth partition ring 303 and the eighth partition ring 307 .

[0108] A plurality of fourth edge air outlet holes 403 are distributed in the outer area of ​​the eighth partition ring 307 .

[0109] Among them, some of the third central air outlet holes 401 corresponding to the second central air outlet hole 6011 are used as outlets for the reaction gas in the upper central area space, and the others are used as outlets for the reaction gas in the lower central area space 1003 .

[0110] The third edge air outlet holes 402 corresponding to the second edge air outlet holes 6012 are used as outlets for the reaction gas in the first upper edge area space 1002 , and the others are used as outlets for the reaction gas in the first lower edge area space 1004 .

[0111] The plurality of fourth edge air outlet holes 403 are used as outlets for the purge gas in the second lower edge region space 1006 .

[0112] The water cooling plate 400 is hollow inside and has a cooling medium 410 introduced therein for cooling the reaction gas and the purge gas in the vicinity thereof.

[0113] This embodiment provides a water cooling structure (water cooling plate, temperature suppression zone) at the gas outlet, further maintaining the interior of the temperature suppression zone at a relatively low temperature (e.g., below 400 degrees), thereby avoiding the generation of reaction by-products and extending the maintenance period of the gas supply device.

[0114] Please continue to refer to Figure 1 , Figures 4 to 7 As shown, this embodiment also includes: a plurality of first air ducts 610, each of the first air ducts 610 is connected to the corresponding first central air outlet hole 201, the second central air outlet hole 6011 and the third central air outlet hole 401 constitute the first central air outlet channel 800; the reaction gas in the upper central area space 1001 is passed into the reaction chamber from the first central air outlet channel 800.

[0115] A plurality of second air guide tubes 611 are provided, each of which is connected to the corresponding first edge air outlet hole 202. The second edge air outlet hole 6012 and the third edge air outlet hole 402 constitute the first edge air outlet channel 801. The reaction gas in the upper edge region space 1002 is introduced into the reaction chamber from the first edge air outlet channel 801.

[0116] Please continue to refer to Figure 1 As shown, this embodiment further includes: a protection plate 900, which is arranged on the top of the base 101 and is located below the water-cooled plate 400. The setting of the protection plate 900 can protect the water-cooled plate 400 and prevent the generated reaction byproducts from adhering to the water-cooled plate 400. After the protection plate 900 is contaminated, it can be disassembled and cleaned for recycling, thereby reducing equipment costs.

[0117] The protection plate 900 is provided with a plurality of fourth central air outlet holes, a plurality of fifth edge air outlet holes and a plurality of sixth edge air outlet holes, wherein the fourth central air outlet hole connected to the first air guide pipe 610 serves as the air outlet of the first central air outlet channel 800; the fifth edge air outlet hole connected to the second air guide pipe 611 serves as the air outlet of the first edge air outlet channel 801. The sixth edge air outlet holes correspond to the fourth edge air outlet holes 403 one by one, and each of the sixth edge air outlet holes is used as the air outlet of the purge gas in the second lower edge region space 1006.

[0118] Please continue to refer to Figure 3As shown, in this embodiment, the base 101 includes a bearing portion 1011 and a supporting portion 1010; the bearing portion 1011 is located at the top of the base 101, the top of the supporting portion 1010 is connected to the bearing portion 1011, and the bottom of the supporting portion 1010 is connected to the top of the reaction chamber; the interior of the supporting portion 1010 is hollow to form a temperature suppression zone 110.

[0119] The bearing portion 1011 is annular and is provided with an extension portion extending radially toward the center; the air intake cover 100, the water cooling plate 400 and the protection plate 900 are sequentially mounted on the extension portion.

[0120] The diameter of the support portion 1010 gradually increases in a direction away from the bearing portion 1011. Preferably, in this embodiment, the support portion 1010 is in a truncated cone shape as a whole.

[0121] Please continue to refer to Figure 1 As shown, this embodiment further includes: a protection ring 120 , which surrounds and is disposed close to the inner wall of the support portion 1010 .

[0122] Please continue to refer to Figure 1 As shown, this embodiment further includes: an air guide ring 500, which is mounted on the extension portion of the base 101, and the air guide ring 500 is located between the air intake cover 100 and the extension portion.

[0123] Please continue to refer to Figure 6 As shown, the second central air inlet channel 711 sequentially penetrates the side walls of the third partition ring 302 and the seventh partition ring 306 , and the side walls of the air guide ring 500 and the air inlet top cover 100 are connected to the external gas source of the corresponding reaction gas.

[0124] Preferably, the air guide ring 500 is provided with two opposite first radial extension portions 7110, and the first radial extension portions 7110 can constitute a part of the second central air inlet channel 711, which can not only simplify the air inlet pipeline but also facilitate the connection between the second lower edge area space 1006 and the first lower edge area space 1004 and the lower central area space 1003, so as to pass one of a plurality of raw gas into the lower central area space 1003, thereby achieving the purpose of independent regional gas supply.

[0125] The second edge air inlet passage 710 sequentially penetrates the seventh partition ring 306 , and the side wall of the air guide ring 500 and the air inlet top cover 100 are in communication with the corresponding external gas source of the reaction gas.

[0126] Preferably, the air guide ring 500 is provided with two opposite second radial extension portions 7100, and the second radial extension portions 7100 can constitute a part of the second edge air inlet 710, which can not only simplify the air inlet pipeline but also facilitate the connection between the second lower edge area space 1006 and the first lower edge area space 1004, so as to pass one of a plurality of raw material gases into the first lower edge area space 1004, thereby achieving the purpose of independent regional gas supply.

[0127] Preferably, the inner side wall of the gas guide ring 500 and the fifth partition ring 304, the sixth partition ring 305, the seventh partition ring 306 and the eighth partition ring 307 jointly define an edge purge zone (a space jointly defined by the second upper edge region space 1005 and the second lower edge region space 1006), and the edge purge zone is not connected to other region spaces (1001-1004). In the process of passing the purge gas to the reaction chamber through the edge purge zone, the purge gas surrounds the reaction gas, reducing the diffusion amount of the reaction gas toward the side wall of the reaction chamber, improving the utilization rate of the reaction gas; at the same time, improving the uniformity of the film generated on the substrate.

[0128] In this embodiment, the gas guide ring 500 is provided to provide the reaction gas (raw gas) and the purge gas in the reaction chamber in an independent partitioning manner while simplifying the air inlet pipeline, thereby avoiding the raw gas from pre-reacting in or outside the gas supply device. The purge gas is introduced into the chamber formed by the third partition ring group and the inner wall of the reaction chamber. The purge gas surrounds the reaction gas on the side of the reaction gas, reduces the diffusion of the reaction gas toward the side wall of the reaction chamber, and improves the utilization rate of the reaction gas; at the same time, it improves the uniformity of the thin film generated on the substrate. In addition, the reaction gas is confined in the reaction zone by the purge gas, reduces the diffusion of the reaction gas to the side wall of the reaction chamber, reduces the formation of a coating on the side wall of the reaction chamber, and extends the maintenance period of the reaction chamber.

[0129] It can be understood that, in some other embodiments, the air guide ring 500 and the air intake cover 100 are integrated.

[0130] In this embodiment, please continue to refer to Figure 4 As shown, the gas supply device may further include an infrared temperature measurement channel 130, the cross section of which is in the shape of an elongated strip, and the infrared temperature measurement channel 130 sequentially passes through the air intake top cover 100, the first air-distributing plate 600, the gas separation plate 200, the second air-distributing plate 601, the water-cooling plate 400 and the protection plate 900, and is connected to the interior of the reaction chamber. The infrared temperature measurement channel 130 is used to perform infrared temperature measurement in the reaction chamber.

[0131] Since infrared light needs to pass through when measuring temperature, the infrared temperature measurement channel 130 is sealed at the top port on the air intake cover 100 using structures such as light-transmitting quartz material, sealing ring screws, etc.

[0132] On the other hand, Figure 1 and Figure 8 As shown, this embodiment further provides a film forming device, including the gas supply device, the reaction chamber 910 and the susceptor 920 as described above. The susceptor 920 is arranged at the bottom of the reaction chamber 910, and is used to support and heat the substrate W. The gas supply device is arranged at the top of the reaction chamber 910, and is arranged opposite to the susceptor 920. The gas supply device is used to provide process gas required for film formation on the substrate W. In this embodiment, the film forming device can be a CVD (Chemical Vapor Deposition) device for preparing SiC film, the gas source includes a carbon source and a silicon source, the carbon source can include a central carbon source and an edge carbon source; the silicon source can include a central silicon source and an edge silicon source, the central carbon source is introduced into the upper central space area, and the central silicon source is introduced into the lower central space area; the edge carbon source is introduced into the first upper edge space area, and the edge silicon source is introduced into the first lower edge space area, thereby realizing independent gas intake of the carbon source and the silicon source, and they will not mix before entering the reaction chamber, thereby preventing the generation of particulate matter and affecting the quality of the SiC film.

[0133] And a purge gas is introduced into the second upper edge space area, and the purge gas forms an annular edge purge zone Z3, and the inner diameter of the edge purge zone Z3 is greater than or equal to the diameter of the substrate W. It can be understood that when the central silicon source and the central carbon source are respectively introduced into the reaction chamber through the upper / lower central space area, a first reaction gas transmission area Z1 is roughly formed, and when the edge silicon source and the edge carbon source are respectively introduced into the reaction chamber through the first upper / lower edge space area, a second reaction gas transmission area Z2 is roughly formed, wherein the outer diameter of the second reaction gas transmission area Z2 is greater than the outer diameter of the first reaction gas transmission area Z1. The inner diameter of the edge purge zone Z3 is greater than or equal to the outer diameter of the second reaction gas transmission area Z2. In this way, the reaction gas can be better surrounded, the diffusion of the reaction gas toward the side wall of the reaction chamber can be reduced, the utilization rate of the reaction gas can be improved, and the uniformity of the thin film generated on the substrate can be adjusted.

[0134] The above is just one of the air intake methods. In fact, the central carbon source can also be introduced into the lower central space area, and the central silicon source can be introduced into the upper central space area; the edge carbon source can be introduced into the first lower edge space area, and the edge silicon source can be introduced into the first upper edge space.

[0135] In addition, there may be other combinations for independent air intake, and the present invention is not limited thereto.

[0136] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0137] In the description of the present invention, it should be understood that the terms "center", "height", "thickness", "up", "down", "vertical", "horizontal", "top", "bottom", "inside", "outside", "axial", "radial", "circumferential" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In the description of the present invention, unless otherwise specified, "plurality" means two or more.

[0138] In the description of the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", and "fixed" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0139] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0140] Although the content of the present invention has been described in detail through the above preferred embodiments, it should be appreciated that the above description should not be considered as a limitation of the present invention. After reading the above content, it will be apparent to those skilled in the art that various modifications and substitutions of the present invention will occur. Therefore, the protection scope of the present invention should be limited by the appended claims.

Claims

1. A gas supply device for introducing a plurality of reaction gases into a reaction chamber of a film forming device, characterized in that: include: A base, which is arranged on the reaction chamber; An air intake cover, which is arranged on the top of the base; A water cooling plate is arranged between the bottom end of the air intake cover and the top end of the base; the air intake cover and the water cooling plate form an accommodating space, at least one gas separation plate, which is arranged on the air intake cover and located in the accommodating space, and is used to separate the accommodating space into an independent upper accommodating space and a lower accommodating space; A first partition ring group, which is arranged on the gas partition plate and is used to divide the upper accommodating space into an independent upper central area space and an upper edge area space; A second partition ring group, which is arranged on the water cooling plate and is used to divide the lower accommodating space into an independent lower central area space and a lower edge area space; A third partition ring group, wherein the partition rings in the third partition ring group located on the gas partition plate are arranged around the first partition ring group to divide the upper edge area space into an independent first upper edge area space and a second upper edge area space; The partition ring in the third partition ring group, which is located on the water cooling plate, is arranged around the second partition ring group and is used to separate the lower edge area space into an independent first lower edge area space and a second lower edge area space; The upper central area space is provided with a first central air inlet channel and a first central air outlet channel, wherein the first central air inlet channel is used to introduce any one of a plurality of reaction gases therein; the first central air outlet channel runs through the lower central area space and is connected to the reaction chamber, and is used to introduce the reaction gas in the upper central area space into the reaction chamber; The first upper edge region space is provided with a first edge inlet channel and a first edge outlet channel, wherein the first edge inlet channel is used to introduce any one of a plurality of reaction gases into the first edge inlet channel; the first edge outlet channel runs through the first lower edge region space and is connected to the reaction chamber, and is used to introduce the reaction gas in the first upper edge region space into the reaction chamber; The lower central area space is provided with a second central air inlet channel and a second central air outlet channel, wherein the second central air inlet channel is used to introduce any one of a plurality of reaction gases therein; the second central air outlet channel penetrates the water cooling plate and is connected to the reaction chamber, and is used to introduce the reaction gas in the lower central area space into the reaction chamber; The first lower edge region space is provided with a second edge inlet channel and a second edge outlet channel, wherein the second edge inlet channel is used to introduce any one of a plurality of reaction gases into the second edge inlet channel; the second edge outlet channel penetrates the water cooling plate and is connected to the reaction chamber, and is used to introduce the reaction gas in the lower edge region space into the reaction chamber; The second upper edge region space is provided with a third edge air inlet passage, and the third edge air inlet passage is used to introduce a purge gas therein; The second upper edge area space is communicated with the second lower edge area space. The second lower edge area space is provided with a third edge gas outlet channel, which passes through the water cooling plate and is communicated with the reaction chamber, and is used to pass the purge gas into the reaction chamber; the purge gas surrounds the reaction gas.

2. The gas supply device according to claim 1, characterized in that The first central air inlet channel and the first edge air inlet channel respectively penetrate the top of the air inlet cover and are connected to the corresponding external gas sources of the reaction gas.

3. The gas supply device according to claim 2, characterized in that: The second central air inlet channel and the second edge air inlet channel respectively penetrate the side walls of the air inlet cover and are in communication with corresponding external gas sources of the reaction gas.

4. The gas supply device according to claim 3, characterized in that: The third edge air inlet channels respectively penetrate the air inlet top covers and are in communication with corresponding external air sources of the purge gas.

5. The gas supply device according to claim 4, characterized in that: The gas separation plate is provided with a first central gas outlet hole and a first edge gas outlet hole.

6. The gas supply device according to claim 5, characterized in that Also includes: The first gas uniformizing plate is arranged in the upper accommodating space and parallel to the gas dividing plate, and is used for adjusting the gas flow distribution of the reaction gas and the purge gas in the upper accommodating space.

7. The gas supply device according to claim 6, characterized in that: The first partition ring group includes: a first partition ring and a second partition ring, and the first partition ring is arranged between the first air uniforming plate and the air intake top cover; The second partition ring is disposed between the first gas uniformizing plate and the gas dividing plate.

8. The gas supply device according to claim 7, characterized in that The first gas uniforming plate is provided with a plurality of first gas uniforming holes spaced apart from each other.

9. The gas supply device according to claim 8, characterized in that The second gas uniformizing plate is arranged in the lower accommodating space and parallel to the gas dividing plate, and is used for adjusting the gas flow distribution of the reaction gas and the purge gas in the lower accommodating space.

10. The gas supply device according to claim 9, characterized in that The second partition ring group includes: a third partition ring and a fourth partition ring, and the third partition ring is arranged between the second gas uniformizing plate and the gas partition plate; The fourth partition ring is arranged between the second air-distributing plate and the water-cooling plate; The third partition ring group includes: a fifth partition ring to an eighth partition ring, wherein the fifth partition ring is arranged around the first partition ring and is located on the first air-distributing plate; The sixth partition ring is arranged around the second partition ring and is located between the first gas uniformizing plate and the gas partition plate; The seventh partition ring is arranged around the third partition ring and is located between the gas partition plate and the second gas uniformizing plate; The eighth partition ring is arranged around the fourth partition ring and is located between the second air uniforming plate and the water cooling plate.

11. The gas supply device according to claim 9, characterized in that: The second gas-uniform plate is provided with a plurality of second gas-uniform holes spaced apart from each other; a second central air outlet hole corresponding one-to-one to the first central air outlet hole; and a second edge air outlet hole corresponding one-to-one to the first edge air outlet hole.

12. The gas supply device according to claim 11, characterized in that The water cooling plate includes a plurality of third central air outlet holes, a plurality of third edge air outlet holes and a plurality of fourth edge air outlet holes; Among them, the third central gas outlet holes corresponding to the second central gas outlet holes are used as gas outlets for the reaction gas in the upper central area space, and the others are used as gas outlets for the reaction gas in the lower central area space; The third edge gas outlet holes corresponding to the second edge gas outlet holes are used as gas outlets for the reaction gas in the first upper edge region space, and the others are used as gas outlets for the reaction gas in the first lower edge region space; The plurality of fourth edge air outlet holes are used as air outlets for the purge gas in the space of the second lower edge region.

13. The gas supply device according to claim 12, characterized in that: The water cooling plate is hollow inside and is filled with a cooling medium for cooling the reaction gas and the purge gas near the water cooling plate.

14. The gas supply device according to claim 13, characterized in that: Also includes: A plurality of first air guide tubes, each of which is connected to the corresponding first central air outlet hole, and the second central air outlet hole and the third central air outlet hole constitute the first central air outlet channel; A plurality of second air ducts, each of which is connected to the corresponding first edge air outlet hole, and the second edge air outlet hole and the third edge air outlet hole constitute the first edge air outlet channel.

15. The gas supply device according to claim 14, characterized in that Also includes: A protection plate is arranged on the top of the base and below the water cooling plate.

16. The gas supply device according to claim 15, characterized in that The protection plate is provided with a plurality of fourth central air outlet holes and a plurality of fifth edge air outlet holes, wherein the air outlet connected to the first air duct serves as the air outlet of the first central air outlet channel; and the air outlet connected to the second air duct serves as the air outlet of the first edge air outlet channel.

17. The gas supply device according to claim 16, characterized in that: The base includes a bearing part and a supporting part; the bearing part is located at the top of the base, the top of the supporting part is connected to the bearing part, and the bottom of the supporting part is connected to the top of the reaction chamber; the interior of the supporting part is hollow to form a temperature suppression zone.

18. The gas supply device according to claim 17, characterized in that: The bearing portion is annular and is provided with an extension portion, which extends radially toward the center; the air intake top cover, the water cooling plate and the protection plate are sequentially mounted on the extension portion.

19. The gas supply device according to claim 18, characterized in that The diameter of the support portion gradually increases in a direction away from the bearing portion.

20. The gas supply device according to claim 19, characterized in that The supporting part is in a truncated cone shape as a whole.

21. The gas supply device according to claim 20, characterized in that Also includes: A protection ring surrounds and is disposed close to the inner side wall of the support portion.

22. The gas supply device according to claim 21, characterized in that Also includes: an air guide ring mounted on the extension portion of the base, the air guide ring being located between the air intake cover and the extension portion; the second central air intake channel sequentially penetrates the side walls of the third partition ring and the seventh partition ring, the air guide ring body and the air intake cover being connected to an external gas source of the corresponding reaction gas; The second edge air inlet channel sequentially passes through the seventh partition ring, and the air guide ring body and the air inlet top cover are in communication with an external gas source of the corresponding reaction gas.

23. The gas supply device according to claim 21, characterized in that The air guide ring and the air intake cover are integrally arranged.

24. The gas supply device according to claim 1, characterized in that The purge gas is argon or hydrogen.

25. A film forming device, characterized in that: The invention comprises a gas supply device as claimed in any one of claims 1 to 24, wherein the gas supply device is used to provide process gas required for film formation on a substrate.

26. The film forming device according to claim 25, characterized in that: The purge gas provided by the gas supply device forms an annular edge purge zone, and the inner diameter of the edge purge zone is greater than or equal to the diameter of the substrate.

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